TW201901701A - Method for producing transparent conductive substrate, transparent conductive substrate - Google Patents

Method for producing transparent conductive substrate, transparent conductive substrate Download PDF

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TW201901701A
TW201901701A TW107117064A TW107117064A TW201901701A TW 201901701 A TW201901701 A TW 201901701A TW 107117064 A TW107117064 A TW 107117064A TW 107117064 A TW107117064 A TW 107117064A TW 201901701 A TW201901701 A TW 201901701A
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layer
blackened
conductive
substrate
transparent
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TWI785046B (en
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下地匠
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日商住友金屬礦山股份有限公司
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties

Abstract

Provided is a method for manufacturing a transparent electroconductive substrate having a patterning process for patterning a laminate which is a constituent of a laminated substrate that includes a transparent substrate and the laminate arranged on at least one side of the transparent substrate and consisting of a first blackening layer containing nickel and copper and an electroconductive layer containing copper that are laminated in the order stated from the transparent substrate side, the patterning process having an electroconductive layer etching step for etching the electroconductive layer with a first etchant with which copper can be dissolved, and a first blackening layer etching step for etching the first blackening layer with a second etchant containing chloride icons and water, the chloride ion concentration of the second etchant being 10 mass% or more in terms of hydrochloric acid.

Description

透明導電性基板之製造方法、透明導電性基板    Manufacturing method of transparent conductive substrate, transparent conductive substrate   

本發明涉及透明導電性基板的製造方法、透明導電性基板。 The present invention relates to a method for manufacturing a transparent conductive substrate and a transparent conductive substrate.

靜電容量式觸控面版(touch panel)藉由對接近面板表面的物體所引起的靜電容量的變化進行檢測,將面板表面上的接近物體的位置資訊變換為電氣信號。就靜電容量式觸控面版中使用的透明導電性基板而言,其設置在顯示器的表面上,故透明導電性基板的配線材料需要反射率較低,且難以被視認。 The electrostatic capacity type touch panel detects the change in electrostatic capacity caused by an object close to the surface of the panel, and converts the position information of the close object on the surface of the panel into an electrical signal. The transparent conductive substrate used in the capacitive touch panel is disposed on the surface of the display. Therefore, the wiring material of the transparent conductive substrate needs to have low reflectance and is difficult to be recognized.

為此,作為靜電容量式觸控面版中使用的配線材料,使用了反射率較低且難以被視認的材料,並在透明基板或透明膜上形成了配線。例如,專利文獻1公開了一種在高分子膜上作為透明導電膜形成了ITO(氧化銦-錫)膜的觸控面版用透明導電性膜。 For this reason, as a wiring material used in the capacitive touch panel, a material having a low reflectance and hard to be seen is used, and wiring is formed on a transparent substrate or a transparent film. For example, Patent Document 1 discloses a transparent conductive film for a touch panel in which an ITO (indium oxide-tin) film is formed as a transparent conductive film on a polymer film.

另外,近年來具有觸控面版的顯示器正趨於大畫面化,與此相應地,也正在要求觸控面版用透明導電性膜等的導電性基板的大面積化。然而,若ITO的電阻值較高且配線長度較長,則信號會發生惡化(劣化),故存在不適於大型面板的問題。 In addition, in recent years, a display having a touch panel is becoming larger, and accordingly, a large area of a conductive substrate such as a transparent conductive film for a touch panel is also required. However, if the resistance value of ITO is high and the wiring length is long, the signal will be degraded (degraded), so there is a problem that it is not suitable for a large panel.

為此,例如,如專利文獻2、3所述,研究了使用銅等的金屬配線來取代ITO。然而,作為金屬配線的材料的金屬具有金屬光澤,故存在反射會引起顯示器的視認性下降的問題。 For this reason, for example, as described in Patent Documents 2 and 3, it has been studied to use metal wiring such as copper instead of ITO. However, since metal, which is a material of the metal wiring, has a metallic luster, there is a problem in that reflection causes a decrease in visibility of the display.

故,研究了如下一種透明導電性基板,即,在透明基材上的使用了金屬材料的導電層上,形成對導電層表面的光反射進行抑制的黑化層之後,再對導電層和黑化層進行圖案化,從而作為一種在金屬配線的表面上形成了黑化層的透明導電性基板。 Therefore, a transparent conductive substrate has been studied in which a blackened layer that suppresses light reflection on the surface of a conductive layer is formed on a conductive layer using a metal material on a transparent substrate, and then the conductive layer and the black The patterned layer is patterned to be a transparent conductive substrate in which a blackened layer is formed on a surface of a metal wiring.

〔先前技術文獻〕     [Previous Technical Literature]     〔專利文獻〕     [Patent Literature]    

〔專利文獻1〕日本特開2003-151358號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2003-151358

〔專利文獻2〕日本特開2011-018194號公報 [Patent Document 2] Japanese Patent Application Laid-Open No. 2011-018194

〔專利文獻3〕日本特開2013-069261號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2013-069261

本發明的發明人對一種作為尤其可抑制使用了金屬材料的導電層表面的光反射的透明導電性基板的、包括含有鎳和銅的黑化層的透明導電性基板進行了研究。具體而言,對一種配置有從透明基材側開始依次積層了含有鎳和銅的第1黑化層、使用了含有銅的金屬材料的層即導電層、及含有鎳和銅的第2黑化層的積層體的透明導電性基板進行了研究。 The inventors of the present invention have studied a transparent conductive substrate including a blackened layer containing nickel and copper as a transparent conductive substrate capable of suppressing light reflection on the surface of a conductive layer using a metal material, in particular. Specifically, a first blackened layer containing nickel and copper, a conductive layer which is a layer using a metal material containing copper, and a second blackened layer containing nickel and copper are arranged in this order from the transparent substrate side. A multilayer conductive transparent conductive substrate was studied.

此外,為了對在透明基材上配置有包含黑化層和導電層的積層體的積層體基板進行圖案化,從而製造具有配線圖案的透明導電性基板,首先在積層體的表面上配置阻劑(resist),該阻劑具有與藉由蝕刻而欲除去的部分相對應的形狀的開口部。然後,對同時可蝕刻黑化層和導電層的蝕刻液進行供給,由此對包含黑化層和導電層的積層體進行蝕刻。之後,對阻劑進行剝離和除去,據此製造了具有配線圖案的透明導電性基板。如上所述,以往,從生產性的觀點來看,藉由同一種蝕刻液對黑化層和導電層進行了蝕刻。 In addition, in order to pattern a multilayer substrate on which a multilayer body including a blackened layer and a conductive layer is arranged on a transparent substrate, thereby manufacturing a transparent conductive substrate having a wiring pattern, a resist is first disposed on the surface of the multilayer body. (resist) The resist has an opening having a shape corresponding to a portion to be removed by etching. Then, an etching solution that can simultaneously etch the blackened layer and the conductive layer is supplied, whereby the laminated body including the blackened layer and the conductive layer is etched. Thereafter, the resist was peeled and removed, and a transparent conductive substrate having a wiring pattern was manufactured based thereon. As described above, conventionally, from the viewpoint of productivity, the blackened layer and the conductive layer have been etched with the same etching solution.

然而,在黑化層和導電層被一種蝕刻液蝕刻的情況下,對與透明基材相接的黑化層,如果是上述構成時,則對第1黑化層進行蝕刻後,一部分會發生溶解殘留,存在容易產生殘渣的問題。 However, when the blackening layer and the conductive layer are etched by an etching solution, if the blackening layer connected to the transparent substrate has the above-mentioned structure, the first blackening layer is etched, and a part of it occurs There is a problem that residues are easily caused by dissolution.

特別是近年來在顯示器上安裝(搭載)透明導電性基板的情況下,為了使配線圖案更不顯眼,需要一種可進一步抑制導電層表面的反射率的黑化層。 In particular, in the case where a transparent conductive substrate is mounted (mounted) on a display in recent years, in order to make the wiring pattern inconspicuous, a blackened layer capable of further suppressing the reflectance of the surface of the conductive layer is required.

此外,在含有鎳和銅的黑化層的情況下,藉由提高鎳氧化物的含有比例,可進一步抑制導電層表面的反射率。然而,就鎳氧化物而言,其對於可同時蝕刻黑化層和導電層的蝕刻液、例如、氯化鐵等的蝕刻液的反應性較低,故抑制反射率會導致更容易產生黑化層的殘渣,無法將黑化層圖案化為期望形狀。 In addition, in the case of a blackened layer containing nickel and copper, the reflectance of the surface of the conductive layer can be further suppressed by increasing the content ratio of nickel oxide. However, nickel oxide has low reactivity to an etchant that can simultaneously etch a blackened layer and a conductive layer, for example, an etchant such as ferric chloride, so suppressing the reflectance will cause blackening more easily. The residue of the layer cannot pattern the blackened layer into a desired shape.

鑑於上述先前技術的問題,於本發明的一態樣,以提供一種可將黑化層圖案化為期望形狀的透明導電性基板的製造方法為目的。 In view of the foregoing problems of the prior art, it is an object of the present invention to provide a method for manufacturing a transparent conductive substrate capable of patterning a blackened layer into a desired shape.

為了解決上述課題,於本發明的一態樣,提供一種透明導電性基板的製造方法,具有圖案化步驟,該圖案化步驟對積層體基板的積層體進行圖案化,該積層體基板包含透明基材及該積層體,該積層體配置在上述透明基材的至少一個表面上且從上述透明基材側開始依次積層有含有鎳和銅第1黑化層、及含有銅的導電層,上述圖案化步驟具有:藉由可溶解銅的第1蝕刻液對上述導電層進行蝕刻的導電層蝕刻階段;及藉由含有氯化物離子和水的第2蝕刻液對上述第1黑化層進行蝕刻的第1黑化層蝕刻階段,上述第2蝕刻液的氯化物離子濃度以鹽酸換算計為10質量%以上。 In order to solve the above-mentioned problem, in one aspect of the present invention, a method for manufacturing a transparent conductive substrate is provided, which includes a patterning step for patterning a multilayer body of a multilayer substrate, the multilayer substrate including a transparent base. A first blackened layer containing nickel and copper, and a conductive layer containing copper, which are arranged on at least one surface of the transparent substrate and are laminated on the transparent substrate in order from the transparent substrate The steps include: a conductive layer etching step for etching the conductive layer with a first copper-soluble etching solution; and a first etching layer for etching the first blackened layer with a second etching solution containing chloride ions and water. In the blackening layer etching step, the chloride ion concentration of the second etching solution is 10% by mass or more in terms of hydrochloric acid.

根據本發明的一態樣,能夠提供一種可將黑化層圖案化為期望形狀的透明導電性基板的製造方法。 According to one aspect of the present invention, a method for manufacturing a transparent conductive substrate capable of patterning a blackened layer into a desired shape can be provided.

10A、10B‧‧‧積層體基板 10A, 10B‧‧‧Multilayer substrate

11、11A、11B、91、101‧‧‧透明基材 11, 11A, 11B, 91, 101‧‧‧ transparent substrate

121、122‧‧‧積層體 121, 122‧‧‧Laminated bodies

121A、122A‧‧‧第1黑化層 121A, 122A‧‧‧The first blackened layer

121B、122B‧‧‧導電層 121B, 122B‧‧‧ conductive layer

122C‧‧‧第2黑化層 122C‧‧‧The second blackening layer

71‧‧‧金屬細線 71‧‧‧metal thin wire

22、33、43、51A、51B、711‧‧‧導電配線層 22, 33, 43, 51A, 51B, 711‧‧‧ conductive wiring layer

23、34、44、52A、52B、712、103‧‧‧第1黑化配線層 23, 34, 44, 52A, 52B, 712, 103‧‧‧ 1st blackened wiring layer

32、42、53A、53B、92、102‧‧‧第2黑化配線層 32, 42, 53A, 53B, 92, 102‧‧‧ 2nd blackened wiring layer

70‧‧‧透明導電性基板 70‧‧‧ transparent conductive substrate

L‧‧‧第1黑化配線層的伸出寬度 L‧‧‧ 1st Blackened Wiring Layer Projection Width

〔第1A圖〕積層體基板的說明圖。 [FIG. 1A] An explanatory diagram of a multilayer substrate.

〔第1B圖〕積層體基板的說明圖。 [FIG. 1B] An explanatory diagram of a multilayer substrate.

〔第2A圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 2A] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第2B圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 2B] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第2C圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 2C] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第2D圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 2D] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第3A圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 3A] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第3B圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 3B] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第3C圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 3C] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第3D圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 3D] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第3E圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 3E] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第4A圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 4A] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第4B圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 4B] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第4C圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 4C] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第4D圖〕本發明實施方式的透明導電性基板的製造方法的說明圖。 [FIG. 4D] An explanatory diagram of a method for manufacturing a transparent conductive substrate according to an embodiment of the present invention.

〔第5圖〕具有網格(mesh)狀配線的透明導電性基板的說明圖。 [FIG. 5] An explanatory diagram of a transparent conductive substrate having mesh-shaped wiring.

〔第6A圖〕沿圖5的A-A’線的斷面圖的構成例。 [Fig. 6A] A configuration example of a cross-sectional view taken along the line A-A 'in Fig. 5.

〔第6B圖〕沿圖5的A-A’線的斷面圖的構成例。 [Fig. 6B] A configuration example of a cross-sectional view taken along the line A-A 'in Fig. 5.

〔第7A圖〕本發明實施方式的透明導電性基板的說明圖。 [FIG. 7A] An explanatory diagram of a transparent conductive substrate according to an embodiment of the present invention.

〔第7B圖〕本發明實施方式的透明導電性基板的說明圖。 [FIG. 7B] An explanatory diagram of a transparent conductive substrate according to an embodiment of the present invention.

〔第8圖〕實驗例4-1中獲得的包含格子狀(lattice-like)的金屬細線的透明導電性基板的電子顯微鏡照片。 [FIG. 8] An electron microscope photograph of a transparent conductive substrate including a lattice-like thin metal wire obtained in Experimental Example 4-1.

〔第9圖〕實驗例7-1中獲得的透明導電性基板的導電配線層部分的電子顯微鏡照片。 [FIG. 9] An electron microscope photograph of a conductive wiring layer portion of a transparent conductive substrate obtained in Experimental Example 7-1.

〔第10圖〕實驗例7-6中獲得的透明導電性基板的導電配線層部分的電子顯微鏡照片。 [FIG. 10] An electron microscope photograph of a conductive wiring layer portion of the transparent conductive substrate obtained in Experimental Example 7-6.

以下,對本發明的透明基材的製造方法的一實施方式進行說明。 Hereinafter, one embodiment of the manufacturing method of the transparent base material of this invention is demonstrated.

本實施方式的透明導電性基板的製造方法可具有對積層體基板的積層體進行圖案化的圖案化步驟,該積層體基板包含透明基材和該積層體,該積層體配置在該透明基材的至少一個表面上且從透明基材側依次積層有含有鎳和銅的第1黑化層、及含有銅的導電層。 The method for manufacturing a transparent conductive substrate according to this embodiment may include a patterning step of patterning a laminated body of a laminated substrate including a transparent substrate and the laminated body, and the laminated body is disposed on the transparent substrate. On at least one surface, a first blackened layer containing nickel and copper and a conductive layer containing copper are laminated in this order from the transparent substrate side.

此外,圖案化步驟還可具有如下階段。 In addition, the patterning step may have the following stages.

藉由可溶解銅的第1蝕刻液對導電層進行蝕刻的導電層蝕刻階段。 A conductive layer etching step in which the conductive layer is etched by a first etchant capable of dissolving copper.

藉由含有氯化物離子和水的第2蝕刻液對第1黑化層進行蝕刻的第1黑化層蝕刻階段。 A first blackened layer etching step in which the first blackened layer is etched with a second etchant containing chloride ions and water.

第2蝕刻液的氯化物離子濃度以鹽酸換算計為10質量%以上。 The chloride ion concentration of the second etching solution is 10% by mass or more in terms of hydrochloric acid.

這裡,首先在下面對供本實施方式的透明導電性基板的製造方法使用的積層體基板中所含的各構件進行說明。 Here, first, each member contained in the laminated body substrate used for the manufacturing method of the transparent conductive substrate of this embodiment is demonstrated below.

作為透明基材對其並無特別限定,例如可優選使用能使可視光透過的樹脂基板(樹脂膜)、玻璃基板等。 The transparent base material is not particularly limited, and for example, a resin substrate (resin film) or a glass substrate that can transmit visible light can be preferably used.

作為能使可視光透過的樹脂基板的材料,例如優選可使用聚醯胺系樹脂、聚對酞酸乙二酯(PET)系樹脂、聚萘二甲酸乙二酯(PEN)系樹脂、環烯系樹脂、聚醯亞胺(PI)系樹脂、聚碳酸酯(PC)系樹脂等的樹脂。特別地,作為能使可視光透過的樹脂基板的材料,較佳可使用聚醯胺、PET(聚對酞酸乙二酯)、PEN(聚萘二甲酸乙二酯)、COP(環烯聚合物)、聚醯胺、聚碳酸酯等。 As the material of the resin substrate that can transmit visible light, for example, a polyamide resin, a polyethylene terephthalate (PET) resin, a polyethylene naphthalate (PEN) resin, or a cycloolefin can be preferably used Resins such as resins, polyimide (PI) resins, and polycarbonate (PC) resins. In particular, as the material of the resin substrate that can transmit visible light, polyamine, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and COP (cycloolefin polymerization) are preferably used. Materials), polyamide, polycarbonate, etc.

對透明基材的厚度並無特別限定,可根據作為透明導電性基板時所要求的強度、靜電容量、光透過率等進行任意選擇。作為透明基材的厚度,例如可為10μm以上且200μm以下。尤其在使用於觸控面版的用途的情況下,透明基材的厚度優選為20μm以上且120μm以下,較佳為20μm以上且100μm以下。在使用於觸控面版的用途的情況下,例如尤其在使用於需要使顯示器整體的厚度變薄的用途的情況下,透明基材的厚度優選為20μm以上且50μm以下。 The thickness of the transparent substrate is not particularly limited, and can be arbitrarily selected according to the strength, capacitance, light transmittance, and the like required as a transparent conductive substrate. The thickness of the transparent substrate may be, for example, 10 μm or more and 200 μm or less. Especially in the case of use for a touch panel, the thickness of the transparent substrate is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. In the case of use for a touch panel, for example, in the case where the thickness of the entire display needs to be reduced, the thickness of the transparent substrate is preferably 20 μm or more and 50 μm or less.

透明基材的全光線透過率較高為佳,例如全光線透過率優選為30%以上,較佳為60%以上。藉由使透明基材的全光線透過率位於上述範圍,例如在使用於觸控面版的用途的情況下,可充分確保顯示器的視認性。 The total light transmittance of the transparent substrate is preferably high. For example, the total light transmittance is preferably 30% or more, and more preferably 60% or more. By setting the total light transmittance of the transparent substrate to be in the above range, for example, when it is used for a touch panel, the visibility of the display can be sufficiently ensured.

需要說明的是,就透明基材的全光線透過率而言,可藉由JIS K 7361-1中規定的方法進行評價。 The total light transmittance of the transparent substrate can be evaluated by a method specified in JIS K 7361-1.

接下來,對積層體進行說明。 Next, a laminated body is demonstrated.

在本實施方式的透明導電性基板的製造方法中,藉由對具有「透明基材」及「配置在透明基材的至少一個表面上的積層體」的積層體基板的積層體進行圖案化(patterning),可製成具有期望配線圖案的透明導電性基 板。 In the method for manufacturing a transparent conductive substrate according to this embodiment, a laminate of a laminate substrate having a "transparent substrate" and a "laminate disposed on at least one surface of a transparent substrate" is patterned ( patterning) to form a transparent conductive substrate having a desired wiring pattern.

就積層體而言,如上所述,可具有從透明基材側開始對含有鎳和銅的第1黑化層、及含有銅的導電層從透明基材側開始依次進行了積層的結構。需要說明的是,如後所述,積層體也可在導電層的與第1黑化層相對的表面的相反側的表面上還具有含有鎳和銅的第2黑化層。 As described above, the laminated body may have a structure in which a first blackened layer containing nickel and copper and a conductive layer containing copper are laminated in this order from the transparent substrate side from the transparent substrate side. In addition, as described later, the laminated body may further include a second blackening layer containing nickel and copper on a surface of the conductive layer opposite to the surface opposite to the first blackening layer.

導電層只要含有銅(Cu)即可,對其他成分並無特別限定。可根據透明導電性基板所要求的電阻值等進行任意選擇。導電層例如優選為Cu和從Ni(鎳)、Mo(鉬)、Ta(鉭)、Ti(鈦)、V(釩)、Cr(鉻)、Fe(鐵)、Mn(錳)、Co(鈷)、及W(鎢)的元素群中選出的至少1種以上的元素的銅合金、或者為包含Cu和從上述元素群中選出的至少1種以上的元素的材料。此外,導電層也可製成由銅構成的銅層。 The conductive layer need only contain copper (Cu), and other components are not particularly limited. It can be arbitrarily selected according to the resistance value etc. required for a transparent conductive substrate. The conductive layer is preferably, for example, Cu and Ni (nickel), Mo (molybdenum), Ta (tantalum), Ti (titanium), V (vanadium), Cr (chromium), Fe (iron), Mn (manganese), Co ( Cobalt), and a copper alloy of at least one element selected from the element group of W (tungsten), or a material containing Cu and at least one element selected from the element group. Alternatively, the conductive layer may be made of a copper layer made of copper.

對在透明基材上形成導電層的方法並無特別限定,但為了不降低光的透過率,導電層和第1黑化層之間優選不配置接著劑。即,導電層優選直接形成在第1黑化層的上表面。 The method for forming the conductive layer on the transparent substrate is not particularly limited, but in order not to reduce the light transmittance, it is preferable that no adhesive is disposed between the conductive layer and the first blackened layer. That is, the conductive layer is preferably formed directly on the upper surface of the first blackened layer.

為了在第1黑化層的上表面上直接形成導電層,導電層優選具有導電薄膜層。此外,導電層也可具有導電薄膜層和導電鍍層。 In order to form a conductive layer directly on the upper surface of the first blackening layer, the conductive layer preferably has a conductive thin film layer. The conductive layer may include a conductive thin film layer and a conductive plating layer.

例如,可在第1黑化層上採用乾式鍍法形成導電薄膜層,並將該導電薄膜層作為導電層。據此,在第1黑化層上可不介隔接著劑而直接形成導電層。需要說明的是,作為乾式鍍法,例如優選可使用濺射法、蒸鍍法、離子鍍法等。 For example, a conductive thin film layer may be formed on the first blackened layer by a dry plating method, and the conductive thin film layer may be used as a conductive layer. Accordingly, the conductive layer can be formed directly on the first blackened layer without interposing an adhesive. In addition, as a dry plating method, it is preferable to use a sputtering method, a vapor deposition method, an ion plating method, etc., for example.

此外,在使導電層的膜厚增厚的情況下,也可將導電薄膜層作為供電層,並例如採用作為濕式鍍法的一種的電鍍法形成導電鍍層,由此成為具有導電薄膜層和導電鍍層的導電層。藉由導電層具有導電薄膜層和導電鍍層,此情況下也可在第1黑化層上不介隔接著劑而直接形成導電層。 In addition, when the film thickness of the conductive layer is increased, the conductive thin film layer may be used as a power supply layer, and the conductive plating layer may be formed by, for example, an electroplating method, which is a type of wet plating method. Conductive layer of conductive plating. Since the conductive layer has a conductive thin film layer and a conductive plating layer, in this case, the conductive layer can be directly formed without interposing an adhesive on the first blackened layer.

對導電層的厚度並無特別限定,在對導電層進行圖案化以作為配線來使用的情況下,可根據供給之該配線的電流的大小、配線的寬度等進行任意選擇。 The thickness of the conductive layer is not particularly limited. When the conductive layer is patterned for use as a wiring, it can be arbitrarily selected according to the magnitude of the current supplied to the wiring, the width of the wiring, and the like.

然而,如果導電層變厚,則為了進行積層體的圖案化而對導電層進行蝕刻時,蝕刻所需的時間較長,故容易發生側蝕(side etching),存在會出現難以形成細線等的問題的情況。為此,導電層的厚度優選為5μm以下,較佳為3μm以下。 However, if the conductive layer becomes thick, when the conductive layer is etched in order to pattern the laminated body, the time required for etching is long, so side etching is likely to occur, and there are cases where it is difficult to form thin lines. Problem situation. For this reason, the thickness of the conductive layer is preferably 5 μm or less, and more preferably 3 μm or less.

此外,尤其從降低透明導電性基板的電阻值,以可充分提供電流的觀點來看,例如,導電層的厚度優選為50nm以上,較佳為60nm以上,更佳為150nm以上。 In addition, in particular, from the viewpoint of reducing the resistance value of the transparent conductive substrate to sufficiently supply a current, for example, the thickness of the conductive layer is preferably 50 nm or more, preferably 60 nm or more, and more preferably 150 nm or more.

需要說明的是,在導電層如上所述具有導電薄膜層和導電鍍層的情況下,導電薄膜層的厚度和導電鍍層的厚度的合計優選位於上述範圍內。 In addition, when the conductive layer has the conductive thin film layer and the conductive plating layer as described above, the total of the thickness of the conductive thin film layer and the thickness of the conductive plating layer is preferably within the above range.

在導電層由導電薄膜層構成的情況、或由導電薄膜層和導電鍍層構成的情況的任一情況下,都對導電薄膜層的厚度並無特別限定,但例如優選為50nm以上且500nm以下。 The thickness of the conductive thin film layer is not particularly limited in the case where the conductive layer is formed of a conductive thin film layer or in the case of a conductive thin film layer and a conductive plating layer, but it is preferably 50 nm or more and 500 nm or less, for example.

就導電層而言,藉由圖案化為與期望配線圖案相對應的形狀,可製成配線即導電配線層。對導電配線層的圖案形狀並無特別限定,可製成與透明導電性基板所要求的配線圖案相對應的形狀。 As for the conductive layer, by patterning it into a shape corresponding to a desired wiring pattern, a conductive wiring layer, which is a wiring, can be formed. The pattern shape of the conductive wiring layer is not particularly limited, and it can be formed into a shape corresponding to a wiring pattern required for a transparent conductive substrate.

就導電配線層而言,例如,如上所述可藉由對導電層進行圖案化而形成。為此,在導電層由導電薄膜層構成的情況下,導電配線層可具有圖案化了的導電薄膜層。此外,在導電層具有導電薄膜層和導電鍍層的情況下,導電配線層也可具有圖案化了的導電薄膜層和圖案化了的導電鍍層。 The conductive wiring layer can be formed by patterning the conductive layer as described above, for example. For this reason, when the conductive layer is composed of a conductive thin film layer, the conductive wiring layer may have a patterned conductive thin film layer. In addition, when the conductive layer has a conductive thin film layer and a conductive plating layer, the conductive wiring layer may include a patterned conductive thin film layer and a patterned conductive plating layer.

就導電層而言,與作為透明導電性基板的導電層的材料而使用的先前的ITO相比,可降低電阻值,故藉由設置對導電層進行圖案化而成的配 線,可減小透明導電性基板的電阻值。 The conductive layer can reduce the resistance compared to the conventional ITO used as the material of the conductive layer of the transparent conductive substrate. Therefore, by providing wiring patterned with the conductive layer, the transparency can be reduced Resistance value of a conductive substrate.

接下來,對第1黑化層進行說明。 Next, the first blackening layer will be described.

當在透明基材上直接形成導電層和/或導電配線層時,存在透明基材與導電層和/或導電配線層之間的密接性不足的情況。為此,在透明基材的上表面上直接配置導電層和/或導電配線層的情況下,製造過程中或使用時存在導電層和/或導電配線層會從透明基材剝離的情況。此外,還存在需要對從透明基材側入射的光的、導電層和/或導電配線層表面的光反射進行抑制的情況。 When a conductive layer and / or a conductive wiring layer are directly formed on a transparent substrate, there may be cases where the adhesion between the transparent substrate and the conductive layer and / or the conductive wiring layer is insufficient. For this reason, when a conductive layer and / or a conductive wiring layer are directly disposed on the upper surface of a transparent substrate, the conductive layer and / or the conductive wiring layer may be peeled from the transparent substrate during manufacturing or during use. In addition, there is a case where it is necessary to suppress light reflection from the surface of the conductive layer and / or the conductive wiring layer of light incident from the transparent substrate side.

故,就本實施方式的透明導電性基板的製造方法中使用的積層體基板而言,為了提高透明基材和導電層之間的密接性,並對從透明基材側入射的光的、導電層表面的反射進行抑制,導電層和透明基材之間可具有第1黑化層。 Therefore, in the multilayer substrate used in the method for manufacturing a transparent conductive substrate according to this embodiment, in order to improve the adhesion between the transparent substrate and the conductive layer, the light and the light incident from the transparent substrate side are conductive. Reflection on the surface of the layer is suppressed, and a first blackening layer may be provided between the conductive layer and the transparent substrate.

第1黑化層可含有鎳和銅,對其他成分並無特別限定,但如上所述為了抑制導電層表面的光反射,優選具有適於對這種光反射進行抑制的顏色。為此,第1黑化層優選含有鎳、銅、及鎳氧化物。此外,第1黑化層還可含有銅氧化物。就鎳氧化物和銅氧化物而言,例如,可如含有鎳和銅的金屬的氧化物那樣,作為複合金屬的氧化物而存在。 The first blackening layer may contain nickel and copper, and other components are not particularly limited. However, as described above, in order to suppress light reflection on the surface of the conductive layer, it is preferable to have a color suitable for suppressing such light reflection. Therefore, the first blackening layer preferably contains nickel, copper, and nickel oxide. The first blackened layer may further contain a copper oxide. The nickel oxide and the copper oxide may exist, for example, as an oxide of a composite metal, such as an oxide of a metal containing nickel and copper.

第1黑化層例如也可由上述的鎳、銅、鎳氧化物、及銅氧化物構成。此外,第1黑化層還可含有任意的成分。作為任意的成分,例如也可含有從鎳和銅中選出的1種以上的金屬的氫氧化物等。 The first blackening layer may be composed of, for example, the above-mentioned nickel, copper, nickel oxide, and copper oxide. In addition, the first blackening layer may contain an arbitrary component. As an arbitrary component, for example, a hydroxide of one or more metals selected from nickel and copper may be contained.

對第1黑化層的成膜方法並無特別限定,但優選採用乾式鍍法進行成膜。作為乾式鍍法,例如可優選使用濺射法、離子鍍法、蒸鍍法等。在第1黑化層採用乾式法進行成膜的情況下,從膜厚的控制較容易的觀點來看,使用濺射法更佳。需要說明的是,第1黑化層如上所述還可含有鎳氧化物等的氧 化物。為此,也可在對第1黑化層進行成膜時的環境中添加氧氣,此情況下,更優選使用反應性濺射法。 The method of forming the first blackened layer is not particularly limited, but it is preferable to form the film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. When the first blackening layer is formed by a dry method, it is more preferable to use a sputtering method from the viewpoint that it is easier to control the film thickness. In addition, as described above, the first blackening layer may further contain an oxide such as nickel oxide. Therefore, oxygen may be added to the environment when the first blackening layer is formed. In this case, it is more preferable to use a reactive sputtering method.

藉由預先在使第1黑化層成膜時的環境中添加氧氣,可將氧氣添加至第1黑化層中,以形成氧化物。 By adding oxygen in advance to the environment when the first blackening layer is formed, oxygen can be added to the first blackening layer to form an oxide.

當對第1黑化層進行成膜時,氧氣例如優選添加至非活性氣體,以作為乾式鍍時的環境。作為非活性氣體對其並無特別限定,但例如可優選使用氬氣。 When the first blackening layer is formed, oxygen is preferably added to an inert gas, for example, as an environment during dry plating. It is not particularly limited as the inert gas, but for example, argon gas can be preferably used.

藉由如上所述採用乾式鍍法對第1黑化層進行成膜,可提高透明基材和第1黑化層之間的密接性。另外,第1黑化層例如還可含有金屬作為主成分,故與導電層之間的密接性也較高。為此,藉由在透明基材和導電層之間配置第1黑化層,可抑制導電層和/或由該導電層所形成的導電配線層的剝離。 By forming the first blackened layer by the dry plating method as described above, the adhesion between the transparent substrate and the first blackened layer can be improved. In addition, since the first blackening layer may contain, for example, a metal as a main component, the first blackening layer has high adhesion to the conductive layer. For this reason, by disposing the first blackening layer between the transparent substrate and the conductive layer, peeling of the conductive layer and / or the conductive wiring layer formed by the conductive layer can be suppressed.

對第1黑化層的厚度並無特別限定,但例如優選為3nm以上且50nm以下,較佳為3nm以上且35nm以下,更佳為3nm以上且33nm以下。 The thickness of the first blackening layer is not particularly limited, but it is preferably, for example, 3 nm or more and 50 nm or less, preferably 3 nm or more and 35 nm or less, and more preferably 3 nm or more and 33 nm or less.

藉由使第1黑化層的厚度為3nm以上,尤其可抑制導電層的表面的光反射,故為優選。 When the thickness of the first blackening layer is 3 nm or more, light reflection on the surface of the conductive layer is particularly suppressed, which is preferable.

然而,如果第1黑化層過厚,則成膜所需的時間和/或第1黑化層圖案化時的蝕刻所需的時間變長,會導致成本的上昇。為此,第1黑化層的厚度如上所述優選為50nm以下,較佳為35nm以下,更佳為33nm以下。 However, if the first blackened layer is too thick, the time required for film formation and / or the time required for etching during patterning of the first blackened layer becomes longer, resulting in an increase in cost. Therefore, as described above, the thickness of the first blackening layer is preferably 50 nm or less, preferably 35 nm or less, and more preferably 33 nm or less.

接下來,對第2黑化層進行說明。 Next, the second blackening layer will be described.

就供本實施方式的透明導電性基板的製造方法使用的積層體基板所具有的積層體而言,在導電層的與第1黑化層相對的表面的相反側的表面上還可具有含有鎳和銅的第2黑化層。 The multilayer body included in the multilayer body substrate used in the method for manufacturing a transparent conductive substrate according to the present embodiment may further include nickel on the surface of the conductive layer opposite to the surface facing the first blackened layer. And the second blackening layer of copper.

藉由含有第2黑化層,可對導電層的沒有配置第1黑化層的表面的光反射進行抑制,為優選。 The inclusion of the second blackening layer is preferable because it is possible to suppress light reflection on the surface of the conductive layer on which the first blackening layer is not disposed.

第2黑化層可含有鎳和銅,對其他成分並無特別限定,但如上所述為了抑制導電層表面的光反射,優選具有適於對這種光反射進行抑制的顏色。為此,第2黑化層優選含有鎳、銅、及鎳氧化物。此外,第2黑化層還可含有銅氧化物。就鎳氧化物和銅氧化物而言,例如,可如含有鎳和銅的金屬的氧化物那樣,作為複合金屬的氧化物而存在。 The second blackening layer may contain nickel and copper, and is not particularly limited to other components. As described above, in order to suppress light reflection on the surface of the conductive layer, it is preferable to have a color suitable for suppressing such light reflection. Therefore, the second blackening layer preferably contains nickel, copper, and nickel oxide. The second blackening layer may further contain a copper oxide. The nickel oxide and the copper oxide may exist, for example, as an oxide of a composite metal, such as an oxide of a metal containing nickel and copper.

第2黑化層例如可由上述的鎳、銅、鎳氧化物、及銅氧化物構成。此外,第2黑化層還可含有任意的成分。作為任意的成分,例如也可含有從鎳和銅中選出的1種以上的金屬的氫氧化物等。 The second blackening layer may be made of, for example, the above-mentioned nickel, copper, nickel oxide, and copper oxide. In addition, the second blackening layer may contain an arbitrary component. As an arbitrary component, for example, a hydroxide of one or more metals selected from nickel and copper may be contained.

第1黑化層和第2黑化層可具有相同的組成,但也可具有不同的組成。如上所述,第1黑化層和第2黑化層都可含有鎳和銅。此外,第1黑化層和第2黑化層也都可再含有鎳氧化物、銅氧化物、從鎳和銅中選出的1種以上的氫氧化物等。為此,第1黑化層和第2黑化層可含有相同的成分,其含有比例可相同,也可不同。此外,第1黑化層和第2黑化層所含有的成分也可不同。 The first blackening layer and the second blackening layer may have the same composition, but may have different compositions. As described above, both the first blackening layer and the second blackening layer may contain nickel and copper. In addition, both the first blackening layer and the second blackening layer may further contain nickel oxide, copper oxide, one or more hydroxides selected from nickel and copper, and the like. Therefore, the first blackening layer and the second blackening layer may contain the same components, and the content ratios may be the same or different. The components contained in the first blackening layer and the second blackening layer may be different.

對第2黑化層的成膜方法並無特別限定,但只要為可形成含有鎳和銅的方法,可選擇任意的方法。然而,就第2黑化層而言,優選在導電層等的其他構件的上表面上不介隔接著劑而直接形成。 The method for forming the second blackening layer is not particularly limited, but any method may be selected as long as it can form a method containing nickel and copper. However, it is preferable that the second blackening layer is formed directly without interposing an adhesive on the upper surface of another member such as a conductive layer.

作為第2黑化層的成膜方法,例如可使用濕式鍍法和/或乾式鍍法。在濕式鍍法的情況下,例如可使用電鍍法,在乾式鍍法的情況下,例如可使用濺射法、離子鍍法、蒸鍍法等。在採用乾式鍍法的情況下,尤其從膜厚的控制較容易的觀點來看,使用濺射法較佳。 As a method for forming the second blackened layer, for example, a wet plating method and / or a dry plating method can be used. In the case of a wet plating method, for example, a plating method can be used, and in the case of a dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be used. When a dry plating method is used, it is preferable to use a sputtering method, especially from the viewpoint of easier control of the film thickness.

需要說明的是,第2黑化層如上所述也可含有鎳氧化物等的氧化物。為此,在藉由乾式鍍法對第2黑化層進行成膜的情況下,也可向成膜時的環境中添加氧氣,此情況下,可更優選使用反應性濺射法。 In addition, as mentioned above, the 2nd blackening layer may contain oxides, such as a nickel oxide. Therefore, when the second blackening layer is formed by a dry plating method, oxygen may be added to the environment at the time of film formation. In this case, a reactive sputtering method may be more preferably used.

藉由預先向採用乾式鍍法使第2黑化層成膜時的環境中添加氧 氣,可將氧氣添加至第2黑化層中,以形成氧化物。 By adding oxygen to the environment when the second blackening layer is formed by the dry plating method in advance, oxygen can be added to the second blackening layer to form an oxide.

對第2黑化層進行成膜時,氧氣例如優選添加至非活性氣體,以作為乾式鍍時的環境。作為非活性氣體對其並無特別限定,但例如可優選使用氬氣。 When the second blackening layer is formed, oxygen is preferably added to, for example, an inert gas as the environment during dry plating. It is not particularly limited as the inert gas, but for example, argon gas can be preferably used.

對第2黑化層的厚度並無特別限定,可根據透明導電性基板所要求的光反射的抑制程度等進行任意選擇。 The thickness of the second blackening layer is not particularly limited, and can be arbitrarily selected according to the degree of suppression of light reflection required by the transparent conductive substrate and the like.

第2黑化層的厚度例如優選為15nm以上,較佳為20nm以上。藉由使第2黑化層的厚度為15nm以上,可切實地抑制導電層表面的光反射,故為優選。 The thickness of the second blackening layer is, for example, preferably 15 nm or more, and more preferably 20 nm or more. When the thickness of the second blackening layer is 15 nm or more, light reflection on the surface of the conductive layer can be reliably suppressed, which is preferable.

此外,對第2黑化層的厚度的上限值並無特別限定,但如果過厚,則圖案化步驟中的蝕刻所需的時間變長,會招致成本的上昇。為此,第2黑化層的厚度優選為70nm以下,較佳為50nm以下。 In addition, the upper limit value of the thickness of the second blackening layer is not particularly limited, but if it is too thick, the time required for the etching in the patterning step becomes longer, which causes an increase in cost. Therefore, the thickness of the second blackening layer is preferably 70 nm or less, and more preferably 50 nm or less.

這裡,使用圖1A和圖1B對積層體基板的構成進行說明。圖1A和圖1B示出了與透明基材和積層體的積層方向平行的面的斷面模式圖。 Here, the structure of a laminated body substrate is demonstrated using FIG. 1A and FIG. 1B. 1A and 1B are schematic cross-sectional views of a plane parallel to the laminated direction of the transparent substrate and the laminated body.

如圖1A所示,積層體基板10A可具有透明基材11、及在透明基材11的一個表面11a上配置的積層體121。積層體121從透明基材11側開始依次具有第1黑化層121A和導電層121B。 As shown in FIG. 1A, the multilayer substrate 10A may include a transparent substrate 11 and a multilayer 121 arranged on one surface 11 a of the transparent substrate 11. The laminated body 121 includes a first blackened layer 121A and a conductive layer 121B in this order from the transparent substrate 11 side.

此外,如圖1B所示,積層體基板10B可具有透明基材11、及在透明基材11的一個表面11a上配置的積層體122。在圖1B所示的積層體基板10B的情況下,積層體122可具有第1黑化層122A、導電層122B、及第2黑化層122C從透明基材11側開始依次進行了積層的結構。 In addition, as shown in FIG. 1B, the multilayer substrate 10B may include a transparent base material 11 and a multilayer body 122 disposed on one surface 11 a of the transparent base material 11. In the case of the laminated body substrate 10B shown in FIG. 1B, the laminated body 122 may have a structure in which a first blackened layer 122A, a conductive layer 122B, and a second blackened layer 122C are laminated in order from the transparent substrate 11 side. .

需要說明的是,圖1A和圖1B中,作為積層體基板,示出了僅在透明基材11的一個表面11a上配置了積層體的例子,但並不限定於該形態,還可製成在透明基材11的另一個表面11b上也配置了積層體的積層體基板。在透明 基材11的另一個表面11b上也配置積層體的情況下,夾著透明基材11在上下而配置的積層體可被構成為對稱結構,也可被構成為不同的結構。例如,在圖1A所示的積層體基板10A中,也可在另一個表面11b上配置一與圖1B所示的積層體122同樣地從透明基材11側開始依次對第1黑化層122A、導電層122B、及第2黑化層122C進行了積層的結構的積層體。 In addition, in FIG. 1A and FIG. 1B, as a laminated body substrate, the example in which the laminated body was arrange | positioned only on the one surface 11a of the transparent base material 11 was shown, However, It is not limited to this form, It can also be made A multilayer substrate of the multilayer is also arranged on the other surface 11 b of the transparent substrate 11. When the laminated body is also arranged on the other surface 11b of the transparent base material 11, the laminated body arranged above and below the transparent base material 11 may be configured as a symmetrical structure or may be configured as a different structure. For example, in the laminated body substrate 10A shown in FIG. 1A, a first blackened layer 122A may be sequentially disposed on the other surface 11b from the transparent substrate 11 side in the same manner as the laminated body 122 shown in FIG. 1B. A laminated body having a structure in which the conductive layer 122B and the second blackening layer 122C are laminated.

接下來,使用圖對本實施方式的透明導電性基板的製造方法的各步驟、階段的構成例進行說明。需要說明的是,在隨附的圖式中,對相同構件賦予了相同符號,並對一部分說明進行了省略。 Next, a configuration example of each step and stage of the method for manufacturing a transparent conductive substrate according to this embodiment will be described with reference to the drawings. It should be noted that in the accompanying drawings, the same reference numerals are given to the same members, and a part of the description is omitted.

本實施方式的透明導電性基板的製造方法可具有對包含「透明基材」及「在透明基材的至少一個表面上所配置的積層體」的積層體基板的積層體進行圖案化的圖案化步驟。 The method for manufacturing a transparent conductive substrate according to this embodiment may include patterning a multilayer body including a multilayer substrate including a “transparent substrate” and a “layer disposed on at least one surface of the transparent substrate”. step.

圖2A~圖2D示出了使用圖1A所示的積層體基板10A實施圖案化步驟的例子。圖2A~圖2D示出了積層體基板10A的與透明基材11和積層體121的積層方向平行的面的斷面模式圖。 2A to 2D show examples of performing a patterning step using the multilayer substrate 10A shown in FIG. 1A. 2A to 2D are schematic cross-sectional views of a surface of the multilayer substrate 10A that is parallel to the stack direction of the transparent substrate 11 and the multilayer 121.

在實施本實施方式的透明導電性基板的製造方法的圖案化步驟的情況下,可預先在積層體基板10A的積層體121的表面中的、與透明基材11相對的表面121a的相反側的表面121b上配置阻劑圖案21。阻劑圖案21可具有與積層體121的圖案化步驟中要除去的部分相對應的形狀的開口部21A。 When the patterning step of the method for manufacturing a transparent conductive substrate according to the present embodiment is performed, the surface of the multilayer body 121 of the multilayer substrate 10A may be opposite to the surface 121 a of the multilayer substrate 121 opposite to the transparent substrate 11 in advance. A resist pattern 21 is disposed on the surface 121b. The resist pattern 21 may have an opening portion 21A having a shape corresponding to a portion to be removed in the patterning step of the laminated body 121.

此外,圖案化步驟可具有藉由能溶解銅的第1蝕刻液對導電層進行蝕刻的導電層蝕刻階段。 In addition, the patterning step may include a conductive layer etching step of etching the conductive layer with a first etching solution capable of dissolving copper.

藉由實施導電層蝕刻階段,如圖2B所示,可對積層體121的導電層121B進行圖案化,從而成為配線即導電配線層22。此時,就第1黑化層121A而言,由於基本上沒有被進行蝕刻,故如圖2B所示,可保持與實施導電層蝕刻階段前同樣的形狀。 By conducting the conductive layer etching step, as shown in FIG. 2B, the conductive layer 121B of the laminated body 121 can be patterned to become the conductive wiring layer 22 that is a wiring. At this time, since the first blackening layer 121A is not substantially etched, as shown in FIG. 2B, the same shape as that before the conductive layer etching step can be maintained.

作為第1蝕刻液,只要是可溶解銅的蝕刻液即可,對其並無特別限定,但例如可更優選使用含有從硫酸、過氧化氫水、鹽酸、氯化銅、及氯化鐵中選出的1種的水溶液、或者包含從上述硫酸等中選出的2種以上的混合水溶液。對蝕刻液中的各成分的含有量並無特別限定。然而,優選為,對第1蝕刻液中的各成分的濃度進行調整,以可選擇性地蝕刻導電層。 The first etching solution is not particularly limited as long as it is an etching solution capable of dissolving copper. For example, it is more preferable to use an etching solution containing sulfuric acid, hydrogen peroxide water, hydrochloric acid, copper chloride, and iron chloride. The selected one kind of aqueous solution or a mixed aqueous solution containing two or more kinds selected from the above-mentioned sulfuric acid and the like. The content of each component in the etching solution is not particularly limited. However, it is preferable to adjust the concentration of each component in the first etching solution so that the conductive layer can be selectively etched.

蝕刻液可在室溫下使用,但為了提高反應性,也可將其加溫後再使用,例如,可將其加熱至30℃以上且50℃以下後再使用。 The etchant can be used at room temperature, but in order to improve the reactivity, it can also be used after being heated. For example, it can be used after being heated to 30 ° C or higher and 50 ° C or lower.

接下來,可實施藉由含有氯化物離子和水的第2蝕刻液對第1黑化層進行蝕刻的第1黑化層蝕刻階段。 Next, a first blackened layer etching step of etching the first blackened layer with a second etchant containing chloride ions and water may be performed.

藉由實施第1黑化層蝕刻階段,如圖2C所示,可對導電層蝕刻階段之後沒有被圖案化而殘留了的積層體121的第1黑化層121A進行圖案化,由此可製成圖案化了的第1黑化層即第1黑化配線層23。 By performing the first blackening layer etching step, as shown in FIG. 2C, the first blackening layer 121A of the multilayer body 121 that has not been patterned and remains after the conductive layer etching step can be patterned, thereby making it possible to produce The first blackened wiring layer 23 which is a patterned first blackened layer is formed.

此外,在第1黑化層蝕刻階段中,藉由使用含有氯化物離子和水的第2蝕刻液,能以抑制殘渣的發生並成為期望形狀的方式對含有鎳和銅的第1黑化層進行圖案化,並可抑制導電配線層22的側蝕的發生。 In addition, in the first blackening layer etching stage, by using a second etching solution containing chloride ions and water, the first blackening layer containing nickel and copper can be formed in a manner that suppresses the occurrence of residues and has a desired shape. Patterning can suppress the occurrence of side etching of the conductive wiring layer 22.

作為第2蝕刻液,如上所述,只要含有氯化物離子和水即可,對各成分的濃度、其他成分等並無特別限定。然而,為了充分提高針對第1黑化層的反應性,就第2蝕刻液的氯化物離子的濃度而言,以鹽酸換算計時優選為10質量%以上。需要說明的是,以鹽酸換算計的氯化物離子的濃度是指,假定第2蝕刻液中所包含的氯化物離子都以鹽酸(HCl)的狀態而被包含時所計算出的濃度。 As the second etching solution, as described above, as long as it contains chloride ions and water, the concentration of each component, other components, and the like are not particularly limited. However, in order to sufficiently improve the reactivity with respect to the first blackened layer, the concentration of chloride ions in the second etching solution is preferably 10% by mass or more in terms of hydrochloric acid. The concentration of chloride ions in terms of hydrochloric acid refers to the concentration calculated when all chloride ions included in the second etching solution are contained in the state of hydrochloric acid (HCl).

此外,第2蝕刻液優選含有鹽酸和水。在第2蝕刻液含有鹽酸和水的情況下,對鹽酸的濃度並無特別限定,但優選為10質量%以上且37質量%以下。 The second etching solution preferably contains hydrochloric acid and water. When the second etching solution contains hydrochloric acid and water, the concentration of hydrochloric acid is not particularly limited, but it is preferably 10% by mass or more and 37% by mass or less.

其原因在於,藉由使鹽酸的濃度為10質量%以上,可充分提高與第1黑化層的反應性。還在於,就可容易獲得的鹽酸而言,濃度為37質量%以下左右,從成本等的觀點來看,優選為37質量%以下。 This is because the reactivity with the first blackened layer can be sufficiently improved by setting the concentration of hydrochloric acid to 10% by mass or more. In addition, the concentration of hydrochloric acid that can be easily obtained is about 37% by mass or less, and from the viewpoint of cost and the like, it is preferably 37% by mass or less.

此外,第2蝕刻液還可含有例如從氯化鐵和氯化銅中選出的1種以上。 The second etching solution may contain one or more selected from, for example, ferric chloride and copper chloride.

然而,如果第2蝕刻液內的鐵離子濃度和/或銅離子濃度過高,則存在會腐蝕導電層和/或對導電層進行圖案化而成的導電配線層的可能性。為此,第2蝕刻液內的鐵離子濃度優選為0.2質量%以下。另外,第2蝕刻液內的銅離子濃度優選為0.4質量%以下。需要說明的是,第2蝕刻液也可製成不含有鐵離子和/或銅離子的構成,故鐵離子濃度可為0以上。此外,銅離子濃度也可為0以上。 However, if the iron ion concentration and / or copper ion concentration in the second etching solution are too high, there is a possibility that the conductive layer is corroded and / or the conductive wiring layer is formed by patterning the conductive layer. Therefore, the iron ion concentration in the second etching solution is preferably 0.2% by mass or less. The copper ion concentration in the second etching solution is preferably 0.4% by mass or less. In addition, since the 2nd etching liquid can also be set as the structure which does not contain iron ion and / or copper ion, the iron ion concentration may be 0 or more. The copper ion concentration may be 0 or more.

由上述可知,第2蝕刻液含有鹽酸和水,鹽酸濃度為10質量%以上且37質量%以下,鐵離子濃度可為0.2質量%以下。 From the above, it can be seen that the second etching solution contains hydrochloric acid and water, the concentration of hydrochloric acid is 10% by mass or more and 37% by mass or less, and the iron ion concentration may be 0.2% by mass or less.

此外,第2蝕刻液例如含有鹽酸和水,鹽酸濃度為10質量%以上且37質量%以下,銅離子濃度可為0.4質量%以下。 The second etching solution contains, for example, hydrochloric acid and water. The concentration of hydrochloric acid is 10% by mass or more and 37% by mass or less, and the copper ion concentration may be 0.4% by mass or less.

圖案化步驟之後,如圖2D所示,藉由對阻劑圖案21進行剝離和除去,可獲得具有對導電層和黑化層進行圖案化而成的導電配線層22和圖案化了的第1黑化層即第1黑化配線層23的透明導電性基板。 After the patterning step, as shown in FIG. 2D, by stripping and removing the resist pattern 21, a conductive wiring layer 22 having a patterned conductive layer and a blackened layer and a patterned first layer can be obtained. The transparent conductive substrate of the first blackened wiring layer 23 which is a blackened layer.

就阻劑圖案21的剝離和除去方法而言,可根據所使用的阻劑的種類採用任意的方法,但例如可浸漬於氫氧化鈉水溶液,以使阻劑圖案膨潤和剝離,由此進行除去。 The method of peeling and removing the resist pattern 21 may be any method depending on the type of the resist used. For example, the resist pattern 21 may be immersed in an aqueous sodium hydroxide solution to swell and peel the resist pattern, thereby removing the resist pattern. .

在圖案化步驟的導電層蝕刻階段和第1黑化層蝕刻階段之間、第1黑化層蝕刻階段之後等時,例如還可對實施了圖案化處理的積層體基板進行清洗(水洗)等。如此,藉由在圖案化步驟的各步驟之後進行清洗,可構成 為,不會將附著在積層體基板上的蝕刻液帶入後續步驟中。剝離了阻劑圖案之後,也可根據需要進行清洗、乾燥等。在後述的圖案化步驟的其他構成例的情況下,同樣地也可在各步驟之間和/或各步驟之後,對實施了圖案化處理的積層體基板進行清洗等。 Between the conductive layer etching step and the first blackened layer etching step of the patterning step, and after the first blackened layer etching step, for example, the laminated body substrate subjected to the patterning process may be washed (washed), etc. . As described above, by performing cleaning after each step of the patterning step, it is possible to prevent the etching solution adhering to the laminated substrate from being carried into the subsequent steps. After the resist pattern is peeled off, washing, drying, etc. may be performed as necessary. In the case of other configuration examples of the patterning step described later, similarly, the laminated body substrate subjected to the patterning process may be cleaned and the like between and / or after each step.

此外,供本實施方式的透明導電性基板的製造方法使用的積層體基板如上所述還可具有第2黑化層。以下使用圖3A~圖3E對該情況下的本實施方式的透明導電性基板的製造方法的一構成例進行說明。 Moreover, the laminated body substrate used for the manufacturing method of the transparent conductive substrate of this embodiment may have a 2nd blackening layer as mentioned above. Hereinafter, a configuration example of the manufacturing method of the transparent conductive substrate of this embodiment in this case will be described using FIGS. 3A to 3E.

如參照圖1B所說明的那樣,積層體基板10B的積層體122可在導電層122B的與第1黑化層122A相對的表面的相反側的表面上還具有一含有鎳和銅的第2黑化層122C。 As described with reference to FIG. 1B, the multilayer body 122 of the multilayer substrate 10B may further include a second blackening layer containing nickel and copper on the surface of the conductive layer 122B opposite to the surface facing the first blackening layer 122A. Layer 122C.

此情況下,如圖3A所示,也可預先在積層體基板10B的積層體122的表面中的、與透明基材11相對的表面122a的相反側的表面122b上配置阻劑圖案31。阻劑圖案31可具有與在積層體122的圖案化步驟中要除去的部分相對應的形狀的開口部31A。 In this case, as shown in FIG. 3A, a resist pattern 31 may be arranged in advance on a surface 122 b on the side opposite to the surface 122 a of the laminated body 122 of the laminated body substrate 10B opposite to the surface 122 a of the transparent substrate 11. The resist pattern 31 may have an opening portion 31A having a shape corresponding to a portion to be removed in the patterning step of the laminated body 122.

此外,在圖案化步驟中,如圖3B所示,在導電層蝕刻階段之前,還可具有藉由第2蝕刻液對第2黑化層122C進行蝕刻的第2黑化層蝕刻階段。 In addition, in the patterning step, as shown in FIG. 3B, before the conductive layer etching step, a second blackening layer etching step of etching the second blackening layer 122C with a second etching solution may be further included.

關於第2蝕刻液,由於已經進行了說明,故這裡省略其說明。 Since the second etching solution has already been described, its description is omitted here.

藉由實施第2黑化層蝕刻階段,如圖3B所示,可對積層體122的第2黑化層122C進行圖案化,以作為圖案化了的第2黑化層即第2黑化配線層32。就導電層122B而言,基本上沒有被第2蝕刻液進行蝕刻,故,如圖3B所示,可保持與第2黑化層蝕刻階段前大致同樣的形狀。 By performing the second blackening layer etching step, as shown in FIG. 3B, the second blackening layer 122C of the laminated body 122 can be patterned to serve as a second blackening wiring that is a patterned second blackening layer. Layer 32. Since the conductive layer 122B is not substantially etched by the second etchant, as shown in FIG. 3B, the shape substantially the same as that before the second blackening layer etching step can be maintained.

之後,與上述構成例的情況下同樣地,可實施藉由能溶解銅的第1蝕刻液對導電層122B進行蝕刻的導電層蝕刻階段。據此,如圖3C所示,可 對導電層122B進行圖案化,以作為導電配線層33。 Thereafter, as in the case of the configuration example described above, a conductive layer etching step of etching the conductive layer 122B with a first etching solution capable of dissolving copper can be performed. Accordingly, as shown in FIG. 3C, the conductive layer 122B can be patterned as the conductive wiring layer 33.

接下來,可實施藉由含有氯化物離子和水的第2蝕刻液對第1黑化層122A進行蝕刻的第1黑化層蝕刻階段。據此,如圖3D所示,可形成圖案化了的第1黑化層即第1黑化配線層34。 Next, a first blackened layer etching step of etching the first blackened layer 122A with a second etchant containing chloride ions and water may be performed. Accordingly, as shown in FIG. 3D, a first blackened wiring layer 34 that is a patterned first blackened layer can be formed.

關於導電層蝕刻階段和第1黑化層蝕刻階段,由於已經進行了說明,故這裡省略其說明。 Since the conductive layer etching stage and the first blackened layer etching stage have already been described, their descriptions are omitted here.

圖案化步驟之後,如圖3E所示,藉由對阻劑圖案31進行剝離和除去,可獲得具有對第2黑化層122C、導電層122B、及第1黑化層122A進行圖案化而成的、第2黑化配線層32、導電配線層33、及第1黑化配線層34的透明導電性基板。 After the patterning step, as shown in FIG. 3E, by peeling and removing the resist pattern 31, a pattern obtained by patterning the second blackened layer 122C, the conductive layer 122B, and the first blackened layer 122A can be obtained. A transparent conductive substrate of the second blackened wiring layer 32, the conductive wiring layer 33, and the first blackened wiring layer 34.

以下參照圖4A~圖4D對供本實施方式的透明導電性基板的製造方法使用的積層體基板的積層體在導電層的與第1黑化層相對的表面的相反側的表面上還具有一含有鎳和銅的第2黑化層的情況下的、本實施方式的透明導電性基板的製造方法的其他構成例進行說明。 Hereinafter, referring to FIGS. 4A to 4D, the multilayer body of the multilayer body substrate used in the method for manufacturing a transparent conductive substrate according to the present embodiment further has a surface on the opposite side of the surface of the conductive layer opposite to the first blackened layer. In the case of containing the second blackening layer of nickel and copper, another configuration example of the method for manufacturing the transparent conductive substrate of the present embodiment will be described.

此情況下,如圖4A所示,也可預先在積層體基板10B的積層體122的表面中的、與透明基材11相對的表面122a的相反側的表面122b上配置阻劑圖案41。阻劑圖案41可具有與在積層體122的圖案化步驟中要除去的部分相對應的形狀的開口部41A。 In this case, as shown in FIG. 4A, a resist pattern 41 may be disposed in advance on a surface 122 b on the opposite side of the surface 122 a of the multilayer body 122 of the multilayer substrate 10B that faces the transparent substrate 11. The resist pattern 41 may have an opening portion 41A having a shape corresponding to a portion to be removed in the patterning step of the laminated body 122.

另外,在圖案化步驟的導電層蝕刻階段中,如圖4B所示,可採用第1蝕刻液對導電層122B和第2黑化層122C進行蝕刻。 In the conductive layer etching step of the patterning step, as shown in FIG. 4B, the conductive layer 122B and the second blackened layer 122C may be etched by using a first etchant.

第1蝕刻液如上所述可對導電層122B進行蝕刻,並且,與第2黑化層122C的反應性較低。然而,由於第2黑化層122C配置在了導電層122B上,故藉由對導電層122B進行蝕刻,也可同樣地對第2黑化層122C進行蝕刻。 As described above, the first etching solution can etch the conductive layer 122B and has low reactivity with the second blackened layer 122C. However, since the second blackening layer 122C is disposed on the conductive layer 122B, the second blackening layer 122C can be similarly etched by etching the conductive layer 122B.

為此,藉由實施導電層蝕刻階段,可形成第2黑化配線層42和導 電配線層43。 For this reason, the second blackened wiring layer 42 and the conductive wiring layer 43 can be formed by performing a conductive layer etching step.

關於第1蝕刻液,由於已經進行了說明,故這裡省略其說明。 Since the first etching solution has already been described, its description is omitted here.

之後,與上述構成例的情況下同樣地,可實施藉由含有氯化物離子和水的第2蝕刻液對第1黑化層122A進行蝕刻的第1黑化層蝕刻階段。據此,如圖4C所示,可形成第1黑化配線層44。 Thereafter, as in the case of the configuration example described above, a first blackened layer etching step of etching the first blackened layer 122A with a second etchant containing chloride ions and water may be performed. Accordingly, as shown in FIG. 4C, the first blackened wiring layer 44 can be formed.

關於第1黑化層蝕刻階段,由於已經進行了說明,故這裡省略其說明。 Since the first blackening layer etching step has already been described, its description is omitted here.

圖案化步驟之後,如圖4D所示,藉由對阻劑圖案41進行剝離和除去,可獲得具有對第2黑化層122C、導電層122B、及第1黑化層122A進行圖案化而成的、第2黑化配線層42、導電配線層43、及第1黑化配線層44的透明導電性基板。 After the patterning step, as shown in FIG. 4D, by peeling and removing the resist pattern 41, the second blackening layer 122C, the conductive layer 122B, and the first blackening layer 122A can be obtained. A transparent conductive substrate of the second blackened wiring layer 42, the conductive wiring layer 43, and the first blackened wiring layer 44.

需要說明的是,至此為止,盡管示出了使用僅在透明基材11的一個表面上配置了積層體的積層體基板來實施圖案化步驟的例子,但並不限定於該形態。例如,也可使用在透明基材的一個表面和位於該一個表面的相反側的另一個表面上配置了積層體的積層體基板來實施圖案化步驟。就配置在一個表面上的積層體和配置在另一個表面上的積層體而言,可同時實施圖案化步驟,也可分別實施圖案化步驟。 In addition, although the example which performed the patterning process using the laminated body substrate in which the laminated body was arrange | positioned only on one surface of the transparent base material 11 was shown so far, it is not limited to this form. For example, the patterning step may be performed using a multilayer substrate in which a multilayer is arranged on one surface of the transparent substrate and the other surface located on the opposite side of the one surface. As for the laminated body arranged on one surface and the laminated body arranged on the other surface, the patterning step may be performed at the same time, or the patterning step may be performed separately.

對本實施方式的透明導電性基板的圖案化步驟中形成的圖案並無特別限定,可根據用途等進行任意選擇。例如在使用於觸控面版的用途的情況下,有時會要求具有網格(mesh)狀(格子狀)配線的透明導電性基板。為此,例如可對導電層進行圖案化以使其成為格子狀的導電配線層。此外,設置第1黑化層和第2黑化層的目的在於抑制導電層表面的光反射,故優選對這些層也進行圖案化,以使與透明基材的配置了積層體的表面平行的面的斷面形狀和導電配線層的形狀相同。 The pattern formed in the patterning step of the transparent conductive substrate according to this embodiment is not particularly limited, and can be arbitrarily selected according to the application and the like. For example, when used for a touch panel, a transparent conductive substrate having mesh-shaped (lattice) wiring may be required. For this purpose, for example, the conductive layer may be patterned so as to be a grid-shaped conductive wiring layer. In addition, the purpose of providing the first blackening layer and the second blackening layer is to suppress light reflection on the surface of the conductive layer. Therefore, it is preferable to pattern these layers so that they are parallel to the surface of the transparent substrate on which the laminated body is disposed. The cross-sectional shape of the surface is the same as that of the conductive wiring layer.

對具有網格狀配線的透明導電性基板的構成例進行說明。可藉由1個透明導電性基板獲得具有網格狀配線的透明導電性基板,但也可藉由組合2個透明導電性基板的方式來獲得具有網格狀配線的透明導電性基板。 A configuration example of a transparent conductive substrate having a grid-like wiring will be described. A transparent conductive substrate having a grid-like wiring can be obtained from one transparent conductive substrate, but a transparent conductive substrate having a grid-like wiring can also be obtained by combining two transparent conductive substrates.

圖5示出了具有網格狀配線的透明導電性基板的俯視圖,圖6A和圖6B分別示出了沿圖5的A-A’線的斷面圖的構成例。需要說明的是,俯視圖是指,從與透明基材11的配置了積層體的表面垂直的方向從上方觀察的圖。此外,圖5中省略了第1黑化配線層和第2黑化配線層的記載,但就第1黑化配線層和第2黑化配線層而言,與透明基材11的配置了導電配線層51A等的表面平行的面的斷面形狀可具有與相鄰的導電配線層51A、51B相同的形狀。 Fig. 5 is a plan view of a transparent conductive substrate having a grid-like wiring, and Figs. 6A and 6B each show a configuration example of a cross-sectional view taken along line A-A 'in Fig. 5. In addition, a top view is a figure seen from the upper direction from the direction orthogonal to the surface on which the laminated body of the transparent base material 11 was arrange | positioned. In addition, the description of the first blackened wiring layer and the second blackened wiring layer is omitted in FIG. 5, but the first blackened wiring layer and the second blackened wiring layer are electrically conductive with the arrangement of the transparent substrate 11. The cross-sectional shape of a parallel surface of the wiring layer 51A and the like may have the same shape as that of the adjacent conductive wiring layers 51A and 51B.

就圖5所示的透明導電性基板50而言,藉由與Y軸方向平行的線狀導電配線層51A和與X軸方向平行的線狀導電配線層51B,形成了格子狀的配線。 In the transparent conductive substrate 50 shown in FIG. 5, a grid-shaped wiring is formed by a linear conductive wiring layer 51A parallel to the Y-axis direction and a linear conductive wiring layer 51B parallel to the X-axis direction.

此外,如圖6A所示,也可製成在透明基材11的一個表面11a上配置了導電配線層51A,並在另一個表面11b上配置了導電配線層51B的構成。此情況下,如圖6A所示,在導電配線層51A、51B的透明基材11側可配置第1黑化配線層52A、52B。另外,還可為在導電配線層51A、51B的與透明基材11側相反側的表面上配置了第2黑化配線層53A、53B的構成。需要說明的是,也可為不具有第2黑化配線層53A、53B的結構。 In addition, as shown in FIG. 6A, a configuration in which a conductive wiring layer 51A is disposed on one surface 11 a of the transparent substrate 11 and a conductive wiring layer 51B is disposed on the other surface 11 b may be adopted. In this case, as shown in FIG. 6A, the first blackened wiring layers 52A and 52B may be disposed on the transparent substrate 11 side of the conductive wiring layers 51A and 51B. A configuration in which the second blackened wiring layers 53A and 53B are arranged on the surfaces of the conductive wiring layers 51A and 51B opposite to the transparent substrate 11 side may be employed. In addition, it is good also as a structure which does not have the 2nd blackening wiring layers 53A and 53B.

就圖5和圖6A所示的結構的透明導電性基板而言,例如可藉由以下的步驟進行製造。首先,針對2個在透明基材的一個表面上配置了積層體的積層體基板,藉由上述的圖案化步驟對積層體進行圖案化,以成為互相平行的複數個直線狀的圖案。接下來,調整方向以使2個透明導電性基板的複數個直線狀的配線成為網格狀,並使透明基材的沒有配置積層體的另一個表面之間進行貼合,由此可進行製造。此情況下,圖6A的透明基材11為對2個透明基材 進行了貼合的構成。 The transparent conductive substrate having the structure shown in FIGS. 5 and 6A can be manufactured, for example, by the following steps. First, two laminated substrates having a laminated body disposed on one surface of a transparent substrate are patterned by the above-mentioned patterning step to form a plurality of linear patterns parallel to each other. Next, the direction can be adjusted so that a plurality of linear wirings of the two transparent conductive substrates are in a grid shape, and the other surfaces of the transparent base material on which the laminated body is not disposed are bonded to each other. . In this case, the transparent substrate 11 of Fig. 6A has a structure in which two transparent substrates are bonded together.

此外,圖5和圖6A所示的結構的透明導電性基板還可藉由以下步驟進行製造。首先,準備1個在透明基材的一個表面和與該一個表面相反側的另一個表面上分別配置了積層體的積層體基板。然後,藉由圖案化步驟對透明基材的兩個表面上所配置的積層體進行圖案化,以使該積層體的配線即導電配線層變為與圖5和圖6A同樣的構成。 In addition, the transparent conductive substrate having the structure shown in FIGS. 5 and 6A can also be manufactured by the following steps. First, a multilayer substrate in which a multilayer is arranged on one surface of the transparent substrate and the other surface opposite to the one surface is prepared. Then, the laminated body disposed on both surfaces of the transparent substrate is patterned in a patterning step so that the conductive wiring layer, which is a wiring of the laminated body, has the same configuration as that of FIGS. 5 and 6A.

此外,如圖5和圖6B所示,也可製成導電配線層51A配置在透明基材11A上,並且導電配線層51B配置在透明基材11A和透明基材11B之間的構成。此情況下,在導電配線層51A、51B的透明基材11A、11B側也可配置第1黑化配線層52A、52B。另外,還可為在導電配線層51A、51B的與透明基材11A、11B側相反側的表面上配置第2黑化配線層53A、53B的構成。需要說明的是,此情況下,也可為不具有第2黑化配線層53A、53B的結構。 In addition, as shown in FIG. 5 and FIG. 6B, a configuration in which the conductive wiring layer 51A is disposed on the transparent substrate 11A and the conductive wiring layer 51B is disposed between the transparent substrate 11A and the transparent substrate 11B may be adopted. In this case, the first blackened wiring layers 52A and 52B may be disposed on the transparent substrates 11A and 11B of the conductive wiring layers 51A and 51B. A configuration in which the second blackened wiring layers 53A and 53B are arranged on the surfaces of the conductive wiring layers 51A and 51B opposite to the transparent substrates 11A and 11B may be employed. In addition, in this case, the structure which does not have the 2nd blackening wiring layers 53A and 53B may be sufficient.

圖5和圖6B所示的結構的透明導電性基板例如可藉由以下步驟進行製造。首先,針對2個在透明基材的一個表面上配置了積層體的積層體基板,藉由上述的圖案化步驟對積層體進行圖案化,以成為互相平行的複數個直線狀的圖案。然後,調整方向以使2個透明導電性基板的複數個直線狀的配線成為網格狀,並將一個透明導電性基板的透明基材的沒有配置積層體的另一個表面和另一個透明導電性基板的圖案化了的積層體的露出表面進行貼合,由此可進行製造。 The transparent conductive substrate having the structure shown in FIGS. 5 and 6B can be manufactured, for example, by the following steps. First, two laminated substrates having a laminated body disposed on one surface of a transparent substrate are patterned by the above-mentioned patterning step to form a plurality of linear patterns parallel to each other. Then, the direction is adjusted so that a plurality of linear wirings of the two transparent conductive substrates are in a grid shape, and the other surface of the transparent base material of one transparent conductive substrate without the laminated body and the other transparent conductive material is arranged. The exposed surfaces of the patterned laminates of the substrates can be bonded together to manufacture.

需要說明的是,圖5、圖6A、及圖6B中示出了藉由組合直線形狀的配線即導電配線層以形成網格狀配線(配線圖案)的例子,但並不限定於該形態,構成配線圖案的配線可為任意形狀。例如,為了不與顯示器的圖像之間產生疊紋(moiré),還可將構成網格狀配線圖案的導電配線層的形狀分別設計為彎曲成鋸齒狀的線(“之”字直線)等的各種形狀。 In addition, FIG. 5, FIG. 6A, and FIG. 6B show the example which formed the grid-shaped wiring (wiring pattern) by combining the linear wiring which is a conductive wiring layer, but it is not limited to this form, The wiring constituting the wiring pattern may have any shape. For example, in order not to cause moiré with the image of the display, the shape of the conductive wiring layer constituting the grid-like wiring pattern may be designed as a zigzag line (a zigzag straight line), etc. Of various shapes.

本實施方式的透明導電性基板的製造方法還可具有除了上述圖案化步驟之外的任意步驟。 The method for manufacturing a transparent conductive substrate according to this embodiment may further include any step other than the patterning step described above.

例如,圖案化步驟之前,也可還具有在積層體的與透明基材相對的表面的相反側的表面即露出表面上配置阻劑的阻劑配置步驟。 For example, before the patterning step, there may be a resist disposing step of disposing a resist on a surface opposite to the surface of the laminated body opposite to the surface of the transparent substrate, that is, the exposed surface.

阻劑配置步驟還可具有以下階段。 The resist configuration step may also have the following stages.

在露出表面上形成感光性阻劑層的感光性阻劑層形成階段。 A photoresist layer formation stage in which a photoresist layer is formed on the exposed surface.

根據欲形成的阻劑圖案對感光性阻劑層進行紫外線曝光,並對未曝光部分進行顯影,由此形成阻劑圖案的阻劑圖案形成階段。 According to the resist pattern to be formed, the photosensitive resist layer is exposed to ultraviolet rays, and an unexposed portion is developed, thereby forming a resist pattern at a resist pattern forming stage.

在阻劑配置步驟中,可形成圖2A、圖3A、圖4A所示的阻劑圖案21、31、41。 In the resist arrangement step, the resist patterns 21, 31, and 41 shown in FIGS. 2A, 3A, and 4A can be formed.

若使用圖2A進行說明,則首先可在積層體121的與透明基材11相對的表面121a的相反側的表面121b上形成感光性阻劑層。就形成感光性阻劑層的方法而言,盡管視所使用的阻劑類型而有所不同,但可列舉出在積層體121的欲配置阻劑的表面121b上進行塗敷的方法、藉由層壓(laminate)法等進行貼附的方法等。 2A, first, a photosensitive resist layer may be formed on the surface 121b on the side opposite to the surface 121a of the laminated body 121 opposite to the transparent substrate 11. The method for forming the photosensitive resist layer is different depending on the type of the resist used, but a method of applying the resist 121 on the surface 121b of the multilayer body 121 to be coated may be used. A method of attaching such as a laminate method and the like.

接下來,使用掩膜(mask)等,根據要形成的阻劑圖案進行紫外線曝光,然後例如藉由對未曝光部分進行顯影和除去,可形成阻劑圖案。 Next, using a mask or the like, UV exposure is performed according to the resist pattern to be formed, and then, for example, by developing and removing the unexposed portion, a resist pattern can be formed.

對感光性阻劑層的顯影方法並無特別限定,但可列舉出浸漬於顯影液例如碳酸鈉水溶液等的方法。 The method of developing the photosensitive resist layer is not particularly limited, but examples thereof include a method of immersing in a developing solution such as an aqueous sodium carbonate solution.

此外,本實施方式的透明導電性基板的製造方法例如也可具有積層體基板製造步驟。 Moreover, the manufacturing method of the transparent conductive substrate of this embodiment may have a laminated body substrate manufacturing process, for example.

積層體基板製造步驟例如還可具有以下步驟。 The multilayer substrate manufacturing step may further include, for example, the following steps.

在透明基材的至少一個表面上形成第1黑化層的第1黑化層形成階段。 A first blackened layer forming step of forming a first blackened layer on at least one surface of a transparent substrate.

在第1黑化層上形成導電層的導電層形成階段。 A conductive layer forming stage in which a conductive layer is formed on the first blackened layer.

此外,根據需要還可具有在導電層上形成第2黑化層的第2黑化層形成階段。 In addition, if necessary, there may be a second blackened layer forming step of forming a second blackened layer on the conductive layer.

關於第1黑化層、導電層、及第2黑化層的具體形成方法的例子,由於已經進行了說明,故這裡省略其說明。 Examples of specific methods for forming the first blackened layer, the conductive layer, and the second blackened layer have already been described, and thus descriptions thereof are omitted here.

此外,也可具有對圖案化步驟之後的複數個透明導電性基板如上所述進行貼合以成為例如網格狀配線的貼合步驟。 Further, there may be a bonding step of bonding a plurality of transparent conductive substrates after the patterning step as described above to form, for example, a grid-like wiring.

根據以上說明的本實施方式的透明導電性基板的製造方法,採用不同的蝕刻液對與透明基材相接的第1黑化層和導電層進行蝕刻,藉此可抑制在透明基材上生成第1黑化層的殘渣。此外,還可抑制導電層的側蝕變大。 According to the manufacturing method of the transparent conductive substrate of the present embodiment described above, the first blackened layer and the conductive layer that are in contact with the transparent substrate are etched using different etching solutions, thereby suppressing the formation on the transparent substrate. Residue of the first blackened layer. In addition, the side etching of the conductive layer can be suppressed from becoming large.

為此,根據本實施方式的透明導電性基板的製造方法,可將黑化層圖案化為期望形狀。 For this reason, according to the manufacturing method of the transparent conductive substrate of this embodiment, a blackening layer can be patterned into a desired shape.

〔透明導電性基板〕     [Transparent conductive substrate]    

接下來,對本實施方式的透明導電性基板的一構成例進行說明。 Next, a configuration example of the transparent conductive substrate according to this embodiment will be described.

需要說明的是,本實施方式的透明導電性基板例如可藉由上述的透明導電性基板的製造方法進行製造。為此,對已經說明了的事項的一部分的說明進行了省略。 In addition, the transparent conductive substrate of this embodiment can be manufactured by the manufacturing method of the transparent conductive substrate mentioned above, for example. For this reason, the description of a part of the items already described is omitted.

此外,以下說明的第1黑化配線層、導電配線層、及第2黑化配線層如上所述可藉由分別對第1黑化層、導電層、及第2黑化層進行圖案化而形成。為此,就第1黑化配線層、導電配線層、及第2黑化配線層而言,除了進行了圖案化這點之外,可分別具有與透明導電性基板的製造方法中所述的第1黑化層、導電層、及第2黑化層同樣的構成。 In addition, as described above, the first blackened wiring layer, the conductive wiring layer, and the second blackened wiring layer can be patterned by patterning the first blackened layer, the conductive layer, and the second blackened layer, respectively, as described above. form. Therefore, the first blackened wiring layer, the conductive wiring layer, and the second blackened wiring layer may be patterned, and may have the same characteristics as those described in the method for manufacturing a transparent conductive substrate. The first blackened layer, the conductive layer, and the second blackened layer have the same configuration.

本實施方式的透明導電性基板可具有透明基材、及在透明基材的至少一個表面上所配置的金屬細線。 The transparent conductive substrate according to this embodiment may include a transparent base material and fine metal wires arranged on at least one surface of the transparent base material.

此外,金屬細線可為含有鎳和銅的第1黑化配線層和含有銅的導電配線層從透明基材側開始依次進行了積層的積層體。 The thin metal wire may be a laminated body in which a first blackened wiring layer containing nickel and copper and a conductive wiring layer containing copper are laminated in this order from the transparent substrate side.

另外,在從與透明基材的一個表面垂直的方向進行觀察的情況下,從導電配線層伸出(protrude)了的第1黑化配線層的伸出寬度可設為0.5μm以下。 In addition, when viewed from a direction perpendicular to one surface of the transparent substrate, the protruding width of the first blackened wiring layer protruded from the conductive wiring layer may be 0.5 μm or less.

這裡,首先使用圖7A和圖7B對本實施方式的透明導電性基板進行說明。圖7A示出了本實施方式的透明導電性基板的透明基材、及與金屬細線的積層方向平行的面的斷面模式圖。 Here, a transparent conductive substrate according to this embodiment will be described first with reference to FIGS. 7A and 7B. FIG. 7A is a schematic cross-sectional view showing a transparent base material of a transparent conductive substrate according to the present embodiment and a plane parallel to the lamination direction of thin metal wires.

如圖7A所示,本實施方式的透明導電性基板70可具有在透明基材11的至少一個表面11a上配置了具有第1黑化配線層712和導電配線層711的金屬細線71的結構。 As shown in FIG. 7A, the transparent conductive substrate 70 of the present embodiment may have a structure in which metal thin wires 71 including a first blackened wiring layer 712 and a conductive wiring layer 711 are arranged on at least one surface 11 a of the transparent base material 11.

這裡,圖7B示出了在從與透明基材11的一個表面11a垂直的方向觀察圖7A所示的透明導電性基板70的情況下、即、沿圖中的塊狀箭頭A觀察透明導電性基板的情況下的、由點線(虛線)所圍成的區域B的放大圖。 Here, FIG. 7B shows a case where the transparent conductive substrate 70 shown in FIG. 7A is viewed from a direction perpendicular to the one surface 11 a of the transparent substrate 11, that is, the transparent conductivity is viewed along the block arrow A in the figure. In the case of a substrate, an enlarged view of a region B surrounded by dotted lines (dashed lines).

在透明導電性基板的製造方法中如上所述藉由對第1黑化層等進行圖案化,可獲得在透明基材11上對圖案化了的第1黑化配線層712和導電配線層711進行了積層的金屬細線71。然而,在對第1黑化層等進行圖案化的過程中,存在第1黑化層的一部分發生溶解殘留,導致第1黑化配線層712與導電配線層711相比進行了伸出的情況。為此,在本實施方式的透明導電性基板中,該第1黑化配線層712的伸出寬度L優選為0.5μm以下。 In the method for manufacturing a transparent conductive substrate, by patterning the first blackened layer and the like as described above, the patterned first blackened wiring layer 712 and the conductive wiring layer 711 can be obtained on the transparent substrate 11. The thin metal wires 71 are laminated. However, in the process of patterning the first blackened layer and the like, a part of the first blackened layer is dissolved and remained, which may cause the first blackened wiring layer 712 to protrude from the conductive wiring layer 711. . For this reason, in the transparent conductive substrate of the present embodiment, the protruding width L of the first blackened wiring layer 712 is preferably 0.5 μm or less.

第1黑化配線層712的伸出寬度L較佳設為0,故第1黑化配線層712的伸出寬度L可設為0以上。 The extension width L of the first blackened wiring layer 712 is preferably set to 0, so the extension width L of the first blackened wiring layer 712 can be set to 0 or more.

對使第1黑化配線層712的伸出寬度L位於上述範圍的方法並無特別限定,但例如藉由採用上述的透明導電性基板的製造方法可設為上述範圍。 The method of making the protruding width L of the first blackened wiring layer 712 within the above range is not particularly limited, but it can be set to the above range by, for example, the manufacturing method using the above-mentioned transparent conductive substrate.

圖7A和圖7B中示出了金屬細線由第1黑化配線層712和導電配線層711構成的例子,但並不限定於該形態。例如,金屬細線也可在導電配線層711的與第1黑化配線層712相對的表面的相反側的表面上還具有一含有鎳和銅的第2黑化配線層。 7A and 7B show an example in which the thin metal wire is composed of the first blackened wiring layer 712 and the conductive wiring layer 711, but the invention is not limited to this configuration. For example, the thin metal wire may further include a second blackened wiring layer containing nickel and copper on a surface of the conductive wiring layer 711 opposite to the surface opposite to the first blackened wiring layer 712.

此外,圖7A中示出了僅在透明基材11的一個表面11a上配置了金屬細線的例子,但並不限定於該形態。如基於圖6A等所說明的那樣,在透明基材11的另一個表面11b上也可配置金屬細線。此情況下,透明基材11的一個表面11a上所配置的金屬細線和另一個表面11b上所配置的金屬細線所含的層的構成可不相同。例如,也可在一個表面11a上配置具有第1黑化配線層和導電配線層的金屬細線,並在另一個表面11b上配置具有第1黑化配線層、導電配線層、及第2黑化配線層的金屬細線。然而,不論在哪種金屬細線中,所含有的第1黑化配線層的伸出寬度都優選滿足上述的範圍。 Although FIG. 7A shows an example in which fine metal wires are arranged on only one surface 11 a of the transparent base material 11, the present invention is not limited to this form. As described with reference to FIG. 6A and the like, a thin metal wire may be disposed on the other surface 11 b of the transparent substrate 11. In this case, the configuration of the layers included in the thin metal wires arranged on one surface 11 a of the transparent substrate 11 and the thin metal wires arranged on the other surface 11 b may be different. For example, a thin metal wire having a first blackened wiring layer and a conductive wiring layer may be arranged on one surface 11a, and a first blackened wiring layer, a conductive wiring layer, and a second blackening may be arranged on the other surface 11b. Thin metal wires on the wiring layer. However, it is preferable that the protruding width of the first blackened wiring layer included in the thin metal wire satisfies the above range.

需要說明的是,在另一個表面上配置金屬細線的情況下,就該另一個表面側的金屬細線中的從導電配線層伸出的第1黑化配線層的伸出寬度而言,為了可對該伸出進行確認,可從透明基材的另一個表面側進行觀察以進行測定。透明基材一般而言其一個表面和另一個表面平行,故在對另一個表面側的第1黑化配線層的伸出寬度進行測定的情況下,從與透明基材的一個表面垂直的方向進行觀察也可以說成是,從與透明基材的另一個表面垂直的方向進行觀察。此外,在這樣地於透明基材的一個表面和另一個表面都配置了金屬細線的情況下,第1黑化配線層的伸出寬度是指,從與該第1黑化層位於同側的導電配線層、即相鄰的導電配線層伸出的伸出寬度。 It should be noted that, when a thin metal wire is disposed on the other surface, the projected width of the first blackened wiring layer protruding from the conductive wiring layer among the thin metal wires on the other surface side is to make the This protrusion is confirmed, and measurement can be performed by observing from the other surface side of the transparent substrate. Generally, one surface of the transparent substrate is parallel to the other surface. Therefore, when measuring the extension width of the first blackened wiring layer on the other surface side, the transparent substrate is from a direction perpendicular to the one surface of the transparent substrate. Observation can also be said to be observed from a direction perpendicular to the other surface of the transparent substrate. In addition, when thin metal wires are disposed on one surface and the other surface of the transparent substrate in this manner, the extension width of the first blackened wiring layer means that the width of the first blackened wiring layer is from the same side as the first blackened layer. The conductive wiring layer, that is, the protruding width of the adjacent conductive wiring layer.

此外,例如,如參照圖5、圖6A及圖6B所說明的那樣,也可藉由對複數個導電配線層進行組合,以獲得具有網格狀配線的透明導電性基板。 In addition, for example, as described with reference to FIGS. 5, 6A, and 6B, a plurality of conductive wiring layers may be combined to obtain a transparent conductive substrate having grid-shaped wiring.

需要說明的是,就第1黑化配線層而言,與透明基材的設置了金 屬細線的表面平行的面的斷面形狀優選為與導電配線層相同的形狀。為此,在藉由對導電配線層進行組合以獲得具有網格狀配線的導電性基板的情況下,就透明導電性基板所含的第1黑化配線層而言,也優選為,藉由組合而成為網格狀。在將第2黑化配線層設置於透明基材的兩個表面上的情況下,對第2黑化配線層而言也同樣。 In addition, in the first blackened wiring layer, the cross-sectional shape of a surface parallel to the surface of the transparent substrate on which the metal thin wires are provided is preferably the same shape as the conductive wiring layer. Therefore, when a conductive substrate having a grid-like wiring is obtained by combining the conductive wiring layers, the first blackened wiring layer included in the transparent conductive substrate is also preferably formed by Combined to form a grid. When the second blackened wiring layer is provided on both surfaces of the transparent substrate, the same applies to the second blackened wiring layer.

在本實施方式的透明導電性基板中,藉由在導電配線層的表面上設置第1黑化配線層,可提高透明基材和導電配線層之間的密接性,並可抑制導電配線層的第1黑化配線層側的表面的反射。對第1黑化配線層的表面的光反射程度並無特別限定,但例如第1黑化配線層的波長為400nm以上且700nm以下的光的反射率的平均值優選為15%以下。 In the transparent conductive substrate of this embodiment, by providing the first blackened wiring layer on the surface of the conductive wiring layer, it is possible to improve the adhesion between the transparent substrate and the conductive wiring layer, and to suppress the conductive wiring layer. Reflection on the surface of the first blackened wiring layer side. The degree of light reflection on the surface of the first blackened wiring layer is not particularly limited, but for example, the average value of the reflectance of light having a wavelength of 400 nm to 700 nm in the first blackened wiring layer is preferably 15% or less.

需要說明的是,就第1黑化配線層的波長為400nm以上且700nm以下的光的反射率的平均值而言,優選為,接近透明基材的光的反射率的平均值。為此,第1黑化配線層的波長為400nm以上且700nm以下的光的反射率的平均值的下限值可根據所使用的透明基材等進行選擇,對其並無特別限定。例如,在作為透明基材使用了聚對酞酸乙二酯樹脂等的情況下,其波長為400nm以上且700nm以下的光的反射率的平均值為6%左右。另外,即使第1黑化配線層的波長為400nm以上且700nm以下的光的反射率的平均值為0,例如與聚對酞酸乙二酯樹脂等的透明基材的上述光的反射率的平均值的差也可小至6%左右。為此,第1黑化配線層的波長為400nm以上且700nm以下的光的反射率的平均值例如可為0以上。 In addition, the average value of the reflectance of the light of the first blackened wiring layer having a wavelength of 400 nm or more and 700 nm or less is preferably an average value of the reflectance of light close to the transparent substrate. For this reason, the lower limit value of the average value of the reflectance of the light of the first blackened wiring layer having a wavelength of 400 nm or more and 700 nm or less can be selected according to the transparent substrate used, and is not particularly limited. For example, when a polyethylene terephthalate resin or the like is used as the transparent substrate, the average reflectance of light having a wavelength of 400 nm or more and 700 nm or less is about 6%. In addition, even if the average value of the reflectance of light having a wavelength of 400 nm or more and 700 nm or less of the first blackened wiring layer is 0, for example, the reflectance of the light with a transparent substrate such as polyethylene terephthalate resin is The difference between the average values can also be as small as about 6%. Therefore, the average value of the reflectance of the first blackened wiring layer having a wavelength of 400 nm or more and 700 nm or less may be, for example, 0 or more.

對第1黑化配線層的光的反射率的測定而言,可藉由向透明導電性基板的第1黑化配線層照射光而進行測定。具體而言,例如,如圖7A所的透明導電性基板70那樣,在透明基材11的一個表面11a上依次積層了第1黑化配線層712和導電配線層711的情況下,為了向第1黑化配線層712照射光,可經由透 明基材11向第1黑化配線層712的表面712a照射光,由此可進行測定。測定時,可使波長為400nm以上且700nm以下的光,例如以波長為1nm的間隔,如上所述照射至透明導電性基板的第1黑化配線層712的表面712a,並將所測定的平均值作為第1黑化配線的波長為400nm以上且700nm以下的光的反射率的平均值。 The measurement of the light reflectance of the first blackened wiring layer can be measured by irradiating the first blackened wiring layer of the transparent conductive substrate with light. Specifically, for example, when the first blackened wiring layer 712 and the conductive wiring layer 711 are sequentially laminated on one surface 11a of the transparent base material 11 as in the case of the transparent conductive substrate 70 shown in FIG. 7A, 1 The blackened wiring layer 712 is irradiated with light, and can be measured by irradiating light to the surface 712a of the first blackened wiring layer 712 through the transparent substrate 11. During the measurement, light having a wavelength of 400 nm or more and 700 nm or less can be irradiated onto the surface 712a of the first blackened wiring layer 712 of the transparent conductive substrate at a wavelength of 1 nm, for example, as described above, and the average value of the measurement is The value is an average value of the reflectance of light having a wavelength of the first blackened wiring of 400 nm or more and 700 nm or less.

需要說明的是,第1黑化配線層如上所述為對第1黑化層進行了圖案化而成的層。為此,也可預先對第1黑化層進行波長為400nm以上且700nm以下的光的反射率的平均值的測定和計算,並將該值作為第1黑化配線層的波長為400nm以上且700nm以下的光的反射率的平均值。 The first blackened wiring layer is a layer obtained by patterning the first blackened layer as described above. Therefore, the first blackened layer may be measured and calculated in advance with an average value of the reflectance of light having a wavelength of 400 nm or more and 700 nm or less, and the value may be used as the first blackened wiring layer with a wavelength of 400 nm or more and The average value of the reflectance of light below 700 nm.

〔實施例〕     [Example]    

以下列舉具體實施例和比較例進行說明,但本發明並不限定於這些實施例。 Specific examples and comparative examples will be described below, but the present invention is not limited to these examples.

〔實驗例1〕     [Experimental Example 1]    

作為實驗例1-1~實驗例1-30,進行了透明導電性基板的製造。實驗例1-4~實驗例1-18為實施例,實驗例1-1~實驗例1-3和實驗例1-19~實驗例1-30為比較例。 As Experimental Examples 1-1 to 1-30, transparent conductive substrates were manufactured. Experimental examples 1-4 to 1-18 are examples, and experimental examples 1-1 to 1-3 and experimental examples 1-19 to 1-30 are comparative examples.

首先,準備了供圖案化步驟使用的、在厚度為50μm的聚對酞酸乙二酯樹脂(PET)膜即透明基材的一個表面上依次進行了第1黑化層、導電層、及第2黑化層的積層的積層體基板。需要說明的是,針對透明基材,按照JIS K 7361-1中規定的方法對全光線透過率進行了評價,其結果為93%。在以下的其他實驗例中,也使用了相同的透明基材。 First, a 50 μm-thick polyethylene terephthalate resin (PET) film, which is a transparent substrate, was prepared for the patterning step. The first blackened layer, the conductive layer, and the first Laminated multilayer substrate of 2 blackened layers. The transparent substrate was evaluated for total light transmittance according to the method specified in JIS K 7361-1, and the result was 93%. In the following other experimental examples, the same transparent substrate was also used.

就第1黑化層而言,厚度為0.03μm,並含有鎳、銅、鎳氧化物、及銅氧化物。 The first blackening layer has a thickness of 0.03 μm and contains nickel, copper, a nickel oxide, and a copper oxide.

作為導電層,使用了厚度為0.5μm的銅層。導電層包括藉由濺射法而形成的導電薄膜層(銅薄膜層)和藉由電鍍法而形成的導電鍍層(銅鍍 層)。以下,在其他的實驗例中也同樣地進行了構成。 As the conductive layer, a copper layer having a thickness of 0.5 μm was used. The conductive layer includes a conductive thin film layer (copper thin film layer) formed by a sputtering method and a conductive plated layer (copper plating layer) formed by a plating method. Hereinafter, the configuration was similarly performed in other experimental examples.

就第2黑化層而言,厚度為0.05μm,並含有鎳、銅、鎳氧化物、及銅氧化物。 The second blackening layer has a thickness of 0.05 μm and contains nickel, copper, a nickel oxide, and a copper oxide.

就第1黑化層和第2黑化層而言,都使用氬氣中添加了氧氣的環境並藉由反應性濺射法進行了成膜。在以下的其他實驗例中也同樣地進行了成膜。 Both the first blackened layer and the second blackened layer were formed into a film by a reactive sputtering method using an environment in which oxygen was added to argon. Film formation was performed similarly in other experimental examples below.

準備了就第1黑化層和第2黑化層而言相同積層體基板具有相同的組成,並且,第1黑化層表面的反射率位於12%~16%之間的3種不同的積層體基板。 For the first blackened layer and the second blackened layer, the same laminated body substrate has the same composition, and three different laminated layers with a reflectance of 12% to 16% on the surface of the first blackened layer are prepared. Body substrate.

需要說明的是,就第1黑化層表面的光反射率的測定而言,藉由在紫外可視分光光度計(島津製作所股份有限公司製,型號:UV-2550)上設置反射率測定單元而進行了測定。 In addition, the measurement of the light reflectance on the surface of the first blackened layer is provided by a reflectance measuring unit provided on an ultraviolet visible spectrophotometer (manufactured by Shimadzu Corporation, model: UV-2550). Measurements were performed.

經由所製作的積層體基板的透明基材,向第1黑化層表面,在入射角為5°且受光角為5°的條件下,以波長為1nm的間隔,照射波長為400nm以上且700nm以下的光,並對正反射率進行了測定,然後將其平均值作為反射率。在以下的其他實驗例中也同樣地對反射率進行了測定。以下,也將第1黑化層表面的波長為400nm以上且700nm以下的光的反射率的平均值僅記為“第1黑化層表面的反射率”。此外,表中還存在僅記為“反射率”的情況。 Via the transparent substrate of the laminated substrate produced, the first blackened layer surface was irradiated with a wavelength of 400 nm or more and a wavelength of 700 nm at intervals of 1 nm under conditions of an incident angle of 5 ° and a light reception angle of 5 ° The following light was measured for the normal reflectance, and the average value was used as the reflectance. The reflectance was measured similarly in other experimental examples below. Hereinafter, the average value of the reflectance of light with a wavelength of 400 nm or more and 700 nm or less on the surface of the first blackened layer is also simply referred to as "the reflectance of the surface of the first blackened layer". In addition, there are cases in the table where only "reflectance" is described.

此外,第1黑化層表面的光反射率為12%~16%的情況下的第1黑化層和第2黑化層所含的鎳成分中的、金屬鎳、及氧化鎳或氫氧化鎳的含有比例示於表1。就表1所示的反射率為12%和16%的值而言,是根據反射率為14%的情況下的XPS(X-ray Photoelectron Spectroscopy)的分析結果,並考慮了第1黑化層和第2黑化層的成膜時的氧氣供給量而計算出的值。 In addition, when the light reflectance on the surface of the first blackened layer is 12% to 16%, among the nickel components contained in the first blackened layer and the second blackened layer, metallic nickel, nickel oxide, or hydroxide The content ratio of nickel is shown in Table 1. The values of 12% and 16% reflectance shown in Table 1 are based on the analysis results of XPS (X-ray Photoelectron Spectroscopy) when the reflectance is 14%, and the first blackening layer is considered. And the amount of oxygen supplied during film formation of the second blackened layer.

表1中,例如反射率為12%的情況是指,就第1黑化層和第2黑化 層而言,鎳成分中,50.5質量%以金屬鎳的形態存在,49.5質量%以氧化鎳的形態(視情況還會以氫氧化鎳的形態)存在。 In Table 1, for example, the case where the reflectance is 12% means that, for the first blackened layer and the second blackened layer, 50.5% by mass of the nickel component is in the form of metallic nickel, and 49.5% by mass is nickel oxide. (In the form of nickel hydroxide, if applicable).

將所準備的積層體基板切斷為任意尺寸之後,實施了阻劑配置步驟。具體而言,在第2黑化層的表面上採用層壓法貼附感光性阻劑(旭化成股份有限公司製,品名:AQ-1F59),由此形成了感光性阻劑層(感光性阻劑層形成階段)。之後,藉由向感光性阻劑層進行紫外線曝光,並對未曝光部分進行顯影,形成了網格圖案的阻劑圖案(阻劑圖案形成階段)。需要說明的是,就阻劑圖案而言,相鄰的線的間隔為0.1mm,線的寬度(阻劑寬度)為13μm。 After the prepared multilayer substrate was cut to an arbitrary size, a resist placement step was performed. Specifically, a photosensitive resist (manufactured by Asahi Kasei Corporation, product name: AQ-1F59) was attached to the surface of the second blackening layer by a lamination method, thereby forming a photosensitive resist layer (photosensitive resist Agent layer formation stage). Thereafter, by exposing the photosensitive resist layer to ultraviolet light and developing the unexposed portion, a resist pattern in a grid pattern was formed (resistor pattern formation stage). In addition, in the resist pattern, the interval between adjacent lines was 0.1 mm, and the width of the lines (resistor width) was 13 μm.

針對在第2黑化層的表面上形成了阻劑圖案的積層體基板,實施了以下的圖案化步驟。需要說明的是,在各步驟之間還對積層體基板進行了清洗。 The following patterning step was performed with respect to a multilayer substrate in which a resist pattern was formed on the surface of the second blackening layer. In addition, the laminated body substrate was also cleaned between each step.

作為第1蝕刻液,準備了濃度為25質量%且溫度為30℃的氯化鐵溶液。接下來,將所準備的積層體基板浸漬在第1蝕刻液中10秒,由此進行了導電層和第2黑化層的蝕刻(導電層蝕刻階段)。 As the first etching solution, a ferric chloride solution having a concentration of 25% by mass and a temperature of 30 ° C was prepared. Next, the prepared multilayer substrate was immersed in the first etching solution for 10 seconds, and thus the conductive layer and the second blackened layer were etched (conductive layer etching stage).

之後,作為第2蝕刻液,為各實驗例準備了表2所示的、濃度為5質量%~37質量%的鹽酸水溶液、濃度為10質量%和35質量%的硝酸水溶液、或濃度為10質量%和30質量%的硫酸水溶液。需要說明的是,在室溫(25℃)下 使用了第2蝕刻液。就第2蝕刻液而言,無論哪種的銅離子濃度和鐵離子濃度都為0。 Thereafter, as the second etching solution, an aqueous hydrochloric acid solution having a concentration of 5% to 37% by mass, an aqueous solution of nitric acid having a concentration of 10% to 35% by mass, or a concentration of 10% as shown in Table 2 was prepared for each experimental example. A mass% and a 30 mass% sulfuric acid aqueous solution. The second etching solution was used at room temperature (25 ° C). In the second etching solution, the copper ion concentration and the iron ion concentration were both zero.

接下來,將導電層蝕刻階段結束後的積層體基板浸漬於各實驗例的第2蝕刻液,並對至第1黑化層進行了溶解、膜上無殘渣、且目視為透明為止的時間進行了測定。評價結果示於表2。 Next, the laminated substrate after the conductive layer etching stage was immersed in the second etching solution of each experimental example, and the time until the first blackened layer was dissolved, there was no residue on the film, and it was considered to be transparent was performed. Was measured. The evaluation results are shown in Table 2.

〔表2〕 〔Table 2〕

由表2所示的結果可確認到,藉由使用含有氯化物離子和水、且氯化物離子濃度以鹽酸換算計為10質量%以上的鹽酸水溶液作為第2蝕刻液,能以短於 (小於)180秒的時間對第1黑化層進行蝕刻。即,確認到了,可抑制在透明基材上出現第1黑化層的殘渣,並可將第1黑化層、導電層、及第2黑化層圖案化為期望形狀。 From the results shown in Table 2, it was confirmed that, by using a hydrochloric acid aqueous solution containing chloride ions and water and having a chloride ion concentration of 10% by mass or more in terms of hydrochloric acid as the second etching solution, it was possible to reduce ) The first blackened layer is etched for 180 seconds. That is, it was confirmed that the residue of the first blackened layer on the transparent substrate can be suppressed, and the first blackened layer, the conductive layer, and the second blackened layer can be patterned into a desired shape.

需要說明的是,針對所獲得的透明導電性基板,採用SEM(掃描型電子顯微鏡,日本電子股份有限公司製,型號:JSM-6360LV)進行了觀察,由此可確認到,無論在實驗例1-4~實驗例1-18的哪個中,第1黑化配線層的從導電配線層伸出的伸出寬度都為0.5μm以下。 It should be noted that the obtained transparent conductive substrate was observed with an SEM (Scanning Electron Microscope, manufactured by Japan Electronics Co., Ltd., Model: JSM-6360LV), and it was confirmed that no matter in Experimental Example 1 -4 ~ In any of Experimental Examples 1-18, the protrusion width of the first blackened wiring layer from the conductive wiring layer was all 0.5 μm or less.

另一方面,在作為第2蝕刻液使用了不含氯化物離子的硝酸和/或硫酸的水溶液的情況下,可確認到,即使超過了180秒,也無法完全對第1黑化層進行蝕刻,在透明基材上出現了第1黑化層的殘渣。 On the other hand, when an aqueous solution of nitric acid and / or sulfuric acid containing no chloride ion was used as the second etching solution, it was confirmed that the first blackened layer could not be completely etched even if it exceeded 180 seconds. The residue of the first blackened layer appeared on the transparent substrate.

〔實驗例2〕     [Experimental Example 2]    

作為實驗例2-1~實驗例2-6,製造了透明導電性基板,並對第2蝕刻液中的銅離子濃度的影響進行了研究。實驗例2-1~實驗例2-6都為實施例。 As Experimental Examples 2-1 to 2-6, transparent conductive substrates were manufactured, and the influence of the copper ion concentration in the second etching solution was studied. Experimental examples 2-1 to 2-6 are examples.

首先,準備了供圖案化步驟使用的、在厚度為50μm的聚對酞酸乙二酯樹脂(PET)膜即透明基材的一個表面上依次進行了第1黑化層、導電層、及第2黑化層的積層的積層體基板。 First, a 50 μm-thick polyethylene terephthalate resin (PET) film, which is a transparent substrate, was prepared for the patterning step. The first blackened layer, the conductive layer, and the first Laminated multilayer substrate of 2 blackened layers.

就第1黑化層而言,厚度為0.03μm,並含有鎳、銅、鎳氧化物、及銅氧化物。 The first blackening layer has a thickness of 0.03 μm and contains nickel, copper, a nickel oxide, and a copper oxide.

作為導電層,使用了與實驗例1時同樣構成的厚度為0.5μm的銅層。 As the conductive layer, a copper layer having a thickness of 0.5 μm, which was configured in the same manner as in Experimental Example 1, was used.

就第2黑化層而言,厚度為0.05μm,並含有鎳、銅、鎳氧化物、及和銅氧化物。 The second blackening layer has a thickness of 0.05 μm and contains nickel, copper, nickel oxide, and copper oxide.

準備了第1黑化層和第2黑化層具有相同的組成且第1黑化層表面的反射率為14%的積層體基板。需要說明的是,第1黑化層和第2黑化層與實驗例1-5的情況下的組成相同。 A multilayer substrate was prepared in which the first blackened layer and the second blackened layer had the same composition and the reflectance on the surface of the first blackened layer was 14%. It should be noted that the composition of the first blackened layer and the second blackened layer is the same as in the case of Experimental Example 1-5.

將所準備的積層體基板切斷為任意尺寸之後,實施了阻劑配置步驟。具體而言,在第2黑化層的表面上採用層壓法貼附了感光性阻劑(旭化成股份有限公司製,品名:AQ-1F59),由此形成了感光性阻劑層(感光性阻劑層形成階段)。然後,藉由對感光性阻劑層進行紫外線曝光,並對未曝光部分進行顯影,形成了網格圖案的阻劑圖案(阻劑圖案形成階段)。需要說明的是,就阻劑圖案而言,相鄰的線的間隔為0.1mm,線的寬度(阻劑寬度)為13μm。 After the prepared multilayer substrate was cut to an arbitrary size, a resist placement step was performed. Specifically, a photosensitive resist (manufactured by Asahi Kasei Corporation, product name: AQ-1F59) was attached to the surface of the second blackened layer by a lamination method, thereby forming a photosensitive resist layer (photosensitive Resist layer formation stage). Then, by exposing the photosensitive resist layer to ultraviolet rays and developing the unexposed portions, a resist pattern in a grid pattern is formed (resistor pattern formation stage). In addition, in the resist pattern, the interval between adjacent lines was 0.1 mm, and the width of the lines (resistor width) was 13 μm.

針對在第2黑化層的表面上形成了阻劑圖案的積層體基板,實施了以下的圖案化步驟。在各步驟之間還對積層體基板進行了清洗。 The following patterning step was performed with respect to a multilayer substrate in which a resist pattern was formed on the surface of the second blackening layer. The multilayer substrate was also cleaned between steps.

作為第2蝕刻液,準備了鹽酸濃度為25質量%且溫度為室溫(25℃)的鹽酸水溶液。需要說明的是,對第2蝕刻液進行製備時,藉由在上述濃度的鹽酸中添加氯化銅,對各實驗例進行了調整,以使第2蝕刻液中的銅離子濃度為表3所示的值。本實驗例中使用的第2蝕刻液的鐵離子濃度都為0。 As the second etching solution, an aqueous hydrochloric acid solution having a hydrochloric acid concentration of 25% by mass and a temperature of room temperature (25 ° C) was prepared. In addition, when the second etching solution was prepared, copper chloride was added to the above-mentioned concentration of hydrochloric acid to adjust each experimental example so that the copper ion concentration in the second etching solution was as shown in Table 3. Shown value. The iron ion concentration of the second etching solution used in this experimental example was all zero.

接下來,將積層體基板浸漬在第2蝕刻液中30秒,由此對第2黑化層進行了蝕刻(第2黑化層蝕刻階段)。 Next, the second blackened layer was etched by immersing the multilayer substrate in a second etching solution for 30 seconds (second blackened layer etching step).

之後,作為第1蝕刻液,準備了濃度為25質量%且溫度為30℃的氯化鐵溶液。然後,將第2黑化層蝕刻階段結束後的積層體基板浸漬在第1蝕刻液中10秒,藉此進行了導電層的蝕刻(導電層蝕刻階段)。 Thereafter, as a first etching solution, a ferric chloride solution having a concentration of 25% by mass and a temperature of 30 ° C was prepared. Then, the laminated body substrate after the end of the second blackening layer etching step was immersed in the first etching solution for 10 seconds, thereby etching the conductive layer (conductive layer etching step).

接下來,使用各實驗例中對第2黑化層進行蝕刻時所用的第2蝕刻液,進行了第1黑化層的蝕刻(第1黑化層蝕刻階段)。 Next, the first blackened layer was etched using the second etchant used when the second blackened layer was etched in each experimental example (first blackened layer etching step).

之後,浸漬在濃度為5質量%且溫度為40℃的氫氧化鈉水溶液中60秒,使阻劑圖案膨潤、剝離並進行除去之後,進行了清洗和乾燥,由此獲得了透明導電性基板。 Thereafter, the transparent conductive substrate was obtained by immersing in a sodium hydroxide aqueous solution having a concentration of 5% by mass and a temperature of 40 ° C. for 60 seconds to swell, peel, and remove the resist pattern, followed by washing and drying.

無論在哪個實驗例中,透明基材上都沒有發生第1黑化層的殘 渣。 In any of the experimental examples, no residue of the first blackened layer occurred on the transparent substrate.

針對所獲得的透明導電性基板,對導電配線層的外觀進行了觀察,並藉由目視,對導電配線層是否被侵蝕了進行了確認。評價結果示於表3。 With respect to the obtained transparent conductive substrate, the appearance of the conductive wiring layer was observed, and whether the conductive wiring layer was corroded was visually confirmed. The evaluation results are shown in Table 3.

表3中,在正常地形成了配線的情況下,評價為A,在能看到配線的一部分變細的情況下,評價為B。 In Table 3, when the wiring was formed normally, it was evaluated as A, and when a part of the wiring was seen to be thin, it was evaluated as B.

無論在實驗例2-1~實驗例2-6的哪個中,都確認到了,可將第1黑化層、導電層、及第2黑化層圖案化為期望形狀。然而,根據表3所示的結果也可確認到,就在第2蝕刻液中的銅離子濃度為0.5質量%左右的條件下所獲得的配線即導電配線層的一部分而言,可看到其變細了一些。由以上的結果可確認到,第2蝕刻液內的銅離子濃度優選為小於0.5質量%,較佳為0.4質量%以下。 In any of Experimental Examples 2-1 to 2-6, it was confirmed that the first blackened layer, the conductive layer, and the second blackened layer can be patterned into a desired shape. However, it is also confirmed from the results shown in Table 3 that the conductive wiring layer, which is a part of the wiring obtained under the condition that the copper ion concentration in the second etching solution is about 0.5% by mass, can be seen. Thinner. From the above results, it was confirmed that the copper ion concentration in the second etching solution is preferably less than 0.5% by mass, and more preferably 0.4% by mass or less.

需要說明的是,對所獲得的透明導電性基板採用SEM進行了觀察,由此可確認到,無論在實驗例2-1~實驗例2-6的哪個中,第1黑化配線 層的從導電配線層伸出的伸出寬度都為0.5μm以下。 It should be noted that the obtained transparent conductive substrate was observed with SEM. From this, it was confirmed that in any of Experimental Example 2-1 to Experimental Example 2-6, the slave layer of the first blackened wiring layer was observed. The protruding width of each of the conductive wiring layers is 0.5 μm or less.

〔實驗例3〕     [Experimental Example 3]    

作為實驗例3-1~實驗例3-7,製造了透明導電性基板,並對第2蝕刻液中的鐵離子濃度的影響進行了研究。實驗例3-1~實驗例3-7都為實施例。 As Experimental Examples 3-1 to 3-7, transparent conductive substrates were manufactured, and the influence of the iron ion concentration in the second etching solution was examined. Experimental examples 3-1 to 3-7 are examples.

首先,準備了供圖案化步驟使用的、在厚度為50μm的聚對酞酸乙二酯樹脂(PET)膜即透明基材的一個表面上依次對第1黑化層、導電層、及第2黑化層進行了積層的積層體基板。 First, the first blackening layer, the conductive layer, and the second A multilayer substrate in which a blackened layer is laminated.

就第1黑化層而言,厚度為0.03μm,並含有鎳、銅、鎳氧化物、及銅氧化物。 The first blackening layer has a thickness of 0.03 μm and contains nickel, copper, a nickel oxide, and a copper oxide.

作為導電層,使用了與實驗例1時同樣構成的厚度為0.5μm的銅層。 As the conductive layer, a copper layer having a thickness of 0.5 μm, which was configured in the same manner as in Experimental Example 1, was used.

就第2黑化層而言,厚度為0.05μm,並含有鎳、銅、鎳氧化物、及銅氧化物。 The second blackening layer has a thickness of 0.05 μm and contains nickel, copper, a nickel oxide, and a copper oxide.

準備了第1黑化層和第2黑化層具有相同組成且第1黑化層表面的反射率為14%的積層體基板。需要說明的是,第1黑化層和第2黑化層與實驗例1-5的情況下的組成相同。 A multilayer substrate was prepared in which the first blackened layer and the second blackened layer had the same composition and the reflectance on the surface of the first blackened layer was 14%. It should be noted that the composition of the first blackened layer and the second blackened layer is the same as in the case of Experimental Example 1-5.

將所準備的積層體基板切斷為任意尺寸之後,實施了阻劑配置步驟。具體而言,在第2黑化層的表面上採用層壓法貼附了感光性阻劑(旭化成股份有限公司製,品名:AQ-1F59),由此形成了感光性阻劑層(感光性阻劑層形成階段)。接下來,藉由對感光性阻劑層進行紫外線曝光,並對未曝光部分進行顯影,形成了網格圖案的阻劑圖案(阻劑圖案形成階段)。需要說明的是,就阻劑圖案而言,相鄰的線的間隔為0.1mm,線的寬度(阻劑寬度)為13μm。 After the prepared multilayer substrate was cut to an arbitrary size, a resist placement step was performed. Specifically, a photosensitive resist (manufactured by Asahi Kasei Corporation, product name: AQ-1F59) was attached to the surface of the second blackened layer by a lamination method, thereby forming a photosensitive resist layer (photosensitive Resist layer formation stage). Next, by exposing the photosensitive resist layer to ultraviolet rays and developing the unexposed portions, a resist pattern of a grid pattern was formed (resistor pattern formation stage). In addition, in the resist pattern, the interval between adjacent lines was 0.1 mm, and the width of the lines (resistor width) was 13 μm.

針對在第2黑化層的表面上形成了阻劑圖案的積層體基板,實施 了以下的圖案化步驟。各步驟之間還進行了積層體基板的清洗。 The following patterning step was performed on a multilayer substrate in which a resist pattern was formed on the surface of the second blackening layer. Laminate substrate cleaning was also performed between each step.

作為第2蝕刻液,準備了鹽酸濃度為25質量%且溫度為室溫(25℃)的鹽酸水溶液。需要說明的是,對第2蝕刻液進行製備時,藉由在上述濃度的鹽酸中添加氯化鐵,在0~0.3質量%的範圍對各實驗例進行了調整,以使第2蝕刻液中的鐵離子濃度為表4所示的值。本實驗例中使用的第2蝕刻液的銅離子濃度都為0。 As the second etching solution, an aqueous hydrochloric acid solution having a hydrochloric acid concentration of 25% by mass and a temperature of room temperature (25 ° C) was prepared. It should be noted that, when the second etching solution was prepared, ferric chloride was added to the above-mentioned concentration of hydrochloric acid, and each experimental example was adjusted in a range of 0 to 0.3% by mass to make the second etching solution The iron ion concentration is the value shown in Table 4. The copper ion concentration of the second etching solution used in this experimental example was all zero.

接下來,將積層體基板浸漬在第2蝕刻液中30秒,由此對第2黑化層進行了蝕刻(第2黑化層蝕刻階段)。 Next, the second blackened layer was etched by immersing the multilayer substrate in a second etching solution for 30 seconds (second blackened layer etching step).

之後,作為第1蝕刻液,準備了濃度為25質量%且溫度為30℃的氯化鐵溶液。然後,將第2黑化層蝕刻階段結束後的積層體基板浸漬在第1蝕刻液中10秒,由此進行了導電層的蝕刻(導電層蝕刻階段)。 Thereafter, as a first etching solution, a ferric chloride solution having a concentration of 25% by mass and a temperature of 30 ° C was prepared. Then, the laminated body substrate after the end of the second blackening layer etching step was immersed in the first etching solution for 10 seconds, thereby etching the conductive layer (conductive layer etching step).

接下來,使用在各實驗例中對第2黑化層進行蝕刻時所用的第2蝕刻液,進行了第1黑化層的蝕刻(第1黑化層蝕刻階段)。 Next, the first blackened layer was etched using the second etchant used when the second blackened layer was etched in each experimental example (first blackened layer etching step).

之後,浸漬在濃度為5質量%且溫度為40℃的氫氧化鈉水溶液中60秒,使阻劑圖案膨潤、剝離並進行除去之後,進行了清洗和乾燥,由此獲得了透明導電性基板。 Thereafter, the transparent conductive substrate was obtained by immersing in a sodium hydroxide aqueous solution having a concentration of 5% by mass and a temperature of 40 ° C. for 60 seconds to swell, peel, and remove the resist pattern, followed by washing and drying.

無論在哪個實驗例中,透明基材上都沒有出現第1黑化層的殘渣。 In any of the experimental examples, no residue of the first blackened layer appeared on the transparent substrate.

針對所獲得的透明導電性基板,對導電配線層的外觀進行了觀察,並藉由目視,對導電配線層是否被侵蝕了進行了確認。評價結果示於表4。 With respect to the obtained transparent conductive substrate, the appearance of the conductive wiring layer was observed, and whether the conductive wiring layer was corroded was visually confirmed. The evaluation results are shown in Table 4.

表4中,在正常地形成了配線的情況下,評價為A,在能看到配線的一部分變細了的情況下,評價為B。 In Table 4, when the wiring was formed normally, it was evaluated as A, and when a part of the wiring was seen to be thin, it was evaluated as B.

〔表4〕 〔Table 4〕

可確認到,無論在實驗例3-1~實驗例3-7的哪個中,都可將第1黑化層、導電層、及第2黑化層圖案化為期望形狀。然而,根據表4所示的結果也可確認到,就在第2蝕刻液中的鐵離子濃度為0.30質量%左右的條件下所獲得的配線即導電配線層的一部分而言,可看到其變細了一些。由以上的結果可確認到,第2蝕刻液內的鐵離子濃度優選為小於0.30質量%,較佳為0.20質量%以下。 It was confirmed that the first blackened layer, the conductive layer, and the second blackened layer can be patterned into a desired shape in any of Experimental Examples 3-1 to 3-7. However, it is also confirmed from the results shown in Table 4 that a part of the conductive wiring layer which is a wiring obtained under the condition that the iron ion concentration in the second etching solution is about 0.30% by mass can be seen. Thinner. From the above results, it was confirmed that the iron ion concentration in the second etching solution is preferably less than 0.30% by mass, and more preferably 0.20% by mass or less.

需要說明的是,對所獲得的透明導電性基板採用SEM進行了觀察,由此可確認到,無論在實驗例3-1~實驗例3-7的哪個中,第1黑化配線層的從導電配線層伸出的伸出寬度都為0.5μm以下。 It should be noted that the obtained transparent conductive substrate was observed with an SEM, and it was confirmed that, in any of Experimental Examples 3-1 to 3-7, the slave layer of the first blackened wiring layer was observed. The protruding width of each of the conductive wiring layers is 0.5 μm or less.

〔實驗例4〕     [Experimental Example 4]    

作為實驗例4-1和實驗例4-2,製造了透明導電性基板。實驗例4-1和實驗例4-2都為實施例。 As Experimental Example 4-1 and Experimental Example 4-2, a transparent conductive substrate was manufactured. Both Experimental Example 4-1 and Experimental Example 4-2 are examples.

首先,準備了供圖案化步驟使用的、在厚度為50μm的聚對酞酸乙二酯樹脂(PET)膜即透明基材的一個表面上依次對第1黑化層、導電層、及第2黑化層進行了積層的積層體基板。 First, the first blackening layer, the conductive layer, and the second A multilayer substrate in which a blackened layer is laminated.

就第1黑化層而言,厚度為0.03μm,並含有鎳、銅、鎳氧化物、及銅氧化物。 The first blackening layer has a thickness of 0.03 μm and contains nickel, copper, a nickel oxide, and a copper oxide.

作為導電層,使用了與實驗例1時同樣構成的厚度為0.5μm的銅層。 As the conductive layer, a copper layer having a thickness of 0.5 μm, which was configured in the same manner as in Experimental Example 1, was used.

就第2黑化層而言,厚度為0.05μm,並含有鎳、銅、鎳氧化物、及銅氧化物。 The second blackening layer has a thickness of 0.05 μm and contains nickel, copper, a nickel oxide, and a copper oxide.

準備了第1黑化層和第2黑化層具有相同的組成且第1黑化層表面的反射率為14%的積層體基板。需要說明的是,第1黑化層和第2黑化層與實驗例1-5的情況下的組成相同。 A multilayer substrate was prepared in which the first blackened layer and the second blackened layer had the same composition and the reflectance on the surface of the first blackened layer was 14%. It should be noted that the composition of the first blackened layer and the second blackened layer is the same as in the case of Experimental Example 1-5.

之後,實施了阻劑配置步驟。具體而言,在第2黑化層的表面上採用層壓法貼附了感光性阻劑(旭化成股份有限公司製,品名:AQ-1F59),由此形成了感光性阻劑層(感光性阻劑層形成階段)。 After that, a resist placement step was performed. Specifically, a photosensitive resist (manufactured by Asahi Kasei Corporation, product name: AQ-1F59) was attached to the surface of the second blackened layer by a lamination method, thereby forming a photosensitive resist layer (photosensitive Resist layer formation stage).

接下來,經由特定圖案的玻璃掩膜對感光性阻劑層進行紫外線曝光。就此時所使用的玻璃掩膜而言,使用了顯影後的阻劑寬度為13μm且可形成邊長為100μm的格子狀圖案的玻璃掩膜。 Next, the photosensitive resist layer is exposed to ultraviolet rays through a glass mask of a specific pattern. For the glass mask used at this time, a glass mask having a resist width of 13 μm after development and a grid pattern having a side length of 100 μm was used.

之後,藉由浸漬在1質量%且30℃的碳酸鈉水溶液中60秒,對未曝光部分進行了顯影,由此形成了阻劑圖案(阻劑圖案形成階段)。 Thereafter, the unexposed portion was developed by being immersed in a 1% by mass sodium carbonate aqueous solution at 30 ° C. for 60 seconds, thereby forming a resist pattern (resist pattern formation stage).

針對在第2黑化層的表面上形成了阻劑圖案的積層體基板,實施了以下的圖案化步驟。需要說明的是,圖案化步驟中,在各步驟之間還進行了積層體基板的清洗。 The following patterning step was performed with respect to a multilayer substrate in which a resist pattern was formed on the surface of the second blackening layer. It should be noted that, in the patterning step, the laminate substrate was also cleaned between the steps.

作為第1蝕刻液,準備了濃度為25質量%且溫度為30℃的氯化鐵 溶液。然後,將所準備的積層體基板浸漬在第1蝕刻液中10秒,由此進行了導電層和第2黑化層的蝕刻(導電層蝕刻階段)。 As the first etching solution, a ferric chloride solution having a concentration of 25% by mass and a temperature of 30C was prepared. Then, the prepared multilayer substrate was immersed in the first etching solution for 10 seconds, and thus the conductive layer and the second blackened layer were etched (conductive layer etching stage).

接下來,作為第2蝕刻液,為各實驗例準備了表5所示的濃度為20質量%(實驗例4-1)或30質量%(實驗例4-2)的鹽酸水溶液。需要說明的是,在室溫(25℃)下使用了第2蝕刻液。不論何種第2蝕刻液,其銅離子濃度和鐵離子濃度都為0。 Next, as the second etching solution, an aqueous hydrochloric acid solution having a concentration shown in Table 5 of 20% by mass (Experimental Example 4-1) or 30% by mass (Experimental Example 4-2) was prepared for each experimental example. In addition, the 2nd etching liquid was used at room temperature (25 degreeC). Regardless of the second etching solution, the copper ion concentration and iron ion concentration are both zero.

之後,將導電層蝕刻階段結束後的積層體基板浸漬在各實驗例的第2蝕刻液中45秒(實驗例4-1)或20秒(實驗例4-2),由此進行了第1黑化層的蝕刻(第1黑化層蝕刻階段)。 Thereafter, the laminated body substrate after the conductive layer etching stage was finished was immersed in the second etching solution of each experimental example for 45 seconds (Experimental Example 4-1) or 20 seconds (Experimental Example 4-2). Etching of the blackened layer (first blackened layer etching step).

接下來,浸漬在濃度為5質量%且溫度為40℃的氫氧化鈉水溶液中60秒,使阻劑圖案膨潤、剝離並將其除去之後,進行了清洗和乾燥,由此獲得了透明導電性基板。 Next, after immersing in a sodium hydroxide aqueous solution having a concentration of 5% by mass and a temperature of 40 ° C. for 60 seconds, the resist pattern was swollen, peeled, and removed, and then washed and dried to obtain transparent conductivity. Substrate.

針對所獲得的透明導電性基板,採用光學顯微鏡,對第1黑化層的殘渣的有無進行了觀察。此外,還藉由電子顯微鏡實施了對配線形狀(導電配線層形狀)的觀察和配線寬度(導電配線層寬度)的測定。 The obtained transparent conductive substrate was observed for the presence or absence of the residue of the first blackened layer using an optical microscope. The observation of the wiring shape (the shape of the conductive wiring layer) and the measurement of the wiring width (the width of the conductive wiring layer) were also performed with an electron microscope.

就配線寬度而言,對任意選擇的4個配線的配線寬度進行了測定,並將其平均值作為該透明導電性基板的配線寬度。 With regard to the wiring width, the wiring width of four wirings arbitrarily selected was measured, and the average value was used as the wiring width of the transparent conductive substrate.

評價結果示於表5。此外,圖8示出了實驗例4-1中獲得的包括格子(網格)狀的金屬細線的透明導電性基板的電子顯微鏡照片。 The evaluation results are shown in Table 5. In addition, FIG. 8 shows an electron microscope photograph of a transparent conductive substrate including fine metal wires in a grid (grid) shape obtained in Experimental Example 4-1.

〔表5〕 〔table 5〕

由表5所示的結果可確認到,在實驗例4-1和實驗例4-2中,都不存在第1黑化層的殘渣,並可進行網格配線無剝離和/或欠損的良好的蝕刻。即,確認到了,可將黑化層和導電層圖案化為期望形狀。 From the results shown in Table 5, it can be confirmed that, in Experimental Example 4-1 and Experimental Example 4-2, the residue of the first blackened layer does not exist, and the grid wiring is good without peeling and / or loss. Etching. That is, it was confirmed that the blackened layer and the conductive layer can be patterned into a desired shape.

需要說明的是,對所獲得的透明導電性基板採用SEM進行了觀察,由此可確認到,無論在實驗例4-1和實驗例4-2的哪個中,第1黑化配線層的從導電配線層伸出的伸出寬度都為0.5μm以下。 It should be noted that the obtained transparent conductive substrate was observed with an SEM, and it was confirmed that in any of Experimental Example 4-1 and Experimental Example 4-2, the slave layer of the first blackened wiring layer was observed. The protruding width of each of the conductive wiring layers is 0.5 μm or less.

〔實驗例5〕     [Experimental Example 5]    

作為實驗例5-1和實驗例5-2,製造了透明導電性基板。實驗例5-1和實驗例5-2都為實施例。 As Experimental Example 5-1 and Experimental Example 5-2, a transparent conductive substrate was manufactured. Both Experimental Example 5-1 and Experimental Example 5-2 are examples.

在導電層蝕刻階段中,作為第1蝕刻液,準備了濃度為21質量%且溫度為35℃的氯化銅溶液,將所準備的積層體基板浸漬在第1蝕刻液中45秒,由此進行了導電層和第2黑化層的蝕刻。 In the conductive layer etching step, a copper chloride solution having a concentration of 21% by mass and a temperature of 35 ° C. was prepared as the first etching solution, and the prepared multilayer substrate was immersed in the first etching solution for 45 seconds. The conductive layer and the second blackened layer were etched.

在第1黑化層蝕刻階段中,作為第2蝕刻液,為各實驗例準備了表6所示的鹽酸濃度為20質量%(實驗例5-1)或30質量%(實驗例5-2)的鹽酸水溶液,並且,將浸漬時間設為20秒(實驗例5-1)或10秒(實驗例5-2)。 In the first blackening layer etching stage, as the second etching solution, a hydrochloric acid concentration of 20% by mass (Experimental Example 5-1) or 30% by mass (Experimental Example 5-2) was prepared for each experimental example. ) Hydrochloric acid aqueous solution, and the immersion time was set to 20 seconds (Experimental Example 5-1) or 10 seconds (Experimental Example 5-2).

除了以上這兩點之外與實驗例4時同樣地製造了透明導電性基板,並進行了評價。結果示於表6。 A transparent conductive substrate was produced and evaluated in the same manner as in Experimental Example 4 except for the above two points. The results are shown in Table 6.

需要說明的是,在室溫(25℃)下使用了第2蝕刻液。不論何種第2蝕刻液,其銅離子濃度和鐵離子濃度都為0。 In addition, the 2nd etching liquid was used at room temperature (25 degreeC). Regardless of the second etching solution, the copper ion concentration and iron ion concentration are both zero.

由表6所示的結果可確認到,在實驗例5-1和實驗例5-2中,都不存在第1黑化層的殘渣,並可進行網格配線無剝離和/或欠損的良好的蝕刻。即,確認到了,可將黑化層和導電層圖案化為期望形狀。 From the results shown in Table 6, it can be confirmed that, in Experimental Example 5-1 and Experimental Example 5-2, the residue of the first blackened layer does not exist, and the grid wiring is good without peeling and / or loss. Etching. That is, it was confirmed that the blackened layer and the conductive layer can be patterned into a desired shape.

需要說明的是,對所獲得的透明導電性基板採用SEM進行了觀察,由此可確認到,無論在實驗例5-1和實驗例5-2的哪個中,第1黑化配線層的從導電配線層伸出的伸出寬度都為0.5μm以下。 It should be noted that the obtained transparent conductive substrate was observed with an SEM, and it was confirmed that in any of Experimental Example 5-1 and Experimental Example 5-2, the slave layer of the first blackened wiring layer was observed. The protruding width of each of the conductive wiring layers is 0.5 μm or less.

〔實驗例6〕     [Experimental Example 6]    

製造了透明導電性基板。實驗例6為實施例。 A transparent conductive substrate was manufactured. Experimental Example 6 is an example.

首先,與實驗例4的情況下同樣地,準備了在第2黑化層的表面上形成了阻劑圖案的積層體基板。接下來,針對該積層體基板,實施了以下的圖案化步驟。 First, as in the case of Experimental Example 4, a multilayer substrate in which a resist pattern was formed on the surface of the second blackened layer was prepared. Next, the following patterning steps were performed on the multilayer substrate.

作為第2蝕刻液,準備了濃度為20質量%的鹽酸水溶液。需要說明的是,在室溫(25℃)下使用了第2蝕刻液。第2蝕刻液的銅離子濃度和鐵離子濃度都為0。之後,將所準備的積層體基板浸漬在第2蝕刻液中45秒,由此進 行了第2黑化層的蝕刻(第2黑化層蝕刻階段)。需要說明的是,第2黑化層蝕刻階段之後,進行了清洗。 As the second etching solution, a 20% by mass hydrochloric acid aqueous solution was prepared. In addition, the 2nd etching liquid was used at room temperature (25 degreeC). Both the copper ion concentration and the iron ion concentration of the second etching solution were zero. After that, the prepared multilayer substrate was immersed in the second etching solution for 45 seconds to perform etching of the second blackened layer (second blackened layer etching step). It should be noted that cleaning was performed after the second blackening layer was etched.

作為第1蝕刻液,準備了濃度為25質量%且溫度為30℃的氯化鐵溶液。接下來,將實施了第2黑化層蝕刻階段後的積層體基板浸漬在第1蝕刻液中10秒,由此進行了導電層的蝕刻(導電層蝕刻階段)。需要說明的是,導電層蝕刻階段之後,進行了清洗。 As the first etching solution, a ferric chloride solution having a concentration of 25% by mass and a temperature of 30 ° C was prepared. Next, the laminated body substrate after the second blackened layer etching step was immersed in the first etching solution for 10 seconds, thereby etching the conductive layer (conductive layer etching step). It should be noted that cleaning was performed after the conductive layer was etched.

之後,在第2蝕刻液中,將實施了導電層蝕刻階段後的積層體基板浸漬了45秒,由此進行了第1黑化層的蝕刻(第1黑化層蝕刻階段)。需要說明的是,第1黑化層蝕刻階段之後,進行了清洗。 Thereafter, the laminated body substrate subjected to the conductive layer etching step was immersed in the second etching solution for 45 seconds, whereby the first blackened layer was etched (first blackened layer etching step). It should be noted that cleaning was performed after the first blackened layer was etched.

接下來,浸漬在濃度為5質量%且溫度為40℃的氫氧化鈉水溶液中60秒,使阻劑圖案膨潤、剝離並將其除去之後,進行了清洗和乾燥,由此獲得了透明導電性基板。 Next, after immersing in a sodium hydroxide aqueous solution having a concentration of 5% by mass and a temperature of 40 ° C. for 60 seconds, the resist pattern was swollen, peeled and removed, and then washed and dried to obtain transparent conductivity Substrate.

針對所獲得的透明導電性基板,進行了與實驗例4時同樣的評價。 The obtained transparent conductive substrate was evaluated in the same manner as in Experimental Example 4.

評價結果示於表7。 The evaluation results are shown in Table 7.

由表7所示的結果可確認到,在本實驗例中,也不存在第1黑化層的殘渣,並可進行網格配線無剝離和/或欠損的良好的蝕刻。即,確認到了,可將黑化層和導電層圖案化為期望形狀。 From the results shown in Table 7, it was confirmed that, in this experimental example, no residue of the first blackened layer was present, and good etching of the grid wiring without peeling and / or loss was performed. That is, it was confirmed that the blackened layer and the conductive layer can be patterned into a desired shape.

需要說明的是,對所獲得的透明導電性基板採用SEM進行了觀察,由此可確認到,在實驗例6中,第1黑化配線層的從導電配線層伸出的伸出寬度也為0.5μm以下。 It should be noted that the obtained transparent conductive substrate was observed by SEM, and it was confirmed that in Experimental Example 6, the protruding width of the first blackened wiring layer from the conductive wiring layer was also 0.5 μm or less.

〔實驗例7〕     [Experimental Example 7]    

作為實驗例7-1~實驗例7-6,進行了透明導電性基板的製造。實驗例7-1~實驗例7-3為實施例,實驗例7-4~實驗例7-6為比較例。 As Experimental Examples 7-1 to 7-6, transparent conductive substrates were manufactured. Experimental examples 7-1 to 7-3 are examples, and experimental examples 7-4 to 7-6 are comparative examples.

首先,除了對黑化層的成膜條件進行調整以使第1黑化層和第2黑化層的膜厚、以及第1黑化層表面的反射率為期望之值這點之外,與實驗例1時同樣地準備了供圖案化步驟使用的、在厚度為50μm的聚對酞酸乙二酯樹脂(PET)膜即透明基材的一個表面上依次對第1黑化層、導電層、及第2黑化層進行了積層的積層體基板。 First, except that the film formation conditions of the blackened layer are adjusted so that the film thicknesses of the first blackened layer and the second blackened layer, and the reflectance of the surface of the first blackened layer are desired values, In Experimental Example 1, the first blackened layer and the conductive layer were sequentially prepared on the one surface of a transparent substrate, namely, a polyethylene terephthalate resin (PET) film having a thickness of 50 μm, for the patterning step. And a second blackened layer on which a laminated body substrate is laminated.

就第1黑化層而言,厚度為0.02μm,並含有鎳、銅、鎳氧化物、及銅氧化物。 The first blackening layer has a thickness of 0.02 μm and contains nickel, copper, a nickel oxide, and a copper oxide.

作為導電層,使用了厚度為0.5μm的銅層。導電層包括藉由濺射法而形成的導電薄膜層(銅薄膜層)和藉由電鍍法而形成的導電鍍層(銅鍍層)。 As the conductive layer, a copper layer having a thickness of 0.5 μm was used. The conductive layer includes a conductive thin film layer (copper thin film layer) formed by a sputtering method and a conductive plating layer (copper plating layer) formed by a plating method.

就第2黑化層而言,厚度為0.02μm,並含有鎳、銅、鎳氧化物、及銅氧化物。 The second blackening layer has a thickness of 0.02 μm and contains nickel, copper, a nickel oxide, and a copper oxide.

就第1黑化層和第2黑化層而言,都使用在氬氣中添加了氧氣的環境並藉由反應性濺射法進行了成膜。 Both the first blackened layer and the second blackened layer were formed using an environment in which oxygen was added to argon, and were formed by a reactive sputtering method.

準備了就第1黑化層和第2黑化層而言相同積層體基板具有相同的組成,並且,第1黑化層表面的反射率為10%、14%、及20%的3種不同的積層體基板。需要說明的是,如表8所示,在實驗例7-1和實驗例7-4中使用了第1黑化層表面的反射率為10%的積層體基板,在實驗例7-2和實驗例7-5中使 用了第1黑化層表面的反射率為14%的積層體基板,在實驗例7-3和實驗例7-6中使用了第1黑化層表面的反射率為20%的積層體基板。 For the first blackened layer and the second blackened layer, the same multilayer substrate was prepared with the same composition, and the reflectance of the surface of the first blackened layer was 10%, 14%, and 20%. Laminated substrate. It should be noted that, as shown in Table 8, in Example 7-1 and Example 7-4, a multilayer substrate having a reflectance of 10% on the surface of the first blackened layer was used. In Examples 7-2 and In Experimental Example 7-5, a multilayer substrate having a reflectance of 14% on the surface of the first blackened layer was used. In Experimental Examples 7-3 and 7-6, the reflectance of the surface of the first blackened layer was used. 20% laminate substrate.

就第1黑化層和第2黑化層而言,在各實驗例中,為了使第1黑化層表面的反射率為上述值,根據預先進行了的試驗,對成膜條件,具體而言,對施加至鎳-銅合金鈀的電壓和環境進行了調整,並進行了成膜。 For each of the first blackened layer and the second blackened layer, in order to make the surface reflectance of the first blackened layer to the above-mentioned value in each experimental example, the film formation conditions were specifically determined based on a test performed in advance. In other words, the voltage and the environment applied to the nickel-copper alloy palladium were adjusted, and a film was formed.

第1黑化層表面的反射率是指,如上所述第1黑化層表面的波長為400nm以上且700nm以下的光的反射率的平均值。 The reflectance on the surface of the first blackened layer refers to the average value of the reflectance of light having a wavelength of 400 nm or more and 700 nm or less on the surface of the first blackened layer, as described above.

將所準備的積層體基板切斷為任意尺寸之後,實施了阻劑配置步驟。具體而言,在第2黑化層的表面上採用層壓法貼附了乾膜阻劑(旭化成股份有限公司製,品名:ATP-053),由此形成了感光性阻劑層(感光性阻劑層形成階段)。接下來,藉由對感光性阻劑層進行紫外線曝光,並對未曝光部分進行顯影,形成了具有互相平行的複數個直線形狀的阻劑圖案(阻劑圖案形成階段)。需要說明的是,就阻劑圖案而言,相鄰的線的間隔為0.1mm,線的寬度(阻劑寬度)為16μm。 After the prepared multilayer substrate was cut to an arbitrary size, a resist placement step was performed. Specifically, a dry film resist (manufactured by Asahi Kasei Co., Ltd., product name: ATP-053) was attached to the surface of the second blackened layer by a lamination method, thereby forming a photosensitive resist layer (photosensitive Resist layer formation stage). Next, by exposing the photosensitive resist layer to ultraviolet rays and developing the unexposed portions, a resist pattern having a plurality of linear shapes parallel to each other is formed (resistor pattern forming stage). In addition, in the resist pattern, the interval between adjacent lines was 0.1 mm, and the width of the lines (resistor width) was 16 μm.

針對在第2黑化層的表面上形成了阻劑圖案的積層體基板,實施了以下的圖案化步驟。需要說明的是,在各步驟之間對積層體基板進行了清洗。 The following patterning step was performed with respect to a multilayer substrate in which a resist pattern was formed on the surface of the second blackening layer. In addition, the laminated body substrate was cleaned between each step.

實驗例7-1~實驗例7-3中,在以下的條件下實施了圖案化步驟。 In Experimental Examples 7-1 to 7-3, a patterning step was performed under the following conditions.

作為第1蝕刻液,準備了濃度為25質量%且溫度為30℃的氯化鐵溶液。接下來,將所準備的積層體基板浸漬在第1蝕刻液中10秒,由此進行了導電層和第2黑化層的蝕刻(導電層蝕刻階段)。 As the first etching solution, a ferric chloride solution having a concentration of 25% by mass and a temperature of 30 ° C was prepared. Next, the prepared multilayer substrate was immersed in the first etching solution for 10 seconds, and thus the conductive layer and the second blackened layer were etched (conductive layer etching stage).

之後,作為第2蝕刻液,準備了濃度為25質量%且溫度為30℃的鹽酸水溶液。然後,將所準備的積層體基板浸漬在第2蝕刻液中20秒,由此進 行了第1黑化層的蝕刻(第1黑化層蝕刻階段)。第2蝕刻液的銅離子濃度和鐵離子濃度都為0。 Thereafter, as a second etching solution, an aqueous hydrochloric acid solution having a concentration of 25% by mass and a temperature of 30 ° C was prepared. Then, the prepared multilayer substrate was immersed in the second etching solution for 20 seconds, thereby performing the etching of the first blackened layer (the first blackened layer etching step). Both the copper ion concentration and the iron ion concentration of the second etching solution were zero.

實驗例7-4~實驗例7-6中,在以下的條件下實施了圖案化步驟。 In Experimental Examples 7-4 to 7-6, a patterning step was performed under the following conditions.

作為第1蝕刻液,準備了濃度為25質量%且溫度為30℃的氯化鐵溶液。接下來,將所準備的積層體基板浸漬在第1蝕刻液中50秒,由此進行了第1黑化層、導電層、及第2黑化層的蝕刻。 As the first etching solution, a ferric chloride solution having a concentration of 25% by mass and a temperature of 30 ° C was prepared. Next, the prepared multilayer substrate was immersed in the first etching solution for 50 seconds, whereby the first blackened layer, the conductive layer, and the second blackened layer were etched.

需要說明的是,實驗例7-4~實驗例7-6中,沒有進行利用第2蝕刻液的蝕刻。 In addition, in Experimental Example 7-4 to Experimental Example 7-6, the etching with the 2nd etching liquid was not performed.

在各實驗例中實施了上述的圖案化步驟之後,浸漬在濃度為5質量%且溫度為40℃的氫氧化鈉水溶液中60秒,使阻劑圖案膨潤、剝離並將其除去之後,進行了清洗和乾燥,由此獲得了透明導電性基板。 After performing the above-mentioned patterning step in each experimental example, immersion in an aqueous sodium hydroxide solution having a concentration of 5% by mass and a temperature of 40 ° C. for 60 seconds to swell, peel, and remove the resist pattern was performed. By washing and drying, a transparent conductive substrate was obtained.

針對所獲得的透明導電性基板,採用SEM,對從導電配線層伸出的第1黑化配線層的伸出寬度L的最大值進行了評價。 With respect to the obtained transparent conductive substrate, the maximum value of the protruding width L of the first blackened wiring layer protruding from the conductive wiring layer was evaluated using SEM.

評價結果示於表8。此外,圖9和圖10分別示出了實驗例7-1和實驗例7-6的導電配線層周邊的SEM圖像。 The evaluation results are shown in Table 8. In addition, FIGS. 9 and 10 show SEM images of the periphery of the conductive wiring layer of Experimental Example 7-1 and Experimental Example 7-6, respectively.

〔表8〕 [Table 8]

可確認到,在實驗例7-1~實驗例7-3中,不存在第1黑化層的殘渣,並可進行導電配線層無剝離和/或欠損的良好的蝕刻。此外,如表7所示,還可確認到,在實驗例7-1~實驗例7-3所獲得的透明導電性基板中,第1黑化配線層的伸出寬度L為0.5μm以下。例如,如圖9所示,確認到了,在實驗例7-1的透明導電性基板的SEM圖像中,基本上僅能觀察到透明基材91和第2黑化配線層92,不能看到自被第2黑化配線層92覆蓋的導電配線層的第1黑化配線層的伸出。 It can be confirmed that in Experimental Examples 7-1 to 7-3, the residue of the first blackened layer does not exist, and the conductive wiring layer can be etched well without peeling or loss. In addition, as shown in Table 7, it was also confirmed that in the transparent conductive substrates obtained in Experimental Examples 7-1 to 7-3, the protruding width L of the first blackened wiring layer was 0.5 μm or less. For example, as shown in FIG. 9, it was confirmed that, in the SEM image of the transparent conductive substrate of Experimental Example 7-1, only the transparent base material 91 and the second blackened wiring layer 92 were basically observed, but they were not visible. Projection from the first blackened wiring layer of the conductive wiring layer covered by the second blackened wiring layer 92.

另一方面,確認到了,在實驗例7-4和實驗例7-5中,第1黑化層沒有被蝕刻,在整個表面上都殘留了下來。此外,還確認到了,在實驗例7-6中,第1黑化層的平均反射率較高,故,與實驗例7-4和實驗例7-5相比,對於蝕刻液的反應性較高,可對一部分進行除去。然而,如圖10所示,也確認 到了,就第1黑化配線層103而言,其從被透明基材101上配置的第2黑化配線層102所覆蓋的導電配線層進行了伸出,並且第1黑化配線層的伸出寬度L的最大值為0.9μm。 On the other hand, it was confirmed that in Experimental Example 7-4 and Experimental Example 7-5, the first blackened layer was not etched and remained on the entire surface. In addition, it was also confirmed that, in Experimental Example 7-6, the average reflectance of the first blackened layer was high. Therefore, compared with Experimental Example 7-4 and Experimental Example 7-5, the reactivity to the etching solution was relatively low. High, can remove a part. However, as shown in FIG. 10, it was confirmed that the first blackened wiring layer 103 protruded from the conductive wiring layer covered by the second blackened wiring layer 102 disposed on the transparent substrate 101. The maximum value of the protruding width L of the first blackened wiring layer is 0.9 μm.

以上對透明導電性基板的製造方法和透明導電性基板藉由實施方式和實施例等進行了說明,但本發明並不限定於上述實施方式和實施例等。在申請專利範圍記載的本發明的主旨的範圍內,還可進行各種各樣的變形和變更。 As mentioned above, although the manufacturing method of a transparent conductive substrate, and a transparent conductive substrate were demonstrated by embodiment, an example, etc., this invention is not limited to the said embodiment, an example, etc. Various modifications and changes can be made within the scope of the gist of the present invention described in the patent application scope.

本申請主張基於2017年5月29日向日本專利廳申請的特願2017-105836號和2017年7月25日向日本專利廳申請的特願2017-143963號的優先權,並將特願2017-105836號和特願2017-143963號的內容全部引用於本申請。 This application claims priority based on Japanese Patent Application No. 2017-105836 filed with the Japan Patent Office on May 29, 2017 and Japanese Patent Application No. 2017-143963 filed with the Japanese Patent Office on July 25, 2017, and will file Japanese Patent Application No. 2017-105836 The contents of No. and Special Will 2017-143963 are all incorporated in this application.

Claims (10)

一種透明導電性基板的製造方法,具有圖案化步驟,該圖案化步驟對積層體基板的積層體進行圖案化,該積層體基板包含透明基材和該積層體,該積層體配置在該透明基材的至少一個表面上且從該透明基材側依次積層有含有鎳和銅的第1黑化層、及含有銅的導電層,該圖案化步驟具有:藉由可溶解銅的第1蝕刻液對該導電層進行蝕刻的導電層蝕刻階段;及藉由含有氯化物離子和水的第2蝕刻液對該第1黑化層進行蝕刻的第1黑化層蝕刻階段,該第2蝕刻液的氯化物離子濃度以鹽酸換算計為10質量%以上。     A method for manufacturing a transparent conductive substrate, comprising a patterning step, the patterning step patterning a laminated body of a laminated substrate, the laminated substrate comprising a transparent substrate and the laminated body, and the laminated body is arranged on the transparent base On at least one surface of the material, a first blackened layer containing nickel and copper, and a conductive layer containing copper are laminated in this order from the transparent substrate side, and the patterning step includes: A conductive layer etching step in which the conductive layer is etched; and a first blackened layer etching step in which the first blackened layer is etched by a second etchant containing chloride ions and water; The compound ion concentration is 10% by mass or more in terms of hydrochloric acid.     如請求項1所述之透明導電性基板的製造方法,其中,該積層體在該導電層的與該第1黑化層相對的表面的相反側的表面上還具有含有鎳和銅的第2黑化層,在該導電層蝕刻階段中,藉由該第1蝕刻液對該導電層和該第2黑化層進行蝕刻。     The method for manufacturing a transparent conductive substrate according to claim 1, wherein the layered body further includes a second black containing nickel and copper on a surface of the conductive layer opposite to a surface opposite to the first blackened layer. In the etching step of the conductive layer, the conductive layer and the second blackened layer are etched by the first etchant.     如請求項1所述之透明導電性基板的製造方法,其中,該積層體在該導電層的與該第1黑化層相對的表面的相反側的表面上還具有含有鎳和銅的第2黑化層,該圖案化步驟在該導電層蝕刻階段之前還具有藉由該第2蝕刻液對該第2黑化層進行蝕刻的第2黑化層蝕刻階段。     The method for manufacturing a transparent conductive substrate according to claim 1, wherein the layered body further includes a second black containing nickel and copper on a surface of the conductive layer opposite to a surface opposite to the first blackened layer. Layer, the patterning step further includes a second blackened layer etching step of etching the second blackened layer by the second etchant before the conductive layer etching step.     如請求項1至3中任一項所述之透明導電性基板的製造方法,其中,該第2蝕刻液含有從氯化鐵和氯化銅中選出的1種以上。     The method for manufacturing a transparent conductive substrate according to any one of claims 1 to 3, wherein the second etching solution contains one or more selected from ferric chloride and copper chloride.     如請求項1至4中任一項所述之透明導電性基板的製造方法,其 中,該第2蝕刻液含有鹽酸和水,鹽酸的濃度為10質量%以上且37質量%以下,銅離子濃度為0.4質量%以下。     The method for manufacturing a transparent conductive substrate according to any one of claims 1 to 4, wherein the second etching solution contains hydrochloric acid and water, the concentration of the hydrochloric acid is 10% by mass or more and 37% by mass or less, and the copper ion concentration It is 0.4% by mass or less.     如請求項1至5中任一項所述之透明導電性基板的製造方法,其中,該第2蝕刻液含有鹽酸和水,鹽酸的濃度為10質量%以上且37質量%以下,鐵離子濃度為0.2質量%以下。     The method for manufacturing a transparent conductive substrate according to any one of claims 1 to 5, wherein the second etching solution contains hydrochloric acid and water, a concentration of the hydrochloric acid is 10% by mass or more and 37% by mass or less, and an iron ion concentration It is 0.2% by mass or less.     如請求項1至6中任一項所述之透明導電性基板的製造方法,其中,在該圖案化步驟之前,還具有:在該積層體的與該透明基材相對的表面的相反側的表面即露出表面上配置阻劑(resist)的阻劑配置步驟,該阻劑配置步驟具有:在該露出表面上形成感光性阻劑層的感光性阻劑層形成階段;及根據欲形成的阻劑圖案對該感光性阻劑層進行紫外線曝光,並對未曝光部分進行顯影,由此形成阻劑圖案的阻劑圖案形成階段。     The method for manufacturing a transparent conductive substrate according to any one of claims 1 to 6, further comprising: before the patterning step, on the opposite side of a surface of the laminated body opposite to the transparent substrate The surface is a resist disposing step of placing a resist on the exposed surface. The resist disposing step includes: a photoresist layer forming stage of forming a photoresist layer on the exposed surface; and a resist to be formed according to the resist to be formed. The resist pattern is a resist pattern forming stage in which the photosensitive resist layer is exposed to ultraviolet rays and unexposed portions are developed to form a resist pattern.     一種透明導電性基板,具有:透明基材;及配置在該透明基材的至少一個表面上的金屬細線,該金屬細線為從該透明基材側依次積層有含有鎳和銅的第1黑化配線層、及含有銅的導電配線層之積層體,在從與該透明基材的一個表面垂直的方向觀察的情況下,從該導電配線層 伸出的該第1黑化配線層的伸出寬度為0.5μm以下。     A transparent conductive substrate comprising: a transparent base material; and a thin metal wire disposed on at least one surface of the transparent base material. The thin metal wire is a first blackened wiring containing nickel and copper laminated in this order from the transparent base material side. Of the first blackened wiring layer protruding from the conductive wiring layer when viewed from a direction perpendicular to one surface of the transparent base material, and a laminate of the conductive wiring layer containing copper. It is 0.5 μm or less.     如請求項8所述之透明導電性基板,其中,該金屬細線在該導電配線層的與該第1黑化配線層相對的表面的相反側的表面上還具有含有鎳和銅的第2黑化配線層。     The transparent conductive substrate according to claim 8, wherein the thin metal wire further has a second blackening containing nickel and copper on a surface of the conductive wiring layer opposite to a surface opposite to the first blackened wiring layer. Wiring layer.     如請求項8或9所述之透明導電性基板,其中,該第1黑化配線層的波長為400nm以上且700nm以下的光的反射率的平均值為15%以下。     The transparent conductive substrate according to claim 8 or 9, wherein an average value of the reflectance of light having a wavelength of 400 nm or more and 700 nm or less of the first blackened wiring layer is 15% or less.    
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