TWI687984B - 晶圓的加工方法 - Google Patents
晶圓的加工方法 Download PDFInfo
- Publication number
- TWI687984B TWI687984B TW104141529A TW104141529A TWI687984B TW I687984 B TWI687984 B TW I687984B TW 104141529 A TW104141529 A TW 104141529A TW 104141529 A TW104141529 A TW 104141529A TW I687984 B TWI687984 B TW I687984B
- Authority
- TW
- Taiwan
- Prior art keywords
- predetermined
- along
- wafer
- laser light
- dividing line
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015006411A JP6430836B2 (ja) | 2015-01-16 | 2015-01-16 | ウエーハの加工方法 |
JP2015-006411 | 2015-01-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201637084A TW201637084A (zh) | 2016-10-16 |
TWI687984B true TWI687984B (zh) | 2020-03-11 |
Family
ID=56464382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104141529A TWI687984B (zh) | 2015-01-16 | 2015-12-10 | 晶圓的加工方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6430836B2 (ko) |
KR (1) | KR102367001B1 (ko) |
CN (1) | CN105810633B (ko) |
TW (1) | TWI687984B (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6779574B2 (ja) * | 2016-12-14 | 2020-11-04 | 株式会社ディスコ | インターポーザの製造方法 |
JP7013276B2 (ja) * | 2018-02-23 | 2022-01-31 | 株式会社ディスコ | 加工装置 |
CN108818983A (zh) * | 2018-06-12 | 2018-11-16 | 华中科技大学 | 光学硬脆性材料的微激光辅助加工系统及其使用方法 |
DE102019204457B4 (de) * | 2019-03-29 | 2024-01-25 | Disco Corporation | Substratbearbeitungsverfahren |
CN110744731B (zh) * | 2019-10-30 | 2021-07-27 | 许昌学院 | 一种基于光电控制的晶片切片设备 |
JP7430515B2 (ja) * | 2019-11-06 | 2024-02-13 | 株式会社ディスコ | ウエーハの処理方法 |
JP7153851B2 (ja) * | 2020-10-27 | 2022-10-17 | 株式会社東京精密 | レーザ加工装置及びレーザ加工方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008147412A (ja) * | 2006-12-11 | 2008-06-26 | Matsushita Electric Ind Co Ltd | 半導体ウェハ,半導体装置及び半導体ウェハの製造方法ならびに半導体装置の製造方法 |
JP2010093187A (ja) * | 2008-10-10 | 2010-04-22 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005064231A (ja) | 2003-08-12 | 2005-03-10 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
JP2005064230A (ja) | 2003-08-12 | 2005-03-10 | Disco Abrasive Syst Ltd | 板状物の分割方法 |
JP4422463B2 (ja) * | 2003-11-07 | 2010-02-24 | 株式会社ディスコ | 半導体ウエーハの分割方法 |
JP2005228892A (ja) | 2004-02-12 | 2005-08-25 | Toshiba Corp | 半導体ウェーハと半導体素子およびその製造方法 |
JP4571850B2 (ja) * | 2004-11-12 | 2010-10-27 | 東京応化工業株式会社 | レーザーダイシング用保護膜剤及び該保護膜剤を用いたウエーハの加工方法 |
JP2007173475A (ja) | 2005-12-21 | 2007-07-05 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2009021476A (ja) | 2007-07-13 | 2009-01-29 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP5453123B2 (ja) | 2010-01-19 | 2014-03-26 | 株式会社ディスコ | 切削方法 |
JP2011210915A (ja) | 2010-03-30 | 2011-10-20 | Shindengen Electric Mfg Co Ltd | 単結晶基板の切断装置、および単結晶基板の切断方法 |
JP6037659B2 (ja) * | 2012-05-25 | 2016-12-07 | 株式会社ディスコ | ウェーハの分割方法 |
JP2014135348A (ja) * | 2013-01-09 | 2014-07-24 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
-
2015
- 2015-01-16 JP JP2015006411A patent/JP6430836B2/ja active Active
- 2015-12-10 TW TW104141529A patent/TWI687984B/zh active
-
2016
- 2016-01-12 KR KR1020160003576A patent/KR102367001B1/ko active IP Right Grant
- 2016-01-13 CN CN201610021223.5A patent/CN105810633B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008147412A (ja) * | 2006-12-11 | 2008-06-26 | Matsushita Electric Ind Co Ltd | 半導体ウェハ,半導体装置及び半導体ウェハの製造方法ならびに半導体装置の製造方法 |
JP2010093187A (ja) * | 2008-10-10 | 2010-04-22 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105810633A (zh) | 2016-07-27 |
KR102367001B1 (ko) | 2022-02-24 |
JP2016134413A (ja) | 2016-07-25 |
CN105810633B (zh) | 2020-02-21 |
JP6430836B2 (ja) | 2018-11-28 |
KR20160088808A (ko) | 2016-07-26 |
TW201637084A (zh) | 2016-10-16 |
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