TWI688857B - 不增加接腳成本之對高容量類sdram記憶體進行定址的方法、使用其之記憶體裝置及其記憶體模組 - Google Patents

不增加接腳成本之對高容量類sdram記憶體進行定址的方法、使用其之記憶體裝置及其記憶體模組 Download PDF

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TWI688857B
TWI688857B TW106104984A TW106104984A TWI688857B TW I688857 B TWI688857 B TW I688857B TW 106104984 A TW106104984 A TW 106104984A TW 106104984 A TW106104984 A TW 106104984A TW I688857 B TWI688857 B TW I688857B
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row
address
column
subset
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TW106104984A
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TW201732601A (zh
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張牧天
牛迪民
鄭宏忠
林璇渶
金寅東
崔璋石
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南韓商三星電子股份有限公司
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1018—Serial bit line access mode, e.g. using bit line address shift registers, bit line address counters, bit line burst counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Memory System (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
TW106104984A 2016-03-03 2017-02-16 不增加接腳成本之對高容量類sdram記憶體進行定址的方法、使用其之記憶體裝置及其記憶體模組 TWI688857B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201662303353P 2016-03-03 2016-03-03
US62/303,353 2016-03-03
US201662347569P 2016-06-08 2016-06-08
US62/347,569 2016-06-08
US15/227,911 US9837135B2 (en) 2016-03-03 2016-08-03 Methods for addressing high capacity SDRAM-like memory without increasing pin cost
US15/227,911 2016-08-03

Publications (2)

Publication Number Publication Date
TW201732601A TW201732601A (zh) 2017-09-16
TWI688857B true TWI688857B (zh) 2020-03-21

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TW106104984A TWI688857B (zh) 2016-03-03 2017-02-16 不增加接腳成本之對高容量類sdram記憶體進行定址的方法、使用其之記憶體裝置及其記憶體模組

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US (2) US9837135B2 (enExample)
JP (1) JP7007092B2 (enExample)
KR (1) KR102753865B1 (enExample)
CN (1) CN107154270B (enExample)
TW (1) TWI688857B (enExample)

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TWI714487B (zh) * 2017-12-28 2020-12-21 慧榮科技股份有限公司 記憶卡控制器以及使用於記憶卡控制器的方法
US10866746B2 (en) 2017-12-28 2020-12-15 Silicon Motion Inc. Memory addressing methods and associated controller, memory device and host
WO2020219293A1 (en) 2019-04-26 2020-10-29 Rambus Inc. Memory controller partitioning for hybrid memory system
US11164613B2 (en) 2019-12-02 2021-11-02 Micron Technology, Inc. Processing multi-cycle commands in memory devices, and related methods, devices, and systems

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US20020129220A1 (en) * 2001-03-08 2002-09-12 International Business Machines Corporation Reducing resource collisions associated with memory units in a multi-level hierarchy memory system
TW200413913A (en) * 2002-12-31 2004-08-01 Intel Corp Read-write switching method for a memory controller
TW201007461A (en) * 2008-06-30 2010-02-16 Intel Corp Memory throughput increase via fine granularity of precharge management
US20150098287A1 (en) * 2013-10-07 2015-04-09 SK Hynix Inc. Memory device and operation method of memory device and memory system
US20150138895A1 (en) * 2013-11-11 2015-05-21 Rambus Inc. High capacity memory system using standard controller component

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JP3872922B2 (ja) * 1999-06-28 2007-01-24 株式会社東芝 半導体記憶装置及びメモリ混載ロジックｌｓｉ
JP3702158B2 (ja) * 2000-09-01 2005-10-05 株式会社ルネサステクノロジ 半導体メモリ装置
KR100660892B1 (ko) 2005-11-21 2006-12-26 삼성전자주식회사 더블 펌프드 어드레스 스킴의 메모리 장치에서 고속 동작을위해 확장된 유효 어드레스 윈도우로 유효 커맨드를샘플링하는 회로 및 방법
US7936639B2 (en) * 2007-09-27 2011-05-03 Micron Technology, Inc. System and method for processing signals in high speed DRAM
EP3467832B1 (en) * 2010-12-17 2020-05-20 Everspin Technologies, Inc. Memory controller and method for interleaving dram and mram accesses
US9251874B2 (en) 2010-12-21 2016-02-02 Intel Corporation Memory interface signal reduction
US10902890B2 (en) 2012-06-22 2021-01-26 Intel Corporation Method, apparatus and system for a per-DRAM addressability mode
US9104646B2 (en) 2012-12-12 2015-08-11 Rambus Inc. Memory disturbance recovery mechanism
CN105027213A (zh) * 2013-03-12 2015-11-04 惠普发展公司，有限责任合伙企业 可编程地址映射和存储器访问操作

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US6108745A (en) * 1997-10-31 2000-08-22 Hewlett-Packard Company Fast and compact address bit routing scheme that supports various DRAM bank sizes and multiple interleaving schemes
US20020129220A1 (en) * 2001-03-08 2002-09-12 International Business Machines Corporation Reducing resource collisions associated with memory units in a multi-level hierarchy memory system
TW200413913A (en) * 2002-12-31 2004-08-01 Intel Corp Read-write switching method for a memory controller
TW201007461A (en) * 2008-06-30 2010-02-16 Intel Corp Memory throughput increase via fine granularity of precharge management
US20150098287A1 (en) * 2013-10-07 2015-04-09 SK Hynix Inc. Memory device and operation method of memory device and memory system
US20150138895A1 (en) * 2013-11-11 2015-05-21 Rambus Inc. High capacity memory system using standard controller component

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Publication number Publication date
US9837135B2 (en) 2017-12-05
JP7007092B2 (ja) 2022-01-24
CN107154270A (zh) 2017-09-12
CN107154270B (zh) 2019-07-30
US10504572B2 (en) 2019-12-10
KR102753865B1 (ko) 2025-01-15
JP2017157209A (ja) 2017-09-07
KR20170104116A (ko) 2017-09-14
TW201732601A (zh) 2017-09-16
US20170256311A1 (en) 2017-09-07
US20180102152A1 (en) 2018-04-12

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