TW201411662A - Transparent electrode substrate, its manufacturing method and image display device - Google Patents

Transparent electrode substrate, its manufacturing method and image display device Download PDF

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Publication number
TW201411662A
TW201411662A TW102131698A TW102131698A TW201411662A TW 201411662 A TW201411662 A TW 201411662A TW 102131698 A TW102131698 A TW 102131698A TW 102131698 A TW102131698 A TW 102131698A TW 201411662 A TW201411662 A TW 201411662A
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layer
conductor layer
transparent electrode
transparent
electrode substrate
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TW102131698A
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Chinese (zh)
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Makoto Tsunekawa
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Nitto Denko Corp
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Abstract

A transparent electrode substrate includes: an insulation substrate; and a conductive layer formed at least on one side of the insulation substrate in the thickness direction. The conductive layer includes: a transparent conductive layer formed on one side of the insulation substrate in the thickness direction; a low-resistance layer formed on one side of the transparent conductive layer in the thickness direction for lowering the resistance of the conductive layer; and a protection layer formed with etching-friendly material on one surface of the low-resistance layer in the thickness direction. The etching friendly material is selected from at least one metal consisting of nickel, tin and nickel-copper alloy. The transparent conductive layer is formed with indium tin oxide. The low-resistance layer is formed with at least one metal selected from the group consisting of copper, silver and gold.

Description

透明電極基板、其製造方法及圖像顯示裝置 Transparent electrode substrate, manufacturing method thereof and image display device

本發明係關於一種透明電極基板、其製造方法及圖像顯示裝置,詳細而言係關於一種透明電極基板之製造方法、藉由該透明電極基板之製造方法而獲得之透明電極基板及具有該透明電極基板之圖像顯示裝置。 The present invention relates to a transparent electrode substrate, a method for producing the same, and an image display device, and more particularly to a method for producing a transparent electrode substrate, a transparent electrode substrate obtained by the method for producing the transparent electrode substrate, and the transparent substrate An image display device for an electrode substrate.

已知先前會於液晶顯示裝置等圖像顯示裝置中使用設有透明電極之透明電極基板作為觸控面板。 It is known that a transparent electrode substrate provided with a transparent electrode is used as a touch panel in an image display device such as a liquid crystal display device.

例如提出有藉由於玻璃基板上依序積層圖案化為特定圖案之氧化銦錫(ITO,Indium Tin Oxides)層、銅層(銅單層鍍金)及金層(電解鍍金層)而得之透明電極基板(例如參照日本專利特開平6-148661號公報)。 For example, a transparent electrode obtained by sequentially depositing a pattern of indium tin oxide (ITO, Indium Tin Oxides), a copper layer (copper single layer gold plating), and a gold layer (electrolytic gold plating layer) on a glass substrate is proposed. A substrate (for example, see Japanese Patent Laid-Open No. Hei 6-148661).

於日本專利特開平6-148661號公報中係藉由位於透明電極基板最表面之金層(電解鍍金層)而防止銅層之腐蝕,從而實現銅層之保護。 In the Japanese Patent Publication No. Hei 6-148661, the copper layer is protected by corrosion of the gold layer (electrolytic gold plating layer) on the outermost surface of the transparent electrode substrate.

然而,根據透明電極基板之用途不同,需要首先於玻璃基板之整個上表面依序積層ITO層、銅層及金層,然後,藉由蝕刻將此等積層部分圖案化為所需形狀。 However, depending on the use of the transparent electrode substrate, it is necessary to sequentially deposit an ITO layer, a copper layer, and a gold layer on the entire upper surface of the glass substrate, and then pattern these laminated portions into a desired shape by etching.

然而,金層由於化學穩定性較高而難以蝕刻,因此,存在無法將積層部分圖案化為所需形狀之問題。 However, since the gold layer is difficult to etch due to high chemical stability, there is a problem that the layered portion cannot be patterned into a desired shape.

本發明之目的在於提供一種包括可容易地進行圖案化之導體層之透明電極基板、其製造方法及圖像顯示裝置。 An object of the present invention is to provide a transparent electrode substrate including a conductor layer which can be easily patterned, a method for producing the same, and an image display device.

本發明之透明電極基板之特徵在於包括:絕緣基板;及導體層,其形成於上述絕緣基板之至少厚度方向之一側;且上述導體層包括:透明導體層,其形成於上述絕緣基板之上述厚度方向之一側;低電阻化層,其形成於上述透明導體層之上述厚度方向之一側,用於降低上述導體層之電阻;及保護層,其係用易蝕刻材料形成於上述低電阻化層之上述厚度方向之一表面。 The transparent electrode substrate of the present invention includes: an insulating substrate; and a conductor layer formed on one side of at least one of thickness directions of the insulating substrate; and the conductor layer includes: a transparent conductor layer formed on the insulating substrate One side in the thickness direction; a low resistance layer formed on one side of the thickness direction of the transparent conductor layer for reducing the resistance of the conductor layer; and a protective layer formed of the easy-etching material at the low resistance One of the above thickness directions of the layer.

又,於本發明之透明電極基板中,較佳為上述易蝕刻材料係選自鎳、錫及鎳銅合金之至少1種金屬。 Further, in the transparent electrode substrate of the present invention, it is preferable that the easily etchable material is at least one selected from the group consisting of nickel, tin, and nickel-copper alloy.

又,於本發明之透明電極基板中,較佳為上述透明導體層係用氧化銦錫形成,且上述低電阻化層係用選自由銅、銀及金所組成之群之至少1種金屬形成。 Further, in the transparent electrode substrate of the present invention, it is preferable that the transparent conductor layer is formed of indium tin oxide, and the low resistance layer is formed of at least one metal selected from the group consisting of copper, silver, and gold. .

又,於本發明之透明電極基板中,較佳為上述透明導體層係形成於上述絕緣基板之上述厚度方向之一側整個表面,上述低電阻化層係形成於上述透明導體層之上述厚度方向之一側整個表面,且上述保護層係形成於上述低電阻化層之上述厚度方向之一整個表面。 Further, in the transparent electrode substrate of the present invention, it is preferable that the transparent conductor layer is formed on one surface of the insulating substrate on one side in the thickness direction, and the low resistance layer is formed in the thickness direction of the transparent conductor layer. One of the entire surfaces is formed, and the protective layer is formed on one surface of the low-resistance layer in the thickness direction.

又,於本發明之透明電極基板中,較佳為上述導體層係於上述絕緣基板上形成為導體圖案。 Further, in the transparent electrode substrate of the present invention, it is preferable that the conductor layer is formed as a conductor pattern on the insulating substrate.

又,於本發明之透明電極基板中,較佳為上述導體圖案包括:引出配線,其包含上述導體層;及透明電極,其與上述引出配線相連續地形成,且包含上述透明導體層。 Further, in the transparent electrode substrate of the present invention, preferably, the conductor pattern includes: a lead wire including the conductor layer; and a transparent electrode formed continuously with the lead wire and including the transparent conductor layer.

又,本發明之透明電極基板之製造方法之特徵在於包括如下步驟:準備步驟,其係準備包含絕緣基板及積層於上述絕緣基板之至少厚度方向之一側之透明導體層的積層板;低電阻化步驟,其係將低電 阻化層積層於上述透明導體層之上述厚度方向之一側;以及保護步驟,其係將保護層用易蝕刻材料形成於上述低電阻化層之上述厚度方向之一表面。 Moreover, the method for producing a transparent electrode substrate of the present invention includes the steps of: preparing a laminate comprising an insulating substrate and a transparent conductor layer laminated on at least one of the thickness directions of the insulating substrate; Step, which will be low The resist layer is laminated on one side of the thickness direction of the transparent conductor layer, and a protective step is formed by forming a protective layer on the surface of the low-resistance layer in one of the thickness directions.

又,較佳為本發明之透明電極基板之製造方法進而包括圖案化步驟,該圖案化步驟係於上述保護步驟後對包含上述透明導體層、上述低電阻化層及上述保護層之導體層進行蝕刻而形成導體圖案。 Moreover, it is preferable that the method for producing a transparent electrode substrate of the present invention further includes a patterning step of performing the protective layer on the conductor layer including the transparent conductor layer, the low resistance layer, and the protective layer. Etching forms a conductor pattern.

又,較佳為本發明之透明電極基板之製造方法進而包括如下步驟:藉由自上述導體圖案之一部分除去上述保護層及上述低電阻化層而由上述透明導體層形成透明電極,並且將與上述導體圖案之剩餘部分對應之上述導體層作為引出配線。 Further, the method for producing a transparent electrode substrate of the present invention further includes the step of forming a transparent electrode from the transparent conductor layer by partially removing the protective layer and the low resistance layer from one of the conductor patterns, and The conductor layer corresponding to the remaining portion of the conductor pattern serves as a lead wiring.

又,本發明之圖像顯示裝置之特徵在於包括透明電極基板;上述透明電極基板包括:絕緣基板;及導體層,其形成於上述絕緣基板之至少厚度方向之一側;且上述導體層包括:透明導體層,其形成於上述絕緣基板之上述厚度方向之一側;低電阻化層,其形成於上述透明導體層之上述厚度方向之一側,用於降低上述導體層之電阻;及保護層,其係用易蝕刻材料形成於上述低電阻化層之上述厚度方向之一表面。 Moreover, the image display device of the present invention includes a transparent electrode substrate; the transparent electrode substrate includes: an insulating substrate; and a conductor layer formed on one side of at least one of thickness directions of the insulating substrate; and the conductor layer includes: a transparent conductor layer formed on one side of the thickness direction of the insulating substrate; and a low resistance layer formed on one side of the thickness direction of the transparent conductor layer for reducing resistance of the conductor layer; and a protective layer It is formed on one surface of the low-resistance layer in the thickness direction by an easily etchable material.

又,於本發明之圖像顯示裝置中,較佳為上述透明電極基板為觸控面板。 Further, in the image display device of the present invention, it is preferable that the transparent electrode substrate is a touch panel.

又,較佳為本發明之圖像顯示裝置為液晶顯示裝置。 Moreover, it is preferable that the image display device of the present invention is a liquid crystal display device.

藉由本發明之透明電極基板之製造方法而獲得之本發明之透明電極基板由於包括用易蝕刻材料形成於低電阻化層之厚度方向之一表面之保護層,故可容易地對包含在厚度方向之一表面形成保護層之低電阻化層的導體層進行蝕刻而圖案化為所需形狀。 The transparent electrode substrate of the present invention obtained by the method for producing a transparent electrode substrate of the present invention can be easily included in the thickness direction because it includes a protective layer formed on one surface in the thickness direction of the low-resistance layer by an etchable material. A conductor layer of a low resistance layer on which a protective layer is formed is etched and patterned into a desired shape.

因此,本發明之圖像顯示裝置由於具有包含得以高精度地圖案化之導體層之透明電極基板,故可實現可靠性之提高。 Therefore, since the image display device of the present invention has a transparent electrode substrate including a conductor layer which is patterned with high precision, reliability can be improved.

1‧‧‧透明電極基板 1‧‧‧Transparent electrode substrate

2‧‧‧絕緣基板 2‧‧‧Insert substrate

3‧‧‧導體層 3‧‧‧Conductor layer

4‧‧‧透明導體層 4‧‧‧Transparent conductor layer

5‧‧‧低電阻化層 5‧‧‧Low-resisting layer

6‧‧‧密接層 6‧‧ ‧ close layer

7‧‧‧保護層 7‧‧‧Protective layer

8‧‧‧導體圖案 8‧‧‧Conductor pattern

9‧‧‧引出配線 9‧‧‧Leading wiring

10‧‧‧透明電極 10‧‧‧Transparent electrode

11‧‧‧保護玻璃層 11‧‧‧protective glass layer

12‧‧‧偏光板 12‧‧‧Polar plate

13‧‧‧間隙層 13‧‧‧ gap layer

14‧‧‧LCD模組 14‧‧‧LCD module

15‧‧‧黏著劑層 15‧‧‧Adhesive layer

17‧‧‧第1抗蝕劑層 17‧‧‧1st resist layer

18‧‧‧第2抗蝕劑層 18‧‧‧2nd resist layer

19‧‧‧積層板 19‧‧‧Laminated boards

20‧‧‧觸控面板 20‧‧‧Touch panel

21‧‧‧間隔件 21‧‧‧ spacers

22‧‧‧透明絕緣薄膜 22‧‧‧Transparent insulating film

24‧‧‧光學調整膜 24‧‧‧Optical adjustment film

30‧‧‧液晶顯示裝置 30‧‧‧Liquid crystal display device

圖1係表示本發明之透明電極基板之製造方法之第1實施形態之步驟圖,圖1(a)係表示準備絕緣基板而積層光學調整膜之步驟,圖1(b)係表示將透明導體層積層於光學調整膜之上表面之步驟,圖1(c)係表示將密接層積層於透明導體層之上表面之步驟,圖1(d)係表示將低電阻化層積層於密接層之上表面之步驟,圖1(e)係表示將保護層積層於低電阻化層之上表面之步驟。 Fig. 1 is a view showing a first embodiment of a method for producing a transparent electrode substrate of the present invention, wherein Fig. 1(a) shows a step of preparing an insulating substrate to laminate an optical adjustment film, and Fig. 1(b) shows a transparent conductor. The step of laminating the layer on the upper surface of the optical adjustment film, FIG. 1(c) shows the step of laminating the adhesion layer on the upper surface of the transparent conductor layer, and FIG. 1(d) shows the layer of the low resistance layer laminated on the adhesion layer. The step of the upper surface, FIG. 1(e) shows the step of laminating the protective layer on the upper surface of the low-resistance layer.

圖2係表示由圖1(e)所示之透明電極基板之導體層形成導體圖案之步驟圖,圖2(a)係表示將第1抗蝕劑層積層於保護層之上表面之步驟,圖2(b)係表示對導體層進行蝕刻,繼而除去第1抗蝕劑層之步驟,圖2(c)係表示以被覆於導體圖案中與引出配線對應之部分之方式將第2抗蝕劑層積層於絕緣基板上之步驟,圖2(d)係表示蝕刻自第2抗蝕劑層露出之保護層、低電阻化層及密接層,繼而除去第2抗蝕劑層之步驟。 2 is a view showing a step of forming a conductor pattern by a conductor layer of the transparent electrode substrate shown in FIG. 1(e), and FIG. 2(a) shows a step of laminating a first resist on the upper surface of the protective layer. 2(b) shows a step of etching the conductor layer and then removing the first resist layer, and FIG. 2(c) shows that the second resist is applied so as to cover the portion corresponding to the lead wiring in the conductor pattern. The step of laminating the layer on the insulating substrate, and FIG. 2(d) shows the step of etching the protective layer, the low-resistance layer and the adhesion layer exposed from the second resist layer, and then removing the second resist layer.

圖3係表示設置圖2(d)所示之透明電極基板作為觸控面板之液晶顯示裝置之剖面圖。 3 is a cross-sectional view showing a liquid crystal display device in which a transparent electrode substrate shown in FIG. 2(d) is provided as a touch panel.

圖4係表示將圖3所示之液晶顯示裝置之觸控面板分解時之放大剖面圖。 4 is an enlarged cross-sectional view showing the touch panel of the liquid crystal display device shown in FIG. 3 in an exploded manner.

圖5係表示第1實施形態之透明電極基板之變化例(於絕緣基板之兩側設置導體層之態樣)之剖面圖。 Fig. 5 is a cross-sectional view showing a modification of the transparent electrode substrate of the first embodiment (a state in which conductor layers are provided on both sides of the insulating substrate).

圖6係第1實施形態之透明電極基板之變化例(未設置密接層之態樣)之剖面圖,圖6(a)係表示將導體層形成於絕緣基板之整個上表面之態樣, 6 is a cross-sectional view showing a modification of the transparent electrode substrate of the first embodiment (a state in which an adhesion layer is not provided), and FIG. 6(a) shows a state in which a conductor layer is formed on the entire upper surface of the insulating substrate.

圖6(b)係表示將導體層表示為導體圖案之態樣。 Fig. 6(b) shows a state in which a conductor layer is represented as a conductor pattern.

圖7係表示第1實施形態之透明電極基板之變化例(未設置光學調整膜之態樣)之剖面圖。 Fig. 7 is a cross-sectional view showing a modification of the transparent electrode substrate of the first embodiment (the aspect in which the optical adjustment film is not provided).

圖8係表示第1實施形態之透明電極基板之變化例(未設置光學調整膜之態樣)之剖面圖。 Fig. 8 is a cross-sectional view showing a modification of the transparent electrode substrate of the first embodiment (the aspect in which the optical adjustment film is not provided).

<第1實施形態> <First embodiment> <透明電極基板> <Transparent electrode substrate>

於各圖中,存在將紙面上下方向(厚度方向)作為第1方向,將紙面左右方向作為第2方向,將紙面深度方向(前後方向)作為第3方向之情形。 In each of the drawings, the paper surface direction (thickness direction) is referred to as a first direction, the paper surface left and right direction is referred to as a second direction, and the paper surface depth direction (front and rear direction) is referred to as a third direction.

於圖1(e)中,作為本發明之一實施形態之透明電極基板1係呈平板形狀,且包括:絕緣基板2;及導體層3,其形成於絕緣基板2上(厚度方向之一側)。 1(e), a transparent electrode substrate 1 according to an embodiment of the present invention has a flat plate shape and includes: an insulating substrate 2; and a conductor layer 3 formed on the insulating substrate 2 (one side in the thickness direction) ).

絕緣基板2係形成為於俯視下與透明電極基板1之外形形狀對應之薄膜狀(或薄板狀)。形成絕緣基板2之材料例如可列舉透明材料。透明材料例如可列舉玻璃等無機透明材料、以及聚對苯二甲酸乙二酯(PET,Polyethylene Terephthalate)、聚甲基丙烯酸酯(PMMA,Polymethacrylate)、聚碳酸酯(PC,Polycarbonate)、聚乙烯(PE,Polyethylene)、環烯烴聚合物(COP,Cycloolefin Polymer)等有機透明材料。自輕薄性之觀點考慮,較佳可列舉有機透明材料,更佳可列舉PET。上述材料之玻璃轉移溫度例如為180℃以上,又,例如為220℃以下。絕緣基板2之厚度例如為10μm以上,較佳為25μm以上,又,例如為300μm以下,較佳為200μm以下。 The insulating substrate 2 is formed into a film shape (or a thin plate shape) corresponding to the shape of the transparent electrode substrate 1 in plan view. The material for forming the insulating substrate 2 is, for example, a transparent material. Examples of the transparent material include inorganic transparent materials such as glass, and polyethylene terephthalate (PET), polymethacrylate (PMMA, Polymethacrylate), polycarbonate (PC, Polycarbonate), and polyethylene (Polyethylene Terephthalate). Organic transparent materials such as PE, Polyethylene, and Cycloolefin Polymer. From the viewpoint of lightness and thinness, an organic transparent material is preferable, and PET is more preferable. The glass transition temperature of the above material is, for example, 180 ° C or higher, and is, for example, 220 ° C or lower. The thickness of the insulating substrate 2 is, for example, 10 μm or more, preferably 25 μm or more, and is, for example, 300 μm or less, or preferably 200 μm or less.

又,於絕緣基板2之整個上表面形成有光學調整膜24。光學調整膜24例如包含SiO2系材料等無機光學材料或有機光學材料等,玻璃轉 移溫度為180℃以上,厚度例如為1nm以上,較佳為5nm以上,又,例如為1000nm以下,較佳為500nm以下。 Further, an optical adjustment film 24 is formed on the entire upper surface of the insulating substrate 2. The optical adjustment film 24 contains, for example, an inorganic optical material such as an SiO 2 -based material or an organic optical material, and has a glass transition temperature of 180° C. or higher and a thickness of, for example, 1 nm or more, preferably 5 nm or more, and more preferably, for example, 1000 nm or less. Below 500 nm.

導體層3係置以光學調整膜24之間隔而設於絕緣基板2上。亦即,導體層3係積層於光學調整膜24之整個上表面。導體層3包含複數層,具體包含:透明導體層4,其形成於光學調整膜24之上表面(厚度方向之一表面);低電阻化層5,其形成於透明導體層4上(厚度方向之一側);及密接層6,其介於透明導體層4與低電阻化層5之間。進而,導體層3包含保護層7,其形成於低電阻化層5之上表面(厚度方向之一表面)。亦即,於導體層3中,在光學調整膜24上(厚度方向之一側)依序積層有透明導體層4、密接層6、低電阻化層5及保護層7。 The conductor layer 3 is provided on the insulating substrate 2 at intervals of the optical adjustment film 24. That is, the conductor layer 3 is laminated on the entire upper surface of the optical adjustment film 24. The conductor layer 3 includes a plurality of layers, specifically including a transparent conductor layer 4 formed on the upper surface (one surface in the thickness direction) of the optical adjustment film 24, and a low resistance layer 5 formed on the transparent conductor layer 4 (thickness direction) One side); and an adhesion layer 6 between the transparent conductor layer 4 and the low resistance layer 5. Further, the conductor layer 3 includes a protective layer 7 which is formed on the upper surface (one surface in the thickness direction) of the low-resistance layer 5. In other words, in the conductor layer 3, the transparent conductor layer 4, the adhesion layer 6, the low resistance layer 5, and the protective layer 7 are sequentially laminated on the optical adjustment film 24 (one side in the thickness direction).

透明導體層4於下述透明電極10(參照圖2(d))中為用於觸控輸入之層,於導體層3中位於最下層,且形成於光學調整膜24之整個上表面。形成透明導體層4之透明導體例如可列舉氧化銦錫(ITO)等氧化物。透明導體層4之厚度例如為5nm以上,較佳為10nm以上,又,例如為200nm以下,較佳為30nm以下。 The transparent conductor layer 4 is a layer for touch input in the transparent electrode 10 (see FIG. 2(d)) described below, and is located at the lowermost layer in the conductor layer 3, and is formed on the entire upper surface of the optical adjustment film 24. Examples of the transparent conductor forming the transparent conductor layer 4 include oxides such as indium tin oxide (ITO). The thickness of the transparent conductor layer 4 is, for example, 5 nm or more, preferably 10 nm or more, and is, for example, 200 nm or less, preferably 30 nm or less.

密接層6係用於提高透明導體層4與低電阻化層5之密接力之層,其形成於透明導體層4之整個上表面。形成密接層6之材料例如可列舉鎳、銅及其等之合金(包含含有金屬以外之成分之組合物)。自獲得更高之密接力之觀點考慮,較佳可列舉含有鎳及磷或硼作為必須成分之組合物等。 The adhesion layer 6 is a layer for improving the adhesion between the transparent conductor layer 4 and the low resistance layer 5, and is formed on the entire upper surface of the transparent conductor layer 4. Examples of the material for forming the adhesion layer 6 include alloys of nickel, copper, and the like (including a composition containing components other than the metal). From the viewpoint of obtaining a higher adhesion, a composition containing nickel, phosphorus or boron as an essential component is preferable.

鎳係作為主成包含於組合物中,其含有比率為除磷或硼之含有比率外之剩餘部分。 Nickel is contained as a main component in the composition, and the content thereof is the remainder other than the content ratio of phosphorus or boron.

磷或硼係作為副成分包含於組合物中,磷之含有比率例如為8質量%以上,較佳為9質量%以上,更佳為10質量%以上,又,例如為15質量%以下,較佳為13質量%以下。又,硼之含有比率相對於組合物,例如為0.1質量%以上,較佳為1質量%以上,又,例如為5質量% 以下,較佳為3質量%以下。 Phosphorus or boron is contained in the composition as a subcomponent, and the phosphorus content ratio is, for example, 8% by mass or more, preferably 9% by mass or more, more preferably 10% by mass or more, and further, for example, 15% by mass or less. Good is 13% by mass or less. Further, the content ratio of boron is, for example, 0.1% by mass or more, preferably 1% by mass or more, and further, for example, 5% by mass based on the composition. Hereinafter, it is preferably 3% by mass or less.

若磷或硼之含有比率低於上述下限,則存在無法充分提高透明導體層4與密接層6之密接力之情形。另一方面,若磷或硼之含有比率超過上述上限,則存在無法進行穩定的電鍍之情形。 When the content ratio of phosphorus or boron is less than the above lower limit, the adhesion between the transparent conductor layer 4 and the adhesion layer 6 may not be sufficiently improved. On the other hand, when the content ratio of phosphorus or boron exceeds the above upper limit, stable plating cannot be performed.

又,組合物視需要以適當之比率含有鈀、銠等貴金屬等觸媒作為任意成分。 Further, the composition contains a catalyst such as a noble metal such as palladium or rhodium as an optional component in an appropriate ratio.

密接層6之厚度例如為50nm以上,較佳為100nm以上,又,例如為3000nm以下,較佳為500nm以下。 The thickness of the adhesion layer 6 is, for example, 50 nm or more, preferably 100 nm or more, and is, for example, 3,000 nm or less, preferably 500 nm or less.

低電阻化層5係用於降低導體層3之電阻之層,隔著(介隔)密接層6積層於透明導體層4上。具體而言,低電阻化層5係形成於密接層6之整個上表面。形成低電阻化層5之材料例如可列舉銅、銀、金及其等之合金等導電材料(具體而言為金屬)。較佳可列舉銅、銀、金。此等材料之低電阻化層5之厚度係根據導體層3所要求之電阻值而適當設定,具體而言,例如為50nm以上,較佳為100nm以上,又,例如為3000nm以下,較佳為1000nm以下。 The low-resistance layer 5 is a layer for lowering the electric resistance of the conductor layer 3, and is laminated on the transparent conductor layer 4 via the (intervening) adhesion layer 6. Specifically, the low resistance layer 5 is formed on the entire upper surface of the adhesion layer 6. Examples of the material for forming the low-resistance layer 5 include conductive materials (specifically, metals) such as copper, silver, gold, and the like. Preferably, copper, silver, and gold are mentioned. The thickness of the low-resistance layer 5 of these materials is appropriately set according to the resistance value required for the conductor layer 3, and specifically, for example, 50 nm or more, preferably 100 nm or more, and further, for example, 3000 nm or less, preferably Below 1000nm.

保護層7係保護低電阻化層5之層,於導體層3中位於最上層,且形成於低電阻化層5之整個上表面。保護層7係由易蝕刻材料形成。易蝕刻材料係易於在下述蝕刻(參照圖2(b)及圖2(d))中除去之材料,具體可列舉鎳、錫及鎳銅合金等金屬。再者,上述各材料亦可調製為包含在保護層7之形成步驟中混入之添加物(例如磷等)等之組合物。 The protective layer 7 protects the layer of the low-resistance layer 5, is located in the uppermost layer of the conductor layer 3, and is formed on the entire upper surface of the low-resistance layer 5. The protective layer 7 is formed of an easily etchable material. The easily etchable material is a material which is easily removed by etching (see FIGS. 2(b) and 2(d)), and specific examples thereof include metals such as nickel, tin, and nickel-copper alloy. Further, each of the above materials may be prepared as a composition containing an additive (for example, phosphorus or the like) mixed in the step of forming the protective layer 7.

易蝕刻材料較佳可列舉含有鎳及磷或硼作為必須成分之組合物,更佳可列舉含有鎳及磷作為必須成分之組合物。必須成分之含有比率與密接層6中之含有比率相同。 The etchable material preferably contains a composition containing nickel, phosphorus or boron as an essential component, and more preferably a composition containing nickel and phosphorus as essential components. The content ratio of the essential components is the same as the content ratio of the adhesive layer 6.

保護層7係形成為單層或材料不同之複數層。較佳為形成為單層。保護層7之厚度例如為20nm以上,又,若考慮下述蝕刻時間,則例如為100nm以下。 The protective layer 7 is formed as a single layer or a plurality of layers different in material. It is preferably formed as a single layer. The thickness of the protective layer 7 is, for example, 20 nm or more, and is, for example, 100 nm or less in consideration of the etching time described below.

繼而,參照圖1(a)~圖1(e)對透明電極基板1之製造方法進行說明。 Next, a method of manufacturing the transparent electrode substrate 1 will be described with reference to FIGS. 1(a) to 1(e).

於該方法中,如圖1(a)所示,首先準備絕緣基板2。繼而,將光學調整膜24形成(積層)於絕緣基板2之整個上表面。 In this method, as shown in FIG. 1(a), the insulating substrate 2 is first prepared. Then, the optical adjustment film 24 is formed (laminated) on the entire upper surface of the insulating substrate 2.

繼而,如圖1(b)~圖1(e)所示,將導體層3形成於光學調整膜24上。 Then, as shown in FIGS. 1(b) to 1(e), the conductor layer 3 is formed on the optical adjustment film 24.

即,為了將導體層3形成於光學調整膜24上,如圖1(b)所示,首先將透明導體層4積層於光學調整膜24之上表面。 That is, in order to form the conductor layer 3 on the optical adjustment film 24, as shown in FIG. 1(b), the transparent conductor layer 4 is first laminated on the upper surface of the optical adjustment film 24.

具體而言,為了形成透明導體層4,例如使用真空蒸鍍、離子電鍍、濺鍍等物理蒸鍍。較佳為使用濺鍍。 Specifically, in order to form the transparent conductor layer 4, for example, physical vapor deposition such as vacuum deposition, ion plating, or sputtering is used. It is preferred to use sputtering.

藉此準備包括絕緣基板2、光學調整膜24以及積層於光學調整膜24之上表面(厚度方向之一表面)之透明導體層4的積層板19(準備步驟)。 Thereby, the laminated board 19 including the insulating substrate 2, the optical adjustment film 24, and the transparent conductor layer 4 laminated on the upper surface (one surface in the thickness direction) of the optical adjustment film 24 is prepared (preparation step).

繼而,如圖1(c)所示,將密接層6形成於透明導體層4之上表面(密接層積層步驟)。 Then, as shown in FIG. 1(c), the adhesion layer 6 is formed on the upper surface of the transparent conductor layer 4 (the adhesion layer deposition step).

具體而言,例如藉由電鍍、物理蒸鍍等將密接層6形成於透明導體層4之上表面。較佳為使用電鍍。 Specifically, the adhesion layer 6 is formed on the upper surface of the transparent conductor layer 4 by, for example, electroplating, physical vapor deposition, or the like. It is preferred to use electroplating.

電鍍例如可列舉無電解電鍍、電解電鍍,較佳可列舉無電解電鍍。 Examples of the plating include electroless plating and electrolytic plating, and electroless plating is preferred.

為了藉由無電解電鍍將密接層6形成於透明導體層4之上表面,首先,視需要例如對密接層6之上表面進行預處理。 In order to form the adhesion layer 6 on the upper surface of the transparent conductor layer 4 by electroless plating, first, for example, the surface of the upper surface of the adhesion layer 6 is pretreated as needed.

預處理例如可列舉脫脂、軟蝕刻、酸洗等。脫脂係於中性脫脂液中浸漬積層板19。軟蝕刻例如係於過硫酸鈉等過硫酸鹽之水溶液中浸漬積層板19。 Examples of the pretreatment include degreasing, soft etching, pickling, and the like. Degreasing is performed by impregnating the laminated board 19 in a neutral degreasing liquid. The soft etching is performed by, for example, immersing the laminate 19 in an aqueous solution of persulfate such as sodium persulfate.

於預處理後視需要在透明導體層4之上表面(表面)積層觸媒皮膜(未圖示)。觸媒皮膜(未圖示)係藉由將積層板19浸漬於觸媒液中而形 成。觸媒液例如可列舉包含觸媒或含有觸媒作為組成之觸媒化合物的液體(分散液或溶液)等。觸媒例如可列舉鈀、銠等貴金屬。觸媒化合物例如可列舉貴金屬化合物(貴金屬鹽)等。水溶液中之觸媒及/或觸媒化合物之含有比率係進行適當設定。 After the pretreatment, a catalyst film (not shown) is laminated on the upper surface (surface) of the transparent conductor layer 4 as needed. The catalyst film (not shown) is formed by immersing the laminate 19 in the catalyst liquid. to make. Examples of the catalyst liquid include a liquid (dispersion or solution) containing a catalyst or a catalyst compound containing a catalyst as a composition. Examples of the catalyst include noble metals such as palladium and rhodium. Examples of the catalyst compound include a noble metal compound (precious metal salt) and the like. The content ratio of the catalyst and/or the catalyst compound in the aqueous solution is appropriately set.

浸漬溫度例如為15℃以上,較佳為20℃以上,又,例如為50℃以下,較佳為40℃以下。 The immersion temperature is, for example, 15 ° C or higher, preferably 20 ° C or higher, and is, for example, 50 ° C or lower, preferably 40 ° C or lower.

浸漬時間例如為0.5分鐘以上,較佳為1分鐘以上,又,例如為10分鐘以下,較佳為5分鐘以下。 The immersion time is, for example, 0.5 minutes or longer, preferably 1 minute or longer, and for example, 10 minutes or shorter, preferably 5 minutes or shorter.

繼而,將於表面積層有觸媒皮膜(未圖示)之積層板19浸漬於無電解電鍍液中。 Then, a laminate 19 having a catalyst film (not shown) on the surface layer is immersed in the electroless plating solution.

無電解電鍍液係藉由調配鎳化合物及磷化合物或硼化合物以及水而調製。 The electroless plating solution is prepared by blending a nickel compound and a phosphorus compound or a boron compound with water.

鎳化合物例如可列舉硫酸鎳、硝酸鎳等鎳鹽等。當將鎳鹽調配於水中時,會生成鎳陽離子(Ni2+)。 Examples of the nickel compound include nickel salts such as nickel sulfate and nickel nitrate. When a nickel salt is formulated in water, a nickel cation (Ni 2+ ) is formed.

磷化合物例如可列舉次磷酸、次磷酸鹽(例如次磷酸鈉等)等磷系還原劑。當將磷系還原劑調配於水中時,會生成磷系陰離子(具體而言為次磷酸陰離子:HPO2 -)。 Examples of the phosphorus compound include phosphorus-based reducing agents such as hypophosphorous acid and hypophosphite (for example, sodium hypophosphite). When a phosphorus-based reducing agent is formulated in water, a phosphorus-based anion (specifically, a hypophosphorous anion: HPO 2 - ) is formed.

硼化合物例如可列舉:硼氫化鉀、硼氫化鈉等硼氫化合物以及二甲胺硼烷、三甲胺硼烷、三乙胺硼烷等胺硼烷化合物等。當將硼化物調配於水中時,會生成硼系陰離子(具體而言為硼酸陰離子,BO3 3-)。 Examples of the boron compound include a boron hydride compound such as potassium borohydride or sodium borohydride, and an amine borane compound such as dimethylamine borane, trimethylamine borane or triethylamine borane. When the boride is formulated in water, a boron anion (specifically, a boric acid anion, BO 3 3- ) is formed.

又,無電解電鍍液之pH例如係調整為2以上,較佳為4以上,又,例如為6以下,較佳為5以下。 Further, the pH of the electroless plating solution is adjusted to, for example, 2 or more, preferably 4 or more, and for example, 6 or less, preferably 5 or less.

浸漬溫度亦即無電解電鍍液之溫度例如為40℃以上,較佳為60℃以上,又,例如為90℃以下,較佳為80℃以下。若浸漬溫度處於上述範圍外,則存在無法將密接層6之厚度設定為所需範圍之情形。 The immersion temperature, that is, the temperature of the electroless plating solution is, for example, 40 ° C or higher, preferably 60 ° C or higher, and further, for example, 90 ° C or lower, preferably 80 ° C or lower. When the immersion temperature is outside the above range, there is a case where the thickness of the adhesion layer 6 cannot be set to a desired range.

若將積層板19浸漬於無電解電鍍液,則一面於密接層6(詳細而言 為觸媒皮膜)之表面藉由磷系陰離子或硼系陰離子之還原作用將鎳陽離子(Ni2+)還原從而生成鎳(Ni),並於內部含有磷(P)或硼(B),一面形成密接層6。 When the laminated plate 19 is immersed in the electroless plating solution, the nickel cation (Ni 2+ ) is reduced by the reduction of the phosphorus anion or the boron anion on the surface of the adhesion layer 6 (specifically, the catalyst film). Thus, nickel (Ni) is formed, and phosphorus (P) or boron (B) is contained inside to form the adhesion layer 6 on one side.

然後,視需要對密接層6進行加熱(烘烤)。 Then, the adhesion layer 6 is heated (baked) as needed.

加熱溫度為絕緣基板2及光學調整膜24之玻璃轉移溫度以下,又,例如為100℃以上,較佳為120℃以上。加熱時間例如為1分鐘以上,較佳為5分鐘以上,又,例如為90分鐘以下,較佳為60分鐘以下。 The heating temperature is equal to or lower than the glass transition temperature of the insulating substrate 2 and the optical adjustment film 24, and is, for example, 100 ° C or higher, preferably 120 ° C or higher. The heating time is, for example, 1 minute or longer, preferably 5 minutes or longer, and for example, 90 minutes or shorter, preferably 60 minutes or shorter.

進而,然後視需要對密接層6之上表面(表面)進行水洗。 Further, the upper surface (surface) of the adhesion layer 6 is then washed with water as needed.

繼而,如圖1(d)所示,將低電阻化層5形成於密接層6之上表面(低電阻化步驟)。 Then, as shown in FIG. 1(d), the low-resistance layer 5 is formed on the upper surface of the adhesion layer 6 (low resistance step).

具體而言,例如藉由電鍍、物理蒸鍍等將低電阻化層5形成於密接層6之上表面。較佳為電鍍,自提高相對於密接層6之密接性之觀點考慮,更佳為藉由電解電鍍形成低電阻化層5。 Specifically, the low-resistance layer 5 is formed on the upper surface of the adhesion layer 6 by, for example, electroplating, physical vapor deposition, or the like. It is preferable to electroplate, and it is more preferable to form the low-resistance layer 5 by electrolytic plating from the viewpoint of improving the adhesion to the adhesion layer 6.

然後,如圖1(e)所示,將保護層7形成於低電阻化層5之上表面(保護步驟)。 Then, as shown in FIG. 1(e), a protective layer 7 is formed on the upper surface of the low-resistance layer 5 (protection step).

保護層7係藉由與上述密接層6相同之方法用易蝕刻材料形成。 The protective layer 7 is formed of an easily etchable material by the same method as the above-described adhesion layer 6.

再者,自保護層7之厚度之均一性及低電阻化層5之防腐之觀點考慮,電鍍較佳為採用無電解電鍍。又,將積層板19浸漬至無電解電鍍液之時間例如可設定為1秒鐘以上,較佳為10秒鐘以上,又,例如為100秒鐘以下,較佳為50秒鐘以下。 Further, from the viewpoint of the uniformity of the thickness of the protective layer 7 and the corrosion prevention of the low-resistance layer 5, electroplating is preferably performed by electroless plating. Further, the time for immersing the laminated plate 19 in the electroless plating solution can be, for example, 1 second or longer, preferably 10 seconds or longer, and for example, 100 seconds or shorter, preferably 50 seconds or shorter.

藉此獲得透明電極基板1。 Thereby, the transparent electrode substrate 1 is obtained.

如圖1(e)所示,該透明電極基板1係將導體層3形成於光學調整膜24之整個上表面(透明導體層4之整個上側),例如,如圖2(d)所示,亦可將導體層3形成為導體圖案8。 As shown in FIG. 1(e), the transparent electrode substrate 1 is formed with the conductor layer 3 on the entire upper surface of the optical adjustment film 24 (the entire upper side of the transparent conductor layer 4), for example, as shown in FIG. 2(d). The conductor layer 3 can also be formed as a conductor pattern 8.

即,如圖2(a)~(d)所示,於透明電極基板1中,導體圖案8係藉由 利用蝕刻對導體層3進行圖案加工而得。 That is, as shown in FIGS. 2(a) to 2(d), in the transparent electrode substrate 1, the conductor pattern 8 is used by The conductor layer 3 is patterned by etching.

如圖2(d)所示,導體圖案8包括:引出配線9;及透明電極10,其與引出配線9相連續(未圖示)地形成。 As shown in FIG. 2(d), the conductor pattern 8 includes a lead-out wiring 9 and a transparent electrode 10 which is formed continuously (not shown) with the lead-out wiring 9.

引出配線9係於透明電極基板1之周端部相互置以間隔而配置有複數個。引出配線9於光學調整膜24之上表面(絕緣基板2上)包括導體層3(具體而言為透明導體層4、密接層6、低電阻化層5及保護層7)。 The lead wires 9 are disposed at a plurality of circumferential end portions of the transparent electrode substrate 1 at intervals. The lead wiring 9 includes a conductor layer 3 (specifically, a transparent conductor layer 4, an adhesion layer 6, a low resistance layer 5, and a protective layer 7) on the upper surface (on the insulating substrate 2) of the optical adjustment film 24.

透明電極10於下述液晶顯示裝置30(參照圖3)中構成檢測部(感測器),且係於透明電極基板1之中央相互置以間隔而配置有複數個。透明電極10之圖案例如係於前後方向延伸,於左右方向相互置以間隔而形成。透明電極10於光學調整膜24上包括透明導體層4。 The transparent electrode 10 constitutes a detecting portion (sensor) in the liquid crystal display device 30 (see FIG. 3) described below, and a plurality of the electrodes are disposed at intervals in the center of the transparent electrode substrate 1. The pattern of the transparent electrode 10 is formed, for example, in the front-rear direction, and is formed at intervals in the left-right direction. The transparent electrode 10 includes a transparent conductor layer 4 on the optical adjustment film 24.

繼而,參照圖2(a)~圖2(d)對在透明電極基板1中蝕刻導體層3而形成導體圖案8之方法(圖案化步驟)進行說明。 Next, a method (patterning step) of forming the conductor pattern 8 by etching the conductor layer 3 on the transparent electrode substrate 1 will be described with reference to FIGS. 2(a) to 2(d).

首先,於該方法中,如圖2(a)所示,將第1抗蝕劑層17形成於導體層3之上表面。 First, in this method, as shown in FIG. 2(a), the first resist layer 17 is formed on the upper surface of the conductor layer 3.

具體而言,首先,將乾膜抗蝕劑層積層於保護層7之整個上表面,繼而,藉由曝光及顯影按照與導體圖案8相同之圖案形成第1抗蝕劑層17。 Specifically, first, a dry film resist is laminated on the entire upper surface of the protective layer 7, and then the first resist layer 17 is formed in the same pattern as the conductor pattern 8 by exposure and development.

然後,於該方法中,如圖2(b)所示,對自第1抗蝕劑層17露出之導體層3進行蝕刻。於該蝕刻中係使用會溶解導體層3而不溶解透明導體層4及光學調整膜24之蝕刻液。 Then, in this method, as shown in FIG. 2(b), the conductor layer 3 exposed from the first resist layer 17 is etched. In the etching, an etching liquid which dissolves the conductor layer 3 without dissolving the transparent conductor layer 4 and the optical adjustment film 24 is used.

藉此,形成包含透明導體層4、密接層6、低電阻化層5及保護層7之導體圖案8。 Thereby, the conductor pattern 8 including the transparent conductor layer 4, the adhesion layer 6, the low resistance layer 5, and the protective layer 7 is formed.

然後,藉由剝離除去第1抗蝕劑層17。 Then, the first resist layer 17 is removed by lift-off.

繼而,於該方法中,如圖2(c)所示,以被覆與引出配線9(參照圖2(d))對應之導體層3且露出與透明電極10(參照圖2(d))對應之導體層3之方式,將第2抗蝕劑層18形成於光學調整膜24上。 Then, in this method, as shown in FIG. 2(c), the conductor layer 3 corresponding to the lead wiring 9 (see FIG. 2(d)) is covered and exposed to the transparent electrode 10 (see FIG. 2(d)). In the manner of the conductor layer 3, the second resist layer 18 is formed on the optical adjustment film 24.

具體而言,首先將乾膜抗蝕劑層積層於包含導體層3(導體圖案8)之光學調整膜24之整個上表面,繼而藉由曝光及顯影按照上述圖案形成第2抗蝕劑層18。 Specifically, first, a dry film resist is laminated on the entire upper surface of the optical adjustment film 24 including the conductor layer 3 (conductor pattern 8), and then the second resist layer 18 is formed in accordance with the above pattern by exposure and development. .

繼而,於該方法中,如圖2(d)所示,藉由蝕刻除去自第2抗蝕劑層18露出之導體層3之一部分,亦即保護層7、低電阻化層5及密接層6。 Then, in this method, as shown in FIG. 2(d), a portion of the conductor layer 3 exposed from the second resist layer 18, that is, the protective layer 7, the low-resistance layer 5, and the adhesion layer are removed by etching. 6.

於蝕刻中係使用會溶解保護層7、低電阻化層5及密接層6而不溶解透明導體層4及光學調整膜24之蝕刻液。 An etching liquid which dissolves the protective layer 7, the low-resistance layer 5, and the adhesion layer 6 without dissolving the transparent conductor layer 4 and the optical adjustment film 24 is used for etching.

然後,藉由剝離除去第2抗蝕劑層18。 Then, the second resist layer 18 is removed by lift-off.

藉此,藉由將作為導體圖案8之一部分之保護層7、低電阻化層5及密接層6除去,而由透明導體層4形成透明電極10,並且將與導體圖案8之剩餘部分對應之導體層3作為引出配線9。 Thereby, the transparent electrode 10 is formed of the transparent conductor layer 4 by removing the protective layer 7, the low-resistance layer 5, and the adhesion layer 6 which are a part of the conductor pattern 8, and corresponds to the remaining portion of the conductor pattern 8. The conductor layer 3 serves as the lead wiring 9.

再者,於透明電極10及引出配線9之圖案以外之導體層3中,已藉由圖2(b)所示之蝕刻將保護層7、低電阻化層5、密接層6及透明導體層4蝕刻。 Further, in the conductor layer 3 other than the patterns of the transparent electrode 10 and the lead wiring 9, the protective layer 7, the low-resistance layer 5, the adhesion layer 6, and the transparent conductor layer have been etched by the etching shown in FIG. 2(b). 4 etching.

藉此,如圖2(d)所示,獲得於光學調整膜24之上表面形成包括引出配線9及透明電極10之導體圖案8的透明電極基板1。 Thereby, as shown in FIG. 2(d), the transparent electrode substrate 1 including the lead pattern 9 and the conductor pattern 8 of the transparent electrode 10 is formed on the upper surface of the optical adjustment film 24.

並且,該透明電極基板1由於包括用易蝕刻材料形成於低電阻化層5之上表面之保護層7,故可容易地對包含在上表面形成保護層7之低電阻化層5的導體層3進行蝕刻而圖案化為所需形狀。 Further, since the transparent electrode substrate 1 includes the protective layer 7 formed on the upper surface of the low-resistance layer 5 with an easily etchable material, the conductor layer of the low-resistance layer 5 including the protective layer 7 on the upper surface can be easily formed. 3 etching is performed to pattern into a desired shape.

圖2(d)所示之透明電極基板1例如可用作觸控面板。 The transparent electrode substrate 1 shown in FIG. 2(d) can be used, for example, as a touch panel.

<觸控面板> <Touch Panel>

繼而,參照圖3及圖4對包括使用圖2(d)所示之透明電極基板1之觸控面板20的液晶顯示裝置30進行說明。 Next, a liquid crystal display device 30 including the touch panel 20 using the transparent electrode substrate 1 shown in FIG. 2(d) will be described with reference to FIGS. 3 and 4.

於圖3中,液晶顯示裝置30例如為觸控面板式行動電話,且包括:板狀之液晶顯示器(LCD,Liquid Crystal Display)模組14;偏光板 12,其置以間隔而設於LCD模組14上;觸控面板20,其設於偏光板12之上表面;及保護玻璃層11,其設於觸控面板20之上表面。 In FIG. 3, the liquid crystal display device 30 is, for example, a touch panel type mobile phone, and includes: a liquid crystal display (LCD) module 14; a polarizing plate. 12, which is disposed on the LCD module 14 at intervals; the touch panel 20 is disposed on the upper surface of the polarizing plate 12; and the protective glass layer 11 is disposed on the upper surface of the touch panel 20.

又,雖未圖示,於LCD模組14之下側設有電路基板及殼體等。 Further, although not shown, a circuit board, a casing, and the like are provided on the lower side of the LCD module 14.

又,於液晶顯示裝置30之左右方向及前後方向之中央部,LCD模組14與偏光板12之間為作為空氣層之間隙層13。再者,間隙層13係藉由於周端部配置為框狀之間隔件21而劃分。 Further, in the center portion of the liquid crystal display device 30 in the left-right direction and the front-rear direction, the gap between the LCD module 14 and the polarizing plate 12 is a gap layer 13 as an air layer. Further, the gap layer 13 is divided by the spacer 21 in which the circumferential end portion is arranged in a frame shape.

圖4如所示,觸控面板20包括2個透明電極基板1(詳細而言為將導體層3形成為導體圖案8之透明電極基板1)。 As shown in FIG. 4, the touch panel 20 includes two transparent electrode substrates 1 (in detail, the conductive layer 3 is formed as a transparent electrode substrate 1 of the conductor pattern 8).

具體而言,觸控面板20包括:沿厚度方向置以間隔而配置之複數個(2個)透明電極基板1;透明絕緣薄膜22,其介於此等透明電極基板1之間;及複數個(3個)黏著劑層15。 Specifically, the touch panel 20 includes a plurality of (two) transparent electrode substrates 1 disposed at intervals in the thickness direction, a transparent insulating film 22 interposed between the transparent electrode substrates 1 , and a plurality of (3) Adhesive layer 15.

於2個透明電極基板1之各者中,導體層3係朝向上側(厚度方向)配置。又,於2個透明電極基板1中,透明電極10之延伸方向係設定為於沿厚度方向投影時相互交叉(具體而言為正交),例如,上側之透明電極10係沿前後方向延伸,且沿左右方向相互置以間隔而配置,另一方面,下側之透明電極10係沿左右方向延伸,且沿前後方向相互隔以間隔而配置。 In each of the two transparent electrode substrates 1, the conductor layer 3 is disposed toward the upper side (thickness direction). Further, in the two transparent electrode substrates 1, the extending direction of the transparent electrodes 10 is set so as to intersect each other when intersecting in the thickness direction (specifically, orthogonal), and for example, the upper transparent electrode 10 extends in the front-rear direction. Further, the transparent electrodes 10 on the lower side are arranged in the left-right direction on the left and right sides, and are arranged at intervals in the front-rear direction.

透明絕緣薄膜22係使用與上述透明電極基板1中之絕緣基板2相同之材料及尺寸而形成。 The transparent insulating film 22 is formed using the same material and size as the insulating substrate 2 in the transparent electrode substrate 1.

黏著劑層15係設於下側之透明電極基板1與透明絕緣薄膜22之間、透明絕緣薄膜22與上側之透明電極基板1之間以及上側之透明電極基板1之上表面。 The adhesive layer 15 is provided between the lower transparent electrode substrate 1 and the transparent insulating film 22, between the transparent insulating film 22 and the upper transparent electrode substrate 1, and on the upper surface of the upper transparent electrode substrate 1.

於該液晶顯示裝置30中,當手指等接觸或靠近保護玻璃層11之上表面時,相較於未接觸或靠近之情形而產生靜電電容差,該靜電電容差作為檢測信號介以引出配線9傳輸至未圖示之電路基板。 In the liquid crystal display device 30, when a finger or the like contacts or approaches the upper surface of the cover glass layer 11, a difference in electrostatic capacitance occurs as compared with the case where it is not in contact or close to each other, and the electrostatic capacitance difference is used as a detection signal through the lead wiring 9. It is transferred to a circuit board (not shown).

另一方面,輸入信號係自至電路基板輸入至LCD模組14,從而 LCD模組14顯示圖像。操作者(或視認者)介以偏光板12、觸控面板20及保護玻璃層11視認該圖像。 On the other hand, the input signal is input to the LCD module 14 from the circuit substrate, thereby The LCD module 14 displays an image. The operator (or the viewer) views the image through the polarizing plate 12, the touch panel 20, and the cover glass layer 11.

並且,該液晶顯示裝置30由於具有包括導體圖案8之透明電極基板1,該導體圖案8係由得以高精度地圖案化之導體層3形成,故可實現可靠性之提高。 Further, since the liquid crystal display device 30 has the transparent electrode substrate 1 including the conductor pattern 8, the conductor pattern 8 is formed of the conductor layer 3 which is patterned with high precision, so that reliability can be improved.

<變化例> <variation>

於圖3及圖4之說明中已將本發明之圖像顯示裝置作為液晶顯示裝置30進行了說明,然而,雖未圖示,例如亦可將本發明之圖像顯示裝置用作有機電致發光裝置(Organic Electroluminescence Device,有機EL裝置)等。 Although the image display device of the present invention has been described as the liquid crystal display device 30 in the description of FIGS. 3 and 4, the image display device of the present invention can be used as an organic electro-electric image, for example. A light-emitting device (Organic Electroluminescence Device) or the like.

又,於以下各圖中,對於與圖1~圖4相同之構件係標附相同參照符號,並省略其詳細說明。 In the following drawings, the same components as those in FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof will be omitted.

於圖1(e)之實施形態中,係將導體層3僅設於絕緣基板2之上側(厚度方向之一側)然而,例如,如圖5所示,亦可設於絕緣基板2之兩側(上側及下側、厚度方向之一側及另一側)。 In the embodiment of FIG. 1(e), the conductor layer 3 is provided only on the upper side (one side in the thickness direction) of the insulating substrate 2. However, for example, as shown in FIG. 5, it may be provided on the insulating substrate 2 Side (upper side and lower side, one side in the thickness direction and the other side).

亦即,於圖5中,透明電極基板1包括:絕緣基板2;光學調整膜24,其分別形成於絕緣基板2之上表面及下表面;及導體層3,其形成於2個光學調整膜24之表面。 That is, in FIG. 5, the transparent electrode substrate 1 includes: an insulating substrate 2; optical adjustment films 24 respectively formed on the upper surface and the lower surface of the insulating substrate 2; and a conductor layer 3 formed on the two optical adjustment films The surface of 24.

絕緣基板2由2個光學調整膜24於厚度方向上夾持。 The insulating substrate 2 is sandwiched by two optical adjustment films 24 in the thickness direction.

2個導體層3於上側之光學調整膜24上係形成於上表面,並且形成於下側之光學調整膜24之下表面。 The two conductor layers 3 are formed on the upper surface of the optical adjustment film 24 on the upper surface, and are formed on the lower surface of the optical adjustment film 24 on the lower side.

下側之導體層3係積層於光學調整膜24之整個下表面。於下側導體層3中,在光學調整膜24下(厚度方向之另一側)依序積層有透明導體層4、密接層6、低電阻化層5及保護層7。 The conductor layer 3 on the lower side is laminated on the entire lower surface of the optical adjustment film 24. In the lower conductor layer 3, the transparent conductor layer 4, the adhesion layer 6, the low resistance layer 5, and the protective layer 7 are sequentially laminated under the optical adjustment film 24 (the other side in the thickness direction).

又,於圖5所示之透明電極基板1中,雖未圖示,可將導體層3形成為導體圖案8。 Further, in the transparent electrode substrate 1 shown in FIG. 5, the conductor layer 3 can be formed as the conductor pattern 8 although not shown.

於將此種透明電極基板1用作觸控面板20之情形時,可由1個透明電極基板1構成觸控面板20。上下兩側之導體圖案8中之透明電極10係形成為於沿厚度方向投影時相互交叉(具體而言為正交)之圖案。 When such a transparent electrode substrate 1 is used as the touch panel 20, the touch panel 20 can be constituted by one transparent electrode substrate 1. The transparent electrodes 10 in the conductor patterns 8 on the upper and lower sides are formed in a pattern intersecting each other (specifically, orthogonal) when projected in the thickness direction.

又,於圖1(e)之實施形態中,係將密接層6設於導體層3,然而,例如,如圖6(a)所示,亦可不設置密接層6而構成導體層3。 Further, in the embodiment of Fig. 1(e), the adhesion layer 6 is provided on the conductor layer 3. However, as shown in Fig. 6(a), for example, the conductor layer 3 may be formed without providing the adhesion layer 6.

於圖6(a)中,導體層3係由透明導體層4、低電阻化層5及保護層7形成。 In FIG. 6(a), the conductor layer 3 is formed of a transparent conductor layer 4, a low-resistance layer 5, and a protective layer 7.

低電阻化層5係直接形成於透明導體層4之整個上表面。 The low resistance layer 5 is formed directly on the entire upper surface of the transparent conductor layer 4.

又,如圖6(b)所示,亦可將圖6(a)所示之透明電極基板1之導體層3形成為包括引出配線9及透明電極10之導體圖案8。 Further, as shown in FIG. 6(b), the conductor layer 3 of the transparent electrode substrate 1 shown in FIG. 6(a) may be formed as a conductor pattern 8 including the lead wiring 9 and the transparent electrode 10.

於圖6(b)中,引出配線9包括透明導體層4、低電阻化層5及保護層7。 In FIG. 6(b), the lead wiring 9 includes a transparent conductor layer 4, a low resistance layer 5, and a protective layer 7.

為了獲得圖6(b)所示之透明電極基板1,如參照圖2(a)~圖2(d),首先,將第1抗蝕劑層17形成於保護層7之上表面,繼而,對自第1抗蝕劑層17露出之導體層3(透明導體層4、低電阻化層5及保護層7)進行蝕刻(圖案化),繼而,剝離第1抗蝕劑層17。然後,以被覆與引出配線9對應之導體層3且露出與透明電極10對應之導體層3之方式,將第2抗蝕劑層18形成於光學調整膜24上,然後,藉由蝕刻除去自第2抗蝕劑層18露出之保護層7及低電阻化層5。然後,除去第2抗蝕劑層18。 In order to obtain the transparent electrode substrate 1 shown in FIG. 6(b), as shown in FIGS. 2(a) to 2(d), first, the first resist layer 17 is formed on the upper surface of the protective layer 7, and then, The conductor layer 3 (the transparent conductor layer 4, the low resistance layer 5, and the protective layer 7) exposed from the first resist layer 17 is etched (patterned), and then the first resist layer 17 is peeled off. Then, the second resist layer 18 is formed on the optical adjustment film 24 so as to cover the conductor layer 3 corresponding to the lead wiring 9 and expose the conductor layer 3 corresponding to the transparent electrode 10, and then removed by etching. The protective layer 7 and the low-resistance layer 5 in which the second resist layer 18 is exposed. Then, the second resist layer 18 is removed.

較佳為如圖1(e)所示,將密接層6設為介於導體層3中之透明導體層4與低電阻化層5之間,進而,如圖2(d)所示,使密接層6介於引出配線9中之透明導體層4與低電阻化層5之間。藉此,可提高圖1(e)所示之導體層3中之透明導體層4與低電阻化層5之密接力,進而可提高圖2(d)所示之引出配線9中之透明導體層4與低電阻化層5之密接力。 Preferably, as shown in FIG. 1(e), the adhesion layer 6 is interposed between the transparent conductor layer 4 and the low resistance layer 5 in the conductor layer 3, and further, as shown in FIG. 2(d), The adhesion layer 6 is interposed between the transparent conductor layer 4 and the low resistance layer 5 in the lead wiring 9. Thereby, the adhesion between the transparent conductor layer 4 and the low-resistance layer 5 in the conductor layer 3 shown in FIG. 1(e) can be improved, and the transparent conductor in the lead-out wiring 9 shown in FIG. 2(d) can be improved. The adhesion between the layer 4 and the low-resistance layer 5 is good.

於圖1(e)及圖2(d)之實施形態中,係於絕緣基板2之上表面設置光學調整膜24,然而,例如,如圖7及圖8所示,亦可不設置光學調整膜 24而於絕緣基板2之上表面直接形成透明導體層4。 In the embodiment of FIGS. 1(e) and 2(d), the optical adjustment film 24 is provided on the upper surface of the insulating substrate 2. However, for example, as shown in FIGS. 7 and 8, the optical adjustment film may not be provided. 24, a transparent conductor layer 4 is directly formed on the upper surface of the insulating substrate 2.

自實現光學特性之提高之觀點考慮,較佳為如圖1(e)及圖2(d)所示,將光學調整膜24設於絕緣基板2之上表面。 From the viewpoint of improving the optical characteristics, it is preferable to provide the optical adjustment film 24 on the upper surface of the insulating substrate 2 as shown in Figs. 1(e) and 2(d).

實施例 Example

以下示出實施例及比較例而更具體地說明本發明。再者,本發明不受任何實施例及比較例限定。 The present invention will be more specifically described below by showing examples and comparative examples. Further, the present invention is not limited by any examples and comparative examples.

<透明電極基板之製作> <Production of Transparent Electrode Substrate> 實施例1 Example 1

準備包含PET(玻璃轉移溫度:180℃以上)之厚度為50μm之絕緣基板(參照圖1(a))。繼而,將包含SiO2系材料(玻璃轉移溫度:200℃以上)之厚度為25nm之光學調整膜積層於絕緣基板之整個上表面。 An insulating substrate having a thickness of 50 μm including PET (glass transition temperature: 180 ° C or higher) was prepared (see FIG. 1( a )). Then, an optical adjustment film having a thickness of 25 nm including a SiO 2 -based material (glass transition temperature: 200 ° C or higher) was laminated on the entire upper surface of the insulating substrate.

繼而,將導體層形成於絕緣基板(光學調整膜)上(參照圖1(b)~圖1(e))。 Then, the conductor layer is formed on an insulating substrate (optical adjustment film) (see FIGS. 1(b) to 1(e)).

具體而言,首先藉由濺鍍將包含ITO之透明導體層形成於光學調整膜之上表面。透明導體層之厚度為25nm。藉此準備包括絕緣基板、光學調整膜及透明導體層之積層板。 Specifically, a transparent conductor layer containing ITO is first formed on the upper surface of the optical adjustment film by sputtering. The thickness of the transparent conductor layer was 25 nm. Thereby, a laminate including an insulating substrate, an optical adjustment film, and a transparent conductor layer is prepared.

繼而,將密接層形成於透明導體層之上表面(參照圖1(c))。 Then, an adhesion layer is formed on the upper surface of the transparent conductor layer (refer to FIG. 1(c)).

具體而言,首先,將積層板於45℃之中性脫脂液中浸漬5分鐘,繼而,於25℃之過硫酸鈉水溶液中浸漬5分鐘,進行軟蝕刻。 Specifically, first, the laminate was immersed in a neutral degreasing liquid at 45 ° C for 5 minutes, and then immersed in a sodium persulfate aqueous solution at 25 ° C for 5 minutes to perform soft etching.

繼而,藉由將積層板於包含鈀之25℃之觸媒液中浸漬5分鐘,而於透明導體層之表面積層觸媒皮膜。 Then, the laminate was immersed in a contact liquid containing palladium at 25 ° C for 5 minutes to form a catalyst film on the surface layer of the transparent conductor layer.

另行調製含有硫酸鎳及次磷酸(還原劑)之無電解電鍍液。於無電解電鍍液中,係將鎳陽離子(Ni2+)之質量比率調整為2.5質量%,將次磷酸陰離子(HPO2 -)之質量比率調整為2質量%。又,無電解電鍍液之pH為4.6。 An electroless plating solution containing nickel sulfate and hypophosphorous acid (reducing agent) is separately prepared. In the electroless plating solution, the mass ratio of nickel cation (Ni 2+ ) was adjusted to 2.5% by mass, and the mass ratio of hypophosphorous anion (HPO 2 - ) was adjusted to 2% by mass. Further, the pH of the electroless plating solution was 4.6.

然後,將於透明導體層之表面積層有觸媒皮膜之積層板於70℃之 無電解電鍍液中浸漬5分鐘。藉此,將包含含有鎳及磷之組合物之厚度為500nm之密接層(介隔觸媒皮膜)形成於透明導體層之整個上表面。 Then, a laminate having a catalyst film on the surface layer of the transparent conductor layer is at 70 ° C Immersion in electroless plating bath for 5 minutes. Thereby, an adhesive layer (intervening catalyst film) having a thickness of 500 nm containing a composition containing nickel and phosphorus was formed on the entire upper surface of the transparent conductor layer.

然後,對密接層進行1分鐘水洗。 Then, the adhesive layer was washed with water for 1 minute.

繼而,將低電阻化層形成於密接層之上表面(參照圖1(d))。 Then, a low-resistance layer is formed on the upper surface of the adhesion layer (see FIG. 1(d)).

即,將形成有密接層之積層板浸漬於含有添加劑之硫酸銅電鍍液中,於平均電流密度1A/dm2下進行電解鍍銅1分20秒鐘。藉此將包含銅之厚度為200nm之低電阻化層形成於密接層之整個上表面。 That is, the laminated plate on which the adhesion layer was formed was immersed in a copper sulfate plating solution containing an additive, and electrolytic copper plating was performed for 1 minute and 20 seconds at an average current density of 1 A/dm 2 . Thereby, a low-resistance layer containing copper having a thickness of 200 nm was formed on the entire upper surface of the adhesion layer.

然後,將包含含有鎳及磷之組合物之厚度為30nm之保護層形成於低電阻化層之上表面(參照圖1(e))。 Then, a protective layer having a thickness of 30 nm containing a composition containing nickel and phosphorus was formed on the upper surface of the low-resistance layer (refer to FIG. 1(e)).

根據密接層之形成方法形成低電阻化層。 A low resistance layer is formed according to the formation method of the adhesion layer.

藉此獲得於光學調整膜上依序積層有透明導體層、密接層、低電阻化層及保護層之透明電極基板。 Thereby, a transparent electrode substrate in which a transparent conductor layer, an adhesion layer, a low resistance layer, and a protective layer are sequentially laminated on the optical adjustment film is obtained.

實施例2~9及比較例1、2 Examples 2 to 9 and Comparative Examples 1, 2

除了按照表1及表2之記載變更密接層、低電阻化層及保護層之形成條件等之外,以與實施例1相同之方式進行處理,獲得透明電極基板。 The transparent electrode substrate was obtained in the same manner as in Example 1 except that the conditions for forming the adhesion layer, the low resistance layer, and the protective layer were changed as described in Tables 1 and 2.

與實施例1相比之變更點之詳情將於以下記載。 Details of the change point compared with the first embodiment will be described below.

實施例3係藉由電解鎳用鎳形成保護層。電解鎳之詳細條件如下所示。 In Example 3, a protective layer was formed of nickel by electrolytic nickel. The detailed conditions for electrolytic nickel are as follows.

電解鎳電鍍液:包含硫酸鎳、氯化鎳、硼酸及添加劑。 Electrolytic nickel plating solution: comprising nickel sulfate, nickel chloride, boric acid and additives.

電解條件:0.5A/dm2 Electrolysis conditions: 0.5A/dm 2

時間:30秒鐘 Time: 30 seconds

溫度:40℃ Temperature: 40 ° C

實施例4係藉由無電解鍍銅用銅形成低電阻化層。無電解鍍銅之詳細條件如下所示。 In the fourth embodiment, a low-resistance layer was formed of copper by electroless copper plating. The detailed conditions of electroless copper plating are as follows.

電解銅電鍍液:包含硫酸銅及福馬林。 Electrolytic copper plating solution: contains copper sulfate and formalin.

時間:15秒鐘 Time: 15 seconds

溫度40℃ Temperature 40 ° C

實施例5係藉由濺鍍用銅形成密接層。 In Example 5, an adhesion layer was formed by copper for sputtering.

實施例7~9係使用含有硫酸鎳及硼之無電解電鍍液,用包含鎳及硼之組合物形成密接層。實施例7~9之各者之皮膜中之硼濃度係根據電鍍液中之二甲胺硼烷濃度與硫酸鎳濃度之比、pH及添加劑等適當調整。 In Examples 7 to 9, an electroless plating solution containing nickel sulfate and boron was used, and an adhesive layer was formed using a composition containing nickel and boron. The boron concentration in the film of each of Examples 7 to 9 was appropriately adjusted depending on the ratio of the concentration of dimethylamine borane to the concentration of nickel sulfate in the plating solution, pH, additives, and the like.

比較例1係藉由無電解鍍金用金形成保護層。無電解鍍金之詳細條件如下所示。 In Comparative Example 1, a protective layer was formed by gold electroless gold plating. The detailed conditions for electroless gold plating are as follows.

包含氰化金鉀、氰化鉀及添加劑之電鍍液 Plating solution containing potassium cyanide, potassium cyanide and additives

溫度:80℃ Temperature: 80 ° C

時間:3分鐘 Time: 3 minutes

厚度:30nm Thickness: 30nm

比較例2未形成保護層。 Comparative Example 2 did not form a protective layer.

<圖像顯示裝置之製作> <Production of Image Display Device>

關於實施例1~5以及比較例2及5之透明電極基板,係將導體層加工為導體圖案(參照圖2(a)~圖2(d)),然後,根據上述實施形態製作將透明電極基板用作觸控面板之液晶顯示裝置。 In the transparent electrode substrates of Examples 1 to 5 and Comparative Examples 2 and 5, the conductor layer was processed into a conductor pattern (see FIGS. 2( a ) to 2 ( d )), and then a transparent electrode was produced according to the above embodiment. The substrate is used as a liquid crystal display device of a touch panel.

另一方面,關於比較例1之透明電極基板,為了將導體層加工為導體圖案亦嘗試了蝕刻。然而,未能將導體層蝕刻(圖案化)。 On the other hand, in the transparent electrode substrate of Comparative Example 1, etching was attempted in order to process the conductor layer into a conductor pattern. However, the conductor layer could not be etched (patterned).

<評價> <evaluation> ‧密接力 ‧Intimate

對形成保護層前(對於比較例2而言係所獲得之透明電極基板)之透明電極基板實施密接力試驗(膠帶十字切割(Tape Cross Cut)試驗)。 The adhesion test (Tape Cross Cut test) was performed on the transparent electrode substrate before the formation of the protective layer (the transparent electrode substrate obtained in Comparative Example 2).

即,使用截切刀,於上述透明電極基板之導體層之1cm見方之區 域,以1mm之間隔置入沿前後方向及左右方向之縫隙。然後,將膠帶貼附至導體層,並將於自導體層剝離膠帶時低電阻化層未自透明導體層剝離之情形評價為「○」,將低電阻化層自透明導體層剝離之情形評價為「×」。 That is, using a cutting blade, the 1 cm square of the conductor layer of the transparent electrode substrate In the field, slits in the front-rear direction and the left-right direction are placed at intervals of 1 mm. Then, the tape was attached to the conductor layer, and the case where the low-resistance layer was not peeled off from the transparent conductor layer when the tape was peeled off from the conductor layer was evaluated as "○", and the case where the low-resistance layer was peeled off from the transparent conductor layer was evaluated. It is "X".

‧電阻值(表面電阻) ‧ resistance value (surface resistance)

使用電阻率計(LORESTA AX MCP-370型三菱化學ANALYTECH製)測定實施例1~5、9及比較例1、2之透明電極基板之導體層之表面電阻。 The surface resistance of the conductor layers of the transparent electrode substrates of Examples 1 to 5 and 9 and Comparative Examples 1 and 2 was measured using a resistivity meter (LORESTA AX MCP-370 type manufactured by Mitsubishi Chemical Corporation).

‧防銹性(腐蝕性) ‧Anti-rust (corrosive)

將包括實施例1~5、9及比較例1、2之透明電極基板之圖像顯示裝置投入至85℃、85%之恆溫高濕器中500小時。然後,將引出配線無變色腐蝕者評價為「○」,將發生變色腐蝕者評價為「×」。 The image display device including the transparent electrode substrates of Examples 1 to 5 and 9 and Comparative Examples 1 and 2 was placed in an 85 ° C, 85% thermostat humidifier for 500 hours. Then, the lead wire was evaluated as "○" in the case of no discoloration corrosion, and the "x" was evaluated as the discoloration corrosion.

‧磷含有比率及硼含有比率 ‧ Phosphorus content ratio and boron content ratio

密接層及保護層中之磷含有比率或硼含有比率係藉由溶解皮膜並進行感應耦合電漿(ICP,Inductively Coupled Plasma)測定而算出。 The phosphorus content ratio or the boron content ratio in the adhesion layer and the protective layer is calculated by dissolving the film and measuring it by inductively coupled plasma (ICP).

其結果分別示於密接層欄及保護層欄中。 The results are shown in the column of the close layer and the column of the protective layer.

表中「%」係表示「質量%」。 "%" in the table indicates "% by mass".

再者,上述說明係作為本發明之例示之實施形態而提供,其僅為例示,不可作限定性的解釋。對本領域技術人員而言較為明確之本發明之變化例係包含於下述專利申請範圍之內。 In addition, the above description is provided as an exemplified embodiment of the present invention, and is merely illustrative and is not to be construed as limiting. Variations of the invention that are apparent to those skilled in the art are included in the scope of the following patent applications.

1‧‧‧透明電極基板 1‧‧‧Transparent electrode substrate

2‧‧‧絕緣基板 2‧‧‧Insert substrate

3‧‧‧導體層 3‧‧‧Conductor layer

4‧‧‧透明導體層 4‧‧‧Transparent conductor layer

5‧‧‧低電阻化層 5‧‧‧Low-resisting layer

6‧‧‧密接層 6‧‧ ‧ close layer

7‧‧‧保護層 7‧‧‧Protective layer

19‧‧‧積層板 19‧‧‧Laminated boards

24‧‧‧光學調整膜 24‧‧‧Optical adjustment film

Claims (12)

一種透明電極基板,其特徵在於包括:絕緣基板;及導體層,其形成於上述絕緣基板之至少厚度方向之一側;且上述導體層包括:透明導體層,其形成於上述絕緣基板之上述厚度方向之一側;低電阻化層,其形成於上述透明導體層之上述厚度方向之一側,用於降低上述導體層之電阻;及保護層,其係由易蝕刻材料形成於上述低電阻化層之上述厚度方向之一表面。 A transparent electrode substrate, comprising: an insulating substrate; and a conductor layer formed on one side of at least one of thickness directions of the insulating substrate; and the conductor layer includes: a transparent conductor layer formed on the thickness of the insulating substrate One side of the direction; a low-resistance layer formed on one side of the thickness direction of the transparent conductor layer for reducing the electric resistance of the conductor layer; and a protective layer formed of an easily etchable material in the low resistance One of the above thickness directions of the layer. 如請求項1之透明電極基板,其中上述易蝕刻材料係選自鎳、錫及鎳銅合金之至少1種金屬。 The transparent electrode substrate of claim 1, wherein the etchable material is at least one metal selected from the group consisting of nickel, tin, and nickel-copper alloy. 如請求項1之透明電極基板,其中上述透明導體層係用氧化銦錫形成,且上述低電阻化層係用選自由銅、銀及金所組成之群之至少1種金屬形成。 The transparent electrode substrate according to claim 1, wherein the transparent conductor layer is formed of indium tin oxide, and the low resistance layer is formed of at least one metal selected from the group consisting of copper, silver, and gold. 如請求項1之透明電極基板,其中上述透明導體層係形成於上述絕緣基板之上述厚度方向之一側整個表面,上述低電阻化層係形成於上述透明導體層之上述厚度方向之一側整個表面,且上述保護層係形成於上述低電阻化層之上述厚度方向之一整個表面。 The transparent electrode substrate according to claim 1, wherein the transparent conductor layer is formed on one surface of the insulating substrate on one side in the thickness direction, and the low resistance layer is formed on one side of the thickness direction of the transparent conductor layer. The surface is formed on the entire surface of the low-resistance layer in one of the thickness directions. 如請求項1之透明電極基板,其中 上述導體層係於上述絕緣基板上形成為導體圖案。 The transparent electrode substrate of claim 1, wherein The conductor layer is formed as a conductor pattern on the insulating substrate. 如請求項5之透明電極基板,其中上述導體圖案包括:引出配線,其包含上述導體層;及透明電極,其與上述引出配線相連續地形成,且包含上述透明導體層。 The transparent electrode substrate of claim 5, wherein the conductor pattern comprises: a lead wire including the conductor layer; and a transparent electrode formed continuously with the lead wire and including the transparent conductor layer. 一種透明電極基板之製造方法,其特徵在於包括如下步驟:準備步驟,其係準備包含絕緣基板及積層於上述絕緣基板之至少厚度方向之一側之透明導體層的積層板;低電阻化步驟,其係將低電阻化層積層於上述透明導體層之上述厚度方向之一側;以及保護步驟,其係由易蝕刻材料於上述低電阻化層之上述厚度方向之一表面形成保護層。 A method for producing a transparent electrode substrate, comprising the steps of: preparing a laminate comprising an insulating substrate and a transparent conductor layer laminated on at least one of thickness directions of the insulating substrate; and a step of reducing resistance The low-resistance layer is laminated on one side of the thickness direction of the transparent conductor layer, and the protective step is to form a protective layer on one surface of the low-resistance layer in the thickness direction by an easy-etching material. 如請求項7之透明電極基板之製造方法,其於上述保護步驟後進而包括圖案化步驟,該圖案化步驟係對包含上述透明導體層、上述低電阻化層及上述保護層之導體層進行蝕刻而形成導體圖案。 The method for manufacturing a transparent electrode substrate according to claim 7, further comprising a patterning step of etching the conductor layer including the transparent conductor layer, the low resistance layer and the protective layer after the protecting step A conductor pattern is formed. 如請求項8之透明電極基板之製造方法,其進而包括如下步驟:藉由自上述導體圖案之一部分除去上述保護層及上述低電阻化層而由上述透明導體層形成透明電極,並且將與上述導體圖案之剩餘部分對應之上述導體層作為引出配線。 The method for producing a transparent electrode substrate according to claim 8, further comprising the step of forming a transparent electrode from the transparent conductor layer by partially removing the protective layer and the low resistance layer from one of the conductor patterns, and The conductor layer corresponding to the remaining portion of the conductor pattern serves as the lead wiring. 一種圖像顯示裝置,其特徵在於包括透明電極基板,上述透明電極基板包括:絕緣基板;及導體層,其形成於上述絕緣基板之至少厚度方向之一側;且上述導體層包括: 透明導體層,其形成於上述絕緣基板之上述厚度方向之一側;低電阻化層,其形成於上述透明導體層之上述厚度方向之一側,用於降低上述導體層之電阻;及保護層,其係由易蝕刻材料形成於上述低電阻化層之上述厚度方向之一表面。 An image display device comprising: a transparent electrode substrate, wherein the transparent electrode substrate comprises: an insulating substrate; and a conductor layer formed on one side of at least one of thickness directions of the insulating substrate; and the conductor layer comprises: a transparent conductor layer formed on one side of the thickness direction of the insulating substrate; and a low resistance layer formed on one side of the thickness direction of the transparent conductor layer for reducing resistance of the conductor layer; and a protective layer It is formed of an easily etchable material on one surface of the low-resistance layer in the thickness direction. 如請求項10之圖像顯示裝置,其中上述透明電極基板為觸控面板。 The image display device of claim 10, wherein the transparent electrode substrate is a touch panel. 如請求項10之圖像顯示裝置,其為液晶顯示裝置。 An image display device according to claim 10, which is a liquid crystal display device.
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