TWI689111B - Quantum dot film and its manufacturing method - Google Patents

Quantum dot film and its manufacturing method Download PDF

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TWI689111B
TWI689111B TW105129771A TW105129771A TWI689111B TW I689111 B TWI689111 B TW I689111B TW 105129771 A TW105129771 A TW 105129771A TW 105129771 A TW105129771 A TW 105129771A TW I689111 B TWI689111 B TW I689111B
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layer
water
quantum dot
blocking layer
water blocking
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TW105129771A
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TW201810724A (en
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唐世杰
呂英宗
吳憲宗
李宛珊
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迎輝科技股份有限公司
原像科技有限公司
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Priority to TW105129771A priority Critical patent/TWI689111B/en
Priority to CN201710123637.3A priority patent/CN107817539A/en
Priority to US16/332,322 priority patent/US20190221721A1/en
Priority to KR1020197010591A priority patent/KR20190055140A/en
Priority to PCT/IB2017/054934 priority patent/WO2018051199A1/en
Priority to DE112017004597.5T priority patent/DE112017004597B4/en
Priority to JP2019535994A priority patent/JP6817451B2/en
Publication of TW201810724A publication Critical patent/TW201810724A/en
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Publication of TWI689111B publication Critical patent/TWI689111B/en
Priority to US17/338,257 priority patent/US11898744B2/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/14—Protective coatings, e.g. hard coatings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light

Abstract

一種量子點薄膜及其製造方法，該量子點薄膜包含一個基材、一個阻水層，及一個作用層。該阻水層具有阻隔水氣的功能，該阻水層位於該基材上，並且由有機材料與無機材料混合形成。該作用層位於該阻水層上方，並包括一個主體，以及數個摻混於該主體中的量子點。藉由該阻水層同時包含有機材料與無機材料，其中無機材料具有良好的阻水氣效果，避免作用層受到水氣影響，有機材料具有較佳的可撓性，而且能提升該阻水層與該基材及該作用層間的結合穩固性。本發明能有效降低薄膜整體厚度，阻水氣效果佳。A quantum dot film and a manufacturing method thereof. The quantum dot film includes a substrate, a water blocking layer, and an action layer. The water blocking layer has a function of blocking water vapor, the water blocking layer is located on the base material, and is formed by mixing an organic material and an inorganic material. The active layer is located above the water blocking layer, and includes a main body, and several quantum dots blended in the main body. The water-blocking layer includes both organic materials and inorganic materials, wherein the inorganic material has a good water-barrier effect, to prevent the active layer from being affected by water vapor, the organic material has better flexibility, and can enhance the water-blocking layer Bonding stability with the substrate and the active layer. The invention can effectively reduce the overall thickness of the film and has a good water-blocking effect.

Description

量子點薄膜及其製造方法Quantum dot film and its manufacturing method

本發明是有關於一種量子點薄膜及其製造方法，特別是指一種能受到光激發而發光的量子點薄膜及其製造方法。The invention relates to a quantum dot thin film and a manufacturing method thereof, in particular to a quantum dot thin film capable of being excited by light to emit light and a manufacturing method thereof.

已知發光二極體(light emitting diode，LED)發光裝置產生白光的其中一種方式，是利用含有量子點(quantum dots)的薄膜作為發光二極體的發光層，藉由不同材料或粒徑的量子點受到激發光源照射，發出不同於激發光源之波長的二次光線後混光而得。舉例來說，可利用藍光LED作為激發光源，並激發不同粒徑的量子點材料以產生紅光及綠光，便可將紅光、綠光及藍光以混光的方式形成白光。One of the known methods of light emitting diode (LED) light-emitting devices to produce white light is to use a thin film containing quantum dots as the light-emitting layer of the light-emitting diode. The quantum dots are irradiated by the excitation light source and emit secondary light with a wavelength different from that of the excitation light source, and then mixed light. For example, a blue LED can be used as an excitation light source, and quantum dot materials of different particle sizes can be excited to generate red light and green light, and red light, green light, and blue light can be mixed to form white light.

而量子點光學薄膜包含一基板，以及一位於該基板上並具有數個量子點的作用層。該基板對於外界環境水氣的阻絕性，將會直接影響該作用層的壽命與品質穩定性，若基板阻水性不佳，會導致作用層容易裂化、壽命較短。因此目前主要是於該基板上設置阻水薄膜來幫助阻隔外界水氣，所述阻水薄膜在材料的選用上，包含無機材料與有機材料，其中無機材料較有機材料的阻水氣效果好，但當無機材料阻水薄膜厚度過厚，內應力增加時將容易碎裂而降低阻水氣的效果，而有機材料雖然阻水氣效果稍差但可撓性佳，而且較易於與該基板結合，因此目前有一種設計，是於該基板上依序設置一層有機材料層、一層無機材料層與一層有機材料層等三層結構，藉由此三層結構的搭配形成阻水膜，一方面透過有機材料層來提升與基板間的結合力，另一方面透過該無機材料層來提升阻水氣效果。然而，由於上述阻水薄膜為三層層體的設計，過多的層體導致該量子點光學薄膜整體厚度較厚，不利於產品的薄型化設計。例如，當該量子點光學薄膜應用於顯示器的背光模組，將會使背光模組厚度較厚，無法滿足一般追求薄型顯示器的需求。The quantum dot optical film includes a substrate and an active layer on the substrate and having several quantum dots. The resistance of the substrate to moisture in the external environment will directly affect the life and quality stability of the active layer. If the substrate has poor water resistance, the active layer will easily crack and have a short life. Therefore, at present, a water-blocking film is mainly provided on the substrate to help block external moisture. The water-blocking film includes inorganic materials and organic materials in the selection of materials. Among them, inorganic materials have better water-barrier effects than organic materials. However, when the thickness of the water-blocking film of the inorganic material is too thick and the internal stress increases, it will be easily broken and reduce the effect of water-barrier gas, while the organic material has a weak water-barrier effect but good flexibility, and it is easier to combine with the substrate Therefore, there is currently a design in which a three-layer structure such as an organic material layer, an inorganic material layer and an organic material layer is sequentially arranged on the substrate. By combining the three-layer structure to form a water blocking film, on the one hand The organic material layer enhances the binding force with the substrate, and on the other hand, the inorganic material layer enhances the water vapor barrier effect. However, since the above water blocking film is a three-layer design, too many layers lead to a thicker overall thickness of the quantum dot optical film, which is not conducive to the thin design of the product. For example, when the quantum dot optical film is applied to a backlight module of a display, the thickness of the backlight module will be thicker, which cannot meet the general demand for a thin display.

因此，本發明之目的，即在提供一種厚度較薄、阻水氣效果佳的量子點薄膜及其製造方法。Therefore, the object of the present invention is to provide a quantum dot thin film with a thin thickness and good water vapor barrier effect and a manufacturing method thereof.

於是，本發明量子點薄膜，包含一個基材、一個阻水層，及一個作用層。該阻水層具有阻隔水氣的功能，該阻水層位於該基材上，並且由有機材料與無機材料混合形成。該作用層位於該阻水層上方，並包括一個主體，以及數個摻混於該主體中的量子點。Therefore, the quantum dot film of the present invention includes a substrate, a water blocking layer, and an active layer. The water blocking layer has a function of blocking water vapor, the water blocking layer is located on the base material, and is formed by mixing an organic material and an inorganic material. The active layer is located above the water blocking layer, and includes a main body, and several quantum dots blended in the main body.

本發明量子點薄膜的製造方法，包含：提供一個基材。將有機材料與無機材料混合在一起，並利用濺鍍方式披覆形成於該基材上，以在該基材上形成一個阻水層。形成一個具有數個量子點的作用層。The manufacturing method of the quantum dot film of the present invention includes: providing a substrate. The organic material and the inorganic material are mixed together and formed on the substrate by sputtering to form a water blocking layer on the substrate. Form an active layer with several quantum dots.

本發明之功效在於：藉由該阻水層同時包含有機材料與無機材料，其中無機材料具有良好的阻水氣效果，避免作用層受到水氣影響，有機材料具有較佳的可撓性，而且能提升該阻水層與該基材及該作用層間的結合穩固性。本發明以該阻水層就能達到良好阻水效能，能有效降低薄膜整體厚度。The effect of the present invention is that the water-blocking layer includes both organic materials and inorganic materials, wherein the inorganic material has a good water-barrier effect, prevents the active layer from being affected by water vapor, and the organic material has better flexibility, and It can improve the bonding stability between the water blocking layer, the base material and the active layer. In the present invention, the water blocking layer can achieve good water blocking performance, and can effectively reduce the overall thickness of the film.

參閱圖1，本發明量子點薄膜之一實施例，包含一個基材1、一個阻水層2、一個結合層3，以及一個作用層4。Referring to FIG. 1, an embodiment of the quantum dot film of the present invention includes a substrate 1, a water blocking layer 2, a bonding layer 3, and an active layer 4.

該基材1材料可以為聚對苯二甲酸乙二酯(polyethylene terephthalate，PET)、環狀烯烴共聚高分子(cyclo olefin (co)-polymers，COC)、聚亞醯胺(polyimide，PI)、聚醚碸樹脂(polyestersulfone，PES)、聚萘二甲酸乙二醇酯(polyethylene naphthalate，PEN)、聚碳酸酯(polycarbonate，PC)，或前述材料的任一組合。在本實施例中可以使用PET基材1，該基材1具有透光性與可撓性。The material of the substrate 1 may be polyethylene terephthalate (PET), cyclo olefin (co)-polymers (COC), polyimide (PI), Polyethersulfone (PES), polyethylene naphthalate (PEN), polycarbonate (PC), or any combination of the foregoing materials. In this embodiment, a PET substrate 1 can be used, which has transparency and flexibility.

該阻水層2位於該基材1上，並且由有機材料與無機材料混合形成。該有機材料為六甲基二矽氧烷（HMDSO），該無機材料為金屬氮化物、金屬氧化物或金屬氮氧化物。該阻水層2的厚度為5nm~200nm，使該阻水層2在適當厚度下，具有良好的阻隔水氣效果，可隔絕自該基材1穿透而來的水氣對該作用層4造成影響。The water blocking layer 2 is located on the substrate 1 and is formed by mixing organic materials and inorganic materials. The organic material is hexamethyldisilazane (HMDSO), and the inorganic material is metal nitride, metal oxide or metal oxynitride. The thickness of the water-blocking layer 2 is 5 nm to 200 nm, so that the water-blocking layer 2 has a good water vapor barrier effect under an appropriate thickness, and can block the water vapor penetrated from the substrate 1 from acting on the active layer 4 Cause an impact.

該結合層3位於該阻水層2上，其材料為有機材料，具體例為熱固型有機材料。例如甲基丙烯酸甲酯(methyl methacrylate)、環氧甲基丙烯酸酯(epoxy methacrylate)、環氧樹脂丙烯酸酯(epoxy acrylate)、雙酚A乙氧酸二丙烯酸(ethoxylated (2) bisphenol a dimethacrylate)、二醇二丙烯酸酯(hexanediol diacrylate)、雙酚A環氧丙烯酸酯(bisphenol a epoxy acrylate) 。該結合層3能用於提升該阻水層2與該作用層4間的附著力，同時也具有阻隔水氣效果，因此能與該阻水層2搭配而更加提升阻水性能。該結合層3的厚度薄，大約1微米(μm)。The bonding layer 3 is located on the water blocking layer 2 and its material is an organic material, and a specific example is a thermosetting organic material. For example, methyl methacrylate, epoxy methacrylate, epoxy acrylate, ethoxylated (2) bisphenol a dimethacrylate, Glycol diacrylate (hexanediol diacrylate), bisphenol a epoxy acrylate (bisphenol a epoxy acrylate). The bonding layer 3 can be used to improve the adhesion between the water blocking layer 2 and the active layer 4 and also has a water vapor blocking effect, so it can be matched with the water blocking layer 2 to further improve the water blocking performance. The thickness of the bonding layer 3 is thin, about 1 micrometer (μm).

該作用層4位於該結合層3上，並包括一個主體41，以及數個摻混於該主體41中的量子點42。該主體41材料為可透光的樹脂材料。所述量子點42材料為奈米晶體半導體材料，可以由II-VI或III-V族化合物或其他組合所合成之半導體量子點，例如ZnS、CdSe等材料，也可以使用CsPbX3 ，X為氯、溴、碘或上述的任一組合，或者也可以使用CH3 NH3 PbX3 ，X為氯、溴、碘或上述的任一組合。該等量子點42可於受到一激發光的照射後，發出不同於激發光的二次光線，且該等量子點42可藉由材料的選擇或粒徑大小的調整，改變受到激發光照射後的發光波長，從而發出與激發光不同顏色的色光。舉例來說，可以利用一藍光照射激發該等量子點42，使該等量子點42發出綠光、紅光。The active layer 4 is located on the bonding layer 3 and includes a body 41 and several quantum dots 42 blended in the body 41. The material of the main body 41 is a light-transmitting resin material. The quantum dot 42 material is a nanocrystalline semiconductor material, and can be a semiconductor quantum dot synthesized from II-VI or III-V group compounds or other combinations, such as ZnS, CdSe, etc. CsPbX 3 can also be used, where X is chlorine , Bromine, iodine, or any combination of the foregoing, or CH 3 NH 3 PbX 3 may also be used, where X is chlorine, bromine, iodine, or any combination of the foregoing. The quantum dots 42 can emit secondary light different from the excitation light after being irradiated with an excitation light, and the quantum dots 42 can be changed after being irradiated by the excitation light by the choice of materials or the adjustment of the particle size The emission wavelength of the light source is different from the excitation light. For example, the blue dots can be used to excite the quantum dots 42 so that the quantum dots 42 emit green light and red light.

參閱圖1、2，本發明量子點薄膜的製造方法的一實施例，包含以下步驟：Referring to FIGS. 1 and 2, an embodiment of the method for manufacturing a quantum dot film of the present invention includes the following steps:

步驟51：提供該基材1。Step 51: Provide the substrate 1.

步驟52：將有機材料氣化後，利用濺鍍機台將有機材料與無機材料混合在一起，並利用濺鍍方式將材料披覆形成於該基材1上，以在該基材1上形成該阻水層2。有機材料與無機材料利用濺鍍方式形成鍵結，這樣的成型膜不易產生裂縫，能為阻水性能帶來很好的效果。Step 52: After the organic material is vaporized, the organic material and the inorganic material are mixed together using a sputtering machine, and the material is coated on the substrate 1 by sputtering to form on the substrate 1 The water blocking layer 2. Organic materials and inorganic materials are sputtered to form bonds. Such a formed film is not prone to cracks and can bring good effects on water blocking performance.

步驟53：在該阻水層2上形成該結合層3，本步驟是於該阻水層2上披覆形成熱固型有機材料，並透過熱固化製程使該有機材料固化，即形成該結合層3。Step 53: Form the bonding layer 3 on the water blocking layer 2. In this step, a thermosetting organic material is formed on the water blocking layer 2, and the organic material is cured through a thermal curing process to form the bonding Layer 3.

步驟54：在該結合層3上形成該作用層4。具體來說，該作用層4的製備可以先將該等量子點42分散於一用於形成該主體41的膠態系統中，該膠態系統的材料為可透光的樹脂，並具有光均勻效果，接著再利用塗佈方式塗佈於該阻水層2表面，形成一膠膜，接著可視該等量子點42的材料選擇是否進行退火，而可得到該作用層4，其中進行退火能改變其量子能階或缺陷，以提升發光效率。Step 54: Form the active layer 4 on the bonding layer 3. Specifically, the preparation of the active layer 4 can first disperse the quantum dots 42 in a colloidal system for forming the body 41, the material of the colloidal system is a light-permeable resin, and has uniform light The effect is then applied to the surface of the water blocking layer 2 by coating to form an adhesive film, and then depending on whether the quantum dots 42 are selected for annealing, the active layer 4 can be obtained, in which annealing can change Its quantum energy level or defect to improve the luminous efficiency.

藉由單一的該阻水層2同時包含有機材料與無機材料，其中無機材料具有良好的阻水氣效果，能避免作用層4受到水氣影響，從而延長該作用層4壽命並維持良好品質。更進一步地，加上該結合層3也能幫助阻水氣，從而有效提升本發明整體的阻水性能。而且有機材料具有較佳的可撓性佳，能提升該阻水層2與該基材1間、該阻水層2與該結合層3間，以及該結合層3與該作用層4間的結合力，使各膜層之間穩固結合、阻水性能佳。相對於以往設置有機材料與無機材料等三層層體才能阻水，本發明則是在具有良好阻水性的同時，還能有效降低薄膜整體厚度，有利於其應用產品之薄型化，例如應用於顯示器的背光模組中，可以使顯示器整體薄型化，有助於提升產品競爭力。The single water-blocking layer 2 contains both organic materials and inorganic materials. The inorganic material has a good water-barrier effect, which can prevent the active layer 4 from being affected by moisture, thereby extending the life of the active layer 4 and maintaining good quality. Furthermore, the combination layer 3 can also help to block water vapor, thereby effectively improving the overall water blocking performance of the present invention. Moreover, the organic material has better flexibility and can improve the distance between the water blocking layer 2 and the substrate 1, the water blocking layer 2 and the bonding layer 3, and between the bonding layer 3 and the active layer 4 The binding force makes the membranes firmly bonded and has good water blocking performance. Compared with the conventional three-layer structure of organic materials and inorganic materials, water can be blocked. The present invention has good water resistance and can effectively reduce the overall thickness of the film, which is conducive to the thinning of its application products, such as In the backlight module of the display, the whole display can be thinned, which helps to enhance the competitiveness of the product.

惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。However, the above are only examples of the present invention, and should not be used to limit the scope of the present invention. Any simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the content of the patent specification are still classified as This invention covers the patent.

1‧‧‧基材2‧‧‧阻水層3‧‧‧結合層4‧‧‧作用層41‧‧‧主體42‧‧‧量子點51~53‧‧‧步驟 1‧‧‧Substrate 2‧‧‧Water blocking layer 3‧‧‧Combination layer 4‧‧‧Function layer 41‧‧‧Main body 42‧‧‧ Quantum dots 51~53‧‧‧ Steps

本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是本發明量子點薄膜的一實施例的一示意圖；及 圖2是一流程圖，說明該量子點薄膜的製造方法的一實施例。Other features and functions of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: FIG. 1 is a schematic diagram of an embodiment of a quantum dot film of the present invention; and FIG. 2 is a flowchart illustrating the An embodiment of a method of manufacturing a quantum dot thin film.

1‧‧‧基材 1‧‧‧ Base material

2‧‧‧阻水層 2‧‧‧Water blocking layer

3‧‧‧結合層 3‧‧‧Combination layer

4‧‧‧作用層 4‧‧‧ Active layer

41‧‧‧主體 41‧‧‧Main

42‧‧‧量子點 42‧‧‧ Quantum dots

Claims (8)

一種量子點薄膜，包含：一個基材；一個阻水層，具有阻隔水氣的功能，該阻水層位於該基材上，並且由有機材料與無機材料混合形成，該有機材料為六甲基二矽氧烷，該無機材料為金屬氮化物、金屬氧化物或金屬氮氧化物；及一個作用層，位於該阻水層上方，並包括一個主體，以及數個摻混於該主體中的量子點。 A quantum dot film, comprising: a base material; a water blocking layer, which has a function of blocking water vapor, the water blocking layer is located on the base material, and is formed by mixing organic materials and inorganic materials, the organic material is hexamethyl Disiloxane, the inorganic material is a metal nitride, a metal oxide, or a metal oxynitride; and an active layer above the water blocking layer, and includes a main body, and several quantum ions mixed in the main body point. 如請求項1所述的量子點薄膜，其中，該基材材料為聚乙烯對苯二甲酸酯。 The quantum dot film according to claim 1, wherein the base material is polyethylene terephthalate. 如請求項1或2所述的量子點薄膜，其中，該阻水層的厚度為5nm~200nm。 The quantum dot film according to claim 1 or 2, wherein the thickness of the water blocking layer is 5 nm to 200 nm. 如請求項1所述的量子點薄膜，還包含一層位於該阻水層與該作用層間的結合層，該結合層為有機材料。 The quantum dot film according to claim 1, further comprising a bonding layer between the water blocking layer and the active layer, the bonding layer being an organic material. 一種量子點薄膜的製造方法，包含：提供一個基材；將有機材料與無機材料混合在一起，並利用濺鍍方式披覆形成於該基材上，以在該基材上形成一個阻水層，該有機材料為六甲基二矽氧烷，該無機材料為金屬氮化物、金屬氧化物或金屬氮氧化物；及形成一個具有數個量子點的作用層。 A method for manufacturing quantum dot thin film, comprising: providing a base material; mixing organic materials and inorganic materials together, and forming the base material on the base material by sputtering to form a water blocking layer on the base material The organic material is hexamethyldisilaxane, the inorganic material is metal nitride, metal oxide or metal oxynitride; and an active layer with several quantum dots is formed. 如請求項5所述的量子點薄膜的製造方法，其中，該基材材料為聚乙烯對苯二甲酸酯。 The method for manufacturing a quantum dot film according to claim 5, wherein the base material is polyethylene terephthalate. 如請求項5或6所述的量子點薄膜的製造方法，其中，該阻水層的厚度為5nm~200nm。 The method for manufacturing a quantum dot thin film according to claim 5 or 6, wherein the thickness of the water blocking layer is 5 nm to 200 nm. 如請求項5所述的量子點薄膜的製造方法，其中，在形成該作用層之前，先在該阻水層上形成一層結合層，該結合層為有機材料。 The method for manufacturing a quantum dot thin film according to claim 5, wherein before forming the active layer, a bonding layer is formed on the water blocking layer, and the bonding layer is an organic material.
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