TWI679763B - Flexible electronic device - Google Patents

Abstract

A flexible electronic device includes a flexible substrate, a plurality of buffer layers, and a plurality of first wires. The flexible substrate has a bending region and an element region connected to the bending region, wherein the flexible substrate has a bending axis in the bending region. The buffer layer is separately provided on the flexible substrate. The first wires are respectively disposed on the corresponding buffer layers, and the first wires extend from the element area to the bending area in a first direction, wherein the angle between the first wire located in the bending area and the bending axis is θ1, and 1 ° ≦ θ1 ≦ 30 °.

Description

Flexible electronic device

The present invention relates to an electronic device, and more particularly, to a flexible electronic device.

As portable displays are widely used, the development of flexible displays is becoming more and more active in order to achieve the purpose of displaying under different curved surfaces. In addition, in order to meet aesthetic requirements, most display panels require a larger display area. Therefore, the technology of narrow bezels has been gradually valued. For example, a narrow bezel design can be achieved by bending external lines to the back of the display panel.

However, when the external circuit is bent to the back of the display panel, it is affected by the tensile stress generated during the bending, so that the wires are easily broken at the bend. For example, when the bent display panel has a bending radius of 0.25 mm, the problem of disconnection is likely to occur in the wires located at the bent portion.

The invention provides a flexible electronic device, which can improve the problem of disconnection at the place where the conductive wire is easily bent.

A flexible electronic device according to an embodiment of the present invention includes a flexible substrate, a plurality of buffer layers, and a plurality of first wires. The flexible substrate has a bending region and an element region connected to the bending region, wherein the flexible substrate has a bending axis in the bending region. The buffer layer is separately provided on the flexible substrate. The first wires are respectively disposed on the corresponding buffer layers, and the first wires extend from the element area to the bending area in a first direction, wherein the angle between the first wire located in the bending area and the bending axis is θ1, and 1 ° ≦ θ1 ≦ 30 °.

Based on the above, in the flexible electronic device of the above embodiment of the present invention, since the buffer layer is separately disposed on the flexible substrate, and the first wires are respectively disposed on the corresponding buffer layers, wherein The angle between a wire and the bending axis is θ1, and 1 ° ≦ θ1 ≦ 30 °. In this way, the tensile stress experienced by the first wire located in the bending area during bending can be significantly reduced, thereby improving the problem of broken wires where the wire is easily bent.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

100, 200‧‧‧ flexible electronic device

102, 202‧‧‧Bend area

104, 204‧‧‧component area

106‧‧‧External circuit area

S‧‧‧ flexible substrate

BA‧‧‧Bending axis

BL‧‧‧ buffer layer

M1‧‧‧first lead

M2‧‧‧Second Lead

D1‧‧‧ first direction

D2‧‧‧ Second direction

DC‧‧‧Drive circuit

ILD‧‧‧First insulation layer

OBP‧‧‧Second insulation layer

A, B‧‧‧ distance

θ1, θ2, θ3, θ4‧‧‧ included angles

R1, R2‧‧‧ area

FIG. 1A is a schematic top view of a flexible electronic device according to an embodiment of the invention.

Fig. 1B is a schematic cross-sectional view taken along line A-A 'of Fig. 1A.

FIG. 1C is an enlarged perspective view of a region R1 in FIG. 1A.

FIG. 1D is an enlarged perspective view of a region R2 in FIG. 1A.

FIG. 2 is a schematic top view of a flexible electronic device according to another embodiment of the present invention.

Hereinafter, the present invention will be explained more fully with reference to the drawings of this embodiment. However, the present invention may be embodied in various forms and should not be limited to the embodiments described herein. The thicknesses of layers and regions in the drawings are exaggerated for clarity. The same or similar reference numbers indicate the same or similar elements, and the following paragraphs will not repeat them one by one. In addition, the directional terms mentioned in the embodiments, such as: up, down, left, right, front, or rear, are only directions referring to the attached drawings. Therefore, the directional terms used are used to illustrate and not to limit the present invention.

FIG. 1A is a schematic top view of a flexible electronic device according to an embodiment of the invention. Fig. 1B is a schematic cross-sectional view taken along line A-A 'of Fig. 1A. FIG. 1C is an enlarged perspective view of a region R1 in FIG. 1A. FIG. 1D is an enlarged perspective view of a region R2 in FIG. 1A.

Referring to FIGS. 1A and 1B simultaneously, the flexible electronic device 100 may include a flexible substrate S, a plurality of buffer layers BL, and a plurality of first wires M1. In this embodiment, the flexible electronic device 100 is, for example, a flexible display, but the present invention is not limited thereto.

The flexible substrate S may have a bending region 102, a device region 104, and an external circuit region 106. The bending region 102 may be disposed between the device region 104 and the external circuit region 106, and the device region 104 and the bending region 102 may相 连接。 Phase connection. In this embodiment, the flexible substrate S may have a bending axis BA in the bending region 102, so that the bending axis BA can be used as a reference to bend the external circuit region 106 of the flexible substrate S to be flexible. The back of the flexible substrate S to achieve a narrow frame design. For example, for the flexible electronic device 100 after bending, the component region 104 and the external circuit region 106 overlap each other in a direction perpendicular to the flexible substrate S. The material of the flexible substrate S is, for example, polyimide (PI).

In this embodiment, the element area 104 may be a display area of the flexible electronic device 100. That is, the element region 104 may include a pixel array (not shown). In some embodiments, the pixel array may include multiple scan lines, multiple data lines, multiple pixel electrodes, and multiple active devices, wherein the scan lines, data lines, and pixel electrodes may be electrically connected to the active devices, respectively. . For example, the scan lines, data lines, and pixel electrodes can be electrically connected to the gate, source, and drain of the active device, respectively. In other embodiments, the pixel array may include a light emitting diode and an active element. The light emitting diode is, for example, an organic light emitting diode (OLED), a micro light emitting diode (μLED), or a combination thereof. The active device can be a thin film transistor (TFT), such as a bottom-gate transistor, a top-gate transistor, a three-dimensional transistor, or other suitable transistors. The gate of the bottom-gate transistor is located below the semiconductor layer, the gate of the top-gate transistor is located above the semiconductor layer, and the channel extension of the semiconductor layer of the three-dimensional transistor is not on a plane. The semiconductor layer can be a single-layer or multi-layer structure, and its material includes amorphous silicon, microcrystalline silicon, nanocrystalline silicon, polycrystalline silicon, single crystal silicon, organic semiconductor materials, oxide semiconductor materials, nano carbon tubes / rods, or other Suitable materials or combinations of the foregoing.

It should be noted that this embodiment is described by taking the circular contoured element region 104 as an example, but the present invention is not limited thereto. In other embodiments, the element region 104 may also be rectangular, triangular or any other shape according to the design.

In this embodiment, the buffer layer BL is detachably disposed on the flexible substrate S. In this way, the tensile stress to which the buffer layer BL located in the bending area is reduced can be reduced to improve the problem that the buffer layer BL is prone to cracks at the bend, thereby avoiding the wiring formed on the buffer layer BL (For example, the first conducting wire M1 or the second conducting wire M2 which will be mentioned later) The problem of disconnection occurs during bending. The material of the buffer layer BL may be an inorganic material, an organic material, or a combination thereof. For example, the inorganic material may be silicon oxide (SiO _x ), silicon nitride (SiN _x ), or a combination thereof; and the organic material may be polyimide (PI), polyamic acid (PAA) ), Polyamide (PA), polyvinyl alcohol (PVA), polyvinyl cinnamate (PVCi), other suitable photoresistive materials, or combinations thereof. The thickness of the buffer layer BL is, for example, 500 Å or more and 10,000 Å or less. In this embodiment, the buffer layer BL may be a composite material composed of SiO _x and SiN _x , but the present invention is not limited thereto. The method for forming the buffer layer BL is, for example, forming a buffer material layer (not shown) on the flexible substrate S, and then patterning the buffer material layer to form a separately provided buffer layer BL on the flexible substrate S. . In some embodiments, the buffer material layer may be patterned by lithography, but the present invention is not limited thereto.

In addition, in order to prevent water vapor or oxygen in the environment from entering the interior of the flexible electronic device 100, the components (for example, the active components mentioned above) disposed in the component area 104 are affected. In some embodiments, the buffer layer BL may be divided into two parts, for example, one part of the buffer layer BL is separately disposed on the bending region 102 of the flexible substrate S; and the other part of the buffer layer BL is the entire surface. Ground covered in flexible Above the element region 104 of the flexible substrate S, in this way, moisture or oxygen can be prevented from entering the element region 104 by the buffer layer BL having a good water blocking and oxygen performance. In the above embodiment, the buffer material layer disposed on the bending region 102 can be selectively patterned, so that the buffer layer BL is separated and disposed on the bending region 102 of the flexible substrate S, and The entire surface is covered on the element region 104 of the flexible substrate S.

In this embodiment, the first conductive lines M1 may be respectively disposed on the corresponding buffer layers BL, wherein the first conductive lines M1 extend from the element region 104 along the first direction D1 to the bending region 102 (as shown in FIG. 1A), The included angle between the first lead M1 and the bending axis BA in the bending area 102 is θ1, and 1 ° ≦ θ1 ≦ 30 °. In this way, the tensile stress experienced by the first wire M1 located in the bending area 102 during bending can be significantly reduced, so as to improve the problem of wire breakage where the wire is easy to bend, even after the bendable flexible electronics When the bending radius of the device 100 is less than 0.25 mm, the first wire M1 located in the bending area 102 is not prone to the problem of disconnection. That is, a narrower frame design can be achieved by further reducing the bending radius of the flexible electronic device 100.

In this embodiment, the elements in the element region 104 can be electrically connected to the driving circuit DC provided in the external circuit region 106 through the first wire M1. The material of the first wire M1 may be a conductive material, such as a metal, a metal oxide, a metal nitride, a metal oxynitride, or a combination thereof. For example, the material of the first wire M1 may be aluminum (Al), titanium (Ti), molybdenum (Mo), Ti / Al / Ti, or Mo / Al / Mo. The thickness of the first conductive wire M1 is, for example, 500 Å or more and 8000 Å or less. A method for forming the first conductive line M1 is, for example, a physical vapor deposition (PVD) method. In this embodiment, the first lead M1 is described by taking an oblique straight line as an example, but the present invention is not limited thereto. In other embodiments, The first conductive wire M1 may also be zigzag, mesh or a combination thereof, so as to improve the stress that the first conductive wire M1 can withstand, thereby improving the problem of disconnection where the conductive wire is easily bent.

In some embodiments, the angle θ1 between the first wire M1 and the bending axis BA in the bending area 102 may be greater than or equal to 2.9 ° and less than or equal to 26.6 ° (for example, the ratio of the distance A to the distance B shown in FIG. 1C is 2: 1) In this way, the tensile stress that the first wire M1 located in the bending area 102 undergoes during bending can be further reduced, and the flexible electronic device 100 can be provided with a miniaturized design.

In some embodiments, as shown in FIG. 1B or FIG. 1C, an included angle between the buffer layer BL and the bending axis BA in the bending region 102 is θ2, and θ2 is approximately equal to θ1. In other words, for the bending region 102, the buffer layer BL and the first conductive line M1 have a similar pattern. For example, for the bending region 102, the vertical projection of the buffer layer BL on the flexible substrate S is the same as the vertical projection of the first wire M1 on the flexible substrate S, or the buffer layer BL is on the flexible substrate S. The vertical projection on the flexible substrate S is magnified by 0 to 2 times the same as the vertical projection of the first wire M1 on the flexible substrate S. In this embodiment, the buffer material layer and the first wire material layer may be sequentially formed on the flexible substrate S, and then the first wire material layer and the lower wire material layer may be removed simultaneously by a patterning process. The buffer material layer is formed to form a first conductive wire M1 and a buffer layer BL which are similar in pattern and stacked on top of each other.

As shown in FIG. 1A, the flexible electronic device 100 may optionally include a plurality of second wires M2, wherein the second wires M2 may be respectively disposed on the corresponding first wires M1, and the second wires M2 are from the component area. 104 along the second direction D2 (second party D2 Extending to the bending area 102 in a direction different from the first direction D1), so that the components in the component area 104 can be electrically connected to the driving circuit DC in the external circuit area 106 through the first lead M1 and the second lead M2 respectively, Can achieve narrow border design. In some embodiments, the first conductive line M1 and the second conductive line M2 may be staggered with each other in the bending region 102. In other words, the first direction D1 and the second direction D2 may be staggered with each other. The material of the second wire M2 may be a conductive material, such as a metal, a metal oxide, a metal nitride, a metal oxynitride, or a combination thereof. For example, the material of the second wire M2 may be aluminum (Al), titanium (Ti), molybdenum (Mo), Ti / Al / Ti, or Mo / Al / Mo. The thickness of the second wire M2 is, for example, 500 Å or more and 8000 Å or less. A method for forming the second conductive wire M2 is, for example, a physical vapor deposition method.

As shown in FIG. 1A, the included angle between the second conductive wire M2 and the bending axis BA can be θ3, and 1 ° ≦ θ3 ≦ 30 °, so that the second conductive wire M2 located in the bending area 102 can be significantly reduced during bending. Tensile stress to improve the problem of wire breakage where the wire is easy to bend. Even if the bend radius of the flexible electronic device 100 after the bend is less than 0.25 mm, the second wire M1 located at the bend is not easy. Problems with disconnection.

In some embodiments, the angle θ3 between the second wire M2 and the bending axis BA in the bending area 102 may be greater than or equal to 2.9 ° and less than or equal to 26.6 ° (for example, the ratio of the distance A to the distance B shown in FIG. 1D is 2: 1) This can further reduce the tensile stress that the second wire M2 located in the bending area 102 undergoes during bending, and can also enable the flexible electronic device 100 to have a miniaturized design.

As shown in FIG. 1B, the flexible electronic device 100 may further include a plurality of first insulating layers ILD, wherein the first insulating layer ILD may be respectively disposed between the first conductive line M1 and the second conductive line M2 to avoid the first conductive line M1 and the second wire M2 are mutually connected to cause a short circuit. The material of the first insulating layer ILD may be an inorganic material, such as silicon oxide, silicon nitride, or a combination thereof. The thickness of the first insulating layer ILD is, for example, 500 Å or more and 10,000 Å or less. In this embodiment, the buffer layer BL may be a composite material composed of SiO _x and SiN _x , but the present invention is not limited thereto.

In some embodiments, as shown in FIG. 1D, an included angle between the first insulation layer ILD and the bending axis 102 may be θ4, and θ4 is approximately equal to θ3. In other words, for the bending region 102, the first insulating layer ILD and the second wire M2 may have a similar pattern. For example, for the bending region 102, the vertical projection of the first insulating layer ILD on the flexible substrate S is the same as the vertical projection of the second wire M2 on the flexible substrate S, or the first insulating layer The vertical projection of the ILD on the flexible substrate S is magnified by 0 to 2 times the vertical projection of the second wire M2 on the flexible substrate S. In other embodiments, as shown in FIG. 1C, the first insulating layer ILD and the first wire M1 may have a similar pattern. For example, for the bending region 102, the vertical projection of the first insulating layer ILD on the flexible substrate S is the same as the vertical projection of the first wire M1 on the flexible substrate S. In other embodiments, as shown in FIG. 1B, for the bending region 102, the vertical projection of the first insulating layer ILD on the flexible substrate S is the same as the flexibility of the first conductive wire M1 and the second conductive wire M2. Vertical projection on the substrate S. That is, for the bending region 102, the pattern formed by the first conductive line M1 and the second conductive line M2 may be similar to the pattern of the first insulating layer ILD.

As shown in FIG. 1B, the flexible electronic device 100 may optionally include at least a second insulating layer OBP, wherein the second insulating layer OBP covers the first conductive wire M1 or Above the second wire M2. The material of the second insulating layer OBP may be an organic insulating material, an inorganic insulating material, or a combination thereof. The organic insulating material can be polyimide (PI), polyamic acid (PAA), polyamide (PA), polyvinyl alcohol (PVA), polyvinyl alcohol cinnamic acid Ester (polyvinyl cinnamate, PVCi), other suitable photoresist materials, or combinations thereof. The inorganic insulating material may be silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof. The thickness of the second insulating layer OBP is, for example, 1 μm or more and 10 μm or less.

In some embodiments, for the bending region 102, the second insulating layer OBP may entirely cover the first conductive line M1 and the second conductive line M2. In other embodiments, the second insulating layer OBP may include a plurality of second insulating layers OBP (as shown in FIG. 1B), and the above-mentioned second insulating layers OBP respectively cover the corresponding first wires M1. In this embodiment, the second insulating layer OBP and the first insulating layer ILD may have a similar pattern. For example, for the bending region 102, the vertical projection of the first insulating layer ILD on the flexible substrate S is the same as the vertical projection of the second insulating layer OBP on the flexible substrate S (as shown in FIG. 1B). ).

Based on the above, in the flexible electronic device 100 of the above embodiment, since the buffer layer BL is separately disposed on the flexible substrate S, the first wires M1 are respectively disposed on the corresponding buffer layer BL and are located at the bends. The included angle between the first lead M1 and the bending axis BA in the region 102 is θ1, and 1 ° ≦ θ1 ≦ 30 °. In this way, the tensile stress to which the first wire M1 located in the bending area is subjected during bending can be significantly reduced, and the problem of disconnection at the place where the wire is easily bent can be improved.

FIG. 2 is a schematic top view of a flexible electronic device according to another embodiment of the present invention; The figure shows that the flexible electronic device 200 is similar to the flexible electronic device 100. The difference is that the outline of the component area 204 is rectangular, and the bending area 202 is provided around the component area 204, and the rest of the same or similar components The same or similar reference numerals are used, and the connection relationship, materials and processes of the same or similar components have been described in detail in the foregoing, so they will not be repeated hereafter. In addition, for clarity, the external circuit area 106 in FIG. 1A is omitted in FIG. 2.

Referring to FIG. 2, the flexible electronic device 200 may include a flexible substrate S, a plurality of buffer layers BL, a plurality of first conductive lines M1 and a plurality of second conductive lines M2.

The flexible substrate S may have a plurality of bending regions 202, a device region 204, and an external circuit region. The bending region 202 is disposed between the device region 204 and the external circuit region. In this embodiment, the outline of the element region 204 is rectangular, and the bending region 202 is disposed on four sides of the element region 204, wherein the element region 204 is connected to the bending region 202. The flexible substrate S may have a bending axis BA in the bending region 202. In this embodiment, each bending region 202 may have a bending axis BA, but the present invention is not limited thereto. In some embodiments, the bending axis BA of each bending region 202 can be used as a reference, and the external circuit region of the flexible substrate S can be bent to the back of the flexible substrate S (such as the device region 204 and the external circuit). Areas overlap each other) to achieve a narrow border design.

In this embodiment, the first conductive wire M1 and the second conductive wire M2 are respectively disposed in different bending regions 202, so that the thickness of the flexible electronic device 200 after bending can be reduced. For example, the first conductive wire M1 is disposed in the bending region 202 on one side of the element region 204; and the second conductive wire M2 is disposed in the bending region 202 on the other side of the element region 204.

In the following, Experimental Example 1, Experimental Example 2, Experimental Example 3, and Experimental Example 4 and Comparative Examples 1 and 2 describe the features of the present invention more specifically. Although the following embodiments are described, the materials used, the forming method, the processing details, the processing flow, and the like can be appropriately changed without going beyond the scope of the present invention. Therefore, the present invention should not be interpreted restrictively by the examples described below.

Experimental example 1

The stack of Experimental Example 1 sequentially forms a buffer layer, a conductive line, and an insulating layer on a flexible substrate, wherein the buffer layer is separately disposed on the flexible substrate; the conductive lines are respectively disposed on the corresponding buffer layer; and the insulating layers are respectively Cover the corresponding wires (as shown in Figure 1C or Figure 1D). In other words, a stack composed of a buffer layer, a conductive line, and an insulating layer is separately provided on a flexible substrate. In addition, the angle between the lead wire and the bending axis of Experimental Example 1 is about 30 degrees (as shown in FIG. 1C or FIG. 1D, the ratio of the distance A to the distance B is 3: 1).

Experimental example 2

The stack of Experimental Example 2 is similar to the stack of Experimental Example 1. The difference is that the angle between the wire of Experimental Example 2 and the bending axis is about 26.6 degrees (as shown in Figure 1C or Figure 1D. The ratio is 2: 1).

Experimental example 3

The stack of Experimental Example 3 is similar to the stack of Experimental Example 1. The difference is that the angle between the wire of Experimental Example 3 and the bending axis is about 2.9 degrees (as shown in Figure 1C or Figure 1D). The ratio is 20: 1).

Experimental Example 4

The stack of Experimental Example 4 is similar to the stack of Experimental Example 1. The difference is that The included angle between the conducting wire and the bending axis in Experimental Example 4 is about 1 degree (as shown in FIG. 1C or FIG. 1D, the ratio of the distance A to the distance B is 60: 1).

Comparative Example 1

The laminate of Comparative Example 1 is similar to the laminate of Experimental Example 1, except that the angle between the lead and the bending axis of Comparative Example 1 is about 90 degrees.

Comparative Example 2

The stack of Comparative Example 2 is similar to the stack of Experimental Example 1. The difference is that the angle between the wire of Comparative Example 2 and the bending axis is about 45 degrees (as shown in Figure 1C or Figure 1D). The ratio is 1: 1).

Comparative Example A

The laminate of Comparative Example A is similar to the laminate of Experimental Example 1, except that the entire buffer layer of Comparative Example A is covered on the flexible substrate.

Comparative Example B

The stack of Comparative Example B is similar to the stack of Comparative Example A, except that the angle between the wire of Comparative Example B and the bending axis is about 26.6 degrees.

Comparative Example C

The laminate of Comparative Example C is similar to the laminate of Comparative Example A, except that the angle between the wire of Comparative Example C and the bending axis is about 2.9 degrees.

Comparative example D

The laminate of Comparative Example D is similar to the laminate of Comparative Example A, except that the angle between the lead of the Comparative Example D and the bending axis is about 1 degree.

Comparative Example E

The laminate of Comparative Example E is similar to the laminate of Comparative Example A, except that the angle between the wire of Comparative Example E and the bending axis is about 90 degrees.

Comparative Example F

The laminate of Comparative Example F is similar to the laminate of Experimental Example A, except that the angle between the wire of Comparative Example F and the bending axis is about 45 degrees.

Experiment 1

The stacks of Experimental Example 1 to Experimental Example 4 and Comparative Examples 1, 2 and Comparative Examples A to F tested the stress of each stack with a bending radius (R) of 0.25 mm. The test results are shown in Table 1 below, where the distance A and distance B can refer to FIG. 1C or FIG. 1D.

As can be seen from Table 1, when the angle between the wire in the bending zone and the bending axis is 1 degree or more and 30 degrees or less, the stress on the wire in the bending zone is significantly reduced during bending. In addition, when the angle between the wire in the bending area and the bending axis is 2.9 degrees or more and 26.6 degrees or less, the wire in the bending area undergoes lower tensile stress during bending. In addition, compared to a laminate (Comparative Example A to Comparative Example F) in which the entire buffer layer is covered on a flexible substrate, the buffer layer is separately disposed on the flexible substrate, which can significantly reduce The tensile stress that the wire is subjected to when bent.

Experiment 2

The tensile strain tests were performed on Experimental Example 1 to Experimental Example 4 and Comparative Example 2 under different bending radii. The experimental results are shown in Table 2.

It can be known from Table 2 that even if the bending radius is reduced from 0.25mm to 0.1mm, the tensile strain can still be controlled at the angle between the wire in the bending zone and the bending axis of 1 degree or more and 30 degrees or less. Between about 0.05% and -0.2%, since the included angle is 2.9 degrees or more and 26.6 degrees or less, the tensile strain can be better controlled between about 0% and -0.2%. In contrast, whether the laminate of Comparative Example 2 is at a bending radius of 0.25 mm or 0.1 mm, the tensile strain is much larger than that of Experimental Examples 1 to 4 at the corresponding bending radius.

In summary, in the flexible electronic device of the above embodiment, the buffer layer is separately disposed on the flexible substrate, and the first wires are respectively disposed on the corresponding buffer layer and located in the first part of the bending area. The angle between a wire and the bending axis is θ1, and 1 ° ≦ θ1 ≦ 30 °. In this way, the tensile stress experienced by the first wire located in the bending area during bending can be significantly reduced, thereby improving the problem of broken wires where the wire is easily bent.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

Claims (11)

A flexible electronic device includes: a flexible substrate having a bending area and a component area connected to the bending area, wherein the flexible substrate has a bending axis in the bending area; and A plurality of buffer layers are separately disposed on the flexible substrate; and a plurality of first wires are respectively disposed on the corresponding buffer layers, and the first wires extend from the element region to the bend in a first direction; The folded area, wherein an included angle between the first conductive lines located in the folded area and the bending axis is θ1, and 1 ° ≦ θ1 ≦ 30 °. The flexible electronic device according to item 1 of the patent application scope, wherein 2.9 ° ≦ θ1 ≦ 26.6 °. The flexible electronic device according to item 1 of the scope of patent application, wherein an included angle between the buffer layers located in the bending area and the bending axis is θ2, and θ2 is substantially equal to θ1. The flexible electronic device according to item 3 of the scope of patent application, wherein for the bending area, the vertical projections of the buffer layers on the flexible substrate are the same as those of the first wires on the flexible substrate. The vertical projection on the flexible substrate, or the vertical projection of the buffer layers on the flexible substrate, is enlarged by 0 to 2 times the vertical projection of the first wires on the flexible substrate. The flexible electronic device according to item 1 of the scope of patent application, further comprising: a plurality of second wires respectively disposed on the corresponding first wires, wherein the second wires run along a second line from the component area. The direction extends to the bending area, and the second direction is different from the first direction. The angle between the second conductors located in the bending area and the bending axis is θ3, and 1 ° ≦ θ3 ≦ 30 °. The flexible electronic device according to item 5 of the scope of patent application, wherein 2.9 ° ≦ θ3 ≦ 26.6 °. The flexible electronic device according to item 5 of the scope of patent application, wherein the first wires and the second wires are staggered with each other in the bending area. The flexible electronic device according to item 5 of the scope of patent application, further comprising: a plurality of first insulating layers respectively disposed between the first wires and the second wires, wherein the first insulating layers are The included angle with the bending axis is θ4, and θ4 is substantially equal to θ3. The flexible electronic device according to item 8 of the scope of patent application, wherein, for the bending region, the vertical projections of the first insulating layers on the flexible substrate are the same as the second wires on the flexible substrate. The vertical projection on the flexible substrate, or the vertical projection of the first insulating layers on the flexible substrate, is scaled 0 to 2 times the vertical projection of the second wires on the flexible substrate. . The flexible electronic device according to item 1 of the scope of patent application, further comprising: at least a second insulating layer covering the first wires. The flexible electronic device according to item 10 of the scope of patent application, wherein the at least one second insulating layer includes a plurality of second insulating layers, and the second insulating layers respectively cover corresponding ones of the first wires. on.