JP2002248338A - Evacuation equipment, particle beam equipment, optical ray equipment and x-ray equipment as well as method of manufacturing semiconductor integrated circuit device using these - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an evacuation equipment which suppresses the release of impurity gas from the inner peripheral surface and structures of a chamber 29 of the evacuation equipment and improves the vacuum degree in the chamber while maintaining a high vacuum, an optical ray equipment, a particle beam equipment, an exposure equipment and an X-ray equipment as well as to manufacture a semiconductor integrated circuit device which makes element dimensions finer by stably performing observation, etc., with high accuracy by using these equipments described above. SOLUTION: The evacuation equipment which has a vessel and evacuation means 28 in the vessel and is formed with a thin film of a platinum metal 12 on the inner. The equipment, more specifically, the particle beam equipment which has a particle beam source, a particle beam vessel having a lens to narrow down the particle beam and evacuation means of the particle beam vessel and housing vessel and performs >=1 of observing, working, drawing and inspecting of a workpiece 18 by irradiation with the particle beam, in which the thin films of the platinum metal are formed on at least one inner peripheral surface of at least either of the particle beam vessel and the housing vessel.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel vacuum pumping device, and more particularly to observation, processing, drawing, and the like of a semiconductor integrated circuit device.
The present invention relates to a particle beam device, a light beam device, or an X-ray device used for manufacturing, inspection, and the like. Further, the present invention relates to a semiconductor integrated circuit device that is observed, processed, drawn, manufactured, inspected, and the like using a particle beam device or a light beam device.

[0002]

2. Description of the Related Art A vacuum apparatus provided with a vacuum pump such as a turbo-molecular pump, an ion pump, and a rotary pump and a chamber is an apparatus for creating a vacuum environment in the chamber. Generally, stainless steel, carbon steel, or the like is used for the chamber. In order to perform a test in a vacuum environment, a test object such as a sample and their supports are put into a chamber. The impure gas released from the surface of the test object and the chamber adheres to the inner wall surface of the chamber, and the adhered impure gas is dissociated, thereby lowering the degree of vacuum and the quality of the vacuum in the chamber. In addition, when the chamber is opened to the atmosphere when the test object is inserted, the impure gas adheres to the inner wall of the chamber, and the impure gas adhering at the time of evacuation is dissociated, thereby lowering the degree of vacuum in the chamber. As a means for reducing the adhesion of the impurity gas, a method of cutting the inner wall of the chamber with a paper file or the like is known.
If the inner wall of the chamber is mechanically treated, it causes impurities to be generated in the chamber, which is disadvantageous in terms of the influence on the DUT and the deterioration of vacuum quality.

A particle beam apparatus represented by an electron microscope, an ion beam apparatus, an electron beam lithography apparatus, a neutron beam apparatus and a plasma etching apparatus irradiates an electron beam or an ion beam onto a sample to perform observation, processing and drawing. It is. Among them, the electron beam lithography system and the scanning electron microscope for length measurement used in the manufacture and inspection of semiconductor integrated circuit devices are becoming increasingly smaller in the size of target elements year by year, and as a result, the electron beam required for each device is reduced. Quality is getting better.

[0004] Electron beam lithography systems have been developed to increase the throughput to point beams, variable shaped beams, and batch writing systems. On the other hand, the number of structures inside the chamber, which is the passage of the electron beam, is increasing, and the shape is also complicated. Due to the complexity of these structures, contaminants such as hydrocarbon-based compounds remaining in the structures are increased, and impurity gases are released over a long period of time, reducing the ultimate vacuum in the chamber. The impure gas released from the contaminant impedes the movement of the electron beam by colliding with the electron beam, which is a factor of deteriorating the quality of the electron beam reaching the sample. Further, the collision between the impure gas and the electron beam may activate the impure gas, and may further generate an impure gas or a pollutant. Impurity gas emitted from contaminants remaining in these structures hinders improvement in electron beam quality, thereby slowing progress in miniaturization of device dimensions.

As means for reducing pollutants, for example,
As disclosed in Japanese Patent Application Laid-Open No. H11-154640, a method has been proposed in which an adsorption plate supporting a white metal catalyst is disposed in a chamber, oxygen gas is introduced, and contaminants are cleaned by an oxidation catalyst. However, by cleaning using the catalysis of a white metal catalyst, contaminants on the surface of the adsorption plate are temporarily reduced, but contaminants in the chamber that cannot be completely cleaned or samples that are carried into the chamber after cleaning As a result, impurity gas is released, and contaminants grow again by collision with vacuum ultraviolet rays, and the ultimate vacuum degree is reduced. In addition, since oxygen gas is introduced into the chamber during cleaning, the inside of the chamber cannot be maintained in a vacuum state, and in addition, an oxidation reaction occurs on the inner wall of the chamber and on the surface of a structure in the chamber, thereby causing contaminants and impurities. It generates gas, oxide, etc., and causes beam drift. Further, when a device for introducing oxygen gas is mounted, the device is heavy, large, and complicated, and disadvantageous in terms of maintenance and vibration suppression.

An exposure apparatus typified by a KrF stepper, an ArF stepper, and an X-ray exposure apparatus irradiates a sample with a short-wavelength light such as vacuum ultraviolet ray or X-ray to perform observation, processing, and drawing. In these exposure apparatuses used for manufacturing and inspecting semiconductor integrated circuit devices, the dimensions of target elements are becoming smaller year by year, and as a result, the quality of light rays required for each device is higher. In the ArF stepper, the number of lenses and structures inside the chamber, which is a passage of vacuum ultraviolet rays, is increased, and the shape is complicated. Due to the complexity of the structure, contaminants such as hydrocarbon-based compounds remaining in the structure increase, and the impurity gas is released over a long period of time, lowering the ultimate vacuum in the chamber.

[0007] The impure gas released from the contaminants impedes the movement of the vacuum ultraviolet light by colliding with the vacuum ultraviolet light, which is a factor of deteriorating the quality of the vacuum ultraviolet light reaching the sample. Further, the impurity gas may be activated by the collision of the impurity gas with the vacuum ultraviolet rays, and may further generate an impurity gas or a pollutant. Impurities released from contaminants remaining in these structures hinder the improvement of the quality of vacuum ultraviolet light, thereby slowing the progress in miniaturization of device dimensions.

As means for reducing pollutants, for example,
As disclosed in Japanese Patent Application Laid-Open No. H11-154640, a method has been proposed in which an adsorption plate supporting a white metal catalyst is disposed in a chamber, oxygen gas is introduced, and contaminants are cleaned by an oxidation catalyst. However, by cleaning using the catalysis of a white metal catalyst, contaminants on the surface of the adsorption plate are temporarily reduced, but contaminants in the chamber that cannot be completely cleaned or samples that are carried into the chamber after cleaning As a result, impurity gas is released, and contaminants grow again by collision with vacuum ultraviolet rays, and the ultimate vacuum degree is reduced. In addition, since oxygen gas is introduced into the chamber during cleaning, the inside of the chamber cannot be maintained in a vacuum state, and in addition, an oxidation reaction occurs on the inner wall of the chamber and on the surface of a structure in the chamber, thereby causing contaminants and impurities. It generates gas, oxide, etc., and causes beam drift. Further, when a device for introducing oxygen gas is mounted, the device is heavy, large, and complicated, and disadvantageous in terms of maintenance and vibration suppression.

Japanese Unexamined Patent Publication No. Hei 4-47652 discloses a method in which a noble metal such as gold is coated on the surface of a component in a charged particle beam column made of a metal such as copper and the inside of the charged particle beam is hardly stained even when used for a long time. It is shown that. However, the gazette states that
It is not shown that a specific metal is formed on the inner peripheral surface of the container.

[0010]

SUMMARY OF THE INVENTION An object of the present invention is to suppress the release of impurity gas from the inner peripheral surface of a chamber or a structure in a chamber of a vacuum exhaust device such as a particle beam device, a light beam device, and an exposure device. Vacuum evacuation device, particle beam device, light beam device, and X-ray device that improve the ultimate vacuum in the chamber while constantly maintaining a high vacuum state, and observation, processing, and drawing are performed stably and with high precision using them. It is another object of the present invention to provide a method for manufacturing a conductor integrated circuit device having a reduced element size.

[0011]

According to the present invention, a white metal is formed on the inner peripheral surfaces of a vacuum chamber, a particle beam chamber, and a light beam chamber by vapor deposition, plating, coating, or the like. Since the white metal film is formed on the inner wall of the chamber or the structure inside the chamber, the surface of the inner wall of the chamber or the structure inside the chamber becomes stable due to the inertness of the white metal, and
By covering the surface with a white metal film controlled to an appropriate temperature, the release of impurity gases from the chamber and structures inside the chamber is suppressed, and the ultimate vacuum in the chamber is improved while always maintaining a vacuum state Can be done. Further, by improving the degree of ultimate vacuum in the chamber, the quality of the electron beam or vacuum ultraviolet rays is prevented from deteriorating. As a result, the semiconductor integrated circuit device is stably observed, processed, and drawn with high accuracy. Further, miniaturization of the element size of the semiconductor integrated circuit device is promoted.

According to the present invention, there is provided an evacuation apparatus having a container and evacuation means for evacuating the interior of the container, wherein a thin film of white metal is formed on the inner peripheral surface of the container. .

As a specific apparatus of the present invention, a particle source for generating a particle beam, a particle beam container having a lens for narrowing the particle beam emitted from the particle source to a predetermined diameter, and a workpiece are stored. A particle beam apparatus comprising: a storage container; and a vacuum exhaust unit that evacuates the particle beam container and the storage container, and performs at least one of observation, processing, drawing, and inspection of the workpiece by irradiation with the particle beam. A light source that generates a light beam, a light beam container having a lens that narrows the light beam emitted from the light source to a predetermined diameter, and a storage container that stores a workpiece.
Vacuum means for evacuating the light container and the storage container, a light device for irradiating the workpiece with the light beam emitted from the light container, an X-ray source for generating X-rays, An X-ray container having a mask for narrowing the X-ray emitted from an X-ray source to a predetermined diameter, a storage container for storing a workpiece, and a vacuum exhaust unit for evacuating the X-ray container and the storage container are provided. An X-ray apparatus for irradiating the workpiece with the X-rays emitted from the X-ray container, wherein at least one of the particle beam container, the light beam container, the X-ray container and the storage container has a white metal Is formed.

The particle beam is one of an electron beam, a neutron beam, an ion beam, and plasma;
The light beam is any one of laser light, vacuum ultraviolet light, i-line and g-line.

Further, the present invention provides at least one of observation, processing, drawing, manufacturing and inspection of a semiconductor integrated circuit device by using any one of the above-described vacuum evacuation device, particle beam device, light beam device and X-ray device. And a method of manufacturing a semiconductor integrated circuit device.

In particular, a particle beam apparatus represented by an electron microscope, an ion beam apparatus, an electron beam drawing apparatus, a neutron beam apparatus, and a plasma etching apparatus according to the present invention observes a sample by irradiating an electron beam or an ion beam onto a sample. processing,
When drawing, by forming a white metal film on the inner surface of the vacuum vessel as described above, adsorption of contaminants such as hydrocarbon-based compounds remaining for complicating these structures is reduced, and the The ultimate vacuum is maintained throughout. Since the amount of impurity gas released from the contaminants is small, the collision with the electron beam is small, the quality of the electron beam is improved, and the element size can be further reduced.

An exposure apparatus represented by a KrF stepper, an ArF stepper and an X-ray exposure apparatus is an apparatus for irradiating a sample with a short-wavelength light such as vacuum ultraviolet ray or X-ray to perform observation, processing and drawing. Since the amount of impurity gas released from the contaminant is small as described above, the collision with the light beam is small, the quality of the light beam is improved, and the element size can be further miniaturized.

As the white metal film, platinum, rhodium, osmium, palladium, and iridium are used, and are formed to a thickness of 0.1 to 5 μm by the above-described method.

[0019]

(Embodiment 1) FIG. 1 is an overall configuration diagram of an electron beam writing apparatus according to the present invention. The electron beam 17 emitted from the electron gun 1 is formed into a circular shape by the stop 2, irradiated on the stop 5, and imaged on the stop 8 by the lens 9. The image on the stop 8 is projected by the lens 10,
The light passes through the aperture 11 and enters the lens 14. Further lens 1
4 and deflectors 13 and 15 are projected and deflected, and projected on a sample 18 coated with a photosensitive agent to perform drawing. At this time, a pattern-shaped opening provided in advance in the stop 8 is selected by the deflector 7. The drawing is performed by moving the stage 19 except for the area where the deflector 13 can deflect the light. The position of the stage 19 is measured by a signal from the laser length measuring device 26 for positioning.

In recent years, the irradiation path of the electron beam 17 has been
Chamber 2 having various lenses for focusing electron beam 17
9. The number of structures inside the chamber 30 for storing the sample 18 is increased, and the shape is also complicated. Normally, the interior of the chambers 29 and 30 is evacuated by the evacuation means 28. However, due to the complexity of these structures, contaminants such as hydrocarbon-based compounds remaining in the structures increase, and the impurity To reduce the ultimate vacuum in the chambers 29 and 30. The impure gas released from the contaminant impedes the movement of the electron beam by colliding with the electron beam, which is a factor of deteriorating the quality of the electron beam 17 reaching the sample 18.

Further, the collision between the impure gas and the electron beam 17 may activate the impure gas, and may further generate an impure gas or a pollutant. In addition, contaminants grow even with impurity gases such as organic substances scattered from the sample 18. In general, contaminants have low conductivity, and as time passes, charging progresses, generating an unnecessary electric field and disturbing the original beam trajectory. The electric field changes with time and is also affected by the history of the operation state of the apparatus, so that it is difficult to predict the electric field, and the fluctuation of the beam position due to this is one of the causes of lowering the drawing accuracy. The impure gas released from these contaminants prevents the quality of the electron beam 17 from being improved, thereby slowing the progress in miniaturization of element dimensions.

The means for solving this problem in the present invention will be described below. Here, the chamber 2 of the electron beam writing apparatus
A coating of white metal 12 is applied to the inner walls 9 and 30 and the outer surfaces of the structures in the chamber. Since the white metal 12 film is formed on the inner wall of the chamber or the structure inside the chamber, the surface of the inner wall of the chamber or the structure inside the chamber becomes stable due to the inertness of the white metal 12 itself, and the temperature of the chamber becomes appropriate. The controlled formation of the white metal 12 film covers the surface, thereby suppressing the release of impurity gases from the inner walls of the chambers 29 and 30 and the structures in the chambers. The ultimate vacuum degree in 29 and 30 is improved. In addition, since the degree of ultimate vacuum in the chambers 29 and 30 is improved, the quality of the electron beam 17 is prevented from being deteriorated. As a result, the semiconductor integrated circuit device is stably observed, processed, and drawn with high accuracy. Further, miniaturization of the element size of the semiconductor integrated circuit device is promoted.

(Embodiment 2) The above embodiment shows an electron beam writing apparatus. However, the present invention is also applicable to a scanning electron microscope in which the inner wall of a chamber and the structure therein are coated with a white metal. The present invention is also applicable to a focused ion beam apparatus in which the electron gun is replaced with an ion gun and the electron beam is replaced with an ion beam. At this time, the lens, aperture, and other mechanisms of the ion beam have the same functions as those of the electron beam device.

(Embodiment 3) FIG. 2 is a configuration diagram of a vacuum apparatus according to the present invention. The vacuum device including the vacuum evacuation unit 33 and the chamber 31 is a device that creates a vacuum environment in the chamber 31. Generally, the chamber 31 is made of a stainless steel material, a carbon steel material, or the like. In order to perform a test in a vacuum environment, the test object such as a sample and their support
Put in 1. The impure gas released from the surface of the test object and the chamber 31 adheres to the inner wall surface of the chamber, and the adhered impure gas is dissociated, thereby lowering the degree of vacuum and the quality of the vacuum in the chamber. Further, when the chamber 31 is opened to the atmosphere when the DUT is inserted, the impure gas adheres to the inner wall of the chamber, and the impure gas adhered during the evacuation is dissociated, so that the degree of vacuum in the chamber 31 decreases. .

The means for solving this problem in the present invention will be described below. Here, a coating of white metal 32 is applied to the inside of the chamber 31 of the vacuum device. By forming the white metal 32 film on the inner wall of the chamber, the surface of the inner wall of the chamber becomes stable due to inertness of the white metal 32 itself, and the surface of the white metal 32 film controlled to an appropriate temperature covers the surface. As a result, the release of the impurity gas from the chamber 31 is suppressed, and the chamber 31 is constantly maintained in a vacuum state.
Improve the ultimate vacuum inside. Here, there is no need to introduce an active gas such as oxygen gas into the chamber 31.
Since the inner wall of the chamber is not polished, it is possible to avoid the influence of a chemical reaction such as oxidation on the DUT and the deterioration of vacuum quality.

(Embodiment 4) FIG. 3 is an overall configuration diagram of a rare gas halide laser stepper according to the present invention. The vacuum ultraviolet light 45 extracted from the rare gas halide laser 36 passes through the lens 40 and is irradiated and formed on the mask 41,
An image is formed at 2, 43, and 44, and projected onto a sample 46 coated with a photosensitive agent to perform drawing. The position of the stage 47 is measured by a signal from the laser length measuring device 52 for positioning.

In recent years, the number of structures inside the chamber 34, which is a passage for the vacuum ultraviolet light 45 and has various lenses for confining the vacuum ultraviolet light 45, and the chamber 48 for storing a sample, has increased, and its shape has become complicated. Usually chamber 3
The insides of the chambers 4 and 48 are evacuated by the vacuum evacuation means 54. However, due to the complexity of these structures, contaminants such as hydrocarbon compounds remaining in the structures increase, and impurity gases are released for a long time. , The ultimate vacuum in the chambers 34 and 48 is reduced. Impurity gases released from pollutants
The collision with the vacuum ultraviolet light 45 hinders the movement of the vacuum ultraviolet light 45, which is a factor of deteriorating the quality of the vacuum ultraviolet light 45 reaching the sample 46. In addition, the collision between the impure gas and the vacuum ultraviolet light 45 may activate the impure gas, and may further generate an impure gas or a contaminant. Sample 4
The contaminants grow even with impurity gases such as organic matter scattered from 6. The impure gas emitted from these contaminants prevents the quality of the vacuum ultraviolet light 45 from being improved, thereby slowing the progress in miniaturization of device dimensions.

The means for solving this problem in the present invention will be described below. Here, the above-described white metal 3 is provided inside the chambers 34 and 48 of the rare gas halide laser stepper.
5 coatings are applied. Since the white metal 35 film is formed on the inner wall of the chamber or the structure inside the chamber, the surface of the inner wall of the chamber or the inner structure of the chamber becomes stable due to the inertness of the white metal 35 itself, and the temperature becomes appropriate. Since the controlled white metal 35 film covers the surface, the release of the impure gas from the chambers 34 and 48 and the structure inside the chamber is suppressed, and the chamber 3 is kept constantly in a vacuum state.
The ultimate vacuum degree in 4, 48 is improved. Also, chamber 3
By improving the ultimate vacuum degree in the insides 4 and 48, the quality of the vacuum ultraviolet light 45 is prevented from deteriorating. As a result, the semiconductor integrated circuit device is stably observed, processed and drawn with high accuracy. Further, miniaturization of the element size of the semiconductor integrated circuit device is promoted.

(Embodiment 5) FIG. 4 is an overall configuration diagram of an i-line stepper according to the present invention. Embodiment 4 shows the rare gas halide laser stepper. However, the chambers 55 and 68 in which the inner wall and the structure therein are coated with a white metal are applicable to an i-line stepper and a g-line stepper.

(Embodiment 6) FIG. 5 is an overall configuration diagram of an X-ray exposure apparatus according to the present invention. FIG. 5 shows an X-ray exposure apparatus.
Example 4 shows a rare gas halide laser stepper,
If the optical path is constituted by the inner wall of the chamber 75 in which the white metal coating is formed on the inner wall and the inner wall of the chamber 84 for accommodating the sample 82, the ultimate vacuum degree can be improved as an X-ray exposure apparatus. it can.

(Embodiment 7) FIG. 6 is a block diagram showing a manufacturing process of a semiconductor integrated circuit using the electron beam drawing apparatus of Embodiment 1. A P well layer, a P layer, a field oxide film, a polycrystalline silicon / silicon oxide film gate, a P high concentration diffusion layer, an N high concentration diffusion layer, and the like are sequentially formed on the N minus silicon substrate by a usual method. Next, phosphorus glass (PS
G) An insulating film is deposited, and the insulating film is dry-etched to form a contact hole.

Next, a W / TiN electrode wiring material is applied by a usual method, a photosensitive agent is applied thereon, and the photosensitive agent is patterned by using the electron beam drawing method of the present invention. Then, W / TiN electrode wiring is formed by dry etching or the like.

Next, an interlayer insulating film was formed, and a hole pattern was formed by a usual method. W in the hole pattern
It is embedded with a plug, and an Al wiring or a Cu wiring is connected. The subsequent passivation process uses a conventional method.

In this embodiment, only the main manufacturing process using the electron beam lithography apparatus has been described. However, the conventional method is used except that the electron beam lithography apparatus of the present invention is used in the lithography process for forming the W / TiN electrode wiring. The same steps as in the method were used. By the above process, for example, while a conventional fine pattern having a line width of 70 nm has an error of ± 15 nm,
It was possible to form a fine pattern without lowering the error and to reduce the quality, and to manufacture a CMOS LSI with a high yield. As a result of manufacturing a semiconductor integrated circuit by using the electron beam writing method of the present invention, the writing accuracy is improved, the yield is improved, and the production amount can be increased.

Further, as a manufacturing process of the semiconductor integrated circuit,
The same effects as described above can be obtained by using the devices shown in Embodiments 2 to 6.

[0036]

According to the present invention, the release of impurity gas from the chambers of vacuum evacuation devices such as particle beam devices, light beam devices, and exposure devices and structures inside the chambers is suppressed, and a high vacuum state is always maintained. Vacuum evacuation device, particle beam device, light beam device, and X-ray device for improving the ultimate vacuum degree in the chamber, and stable, highly accurate observation, processing,
The production of the conductor integrated circuit device which is drawn and miniaturized the element size is obtained.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of an electron beam writing apparatus according to the present invention.

FIG. 2 is a configuration diagram of a vacuum exhaust device of the present invention.

FIG. 3 is an overall configuration diagram of a rare gas halide laser stepper of the present invention.

FIG. 4 is an overall configuration diagram of an i-line and g-line stepper of the present invention.

FIG. 5 is an overall configuration diagram of an X-ray exposure apparatus of the present invention.

FIG. 6 is a block diagram showing a manufacturing process of the semiconductor integrated circuit of the present invention.

[Explanation of symbols]

1 ... Electron gun, 2, 5, 8, 11, 16 ... Aperture, 3, 6,
9, 10, 14, 40, 42, 43, 44, 56, 6
0, 62, 63, 64 ... lens, 4, 7, 13, 15 ...
Deflectors, 12, 32, 35, 76 ... white metal, 17 ...
Electron beam, 18, 46, 66, 82 ... sample, 19, 4
7, 67, 83: stage, 20: high-voltage power supply, 21, 2
2, 24, 25 ... deflection control circuit, 23, 51, 71, 8
7 ... Control computer, 26, 52, 72, 88 ... Laser measuring instrument, 27, 53, 73, 89 ... Stage controller, 28, 33, 54, 74, 90 ... Vacuum exhaust means, 29, 30, 31, 34, 48, 55, 68, 7
5, 84 ... chamber, 36 ... rare gas halide laser light,
37, 38: mirror, 39: electrode, 41, 61, 80 ...
Mask, 45: vacuum ultraviolet light, 49, 69, 85: power supply device, 50, 70, 86: control circuit, 57, 77: light source chamber, 58: i-line light source, 59, 79: opening, 65: i
X-ray source 78, X-ray source 81.

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[Procedure amendment]

[Submission date] June 15, 2001 (2001.6.1)
5)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0005

[Correction method] Change

[Correction contents]

As means for reducing pollutants, for example,
As disclosed in Japanese Patent Application Laid-Open No. H11-154640, a method has been proposed in which an adsorption plate supporting a white metal catalyst is disposed in a chamber, oxygen gas is introduced, and contaminants are cleaned by an oxidation catalyst. However, by cleaning using the catalysis of a white metal catalyst, contaminants on the surface of the adsorption plate are temporarily reduced, but contaminants in the chamber that cannot be completely cleaned or samples that are carried into the chamber after cleaning since the impure gas is released from such as, electron beam
The contaminants grow again due to the collision with the beam, and the ultimate vacuum is reduced. In addition, since oxygen gas is introduced into the chamber during cleaning, the inside of the chamber cannot be maintained in a vacuum state, and in addition, an oxidation reaction occurs on the inner wall of the chamber and on the surface of a structure in the chamber, thereby causing contaminants and impurities. It generates gas, oxide, etc., and causes beam drift. Further, when a device for introducing oxygen gas is mounted, the device is heavy, large, and complicated, and disadvantageous in terms of maintenance and vibration suppression.

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) G03F 7/20 504 G03F 7/20 504 5C034 505 505 5F004 506 506 5F046 521 521 5F056 G21K 5/02 G21K 5 / 02X / 04 5/04 A M H01J 37/16 H01J 37/16 37/305 37/305 B H01L 21/027 H01L 21/66 J 21/3065 21/30 503G 21/302 515D 21/66 531A // G01R 31 / 302 541G 21/302 DZ G01R 31/28 LF term (reference) 2G001 AA01 AA03 AA04 AA05 AA07 GA01 GA06 JA02 JA04 JA14 LA11 MA05 RA04 SA01 SA04 2G011 AA01 AE03 2G132 AA00 AD15 AE16 AF12 CA13 CA17 CA15 CA12 LA10 4M106 BA02 CA38 DB18 5C034 BB06 BB10 5F004 AA15 BA17 BB18 BB30 5F046 BA03 CA08 CB20 CB23 CB24 GA07 5F056 EA11 EA12 EA16

Claims (7)

[Claims] An evacuation apparatus having a container and an evacuation means for evacuating the inside of the container, wherein a thin film of a white metal is formed on an inner peripheral surface of the container. apparatus. 2. A particle source having a particle source for generating a particle beam, a particle container having a lens for narrowing the particle beam emitted from the particle source to a predetermined diameter, a storage container for storing a workpiece, and the particle beam. A particle beam apparatus comprising: a container and an evacuation unit for evacuating the storage container; and performing at least one of observation, processing, drawing, and inspection of the workpiece by irradiating the particle beam. A particle beam apparatus, wherein a thin film of a white metal is formed on at least one inner peripheral surface of a storage container. 3. The particle beam apparatus according to claim 2, wherein the particle beam is any one of an electron beam, a neutron beam, an ion beam, and plasma. 4. A light beam container having a light source for generating a light beam, a lens for narrowing the light beam emitted from the light source to a predetermined diameter,
A storage container for storing the workpiece, and vacuum evacuation means for evacuating the light beam container and the storage container, irradiating the light beam emitted from the light beam container to the workpiece, A light beam device for performing at least one of observation, processing, drawing, and inspection, wherein a thin film of white metal is formed on an inner peripheral surface of at least one of the light beam container and the storage container. 5. A light beam apparatus according to claim 4, wherein said light beam is one of a laser beam, vacuum ultraviolet light, i-line and g-line. 6. An X-ray source having an X-ray source for generating X-rays, an X-ray container having a mask for narrowing the X-ray emitted from the X-ray source to a predetermined diameter, a storage container for storing a workpiece, and Vacuum evacuation means for evacuating the X-ray container and the storage container, irradiating the work with the X-rays emitted from the X-ray container, and observing, processing, drawing and inspecting the work. At least one
An X-ray apparatus, wherein a thin film of a white metal is formed on the inner peripheral surface of at least one of the X-ray container and the storage container. 7. The vacuum evacuation device according to claim 1, wherein
Or at least one of observation, processing, drawing and inspection of a semiconductor integrated circuit device using any one of the particle beam device according to claim 3, the light beam device according to claim 4 or 5, and the X-ray device according to claim 6. A method of manufacturing a semiconductor integrated circuit device.