TWI672546B - Display device - Google Patents

Abstract

A display device and a manufacturing method thereof are used to prevent a decrease in aperture ratio and color mixing caused by a manufacturing error of a black matrix and a color filter. This display device includes a plurality of color filters, an inorganic layer covering the color filters, and a black matrix on the inorganic layer between the color filters.

Description

Display device

The invention relates to a display device and a manufacturing method thereof.

With the advancement of an information-oriented society, people have increasingly demanded various display devices for displaying images. Therefore, people currently use different types of display devices, such as liquid crystal display (LCD) devices, plasma display panel (PDP) devices, and organic light-emitting display devices.

As a type of display device, an organic light-emitting display device is a self-light-emitting display device. Compared with a liquid crystal display device, the organic light-emitting display device has better viewing angle and contrast. At the same time, since the organic light-emitting display device does not need to use a separate backlight, a lighter and thinner light-emitting display device can be formed. At the same time, the organic light-emitting display device has excellent performance in terms of energy consumption. In addition, such an organic light emitting display device can be driven by a low voltage direct current (DC) voltage, can have a faster response time, and has a lower manufacturing cost.

This organic light emitting display device includes a plurality of pixels, and each pixel includes: an organic light emitting device and a bank layer for dividing and defining the pixels. Among them, this shore layer can be used as a pixel definition layer. The organic light emitting device includes an anode, a hole transporting layer, an organic light emitting layer, an electron transporting layer, and a cathode. In this situation, when a high voltage is applied to the anode and a low voltage is applied to the cathode, holes and electrons move through the hole transport layer and electron transport to the organic light emitting layer and are combined within the organic light emitting layer to emit light.

Examples of organic light emitting devices may include red organic light emitting devices that emit red light, green organic light emitting devices that emit green light, and blue organic light emitting devices that emit blue light, or white organic light emitting devices that include only white light. . If the organic light-emitting device includes only a white organic light-emitting device, a red filter, a green filter, and a blue filter are needed to realize red, green, and blue, respectively. The color filters and the black matrix for dividing the color filters can be formed by photolithography. However, in this situation, errors in photolithography can reduce the aperture ratio and cause color mixing.

FIG. 1A to FIG. 1C are schematic diagrams of reduction in aperture ratio and color mixing caused by process errors of a black matrix, a color filter, and a bank layer. In FIGS. 1A to 1C, for the convenience of description, the anode AND, the organic light-emitting layer OL, the cathode CAT, the bank BANK, the black matrix BM, the first color filter CF1, and the second color filter are schematically illustrated in the drawings. Light sheet CF2.

FIG. 1A shows the bank BANK, the black matrix BM, the first color filter CF1, and the second color filter CF2 without process errors, and FIG. 1B shows the bank BANK and the first color filter. The situation where the sheet CF1 is placed on the right side and the black matrix BM and the second color filter CF2 are placed on the left side, wherein the width w2 of the black matrix BM is wider than the originally expected width w1. In FIG. 1B, the black matrix BM protrudes from the boundary of the bank BANK and covers the light-emitting area EA. Therefore, the aperture ratio of the light-emitting area EA is reduced.

FIG. 1C shows that the bank BANK, the black matrix BM, and the first color filter CF1 are basically placed on the right side, and the second color filter CF2 is basically located on the left side, and the width w3 of the black matrix BM is larger than the original. The desired width w1 is narrow. As shown in FIG. 1C, the black matrix BM does not cover the area where the first color filter CF1 and the second color filter CF2 overlap. Therefore, since the light L can pass through the area where the first color filter CF1 and the second color filter CF2 overlap, color mixing occurs.

In other words, due to process errors of the black matrix BM, the first color filter CF1, and the second color filter CF2, the aperture ratio of the light-emitting area EA may be reduced or color mixing may occur.

Therefore, the present invention is used to provide a display device and a manufacturing method thereof, so as to overcome one or more problems caused by limitations and defects in the conventional technology.

An object of the present invention is to provide a display device and a manufacturing method thereof, so as to prevent a decrease in aperture ratio and color mixing caused by a process error of a black pixel and a color filter.

Other advantages and features of the present invention can be understood by those having ordinary knowledge in the technical field to which the present invention pertains when examining or implementing the present invention. At the same time, the objects and other advantages of the present invention can be understood and obtained through the structures specifically pointed out in the description, the claims, and the drawings.

In order to obtain other advantages of the present invention, a practical and extensive explanation is provided herein. The present invention provides a display device including: a plurality of color filters; an inorganic layer covering the color filters; and a color filter located on the color filters. Black matrix on the interlayer inorganic layer.

Another aspect of the present invention provides a display device, including: a first color filter and a third color filter separated from each other; and covering the first color filter and the third color filter and located in the first color An inorganic layer in the space between the filter and the third color filter; and a second color filter on the inorganic layer in the space between the first color filter and the third color filter.

Another aspect of the present invention provides a display device including a first color filter, a second color filter adjacent to the first color filter, and a first color filter and a second color filter. Black matrix between light sheets, this black matrix contains reflective metal.

The embodiment of the invention also relates to a display device. The display device includes: a first substrate; a second substrate oriented toward the first substrate; and a sub-pixel array disposed on the first substrate for emitting light. The sub-pixel array includes: a first sub-pixel and a second sub-pixel adjacent to the first sub-pixel. This display device further includes a first color filter on the first sub-pixel and a second color filter on the second sub-pixel, wherein the first color filter and the second color filter The slices are physically isolated. This display device further includes: an inorganic layer placed on the first color filter and the second color filter and in a region between the first color filter and the second color filter; and a black matrix, It is placed on the inorganic layer in the area between the first color filter and the second color filter.

Embodiments of the present invention also relate to a display device. This display device includes: a first substrate; a second substrate facing the first substrate; and a sub-pixel array placed on the first substrate. The sub-pixel array emits light and includes: at least one first sub-pixel, a second sub-pixel adjacent to the first sub-pixel, and a third sub-pixel adjacent to the second sub-pixel. The display device further includes a protective layer including a first portion located between the first color filter and the second color filter and below at least a portion of the second color filter. The first color filter and the second color filter are physically separated. The protective layer includes a second portion located between the second color filter and the third color filter and below at least a portion of the second color filter. The second color filter is physically separated from the third color filter.

An embodiment of the present invention relates to a method for manufacturing a display device. A sub-pixel array is formed on the first surface of the first substrate. The sub-pixel array includes at least one first sub-pixel and a second sub-pixel adjacent to the first sub-pixel. A first color filter and a second color filter may be formed. The first color filter and the second color filter are physically separated. An inorganic layer may be formed on the first filter and the second filter and in a region between the first filter and the second filter. A black matrix layer is formed on the inorganic layer in a region between the first filter and the second filter. The black matrix is etched to expose at least a part of the protective layer on the first filter and the second filter.

The embodiment of the present invention relates to a manufacturing method of a display device. The sub-pixel array is formed on the first surface of the first substrate. The sub-pixel array includes at least one first sub-pixel, a second sub-pixel, and a third sub-pixel adjacent to the first sub-pixel and the second sub-pixel. Forming a first color filter and a second color filter. The first color filter and the second color filter are physically separated. A protective layer may be formed on the first color filter and the second color filter, and in a region between the first color filter and the second color filter. The third filter is formed in at least one region between the first color filter and the second color filter on the protective layer. The third color filter is etched to expose at least a part of the protective layer on the first color filter and the second color filter. The etched third color filter may form a third color filter that is physically separated from the first color filter and the second color filter through the protective layer.

In the embodiment of the present invention, after the protective layer is formed, a part of the protective layer in the space between the first color filter and the second color filter can be etched. After the third color filter is etched, another part of the protective layer on the first color filter and the second color filter is etched to expose the first color filter and the second color filter. At least a part of the tablet. The etched protective layer forms a first portion between the first color filter and the third color filter and under at least a portion of the third color filter, and forms a second portion between the second color filter and the third color filter. A second portion is formed below and at least a portion of the third color filter.

The above description of the contents of this disclosure and the description of the following embodiments are used to demonstrate and explain the spirit and principle of the present invention, and provide a further explanation of the scope of the patent application of the present invention.

According to an embodiment of the present invention, an example of the present invention is shown in the drawings. Wherein, the same or similar components are denoted by the same reference numerals.

The detailed features and advantages of the present invention are described in detail in the following embodiments. The content is sufficient for any person skilled in the art to understand and implement the technical content of the present invention, and according to the content disclosed in this specification, the scope of patent applications and the drawings. Anyone skilled in the relevant art can easily understand the related objects and advantages of the present invention. The following examples further illustrate the viewpoints of the present invention in detail, but do not limit the scope of the present invention in any way.

The shapes, sizes, angles, and numbers disclosed in the drawings for describing the examples of the present invention are merely examples, and the present invention is not limited to the details shown. Wherein, the same reference numerals represent the same elements. In the following description, when the detailed description of the conventional functions or structures will unnecessarily obscure the gist of the present invention, the conventional content will not be described in detail.

When using "include", "have", and "include" in this specification, other parts may be added unless the word "only" is added. Terms in the singular can be understood to include the plural, unless this understanding is contradictory.

In the explanation of the component, although it is not described in detail, the component can also include a certain error range through interpretation.

In the description of the positional relationship, for example, when the positional relationship of two components is described as "above", "... above", "... below", "... below" and "... immediately", one or more Other components may be located between these two components unless the "only" or "direct" description is used.

It should be understood that, although the terms "first", "second", or similar terms may be used to describe different elements, these elements should not be limited by such terms. These terms are used to distinguish one element from another. For example, a first element may also be named a second element, and similarly, a second element may also be named a first element, without departing from the scope of the present invention.

Among them, the X-axis direction, the Y-axis direction, and the Z-axis direction should not be understood only as a geometric relationship between the two directions perpendicular to each other, but may refer to a broader operation direction of the elements operated by the present invention.

Among them, the term "at least one" should be understood as including any one or more of the related listed items in combination with all. For example, the term "at least one of the first, second, and third items" means two or more of the "first," "second," and "third" items, or separately Means "first item", "second item" or "third item".

The features of different embodiments of the present invention can be partially or completely matched or combined with each other, which is sufficient for those skilled in the art to operate and drive in various ways. At the same time, different embodiments of the present invention can work independently of each other, or work in cooperation with each other.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

FIG. 2 is a perspective view of a display device 100 according to an embodiment of the present invention. 3 is a plan view of a substrate, a gate driver, a source driving integrated circuit, a flexible film, a circuit board, and a clock controller in FIG. 2 according to an embodiment of the present invention. Here, the display device 100 according to the embodiment of the present invention is an organic light emitting display device, but the present invention is not limited to using an organic light emitting display device. In other embodiments, the display device 100 according to the embodiment of the present invention may be a display device such as a liquid crystal display device, a field emission display device, or an electrophoretic display device.

As shown in FIGS. 2 and 3, the display device 100 according to the embodiment of the present invention may include: a display panel 110, a gate driver 120, a source driving integrated circuit 130, a flexible film 140, a circuit board 150, and a timing controller 160. .

The display panel 110 may include a first substrate 111 and a second substrate 112. The second substrate 112 may be a package substrate. The first substrate 111 may be a plastic film or a glass substrate. The second substrate 112 may also be a plastic film, a glass substrate, or a packaging film.

A plurality of gate lines, a plurality of data lines, and a plurality of pixels may be arranged on a surface of the first substrate 111 facing the second substrate 112. Furthermore, pixels may be respectively arranged in a plurality of areas defined by the intersection structure of the gate line and the data line.

Each pixel may include a thin film transistor (TFT) and an organic light emitting device. The organic light emitting device includes a first electrode, an organic light emitting layer, and a second electrode. When the gate signal is input to the thin film transistor through the gate line, each pixel can apply a certain current to the organic light-emitting device according to the data voltage of the gate line. Therefore, the organic light emitting device of each pixel can emit light with a certain brightness according to the magnitude of the current. Hereinafter, the structure of each pixel will be described with reference to FIGS. 4, 5, 8, 9, 11, 12, 15, and 16.

As shown in FIG. 3, the display panel 110 may include a display area DA for displaying images and a non-display area NDA not for displaying images. Data lines, gate lines and pixels can be arranged in this display area DA. In addition, the gate driver 120 and a plurality of pads may be disposed in the non-display area NDA.

According to the gate control signals input from the timing controller 160, the gate driver 120 may sequentially provide the gate signals to the gate lines. At the same time, according to the form of gate driver in panel (GIP), the gate driver 120 may be arranged in the non-display area NDA on both sides or one side of the display area DA of the display panel 110. In another method, the gate driver 120 may be manufactured as a driving chip according to a tape automated bonding (TAB) form. The driving chip is mounted on a flexible film and the gate driver is manufactured. 120 is attached to the non-display area NDA on both sides or outside of the display area DA of the display panel 110.

The source driving integrated circuit 130 can receive a digital video signal and a source control signal from the timing controller 160. The source driving integrated circuit 130 can convert the digital video data into analog data according to the source control signal, and then transmit the analog data to each data line. When the source driving integrated circuit 130 is made of a driving chip, the source driving integrated circuit 130 may be mounted on the flexible film 140 through a chip-on-chip (COF) method or a board-on-chip (COP) method.

A plurality of pads, such as data pads, may be arranged in the non-display area NDA of the display panel 110. At the same time, a plurality of lines for connecting the pads to the source driving integrated circuit 130 and a plurality of lines for connecting the pads to the circuit of the circuit board 150 may be arranged in the flexible film 140. By using an anisotropic conductive film to attach the flexible film 140 to the pads, these pads can be connected to the lines of the flexible film 140.

Here, a plurality of flexible films 140 may be disposed, and a circuit board 150 may be attached to the flexible films 140. Furthermore, a plurality of circuits realized through a plurality of driving chips can be mounted on the circuit board 150. For example, the timing controller 160 can be mounted on the circuit board 150. The circuit board 150 may be a printed circuit board (PCB) or a flexible printed circuit board (FPCB).

The timing controller 160 can receive digital video data and timing signals from an external system board (not shown) through a cable of the circuit board 150. The timing controller 160 may generate a gate control signal for controlling the operation timing of the gate driver 120 and a source control signal for controlling the plurality of source driving integrated circuits 130 based on the timing signals. Further, the timing controller 160 may apply a gate control signal to the gate driver 120 and may apply a source control signal to the source driving integrated circuit 130.

4 is a plan view of an example of a pixel in a display area according to an embodiment of the present invention. This display area contains an array of sub-pixels that are useful for emitting light. For ease of description, only the red light-emitting area RE, the green light-emitting area GE, the blue light-emitting area BE, the white light-emitting area WE, the first color filter layer RF, the second color filter layer GF, the first Three color filter layers BF, transparent organic layer WF and black matrix BM.

As shown in FIG. 4, in each of the red light emitting area RE, the green light emitting area GE, the blue light emitting area BE, and the white light emitting area WE, a first electrode corresponding to an anode, an organic light emitting layer, and a cathode are stacked in this order. The corresponding second electrode further merges the holes from the first electrode with the electrons from the second electrode to emit light.

The organic light-emitting layers of the red light-emitting area RE, the green light-emitting area GE, the blue light-emitting area BE, and the white light-emitting area WE are formed as the red light-emitting area RE, the green light-emitting area GE, the blue light-emitting area BE, and the white light-emitting area WE. A common layer. The first color filter layer RF may be placed corresponding to the red light-emitting area RE, the second color filter layer GF may be placed corresponding to the green light-emitting area GE, and the third color filter layer BF may be placed with the blue light-emitting area BE. Place accordingly. Meanwhile, the transparent organic layer WF may be placed corresponding to the white light emitting area WE. Therefore, the red light emitting region RE can emit red light with the first color filter layer RF, the green light emitting region GE can emit green light with the second color filter layer GF, and the blue light emitting region BE can emit blue light with the third color filter layer BF. Shade. At the same time, the white light emitting area WE may overlap the transparent organic layer WF without a color filter, thereby emitting white light.

In FIG. 4, a red sub-pixel including a red light-emitting region RE, a green sub-pixel including a green light-emitting region GE, a blue sub-pixel including a blue light-emitting region BE, and a white sub-pixel including a white light-emitting region WE may be Is defined as a unit pixel. However, the embodiment of the present invention is not limited to this, and the white sub-pixels therein can be omitted. In this case, the red sub-pixel, the green sub-pixel, and the blue sub-pixel can be defined as one unit pixel.

The black matrix BM can be used to divide into a red filter RF, a green filter GF, a blue filter BF, and a transparent organic layer WF. To this end, a black matrix BM may be placed between the red filter RF, the green filter GF, the blue filter BF and the transparent organic layer WF.

Fig. 5 is a cross-sectional view taken along a section line I-I 'in Fig. 4.

As shown in FIG. 5, a buffer layer may be formed on one surface of the first substrate 111 facing the second substrate 112. The buffer layer may be formed on one surface of the first substrate 111 to prevent water from reaching the plurality of thin film transistors 210 and the plurality of organic light emitting devices 260 through the first substrate 111 which is easily penetrated by water. The buffer layer may include a plurality of inorganic layers penetrating alternately. For example, the buffer layer may be formed of a multilayer structure in which silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON) are alternately stacked. At the same time, this buffer layer can be omitted.

Further, a plurality of thin film transistors 210 can be formed on the buffer layer. Each thin film transistor 210 includes: an active layer 211, a gate electrode 212, a source electrode 215, and a drain electrode 214. In FIG. 5, the thin film transistor 210 is schematically drawn as a top gate type, where the gate electrode 212 is located on the active layer 211, but this does not limit the present invention. In other words, the thin film transistor 210 may also be formed as a bottom gate type in which the gate electrode 212 is formed under the active layer 211, or a dual gate type in which the gate electrode 212 is formed on the active layer 211 and under the active layer 211 .

The active layer 211 may be formed on the buffer layer. The active layer 211 is made of a silicon-based semiconductor material or an oxide-based semiconductor material. Furthermore, a light blocking layer for blocking external light from radiating to the active layer 211 may be formed between the buffer layer and the active layer 211.

Further, a gate insulating layer 220 can be formed on the active layer 211. The gate insulating layer 220 may be formed as an inorganic layer, and the gate insulating layer 220 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a combination of these materials.

Then, a gate electrode 212 and a gate line can be formed on the gate insulating layer 220. The gate electrode 212 and the gate line may be formed to include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper. (Cu) or a single layer structure or a multilayer structure of an alloy thereof.

Then, an interlayer insulating layer 230 may be formed on the gate electrode 212 and the gate line. The interlayer insulating layer 230 may be formed through an inorganic layer. For example, the interlayer insulating layer 230 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer structure of these materials.

Further, a source electrode 215, a drain electrode 214, and a gate line can be formed on the interlayer insulating layer 230. Through the contact holes penetrating through the gate insulating layer 220 and the interlayer insulating layer 230, each of the source electrode 215 and the drain electrode 214 can be in contact with the active layer 211. The source electrode 215, the drain electrode 214, and the data line may be formed to include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd). , Copper (Cu) or a single layer structure or a multilayer structure thereof.

Further, a passivation layer 240 can be formed on the source electrode 215, the drain electrode 214, and the data line to insulate the thin film transistor 210. The passivation layer 240 may be formed as an inorganic layer, and the passivation layer 240 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer structure of these materials.

Then, a planarization layer 250 may be formed on the passivation layer 240, and the planarization layer 250 is used to planarize the step height formed by the thin film transistor 210. Here, the flattening layer 250 may be formed through an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and / or other materials.

Further, an organic light emitting device 260 and a bank layer 270 can be formed on the planarization layer 250. Here, the organic light emitting device 260 may include a first electrode 261, an organic light emitting layer 262, and a second electrode 263. The first electrode 261 may be an anode, and the second electrode 263 may be a cathode.

Then, a first electrode 261 may be formed on the planarization layer 250. The first electrode 261 may contact the drain electrode 214 of the thin film transistor 210 through a contact hole penetrating the passivation layer 240 and the planarization layer 250. Among them, the first electrode 261 can transmit metal materials with high reflectivity, such as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and indium tin oxide (ITO / Al / ITO), silver-palladium copper (APC) alloy or silver-palladium-copper alloy and stacked structure of indium tin oxide (ITO / APC / ITO). Among them, the silver-palladium-copper (APC) alloy is an alloy of silver, palladium, and copper.

Further, a bank layer 270 may be formed on the flattening layer 250 to cover the edge of the first electrode 261, thereby defining a red light emitting region RE, a green light emitting region GE, a blue light emitting region BE, and a white light emitting region WE. In other words, the edge of the bank layer 270 can be used to define a light emitting area. Meanwhile, since the area where the bank layer 270 is formed cannot emit light, a non-light emitting area can be formed. Here, the bank layer 270 may be formed through an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and / or other materials.

Then, an organic light emitting layer 262 may be formed on the first electrode 261 and the bank layer 270. The organic light emitting layer 262 may be a common layer formed in the red light emitting region RE, the green light emitting region GE, the blue light emitting region BE, and the white light emitting region WE, and the organic light emitting layer 262 may emit a white light emitting layer. In this case, the organic light emitting layer 262 may be formed as a tandem structure composed of two or more stacked structures. Each of the stacked structures may include a hole transport layer, at least one light emitting layer, and an electron transport layer.

In addition, a charge generation layer may be formed between the stacked structures. The charge generation layer may include: an n-type charge generation layer adjacent to the lower stack structure; and a p-type charge generation layer formed on the n-type charge generation layer and adjacent to the upper stack structure. The n-type charge generation layer can inject electrons into the lower layer stack structure, and the p-type charge generation layer can inject holes into the upper layer stack structure. Here, the n-type charge generating layer is formed of an organic layer, and there are several layers doped with an alkaline metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs) or such as magnesium (Mg), Alkaline earth metal of strontium (Sr), barium (Ba) or radium (Ra). At the same time, a p-type charge generating layer can be formed by doping a dopant into an organic material having a hole transporting ability.

Here, a second electrode 263 may be formed on the organic light emitting layer 262. This second electrode 263 may be formed as a common layer among the red light emitting region RE, the green light emitting region GE, the blue light emitting region BE, and the white light emitting region WE. The second electrode 263 is formed of a transparent conductive material (such as indium tin oxide or indium zinc oxide) or a semi-transmissive conductive material (such as magnesium, silver, or magnesium-silver alloy) that can transmit light. Further, a capping layer may be formed on the second electrode 263.

Then, a sealing layer 280 may be formed on the second electrode 263. The sealing layer 280 can prevent oxygen or water from entering the organic light emitting layer 262 and the second electrode 263. To this end, the sealing layer 280 may include at least one inorganic layer and at least one organic layer.

For example, the sealing layer 280 may include a first inorganic layer 281, an organic layer 282, and a second inorganic layer 283. In this case, the first inorganic layer 281 may be formed to cover the second electrode 263. An organic layer 282 may be formed to cover the first inorganic layer 281. The organic layer 282 has a sufficient thickness to prevent particles from penetrating into the organic light-emitting layer 262 and the second electrode 263 through the first inorganic layer 281. Then, a second inorganic layer 283 may be formed to cover the organic layer 282.

Here, each of the first inorganic layer 281 and the second inorganic layer 283 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or oxide. Made of titanium and / or similar materials. The organic layer 282 can be made of an acrylic resin, an epoxy resin, a phenol resin, a polyimide resin, a polyimide resin, and / or the like.

Further, a first color filter 291, a second color filter 292, a third color filter 293, and a transparent organic layer 294 can be formed on the sealing layer 290. The first color filter 291, the second color filter 292, and the third color filter 293 may be physically separated from each other. In the case where the first color filter 291, the second color filter 292, and the third color filter 293 are directly formed on the sealing layer 280, when the first substrate 111 and the second substrate 112 are bonded to each other, It is not necessary to align the first color filter 291, the second color filter 292, and the third color filter 293, and it is not necessary to use a separate adhesive layer. Here, the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294 can be separated by a certain interval.

In FIG. 5, the first color filter 291 is a red filter placed corresponding to the red light emitting region RE, the second color filter 292 is a green filter placed corresponding to the green light emitting region GE, and the third The color filter 293 is a blue filter placed corresponding to the blue light-emitting area BE. Meanwhile, a transparent organic layer 294 may be placed corresponding to the white light emitting area WE.

The first color filter 291 may be formed of an organic layer containing a red dye, the second color filter 292 may be formed of an organic layer containing a green dye, and the third color filter 293 may be formed of a blue dye. An organic layer is formed. Among them, the transparent organic layer 294 may be formed through, for example, an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and / or the like.

Furthermore, an inorganic layer 310 may be formed on the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294. In other words, as shown in FIG. 5, the inorganic layer 310 can be made to cover the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294, and the first color filter The inorganic layer 310 is formed at a gap between the light filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294. In some embodiments, the inorganic layer 310 may cover the entire top surface of the first color filter 291, the second color filter 292, and the third color filter 293, and the inorganic layer 310 may be placed on black. Below the entire bottom surface of the matrix 300. The inorganic layer 310 may be formed through a transparent conductive material (or a transparent conductive oxide) such as indium tin oxide or indium zinc oxide, or through a multilayer structure formed by SiOx, SiNx, SiON, Al ₂ O ₃ or these materials.

Further, the black matrix 300 may be formed on the inorganic layer 310 formed in the gap between the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294. The black matrix 300 may be formed of an organic layer containing a black dye.

Here, a black matrix 300 may be filled between the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294. Since the black matrix 300 is formed by dry etching, the thickness D1 of the black matrix 300 is smaller than that of each of the first color filter 291, the second color filter 292, and the third color filter 293. The thickness D2 is thinner. Furthermore, the black matrix 300 is formed in the non-light-emitting area, rather than in the light-emitting area, so that the placed black matrix can cover the bank layer 270.

As described above, since the black matrix 300 is formed between the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294, the first color filter 291 may be used. The process error between the second color filter 292, the third color filter 293, and the transparent organic layer 294 determines the process error of the black matrix 300. In other words, in the conventional technology, when forming the black matrix and the color filter, the process error of the black matrix and the process error of the color filter must be considered. However, according to the embodiment of the present invention, the position where the black matrix is formed is determined according to the position of the color filter, so only the process error of the color filter needs to be considered.

In addition, in the present invention, since the black matrix 300 can be formed between the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294, the black matrix 300 covers The red light emitting area RE, the green light emitting area GE, the blue light emitting area BE, and the white light emitting area WE are very unlikely. Therefore, according to the embodiment of the present invention, it is possible to prevent the aperture ratio of the light emitting area from being reduced due to a process error of each of the black matrix and the color filter.

In addition, in the embodiment of the present invention, a space to be filled in the black matrix 300 is required between the first color filter 291, the second color filter 292, and the third color filter 293, so the first The possibility that the color filter 291, the second color filter 292, and the third color filter 293 cover each other is also small. Therefore, in the embodiment of the present invention, color mixing can be prevented due to a process error of each of the black matrix and the color filter.

In addition, in the embodiment of the present invention, since the black matrix 300 is formed between the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294, the black color can be made. The matrix 300, the first color filter 291, the second color filter 292, and the third color filter 293 have the same plane as the inorganic layer 310 on the transparent organic layer 294. In other words, the top surface of the black matrix BM is aligned with the top surface of the inorganic layer 310 on the first color filter 291 and the third color filter 293. Therefore, according to the embodiment of the present invention, the outer layer for flattening the step height of the color filter may not be formed on the black matrix 300 and the inorganic layer 310.

The second substrate 112 may be attached to the first color filter 291, the third color filter 293, and the inorganic layer 310. In addition, the second substrate 112 may be a packaging film.

FIG. 6 is a flowchart of a manufacturing method of a display device according to an embodiment of the present invention. 7A to 7G are cross-sectional views taken along a line I-I ', which are used to describe a method for manufacturing a display device according to an embodiment of the present invention.

Since the cross-sectional views shown in FIGS. 7A to 7G are methods of manufacturing the display device shown in FIG. 6, the same symbols represent the same originals. Hereinafter, a method for manufacturing a display device according to an embodiment of the present invention will be described in detail with reference to FIGS. 6 and 7A to 7G.

First, as shown in FIG. 7A, a thin film transistor 210, an organic light emitting device 260, and a sealing layer 280 can be formed.

Specifically, before the thin film transistor 210 is formed, a buffer layer may be formed on the first substrate 111 to prevent water penetrating the substrate from reaching the thin film transistor 210 and the organic light emitting device 260. The buffer layer is used to prevent water from reaching the thin film transistor 210 and the organic light emitting device 260 through the first substrate 111 which is easily penetrated by the water. The buffer layer may include a plurality of inorganic layers stacked alternately. For example, the buffer layer may be formed of a multilayer structure in which silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (SiON) are alternately stacked. At the same time, the buffer layer can be formed by a chemical vapor deposition (CVD) process.

Next, an active layer 211 included in the thin film transistor 210 can be formed on the buffer layer. Specifically, the active metal layer can be passed through the buffer layer through a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and / or the like. Next, an active layer 211 can be formed by patterning the organic metal layer through a mask process using a photoresist pattern. The active layer 211 can be formed of a silicon-based semiconductor material or an oxide-based semiconductor material.

Next, a gate insulating layer 220 may be formed on the active layer 211. The gate insulating layer 220 may be formed as an inorganic layer. For example, the gate insulating layer 220 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a combination of these materials.

Next, a gate electrode 212 included in the thin film transistor 210 may be formed on the gate insulating layer 220. Specifically, the first metal layer may be formed throughout the gate insulating layer 220 through a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and / or the like. Next, the gate electrode 212 can be formed by patterning the first metal layer through a mask process using a photoresist pattern. Wherein, the gate electrode 212 may be formed to include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), or The alloy of these materials forms a single-layer structure or a multilayer structure.

Next, an interlayer insulating layer 230 may be formed on the gate electrode 212. The interlayer insulating layer 230 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer structure of these materials.

Next, a plurality of contact holes may be formed. These contact holes can penetrate the gate insulating layer 220 and the interlayer insulating layer 230, and the active layer 211 can be exposed through these contact holes.

Next, a source electrode 215 and a drain electrode 214 included in the thin film transistor 210 may be formed on the interlayer insulating layer 230. Specifically, the second metal layer may be formed throughout the interlayer insulating layer 230 through a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and / or the like. Next, a source mask 215 and a drain electrode 214 can be formed by patterning the organic metal layer through a mask process using a photoresist pattern. Further, the source electrode 215 and the drain electrode 214 may contact the active layer 211 through a contact hole penetrating the gate insulating layer 220 and the interlayer insulating layer 230. The source electrode 215 and the drain electrode 214 may be formed to include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper. (Cu) or an alloy of these materials.

Next, a passivation layer 240 may be formed on the source electrode 215 and the drain electrode 214 of the thin film transistor 210. Wherein, the passivation layer 240 may be formed as an inorganic layer. For example, the passivation layer 240 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a combination of these materials. Here, the passivation layer 240 can be formed by chemical vapor deposition.

Next, a planarization layer 250 may be formed on the passivation layer 240. The planarization layer 250 is used to planarize the step height formed by the thin film transistor 210. Here, the flattening layer 250 may be formed through an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and / or other materials.

Next, a first electrode 261 included in the organic light emitting device 260 may be formed on the planarization layer 250. Specifically, the third metal layer may be spread throughout the planarization layer 250 through a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and / or the like. Next, the first electrode 261 can be formed by patterning the organic metal layer through a mask process using a photoresist pattern. Further, the first electrode 261 may be in contact with the drain electrode 214 of the thin film transistor 210 through a contact hole penetrating the passivation layer 240 and the planarization layer 250. Among them, the first electrode 261 can pass through a metal material having a high reflectivity, such as a stacked structure of aluminum and titanium, a stacked structure of aluminum and indium tin oxide (Ti / Al / Ti), and a stacked structure of aluminum and indium tin oxide (ITO / Al / ITO), silver-palladium-copper (APC) alloy or a stacked structure of silver-palladium-copper (APC) alloy and indium tin oxide (ITO / APC / ITO).

Next, a bank layer 270 may be formed on the flattening layer 250 to cover the edge of the first electrode 261, and further define a red light emitting region RE, a green light emitting region GE, a blue light emitting region BE, and a white light emitting region WE. Here, the bank layer 270 may be formed through an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and / or other materials.

Next, an organic light emitting layer 262 can be formed on the first electrode 261 and the bank layer 270 through a deposition process or a solution process. The organic light emitting layer 262 may be a common layer formed in the red light emitting region RE, the green light emitting region GE, the blue light emitting region BE, and the white light emitting region WE. In this case, the organic light emitting layer 262 may emit a white light emitting layer.

If the organic light emitting layer 262 is a white light emitting layer, the organic light emitting layer 262 may form a series structure of two or more stacked layers. Each of the stacked layers may include a hole transport layer, at least one light emitting layer, and an electron transport layer.

In addition, a charge generation layer may be formed between the stacked layers. The charge generation layer may include: an n-type charge generation layer adjacent to the lower stack layer; and a p-type charge generation layer formed on the n-type charge generation layer and adjacent to the upper stack layer. The n-type charge generating layer can inject electrons into the lower stacked layer, and the p-type charge generating layer can inject holes into the upper stacked layer. Here, the n-type charge generating layer is formed of an organic layer, and there are several layers doped with an alkaline metal such as lithium (Li), sodium (Na), potassium (K), or cesium (Cs) or such as magnesium (Mg), Alkaline earth metal of strontium (Sr), barium (Ba) or radium (Ra). At the same time, a p-type charge generating layer can be formed by doping a dopant into an organic material having a hole transporting ability.

Next, a second electrode 263 may be formed on the organic light emitting layer 262. This second electrode 263 may be formed as a common layer among the red light emitting region RE, the green light emitting region GE, the blue light emitting region BE, and the white light emitting region WE. The second electrode 263 can be formed through a transparent conductive material (or a transparent conductive oxide) such as indium tin oxide or indium zinc oxide or a semi-transmissive conductive material (such as magnesium, silver, or a magnesium-silver alloy). Here, the second electrode 263 may be formed through a physical vapor deposition (PVD) process such as a sputtering process and / or the like. Further, a capping layer may be formed on the second electrode 263.

Next, a sealing layer 280 may be formed on the second electrode 263. The sealing layer 280 can prevent oxygen or water from penetrating into the organic light emitting layer 262 and the second electrode 263. To this end, the sealing layer 280 may include at least one inorganic layer and at least one organic layer.

For example, the sealing layer 280 may include a first inorganic layer 281, an organic layer 282, and a second inorganic layer 283. In this case, the first inorganic layer 281 may be formed to cover the second electrode 263. In this case, the first inorganic layer 281 may be formed to cover the second electrode 263. An organic layer 282 may be formed to cover the first inorganic layer 281. The organic layer 282 has a sufficient thickness to prevent particles from penetrating into the organic light-emitting layer 262 and the second electrode 263 through the first inorganic layer 281. Further, a second inorganic layer 283 may be formed to cover the organic layer 282.

Here, each of the first inorganic layer 281 and the second inorganic layer 283 may be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or oxide. Made of titanium and / or similar materials. The organic layer 282 may be formed of an acrylic resin, an epoxy resin, a phenol resin, a polyimide resin, a polyimide resin, and / or other materials. (Step S101 shown in FIG. 6)

Secondly, as shown in FIG. 7B, the first color filter 291 may be formed to correspond to the red light emitting region RE, the second color filter 292 may be formed to correspond to the green light emitting region GE, and the third color filter 293 may be formed It is formed so as to correspond to the blue light emitting area BE. The first color filter 291 may be a red filter, the second color filter 292 may be a green filter, and the third color filter 293 may be a blue filter.

Specifically, an organic material containing a red dye may be coated on the sealing layer 280, and the first color filter 291 may be formed in the red light emitting region RE through an optical process. Next, the sealable layer 280 is coated with an organic material containing a green dye, and the second color filter 292 is formed in the green light emitting region GE through an optical process. Next, the sealable layer 280 is coated with an organic material containing a blue dye, and the third color filter 293 is formed in the blue light-emitting area BE through an optical process.

As described above, the example in which the red filter, the green filter, and the blue filter are sequentially formed has been described. However, the order of forming the color filters is not limited to this. (Step S102 shown in FIG. 6)

Third, as shown in FIG. 7C, a transparent organic layer 294 may be formed on the sealing layer 280 corresponding to the white light emitting region WE.

Specifically, a transparent organic material may be coated on the sealing layer 280, and the transparent organic layer 294 may be formed in the white light emitting region WE through an optical process. Among them, the transparent organic layer 294 may be formed through, for example, an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and / or the like.

If the red sub-pixel, the green sub-pixel, and the blue sub-pixel are defined as one unit pixel, the white pixel can be omitted. In this case, step S103 for forming the transparent organic layer 294 may be omitted. Meanwhile, in steps S102 and S103, the transparent organic layer 294 may be formed after the first color filter 291, the second color filter 292, and the third color filter 293 are formed, but this does not constitute the present invention. limit. In other embodiments of the present invention, the first color filter 291, the second color filter 292, and the third color filter 293 may be formed after the transparent organic layer 294 is formed. Alternatively, a part of the color filters of the first color filter 291, the second color filter 292, and the third color filter 293 may be formed first, and then other color filters may be formed after the transparent organic layer 294 is formed. sheet. For example, the first color filter 291 may be formed first, then the transparent organic layer 294 is formed, and then the second color filter 292 and the third color filter 293 may be further formed (step S103 shown in FIG. 6).

Fourth, as shown in FIG. 7D, an inorganic layer 310 may be formed on the first color filter 291, the second color filter 292, the third color filter 293 and the transparent organic layer 294.

Furthermore, the inorganic layer 310 can be made to cover the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294, and the first color filter 291 and the second color filter 291. The inorganic layer 310 is formed at a gap between the color filter 292, the third color filter 293, and the transparent organic layer 294. The inorganic layer 310 may be formed through a transparent conductive material (or a transparent conductive oxide) such as indium tin oxide or indium zinc oxide, or through a multilayer structure formed of SiOx, SiNx, or these materials. If the inorganic layer 310 is formed of a transparent metal material, the inorganic layer 310 can be formed by a sputtering process. If the inorganic layer 310 is formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer structure of these materials, the inorganic layer 310 is formed by a chemical vapor deposition (CVD) process. (Step S104 in FIG. 6).

Fifth, as shown in FIG. 7E, the black matrix layer 301 can cover the inorganic layer 310. The black matrix layer 301 is an organic material containing a black dye. (S105 in Figure 6)

Sixth, as shown in FIG. 7F, a dry etching without using a photomask is applied, and the black matrix 300 can be formed by etching the black matrix layer 301.

The material provided for the dry etching may be a mixed gas of O ₂ and CF ₄ . For example, the weight ratio (wt%) of O ₂ to CF ₄ may be 60: 150, but this does not limit the present invention. In such a condition that the organic layer and the inorganic layer are dry-etched through a mixed gas of O ₂ and CF ₄ , the etching ratio between the organic layer and the inorganic layer may be 100: 1 to 10: 1. For example, the black matrix layer 310 may be formed of a transparent metal material (or a transparent conductive organic material), and the etching ratio of the organic layer to the inorganic layer is about 100: 1. If the black matrix layer 310 is formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer structure of these materials, the etching ratio of the organic layer to the inorganic layer is about 10: 1.

Therefore, even in a case where the black matrix layer 301 is dry-etched without using a photomask, the organic material is mainly etched, and the inorganic layer 310 is hardly etched. In other words, the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294 can be protected by the inorganic layer 310 that is not etched.

In addition, the dry etching time can be adjusted, so that the top surface of the black matrix 300 and the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294 can be adjusted. The top surfaces of the inorganic layers 310 are aligned. The short etching time will leave the black matrix 300 on the inorganic layer 310 and block the light emitted from the red light emitting region RE, the green light emitting region GE, the blue light emitting region BE, and the white light emitting region WE through the black matrix 300. At the same time, if the etching time is long, the thickness of the black matrix 300 will be reduced, and the light blocking rate of the black matrix 300 will be reduced. In other words, the black matrix 300 cannot operate normally. Therefore, an appropriate dry etching time can be determined in advance through experience.

In addition, although the black matrix 300 is not protected by the inorganic layer 310, the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294 are protected by the inorganic layer 310. Therefore, although the dry etching time can be adjusted, the thickness D1 of the black matrix 300 is still smaller than the thickness D2 of the first color filter 291, the second color filter 292, and the third color filter 293.

In addition, since the black matrix 300 can be formed through dry etching without using a photomask instead of a photolithography process that requires a photomask, manufacturing costs and time can be saved.

In addition, since the black matrix 300 is not formed through a photolithography process, the black matrix 300 does not include a photoinitiator.

Also, since the black matrix 300 is formed in the non-light emitting area instead of the light emitting area EA, the black matrix 300 and the bank layer 270 can be overlapped.

In addition, since the black matrix 300 is filled with the space between the first color filter 291, the second color filter 292, and the third color filters 293 and 294, the top surface of the black matrix 300 and the first color filter The top surfaces of the sheet 291, the second color filter 292, the third color filter 293, and the inorganic layer 310 on the transparent organic layer 294 are on the same horizontal plane. In other words, the top surface of the black matrix BM and the top surfaces of the first color filter 291 and the third color filter 293 can remain aligned. Therefore, according to the embodiment of the present invention, as shown in FIG. 7G, the second substrate 112 without the protective layer can be attached on the black matrix 300 and the black matrix layer 310. This second substrate 112 may be a packaging film. (Step S106 in FIG. 6).

The process of forming the first color filter 291, the second color filter 292, the third color filter 293, the transparent organic layer 294, the inorganic layer 310, and the black matrix 300 shown in FIGS. 7A to 7G is as follows: The process of forming the organic light-emitting device 260 on the sealing layer 280 is a low-temperature process performed at 100 ° C. or lower to prevent the organic light-emitting device 260 from being damaged.

In FIGS. 6 and 7A to 7G, an example in which the first color filter 291, the second color filter 292, the third color filter 293, and the inorganic layer 310 are formed on the sealing layer 280 has been described. However, as similar to that described in FIGS. 7A to 7G, a first color filter 291, a second color filter 292, a third color filter 293 and an inorganic material may be formed on the second substrate 112. Layer 310. In this case, a process of bonding the first substrate 111 and the second substrate 112 to each other through the adhesive layer 320 may be further performed.

Fig. 8 is a cross-sectional view taken along the line I-I 'of Fig. 4 in the embodiment of the present invention. The first color filter 291, the second color filter 292, the third color filter 293, the transparent organic layer 294, the black matrix 300, and the inorganic layer 310 are formed on the second substrate 112 instead of the sealing layer. 8 is substantially the same as FIG. 5 except that the first substrate 111 is bonded to the second substrate 112 through the adhesive layer 320.

In addition, in FIG. 8, the first substrate 111 and the second substrate 112 need to be bonded by the adhesive layer 320. The adhesive layer 320 may be a transparent adhesive film or a transparent adhesive resin. Furthermore, in FIG. 8, the first substrate 111 and the second substrate 112 may be aligned when the first substrate 111 and the second substrate 112 are bonded, and the black matrix 300 and the bank layer 270 may be overlapped.

In addition, the first color filter 291, the second color filter 292, the third color filter 293, the transparent organic layer 294, the black matrix 300, and the inorganic layer 310 are formed on the second substrate 112 instead of being formed on In addition to the differences on the sealing layer 280, it is used to form a first color filter 291, a second color filter 292, a third color filter 293, a transparent organic layer 294, and a black matrix 300 on the second substrate 112. The process with the inorganic layer 310 is basically the same as steps S102 to S106 shown in FIG. 6.

Fig. 9 is a cross-sectional view taken along the line I-I 'of Fig. 4 in the embodiment of the present invention.

Among them, except that the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294 include particles 330 for scattering light, the cross-sectional view of FIG. 9 is basically This can be described with reference to FIG. 5.

The particles 330 may be TiO ₂ or SiO ₂ . The size of the particles 330 may be from 0.05 μm to 1 μm. As the size of the particles 330 increases, the light transmittance of the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294 is reduced or the scattering rate is reduced. Increase. Therefore, the size of each particle 330 may be determined in advance according to the light transmittance and the scattering rate of the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294.

A head-mounted display device (HMD) is a glasses-type monitoring device used for virtual reality (VR) or augmented reality (AR). This head-mounted display device can be worn by glasses or helmets and formed close to use. The focus of the user's eyes is a certain distance. At the same time, the head-mounted display device can also be equipped with a small organic light-emitting display device with high resolution. In the embodiment of the present invention, since each of the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic layer 294 includes the particles 330, it is possible to make particles from The light from the red light-emitting area RE, the green light-emitting area GE, the blue light-emitting area BE, and the white light-emitting area WE is scattered and displayed. Therefore, according to the embodiment of the present invention, if the head-mounted display device is configured with an organic light-emitting display device, the black matrix can be prevented from being seen in a lattice pattern.

10A to 10C are cross-sectional views of different structures including a color filter, wherein the color filter includes particles.

In FIG. 10A, a structure in which the first color filter 291, the second color filter 292, and the third color filter 293 are located on the black matrix 300 is shown. As shown in FIG. 10A, the light L emitted from the organic light-emitting layer 262 included in the red light-emitting area RE may be scattered by the particles 330 of the first color filter 291, pass through the second color filter 292, and then be passed through The particles 330 of the color filter 292 scatter and emit from the upper portion of the second color filter 292. In other words, light emitted from the organic light-emitting layer 262 included in a light-emitting region can pass through a color filter included in a light-emitting region adjacent to this light-emitting region, thereby causing color mixing.

In FIG. 10B, the structure in which the scattering layer 340 containing the particles 330 is placed on the first color filter 291 to the third color filter 293 is depicted. As shown in FIG. 10B, the light L emitted from the organic light-emitting layer 262 included in the red light-emitting region RE can pass through the first color filter 291 and is scattered by the particles 330 of the scattering layer 340 and passes through the green light-emitting region GE. Further, this light can be scattered by the particles 330 included in the green light emitting region GE and output. In other words, light emitted from the organic light-emitting layer 262 included in a light-emitting region can pass through a color filter included in a light-emitting region adjacent to the light-emitting region, so that visibility and image sharpness are reduced, and blurring is generated.

In FIG. 10C, it is shown that a scattering layer 340 including particles 330 is formed on the sealing layer 280, and a black matrix 300, a first color filter 291, a second color filter 292, and Third color filter 293. As shown in FIG. 10C, the light L emitted from the organic light-emitting layer 262 included in the red light-emitting region RE can be scattered by the particles 330 of the scattering layer 340 and passed through GE, and then the light can pass through the second color filter 292. In other words, light emitted from the organic light-emitting layer 262 included in a light-emitting region can pass through a color filter included in a light-emitting region adjacent to this light-emitting region, thereby causing color mixing.

On the other hand, in the embodiment of the present invention, as shown in FIG. 9, since the black matrix 300 is placed on the first color filter 291, the second color filter 292, the third color filter 293, and the transparent organic Between the layers 294, the light emitted by the organic light emitting device 260 included in the red light emitting region RE can be prevented from being scattered through the particles 330 of the first color filter 291 and passing through the light emitting region adjacent to the red light emitting region RE Color filters. In other words, in the embodiment of the present invention, color mixing and blur can be prevented.

FIG. 11 is a plan view of another example of pixels in the display area. For ease of description, only the red light-emitting area RE, the green light-emitting area GE, the blue light-emitting area BE, the first color filter layer RF, and the second color filter layer included in the plurality of pixels are shown in FIG. 11. GF and the third color filter layer BF.

As shown in FIG. 11, each of the red light emitting area RE, the green light emitting area GE, and the blue light emitting area BE may correspond to one area, in which the first electrode of the anode, the organic light emitting layer, and The second electrode of the cathode is sequentially stacked, and then the holes from the first electrode are combined with the electrons from the second electrode to emit light.

The organic light-emitting layer of each of the red light-emitting area RE, the green light-emitting area GE, and the blue light-emitting area BE can serve as a common layer in the red light-emitting area RE, the green light-emitting area GE, and the blue light-emitting area BE and emits white light. . The first color filter layer RF may be placed corresponding to the red light-emitting area and the red light-emitting area RE, the second color filter layer GF may be placed corresponding to the green light-emitting area GE, and the third color filter layer BF may be connected to the blue The colored light-emitting areas BE are placed accordingly. Therefore, the red light emitting region RE can emit red light with the first color filter layer RF, the green light emitting region GE can emit green light with the second color filter layer GF, and the blue light emitting region BE can emit blue light with the third color filter layer BF. Shade. Meanwhile, the red sub-pixel includes a red light-emitting region RE, the green sub-pixel includes a green light-emitting region GE, and the blue sub-pixel includes a blue light-emitting region BE.

In the embodiment of the present invention, each color filter may be placed between two identical color filters with different colors. For example, as shown in FIG. 11, a red sub-pixel can be placed between two green sub-pixels in the K-th column (K is a positive integer), and a blue sub-pixel can be placed in the K + 1th column. Placed between two green sub pixels. In other words, only the red sub-pixel set and the green sub-pixel can be placed in column K, and the green sub-pixel and the blue sub-pixel can be placed in column K + 1. Therefore, red sub pixels and green sub pixels can be placed in the same column of the array, and green sub pixels and blue sub pixels can be placed in the same row of the array.

In addition, the red sub-pixel in column K can be adjacent to the green sub-pixel in column K + 1, and the green sub-pixel in column K and the blue sub-pixel in column K + 1 can be made adjacent. The pixels are adjacent. In other words, the green sub-pixels in the Kth column and the green sub-pixels in the K + 1th column can be placed in the diagonal direction.

In the embodiment of the present invention, due to the above-mentioned arrangement manner, one red sub-pixel, two green sub-pixels, and one blue sub-pixel can be defined as one unit pixel.

In addition, the embodiment of the present invention is not limited by the embodiment shown in FIG. 11. In another embodiment of the present invention, a red sub-pixel may be placed between the green sub-pixels in the j-th row (j is a positive integer), and a blue sub-pixel may be placed between the green sub-pixels in the j + 1th row. Dice pixels.

As described above, in the embodiment of the present invention, since the first color filter 291 and the third color filter 293 are placed between the second color filter 292 as shown in FIG. 11, the first color can be divided. The filter 291, the second color filter 292, and the third color filter 293, so there is no need to use a division of the first color filter layer RF, the second color filter layer GF, and the third color filter layer BF. Black matrix.

Fig. 12A is a cross-sectional view of the embodiment of the present invention obtained along the section line II-II 'in Fig. 11.

12A is substantially the same as FIG. 5 except that the first color filter 291, the second color filter 292, the third color filter 293, the inorganic layer 310, and the second substrate 112.

As shown in FIG. 12A, the first color filter 291 and the third color filter 293 may be placed on the sealing layer 280. The first color filter 291 and the third color filter 293 are separated from each other by a certain distance.

The first color filter 291 is a red filter placed corresponding to the red light emitting region RE, and the third color filter 293 is a blue filter placed corresponding to the blue light emitting region BE. The first color filter 291 may be formed of an organic layer containing a red dye, and the third color filter 293 may be formed of an organic layer containing a blue dye.

Furthermore, an inorganic layer 310 may be formed on the first color filter 291 and the third color filter 293. In other words, as shown in FIG. 12A, the first color filter 291, the third color filter 293, and the interval between the first color filter 291 and the third color filter 293 may be covered by 310. The inorganic layer 310 may be formed through a transparent conductive material (or a transparent conductive oxide) such as indium tin oxide or indium zinc oxide, or through a multilayer structure formed by SiOx, SiNx, or these materials.

The second color filter 292 may be formed on the inorganic layer 310. The second color filter 292 is located between the first color filter 291 and the third color filter 293. The second color filter 292 may be a green filter placed corresponding to the green light emitting region GE. Meanwhile, the first color filter 292 may be formed of an organic layer containing a green dye.

The second color filter 292 may be filled between the first color filter 291 and the third color filter 293. Since the second color filter 292 is formed by dry etching, the thickness D3 of the second color filter 292 is thinner than the thickness D4 of each of the first color filter 291 and the third color filter 293.

As described above, in the embodiment of the present invention, since the second color filter 292 is formed between the first color filter 291 and the third color filter 293, the first color can be processed without using the black matrix BM. The filter 291, the second color filter 292, and the third color filter 293 are divided. Therefore, in the embodiment of the present invention, it is possible to prevent a decrease in the aperture ratio of the light emitting area due to a process error of each of the black matrix and the color filter.

In addition, in the embodiment of the present invention, since the second color filter 292 is formed between the first color filter 291 and the third color filter 293, the first color filter 291 and the second color filter The possibility that the light filter 292 and the third color filter 293 overlap each other is very small. Therefore, in the embodiment of the present invention, color mixing can be prevented due to a process error of each of the black matrix and the color filter.

In addition, in the embodiment of the present invention, since the second color filter 292 is formed between the first color filter 291 and the third color filter 293, the first color filter 291 and the third color filter The plane of the light sheet 293 and the plane of the inorganic layer 310 on the second color filter 292 are on the same layer. In other words, the top surface of the second color filter 292 is aligned with the top surfaces of the inorganic layer 310 on the first color filter 291 and the third color filter 293. Therefore, in the embodiment of the present invention, the outer layer for flattening the step height of the color filter may not be formed on the first color filter 291, the third color filter 293, and the inorganic layer 310.

The second substrate 112 can be attached on the second color filter 292 and the inorganic layer 310. Meanwhile, the second substrate 112 may be a packaging film.

Fig. 12B is a cross-sectional view of the embodiment of the present invention obtained along the section line III-III 'in Fig. 11.

The cross-sectional view of FIG. 12B is substantially similar to the cross-sectional view of FIG. 12A, except that the third color filter 293 is replaced by the first color filter 291 along the section line III-III 'in FIG.

FIG. 13 is a flowchart of a manufacturing method of a display device according to another embodiment of the present invention. 14A to 14F are cross-sectional views taken along a section line II-II 'for explaining a method for manufacturing a display device according to another embodiment of the present invention.

14A to 14F are cross-sectional views for explaining the manufacturing method of the display device in FIG. 12, and therefore the same reference numerals are used to represent the same elements. Next, a manufacturing method of a display device according to another embodiment of the present invention will be described with reference to FIGS. 13 and 14A to 14F.

First, as shown in FIG. 14A, a thin film transistor 210, an organic light emitting device 260, and a sealing layer 280 can be formed. Step S201 in FIG. 13 is substantially the same as S101 in FIG. 6, and therefore step S201 in FIG. 13 is not described in detail. (Step S201 in FIG. 13).

Second, as shown in FIG. 14B, a first color filter 291 corresponding to the red light emitting region RE may be formed on the sealing layer 280, and a third color filter 293 corresponding to the blue light emitting region BE may be formed. .

Specifically, an organic material containing a red dye may be coated on the sealing layer 280, and the first color filter 291 may be formed in the red light emitting region RE through an optical process. The first color filter 291 may be a first color filter layer RF. At the same time, an organic material containing a blue dye may be coated on the sealing layer 280, and the third color filter 293 may be formed in the blue light emitting region BE through an optical process. The third color filter 293 may be a third color filter layer BF. (Step S202 of FIG. 13)

Third, as shown in FIG. 14C, an inorganic layer 310 may be formed on the first color filter 291 and the third color filter 293.

The formed inorganic layer 310 can cover the first color filter 291, the third color filter 293, and the space between the first color filter 291 and the third color filter 293. The inorganic layer 310 may be disposed on the entire surfaces of the first color filter 291 and the third color filter 293 and may be disposed below the entire bottom surface of the second color filter 292. The inorganic layer 310 may be formed through a transparent conductive material (or a transparent conductive oxide) such as indium tin oxide or indium zinc oxide, or through a multilayer structure formed by SiOx, SiNx, or these materials. If the inorganic layer 310 is formed of a transparent metal material, the inorganic layer 310 can be formed by a sputtering process. If the inorganic layer 310 is formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer structure of these materials, the inorganic layer 310 is formed by a chemical vapor deposition (CVD) process. (Step S203 in FIG. 13).

Fifth, as shown in FIG. 14D, the second color filter 292a may cover the inorganic layer 310. The second color filter layer 292a is an organic material containing a green dye. (Step S204 in FIG. 13)

Sixth, as shown in FIG. 14E, a second color filter 292 can be formed by etching the second color filter layer 292a using dry etching without using a photomask.

The material provided for the dry etching may be a mixed gas of O ₂ and CF ₄ . For example, the weight ratio (wt%) of O ₂ to CF ₄ may be 60: 150, but this does not limit the present invention. In such a condition that the organic layer and the inorganic layer are dry-etched through a mixed gas of O ₂ and CF ₄ , the etching ratio of the organic layer and the inorganic layer may be 100: 1 to 10: 1. For example, the inorganic layer 310 may be formed of a transparent metal material (or a transparent conductive organic material), and the etching ratio between the organic layer and the inorganic layer is about 100: 1. If the inorganic layer 310 is formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer structure of these materials, the etching ratio of the organic layer to the inorganic layer is about 10: 1.

Therefore, even in a case where the second color filter layer 292a is dry-etched without using a photomask, the second color filter layer 292a corresponding to the organic material can be mainly etched, and the inorganic layer 310 is hardly etched. Etching. In other words, the first color filter 291 and the third color filter 293 can be protected through the inorganic layer 310 from being etched.

In addition, the dry etching time can be adjusted, so that the top surface of the second color filter layer 292a and the first color filter 291 and the top surface of the inorganic layer 310 on the third color filter 293 can be aligned. If the number of etching times is short, the second color filter layer 292a will remain on the inorganic layer 310, which will cause color mixing. At the same time, if several types of etching time are long, the thickness of the second color filter 292 will be reduced and it will not be able to operate normally. Therefore, an appropriate dry etching time can be determined in advance through experience.

In addition, although the second color filter layer 292 a is not protected by the inorganic layer 310, the first color filter 291 and the third color filter 293 are protected by the inorganic layer 310. Therefore, although the dry etching time can be adjusted, the thickness of each of the first color filter 291 and the third color filter 293 is still smaller than the thickness of the second color filter 292.

In addition, since the second color filter layer 292a can be formed through dry etching without using a photomask instead of a photolithography process that requires a photomask, manufacturing costs and manufacturing time can be saved.

In addition, since the second color filter layer 292a is not formed through the photolithography process, the second color filter layer 292a does not include a photoinitiator.

In addition, since the second color filter 292 is formed between the first color filter 291 and the third color filter 293, the top surface of the second color filter 292 and the first color filter 291, The top surfaces of the inorganic layers 310 on the third color filter 293 are aligned. In other words, the top surface of the second color filter 292 and the top surface of the inorganic layer 310 on the first color filter 291 and the third color filter 293 can be maintained at the same horizontal plane. Therefore, according to the embodiment of the present invention, the stepped outer layer for flattening the color filter is not formed on the second color filter 292 and the inorganic layer 310.

As shown in FIG. 14F, the second substrate 112 may be attached to the second color filter 292 and the inorganic layer 310. The second substrate 112 may be a sealing film. (Step S205 of FIG. 13)

By replacing another red sub-pixel with a blue sub-pixel and replacing the first color filter 291 with a third color filter 293, FIGS. 13 and 14A to 14F can be applied to FIG. 12B The examples.

Fig. 15 is a cross-sectional view of another embodiment of the present invention obtained along the section line II-II 'in Fig. 11. Among them, except that the first color filter 291, the second color filter 292, the third color filter 293, and the inorganic layer 310 are formed on the second substrate 112 instead of the sealing layer 280, and then pass through the adhesive layer 320 so that Except for the combination of the first substrate 111 and the second substrate 112, the cross-sectional view of FIG. 15 basically refers to FIG. 12A.

In FIG. 15, the second substrate 112 may be a glass substrate or a plastic substrate. Meanwhile, as shown in FIG. 15, an adhesive layer 320 for bonding the first substrate 111 to the second substrate 112 needs to be provided. The adhesive layer 320 may be a transparent adhesive film or a transparent adhesive resin. In addition, in FIG. 15, when the first substrate 111 is bonded to the second substrate 112, the first substrate 111 and the second substrate 112 may be aligned, so that the first color filter 291 and the second color filter are aligned. The sheet 292 and the third color filter 293 correspond to the red light emitting region RE, the green light emitting region GE, and the blue light emitting region BE.

In addition, in addition to forming the first color filter 291, the second color filter 292, the third color filter 293, and the inorganic layer 310 on the second substrate 112 instead of the sealing layer 280, the second substrate 112 The steps of forming the first color filter 291, the second color filter 292, the third color filter 293, and the inorganic layer 310 on 112 are basically the same as steps S202 to S205 of FIG.

Fig. 16A is a cross-sectional view of the embodiment of the present invention obtained along the section line II-II 'of Fig. 11.

Except for the first color filter 291, the second color filter 292, the third color filter 293, the black matrix 300, and the second substrate 112, the cross-sectional view of FIG. 16A is basically similar to that of FIG.

As shown in FIG. 16A, a first color filter 291 and a third color filter 293 can be placed on the sealing layer 280. At the same time, the first color filter 291 and the third color filter 293 can be separated from each other through a certain interval.

The first color filter 291 is a red filter placed corresponding to the red light emitting region RE, and the third color filter 293 is a blue filter placed corresponding to the blue light emitting region BE. The first color filter 291 may be formed as an organic layer containing a red dye, and the third color filter 293 may be formed as an organic layer containing a blue dye. As shown in FIG. 9, each of the first color filter 291 and the third color filter 293 may include particles 330, but this does not limit the embodiment. In other embodiments, the particles 330 may be omitted.

The second color filter 292 may be formed between the first color filter 291 and the third color filter 293. The second color filter 292 is a green filter placed corresponding to the green light emitting region GE. The second color filter 292 may be formed as a green color filter corresponding to the green light emitting region GE. Meanwhile, the second color filter 292 may be an organic layer containing a green dye. As shown in FIG. 9, the second color filter 292 may include particles 330, but this does not constitute a limitation on this embodiment. In other embodiments, particles 330 may be omitted.

In addition, since the second color filter 292 can be formed through dry etching, the width D3 of the second color filter 292 is thinner than the width D4 of the first color filter 291 and the third color filter 293.

Here, a black matrix 300 may be formed between the first color filter 291 and the second color filter 292 and between the second color filter 292 and the third color filter 293. The black matrix 300 may be formed by transmitting aluminum or silver with higher reflectivity. In the embodiment of the present invention, because the black matrix 300 is formed of a reflective metal layer, the light L passing through the black matrix 300 can be completely reflected and output. Therefore, compared with the case where the black matrix 300 is formed of a light absorbing material, the light efficiency can be further improved.

In addition, the black matrix 300 may include a tail portion 311 extending from a lower portion of the black matrix 300. The tail portion 311 may be formed on the sealing layer 280 and covered by the second color filter 292. Therefore, the black matrix 300 may have a first portion located between the first color filter 291 and the second color filter 292, and the first portion may be located below at least a part of the second color filter 292, and the first A part of the second color filter 292 and the first color filter 291 can be physically separated. Similarly, the black matrix 300 may further have a second portion located between the second color filter 292 and the third color filter 293, and the second portion may be located on at least a portion of the second color filter 292. The second part can physically separate the second color filter 292 from the third color filter 293.

Here, the second substrate 112 may be attached on the second color filter 292 and the black matrix 300. The second substrate 112 can be a film.

Fig. 16B is a cross-sectional view of the embodiment of the present invention obtained along the section line III-III 'of Fig. 11.

The cross-sectional view of FIG. 16B is basically similar to FIG. 16A, except that a cross-sectional view is obtained along the cross-sectional line III-III 'of FIG. 11 and the third color filter 293 is replaced by another first color filter 291.

FIG. 17 is a flowchart of a manufacturing method of a display device according to another embodiment of the present invention. 18A to 18H are cross-sectional views taken along a section line obtained along a section line II-II '.

First, a thin film transistor 210, an organic light emitting device 260, and a sealing layer 280 can be formed. Step S301 in FIG. 17 is basically the same as step S101 in FIG. 6, so step S301 in FIG. 17 is not repeated here. (Step S301 in FIG. 17)

Second, the first color filter 291 may be formed on the sealing layer 280 so as to correspond to the red light emitting region RE, and the third color filter 293 corresponds to the blue light emitting region BE. Step S302 in FIG. 17 is basically the same as step S202 in FIG. 13, so step S302 in FIG. 17 will not be described in detail here. (Step S302 in FIG. 17)

Third, as shown in FIG. 18A, a reflective metal layer 300a covering the sealing layer 280, the first color filter 291, the second color filter 292, and the third color filter 293 may be formed.

Specifically, a reflective metal layer 300a may be formed to cover the first color filter 291, the third color filter 293, and a space between the first color filter 291 and the third color filter 293. Here, the reflective metal layer 300a may be formed of aluminum or silver through a sputtering process. (Step S303 in FIG. 17)

Fourth, as shown in FIG. 18B, a photoresist pattern PR may be formed on the reflective metal layer 300a so as to cover the first color filter 291 and the third color filter 293. The width W1 of the photoresist pattern PR can be adjusted to be wider than the width W2 of each color filter in the first color filter 291 and the third color filter 293. (Step S304 in FIG. 17)

Fifth, as shown in FIG. 18C, a part of the reflective metal layer 300a exposed in the area between the first color filter 291 and the third color filter 293 that is not covered by the photoresist pattern PR can be wet-processed. Etching. Since the width W1 of the photoresist pattern PR is wider than the width W2 of each color filter in the first color filter 291 and the third color filter 293, the tail portion 311 can be added to the reflective metal layer 300a after etching. in.

Next, as shown in FIG. 18D, the photoresist pattern PR may be removed. (Step S305 in FIG. 17)

Sixth, as shown in FIG. 18E, a second color filter layer 292a may be formed on the reflective metal layer 300a and the second inorganic layer 280 not covered by the reflective metal layer 300a. Here, the second color filter layer 292a may be an organic material containing a green dye. (Step S306 in FIG. 17)

Seventh, as shown in FIG. 18E, the second color filter 292 can be formed by etching the second color filter layer 292a through dry etching without using a photomask.

The material provided for the dry etching may be a mixed gas of O ₂ and CF ₄ . For example, the weight ratio (wt%) of O ₂ to CF ₄ may be 60: 150, but this does not limit the present invention. In the case where the organic layer and the reflective metal layer 300a are dry-etched through the mixed gas of O ₂ and CF ₄ , the second color filter layer 292 a corresponding to the organic material is mainly etched, and the reflection is hardly performed. The metal layer 300a is etched. In other words, through the protection performed by the reflective metal layer 300a, the first color filter 291 and the third color filter 293 are not etched.

In addition, the dry etching time can be adjusted so that the top surface of the second color filter layer 292a and the first color filter 291 are aligned with the top surface of the reflective metal layer 300a on the third color filter 293. . If the number of etching times is short, the second color filter layer 292a will remain on the reflective metal layer 300a, thereby preventing color mixing from occurring. At the same time, if several types of etching time are long, the thickness of the second color filter 292 becomes thin, and the second color filter 292 cannot perform normal operations at this time. Therefore, an appropriate dry etching time can be determined in advance through experience.

In addition, although the second color filter layer 292a is not protected by the reflective metal layer 300a, the first color filter 291 and the third color filter 293 can be protected by the reflective metal layer 300a. Therefore, although the dry etching time is adjusted, the thickness of the first color filter 291 and the third color filter 293 is thinner than the thickness of the second color filter 292.

In addition, the second color filter layer 292a can be formed through dry etching without using a photomask, instead of using an optical process that requires a photomask, so the manufacturing cost and manufacturing time can be reduced.

In addition, since the second color filter layer 292a is not formed through a photolithography process, the second color filter layer 292a does not include a photo initiator.

In addition, since the second color filter 292 is formed between the first color filter 291 and the third color filter 293, the top surface of the second color filter 292 and the first color filter 291, The top surfaces of the inorganic layers 310 on the third color filter 293 are aligned. In other words, the top surface of the second color filter 292 and the top surface of the reflective metal layer 300a can be maintained at the same horizontal plane. Therefore, according to the embodiment of the present invention, the outer layer for flattening the step height of the color filter is not formed on the second color filter 292 and the reflective metal layer 300a. (Step S307 in FIG. 17)

Eighth, as shown in FIG. 18G, the reflective metal layer 300a on the first color filter 291 and the third color filter 293 can be etched to expose the first color filter 291 and the third color filter. Tablet 293.

17 is similar to FIG. 18A to FIG. 18G and FIG. 16B by replacing the red sub-pixel with the blue sub-pixel and replacing the first color filter 291 with the third color filter 293.

Specifically, a photoresist pattern may be formed in a region other than the first color filter 291 and the third color filter 293, and then the reflective metal layer 300a exposed without being covered by the photoresist pattern may be wet. Type etching. Next, the photoresist pattern can be removed. Therefore, the top surfaces of the second color filter 292 and the top surfaces of the first color filter 291 and the third color filter 293 can be aligned.

As shown in FIG. 18H, the second substrate 112 may be attached to the first color filter 291, the second color filter 292, and the third color filter 293. The second substrate 112 is a packaging film. (Step S308 in FIG. 17)

Although the present invention is disclosed in the foregoing embodiments, it is not intended to limit the present invention. Changes and modifications made without departing from the spirit and scope of the present invention belong to the patent protection scope of the present invention. For the protection scope defined by the present invention, please refer to the attached patent application scope.

AND‧‧‧Anode

BANK‧‧‧shore

BM‧‧‧Black Matrix

CAT‧‧‧ cathode

CF1‧‧‧The first color filter

CF2‧‧‧Second color filter

D1, D2‧‧‧thickness

D3, D4‧‧‧thickness

DA‧‧‧ Display Area

NDA‧‧‧ Non-display area

RE‧‧‧ red light emitting area

GE‧‧‧Green light emitting area

BE‧‧‧ blue light emitting area

WE‧‧‧White light emitting area

RF‧‧‧The first color filter layer

GF‧‧‧Second color filter layer

BF‧‧‧third color filter

WF‧‧‧Transparent organic layer

PR‧‧‧Photoresist pattern

EA‧‧‧light-emitting area

OL‧‧‧Organic emitting layer

w1‧‧‧Width

w2‧‧‧Width

w3‧‧‧Width

L‧‧‧light

100‧‧‧ display device

110‧‧‧display panel

111‧‧‧first substrate

112‧‧‧second substrate

120‧‧‧Gate driver

130‧‧‧Source Drive Integrated Circuit

140‧‧‧flexible film

150‧‧‧Circuit Board

160‧‧‧sequence controller

210‧‧‧ thin film transistor

211‧‧‧active layer

212‧‧‧Gate

214‧‧‧ Drain

215‧‧‧Source

220‧‧‧Gate insulation

230‧‧‧Interlayer insulation

240‧‧‧ passivation layer

250‧‧‧ flattening layer

260‧‧‧Organic light-emitting device

261‧‧‧First electrode

262‧‧‧Organic light emitting layer

263‧‧‧Second electrode

270‧‧‧shore

280‧‧‧Sealing layer

281‧‧‧first inorganic layer

282‧‧‧Organic layer

283‧‧‧Second inorganic layer

290‧‧‧Sealing layer

291‧‧‧The first color filter

292‧‧‧Second color filter

292a‧‧‧Second color filter layer

293‧‧‧Third color filter

294‧‧‧Transparent organic layer

300‧‧‧ Black Matrix

300a‧‧‧Reflective metal layer

301‧‧‧black matrix layer

310‧‧‧ inorganic layer

311‧‧‧ tail

320‧‧‧ Adhesive layer

330‧‧‧ particles

340‧‧‧ scattering layer

FIGS. 1A to 1C are schematic diagrams of a decrease in aperture ratio and color mixing caused by design errors of a black matrix, a color filter, and a bank layer. FIG. 2 is a perspective view of a display device according to an embodiment of the invention. FIG. 3 is a plan view of the first substrate, gate driver, source driver integrated circuit, flexible film, circuit board, and timing controller in FIG. 2 according to an embodiment of the present invention. FIG. 4 is a plan view illustrating an example of pixels in a display area according to an embodiment of the present invention. Fig. 5 is a cross-sectional view taken along a section line I-I 'in Fig. 4. FIG. 6 is a flowchart of a manufacturing method of a display device according to an embodiment of the present invention. FIGS. 7A to 7G are cross-sectional views taken along a section line I-I 'for describing a manufacturing method of a display device according to an embodiment of the present invention. FIG. 8 is a cross-sectional view taken along a section line I-I 'in FIG. 4 according to an embodiment of the present invention. FIG. 9 is a cross-sectional view taken along a section line I-I 'in FIG. 4 according to an embodiment of the present invention. 10A to 10C are cross-sectional views showing different structures of a color filter including particles for scattering light. FIG. 11 is a plan view showing another example of pixels in a display area. FIG. 12A is a cross-sectional view taken along section line II-II 'in FIG. 11 according to an embodiment of the present invention. FIG. 12B is a cross-sectional view taken along section line III-III 'in FIG. 11 according to an embodiment of the present invention. FIG. 13 is a flowchart of a manufacturing method of a display device according to another embodiment of the present invention. 14A to 14F are cross-sectional views taken along a section line II-II 'for describing a method for manufacturing a display device according to another embodiment of the present invention. FIG. 15 is a cross-sectional view taken along section line II-II 'in FIG. 11 according to an embodiment of the present invention. FIG. 16A is a cross-sectional view taken along section line II-II 'in FIG. 11 according to an embodiment of the present invention. FIG. 16B is a cross-sectional view taken along section line III-III 'in FIG. 11 according to an embodiment of the present invention. FIG. 17 is a flowchart of a manufacturing method of a display device according to another embodiment of the present invention. 18A to 18H are cross-sectional views taken along a section line II-II 'for describing a manufacturing method of a display device according to another embodiment of the present invention.

Claims (7)

A display device includes a first substrate, a second substrate facing the first substrate, and a sub-pixel array disposed on the first substrate. The sub-pixel array includes: a first sub-pixel A pixel and a second sub-pixel adjacent to the first sub-pixel; a first color filter on the first sub-pixel and a second color on the second sub-pixel A filter, wherein the first color filter is physically separated from the second color filter; an inorganic layer is placed on an upper surface of one of the first color filters and is separated from the second color filter An upper surface of one of the light filters and an area between the first color filter and the second color filter; and a black matrix placed between the first color filter and the second color filter One of the inorganic layers in the region between the light sheets is on the upper surface. The display device according to claim 1, wherein a top surface of the black matrix and a top surface of a portion of the inorganic layer disposed on the first color filter and the second color filter are aligned. The display device according to claim 1, wherein the inorganic layer is composed of indium tin oxide (ITO), indium zinc oxide (IZO), silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiON), and oxide At least one of aluminum (Al2O3) is formed. The display device according to claim 1, further comprising a sealing layer on the first sub-pixel and the second sub-pixel, wherein the sealing layer, the first color filter and the second color The filters are in contact. The display device according to claim 1, wherein the second substrate is in contact with the first color filter and the second color filter. The display device according to claim 1, wherein the first color filter and the second color filter include a plurality of particles, and the particles are used to scatter light. The display device according to claim 1, wherein a thickness of the black matrix is smaller than a thickness of each of the first color filter and the second color filter.