TWI688668B - 具有可拆卸式氣體分配板之噴淋頭 - Google Patents
具有可拆卸式氣體分配板之噴淋頭 Download PDFInfo
- Publication number
- TWI688668B TWI688668B TW106129239A TW106129239A TWI688668B TW I688668 B TWI688668 B TW I688668B TW 106129239 A TW106129239 A TW 106129239A TW 106129239 A TW106129239 A TW 106129239A TW I688668 B TWI688668 B TW I688668B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas distribution
- distribution plate
- main body
- processing chamber
- shower head
- Prior art date
Links
- 238000009826 distribution Methods 0.000 title claims abstract description 107
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 35
- 238000001816 cooling Methods 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 102
- 239000004020 conductor Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 5
- 230000015654 memory Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/005—Nozzles or other outlets specially adapted for discharging one or more gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/14—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with multiple outlet openings; with strainers in or outside the outlet opening
- B05B1/18—Roses; Shower heads
- B05B1/185—Roses; Shower heads characterised by their outlet element; Mounting arrangements therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361756545P | 2013-01-25 | 2013-01-25 | |
| US61/756,545 | 2013-01-25 | ||
| US13/833,257 US9610591B2 (en) | 2013-01-25 | 2013-03-15 | Showerhead having a detachable gas distribution plate |
| US13/833,257 | 2013-03-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201739944A TW201739944A (zh) | 2017-11-16 |
| TWI688668B true TWI688668B (zh) | 2020-03-21 |
Family
ID=51221555
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106129239A TWI688668B (zh) | 2013-01-25 | 2014-01-09 | 具有可拆卸式氣體分配板之噴淋頭 |
| TW103100867A TWI607108B (zh) | 2013-01-25 | 2014-01-09 | 具有可拆卸式氣體分配板之噴淋頭 |
| TW109105142A TWI728707B (zh) | 2013-01-25 | 2014-01-09 | 具有可拆卸式氣體分配板之噴淋頭 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103100867A TWI607108B (zh) | 2013-01-25 | 2014-01-09 | 具有可拆卸式氣體分配板之噴淋頭 |
| TW109105142A TWI728707B (zh) | 2013-01-25 | 2014-01-09 | 具有可拆卸式氣體分配板之噴淋頭 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9610591B2 (enExample) |
| JP (3) | JP6453240B2 (enExample) |
| KR (3) | KR101874919B1 (enExample) |
| CN (2) | CN107578976B (enExample) |
| TW (3) | TWI688668B (enExample) |
| WO (1) | WO2014116489A1 (enExample) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9267205B1 (en) * | 2012-05-30 | 2016-02-23 | Alta Devices, Inc. | Fastener system for supporting a liner plate in a gas showerhead reactor |
| US9610591B2 (en) | 2013-01-25 | 2017-04-04 | Applied Materials, Inc. | Showerhead having a detachable gas distribution plate |
| US9597701B2 (en) * | 2013-12-31 | 2017-03-21 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| US9657397B2 (en) * | 2013-12-31 | 2017-05-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| US10077497B2 (en) * | 2014-05-30 | 2018-09-18 | Lam Research Corporation | Hollow cathode discharge (HCD) suppressing capacitively coupled plasma electrode and gas distribution faceplate |
| US9911579B2 (en) * | 2014-07-03 | 2018-03-06 | Applied Materials, Inc. | Showerhead having a detachable high resistivity gas distribution plate |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US9905400B2 (en) * | 2014-10-17 | 2018-02-27 | Applied Materials, Inc. | Plasma reactor with non-power-absorbing dielectric gas shower plate assembly |
| US10167552B2 (en) * | 2015-02-05 | 2019-01-01 | Lam Research Ag | Spin chuck with rotating gas showerhead |
| US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| KR102537309B1 (ko) * | 2015-10-08 | 2023-05-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 감소된 배면 플라즈마 점화를 갖는 샤워헤드 |
| CN105483620B (zh) * | 2015-11-27 | 2018-03-30 | 京东方科技集团股份有限公司 | 喷嘴部件、蒸镀装置及制作有机发光二极管器件的方法 |
| US10373810B2 (en) | 2016-02-21 | 2019-08-06 | Applied Materials, Inc. | Showerhead having an extended detachable gas distribution plate |
| CN109075059B (zh) * | 2016-06-15 | 2023-12-01 | 应用材料公司 | 用于高功率等离子体蚀刻处理的气体分配板组件 |
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| US10607817B2 (en) * | 2016-11-18 | 2020-03-31 | Applied Materials, Inc. | Thermal repeatability and in-situ showerhead temperature monitoring |
| US11367591B2 (en) * | 2016-12-06 | 2022-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite plasma modulator for plasma chamber |
| US20180230597A1 (en) * | 2017-02-14 | 2018-08-16 | Applied Materials, Inc. | Method and apparatus of remote plasmas flowable cvd chamber |
| CN108531886B (zh) * | 2017-03-01 | 2020-09-25 | 广东众元半导体科技有限公司 | 一种可拆卸式化学气相沉积喷淋装置 |
| US20180366354A1 (en) | 2017-06-19 | 2018-12-20 | Applied Materials, Inc. | In-situ semiconductor processing chamber temperature apparatus |
| US11598003B2 (en) * | 2017-09-12 | 2023-03-07 | Applied Materials, Inc. | Substrate processing chamber having heated showerhead assembly |
| US10633297B2 (en) | 2018-03-16 | 2020-04-28 | Ngk Insulators, Ltd. | Method of manufacturing honeycomb structure |
| JP7182916B2 (ja) * | 2018-06-26 | 2022-12-05 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US10954595B2 (en) * | 2019-07-30 | 2021-03-23 | Applied Materials, Inc. | High power showerhead with recursive gas flow distribution |
| JP7278175B2 (ja) * | 2019-08-23 | 2023-05-19 | 東京エレクトロン株式会社 | 基板処理装置、基板処理装置の製造方法及びメンテナンス方法 |
| TWI857147B (zh) * | 2019-10-04 | 2024-10-01 | 美商應用材料股份有限公司 | 用於易碎板以防止破裂的氣體分配組件安裝 |
| KR102695926B1 (ko) | 2019-10-07 | 2024-08-16 | 삼성전자주식회사 | 가스 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| TWI849257B (zh) | 2019-11-16 | 2024-07-21 | 美商應用材料股份有限公司 | 具有嵌入式螺帽的噴淋頭 |
| CN113000233B (zh) * | 2019-12-18 | 2022-09-02 | 中微半导体设备(上海)股份有限公司 | 等离子体反应器及其气体喷嘴 |
| US20210331183A1 (en) * | 2020-04-24 | 2021-10-28 | Applied Materials, Inc. | Fasteners for coupling components of showerhead assemblies |
| US11242600B2 (en) * | 2020-06-17 | 2022-02-08 | Applied Materials, Inc. | High temperature face plate for deposition application |
| CN114121582B (zh) * | 2020-08-27 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其工作方法 |
| KR102818589B1 (ko) * | 2020-09-15 | 2025-06-10 | 주식회사 원익아이피에스 | 샤워헤드조립체 및 그를 가지는 기판처리장치 |
| US12230480B2 (en) | 2020-11-02 | 2025-02-18 | Changxin Memory Technologies, Inc. | Detaching and installing device for gas distribution plate of etching machine, and etching machine |
| CN114446749B (zh) * | 2020-11-02 | 2023-10-24 | 长鑫存储技术有限公司 | 刻蚀机的气体分布板的拆装装置和刻蚀机 |
| EP4393002A4 (en) * | 2021-08-25 | 2025-08-13 | Applied Materials Inc | TIGHT DUAL CHANNEL SHOWER HEAD |
| TWI803075B (zh) * | 2021-11-29 | 2023-05-21 | 春田科技顧問股份有限公司 | 裝載埠層流氣簾裝置 |
| WO2023136814A1 (en) * | 2022-01-11 | 2023-07-20 | Lam Research Corporation | Plasma radical edge ring barrier seal |
| JP2025509160A (ja) * | 2022-03-08 | 2025-04-11 | ラム リサーチ コーポレーション | 基板処理システム内でプロセスガスおよびプロセス副生成物の流れを導く台座シュラウド |
| JP7717015B2 (ja) * | 2022-03-18 | 2025-08-01 | 東京エレクトロン株式会社 | 上部電極及びプラズマ処理装置 |
| KR20250014860A (ko) * | 2023-07-21 | 2025-02-03 | 세메스 주식회사 | 샤워헤드 어셈블리를 포함하는 기판 처리 장치 |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201435124A (zh) | 2014-09-16 |
| TW202035756A (zh) | 2020-10-01 |
| JP2016511935A (ja) | 2016-04-21 |
| US20200238303A1 (en) | 2020-07-30 |
| TW201739944A (zh) | 2017-11-16 |
| CN104995719B (zh) | 2017-12-19 |
| KR102073941B1 (ko) | 2020-02-05 |
| TWI728707B (zh) | 2021-05-21 |
| TWI607108B (zh) | 2017-12-01 |
| JP2018049830A (ja) | 2018-03-29 |
| JP2019068090A (ja) | 2019-04-25 |
| CN104995719A (zh) | 2015-10-21 |
| KR20150109463A (ko) | 2015-10-01 |
| US11130142B2 (en) | 2021-09-28 |
| KR20200013121A (ko) | 2020-02-05 |
| US20170178863A1 (en) | 2017-06-22 |
| KR20170115626A (ko) | 2017-10-17 |
| JP6453240B2 (ja) | 2019-01-16 |
| JP6728117B2 (ja) | 2020-07-22 |
| US20140209027A1 (en) | 2014-07-31 |
| CN107578976A (zh) | 2018-01-12 |
| KR101874919B1 (ko) | 2018-07-05 |
| KR102196995B1 (ko) | 2020-12-30 |
| US10625277B2 (en) | 2020-04-21 |
| CN107578976B (zh) | 2020-09-08 |
| WO2014116489A1 (en) | 2014-07-31 |
| US9610591B2 (en) | 2017-04-04 |
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