TWI683347B - Substrate processing device, manufacturing method of semiconductor device, and recording medium - Google Patents

Substrate processing device, manufacturing method of semiconductor device, and recording medium Download PDF

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TWI683347B
TWI683347B TW107102304A TW107102304A TWI683347B TW I683347 B TWI683347 B TW I683347B TW 107102304 A TW107102304 A TW 107102304A TW 107102304 A TW107102304 A TW 107102304A TW I683347 B TWI683347 B TW I683347B
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substrate
gas
rotation
wafer
rotation speed
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TW107102304A
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TW201903846A (en
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林昭成
加我友紀
牛田卓朗
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日商國際電氣股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

本發明可使成膜後的膜的膜厚的基板面內均一性提升。 　　一種基板處理裝置，其係具有： 　　處理室，其係處理基板； 　　基板保持具，其係於前述處理室內保持前述基板； 　　旋轉機構，其係使前述基板保持具旋轉；及 　　控制部，其係控制前述旋轉機構來控制前述基板保持具的旋轉速度， 　　前述控制部，係被構成為：不變更預先被設定的每1旋轉的時間，以前述基板保持具的旋轉速度會在1旋轉內變化的方式控制前述旋轉機構。The present invention can improve the in-plane uniformity of the film thickness of the film after film formation. A substrate processing apparatus comprising: a 　　 processing chamber, which processes a substrate; a 　　 substrate holder, which holds the substrate in the processing chamber; a 　　 rotation mechanism, which rotates the substrate holder; and a control section, which controls The rotation mechanism controls the rotation speed of the substrate holder. The control unit is configured such that the rotation speed of the substrate holder changes within one rotation without changing the time per rotation set in advance. Control the aforementioned rotating mechanism.

Description

基板處理裝置、半導體裝置的製造方法及記錄媒體Substrate processing device, manufacturing method of semiconductor device, and recording medium

[0001] 本發明是有關基板處理裝置、半導體裝置的製造方法及程式。[0001] The present invention relates to a method and program for manufacturing a substrate processing device and a semiconductor device.

[0002] 隨著近年來的半導體裝置的高集成化･微細化，被要求成膜對象的薄膜化，基板面內的均一成膜困難。特別是在將複數片的基板保持成垂直多段來處理的所謂縱型基板處理裝置中，由於因為基板保持具的保持柱而對成膜產生影響，所以有例如藉由控制基板保持具的旋轉速度或控制氣體供給時機來謀求面內均一性的提升之方法(例如參照專利文獻1，2)。 先前技術文獻 專利文獻 　　[0003] 　　專利文獻1：日本特開2010-123752號公報 　　專利文獻2：國際公開第2005/088692號[0002] With the recent increase in integration and miniaturization of semiconductor devices, thinning of the film formation target is required, and uniform film formation on the substrate surface is difficult. In particular, in a so-called vertical substrate processing apparatus that processes a plurality of substrates in a vertical and multiple stages, since the holding column of the substrate holder affects the film formation, for example, by controlling the rotation speed of the substrate holder Or a method of controlling gas supply timing to improve in-plane uniformity (for example, refer to Patent Documents 1 and 2). Prior Art Literature Patent Literature 　　[0003] 　　 Patent Literature 1: Japanese Patent Laid-Open No. 2010-123752 　　 Patent Literature 2: International Publication No. 2005/088692

(發明所欲解決的課題) 　　[0004] 為了使被要求的薄膜的面內均一性提升，即使利用上述般的技術，也會有不夠充分的情況。 　　[0005] 本發明的目的是在於提供一種可使成膜後的膜的膜厚的基板面內均一性提升。 (用以解決課題的手段) 　　[0006] 若根據本發明之一形態，則可提供一種構成如以下般的技術， 　　具有： 　　處理室，其係處理基板； 　　基板保持具，其係於前述處理室內保持前述基板； 　　旋轉機構，其係使前述基板保持具旋轉；及 　　控制部，其係控制前述旋轉機構來控制前述基板保持具的旋轉速度， 　　前述控制部，係被構成為：不變更預先被設定的每1旋轉的時間，以前述基板保持具的旋轉速度會在1旋轉內變化的方式控制前述旋轉機構。 [發明的效果] 　　[0007] 若根據本發明，則可提供一種可使成膜後的膜的膜厚的基板面內均一性提升的技術。(Problem to be Solved by the Invention) [0004] In order to improve the in-plane uniformity of the required thin film, even if the above-mentioned technique is used, it may be insufficient. [0005] An object of the present invention is to provide an in-plane uniformity of a film thickness of a film after film formation. (Means for solving the problem) 　　 [0006] According to one aspect of the present invention, it is possible to provide a technique having the following structure, 　　 has: 　　 processing chamber, which processes the substrate; 　　 substrate holder, which is located in the aforementioned processing chamber Holding the substrate; 　　 rotation mechanism, which rotates the substrate holder; and a control section, which controls the rotation mechanism to control the rotation speed of the substrate holder, 　　 the control section, is configured to be set without changing in advance For each rotation time, the rotation mechanism is controlled such that the rotation speed of the substrate holder changes within one rotation. [Effects of the Invention] [0007] According to the present invention, it is possible to provide a technique that can improve the uniformity of the film thickness of the film after film formation in the substrate surface.

[0009] 以下，一邊參照圖1~圖5，一邊說明有關本發明之一實施形態。 　　[0010] (1)基板處理裝置的構成 (加熱裝置) 　　如圖1所示般，處理爐202是具有作為加熱裝置(加熱機構)的加熱器207。加熱器207是圓筒形狀，藉由被支撐於作為保持板的加熱器基底(未圖示)來垂直地安裝。加熱器207亦具有作為以熱來使氣體活化(激發)的活化機構(激發部)的機能。 　　[0011] (處理室) 　　在加熱器207的內側是與加熱器207同心圓狀地配設有反應管203。反應管203是由例如石英(SiO2 )或碳化矽(SiC)等的耐熱性材料所成，形成上端閉塞，下端開口的圓筒形狀。在反應管203的下方是與反應管203同心圓狀地配設有集合管(manifold)(入口法蘭(Inlet flange))209。集合管209是由例如不鏽鋼(SUS)等的金屬所成，形成上端及下端開口的圓筒形狀。集合管209的上端部是與反應管203的下端部卡合，構成為支撐反應管203。在集合管209與反應管203之間是設有作為密封構件的O型環220a。藉由集合管209被支撐於加熱器基底，反應管203是成為垂直安裝的狀態。主要藉由反應管203及集合管209來構成處理容器(反應容器)。在處理容器的筒中空部是形成有處理室201。處理室201是構成可收容作為複數片的基板之晶圓200。另外，處理容器是不限於上述的構成，也有只將反應管203稱為處理容器的情況。 　　[0012] 在處理室201內，噴嘴249a，249b會被設置成為貫通集合管209的側壁。噴嘴249a，249b是分別連接氣體供給管232a，232b。如此，在反應管203是設有2個的噴嘴249a，249b及2個的氣體供給管232a，232b，可對處理室201內供給複數種類的氣體。另外，在不設置集合管209，只以反應管203作為處理容器時，噴嘴249a，249b是亦可設成貫通反應管203的側壁。 　　[0013] 在氣體供給管232a，232b，從上游側依序分別設有流量控制器(流量控制部)的質量流控制器(MFC) 241a，241b及開閉閥的閥243a，243b。在比氣體供給管232a，232b的閥243a，243b更下游側是分別連接有供給惰性氣體的氣體供給管232c，232d。在氣體供給管232c，232d是從上游側依序分別設有MFC 241c，241d及閥243c，243d。 　　[0014] 噴嘴249a是如圖2所示般，在反應管203的內壁與晶圓200之間的平面視圓環狀的空間，從反應管203的內壁的下部沿至上部，以朝向晶圓200的積載方向上方立起之方式設置。亦即，噴嘴249a是在配列有晶圓200的晶圓配列領域的側方之水平地包圍晶圓配列領域的領域，以沿著晶圓配列領域的方式設置。亦即，噴嘴249a是在朝處理室201內搬入的各晶圓200的端部(周緣部、邊緣部)的側方與晶圓200的表面(平坦面)垂直地設置。在噴嘴249a的側面是設有供給氣體的氣體供給孔250a。氣體供給孔250a是以朝向反應管203的中心之方式開口，可朝向晶圓200供給氣體。氣體供給孔250a是從反應管203的下部到上部設置複數個。 　　[0015] 噴嘴249b是被設在氣體分散空間的緩衝室237內。緩衝室237是如圖2所示般，在反應管203的內壁與晶圓200之間的平面視圓環狀的空間，且在從反應管203的內壁的下部到上部的部分，沿著晶圓200的積載方向而設。亦即，緩衝室237是在水平地包圍晶圓配列領域的側方的晶圓配列領域之領域，以沿著晶圓配列領域的方式藉由緩衝構造(緩衝部)300來形成。緩衝構造300是藉由石英等的絕緣物所構成，在被形成緩衝構造300的圓弧狀的壁面是設有供給氣體或後述的活性種之氣體供給孔250c。氣體供給孔250c是以朝向反應管203的中心之方式開口，可朝向晶圓200供給氣體。氣體供給孔250c是從反應管203的下部到上部設置複數個。 　　[0016] 噴嘴249b是在與緩衝室237之設有氣體供給孔250c的端部相反側的端部，從反應管203的內壁的下部沿至上部，以朝向晶圓200的積載方向上方立起之方式設置。亦即，噴嘴249b是在緩衝構造300的內側，即配列有晶圓200的晶圓配列領域的側方之水平地包圍晶圓配列領域的領域，以沿著晶圓配列領域的方式設置。亦即，噴嘴249b是在朝處理室201內搬入的晶圓200的端部的側方與晶圓200的表面垂直地設置。在噴嘴249b的側面是設有供給氣體的氣體供給孔250b。氣體供給孔250b是以朝向緩衝室237的中心之方式開口。氣體供給孔250b是與氣體供給孔250c同樣，從反應管203的下部到上部設置複數個。 　　[0017] 從氣體供給管232a是作為含預定元素的原料，例如含作為預定元素的矽(Si)之矽烷原料氣體會經由MFC 241a、閥243a、噴嘴249a來朝處理室201內供給。 　　[0018] 矽烷原料氣體是例如可使用含Si及鹵元素的原料氣體，亦即鹵矽烷原料氣體。所謂鹵矽烷原料是具有鹵基的矽烷原料。鹵矽烷原料氣體是例如可使用含Si及Cl的原料氣體，亦即氯矽烷原料氣體。氯矽烷原料氣體是例如可使用二氯矽烷(SiH2 Cl2 ；略稱：DCS)氣體。 　　[0019] 從氣體供給管232b是化學構造與原料不同的反應體(反應劑)，例如，含氮(N)氣體(氮化劑、氮化氣體)會經由MFC 241b、閥243b、噴嘴249b來朝處理室201內供給。氮化劑是例如可使用氨(NH3 )氣體。使用NH3 氣體作為氮化劑時，例如，使用後述的電漿源來電漿激發此氣體，作為電漿激發氣體供給。 　　[0020] 從氣體供給管232c，232d是惰性氣體，例如氮(N2 )氣體會分別經由MFC 241c，241d、閥243c，243d、氣體供給管232a，232b、噴嘴249a，249b來朝處理室201內供給。 　　[0021] 主要藉由氣體供給管232a、MFC 241a、閥243a來構成作為第1氣體供給系的原料供給系。主要藉由氣體供給管232b、MFC 241b、閥243b來構成作為第2氣體供給系的反應體供給系(反應劑供給系)。主要藉由氣體供給管232c，232d、MFC 241c，241d、閥243c，243d來構成惰性氣體供給系。也將原料供給系、反應體供給系及惰性氣體供給系簡稱為氣體供給系(氣體供給部)。另外，亦可思考在原料供給系中含噴嘴249a，且在反應體供給系中含噴嘴249b，或亦可思考在惰性氣體供給系中含噴嘴249a，249b。 　　[0022] (電漿生成部) 　　在緩衝室237內，如圖2所示般，由導電體所成，具有細長的構造之2根的棒狀電極269，270會從反應管203的下部到上部沿著晶圓200的配列方向而配設。棒狀電極269，270的各者是與噴嘴249b平行設置。棒狀電極269，270的各者是從上部到下部藉由電極保護管275來覆蓋，藉此被保護。棒狀電極269，270的其中任一方是經由匹配器272來連接至高頻電源273，另一方是被接地至基準電位的地線。從高頻電源273施加高頻(RF)電力至棒狀電極269，270間，藉此在棒狀電極269，270間的電漿生成領域224產生電漿。主要藉由棒狀電極269，270、電極保護管275來構成作為電漿生成器(電漿生成部)的電漿源。亦可思考在電漿源含匹配器272、高頻電源273。電漿源是如後述般，電漿激發氣體，亦即，作為使激發(活化)成電漿狀態的電漿激發部(活化機構)的機能。 　　[0023] 電極保護管275是成為將棒狀電極269，270的各者與緩衝室237內的環境隔離的狀態下可朝緩衝室237內插入的構造。在電極保護管275的內部充填N2 氣體等的惰性氣體，或利用惰性氣體淨化機構來以N2 氣體等的惰性氣體淨化電極保護管275的內部，藉此使電極保護管275的內部的氧(O2 )濃度減低，可防止棒狀電極269，270的氧化。 　　[0024] (排氣部) 　　在反應管203是設有將處理室201內的環境排氣的排氣管231。排氣管231是經由作為檢測出處理室201內的壓力的壓力檢測器(壓力檢測部)的壓力感測器245及作為壓力調整器(壓力調整部)的APC(Auto Pressure Controller)閥244來連接作為真空排氣裝置的真空泵246。APC閥244是被構成為在使真空泵246作動的狀態下開閉閥，藉此可進行處理室201內的真空排氣及真空排氣停止，更在使真空泵246作動的狀態下，根據藉由壓力感測器245所檢測出的壓力資訊來調節閥開度，藉此可調整處理室201內的壓力。主要藉由排氣管231、APC閥244、壓力感測器245來構成排氣系。亦可思考在排氣系中含真空泵246。排氣管231是不限於設在反應管203的情況，亦可與噴嘴249a，249b同樣設在集合管209。 　　[0025] 在集合管209的下方是設有可將集合管209的下端開口氣密地閉塞之作為爐口蓋體的密封蓋219。密封蓋219是例如由SUS等的金屬所成，被形成圓盤狀。在密封蓋219的上面是設有與集合管209的下端抵接之作為密封構件的O型環220b。在密封蓋219之與處理室201相反的側設置有使後述的晶舟(boat)217旋轉的旋轉機構267。旋轉機構267的旋轉軸255是貫通密封蓋219來連接至晶舟217。旋轉機構267是被構成為藉由使晶舟217旋轉來使晶圓200旋轉。密封蓋219是被構成為藉由在反應管203的外部被垂直設置之作為昇降機構的晶舟昇降機115來昇降於垂直方向。晶舟昇降機115是被構成為可藉由使密封蓋219昇降來將晶舟217搬入及搬出至處理室201內外。晶舟昇降機115是構成為將晶舟217亦即晶圓200搬送至處理室201內外的搬送裝置(搬送機構)。並且，在集合管209的下方是設有：藉由晶舟昇降機115來使密封蓋219降下的期間，可將集合管209的下端開口氣密地閉塞之作為爐口蓋體的遮板(shutter)219s。遮板219s是例如藉由SUS等的金屬所構成，被形成圓盤狀。在遮板219s的上面是設有與集合管209的下端抵接之作為密封構件的O型環220c。遮板219s的開閉動作(昇降動作或轉動動作等)是藉由遮板開閉機構115s來控制。 　　[0026] (基板支撐具) 　　如圖1所示般，作為基板支撐具的晶舟217是具備：上下一對的端板(亦將上部的端板稱為頂板，將下部的端板稱為底板)，及被架設在與兩端板之間而垂直配設的複數根(在本實施形態是3根)的保持柱(晶舟柱)217a~217c(在圖1中未圖示)。在本實施形態中，各保持柱217a~217c皆是被形成同樣的形狀，保持柱217a與保持柱217b及保持柱217a與保持柱217c是沿著晶圓200的周方向以成為90度間隔的方式配置，保持柱217b及保持柱217c是沿著晶圓200的周方向以成為180度間隔的方式配置。亦即，保持柱217a與保持柱217b及保持柱217a與保持柱217c的間隔是以比保持柱217b與保持柱217c的間隔更窄的方式配置。在各保持柱217a~217c是複數的保持溝217d(在圖1中未圖示)會在長度方向等間隔配置，以同樣的高度互相對向，藉此被形成為可在同樣平面內將晶圓200保持於水平。 　　[0027] 然後，晶圓200的周緣部會分別被插入至各保持柱217a~217c的複數的保持溝217d間，藉此將1片或複數片例如25~200片的晶圓200以水平姿勢且在彼此中心一致的狀態下排列於垂直方向而多段地支撐。亦即，以取預定的間隔來使配列的方式構成。晶舟217是由例如石英或SiC等的耐熱性材料所成。在晶舟217的下部，由例如石英或SiC等的耐熱性材料所成的隔熱板218會被多段地支撐。 　　[0028] 如圖2所示般，在反應管203的內部是設置有作為溫度檢測器的溫度感測器263。根據藉由溫度感測器263所檢測出的溫度資訊來調整往加熱器207的通電情況，藉此處理室201內的溫度會成為所望的溫度分布。溫度感測器263是與噴嘴249a，249b同樣沿著反應管203的內壁而設。 　　[0029] (控制裝置) 　　如圖3所示般，控制部(控制裝置)的控制器121是構成為具備CPU(Central Processing Unit)121a、RAM(Random Access Memory)121b、記憶裝置121c、I/O埠121d之電腦。RAM121b、記憶裝置121c、I/O埠121d是構成為可經由內部匯流排121e來與CPU121a資料交換。控制器121是連接例如構成為觸控面板等的輸出入裝置122。 　　[0030] 記憶裝置121c是例如以快閃記憶體、HDD (Hard Disk Drive)等所構成。在記憶裝置121c內是可讀出地儲存有控制基板處理裝置的動作之控制程式，或記載有後述的基板處理的程序或條件等的製程處方等。製程處方是被組合成為使後述的基板處理的各程序實行於控制器121，可取得預定的結果者，作為程式機能。以下，亦將製程處方或控制程式等總稱而簡稱為程式。又，亦將製程處方簡稱為處方。在本說明書中使用稱為程式的言辭時，有只包含處方單體的情況，只包含控制程式單體的情況，或包含該等的雙方的情況。RAM121b是構成為暫時性保持藉由CPU121a所讀出的程式或資料等的記憶體領域(工作區域)。 　　[0031] I/O埠121d是被連接至上述的MFC 241a~241d、閥243a~243d、壓力感測器245、APC閥244、真空泵246、加熱器207、溫度感測器263、匹配器272、高頻電源273、旋轉機構267、晶舟昇降機115、遮板開閉機構115s等。 　　[0032] CPU121a是構成為從記憶裝置121c讀出控制程式而實行，且按照來自輸出入裝置122的操作指令的輸入等，從記憶裝置121c讀出處方。CPU121a是構成為以按照讀出的處方的內容之方式，進行旋轉機構267的控制、控制MFC 241a~241d之各種氣體的流量調整動作、閥243a~ 243d的開閉動作、APC閥244的開閉動作及根據壓力感測器245的APC閥244之壓力調整動作、真空泵246的起動及停止、根據溫度感測器263的加熱器207的溫度調整動作、旋轉機構267之晶舟217的正逆旋轉、旋轉角度及旋轉速度調節動作、晶舟昇降機115之晶舟217的昇降動作、高頻電源273之朝棒狀電極269，270的高頻施加動作等。 　　[0033] 控制器121是可藉由將被儲存於外部記憶裝置(例如硬碟等的磁碟、CD等的光碟、MO等的光磁碟、USB記憶體等的半導體記憶體)123的上述的程式安裝於電腦來構成。記憶裝置121c或外部記憶裝置123是被構成為電腦可讀取的記錄媒體。以下，也將該等總稱而簡稱為記錄媒體。在本說明書中使用稱為記錄媒體的言辭時，有只包含記憶裝置121c單體的情況，只包含外部記憶裝置123單體的情況，或包含該等的雙方的情況。另外，朝電腦之程式的提供是亦可不使用外部記憶裝置123，利用網際網路或專線等的通訊手段來進行。 　　[0034] (2)基板處理工程 　　其次，一邊參照圖4，一邊說明有關使用基板處理裝置，在晶圓200上形成薄膜的工程，作為半導體裝置的製造工程的一工程。在以下的說明中，構成基板處理裝置的各部的動作是藉由控制器121來控制。 　　[0035] 在此是說明有關使供給DCS氣體作為原料氣體的步驟與供給(使電漿激發)的NH3 氣體作為反應氣體的步驟非同時亦即不同步進行預定次數(1次以上)，藉此在晶圓200上形成矽氮化膜(SiN膜)作為含Si及N的膜之例。並且，例如，在晶圓200上是亦可預先形成有預定的膜。而且，在晶圓200或預定的膜是亦可預先形成有預定的圖案。 　　[0036] 在本說明書中，基於方便起見，也有如以下般表示圖4所示的成膜處理的製程流程。 　　[0037]

Figure 02_image001
[0038] 另外，在本說明書中，使用所謂「晶圓」的言辭時，有意思晶圓本身的情況，或意思晶圓及形成於其表面的預定的層或膜的層疊體的情況。在本說明書中使用所謂「晶圓的表面」的言辭時，有意思晶圓本身的表面的情況，或意思被形成於晶圓上的預定的層等的表面的情況。在本說明書中，記載成「在晶圓上形成預定的層」時，有意思在晶圓本身的表面上直接形成預定的層的情況，或在被形成於晶圓上的層等之上形成預定的層的情況。在本說明書中使用「基板」的言辭時，也與使用「晶圓」的言辭時同義。 　　[0039] (搬入步驟：S1) 　　一旦複數片的晶圓200被裝填(晶圓裝上)於晶舟217，則遮板219s會藉由遮板開閉機構115s來使移動，集合管209的下端開口會被開放(遮板開啟)。然後，如圖1所示般，支撐複數片的晶圓200的晶舟217是藉由晶舟昇降機115來舉起而朝處理室201內搬入(晶舟裝載)。在此狀態下，密封蓋219是成為經由O型環220b來密封集合管209的下端的狀態。 　　[0040] (壓力･溫度調整步驟：S2) 　　以處理室201的內部，亦即存在晶圓200的空間成為所望的壓力(真空度)之方式，藉由真空泵246來真空排氣(減壓排氣)。此時，處理室201內的壓力是以壓力感測器245所測定，根據此被測定的壓力資訊來反餽控制APC閥244。又，以處理室201內的晶圓200成為所望的溫度之方式藉由加熱器207來加熱。此時，以處理室201內成為所望的溫度分布之方式，根據溫度感測器263所檢測出的溫度資訊來反餽控制往加熱器207的通電情況。接著，開始藉由旋轉機構267之晶舟217及晶圓200的旋轉。處理室201內的排氣、晶圓200的加熱及旋轉皆是至少到對於晶圓200的處理終了為止的期間繼續進行。 　　[0041] (成膜步驟：S3，S4，S5，S6) 　　然後，藉由依序實行步驟S3，S4，S5，S6來進行成膜步驟。 　　[0042] (原料氣體供給步驟：S3，S4) 　　在步驟S3中，對於處理室201內的晶圓200供給作為原料氣體的DCS氣體。 　　[0043] 開啟閥243a，朝氣體供給管232a內流動DCS氣體。DCS氣體是藉由MFC 241a來進行流量調整，經由噴嘴249a從氣體供給孔250a來朝處理室201內供給，從排氣管231排氣。此時亦可同時開啟閥243c，朝氣體供給管232c內流動N2 氣體。此時被供給的N2 氣體是藉由MFC 241c來進行流量調整，與DCS氣體一起朝處理室201內供給，從排氣管231排氣。 　　[0044] 又，為了抑制DCS氣體朝噴嘴249b內侵入，亦可開啟閥243d，朝氣體供給管232d內流動N2 氣體。此時從噴嘴249b供給的N2 氣體是經由氣體供給管232b、噴嘴249b來朝處理室201內供給，從排氣管231排氣。 　　[0045] 以MFC 241a來控制的DCS氣體的供給流量是例如1sccm以上，5000sccm以下，較理想是10sccm以上，2000sccm以下的範圍內的流量。以MFC 241c，241d來控制的N2 氣體的供給流量是分別設為例如100sccm以上，10000sccm以下的範圍內的流量。處理室201內的壓力是設為例如1Pa以上，2666Pa以下，較理想是67Pa以上，1333Pa的範圍內的壓力。DCS氣體的供給時間是設為例如1秒以上，100秒以下，較理想是1秒以上，50秒以下的範圍內的時間。加熱器207的溫度是被設定成晶圓200的溫度會成為300℃以上600℃以下的範圍內的溫度之類的溫度。 　　[0046] 在上述的條件下對於晶圓200供給DCS氣體，藉此在晶圓200(表面的底層膜)上形成有含Cl的含Si層。含Cl的含Si層是亦可為Si層，或亦可為DCS的吸附層，或亦可為包含該等的雙方。以下，亦將含Cl的含Si層簡稱為含Si層。 　　[0047] 所謂Si層是除了藉由Si所構成的連續性的層以外，亦包含不連續的層或該等重疊而形成的Si薄膜之總稱。構成Si層的Si是亦包含與Cl的結合未完全被切斷者，或與H的結合未完全被切斷者。 　　[0048] DCS的吸附層是除了以DCS分子所構成的連續性的吸附層以外，亦包含不連續的吸附層。構成DCS的吸附層的DCS分子是亦包含Si與Cl的結合為一部分被切斷者，或Si與H的結合為一部分被切斷者，Cl與H的結合為一部分被切斷者等。亦即，DCS的吸附層是亦可為DCS的物理吸附層，或亦可為DCS的化學吸附層，或亦可為包含該等的雙方。 　　[0049] 形成含Si層之後，關閉閥243a，停止朝處理室201內供給DCS氣體。此時，將APC閥244保持開啟，藉由真空泵246來將處理室201內真空排氣，從處理室201內排除殘留於處理室201內之未反應或貢獻含Si層的形成之後的DCS氣體或反應副生成物等(S4)。並且，閥243c，243d是保持開啟，維持朝處理室201內供給N2 氣體。N2 氣體是作為淨化氣體作用。另外，亦可省略此步驟S4。 　　[0050] 原料氣體是除了DCS氣體以外，可適用一氯矽烷氣體，三氯矽烷氣體，四氯矽烷氣體，六氯乙矽烷氣體，八氯三矽烷氣體等的無機系鹵矽烷原料氣體等。除此以外，原料氣體是可適用四二甲基氨基矽烷氣體，三二甲基氨基矽烷氣體，雙二甲基氨基矽烷氣體，雙硬脂基丁基氨基矽烷，雙二乙基氨基矽烷氣體，二甲基氨基矽烷氣體，二乙基氨基矽烷氣體，二丙基氨基矽烷氣體，二異丙基氨基矽烷氣體，丁基氨基矽烷氣體，六甲基二矽氮烷氣體等的各種氨基矽烷原料氣體，或甲矽烷氣體，乙矽烷氣體，丙矽烷氣體等的鹵基非含有的無機系矽烷原料氣體。 　　[0051] 惰性氣體是除了N2 氣體以外，可使用Ar氣體、He氣體、Ne氣體、Xe氣體等的稀有氣體。 　　[0052] (反應氣體供給步驟：S5，S6) 　　成膜處理終了後，對於處理室201內晶圓200供給作為反應氣體之使電漿激發的NH3 氣體(S5)。 　　[0053] 在此步驟中，以和步驟S3的閥243a，243c，243d的開閉控制同樣的程序來進行閥243b~243d的開閉控制。NH3 氣體是藉由MFC 241b來進行流量調整，經由噴嘴249b來朝緩衝室237內供給。此時，在棒狀電極269，270間供給高頻電力。朝緩衝室237內供給的NH3 氣體是被激發成電漿狀態，作為活性種(NH3 *)朝處理室201內供給，從排氣管231排氣。另外，亦將被激發成電漿狀態的NH3 氣體稱為氮電漿。 　　[0054] 以MFC 241b來控制的NH3 氣體的供給流量是設為例如100sccm以上，10000sccm以下的範圍內的流量。施加於棒狀電極269，270的高頻電力是設為例如50W以上，1000W以下的範圍內的電力。處理室201內的壓力是例如設為1Pa以上，100Pa以下的範圍內的壓力。藉由使用電漿，即使將處理室201內的壓力設為如此比較低的壓力帶，也可使NH3 氣體活化。對於晶圓200供給藉由電漿激發NH3 氣體而取得的活性種之時間，亦即氣體供給時間(照射時間)是設為例如1秒以上，120秒以下，較理想是1秒以上，60秒以下的範圍內的時間。其他的處理條件是設為與上述的S3同樣的處理條件。 　　[0055] 在上述的條件下對於晶圓200供給NH3 氣體，藉此形成於晶圓200上的含Si層會被電漿氮化。此時，藉由被電漿激發的NH3 氣體的能量，含Si層所具有的Si-Cl結合、Si-H結合會被切斷。被切離與Si的結合之Cl、H是從含Si層脱離。然後，在Cl、H等脱離下，形成具有懸浮鍵(dangling bond)的含Si層中的Si會與NH3 氣體中所含的N結合，形成Si-N結合。藉由此反應進行，含Si層是被變化(被改質)成含Si及N的層，亦即矽氮化層(SiN層)。 　　[0056] 使含Si層變化成SiN層之後，關閉閥243b，停止NH3 氣體的供給。並且，停止朝棒狀電極269，270間之高頻電力的供給。然後，藉由與步驟S4同樣的處理程序、處理條件來將殘留於處理室201內的NH3 氣體或反應副生成物從處理室201內排除(S6)。另外，亦可省略此步驟S6。 　　[0057] 氮化劑，亦即，作為使電漿激發的含N氣體是除了NH3 氣體以外，可使用二亞胺(N2 H2 )氣體、聯氨(N2 H4 )氣體、N3 H8 氣體等的氮化氫系氣體，或含該等的化合物的氣體，或氮(N2 )氣體等。 　　[0058] 惰性氣體是除了N2 氣體以外，例如可使用在步驟S4所例示的各種稀有氣體。 　　[0059] (預定次數實施：S7) 　　以使上述的S3，S4，S5，S6按照此順序非同時亦即不同步進行作為1循環，藉由預定次數(n次)亦即1次以上進行此循環(S7)，可在晶圓200上形成預定組成及預定膜厚的SiN膜。上述的循環是重複複數次為理想。亦即，將每1循環形成的SiN層的厚度形成比所望的膜厚更小，至藉由層疊SiN層所形成的SiN膜的膜厚形成所望的膜厚為止，重複複數次上述的循環為理想。 　　[0060] (大氣壓恢復步驟：S8) 　　一旦上述的成膜處理完了，則從氣體供給管232c，232d的各者供給作為惰性氣體的N2 氣體至處理室201內，由排氣管231排氣。藉此，處理室201內會以惰性氣體來淨化，殘留於處理室201內的氣體或反應副生成物等會從處理室201內被除去(惰性氣體淨化)。然後，處理室201內的環境會被置換成惰性氣體(惰性氣體置換)，處理室201內的壓力會被恢復成常壓(S8)。 　　[0061] (搬出步驟：S9) 　　然後，密封蓋219會藉由晶舟昇降機115而下降，集合管209的下端會被開口，且處理完了的晶圓200會在被支撐於晶舟217的狀態下從集合管209的下端搬出至反應管203的外部(晶舟卸載)(S9)。晶舟卸載之後，遮板219s會被移動，集合管209的下端開口會隔著O型環220c來藉由遮板219s而密封(遮板關閉)。處理完了的晶圓200是被搬出至反應管203的外部之後，從晶舟217取出(晶圓卸下)。另外，晶圓卸下之後，亦可朝處理室201內搬入空的晶舟217。 　　[0062] 在以上的成膜工程(步驟S3~步驟S7)中，為了提高晶圓面內膜厚分布均一性，在處理氣體的供給中，晶舟217是藉由旋轉機構267來以預定的旋轉速度旋轉。亦即，藉由使晶圓200旋轉，從被形成於緩衝構造300的壁面的氣體供給孔250c或被形成於噴嘴249a的氣體供給孔250a噴出的氣體是形成在周方向均等地接觸於晶圓200的狀態，因此可使晶圓面內膜厚分布均一性(面內膜厚均一性)提升。 　　[0063] 其次，以下說明有關為了在上述的基板處理工程中使晶圓面內膜厚分布均一性提升，而控制晶舟217的旋轉速度之方法。 　　[0064] ＜比較例＞ 　　在圖5顯示將旋轉速度控制成一定的情況的膜厚分布之一例，作為後述的實施例的比較對象例。在圖5中，左側的膜厚為厚，從右到右下成為薄的分布。亦即，若使晶舟217以一定的旋轉速度旋轉，則晶圓面內膜厚分布均一性會變差。於是，在本實施形態的基板處理工程中，如以下的實施例1~實施例3所示般，以使晶舟217的旋轉速度變化的方式控制。在此，切換旋轉速度的時機是以下詳述的領域的境界位於氣體供給部的氣體供給孔的前面時。 　　[0065] ＜實施例1＞ 　　在本實施例中，藉由使從使用的處理氣體的氣體種類或氣體流量、處理溫度等的參數所算出之形成於晶圓上的薄膜的成膜分布傾向預先記憶於記憶裝置121c或外部記憶裝置123來記錄，根據該記錄的資訊，在薄膜被形成厚的領域及被形成薄的領域變更旋轉速度，藉此使晶圓面內均一性提升。 　　[0066] 以下，利用圖6(A)及圖6(B)來說明有關使令晶舟217旋轉的速度在1旋轉內變化的例子，該晶舟217是使用具有圖5所示的情況的晶圓的成膜傾向的製程的情況。 　　[0067] 如圖6(A)所示般，在具有3根的保持柱217a~ 217c的晶舟217中，以中央的保持柱217a之隔著晶圓200的中心而對向之成為晶圓200的外緣的位置(在本實施例中是晶圓缺口(notch)位置)作為旋轉的起始點的基準(0度)，根據圖5及圖6(A)所示的旋轉速度為一定的情況的晶圓的成膜傾向，設定使晶舟217的旋轉速度變化的角度位置(旋轉角)，及其角度位置的旋轉速度。具體而言，例如，將晶舟217的每1旋轉的時間預先設定成43秒。以此每1旋轉的時間(43秒)作為基準，將左側的膜厚容易變厚的領域的0度~160度(領域A)的旋轉速度r1設定成1.9rpm，將膜厚比左側薄的右上側的領域的160度~260度(領域B)的旋轉速度r2設定成1.4rpm，將右下側的膜厚容易變薄的領域的260度~360度(領域C)的旋轉速度r3設定成1.0rpm。 　　[0068] 亦即，預先設定每1旋轉的時間之後，根據旋轉速度為一定的情況的晶圓的成膜傾向，在氣體供給中的氣體供給孔250a，250c通過膜厚容易變厚的領域時加速晶舟217的旋轉速度。藉此，減少被供給至表示每單位時間移動於旋轉方向的距離之每單位旋轉移動距離的晶圓200表面的氣體供給量(朝晶圓200表面的氣體到達量或氣體照射時間)。並且，在氣體供給中的氣體供給孔250a，250c通過膜厚容易變薄的領域時放慢晶舟217的旋轉速度。藉此，增多每單位旋轉移動距離的氣體供給量。 　　[0069] 在如此藉由控制部121來控制旋轉機構267之下，可縮短朝晶圓200表面的膜厚容易變厚的預定領域的氣體接觸時間(氣體供給時間)，拉長朝膜厚容易變薄的預定領域的氣體接觸時間，可減少(或增多)在該領域中氣體所接觸的量(曝露量)。因此，如圖6(B)所示般可使被形成於晶圓上的膜的面內膜厚均一性提升。 　　[0070] 在此，各領域的旋轉速度是被設定成例如以下般為理想。亦即，相對於基準的旋轉速度，以成為比1倍大，10倍以下的速度範圍作為高速，且以0.1倍以上，未滿1倍的速度範圍作為低速，使記憶於記憶裝置121c或外部記憶裝置123，適當控制旋轉速度為理想。假設將高速域的旋轉速度控制成為相較於基準的旋轉速度，比10倍更大時，施加於晶圓200的離心力會變過大，不僅有可能在被載置於晶舟217的晶圓200產生偏差，或晶圓200從晶舟217飛出，而且會因為旋轉振動所造成晶圓200載置面與晶舟載置部的摩擦而容易產生粒子。又，將低速域的旋轉速度控制成為相較於基準的旋轉速度，比0.1倍更小時，旋轉速度會過慢，處理能力變小。 　　[0071] 另外，在供給的處理氣體流動於晶圓上的過程，自己分解率變化時，亦即，在剛處理室內供給之後是自己分解的量少，在晶圓200的下游側自己分解的量變多之類的環境下(氣體種類、成膜溫度)供給氣體時，亦可控制旋轉機構267，而使當氣體供給中的氣體供給孔通過膜厚容易變薄的領域的180度相反側時設定成為放慢晶舟的旋轉速度，藉此在使晶圓200表面的膜厚容易變薄的領域位於氣流的下游之狀態下，被供給至晶圓200表面的氣體供給量會變多，當氣體供給中的氣體供給孔通過膜厚容易變厚的領域的180度相反側時設定成為加速晶舟的旋轉速度，藉此在使膜厚容易變厚的領域位於氣流的下游之狀態下，被供給至晶圓200表面的氣體供給量會變少，而控制成為均一地形成晶圓的膜厚。 　　[0072] 並且，較理想是控制器121在變更晶舟217的旋轉速度時是不使晶舟217的旋轉停止，控制成為連續進行。藉由連續進行旋轉速度的變更，可抑制晶舟217與晶圓200的摩擦，降低粒子的發生。而且，防止晶圓200從保持溝217d偏離或落下。 　　[0073] 並且，在上述的內容中，將晶舟217的旋轉的起始點之基準位置，亦即旋轉角度0度的位置設為中央的保持柱217a之隔著晶圓200的中心而對向的晶圓200的外緣的位置來定位，但不限於此，亦可以保持柱217b、217c之隔著晶圓200的中心而對向的晶圓200的外緣的位置作為基準位置，或亦可以保持柱217a~217c的至少其中任何一個的晶圓200保持位置作為基準位置。又，如本實施例般在垂直多段地保持晶圓200時，亦可取代晶圓200的中心，將旋轉機構267的旋轉軸255視為中心，藉此決定基準位置。 　　[0074] 而且，旋轉的起始點之基準位置是不限於相對於保持柱217a~217c的位置而定，亦可由預先記憶的膜厚分布的傾向來先行決定使旋轉速度變更的領域，將該領域的任意的境界設定成旋轉的基準位置。 　　[0075] 然後，利用圖4所示的基板處理工程，控制器121會以上述的旋轉速度及角度位置作為參數來控制旋轉機構267，以預先被設定的每1旋轉的時間，使晶舟217的旋轉速度在1旋轉內變化，藉此可調整圓周方向的膜厚分布，如圖6(B)所示般，形成同心圓狀的分布而均一性提升，將處理時間形成一定而可使處理能力提升。 　　[0076] 在此，例如將步驟S3之供給DCS氣體至晶圓200的時間設為5秒，將步驟S4之供給淨化氣體至晶圓200的時間設為10秒，將步驟S5之供給NH3 氣體至晶圓200的時間設為20秒，將步驟S6之供給淨化氣體至晶圓200的時間設為10秒，以氣體的供給週期T成為45秒的方式設定各個的處理氣體供給時間。 　　[0077] 在上述的實施例中，晶圓的1旋轉週期：P=43sec，氣體供給週期：T=45sec，因此氣體供給週期要比晶圓1旋轉所要的時間更長2sec，所以晶圓的旋轉位置與氣體供給噴嘴的相對位置會至相當的循環為止不同步，因此面內膜厚均一性相較於晶圓的旋轉位置與氣體供給噴嘴的相對位置為同步的情況，可使更提升。若晶圓的旋轉位置與氣體供給噴嘴的相對位置同步，則會再度於同樣之處供給氣體，在該每次氣體供給時位於氣流的上游之晶圓領域所被形成的膜會變厚。因此，原本使晶圓旋轉時應形成同心圓狀的分布而均一性提升，在晶圓的旋轉週期與氣體供給週期為同步時無法取得其效果。 　　[0078] 因此，本實施例是以符合以下的數學式(1)的方式微調旋轉週期P及氣體供給週期T。 　　|mP-nT| ＞≠0 (n、m為自然數) (1) 　　(＞≠0是表示真地比0大的情形，||是表示絕對值。) 　　只要符合此式(1)，便可防止例如氣體供給循環中的同樣的氣體的供給開始時機與晶圓的旋轉位置同步，可改善均一性。 　　[0079] 另外，若針對應符合此式(1)的時間來考慮，則當然只要在成膜時間內全符合便足夠，但條件稍微弱亦可，例如只要相當10循環時間(若使用上面的記號，則至10T(sec)為止)不同步，便可想像氣體吹出的時機是被充分分散而均一性是無問題。 　　[0080] 亦即，可在預先被設定的每1旋轉的時間內，任意地指定薄膜厚領域及除此以外的領域的晶舟的旋轉速度與角度位置，使晶圓的旋轉週期與氣體供給週期會相當時間不同步，可使晶圓面內膜厚分布均一性提升。並且，可按照氣體供給循環數(要求膜厚)來使晶舟的旋轉速度變化。 　　[0081] ＜實施例2＞ 　　在本實施例中，根據以保持晶圓200的保持柱217a~ 217c作為基準的範圍來使令晶舟217旋轉的旋轉速度在1旋轉內變化。亦即，根據保持柱217a~217c的位置與間隔來使令晶舟217旋轉的旋轉速度在1旋轉內變化。這若晶舟217以一定速度旋轉，則晶舟217的保持柱217a~217c會形成噴出的氣體的流動的遮蔽物，因此晶圓面內膜厚分布均一性會在保持柱217a~217c周邊變差。 　　[0082] 於是，在本實施例中，控制器121會以旋轉速度及角度位置作為參數來控制旋轉機構267，不變更預先被設定的每1旋轉的時間，按照以供給氣體的氣體供給孔250a、250c的位置與保持柱217a~217c作為基準的範圍內的角度位置來使令晶舟217旋轉的速度在1旋轉內變化，藉此成為防止晶圓面內膜厚分布均一性在保持柱217a~217c周邊變差的現象者。 　　[0083] 亦即，控制器121會控制旋轉機構267來控制晶舟217的旋轉速度，而使氣體供給時的氣體供給孔250a、250c通過以保持柱217a~217c作為基準例如±15度的範圍內時的晶舟217的旋轉速度相較於通過範圍外時的晶舟217的旋轉速度，成為低速。 　　[0084] 例如，在如圖7所示般具有3根的保持柱217a~ 217c的晶舟217中，以和中央的保持柱217a對向的位置(在本實施例中是晶圓缺口位置)作為基準(0度)，設定使晶舟217的旋轉速度變化的角度位置，及其角度位置的旋轉速度。具體而言，例如，將晶舟217的每1旋轉的時間預先設定成62秒。以此每1旋轉的時間作為基準，將離保持柱217c±15度的75度~105度，165度~195度，255度~285度的旋轉速度r4設定成0.4rpm，將無保持柱217c的領域，即保持柱217c的間隔寬的0度~75度及285度~360度的旋轉速度r5設定成3.0rpm，將無保持柱217c的領域，即保持柱217c的間隔窄的105度~165度，195度~255度的旋轉速度r6設定成1.3rpm。 　　[0085] 然後，利用圖4所示的基板處理工程，控制器121會以上述的旋轉速度及角度位置作為參數來控制旋轉機構267，以預先被設定的每1旋轉的時間，使晶舟217的旋轉速度在1旋轉內變化，藉此可調整圓周方向的膜厚分布，形成同心圓狀的分布而均一性提升，將處理時間形成一定而可使處理能力提升。 　　[0086] 又，與上述的實施例1同樣，例如將步驟S3之供給DCS氣體至晶圓200的時間設為5秒，將步驟S4之供給淨化氣體至晶圓200的時間設為10秒，將步驟S5之供給NH3 氣體至晶圓200的時間設為20秒，將步驟S6之供給淨化氣體至晶圓200的時間設為10秒，將氣體的供給週期T設為45秒。如此設定氣體供給時間時，在本實施例中，晶圓的1旋轉週期：P=62sec，氣體供給週期：T=45sec，因此氣體供給週期要比晶圓1旋轉所要的時間更短17sec，所以晶圓的旋轉位置與氣體供給噴嘴的相對位置會至相當的循環為止不同步，成為提升面內膜厚均一性者。 　　[0087] 亦即，在保持柱217c通過氣體供給孔250a，250c的周邊時，藉由將晶舟217的旋轉速度形成低速，可使保持柱217a~217c周邊的氣體供給量增加，防止晶圓面內膜厚均一性在保持柱217a~217c周邊變差的現象，使晶圓面內膜厚均一性提升。另外，也有依據供給的氣體種類，在保持柱217a~217c通過氣體供給孔250a，250c的周邊時，將晶舟217的旋轉速度形成高速，在通過除此以外的領域時設定成為低速的情況。另外，各領域的旋轉速度是藉由實施例1記載的設定方法來設定為理想。 　　[0088] ＜實施例3＞ 　　在本實施例中，以每處理氣體的供給活動，亦即每氣體供給工程使令晶舟217旋轉的旋轉速度變化之方式控制旋轉機構267。 　　[0089] 在本實施例中，控制器121會以氣體的供給時間及旋轉機構267的角度位置作為參數來控制每氣體供給工程的旋轉速度，按照氣體供給工程來使令晶舟217旋轉的速度變化，藉此使晶圓面內膜厚分布均一性提升。 　　[0090] 具體而言，如圖8所示般，例如，將在步驟S3的供給DCS氣體時的晶舟旋轉速度設為12rpm，將在步驟S4，S6的供給淨化氣體時的晶舟旋轉速度分別設為6rpm，將在步驟S5的供給NH3 氣體時的晶舟旋轉速度設為3rpm。並且，將在步驟S3的供給DCS氣體至晶圓200的時間設為5秒，將在步驟S4的供給淨化氣體至晶圓200的時間設為10秒，將在步驟S5的供給NH3 氣體至晶圓200的時間設為20秒，將在步驟S6的供給淨化氣體至晶圓200的時間設為10秒，且將氣體的供給週期T設為45秒。 　　[0091] 藉由如此控制旋轉速度，晶舟217一旋轉所必要的時間會成為與供給各氣體的時間同樣，晶舟217一旋轉的期間中，同樣的氣體會持續被供給。藉此，不用擔心保持柱217a~217c的影響，可在晶圓200上均一地形成預定的膜。 　　[0092] 亦即，若根據本實施例，則藉由按照氣體供給工程來使令晶舟217旋轉的速度變化，即使在小循環數的工程或供給時間短的工程中也可使晶圓面內膜厚分布均一性提升。 　　[0093] 另外，在上述實施形態中，說明有關供給DCS氣體與NH3 氣體來形成SiN膜的例子，但本發明是不限於如此的形態，可針對至少利用2個的氣體種類來成膜的構成加以適用。 　　[0094] 又，在上述實施形態中，說明有關每一旋轉至少2次使晶舟的旋轉速度變化的例子，但本發明並非限於如此的形態，可針對至少1次使變化的構成加以適用。 　　[0095] 又，在上述實施形態中，說明有關使用晶圓缺口位置作為決定使晶舟217的旋轉速度變化的角度位置之基準的例子，但本發明是不限於此，可針對以被保持於保持柱217a~217c的其中任一個的晶圓200的載置位置作為基準設定的構成加以適用。 　　[0096] 又，在上述實施形態中，說明有關在反應氣體供給工程中，使反應氣體電漿化來供給至處理室內的例子，但本發明是不限於如此的形態，有關熱處理等的不利用電漿的構成也可適用。 　　[0097] 又，在上述實施形態中，說明有關在供給原料氣體之後供給反應氣體的例子，但本發明是不限於如此的形態，原料氣體、反應氣體的供給順序亦可相反。亦即，亦可在供給反應氣體之後供給原料氣體。藉由改變供給順序，可使被形成的膜的膜質或組成比變化。 　　[0098] 又，在上述實施形態中，說明有關在晶圓200上形成SiN膜的例子。本發明是不限於如此的形態，在晶圓200上形成矽氧化膜(SiO膜)、矽氧碳化膜(SiOC膜)、矽氧碳氮化膜(SiOCN膜)、矽氧氮化膜(SiON膜)等的Si系氧化膜的情況，或在晶圓200上形成矽碳氮化膜(SiCN膜)、矽硼氮化膜(SiBN膜)、矽硼碳氮化膜(SiBCN膜)、硼碳氮化膜(BCN膜)等的Si系氮化膜的情況也可適用。該等的情況，作為反應氣體是除了含O氣體以外，還可C3 H6 等的含C氣體，或NH3 等的含N氣體，或BCl3 等的含B氣體。 　　[0099] 又，本發明是在晶圓200上形成含鈦(Ti)、鋯(Zr)、鉿(Hf)、鉭(Ta)、鈮(Nb)、鋁(Al)、鉬(Mo)、鎢(W)等的金屬元素的氧化膜或氮化膜，亦即金屬系氧化膜或金屬系氮化膜的情況也可適用。亦即，本發明是在晶圓200上形成TiN膜、TiO膜、TiOC膜、TiOCN膜、TiON膜、TiBN膜、TiBCN膜等的金屬系薄膜的情況也可適用。 　　[0100] 該等的情況，例如，可使用四(二甲基氨基)鈦氣體，四(乙基甲基氨基)鉿氣體，四(乙基甲基氨基)鋯氣體，三甲基鋁氣體，四氯化鈦氣體，四氯化鉿氣體等，作為原料氣體。反應氣體是可使用上述的反應氣體。 　　[0101] 亦即，本發明是可適用在含半金屬元素的半金屬系膜或含金屬元素的金屬系膜的情況。該等的成膜處理的處理程序、處理條件是可設為與上述的實施形態或變形例所示的成膜處理同樣的處理程序、處理條件。在該等的情況中也可取得與上述的實施形態或變形例同樣的效果。 　　[0102] 被使用在成膜處理的處方是按照處理內容來個別準備，經由電氣通訊線路或外部記憶裝置123來儲存於記憶裝置121c內為理想。然後，開始各種處理時，CPU121a從被儲存於記憶裝置121c內的複數的處方之中按照處理內容來適當選擇恰當的處方為理想。藉此，可在1台的基板處理裝置泛用性且再現性佳地形成各種的膜種、組成比、膜質、膜厚的薄膜。並且，可減低操作員的負擔，可一面迴避操作錯誤，一面迅速地開始各種處理。 　　[0103] 上述的處方是不限於新作成的情形，例如，亦可藉由變更已被安裝於基板處理裝置的既存的處方來準備。變更處方的情況是亦可將變更後的處方經由電氣通訊線路或記錄該處方的記錄媒體來安裝於基板處理裝置。並且，亦可操作既存的基板處理裝置所準備的輸出入裝置122，直接變更已被安裝於基板處理裝置的既存的處方。 　　[0104] 以上，說明本發明的各種的典型的實施形態及實施例，但本發明是不限於該等的實施形態及實施例(包含數值)，亦可適當組合使用。[0009] Hereinafter, referring to FIGS. 1 to 5, an embodiment of the present invention will be described. [0010] (1) Configuration of substrate processing device (heating device) As shown in FIG. 1, the processing furnace 202 is provided with a heater 207 as a heating device (heating mechanism). The heater 207 has a cylindrical shape, and is vertically installed by being supported on a heater base (not shown) as a holding plate. The heater 207 also has a function as an activation mechanism (excitation unit) that activates (excites) the gas with heat. [Processing chamber] Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of, for example, quartz (SiO 2 ) Or silicon carbide (SiC) and other heat-resistant materials, forming a cylindrical shape with the upper end closed and the lower end open. Below the reaction tube 203, a manifold (Inlet flange) 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of metal such as stainless steel (SUS), and has a cylindrical shape whose upper and lower ends are open. The upper end of the collecting tube 209 is engaged with the lower end of the reaction tube 203 and is configured to support the reaction tube 203. An O-ring 220a as a sealing member is provided between the collecting tube 209 and the reaction tube 203. The collecting tube 209 is supported on the heater base, and the reaction tube 203 is vertically installed. The processing container (reaction container) is mainly composed of the reaction tube 203 and the collection tube 209. A processing chamber 201 is formed in the hollow portion of the processing container. The processing chamber 201 is a wafer 200 configured to accommodate a plurality of substrates. In addition, the processing container is not limited to the above-mentioned configuration, and the reaction tube 203 may only be referred to as a processing container. [0012] In the processing chamber 201, the nozzles 249a, 249b are provided to penetrate the side wall of the collecting pipe 209. The nozzles 249a and 249b are connected to the gas supply pipes 232a and 232b, respectively. In this manner, the reaction tube 203 is provided with two nozzles 249a, 249b and two gas supply tubes 232a, 232b, and a plurality of kinds of gases can be supplied into the processing chamber 201. In addition, when the collection tube 209 is not provided and the reaction tube 203 is used as the processing container, the nozzles 249a and 249b may be provided to penetrate the side wall of the reaction tube 203. [0013] The gas supply pipes 232a, 232b are provided with a mass flow controller (MFC) 241a, 241b of a flow controller (flow control section) and valves 243a, 243b of an on-off valve in order from the upstream side, respectively. On the downstream side of the valves 243a, 243b of the gas supply pipes 232a, 232b, gas supply pipes 232c, 232d for supplying inert gas are connected, respectively. The gas supply pipes 232c and 232d are provided with MFCs 241c and 241d and valves 243c and 243d in this order from the upstream side. [0014] The nozzle 249a is a circular annular space between the inner wall of the reaction tube 203 and the wafer 200 as shown in FIG. The wafers 200 are arranged to stand up in the stacking direction. That is, the nozzle 249a is a field that horizontally surrounds the wafer arrangement area on the side of the wafer arrangement area where the wafer 200 is arranged, and is provided along the wafer arrangement area. That is, the nozzle 249a is provided perpendicular to the surface (flat surface) of the wafer 200 on the side of the end (peripheral portion, edge portion) of each wafer 200 carried into the processing chamber 201. A gas supply hole 250a for supplying gas is provided on the side of the nozzle 249a. The gas supply hole 250a opens toward the center of the reaction tube 203, and can supply gas toward the wafer 200. A plurality of gas supply holes 250a are provided from the lower part to the upper part of the reaction tube 203. [0015] The nozzle 249b is provided in the buffer chamber 237 of the gas dispersion space. As shown in FIG. 2, the buffer chamber 237 is an annular space between the inner wall of the reaction tube 203 and the wafer 200 in plan view, and extends from the lower part to the upper part of the inner wall of the reaction tube 203. According to the stacking direction of the wafer 200. That is, the buffer chamber 237 is a field that horizontally surrounds the wafer arrangement area on the side of the wafer arrangement area, and is formed by the buffer structure (buffer portion) 300 along the wafer arrangement area. The buffer structure 300 is made of an insulator such as quartz, and the arc-shaped wall surface on which the buffer structure 300 is formed is provided with a gas supply hole 250c for supplying gas or an active species described later. The gas supply hole 250c opens toward the center of the reaction tube 203, and can supply gas toward the wafer 200. A plurality of gas supply holes 250c are provided from the lower part to the upper part of the reaction tube 203. [0016] The nozzle 249b is at the end opposite to the end of the buffer chamber 237 where the gas supply hole 250c is provided, and rises from the lower edge to the upper portion of the inner wall of the reaction tube 203 toward the stacking direction of the wafer 200 Setting. That is, the nozzle 249b is inside the buffer structure 300, that is, the side of the wafer arrangement area where the wafer 200 is arranged horizontally surrounds the wafer arrangement area, and is provided along the wafer arrangement area. That is, the nozzle 249b is provided perpendicular to the surface of the wafer 200 on the side of the end of the wafer 200 carried into the processing chamber 201. A gas supply hole 250b for supplying gas is provided on the side of the nozzle 249b. The gas supply hole 250b opens toward the center of the buffer chamber 237. Similar to the gas supply hole 250c, the gas supply holes 250b are provided in plural from the lower part to the upper part of the reaction tube 203. [0017] The gas supply pipe 232a is a raw material containing a predetermined element. For example, a silane raw material gas containing silicon (Si) as a predetermined element is supplied into the processing chamber 201 through the MFC 241a, the valve 243a, and the nozzle 249a. [0018] The silane raw material gas is, for example, a raw material gas containing Si and a halogen element, that is, a halogen silane raw material gas. The so-called halogenated silane raw material is a silane raw material having a halogen group. The halogenosilane raw material gas is, for example, a raw material gas containing Si and Cl, that is, a chlorosilane raw material gas. The chlorosilane raw material gas is, for example, dichlorosilane (SiH) 2 Cl 2 ; Abbreviated: DCS) gas. [0019] The gas supply pipe 232b is a reactant (reactant) with a chemical structure different from that of the raw material, for example, a nitrogen (N)-containing gas (nitriding agent, nitriding gas) will come through the MFC 241b, valve 243b, nozzle 249b It is supplied into the processing chamber 201. The nitriding agent is, for example, ammonia (NH 3 )gas. Use NH 3 When the gas is used as a nitriding agent, for example, a plasma source described later is used to plasma-excite the gas, and it is supplied as a plasma excitation gas. [0020] From the gas supply pipe 232c, 232d is an inert gas, such as nitrogen (N 2 ) The gas is supplied into the processing chamber 201 via the MFC 241c, 241d, the valves 243c, 243d, the gas supply pipes 232a, 232b, and the nozzles 249a, 249b. [0021] The raw material supply system as the first gas supply system is mainly constituted by the gas supply pipe 232a, the MFC 241a, and the valve 243a. The reactant supply system (reagent supply system) as the second gas supply system is mainly constituted by the gas supply pipe 232b, the MFC 241b, and the valve 243b. The inert gas supply system is mainly constituted by gas supply pipes 232c, 232d, MFC 241c, 241d, and valves 243c, 243d. The raw material supply system, the reactant supply system, and the inert gas supply system are also simply referred to as a gas supply system (gas supply unit). It is also conceivable to include the nozzle 249a in the raw material supply system and the nozzle 249b in the reactant supply system, or to include the nozzle 249a and 249b in the inert gas supply system. [0022] (Plasma Generation Section) In the buffer chamber 237, as shown in FIG. 2, two rod-shaped electrodes 269, 270 made of a conductor and having an elongated structure go from the lower part of the reaction tube 203 to The upper part is arranged along the alignment direction of the wafer 200. Each of the rod-shaped electrodes 269 and 270 is provided parallel to the nozzle 249b. Each of the rod electrodes 269, 270 is covered by the electrode protection tube 275 from the upper part to the lower part, thereby being protected. One of the rod-shaped electrodes 269 and 270 is connected to the high-frequency power supply 273 via the matching unit 272, and the other is a ground wire connected to the reference potential. High-frequency (RF) power is applied from the high-frequency power source 273 between the rod electrodes 269, 270, thereby generating plasma in the plasma generating area 224 between the rod electrodes 269, 270. The plasma source as a plasma generator (plasma generating part) is mainly constituted by the rod electrodes 269, 270 and the electrode protection tube 275. It can also be considered that the plasma source includes a matching device 272 and a high-frequency power supply 273. The plasma source is a function of plasma excitation gas, that is, a plasma excitation part (activation mechanism) that excites (activates) the plasma state as described later. [0023] The electrode protection tube 275 is configured to be insertable into the buffer chamber 237 in a state where each of the rod-shaped electrodes 269 and 270 is isolated from the environment in the buffer chamber 237. Fill N inside the electrode protection tube 275 2 Inert gas such as gas, or use an inert gas purification mechanism to use N 2 Inert gas such as gas purifies the inside of the electrode protection tube 275, thereby making the inside of the electrode protection tube 275 oxygen (O 2 ) The concentration is reduced to prevent the oxidation of the rod electrodes 269,270. [Exhaust Unit] The reaction tube 203 is provided with an exhaust tube 231 that exhausts the environment in the processing chamber 201. The exhaust pipe 231 is via a pressure sensor 245 as a pressure detector (pressure detection unit) that detects the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator (pressure adjustment unit) A vacuum pump 246 as a vacuum exhaust device is connected. The APC valve 244 is configured to open and close the valve while the vacuum pump 246 is actuated, whereby the vacuum exhaust and the vacuum exhaust in the processing chamber 201 can be stopped, and the vacuum pump 246 is actuated according to the pressure The pressure information detected by the sensor 245 adjusts the valve opening degree, whereby the pressure in the processing chamber 201 can be adjusted. The exhaust system is mainly composed of an exhaust pipe 231, an APC valve 244, and a pressure sensor 245. It is also conceivable to include a vacuum pump 246 in the exhaust system. The exhaust pipe 231 is not limited to the case provided in the reaction pipe 203, and may be provided in the collecting pipe 209 in the same manner as the nozzles 249a and 249b. [0025] Below the collecting pipe 209 is provided a sealing cover 219 as a furnace mouth cover body that can hermetically close the lower end opening of the collecting pipe 209. The sealing cover 219 is made of metal such as SUS, and is formed into a disc shape. On the upper surface of the sealing cap 219, an O-ring 220b as a sealing member that is in contact with the lower end of the manifold 209 is provided. A rotating mechanism 267 for rotating a boat 217 described below is provided on the side of the sealing cover 219 opposite to the processing chamber 201. The rotating shaft 255 of the rotating mechanism 267 is connected to the wafer boat 217 through the sealing cover 219. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer boat 217. The sealing cap 219 is configured to be raised and lowered in the vertical direction by a boat lift 115 as a lifting mechanism that is vertically provided outside the reaction tube 203. The wafer boat elevator 115 is configured to be able to carry the wafer boat 217 into and out of the processing chamber 201 by raising and lowering the sealing cover 219. The wafer boat elevator 115 is a transfer device (transport mechanism) configured to transfer the wafer boat 217, that is, the wafer 200, to the inside and outside of the processing chamber 201. In addition, under the collecting pipe 209, a shutter serving as a furnace mouth cover can be provided to airtightly close the lower end opening of the collecting pipe 209 while the sealing lid 219 is lowered by the boat elevator 115. 219s. The shutter 219s is made of, for example, metal such as SUS, and is formed into a disc shape. On the upper surface of the shutter 219s, an O-ring 220c as a sealing member that is in contact with the lower end of the manifold 209 is provided. The opening and closing operation of the shutter 219s (elevating operation, turning operation, etc.) is controlled by the shutter opening and closing mechanism 115s. (Substrate Support) As shown in FIG. 1, the wafer boat 217 as a substrate support is provided with a pair of upper and lower end plates (the upper end plate is also referred to as a top plate, and the lower end plate is referred to as Bottom plate), and a plurality of (three in this embodiment) holding columns (crystal boat columns) 217a to 217c (not shown in FIG. 1) that are erected vertically between the end plates. In this embodiment, each of the holding columns 217a to 217c is formed in the same shape. The holding columns 217a and 217b and the holding columns 217a and 217c are spaced at 90 degrees along the circumferential direction of the wafer 200. The holding columns 217b and the holding columns 217c are arranged at 180-degree intervals along the circumferential direction of the wafer 200. That is, the distance between the holding post 217a and the holding post 217b and the holding post 217a and the holding post 217c is arranged to be narrower than the distance between the holding post 217b and the holding post 217c. In each of the holding columns 217a to 217c, a plurality of holding grooves 217d (not shown in FIG. 1) are arranged at equal intervals in the longitudinal direction and face each other at the same height, thereby being formed so that the crystal can be formed in the same plane The circle 200 is kept horizontal. [0027] Then, the peripheral portion of the wafer 200 is inserted between the plurality of holding grooves 217d of each holding post 217a to 217c, thereby placing one or a plurality of wafers 200 such as 25 to 200 wafers in a horizontal posture And in a state where the centers of each other coincide, they are arranged in a vertical direction and supported in multiple stages. That is, the arrangement is arranged at predetermined intervals. The boat 217 is made of heat-resistant material such as quartz or SiC. In the lower part of the boat 217, a heat shield 218 made of a heat-resistant material such as quartz or SiC is supported in multiple stages. As shown in FIG. 2, inside the reaction tube 203 is a temperature sensor 263 as a temperature detector. According to the temperature information detected by the temperature sensor 263, the energization to the heater 207 is adjusted, whereby the temperature in the processing chamber 201 becomes the desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203 like the nozzles 249a and 249b. (Control Device) As shown in FIG. 3, the controller 121 of the control unit (control device) is configured to include a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a memory device 121c, and I/O. Computer at 121d O port. The RAM 121b, the memory device 121c, and the I/O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e. The controller 121 is connected to an input/output device 122 configured as, for example, a touch panel. [0030] The memory device 121c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. The memory device 121c readablely stores a control program for controlling the operation of the substrate processing device, or a process recipe in which a program and conditions for substrate processing described later are described. The recipe of the process is combined so that each program of substrate processing described later is executed on the controller 121, and a predetermined result can be obtained as a program function. In the following, the general term of process prescription or control program is also referred to as program. In addition, the process prescription is also referred to as prescription. When using the term "program" in this manual, there may be only a prescription unit, a control unit, or both parties. The RAM 121b is a memory area (working area) configured to temporarily hold programs or data read by the CPU 121a. [0031] The I/O port 121d is connected to the above-mentioned MFC 241a to 241d, valves 243a to 243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, matcher 272 , High frequency power supply 273, rotating mechanism 267, crystal boat elevator 115, shutter opening and closing mechanism 115s, etc. [0032] The CPU 121a is configured to read out the control program from the memory device 121c and execute it, and read the prescription from the memory device 121c in accordance with the input of an operation command from the input/output device 122 or the like. The CPU 121a is configured to control the rotation mechanism 267, control the flow adjustment operations of various gases of the MFCs 241a to 241d, the opening and closing operations of the valves 243a to 243d, and the opening and closing operations of the APC valve 244 in accordance with the contents of the read prescription. The pressure adjustment operation of the APC valve 244 of the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 of the temperature sensor 263, and the forward and reverse rotation and rotation of the crystal boat 217 of the rotating mechanism 267 The adjustment operation of the angle and the rotation speed, the raising and lowering operation of the boat 217 of the boat elevator 115, the operation of applying a high frequency toward the rod electrodes 269, 270 of the high-frequency power source 273, etc. [0033] The controller 121 can be stored in an external memory device (for example, a hard disk such as a hard disk, a CD such as a CD, an MO such as an optical disk, or a USB memory such as a semiconductor memory) 123 described above The program is installed on the computer to constitute. The memory device 121c or the external memory device 123 is a computer-readable recording medium. Hereinafter, these generic terms are also referred to simply as recording media. When using the term "recording medium" in this specification, the memory device 121c alone may be included, the external memory device 123 alone may be included, or both of them may be included. In addition, the program for the computer can be provided without using the external memory device 123, by using communication means such as the Internet or a dedicated line. [0034] (2) Substrate processing process Next, referring to FIG. 4, a process of forming a thin film on a wafer 200 using a substrate processing device will be described as a process of manufacturing a semiconductor device. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121. [0035] This is a description of the procedure for supplying DCS gas as a raw material gas and supplying (exciting plasma) NH 3 The step of using the gas as a reaction gas is not simultaneous, that is, it is performed synchronously a predetermined number of times (at least once), thereby forming a silicon nitride film (SiN film) on the wafer 200 as an example of a film containing Si and N. Also, for example, a predetermined film may be formed on the wafer 200 in advance. Furthermore, a predetermined pattern may be formed in advance on the wafer 200 or a predetermined film. [0036] In this specification, for convenience, there is also a process flow of the film forming process shown in FIG. 4 as shown below. [0037]
Figure 02_image001
[0038] In addition, in this specification, when the term "wafer" is used, it may mean a wafer itself, or a laminate of a wafer and a predetermined layer or film formed on the surface thereof. When the term "surface of the wafer" is used in this specification, it may mean the surface of the wafer itself, or the surface of a predetermined layer or the like formed on the wafer. In this specification, when it is described as "forming a predetermined layer on a wafer", it is interesting to form a predetermined layer directly on the surface of the wafer itself, or to form a predetermined layer on a layer formed on the wafer, etc. The situation of the layer. When the term "substrate" is used in this specification, it is synonymous with the term "wafer". [Carry-in step: S1] Once a plurality of wafers 200 are loaded (wafer mounted) on the wafer boat 217, the shutter 219s will be moved by the shutter opening and closing mechanism 115s, and the lower end of the manifold 209 The opening will be opened (shutter open). Then, as shown in FIG. 1, the wafer boat 217 supporting a plurality of wafers 200 is lifted by the wafer boat elevator 115 and carried into the processing chamber 201 (boat loading). In this state, the sealing cap 219 is in a state where the lower end of the manifold 209 is sealed via the O-ring 220b. [Pressure/Temperature Adjustment Step: S2] The vacuum pump 246 is used to evacuate (decompression discharge) in such a manner that the inside of the processing chamber 201, that is, the space where the wafer 200 exists becomes the desired pressure (vacuum degree) gas). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled based on the measured pressure information. In addition, the heater 207 heats the wafer 200 in the processing chamber 201 so that the desired temperature is reached. At this time, in accordance with the temperature information detected by the temperature sensor 263, the energization to the heater 207 is feedback-controlled in such a manner that the temperature distribution in the processing chamber 201 becomes a desired temperature distribution. Next, the rotation of the wafer boat 217 and the wafer 200 by the rotation mechanism 267 is started. The exhaust in the processing chamber 201 and the heating and rotation of the wafer 200 are continued at least until the processing of the wafer 200 ends. [0041] (Film forming steps: S3, S4, S5, S6) Then, the film forming steps are performed by sequentially performing steps S3, S4, S5, and S6. [0042] (Source gas supply steps: S3, S4) In step S3, DCS gas as a source gas is supplied to the wafer 200 in the processing chamber 201. [0043] The valve 243a is opened, and DCS gas flows into the gas supply pipe 232a. The DCS gas is adjusted in flow rate by the MFC 241a, is supplied into the processing chamber 201 from the gas supply hole 250a through the nozzle 249a, and is exhausted from the exhaust pipe 231. At this time, the valve 243c can also be opened at the same time to flow N into the gas supply pipe 232c 2 gas. N supplied at this time 2 The flow rate of the gas is adjusted by the MFC 241c, is supplied into the processing chamber 201 together with the DCS gas, and is exhausted from the exhaust pipe 231. [0044] In addition, in order to suppress the intrusion of DCS gas into the nozzle 249b, the valve 243d may be opened to flow N into the gas supply pipe 232d 2 gas. N supplied from the nozzle 249b at this time 2 The gas is supplied into the processing chamber 201 via the gas supply pipe 232b and the nozzle 249b, and is exhausted from the exhaust pipe 231. [0045] The supply flow rate of the DCS gas controlled by the MFC 241a is, for example, 1 sccm or more and 5000 sccm or less, more preferably 10 sccm or more and 2000 sccm or less. N controlled by MFC 241c, 241d 2 The gas supply flow rate is, for example, a flow rate in the range of 100 sccm or more and 10000 sccm or less. The pressure in the processing chamber 201 is set to, for example, 1 Pa or more and 2666 Pa or less, preferably 67 Pa or more and 1333 Pa. The supply time of the DCS gas is, for example, a time within a range of 1 second or more and 100 seconds or less, and more preferably 1 second or more and 50 seconds or less. The temperature of the heater 207 is set such that the temperature of the wafer 200 becomes a temperature within a range of 300°C or more and 600°C or less. [0046] A DC-containing gas is supplied to the wafer 200 under the above-described conditions, whereby a Si-containing layer containing Cl is formed on the wafer 200 (underlayer film on the surface). The Si-containing layer containing Cl may also be a Si layer, or may be an adsorption layer of DCS, or may include both of them. Hereinafter, the Si-containing layer containing Cl is also simply referred to as the Si-containing layer. [0047] The Si layer is a general term for a Si thin film formed by including a discontinuous layer or these overlaps in addition to a continuous layer composed of Si. The Si constituting the Si layer also includes those whose bonding with Cl is not completely cut or whose bonding with H is not completely cut. [0048] The DCS adsorption layer is not only a continuous adsorption layer composed of DCS molecules, but also a discontinuous adsorption layer. The DCS molecules constituting the adsorption layer of the DCS also include those in which the combination of Si and Cl is partially broken, or the combination of Si and H is partially broken, the combination of Cl and H is partially broken, and the like. That is, the adsorption layer of DCS may be a physical adsorption layer of DCS, or may be a chemical adsorption layer of DCS, or may include both of them. [0049] After the Si-containing layer is formed, the valve 243a is closed to stop the supply of DCS gas into the processing chamber 201. At this time, the APC valve 244 is kept open, and the vacuum pump 246 is used to evacuate the processing chamber 201 to remove the unreacted DCS gas remaining in the processing chamber 201 or forming Si-containing layers from the processing chamber 201. Or reaction by-products (S4). In addition, the valves 243c and 243d are kept open to maintain the supply of N into the processing chamber 201 2 gas. N 2 The gas acts as a purge gas. In addition, this step S4 may be omitted. [0050] The raw material gas is an inorganic halide silane raw material gas such as monochlorosilane gas, trichlorosilane gas, tetrachlorosilane gas, hexachlorodisilane gas, octachlorotrisilane gas, etc. other than DCS gas. In addition, the raw material gas is applicable to tetradimethylaminosilane gas, tridimethylaminosilane gas, bisdimethylaminosilane gas, bisstearyl butylaminosilane, bisdiethylaminosilane gas, Various aminosilane raw material gases such as dimethylaminosilane gas, diethylaminosilane gas, dipropylaminosilane gas, diisopropylaminosilane gas, butylaminosilane gas, hexamethyldisilazane gas, etc. , Or inorganic silane raw material gas not containing halogen groups such as silane gas, disilane gas, propanesilane gas, etc. [0051] The inert gas is in addition to N 2 In addition to the gas, rare gas such as Ar gas, He gas, Ne gas, Xe gas and the like can be used. [0052] (Reaction gas supply steps: S5, S6) After the film formation process is completed, the wafer 200 in the processing chamber 201 is supplied with NH as a reaction gas to excite the plasma 3 Gas (S5). [0053] In this step, the opening and closing control of the valves 243b to 243d is performed in the same procedure as the opening and closing control of the valves 243a, 243c, and 243d in step S3. NH 3 The gas is adjusted in flow rate by the MFC 241b, and is supplied into the buffer chamber 237 through the nozzle 249b. At this time, high-frequency power is supplied between the rod electrodes 269 and 270. NH supplied into the buffer chamber 237 3 The gas is excited into a plasma state as an active species (NH 3 *) It is supplied into the processing chamber 201 and exhausted from the exhaust pipe 231. In addition, it will also be excited into plasma NH 3 The gas is called nitrogen plasma. [0054] NH controlled with MFC 241b 3 The gas supply flow rate is, for example, a flow rate in the range of 100 sccm or more and 10000 sccm or less. The high-frequency power applied to the rod electrodes 269 and 270 is, for example, power within a range of 50 W or more and 1000 W or less. The pressure in the processing chamber 201 is, for example, a pressure within a range of 1 Pa or more and 100 Pa or less. By using plasma, even if the pressure in the processing chamber 201 is set to such a relatively low pressure zone, NH 3 Gas activation. For wafer 200 supply, NH is excited by plasma 3 The time of the active species obtained by the gas, that is, the gas supply time (irradiation time) is, for example, a time within a range of 1 second or more and 120 seconds or less, and more preferably 1 second or more and 60 seconds or less. The other processing conditions are set to the same processing conditions as in S3 described above. [0055] NH is supplied to the wafer 200 under the above conditions 3 The gas, whereby the Si-containing layer formed on the wafer 200 will be nitrided by the plasma. At this time, with NH excited by plasma 3 The energy of the gas, the Si-Cl bond and the Si-H bond of the Si-containing layer are cut off. Cl and H that are cut off from the combination of Si are detached from the Si-containing layer. Then, under the detachment of Cl, H, etc., the Si in the Si-containing layer with dangling bond will interact with NH 3 The N contained in the gas bonds to form a Si-N bond. Through this reaction, the Si-containing layer is changed (modified) to a layer containing Si and N, that is, a silicon nitride layer (SiN layer). [0056] After changing the Si-containing layer to a SiN layer, the valve 243b is closed to stop the NH 3 Gas supply. Then, the supply of high-frequency power between the rod electrodes 269 and 270 is stopped. Then, by the same processing procedure and processing conditions as in step S4, the NH remaining in the processing chamber 201 3 Gas or reaction by-products are removed from the processing chamber 201 (S6). In addition, this step S6 may be omitted. [0057] The nitriding agent, that is, the N-containing gas that excites the plasma is in addition to NH 3 In addition to gas, diimine (N 2 H 2 ) Gas, hydrazine (N 2 H 4 ) Gas, N 3 H 8 Hydrogen nitride gas such as gas, or gas containing such compounds, or nitrogen (N 2 ) Gas, etc. [0058] The inert gas is in addition to N 2 In addition to the gas, for example, various rare gases exemplified in step S4 can be used. [Implementation at a predetermined number of times: S7] The above S3, S4, S5, and S6 are performed simultaneously in this order, i.e., asynchronously, as one cycle. This is performed by a predetermined number of times (n times), that is, more than one time. In the cycle (S7), a SiN film with a predetermined composition and a predetermined film thickness can be formed on the wafer 200. The above-mentioned cycle is ideal to repeat a plurality of times. That is, the thickness of the SiN layer formed per cycle is made smaller than the desired film thickness, and until the desired film thickness of the SiN film formed by laminating the SiN layers is formed, the above-mentioned cycle is repeated several times. ideal. [Atmospheric Pressure Recovery Step: S8] Once the above film formation process is completed, N as an inert gas is supplied from each of the gas supply pipes 232c, 232d 2 The gas enters the processing chamber 201 and is exhausted by the exhaust pipe 231. Thereby, the inside of the processing chamber 201 is purified with an inert gas, and the gas or reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (inert gas purification). Then, the environment in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (S8). [0061] (Export step: S9) Then, the sealing cover 219 will be lowered by the boat lift 115, the lower end of the collecting tube 209 will be opened, and the processed wafer 200 will be supported on the boat 217 The bottom is carried out from the lower end of the collecting tube 209 to the outside of the reaction tube 203 (boat unloading) (S9). After the wafer boat is unloaded, the shutter 219s will be moved, and the lower opening of the collecting tube 209 will be sealed by the shutter 219s via the O-ring 220c (shutter closed). After the processed wafer 200 is carried out to the outside of the reaction tube 203, it is taken out from the wafer boat 217 (wafer unloading). In addition, after the wafer is unloaded, an empty wafer boat 217 can also be carried into the processing chamber 201. [0062] In the above film forming process (step S3 to step S7), in order to improve the uniformity of the film thickness distribution within the wafer surface, in the supply of the processing gas, the wafer boat 217 is predetermined by the rotation mechanism 267 Rotation speed rotation. That is, by rotating the wafer 200, the gas ejected from the gas supply hole 250c formed in the wall surface of the buffer structure 300 or the gas supply hole 250a formed in the nozzle 249a is formed to evenly contact the wafer in the circumferential direction The state of 200 can improve the uniformity of the in-plane film thickness distribution (uniformity of the in-plane film thickness) of the wafer. [0063] Next, a method of controlling the rotation speed of the wafer boat 217 in order to improve the uniformity of the film thickness distribution in the wafer surface in the above substrate processing process will be described below. [Comparative Example] FIG. 5 shows an example of the film thickness distribution in the case where the rotation speed is controlled to be constant, as an example of a comparison object of the embodiment described later. In FIG. 5, the film thickness on the left side is thick, and becomes a thin distribution from right to bottom right. That is, if the wafer boat 217 is rotated at a constant rotation speed, the uniformity of the film thickness distribution within the wafer surface will deteriorate. Therefore, in the substrate processing process of this embodiment, as shown in the following Examples 1 to 3, the rotation speed of the wafer boat 217 is controlled to be changed. Here, the timing of switching the rotation speed is when the state of the field detailed below is in front of the gas supply hole of the gas supply unit. <Example 1> In this example, the film formation distribution tendency of the thin film formed on the wafer calculated from the parameters such as the gas type, gas flow rate, and processing temperature of the processing gas used is determined in advance It is recorded in the memory device 121c or the external memory device 123, and according to the recorded information, the rotation speed is changed in the area where the thin film is formed thick and the area where the thin film is formed, thereby improving the in-plane uniformity of the wafer. [0066] Hereinafter, an example of changing the speed of rotating the wafer boat 217 within 1 revolution will be described with reference to FIGS. 6(A) and 6(B). In the case of a wafer-prone process. As shown in FIG. 6(A), in a wafer boat 217 having three holding columns 217a to 217c, the center holding column 217a is opposed to the wafer through the center of the wafer 200. The position of the outer edge of 200 (in this embodiment, the wafer notch position) is used as the reference of the starting point of rotation (0 degrees), and the rotation speed is constant according to FIGS. 5 and 6(A) In the case of the film formation tendency of the wafer, the angular position (rotation angle) at which the rotational speed of the wafer boat 217 is changed and the rotational speed of the angular position thereof are set. Specifically, for example, the time per revolution of the crystal boat 217 is preset to 43 seconds. Using this time per rotation (43 seconds) as a reference, the rotation speed r1 of the area where the film thickness on the left side is easily thickened from 0 to 160 degrees (field A) is set to 1.9 rpm, and the film thickness is thinner than that on the left side. The rotation speed r2 of 160 degrees to 260 degrees in the upper right area (area B) is set to 1.4 rpm, and the rotation speed r3 of the area on the lower right side where the film thickness is easily thinned is 260 degrees to 360 degrees (area C) To 1.0 rpm. [0068] That is, when the rotation speed is constant after a predetermined time per rotation, the gas supply holes 250a and 250c in the gas supply pass through the area where the film thickness is likely to become thicker Speed up the rotation speed of crystal boat 217. As a result, the amount of gas supplied to the surface of the wafer 200 (the amount of gas reaching the surface of the wafer 200 or the gas irradiation time) supplied to the surface of the wafer 200 per unit rotation movement distance representing the distance moving in the rotation direction per unit time is reduced. In addition, when the gas supply holes 250a and 250c in the gas supply pass through an area where the film thickness is likely to be thinned, the rotation speed of the wafer boat 217 is slowed. This increases the amount of gas supplied per unit of rotation movement distance. [0069] By controlling the rotation mechanism 267 by the control unit 121 in this way, the gas contact time (gas supply time) in a predetermined area where the film thickness on the surface of the wafer 200 tends to be thickened can be shortened, and the film thickness can be easily elongated The gas contact time of the thinned predetermined area can reduce (or increase) the amount of gas contact (exposure amount) in the area. Therefore, as shown in FIG. 6(B), the in-plane film thickness uniformity of the film formed on the wafer can be improved. [0070] Here, the rotation speed in each field is preferably set to, for example, the following. That is, the speed range relative to the reference is higher than 1 times, 10 times or less as the high speed range, and 0.1 times or more and less than 1 times the speed range as the low speed, so that the memory device 121c or external The memory device 123 preferably controls the rotation speed appropriately. Assuming that the rotation speed of the high-speed domain is controlled to be more than 10 times the rotation speed of the reference, the centrifugal force applied to the wafer 200 becomes too large, and it is not only possible to place the wafer 200 on the wafer boat 217 A deviation may occur, or the wafer 200 may fly out of the boat 217, and particles may be easily generated due to friction between the mounting surface of the wafer 200 and the boat mounting portion due to rotational vibration. In addition, if the rotation speed in the low-speed range is controlled to be smaller than 0.1 times the rotation speed of the reference, the rotation speed will be too slow and the processing capacity will be reduced. [0071] In addition, when the supplied process gas flows on the wafer, when the self-decomposition rate changes, that is, the amount of self-decomposition after supplying in the processing chamber is small, and the self-decomposition on the downstream side of the wafer 200 When the gas is supplied in an environment such as an increased amount (gas type, film formation temperature), the rotation mechanism 267 can also be controlled so that when the gas supply hole in the gas supply passes through the 180-degree opposite side of the area where the film thickness is likely to be thinned It is set to slow down the rotation speed of the wafer boat, so that in the state where the film thickness on the surface of the wafer 200 is likely to be thinner is located downstream of the gas flow, the amount of gas supplied to the surface of the wafer 200 will increase. The gas supply hole in the gas supply is set to accelerate the rotation speed of the boat when it passes through the 180-degree opposite side of the area where the film thickness is likely to be thickened, whereby the area where the film thickness is easily thickened is located downstream of the gas flow. The amount of gas supplied to the surface of the wafer 200 is reduced, so that the thickness of the wafer is uniformly formed. [0072] Furthermore, it is preferable that the controller 121 does not stop the rotation of the boat 217 when changing the rotation speed of the boat 217, and the control is continuously performed. By continuously changing the rotation speed, the friction between the boat 217 and the wafer 200 can be suppressed, and the generation of particles can be reduced. Moreover, the wafer 200 is prevented from deviating or falling from the holding groove 217d. [0073] In the above, the reference position of the starting point of the rotation of the wafer boat 217, that is, the position of the rotation angle of 0 degrees is set to the center of the holding column 217a across the center of the wafer 200. The position of the outer edge of the wafer 200 facing the position, but not limited to this, the position of the outer edge of the wafer 200 facing the center of the wafer 200 between the columns 217b, 217c can also be used as a reference position, or The wafer 200 holding position of at least any one of the pillars 217a to 217c may be used as a reference position. In addition, when the wafer 200 is held vertically in multiple stages as in this embodiment, the center of the wafer 200 may be replaced, and the rotation axis 255 of the rotation mechanism 267 may be regarded as the center to determine the reference position. [0074] Furthermore, the reference position of the starting point of rotation is not limited to the position relative to the holding columns 217a to 217c, and the area where the rotation speed is changed may be determined in advance by the tendency of the film thickness distribution stored in advance. The arbitrary state of the field is set as the reference position for rotation. [0075] Then, using the substrate processing process shown in FIG. 4, the controller 121 controls the rotation mechanism 267 using the above-mentioned rotation speed and angular position as parameters, and causes the boat 217 to rotate at every predetermined rotation time The rotation speed of the film changes within 1 rotation, thereby adjusting the film thickness distribution in the circumferential direction. As shown in FIG. 6(B), a concentric distribution is formed and the uniformity is improved. power enhanced. [0076] Here, for example, the time for supplying DCS gas to wafer 200 in step S3 is set to 5 seconds, the time for supplying purge gas to wafer 200 in step S4 is set to 10 seconds, and the NH is supplied to step S5 3 The time from the gas to the wafer 200 is set to 20 seconds, the time from the supply of the purge gas in step S6 to the wafer 200 is set to 10 seconds, and each process gas supply time is set so that the gas supply period T becomes 45 seconds. [0077] In the above embodiment, the wafer 1 rotation period: P=43sec, gas supply period: T=45sec, so the gas supply period is 2sec longer than the time required for wafer 1 to rotate, so the wafer’s The rotation position and the relative position of the gas supply nozzle are not synchronized until a corresponding cycle. Therefore, the in-plane film thickness uniformity can be improved more than when the rotation position of the wafer and the relative position of the gas supply nozzle are synchronized. If the rotation position of the wafer is synchronized with the relative position of the gas supply nozzle, the gas is supplied again at the same place, and the film formed in the wafer area upstream of the gas flow becomes thicker every time the gas is supplied. Therefore, when the wafer is rotated, a concentric distribution should be formed to improve uniformity, and the effect cannot be obtained when the rotation period of the wafer is synchronized with the gas supply period. [0078] Therefore, in the present embodiment, the rotation period P and the gas supply period T are finely adjusted in a manner conforming to the following mathematical formula (1). |mP-nT| ＞≠0 (n, m are natural numbers) (1) (＞≠0 is a case where it is really greater than 0, || is an absolute value.) As long as this formula (1) is met, then For example, it is possible to prevent the start timing of the supply of the same gas in the gas supply cycle from being synchronized with the rotation position of the wafer, and it is possible to improve uniformity. [0079] In addition, if considering the time that should meet this formula (1), of course, it is sufficient as long as the film formation time is fully met, but the condition is slightly weaker, for example, as long as the equivalent of 10 cycle time (if using the above The symbol is not synchronized until 10T (sec), and it can be imagined that the timing of gas blowing is sufficiently dispersed and the uniformity is no problem. [0080] That is, the rotation speed and angular position of the wafer boat in the film thickness area and other areas can be arbitrarily specified within each preset rotation time, and the wafer rotation period and gas supply can be adjusted. The cycle will be quite out of synchronization, which can improve the uniformity of the film thickness distribution on the wafer surface. In addition, the rotation speed of the wafer boat can be changed according to the number of gas supply cycles (required film thickness). [0081] <Embodiment 2> In this embodiment, the rotation speed at which the wafer boat 217 rotates is changed within 1 rotation according to the range based on the holding columns 217a to 217c holding the wafer 200. That is, the rotation speed for rotating the crystal boat 217 is changed within 1 rotation according to the positions and intervals of the holding columns 217a to 217c. If the boat 217 rotates at a constant speed, the holding columns 217a to 217c of the boat 217 will form a shield for the flow of the ejected gas, so the uniformity of the film thickness distribution within the wafer surface will deteriorate around the holding columns 217a to 217c . [0082] Therefore, in this embodiment, the controller 121 controls the rotation mechanism 267 using the rotation speed and the angular position as parameters, without changing the preset time per rotation, according to the gas supply hole 250a for supplying gas , The position of 250c and the angular position within the range of the holding columns 217a to 217c as a reference to change the speed of rotating the boat 217 within 1 rotation, thereby preventing the uniformity of the film thickness distribution in the wafer surface on the holding column 217a ~217c The phenomenon of the surrounding deterioration. [0083] That is, the controller 121 controls the rotation mechanism 267 to control the rotation speed of the wafer boat 217, so that the gas supply holes 250a, 250c at the time of gas supply pass the holding columns 217a to 217c as a reference, for example, within a range of ±15 degrees The rotation speed of the crystal boat 217 when inward is lower than the rotation speed of the crystal boat 217 when it passes out of range. [0084] For example, in a wafer boat 217 having three holding posts 217a to 217c as shown in FIG. 7, the position facing the central holding post 217a (wafer notch position in this embodiment) As a reference (0 degrees), the angular position at which the rotational speed of the boat 217 is changed and the rotational speed of the angular position are set. Specifically, for example, the time per revolution of the crystal boat 217 is preset to 62 seconds. Based on the time per rotation, the rotation speed r4 of 75 degrees to 105 degrees, 165 degrees to 195 degrees, and 255 degrees to 285 degrees from the holding column 217c ± 15 degrees is set to 0.4 rpm, and the holding column 217c is not used. The rotation speed r5 of the range of 0 to 75 degrees and 285 degrees to 360 degrees with a wide interval of the holding columns 217c is set to 3.0 rpm, and the area without the holding column 217c, that is, the narrow interval of the holding columns 217c is 105 degrees. The rotation speed r6 of 165 degrees, 195 degrees to 255 degrees is set to 1.3 rpm. [0085] Then, using the substrate processing process shown in FIG. 4, the controller 121 controls the rotation mechanism 267 using the above-mentioned rotation speed and angular position as parameters, and causes the crystal boat 217 to rotate at every predetermined rotation time The speed of rotation changes within 1 rotation, whereby the thickness distribution in the circumferential direction can be adjusted to form a concentric distribution and uniformity is improved, and the processing time is formed to a certain degree to increase the processing capacity. [0086] In addition, as in the above-described first embodiment, for example, the time for supplying DCS gas to wafer 200 in step S3 is set to 5 seconds, and the time for supplying purge gas to wafer 200 in step S4 is set to 10 seconds. Supply NH of step S5 3 The time from the gas to the wafer 200 is set to 20 seconds, the time from the supply of the purge gas in step S6 to the wafer 200 is set to 10 seconds, and the gas supply period T is set to 45 seconds. When the gas supply time is set in this way, in this embodiment, the wafer 1 rotation period: P=62sec, and the gas supply period: T=45sec, so the gas supply period is 17sec shorter than the time required for the wafer 1 to rotate, so The rotation position of the wafer and the relative position of the gas supply nozzle are not synchronized until a considerable cycle, and it becomes the one that improves the uniformity of the in-plane film thickness. [0087] That is, when the holding column 217c passes around the gas supply holes 250a, 250c, by reducing the rotation speed of the boat 217 to a low speed, the amount of gas supply around the holding columns 217a to 217c can be increased to prevent the wafer The phenomenon that the uniformity of the in-plane film thickness deteriorates around the holding columns 217a to 217c improves the uniformity of the in-plane film thickness of the wafer. In addition, depending on the type of gas supplied, when the holding columns 217a to 217c pass around the gas supply holes 250a and 250c, the rotation speed of the wafer boat 217 is increased to a high speed, and it may be set to a low speed when passing through other areas. In addition, the rotation speed in each field is set ideally by the setting method described in Example 1. [0088] <Embodiment 3> In this embodiment, the rotation mechanism 267 is controlled in such a manner that the rotation speed for rotating the crystal boat 217 is changed per process gas supply activity, that is, per gas supply process. [0089] In this embodiment, the controller 121 uses the gas supply time and the angular position of the rotating mechanism 267 as parameters to control the rotation speed of each gas supply process, and rotates the speed of the crystal boat 217 according to the gas supply process Variation, thereby improving the uniformity of the film thickness distribution within the wafer surface. Specifically, as shown in FIG. 8, for example, the rotation speed of the boat when DCS gas is supplied in step S3 is set to 12 rpm, and the rotation speed of the boat when the purge gas is supplied in steps S4 and S6 is set. Set to 6 rpm respectively, and supply the NH in step S5 3 The rotation speed of the crystal boat at the time of gas was set to 3 rpm. Further, the time for supplying DCS gas to wafer 200 in step S3 is set to 5 seconds, the time for supplying purge gas to wafer 200 in step S4 is set to 10 seconds, and the supply of NH in step S5 3 The time from the gas to the wafer 200 is set to 20 seconds, the time from the supply of the purge gas in step S6 to the wafer 200 is set to 10 seconds, and the gas supply period T is set to 45 seconds. [0091] By controlling the rotation speed in this way, the time required for the crystal boat 217 to rotate becomes the same as the time for supplying each gas, and the same gas is continuously supplied during the period of the crystal boat 217 rotating. Thereby, without worrying about the influence of the holding columns 217a to 217c, a predetermined film can be uniformly formed on the wafer 200. [0092] That is, according to the present embodiment, by changing the speed at which the wafer boat 217 rotates according to the gas supply process, the wafer surface can be made even in a process with a small cycle number or a process with a short supply time The uniformity of the inner film thickness distribution is improved. [0093] In addition, in the above-described embodiment, the supply of DCS gas and NH 3 An example of forming a SiN film by gas, but the present invention is not limited to such a form, and can be applied to a structure in which a film is formed using at least two gas types. [0094] In addition, in the above embodiment, an example in which the rotation speed of the boat is changed at least twice per rotation is described, but the present invention is not limited to such a form, and can be applied to a configuration in which the change is made at least once. [0095] In addition, in the above embodiment, an example of using the wafer notch position as a reference for determining the angular position for changing the rotational speed of the boat 217 is described, but the present invention is not limited to this, and can be held to The mounting position of the wafer 200 of any one of the holding columns 217a to 217c is applied as a configuration set as a reference. [0096] Furthermore, in the above-mentioned embodiment, an example is described in which the reaction gas is plasma-supplied and supplied into the processing chamber in the reaction gas supply process, but the present invention is not limited to such a form, and does not utilize heat treatment etc. The configuration of plasma is also applicable. [0097] In addition, in the above embodiment, an example of supplying the reaction gas after supplying the raw material gas is described, but the present invention is not limited to such a form, and the supply order of the raw material gas and the reaction gas may be reversed. That is, the raw material gas may be supplied after the reaction gas is supplied. By changing the supply sequence, the film quality or composition ratio of the formed film can be changed. [0098] Furthermore, in the above embodiment, an example of forming a SiN film on the wafer 200 will be described. The present invention is not limited to such a form, a silicon oxide film (SiO film), a silicon oxycarbide film (SiOC film), a silicon oxycarbonitride film (SiOCN film), and a silicon oxynitride film (SiON) are formed on the wafer 200 In the case of an Si-based oxide film such as a film), or a silicon carbonitride film (SiCN film), silicon boron nitride film (SiBN film), silicon boron carbonitride film (SiBCN film), boron The case of a Si-based nitride film such as a carbon nitride film (BCN film) can also be applied. In such cases, as the reaction gas, in addition to O-containing gas, C 3 H 6 C-containing gas, or NH 3 N-containing gas, or BCl 3 B-containing gas. [0099] Further, the present invention is formed on the wafer 200 containing titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), An oxide film or a nitride film of a metal element such as tungsten (W), that is, a metal oxide film or a metal nitride film can also be applied. That is, the present invention is also applicable to the case where metal-based thin films such as TiN film, TiO film, TOC film, TiOCN film, TiON film, TiBN film, TiBCN film, etc. are formed on the wafer 200. [0100] In such cases, for example, tetrakis (dimethylamino) titanium gas, tetrakis (ethylmethylamino) hafnium gas, tetrakis (ethylmethylamino) zirconium gas, trimethyl aluminum gas, Titanium tetrachloride gas, hafnium tetrachloride gas, etc. are used as raw material gases. As the reaction gas, the above-mentioned reaction gas can be used. [0101] That is, the present invention is applicable to a semi-metallic element-containing semi-metallic film or a metal element-containing metal-based film. The processing program and processing conditions of such a film-forming process can be set to the same processing program and processing conditions as the film-forming process shown in the above embodiment or modification. In such cases, the same effect as the above-mentioned embodiment or modification can be obtained. [0102] The prescription used in the film forming process is prepared individually according to the processing content, and is preferably stored in the memory device 121c via an electrical communication line or an external memory device 123. Then, when various processes are started, the CPU 121a preferably selects an appropriate prescription according to the processing content from the plural prescriptions stored in the memory device 121c. With this, thin films of various film types, composition ratios, film qualities, and film thicknesses can be formed in one substrate processing apparatus with versatility and good reproducibility. Furthermore, the burden on the operator can be reduced, and various kinds of processing can be started quickly while avoiding operation errors. [0103] The above-mentioned prescription is not limited to a newly created case, and for example, it may be prepared by changing an existing prescription that has been mounted on the substrate processing apparatus. In the case of changing the prescription, the changed prescription may also be mounted on the substrate processing apparatus via an electrical communication line or a recording medium recording the prescription. In addition, the input/output device 122 prepared by the existing substrate processing apparatus may be operated to directly change the existing prescription already installed in the substrate processing apparatus. [0104] In the above, various typical embodiments and examples of the present invention have been described, but the present invention is not limited to these embodiments and examples (including numerical values), and may be used in appropriate combination.

[0105]121‧‧‧控制器(控制部)200‧‧‧晶圓(基板)201‧‧‧處理室207‧‧‧加熱器(加熱裝置)217‧‧‧晶舟(基板保持具)217a、217b、217c‧‧‧保持柱232a、232b、232c、232d‧‧‧氣體供給管237‧‧‧緩衝室249a、249b‧‧‧噴嘴250a、250b、250c‧‧‧氣體供給孔267‧‧‧旋轉機構300‧‧‧緩衝構造(緩衝部)[0105] 121‧‧‧ controller (control part) 200‧‧‧ wafer (substrate) 201‧‧‧ processing chamber 207‧‧‧ heater (heating device) 217‧‧‧ boat (substrate holder) 217a , 217b, 217c ‧‧‧ holding column 232a, 232b, 232c, 232d ‧‧‧ gas supply pipe 237‧‧‧ buffer chamber 249a, 249b ‧‧‧ nozzle 250a, 250b, 250c ‧‧‧ gas supply hole 267‧‧‧ Rotating mechanism 300‧‧‧ buffer structure (buffer part)

[0008] 　　圖1是在本發明的實施形態所被適用的基板處理裝置的縱型處理爐的概略構成圖，以縱剖面圖來表示處理爐部分的圖。 　　圖2是在本發明的實施形態所被適用的基板處理裝置的縱型處理爐的概略構成圖，以圖1的A-A線剖面圖來表示處理爐部分的圖。 　　圖3是在本發明的實施形態所被適用的基板處理裝置的控制器的概略構成圖，以方塊圖來表示控制器的控制系的圖。 　　圖4是表示本發明的基板處理製程的流程圖。 　　圖5是表示將被處理基板的旋轉速度設為一定來成膜時的膜厚分布的圖。 　　圖6(A)是表示將被處理基板的旋轉速度設為一定來成膜時的膜厚分布的圖，(B)是根據(A)的成膜傾向，在1旋轉內使被處理基板的旋轉速度變化而成膜時的膜厚分布的圖。 　　圖7是表示在1旋轉內使被處理基板的旋轉速度變化的其他的實施例的圖。 　　圖8是表示使被處理基板的旋轉速度變化的其他的實施例的圖。[0008] FIG. 1 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus to which an embodiment of the present invention is applied, and shows a portion of the processing furnace in a vertical cross-sectional view. FIG. 2 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus to which an embodiment of the present invention is applied, and shows a portion of the processing furnace as a cross-sectional view taken along line A-A in FIG. 1. FIG. 3 is a schematic configuration diagram of a controller of a substrate processing apparatus to which the embodiment of the present invention is applied, and a block diagram showing a control system of the controller. FIG. 4 is a flowchart showing the substrate processing process of the present invention. FIG. 5 is a diagram showing a film thickness distribution when a film is formed by setting the rotation speed of a substrate to be processed to be constant. 6(A) is a diagram showing the film thickness distribution when a film is formed by setting the rotation speed of the substrate to be fixed, (B) is based on the film formation tendency of (A), and the substrate is processed within 1 rotation A graph of the film thickness distribution when the rotation speed changes to form a film. FIG. 7 is a diagram showing another embodiment in which the rotation speed of the substrate to be processed is changed in one rotation. FIG. 8 is a diagram showing another example of changing the rotational speed of the substrate to be processed.

115‧‧‧晶舟昇降機 115‧‧‧crystal boat lift

115s‧‧‧遮板開閉機構 115s‧‧‧Shutter opening and closing mechanism

121‧‧‧控制器(控制部) 121‧‧‧Controller (Control Department)

200‧‧‧晶圓(基板) 200‧‧‧wafer (substrate)

201‧‧‧處理室 201‧‧‧ processing room

202‧‧‧處理爐 202‧‧‧Processing furnace

203‧‧‧反應管 203‧‧‧Reaction tube

207‧‧‧加熱器(加熱裝置) 207‧‧‧heater (heating device)

209‧‧‧集合管 209‧‧‧collection tube

217‧‧‧晶舟(基板保持具) 217‧‧‧crystal boat (substrate holder)

218‧‧‧隔熱板 218‧‧‧Insulation board

219‧‧‧密封蓋 219‧‧‧Seal cap

219s‧‧‧遮板 219s‧‧‧ Shutter

220a、220b、220c‧‧‧O型環 220a, 220b, 220c‧‧‧O-ring

231‧‧‧排氣管 231‧‧‧Exhaust pipe

232a、232b、232c、232d‧‧‧氣體供給管 232a, 232b, 232c, 232d ‧‧‧ gas supply pipe

237‧‧‧緩衝室 237‧‧‧ buffer room

241a、241b、241c、241d‧‧‧質量流控制器(MFC) 241a, 241b, 241c, 241d ‧‧‧ mass flow controller (MFC)

243a、243b、243c、243d‧‧‧閥 243a, 243b, 243c, 243d

244‧‧‧APC閥 244‧‧‧APC valve

245‧‧‧壓力感測器 245‧‧‧pressure sensor

246‧‧‧真空泵 246‧‧‧Vacuum pump

249a、249b‧‧‧噴嘴 249a, 249b ‧‧‧ nozzle

250a、250b、250c‧‧‧氣體供給孔 250a, 250b, 250c ‧‧‧ gas supply hole

255‧‧‧旋轉軸 255‧‧‧rotation axis

263‧‧‧溫度感測器 263‧‧‧Temperature sensor

267‧‧‧旋轉機構 267‧‧‧rotating mechanism

Claims (9)

一種基板處理裝置，其特徵係具有：處理室，其係處理基板；基板保持具，其係於前述處理室內保持前述基板；旋轉機構，其係使前述基板保持具旋轉；及控制部，其係控制前述旋轉機構來控制前述基板保持具的旋轉速度，前述控制部，係被構成為：不變更預先被設定的每1旋轉的時間，以前述基板保持具的旋轉速度會在1旋轉內變化的方式，且以在前述旋轉速度變化的時機，前述基板保持具不會停止的方式控制前述旋轉機構。 A substrate processing apparatus is characterized by a processing chamber which processes a substrate; a substrate holder which holds the substrate in the processing chamber; a rotation mechanism which rotates the substrate holder; and a control section which The rotation mechanism is controlled to control the rotation speed of the substrate holder. The control unit is configured such that the rotation speed of the substrate holder changes within one rotation without changing the preset time per rotation. Mode, and the rotation mechanism is controlled so that the substrate holder does not stop at the timing when the rotation speed changes. 如申請專利範圍第1項之基板處理裝置，其中，前述控制部，係使前述基板保持具旋轉複數次來處理基板。 According to the substrate processing apparatus of claim 1, the control section rotates the substrate holder a plurality of times to process the substrate. 如申請專利範圍第1項之基板處理裝置，其中，在前述處理室更具有供給複數的處理氣體之氣體供給部，前述基板保持具，係具備用以保持前述基板的複數的保持柱，前述控制部，係被構成為：控制前述旋轉機構，使依據來自前述複數的保持柱的至少其中任一個隔著前述基板的中心而對向的前述基板的外緣的位置之旋轉角度所規定的前述基板的領域之中，依據預定的範圍的旋轉角度所規 定的領域通過前述氣體供給部的供給口的前面時的前述旋轉速度之第1旋轉速度成為比依據前述預定的範圍的旋轉角度所規定的領域以外的領域通過前述供給口的前面時的旋轉速度之第2旋轉速度更低速。 A substrate processing apparatus according to item 1 of the patent application scope, wherein the processing chamber further includes a gas supply portion that supplies a plurality of processing gases, the substrate holder includes a plurality of holding columns for holding the substrate, and the control The unit is configured to control the rotation mechanism so that the substrate is defined by the rotation angle of the position of the outer edge of the substrate opposed to at least any one of the plurality of holding columns across the center of the substrate In the field of, according to the rotation angle of the predetermined range The first rotation speed of the rotation speed when a predetermined area passes in front of the supply port of the gas supply portion is higher than the rotation speed when the area other than the area defined by the rotation angle of the predetermined range passes in front of the supply port The second rotation speed is lower. 如申請專利範圍第3項之基板處理裝置，其中，前述控制部，係被構成為：以使前述第1旋轉速度成為前述第2旋轉速度的0.1倍以上且未滿1倍的方式控制前述旋轉機構。 A substrate processing apparatus according to claim 3, wherein the control unit is configured to control the rotation so that the first rotation speed is 0.1 times or more and less than 1 times the second rotation speed mechanism. 如申請專利範圍第3項之基板處理裝置，其中，前述控制部，係被構成為：以使前述第1旋轉速度成為比前述第2旋轉速度的1倍大且10倍以下的方式控制前述旋轉機構。 A substrate processing apparatus according to claim 3, wherein the control unit is configured to control the rotation so that the first rotation speed is greater than 1 times and less than 10 times the second rotation speed mechanism. 如申請專利範圍第3項之基板處理裝置，其中，前述控制部，係被構成為：以依據前述複數的處理氣體的種類來使前述第1旋轉速度及前述第2旋轉速度變化的方式控制前述旋轉機構及前述氣體供給部。 A substrate processing apparatus according to claim 3 of the patent application, wherein the control unit is configured to control the first rotation speed and the second rotation speed so as to vary according to the type of the plurality of processing gases The rotating mechanism and the aforementioned gas supply unit. 如申請專利範圍第1項之基板處理裝置，其中，前述基板保持具係被構成為使複數的基板取預定的間隔來配列。 As in the substrate processing apparatus of claim 1, the substrate holder is configured to arrange a plurality of substrates at a predetermined interval. 一種半導體裝置的製造方法，其特徵係具有：將保持基板的基板保持具搬入至處理室內之工程；一面對前述處理室內供給處理氣體，不變更預先被設定的每1旋轉的時間，使前述基板保持具的旋轉速度在1旋轉內變化，且一面在前述旋轉速度變化的時機，不使前述基板保持具停止下，進行預定的基板處理之工程；及從前述處理室搬出前述基板保持具之工程。 A method of manufacturing a semiconductor device, characterized by a process of carrying a substrate holder holding a substrate into a processing chamber; and supplying processing gas to the processing chamber without changing the time per rotation set in advance The rotation speed of the substrate holder changes within 1 rotation, and at the timing when the rotation speed changes, the predetermined substrate processing process is performed without stopping the substrate holder; and the substrate holder is carried out from the processing chamber engineering. 一種記錄媒體，係記錄了用以藉由電腦來使下列程序實行於前述基板處理裝置的程式之電腦可讀取的記錄媒體，將保持基板的基板保持具搬入至基板處理裝置的處理室內之程序；一面對前述處理室內供給處理氣體，不變更預先被設定的每1旋轉的時間，使前述基板保持具的旋轉速度在1旋轉內變化，且一面在前述旋轉速度變化的時機，不使前述基板保持具停止下，進行預定的基板處理之程序；及從前述處理室搬出前述基板保持具之程序。 A recording medium that records a computer-readable recording medium for executing the following program on the aforementioned substrate processing apparatus by a computer, and a procedure for carrying a substrate holder holding a substrate into the processing chamber of the substrate processing apparatus ; The face of the processing chamber is supplied with process gas, without changing the preset time per rotation, so that the rotation speed of the substrate holder changes within 1 rotation, and at the timing of the rotation speed change, while not changing the When the substrate holder is stopped, a predetermined substrate processing procedure is performed; and a procedure for carrying out the substrate holder from the processing chamber.
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