TWI690917B - Pixel array substrate - Google Patents

Pixel array substrate Download PDF

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TWI690917B
TWI690917B TW108108515A TW108108515A TWI690917B TW I690917 B TWI690917 B TW I690917B TW 108108515 A TW108108515 A TW 108108515A TW 108108515 A TW108108515 A TW 108108515A TW I690917 B TWI690917 B TW I690917B
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pixel
electrode
insulating layer
gate insulating
array substrate
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TW108108515A
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Chinese (zh)
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TW202034303A (en
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紀佑旻
蘇松宇
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友達光電股份有限公司
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Priority to TW108108515A priority Critical patent/TWI690917B/en
Priority to CN201910994975.3A priority patent/CN110764645B/en
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

Abstract

A pixel array substrate includes a substrate, a pixel and a touch trace. The pixel is disposed on the substrate. The pixel includes a thin film transistor, a data line, a scan line, a conductive pattern, a pixel electrode and a common electrode. The thin film transistor has a gate, a semiconductor pattern, a gate insulating layer disposed between the gate and the semiconductor pattern, a source and a drain. The data line is electrically connected to the source of the thin film transistor. The scan line is electrically connected to the gate of the thin film transistor. The conductive pattern is electrically connected to the drain of the thin film transistor. The gate insulating layer is disposed on the conductive pattern. The pixel electrode is electrically connected to the conductive pattern and disposed between the gate insulating layer and the substrate. The common electrode is disposed on the gate insulating layer. The touch trace is electrically connected to the common electrode and crosses the conductive pattern of the pixel.

Description

畫素陣列基板Pixel array substrate

本發明是有關於一種半導體基板,且特別是有關於一種畫素陣列基板。 The invention relates to a semiconductor substrate, and in particular to a pixel array substrate.

顯示器的應用日益廣泛,舉凡家用的視聽娛樂、公共場合的訊息顯示看板、電競用的顯示器及可攜式電子產品都可見其蹤跡。為了使用方便,顯示器多具有觸控功能。具有觸控及顯示功能的電子裝置稱為觸控顯示裝置。一般而言,觸控顯示裝置可分為外掛式(out cell)、晶胞上式(on cell)及內嵌式(In-cell)。內嵌式觸控顯示裝置具有易薄型化的優勢,因此,近幾年逐漸成為觸控顯示裝置的主流。 The application of the display is becoming more and more widespread, such as home audio-visual entertainment, public information display boards, e-sports displays and portable electronic products are all visible. For ease of use, the display has touch functions. Electronic devices with touch and display functions are called touch display devices. In general, touch display devices can be divided into out-cell (on cell), on-cell (on cell), and in-cell (In-cell). The in-cell touch display device has the advantage of being easy to be thin, and therefore, it has gradually become the mainstream of touch display devices in recent years.

內嵌式觸控顯示裝置包括具有畫素、資料線及掃描線的畫素陣列基板以及整合在畫素陣列基板中的觸控走線。為了將觸控走線整合在畫素陣列基板中的觸控走線,大多使用另一道工序製作觸控走線,造成畫素陣列基板的製程繁多。此外,觸控走線多設置於資料線上方,觸控走線與資料線之間的耦合電容大,影響觸控功能。 The in-cell touch display device includes a pixel array substrate with pixels, data lines and scan lines, and touch traces integrated in the pixel array substrate. In order to integrate the touch traces into the touch traces in the pixel array substrate, most of them use another process to make the touch traces, resulting in a variety of processes for the pixel array substrate. In addition, the touch traces are mostly arranged above the data lines, and the coupling capacitance between the touch traces and the data lines is large, which affects the touch function.

本發明提供一種畫素陣列基板,製造工序少且性能佳。 The present invention provides a pixel array substrate with few manufacturing processes and good performance.

本發明的畫素陣列基板,包括基底、至少一畫素以及觸控走線。至少一畫素設置於基底上。至少一畫素的每一者包括薄膜電晶體、資料線、掃描線、導電圖案、畫素電極及共用電極。薄膜電晶體具有閘極、半導體圖案、設置於閘極與半導體圖案之間的閘絕緣層、源極及汲極。資料線電性連接至薄膜電晶體的源極。掃描線電性連接至薄膜電晶體的閘極。導電圖案電性連接至薄膜電晶體的汲極,其中閘絕緣層設置於導電圖案上。畫素電極電性連接至導電圖案,且設置於閘絕緣層與基底之間。共用電極設置於閘絕緣層上。觸控走線電性連接至共用電極。特別是,觸控走線跨越畫素的導電圖案。 The pixel array substrate of the present invention includes a substrate, at least one pixel and touch traces. At least one pixel is disposed on the substrate. Each of the at least one pixel includes thin film transistors, data lines, scanning lines, conductive patterns, pixel electrodes, and common electrodes. The thin film transistor has a gate electrode, a semiconductor pattern, a gate insulating layer provided between the gate electrode and the semiconductor pattern, a source electrode, and a drain electrode. The data line is electrically connected to the source of the thin film transistor. The scanning line is electrically connected to the gate electrode of the thin film transistor. The conductive pattern is electrically connected to the drain electrode of the thin film transistor, and the gate insulating layer is disposed on the conductive pattern. The pixel electrode is electrically connected to the conductive pattern, and is disposed between the gate insulating layer and the substrate. The common electrode is arranged on the gate insulating layer. The touch trace is electrically connected to the common electrode. In particular, the touch trace crosses the pixel's conductive pattern.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

100、100A:畫素陣列基板 100, 100A: pixel array substrate

110:基底 110: base

121:閘極 121: Gate

122:導電圖案 122: conductive pattern

123:共用線 123: shared line

130:畫素電極 130: pixel electrode

140:閘絕緣層 140: gate insulation

140a、140b、140c、140d、170b、170d:接觸窗 140a, 140b, 140c, 140d, 170b, 170d: contact window

150:半導體圖案 150: semiconductor pattern

161:源極 161: Source

162:汲極 162: Jiji

163:觸控走線 163: Touch trace

170:介電層 170: dielectric layer

180:共用電極 180: common electrode

180a:狹縫 180a: slit

181:主要部 181: Main Department

182:延伸部 182: Extension

190:驅動晶片 190: driver chip

d1、d2:方向 d1, d2: direction

DL:資料線 DL: data cable

PX、PX1、PX2:畫素 PX, PX1, PX2: pixels

R:局部 R: local

SP:觸控感測墊 SP: Touch sensing pad

SL:掃描線 SL: Scan line

T:薄膜電晶體 T: thin film transistor

I-I’、Π-Π’:剖線 I-I’, Π-Π’: section line

圖1為本發明一實施例之畫素陣列基板的上視示意圖。 FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention.

圖2為本發明第一實施例之畫素陣列基板100之局部R的放大示意圖。 2 is an enlarged schematic view of a part R of the pixel array substrate 100 according to the first embodiment of the invention.

圖3為本發明第一實施例之畫素陣列基板100之剖面示意圖。 3 is a schematic cross-sectional view of the pixel array substrate 100 according to the first embodiment of the invention.

圖4為本發明第二實施例之畫素陣列基板100A之局部R的 放大示意圖。 4 is a partial R of the pixel array substrate 100A of the second embodiment of the invention Enlarge the schematic.

圖5為本發明第二實施例之畫素陣列基板100A之剖面示意圖。 5 is a schematic cross-sectional view of a pixel array substrate 100A according to a second embodiment of the invention.

應當理解,當諸如層、膜、區域或基板的元件被稱為在另一元件“上”或“連接到”另一元件時,其可以直接在另一元件上或與另一元件連接,或者中間元件可以也存在。相反,當元件被稱為“直接在另一元件上”或“直接連接到”另一元件時,不存在中間元件。如本文所使用的,“連接”可以指物理及/或電性連接。再者,“電性連接”或“耦合”係可為二元件間存在其它元件。 It should be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “connected to” another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Furthermore, the "electrically connected" or "coupled" system may be that there are other elements between the two elements.

本文使用的“約”、“近似”、或“實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,“約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、“近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。 As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable deviation range for a particular value determined by one of ordinary skill in the art, taking into account the measurements and A certain amount of measurement-related errors (ie, measurement system limitations). For example, "about" may mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, "about", "approximately", or "substantially" can be based on optical properties, etching properties, or other properties to select a more acceptable range of deviation or standard deviation, and not one standard deviation can be applied to all properties .

除非另有定義,本文使用的所有術語(包括技術和科學術語)具有與本發明所屬領域的普通技術人員通常理解的相同的含義。將進一步理解的是,諸如在通常使用的字典中定義的那些 術語應當被解釋為具有與它們在相關技術和本發明的上下文中的含義一致的含義,並且將不被解釋為理想化的或過度正式的意義,除非本文中明確地這樣定義。 Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this invention belongs. It will be further understood that such as those defined in commonly used dictionaries Terms should be interpreted as having a meaning consistent with their meaning in the context of the related art and the present invention, and will not be interpreted as an idealized or excessively formal meaning unless explicitly defined as such herein.

圖1為本發明一實施例之畫素陣列基板的上視示意圖。 FIG. 1 is a schematic top view of a pixel array substrate according to an embodiment of the invention.

圖2為本發明第一實施例之畫素陣列基板100之局部R的放大示意圖。圖2對應圖1之畫素陣列基板100的局部R。 2 is an enlarged schematic view of a part R of the pixel array substrate 100 according to the first embodiment of the invention. FIG. 2 corresponds to a part R of the pixel array substrate 100 of FIG. 1.

圖3為本發明第一實施例之畫素陣列基板100之剖面示意圖。圖3對應圖2的剖線I-I’及剖線Π-Π’。 3 is a schematic cross-sectional view of the pixel array substrate 100 according to the first embodiment of the invention. Fig. 3 corresponds to section line I-I' and section line Π-Π' of Fig. 2.

圖1繪示畫素陣列基板100的基底110、觸控感測墊SP、觸控走線163及驅動晶片190,而省略畫素陣列基板100的其它構件;被圖1省略之畫素陣列基板100的其它構件繪於圖2及圖3。此外,圖2省略圖3之多個接觸窗140a、140b、170b、140c、140d、170d。 1 shows the base 110 of the pixel array substrate 100, the touch sensing pad SP, the touch traces 163, and the driving chip 190, and omits other components of the pixel array substrate 100; the pixel array substrate omitted by FIG. 1 The other components of 100 are depicted in FIGS. 2 and 3. In addition, FIG. 2 omits the plurality of contact windows 140a, 140b, 170b, 140c, 140d, and 170d of FIG.

請參照圖1、圖2及圖3,畫素陣列基板100包括基底110及設置於基底110上的多個畫素PX。基底110主要是用來承載畫素陣列基板100的元件之用。舉例而言,在本實施例中,基底110的材質可以是玻璃、石英、有機聚合物、或是不透光/反射材料(例如:晶圓、陶瓷、或其它可適用的材料)、或是其它可適用的材料。 Referring to FIGS. 1, 2 and 3, the pixel array substrate 100 includes a base 110 and a plurality of pixels PX disposed on the base 110. The substrate 110 is mainly used to carry the elements of the pixel array substrate 100. For example, in this embodiment, the material of the substrate 110 may be glass, quartz, organic polymer, or opaque/reflective materials (eg, wafers, ceramics, or other applicable materials), or Other applicable materials.

每一畫素PX包括薄膜電晶體T、資料線DL及掃描線SL。薄膜電晶體T具有閘極121、半導體圖案150、設置於閘極121與半導體圖案150之間的閘絕緣層140、源極161與汲極162。掃描線SL電性連接至薄膜電晶體T的閘極121。資料線DL電性 連接至薄膜電晶體T的源極161。源極161和汲極162分別電性連接至半導體圖案150的不同兩區。 Each pixel PX includes a thin film transistor T, a data line DL, and a scan line SL. The thin film transistor T has a gate 121, a semiconductor pattern 150, a gate insulating layer 140 disposed between the gate 121 and the semiconductor pattern 150, a source 161, and a drain 162. The scan line SL is electrically connected to the gate 121 of the thin film transistor T. Data line DL electrical Connected to the source electrode 161 of the thin film transistor T. The source electrode 161 and the drain electrode 162 are respectively electrically connected to two different regions of the semiconductor pattern 150.

在本實施例中,閘極121可位於半導體圖案150的下方,而薄膜電晶體T可為底部閘極型電晶體。然而,本發明不限於此,根據其它實施例,薄膜電晶體T也可以是其它型式的電晶體。舉例而言,在另一實施例中,閘極121也可位於半導體圖案150的上方,而薄膜電晶體T也可以是頂部閘極型電晶體。 In this embodiment, the gate electrode 121 may be located under the semiconductor pattern 150, and the thin film transistor T may be a bottom gate transistor. However, the present invention is not limited to this, and according to other embodiments, the thin film transistor T may also be other types of transistors. For example, in another embodiment, the gate 121 may also be located above the semiconductor pattern 150, and the thin film transistor T may also be a top gate transistor.

畫素PX還包括導電圖案122。閘絕緣層140設置於導電圖案122上。導電圖案122設置於閘絕緣層140與基底110之間。薄膜電晶體T的汲極162電性連接至導電圖案122。具體而言,在本實施例中,閘絕緣層140具有接觸窗140a,而薄膜電晶體T的汲極162透過接觸窗140a電性連接至導電圖案122。 The pixel PX further includes a conductive pattern 122. The gate insulating layer 140 is disposed on the conductive pattern 122. The conductive pattern 122 is disposed between the gate insulating layer 140 and the substrate 110. The drain electrode 162 of the thin film transistor T is electrically connected to the conductive pattern 122. Specifically, in this embodiment, the gate insulating layer 140 has a contact window 140a, and the drain electrode 162 of the thin film transistor T is electrically connected to the conductive pattern 122 through the contact window 140a.

畫素PX還包括畫素電極130,電性連接至導電圖案122。畫素電極130透過導電圖案122電性連接至薄膜電晶體T的汲極162。特別是,畫素電極130設置於閘絕緣層140與基底110之間。 The pixel PX further includes a pixel electrode 130 electrically connected to the conductive pattern 122. The pixel electrode 130 is electrically connected to the drain electrode 162 of the thin film transistor T through the conductive pattern 122. In particular, the pixel electrode 130 is disposed between the gate insulating layer 140 and the substrate 110.

舉例而言,在本實施例中,可選擇性地依序形成導電圖案122、畫素電極130及閘絕緣層140。部分的畫素電極130可直接設置於導電圖案122上,以使畫素電極130與導電圖案122電性連接。在本實施例中,部分的畫素電極130可選擇性地設置於閘絕緣層140與導電圖案122之間,但本發明不以此為限。 For example, in this embodiment, the conductive pattern 122, the pixel electrode 130, and the gate insulating layer 140 can be selectively formed in sequence. Part of the pixel electrode 130 may be directly disposed on the conductive pattern 122, so that the pixel electrode 130 and the conductive pattern 122 are electrically connected. In this embodiment, part of the pixel electrodes 130 can be selectively disposed between the gate insulating layer 140 and the conductive pattern 122, but the invention is not limited thereto.

在本實施例中,導電圖案122、閘極121及掃描線SL可形成於同一第一導電層。也就是說,導電圖案122的材質、閘極 121的材質及掃描線SL的材質可相同。另外,在本實施例中,源極161、汲極162和資料線DL可形成於同一第二導電層。也就是說,源極161的材質、汲極162的材質及資料線DL的材質可相同。基於導電性的考量,所述第一導電層及所述第二導電層一般是金屬。然而,本發明不限於此,根據其他實施例,所述第一導電層及所述第二導電層也可以使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的堆疊層。 In this embodiment, the conductive pattern 122, the gate 121, and the scan line SL may be formed on the same first conductive layer. In other words, the material and gate of the conductive pattern 122 The material of 121 and the material of the scanning line SL may be the same. In addition, in this embodiment, the source electrode 161, the drain electrode 162 and the data line DL may be formed on the same second conductive layer. In other words, the material of the source electrode 161, the material of the drain electrode 162, and the material of the data line DL may be the same. Based on conductivity considerations, the first conductive layer and the second conductive layer are generally metals. However, the present invention is not limited to this. According to other embodiments, the first conductive layer and the second conductive layer may also use other conductive materials, such as: alloy, nitride of metal material, oxide of metal material, metal Nitrogen oxide of the material, or a stack of metal materials and other conductive materials.

在本實施例中,畫素電極130例如是透明導電層,其包括金屬氧化物,例如:銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、其它合適的氧化物、或者是上述至少二者之堆疊層,但本發明不以此為限。 In this embodiment, the pixel electrode 130 is, for example, a transparent conductive layer, which includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, Other suitable oxides, or stacked layers of at least two of the above, but the invention is not limited thereto.

在本實施例中,畫素PX還包括共用電極180,設置於閘絕緣層140上。具體而言,在本實施例中,畫素陣列基板100還包括設置於源極161、汲極162和部分之閘絕緣層140上的介電層170,而共用電極180可設置於介電層170上。 In this embodiment, the pixel PX further includes a common electrode 180, which is disposed on the gate insulating layer 140. Specifically, in this embodiment, the pixel array substrate 100 further includes a dielectric layer 170 disposed on the source electrode 161, the drain electrode 162, and part of the gate insulating layer 140, and the common electrode 180 may be disposed on the dielectric layer 170 on.

在本實施例中,共用電極180具有多個狹縫180a,共用電極180的狹縫180a與畫素電極130重疊。畫素陣列基板100、對向基板(未繪示)及設置於畫素陣列基板100與對向基板之間的顯示介質(例如:液晶;未繪示)可組成顯示面板,而共用電極180與畫素電極130之間的電位差係用以驅動顯示介質,以使顯示面板能顯示畫面。 In this embodiment, the common electrode 180 has a plurality of slits 180a, and the slit 180a of the common electrode 180 overlaps the pixel electrode 130. The pixel array substrate 100, a counter substrate (not shown), and a display medium (eg, liquid crystal; not shown) disposed between the pixel array substrate 100 and the counter substrate can constitute a display panel, and the common electrode 180 and The potential difference between the pixel electrodes 130 is used to drive the display medium, so that the display panel can display images.

在本實施例中,共用電極180除了用以顯示外,相鄰的多個畫素PX的多個共用電極180還可彼此電性連接,以形成一觸控感測墊SP(標示於圖1)。觸控感測墊SP可透過觸控走線163電性連接至一驅動晶片190。也就是說,本實施例的畫素陣列基板100除了可用以形成顯示面板外,畫素陣列基板100本身還內建有觸控功能。 In this embodiment, in addition to the common electrode 180 for display, the multiple common electrodes 180 of adjacent pixels PX can also be electrically connected to each other to form a touch sensing pad SP (labeled in FIG. 1 ). The touch sensing pad SP can be electrically connected to a driving chip 190 through the touch trace 163. In other words, in addition to being used to form a display panel, the pixel array substrate 100 of the present embodiment also has a built-in touch function.

以下具體說明本實施例之多個畫素PX的多個共用電極180如何彼此電性連接以形成觸控感測墊SP,而做為觸控感測墊SP的多個共用電極180又如何與觸控走線163電性連接。 The following specifically describes how the plurality of common electrodes 180 of the plurality of pixels PX in this embodiment are electrically connected to each other to form the touch sensing pad SP, and how the plurality of common electrodes 180 as the touch sensing pad SP are The touch trace 163 is electrically connected.

請參照圖2及圖3,畫素陣列基板100還包括共用線123。閘絕緣層140設置於共用線123上。在本實施例中,共用線123大致上可與掃描線SL平行,共用線123與掃描線SL可皆形成於前述的第一導電層,但本發明不以此為限。 2 and 3, the pixel array substrate 100 further includes a common line 123. The gate insulating layer 140 is provided on the common line 123. In this embodiment, the common line 123 may be substantially parallel to the scan line SL. Both the common line 123 and the scan line SL may be formed on the aforementioned first conductive layer, but the invention is not limited thereto.

在本實施例中,共用電極180包括主要部181及延伸部182。主要部181重疊於畫素電極130。延伸部182沿第一方向d1延伸至畫素電極130的面積外。共用線123沿第二方向d2延伸。第一方向d1與第二方向d2交錯。畫素陣列基板100的多個畫素PX包括相鄰的第一畫素PX1及第二畫素PX2。閘絕緣層140設置於共用線123上且具有分別重疊於共用線123之不同兩處的第一接觸窗140b及第三接觸窗140d。第一畫素PX1之共用電極180的延伸部182透過閘絕緣層140的第一接觸窗140b及介電層170的接觸窗170b電性連接至共用線123。第二畫素PX2之共用電極 180的延伸部182透過閘絕緣層140的第三接觸窗140d及介電層170的接觸窗170d電性連接至共用線123。也就是說,相鄰之多個畫素PX的多個共用電極180是利用設置在主動區(active area)的部分共用線123彼此電性連接,以形成一觸控感測墊SP(標示於圖1)。 In this embodiment, the common electrode 180 includes a main portion 181 and an extension portion 182. The main portion 181 overlaps the pixel electrode 130. The extending portion 182 extends beyond the area of the pixel electrode 130 along the first direction d1. The common line 123 extends along the second direction d2. The first direction d1 intersects the second direction d2. The plurality of pixels PX of the pixel array substrate 100 include adjacent first pixels PX1 and second pixels PX2. The gate insulating layer 140 is disposed on the common line 123 and has a first contact window 140b and a third contact window 140d that respectively overlap two different places of the common line 123. The extension portion 182 of the common electrode 180 of the first pixel PX1 is electrically connected to the common line 123 through the first contact window 140b of the gate insulating layer 140 and the contact window 170b of the dielectric layer 170. Common electrode of the second pixel PX2 The extension portion 182 of 180 is electrically connected to the common line 123 through the third contact window 140d of the gate insulating layer 140 and the contact window 170d of the dielectric layer 170. That is to say, the plurality of common electrodes 180 of the adjacent plurality of pixels PX are electrically connected to each other by using part of the common line 123 disposed in the active area to form a touch sensing pad SP (marked at figure 1).

畫素陣列基板100更包括觸控走線163,電性連接至觸控感測墊SP。具體而言,在本實施例中,觸控走線163設置於閘絕緣層140上且透過閘絕緣層140的第二接觸窗140c電性連接至共用線123,觸控走線163透過部分的共用線123連接至由多個共用電極180所組成的觸控感測墊SP。 The pixel array substrate 100 further includes touch traces 163 electrically connected to the touch sensing pad SP. Specifically, in this embodiment, the touch traces 163 are disposed on the gate insulating layer 140 and electrically connected to the common line 123 through the second contact window 140c of the gate insulating layer 140, and the touch traces 163 pass through part of The common line 123 is connected to the touch sensing pad SP composed of a plurality of common electrodes 180.

特別是,在本實施例中,觸控走線163直接設置於閘絕緣層140上,而與閘絕緣層140接觸。設置於閘絕緣層140上的觸控走線163可跨越設置於閘絕緣層140下之畫素PX的導電圖案122上。在本實施例中,觸控走線163的材質與資料線DL的材質可相同;也就是說,觸控走線163與資料線DL可形成於同一膜層,但本發明不以此為限。 In particular, in this embodiment, the touch trace 163 is directly disposed on the gate insulating layer 140 and is in contact with the gate insulating layer 140. The touch traces 163 disposed on the gate insulating layer 140 can cross the conductive patterns 122 of the pixels PX disposed under the gate insulating layer 140. In this embodiment, the material of the touch trace 163 and the data line DL can be the same; that is, the touch trace 163 and the data line DL can be formed in the same film layer, but the invention is not limited to this .

在本實施例中,第一接觸窗140b於基底110上的垂直投影位於第一畫素PX1的資料線DL於基底110上的垂直投影和第二接觸窗140c於基底110上的垂直投影之間。第二接觸窗140c於基底110上的垂直投影位於第一接觸窗140b於基底110上的垂直投影和第三接觸窗140d於基底110上的垂直投影之間。 In this embodiment, the vertical projection of the first contact window 140b on the substrate 110 is between the vertical projection of the data line DL of the first pixel PX1 on the substrate 110 and the vertical projection of the second contact window 140c on the substrate 110 . The vertical projection of the second contact window 140c on the substrate 110 is between the vertical projection of the first contact window 140b on the substrate 110 and the vertical projection of the third contact window 140d on the substrate 110.

在本實施例中,第一畫素PX1之主動元件T的源極161 和第二畫素PX2之主動元件T的源極161係電性連接至同一條資料線DL,而第一畫素PX1之主動元件T的閘極121和第二畫素PX2之主動元件T的閘極121係電性連接至不同的兩條掃描線SL。也就是說,本實施例的畫素陣列基板100是半源極驅動(half source driving;HSD)架構。 In this embodiment, the source 161 of the active element T of the first pixel PX1 The source 161 of the active element T of the second pixel PX2 is electrically connected to the same data line DL, and the gate 121 of the active element T of the first pixel PX1 and the active element T of the second pixel PX2 The gate 121 is electrically connected to two different scanning lines SL. That is to say, the pixel array substrate 100 of this embodiment has a half source driving (HSD) architecture.

在本實施例中,第一畫素PX1的共用電極180的延伸部182跨越第二畫素PX2的導電圖案122。此外,觸控走線163於基底110上的垂直投影可位於第一畫素PX1之畫素電極130及第二畫素PX2之畫素電極130於基底110上的兩垂直投影之間。 In this embodiment, the extension 182 of the common electrode 180 of the first pixel PX1 spans the conductive pattern 122 of the second pixel PX2. In addition, the vertical projection of the touch trace 163 on the substrate 110 may be located between two vertical projections of the pixel electrode 130 of the first pixel PX1 and the pixel electrode 130 of the second pixel PX2 on the substrate 110.

在此必須說明的是,下述實施例沿用前述實施例的元件標號與部分內容,其中採用相同的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,下述實施例不再重複贅述。 It must be noted here that the following embodiments follow the element numbers and partial contents of the foregoing embodiments, wherein the same reference numbers are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.

圖4為本發明第二實施例之畫素陣列基板100A之局部R的放大示意圖。圖4對應圖1之畫素陣列基板100A的局部R。 FIG. 4 is an enlarged schematic view of a part R of the pixel array substrate 100A according to the second embodiment of the invention. FIG. 4 corresponds to a part R of the pixel array substrate 100A of FIG. 1.

圖5為本發明第二實施例之畫素陣列基板100A之剖面示意圖。圖5對應圖4的剖線I-I’及剖線Π-Π’。 5 is a schematic cross-sectional view of a pixel array substrate 100A according to a second embodiment of the invention. Fig. 5 corresponds to section line I-I' and section line Π-Π' of Fig. 4.

圖1繪示畫素陣列基板100A的基底110、觸控感測墊SP、觸控走線163及驅動晶片190,而省略畫素陣列基板100A的其它構件;被圖1省略之畫素陣列基板100A的其它構件繪於圖4及圖5。此外,圖4省略圖5之多個接觸窗140a、140b、170b、140c、140d、170d。 FIG. 1 shows the base 110 of the pixel array substrate 100A, the touch sensing pad SP, the touch traces 163, and the driving chip 190, while omitting other components of the pixel array substrate 100A; the pixel array substrate omitted by FIG. 1 Other components of 100A are depicted in FIGS. 4 and 5. In addition, FIG. 4 omits the plurality of contact windows 140a, 140b, 170b, 140c, 140d, and 170d of FIG.

第二實施例的畫素陣列基板100A與第一實施例的畫素陣列基板100類似,兩者的差異如下述。請參照圖4及圖5,在本實施例中,係依序形成畫素電極130、導電圖案122及閘絕緣層140,而部分的導電圖案122設置於閘絕緣層140與畫素電極130之間。 The pixel array substrate 100A of the second embodiment is similar to the pixel array substrate 100 of the first embodiment, and the differences between the two are as follows. Referring to FIGS. 4 and 5, in this embodiment, the pixel electrode 130, the conductive pattern 122 and the gate insulating layer 140 are formed in sequence, and part of the conductive pattern 122 is disposed between the gate insulating layer 140 and the pixel electrode 130 between.

綜上所述,本發明一實施例的畫素陣列基板包括基底、至少一畫素及觸控走線。每一畫素的每一者包括薄膜電晶體、資料線、掃描線、導電圖案、畫素電極及共用電極。薄膜電晶體具有閘極、半導體圖案、設置於閘極與半導體圖案之間的閘絕緣層、源極及汲極。導電圖案電性連接至薄膜電晶體的汲極,其中閘絕緣層設置於導電圖案上。畫素電極電性連接至導電圖案,且設置於閘絕緣層與基底之間。共用電極設置於閘絕緣層上。觸控走線電性連接至共用電極。特別是,觸控走線跨越畫素的導電圖案。藉此,觸控走線不須與資料線重疊,觸控走線與資料線之間的耦合電容小,且觸控走線的設置不會過度影響畫素陣列基板的開口率,而能實現觸控功能及開口率俱佳的畫素陣列基板。 In summary, the pixel array substrate of an embodiment of the present invention includes a substrate, at least one pixel, and touch traces. Each of each pixel includes a thin film transistor, a data line, a scanning line, a conductive pattern, a pixel electrode, and a common electrode. The thin film transistor has a gate electrode, a semiconductor pattern, a gate insulating layer provided between the gate electrode and the semiconductor pattern, a source electrode, and a drain electrode. The conductive pattern is electrically connected to the drain electrode of the thin film transistor, and the gate insulating layer is disposed on the conductive pattern. The pixel electrode is electrically connected to the conductive pattern, and is disposed between the gate insulating layer and the substrate. The common electrode is arranged on the gate insulating layer. The touch trace is electrically connected to the common electrode. In particular, the touch trace crosses the pixel's conductive pattern. In this way, the touch trace does not need to overlap with the data line, the coupling capacitance between the touch trace and the data line is small, and the setting of the touch trace does not excessively affect the aperture ratio of the pixel array substrate, and can be achieved Pixel array substrate with excellent touch function and aperture ratio.

此外,在一實施例中,畫素電極設置於閘絕緣層與基底之間,畫素電極透過設置於閘絕緣層下的導電圖案與薄膜電晶體的汲極電性連接,觸控走線設置於閘絕緣層上,且觸控走線與資料線可形成於同一膜層。因此,畫素陣列基板的製造工序少。 In addition, in one embodiment, the pixel electrode is disposed between the gate insulating layer and the substrate, the pixel electrode is electrically connected to the drain of the thin film transistor through the conductive pattern disposed under the gate insulating layer, and the touch trace is provided On the gate insulating layer, the touch trace and the data line can be formed on the same film layer. Therefore, the manufacturing process of the pixel array substrate is small.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的 精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field of the art will not deviate from the present invention. Within the spirit and scope, some changes and modifications can be made, so the scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

100:畫素陣列基板 100: pixel array substrate

121:閘極 121: Gate

122:導電圖案 122: conductive pattern

123:共用線 123: shared line

130:畫素電極 130: pixel electrode

150:半導體圖案 150: semiconductor pattern

161:源極 161: Source

162:汲極 162: Jiji

163:觸控走線 163: Touch trace

180:共用電極 180: common electrode

180a:狹縫 180a: slit

181:主要部 181: Main Department

182:延伸部 182: Extension

d1、d2:方向 d1, d2: direction

DL:資料線 DL: data cable

PX、PX1、PX2:畫素 PX, PX1, PX2: pixels

R:局部 R: local

SL:掃描線 SL: Scan line

T:薄膜電晶體 T: thin film transistor

I-I’、Π-Π’:剖線 I-I’, Π-Π’: section line

Claims (8)

一種畫素陣列基板,包括:一基底;至少一畫素,設置於該基底上,其中該至少一畫素的每一者包括:一薄膜電晶體,具有一閘極、一半導體圖案、設置於該閘極與該半導體圖案之間的一閘絕緣層、一源極及一汲極;一資料線,電性連接至該薄膜電晶體的該源極;一掃描線,電性連接至該薄膜電晶體的該閘極;一導電圖案,電性連接至該薄膜電晶體的該汲極,其中該閘絕緣層設置於該導電圖案上;一畫素電極,電性連接至該導電圖案,且設置於該閘絕緣層與該基底之間;以及一共用電極,設置於該閘絕緣層上;以及一觸控走線,電性連接至該共用電極,其中該觸控走線跨越該導電圖案。 A pixel array substrate, including: a substrate; at least one pixel, disposed on the substrate, wherein each of the at least one pixel includes: a thin film transistor, having a gate, a semiconductor pattern, disposed on A gate insulating layer, a source electrode and a drain electrode between the gate electrode and the semiconductor pattern; a data line electrically connected to the source electrode of the thin film transistor; a scan line electrically connected to the thin film The gate electrode of the transistor; a conductive pattern electrically connected to the drain electrode of the thin film transistor, wherein the gate insulating layer is disposed on the conductive pattern; a pixel electrode is electrically connected to the conductive pattern, and Disposed between the gate insulating layer and the substrate; and a common electrode disposed on the gate insulating layer; and a touch trace electrically connected to the common electrode, wherein the touch trace crosses the conductive pattern . 如申請專利範圍第1項所述的畫素陣列基板,其中該導電圖案的材質與該閘極的材質相同。 The pixel array substrate as described in item 1 of the patent scope, wherein the material of the conductive pattern is the same as the material of the gate electrode. 如申請專利範圍第1項所述的畫素陣列基板,其中該觸控走線的材質與該資料線的材質相同。 The pixel array substrate as described in item 1 of the patent application range, wherein the material of the touch trace is the same as the material of the data line. 如申請專利範圍第1項所述的畫素陣列基板,其中該觸控走線接觸於該閘絕緣層。 The pixel array substrate as described in item 1 of the patent application range, wherein the touch trace is in contact with the gate insulating layer. 如申請專利範圍第1項所述的畫素陣列基板,其中部分的該畫素電極設置於該閘絕緣層與該導電圖案之間。 The pixel array substrate as described in item 1 of the patent application scope, wherein part of the pixel electrode is disposed between the gate insulating layer and the conductive pattern. 如申請專利範圍第1項所述的畫素陣列基板,其中部分的該導電圖案設置於該閘絕緣層與該畫素電極之間。 The pixel array substrate according to item 1 of the patent application scope, wherein part of the conductive pattern is disposed between the gate insulating layer and the pixel electrode. 如申請專利範圍第1項所述的畫素陣列基板,其中該至少一畫素的該每一者的該共用電極包括:一主要部,重疊於該畫素電極;以及一延伸部,沿一第一方向延伸至該畫素電極的面積外;該畫素陣列基板更包括:一共用線,沿一第二方向延伸,其中該閘絕緣層設置於該共用線上且具有分別重疊於該共用線之不同兩處的一第一接觸窗及一第二接觸窗,該至少一畫素包括一第一畫素,該第一畫素之該共用電極的該延伸部透過該第一接觸窗電性連接至該共用線,該觸控走線設置於該閘絕緣層上且透過該閘絕緣層的該第二接觸窗電性連接至該共用線。 The pixel array substrate of claim 1, wherein the common electrode of each of the at least one pixel includes: a main portion overlapping the pixel electrode; and an extension portion along a The first direction extends beyond the area of the pixel electrode; the pixel array substrate further includes: a common line extending along a second direction, wherein the gate insulating layer is disposed on the common line and has overlaps with the common line, respectively A first contact window and a second contact window at two different locations, the at least one pixel includes a first pixel, and the extension of the common electrode of the first pixel is electrically through the first contact window Connected to the common line, the touch trace is disposed on the gate insulating layer and is electrically connected to the common line through the second contact window of the gate insulating layer. 如申請專利範圍第7項所述的畫素陣列基板,其中該至少一畫素更包括一第二畫素,該閘絕緣層更具有重疊於該共用線之另一處的一第三接觸窗,該第二畫素之該共用電極的該延伸部透過該第三接觸窗電性連接至該共用線,且該第二接觸窗於該基底上的垂直投影位於該第一接觸窗於該基底上的垂直投影與該第三接觸窗於該基底上的垂直投影之間。The pixel array substrate as described in item 7 of the patent application range, wherein the at least one pixel further includes a second pixel, and the gate insulating layer further has a third contact window overlapping another part of the common line , The extension of the common electrode of the second pixel is electrically connected to the common line through the third contact window, and the vertical projection of the second contact window on the substrate is located on the first contact window on the substrate Between the vertical projection on the top and the vertical projection of the third contact window on the substrate.
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