TWI690917B - Pixel array substrate - Google Patents
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- TWI690917B TWI690917B TW108108515A TW108108515A TWI690917B TW I690917 B TWI690917 B TW I690917B TW 108108515 A TW108108515 A TW 108108515A TW 108108515 A TW108108515 A TW 108108515A TW I690917 B TWI690917 B TW I690917B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
Abstract
Description
本發明是有關於一種半導體基板,且特別是有關於一種畫素陣列基板。 The invention relates to a semiconductor substrate, and in particular to a pixel array substrate.
顯示器的應用日益廣泛,舉凡家用的視聽娛樂、公共場合的訊息顯示看板、電競用的顯示器及可攜式電子產品都可見其蹤跡。為了使用方便,顯示器多具有觸控功能。具有觸控及顯示功能的電子裝置稱為觸控顯示裝置。一般而言,觸控顯示裝置可分為外掛式(out cell)、晶胞上式(on cell)及內嵌式(In-cell)。內嵌式觸控顯示裝置具有易薄型化的優勢,因此,近幾年逐漸成為觸控顯示裝置的主流。 The application of the display is becoming more and more widespread, such as home audio-visual entertainment, public information display boards, e-sports displays and portable electronic products are all visible. For ease of use, the display has touch functions. Electronic devices with touch and display functions are called touch display devices. In general, touch display devices can be divided into out-cell (on cell), on-cell (on cell), and in-cell (In-cell). The in-cell touch display device has the advantage of being easy to be thin, and therefore, it has gradually become the mainstream of touch display devices in recent years.
內嵌式觸控顯示裝置包括具有畫素、資料線及掃描線的畫素陣列基板以及整合在畫素陣列基板中的觸控走線。為了將觸控走線整合在畫素陣列基板中的觸控走線,大多使用另一道工序製作觸控走線,造成畫素陣列基板的製程繁多。此外,觸控走線多設置於資料線上方,觸控走線與資料線之間的耦合電容大,影響觸控功能。 The in-cell touch display device includes a pixel array substrate with pixels, data lines and scan lines, and touch traces integrated in the pixel array substrate. In order to integrate the touch traces into the touch traces in the pixel array substrate, most of them use another process to make the touch traces, resulting in a variety of processes for the pixel array substrate. In addition, the touch traces are mostly arranged above the data lines, and the coupling capacitance between the touch traces and the data lines is large, which affects the touch function.
本發明提供一種畫素陣列基板,製造工序少且性能佳。 The present invention provides a pixel array substrate with few manufacturing processes and good performance.
本發明的畫素陣列基板,包括基底、至少一畫素以及觸控走線。至少一畫素設置於基底上。至少一畫素的每一者包括薄膜電晶體、資料線、掃描線、導電圖案、畫素電極及共用電極。薄膜電晶體具有閘極、半導體圖案、設置於閘極與半導體圖案之間的閘絕緣層、源極及汲極。資料線電性連接至薄膜電晶體的源極。掃描線電性連接至薄膜電晶體的閘極。導電圖案電性連接至薄膜電晶體的汲極,其中閘絕緣層設置於導電圖案上。畫素電極電性連接至導電圖案,且設置於閘絕緣層與基底之間。共用電極設置於閘絕緣層上。觸控走線電性連接至共用電極。特別是,觸控走線跨越畫素的導電圖案。 The pixel array substrate of the present invention includes a substrate, at least one pixel and touch traces. At least one pixel is disposed on the substrate. Each of the at least one pixel includes thin film transistors, data lines, scanning lines, conductive patterns, pixel electrodes, and common electrodes. The thin film transistor has a gate electrode, a semiconductor pattern, a gate insulating layer provided between the gate electrode and the semiconductor pattern, a source electrode, and a drain electrode. The data line is electrically connected to the source of the thin film transistor. The scanning line is electrically connected to the gate electrode of the thin film transistor. The conductive pattern is electrically connected to the drain electrode of the thin film transistor, and the gate insulating layer is disposed on the conductive pattern. The pixel electrode is electrically connected to the conductive pattern, and is disposed between the gate insulating layer and the substrate. The common electrode is arranged on the gate insulating layer. The touch trace is electrically connected to the common electrode. In particular, the touch trace crosses the pixel's conductive pattern.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.
100、100A:畫素陣列基板 100, 100A: pixel array substrate
110:基底 110: base
121:閘極 121: Gate
122:導電圖案 122: conductive pattern
123:共用線 123: shared line
130:畫素電極 130: pixel electrode
140:閘絕緣層 140: gate insulation
140a、140b、140c、140d、170b、170d:接觸窗 140a, 140b, 140c, 140d, 170b, 170d: contact window
150:半導體圖案 150: semiconductor pattern
161:源極 161: Source
162:汲極 162: Jiji
163:觸控走線 163: Touch trace
170:介電層 170: dielectric layer
180:共用電極 180: common electrode
180a:狹縫 180a: slit
181:主要部 181: Main Department
182:延伸部 182: Extension
190:驅動晶片 190: driver chip
d1、d2:方向 d1, d2: direction
DL:資料線 DL: data cable
PX、PX1、PX2:畫素 PX, PX1, PX2: pixels
R:局部 R: local
SP:觸控感測墊 SP: Touch sensing pad
SL:掃描線 SL: Scan line
T:薄膜電晶體 T: thin film transistor
I-I’、Π-Π’:剖線 I-I’, Π-Π’: section line
圖1為本發明一實施例之畫素陣列基板的上視示意圖。 FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention.
圖2為本發明第一實施例之畫素陣列基板100之局部R的放大示意圖。
2 is an enlarged schematic view of a part R of the
圖3為本發明第一實施例之畫素陣列基板100之剖面示意圖。
3 is a schematic cross-sectional view of the
圖4為本發明第二實施例之畫素陣列基板100A之局部R的
放大示意圖。
4 is a partial R of the
圖5為本發明第二實施例之畫素陣列基板100A之剖面示意圖。
5 is a schematic cross-sectional view of a
應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件“上”或“連接到”另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接”可以指物理及/或電性連接。再者,“電性連接”或“耦合”係可為二元件間存在其它元件。 It should be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “connected to” another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, the "electrically connected" or "coupled" system may be that there are other elements between the two elements.
本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,“約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。 As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable deviation range for a particular value determined by one of ordinary skill in the art, taking into account the measurements and A certain amount of measurement-related errors (ie, measurement system limitations). For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately", or "substantially" can be based on optical properties, etching properties, or other properties to select a more acceptable range of deviation or standard deviation, and not one standard deviation can be applied to all properties .
除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些 術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。 Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It will be further understood that such as those defined in commonly used dictionaries Terms should be interpreted as having a meaning consistent with their meaning in the context of the related art and the present invention, and will not be interpreted as an idealized or excessively formal meaning unless explicitly defined as such herein.
圖1為本發明一實施例之畫素陣列基板的上視示意圖。 FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention.
圖2為本發明第一實施例之畫素陣列基板100之局部R的放大示意圖。圖2對應圖1之畫素陣列基板100的局部R。
2 is an enlarged schematic view of a part R of the
圖3為本發明第一實施例之畫素陣列基板100之剖面示意圖。圖3對應圖2的剖線I-I’及剖線Π-Π’。
3 is a schematic cross-sectional view of the
圖1繪示畫素陣列基板100的基底110、觸控感測墊SP、觸控走線163及驅動晶片190,而省略畫素陣列基板100的其它構件;被圖1省略之畫素陣列基板100的其它構件繪於圖2及圖3。此外,圖2省略圖3之多個接觸窗140a、140b、170b、140c、140d、170d。
1 shows the
請參照圖1、圖2及圖3,畫素陣列基板100包括基底110及設置於基底110上的多個畫素PX。基底110主要是用來承載畫素陣列基板100的元件之用。舉例而言,在本實施例中,基底110的材質可以是玻璃、石英、有機聚合物、或是不透光/反射材料(例如:晶圓、陶瓷、或其它可適用的材料)、或是其它可適用的材料。
Referring to FIGS. 1, 2 and 3, the
每一畫素PX包括薄膜電晶體T、資料線DL及掃描線SL。薄膜電晶體T具有閘極121、半導體圖案150、設置於閘極121與半導體圖案150之間的閘絕緣層140、源極161與汲極162。掃描線SL電性連接至薄膜電晶體T的閘極121。資料線DL電性
連接至薄膜電晶體T的源極161。源極161和汲極162分別電性連接至半導體圖案150的不同兩區。
Each pixel PX includes a thin film transistor T, a data line DL, and a scan line SL. The thin film transistor T has a
在本實施例中,閘極121可位於半導體圖案150的下方,而薄膜電晶體T可為底部閘極型電晶體。然而,本發明不限於此,根據其它實施例,薄膜電晶體T也可以是其它型式的電晶體。舉例而言,在另一實施例中,閘極121也可位於半導體圖案150的上方,而薄膜電晶體T也可以是頂部閘極型電晶體。
In this embodiment, the
畫素PX還包括導電圖案122。閘絕緣層140設置於導電圖案122上。導電圖案122設置於閘絕緣層140與基底110之間。薄膜電晶體T的汲極162電性連接至導電圖案122。具體而言,在本實施例中,閘絕緣層140具有接觸窗140a,而薄膜電晶體T的汲極162透過接觸窗140a電性連接至導電圖案122。
The pixel PX further includes a
畫素PX還包括畫素電極130,電性連接至導電圖案122。畫素電極130透過導電圖案122電性連接至薄膜電晶體T的汲極162。特別是,畫素電極130設置於閘絕緣層140與基底110之間。
The pixel PX further includes a
舉例而言,在本實施例中,可選擇性地依序形成導電圖案122、畫素電極130及閘絕緣層140。部分的畫素電極130可直接設置於導電圖案122上,以使畫素電極130與導電圖案122電性連接。在本實施例中,部分的畫素電極130可選擇性地設置於閘絕緣層140與導電圖案122之間,但本發明不以此為限。
For example, in this embodiment, the
在本實施例中,導電圖案122、閘極121及掃描線SL可形成於同一第一導電層。也就是說,導電圖案122的材質、閘極
121的材質及掃描線SL的材質可相同。另外,在本實施例中,源極161、汲極162和資料線DL可形成於同一第二導電層。也就是說,源極161的材質、汲極162的材質及資料線DL的材質可相同。基於導電性的考量,所述第一導電層及所述第二導電層一般是金屬。然而,本發明不限於此,根據其他實施例,所述第一導電層及所述第二導電層也可以使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的堆疊層。
In this embodiment, the
在本實施例中,畫素電極130例如是透明導電層,其包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、其它合適的氧化物、或者是上述至少二者之堆疊層,但本發明不以此為限。
In this embodiment, the
在本實施例中,畫素PX還包括共用電極180,設置於閘絕緣層140上。具體而言,在本實施例中,畫素陣列基板100還包括設置於源極161、汲極162和部分之閘絕緣層140上的介電層170,而共用電極180可設置於介電層170上。
In this embodiment, the pixel PX further includes a
在本實施例中,共用電極180具有多個狹縫180a,共用電極180的狹縫180a與畫素電極130重疊。畫素陣列基板100、對向基板(未繪示)及設置於畫素陣列基板100與對向基板之間的顯示介質(例如:液晶;未繪示)可組成顯示面板,而共用電極180與畫素電極130之間的電位差係用以驅動顯示介質,以使顯示面板能顯示畫面。
In this embodiment, the
在本實施例中,共用電極180除了用以顯示外,相鄰的多個畫素PX的多個共用電極180還可彼此電性連接,以形成一觸控感測墊SP(標示於圖1)。觸控感測墊SP可透過觸控走線163電性連接至一驅動晶片190。也就是說,本實施例的畫素陣列基板100除了可用以形成顯示面板外,畫素陣列基板100本身還內建有觸控功能。
In this embodiment, in addition to the
以下具體說明本實施例之多個畫素PX的多個共用電極180如何彼此電性連接以形成觸控感測墊SP,而做為觸控感測墊SP的多個共用電極180又如何與觸控走線163電性連接。
The following specifically describes how the plurality of
請參照圖2及圖3,畫素陣列基板100還包括共用線123。閘絕緣層140設置於共用線123上。在本實施例中,共用線123大致上可與掃描線SL平行,共用線123與掃描線SL可皆形成於前述的第一導電層,但本發明不以此為限。
2 and 3, the
在本實施例中,共用電極180包括主要部181及延伸部182。主要部181重疊於畫素電極130。延伸部182沿第一方向d1延伸至畫素電極130的面積外。共用線123沿第二方向d2延伸。第一方向d1與第二方向d2交錯。畫素陣列基板100的多個畫素PX包括相鄰的第一畫素PX1及第二畫素PX2。閘絕緣層140設置於共用線123上且具有分別重疊於共用線123之不同兩處的第一接觸窗140b及第三接觸窗140d。第一畫素PX1之共用電極180的延伸部182透過閘絕緣層140的第一接觸窗140b及介電層170的接觸窗170b電性連接至共用線123。第二畫素PX2之共用電極
180的延伸部182透過閘絕緣層140的第三接觸窗140d及介電層170的接觸窗170d電性連接至共用線123。也就是說,相鄰之多個畫素PX的多個共用電極180是利用設置在主動區(active area)的部分共用線123彼此電性連接,以形成一觸控感測墊SP(標示於圖1)。
In this embodiment, the
畫素陣列基板100更包括觸控走線163,電性連接至觸控感測墊SP。具體而言,在本實施例中,觸控走線163設置於閘絕緣層140上且透過閘絕緣層140的第二接觸窗140c電性連接至共用線123,觸控走線163透過部分的共用線123連接至由多個共用電極180所組成的觸控感測墊SP。
The
特別是,在本實施例中,觸控走線163直接設置於閘絕緣層140上,而與閘絕緣層140接觸。設置於閘絕緣層140上的觸控走線163可跨越設置於閘絕緣層140下之畫素PX的導電圖案122上。在本實施例中,觸控走線163的材質與資料線DL的材質可相同;也就是說,觸控走線163與資料線DL可形成於同一膜層,但本發明不以此為限。
In particular, in this embodiment, the
在本實施例中,第一接觸窗140b於基底110上的垂直投影位於第一畫素PX1的資料線DL於基底110上的垂直投影和第二接觸窗140c於基底110上的垂直投影之間。第二接觸窗140c於基底110上的垂直投影位於第一接觸窗140b於基底110上的垂直投影和第三接觸窗140d於基底110上的垂直投影之間。
In this embodiment, the vertical projection of the
在本實施例中,第一畫素PX1之主動元件T的源極161
和第二畫素PX2之主動元件T的源極161係電性連接至同一條資料線DL,而第一畫素PX1之主動元件T的閘極121和第二畫素PX2之主動元件T的閘極121係電性連接至不同的兩條掃描線SL。也就是說,本實施例的畫素陣列基板100是半源極驅動(half source driving;HSD)架構。
In this embodiment, the
在本實施例中,第一畫素PX1的共用電極180的延伸部182跨越第二畫素PX2的導電圖案122。此外,觸控走線163於基底110上的垂直投影可位於第一畫素PX1之畫素電極130及第二畫素PX2之畫素電極130於基底110上的兩垂直投影之間。
In this embodiment, the
在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。 It must be noted here that the following embodiments follow the element numbers and partial contents of the foregoing embodiments, wherein the same reference numbers are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
圖4為本發明第二實施例之畫素陣列基板100A之局部R的放大示意圖。圖4對應圖1之畫素陣列基板100A的局部R。
FIG. 4 is an enlarged schematic view of a part R of the
圖5為本發明第二實施例之畫素陣列基板100A之剖面示意圖。圖5對應圖4的剖線I-I’及剖線Π-Π’。
5 is a schematic cross-sectional view of a
圖1繪示畫素陣列基板100A的基底110、觸控感測墊SP、觸控走線163及驅動晶片190,而省略畫素陣列基板100A的其它構件;被圖1省略之畫素陣列基板100A的其它構件繪於圖4及圖5。此外,圖4省略圖5之多個接觸窗140a、140b、170b、140c、140d、170d。
FIG. 1 shows the
第二實施例的畫素陣列基板100A與第一實施例的畫素陣列基板100類似,兩者的差異如下述。請參照圖4及圖5,在本實施例中,係依序形成畫素電極130、導電圖案122及閘絕緣層140,而部分的導電圖案122設置於閘絕緣層140與畫素電極130之間。
The
綜上所述,本發明一實施例的畫素陣列基板包括基底、至少一畫素及觸控走線。每一畫素的每一者包括薄膜電晶體、資料線、掃描線、導電圖案、畫素電極及共用電極。薄膜電晶體具有閘極、半導體圖案、設置於閘極與半導體圖案之間的閘絕緣層、源極及汲極。導電圖案電性連接至薄膜電晶體的汲極,其中閘絕緣層設置於導電圖案上。畫素電極電性連接至導電圖案,且設置於閘絕緣層與基底之間。共用電極設置於閘絕緣層上。觸控走線電性連接至共用電極。特別是,觸控走線跨越畫素的導電圖案。藉此,觸控走線不須與資料線重疊,觸控走線與資料線之間的耦合電容小,且觸控走線的設置不會過度影響畫素陣列基板的開口率,而能實現觸控功能及開口率俱佳的畫素陣列基板。 In summary, the pixel array substrate of an embodiment of the present invention includes a substrate, at least one pixel, and touch traces. Each of each pixel includes a thin film transistor, a data line, a scanning line, a conductive pattern, a pixel electrode, and a common electrode. The thin film transistor has a gate electrode, a semiconductor pattern, a gate insulating layer provided between the gate electrode and the semiconductor pattern, a source electrode, and a drain electrode. The conductive pattern is electrically connected to the drain electrode of the thin film transistor, and the gate insulating layer is disposed on the conductive pattern. The pixel electrode is electrically connected to the conductive pattern, and is disposed between the gate insulating layer and the substrate. The common electrode is arranged on the gate insulating layer. The touch trace is electrically connected to the common electrode. In particular, the touch trace crosses the pixel's conductive pattern. In this way, the touch trace does not need to overlap with the data line, the coupling capacitance between the touch trace and the data line is small, and the setting of the touch trace does not excessively affect the aperture ratio of the pixel array substrate, and can be achieved Pixel array substrate with excellent touch function and aperture ratio.
此外,在一實施例中,畫素電極設置於閘絕緣層與基底之間,畫素電極透過設置於閘絕緣層下的導電圖案與薄膜電晶體的汲極電性連接,觸控走線設置於閘絕緣層上,且觸控走線與資料線可形成於同一膜層。因此,畫素陣列基板的製造工序少。 In addition, in one embodiment, the pixel electrode is disposed between the gate insulating layer and the substrate, the pixel electrode is electrically connected to the drain of the thin film transistor through the conductive pattern disposed under the gate insulating layer, and the touch trace is provided On the gate insulating layer, the touch trace and the data line can be formed on the same film layer. Therefore, the manufacturing process of the pixel array substrate is small.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的 精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field of the art will not deviate from the present invention. Within the spirit and scope, some changes and modifications can be made, so the scope of protection of the present invention shall be subject to the scope defined in the appended patent application.
100:畫素陣列基板 100: pixel array substrate
121:閘極 121: Gate
122:導電圖案 122: conductive pattern
123:共用線 123: shared line
130:畫素電極 130: pixel electrode
150:半導體圖案 150: semiconductor pattern
161:源極 161: Source
162:汲極 162: Jiji
163:觸控走線 163: Touch trace
180:共用電極 180: common electrode
180a:狹縫 180a: slit
181:主要部 181: Main Department
182:延伸部 182: Extension
d1、d2:方向 d1, d2: direction
DL:資料線 DL: data cable
PX、PX1、PX2:畫素 PX, PX1, PX2: pixels
R:局部 R: local
SL:掃描線 SL: Scan line
T:薄膜電晶體 T: thin film transistor
I-I’、Π-Π’:剖線 I-I’, Π-Π’: section line
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