TWI673748B - Apparatus for inspecting a substrate, method for inspecting a substrate - Google Patents

Abstract

An apparatus for inspecting a large-area substrate for display manufacturing is described. The device includes: a vacuum chamber; a substrate support member disposed in the vacuum chamber, wherein the substrate support member is configured to support a large area substrate for display manufacturing; and a first imaging type charged particle beam microscope, It is configured to generate a charged particle beam for inspecting a substrate supported by a substrate support, wherein the first imaging type charged particle beam microscope includes a deceleration electric field lens element of an objective lens.

Description

Equipment for inspecting substrate, method for inspecting substrate

This disclosure relates to an apparatus and a method for inspecting a substrate. The embodiments described herein are more particularly related to an apparatus and a method for inspecting substrates for display manufacturing, and more particularly for large area substrates for display manufacturing.

In many applications, it is necessary to inspect the substrate to monitor the quality of the substrate. For example, a glass substrate on which a layer of a coating material is deposited is manufactured for the display market. Since defects may occur, for example, during the processing of the substrate, such as during the coating process of the substrate, it is necessary to inspect the substrate to recheck the defects and monitor the quality of the display.

Displays are usually manufactured on large-area substrates, with growing substrate sizes. In addition, displays, such as thin-film transistor displays, are subject to continuous improvement. For example, Low Temperature Poly Silicon (LTPS) is a development in which low energy consumption and improved characteristics related to backlight can be realized.

The inspection of the substrate can be performed, for example, by an optical system. However, the low-temperature polycrystalline silicon grain structure, grain size, and surface morphology of the grains at the grain edges (topography) is particularly difficult to use the optical system for re-examination. This is because the grain size may be lower than the optical resolution, making the crystal grains invisible to the optical system. A small part of the substrate has also been inspected using a charged particle beam device in combination with surface etching. Surface etching can improve the contrast of grain boundaries, for example, but it involves cracking the glass substrate, so a small part of the substrate is used instead of the entire substrate for inspection. Therefore, it is impossible to continue processing the substrate after the inspection of the substrate, for example, to check the influence of the grain structure on the final product.

Therefore, under the premise that there is an increasing demand for display quality in the field of large-area substrates, there is a need for improved equipment and methods for inspecting large-area substrates.

According to an embodiment, an apparatus for inspecting a large-area substrate for display manufacturing is provided. The device includes: a vacuum chamber; a substrate support member disposed in the vacuum chamber, wherein the substrate support member is configured to support a large area substrate for display manufacturing; and a first imaging-type charged particle beam microscope ( imaging charged particle beam microscope) configured to generate a charged particle beam for inspecting a substrate supported by a substrate support, wherein the first imaging-type charged particle beam microscope includes a retarding electric field lens element (retarding) field lens component).

According to another embodiment, an apparatus is provided for inspecting a substrate, particularly a substrate having a large area for display manufacturing. The device includes: a vacuum chamber; a substrate support member disposed in the vacuum chamber, wherein the substrate support member provides a substrate receiving area, the substrate receiving area has a first connection along a first direction; A receiving area size; and a first imaging-type charged particle beam microscope and a second imaging-type charged particle beam microscope having a distance along the first direction, the distance being 30% to 70% of the size of the first receiving area.

According to yet another embodiment, a method for inspecting a large area substrate for display manufacturing is provided. The method includes: providing a large area of the substrate in a vacuum chamber; and generating a first charged particle beam with a first imaging-type charged particle beam microscope, wherein the first charged particle beam has a landing energy of 2keV or lower (landing energy) impact on the substrate.

2‧‧‧ Optical axis

3‧‧‧component symbol

20‧‧‧ cylinder

21‧‧‧First Chamber

22‧‧‧Second Chamber

23‧‧‧ Third Chamber

30‧‧‧ electron beam source

31‧‧‧ launcher

32‧‧‧ Beam Concentrator

60‧‧‧Magnetic lens element

62‧‧‧coil

63‧‧‧pole

64‧‧‧ pole piece

100‧‧‧ Equipment

110‧‧‧ substrate support

120‧‧‧vacuum chamber

121‧‧‧Inner width

121'‧‧‧Inner width

122‧‧‧ Wall

123‧‧‧Wall

130‧‧‧The first imaging-type charged particle beam microscope

131‧‧‧First optical axis

135‧‧‧distance

140‧‧‧Second imaging type charged particle beam microscope

141‧‧‧second optical axis

150‧‧‧x direction

151‧‧‧z

152‧‧‧y direction

160‧‧‧ substrate

210‧‧‧ substrate receiving area

220‧‧‧Width

410‧‧‧Displacement unit

420‧‧‧Vacuum Pump

430‧‧‧ Connection Department

431‧‧‧ Shock Absorber

432‧‧‧first coupling

433‧‧‧Second Coupling

440‧‧‧Pneumatic components

441‧‧‧foot

450‧‧‧Vibration Sensor

470‧‧‧Enhancement

500‧‧‧ charged particle beam device

510‧‧‧ biased unit

512‧‧‧ bias unit

513‧‧‧Ven filter

520‧‧‧Focus lens

530‧‧‧lower electrode

531‧‧‧ Power

540‧‧‧Two-stage bias system

550‧‧‧ Beam Restricted Aperture

560‧‧‧ Objective

561‧‧‧Magnetic lens element

562‧‧‧up electrode

570‧‧‧scan polarizer assembly

580‧‧‧ Beam Splitter

592‧‧‧beam bender

594‧‧‧ lens

596‧‧‧Filter

598‧‧‧ Detector

610‧‧‧The first charged particle beam

611‧‧‧ first beam position

620‧‧‧Second charged particle beam

621‧‧‧Second beam position

630‧‧‧Beam distance

650‧‧‧distance

690‧‧‧ dotted line

710‧‧‧y coordinate

720‧‧‧ the first y-coordinate

721‧‧‧second y-coordinate

722‧‧‧first projection axis

723‧‧‧second projection axis

724‧‧‧Center

725‧‧‧ Center

730‧‧‧y coordinates

740‧‧‧second y-coordinate

741‧‧‧first y-coordinate

750‧‧‧ third imaging type charged particle beam microscope

760‧‧‧Fourth imaging-type charged particle beam microscope

761‧‧‧distance

762‧‧‧distance

770‧‧‧ size

781‧‧‧distance

782‧‧‧distance

783‧‧‧distance

810‧‧‧ substrate width

820‧‧‧First District

821‧‧‧first width

822‧‧‧First defect

830‧‧‧Second District

831‧‧‧second width

832‧‧‧Second defect

900‧‧‧ Imaging Charged Particle Beam Microscope

902‧‧‧box

904‧‧‧box

910‧‧‧ dotted line

In the following description, including references to the drawings, disclosures will be presented in more detail and made accessible to those with ordinary knowledge in the technical field, in which: Figure 1 illustrates the embodiment described herein A side view of one of the devices for inspecting the substrate is shown.

Figures 2 and 3 show a top view of an apparatus for inspecting a substrate according to the embodiment described herein.

FIG. 4 shows a side view of an apparatus for inspecting a substrate according to an embodiment described herein, wherein the apparatus includes elements for reducing vibrations.

FIG. 5A illustrates a side view of an imaged charged particle beam according to an embodiment described herein.

5B and 5C illustrate schematic diagrams of a charged particle beam tilting out of an imaged charged particle beam according to an embodiment described herein.

6A to 6B illustrate a method for inspecting a substrate according to an embodiment described herein. One method.

Figures 7A-7D illustrate different configurations of imaging charged particle beams in a vacuum chamber according to the embodiments described herein.

Figures 8A-8C illustrate a method for inspecting a substrate according to the embodiments described herein.

Figures 9A-9C illustrate a method for inspecting a substrate according to the embodiment described herein, which uses a device including a single imaging type charged particle beam microscope.

Fig. 10 shows a flowchart showing the method described with reference to Figs. 6A and 6B.

Various exemplary embodiments of the present invention will now be described in detail. One or more examples are shown in the drawings. Examples are provided by way of explanation, not by limitation of the work. For example, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield additional embodiments. This disclosure contains such modifications and changes.

In the following description of the drawings, the same element symbol means the same element. Only the differences of the individual embodiments will be described. The structures shown in the drawings are not necessarily drawn to true scale, but are provided to provide a better understanding of the embodiments.

The term "substrate" as used herein encompasses both non-flexible substrates and flexible substrates, such as glass substrates or glass plates, and flexible substrates such as soft substrates (web ) Or foil. The substrate may be a coated substrate in which one or more thin layers of material are coated or deposited on the substrate, such as by a physical vapor deposition (PVD) process or a chemical vapor deposition process (CVD). .

According to some embodiments that can be combined with other embodiments described herein, the embodiments described herein relate to large-area substrates, particularly large-area substrates used in the display market.

According to some embodiments, the large-area substrate or the respective substrate support may have a size of at least 1.375 square meters. The size can range from about 1.375 square meters (1100 mm x 1250 mm, 5th generation) to about 9 square meters, especially from about 2 square meters to about 9 square meters or even up to 12 square meters . The so-called substrate or substrate receiving area provided for the structure, apparatus, and method according to the embodiments described herein can be a large-area substrate as described herein. For example, a large-area substrate or carrier can be the 5th generation corresponding to a substrate (1.1 m × 1.25 m) of about 1.375 square meters, and a substrate (1.95 m × 2.7.5 meters), 7.5 generations corresponding to a substrate of about 5.7 square meters (2.2 meters × 2.5 meters), 8.5 generations, or even a substrate (2.88 meters × 3.130 meters) corresponding to about 9 square meters 10th generation. Later generations such as the 11th and 12th generations and corresponding substrate areas can be implemented in a similar manner.

Considering the huge size of the substrates produced and processed in current display manufacturing technology, processing or testing the entire substrate without breaking the glass is a particular challenge. As the size of substrates (such as large-area substrates) continues to increase, larger vacuum chambers are used to process or test substrates. However, larger vacuum chambers are more sensitive to unwanted vibrations than smaller chambers. One or more vibrations of the vacuum chamber limit the resolution with which the substrate can be inspected, for example. In particular, substrate defects with a size smaller than the resolution of the inspection system will still not be seen and therefore cannot be detected.

FIG. 1 illustrates a method for inspecting a substrate according to an embodiment described herein. Side view of a device. The apparatus 100 includes a vacuum chamber 120. The device 100 further includes a substrate support 110 on which a substrate 160 can be supported. The apparatus 100 includes a first imaging-type charged particle beam microscope 130. In addition, the device may include a second imaging-type charged particle beam microscope 140. In the example shown in FIG. 1, the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 are disposed above the substrate support 110.

As shown in FIG. 1, the substrate support 110 extends along the x-direction 150. In the drawing of FIG. 1, the x direction 150 is a left-right direction. A substrate 160 is disposed on the substrate support 110. The substrate support 110 is movable along the x-direction 150 to displace the substrate 160 with respect to the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 in the vacuum chamber 120. Therefore, a region of the substrate 160 can be located under the first imaging-type charged particle beam microscope 130 or the second imaging-type charged particle beam microscope 140 for inspection. This area may contain a test target, such as an area to be tested, having, for example, grains or defects contained in or on a coating on a substrate. The substrate support 110 may also be movable along the y-direction (not shown) so that the substrate 160 can be moved along the y-direction, as discussed below. By appropriately displacing the substrate support 110 holding the substrate 160 in the vacuum chamber 120, the entire range of the substrate 160 can be inspected in the vacuum chamber 120.

The first imaging-type charged particle beam microscope 130 is spaced a distance 135 from the second imaging-type charged particle beam microscope 140 along the x-direction 150. In the embodiment shown in FIG. 1, the distance 135 is the distance between a center of the first imaging-type charged particle beam microscope 130 and a center of the second imaging-type charged particle beam microscope 140. In particular, the distance 135 is 150 along the x-direction by the first imaging belt The distance between a first optical axis 131 defined by the electron particle beam microscope and a second optical axis 141 defined by the second imaging-type charged particle beam microscope 140. The first optical axis 131 and the second optical axis 141 extend along a z-direction 151. In the drawing of FIG. 1, the z-direction 151 is a vertical direction orthogonal to the x-direction 150. The first optical axis 131 may be defined, for example, by the objective lens of the first imaging-type charged particle beam microscope 130. Similarly, the second optical axis 141 may be defined, for example, by the objective lens of the second imaging-type charged particle beam microscope 140. According to yet another embodiment that can be combined with other embodiments described herein, the distance 135 can also be defined as the center of the first imaging-type charged particle beam microscope 130 and the center of the second imaging-type charged particle beam microscope 140. Distance. The center of the imaging-type charged particle beam microscope may substantially correspond to the optical axis of the imaging-type charged particle beam microscope.

As further shown in FIG. 1, the vacuum chamber 120 has an inner width 121 along the x-direction 150. The inner width 121 may be a distance obtained when the vacuum chamber 120 is traversed from the wall 123 on the left-hand side of the vacuum chamber 120 to the wall 122 on the right-hand side of the vacuum chamber 120 in the x direction. One aspect of this disclosure relates to the size of the device 100, such as the x-direction 150. According to an embodiment, the distance 135 between the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 along the x-direction 150 may be at least 30 cm, such as at least 40 cm. According to another embodiment that can be combined with other embodiments described herein, the inner width 121 of the vacuum chamber 120 may fall between the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140. The distance is between 250% and 450% of 135.

The embodiments described herein, therefore, provide an apparatus for inspecting a substrate, particularly a large area substrate, using two imaging-type charged particle beam microscopes spaced apart from each other in a vacuum chamber. The substrate is entirely processed in the vacuum chamber. Management. In particular, the embodiments described herein do not require breaking the substrate or etching the surface of the substrate. Therefore, a high-resolution image of the defect and a good grain boundary contrast are provided, especially through an inspection system, whereby a large-area substrate can be measured online.

Compared with a vacuum chamber containing a single imaging-type charged particle beam microscope for inspecting a substrate, having two imaging-type charged particle beam microscopes provides the advantage of reducing the range of travel of the substrate during the inspection process. Thus, the size of the vacuum chamber, such as the inner width 121 of the vacuum chamber 120 (for example, along the x-direction 150 as shown in Fig. 1), can be reduced compared to a device having a single imaging type charged particle beam microscope. For example, referring to the structural configuration shown in FIG. 1, a defect (not shown) may be located on the right-hand side portion of the substrate 160, for example, on the right-hand side of the second optical axis 141. According to the embodiment described herein, the substrate 160 may be displaced in the vacuum chamber 120 to place a defect under the second imaging-type charged particle beam microscope 140, so the defect can be detected by the second imaging-type charged particle beam microscope 140. an examination. In contrast, if the device 100 includes a first imaging-type charged particle beam microscope 130 but does not include a second imaging-type charged particle beam microscope 140, the substrate will be displaced along the x-direction 150 to the left by a large distance. To place the defect at a position inspected by the first imaging-type charged particle beam microscope 130. However, the vacuum chamber 120 shown in FIG. 1 is too narrow in the x direction for placing defects under the first imaging-type charged particle beam microscope 130. Thus, a vacuum chamber having a large inner width along the x-direction will be required to allow inspection of defects at arbitrary positions on the substrate 160.

An advantage of having a vacuum chamber with a reduced size, as provided by the embodiments described herein, is that one or more vibrations of the vacuum chamber can be reduced. As a result, the degree of vibration increases as a function of the size of the vacuum chamber. Thus, the amplitude of the substrate vibration can also be advantageously reduced. In particular, the implementations described herein For example, the amplitude of the substrate vibration may be 10 nm or less, such as 5 nm or less.

Some embodiments described herein provide an imaging-type charged particle beam microscope in a vacuum chamber or vacuum chamber. For example, the apparatus 100 shown in FIGS. 9A to 9C provides a single imaging-type charged particle beam microscope 900. Compared with traditional charged particle beam devices used to inspect large-area substrates in a vacuum environment (such as an electron beam tester with a field of view of 10 cm or greater), imaging-type charged particle beam microscopes provide higher resolution degree. In addition, an image of a part of a large-area substrate can be produced, and an electron beam tester having a large field of view generally does not produce an image of a part of a large-area substrate.

An imaging-type charged particle beam microscope, as used herein, may be adapted to generate a low-energy charged particle beam having a landing energy of 2 keV or lower, especially 1 keV or lower, such as 100 eV to 800 eV. Compared with high-energy beams, low-energy beams do not penetrate deeply into the substrate, and thus can provide more and better information about thin layers (such as low-temperature polycrystalline silicon layers) deposited on the substrate.

An imaging-type charged particle beam microscope that provides high-resolution inspection of substrates at low landing energy allows non-destructive inspection of defects on substrates. Thus, the embodiments described herein allow testing of the effects of defects on substrate function. For example, after inspecting a defect on a substrate, such as a substrate for display manufacturing, the embodiments described herein allow testing whether the defect destroys the function of the display. That is, it can be evaluated whether the defect is a "killer defect" or whether the display is functional even if the defect exists. Thus, since the substrate can be further processed after a non-destructive test is performed at a low energy, a kill-ratio analysis of defects can be performed.

However, some embodiments having a first imaging-type charged particle beam microscope and a second imaging-type charged particle beam microscope, as described herein, provide a comparison with embodiments having a single imaging-type charged particle beam microscope. Higher throughput because the substrate can be inspected in parallel by a first imaging-type charged particle beam microscope and by a second imaging-type charged particle beam microscope. For example, a first defect on a substrate can be inspected by a first imaging-type charged particle beam microscope, and a second defect can be inspected by a second imaging-type charged particle beam microscope, where the first defect and the second defect are inspected Departments proceed in parallel.

According to some embodiments that can be combined with other embodiments described herein, the imaging-type charged particle beam microscope can be a scanning electron microscope (SEM), in which images are provided at a relatively high resolution, the The resolution is, for example, 15 nm or less, or even lower.

An imaging-type charged particle beam microscope, as mentioned herein, such as an SEM, may have a working distance in the range of 0.5 to 5 mm. The distance from the lower edge of the column of the imaging-type charged particle beam microscope to the substrate or the substrate support can be in the range of 6 to 10 cm. The field of view of the imaging-type charged particle beam microscope can be less than 1 mm. The imaging-type charged particle beam microscope is applicable to generate a low-energy charged particle beam having a landing energy of 2 keV or lower, more particularly 1 keV or lower, such as an electron beam. In contrast, the device for pixel testing with an electron beam may have a field of view of 10 cm or more, and may be suitable for generating a charged particle beam having a land energy of about 10 keV. In addition, the device for pixel testing with an electron beam may not be configured for imaging a substrate, and an imaging-type charged particle beam microscope, as described herein, provides an area of the substrate being inspected Image.

Especially for embodiments with reduced vacuum chamber size (eg, by two imaging-type charged particle beam microscopes), the reduced degree of vibration in the vacuum chamber facilitates the use of imaging-type charged particle beam microscopes for inspecting substrates. Since the amplitude of the vibration of the vacuum chamber may be 10 nm or less, such as 5 nm or less, according to the embodiments described herein, a charged particle beam device having a high resolution, for example, 5 nm or less The imaging-type charged particle beam microscope with a high resolution can be used to inspect a substrate. In contrast, in a vacuum chamber where the vibration amplitude of the substrate and the charged particle beam relative to each other is, for example, greater than 10 nanometers, the use of an imaging-type charged particle beam microscope as described herein may not be meaningful because The overall resolution will be deteriorated by the vibration in the system.

In view of the above, the embodiments described herein provide a reduced degree of vibration of the substrate and the imaging-type charged particle beam microscope (eg, a SEM) relative to each other to, for example, facilitate the use of a high-resolution charged particle beam device to inspect the substrate . An improved apparatus for testing and an improved imaging of the substrate are then provided. The embodiments described herein can be used, for example, for critical dimension (CD) analysis or defect review (DR). The embodiments described herein provide various features, aspects, and details that make high-resolution imaging using large-area substrates possible (eg, by providing a low-voltage, high-resolution electron beam test in a vacuum chamber).

8A-8C illustrate a method for inspecting a substrate 160 according to the embodiment described herein. In FIGS. 8A to 8C of the top view of the providing device 100, the x-direction 150 and a y-direction 152 are indicated. In the top views of FIGS. 8A to 8C, the x-direction 150 is a left-right direction, and the y-direction 152 is a vertical direction.

As shown in FIGS. 8A to 8C, the substrate 160 has a substrate width 810 along the x-direction 150. According to an embodiment, along the x direction 150, the first imaging formula The distance 135 between the charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 may fall within a range of 30% to 70% of the substrate width 810. In the exemplary device shown in Figures 8A-8C, the distance 135 is approximately 50% of the substrate width 810. According to another embodiment capable of being combined with other embodiments described herein, the inner width 121 of the vacuum chamber 120 may fall within a range of 130% to 180% of the substrate width 810. In the exemplary embodiment shown in FIGS. 8A to 8C, the inner width 121 is about 150% of the substrate width 810.

The substrate 160 shown in FIGS. 8A to 8C can be regarded as having two regions, namely a first region 820 and a second region 830, where the first region 820 is located on the left side of the second region 830. In the examples shown in FIGS. 8A to 8C, the first region 820 and the second region 830 are rectangles having the same size. Specifically, the first region 820 has a first width 821 along the x-direction, and the second region 830 has a second width 831 along the x-direction, where the first width 821 is equal to the second width 831. Therefore, in the exemplary substrate 160 shown in FIGS. 8A to 8C, the substrate width 810 is twice as large as the first width 821, and therefore is twice as large as the second width 831. In particular, the first width 821, the second width 831, and the distance 135 between the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 can be made equal.

Regarding the exemplary embodiment shown in FIGS. 8A to 8C, it is regarded as a test target, for example, a region to be tested, a defect or a grain structure, which is located on the substrate 160 by the first In the first region 820 inspected by the imaging-type charged particle beam microscope 130, a test target, such as another region to be tested, having a defect or a grain structure, is located on the substrate 160 and can be charged by the second imaging-type. In the second region 830 examined by the particle beam microscope 140. So in order to be able to measure For any test target or test area of the test substrate 160, that is, the test target or test area (or the entire surface of the substrate 160) within the entire surface of the substrate, the range in which the substrate 160 moves along the x direction 150 is, for example, the substrate width 810 About 150%. Therefore, the inspection of the test target at any position on the substrate 160 can be performed in the vacuum chamber 120 shown in FIGS. 8A to 8C. The vacuum chamber 120 has an internal width 121 of about 150% of the substrate width 810.

8A to 8C exemplarily show a first defect 822 and a second defect 832 on the substrate 160, where the first defect 822 is located in the first region 820 and the second defect 832 is located in the second region 830. In particular, as shown, the first defect 822 is located near the left outer edge of the substrate 160, and the second defect 832 is located near the right outer edge of the substrate 160.

The first defect 822 located in the first region 820 is inspected by the first imaging-type charged particle beam microscope 130. Then, the substrate 160 is displaced in the vacuum chamber 120 to place the first defect 822 under the first imaging-type charged particle beam microscope 130. FIG. 8B illustrates the substrate 160 after the displacement, wherein the first defect 822 is directly placed under the first imaging-type charged particle beam microscope 130. The first defect 822 can then be inspected by the first imaging-type charged particle beam microscope 130. The inspection of the first defect 822 may include directing a first charged particle beam generated by the first imaging-type charged particle beam microscope 130 onto the substrate 160, as described below (cf., for example, FIG. 6A).

After the first defect 822 is inspected by the first imaging-type charged particle beam microscope 130, the inspection device may inspect the second defect 832. The second defect 832 located in the second region 830 is inspected by the second imaging-type charged particle beam microscope 140. Then, starting from the configuration shown in FIG. 8B, the substrate 160 is displaced The second defect 832 is placed below the second imaging-type charged particle beam microscope 140. FIG. 8C illustrates the substrate 160 after the displacement, in which the second defect 832 is placed below the second imaging-type charged particle beam microscope 140. Then, the second defect 832 can be inspected by the second imaging-type charged particle beam microscope 140. The inspection of the second defect 832 may include directing a second charged particle beam generated by the second imaging-type charged particle beam microscope 140 onto the substrate 160, as described below (cf., for example, FIG. 6B).

According to various embodiments, in particular an embodiment operating a device for testing a large-area substrate for display manufacturing with an imaging-type charged particle beam microscope, the device for inspection can be supplied to a file folder, wherein The coordinates of the defect are provided. For example, the coordinates of the defect can be generated by a previous inspection of a large-area substrate, in which the pixels are tested with an electron beam, and no image is generated. Known defects can be provided in a map of the substrate, that is, the coordinates of the substrate are known for a system operating to inspect a large area substrate with, for example, a SEM. The inspection device can then image a region containing a defect with a first imaging-type charged particle beam microscope (for example, a first SEM) or a second imaging-type charged particle beam microscope (for example, a second SEM). By providing a first imaging-type charged particle beam microscope and a second imaging-type charged particle beam microscope, throughput can be increased and / or the number of defects for placing defects in the first or second imaging-type charged particle beam microscope can be reduced. Displacement of the lower substrate. If the distance between the first and second imaging-type charged particle beam microscopes is about 50% of the width of the substrate receiving area along the respective directions, the displacement of the substrate can be particularly reduced.

According to yet another option of an apparatus for testing a large-area substrate for display manufacturing with an imaging-type charged particle beam microscope, the apparatus for inspection can be supplied with a coordinate drawing for inspection of a low-temperature polycrystalline silicon process. For example In other words, one or more predetermined coordinates can be provided, and additionally or alternatively, one or more random coordinates can be provided. The low-temperature polycrystalline silicon grain structure is imaged near these coordinates (predetermined and / or random), and the low-temperature polycrystalline silicon process can be characterized by one or more parameters generated by imaging-type charged particle beam microscopy imaging . In addition, additionally or alternatively, the consistency of one or more parameters can be evaluated by comparing different coordinates, which may be provided in a drawing.

The embodiments shown in FIGS. 8A to 8C allow inspection of test targets, such as defects, arranged at any position on the substrate 160 in the vacuum chamber 120. The vacuum chamber includes two imaging-type charged particle beam microscopes, and the vacuum chamber The inner width 121 of 120 ranges from 130% to 180% of the substrate width. As discussed above, having two imaging-type charged particle beam microscopes advantageously provides a reduced vacuum chamber width at least along the x direction compared to a vacuum chamber containing a single imaging-type charged particle beam microscope for inspecting a substrate. 9A-9C illustrate an embodiment in which the same substrate 160 as shown in FIGS. 8A-8C is inspected using an embodiment of the apparatus 100 including a single imaging-type charged particle beam microscope 900. Since both the first defect 822 and the second defect 832 are inspected by the imaging-type charged particle beam microscope 900, the substrate 160 along the x-direction 150 places the first defect 822 and the second defect 832 in the imaging-type charged particle beam. The distance moved under the microscope 900 is increased compared to the images of FIGS. 8A to 8C. Accordingly, the inner width 121 'of the vacuum chamber 120 shown in Figs. 9A to 9C is larger than the inner width 121 of the vacuum chamber 120 shown in Figs. 8A to 8C. In particular, since it is provided to allow a single imaging type charged particle beam microscope 900 to be used to inspect defects at any position on the substrate 160, the inner width 121 'of the vacuum chamber 120 shown in FIGS. 9A to 9C is at least about the substrate width 810 200%. Figures 8A ~ 8C The range of the vacuum chamber shown is indicated by dashed lines 910 in Figures 9A-9C. As shown in the figure, for the inspection of the first defect 822 and the second defect 832 using the single imaging type charged particle beam microscope 900 shown in FIGS. 9A to 9C, the vacuum chamber shown in FIGS. 8A to 8C is along the x direction. 150 will be too narrow. In view of the foregoing, according to an embodiment, an apparatus for inspecting a substrate, particularly a substrate for manufacturing a display is provided. The device includes a vacuum chamber, a substrate support disposed in the vacuum chamber, a first imaging-type charged particle beam microscope, and a second imaging-type charged particle beam microscope.

The device may be an inline device or part of an inline substrate processing system. A linear processing system may include one or more additional devices for processing substrates, where substrates may be transported from one device to a subsequent device through the linear processing system. For example, the linear processing system may include another chamber. For a substrate transport path of the linear processing system, it is disposed downstream of the vacuum chamber described herein. The substrate may be transported, for example, from a vacuum chamber to another chamber by a displacement unit as described herein for further processing of the substrate. In particular, according to the embodiments described herein, the substrate is processed and transported entirely, that is, the substrate is not broken. Testing of the substrate can be undamaged, such as unetched portions of the substrate, which can worsen the substrate that is additionally used in a file device. For example, another chamber may be selected from the group consisting of a processing chamber, another test chamber, a deposition chamber, and a display assembly chamber.

According to some embodiments, the device for inspecting a large-area substrate for display manufacturing can be a line-type device, that is, the device can be provided in-line with a previous test or processing program, and with another subsequent test Or the process is provided on a line, the device may include a load gate for The substrate is loaded and unloaded in a vacuum chamber imaged with an imaging-type charged particle beam microscope (eg, an SEM). Because the charged particle beam has a low energy of 2 keV or lower for imaging on the substrate, the structure provided on the substrate is not damaged. The substrate can then be provided for additional processing in a display manufacturing plant. As understood herein, the number of substrates to be tested can be 10% to 100% of the total number of substrates in a display manufacturing plant. Thus, even if an apparatus for inspecting and containing an imaging-type charged particle beam microscope can be provided as a linear tool, there is no need to test 100% of the substrate on the production line.

The vacuum chamber may contain one or more valves, which may connect the vacuum chamber to another chamber, which is particularly suitable if the device is a linear device. After the substrate has been guided into the vacuum chamber, the one or more valves can be closed. It is then possible to control the atmosphere in the vacuum chamber by, for example, generating a technical vacuum with one or more vacuum pumps. One advantage of inspecting a substrate in a vacuum chamber compared to, for example, atmospheric pressure is that the vacuum environment facilitates inspection of the substrate using a low-energy charged particle beam. For example, a low-energy charged particle beam can have a landing energy of 2 keV or lower, especially 1 keV or lower, such as 100 eV to 800 eV. Compared with high-energy beams, low-energy beams do not penetrate deeply into the substrate and thus can provide more and better information about, for example, coatings on the substrate.

The substrate support member provides a substrate receiving area. The term "substrate receiving area", as used herein, can include the maximum area that a substrate support can use to receive a substrate. In other words, the substrate support may be suitable for receiving a substrate having the same space size as the substrate receiving area, or suitable for receiving a substrate having one or more space sizes smaller than the substrate receiving area, so the substrate is mounted Within the substrate receiving area. FIG. 2 illustrates an embodiment of the device 100, in which the substrate support 110 provides A substrate receiving area 210. In the exemplary embodiment shown in FIG. 2, the substrate receiving area 210 is rectangular as indicated by a dotted line. Therefore, the substrate receiving area 210 can be adapted to receive a rectangular substrate (not shown) having the same length and width (or smaller length and width) than the substrate receiving area 210 shown in FIG. 2. As an example, FIG. 3 shows a rectangular substrate 160 provided on the substrate support 110, wherein the size of the substrate 160 shown in FIG. 3 is substantially the same as the size of the substrate receiving area 210 shown in FIG. . In particular, the length and width of the substrate 160 shown in FIG. 3 are substantially the same as the length and width of the substrate receiving region 210 shown in FIG. 3, respectively. In other words, additionally or alternatively, the substrate has a length and a width of 90% to 100% of the substrate receiving area, respectively.

The substrate receiving area has a size of a first receiving area along a first direction. With regard to the drawings described herein, the first direction may mean the x-direction 150. The first direction may be parallel to the substrate support. The substrate support may be displaced in a first direction. The first receiving area size of the substrate receiving area may include a range, width, length, or diameter of the substrate receiving area along the first direction. Alternatively or additionally, the first receiving area size may mean a maximum width of the substrate that can be received by the substrate support in the first direction. For example, referring to the device shown in FIG. 2, the first receiving area size of the substrate receiving area along the first direction may mean the width 220 of the substrate receiving area 210 along the x direction 150. The width 220 may correspond to a maximum width of the substrate 150 that can be received by the substrate support 110 along the x-direction 150. As an example, the substrate 160 shown in FIG. 3 has a substrate width 810 along the x-direction 150. The substrate width 810 is substantially the same as the width 220 of the substrate receiving region 210 shown in FIG.

The first imaging-type charged particle beam microscope and the second imaging-type charged particle beam microscope have a distance along the first direction, and the distance is in the first section of the substrate receiving area. The size of a receiving area ranges from 30% to 70%. This distance along the first direction may more particularly fall within a range of 40% to 60% of the size of the first receiving area, such as about 50% of the size of the first receiving area. For example, referring to the embodiment shown in FIG. 2, the distance along the first direction may mean the distance between the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140. 135. In the exemplary embodiment shown in FIG. 2, the distance 135 is about 50% of the width 220 of the substrate receiving area 210.

The distance along the first direction may be a distance from a center of a first imaging-type charged particle beam microscope to a center of a second imaging-type charged particle beam microscope. The first imaging-type charged particle beam microscope may define a first optical axis, and the second imaging-type charged particle beam microscope may define a second optical axis. Additionally or alternatively, the distance along the first direction may be the distance between the first optical axis and the second optical axis. The first optical axis may be parallel to the second optical axis. The first optical axis and / or the second optical axis may be perpendicular to the first direction and / or the substrate support.

The substrate support may be movable in a vacuum chamber relative to the first imaging-type charged particle beam microscope and / or relative to the second imaging-type charged particle beam microscope. According to an embodiment that can be combined with other embodiments described herein, the second imaging-type charged particle beam microscope is at a distance of at least 30 cm from the first imaging-type charged particle beam microscope, and more particularly at least 40 cm. Distance, for example about 50% of the size of the first receiving area. There is a minimum distance between the first imaging-type charged particle beam microscope and the second imaging-type charged particle beam microscope, which is greater than one of the imaging-type charged particle beam microscopes (for example, two SEMs) that are only redundantly repeated two times. One of the advantages of distance is that the traveling distance of the substrate inspected by the equipment is reduced. This allows the size of the vacuum chamber to be reduced, so that the vibration of the vacuum chamber can also be advantageously reduced.

The reduction in size of a vacuum chamber is of particular interest for large-area substrates and / or substrates for display manufacturing. According to some embodiments that can be combined with other embodiments described herein, a large-area substrate or a substrate receiving area as described in this disclosure may have a size of at least 1.375 square meters. The size can range from about 1.375 square meters (1100 mm x 1250 mm, 5th generation) to about 9 square meters, especially from about 2 square meters to about 9 square meters or even up to 12 square meters . The so-called substrate or substrate receiving area provided for the structure, apparatus, and method according to the embodiments described herein can be a large-area substrate as described herein. For example, a large-area substrate or carrier can be the 5th generation corresponding to a substrate (1.1 m × 1.25 m) of about 1.375 square meters, and a substrate (1.95 m × 2.7.5 meters), 7.5 generations corresponding to a substrate of about 5.7 square meters (2.2 meters × 2.5 meters), 8.5 generations, or even a substrate (2.88 meters × 3.130 meters) corresponding to about 9 square meters 10th generation. Later generations such as the 11th and 12th generations and corresponding substrate areas can be implemented in a similar manner. The substrate size generation is considered to provide a fixed industry standard, even though a 5th generation substrate may have slight dimensional deviations from one display manufacturer to another. Embodiments of the device for testing may, for example, have a fifth-generation substrate support or a fifth-generation substrate receiving area, so that many display manufacturers' fifth-generation substrates can be supported by the support. The same application applies to other substrate size generations.

In view of the size of a large-area substrate, according to embodiments that can be combined with other embodiments described herein, the vacuum chamber has a maximum first internal dimension along the first direction, that is, the first internal dimension is limited . For example, with respect to FIG. 2, the first internal dimension may mean an internal width 121 of the vacuum chamber 120 along the x-direction 150. The first internal dimension may include at least one of the following: A distance from a first wall of the chamber to a second wall of the vacuum chamber; a dimension of an inner portion of the vacuum chamber along a first direction; a width, length, or width of the vacuum chamber along the first direction. The first internal dimension of the vacuum chamber may fall between 250% and 600% of the distance between the first imaging type charged particle beam microscope and the second imaging type charged particle beam microscope along the first direction. In the range of 260% to 370%. Alternatively or additionally, the first internal size of the vacuum chamber may fall within a range of 130% to 180% of the size of the first receiving area of the substrate receiving area, and more particularly 140% to 170% of the size of the first receiving area. Or 150% to 180%, and more specifically 150% to 160%.

The first imaging-type charged particle beam microscope and / or the second imaging-type charged particle beam microscope may be configured to be along a direction perpendicular to the substrate support and / or perpendicular to the first direction. For example, in the device shown in FIG. 4, the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 extend along the z-direction 151, that is, perpendicular to the x-direction 150 and the y-direction 152, wherein the xy plane is parallel to the substrate support 110. Alternatively, the first imaging-type charged particle beam microscope and / or the second imaging-type charged particle beam microscope may be tilted with respect to the substrate support and / or the first direction. The first imaging-type charged particle beam microscope and / or the second imaging-type charged particle beam microscope may extend along a direction that forms an angle with the first direction, wherein the angle is different from 90 degrees. In particular, the angle may fall in the range of 60 to 90 degrees, and more particularly 75 to 90 degrees. According to yet another embodiment capable of being combined with other embodiments described herein, the barrel of the imaging-type charged particle beam microscope may be configured to be perpendicular to the substrate support, and the imaging-type charged particle beam microscope optics may be configured to To tilt the charged particle beam, for example, an angle tilted up to 20 °. With a charged particle beam tilted relative to the substrate surface normal, Enough for 3D imaging of surface topography, or even high resolution (ie, one resolution of 10 nm or less). Further details of the tilted charged particle beam can be understood with reference to FIGS. 5B and 5C.

FIG. 4 illustrates a side view of an apparatus for inspecting a substrate according to an embodiment described herein. The device includes a displacement unit 410. The displacement unit 410 is adapted to displace the substrate support member along a first direction, for example, along the x direction 150 to place the substrate support member 110 under the first imaging type charged particle beam microscope 130 and / or the second imaging type Below the charged particle beam microscope 140. The displacement unit 410 may be adapted to move the substrate support 110 back and forth along the x direction 150 (that is, toward the right in FIG. 4 and toward the left in FIG. 4). According to embodiments that can be combined with other embodiments described herein, the device described herein further includes a displacement unit, such as, for example, the displacement unit 410 shown in FIG. 4. The displacement unit may be adapted to displace the substrate support in a first direction. The displacement unit 410 may include, for example, a plurality of linear actuators (not shown) on which the substrate support 110 is mounted. Alternatively or additionally, the displacement unit may, for example, include a magnetic guidance system (not shown) for guiding the substrate support 110 along the x-direction 150. In the schematic diagram shown in FIG. 4, the displacement unit 410 is disposed in the vacuum chamber 120. Alternatively, part of the displacement unit 410 may extend outside the vacuum chamber 120, which is particularly applicable if the device 100 is coupled to a loading chamber or a line-type device. A displacement unit 410 extending outside the vacuum chamber 120 may be adapted to transport the substrate support 110 into and out of the vacuum chamber 120. For example, the displacement unit 410 may extend outside the vacuum chamber 120 on the right-hand side of the vacuum chamber 120 and on the left-hand side of the vacuum chamber 120. Thus, the substrate support 110 may be moved into the vacuum chamber 120 by the displacement unit 410 from the left side, and may be moved out of the vacuum chamber 120 to the right side by the displacement unit 410, for example.

The displacement unit may be adapted to displace the substrate support from a position close to a first end or wall of a vacuum chamber to a position close to a second end or wall of the vacuum chamber along the first direction. The displacement unit may have a displacement range along the first direction, wherein the displacement unit may be adapted to displace the substrate support to any target coordinates within the displacement range.

The apparatus shown in FIG. 4 may further include another displacement unit (not shown), which is suitable for displacing the substrate support 110 into the vacuum chamber 120 along the y-direction 152. The displacement unit 410 and the other displacement unit can form a common displacement system, which is suitable for moving the substrate support 110 in an x-y plane. Therefore, by appropriately displacing the substrate support 110 holding the substrate in the xy plane, any region of the substrate provided on the substrate support 110 can be placed under the first imaging-type charged particle beam microscope 130 or the second Underneath the imaging-type charged particle beam microscope 140, inspection of a target portion is performed. The substrate support may be fixed to the other displacement unit, or to a common displacement system formed by the displacement unit and the other displacement unit. The other displacement unit may be adapted to displace the substrate support relative to the first imaging-type charged particle beam microscope and / or relative to the second imaging-type charged particle beam microscope. The other displacement unit may have a displacement range along the first direction, wherein the displacement range may fall within a range of 150% to 180% of a substrate width or a respective width of the substrate receiving area.

The range of displacement along the first direction may be greater than the distance of the substrate receiving area along the first direction according to some embodiments. Whereas, according to some embodiments, one or more targets can also be provided on the substrate support, wherein the one or more targets can be placed in a charged particle beam of an imaging-type charged particle beam microscope (for example, a SEM) Below the fact that this may be beneficial. For example, can provide a pitch A pitch target, which can be seen by imaging the target with, for example, an SEM, has a defined pitch. Then, the SEM can be corrected so that the pitch in the image corresponds to the true pitch of the target. As another example, a Faraday cup can be provided on the substrate support, so that the Faraday cup can be provided below the charged particle beam to measure the beam current. As yet another example, a step target can be provided, which has a defined complex structure of different heights. First-order targets can be used to characterize the focal position of a probe that is scanned over a substrate for imaging.

In addition, a displacement system may further include a z stage for displacing the substrate support in a z direction, that is, changing the distance of the substrate support relative to one or more imaging-type charged particle beam microscopes. The z-stage allows the substrate to be placed at the correct working distance for imaging by an imaging-type charged particle beam microscope. For example, the z-platform can be provided by two wedges sliding above each other, where the height is changed by the amount the wedges overlap. Changing the z position with a z platform containing two wedges allows the substrate to perform z positioning in a way that reduces the generation of vibrations in the system.

The apparatus 100 shown in FIG. 4 further includes a vacuum pump 420 suitable for generating a vacuum in the vacuum chamber 120. The vacuum pump 420 is fluidly coupled to the vacuum chamber 120 via a connection portion 430. The connection portion 430 is, for example, a pipe, and the connection portion 430 is connected to the vacuum pump 420 and the vacuum chamber. Via the connection portion 430, the vacuum pump 420 can vacuum the vacuum chamber. Thus, a pressure of 10 ^-1 mbar or lower can be provided in the vacuum chamber. During operation, the vacuum pump 42 may vibrate. The mechanical vibration of the vacuum pump 420 may be transmitted to the vacuum chamber 120 via the connection portion 430 installed on the vacuum pump 420 and the vacuum chamber 120. As a result, unwanted vibrations may be transmitted to the vacuum chamber 120 and / or to a substrate (not shown) in place on the substrate support 110. In order to dampen the vibration of the vacuum pump 420, a shock absorber 431 is included in the device 100, and more particularly in the connecting portion 430. As shown, the shock absorber 431 is coupled to the vacuum pump 420 via a first coupling 432, and is coupled to the vacuum chamber 120 via a second coupling 433. The mechanical vibration of the vacuum pump 420 can be suppressed by the shock absorber 431 before the mechanical vibration can be transmitted to the vacuum chamber 120. Therefore, compared with a device that does not include a shock absorber 431, the reduced amount of vibration is transmitted to the vacuum chamber 120. According to some embodiments that can be combined with other embodiments described herein, an apparatus for inspection of a display may include a shock absorber, which is adapted to suppress vibrations, particularly mechanical vibrations, generated by a vacuum chamber by a vacuum generating device. The vacuum generating device may be a vacuum pump as described herein.

The apparatus 100 shown in FIG. 4 may include additional vacuum pumps (not shown), such as one or more additional connected to a first imaging-type charged particle beam microscope and / or a second imaging-type charged particle beam microscope. Vacuum pump. For any such additional vacuum pump, an associated shock absorber may be included in the device. The function of another vacuum shock absorber is similar to that of the vacuum shock absorber 431 as described herein.

The vacuum chamber 120 shown in FIG. 4 is fixed on a pneumatic element 440. The pneumatic element 440 is suitable for reducing the vibration of the vacuum chamber 120 in a pneumatic manner. In the exemplary embodiment shown in FIG. 4, the vacuum chamber 120 is fixed on the supporting leg 441, so the vacuum chamber 120 is located in a raised position above the ground. As shown, each leg of the vacuum chamber 120 includes a pneumatic element. A pneumatic element according to the embodiments described herein can be adapted to pneumatically suppress vibrations introduced into a vacuum chamber. According to yet other capabilities and other properties described herein In combination with embodiments, in addition to or instead of pneumatic components, polymer or rubber components can also be used to reduce vibration, such as by supporting the vacuum chamber 120 or feet 441 on one or more polymers Element or one or more rubber elements.

A pneumatic element, as described herein, may include a compartment containing pressurized air or pressurized gas. External vibrations, such as, for example, ground vibrations, may be transmitted to the feet 441. Before the external vibration can be transmitted to the vacuum chamber 120, the external vibration can be absorbed by the pneumatic element 440, especially by pressurized air or gas. Thus, the pneumatic element 440 may isolate the vacuum chamber 120 from external vibrations, or at least may reduce the amount of external vibrations transmitted to the vacuum chamber 120.

In the side view of Figure 4, two legs 441 and two associated pneumatic elements 440 are shown. The device 100 may have additional feet and / or additional pneumatic elements that may not be seen in the side view of FIG. 4. For example, the device 100 may be fixed on four feet and may have four pneumatic elements, wherein each foot is fixed on a pneumatic element.

FIG. 4 further illustrates a vibration sensor 450 suitable for measuring vibration of the vacuum chamber 120. For example, the vibration sensor may be adapted to measure the amplitude and / or frequency of the vibration of the vacuum chamber 120. The vibration sensor 450 may be further adapted to measure vibration in one or more directions. The vibration sensor 450 may include a light source (not shown) adapted to generate a light beam. The light beam may be directed onto the vacuum chamber 120, such as a wall of the vacuum chamber 120, at least a portion of which may be reflected from the vacuum chamber. The vibration sensor 450 may further include a detector (not shown) for detecting the light beam after the light beam is reflected from the vacuum chamber 120. Therefore, the information about the vibration of the vacuum chamber 120 can be collected by the vibration sensor 450. The vibration sensor may be an interferometer.

According to some embodiments, the vibration sensor is configured to measure vibrations that affect the relative position between the imaging-type charged particle beam microscope and the substrate support. As shown in Fig. 4, in view of the relatively large amplitude generated in the vacuum chamber, the measurement can be performed in the vacuum chamber. According to yet another or additional embodiment, a vibration sensor, such as an interferometer or a piezoelectric vibration sensor, can be fixed to a substrate support to measure the relative position of an imaging-type charged particle beam microscope (and Position change), or it can be fixed in an imaging-type charged particle beam microscope to measure the relative position (and position change) of the substrate support. The interferometer may include a first reflector fixed on the imaging-type charged particle beam microscope, and a second reflector fixed on the substrate support. The measurement of the two mirrors can be used to calculate the relative movement of the imaging-type charged particle beam microscope (such as an SEM) and the substrate support (that is, the platform). Interference can provide information about the vibration of the substrate relative to the first imaging-type charged particle beam microscope. The signal indicating relative motion (vibration) can be used in a controller of a scanning deflector included in an imaging-type charged particle beam microscope to compensate for the relative motion.

According to other embodiments, the vibration sensor may be fixed to the first imaging-type charged particle beam microscope and / or fixed to the second imaging-type charged particle beam microscope, wherein the vibration sensor may be adapted to measure the first imaging-type charged particle. Vibration of a beam microscope and / or a second imaging-type charged particle beam microscope. For example, the vibration sensor may be a piezoelectric vibration sensor, an acceleration sensor, or the like.

Data collected by the vibration sensor 450 on the relative position between the imaging-type charged particle beam microscope and the substrate support and / or the vibration of the vacuum chamber 120 may be transmitted to a control unit (not shown). The control unit can control the device 100 using data collected by the vibration sensor 450. In particular, using data collected by the vibration sensor 450, the control unit can control the first imaging-type charged particle beam The microscope 130, the second imaging-type charged particle beam microscope 140, the displacement unit 410, or other elements included in the device 100, for example, if the vibration sensor 450 indicates that the vibration in the vacuum chamber range exceeds a predetermined limit, temporarily Stop the inspection of the substrate. Still additionally or alternatively, the measurement of the relative position may be used to correct the image with a correct correction coefficient formed from the measurement of the relative position.

The apparatus 100 shown in FIG. 4 may further include a noise barrier, which is suitable for shielding the vacuum chamber 120 from sound vibration and / or noise.

The apparatus shown in FIG. 4 additionally shows a reinforcement bar 470 arranged in the vacuum chamber 120. In the exemplary embodiment shown in FIG. 4, two reinforcing bars 470 are shown, wherein the reinforcing bars 470 can extend along the z-direction 151. According to other embodiments, the device 100 may include additional reinforcement bars or other reinforcement structures, particularly three, four, six, eight, or more reinforcement bars. The reinforcing bar 470 may be a rigid bar, beam, or column, which may be made of one or more materials selected from the group consisting of: carbon steel, mineral casting, or any other Materials with good damping properties to dampen vibrations may have been introduced into the vacuum chamber. The reinforcing bar 470 is suitable for structurally strengthening the vacuum chamber 120 to reduce vibration of the vacuum chamber 120. Still further, a reinforcing strip may be additionally or alternatively provided on the vacuum outdoor side or the vacuum outdoor side. Reinforcement strips can be used to increase the stiffness of the vacuum chamber. Thus, the vibration generated in the vacuum chamber causes a smaller amplitude of the vibration based on the increased rigidity of the vacuum chamber.

According to the embodiments described herein, various elements for shielding or reducing vibrations generated in the vacuum chamber or the vacuum chamber may be introduced. According to other embodiments, additionally or alternatively, an element for suppressing vibrations may be provided. With regard to the exemplary embodiment described above with reference to FIG. 4, the device 100 includes several applications. A combination of elements for reducing vibration in the vacuum chamber, such as, for example, a reinforcing bar 470, a noise barrier, a pneumatic element 440, and a shock absorber 431. In order to achieve the effect of reducing the generation of vibration and / or suppressing the vibration of the vacuum chamber, one or more of the aforementioned elements may be included in the same device 100. The effect of reducing vibration may also be provided by any single element selected from the aforementioned combination of elements, or more generally any sub-combination selected from the aforementioned combination of elements, incorporated into the device 100.

According to still other embodiments that can be combined with other embodiments described herein, the apparatus, and in particular the vacuum chamber of the apparatus for inspecting a display, may further comprise at least one selected from the group consisting of the following options One or more materials of material or made of them: cast iron, mineral casting, or another material with good damping properties.

As described in this disclosure, there are various elements for suppressing vibration, reducing vibration, sensing vibration, or compensating vibration. For example, a connection provided between the vacuum generating device and the vacuum chamber or a shock absorber, a plurality of reinforcing bars, one or more pneumatic elements, a noise barrier, and a coupling provided in the connection are described. A vibration sensor connected to a scanning polarizer of an imaging-type charged particle beam microscope. According to the embodiment described herein, at least one of the vibration suppression element, the vibration reduction element, the vibration sensing element, or the vibration compensation element described herein can be included in a substrate for testing a large area of a substrate. system.

FIG. 5A illustrates an imaging-type charged particle beam microscope, such as a first imaging-type charged particle beam microscope and / or a second imaging-type charged particle beam microscope, as described herein. The charged particle beam device 500 includes an electron beam cylinder 20, which provides, for example, a first chamber 21, a second chamber 22, and a third chamber 23. The first chamber, which can also be referred to as the gun chamber, contains an electron beam source 30, the electron beam source 30 There is an emitter 31 and a suppressor 32.

The transmitter 31 is connected to a power source 531 for supplying a potential to the transmitter. The potential provided to the emitter may be such that the electron beam system is accelerated to an energy of, for example, 20 keV or higher. Thus, the transmitter can be biased to a potential of -20 kV or higher negative voltage, such as in the case where the cylinder and the beam guiding tube that also provides the upper electrode 562 are tied to the ground potential. The symbol 3 in the figure 5A indicates. Alternatively, in the event that the cylinder and / or beam guide is biased to a potential different from the ground potential, the transmitter can be biased to another potential, where the transmitter and the cylinder (or The potential difference between the beam guide tubes can be -20 kV. Other potential differences can also be provided, such as -10kV to -40kV.

With the devices shown in FIGS. 5A to 5C, an electron beam (not shown) can be generated by the electron beam source 30. The beam can be aligned to a beam limiting aperture 550, which is formed to shape the size of the beam, that is, to block a portion of the beam. Thereafter, the beam can pass through a beam separator 580, which separates the main electron beam from a signal electron beam, that is, from the signal electron. The main electron beam can be focused on the substrate 160 by the objective lens. The substrate 160 is located on a substrate position on the substrate support 110. When the electron beam impinges on the substrate 160, signal electrons (such as secondary and / or backscattered electrons) or x-rays are released from the substrate 160, which can be detected by a detector 598.

In the exemplary embodiment shown in FIG. 5A, a focusing lens 520 and a beam shaping or beam limiting aperture 550 are provided. A two-stage deflection system 540 is provided between the focusing lens and a beam limiting aperture 550 (such as a beam shaping aperture) to align the beam to the aperture. The electrons can be accelerated by an extractor or a voltage from the anode into the barrel. Extractor can This is provided, for example, by the upper electrode of the focusing lens 520 or by another electrode (not shown).

As shown in FIG. 5A, the objective lens has a magnetic lens component 561. The magnetic lens component 561 has pole pieces 64 and 63 and a coil 62. The magnetic lens component 561 focuses the main electron beam on On the substrate 160. The substrate 160 can be located on the substrate support 110. The objective lens shown in FIG. 5A includes an upper pole piece 63, a lower pole piece 64, and a coil 62 that form a magnetic lens element 60 that is one of the objective lenses. In addition, the upper electrode 562 and the lower electrode 530 form an electrostatic lens element of the objective lens.

In addition, in the embodiment shown in FIG. 5A, a scanning polarizer assembly 570 is provided. The scanning polarizer assembly 570 can be magnetic, for example, but is preferably an electrostatic scanning polarizer assembly configured for high pixel rates. The scanning polarizer assembly 570 may be a single-stage assembly, as shown in FIG. 5A. Alternatively, it is also possible to provide a two-phase or even a three-phase polarizer assembly. Each stage is provided at different positions along the optical axis 2.

The lower electrode 530 is connected to a voltage supply (not shown). The embodiment shown in FIG. 5A shows that the lower electrode 530 is located below the lower electrode sheet 64. The lower electrode, which is the deceleration electrode of the immersion lens element of the objective lens (that is, the deceleration electric field lens element), is typically a potential that provides the land energy of charged particles on the substrate of 2 keV or lower, such as 500 V or 1 keV.

According to some embodiments that can be combined with other embodiments described herein, the deceleration of the charged particle beam can be provided in the vicinity of the test piece, such as in an objective lens or behind an objective lens, or a combination thereof. The deceleration can be provided by the lower electrodes 530 (ie, the deceleration electric field lens). Deceleration can be provided by the electrostatic lens element of the objective lens. Give For example, additionally or alternatively, a deceleration bias can be applied to the test strip and / or the substrate support to provide a deceleration electric field lens element according to the embodiments described herein. The objective lens can be an electrostatic-magnetic composite lens having, for example, an axial slit or a radial slit, or the objective lens can be an electrostatic deceleration electric field lens.

One of the advantages of having a land energy of 2 keV or lower, especially a land energy of 1 keV or lower, is that the main electron beam impinging on the substrate generates a stronger signal than the high energy electron beam. Because the layer (such as a low-temperature polycrystalline silicon layer) deposited on the substrate is thin, and because high-energy electrons penetrate deeply into the substrate, that is, below the layer, only a few electrons can generate a detection of information about the deposited layer Device signal. In contrast, low-energy electrons, such as those with a landing energy of 2 keV or lower, pass only into a shallower region of the substrate and therefore provide more information about the deposited layer. Thus, improved images such as grain boundaries can be provided, even when the surface etching of the substrate has not been performed as provided by the embodiments described herein.

For high-resolution applications, it is preferred to provide a landing energy of 2 keV or lower, such as 1 keV or lower, and have a high charged particle beam energy in the barrel, such as 10 keV or higher, such as 30 keV or higher. One beam energy. Embodiments may include deceleration before the test piece, for example, in the objective lens and / or between the objective lens and the test piece, the deceleration is performed by a factor of 5 or more, such as a factor of 10 or more. For other applications, it is also possible to provide a landing energy of 2 keV or lower without deceleration, for example in the event that the beam energy in the cylinder does not exceed 2 keV.

The beam splitter 580 is suitable for separating main electrons and signal electrons. The beam splitter can be a Wien filter, and / or can be at least A magnetic polarizer biases the signal electrons away from the optical axis 2. The signal electrons are then guided to the detector 598 by a beam bender 592 (such as a hemispherical beam bender) and a lens 594. Additional components can be provided, such as a filter 596. According to yet another modification, the detector can be a segmented detector configured to detect signal electrons according to the starting angle of the test strip.

According to yet another embodiment, an imaging-type charged particle beam microscope according to the embodiments described herein may also include an x-ray detector, such as for Energy-dispersive X-ray spectroscopy (EDX) ) A detector for measurement. The x-ray detector can analyze the characteristic energy of x-rays emitted from the substrate in response to the irradiation of the electron beam, and thus can analyze the chemical composition of the substrate. For example, for x-ray metrology or some other applications, an electrostatic retardation lens element can be operated to have a higher charged particle beam landing energy, such as 5keV to 15keV.

The first imaging type charged particle beam microscope and the second imaging type charged particle beam microscope may be an imaging type charged particle beam microscope type charged particle beam device, such as the charged particle beam device 500 shown in FIG. 5A.

5B and 5C illustrate another alternative embodiment of one of the charged particle beam devices 500. In Figures 5A and 5B, the option of tilting the charged particle beam to impinge on the substrate at a predetermined tilted beam landing angle is shown. According to the embodiments described herein, an imaging-type charged particle beam microscope as described herein may be used to image with one or more oblique beams. Thus, it is possible to improve 3D imaging, imaging of stepped structures, imaging of grooves, holes, and / or imaging of protruding structures.

In FIG. 5B, a charged particle beam source (not shown) emits a charged particle beam to travel along the optical axis 2 toward an objective lens 560 that focuses the beam onto a surface of a substrate 160. The pre-lens deflection unit 510 can include two deflection coils, and the deflection coils deflect the beam from the optical axis 2. In view of these two phases, the beam can be biased to appear to emerge from a point that coincides with the apparent position of the source of the charged particle beam. The front lens deflection unit 510 is disposed between the charged particle source and the objective lens 560. An in-lens deflection unit 512 can be provided in the field of the objective lens so that the respective fields overlap. The in-lens deflection unit 512 can be a one-stage or two-stage unit including two deflection coils. Although the outline of FIG. 5B shows a configuration in which one coil system is located above the main surface of the objective lens 560 and one coil system is located below the main surface of the objective lens 560, other configurations are also possible, and in particular, an in-lens deflection unit and an objective lens are provided. An overlapping configuration between the fields.

The in-lens deflection unit 512 can redirect the beam, so the beam passes through the center of the objective lens on the optical axis, that is, the center of the focusing action. The redirection system causes the charged particle beam to hit the surface of the substrate from a direction substantially opposite to the direction of the beam that does not pass through the optical axis 2. The combined action of the in-lens deflection unit 512 and the objective lens 560 guides the charged particle beam back to the optical axis, so that the charged particle beam hits the sample at a predetermined inclined beam landing angle.

In FIG. 5C, a charged particle beam source (not shown) emits a charged particle beam to travel along the optical axis 2 toward an objective lens 560 that focuses the beam onto a surface of a substrate 160. The deflection unit 510 includes two polarizers to deflect the beam away from the optical axis. Given these two phases, the beam can be biased to appear to emerge from a point that coincides with the apparent position of the source of the charged particle beam. The front lens deflection unit 510 can be disposed between the charged particle source and the objective lens 560. Above the lens front deflection unit 510, A Wien filter 513 is provided, which generates crossed electric and magnetic fields. The off-axis path of the charged particle beam through the objective lens 560 causes a first chromatic aberration. The energy dispersion effect of the Wien filter 513 introduces a second chromatic aberration of the same kind as the first chromatic aberration. By appropriately selecting the strengths of the electric field E and the magnetic field B of the Wien filter, the second chromatic aberration can be adjusted to have the same amplitude but the opposite direction as the first chromatic aberration. The effect is that the second chromatic aberration substantially compensates the first chromatic aberration on this plane of the substrate surface. The charged particle beam is tilted by traveling off-axis through the objective lens 560 and the focusing action of the objective lens.

Although FIGS. 5B and 5C illustrate a deflection unit including two deflection coils, other deflection units may be used, such as a deflection unit composed of a single uniform polarizer. In addition, instead of using a coil for magnetic deflection, an electrostatic polarizer or a magnetic-static combined polarizer can be used. According to yet another embodiment, which can be additionally or alternatively applied, the tilting of the beam can also be introduced by mechanically tilting the cylinder (ie the optical axis 2) relative to the substrate. However, tilting the charged particle beam by providing a desired beam path within the cylinder provides a faster switching between beam angles and reduces the introduction of vibration compared to a mechanical motion. Inclined charged particle beams allow for additional imaging options, which may be advantageous for imaging of 3D imaging, stepped structures, trenches, holes, or protruding structures. For example, critical dimensioning (CD) can better utilize the tilt of the beam.

According to some embodiments, an apparatus is provided for inspecting a substrate, particularly a large area substrate for display manufacturing. The apparatus includes a vacuum chamber as described herein. The apparatus additionally comprises a substrate support, which is arranged in a vacuum chamber, as described herein. The device further includes a first imaging-type charged particle beam microscope and a second imaging-type charged particle beam microscope, as described herein. Second imaging belt The electron particle beam microscope is a distance of at least 30 cm from the first imaging-type charged particle beam microscope.

6A-6B illustrate a method for inspecting a substrate according to the embodiments described herein. In the exemplary embodiment shown in FIGS. 6A-6B, the method is performed using the apparatus 100 for testing a large-area substrate as described in other embodiments described herein.

FIG. 6A illustrates a substrate 160 disposed on a substrate support 110 in a vacuum chamber 120. The substrate 160 has a substrate width 810 along the x-direction 150. As further shown, a first charged particle beam 610 is generated in the vacuum chamber 120 by a first imaging-type charged particle beam microscope 130. This corresponds to block 902 in FIG. 10. The first charged particle beam 610 is directed onto the substrate 160 to inspect the substrate 160, wherein the first charged particle beam 610 impinges on the substrate 160 at a first beam position 611. The term "first beam position", as used herein, may include a position of the first charged particle beam when the first charged particle beam impinges on the substrate. The first charged particle beam 610 may impinge on the substrate 160 to inspect a first test target (not shown), such as a first defect, on the substrate.

As shown additionally in FIG. 6A, the first charged particle beam 610 travels from the first imaging-type charged particle beam microscope 130 along the first optical axis 131 to the substrate 160, and therefore the first charged particle beam 610 impinging on the substrate 160系 Vertical to the substrate 160. Alternatively, the first charged particle beam 610 impinging on the substrate 160 may be tilted relative to the substrate 160, for example, as described with reference to FIGS. 5B and 5C. For example, tilting may be by tilting the cylinder of a first imaging-type charged particle beam microscope, or by tilting a beam within the cylinder (for example, by a deflection system for deflecting a charged particle beam). be introduced.

When the first charged particle beam 610 impinges on the substrate 160, secondary and / or backscattered particles may be generated. Secondary and / or backscattered particles can be detected by a detector included in the first imaging-type charged particle beam microscope 130, as described above. The data collected by the detector and generated by the secondary and / or backscattered particles can provide information about the substrate 160 and / or can be used for the substrate 160 of the imaging portion.

In FIG. 6B, compared with the substrate 160 shown in FIG. 6A, the substrate 160 held by the substrate support 110 has been displaced in the x direction. The dotted line 690 in FIG. 6B indicates the position of the substrate 160 before the substrate 160 is displaced, that is, the position of the substrate 160 shown in FIG. 6A. The substrate 160 shown in FIG. 6B has been displaced across a distance 650 along the x-direction 150. The displacement of the substrate support 110 along the x-direction 150 is provided by the displacement unit 410. The distance 650 along which the substrate 160 is displaced may be, for example, up to 900 mm for a 6th generation substrate. Alternatively or additionally, the distance 650 may fall within a range of 50% to 70% of the substrate width 810.

As shown in FIG. 6B, a second charged particle beam 620 is generated in the vacuum chamber 120 by the second imaging-type charged particle beam microscope 140. The second charged particle beam 620 is directed onto the substrate 160 to inspect the substrate 160, wherein the second charged particle beam 620 impinges on the substrate 160 at a second beam position 621. This corresponds to block 904 in FIG. 10. Similar to the term "first beam position", the term "second beam position" may include a position of the second charged particle beam when the second charged particle beam impinges on the substrate. The second charged particle beam 620 may impinge on the substrate 160 to inspect a second test target (not shown), such as a second defect, on the substrate.

In the embodiment shown in FIG. 6B, the second charged particle beam 620 travels from the second imaging-type charged particle beam microscope 140 along the second optical axis 141 to the substrate 160. Alternatively, the second charged particle beam 620 impinging on the substrate 160 may be inclined with respect to the substrate 160, for example, as described with reference to FIGS. 5B and 5C. For example, 610 may also be tilted relative to the substrate 160, such as described with reference to Figures 5B and 5C. For example, tilting may be by tilting the cylinder of a first imaging-type charged particle beam microscope, or by tilting a beam within the cylinder (for example, by a deflection system for deflecting a charged particle beam). be introduced.

The second beam position 621 is a beam distance 630 from the first beam position 611. Because in the exemplary embodiment shown in FIGS. 6A to 6B, when the first charged particle beam 610 impinges on the substrate 160, the first charged particle beam 610 travels along the first optical axis 131, and because When the second charged particle beam 620 impinges on the substrate 160, the second charged particle beam 620 travels along the second optical axis 141, and the beam distance 630 coincides with the distance between the first optical axis 13 and the second optical axis 141. In another embodiment, for example, if the first charged particle beam 610 and / or the second charged particle beam 620 are inclined with respect to the substrate 160, the beam distance 630 may be different between the first optical axis 13 and the second optical axis 141 distance.

Similar to the foregoing discussion of the first charged particle beam 610 with reference to FIG. 6A, when the second charged particle beam 620 impinges on the substrate 160, secondary and / or backscattered particles may be generated. The secondary and / or backscattered particles can be detected by a detector included in the second imaging-type charged particle beam microscope 140. If the substrate 160 contains, for example, a second defect where the second charged particle beam 620 impinges on the substrate 160, information about the second defect can be obtained by detecting secondary and / or backscattered particles.

According to another embodiment, a method is provided for inspecting a substrate, particularly a large area substrate for display manufacturing. The method includes providing a substrate in a vacuum chamber. The substrate may be provided to a movable substrate support disposed in a vacuum chamber, as described herein. A vacuum environment may be provided in a vacuum chamber, where the vacuum chamber may have a pressure below 10 ^-1 mbar. The method further includes generating a first charged particle beam with a first imaging-type charged particle beam microscope. The first imaging-type charged particle beam microscope may be a first imaging-type charged particle beam microscope as described above. The substrate may be provided below the first imaging-type charged particle beam microscope. The working distance between the substrate and the first imaging-type charged particle beam microscope may be 20 mm or less. Typically, the working distance will be defined by the distance between the lower pole piece and the substrate. The first charged particle beam impinges on the substrate at a first beam position. As described above, the term "first beam position", as used herein, may include a position of the first charged particle beam when the first charged particle beam impinges on the substrate. The first charged particle beam may impinge on a first region of the substrate to inspect the first region. The method may further include displacing the substrate by a displacement distance in a vacuum chamber. The displacement distance may mean, for example, the distance 650 shown in FIG. 6B. The substrate may be displaced in a direction parallel to the substrate, or to a surface of the substrate inspected by the first imaging-type charged particle beam microscope and / or the second imaging-type charged particle beam microscope. The substrate may be displaced in a first direction, as described herein. The method further includes generating a second charged particle beam with a second imaging-type charged particle beam microscope. The second imaging-type charged particle beam microscope may be a second imaging-type charged particle beam microscope described above, such as an SEM. The displaced substrate may be disposed below the second imaging-type charged particle beam microscope. The working distance between the substrate and the second imaging-type charged particle beam microscope may be 20 mm or less.

The first charged particle beam and the second charged particle beam can be generated at different times in time, so the substrate can be inspected by the first charged particle beam and by the second charged particle beam at different times in time. Alternatively, the first charged particle beam and the second charged particle beam may be generated in parallel, so the substrate may be inspected by the first charged particle beam and by the second charged particle beam at the same time in time. Therefore, according to the configuration of the first imaging-type charged particle beam microscope and the second imaging-type charged particle beam microscope of the embodiment, in addition to being used to reduce the size of the chamber, it can also be used to increase throughput and thus improve inspection equipment Resolution.

The second charged particle beam impinges on the substrate at a second beam position. Here, the first beam position is separated from the second beam position by a second distance of at least 30 cm in the first direction. As described above, the term "second beam position", as used herein, may include a position of the second charged particle beam when the second charged particle beam impinges on the substrate. The second charged particle beam may impinge on a second region of the substrate to inspect the second region, wherein the second region is spaced from the first region. Thus, the first charged particle beam and the second charged particle beam can inspect different portions of the substrate. The distance between the first zone and the second zone can be in the range of 30 cm to 180 cm, which can be determined according to the size of the large-area substrate designed for the test system.

The first charged particle beam and the second charged particle beam may impinge on the substrate perpendicular to the substrate or at an angle relative to the substrate, where the angle may be lower than 90 degrees. A landing energy of the first charged particle beam or the second charged particle beam impinging on the sample may fall in a range of 0 keV to 2 keV, and more particularly 100 eV to 1 keV.

A first substrate position along the first direction is imaged at the first beam position, and a second substrate position along the first direction is imaged at the second beam position, where the first substrate position and the second substrate position The distance along the first direction may be along 40% or more of the width of the substrate in one of the first directions.

Figures 7A to 7D show examples of different configurations of an imaging-type charged particle beam microscope (including a first imaging-type charged particle beam microscope and a second imaging-type charged particle beam microscope) in a vacuum chamber according to the embodiments described herein. . The configuration of the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 shown in FIG. 7A is similar to the embodiment considered above. In particular, the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 are arranged along the x-direction 150. As indicated, both the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 are disposed at the same y-coordinate 710 with respect to the y-direction 152.

FIG. 7B illustrates the device 100, in which the first imaging-type charged particle beam microscope 130 is disposed in a vacuum chamber 120 at a first y-coordinate 720, and in which the second imaging-type charged particle beam microscope is disposed at a position different from that of the first A second y-coordinate 721 of the y-coordinate. In the embodiment shown in FIG. 7B, a distance 135 along the x direction 150 between the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope is a first projection axis 722 and a A distance between the second projection axes 723. The first projection axis 722 extends through the center 724 of the first imaging-type charged particle beam microscope 130 along the y-direction 152, and the second projection axis 723 extends through the center 725 of the second imaging-type charged particle beam microscope 140 along the y-direction. Mathematically, the distance 135 along the x-direction 150 between the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 is a distance between two points A and B, where A Is an orthogonal projection of the center 724 in the x-direction 150, and B is an orthogonal projection of the center 725 in the x-direction 150.

FIG. 7C illustrates an embodiment according to which the device 100 A third imaging type charged particle beam microscope 750 is further included, and the first imaging type charged particle beam microscope 130, the second imaging type charged particle beam microscope 140, and the third imaging type charged particle beam microscope 750 are along the x direction. 150 configurations. As indicated, the first imaging-type charged particle beam microscope 130, the second imaging-type charged particle beam microscope 140, and the third imaging-type charged particle beam microscope 750 are arranged at the same y-coordinate 730 with respect to the y-direction 152. The third imaging-type charged particle beam microscope 750 is spaced a distance 761 from the first imaging-type charged particle beam microscope 130 along the x-direction 150 and a distance 762 from the second imaging-type charged particle beam microscope 140 along the x-direction. In the exemplary embodiment, the first imaging-type charged particle beam microscope 130, the second imaging-type charged particle beam microscope 140, and the third imaging-type charged particle beam microscope 750 are linearly configured in a symmetrical manner, and the distance 761 is Equal to distance 762. Compared to an apparatus with two imaging-type charged particle beam microscopes, the inclusion of a third imaging-type charged particle beam microscope 750 as shown in FIG. 7C allows the substrate to be further reduced in the x-direction by 150 to inspect the substrate. The distance of defects. Therefore, compared with a vacuum chamber (for example, the vacuum chamber 120 shown in FIG. 7A) including two imaging-type charged particle beam microscopes, the inner width 121 of the vacuum chamber 120 shown in FIG. 7C is smaller.

FIG. 7D illustrates an embodiment. According to this embodiment, the device 100 further includes a fourth imaging-type charged particle beam microscope 760. The first imaging-type charged particle beam microscope 130, the second imaging-type charged particle beam microscope 140, the third imaging-type charged particle beam microscope 750, and the fourth imaging-type charged particle beam microscope 760 are symmetrically arranged in a square shape. Array. Here, the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 are arranged in a first row of an array at a first y-coordinate 741. The third imaging type charged particle beam display The micromirror 750 and the fourth imaging-type charged particle beam microscope 760 are arranged in a second row of the array at a second y-coordinate 740. The third imaging-type charged particle beam microscope 750 is spaced a distance 781 from the first imaging-type charged particle beam microscope 130 along the y-direction 152 and a distance 782 from the fourth imaging-type charged particle beam microscope 760 along the x-direction. The fourth imaging-type charged particle beam microscope 760 is further spaced a distance 783 from the second imaging-type charged particle beam microscope 140 in the y direction. Distances 135, 781, 782, and 783 are equal distances. Compared to a device with two imaging-type charged particle beam microscopes, a configuration including four imaging-type charged particle beam microscopes as shown in Figure 7D allows the substrate to be reduced to 152 in the y-direction to inspect the substrate The distance of defects. Therefore, compared with a vacuum chamber (for example, the vacuum chamber 120 shown in FIG. 7A) including two imaging-type charged particle beam microscopes, a size 770 of the vacuum chamber 120 along the y-direction can be reduced.

The distance along the first direction between the first imaging-type charged particle beam microscope and the second imaging-type charged particle beam microscope, as described herein, may be the first imaging-type charged particle beam microscope and the second imaging-type charged An absolute distance between the particle beam microscopes, especially if the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 are arranged along the first direction. For example, in the device 100 shown in FIG. 7A, the distance 135 along the x direction is an absolute distance between the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140. The first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 are arranged along the x direction 150.

Alternatively, the distance along the first direction may be a projection distance along the first direction, especially if the first imaging-type charged particle beam microscope and the second imaging-type charged particle beam microscope are not arranged along the first direction Even more so. projection The distance may be smaller than the absolute distance between the first imaging-type charged particle beam microscope and the second imaging-type charged particle beam microscope. For example, in the device 100 shown in FIG. 7B, the distance along the first direction may mean the projection distance between the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140. 135, wherein the first imaging-type charged particle beam microscope 130 and the second imaging-type charged particle beam microscope 140 are not disposed along the x-direction 150.

According to embodiments that can be combined with other embodiments described herein, the device may include one or more additional imaging-type charged particle beam microscopes suitable for inspecting a substrate supported by a substrate support, particularly a third And / or a fourth imaging-type charged particle beam microscope.

Although the foregoing is directed to some embodiments, other and additional embodiments can be designed without departing from its basic scope, which is determined by the scope of the following patent applications.

Claims (20)

An apparatus for inspecting a substrate for display manufacturing, the substrate having a size of at least 1.375 square meters, the apparatus comprising: a vacuum chamber; a substrate support member disposed in the vacuum chamber, wherein the substrate supports A piece configured to support the substrate for display manufacturing; and a first imaging-type charged particle beam microscope configured to generate a charged particle beam for inspecting a substrate supported by the substrate support, The first imaging-type charged particle beam microscope is configured to generate an image of a portion of the substrate supported by the substrate support. The first imaging-type charged particle beam microscope has a field of view of less than 1 mm, wherein the first The imaging-type charged particle beam microscope includes: an objective lens and a deceleration electric field lens element. The device according to item 1 of the scope of patent application, further comprising: a vacuum generating device and a shock absorber, the shock absorber is provided in a connection portion or the connection portion between the vacuum generation device and the vacuum chamber . The device according to item 1 or 2 of the scope of patent application, further comprising one or more reinforcing strips arranged in the vacuum chamber or the vacuum chamber, wherein the reinforcing strips are suitable for structurally strengthening the vacuum chamber to Reduce vibration. The device according to item 1 or 2 of the scope of patent application, further comprising: one or more pneumatic components, wherein the vacuum chamber is fixed on the one or more pneumatic components. The device as described in the first or second scope of the patent application, further includes: a noise barrier suitable for shielding the vacuum chamber from the impact of sound vibration. The equipment described in item 1 or 2 of the patent application scope further includes: A vibration sensor, wherein the vibration sensor is adapted to measure a vibration that affects a relative position between the first imaging-type charged particle beam microscope and the substrate support. The device as described in claim 1 or 2, wherein the vacuum chamber is made of or has a plurality of reinforced structures of at least one material selected from the group consisting of: carbon steel and minerals casting. The device according to item 1 or 2 of the scope of patent application, wherein the substrate support member provides a substrate receiving area, the substrate receiving area has a first receiving area size along a first direction, and the device further includes: a A second imaging type charged particle beam microscope has a distance from the first imaging type charged particle beam microscope along the first direction, the distance being 30% to 70% of the size of the first receiving area, or the distance being 30 Cm or longer. An apparatus for inspecting a substrate for display manufacturing, the substrate having a size of at least 1.375 square meters, the apparatus comprising: a vacuum chamber; a substrate support member disposed in the vacuum chamber, wherein the substrate supports The device provides a substrate receiving area having a first receiving area size along a first direction; and a first imaging-type charged particle beam microscope and a second imaging-type charged particle beam microscope, along the There is a distance in the first direction, the distance is 30% to 70% of the size of the first receiving area, wherein the first imaging-type charged particle beam microscope has a field of view less than 1 mm, and the first imaging-type charged particle The beam microscope is configured to produce an image of a portion of the substrate. The apparatus as described in claim 9 in which the vacuum chamber has A first internal dimension in the first direction, the first internal dimension being 130% to 180% of the size of the first receiving area along the first direction. The device according to item 9 or 10 of the scope of patent application, wherein the second imaging-type charged particle beam microscope is at a distance of at least 30 cm from the first imaging-type charged particle beam microscope along the first direction. The device according to item 9 or 10 of the scope of patent application, further comprising: an x-ray detector configured to analyze x-rays emitted from the substrate. The device described in item 1 or 2 of the scope of patent application is more suitable for tilting the charged particle beam, so that the charged particle beam impinges on the substrate at a predetermined inclined beam landing angle. The device according to item 13 of the application, wherein at least the first imaging-type charged particle beam microscope is adapted to be tilted so that the charged particle beam impinges on the substrate at the predetermined tilted beam landing angle. The device according to item 13 of the patent application scope further includes a deflecting unit adapted to tilt the charged particle beam so that the charged particle beam impinges on the substrate at the predetermined tilted beam landing angle. The device according to item 15 of the patent application scope, wherein the deflection unit comprises a front lens deflection unit and an inner lens deflection unit. The device according to item 1, 2, 9 or 10 of the scope of patent application, further comprising: an x-ray detector configured to analyze a chemical composition of the substrate. A method for inspecting a substrate for display manufacturing, the substrate having a size of at least 1.375 square meters, the method comprising: providing the substrate in a vacuum chamber; A first charged particle beam microscope is used to generate a first charged particle beam. The first charged particle beam impacts the substrate with a landing energy of 2 keV or lower. The first charged particle beam microscope has A field of view less than 1 mm; and producing an image of a portion of the substrate. The method of claim 18, wherein the first charged particle beam impinges on the substrate at a first beam position, and the method further includes: generating a first charged particle beam microscope using a second imaging type. Two charged particle beams, wherein the second charged particle beam impinges on the substrate at a second beam position at a landing energy of 2 keV or lower, wherein the first beam position is along a first direction from the first The two beam positions are separated by a beam distance, and the beam distance is at least 30 cm. The method according to item 19 of the scope of patent application, wherein a first substrate position along the first direction is imaged at the first beam position, and a second substrate position along the first direction is imaged at the The second beam position is imaged, and wherein a distance along the first direction between the first substrate position and the second substrate position is 40% or more of a substrate width along the first direction.