TWI682433B - Exposure device, substrate processing apparatus, exposure method for substrate and substrate processing method - Google Patents
Exposure device, substrate processing apparatus, exposure method for substrate and substrate processing method Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Abstract
一種曝光裝置,係以曝光模式和維護模式來切換曝光裝置之動作模式。在曝光模式中係以框體內部之氧濃度成為比大氣中之氧濃度更低的曝光濃度之方式使框體內部之氛圍自抽吸裝置進行排氣。在此狀態下,藉由自光源部對框體內部之基板照射真空紫外線來曝光基板。在維護模式中係在框體內部之氧濃度比曝光模式中的氧濃度更高的狀態下,藉由自光源部對框體內部之氛圍照射真空紫外線來產生臭氧。 An exposure device is to switch the operation mode of the exposure device with the exposure mode and the maintenance mode. In the exposure mode, the atmosphere inside the casing is exhausted from the suction device so that the oxygen concentration inside the casing becomes a lower exposure concentration than the oxygen concentration in the atmosphere. In this state, the substrate is exposed by irradiating vacuum ultraviolet rays from the light source to the substrate inside the housing. In the maintenance mode, in a state where the oxygen concentration inside the frame is higher than that in the exposure mode, ozone is generated by irradiating vacuum ultraviolet rays to the atmosphere inside the frame from the light source section.
Description
本發明係關於一種對基板進行曝光處理的曝光裝置、基板處理裝置、基板曝光方法以及基板處理方法。 The invention relates to an exposure device, a substrate processing device, a substrate exposure method, and a substrate processing method that perform exposure processing on a substrate.
近年來,為了使形成於基板的圖案(pattern)微細化,已持續開發有一種利用嵌段共聚物(block copolymer)之定向自組裝(DSA:Directed Self Assembly)的光微影(photolithography)技術。在此種的光微影技術中,係在對塗布有嵌段共聚物的基板施予加熱處理之後,使基板之一表面予以曝光,藉此使嵌段共聚物改質。在該處理中,要求正確地調整基板之曝光量。 In recent years, in order to miniaturize the pattern formed on the substrate, a photolithography technology using directed self assembly (DSA: Directed Self Assembly) of block copolymers has been continuously developed. In such a photolithography technique, after a block copolymer-coated substrate is subjected to a heat treatment, one surface of the substrate is exposed, thereby modifying the block copolymer. In this process, it is required to accurately adjust the exposure amount of the substrate.
在專利文獻1中係已記載有一種對基板上之包含定向自組裝材料的膜(DSA膜)進行曝光處理的曝光裝置。曝光裝置係具有能射出剖面帶狀之真空紫外線的光射出部,且以基板橫越來自光射出部的真空紫外線之路徑的方式來構成能從光射出部之前方位置朝向後方位置移動。在曝光處 理前,藉由照明度感測器來預先檢測真空紫外線之照明度,且基於所檢測出的照明度來算出基板之移動速度,以便能照射所期望之曝光量的真空紫外線。在曝光處理時,藉由基板以所算出的移動速度來移動,而得以使所期望之曝光量的真空紫外線照射於基板上的DSA膜。
[先前技術文獻] [Prior Technical Literature]
[專利文獻] [Patent Literature]
專利文獻1:日本特開2016-183990號公報。 Patent Document 1: Japanese Patent Laid-Open No. 2016-183990.
在曝光裝置之光射出部係設置有穿透真空紫外線的玻璃板。當長期使用曝光裝置時,因曝光處理所產生之由有機材料所構成的異物就會附著於光射出部之玻璃板。在此情況下,由於玻璃板會變得模糊或混濁,會使玻璃板之光穿透率降低,並且使光穿透率局部成為不均一。因此,曝光處理之效率及精度會降低。另一方面,在維護操作員頻繁地去除已附著於玻璃板的異物的情況下,維護操作員的負擔會變大。另外,由於維護操作需要長時間,所以曝光裝置之運轉停止時間會長期化,且運轉效率會降低。 The light emitting part of the exposure device is provided with a glass plate that penetrates vacuum ultraviolet rays. When the exposure device is used for a long period of time, the foreign material composed of the organic material generated by the exposure process will adhere to the glass plate of the light emitting portion. In this case, since the glass plate becomes blurred or turbid, the light transmittance of the glass plate is reduced, and the light transmittance becomes partially non-uniform. Therefore, the efficiency and accuracy of the exposure process will decrease. On the other hand, when the maintenance operator frequently removes foreign objects that have adhered to the glass plate, the burden on the maintenance operator becomes greater. In addition, since the maintenance operation requires a long time, the operation stop time of the exposure device is prolonged, and the operation efficiency is reduced.
本發明之目的係在於提供一種能夠一邊減低維護操作員之負擔一邊長期維持曝光處理之效率及精度的曝光裝置、基板處理裝置、曝光方法及基板處理方法。 An object of the present invention is to provide an exposure apparatus, a substrate processing apparatus, an exposure method, and a substrate processing method that can maintain the efficiency and accuracy of exposure processing for a long period of time while reducing the burden on maintenance operators.
(1)本發明之一態樣的曝光裝置係用以曝光基板,並具 備有:切換部,係以曝光模式和維護模式來切換曝光裝置之動作模式;處理室,係可供透光性之窗構件安裝,且在曝光模式中收容處理對象之基板;光源部,係設置成可通過窗構件對處理室內部射出真空紫外線;排氣部,用以排出處理室內部的氛圍;第一排氣控制部,係在曝光模式中,控制排氣部以使處理室內部之氧濃度成為比大氣中之氧濃度更低的第一濃度;第一投光控制部,係在曝光模式中,在處理室內部之氧濃度為第一濃度的狀態下,以藉由對處理室內部之基板照射真空紫外線來曝光基板之方式控制光源部;以及第二投光控制部,係在維護模式中,以處理室內部之氧濃度為比第一濃度更高之第二濃度的狀態下,藉由控制光源部對處理室內部之氛圍照射真空紫外線來產生臭氧。 (1) An exposure apparatus of one aspect of the present invention is used to expose a substrate, and is provided with: a switching section to switch the operation mode of the exposure apparatus in an exposure mode and a maintenance mode; a processing chamber is provided for light transmission The window member is installed and houses the substrate to be processed in the exposure mode; the light source part is arranged to emit vacuum ultraviolet rays to the inside of the processing chamber through the window member; the exhaust part is used to exhaust the atmosphere inside the processing chamber; the first exhaust The control unit controls the exhaust unit in the exposure mode so that the oxygen concentration inside the processing chamber becomes a first concentration lower than the oxygen concentration in the atmosphere; the first projection control unit controls the process in the exposure mode When the oxygen concentration in the chamber is at the first concentration, the light source section is controlled by exposing the substrate to vacuum ultraviolet radiation to expose the substrate; and the second projection control section is in maintenance mode to process In a state where the oxygen concentration inside the chamber is a second concentration higher than the first concentration, ozone is generated by controlling the light source section to irradiate the vacuum ultraviolet ray to the atmosphere inside the processing chamber.
在該曝光裝置中係以曝光模式和維護模式來切換動作模式。在曝光模式中係在安裝有透光性之窗構件的處理室內部收容有處理對象之基板。藉由排氣部使處理室內部之氛圍進行排氣以使處理室內部之氧濃度成為比大氣中之氧濃度更低的第一濃度。在該狀態下,藉由自光源部通過窗構件對處理室內部之基板照射真空紫外線來曝光基板。在維護模式中係在處理室內部之氧濃度為比第一濃度更高之第二濃度的狀態下,藉由自光源部通過窗構件對處理室內部之氛圍照射真空紫外線,而在處理室內部產生臭氧。 In this exposure apparatus, the operation mode is switched between the exposure mode and the maintenance mode. In the exposure mode, the substrate to be processed is housed inside the processing chamber where the translucent window member is mounted. The atmosphere inside the processing chamber is exhausted by the exhaust section so that the oxygen concentration inside the processing chamber becomes the first concentration lower than the oxygen concentration in the atmosphere. In this state, the substrate is exposed by irradiating vacuum ultraviolet rays to the substrate inside the processing chamber from the light source through the window member. In the maintenance mode, in a state where the oxygen concentration inside the processing chamber is a second concentration higher than the first concentration, by irradiating vacuum ultraviolet rays from the light source section through the window member to the atmosphere inside the processing chamber, the inside of the processing chamber Ozone is produced.
由於在曝光模式中基板被曝光,所以由有機材料所構成的異物就會慢慢地附著於已安裝於處理室的窗構件之部 分。即便是在如此的情況下,依據上述之構成,仍能藉由在維護模式中產生於處理室內部的臭氧,來分解或去除已附著於窗構件的異物。因此,維護操作員不需要頻繁地去除窗構件之異物。因而得以減低維護操作員的負擔。 Since the substrate is exposed in the exposure mode, foreign substances composed of organic materials gradually adhere to the part of the window member that has been installed in the processing chamber. Even in such a case, according to the above-described configuration, the foreign matter that has adhered to the window member can be decomposed or removed by the ozone generated in the treatment chamber in the maintenance mode. Therefore, the maintenance operator does not need to frequently remove foreign matter from the window member. This reduces the burden on maintenance operators.
另外,因能縮短維護操作所需的時間,故使曝光裝置之運轉停止時間最小化。藉此,得以改善曝光裝置之運轉效率。更且,由於得以防止因異物所致的窗構件之模糊及混濁,且得以使窗構件之穿透性維持在較高的狀態下,所以即便是在曝光裝置已長期間使用的情況下,仍得以防止曝光處理之效率及精度降低。此等的結果,能一邊減低維護操作員之負擔一邊長期維持曝光處理之效率及精度。 In addition, since the time required for maintenance operations can be shortened, the operation stop time of the exposure device is minimized. In this way, the operating efficiency of the exposure device can be improved. Moreover, since the window member is prevented from being blurred and clouded due to foreign matter, and the penetration of the window member is maintained at a high state, even when the exposure device has been used for a long period of time, It can prevent the efficiency and accuracy of the exposure process from decreasing. As a result of these, the efficiency and accuracy of the exposure process can be maintained for a long period of time while reducing the burden on the maintenance operator.
(2)曝光裝置亦可更具備:第二排氣控制部,係在維護模式中,控制排氣部以排出產生於處理室內部之臭氧。在此情況下,能在已附著於窗構件的異物被去除之後,輕易地排出殘留於處理室內部的臭氧。 (2) The exposure device may further include: a second exhaust control unit, which controls the exhaust unit to discharge ozone generated inside the processing chamber in the maintenance mode. In this case, after the foreign matter that has adhered to the window member is removed, the ozone remaining inside the processing chamber can be easily discharged.
(3)第二濃度亦可為大氣中的氧濃度。在此情況下,能在維護模式中,輕易地實現比第一濃度更高之第二濃度的狀態。 (3) The second concentration may also be the oxygen concentration in the atmosphere. In this case, the state of the second concentration higher than the first concentration can be easily realized in the maintenance mode.
(4)第一濃度亦可為不會依藉由光源部所射出的真空紫外線而產生臭氧的氧濃度。在此情況下,能在曝光模式中,不使真空紫外線衰減地照射於基板。藉此,能改善曝光裝置之效率。 (4) The first concentration may be an oxygen concentration that does not generate ozone according to the vacuum ultraviolet rays emitted by the light source. In this case, the substrate can be irradiated without attenuating vacuum ultraviolet rays in the exposure mode. Thereby, the efficiency of the exposure device can be improved.
(5)曝光裝置亦可更具備:供氣部,係在曝光模式中,對處理室內部供給惰性氣體。在此情況下,能輕易地且充分地減低曝光模式中的處理室內部之氧濃度。 (5) The exposure device may further include: a gas supply unit, which supplies an inert gas to the inside of the processing chamber in the exposure mode. In this case, the oxygen concentration inside the processing chamber in the exposure mode can be easily and sufficiently reduced.
(6)光源部亦可以射出具有面狀之剖面的真空紫外線的方式所構成。在此情況下,得以寬範圍地射出真空紫外線。因此,能在曝光模式中,在短時間內結束基板之曝光處理。另外,由於能在維護模式中,輕易地產生足夠份量的臭氧,所以能在短時間內結束已附著於窗構件的異物之分解或去除。 (6) The light source unit may be configured to emit vacuum ultraviolet rays having a planar cross section. In this case, vacuum ultraviolet rays can be emitted in a wide range. Therefore, the exposure process of the substrate can be ended in a short time in the exposure mode. In addition, since a sufficient amount of ozone can be easily generated in the maintenance mode, the decomposition or removal of foreign matter that has adhered to the window member can be ended in a short time.
(7)藉由光源部所為的真空紫外線之射出面積,亦可比基板之面積更大。在此情況下,由於能在曝光模式中,進行基板之全面曝光,所以能在更短時間內結束基板之曝光處理。另外,能在維護模式中,在更短時間內結束已附著於窗構件的異物之分解或去除。 (7) The area of the vacuum ultraviolet rays emitted by the light source may be larger than the area of the substrate. In this case, since the entire exposure of the substrate can be performed in the exposure mode, the exposure processing of the substrate can be completed in a shorter time. In addition, in the maintenance mode, the decomposition or removal of foreign matter that has adhered to the window member can be ended in a shorter time.
(8)本發明之另一態樣的基板處理裝置,係具備:塗布處理部,係藉由對基板塗布處理液而在基板形成膜;熱處理部,係對經由塗布處理部形成有膜的基板施以熱處理;本發明之一態樣的曝光裝置,係在曝光模式中對經由熱處理部熱處理後的基板施以曝光;以及顯影處理部,係藉由對經由曝光裝置曝光後的基板供給溶劑而使基板的膜顯影。 (8) A substrate processing apparatus according to another aspect of the present invention includes: a coating processing section that forms a film on a substrate by applying a processing liquid to the substrate; a heat treatment section that applies a substrate formed with a film through the coating processing section Heat treatment; the exposure apparatus of one aspect of the present invention exposes the substrate heat-treated by the heat treatment section in the exposure mode; and the development processing section supplies the substrate exposed by the exposure apparatus with a solvent The film of the substrate is developed.
在該基板處理裝置中係得以經由塗布處理部對基板塗布處理液,藉此在基板形成膜。能藉由熱處理部來對經由塗布處理部形成有膜的基板施以熱處理。經由熱處理部 熱處理後的基板得以藉由上述之曝光裝置在曝光模式中曝光。藉由顯影處理部對經由曝光裝置曝光後的基板供給溶劑,藉此使基板的膜顯影。 In this substrate processing apparatus, it is possible to apply a processing liquid to the substrate via the coating processing section, thereby forming a film on the substrate. The substrate formed with the film through the coating treatment section can be subjected to heat treatment by the heat treatment section. The substrate heat-treated by the heat treatment section can be exposed in the exposure mode by the above-mentioned exposure device. The development processing section supplies a solvent to the substrate exposed by the exposure device, thereby developing the film of the substrate.
在曝光裝置中係由於在曝光模式中基板被曝光,因此由有機材料所構成的異物就會慢慢地附著於已安裝於處理室的窗構件之部分。即便是在此情況下,仍能藉由在上述之維護模式中產生於處理室內部的臭氧來分解或去除已附著於窗構件的異物。藉此,能一邊減低維護操作員之負擔一邊長期維持藉由基板處理裝置所為的基板處理之效率及精度。 In the exposure apparatus, since the substrate is exposed in the exposure mode, foreign substances composed of organic materials will slowly adhere to the part of the window member that has been installed in the processing chamber. Even in this case, the foreign matter that has adhered to the window member can be decomposed or removed by the ozone generated inside the processing chamber in the above-mentioned maintenance mode. With this, the efficiency and accuracy of the substrate processing by the substrate processing apparatus can be maintained for a long period of time while reducing the burden on the maintenance operator.
(9)處理液亦可包含定向自組裝材料。在此情況下,藉由熱處理已塗布有包含定向自組裝材料的處理液的基板,而得以在基板之一表面上產生微相分離(microphase separation)。另外,得以對藉由微相分離形成有二種類的聚合物之圖案的基板予以曝光及顯影。藉此,能去除二種類的聚合物中之一方,並形成微細化的圖案。 (9) The treatment liquid may also contain directional self-assembly materials. In this case, by heat-treating the substrate that has been coated with the treatment liquid containing the oriented self-assembly material, microphase separation can be generated on one surface of the substrate. In addition, it is possible to expose and develop a substrate in which patterns of two types of polymers are formed by microphase separation. By this, one of the two types of polymers can be removed and a fine pattern can be formed.
(10)本發明之更另一態樣的基板曝光方法,係使用曝光裝置來曝光基板,且包含:以曝光模式和維護模式來切換曝光裝置之動作模式的步驟;在曝光模式中,將處理對象之基板收容於安裝有透光性之窗構件的處理室內部的步驟;在曝光模式中,藉由排氣部排出處理室內部之氛圍,以使處理室內部之氧濃度成為比大氣中之氧濃度更低的第一濃度的步驟;在曝光模式中,在處理室內部之氧濃度為第一濃度的狀態下,藉由自光源部通過窗構件對處理室內 部之基板照射真空紫外線來曝光基板的步驟;以及在維護模式中,在處理室內部之氧濃度為比第一濃度更高之第二濃度的狀態下,藉由自光源部通過窗構件對處理室內部之氛圍照射真空紫外線來產生臭氧的步驟。 (10) In another aspect of the present invention, the substrate exposure method uses an exposure device to expose the substrate, and includes the steps of switching the operation mode of the exposure device between the exposure mode and the maintenance mode; in the exposure mode, processing The step of accommodating the target substrate in the interior of the processing chamber where the translucent window member is installed; In the exposure mode, the atmosphere inside the processing chamber is exhausted by the exhaust section so that the oxygen concentration inside the processing chamber becomes lower than that in the atmosphere The step of the first concentration with a lower oxygen concentration; in the exposure mode, in a state where the oxygen concentration inside the processing chamber is the first concentration, exposure is performed by irradiating vacuum ultraviolet rays from the light source section through the window member to the substrate inside the processing chamber The steps of the substrate; and in the maintenance mode, by irradiating vacuum ultraviolet rays to the atmosphere inside the processing chamber from the light source through the window member in a state where the oxygen concentration inside the processing chamber is at a second concentration higher than the first concentration Steps to generate ozone.
依據該曝光方法,由於在曝光模式中基板被曝光,所以由有機材料所構成的異物就會慢慢地附著於已安裝於處理室的窗構件之部分。即便是在此情況下,仍能藉由在維護模式中產生於處理室內部的臭氧,來分解或去除已附著於窗構件的異物。藉此,能一邊減低維護操作員之負擔一邊長期維持曝光處理之效率及精度。 According to this exposure method, since the substrate is exposed in the exposure mode, the foreign material composed of the organic material slowly adheres to the part of the window member that has been installed in the processing chamber. Even in this case, the foreign matter that has adhered to the window member can be decomposed or removed by the ozone generated in the treatment chamber in the maintenance mode. With this, the efficiency and accuracy of the exposure process can be maintained for a long time while reducing the burden on the maintenance operator.
(11)本發明之更另一態樣的基板處理方法,係包含:藉由塗布處理部對基板塗布處理液,藉此在基板形成膜的步驟;藉由熱處理部對經由塗布處理部形成有膜的基板施以熱處理的步驟;本發明之更另一態樣的曝光方法,係在曝光模式中藉由曝光裝置對經由熱處理部熱處理後的基板施以曝光;以及藉由顯影處理部對經由曝光裝置曝光後的基板供給溶劑而使基板的膜顯影的步驟。 (11) A still further aspect of the substrate processing method of the present invention includes the steps of: applying a processing liquid to the substrate by the coating processing section, thereby forming a film on the substrate; forming the film through the coating processing section by the heat treatment section The step of applying heat treatment to the substrate of the film; in another aspect of the invention, the exposure method is to expose the substrate heat-treated by the heat treatment section by an exposure device in the exposure mode; The step of supplying a solvent to the substrate after exposure by the exposure device to develop the film of the substrate.
依據該基板處理方法,由於在曝光裝置之曝光模式中基板被曝光,所以由有機材料所構成的異物就會慢慢地附著於已安裝於處理室的窗構件之部分。即便是在此情況下,仍能藉由在曝光裝置之維護模式中產生於處理室內部的臭氧,來分解或去除已附著於窗構件的異物。藉此,能一邊減低維護操作員之負擔一邊長期維持基板處理之效率及精度。 According to this substrate processing method, since the substrate is exposed in the exposure mode of the exposure device, the foreign matter composed of the organic material slowly adheres to the part of the window member that has been installed in the processing chamber. Even in this case, the foreign matter that has adhered to the window member can be decomposed or removed by the ozone generated in the processing chamber in the maintenance mode of the exposure device. With this, the efficiency and accuracy of substrate processing can be maintained for a long period of time while reducing the burden on the maintenance operator.
依據本發明,能一邊減低維護操作員之負擔一邊長期維持曝光處理之效率及精度。 According to the present invention, the efficiency and accuracy of the exposure process can be maintained for a long period of time while reducing the burden on the maintenance operator.
1‧‧‧閉塞控制部 1‧‧‧Occlusion control department
2‧‧‧升降控制部 2‧‧‧ Lifting Control Department
3‧‧‧排氣控制部 3‧‧‧Exhaust Control Department
4‧‧‧供氣控制部 4‧‧‧Gas supply control department
5‧‧‧濃度取得部 5‧‧‧Concentration acquisition department
6‧‧‧濃度比較部 6‧‧‧Concentration Comparison Department
7‧‧‧照明度取得部 7‧‧‧ Illumination Acquisition Department
8‧‧‧曝光量算出部 8‧‧‧Exposure calculation unit
9‧‧‧曝光量比較部 9‧‧‧Exposure Comparison Department
10‧‧‧投光控制部 10‧‧‧Projection Control Department
11‧‧‧切換部 11‧‧‧ Switching Department
100‧‧‧曝光裝置 100‧‧‧Exposure device
110‧‧‧控制部 110‧‧‧Control Department
120‧‧‧處理室 120‧‧‧Processing room
121‧‧‧框體 121‧‧‧Frame
121a‧‧‧搬運開口 121a‧‧‧Transport opening
121b、141a‧‧‧開口部 121b, 141a‧‧‧ opening
122‧‧‧環狀構件 122‧‧‧ring member
123‧‧‧被覆構件 123‧‧‧Coated member
130‧‧‧閉塞部 130‧‧‧Occlusion Department
131‧‧‧擋門 131‧‧‧stop door
131a、s1、s2、s3‧‧‧密封構件 131a, s1, s2, s3
132、152‧‧‧連結構件 132、152‧‧‧Connecting member
133、153‧‧‧驅動裝置 133, 153‧‧‧ drive device
133a、133b、153a、153b‧‧‧位置感測器 133a, 133b, 153a, 153b ‧‧‧ position sensor
140‧‧‧遞送部 140‧‧‧Delivery Department
141‧‧‧支撐板 141‧‧‧support plate
142‧‧‧支撐銷 142‧‧‧Support pin
150‧‧‧升降部 150‧‧‧ Lifting Department
151‧‧‧載置板 151‧‧‧ Placement board
151a‧‧‧貫通孔 151a‧‧‧Through hole
160‧‧‧投光部 160‧‧‧Projection Department
161‧‧‧外殼 161‧‧‧Housing
162‧‧‧透光板 162‧‧‧Transparent board
163‧‧‧光源部 163‧‧‧Light Source Department
164‧‧‧電源裝置 164‧‧‧Power supply device
170‧‧‧置換部 170‧‧‧ Replacement Department
171p、172p、173p‧‧‧配管 171p, 172p, 173p‧‧‧ piping
171v、172v、173v‧‧‧閥 171v, 172v, 173v
173‧‧‧抽吸裝置 173‧‧‧Suction device
173a、173b‧‧‧歧管 173a, 173b ‧‧‧ Manifold
180‧‧‧計測部 180‧‧‧Measurement Department
181‧‧‧氧濃度計 181‧‧‧Oxygen concentration meter
182‧‧‧臭氧濃度計 182‧‧‧Ozone concentration meter
183‧‧‧照度計 183‧‧‧illuminance meter
200‧‧‧基板處理裝置 200‧‧‧Substrate processing device
210‧‧‧控制裝置 210‧‧‧Control device
220‧‧‧搬運裝置 220‧‧‧Handling device
230‧‧‧熱處理裝置 230‧‧‧heat treatment device
240‧‧‧塗布裝置 240‧‧‧Coating device
250‧‧‧顯影裝置 250‧‧‧Developing device
L1‧‧‧基底層 L1‧‧‧Base layer
L2‧‧‧導引圖案 L2‧‧‧Guide pattern
L3‧‧‧DSA膜 L3‧‧‧DSA film
LV‧‧‧一定值 LV‧‧‧ Certain value
p1、p2、p3‧‧‧連接埠 p1, p2, p3 ‧‧‧ port
Q1、Q2‧‧‧圖案 Q1, Q2‧‧‧‧pattern
W‧‧‧基板 W‧‧‧Substrate
圖1係顯示本發明之一實施形態的曝光裝置之構成的示意剖視圖。 FIG. 1 is a schematic cross-sectional view showing the configuration of an exposure apparatus according to an embodiment of the present invention.
圖2係顯示圖1的控制部之構成的功能方塊圖。 FIG. 2 is a functional block diagram showing the configuration of the control unit of FIG.
圖3係用以說明曝光模式中的曝光裝置之動作的示意圖。 FIG. 3 is a schematic diagram for explaining the operation of the exposure device in the exposure mode.
圖4係用以說明曝光模式中的曝光裝置之動作的示意圖。 4 is a schematic diagram for explaining the operation of the exposure device in the exposure mode.
圖5係用以說明曝光模式中的曝光裝置之動作的示意圖。 5 is a schematic diagram for explaining the operation of the exposure device in the exposure mode.
圖6係用以說明曝光模式中的曝光裝置之動作的示意圖。 6 is a schematic diagram for explaining the operation of the exposure device in the exposure mode.
圖7係顯示在曝光模式中藉由圖2之控制部所進行的曝光處理之一例的流程圖。 7 is a flowchart showing an example of exposure processing performed by the control unit of FIG. 2 in the exposure mode.
圖8係顯示在曝光模式中藉由圖2之控制部所進行的曝光處理之一例的流程圖。 8 is a flowchart showing an example of exposure processing performed by the control unit of FIG. 2 in the exposure mode.
圖9係顯示在維護模式中藉由圖2之控制部所進行的維護處理之一例的流程圖。 9 is a flowchart showing an example of maintenance processing performed by the control unit of FIG. 2 in the maintenance mode.
圖10係顯示具備有圖1之曝光裝置的基板處理裝置之整體構成的示意方塊圖。 10 is a schematic block diagram showing the overall configuration of a substrate processing apparatus equipped with the exposure apparatus of FIG. 1.
圖11中的(a)至(d)係顯示藉由圖10之基板處理裝置所 為的基板之處理之一例的示意圖。 (A) to (d) in FIG. 11 are schematic diagrams showing an example of substrate processing performed by the substrate processing apparatus of FIG. 10.
以下,使用圖式就本發明之一實施形態的曝光裝置、基板處理裝置、曝光方法及基板處理方法加以說明。再者,在以下之說明中,所謂基板係指半導體基板、液晶顯示裝置或是有機EL(Electro Luminescence;電致發光)顯示裝置等的FPD(Flat Panel Display;平板顯示器)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩(photomask)用基板或太陽能電池用基板等。 Hereinafter, an exposure apparatus, substrate processing apparatus, exposure method, and substrate processing method according to an embodiment of the present invention will be described using drawings. In the following description, the substrate refers to a substrate for FPD (Flat Panel Display), a substrate for optical discs such as a semiconductor substrate, a liquid crystal display device, an organic EL (Electro Luminescence) display device, etc. , Substrates for magnetic discs, substrates for magneto-optical discs, substrates for photomasks, substrates for solar cells, etc.
(1)曝光裝置之構成 (1) Composition of exposure device
圖1係顯示本發明之一實施形態的曝光裝置之構成的示意剖視圖。如圖1所示,曝光裝置100係包含控制部110、處理室120、閉塞部130、遞送部140、升降部150、投光部160、置換部170及計測部180。控制部110係自計測部180取得計測值,並且控制閉塞部130、升降部150、投光部160及置換部170之動作。關於控制部110的功能係容後述。 FIG. 1 is a schematic cross-sectional view showing the configuration of an exposure apparatus according to an embodiment of the present invention. As shown in FIG. 1, the
處理室120係包含:具有上部開口及內部空間的框體121、環狀構件122及被覆構件123。在框體121之側面係形成有用以在框體121的內部與外部之間搬運處理對象之基板W的搬運開口121a。再者,在本實施形態中,在處理對象之基板W係形成有包含定向自組裝材料的膜(以下,稱為DSA膜)。另外,在框體121之底面係形成有可供後面所述的升降部150之連結構件152通過的開口部121b。 The
藉由後面所述的投光部160之外殼(housing)161透過環狀構件122配置於框體121之上部,就能閉塞框體121之上部開口。在框體121與環狀構件122之間、以及環狀構件122與外殼161之間係分別安裝有密封構件s1、s2。另外,以覆蓋環狀構件122之外周面的方式在框體121與外殼161之間安裝有被覆構件123。 When the
閉塞部130係包含擋門(shutter)131、棒形狀之連結構件132及驅動裝置133。連結構件132係連結擋門131和驅動裝置133。驅動裝置133,例如是步進馬達(stepping motor)。驅動裝置133係在擋門131開放搬運開口121a的開放位置、與擋門131閉塞搬運開口121a的閉塞位置之間使擋門131移動。 The blocking
在擋門131係安裝有密封構件131a。在擋門131位於閉塞位置的狀態中,係藉由密封構件131a密接於包圍框體121中之搬運開口121a的部分來密閉框體121之內部。 A sealing
再者,為了防止密封構件131a與框體121之摩擦,驅動裝置133係在使擋門131在開放位置與閉塞位置之間移動時,以離開框體121的狀態下使擋門131朝向上下方向移動。在驅動裝置133係安裝有分別檢測擋門131之上限位置及下限位置的位置感測器133a、133b。位置感測器133a、133b係將檢測結果提供給控制部110。 In addition, in order to prevent the friction between the sealing
遞送部140係包含例如圓板形狀之支撐板141及複數個(本例中為三個)支撐銷142。支撐板141係以水平姿勢配置於框體121內部。在支撐板141之中央部係形成有可供 後面所述的升降部150之連結構件152通過的開口部141a。複數個支撐銷142係以包圍開口部141a的方式自支撐板141之上表面朝向上方延伸。在複數個支撐銷142之上端部,能載置處理對象之基板W。 The
升降部150係包含平板形狀之載置板151、棒形狀之連結構件152及驅動裝置153。載置板151係在框體121內部以水平姿勢配置於遞送部140的支撐板141之上方。在載置板151係形成有分別與支撐板141之複數個支撐銷142對應的複數個貫通孔151a。 The
連結構件152係以通過框體121之開口部121b及支撐板141之開口部141a並上下延伸的方式所配置,驅動裝置153係配置於框體121之下方。連結構件152係連結載置板151和驅動裝置153。在連結構件152的外周面與開口部121b的內周面之間係配置有連結構件152能夠朝向上下方向滑動的密封構件s3。 The connecting
驅動裝置153,例如是步進馬達,用以使載置板151在比複數個支撐銷142之上端部更上方的處理位置、與比複數個支撐銷142之上端部更下方的待機位置之間朝向上下方向移動。在載置板151處於待機位置的狀態下,複數個支撐銷142得以分別插通於複數個貫通孔151a。於驅動裝置153中係安裝有分別檢測載置板151之上限位置及下限位置的位置感測器153a、153b。位置感測器153a、153b係將檢測結果提供給控制部110。 The
投光部160係包含具有下部開口及內部空間的外殼 161、透光板162、面狀之光源部163及電源裝置164。在本實施形態中,透光板162為石英玻璃板。作為透光板162之材料,亦可使用穿透後面所述之真空紫外線的其他材料。如上所述,外殼161係以閉塞框體121之上部開口的方式配置於框體121之上部。透光板162係以閉塞外殼161之下部開口的方式安裝於外殼161。框體121的內部空間和外殼161的內部空間係被隔成為可藉由透光板162進行光學存取。 The
光源部163及電源裝置164係收容於外殼161內部。在本實施形態中,藉由以預定之間隔水平地排列複數個棒形狀之光源而構成光源部163,該複數個棒形狀之光源係射出波長約120nm以上約230nm以下之真空紫外線。各個光源,既可為例如氙準分子燈(xenon excimer lamp),亦可為其他的準分子燈或重氫燈(deuterium lamp)。光源部163係通過透光板162對框體121內部射出具有大致均一之光量分布的真空紫外線。光源部163中的真空紫外線之射出面的面積係比基板W隻被處理面的面積更大。電源裝置164係對光源部163供給電力。 The
置換部170係包含配管171p、172p、173p、閥171v、172v及抽吸裝置173。配管171p、172p係連接於框體121的供氣口與惰性氣體的供給源之間。在本實施形態中,惰性氣體例如是氮氣。在配管171p、172p係夾插有閥171v、172v。 The
通過配管171p並自支撐板141之側方朝向框體121內 部供給惰性氣體。通過配管172p並自支撐板141之下方對框體121內部供給惰性氣體。惰性氣體之流量係藉由閥171v、172v所調整。在本實施形態中係使用氮氣作為惰性氣體。 Inert gas is supplied from the side of the
配管173p係分歧為歧管173a和歧管173b。歧管173a係連接於框體121之排氣口,歧管管173b之端部係配置於框體121與擋門131之間。在配管173p係夾插有抽吸裝置173。在歧管173b係夾插有閥173v。抽吸裝置173,例如是噴射器(ejector)。配管173p係連接於排氣設備。抽吸裝置173係通過歧管173a及配管173p來排出框體121內部的氛圍。另外,抽吸裝置173係將框體121與擋門131之間的氛圍與藉由擋門131之移動所產生的塵埃等一起通過歧管173b及配管173p來排出。藉由抽吸裝置173所排出的氣體係藉由排氣設備而無害化。 The
計測部180係包含氧濃度計181、臭氧濃度計182及照度計183。氧濃度計181、臭氧濃度計182及照度計183係分別通過已設置於框體121的連接埠p1、p2、p3來連接於控制部110。氧濃度計181,例如是賈法尼(Galvanic)電池式氧氣感測器或氧化鋯(zirconia)式氧氣感測器,用以計測框體121內部的氧濃度。臭氧濃度計182係計測框體121內部的臭氧濃度。 The
照度計183係包含光電二極體(photo diode)等的受光元件,且計測來自光源部163照射於受光元件之受光面的真空紫外線之照明度。在此,所謂照明度係指照射於受光面 之每一單位面積的真空紫外線之功率(power)。照明度之單位,例如是以「W/m2」來表示。 The
(2)動作模式 (2) Action mode
曝光裝置100係以進行基板W之曝光處理的曝光模式、和進行投光部160的透光板162之維護處理的維護模式選擇性地動作。在曝光模式中係藉由自光源部163對基板W照射真空紫外線來進行曝光處理。 The
然而,在框體121內部之氧濃度較高的情況下,藉由氧分子吸收真空紫外線並分離成氧原子,並且所分離出的氧原子與其他的氧分子再鍵結來產生臭氧。在此情況下,到達基板W的真空紫外線會衰減。與波長比約230nm更長之紫外線的衰減相比,真空紫外線之衰減較大。於是,在曝光處理時,框體121內部的氛圍會藉由置換部170而置換成惰性氣體。藉此,框體121內部的氧濃度會降低。 However, when the oxygen concentration inside the
在藉由氧濃度計181所計測的氧濃度已降低至比大氣中之氧濃度更低之預先決定的濃度(以下,稱為曝光濃度)為止的情況下,自光源部163對基板W照射真空紫外線。在此,所謂大氣中之氧濃度係指並未進行成分調整之狀態的大氣中之氧濃度,例如是標準狀態的空氣中之氧濃度。曝光濃度,較佳為不會依藉由光源部163所射出的真空紫外線而產生臭氧的氧濃度(例如1%)。 When the oxygen concentration measured by the
在照射於基板W的真空紫外線之曝光量已到達預先決定的設定曝光量的情況下,停止真空紫外線之照射,且結束曝光處理。在此,所謂曝光量係指在曝光處理時照射 於基板W之被處理面之每一單位面積的真空紫外線之能量。曝光量之單位,例如是以「J/m2」來表示。因此,真空紫外線之曝光量得以藉由照度計183所計測的真空紫外線之照明度的累計所取得。 When the exposure amount of the vacuum ultraviolet rays irradiated on the substrate W has reached the predetermined set exposure amount, the irradiation of the vacuum ultraviolet rays is stopped, and the exposure process is ended. Here, the exposure amount refers to the energy of vacuum ultraviolet rays irradiated to each unit area of the surface to be processed of the substrate W during the exposure process. The unit of exposure is represented by "J/m 2 ", for example. Therefore, the exposure amount of vacuum ultraviolet rays can be obtained by accumulating the illuminance of vacuum ultraviolet rays measured by the
當對基板W進行曝光處理時,就會自基板W產生由有機材料所構成的異物,且慢慢地附著於透光部160之透光板162。因此,在已長期間使用曝光裝置100的情況下,會因為透光板162變得模糊或混濁,而使透光板162之光穿透率降低,並且光穿透率會局部成為不均一。於是,在維護模式中係進行將已附著於透光板162的異物予以去除的維護處理。 When the substrate W is exposed to light, a foreign substance made of an organic material is generated from the substrate W, and slowly adheres to the light-transmitting
具體而言,在維護模式中係以框體121內部之氧濃度比曝光濃度更高的狀態下,自光源部163射出真空紫外線。在此情況下,會在框體121內部產生臭氧。藉此,已附著於透光板162的異物得以藉由所產生的臭氧來洗淨、分解或去除。之後,臭氧會通過抽吸裝置173而排出,且結束維護處理。維護模式中的框體121內部之氧濃度,亦可為大氣中之氧濃度。 Specifically, in the maintenance mode, the vacuum ultraviolet rays are emitted from the
(3)控制部 (3) Control Department
圖2係顯示圖1的控制部110之構成的功能方塊圖。如圖2所示,控制部110係包含閉塞控制部1、升降控制部2、排氣控制部3、供氣控制部4、濃度取得部5、濃度比較部6、照明度取得部7、曝光量算出部8、曝光量比較部9、投光控制部10及切換部11。 FIG. 2 is a functional block diagram showing the configuration of the
控制部110,例如是藉由CPU(Central Processing Unit;中央處理器(亦即中央運算處理裝置))及記憶體所構成。在控制部110之記憶體中係預先記憶有控制程式。藉由控制部110之CPU執行已記憶於記憶體中的控制程式,而得以實現控制部110之各部的功能。 The
閉塞控制部1係基於圖1的位置感測器133a、133b之檢測結果,來控制驅動裝置133以使擋門131在閉塞位置與開放位置之間移動。升降控制部2係基於圖1的位置感測器153a、153b之檢測結果,來控制驅動裝置153以使載置板151在待機位置與處理位置之間移動。 The blocking
排氣控制部3係控制抽吸裝置173及閥173v以將圖1的框體121內部之氛圍以及框體121與擋門131之間的氛圍予以排出。供氣控制部4係控制圖1的閥171v、172v以供給惰性氣體。 The
濃度取得部5係取得藉由圖1之氧濃度計181所計測到的氧濃度之值。濃度比較部6係比較藉由濃度取得部5所計測到的氧濃度和曝光濃度。 The
照明度取得部7係取得藉由圖1之照度計183所計測到的真空紫外線之照明度的值。曝光量算出部8係基於藉由照明度取得部7所取得的真空紫外線之照明度、和來自圖1之光源部163的真空紫外線之射出時間,來算出照射於基板W的真空紫外線之曝光量。曝光量比較部9係比較藉由曝光量算出部8所算出的曝光量和預先決定的設定曝光量。 The
投光控制部10係基於藉由濃度比較部6所為的比較結果以及藉由曝光量比較部9所為的比較結果來控制電源裝置164,以使圖1之光源部163射出真空紫外線。另外,投光控制部10係控制電源裝置164以便在預定之時間點使光源部163僅在預先決定的時間(以下,稱為洗淨時間)射出真空紫外線。更且,投光控制部10係將電源裝置164之控制時間,作為來自光源部163的真空紫外線之射出時間來提供給曝光量算出部8。 The light
切換部11係在曝光模式與維護模式之間切換曝光裝置100之動作模式。具體而言,切換部11係以曝光裝置100在未以曝光模式動作的期間以維護模式動作的方式來切換動作模式。控制部110之各部係以藉由切換部11所切換後的動作模式來動作。曝光模式及維護模式中的控制部110之各部的動作之詳細內容係容後述。 The switching unit 11 switches the operation mode of the
切換部11,亦可在曝光模式中曝光處理預先設定的片數之基板W、或在曝光模式中已經過預先設定時間的情況下,將動作模式自曝光模式切換至維護模式。另外,切換部11,亦可在維護模式中已結束維護處理的情況下,將動作模式自維護模式切換至曝光模式。 The switching unit 11 may switch the operation mode from the exposure mode to the maintenance mode when the predetermined number of substrates W are exposed in the exposure mode or when a predetermined time has passed in the exposure mode. In addition, the switching unit 11 may switch the operation mode from the maintenance mode to the exposure mode when the maintenance process has been completed in the maintenance mode.
(4)曝光處理 (4) Exposure processing
圖3至圖6係用以說明曝光模式中的曝光裝置100之動作的示意圖。在圖3至圖6中,為了容易辨識框體121內部及外殼161內部之構成,係省略一部分的構成要素的圖示,並且以一點鏈線來顯示框體121及外殼161的輪廓。 圖7及圖8係顯示在曝光模式中藉由圖2之控制部110所進行的曝光處理之一例的流程圖。以下,一邊參照圖3至圖6一邊說明藉由控制部110所為的曝光處理。 3 to 6 are schematic diagrams for explaining the operation of the
如圖3所示,在曝光處理之初期狀態中,擋門131位於閉塞位置,載置板151位於待機位置。另外,框體121內部的氧濃度係藉由氧濃度計181常態或定期地計測,且藉由濃度取得部5所取得。在該時間點,藉由氧濃度計181所計測的框體121內部之氧濃度係等於大氣中的氧濃度。 As shown in FIG. 3, in the initial state of the exposure process, the
首先,如圖4所示,閉塞控制部1係使擋門131移動至開放位置(步驟S1)。藉此,能通過搬運開口121a將處理對象之基板W載置於複數個支撐銷142之上端部。在本例中係藉由後面所述的圖10之搬運裝置220使基板W被載置於複數個支撐銷142之上端部。 First, as shown in FIG. 4, the blocking
其次,升降控制部2係判定基板W是否已載置於複數個支撐銷142之上端部(步驟S2)。在基板W未被載置的情況下,升降控制部2就待機至基板W被載置於複數個支撐銷142之上端部為止。在基板W已被載置的情況下,如圖5所示,升降控制部2係使擋門131移動至閉塞位置(步驟S3)。 Next, the
接著,排氣控制部3係藉由圖1之抽吸裝置173來排出框體121內部的氛圍(步驟S4)。另外,供氣控制部4係通過圖1之配管171p、172p使惰性氣體供給至框體121內部(步驟S5)。步驟S4、S5之處理,無論是哪一個先開始皆可,也可同時開始。之後,如圖6所示,升降控制部2係 使載置板151移動至處理位置(步驟S6)。藉此,基板W得以自複數個支撐銷142遞送至載置板151,且鄰近於透光板162。 Next, the
在此,濃度比較部6係判定框體121內部的氧濃度是否已降低至曝光濃度為止(步驟S7)。在氧濃度並未降低至曝光濃度為止的情況下,濃度比較部6係待機至氧濃度減低至曝光濃度為止。在氧濃度已減低至曝光濃度為止的情況下,投光控制部10係藉由光源部163來射出真空紫外線(步驟S8)。藉此,真空紫外線會自光源部163通過透光板162而照射於基板W,且使已形成於被處理面的DSA膜被曝光。 Here, the
另外,照明度取得部7係使照度計183開始真空紫外線之照明度的計測,且自照度計183取得所計測到的照明度(步驟S9)。步驟S8、S9之處理係大致同時開始。曝光量算出部8係藉由累計藉由照明度取得部7所取得的真空紫外線之照明度來算出照射於基板W的真空紫外線之曝光量(步驟S10)。 In addition, the
其次,曝光量比較部9係判定藉由曝光量算出部8所算出的曝光量是否已到達設定曝光量(步驟S11)。在曝光量並未到達設定曝光量的情況下,曝光量比較部9係待機至曝光量到達設定曝光量為止。在曝光量已到達設定曝光量的情況下,投光控制部10係使來自光源部163的真空紫外線之射出停止(步驟S12)。另外,照明度取得部7係使藉由照度計183所為的照明度之計測停止(步驟S13)。 Next, the exposure
其次,如圖5所示,升降控制部2係使載置板151移動至待機位置(步驟S14)。藉此,基板W得以自載置板151遞送至複數個支撐銷142。接著,排氣控制部3係使藉由抽吸裝置173所為的框體121內部之氛圍的排出停止(步驟S15)。另外,供氣控制部4係使自配管171p、172p往框體121內部的惰性氣體之供給停止(步驟S16)。步驟S14至S16之處理,無論是哪一個先開始皆可,也可同時開始。 Next, as shown in FIG. 5, the elevating
之後,如圖4所示,閉塞控制部1係使擋門131移動至開放位置(步驟S17)。藉此,能通過搬運開口121a自複數個支撐銷142上回收曝光後的基板W。在本例中,係藉由後面所述的圖10之搬運裝置220使基板W自複數個支撐銷142上回收。 Thereafter, as shown in FIG. 4, the blocking
其次,閉塞控制部1係判定基板W是否已自複數個支撐銷142上回收(步驟S18)。在基板W未被回收的情況下,閉塞控制部1係待機至基板W自複數個支撐銷142上回收為止。在基板W已被回收的情況下,如圖3所示,閉塞控制部1係使擋門131移動至閉塞位置(步驟S19),且結束曝光處理。藉由重複進行上述之動作,就能對複數個基板W依順序進行曝光處理。 Next, the
(5)維護模式 (5) Maintenance mode
圖9係顯示藉由圖2之控制部110所進行的維護處理之一例的流程圖。以下,一邊參照圖3及圖9一邊說明藉由控制部110所為的維護處理。如圖3所示,在維護處理之初期狀態中,擋門131位於閉塞位置,載置板151位於 待機位置。另外,框體121內部的氧濃度係藉由氧濃度計181常態或定期地計測,且藉由濃度取得部5所取得。在該時間點,藉由氧濃度計181所計測。框體121內部之氧濃度係等於大氣中的氧濃度。 9 is a flowchart showing an example of maintenance processing performed by the
首先,投光控制部10係藉由光源部163來射出真空紫外線(步驟S21)。在此情況下,真空紫外線會自光源部163通過透光板162照射於框體121內部之氧分子,且在框體121內部產生臭氧。藉此,已附著於透光板162的異物能藉由所產生的臭氧所洗淨、分解或去除。再者,在步驟S21中,載置板151亦可移動至處理位置,且以已鄰近於透光板162的狀態下射出真空紫外線。在此情況下,異物能在狹窄的空間內效率佳地被洗淨、分解或去除。 First, the light
其次,投光控制部10係判定洗淨時間是否已經過(步驟S22)。在洗淨時間並未經過的情況下,投光控制部10係待機至洗淨時間經過為止。在洗淨時間已經過的情況下,投光控制部10係使來自光源部163的真空紫外線之射出停止(步驟S23)。 Next, the light
接著,排氣控制部3係藉由圖1之抽吸裝置173來排出框體121內部的氛圍(步驟S24)。另外,供氣控制部4係自圖1之配管171p、172p對框體121內部供給惰性氣體(步驟S25)。步驟S24、25之處理,無論是哪一個先開始皆可,也可同時開始。藉此,在框體121內部所產生的臭氧就得以通過抽吸裝置173排出,且得以防止臭氧擴散至曝光裝置100之周邊。之後,閉塞控制部1係使擋門131移動至 開放位置(步驟S26)。藉此,外部空氣會導入框體21內部,而框體121內部的氧濃度會增加。 Next, the
在此,濃度比較部6係判定框體121內部的氧濃度是否已增加至預定值以上為止(步驟S27)。在氧濃度並未增加至預定值以上為止的情況下,濃度比較部6係待機至氧濃度增加至預定值以上為止。在氧濃度已增加至預定值以上為止的情況下,排氣控制部3係使藉由抽吸裝置173所為的框體121內部之氛圍的排出停止(步驟S28)。另外,供氣控制部4係使自配管171p、172p往框體121內部的惰性氣體之供給停止(步驟S29)。步驟S28、S29之處理,無論是哪一個先開始皆可,也可同時開始。最後,閉塞控制部1係使擋門131移動至閉塞位置(步驟S30),且結束維護處理。 Here, the
(6)基板處理裝置 (6) Substrate processing device
圖10係顯示具備有圖1之曝光裝置100的基板處理裝置之整體構成的示意方塊圖。在以下所說明的基板處理裝置200中係進行利用嵌段共聚物之定向自組裝(DSA)的處理。具體而言,在基板W之被處理面上塗布有包含定向自組裝材料的處理液。之後,藉由在定向自組裝材料所產生的微相分離而在基板W之被處理面上形成有二種類之聚合物的圖案。二種類之聚合物中的一方圖案係藉由溶劑所去除。 FIG. 10 is a schematic block diagram showing the overall configuration of the substrate processing apparatus provided with the
將包含定向自組裝材料的處理液稱為DSA液。另外,將經由微相分離而形成於基板W之被處理面上的二種類之聚合物的圖案中之一方予以去除的處理稱為顯影處理, 將使用於顯影處理的溶劑稱為顯影液。 The treatment liquid containing the directed self-assembly material is called DSA liquid. In addition, a process of removing one of the two types of polymer patterns formed on the surface to be processed of the substrate W by microphase separation is called a development process, and a solvent used for the development process is called a developer.
如圖10所示,基板處理裝置200係除了曝光裝置100以外,還具備控制裝置210、搬運裝置220、熱處理裝置230、塗布裝置240及顯影裝置250。控制裝置210,例如是包含CPU及記憶體、或微電腦(microcomputer),用以控制搬運裝置220、熱處理裝置230、塗布裝置240及顯影裝置250之動作。另外,控制裝置210係將用以控制圖1之曝光裝置100的閉塞部130、升降部150、投光部160及置換部170之動作的指令提供給控制部110。 As shown in FIG. 10, the
搬運裝置220係一邊保持處理對象之基板W一邊將該基板W在曝光裝置100、熱處理裝置230、塗布裝置240及顯影裝置250之間進行搬運。熱處理裝置230係在藉由塗布裝置240所為的塗布處理以及藉由顯影裝置250所為的顯影處理之前後進行基板W之熱處理。 The conveying
塗布裝置240係藉由對基板W之被處理面供給DSA液,來進行膜之塗布處理。在本實施形態中,作為DSA液,係採用由二種類之聚合物所構成的嵌段共聚物。作為二種類之聚合物的組合,例如可列舉聚苯乙烯-聚甲基丙烯酸甲酯(polystyrene-polymethyl methacrylate:PS-PMMA)、聚苯乙烯-聚二甲基矽氧烷(polystyrene-polydimethylsiloxane:PS-PDMS)、聚苯乙烯-聚二茂鐵二甲基矽烷(polystyrene-poly(ferrocenyl dimethylsilane):PS-PFS)、聚苯乙烯-聚環氧乙烷(polyethylene oxide:PS-PEO)、聚苯乙烯-聚乙烯吡咯啶酮(polyvinylpyrrolidone:PS-PVP)、聚苯乙烯 -聚羥基苯乙烯(polyhydroxystyrene:PS-PHOST)、以及聚甲基丙烯酸甲酯-聚丙烯酸甲酯多面體聚矽氧烷(polymethyl methacrylate-polymethacrylate polyhedral oligomeric silsesquioxane:PMMA-PMAPOSS)等。 The
顯影裝置250係藉由對基板W之被處理面供給顯影液,來進行膜之顯影處理。作為顯影液之溶媒,例如可列舉甲苯(toluene)、庚烷(heptane)、丙酮(acetone)、丙二醇甲醚醋酸酯(propylene glycol monomethyl ether acetate:PGMEA)、丙二醇甲醚(propylene glycol monomethyl ether:PGME)、環己酮(cyclohexanone)、醋酸、四氫呋喃(tetrahydrofuran)、異丙醇(isopropyl alcohol:IPA)或氫氧化四甲銨(tetramethyl ammonium hydroxide:TMAH)等。 The developing
圖11係顯示藉由圖10之基板處理裝置200所為的基板W之處理之一例的示意圖。在圖11中係以剖視圖來顯示每次進行處理時所變化的基板W之狀態。在本例中係作為基板W被搬入於基板處理裝置200之前的初期狀態,如圖11中的(a)所示,以覆蓋基板W之被處理面的方式形成有基底層L1,在基底層L1上形成有例如由光阻(photoresist)所構成的導引圖案(guide pattern)L2。以下,使用圖10及圖11來說明基板處理裝置200之動作。 FIG. 11 is a schematic diagram showing an example of the processing of the substrate W by the
搬運裝置220係將處理對象之基板W依順序搬運至熱處理裝置230及塗布裝置240。在此情況下,在熱處理裝置230中,基板W之溫度被調整至已適於DSA膜L3之形成的溫度。另外,在塗布裝置240中,對基板W之被處理 面供給DSA液,且進行塗布處理。藉此,如圖11中的(b)所示,在並未形成有導引圖案L2的基底層L1上之區域,形成有由二種類之聚合物所構成的DSA膜L3。 The
其次,搬運裝置220係將形成有DSA膜L3的基板W,依順序搬運至熱處理裝置230及曝光裝置100。在此情況下,在熱處理裝置230中,藉由進行基板W之加熱處理,而在DSA膜L3發生微相分離。藉此,如圖11中的(c)所示,形成有由一方之聚合物所構成的圖案Q1以及由另一方之聚合物所構成的圖案Q2。在本例中,以沿著導引圖案L2的方式,配向地形成有線狀之圖案Q1及線狀之圖案Q2。 Next, the
之後,在熱處理裝置230中,基板W被冷卻。另外,在曝光裝置100中,對微相分離後的DSA膜L3之整體照射用以使DSA膜L3改質的真空紫外線,且進行曝光處理。藉此,能切斷一方之聚合物與另一方之聚合物之間的鍵結,且分離出圖案Q1和圖案Q2。 Thereafter, in the
接著,搬運裝置220係將藉由曝光裝置100所為的曝光處理後之基板W,依順序搬運至熱處理裝置230及顯影裝置250。在此情況下,在熱處理裝置230中,基板W被冷卻。另外,在顯影裝置250中,對基板W上的DSA膜L3供給顯影液,且進行顯影處理。藉此,如圖11中的(d)所示,圖案Q1被去除,最終在基板W上殘留圖案Q2。最後,搬運裝置220係從顯影裝置250回收顯影處理後的基板W。 Next, the conveying
(7)功效 (7) Efficacy
在本發明的曝光裝置100中係能以曝光模式和維護模式來切換動作模式。由於在曝光模式中基板W被曝光,因此由有機材料所構成的異物就會慢慢地附著於與處理室120相接觸的透光板162之部分。即便是在如此的情況下,仍能藉由在維護模式中產生於處理室120內部的臭氧,來分解或去除已附著於透光板162的異物。因此,維護操作員不需要頻繁地去除透光板162之異物。從而減低維護操作員的負擔。 In the
另外,由於得以縮短維護操作所需的時間,故而使曝光裝置100之運轉停止時間最小化。藉此,能改善曝光裝置100之運轉效率。更且,由於得以防止因異物所致的透光板162之模糊及混濁,且得以使透光板162之穿透性維持在較高的狀態下,所以即便是在曝光裝置100已長期間使用的情況下,仍得以防止曝光處理之效率及精度降低。此等的結果,能一邊減低維護操作員之負擔一邊長期維持曝光處理之效率及精度。 In addition, since the time required for maintenance operations can be shortened, the operation stop time of the
(8)其他實施形態 (8) Other embodiments
(a)在上述實施形態中,雖然使用DSA液作為處理液,但本發明係未被限定於此。亦可使用與DSA液不同的其他處理液。 (a) In the above embodiment, although the DSA liquid is used as the treatment liquid, the present invention is not limited to this. Other treatment fluids different from DSA fluids can also be used.
(b)在上述實施形態中,雖然真空紫外線之射出面係比基板W之被處理面更大,且進行基板W之全面曝光,但是本發明並未被限定於此。真空紫外線之射出面,既可比基板W之被處理面更小,也可射出不具有面狀之剖面而是 具有線狀之剖面的真空紫外線。在此情況下,藉由真空紫外線之射出面和基板W之被處理面相對地移動就得以對基板W之被處理面的整體照射真空紫外線。 (b) In the above embodiment, although the exit surface of the vacuum ultraviolet rays is larger than the surface to be processed of the substrate W, and the substrate W is fully exposed, the present invention is not limited to this. The exit surface of the vacuum ultraviolet rays may be smaller than the surface to be treated of the substrate W, or it may emit vacuum ultraviolet rays that do not have a planar cross section but have a linear cross section. In this case, the entire surface of the substrate W to be treated can be irradiated with vacuum ultraviolet rays by relatively moving the exit surface of the vacuum ultraviolet rays and the surface to be treated of the substrate W.
(c)在上述實施形態中,雖然是在曝光處理時對框體121內部供給惰性氣體,但本發明並未被限定於此。亦可在曝光處理時能夠充分地減低框體121內部之氧濃度的情況下,不對框體121內部供給惰性氣體。 (c) In the above embodiment, although the inert gas is supplied to the inside of the
(d)在上述實施形態中,雖然維護模式中的框體121內部之氧濃度為大氣中之氧濃度,但本發明並未被限定於此。維護模式中的框體121內部之氧濃度,既可比大氣中之氧濃度更高,也可為更低。 (d) In the above embodiment, although the oxygen concentration inside the
(9)請求項之各個構成要素與實施形態之各部的對應關係 (9) Correspondence between each component of the request item and each part of the embodiment
以下,雖然是針對請求項之各個構成要素與實施形態之各個構成要素的對應之例加以說明,但是本發明係未被限定於下述之例。 Hereinafter, although an example of correspondence between each component of the request item and each component of the embodiment is described, the present invention is not limited to the following examples.
在上述實施形態中,基板W為基板之例,曝光裝置100為曝光裝置之例,透光板162為窗構件之例,處理室120為處理室之例,光源部163為光源部之例。抽吸裝置173為排氣部之例,排氣控制部3為第一排氣控制部及第二排氣控制部之例,投光控制部10為第一投光控制部及第二投光控制部之例,配管171p、172p為供氣部之例。塗布裝置240為塗布處理部之例,熱處理裝置230為熱處理部之例,顯影裝置250為顯影處理部之例,基板處理裝置200 為基板處理裝置之例。 In the above embodiment, the substrate W is an example of a substrate, the
作為請求項之各個構成要素,亦能使用具有請求項所記載之構成或功能的其他各種之構成要素。 As each constituent element of the request item, other various constituent elements having the configuration or function described in the request item can also be used.
100‧‧‧曝光裝置 100‧‧‧Exposure device
110‧‧‧控制部 110‧‧‧Control Department
120‧‧‧處理室 120‧‧‧Processing room
121‧‧‧框體 121‧‧‧Frame
121a‧‧‧搬運開口 121a‧‧‧Transport opening
121b、141a‧‧‧開口部 121b, 141a‧‧‧ opening
122‧‧‧環狀構件 122‧‧‧ring member
123‧‧‧被覆構件 123‧‧‧Coated member
130‧‧‧閉塞部 130‧‧‧Occlusion Department
131‧‧‧擋門 131‧‧‧stop door
131a、s1、s2、s3‧‧‧密封構件 131a, s1, s2, s3
132、152‧‧‧連結構件 132、152‧‧‧Connecting member
133、153‧‧‧驅動裝置 133, 153‧‧‧ drive device
133a、133b、153a、153b‧‧‧位置感測器 133a, 133b, 153a, 153b ‧‧‧ position sensor
140‧‧‧遞送部 140‧‧‧Delivery Department
141‧‧‧支撐板 141‧‧‧support plate
142‧‧‧支撐銷 142‧‧‧Support pin
150‧‧‧升降部 150‧‧‧ Lifting Department
151‧‧‧載置板 151‧‧‧ Placement board
151a‧‧‧貫通孔 151a‧‧‧Through hole
160‧‧‧投光部 160‧‧‧Projection Department
161‧‧‧外殼 161‧‧‧Housing
162‧‧‧透光板 162‧‧‧Transparent board
163‧‧‧光源部 163‧‧‧Light Source Department
164‧‧‧電源裝置 164‧‧‧Power supply device
170‧‧‧置換部 170‧‧‧ Replacement Department
171p、172p、173p‧‧‧配管 171p, 172p, 173p‧‧‧ piping
171v、172v、173v‧‧‧閥 171v, 172v, 173v
173‧‧‧抽吸裝置 173‧‧‧Suction device
173a、173b‧‧‧歧管 173a, 173b ‧‧‧ Manifold
180‧‧‧計測部 180‧‧‧Measurement Department
181‧‧‧氧濃度計 181‧‧‧Oxygen concentration meter
182‧‧‧臭氧濃度計 182‧‧‧Ozone concentration meter
183‧‧‧照度計 183‧‧‧illuminance meter
p1、p2、p3‧‧‧連接埠 p1, p2, p3 ‧‧‧ port
W‧‧‧基板 W‧‧‧Substrate
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