TWI691379B - 用於修改基板厚度輪廓的研磨系統、研磨工具及方法 - Google Patents

用於修改基板厚度輪廓的研磨系統、研磨工具及方法 Download PDF

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Publication number
TWI691379B
TWI691379B TW104122940A TW104122940A TWI691379B TW I691379 B TWI691379 B TW I691379B TW 104122940 A TW104122940 A TW 104122940A TW 104122940 A TW104122940 A TW 104122940A TW I691379 B TWI691379 B TW I691379B
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TW
Taiwan
Prior art keywords
substrate
polishing
polishing pad
pad
grinding
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TW104122940A
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English (en)
Chinese (zh)
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TW201611946A (en
Inventor
古魯薩米傑
陳宏志
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from US14/334,948 external-priority patent/US9662762B2/en
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201611946A publication Critical patent/TW201611946A/zh
Application granted granted Critical
Publication of TWI691379B publication Critical patent/TWI691379B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
TW104122940A 2014-07-18 2015-07-15 用於修改基板厚度輪廓的研磨系統、研磨工具及方法 TWI691379B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462026269P 2014-07-18 2014-07-18
US14/334,948 US9662762B2 (en) 2014-07-18 2014-07-18 Modifying substrate thickness profiles
US14/334,948 2014-07-18
US62/026,269 2014-07-18

Publications (2)

Publication Number Publication Date
TW201611946A TW201611946A (en) 2016-04-01
TWI691379B true TWI691379B (zh) 2020-04-21

Family

ID=55078939

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104122940A TWI691379B (zh) 2014-07-18 2015-07-15 用於修改基板厚度輪廓的研磨系統、研磨工具及方法

Country Status (5)

Country Link
JP (1) JP6778176B2 (enrdf_load_stackoverflow)
KR (1) KR102376928B1 (enrdf_load_stackoverflow)
CN (1) CN106463384B (enrdf_load_stackoverflow)
TW (1) TWI691379B (enrdf_load_stackoverflow)
WO (1) WO2016010865A1 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109155249B (zh) * 2016-03-25 2023-06-23 应用材料公司 局部区域研磨系统以及用于研磨系统的研磨垫组件
US10562148B2 (en) * 2016-10-10 2020-02-18 Applied Materials, Inc. Real time profile control for chemical mechanical polishing
SG11201902651QA (en) * 2016-10-18 2019-05-30 Ebara Corp Substrate processing control system, substrate processing control method, and program
KR102629679B1 (ko) * 2018-11-09 2024-01-29 주식회사 케이씨텍 연마 장치용 캐리어 헤드 및 이에 사용되는 멤브레인
TWI834195B (zh) 2019-04-18 2024-03-01 美商應用材料股份有限公司 Ｃｍｐ期間基於溫度的原位邊緣不對稱校正的電腦可讀取儲存媒體
US11282755B2 (en) * 2019-08-27 2022-03-22 Applied Materials, Inc. Asymmetry correction via oriented wafer loading
TWI826280B (zh) 2019-11-22 2023-12-11 美商應用材料股份有限公司 在拋光墊中使用溝槽的晶圓邊緣不對稱校正
CN111975469A (zh) * 2020-08-28 2020-11-24 上海华力微电子有限公司 化学机械研磨的方法及研磨系统
US20240326195A1 (en) * 2023-03-30 2024-10-03 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-Blade Trimming and Dressing Tool

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6764387B1 (en) * 2003-03-07 2004-07-20 Applied Materials Inc. Control of a multi-chamber carrier head
US6913518B2 (en) * 2003-05-06 2005-07-05 Applied Materials, Inc. Profile control platen
TWI275451B (en) * 2005-01-11 2007-03-11 Asia Ic Mic Process Inc Measurement of thickness profile and elastic modulus profile of polishing pad
US20110239876A1 (en) * 2001-07-25 2011-10-06 Round Rock Research, Llc Differential pressure application apparatus for use in polishing layers of semiconductor device structures and methods
US20140113533A1 (en) * 2012-10-18 2014-04-24 Applied Materials, Inc. Damper for polishing pad conditioner
US20140141694A1 (en) * 2012-11-21 2014-05-22 Applied Materials, Inc. In-Sequence Spectrographic Sensor

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333891A (ja) * 1993-05-24 1994-12-02 Sony Corp 基板研磨装置および基板保持台
US5938504A (en) * 1993-11-16 1999-08-17 Applied Materials, Inc. Substrate polishing apparatus
US5558563A (en) * 1995-02-23 1996-09-24 International Business Machines Corporation Method and apparatus for uniform polishing of a substrate
US6267659B1 (en) * 2000-05-04 2001-07-31 International Business Machines Corporation Stacked polish pad
JP2002246346A (ja) * 2001-02-14 2002-08-30 Hiroshima Nippon Denki Kk 化学機械研磨装置
US20020164926A1 (en) * 2001-05-07 2002-11-07 Simon Mark G. Retainer ring and method for polishing a workpiece
US7198548B1 (en) * 2005-09-30 2007-04-03 Applied Materials, Inc. Polishing apparatus and method with direct load platen
US8858300B2 (en) * 2010-02-09 2014-10-14 International Business Machines Corporation Applying different pressures through sub-pad to fixed abrasive CMP pad
CN102884612B (zh) * 2011-01-03 2017-02-15 应用材料公司 压力控制的抛光压板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110239876A1 (en) * 2001-07-25 2011-10-06 Round Rock Research, Llc Differential pressure application apparatus for use in polishing layers of semiconductor device structures and methods
US6764387B1 (en) * 2003-03-07 2004-07-20 Applied Materials Inc. Control of a multi-chamber carrier head
US6913518B2 (en) * 2003-05-06 2005-07-05 Applied Materials, Inc. Profile control platen
TWI275451B (en) * 2005-01-11 2007-03-11 Asia Ic Mic Process Inc Measurement of thickness profile and elastic modulus profile of polishing pad
US20140113533A1 (en) * 2012-10-18 2014-04-24 Applied Materials, Inc. Damper for polishing pad conditioner
US20140141694A1 (en) * 2012-11-21 2014-05-22 Applied Materials, Inc. In-Sequence Spectrographic Sensor

Also Published As

Publication number Publication date
KR102376928B1 (ko) 2022-03-18
JP2017527107A (ja) 2017-09-14
CN106463384A (zh) 2017-02-22
KR20170034404A (ko) 2017-03-28
TW201611946A (en) 2016-04-01
JP6778176B2 (ja) 2020-10-28
CN106463384B (zh) 2020-03-17
WO2016010865A1 (en) 2016-01-21

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