TWI676868B - Exposure device, substrate processing apparatus, exposure method of substrate and substrate processing method - Google Patents

Exposure device, substrate processing apparatus, exposure method of substrate and substrate processing method Download PDF

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TWI676868B
TWI676868B TW107112043A TW107112043A TWI676868B TW I676868 B TWI676868 B TW I676868B TW 107112043 A TW107112043 A TW 107112043A TW 107112043 A TW107112043 A TW 107112043A TW I676868 B TWI676868 B TW I676868B
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substrate
section
processing chamber
mounting
processing
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TW107112043A
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TW201839522A (en
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福本靖博
Yasuhiro Fukumoto
大木孝文
Takafumi OKI
松尾友宏
Tomohiro Matsuo
浅井正也
Masaya Asai
春本将彦
Masahiko Harumoto
田中裕二
Yuji Tanaka
中山知佐世
Chisayo NAKAYAMA
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日商斯庫林集團股份有限公司
SCREEN Holdings Co., Ltd.
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Abstract

本發明以當向處理室內搬入基板時載置板位於處理室內之待機位置的方式,藉由驅動裝置使載置板移動至待機位置。當載置板至少位於待機位置時藉由冷卻部對載置板進行冷卻。於處理室內,將基板載置於載置板。藉由光源部出射真空紫外線。以當藉由光源部對基板照射真空紫外線時載置板位於較待機位置更靠近光源部之處理位置的方式,藉由驅動裝置使載置板移動至處理位置。以當向處理室外搬出基板時載置板位於處理室內之待機位置的方式,藉由驅動裝置使載置板移動至待機位置。In the present invention, when the substrate is carried into the processing chamber, the mounting plate is located in a standby position in the processing chamber, and the driving plate is moved to the standby position by a driving device. When the placing plate is at least in the standby position, the placing plate is cooled by the cooling section. The substrate is placed on a mounting plate in a processing chamber. Vacuum ultraviolet rays are emitted by the light source section. When the substrate is irradiated with vacuum ultraviolet rays by the light source section, the mounting plate is positioned closer to the processing position of the light source section than the standby position, and the mounting plate is moved to the processing position by the driving device. When the substrate is placed in a standby position in the processing room when the substrate is carried out to the processing room, the mounting plate is moved to the standby position by a driving device.

Description

曝光裝置、基板處理裝置、基板之曝光方法及基板處理方法Exposure device, substrate processing device, substrate exposure method, and substrate processing method

本發明係關於一種對基板進行曝光處理之曝光裝置、基板處理裝置、基板之曝光方法及基板處理方法。The present invention relates to an exposure apparatus, a substrate processing apparatus, a substrate exposure method, and a substrate processing method that perform exposure processing on a substrate.

近年來,為了使形成於基板之圖案微細化,正在不斷推進利用嵌段共聚物之定向自組裝(DSA:Directed Self Assembly)之光微影技術之開發。於此種光微影技術中,對塗佈有嵌段聚合物之基板實施加熱處理後,對基板之一面進行曝光,藉此使嵌段聚合物改質。於該處理中,要求準確地調整基板之曝光量。 於專利文獻1中,記載有對基板上之包含定向自組裝材料之膜(DSA膜)進行曝光處理的曝光裝置。曝光裝置構成為包含可出射截面為帶狀之真空紫外線之光出射部,且基板能夠以橫穿來自光出射部之真空紫外線之路徑之方式自光出射部之前方位置向後方位置移動。於曝光處理前,藉由照度感測器預先檢測真空紫外線之照度,基於所檢測之照度計算出基板之移動速度,以便照射所期望之曝光量之真空紫外線。於曝光處理時,藉由使基板以所計算出之移動速度移動,而將所期望之曝光量之真空紫外線照射至基板上之DSA膜。 [專利文獻1]日本專利特開2016-183990號公報In recent years, in order to miniaturize the pattern formed on the substrate, the development of photolithography technology using Directed Self Assembly (DSA) of block copolymers has been continuously promoted. In such a photolithography technique, after a substrate coated with a block polymer is subjected to a heat treatment, one side of the substrate is exposed, thereby modifying the block polymer. In this process, it is required to accurately adjust the exposure amount of the substrate. Patent Document 1 describes an exposure apparatus that exposes a film (DSA film) containing an oriented self-assembly material on a substrate. The exposure device is configured to include a light emitting portion that can emit vacuum ultraviolet rays with a cross-section in a band shape, and the substrate can move from a position in front of the light emitting portion to a rear position so as to cross the path of the vacuum ultraviolet rays from the light emitting portion. Before the exposure process, the illuminance sensor detects the illuminance of vacuum ultraviolet rays in advance, and calculates the movement speed of the substrate based on the detected illuminance so as to irradiate the vacuum ultraviolet rays with a desired exposure amount. During the exposure process, the DSA film on the substrate is irradiated with vacuum ultraviolet rays of a desired exposure amount by moving the substrate at the calculated moving speed. [Patent Document 1] Japanese Patent Laid-Open No. 2016-183990

[發明所欲解決之問題] 於曝光處理中,因對基板照射真空紫外線而使基板被加熱,基板之溫度上升。若藉由搬送裝置之保持部將具有較高溫度之基板自曝光裝置搬出,則搬送裝置之保持部之溫度上升。於該情形時,藉由曝光裝置之保持部搬送之其他基板之溫度亦會上升。基板溫度之變動對基板處理之均勻性造成影響。因此,於曝光裝置內使基板之溫度降低至特定溫度(例如50度)以下後,自曝光裝置搬出基板。然而,使基板之溫度降低至特定溫度以下要花費時間,因此基板之曝光處理之效率降低。 本發明之目的在於提供一種可使基板之曝光處理之效率提昇之曝光裝置、基板處理裝置、曝光方法及基板處理方法。 [解決問題之技術手段] (1)根據本發明之一態樣之曝光裝置包括:處理室,其收容基板;載置部,其於處理室內載置基板;光源部,其出射真空紫外線;驅動部,其以如下方式使載置部移動至第1位置與第2位置,即,當向處理室內搬入基板及向處理室外搬出基板時,載置部位於處理室內之第1位置,且當利用光源部對基板照射真空紫外線時,載置部位於較第1位置更靠近光源部之第2位置;及冷卻部,其於載置部至少位於第1位置時對載置部進行冷卻。 於該曝光裝置中,於處理室收容基板。以當向處理室內搬入基板時載置部位於處理室內之第1位置的方式,藉由驅動部使載置部移動至第1位置。當載置部至少位於第1位置時,藉由冷卻部對載置部進行冷卻。於處理室內,將基板載置於載置部。藉由光源部出射真空紫外線。以當藉由光源部對基板照射真空紫外線時載置部位於較第1位置更靠近光源部之第2位置的方式,藉由驅動部使載置部移動至第2位置。以當向處理室外搬出基板時載置部位於處理室內之第1位置之方式,藉由驅動部使載置部移動至第1位置。 根據該構成,當藉由光源部對基板照射真空紫外線時,基板以載置於載置部之狀態接近光源部。此處,載置部藉由冷卻部而預先冷卻,因此即便於藉由光源部對基板照射真空紫外線之情形時,基板之溫度亦不會上升至特定溫度以上。因此,無須使基板於處理室內待機,亦無須另外進行用以對基板進行冷卻之處理。 又,冷卻部對載置部之冷卻係與向處理室內搬入基板之處理及向處理室外搬出基板之處理同步進行,並且於處理室內不存在基板之期間進行。因此,無須另外確保用以藉由冷卻部對載置部進行冷卻之時間。該等之結果為,可提昇基板之曝光處理之效率。 (2)曝光裝置亦可進而包含於第1位置處與載置部接觸之接觸構件,且冷卻部以對接觸構件進行冷卻之方式設置於接觸構件。於該情形時,載置部藉由於第1位置處與接觸構件接觸,而經由接觸構件被冷卻部冷卻。因此,無須於載置部設置冷卻部,且無須將用以驅動冷卻部之驅動裝置連接於設置於載置部之冷卻部。藉此,可將用以使載置部於第1位置與第2位置之間移動之構成簡化。 (3)載置部亦可具有下表面,且接觸構件可具有於載置部之冷卻時與載置部之下表面接觸之接觸面。於該情形時,遍及大範圍地進行熱自載置部向接觸構件之移動。藉此,可高效率地對載置部進行冷卻。 (4)光源部亦可配置於載置部之上方,向下方出射真空紫外線,第2位置可位於光源部之下方,第1位置位於第2位置之下方,且驅動部可使載置部於第1位置與第2位置之間升降。於該情形時,藉由使載置部下降至第1位置,不會使基板與光源部相互干涉,而可將基板容易地搬入處理室內,或將基板容易地搬出至處理室外。又,藉由於載置有基板之狀態下使載置部上升至第2位置,而可使基板與光源部容易地接近。 (5)冷卻部亦可配置於載置部之下方,當載置部位於第1位置時與載置部接觸。於該情形時,藉由使載置部下降至第1位置,而可使載置部與冷卻部接觸從而容易地將其冷卻。 (6)曝光裝置亦可進而包括自接觸構件向上方延伸之複數個支持構件,複數個支持構件之上端可高於第1位置且低於第2位置,載置部可包含複數個支持構件可通過之複數個貫通孔,且複數個支持構件當載置部位於第1位置時貫通載置部之複數個貫通孔。 於該情形時,複數個支持構件可於高於第1位置且低於第2位置之上端支持已搬入至處理室內之基板。因此,藉由使載置部自第1位置上升,可將基板容易地載置於載置部。又,藉由使載置部自第2位置下降,可將基板支持於複數個支持構件之上端。藉此,可將基板自複數個支持構件之上端容易地搬出至處理室外。 (7)冷卻部亦可設置於載置部。於該情形時,可藉由冷卻部持續地對載置部進行冷卻。藉此,可更加高效率地對載置部進行冷卻。 (8)驅動部亦可於開始利用光源部出射真空紫外線後使載置部自第1位置移動至第2位置。於該情形時,載置部自第1位置移動至第2位置之時點較開始利用光源部出射真空紫外線之時點更後。因此,可於第1位置藉由冷卻部對載置部充分進行冷卻。 (9)驅動部亦可於停止利用光源部出射真空紫外線前使載置部自第2位置移動至第1位置。於該情形時,載置部自第2位置移動至第1位置之時點較停止利用光源部出射真空紫外線之時點更前。因此,可於第1位置藉由冷卻部對載置部充分進行冷卻。 (10)光源部亦可以出射具有面狀之截面之真空紫外線之方式構成。於該情形時,大範圍地出射真空紫外線。因此,於更短時間內結束基板之曝光。藉此,可進一步提昇基板之曝光處理之效率。 (11)光源部之真空紫外線之出射面積亦可大於基板之面積。於該情形時,可對基板之整個面進行曝光,因此於更短時間內結束基板之曝光。藉此,可進而提高基板之曝光處理之效率。 (12)根據本發明之另一態樣之基板處理裝置包括:塗佈處理部,其藉由於基板塗佈處理液而於基板形成膜;熱處理部,其對已藉由塗佈處理部形成有膜之基板進行熱處理;根據本發明之一態樣之曝光裝置,其對已藉由熱處理部進行熱處理之基板進行曝光;及顯影處理部,其對已藉由曝光裝置進行曝光之基板供給溶劑,藉此對基板之膜進行顯影。 於該基板處理裝置中,藉由塗佈處理部於基板塗佈處理液,藉此於基板形成膜。藉由熱處理部對已藉由塗佈處理部而形成有膜之基板進行熱處理。藉由上述曝光裝置而對已藉由熱處理部進行熱處理之基板進行曝光。藉由顯影處理部對已藉由曝光裝置進行曝光之基板供給溶劑,藉此對基板之膜進行顯影。 於曝光裝置中,載置部已預先藉由冷卻部進行冷卻,因此即便於藉由光源部對基板照射真空紫外線之情形時,基板之溫度亦不會上升至特定溫度以上。因此,無須使基板於處理室內待機,亦無須另外進行用以使基板冷卻之處理。 又,冷卻部對載置部之冷卻係與向處理室內搬入基板之處理及向處理室外搬出基板之處理同步進行,並且於處理室內不存在基板之期間進行。因此,無須另外確保用以藉由冷卻部對載置部進行冷卻之時間。該等之結果為,可提昇基板之曝光處理之效率。 (13)處理液亦可包含定向自組裝材料。於該情形時,藉由對塗佈有包含定向自組裝材料之處理液之基板進行熱處理,而於基板之一面上產生微相分離。又,對藉由微相分離而形成有2種聚合物之圖案之基板進行曝光及顯影。藉此,將2種聚合物中之一種去除,從而可形成經微細化之圖案。 (14)根據本發明之進而另一態樣之曝光方法包含如下步驟:於處理室收容基板;以當向處理室內搬入基板時載置部位於處理室內之第1位置的方式,藉由驅動部使載置部移動至第1位置;當載置部至少位於第1位置時,藉由冷卻部對載置部進行冷卻;於處理室內,將基板載置於載置部;藉由光源部出射真空紫外線;以當藉由光源部對基板照射真空紫外線時載置部位於較第1位置更靠近光源部之第2位置的方式,藉由驅動部使載置部移動至第2位置;及以當向處理室外搬出基板時載置部位於處理室內之第1位置的方式,藉由驅動部使載置部移動至第1位置。 根據該曝光方法,載置部已預先藉由冷卻部進行冷卻,因此即便於藉由光源部對基板照射真空紫外線之情形時,基板之溫度亦不會上升至特定溫度以上。因此,無須使基板於處理室內待機,亦無須另外進行用以使基板冷卻之處理。又,冷卻部對載置部之冷卻係與向處理室內搬入基板之處理及向處理室外搬出基板之處理同步進行,並且於處理室內不存在基板之期間進行。因此,無須另外確保用以藉由冷卻部對載置部進行冷卻之時間。該等之結果為,可提昇基板之曝光處理之效率。 (15)根據本發明之進而另一態樣之基板處理方法包含:藉由塗佈處理部於基板之被處理面塗佈處理液,藉此於基板形成膜的步驟;藉由熱處理部,對已藉由塗佈處理部而形成有膜之基板進行熱處理的步驟;根據本發明之進而另一態樣之曝光方法,其藉由曝光裝置,對已藉由熱處理部進行熱處理之基板進行曝光;及藉由顯影處理部,對已藉由曝光裝置進行曝光之基板之被處理面供給溶劑,藉此對基板之膜進行顯影。 根據該基板處理方法,藉由真空紫外線對形成膜後且顯影前之基板進行曝光。於曝光方法中,載置部已預先藉由冷卻部進行冷卻,因此即便於藉由光源部對基板照射真空紫外線之情形時,基板之溫度亦不會上升至特定溫度以上。因此,無須使基板於處理室內待機,亦無須另外進行用以使基板冷卻之處理。又,冷卻部對載置部之冷卻係與向處理室內搬入基板之處理及向處理室外搬出基板之處理同步進行,並且於處理室內不存在基板之期間進行。因此,無須另外確保用以藉由冷卻部對載置部進行冷卻之時間。該等之結果為,可提昇基板之曝光處理之效率。 [發明之效果] 根據本發明,可提昇基板之曝光處理之效率。[Problems to be Solved by the Invention] In the exposure process, the substrate is heated by irradiating the substrate with vacuum ultraviolet rays, and the temperature of the substrate rises. When a substrate having a relatively high temperature is carried out from the exposure device by the holding portion of the carrying device, the temperature of the holding portion of the carrying device rises. In this case, the temperature of other substrates transferred by the holding section of the exposure apparatus will also rise. Variations in substrate temperature affect the uniformity of substrate processing. Therefore, after the temperature of the substrate is lowered below a specific temperature (for example, 50 degrees) in the exposure device, the substrate is carried out from the exposure device. However, it takes time to reduce the temperature of the substrate to a specific temperature or lower, so the efficiency of the substrate exposure process is reduced. An object of the present invention is to provide an exposure device, a substrate processing device, an exposure method, and a substrate processing method that can improve the efficiency of substrate exposure processing. [Technical means to solve the problem] (1) An exposure apparatus according to one aspect of the present invention includes: a processing chamber that houses a substrate; a mounting section that mounts the substrate in the processing chamber; a light source section that emits vacuum ultraviolet rays; a drive It moves the placement section to the first position and the second position in such a manner that the placement section is located at the first position in the processing chamber when the substrate is moved into the processing chamber and the substrate is removed from the processing chamber, and when When the light source section irradiates the substrate with vacuum ultraviolet rays, the mounting section is located at a second position closer to the light source section than the first position; and the cooling section cools the mounting section when the mounting section is at least in the first position. In this exposure apparatus, a substrate is housed in a processing chamber. The driving section moves the mounting section to the first position so that the mounting section is located at the first position in the processing chamber when the substrate is carried into the processing chamber. When the placement portion is at least in the first position, the placement portion is cooled by the cooling portion. The substrate is placed on the placing section in the processing chamber. Vacuum ultraviolet rays are emitted by the light source section. When the substrate is irradiated with vacuum ultraviolet rays by the light source section, the mounting section is positioned at the second position closer to the light source section than the first position, and the mounting section is moved to the second position by the driving section. When the mounting portion is located at the first position in the processing chamber when the substrate is carried out to the processing room, the mounting portion is moved to the first position by the driving portion. According to this configuration, when the substrate is irradiated with vacuum ultraviolet rays by the light source section, the substrate approaches the light source section while being placed on the placement section. Here, since the mounting portion is cooled in advance by the cooling portion, even when the substrate is irradiated with vacuum ultraviolet rays by the light source portion, the temperature of the substrate does not rise above a specific temperature. Therefore, it is not necessary to make the substrate stand by in the processing chamber, and it is not necessary to perform a separate process for cooling the substrate. In addition, the cooling of the placing section by the cooling section is performed in synchronization with the processing of transferring the substrate into the processing chamber and the processing of transferring the substrate out of the processing chamber, and is performed while the substrate is not present in the processing chamber. Therefore, it is not necessary to separately secure a time for cooling the placement section by the cooling section. As a result, the efficiency of the substrate exposure process can be improved. (2) The exposure device may further include a contact member in contact with the placement portion at the first position, and the cooling portion may be provided on the contact member to cool the contact member. In this case, the placing section is cooled by the cooling section via the contact member when the placing section contacts the contact member at the first position. Therefore, there is no need to provide a cooling section in the mounting section, and it is not necessary to connect a driving device for driving the cooling section to the cooling section provided in the mounting section. Thereby, the structure for moving a mounting part between a 1st position and a 2nd position can be simplified. (3) The mounting portion may have a lower surface, and the contact member may have a contact surface that contacts the lower surface of the mounting portion when the mounting portion is cooled. In this case, movement of the thermal self-mounting portion to the contact member is performed over a wide area. Thereby, the mounting part can be efficiently cooled. (4) The light source section can also be arranged above the mounting section and emits vacuum ultraviolet rays downward. The second position can be positioned below the light source section and the first position can be positioned below the second position. The driving section can place the mounting section on the Lift between the first position and the second position. In this case, by lowering the placement portion to the first position, the substrate and the light source portion do not interfere with each other, and the substrate can be easily carried into the processing chamber or the substrate can be easily carried out of the processing chamber. In addition, the substrate and the light source portion can be easily accessed by raising the placement portion to the second position while the substrate is placed. (5) The cooling section may be disposed below the placing section, and is in contact with the placing section when the placing section is located at the first position. In this case, by lowering the placement portion to the first position, the placement portion can be brought into contact with the cooling portion to easily cool it. (6) The exposure device may further include a plurality of support members extending upward from the contact member. The upper end of the plurality of support members may be higher than the first position and lower than the second position, and the mounting portion may include a plurality of support members. The plurality of through holes that pass through, and the plurality of support members penetrate the plurality of through holes of the mounting portion when the mounting portion is located at the first position. In this case, the plurality of supporting members may support the substrate that has been moved into the processing chamber at an upper end higher than the first position and lower than the second position. Therefore, the substrate can be easily placed on the placement portion by raising the placement portion from the first position. In addition, by lowering the mounting portion from the second position, the substrate can be supported on the upper ends of the plurality of supporting members. Thereby, the substrate can be easily carried out from the upper end of the plurality of supporting members to the processing room. (7) The cooling section may be provided on the placement section. In this case, the mounting section can be continuously cooled by the cooling section. Thereby, the mounting part can be cooled more efficiently. (8) The driving unit may also move the mounting unit from the first position to the second position after starting to use the light source unit to emit vacuum ultraviolet rays. In this case, the time point at which the mounting portion is moved from the first position to the second position is later than the time point at which the vacuum ultraviolet rays are emitted from the light source portion. Therefore, the placement portion can be sufficiently cooled by the cooling portion at the first position. (9) The driving unit may move the mounting unit from the second position to the first position before stopping the use of the light source unit to emit the vacuum ultraviolet light. In this case, the time point at which the placement section is moved from the second position to the first position is earlier than the time point at which the use of the light source section to stop emitting vacuum ultraviolet rays. Therefore, the placement portion can be sufficiently cooled by the cooling portion at the first position. (10) The light source unit may be configured to emit vacuum ultraviolet rays having a planar cross section. In this case, vacuum ultraviolet rays are emitted in a wide range. Therefore, the exposure of the substrate is ended in a shorter time. This can further improve the efficiency of the substrate exposure process. (11) The emission area of the vacuum ultraviolet rays of the light source portion may be larger than the area of the substrate. In this case, the entire surface of the substrate can be exposed, so the exposure of the substrate is ended in a shorter time. This can further improve the efficiency of the substrate exposure process. (12) A substrate processing apparatus according to another aspect of the present invention includes: a coating processing section that forms a film on a substrate by applying a processing liquid to the substrate; and a thermal processing section that is formed with the coating processing section. The substrate of the film is heat-treated; the exposure device according to one aspect of the present invention exposes the substrate that has been heat-treated by the heat-treating portion; and the developing treatment portion that supplies the solvent to the substrate that has been exposed by the exposure device, Thereby, the film of the substrate is developed. In this substrate processing apparatus, a processing liquid is applied to a substrate by a coating processing unit, thereby forming a film on a substrate. The substrate having been formed with a film by the coating treatment portion is subjected to a heat treatment by a heat treatment portion. The substrate subjected to the heat treatment by the heat treatment section is exposed by the exposure apparatus described above. A solvent is supplied to the substrate that has been exposed by the exposure device by a development processing unit, thereby developing the film of the substrate. In the exposure device, the mounting section has been cooled by the cooling section in advance, so even when the substrate is irradiated with vacuum ultraviolet rays by the light source section, the temperature of the substrate does not rise above a specific temperature. Therefore, it is not necessary to make the substrate stand by in the processing chamber, and it is not necessary to separately perform a process for cooling the substrate. In addition, the cooling of the placing section by the cooling section is performed in synchronization with the processing of transferring the substrate into the processing chamber and the processing of transferring the substrate out of the processing chamber, and is performed while the substrate is not present in the processing chamber. Therefore, it is not necessary to separately secure a time for cooling the placement section by the cooling section. As a result, the efficiency of the substrate exposure process can be improved. (13) The treatment liquid may also include a directional self-assembling material. In this case, micro-phase separation occurs on one surface of the substrate by heat-treating the substrate coated with a processing solution containing an oriented self-assembly material. In addition, a substrate on which a pattern of two polymers was formed by microphase separation was exposed and developed. By removing one of the two polymers, a finer pattern can be formed. (14) According to yet another aspect of the present invention, the exposure method includes the steps of: accommodating the substrate in the processing chamber; and placing the substrate at the first position in the processing chamber when the substrate is carried into the processing chamber by the driving unit. Move the mounting portion to the first position; when the mounting portion is at least in the first position, cool the mounting portion by the cooling portion; place the substrate on the mounting portion in the processing chamber; and emit through the light source portion Vacuum ultraviolet light; the mounting portion is moved to the second position by the driving portion so that the mounting portion is located at the second position closer to the light source portion than the first position when the substrate is irradiated with the vacuum ultraviolet light by the light source portion; and When the substrate is carried out to the processing chamber, the mounting section is located at the first position in the processing chamber. The driving section moves the mounting section to the first position. According to this exposure method, the placing section is cooled by the cooling section in advance, so that even when the substrate is irradiated with vacuum ultraviolet rays by the light source section, the temperature of the substrate does not rise above a specific temperature. Therefore, it is not necessary to make the substrate stand by in the processing chamber, and it is not necessary to separately perform a process for cooling the substrate. In addition, the cooling of the placing section by the cooling section is performed in synchronization with the processing of transferring the substrate into the processing chamber and the processing of transferring the substrate out of the processing chamber, and is performed while the substrate is not present in the processing chamber. Therefore, it is not necessary to separately secure a time for cooling the placement section by the cooling section. As a result, the efficiency of the substrate exposure process can be improved. (15) According to yet another aspect of the present invention, a substrate processing method includes: a step of applying a processing solution to a processed surface of the substrate by a coating processing section, thereby forming a film on the substrate; A step of heat-treating the substrate on which the film has been formed by applying the processing portion; according to yet another aspect of the exposure method of the present invention, exposing the substrate that has been heat-treated by the heat-treatment portion by an exposure device; And, the development processing section supplies a solvent to the processed surface of the substrate that has been exposed by the exposure device, thereby developing the film of the substrate. According to this substrate processing method, the substrate after film formation and before development is exposed by vacuum ultraviolet rays. In the exposure method, the placement section has been cooled by the cooling section in advance, so even when the substrate is irradiated with vacuum ultraviolet rays by the light source section, the temperature of the substrate does not rise above a specific temperature. Therefore, it is not necessary to make the substrate stand by in the processing chamber, and it is not necessary to separately perform a process for cooling the substrate. In addition, the cooling of the placing section by the cooling section is performed in synchronization with the processing of transferring the substrate into the processing chamber and the processing of transferring the substrate out of the processing chamber, and is performed while the substrate is not present in the processing chamber. Therefore, it is not necessary to separately secure a time for cooling the placement section by the cooling section. As a result, the efficiency of the substrate exposure process can be improved. [Effects of the Invention] According to the present invention, the efficiency of the exposure processing of the substrate can be improved.

(1)曝光裝置之構成 以下,使用圖式,對本發明之實施形態之曝光裝置、基板處理裝置、曝光方法及基板處理方法進行說明。再者,於以下之說明中,基板係指半導體基板、液晶表示裝置或有機EL(Electro Luminescence,電致發光)顯示裝置等FPD(Flat Panel Display,平板顯示器)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板或太陽電池用基板等。圖1係表示本發明之實施形態之曝光裝置之構成之模式性剖視圖。如圖1所示,曝光裝置100包含控制部110、處理室120、封閉部130、交接部140、升降部150、投光部160、置換部170及計測部180。控制部110自計測部180獲取計測值,並控制封閉部130、升降部150、投光部160及置換部170之動作。對於控制部110之功能將於下文敍述。 處理室120包含具有上部開口及內部空間之殼體121、環狀構件122及被覆構件123。於殼體121之側面,形成有用以於殼體121之內部與外部之間搬送處理對象之基板W的搬送開口121a。再者,於本實施形態中,於處理對象之基板W,形成有包含定向自組裝材料之膜(以下,稱為DSA(Directed Self Assembly)膜)。又,於殼體121之底面,形成有供下述升降部150之連結構件152通過之開口部121b。 下述投光部160之外罩161係經由環狀構件122而配置於殼體121之上部,藉此將殼體121之上部開口封閉。於殼體121與環狀構件122之間、及環狀構件122與外罩161之間,分別安裝有密封構件s1、s2。又,以覆蓋環狀構件122之外周面之方式於殼體121與外罩161之間安裝有被覆構件123。 封閉部130包含擋板131、棒形狀之連結構件132及驅動裝置133。連結構件132將擋板131與驅動裝置133連結。驅動裝置133例如為步進馬達。驅動裝置133使擋板131於擋板131使搬送開口121a敞開之敞開位置與擋板131將搬送開口121a封閉之封閉位置之間移動。 於擋板131安裝有密封構件131a。於擋板131處於封閉位置之狀態下,密封構件131a密接於殼體121中之包圍搬送開口121a之部分,藉此將殼體121之內部密閉。再者,為了防止密封構件131a與殼體121之摩擦,驅動裝置133當使擋板131於敞開位置與封閉位置之間移動時,使擋板131以離開殼體121之狀態沿上下方向移動。 於驅動裝置133,安裝有分別檢測擋板131之上限位置及下限位置之位置感測器133a、133b。位置感測器133a、133b將檢測結果賦予控制部110。於本實施形態中,驅動裝置133及下述驅動裝置153係設置於處理室120之外。因此,即便於因驅動裝置133、153之驅動而產生塵埃之情形時,仍可防止塵埃直接侵入殼體121內。 交接部140例如包含圓板形狀之支持板141、複數個(本例中為3個)支持銷142及冷卻部143。支持板141係以水平姿勢配置於殼體121內。於支持板141之中央部,形成有供下述升降部150之連結構件152通過之開口部141a。複數個支持銷142以包圍開口部141a之方式自支持板141之上表面向上方延伸。於複數個支持銷142之上端142a,可載置處理對象之基板W。 圖2係表示交接部140之支持板141之俯視圖。如圖2所示,冷卻部143包含冷卻管143a及介質供給源143b。冷卻管143a係設置為以與支持板141接觸之狀態盤曲並且環繞於支持板141內。冷卻管143a之兩端係連接於介質供給源143b。介質供給源143b自冷卻管143a之一端向冷卻管143a內供給冷卻介質,且自冷卻管143a之另一端回收冷卻介質。藉此,使冷卻介質於冷卻管143a內循環,對支持板141進行冷卻。 於本實施形態中,介質供給源143b為恆溫水循環裝置,供給恆溫之純水作為冷卻介質,但本發明並不限定於此。介質供給源143b亦可為冷卻水循環裝置,供給經冷卻之純水作為冷卻介質。又,冷卻管143a係設置於支持板141內,但本發明並不限定於此。冷卻管143a例如亦可以與支持板141之下表面接觸之狀態設置於支持板141外。 圖1之升降部150包含平板形狀之載置板151、棒形狀之連結構件152及驅動裝置153。載置板151於殼體121內係以水平姿勢配置於交接部140之支持板141之上方。於載置板151,形成有與支持板141之複數個支持銷142分別相對應之複數個貫通孔151a。 連結構件152係以通過殼體121之開口部121b及支持板141之開口部141a而上下延伸之方式配置,驅動裝置153係配置於殼體121之下方。連結構件152將載置板151與驅動裝置153連結。於連結構件152之外周面與開口部121b之內周面之間,以使連結構件152可沿上下方向滑動之方式配置有密封構件s3。 驅動裝置153例如為步進馬達,使載置板151沿上下方向於較複數個支持銷142之上端142a更上方之處理位置、與較複數個支持銷142之上端142a更下方之待機位置之間移動。於驅動裝置153,安裝有分別檢測載置板151之上限位置及下限位置之位置感測器153a、153b。位置感測器153a、153b將檢測結果賦予控制部110。 於載置板151處於待機位置之狀態下,複數個支持銷142分別插通於複數個貫通孔151a,載置板151之下表面151b與支持板141之上表面(接觸面)141b接觸。藉此,載置板151係經由支持板141而被冷卻部143冷卻。 投光部160包含具有下部開口及內部空間之外罩161、透光板162、面狀之光源部163及電源裝置164。於本實施形態中,透光板162為石英玻璃板。作為透光板162之材料,亦可使用使下述真空紫外線透過之其他材料。如上所述,外罩161係以封閉殼體121之上部開口之方式配置於殼體121之上部。透光板162係以封閉外罩161之下部開口之方式安裝於外罩161。殼體121之內部空間與外罩161之內部空間係藉由透光板162而可光學接入地隔開。 光源部163及電源裝置164係收容於外罩161內。於本實施形態中,藉由將出射波長約120 nm以上且約230 nm以下之真空紫外線之複數個棒形狀之光源以特定間隔水平排列而構成光源部163。各光源例如可為氙氣準分子燈,亦可為其他準分子燈或氘燈等。光源部163通過透光板162而對殼體121內出射具有大致均勻之光量分佈之真空紫外線。光源部163之真空紫外線之出射面之面積大於基板W之被處理面之面積。電源裝置164對光源部163供給電力。 置換部170包含配管171p、172p、173p、閥171v、172v及抽吸裝置173。配管171p、172p係連接於殼體121之供氣口與惰性氣體供給源之間。於本實施形態中,惰性氣體例如為氮氣。於配管171p、172p介插有閥171v、172v。通過配管171p而自支持板141之側方對殼體121內供給惰性氣體。通過配管172p而自支持板141之下方對殼體121內供給惰性氣體。惰性氣體之流量係藉由閥171v、172v而調整。於本實施形態中,使用氮氣作為惰性氣體。 配管173p分支為分支管173a與分支管173b。分支管173a係連接於殼體121之排氣口,分支管173b之端部係配置於殼體121與擋板131之間。於配管173p介插有抽吸裝置173。於分支管173b介插有閥173v。抽吸裝置173例如為噴射器。配管173p係連接於排氣設備。 抽吸裝置173將殼體121內之氣體通過分支管173a及配管173p而排出。又,抽吸裝置173將殼體121與擋板131之間之氣體與因擋板131之移動而產生之塵埃等一併通過分支管173b及配管173p排出。藉由抽吸裝置173排出之氣體係藉由排氣設備而無害化。 計測部180包含氧濃度計181、臭氧濃度計182及照度計183。氧濃度計181、臭氧濃度計182及照度計183係分別通過設置於殼體121之連接埠口p1、p2、p3而連接於控制部110。氧濃度計181例如為賈法尼電池式氧感測器或氧化鋯式氧感測器,對殼體121內之氧濃度進行計測。 臭氧濃度計182計測殼體121內之臭氧濃度。照度計183包含光電二極體等光接收元件,對照射至光接收元件之光接收面的來自光源部163之真空紫外線之照度進行計測。此處,照度係指照射至光接收面之每單位面積之真空紫外線之功率。照度之單位例如係以「W/m2 」表示。 (2)曝光裝置之概略動作 於曝光裝置100中,藉由自光源部163對基板W照射真空紫外線而進行曝光處理。然而,於殼體121內之氧濃度較高之情形時,氧分子會吸收真空紫外線而分離為氧原子,並且分離之氧原子會與其他氧分子再結合而產生臭氧。於該情形時,到達基板W之真空紫外線衰減。與較約230 nm長之波長的紫外線之衰減相比,真空紫外線之衰減更大。 因此,於曝光處理中,藉由置換部170將殼體121內之氣體置換為惰性氣體。藉此,使殼體121內之氧濃度降低。當藉由氧濃度計181所計測之氧濃度降低至預先規定之濃度時,自光源部163對基板W照射真空紫外線。此處,預先規定之濃度較佳為不會因藉由光源部163所出射之真空紫外線而產生臭氧之氧濃度(例如1%)。 當照射至基板W之真空紫外線之曝光量達到預先規定之設定曝光量時,停止真空紫外線之照射,曝光處理結束。此處,曝光量係指曝光處理時照射至基板W之被處理面之每單位面積之真空紫外線之能量。曝光量之單位例如係以「J/m2 」表示。因此,真空紫外線之曝光量係藉由將利用照度計183所計測之真空紫外線之照度累計而獲取。 於上述曝光處理中,因對基板W照射真空紫外線而使基板W被加熱。於該情形時,若基板W之溫度上升至特定溫度(例如50度)以上,則無法自曝光裝置搬出基板W,必須待機至基板W之溫度降低至未達特定溫度。因此,基板W之曝光處理之效率降低。 於本實施形態中,藉由於曝光處理前使載置板151移動至待機位置,並與支持板141接觸而將其預先冷卻。於曝光處理時,於載置板151載置基板W。其後,使載置板151移動至處理位置,於基板W接近光源部163之狀態下對基板W照射真空紫外線。於該情形時,由於基板W係載置於經冷卻之載置板151,故防止基板W之溫度上升至特定溫度以上。藉此,防止基板W之曝光處理之效率降低。 (3)控制部 圖3係表示圖1之控制部110之構成之功能方塊圖。如圖3所示,控制部110包含封閉控制部1、升降控制部2、排氣控制部3、供氣控制部4、濃度獲取部5、濃度比較部6、照度獲取部7、曝光量計算部8、曝光量比較部9及投光控制部10。 控制部110例如包含CPU(Central Processing Unit,中央運算處理裝置)及記憶體。於控制部110之記憶體中,預先記憶有控制程式。藉由使控制部110之CPU執行記憶體所記憶之控制程式,而實現控制部110之各部之功能。 封閉控制部1基於圖1之位置感測器133a、133b之檢測結果,以使擋板131於封閉位置與敞開位置之間移動之方式控制驅動裝置133。升降控制部2基於圖1之位置感測器153a、153b之檢測結果,以使載置板151於待機位置與處理位置之間移動之方式控制驅動裝置153。 排氣控制部3以將圖1之殼體121內之氣體及殼體121與擋板131之間之氣體排出之方式控制抽吸裝置173及閥173v。供氣控制部4以對殼體121內供給惰性氣體之方式控制圖1之閥171v、172v。 濃度獲取部5獲取藉由圖1之氧濃度計181所計測之氧濃度之值。濃度比較部6對藉由濃度獲取部5所計測之氧濃度與預先規定之濃度進行比較。 照度獲取部7獲取藉由圖1之照度計183所計測之真空紫外線之照度之值。曝光量計算部8基於藉由照度獲取部7所獲取之真空紫外線之照度與自圖1之光源部163對基板W之真空紫外線之照射時間,計算出照射至基板W之真空紫外線之曝光量。曝光量比較部9對藉由曝光量計算部8所算出之曝光量與預先規定之設定曝光量進行比較。 投光控制部10基於利用濃度比較部6所得之比較結果,以使光源部163出射真空紫外線之方式,控制自圖1之電源裝置164向光源部163之電力之供給。又,投光控制部10基於利用曝光量比較部9所得之比較結果,以使光源部163停止真空紫外線之出射之方式控制電源裝置164。 (4)曝光處理 圖4~圖7係用以對曝光裝置100之動作進行說明之模式圖。於圖4~圖7中,為了方便理解殼體121內及外罩161內之構成,而省略一部分構成要素之圖示,並且以單點鏈線表示殼體121及外罩161之輪廓。圖8及圖9係表示藉由圖3之控制部110所進行之曝光處理之一例之流程圖。以下,一面參照圖4~圖7,一面對藉由控制部110所進行之曝光處理進行說明。 如圖4所示,於曝光處理之初始狀態下,擋板131位於封閉位置,載置板151位於待機位置。因此,載置板151之下表面151b與支持板141之上表面141b接觸。藉此,經由支持板141而藉由冷卻管143a對載置板151進行預先冷卻。又,殼體121內之氧濃度係藉由氧濃度計181而持續地或定期地計測,且被濃度獲取部5所獲取。於該時點,藉由氧濃度計181所計測之殼體121內之氧濃度與大氣中之氧濃度相等。 首先,如圖5所示,封閉控制部1使擋板131移動至敞開位置(步驟S1)。藉此,通過搬送開口121a而將處理對象之基板W載置於複數個支持銷142之上端142a。於本例中,藉由下述圖10之搬送裝置220而將基板W載置於複數個支持銷142之上端142a。 其次,升降控制部2判定基板W是否已載置於複數個支持銷142之上端142a(步驟S2)。於未載置有基板W之情形時,升降控制部2待機至基板W被載置於複數個支持銷142之上端142a為止。於載置有基板W之情形時,如圖6所示,升降控制部2使擋板131移動至封閉位置(步驟S3)。 繼而,排氣控制部3藉由圖1之抽吸裝置173而將殼體121內之氣體排出(步驟S4)。又,供氣控制部4通過圖1之配管171p、172p而對殼體121內供給惰性氣體(步驟S5)。步驟S4、S5之處理可先開始任一者,亦可同時開始。 其後,濃度比較部6判定殼體121內之氧濃度是否已降低至特定濃度(步驟S6)。於氧濃度未降低至特定濃度之情形時,濃度比較部6待機至氧濃度降低至特定濃度為止。於氧濃度已降低至特定濃度之情形時,投光控制部10藉由光源部163而出射真空紫外線(步驟S7)。 其次,如圖7所示,升降控制部2使載置板151移動至處理位置(步驟S8)。藉此,自複數個支持銷142將基板W交接至載置板151。於該情形時,基板W係藉由載置板151一面冷卻一面接近透光板162。於該狀態下,自光源部163通過透光板162對基板W照射真空紫外線,從而對形成於被處理面之DSA膜進行曝光。 此處,照度獲取部7使照度計183開始計測真空紫外線之照度,並自照度計183獲取所計測之照度(步驟S9)。曝光量計算部8藉由將以照度獲取部7所獲取之真空紫外線之照度進行累計而計算出照射至基板W之真空紫外線之曝光量(步驟S10)。 繼而,曝光量比較部9判定藉由曝光量計算部8所算出之曝光量是否已達到設定曝光量(步驟S11)。於曝光量未達到設定曝光量之情形時,曝光量比較部9待機至曝光量達到設定曝光量為止。 於曝光量達到設定曝光量之情形時,如圖6所示,升降控制部2使載置板151移動至待機位置(步驟S12)。藉此,將基板W自載置板151交接至複數個支持銷142。又,載置板151之下表面151b與支持板141之上表面141b接觸。藉此,載置板151藉由冷卻管143a而預先冷卻,以準備下一個搬入曝光裝置100之基板W之曝光處理。 其次,投光控制部10使來自光源部163之真空紫外線之出射停止(步驟S13)。又,照度獲取部7使藉由照度計183進行之照度之計測停止(步驟S14)。繼而,排氣控制部3使藉由抽吸裝置173進行之殼體121內之氣體之排出停止(步驟S15)。又,供氣控制部4使自配管171p、172p向殼體121內之惰性氣體之供給停止(步驟S16)。步驟S13~S16之處理可先開始任一者,亦可同時開始。 其後,如圖5所示,封閉控制部1使擋板131移動至敞開位置(步驟S17)。藉此,可通過搬送開口121a而將曝光後之基板W自複數個支持銷142上向殼體121之外部搬出。於本例中,藉由下述圖10之搬送裝置220而將基板W自複數個支持銷142上向殼體121之外部搬出。 其次,封閉控制部1判定是否已經自複數個支持銷142上搬出基板W(步驟S18)。於未搬出基板W之情形時,封閉控制部1待機至基板W自複數個支持銷142上搬出為止。於已搬出基板W之情形時,如圖4所示,封閉控制部1使擋板131移動至封閉位置(步驟S19),結束曝光處理。藉由反覆進行上述動作,而可對複數個基板W依序進行曝光處理。 於上述曝光處理中,於開始藉由光源部163出射真空紫外線後,使載置板151自待機位置移動至處理位置。又,於停止藉由光源部163出射真空紫外線前,使載置板151自處理位置移動待機位置。藉此,可於待機位置藉由冷卻管143a將載置板151充分冷卻。 另一方面,於可將載置板151充分冷卻之情形時,亦可於開始藉由光源部163出射真空紫外線前使載置板151自待機位置移動至處理位置。或者,亦可於停止藉由光源部163出射真空紫外線後使載置板151自處理位置移動至待機位置。即,步驟S8之處理亦可於步驟S7之處理前執行,步驟S12之處理亦可於步驟S13之處理後執行。 (5)基板處理裝置 圖10係表示包含圖1之曝光裝置100之基板處理裝置之整體構成之模式性方塊圖。於以下說明之基板處理裝置200中,進行利用嵌段共聚物之定向自組裝(DSA)之處理。具體而言,於基板W之被處理面上塗佈包含定向自組裝材料之處理液。其後,藉由定向自組裝材料所產生之微相分離而於基板W之被處理面上形成2種聚合物之圖案。將2種聚合物中之一種圖案藉由溶劑去除。 將包含定向自組裝材料之處理液稱為DSA液。又,將去除藉由微相分離而形成於基板W之被處理面上之2種聚合物之圖案中之一種的處理稱為顯影處理,將顯影處理所使用之溶劑稱為顯影液。 如圖10所示,基板處理裝置200除包含曝光裝置100以外,還包含控制裝置210、搬送裝置220、熱處理裝置230、塗佈裝置240及顯影裝置250。控制裝置210例如包含CPU及記憶體、或微電腦,控制搬送裝置220、熱處理裝置230、塗佈裝置240及顯影裝置250之動作。又,控制裝置210對控制部110賦予用以控制圖1之曝光裝置100之封閉部130、升降部150、投光部160及置換部170之動作之指令。 搬送裝置220一面保持處理對象之基板W一面於曝光裝置100、熱處理裝置230、塗佈裝置240及顯影裝置250之間搬送該基板W。熱處理裝置230於藉由塗佈裝置240進行塗佈處理及藉由顯影裝置250進行顯影處理之前後對基板W進行熱處理。 塗佈裝置240藉由對基板W之被處理面供給DSA液而進行膜之塗佈處理。於本實施形態中,作為DSA液,使用包含2種聚合物之嵌段共聚物。作為2種聚合物之組合,例如可列舉聚苯乙烯-聚甲基丙烯酸甲酯(PS-PMMA)、聚苯乙烯-聚二甲基矽氧烷(PS-PDMS)、聚苯乙烯-聚二茂鐵基二甲基矽氧烷(PS-PFS)、聚苯乙烯-聚環氧乙烷(PS-PEO)、聚苯乙烯-聚乙烯吡啶(PS-PVP)、聚苯乙烯-聚羥基苯乙烯(PS-PHOST)、及聚甲基丙烯酸甲酯-聚甲基丙烯酸酯多面體寡聚聚倍半矽氧烷(Methacrylate-Polymethacrylate Polyhedral Oligomeric Polysilsesquioxane)(PMMA-PMAPOSS)等。 顯影裝置250藉由對基板W之被處理面供給顯影液,而進行膜之顯影處理。作為顯影液之溶劑,例如可列舉甲苯、庚烷、丙酮、丙二醇單甲醚乙酸酯(PGMEA)、丙二醇單甲醚(PGME)、環己酮、乙酸、四氫呋喃、異丙醇(IPA)或氫氧化四甲基銨(TMAH)等。 圖11係表示藉由圖10之基板處理裝置200所進行之基板W之處理之一例的模式圖。於圖11中,以剖視圖表示進行每個處理時發生變化之基板W之狀態。於本例中,作為將基板W搬入基板處理裝置200前之初始狀態,如圖11(a)所示,以覆蓋基板W之被處理面之方式形成有基底層L1,於基底層L1上形成有例如包含光阻之導引圖案L2。以下,使用圖10及圖11對基板處理裝置200之動作進行說明。 搬送裝置220將處理對象之基板W依序搬送至熱處理裝置230及塗佈裝置240。於該情形時,於熱處理裝置230中,將基板W之溫度調整至適於形成DSA膜之溫度。又,於塗佈裝置240中,對基板W之被處理面供給DSA液,進行塗佈處理。藉此,如圖11(b)所示,於未形成有導引圖案L2之基底層L1上之區域,形成有包含2種聚合物之DSA膜L3。 其次,搬送裝置220將形成有DSA膜L3之基板W依序搬送至熱處理裝置230及曝光裝置100。於該情形時,藉由於熱處理裝置230中進行基板W之加熱處理,而於DSA膜L3產生微相分離。藉此,如圖11(c)所示,形成包含一種聚合物之圖案Q1及包含另一種聚合物之圖案Q2。於本例中,以沿導引圖案L2之方式指向性地形成線狀之圖案Q1及線狀之圖案Q2。 其後,於熱處理裝置230中,對基板W進行冷卻。又,於曝光裝置100中,對微相分離後之DSA膜L3之整體照射用以使DSA膜L3改質之真空紫外線,進行曝光處理。藉此,將一種聚合物與另一種聚合物之間之結合切斷,使圖案Q1與圖案Q2分離。 繼而,搬送裝置220將已藉由曝光裝置100進行曝光處理後之基板W依序搬送至熱處理裝置230及顯影裝置250。於該情形時,於熱處理裝置230中,對基板W進行冷卻。又,於顯影裝置250中,對基板W上之DSA膜L3供給顯影液,進行顯影處理。藉此,如圖11(d)所示,將圖案Q1去除,最終於基板W上保留圖案Q2。最後,搬送裝置220將顯影處理後之基板W自顯影裝置250回收。 (6)效果 於本實施形態之曝光裝置100中,以當向處理室120內搬入基板W時載置板151位於待機位置的方式,藉由驅動裝置153而使載置板151移動至待機位置。於該狀態下,載置板151與支持板141接觸,藉此經由支持板141而藉由冷卻管143a對載置板151進行冷卻。其後,藉由使載置板151向上方移動,而將基板W自複數個支持銷142之上端142a交接至載置板151,從而載置於載置板151。 以當藉由光源部163對基板W照射真空紫外線時,載置板151位於較作為基板W之交接位置之複數個支持銷142之上端142a更上方之處理位置的方式,藉由驅動裝置153使載置板151移動至處理位置。以當向處理室120外搬出基板W時載置板151位於待機位置的方式,藉由驅動裝置153使載置板151移動至待機位置。藉此,將基板W自載置板151交接至複數個支持銷142,從而支持於複數個支持銷142之上端142a。 根據該構成,可不使基板W與光源部163相互干涉,將基板W容易地搬入處理室120內,或將基板W容易地搬出至處理室120外。又,可於藉由光源部163對基板W照射真空紫外線時,以基板W載置於載置板151之狀態使基板W容易地接近光源部163。 此處,由於載置板151係藉由冷卻管143a而預先冷卻,因此即便於藉由光源部163對基板W照射真空紫外線之情形時,基板W之溫度亦不會上升至特定溫度以上。因此,無須使基板W於處理室120內待機,亦無須另外進行用以將基板W冷卻之處理。 又,冷卻管143a對載置板151之冷卻係與向處理室120內搬入基板W之處理及向處理室120外搬出基板W之處理同步進行,並係於處理室120內不存在基板W之期間進行。因此,無須另外確保用以藉由冷卻管143a對載置板151進行冷卻之時間。該等之結果為,可提昇基板W之曝光處理之效率。 進而,於上述實施形態中,經由支持板141並藉由冷卻管143a間接地對載置板151進行冷卻,因此無須將冷卻管143a設置於載置板151。因此,無須將介質供給源143b連接於載置板151上之冷卻部143。藉此,可將使載置板151於待機位置與處理位置之間移動之構成簡化。又,載置板151之下表面151b與支持板141之上表面141b係藉由遍及大範圍地接觸而進行熱自載置板151向支持板141之移動,因此可將載置板151高效率地冷卻。 (7)其他實施形態 (a)於上述實施形態中,冷卻部143包含冷卻管143a及介質供給源143b,但本發明並不限定於此。圖12係表示另一實施形態中之支持板141之俯視圖。如圖12所示,另一實施形態中,冷卻部143包含複數個(圖12之例中為8個)冷卻元件143c及電力供給源143d。各冷卻元件143c例如為具有冷卻面及加熱面之珀爾帖元件。 複數個冷卻元件143c係大致等間隔地配置為以冷卻面與支持板141接觸之狀態包圍開口部141a。各冷卻元件143c係連接於電力供給源143d。於圖12中,僅圖示有1個冷卻元件143c與電力供給源143d之連接,省略另外複數個冷卻元件143c與電力供給源143d之連接之圖示。藉由自電力供給源143d對各冷卻元件143c供給電力,而對支持板141進行冷卻。 (b)於上述實施形態中,於支持板141設置有冷卻管143a,載置板151係通過支持板141而藉由冷卻管143a間接地被冷卻,但本發明並不限定於此。亦可於載置板151設置有冷卻管143a,從而藉由冷卻管143a而直接冷卻載置板151。同樣地,亦可於載置板151設置有圖12之冷卻元件143c,從而藉由冷卻元件143c而直接冷卻載置板151。於該等情形時,可對載置板151持續地進行冷卻。 (c)於上述實施形態中,使用DSA液作為處理液,但本發明並不限定於此。亦可使用與DSA液不同之其他處理液。 (d)於上述實施形態中,真空紫外線之出射面大於基板W之被處理面,對基板W之整個面進行曝光,但本發明並不限定於此。真空紫外線之出射面既可小於基板W之被處理面,亦可出射不具有面狀之截面而具有線狀之截面之真空紫外線。於該情形時,藉由使真空紫外線之出射面與基板W之被處理面相對地移動而對基板W之被處理面之整體照射真空紫外線。 (e)於上述實施形態中,於曝光處理時對殼體121內供給惰性氣體,但本發明並不限定於此。於曝光處理時可充分地降低殼體121內之氧濃度之情形時,亦可不對殼體121內供給惰性氣體。 (8)申請專利範圍之各構成要素與實施形態之各部之對應關係 以下,對申請專利範圍之各構成要素與實施形態之各構成要素之對應之例進行說明,但本發明並不限定於下述之例。作為申請專利範圍之各構成要素,亦可使用具有申請專利範圍所記載之構成或功能之其他各種構成要素。 於上述實施形態中,基板W為基板之例,處理室120為處理室之例,載置板151為載置部之例,光源部163為光源部之例,驅動裝置153為驅動部之例,冷卻部143為冷卻部之例。曝光裝置100為曝光裝置之例,支持板141為接觸構件之例,下表面151b為下表面之例,上表面141b為接觸面之例,支持銷142為支持構件之例,上端142a為上端之例。貫通孔151a為貫通孔之例,塗佈裝置240為塗佈處理部之例,熱處理裝置230為熱處理部之例,顯影裝置250為顯影處理部之例,基板處理裝置200為基板處理裝置之例。(1) Structure of Exposure Apparatus Hereinafter, an exposure apparatus, a substrate processing apparatus, an exposure method, and a substrate processing method according to an embodiment of the present invention will be described using drawings. In the following description, the substrate refers to a substrate for an FPD (Flat Panel Display) such as a semiconductor substrate, a liquid crystal display device, or an organic EL (Electro Luminescence) display device, a substrate for an optical disk, and a magnetic disk. Substrates, substrates for magneto-optical disks, substrates for photomasks, substrates for solar cells, and the like. FIG. 1 is a schematic cross-sectional view showing the structure of an exposure apparatus according to an embodiment of the present invention. As shown in FIG. 1, the exposure apparatus 100 includes a control section 110, a processing chamber 120, a closed section 130, a transfer section 140, a lifting section 150, a light projection section 160, a replacement section 170, and a measurement section 180. The control unit 110 acquires a measurement value from the measurement unit 180 and controls operations of the closing unit 130, the lifting unit 150, the light projecting unit 160, and the replacement unit 170. The functions of the control unit 110 will be described later. The processing chamber 120 includes a casing 121 having an upper opening and an internal space, an annular member 122 and a covering member 123. A transfer opening 121 a is formed on a side surface of the case 121 for transferring the substrate W to be processed between the inside and the outside of the case 121. Furthermore, in this embodiment, a film (hereinafter, referred to as a DSA (Directed Self Assembly) film) including a directional self-assembly material is formed on the substrate W to be processed. Further, an opening portion 121b is formed on the bottom surface of the housing 121 to allow the connection member 152 of the elevating portion 150 described below to pass through. The outer cover 161 of the light-emitting portion 160 described below is disposed on the upper portion of the casing 121 via the ring-shaped member 122, thereby closing the opening of the upper portion of the casing 121. Between the housing 121 and the ring-shaped member 122, and between the ring-shaped member 122 and the cover 161, seal members s1 and s2 are respectively mounted. A covering member 123 is attached between the housing 121 and the cover 161 so as to cover the outer peripheral surface of the ring-shaped member 122. The closing portion 130 includes a baffle 131, a rod-shaped connecting member 132, and a driving device 133. The connecting member 132 connects the shutter 131 and the driving device 133. The driving device 133 is, for example, a stepping motor. The driving device 133 moves the baffle 131 between an open position where the baffle 131 opens the transfer opening 121a and a closed position where the baffle 131 closes the transfer opening 121a. A sealing member 131 a is attached to the baffle 131. In a state where the baffle plate 131 is in the closed position, the sealing member 131 a is in close contact with a portion of the casing 121 that surrounds the conveyance opening 121 a, thereby sealing the inside of the casing 121. Furthermore, in order to prevent friction between the sealing member 131 a and the case 121, when the driving device 133 moves the shutter 131 between the open position and the closed position, the drive device 133 moves the shutter 131 in a vertical direction while leaving the case 121. Position sensors 133a and 133b for detecting the upper limit position and the lower limit position of the baffle plate 131 are installed on the driving device 133, respectively. The position sensors 133a and 133b provide the detection result to the control unit 110. In this embodiment, the driving device 133 and the following driving device 153 are provided outside the processing chamber 120. Therefore, even when dust is generated by the driving of the driving devices 133 and 153, it is possible to prevent the dust from directly intruding into the housing 121. The transfer section 140 includes, for example, a circular plate-shaped support plate 141, a plurality of (three in this example) support pins 142, and a cooling section 143. The support plate 141 is disposed in the casing 121 in a horizontal posture. An opening portion 141 a is formed in the central portion of the support plate 141 and allows the connecting member 152 of the elevating portion 150 described below to pass through. The plurality of support pins 142 extend upward from the upper surface of the support plate 141 so as to surround the opening portion 141 a. On the upper end 142 a of the plurality of support pins 142, a substrate W to be processed can be placed. FIG. 2 is a plan view showing the support plate 141 of the transfer part 140. As shown in FIG. 2, the cooling unit 143 includes a cooling pipe 143 a and a medium supply source 143 b. The cooling pipe 143 a is provided to be coiled in a state in contact with the support plate 141 and surrounds the support plate 141. Both ends of the cooling pipe 143a are connected to a medium supply source 143b. The medium supply source 143b supplies a cooling medium into the cooling pipe 143a from one end of the cooling pipe 143a, and recovers the cooling medium from the other end of the cooling pipe 143a. Thereby, a cooling medium is circulated in the cooling pipe 143a, and the support plate 141 is cooled. In this embodiment, the medium supply source 143b is a constant-temperature water circulation device and supplies constant-temperature pure water as a cooling medium, but the present invention is not limited to this. The medium supply source 143b may also be a cooling water circulation device that supplies cooled pure water as a cooling medium. The cooling pipe 143a is provided in the support plate 141, but the present invention is not limited to this. The cooling pipe 143a may be provided outside the support plate 141 in a state of being in contact with the lower surface of the support plate 141, for example. The lifting portion 150 in FIG. 1 includes a flat plate-shaped mounting plate 151, a rod-shaped connecting member 152, and a driving device 153. The mounting plate 151 is disposed in the housing 121 above the support plate 141 of the transfer portion 140 in a horizontal posture. A plurality of through holes 151 a corresponding to the plurality of support pins 142 of the support plate 141 are formed in the mounting plate 151. The connecting member 152 is disposed so as to extend up and down through the opening 121 b of the case 121 and the opening 141 a of the support plate 141, and the driving device 153 is disposed below the case 121. The connecting member 152 connects the mounting plate 151 and the driving device 153. Between the outer peripheral surface of the connecting member 152 and the inner peripheral surface of the opening 121b, a sealing member s3 is arranged so that the connecting member 152 can slide in the vertical direction. The driving device 153 is, for example, a stepping motor, and places the mounting plate 151 in a vertical direction between a processing position above the upper end 142a of the plurality of support pins 142 and a standby position below the upper end 142a of the plurality of support pins 142 mobile. Position sensors 153a and 153b for detecting the upper limit position and the lower limit position of the mounting plate 151 are mounted on the driving device 153, respectively. The position sensors 153a and 153b provide the detection results to the control unit 110. When the mounting plate 151 is in the standby position, the plurality of support pins 142 are respectively inserted into the plurality of through holes 151a, and the lower surface 151b of the mounting plate 151 is in contact with the upper surface (contact surface) 141b of the support plate 141. Accordingly, the placing plate 151 is cooled by the cooling portion 143 via the support plate 141. The light projecting section 160 includes a cover 161 having a lower opening and an internal space, a light transmitting plate 162, a planar light source section 163, and a power supply device 164. In this embodiment, the light transmitting plate 162 is a quartz glass plate. As the material of the light-transmitting plate 162, another material that transmits the vacuum ultraviolet rays described below may be used. As described above, the cover 161 is disposed on the upper portion of the casing 121 so as to close the opening of the upper portion of the casing 121. The light-transmitting plate 162 is mounted on the cover 161 so as to close the opening of the lower portion of the cover 161. The internal space of the housing 121 and the internal space of the outer cover 161 are optically partitioned by a light transmitting plate 162. The light source section 163 and the power supply device 164 are housed in a cover 161. In this embodiment, the light source unit 163 is configured by horizontally arranging a plurality of rod-shaped light sources of vacuum ultraviolet light having an emission wavelength of about 120 nm or more and about 230 nm or less at specific intervals. Each light source may be, for example, a xenon excimer lamp, or another excimer lamp or a deuterium lamp. The light source unit 163 emits vacuum ultraviolet rays having a substantially uniform light amount distribution into the housing 121 through the light transmitting plate 162. The area of the exit surface of the vacuum ultraviolet rays of the light source portion 163 is larger than the area of the processed surface of the substrate W. The power supply device 164 supplies power to the light source section 163. The replacement unit 170 includes pipes 171p, 172p, and 173p, valves 171v and 172v, and a suction device 173. The pipes 171p and 172p are connected between the air supply port of the housing 121 and the inert gas supply source. In this embodiment, the inert gas is, for example, nitrogen. Valves 171v and 172v are inserted into the pipes 171p and 172p. An inert gas is supplied into the casing 121 from the side of the support plate 141 through a pipe 171p. An inert gas is supplied into the casing 121 from below the support plate 141 through a pipe 172p. The flow rate of the inert gas is adjusted by the valves 171v and 172v. In this embodiment, nitrogen is used as the inert gas. The pipe 173p is branched into a branch pipe 173a and a branch pipe 173b. The branch pipe 173a is connected to the exhaust port of the casing 121, and the end of the branch pipe 173b is disposed between the casing 121 and the baffle 131. A suction device 173 is inserted into the pipe 173p. A valve 173v is inserted into the branch pipe 173b. The suction device 173 is, for example, an ejector. The piping 173p is connected to an exhaust system. The suction device 173 exhausts the gas in the casing 121 through the branch pipe 173a and the pipe 173p. In addition, the suction device 173 exhausts the gas between the casing 121 and the baffle plate 131 and the dust generated by the movement of the baffle plate 131 through the branch pipe 173b and the pipe 173p. The gas system exhausted by the suction device 173 is rendered harmless by the exhaust device. The measurement unit 180 includes an oxygen concentration meter 181, an ozone concentration meter 182, and an illuminance meter 183. The oxygen concentration meter 181, the ozone concentration meter 182, and the illuminance meter 183 are connected to the control unit 110 through connection ports p1, p2, and p3 provided in the housing 121, respectively. The oxygen concentration meter 181 is, for example, a Jafani battery type oxygen sensor or a zirconia type oxygen sensor, and measures the oxygen concentration in the case 121. The ozone concentration meter 182 measures the ozone concentration in the casing 121. The illuminance meter 183 includes a light-receiving element such as a photodiode, and measures the illuminance of vacuum ultraviolet rays from the light source unit 163 that is irradiated to the light-receiving surface of the light-receiving element. Here, the illuminance refers to the power of vacuum ultraviolet rays per unit area irradiated to the light receiving surface. The unit of the illuminance is, for example, "W / m 2 ". (2) Outline Operation of Exposure Device In the exposure device 100, the substrate W is irradiated with vacuum ultraviolet rays from the light source unit 163 to perform exposure processing. However, when the oxygen concentration in the case 121 is high, the oxygen molecules absorb vacuum ultraviolet rays and are separated into oxygen atoms, and the separated oxygen atoms are recombined with other oxygen molecules to generate ozone. In this case, the vacuum ultraviolet rays reaching the substrate W are attenuated. Compared with the attenuation of ultraviolet rays with a longer wavelength of about 230 nm, the attenuation of vacuum ultraviolet rays is greater. Therefore, in the exposure process, the gas in the casing 121 is replaced with an inert gas by the replacement unit 170. This reduces the oxygen concentration in the casing 121. When the oxygen concentration measured by the oxygen concentration meter 181 decreases to a predetermined concentration, the substrate W is irradiated with vacuum ultraviolet rays from the light source section 163. Here, the predetermined concentration is preferably an oxygen concentration (for example, 1%) that does not generate ozone due to the vacuum ultraviolet rays emitted from the light source section 163. When the exposure amount of the vacuum ultraviolet ray irradiated to the substrate W reaches a predetermined exposure amount set in advance, the irradiation of the vacuum ultraviolet ray is stopped, and the exposure process ends. Here, the exposure amount refers to the energy of vacuum ultraviolet rays per unit area which is irradiated onto the processed surface of the substrate W during the exposure processing. The unit of the exposure amount is, for example, "J / m 2 ". Therefore, the exposure amount of the vacuum ultraviolet ray is obtained by accumulating the illuminance of the vacuum ultraviolet ray measured by the illuminance meter 183. In the above-mentioned exposure process, the substrate W is heated by irradiating the substrate W with vacuum ultraviolet rays. In this case, if the temperature of the substrate W rises to a specific temperature (for example, 50 degrees or more), the substrate W cannot be carried out from the exposure device, and it is necessary to wait until the temperature of the substrate W decreases to a specific temperature. Therefore, the efficiency of the exposure process of the substrate W is reduced. In this embodiment, the placing plate 151 is moved to a standby position before being exposed to the exposure, and is brought into contact with the support plate 141 to be cooled in advance. During the exposure process, the substrate W is placed on the placing plate 151. Thereafter, the mounting plate 151 is moved to a processing position, and the substrate W is irradiated with vacuum ultraviolet rays while the substrate W is close to the light source portion 163. In this case, since the substrate W is placed on the cooled mounting plate 151, the temperature of the substrate W is prevented from rising above a specific temperature. This prevents the efficiency of the exposure process of the substrate W from being lowered. (3) Control section FIG. 3 is a functional block diagram showing the configuration of the control section 110 of FIG. 1. As shown in FIG. 3, the control section 110 includes a closed control section 1, a lift control section 2, an exhaust control section 3, an air supply control section 4, a concentration acquisition section 5, a concentration comparison section 6, an illuminance acquisition section 7, and an exposure amount calculation. Section 8, exposure amount comparison section 9, and light emission control section 10. The control unit 110 includes, for example, a CPU (Central Processing Unit) and a memory. A control program is stored in the memory of the control unit 110 in advance. By causing the CPU of the control section 110 to execute the control program stored in the memory, the functions of the sections of the control section 110 are realized. Based on the detection results of the position sensors 133a and 133b in FIG. 1, the closing control unit 1 controls the driving device 133 to move the shutter 131 between the closed position and the open position. The lift control unit 2 controls the driving device 153 so as to move the mounting plate 151 between the standby position and the processing position based on the detection results of the position sensors 153a and 153b in FIG. 1. The exhaust control unit 3 controls the suction device 173 and the valve 173v so as to exhaust the gas in the casing 121 and the gas between the casing 121 and the baffle 131 in FIG. 1. The gas supply control unit 4 controls the valves 171v and 172v of FIG. 1 so as to supply an inert gas into the housing 121. The concentration acquisition unit 5 acquires the value of the oxygen concentration measured by the oxygen concentration meter 181 in FIG. 1. The concentration comparison unit 6 compares the oxygen concentration measured by the concentration acquisition unit 5 with a predetermined concentration. The illuminance acquisition unit 7 acquires the value of the illuminance of the vacuum ultraviolet ray measured by the illuminance meter 183 in FIG. 1. The exposure amount calculation section 8 calculates the exposure amount of the vacuum ultraviolet rays irradiated to the substrate W based on the illuminance of the vacuum ultraviolet rays obtained by the illuminance acquisition section 7 and the irradiation time of the vacuum ultraviolet rays to the substrate W from the light source section 163 in FIG. 1. The exposure amount comparison unit 9 compares the exposure amount calculated by the exposure amount calculation unit 8 with a preset exposure amount. The light projection control unit 10 controls the supply of electric power from the power supply device 164 to the light source unit 163 in a manner that the light source unit 163 emits vacuum ultraviolet rays based on the comparison result obtained by the concentration comparison unit 6. In addition, the light projection control unit 10 controls the power source device 164 so that the light source unit 163 stops the emission of the vacuum ultraviolet rays based on the comparison result obtained by the exposure amount comparison unit 9. (4) Exposure Processing FIGS. 4 to 7 are schematic diagrams for explaining the operation of the exposure apparatus 100. In FIGS. 4 to 7, in order to facilitate understanding of the structure inside the casing 121 and the cover 161, the illustration of some constituent elements is omitted, and the outlines of the casing 121 and the cover 161 are shown by a single-dot chain line. 8 and 9 are flowcharts showing an example of exposure processing performed by the control unit 110 of FIG. 3. Hereinafter, the exposure processing performed by the control unit 110 will be described with reference to FIGS. 4 to 7. As shown in FIG. 4, in the initial state of the exposure process, the shutter 131 is located at the closed position, and the mounting plate 151 is located at the standby position. Therefore, the lower surface 151b of the mounting plate 151 is in contact with the upper surface 141b of the support plate 141. Thereby, the mounting plate 151 is cooled in advance by the cooling plate 143a via the support plate 141. The oxygen concentration in the casing 121 is continuously or periodically measured by the oxygen concentration meter 181 and is acquired by the concentration acquisition unit 5. At this point, the oxygen concentration in the casing 121 measured by the oxygen concentration meter 181 is equal to the oxygen concentration in the atmosphere. First, as shown in FIG. 5, the closing control part 1 moves the shutter 131 to an open position (step S1). Thereby, the substrate W to be processed is placed on the upper end 142a of the plurality of support pins 142 through the transfer opening 121a. In this example, the substrate W is placed on the upper end 142 a of the plurality of support pins 142 by the transfer device 220 of FIG. 10 described below. Next, the elevation control unit 2 determines whether or not the substrate W has been placed on the upper end 142a of the plurality of support pins 142 (step S2). When the substrate W is not placed, the lift control unit 2 stands by until the substrate W is placed on the upper end 142 a of the plurality of support pins 142. When the substrate W is placed, as shown in FIG. 6, the lift control unit 2 moves the shutter 131 to the closed position (step S3). Then, the exhaust control unit 3 exhausts the gas in the casing 121 by the suction device 173 in FIG. 1 (step S4). The gas supply control unit 4 supplies an inert gas into the housing 121 through the pipes 171p and 172p in FIG. 1 (step S5). The processing of steps S4 and S5 may be started either first or at the same time. Thereafter, the concentration comparison unit 6 determines whether the oxygen concentration in the casing 121 has been reduced to a specific concentration (step S6). When the oxygen concentration has not decreased to a specific concentration, the concentration comparison unit 6 waits until the oxygen concentration decreases to a specific concentration. When the oxygen concentration has been reduced to a specific concentration, the light emission control unit 10 emits vacuum ultraviolet rays through the light source unit 163 (step S7). Next, as shown in FIG. 7, the raising / lowering control part 2 moves the mounting board 151 to a processing position (step S8). Thereby, the substrate W is transferred to the mounting plate 151 from the plurality of support pins 142. In this case, the substrate W approaches the light-transmitting plate 162 while being cooled by the mounting plate 151. In this state, the substrate W is irradiated with vacuum ultraviolet rays from the light source section 163 through the light-transmitting plate 162 to expose the DSA film formed on the surface to be processed. Here, the illuminance acquisition unit 7 starts the illuminance meter 183 to measure the illuminance of vacuum ultraviolet rays, and acquires the measured illuminance from the illuminance meter 183 (step S9). The exposure amount calculation unit 8 calculates the exposure amount of the vacuum ultraviolet rays irradiated to the substrate W by accumulating the illuminance of the vacuum ultraviolet rays acquired by the illuminance acquisition unit 7 (step S10). Next, the exposure amount comparison section 9 determines whether the exposure amount calculated by the exposure amount calculation section 8 has reached the set exposure amount (step S11). When the exposure amount does not reach the set exposure amount, the exposure amount comparison section 9 waits until the exposure amount reaches the set exposure amount. When the exposure amount reaches the set exposure amount, as shown in FIG. 6, the elevation control unit 2 moves the placing plate 151 to the standby position (step S12). Thereby, the substrate W is transferred from the mounting plate 151 to the plurality of support pins 142. The lower surface 151b of the mounting plate 151 is in contact with the upper surface 141b of the support plate 141. Thereby, the mounting plate 151 is cooled in advance by the cooling pipe 143 a to prepare for the next exposure process of the substrate W carried into the exposure apparatus 100. Next, the light emission control unit 10 stops the emission of the vacuum ultraviolet rays from the light source unit 163 (step S13). The illuminance acquisition unit 7 stops the measurement of the illuminance by the illuminance meter 183 (step S14). Then, the exhaust control unit 3 stops the exhaust of the gas in the casing 121 by the suction device 173 (step S15). The gas supply control unit 4 stops the supply of the inert gas from the pipes 171p and 172p to the case 121 (step S16). The processing of steps S13 to S16 may be started either first or at the same time. Thereafter, as shown in FIG. 5, the closing control unit 1 moves the shutter 131 to the open position (step S17). Thereby, the exposed substrate W can be carried out from the plurality of supporting pins 142 to the outside of the housing 121 through the carrying opening 121 a. In this example, the substrate W is carried out from the plurality of support pins 142 to the outside of the housing 121 by the transfer device 220 of FIG. 10 described below. Next, the closing control unit 1 determines whether or not the substrate W has been carried out from the plurality of support pins 142 (step S18). When the substrate W is not carried out, the closed control unit 1 waits until the substrate W is carried out from the plurality of support pins 142. When the substrate W has been carried out, as shown in FIG. 4, the closing control unit 1 moves the shutter 131 to the closed position (step S19), and ends the exposure processing. By repeatedly performing the above operations, the plurality of substrates W can be sequentially exposed. In the above-mentioned exposure processing, after the emission of vacuum ultraviolet rays by the light source unit 163 is started, the placing plate 151 is moved from the standby position to the processing position. Before stopping the emission of vacuum ultraviolet rays by the light source section 163, the mounting plate 151 is moved from the processing position to the standby position. Thereby, the mounting plate 151 can be sufficiently cooled by the cooling pipe 143a in the standby position. On the other hand, when the mounting plate 151 can be sufficiently cooled, the mounting plate 151 may be moved from the standby position to the processing position before starting to emit vacuum ultraviolet rays through the light source unit 163. Alternatively, the mounting plate 151 may be moved from the processing position to the standby position after the emission of the vacuum ultraviolet rays by the light source unit 163 is stopped. That is, the processing of step S8 may be performed before the processing of step S7, and the processing of step S12 may also be performed after the processing of step S13. (5) Substrate processing apparatus FIG. 10 is a schematic block diagram showing the overall configuration of a substrate processing apparatus including the exposure apparatus 100 of FIG. 1. In the substrate processing apparatus 200 described below, a process using a directed self-assembly (DSA) of a block copolymer is performed. Specifically, a processing liquid containing an oriented self-assembling material is coated on the processed surface of the substrate W. Thereafter, a pattern of two polymers is formed on the treated surface of the substrate W by the micro-phase separation generated by the oriented self-assembly material. The pattern of one of the two polymers was removed by a solvent. A processing solution containing a directional self-assembling material is referred to as a DSA solution. The process of removing one of the two polymer patterns formed on the treated surface of the substrate W by microphase separation is called a developing process, and the solvent used for the developing process is called a developing solution. As shown in FIG. 10, the substrate processing apparatus 200 includes, in addition to the exposure apparatus 100, a control device 210, a conveying device 220, a heat treatment device 230, a coating device 240, and a developing device 250. The control device 210 includes, for example, a CPU and a memory, or a microcomputer, and controls operations of the conveying device 220, the heat treatment device 230, the coating device 240, and the developing device 250. In addition, the control device 210 gives a command to the control unit 110 to control the operations of the closed portion 130, the elevation portion 150, the light projection portion 160, and the replacement portion 170 of the exposure device 100 of FIG. The transfer device 220 transfers the substrate W between the exposure device 100, the heat treatment device 230, the coating device 240, and the developing device 250 while holding the substrate W to be processed. The heat treatment device 230 performs heat treatment on the substrate W before and after the coating treatment by the coating device 240 and the development treatment by the developing device 250. The coating device 240 performs a film coating process by supplying a DSA liquid to the processing surface of the substrate W. In this embodiment, as the DSA solution, a block copolymer containing two types of polymers is used. Examples of the combination of the two polymers include polystyrene-polymethyl methacrylate (PS-PMMA), polystyrene-polydimethylsiloxane (PS-PDMS), and polystyrene-polydimethacrylate. Ferrocene dimethylsiloxane (PS-PFS), polystyrene-polyethylene oxide (PS-PEO), polystyrene-polyvinylpyridine (PS-PVP), polystyrene-polyhydroxybenzene Ethylene (PS-PHOST), and polymethylmethacrylate-polymethacrylate polyhedral oligomeric polysilsesquioxane (PMA-PMAPOSS). The developing device 250 supplies a developing solution to the processed surface of the substrate W to perform a film developing process. Examples of the solvent of the developing solution include toluene, heptane, acetone, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, acetic acid, tetrahydrofuran, isopropyl alcohol (IPA), or Tetramethylammonium hydroxide (TMAH) and the like. FIG. 11 is a schematic diagram showing an example of the processing of the substrate W by the substrate processing apparatus 200 of FIG. 10. In FIG. 11, the state of the board | substrate W which changes with each process is shown by sectional drawing. In this example, as an initial state before the substrate W is carried into the substrate processing apparatus 200, as shown in FIG. 11 (a), a base layer L1 is formed so as to cover the processed surface of the substrate W, and is formed on the base layer L1. There is, for example, a guide pattern L2 including a photoresist. The operation of the substrate processing apparatus 200 will be described below with reference to FIGS. 10 and 11. The transfer device 220 sequentially transfers the substrate W to be processed to the heat treatment device 230 and the coating device 240. In this case, in the heat treatment apparatus 230, the temperature of the substrate W is adjusted to a temperature suitable for forming a DSA film. In the coating device 240, a DSA liquid is supplied to the processing surface of the substrate W, and a coating process is performed. As a result, as shown in FIG. 11 (b), a DSA film L3 including two polymers is formed in a region on the base layer L1 where the guide pattern L2 is not formed. Next, the transfer device 220 sequentially transfers the substrate W on which the DSA film L3 is formed to the heat treatment device 230 and the exposure device 100. In this case, micro-phase separation occurs in the DSA film L3 due to the heat treatment of the substrate W in the heat treatment device 230. Thereby, as shown in FIG. 11 (c), a pattern Q1 including one polymer and a pattern Q2 including another polymer are formed. In this example, a linear pattern Q1 and a linear pattern Q2 are formed directionally along the guide pattern L2. Thereafter, the substrate W is cooled in the heat treatment apparatus 230. Further, in the exposure apparatus 100, the entire DSA film L3 after the microphase separation is irradiated with vacuum ultraviolet rays for modifying the DSA film L3 to perform an exposure process. Thereby, the bond between one polymer and another polymer is cut off, so that the pattern Q1 and the pattern Q2 are separated. Then, the transfer device 220 sequentially transfers the substrate W that has been subjected to the exposure processing by the exposure device 100 to the heat treatment device 230 and the developing device 250. In this case, the substrate W is cooled in the heat treatment apparatus 230. In the developing device 250, a developing solution is supplied to the DSA film L3 on the substrate W, and development processing is performed. Thereby, as shown in FIG. 11 (d), the pattern Q1 is removed, and finally the pattern Q2 remains on the substrate W. Finally, the transfer device 220 recovers the substrate W after the development process from the developing device 250. (6) Effect In the exposure apparatus 100 of this embodiment, the mounting plate 151 is positioned at the standby position when the substrate W is carried into the processing chamber 120, and the mounting plate 151 is moved to the standby position by the driving device 153. . In this state, the placing plate 151 is in contact with the supporting plate 141, and the placing plate 151 is cooled by the cooling pipe 143a through the supporting plate 141. Thereafter, by moving the mounting plate 151 upward, the substrate W is transferred from the upper end 142 a of the plurality of support pins 142 to the mounting plate 151 to be placed on the mounting plate 151. When the substrate W is irradiated with vacuum ultraviolet rays by the light source section 163, the mounting plate 151 is positioned at a processing position higher than the upper end 142a of the plurality of support pins 142, which are the transfer positions of the substrate W, by the driving device 153 The mounting plate 151 moves to a processing position. When the mounting plate 151 is located at the standby position when the substrate W is carried out of the processing chamber 120, the mounting plate 151 is moved to the standby position by the driving device 153. Thereby, the substrate W is handed over from the mounting plate 151 to the plurality of support pins 142 to support the upper end 142 a of the plurality of support pins 142. According to this configuration, the substrate W and the light source unit 163 can be easily carried into the processing chamber 120 without the substrate W interfering with each other, or the substrate W can be easily carried out of the processing chamber 120. In addition, when the substrate W is irradiated with vacuum ultraviolet rays by the light source section 163, the substrate W can be easily approached to the light source section 163 with the substrate W placed on the mounting plate 151. Here, since the mounting plate 151 is cooled in advance by the cooling pipe 143a, even when the substrate W is irradiated with vacuum ultraviolet rays by the light source section 163, the temperature of the substrate W does not rise above a specific temperature. Therefore, it is not necessary to make the substrate W stand by in the processing chamber 120, and it is not necessary to separately perform a process for cooling the substrate W. In addition, the cooling of the mounting plate 151 by the cooling pipe 143a is performed in synchronization with the processing of transferring the substrate W into the processing chamber 120 and the processing of removing the substrate W from the processing chamber 120, and is performed in the processing chamber 120 where there is no substrate W During. Therefore, it is not necessary to separately secure a time for cooling the mounting plate 151 by the cooling pipe 143a. As a result, the efficiency of the exposure process of the substrate W can be improved. Furthermore, in the above-mentioned embodiment, the mounting plate 151 is indirectly cooled by the cooling plate 143a via the support plate 141, so that it is not necessary to install the cooling tube 143a on the mounting plate 151. Therefore, it is not necessary to connect the medium supply source 143b to the cooling portion 143 on the mounting plate 151. This can simplify the configuration for moving the mounting plate 151 between the standby position and the processing position. In addition, the lower surface 151b of the mounting plate 151 and the upper surface 141b of the support plate 141 are thermally moved from the mounting plate 151 to the support plate 141 through a wide range of contact, so that the mounting plate 151 can be highly efficient. Ground to cool. (7) Other Embodiments (a) In the above embodiment, the cooling unit 143 includes the cooling pipe 143a and the medium supply source 143b, but the present invention is not limited to this. FIG. 12 is a plan view showing a support plate 141 in another embodiment. As shown in FIG. 12, in another embodiment, the cooling unit 143 includes a plurality of (eight in the example of FIG. 12) cooling elements 143 c and a power supply source 143 d. Each cooling element 143c is, for example, a Peltier element having a cooling surface and a heating surface. The plurality of cooling elements 143c are arranged at substantially regular intervals so as to surround the opening portion 141a in a state where the cooling surface is in contact with the support plate 141. Each cooling element 143c is connected to a power supply source 143d. In FIG. 12, only one cooling element 143c is connected to the power supply source 143d, and the connection between the plurality of cooling elements 143c and the power supply source 143d is omitted. Each cooling element 143c is supplied with power from the power supply source 143d, and the support plate 141 is cooled. (b) In the above embodiment, the cooling plate 143a is provided on the support plate 141, and the placing plate 151 is indirectly cooled by the cooling plate 143a through the support plate 141, but the present invention is not limited thereto. A cooling pipe 143a may be provided on the mounting plate 151, so that the mounting plate 151 may be directly cooled by the cooling pipe 143a. Similarly, a cooling element 143c of FIG. 12 may be provided on the mounting plate 151, so that the mounting plate 151 may be directly cooled by the cooling element 143c. In such cases, the mounting plate 151 may be continuously cooled. (c) In the above embodiment, DSA liquid was used as the processing liquid, but the present invention is not limited to this. It is also possible to use other treatment liquids different from DSA liquid. (d) In the above embodiment, the exit surface of the vacuum ultraviolet light is larger than the treated surface of the substrate W, and the entire surface of the substrate W is exposed, but the present invention is not limited to this. The emitting surface of the vacuum ultraviolet light may be smaller than the processed surface of the substrate W, and may also emit the vacuum ultraviolet light having no planar cross section and having a linear cross section. In this case, the entire surface to be processed of the substrate W is irradiated with vacuum ultraviolet by moving the exit surface of the vacuum ultraviolet to the processed surface of the substrate W relatively. (e) In the above embodiment, an inert gas is supplied into the housing 121 during the exposure process, but the present invention is not limited to this. When the oxygen concentration in the casing 121 can be sufficiently reduced during the exposure process, the inert gas may not be supplied into the casing 121. (8) Correspondence between the various constituent elements of the patent application scope and the various embodiments of the embodiment The following describes examples of the correspondence between the constituent elements of the patent application scope and the various embodiments of the embodiment, but the present invention is not limited to the following Examples. As each constituent element of the scope of patent application, various other constituent elements having the structure or function described in the scope of patent application may be used. In the above embodiment, the substrate W is an example of a substrate, the processing chamber 120 is an example of a processing chamber, the mounting plate 151 is an example of a mounting portion, the light source portion 163 is an example of a light source portion, and the driving device 153 is an example of a driving portion. The cooling section 143 is an example of a cooling section. The exposure device 100 is an example of an exposure device, the support plate 141 is an example of a contact member, the lower surface 151b is an example of a lower surface, the upper surface 141b is an example of a contact surface, the support pin 142 is an example of a support member, and the upper end 142a is an upper end. example. The through hole 151a is an example of a through hole, the coating device 240 is an example of a coating processing section, the heat treatment device 230 is an example of a thermal processing section, the developing device 250 is an example of a developing processing section, and the substrate processing device 200 is an example of a substrate processing device. .

1‧‧‧封閉控制部1‧‧‧ closed control department

2‧‧‧升降控制部2‧‧‧ Lifting Control Department

3‧‧‧排氣控制部3‧‧‧Exhaust Control Department

4‧‧‧供氣控制部4‧‧‧Air Supply Control Department

5‧‧‧濃度獲取部5‧‧‧Concentration Acquisition Department

6‧‧‧濃度比較部6‧‧‧Concentration Comparison Department

7‧‧‧照度獲取部7‧‧‧Illuminance Acquisition Department

8‧‧‧曝光量計算部8‧‧‧Exposure Calculation Department

9‧‧‧曝光量比較部9‧‧‧Exposure Comparison Section

10‧‧‧投光控制部10‧‧‧lighting control department

100‧‧‧曝光裝置100‧‧‧ exposure device

110‧‧‧控制部110‧‧‧Control Department

120‧‧‧處理室120‧‧‧Processing Room

121‧‧‧殼體121‧‧‧shell

121a‧‧‧搬送開口121a‧‧‧Transport opening

121b‧‧‧開口部121b‧‧‧ opening

122‧‧‧環狀構件122‧‧‧ Ring member

123‧‧‧被覆構件123‧‧‧ Covered member

130‧‧‧封閉部130‧‧‧Closed

131‧‧‧擋板131‧‧‧ bezel

131a‧‧‧密封構件131a‧‧‧sealing member

132‧‧‧連結構件132‧‧‧Connecting members

133‧‧‧驅動裝置133‧‧‧Drive

133a‧‧‧位置感測器133a‧‧‧Position sensor

133b‧‧‧位置感測器133b‧‧‧Position sensor

140‧‧‧交接部140‧‧‧Transfer Department

141‧‧‧支持板141‧‧‧Support board

141a‧‧‧開口部141a‧‧‧ opening

141b‧‧‧上表面(接觸面)141b‧‧‧upper surface (contact surface)

142‧‧‧支持銷142‧‧‧Support

142a‧‧‧上端142a‧‧‧Top

143‧‧‧冷卻部 143‧‧‧Cooling Department

143a‧‧‧冷卻管143a‧‧‧cooling pipe

143b‧‧‧介質供給源143b‧‧‧ media supply source

143c‧‧‧冷卻元件143c‧‧‧cooling element

143d‧‧‧電力供給源143d‧‧‧ Electricity supply source

150‧‧‧升降部150‧‧‧ Lifting Department

151‧‧‧載置板151‧‧‧mounting plate

151a‧‧‧貫通孔151a‧‧‧through hole

151b‧‧‧下表面151b‧‧‧ lower surface

152‧‧‧連結構件152‧‧‧Connecting members

153‧‧‧驅動裝置153‧‧‧Drive

153a‧‧‧位置感測器153a‧‧‧Position sensor

153b‧‧‧位置感測器153b‧‧‧Position sensor

160‧‧‧投光部160‧‧‧light projection department

161‧‧‧外罩161‧‧‧Cover

162‧‧‧透光板162‧‧‧Transparent board

163‧‧‧光源部163‧‧‧Light source department

164‧‧‧電源裝置164‧‧‧Power supply unit

170‧‧‧置換部170‧‧‧ Replacement Department

171p‧‧‧配管171p‧‧‧Piping

171v‧‧‧閥171v‧‧‧ valve

172p‧‧‧配管172p‧‧‧Piping

172v‧‧‧閥172v‧‧‧ valve

173‧‧‧抽吸裝置173‧‧‧Suction device

173a‧‧‧分支管173a‧‧‧ branch pipe

173b‧‧‧分支管173b‧‧‧ branch pipe

173p‧‧‧配管173p‧‧‧Piping

173v‧‧‧閥173v‧‧‧ valve

180‧‧‧計測部180‧‧‧Measurement Department

181‧‧‧氧濃度計181‧‧‧ oxygen concentration meter

182‧‧‧臭氧濃度計182‧‧‧ ozone concentration meter

183‧‧‧照度計183‧‧‧illuminance meter

210‧‧‧控制裝置210‧‧‧Control device

220‧‧‧搬送裝置220‧‧‧ transfer device

230‧‧‧熱處理裝置230‧‧‧ heat treatment equipment

240‧‧‧塗佈裝置240‧‧‧ coating device

250‧‧‧顯影裝置250‧‧‧Developing device

L1‧‧‧基底層L1‧‧‧ basal layer

L2‧‧‧導引圖案L2‧‧‧Guide pattern

L3‧‧‧DSA膜L3‧‧‧DSA film

Q1‧‧‧圖案Q1‧‧‧ pattern

Q2‧‧‧圖案Q2‧‧‧ pattern

W‧‧‧基板W‧‧‧ substrate

p1‧‧‧連接埠口p1‧‧‧port

p2‧‧‧連接埠口p2‧‧‧Port

p3‧‧‧連接埠口p3‧‧‧Port

s1‧‧‧密封構件s1‧‧‧sealing member

s2‧‧‧密封構件s2‧‧‧sealing member

s3‧‧‧密封構件s3‧‧‧sealing member

圖1係表示本發明之實施形態之曝光裝置之構成的模式性剖視圖。 圖2係表示交接部之支持板之俯視圖。 圖3係表示圖1之控制部之構成之功能方塊圖。 圖4係用以對曝光裝置之動作進行說明之模式圖。 圖5係用以對曝光裝置之動作進行說明之模式圖。 圖6係用以對曝光裝置之動作進行說明之模式圖。 圖7係用以對曝光裝置之動作進行說明之模式圖。 圖8係表示藉由圖3之控制部所進行之曝光處理之一例的流程圖。 圖9係表示藉由圖3之控制部所進行之曝光處理之一例的流程圖。 圖10係表示包含圖1之曝光裝置之基板處理裝置之整體構成的模式性方塊圖。 圖11(a)~(d)係表示利用圖10之基板處理裝置進行之基板之處理之一例的模式圖。 圖12係表示另一實施形態中之支持板之俯視圖。FIG. 1 is a schematic cross-sectional view showing the structure of an exposure apparatus according to an embodiment of the present invention. Fig. 2 is a plan view showing a support plate of the transfer portion. FIG. 3 is a functional block diagram showing the configuration of the control section of FIG. 1. FIG. FIG. 4 is a schematic diagram for explaining the operation of the exposure device. FIG. 5 is a schematic diagram for explaining the operation of the exposure device. FIG. 6 is a schematic diagram for explaining the operation of the exposure device. FIG. 7 is a schematic diagram for explaining the operation of the exposure device. FIG. 8 is a flowchart showing an example of exposure processing performed by the control unit in FIG. 3. FIG. 9 is a flowchart showing an example of exposure processing performed by the control unit in FIG. 3. FIG. 10 is a schematic block diagram showing the overall configuration of a substrate processing apparatus including the exposure apparatus of FIG. 1. 11 (a) to (d) are schematic diagrams showing an example of processing of a substrate by the substrate processing apparatus of FIG. Fig. 12 is a plan view showing a supporting plate in another embodiment.

Claims (15)

一種曝光裝置,其包括:處理室,其收容基板;載置部,其於上述處理室內載置基板;排氣部,其將上述處理室內之氣體排出;光源部,其出射真空紫外線;驅動部,其以當向上述處理室內搬入基板及向上述處理室外搬出基板時,上述載置部位於上述處理室內之第1位置,且當利用上述光源部對基板照射真空紫外線時,上述載置部位於較上述第1位置更靠近上述光源部之第2位置之方式,使上述載置部移動至上述第1位置與上述第2位置;冷卻部,其於上述載置部至少位於上述第1位置時對上述載置部進行冷卻,且位於上述第2位置時對上述載置部不進行冷卻;接觸構件,其於上述第1位置處與上述載置部接觸;及複數個支持構件,其自上述接觸構件向上方延伸,上述複數個支持構件於上述載置部位於上述第1位置時支持基板,上述冷卻部係以對上述接觸構件進行冷卻之方式設置於上述接觸構件。An exposure device includes: a processing chamber that houses a substrate; a mounting section that mounts a substrate in the processing chamber; an exhaust section that exhausts the gas in the processing chamber; a light source section that emits vacuum ultraviolet rays; a driving section When the substrate is loaded into the processing chamber and the substrate is discharged from the processing chamber, the mounting portion is located at the first position in the processing chamber, and when the substrate is irradiated with vacuum ultraviolet rays by the light source portion, the mounting portion is located at In a manner closer to the second position of the light source section than the first position, the placement section is moved to the first position and the second position; and the cooling section is located when the placement section is at least the first position. Cooling the mounting portion and not cooling the mounting portion when the second portion is located; a contact member that is in contact with the mounting portion at the first position; and a plurality of supporting members from the above The contact member extends upward, and the plurality of support members support the substrate when the placing portion is located at the first position, and the cooling portion is provided to the contact member. Line mode of cooling is provided to the contact member. 如請求項1之曝光裝置,其中上述載置部具有下表面,且上述接觸構件具有於上述載置部之冷卻時與上述載置部之下表面接觸之接觸面。The exposure device according to claim 1, wherein the mounting portion has a lower surface, and the contact member has a contact surface that contacts a lower surface of the mounting portion when the mounting portion is cooled. 如請求項1或2之曝光裝置,其中上述光源部係配置於上述載置部之上方,向下方出射真空紫外線,上述第2位置係位於上述光源部之下方,上述第1位置係位於上述第2位置之下方,且上述驅動部使上述載置部於上述第1位置與上述第2位置之間升降。For the exposure device of claim 1 or 2, wherein the light source unit is disposed above the mounting unit and emits vacuum ultraviolet rays downward, the second position is below the light source unit, and the first position is located in the Below the 2 position, and the driving section raises and lowers the placing section between the first position and the second position. 如請求項3之曝光裝置,其中上述冷卻部係配置於上述載置部之下方,且當上述載置部位於上述第1位置時與上述載置部接觸。The exposure device according to claim 3, wherein the cooling section is disposed below the mounting section, and is in contact with the mounting section when the mounting section is located at the first position. 如請求項4之曝光裝置,其中,上述複數個支持構件之上端高於上述第1位置且低於上述第2位置,上述載置部具有上述複數個支持構件可通過之複數個貫通孔,且上述複數個支持構件於上述載置部位於上述第1位置時貫通上述載置部之上述複數個貫通孔。As for the exposure device of claim 4, wherein the upper end of the plurality of supporting members is higher than the first position and lower than the second position, the mounting portion has a plurality of through holes through which the plurality of supporting members can pass, and The plurality of support members penetrate the plurality of through holes of the mounting portion when the mounting portion is located at the first position. 一種曝光裝置,其包括:處理室,其收容基板;載置部,其於上述處理室內載置基板;排氣部,其將上述處理室內之氣體排出;光源部,其出射真空紫外線;驅動部,其以當向上述處理室內搬入基板及向上述處理室外搬出基板時,上述載置部位於上述處理室內之第1位置,且當利用上述光源部對基板照射真空紫外線時,上述載置部位於較上述第1位置更靠近上述光源部之第2位置之方式,使上述載置部移動至上述第1位置與上述第2位置;冷卻部,其以對上述載置部進行冷卻的方式設置於上述載置部;接觸構件,其於上述第1位置處與上述載置部接觸;及複數個支持構件,其自上述接觸構件向上方延伸,上述複數個支持構件於上述載置部位於上述第1位置時支持基板。An exposure device includes: a processing chamber that houses a substrate; a mounting section that mounts a substrate in the processing chamber; an exhaust section that exhausts the gas in the processing chamber; a light source section that emits vacuum ultraviolet rays; a driving section When the substrate is loaded into the processing chamber and the substrate is discharged from the processing chamber, the mounting portion is located at the first position in the processing chamber, and when the substrate is irradiated with vacuum ultraviolet rays by the light source portion, the mounting portion is located at In a manner closer to the second position of the light source section than the first position, the mounting section is moved to the first position and the second position; and a cooling section is provided to cool the mounting section. The mounting portion; a contact member in contact with the mounting portion at the first position; and a plurality of support members extending upward from the contact member, the plurality of support members being located in the mounting portion at the first portion Supports substrate in 1 position. 如請求項1、2或6之曝光裝置,其中上述驅動部於開始藉由上述光源部出射真空紫外線後,使上述載置部自上述第1位置移動至上述第2位置。For example, the exposure device according to claim 1, 2 or 6, wherein the driving unit moves the mounting unit from the first position to the second position after starting to emit vacuum ultraviolet rays through the light source unit. 如請求項1、2或6之曝光裝置,其中上述驅動部於停止藉由上述光源部出射真空紫外線前,使上述載置部自上述第2位置移動至上述第1位置。According to the exposure device of claim 1, 2 or 6, wherein the driving section moves the mounting section from the second position to the first position before stopping the emission of vacuum ultraviolet rays through the light source section. 如請求項1、2或6之曝光裝置,其中上述光源部係以出射具有面狀之截面之真空紫外線之方式構成。The exposure device according to claim 1, 2 or 6, wherein the light source unit is configured to emit vacuum ultraviolet rays having a planar cross section. 如請求項9之曝光裝置,其中上述光源部造成之真空紫外線之出射面積大於基板之面積。For example, the exposure device according to claim 9, wherein the emission area of the vacuum ultraviolet rays caused by the light source section is larger than the area of the substrate. 一種基板處理裝置,其包括:塗佈處理部,其藉由於基板塗佈處理液而於基板形成膜;熱處理部,其對已藉由上述塗佈處理部而形成有膜之基板進行熱處理;如請求項1、2或6之曝光裝置,其對已藉由上述熱處理部進行熱處理之基板進行曝光;及顯影處理部,其對已藉由上述曝光裝置進行曝光之基板供給溶劑,藉此對基板之膜進行顯影。A substrate processing apparatus includes: a coating processing section that forms a film on a substrate by applying a processing solution to the substrate; and a thermal processing section that heat-processes a substrate on which a film has been formed by the coating processing section; The exposure device of claim 1, 2 or 6, which exposes a substrate that has been heat-treated by the above-mentioned heat treatment section; and a development processing section that supplies a solvent to the substrate that has been exposed by the above-mentioned exposure device, thereby applying a solvent to the substrate. The film was developed. 如請求項11之基板處理裝置,其中上述處理液包含定向自組裝材料。The substrate processing apparatus according to claim 11, wherein the processing liquid includes a directional self-assembly material. 一種曝光方法,其包含如下步驟:於處理室收容基板;以當向上述處理室內搬入基板時,載置部位於上述處理室內之第1位置之方式,藉由驅動部使上述載置部移動至上述第1位置;當上述載置部至少位於上述第1位置時,藉由以對接觸構件進行冷卻之方式設置於上述接觸構件之冷卻部對上述載置部進行冷卻;當上述載置部位於上述第1位置時,藉由自上述接觸構件向上方延伸之複數個支持構件支持基板;於上述處理室內,將基板載置於上述載置部;將上述處理室內之氣體排出;不以上述冷卻部對上述載置部進行冷卻,而藉由光源部出射真空紫外線;以當利用上述光源部對基板照射真空紫外線時,上述載置部位於較上述第1位置更靠近上述光源部之第2位置之方式,藉由上述驅動部使上述載置部移動至上述第2位置;及以當向上述處理室外搬出基板時,上述載置部位於上述處理室內之第1位置之方式,藉由上述驅動部使上述載置部移動至上述第1位置。An exposure method includes the steps of: accommodating a substrate in a processing chamber; and when the substrate is carried into the processing chamber, the mounting portion is positioned at a first position in the processing chamber, and the driving portion moves the mounting portion to The first position; when the mounting portion is at least the first position, the mounting portion is cooled by a cooling portion provided on the contact member in a manner to cool the contact member; when the mounting portion is positioned In the first position, the substrate is supported by a plurality of supporting members extending upward from the contact member; the substrate is placed in the placing portion in the processing chamber; the gas in the processing chamber is discharged; the cooling is not performed by the above The cooling portion emits vacuum ultraviolet rays through the light source portion; when the substrate is irradiated with vacuum ultraviolet rays by the light source portion, the placing portion is located at a second position closer to the light source portion than the first position. In one aspect, the mounting section is moved to the second position by the driving section; and when the substrate is unloaded outside the processing room, In a mode in which the placement portion is located at the first position in the processing chamber, the placement portion is moved to the first position by the driving portion. 一種曝光方法,其包含如下步驟:於處理室收容基板;以當向上述處理室內搬入基板時,載置部位於上述處理室內之第1位置之方式,藉由驅動部使上述載置部移動至上述第1位置;藉由設置於上述載置部之冷卻部對上述載置部進行冷卻;藉由於上述載置部位於上述第1位置時,自接觸構件向上方延伸之複數個支持構件支持基板;於上述處理室內,將基板載置於上述載置部;將上述處理室內之氣體排出;藉由上述冷卻部對上述載置部進行冷卻,並且藉由光源部出射真空紫外線;以當利用上述光源部對基板照射真空紫外線時,上述載置部位於較上述第1位置更靠近上述光源部之第2位置之方式,藉由上述驅動部使上述載置部移動至上述第2位置;及以當向上述處理室外搬出基板時,上述載置部位於上述處理室內之第1位置之方式,藉由上述驅動部使上述載置部移動至上述第1位置。An exposure method includes the steps of: accommodating a substrate in a processing chamber; and when the substrate is carried into the processing chamber, the mounting portion is positioned at a first position in the processing chamber, and the driving portion moves the mounting portion to The first position; cooling the mounting portion by a cooling portion provided on the mounting portion; and supporting the substrate by a plurality of supporting members extending upward from the contact member when the mounting portion is located at the first position ; In the processing chamber, the substrate is placed in the mounting section; the gas in the processing chamber is exhausted; the mounting section is cooled by the cooling section, and the vacuum ultraviolet light is emitted by the light source section; When the light source unit irradiates the substrate with vacuum ultraviolet rays, the mounting unit is positioned at a second position closer to the light source unit than the first position, and the driving unit moves the mounting unit to the second position; and When the substrate is carried out outside the processing chamber, the mounting portion is located at the first position in the processing chamber, and the mounting portion is moved by the driving portion Move to the first position. 一種基板處理方法,其包含:藉由塗佈處理部於基板之被處理面塗佈處理液,藉此於基板形成膜的步驟;藉由熱處理部,對已由上述塗佈處理部形成有膜之基板進行熱處理的步驟;藉由曝光裝置,對已藉由上述熱處理部進行熱處理之基板進行曝光之如請求項13或14之曝光方法;以及藉由顯影處理部,對已藉由上述曝光裝置進行曝光之基板之被處理面供給溶劑,藉此對基板之膜進行顯影的步驟。A substrate processing method, comprising: a step of applying a processing solution to a processed surface of a substrate by a coating processing unit, thereby forming a film on the substrate; and a heat treatment unit, forming a film on the coating processing unit. A step of subjecting the substrate to heat treatment; an exposure method, such as the item 13 or 14, for exposing a substrate that has been heat-treated by the heat treatment section by an exposure device; and a development processing section, which has passed the exposure device described above A step of developing a film of the substrate by supplying a solvent to the processed surface of the substrate to be exposed.
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