TWI628789B - Display device and method of manufacturing the same - Google Patents

Abstract

In one embodiment, a display device includes a substrate, a transistor, a light emitting device, a contact hole, and an auxiliary electrode in the contact hole. The substrate includes an emission area that emits light and a non-emission area that does not emit light. The transistor is located above the substrate. The light emitting device is located above the transistor, and the light emitting device comprises a first electrode, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. The contact hole is located in the emission area of the substrate, and the contact hole is located between the transistor and the light emitting device. The auxiliary electrode electrically connects the first electrode of the light emitting device to the transistor.

Description

Display device and method of manufacturing same

The present invention relates to an organic light emitting display device, a method of fabricating the same, and a head mounted display including the organic light emitting display device.

With the advancement of information-oriented society, various demands for display devices for displaying images are increasing. Therefore, various display devices such as a liquid crystal display device, a plasma display device, an organic light emitting display device, and the like have been recently used.

As one type of display device, the organic light-emitting display device is a self-luminous display device, which is better than a liquid crystal display device in terms of viewing angle and contrast. Further, since the organic light-emitting display device does not require a separate backlight, the organic light-emitting display device can be lightened and thinned, and the organic light-emitting display device excels in power consumption. In addition, the organic light-emitting display device is driven by a low direct current (DC) voltage, has a fast response time, and is low in manufacturing cost.

The organic light-emitting display devices each include an anode, a bank dividing the anode, a hole transport layer formed on the anode, an organic light-emitting layer and an electron transport layer, and a cathode formed on the electron transport layer. In this case, when a high level voltage is applied to the anode and a low level voltage is applied to the cathode, the holes and electrons respectively move through the hole transport layer and the electron transport layer toward the organic light emitting layer, and in the organic light emitting layer. Combine to emit light.

In the organic light-emitting display device, a region in which an anode, an organic light-emitting layer, and a cathode are sequentially stacked is an emissive area that emits light, and a region in which a berm is provided is a non-emission region that does not emit light. The berm defines the launch area.

The anode is connected to the source or the drain of the thin-film transistor (TFT) through the contact hole, and is supplied with a high level voltage. Due to the step height of the contact hole, it is difficult for the organic light-emitting layer to be uniformly deposited on the contact hole, whereby the organic light-emitting layer is not formed in the contact hole. That is, the berm covers the contact hole.

Recently, since a small-sized organic light-emitting display device applied to a mobile device or the like has high resolution, the pixel size is remarkably lowered. However, the contact holes are formed by a photo process, and the contact holes cannot be formed to be smaller than a specific size due to limitations of the photo processing. That is to say, although the pixel size is reduced, there is a limit in reducing the contact hole.

The contact hole is placed in the non-emission region, whereby if the pixel size is reduced, the area ratio of the non-emission region becomes higher, and the area ratio of the emission region becomes lower. If the area ratio of the emission area becomes lower, the luminance of the emission area should be increased, and for this reason, the lifetime of the organic light-emitting layer is lowered.

Recently, the industry is developing head-mounted displays each including an organic light-emitting display device. The head mounted display is a spectacle type monitoring device for virtual reality (VR), which is worn in the form of glasses or a helmet and forms a focus at a distance close to the eyes of the user. However, in a head-mounted display, the image displayed by the organic light-emitting display device is seen just in front of the user's eyes. For this reason, if the ratio of the area occupied by the non-emission region in each pixel is high, A non-emission region is seen in the lattice pattern shown in FIG.

Accordingly, the present disclosure is directed to an organic light emitting display device, a method of fabricating the same, and a head-mounted display (HMD) including the organic light-emitting display device, substantially avoiding the limitations and disadvantages of the prior art. Or multiple questions.

An aspect of the present invention provides an organic light emitting display device, a method of fabricating the same, and a head mounted display including the organic light emitting display device, which improve the life of the organic light emitting layer.

Another aspect of the present disclosure is to provide an organic light emitting display device, a method of fabricating the same, and a head mounted display including the organic light emitting display device, which avoids seeing a non-emission region in a lattice pattern.

In one embodiment, a display device includes: a substrate, an emission region that emits light and a non-emission region that does not emit light; a transistor above the substrate; a light-emitting device located above the transistor, the light-emitting device includes a first electrode, first a light-emitting layer on the electrode and a second electrode on the light-emitting layer; a contact hole in the emission region of the substrate, the contact hole being located between the transistor and the light-emitting device; and an auxiliary electrode in the contact hole, the auxiliary electrode being the first of the light-emitting device The electrodes are electrically connected to the transistor.

In one embodiment, a method of manufacturing a display device includes: forming a substrate, the substrate includes an emission region that emits light and a non-emissive region that does not emit light; forming a transistor on the substrate; forming a light-emitting device over the transistor to form a light-emitting device The method comprises: forming a first electrode, a light-emitting layer on the first electrode and a second electrode on the light-emitting layer; forming a contact hole in the emission region of the substrate, the contact hole being formed between the transistor and the light-emitting device; and forming in the contact hole An auxiliary electrode that electrically connects the first electrode of the light emitting device to the transistor.

In one embodiment, a display device includes: a substrate, an emission region that emits light and a non-emitting region that does not emit light; a transistor above the substrate, the transistor includes a first electrode, a second electrode, and a gate; and a planarization layer Located on the transistor; the contact hole is located in a portion of the planarization layer, the contact hole is located in the emission region of the substrate, the contact hole exposes a portion of the first electrode of the transistor; the auxiliary electrode is located above the planarization layer, and the auxiliary layer is filled Contacting at least a portion of the contact hole and contacting the exposed portion of the first electrode of the transistor; and illuminating means on the auxiliary electrode, the first electrode of the illuminating device electrically connecting the first electrode of the transistor via the auxiliary electrode.

Other advantages and features of the present invention will be set forth in part in the description which follows, and <RTIgt; It is derived from the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the <RTIgt;

In order to obtain the objects and other features of the present invention, the present invention will be described in detail and broadly described. The present invention provides an organic light emitting display device.

Another aspect of the present invention provides a method of fabricating an organic light emitting display device.

It is to be understood that the foregoing general description of the invention and the claims

Representative embodiments of the present invention will now be described in detail in conjunction with the drawings. The same reference numbers are used in the drawings to refer to the same or like parts.

Advantages and features of the present invention, as well as methods of achieving such advantages or features, will be apparent from the embodiments described herein. However, the invention is not limited to the embodiments, but may be modified in various forms. The present invention is provided so that this disclosure will be thorough and complete, and the scope of the invention will be fully conveyed by those skilled in the art. Further, the scope of the invention is only defined by the scope of the patent application.

The shapes, dimensions, ratios, angles and numbers disclosed in the drawings for describing the embodiments of the present invention are merely representative, and thus the invention is not limited to the details shown. The same reference numerals denote the same elements. In the following description, a detailed description of related functions or configurations is omitted when it is determined that the gist of the present invention is unnecessarily obscured.

When "include" and "have" are used in the manual, another part can be added unless "only ~" is used. A singular term includes a plural form unless it is indicated that it does not include the plural.

When interpreting a component, the component is interpreted to contain an error region, even if not explicitly described.

For example, when describing the positional relationship, when the positional order is described as "above ~", "above ~", "below ~", and "adjacent ~", it may be included unless "just" or "direct" is used. No contact.

For example, when describing the time relationship, when the time sequence is described as "~after", "~subsequent", "~ next", and "~ before", discontinuous may be included unless "just" or "direct" is used. Case.

It will be understood that, although the terms "first," "second," and the like may be used herein to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and similarly, a second element could be termed a first element, without departing from the scope of the invention.

Further, the X-axis direction, the Y-axis direction, and the Z-axis direction are not limited only to a geometric relationship between the vertical relationship, and have a wider directionality within the range of operation of the element function of the present invention.

It should be understood that the term "at least one of" encompasses all combinations of any one. For example, "at least one of the first item, the second item, and the third item" includes all combinations of two or more elements selected from the first item, the second item, and the third item, and each of the first items, The second and third items.

Features of various embodiments of the invention may be coupled and combined in part or in whole with one another and in a variety of manners and technically driven in a manner that is well understood by those skilled in the art. Embodiments of the invention may be performed independently of one another or may be performed collectively in accordance with a coexistence relationship.

Hereinafter, representative embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a perspective view of an organic light emitting display device 100 according to an embodiment of the present disclosure. 3 is a plan view showing the first substrate, the gate driver, the source driver integrated circuit (IC), the flexible film, the circuit board, and the timing controller of FIG. 2 according to an embodiment of the present invention.

Referring to FIG. 2 and FIG. 3 , the organic light emitting display device 100 of the embodiment of the present disclosure includes a display panel 110 , a gate driver 120 , a source driver integrated circuit 130 , a flexible film 140 , a circuit board 150 , and a timing controller 160 .

The display panel 110 includes a first substrate 111 and a second substrate 112. The second substrate 112 is a package substrate. Each of the first substrate 111 and the second substrate 112 is plastic or glass.

A plurality of gate lines, a plurality of data lines, and a plurality of pixels P are provided on one surface of the first substrate 111 facing the second substrate 112. A pixel P is provided in each of a plurality of regions defined at the intersection of the gate line and the data line.

Each pixel P includes a thin film transistor and an organic light emitting device, wherein the organic light emitting device includes a first electrode, an organic light emitting layer and a second electrode. Typically, the thin film transistor can be replaced by any suitable type of transistor. For example, the transistor includes a first control electrode (eg, a source in a field effect transistor example), a second control electrode (eg, a drain in a field effect transistor example), and a first control electrode and a control A control electrode that controls the flow of current between the electrodes (eg, a gate in a field effect transistor example). When the gate signal is input through the gate line, each pixel P supplies a certain current to the organic light-emitting device by using the thin film transistor according to the data voltage supplied through the data line. Therefore, according to a certain current, the organic light-emitting device of each pixel P emits light having a certain brightness. Each pixel P will be described in detail in conjunction with FIG.

As shown in FIG. 3, the display panel 110 is divided into a display area DA and a non-display area NDA. A pixel P is provided at the display area DA to display an image, and a non-display area NDA does not display an image. A gate line, a data line, and a pixel P are provided in the display area DA. A gate driver 120 and a plurality of pads are provided in the non-display area NDA.

In accordance with the gate control signal input from the timing controller 160, the gate driver 120 sequentially supplies the gate signal to the gate line. A gate driver 120 is provided in a non-display area NDA on one side or both sides of the display area DA of the display panel 110 of the gate driver-in panel (GIP) type in the panel. Alternatively, the gate driver 120 can be fabricated as a drive wafer and mounted on the flexible film, and can be bonded to the display area DA of the tape automated bonding (TAB) type display panel 110. On the side or both sides of the non-display area NDA.

The source driver integrated circuit 130 receives the digital timing data and the source control signal from the timing controller 160. According to the source control signal, the source driver integrated circuit 130 converts the digital video data into an analog data voltage, and supplies the analog data voltage to the data line, respectively. If the source driver integrated circuit 130 is fabricated as a driving wafer, the source driver integrated circuit 130 is mounted on a chip-on film (COF) type or a chip-on plastic (COP) type. On the flexible film 140.

A plurality of pads, such as a data pad, are provided in the non-display area NDA of the display panel 110. A line connecting the pad to the source driver integrated circuit 130 and a line connecting the pads to the circuit board 150 are provided on the flexible film 140. The flexible film 140 is bonded to the pad by an anisotropic film, whereby the pad connects the wiring of the flexible film 140.

The circuit board 150 is bonded to a plurality of flexible films 140 provided. A plurality of circuits implemented to drive the wafer are mounted on the circuit board 150. For example, the timing controller 160 is mounted on the circuit board 150. The circuit board 150 is a printed circuit board (PCB) or a flexible printed circuit board (FPCB).

The timing controller 160 receives digital video data and timing signals from an external system board (not shown) through a cable of the circuit board 150. Based on the timing signal, the timing controller 160 generates a gate control signal and a source control signal. The gate control signal is used to control the operation timing of the gate driver 120. The source control signal is used to control the plurality of source driver integrated circuits 130 provided. The timing controller 160 supplies the gate control signal to the gate driver 120 and supplies the source control signal to the plurality of source driver integrated circuits 130.

Fig. 4 is a detailed plan view showing an example of a pixel in a display area of an embodiment. Figure 5 is a cross-sectional view showing an example of a line I-I' of Figure 4 in an embodiment.

Referring to FIG. 4 and FIG. 5, the buffer layer 210 is formed on one surface of the first substrate 111 facing the second substrate 112. The buffer layer 210 is formed on one surface of the first substrate 111 for protecting the plurality of thin film transistors 220 and the plurality of organic light-emitting devices 280 from moisture permeation through the first substrate 111 which is easily permeable to moisture. The buffer layer 210 includes a plurality of inorganic layers that are alternately stacked. For example, the buffer layer 210 is formed of a plurality of layers in which one or more of silicon oxide (SiOx), silicon nitride (SiNx), and bismuth oxynitride (SiON) are alternately stacked. The buffer layer 210 can be omitted.

The thin film transistor 220 is formed on the buffer layer 210. Each of the thin film transistors 220 includes an active layer 221, a gate 222, a source 223, and a drain 224. In FIG. 5, the figure schematically shows that the thin film transistor 220 is formed in a top gate type in which the gate electrode 222 is formed on the active layer 221, but is not limited thereto. That is, the thin film transistor 220 may be formed as a double gate type in which the gate 222 is placed under the active layer 221 or the gate 222 is placed above and below the active layer 221.

The active layer 221 is formed on the buffer layer 210. The active layer 221 is formed of a germanium-based semiconductor material or an oxide-based semiconductor material. The light blocking layer forms a buffer layer 210 and the active layer 221 for blocking external light from entering the active layer 221.

A gate insulating layer 230 is formed on the active layer 221. The gate insulating layer 230 is formed of an inorganic layer such as yttrium oxide (SiOx), tantalum nitride (SiNx), or a plurality of layers thereof.

The gate 222 and the gate line are formed on the gate insulating layer 230. The gate 222 and the gate line are each formed of a single layer or a plurality of layers, wherein the single layer or layers include molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), niobium (Nd), and copper (Cu). One of them or an alloy thereof.

The interlayer insulating layer 240 is formed of a gate 222 and a gate line. The interlayer insulating layer 240 is formed of an inorganic layer such as yttrium oxide (SiOx), tantalum nitride (SiNx), or a plurality of layers thereof.

The source 223, the drain 224, and the data line are formed on the interlayer insulating layer 240. Each of the source 223 and the drain 224 contacts the active layer 221 through the contact hole C1, wherein the contact hole C1 penetrates the gate insulating layer 230 and the interlayer insulating layer 240. The source electrode 223, the drain electrode 224 and the data line are each formed of a single layer or a plurality of layers, wherein the single layer or layers comprise molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), niobium (Nd) and copper. One of (Cu) or an alloy thereof.

A passivation layer 250 for insulating thin film transistor 220 is formed on source 223, drain 224, and data lines. The passivation layer 250 is formed of an inorganic layer such as yttrium oxide (SiOx), tantalum nitride (SiNx), or a plurality of layers thereof.

A first planarization layer 260 is formed over the passivation layer 250 for planarizing the step height caused by the thin film transistor 220. The first planarization layer 260 is composed of an organic layer such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, and/or the like. form.

The contact hole CNT penetrates the passivation layer 250 and the first planarization layer 260 and exposes a portion of the drain 224 of the thin film transistor 220 formed in the passivation layer 250 and the first planarization layer 260. As shown in FIG. 4, a contact hole CNT is formed to overlap the emission area EA. In FIG. 4, a part of the contact hole CNT overlaps with the emission area EA as shown, but is not limited thereto. In other embodiments, the entire portion of the contact hole CNT may overlap the emission area EA.

The auxiliary electrode 281a is formed on the first planarization layer 260. The auxiliary electrode 281a is connected to the drain 224 of the thin film transistor 220 through the contact hole CNT. In FIG. 5, the auxiliary electrode 281a contacts the drain 224 of the thin film transistor 220 as shown, but may be connected to the source 223 of the thin film transistor 220. In addition, as shown in FIG. 5, the auxiliary electrode 281a partially fills a portion of the contact hole CNT. Further, as shown in FIG. 5, the auxiliary electrode 281a is directly connected to the electrode of the light-emitting device 280 and the electrode of the thin film transistor 220.

The second planarization layer 270 is formed on the auxiliary electrode 281a. The second planarization layer 270 is filled in the remaining portion of the contact hole CNT for flattening the step height caused by the contact hole CNT. The second planarization layer 270 is formed of an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like.

The second planarization layer 270 is formed to cover the contact holes CNT for filling the step height of the contact holes CNT. Therefore, as shown in FIG. 4, the second planarization layer 270 is formed to be wider than the contact hole CNT. However, the disclosed embodiments are not limited thereto. In other embodiments, the second planarization layer 270 is formed to be equal to or narrower than the contact hole CNT. In one embodiment, the width of the contact hole CNT is wider than the emission area EA. Alternatively, the width of the contact hole CNT is smaller than the width of the emission area EA. In one embodiment, the contact holes CNT and the emission area EA have varying overlapping ranges. For example, 10% to 95% of the contact holes CNT overlap with the emission area EA.

In addition, as shown in FIG. 4, the second planarization layer 270 is formed to be wider than the emission area EA. In this case, the first electrode 281b, the organic light-emitting layer 282, and the second electrode 283 are formed on the second planarization layer 270 in the emission region EA, whereby the organic light-emitting layer 282 is formed to have a uniform thickness in the emission region EA. The emission area EA thus outputs uniform light.

Due to the characteristics of the manufacturing process of the second planarization layer 270, the thickness t2 of the second planarization layer 270 is adjusted to be thicker than the thickness t1 of the first planarization layer 260. Therefore, a portion (eg, a central portion) of the second planarization layer 270 has a thickness thicker than that of the first planarization layer 260. The reason why the thickness t2 of the second planarization layer 270 is adjusted to be thicker than the thickness t1 of the first planarization layer 260 will be described in detail with reference to FIGS. 8A and 8B.

The organic light emitting device 280 is formed on the second planarization layer 270. The organic light-emitting device 280 includes a first electrode 281b, an organic light-emitting layer 282, and a second electrode 283. A region in which the first electrode 281b, the organic light-emitting layer 282, and the second electrode 283 are stacked is defined as an emission region EA. The first electrode 281b is an anode, and the second electrode 283 is a cathode.

The first electrode 281b is formed on the second planarization layer 270. As shown in FIG. 4, the first electrode 281b is formed to be wider than the auxiliary electrode 281a, whereby the auxiliary electrode 281a not covered by the second planarization layer 270 can be connected to the first electrode 281b. In Fig. 4, the first electrode 281b and the auxiliary electrode 281a are shown in contact with each other on both sides of the contact hole CNT, but the embodiment is not limited thereto. In other embodiments, the first electrode 281b and the auxiliary electrode 281a may be connected to each other outside at least one side of the contact hole CNT.

The auxiliary electrode 281a and the first electrode 281b are formed of the same material. Alternatively, each of the auxiliary electrode 281a and the first electrode 281b is formed of one metal layer or two or more metal layers.

Each of the auxiliary electrode 281a and the first electrode 281b is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material is a transparent conductive material (or transparent conductive oxide (TCO)) such as indium tin oxide (ITO) or indium zinc oxide (IZO), or half A conductive material such as magnesium (Mg), silver (Ag) or an alloy of magnesium and silver is transmitted. The opaque conductive material is a stack of aluminum, silver, molybdenum, molybdenum and titanium (Mo/Ti), a stack of copper, aluminum and titanium, a stack of aluminum and indium tin oxide (ITO/Al/ITO), or silver. , a stack structure of palladium and copper (APC) alloy and indium tin oxide (ITO/APC/ITO). The APC alloy is an alloy of silver, palladium (Pd) and copper.

For example, the first electrode 281b is formed as a stacked structure of two or more layers including a conductive material having a high reflectance like aluminum or silver and a transparent conductive material, and the auxiliary electrode 281a is made of molybdenum, molybdenum, and titanium. A low-resistance material of a stacked structure (Mo/Ti), copper or a stacked structure of aluminum and titanium (Ti/Al/Ti) is formed. Further, in order to maximize the widening of the reflective area, the first electrode 281b is formed of a transparent conductive material, and the auxiliary electrode 281a may be formed of a highly reflective conductive material such as aluminum or silver.

A berm 284 is formed on the first planarization layer 260 to cover the edge of the first electrode 281b for defining the emission area EA. The area forming the berm 284 is unable to emit light, and thus is defined as a non-emission area. For example, a first berm (for example, a left berm) is formed over the first overlapping portion (eg, the left end) of the auxiliary electrode 281a, the second planarizing layer 270, and the first electrode 281b of the light emitting device. Further, a second berm (for example, a right berm) is formed on the second overlapping portion (for example, the right end) of the auxiliary electrode 281a, the second planarizing layer 270, and the first electrode 281b of the light-emitting device. The portion of the auxiliary electrode 281a that is not covered by the first berm and the second berm defines the width of the emission area EA. That is, the berm 284 defines the launch area EA. The third thickness t3 of the berm 284 is adjusted to be thicker than the distance t4 between the first planarization layer 260 and the organic light-emitting layer 282. Further, in the embodiment shown in FIG. 5, the thickness of the berm 284 is uniform.

The second planarization layer 270 may be convexly formed. Since the second planarizing layer 270 has a convex shape as shown in FIG. 5, the second planarizing layer 270 has a non-uniform thickness. Further, the organic light-emitting layer 282 can be formed by a process such as an evaporation deposition process which is not good in step coverage characteristics, thereby being thinly formed in the inclined portion of the second planarization layer 270. Therefore, the charge generating layer and the second electrode 283 of the first electrode 281b or the organic light emitting layer 282 may be short-circuited in the inclined portion of the second planarizing layer 270. The step cover represents a layer deposited by a specific deposition process, connected in a portion forming a step height without being disconnected. However, in the embodiment of the present disclosure, since the berm 284 is formed to cover the inclined portion of the second planarization layer 270, the charge generation layer of the first electrode 281b or the organic light-emitting layer 282 and the second electrode 283 are prevented from being in the second planarization. The inclined portion of the layer 270 is short-circuited.

The organic light-emitting layer 282 is formed on the first electrode 281b and the berm 284. The organic light-emitting layer 282 includes a hole transport layer, a light-emitting layer, and an electron transport layer. In this case, when a voltage is applied to the first electrode 281b and the second electrode 283, the holes and the electrons respectively move through the hole transport layer and the electron transport layer toward the light emitting layer, and are combined with each other to emit light in the light emitting layer. .

The organic light-emitting layer 282 is a white light-emitting layer that emits white light. In this case, as shown in FIG. 5, the organic light-emitting layer 282 is formed to cover the first electrode 281b and the berm 284. Further, in this case, a plurality of color filters 321 to 323 are formed to cover the emission area EA.

Alternatively, the organic light-emitting layer 282 includes a red light-emitting layer that emits red light, a green light-emitting layer that emits green light, and a blue light-emitting layer that emits blue light. In this case, the emission area EA is divided into a red emission area that emits red light, a green emission area that emits green light, and a blue emission area that emits blue light, and each of the red emission area, the green emission area, and the blue emission area. One does not contain color filters. The red light-emitting layer is formed on the first electrode 281b in the red emission region, the green light-emitting layer is formed on the first electrode 281b in the green emission region, and the blue light-emitting layer is formed on the first electrode 281b in the blue emission region.

The second electrode 283 is formed on the organic light emitting layer 282. The second electrode 283 is made of a transparent conductive material (or a transparent conductive oxide) such as indium tin oxide (ITO) or indium zinc oxide (IZO) capable of transmitting light, or a semi-transmissive conductive material such as magnesium, silver or an alloy of magnesium and silver. form. A capping layer is formed on the second electrode 283.

The encapsulation layer 290 is formed on the second electrode 283. The encapsulation layer 290 prevents oxygen or water from penetrating into the organic light-emitting layer 282 and the second electrode 283. To this end, the encapsulation layer 290 comprises at least one inorganic layer and at least one organic layer. In FIG. 5, the encapsulation layer 290 is shown to include the first inorganic layer 291, the organic layer 292, and the second inorganic layer 293, but is not limited thereto.

The first inorganic layer 291 is formed on the second electrode 283 to cover the second electrode 283. The organic layer 292 is formed on the first inorganic layer 291 to cover the first inorganic layer 291. The organic layer 292 is formed to a sufficient thickness for preventing particles from penetrating into the organic light-emitting layer 282 and the second electrode 283 via the first inorganic layer 291. The second inorganic layer 293 is formed on the organic layer 292 to cover the organic layer 292.

Each of the first inorganic layer 291 and the second inorganic layer 293 is made of tantalum nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride. , tantalum nitride, cerium oxide, aluminum oxide, titanium oxide, and/or the like. The organic layer 292 is formed of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like.

The color filters 321 to 323 and the black matrix 310 are formed on the second substrate 112 facing the first substrate 111. A red color filter 323 is formed in the red emission region, a blue color filter 322 is formed in the blue emission region, and a green color filter 321 is formed in the green emission region. A black matrix (BM) 310 is placed between the color filters 321 to 323. If the organic light-emitting layer 282 includes a red light-emitting layer that emits red light, a green light-emitting layer that emits green light, and a blue light-emitting layer that emits blue light, the color filters 321 to 323 and the black matrix 310 may be omitted.

The encapsulation layer 290 of the first substrate 111 and the color filters 321 to 323 of the second substrate 112 are bonded to each other through the adhesive layer 330, whereby the first substrate 111 and the second substrate 112 are bonded to each other. The adhesive layer 330 is a transparent adhesive resin.

As described above, in the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, and the second planarization layer 270 is filled into the contact hole CNT for planarizing the step height of the contact hole CNT. Therefore, in the embodiment of the present disclosure, the organic light-emitting layer is formed on the second planarization layer 270 to have a uniform thickness, whereby the emission region EA is evenly output even when the contact hole CNT is formed to overlap the emission region EA. Light.

Further, since the organic light-emitting device deteriorates over time, it is important to extend the life of the organic light-emitting device in the organic light-emitting display device. If the area of the emission area where the organic light-emitting layer emits light is enlarged, the life of the organic light-emitting device is prolonged. In the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, whereby the area of the emission region EA does not depend on the area of the contact hole CNT. As a result, in the embodiment of the present disclosure, the area of the emission area EA is designed to be independent of the area of the contact hole CNT, whereby the area of the emission area EA is maximized, thereby increasing the life of the organic light-emitting layer.

In addition, in the embodiment of the present disclosure, since the area of the emission area EA is maximized, the area of the non-emission area is minimized. Therefore, if the embodiment of the present disclosure is applied to a head mounted display, it is avoided to see a non-emission area in the lattice pattern.

6 is a flow chart of a method of fabricating an organic light emitting display device according to an embodiment of the present disclosure. 7A to 7G are schematic cross-sectional views along line II' for describing a method of fabricating the organic light-emitting display device of the disclosed embodiment.

7A to 7G are views showing a method of manufacturing the organic light-emitting display device shown in Fig. 5, and thus the same reference numerals denote the same elements. Hereinafter, a method of manufacturing the organic light-emitting display device of the embodiment of the present disclosure will be described in detail with reference to FIG. 6 and FIGS. 7A to 7G.

First, as shown in FIG. 7A, a thin film transistor 220, a passivation layer 250, and a first planarization layer 260 are formed on the first substrate 111.

Before the thin film transistor 220 is formed, the buffer layer 210 is formed on the first substrate 111 for protecting the thin film transistor 220 and the organic light emitting device 280 from moisture permeation through the first substrate 111. The buffer layer 210 is formed of a plurality of inorganic layers alternately stacked for protecting the thin film transistor 220 and the organic light-emitting device 280 from moisture permeation through the first substrate 111 which is easily penetrated by moisture. For example, the buffer layer 210 is formed of a plurality of layers of one or more of tantalum oxide, tantalum nitride, and hafnium oxynitride. The buffer layer 210 is formed by a chemical vapor deposition (CVD) process.

Next, the active layer 221 included in the thin film transistor 220 is formed on the buffer layer 210. In detail, an active metal layer is formed over the entire buffer layer 210 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the active layer 221 is formed by patterning the active metal layer by a mask process using a photoresist pattern. The active layer 221 is formed of a germanium-based semiconductor material or an oxide-based semiconductor material.

Next, a gate insulating layer 230 is formed on the active layer 221. The gate insulating layer 230 is formed of an inorganic layer such as hafnium oxide, tantalum nitride or a plurality of layers thereof. The gate insulating layer 230 is formed by a chemical vapor deposition (CVD) process.

Next, the gate electrode 222 and the gate line included in the thin film transistor 220 are formed on the gate insulating layer 230. In detail, a first metal layer is formed over the entire gate insulating layer 230 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the gate electrode 222 and the gate line are formed by patterning the first metal layer by a mask process using a photoresist pattern. The gate 222 and the gate line are each formed of a single layer or a plurality of layers, wherein the single layer or the plurality of layers comprise molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), niobium (Nd) and copper (Cu). One of them or its alloy.

Next, an interlayer insulating layer 240 is formed on the gate 222. The interlayer insulating layer 240 is formed of an inorganic layer such as hafnium oxide, tantalum nitride or a plurality of layers thereof. The interlayer insulating layer 240 is formed by a chemical vapor deposition (CVD) process.

Next, a contact hole C1 is formed which penetrates the gate insulating layer 230 and the interlayer insulating layer 240 and exposes the active layer 221.

Next, the source electrode 223 and the drain electrode 224 and the data line included in the thin film transistor 220 may be formed on the interlayer insulating layer 240. In detail, a second metal layer is formed over the entire interlayer insulating layer 240 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the source pattern 223, the drain 224, and the data line are formed by patterning the second metal layer by the mask process using the photoresist pattern. The source electrode 223 and the drain 224 are in contact with the active layer 221 through the contact hole C1 penetrating the gate insulating layer 230 and the interlayer insulating layer 240 and exposing the active layer 221. The source electrode 223, the drain electrode 224 and the data line are each formed of a single layer or a plurality of layers, wherein the single layer or the plurality of layers comprise molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), niobium (Nd) and copper. (Cu) one of them or an alloy thereof.

Next, a passivation layer 250 is formed on the source 223 and the drain 224 of the thin film transistor 220. The passivation layer 250 is formed of an inorganic layer such as hafnium oxide, tantalum nitride or a plurality of layers thereof. The passivation layer 250 is formed by a chemical vapor deposition (CVD) process.

Next, a first planarization layer 260 is formed on the passivation layer 250 for planarizing the step height caused by the thin film transistor 220. The passivation layer 250 is formed of an inorganic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and the like (or S101 of FIG. 6).

Next, as shown in FIG. 7B, a contact hole CNT is formed which penetrates the passivation layer 250 and the first planarization layer 260 and exposes the source 223 or the drain 224 of the thin film transistor 220 (S102 of FIG. 6).

Third, as shown in FIG. 7C, the auxiliary electrode 281a is formed on the first planarization layer 260. The auxiliary electrode 281a is connected to the source 223 or the drain 224 of the thin film transistor 220 through the contact hole CNT.

In detail, a third metal layer is formed over the entire first planarization layer 260 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the photoresist pattern is used through the mask process, and the third metal layer is patterned to form the auxiliary electrode 281a.

The auxiliary electrode 281a is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material may be a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) (or a transparent conductive oxide), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or An alloy of magnesium and silver. The opaque conductive material may be aluminum, silver, molybdenum, a stacked structure of molybdenum and titanium (Mo/Ti), a stacked structure of copper, aluminum and titanium, a stacked structure of aluminum and indium tin oxide (ITO/Al/ITO), APC. Alloy, or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy is an alloy of silver, palladium (Pd) and copper. (S103 of Figure 6)

Fourth, as shown in FIG. 7D, the second planarization layer 270 is formed on the auxiliary electrode 281a. The second planarization layer 270 is filled into the contact hole CNT for planarizing the step height caused by the contact hole CNT.

In detail, as shown in FIG. 8A, an organic material 270' is coated on the first planarization layer 260 and the auxiliary electrode 281a. The organic material 270' may be an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like. The organic material 270' is formed on the first planarization layer 260 and the auxiliary electrode 281a by a slit coating process, a spin coating process, an evaporation process, and the like. The organic material 270' is filled into the contact hole CNT.

Next, as shown in FIG. 8B, finally, the mask M is placed on the contact hole CNT, and then the photolithography process is performed to complete the development process on the organic material 270' in the region where the mask M is not placed. As a result, the second planarization layer 270 is formed to cover the contact holes CNT.

As described above, as shown in FIGS. 8A and 8B, in the case where the second planarization layer 270 is formed by a photolithography process, the second planarization layer 270 is filled into the contact hole CNT, and further, is formed to cover the first flat A portion of the auxiliary electrode 281a formed on the layer 260. Therefore, as shown in FIGS. 8A and 8B, in the case where the second planarization layer 270 is formed by a photolithography process, the thickness t2 of the second planarization layer 270 is adjusted to be thicker than the thickness t1 of the first planarization layer 260. Therefore, the second planarization layer 270 is formed to be wider than the contact hole CNT. (S104 of Figure 6)

Fifth, as shown in FIG. 7E, the first electrode 281b is formed on the second planarization layer 270. The first electrode 281b connects the auxiliary electrode 281a on the first planarization layer 260 that is not covered by the second planarization layer 270.

In detail, a fourth metal layer is formed over the entire first planarization layer 260 and the second planarization layer 270 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the first electrode 281b is formed by patterning the fourth metal layer by a mask process using a photoresist pattern.

The first electrode 281b is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material may be a transparent conductive material (or TCO) such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or an alloy of magnesium and silver. . The opaque conductive material may be aluminum, silver, molybdenum, a stacked structure of molybdenum and titanium (Mo/Ti), a stacked structure of copper, aluminum and titanium, a stacked structure of aluminum and indium tin oxide (ITO/Al/ITO), APC. Alloy, or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy can be an alloy of silver, palladium (Pd) and copper. (S105 of Figure 6)

Sixth, as shown in FIG. 7F, the berm 284, the organic light-emitting layer 282, the second electrode 283, and the encapsulation layer 290 are sequentially formed.

First, a berm 284 is formed to cover the edge of the first electrode 281b for defining the emission area EA. The berm 284 is formed of an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like.

Next, the organic light-emitting layer 282 is formed on the first electrode 281b and the berm 284. The organic light-emitting layer 282 can be formed through a deposition process or a solution process. In the case where the organic light-emitting layer 282 is formed through a deposition process, the organic light-emitting layer 282 can be formed through an evaporation process.

In the case where the organic light-emitting layer 282 is collectively formed in the plurality of emission regions EA, the organic light-emitting layer 282 is formed as a white light-emitting layer that emits white light. If the organic light-emitting layer 282 is a white light-emitting layer, the organic light-emitting layer 282 is formed into two or more stacked tandem structures. Each stack includes a hole transport layer, at least one light emitting layer, and an electron transport layer. Further, a charge generating layer is formed between the stacks. The charge generating layer includes an n-type charge generating layer and a p-type charge generating layer. An n-type charge generation layer is placed adjacent to the lower stack. A p-type charge generating layer is formed on the n-type charge generating layer and placed adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generating layer is formed of an organic layer doped with an alkali metal or an alkali earth metal. The alkali metal is, for example, lithium (Li), sodium (Na), potassium (K) or cesium (Cs), and the alkaline earth metal is, for example, magnesium, strontium (Sr), barium (Ba) or radium (Ra). The p-type charge generating layer is formed by doping a dopant on an organic material capable of transporting holes.

Next, the second electrode 283 is formed on the organic light-emitting layer 282. The second electrode 283 is a common layer that is commonly formed in the plurality of emission regions EA. The second electrode 283 is formed of a transparent conductive material (or TCO) such as indium tin oxide (ITO) or indium zinc oxide (IZO) capable of transmitting light, or a semi-transmissive conductive material such as magnesium, silver or an alloy of magnesium and silver. A cover layer is formed on the second electrode 283.

Next, an encapsulation layer 290 is formed on the second electrode 283. The encapsulation layer 290 prevents oxygen or water from penetrating into the organic light-emitting layer 282 and the second electrode 283. To this end, the encapsulation layer 290 comprises at least one inorganic layer and at least one organic layer.

For example, the encapsulation layer 290 includes a first inorganic layer 291, an organic layer 292, and a second inorganic layer 293. In this case, the first inorganic layer 291 is formed to cover the second electrode 283. The organic layer 292 is formed to cover the first inorganic layer 291. The organic layer 292 is formed to a sufficient thickness to prevent particles from penetrating into the organic light-emitting layer 282 and the second electrode 283 via the first inorganic layer 291. A second inorganic layer 293 is formed to cover the organic layer 292.

Each of the first inorganic layer 291 and the second inorganic layer 293 is made of tantalum nitride, aluminum nitride, zirconium nitride, titanium nitride, tantalum nitride, tantalum nitride, hafnium oxide, aluminum oxide, titanium oxide, and/or And so on. The organic layer 292 is formed of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like. (S106 of Figure 6)

Seventh, as shown in FIG. 7G, the first substrate 111 is bonded to the second substrate 112 by bonding the encapsulation layer 290 of the first substrate 111 to the color filters 321 to 323 of the second substrate 112 by using the adhesive layer 330. The adhesive layer 330 is a transparent adhesive resin. (S107 of Figure 6)

Fig. 9 is a schematic cross-sectional view showing another example taken along line I-I' of Fig. 4.

9 is substantially the same as described above in connection with FIG. 5 except that the second planarization layer 270 is formed to cover the step height caused by the second planarization layer 270 between the berm 284 and the first electrode 281b. Therefore, in FIG. 9, a detailed description of components other than the berm 284 is not repeated.

A berm 284 is formed on the first planarization layer 260 to cover the edge of the first electrode 281b for defining the emission area EA. The area where the berm 284 is formed cannot emit light, and thus is defined as a non-emission area. For example, a first berm (eg, a left berm) is formed over a first overlap (eg, left end) of the auxiliary electrode 281a, a second planarization layer 270, and a first electrode 281b of the illumination device. Further, a second berm (for example, a right berm) is formed on the second overlapping portion (for example, the right end) of the auxiliary electrode 281a, the second planarizing layer 270, and the first electrode 281b of the light-emitting device. A portion of the auxiliary electrode 281a that is not covered by the first berm and the second berm defines the width of the emission area EA. That is, the berm 284 defines the launch area EA. The thickness t5 of the berm 284 is adjusted to be thinner than the thickness t6 of the second planarizing layer 270. As shown in FIG. 9, the thickness of the berm 284 is not uniform. In addition, as shown in FIG. 9, the second planarization layer 270 included in the first overlapping portion and the first electrode 281b of the light-emitting device 280 and the second planarization layer 270 included in the second overlapping portion and the first of the light-emitting device The electrode 281b is inclined at an angle corresponding to the non-uniform thickness of the first berm and the second berm.

The second planarization layer 270 may be convexly formed. Since the second planarization layer 270 has a convex shape as shown in FIG. 9, the second planarization layer 270 has a non-uniform thickness. Further, the organic light-emitting layer 282 can be formed by a process such as an evaporation deposition process which is not good in step coverage characteristics, thereby being thinly formed in the inclined portion of the second planarization layer 270. Therefore, the charge generating layer and the second electrode 283 of the first electrode 281b or the organic light emitting layer 282 may be short-circuited in the inclined portion of the second planarizing layer 270. The step coverage means that the layer deposited by a certain deposition process is connected in a portion where the step height is formed without being disconnected. However, in the embodiment of the present disclosure, since the berm 284 is formed to cover the inclined portion of the second planarization layer 270, the charge generation layer of the first electrode 281b or the organic light-emitting layer 282 and the second electrode 283 are prevented from being in the second planarization. The inclined portion of the layer 270 is short-circuited.

FIG. 10 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 11A to 11C are schematic cross-sectional views along line II' for describing a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure.

In addition to the forming operation of the berm 284, the organic light-emitting layer 282, the second electrode 283, and the encapsulation layer 290 in the operation S106 of FIG. 6, the manufacturing method of the organic light-emitting display device according to another embodiment of the present disclosure shown in FIG. 10 is implemented. The same as described above in connection with FIG. 6 and FIGS. 7A to 7G. Therefore, hereinafter, the formation work of the berm 284, the organic light-emitting layer 282, the second electrode 283, and the encapsulation layer 290 will be described in detail with reference to FIG. 10 and FIGS. 11A to 11C. 11A to 11C are views showing a method of manufacturing the organic light-emitting display device shown in Fig. 9, and the same reference numerals are used to denote the same elements.

Hereinafter, the jobs S201 to S203 will be described in detail with reference to FIG. 10 and FIGS. 11A to 11C.

First, as shown in FIG. 11A, an organic material 284' is coated on the first planarization layer 260 and the first electrode 281b.

The organic material 284' may be an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like. The organic material 284' is formed on the first planarization layer 260 and the first electrode 281b by a slit coating process, a spin coating process, an evaporation process, and/or the like. The organic material 284' is formed to fill the second planarization layer 270. (S201 of Figure 10)

Next, as shown in FIG. 11B, the berm 284 is formed by dry etching the organic material 284' without using a mask. Since the mask is not used, the present disclosure reduces manufacturing costs. Further, the dry etching material is selected to be a material that etches the organic material 284' but cannot etch the first electrode 281b.

In the case where the berm 284 is formed by a dry etching process, the berm 284 is filled into the second planarization layer 270. In particular, the berm 284 that is filled into the second planarization layer 270 can be formed by dry etching bumps. Therefore, when the berm 284 is formed by the dry etching process, the thickness t5 of the berm 284 is adjusted to be thinner than the thickness t6 of the second planarizing layer 270. (S202 of Figure 10)

Next, as shown in FIG. 11C, the organic light-emitting layer 282, the second electrode 283, and the encapsulation layer 290 are sequentially formed.

Next, the organic light-emitting layer 282 is formed on the first electrode 281b and the berm 284. The organic light-emitting layer 282 is formed through a deposition process or a dissolution process. In the case where the organic light-emitting layer 282 is formed by a deposition process, the organic light-emitting layer 282 is formed through an evaporation process.

In the case where the organic light-emitting layer 282 is collectively formed in a plurality of emission regions EA, the organic light-emitting layer 282 is formed as a white light-emitting layer that emits white light. If the organic light-emitting layer 282 is a white light-emitting layer, the organic light-emitting layer 282 is formed in a two or more stacked series structure. Each stack includes a hole transport layer, at least one light emitting layer, and an electron transport layer. Further, a charge generating layer is formed between the stacks. The charge generating layer includes an n-type charge generating layer and a p-type charge generating layer. An n-type charge generation layer is placed adjacent to the lower stack. A p-type charge generating layer is formed on the n-type charge generating layer and placed adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generating layer is formed of an organic layer doped with an alkali metal or an alkali earth metal such as lithium (Li), sodium (Na), potassium (K) or cesium (Cs). The alkaline earth metal is, for example, magnesium, strontium (Sr), barium (Ba) or radium (Ra). The p-type charge generating layer is formed by doping a dopant on an organic material capable of transporting holes.

Next, the second electrode 283 is formed on the organic light-emitting layer 282. The second electrode 283 is a common layer that is commonly formed in the plurality of emission regions EA. The second electrode 283 is formed of a transparent conductive material (or TCO) such as indium tin oxide (ITO) or indium zinc oxide (IZO) capable of transmitting light, or a semi-transmissive conductive material such as magnesium, silver or an alloy of magnesium and silver. A cover layer is formed on the second electrode 283.

Next, an encapsulation layer 290 is formed on the second electrode 283. The encapsulation layer 290 prevents oxygen or moisture from penetrating into the organic light-emitting layer 282 and the second electrode 283. To this end, the encapsulation layer 290 comprises at least one inorganic layer and at least one organic layer.

For example, the encapsulation layer 290 includes a first inorganic layer 291, an organic layer 292, and a second inorganic layer 293. In this case, the first inorganic layer 291 is formed to cover the second electrode 283. The organic layer 292 is formed to cover the first inorganic layer 291. The organic layer 292 is formed to a sufficient thickness to prevent particles from penetrating into the organic light-emitting layer 282 and the second electrode 283 via the first inorganic layer 291. A second inorganic layer 293 is formed to cover the organic layer 292.

Each of the first inorganic layer 291 and the second inorganic layer 293 is made of tantalum nitride, aluminum nitride, zirconium nitride, titanium nitride, tantalum nitride, tantalum nitride, hafnium oxide, aluminum oxide, titanium oxide, and/or And so on. The organic layer 292 is formed of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like. (S203 of Figure 10)

Figure 12 is a detailed plan view showing another example of a pixel in a display area. Fig. 13 is a schematic cross-sectional view showing an example taken along line II-II' of Fig. 12.

The pixels P of the organic light-emitting display device shown in FIGS. 12 and 13 are substantially the same as those described above in connection with FIGS. 4 and 5 except for the second planarization layer 270, the auxiliary electrode 281a, and the first electrode 281b. Therefore, in FIGS. 12 and 13, detailed descriptions of elements other than the second planarization layer 270, the auxiliary electrode 281a, and the first electrode 281b are not repeated.

The auxiliary electrode 281a is formed on the first planarization layer 260. The auxiliary electrode 281a is connected to the drain 224 of the thin film transistor 220 through the contact hole CNT. In FIG. 13, the auxiliary electrode 281a is shown as contacting the drain 224 of the thin film transistor 220, but may be connected to the source 223 of the thin film transistor 220.

The second planarization layer 270 is formed on the auxiliary electrode 281a. The second planarization layer 270 is filled in the contact hole CNT for planarizing the step height caused by the contact hole CNT. The second planarization layer 270 is filled into the contact hole CNT such that the thickness of the second planarization layer 270 is smaller than the thickness of the contact hole CNT, and the thickness of the second planarization layer 270 is smaller than the thickness of the first planarization layer 260. The second planarization layer 270 is formed of an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like.

The second planarization layer 270 is formed to fill the contact holes CNT for filling the step height of the contact holes CNT. Therefore, in FIG. 13, the second planarization layer 270 is shown to be substantially the same as the contact hole CNT, but the embodiment is not limited thereto. In other embodiments, the second planarization layer 270 may be formed to be thinner than the thickness of the contact hole CNT.

Due to the characteristics of the manufacturing process of the second planarization layer 270, the thickness t7 of the second planarization layer 270 is adjusted to be smaller than the thickness t1 of the first planarization layer 260. The reason why the thickness t7 of the second planarization layer 270 is adjusted to be smaller than the thickness t1 of the first planarization layer 260 will be described in detail with reference to FIGS. 15A and 15B.

The first electrode 281b is formed on the second planarization layer 270. As shown in FIG. 12, the first electrode 281b is formed to be wider than the auxiliary electrode 281a. Further, as shown in FIG. 12, each of the auxiliary electrode 281a and the first electrode 281b is formed to be wider than the second planarization layer 270. Since the second planarization layer 270 is formed to fill only the contact hole CNT, the auxiliary electrode 281a is connected to the first electrode 281b on the first planarization layer 260. In Fig. 13, the first electrode 281b and the auxiliary electrode 281a are shown to be in contact with each other on both sides of the contact hole CNT, but the embodiment is not limited thereto. In other embodiments, the first electrode 281b and the auxiliary electrode 281a are connected to each other outside at least one side of the contact hole CNT.

The auxiliary electrode 281a and the first electrode 281b may be formed of the same material. Alternatively, each of the auxiliary electrode 281a and the first electrode 281b is formed of one metal layer or two or more metal layers.

Each of the auxiliary electrode 281a and the first electrode 281b is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material may be a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) (or a transparent conductive oxide), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or magnesium. Alloy with silver. The opaque conductive material may be a stack structure of aluminum, silver, molybdenum, molybdenum and titanium (Mo/Ti), a stack structure of aluminum and titanium, a stack structure of aluminum and indium tin oxide (ITO/Al/ITO), an APC alloy, Or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy can be an alloy of silver, palladium and copper.

For example, the first electrode 281b is formed as a stacked structure of two or more layers including a conductive material having a high reflectance like aluminum or silver and a transparent conductive material, and the auxiliary electrode 281a is made of molybdenum, molybdenum, and titanium. A stacked structure (Mo/Ti), copper, or a material having a low electrical resistance such as a stacked structure of aluminum and titanium (Ti/Al/Ti) is formed. Further, in order to maximize the widening of the reflective area, the first electrode 281b is formed of a transparent conductive material, and the auxiliary electrode 281a is formed of a highly reflective conductive material such as aluminum or silver.

FIG. 14 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 15A and 15B are schematic cross-sectional views along line II-II' for describing a method of fabricating an organic light-emitting display device according to another embodiment of the present disclosure.

In addition to the forming operation of the second planarizing layer 270 in the operation S104 of FIG. 6, the manufacturing method of the organic light emitting display device of the other embodiment shown in FIG. 14 is substantially the same as described above in connection with FIG. 6 and FIGS. 7A to 7G. The content is the same. Therefore, the forming operation of the second planarizing layer 270 will be described in detail below with reference to FIGS. 14, 15A and 15B. 15A and 15B are views showing a method of manufacturing the organic light-emitting display device shown in Fig. 13, and the same reference numerals are used to designate the same elements.

Operations S301 and S302 are described in detail below with reference to FIGS. 14, 15A and 15B.

First, as shown in FIG. 15A, an organic material 270' is applied onto the first planarization layer 260 and the auxiliary electrode 281a. The organic material 270' may be an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like. The organic material 270' is formed on the first planarization layer 260 and the auxiliary electrode 281a by a slit spraying process, a spin coating process, an evaporation process, and/or the like. The organic material 270' is filled in the contact hole CNT.

Next, as shown in FIG. 15B, the second planarization layer 270 is formed by dry etching the organic material 270' without using a mask. Since the mask is not used, the present disclosure reduces manufacturing costs. In addition, the dry etching material is selected as a material that etches the organic material 270' but does not etch the auxiliary electrode 281a.

As described above, in the case where the second planarization layer 270 is formed by the dry etching process, the second planarization layer 270 is filled only into the contact holes CNT. In particular, the second planarization layer 270 filled into the contact holes CNT is formed by dry etching bumps as compared with the first planarization layer 260. Therefore, in the case where the second planarization layer 270 is formed by the dry etching process, the thickness t7 of the second planarization layer 270 is adjusted to be smaller than the thickness t1 of the first planarization layer 260. Therefore, the second planarization layer 270 is substantially the same as the contact hole CNT, but may be formed to be shorter than the height of the contact hole CNT.

Fig. 16 is a schematic cross-sectional view showing another example taken along line II-II' of Fig. 12.

16 is substantially the same as that described above in connection with FIG. 5 except that the auxiliary electrode 281a is formed in place of the second planarization layer 270 to fill the contact hole CNT. Therefore, in FIG. 16, the second planarization layer 270 can be omitted. Therefore, in Fig. 16, a detailed description of the relevant elements other than the auxiliary electrode 281a will not be repeated.

The auxiliary electrode 281a is formed on the first planarization layer 260. The auxiliary electrode 281a is connected to the drain 224 of the thin film transistor 220 through the contact hole CNT. In Fig. 5, the auxiliary electrode 281a is shown in contact with the drain 224 of the thin film transistor 220, but the source 223 of the thin film transistor 220 can be connected.

The auxiliary electrode 281a is filled into the contact hole CNT for flattening the step height caused by the contact hole CNT. That is, the auxiliary electrode 281a is formed to completely fill the contact hole CNT (for example, covering the contact hole CNT) for filling the step height of the contact hole CNT. Therefore, as shown in FIG. 16, the auxiliary electrode 281a is formed to be wider than the contact hole CNT. However, embodiments of the present disclosure are not limited thereto. In other embodiments, the auxiliary electrode 281a is formed to be equal to or narrower than the contact hole CNT.

In addition, the auxiliary electrode 281a is formed to be wider than the emission area EA. In this case, the first electrode 281b, the organic light-emitting layer 282, and the second electrode 283 are formed on the auxiliary electrode 281a in the emission region EA, whereby the organic light-emitting layer 282 is formed into a uniform thickness in the emission region EA, thereby emitting The area EA outputs uniform light.

The auxiliary electrode 281a is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material may be a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) (or a transparent conductive oxide), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or magnesium. Alloy with silver. The opaque conductive material may be aluminum, silver, molybdenum, a stacked structure of molybdenum and titanium (Mo/Ti), a stacked structure of copper, aluminum and titanium, a stacked structure of aluminum and indium tin oxide (ITO/Al/ITO), APC. Alloy, or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy can be an alloy of silver, palladium and copper.

As described above, in the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, and the auxiliary electrode 281a is filled into the contact hole CNT for planarizing the step height of the contact hole CNT. Therefore, in the embodiment of the present disclosure, the organic light-emitting layer 282 is formed on the auxiliary electrode 281a to have a uniform thickness. Thereby, even when the contact holes CNT are formed to overlap the emission area EA, the emission area EA uniformly outputs light.

In addition, since the organic light-emitting device deteriorates with the passage of time, it is very important to extend the life of the organic light-emitting device in the organic light-emitting display device. If the area of the emission region where the organic light-emitting layer emits light is enlarged, the life of the organic light-emitting device is also prolonged. In the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, whereby the area of the emission region EA does not depend on the area of the contact hole CNT. As a result, in the embodiment of the present disclosure, the area of the emission area EA is designed to be independent of the area of the contact hole CNT, whereby the area of the emission area EA is maximized, thereby increasing the life of the organic light-emitting layer.

In addition, in the embodiment of the present disclosure, since the area of the emission area EA is maximized, the area of the non-emission area is minimized. Therefore, if the embodiment of the present disclosure is applied to a head mounted display, it is avoided to see the non-emission area in a lattice pattern.

17 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 18A to 18C are schematic cross-sectional views along line II-II' for describing a method of fabricating an organic light-emitting display device according to another embodiment of the present disclosure.

The operations S401, S402, S405, and S406 of the method of manufacturing the organic light-emitting display device according to another embodiment of the present invention shown in FIG. 17 are substantially the same as the operations S101, S102, S106, and S107 of FIG. Therefore, the detailed description of the operations S401, S402, S405, and S406 of the manufacturing method of the organic light-emitting display device of another embodiment of the present invention shown in FIG. 17 will not be repeated. 18A to 18C are views showing a method of manufacturing the organic light-emitting display device shown in Fig. 16, and the same reference numerals are used to designate the same elements.

The jobs S403 to S404 are described in detail below with reference to FIG. 17 and FIGS. 18A to 18C.

First, as shown in FIG. 18A, a third metal layer 281a' filling the contact holes CNT is formed over the entire first planarization layer 260. In order to fill the contact hole CNT, the third metal layer 281a' is formed by coating and hardening the conductive layer in a liquid state.

Next, as shown in FIG. 18B, a fourth metal layer 281b' is formed over the entire third metal layer 281a'. The fourth metal layer 281b' is formed by a sputtering process, a metal organic chemical vapor deposition process, and/or the like.

Next, the auxiliary electrode 281a and the first electrode 281b are formed by simultaneously patterning the third metal layer 281a' and the fourth metal layer 281b' by the mask process using the photoresist pattern.

Each of the auxiliary electrode 281a and the first electrode 281b is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material is a transparent conductive material (or transparent conductive oxide) such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or magnesium. Silver alloy. The opaque conductive material may be aluminum, silver, molybdenum, a stacked structure of molybdenum and titanium (Mo/Ti), a stacked structure of copper, aluminum and titanium, a stacked structure of aluminum and indium tin oxide (ITO/Al/ITO), APC. Alloy, or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy is an alloy of silver, palladium and copper.

For example, the first electrode 281b is formed as a stacked structure of two or more layers including a conductive material having a high reflectance like aluminum or silver and a transparent conductive material, and the auxiliary electrode 281a is made of molybdenum, molybdenum, and titanium. A stacked structure (Mo/Ti), copper, or a material having a low electrical resistance such as a stacked structure of aluminum and titanium (Ti/Al/Ti) is formed. Further, in order to maximize the widening of the reflective area, the first electrode 281b is formed of a transparent conductive material, and the auxiliary electrode 281a is formed of a highly reflective conductive material such as aluminum or silver. (S403 and S404 in Figure 17)

Fig. 19 is a detailed plan view showing another example of a pixel in a display area.

The pixel P of Fig. 19 is substantially the same as that described above in connection with Fig. 4 except that the pixel P is provided as a square in the pixel region shown in Fig. 19. Therefore, in Fig. 19, a detailed description of the relevant elements of the pixel P is omitted.

According to an embodiment of the present disclosure, the pixel P may be provided as a square as shown in FIG. 19, and in this case, in other directions (horizontal) as compared with the case where each pixel in FIG. 4 is provided as a rectangle The area of the emission area EA is enlarged with one direction (vertical direction), thereby further widening the emission area EA. Therefore, in the embodiment of the present disclosure, the life of the organic light-emitting layer is improved, and further, the area of the non-emission region is minimized.

Further, according to the embodiment of the present disclosure, the pixel P is provided as a square as shown in Fig. 19. In this case, the first electrode 281b is connected to the auxiliary electrode 281a outside the entire side surface of the contact hole CNT. Therefore, even when a process error occurs when the auxiliary electrode 281a, the first electrode 281b, and the contact hole CNT are formed, the first electrode 281b can connect the auxiliary electrode 281a outside the at least one side of the contact hole CNT.

The cross-sectional structure along the line III-III' of Fig. 19 is substantially the same as the cross-sectional view taken along line I-I' of Fig. 5 or the cross-sectional view taken along line I-I' of Fig. 9.

Figure 20 is a detailed plan view showing another example of a pixel in a display area.

The pixel P of Fig. 20 is substantially the same as that described above in connection with Fig. 12 except that the pixel P in the display area shown in Fig. 20 is provided as a square. Therefore, in Fig. 20, a detailed description of the relevant elements of the pixel P is omitted.

According to an embodiment of the present disclosure, the pixel P in FIG. 20 is provided as a square, in which case, in the other direction (lateral direction) and one direction (in comparison with the case where each pixel in FIG. 12 is provided as a rectangle) The vertical direction) enlarges the area of the emission area EA, thereby further widening the emission area EA. Therefore, in the embodiment of the present disclosure, the life of the organic light-emitting layer is improved, and further, the area of the non-emission region is minimized.

Further, according to the embodiment of the present disclosure, the pixel P in Fig. 20 is provided in a square shape, in which case the first electrode 281b is connected to the auxiliary electrode 281a outside the entire side surface of the contact hole CNT. Therefore, even when a process error occurs when the auxiliary electrode 281a, the first electrode 281b, and the contact hole CNT are formed, the first electrode 281b can connect the auxiliary electrode 281a outside the at least one side of the contact hole CNT.

The cross-sectional structure along line IV-IV' of Fig. 20 is substantially the same as the cross-sectional view taken along line II-II' of Fig. 13 or the cross-sectional view taken along line II-II' of Fig. 16.

21A and 21B are schematic diagrams showing a head-mounted display according to an embodiment of the present disclosure.

Referring to FIGS. 21A and 21B, the head mounted display of the disclosed embodiment includes a display housing 10, a left eye lens 20a, a right eye lens 20b, and a head mountable strap 30.

The display housing case 10 houses the display device, and supplies the image displayed by the display device to the left-eye lens 20a and the right-eye lens 20b. The display device may be an organic light emitting display device of an embodiment of the present invention. The organic light emitting display device of the embodiment of the present invention has been described in detail in conjunction with FIGS. 2 to 20.

The display housing case 10 is designed to supply the same image to the left-eye lens 20a and the right-eye lens 20b. Alternatively, the display housing case 10 is designed such that the left eye image is displayed on the left eye lens 20a and the right eye image is displayed on the right eye lens 20b.

As shown in FIG. 22, the left-eye organic light-emitting display device 11 placed in front of the left-eye lens 20a and the right-eye organic light-emitting display device 12 placed in front of the right-eye lens 20b are housed in the display housing case 10. Fig. 22 is a schematic cross-sectional view showing the housing case 10 as seen from above. The left-eye organic light-emitting display device 11 displays a left-eye image, and the right-eye organic light-emitting display device 12 displays a right-eye image. The left eye LE of the user sees the left eye image displayed by the left eye organic light emitting display device 11 through the left eye lens 20a, and the right eye RE of the user sees the right eye displayed by the right eye organic light emitting display device 12 through the right eye lens 20b. Eye image.

In addition, in FIG. 22, a magnifying lens may be further disposed between the left-eye lens 20a and the left-eye organic light-emitting display device 11 and between the right-eye lens 20b and the right-eye organic light-emitting display device 12. In this case, the image displayed on the left-eye organic light-emitting display device 11 and the image displayed on the right-eye organic light-emitting display device 12 are enlarged and viewed by the user due to the magnifying lens.

As shown in FIG. 23, the specular reflector 13 placed in front of the left-eye lens 20a and the right-eye lens 20b and the organic light-emitting display device 14 placed on the specular reflector 13 are housed in the display housing case 10. Fig. 23 is a schematic cross-sectional view showing the accommodating case 10 as viewed from the side. The organic light-emitting display device 14 displays an image in the direction toward the specular reflector 13, and the specular reflector 13 totally reflects the image displayed by the organic light-emitting display device 14 in the direction of the left-eye lens 20a and the right-eye lens 20b. Therefore, the image displayed by the organic light-emitting display device 14 is supplied to the left-eye lens 20a and the right-eye lens 20b. In Fig. 23, for convenience of description, only the left eye lens 20a and the left eye LE of the user are shown in the drawing. As shown in FIG. 23, in the case where the specular reflector 13 is used, the display housing case 10 can be provided thinly.

In addition, in FIG. 22, a magnifying lens may be further disposed between the left-eye lens 20a and the specular reflector 13 and between the right-eye lens 20b and the specular reflector 13. In this case, the image displayed on the left-eye organic light-emitting display device 11 and the image displayed on the right-eye organic light-emitting display device 12 are enlarged and viewed by the user due to the magnifying lens.

The head mount strap 30 is fixed to the display housing case 10. The headgear strap 30 is representatively provided to surround the top and sides of the user, but is not limited thereto. The headgear strap 30 can secure the head mounted display to the user's head and be implemented as a glasses or helmet.

In the head-mounted display of the prior art, the image displayed by the organic light-emitting display device is seen just in front of the user's eyes, because for this reason, as shown in Fig. 1, the non-emission region is seen in a lattice pattern. However, in the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, and the second planarization layer 270 is filled in the contact hole CNT for planarizing the step height of the contact hole CNT. Therefore, in the embodiment of the present disclosure, the organic light-emitting layer is formed on the second planarization layer 270 to have a uniform thickness, whereby the emission region EA is uniformly output even when the contact hole CNT is formed to overlap the emission region EA. Light. Therefore, in the embodiment of the present disclosure, since the area of the emission area EA is maximized, the area of the non-emission area is minimized. Therefore, if the embodiment of the present disclosure is applied to a head mounted display, the non-emission area is prevented from being seen in a lattice pattern as shown in FIG.

As described above, according to the embodiment of the present disclosure, the contact holes are formed to overlap the emission regions, and the second planarization layer is filled in the contact holes, thereby planarizing the step height of the contact holes. Therefore, according to an embodiment of the present disclosure, the organic light-emitting layer is formed on the second planarization layer to have a uniform thickness, whereby the emission region can uniformly output light even when a contact hole is formed to overlap the emission region.

Further, according to the embodiment of the present disclosure, since the contact holes are formed to overlap the emission regions, the area of the emission regions does not depend on the area of the contact holes. As a result, according to the embodiment of the present disclosure, the area of the emission area is designed to be independent of the area of the contact hole, whereby the area of the emission area is maximized, thereby increasing the life of the organic light-emitting layer.

Additionally, in accordance with embodiments of the present disclosure, since the area of the emission area is maximized, the area of the non-emission area is minimized. Therefore, in the case where the embodiment of the present disclosure is applied to a head mounted display, it is avoided that the non-emission area is seen in a lattice pattern.

Further, in accordance with an embodiment of the present disclosure, a berm is formed to cover the inclined portion of the second planarization layer. Therefore, according to the embodiment of the present disclosure, the organic light-emitting layer is thinly formed in the inclined portion of the second planarization layer, thereby avoiding occurrence of a short circuit between the charge generating layer of the first electrode or the organic light-emitting layer and the second electrode.

In addition, according to an embodiment of the present disclosure, each pixel is provided as a square, in which case, in other directions (lateral direction) and one direction (vertical direction), compared to the case where each pixel is provided as a rectangle. The area of the emission area can be enlarged, thereby further widening the emission area. Therefore, in the embodiment of the present disclosure, the life of the organic light-emitting layer is improved, and further, the area of the non-emission region is minimized. The present disclosure eliminates the lattice pattern of the image displayed by the head mounted display.

Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.

100‧‧‧Organic light-emitting display device
110‧‧‧ display panel
DA‧‧‧ display area
NDA‧‧‧ non-display area
P‧‧‧ pixels
111‧‧‧First substrate
112‧‧‧second substrate
120‧‧‧gate driver
130‧‧‧Source Driver Integrated Circuit
140‧‧‧Flexible film
150‧‧‧ boards
160‧‧‧Sequence Controller
EA‧‧‧ launch area
CNT‧‧‧ contact hole
C1‧‧‧ contact hole
210‧‧‧buffer layer
220‧‧‧film transistor
221‧‧‧ active layer
222‧‧‧ gate
223‧‧‧ source
224‧‧‧汲polar
230‧‧‧ gate insulation
240‧‧‧Interlayer insulation
250‧‧‧ Passivation layer
260‧‧‧First flattening layer
270‧‧‧Second flattening layer
270'‧‧‧Organic materials
280‧‧‧Organic lighting device
281a‧‧‧Auxiliary electrode
281a'‧‧‧ third metal layer
281b‧‧‧first electrode
281b'‧‧‧ fourth metal layer
282‧‧‧Organic light-emitting layer
283‧‧‧second electrode
284‧‧‧Berm
284'‧‧‧Organic materials
290‧‧‧Encapsulation layer
291‧‧‧First inorganic layer
292‧‧‧Organic layer
293‧‧‧Second inorganic layer
310‧‧‧Black matrix
321, 322, 323‧‧‧ color filters
330‧‧‧Adhesive layer
T1‧‧‧ thickness
T2‧‧‧ thickness
T3‧‧‧ third thickness
Distance t4‧‧‧
T5‧‧‧ thickness
T6‧‧‧ thickness
T7‧‧‧ thickness
M‧‧‧ mask
10‧‧‧ display housing
11‧‧‧Left eye organic light emitting display device
12‧‧‧right-eye organic light-emitting display device
13‧‧‧ specular reflector
14‧‧‧Organic light-emitting display device
20a‧‧‧Left eye lens
20b‧‧‧right eye lens
30‧‧‧ Headable strap
LE‧‧‧Left eye
RE‧‧‧ right eye

1 is a schematic diagram showing a lattice pattern of an image displayed by a head-mounted display of the prior art. 2 is a perspective view of an organic light emitting display device according to an embodiment of the present disclosure. 3 is a plan view showing the first substrate, the gate driver, the source driving integrated circuit, the flexible film, the circuit board, and the timing controller of FIG. 2 according to the embodiment of the present disclosure. 4 is a detailed plan view showing an example of a pixel in a display area according to an embodiment of the present disclosure. FIG. 5 is a cross-sectional view showing an example of a line I-I' of FIG. 4 according to an embodiment of the present disclosure. 6 is a flow chart of a method of fabricating an organic light emitting display device according to an embodiment of the present disclosure. 7A to 7G are schematic cross-sectional views along line II' for describing a method of fabricating the organic light-emitting display device of the disclosed embodiment. 8A and 8B are schematic cross-sectional views taken along line II', showing the detailed operation of step S105 of Fig. 6 of the embodiment of the present disclosure. Figure 9 is a cross-sectional view showing another example of the line II' of Figure 4 in accordance with an embodiment of the present disclosure. FIG. 10 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 11A to 11C are schematic cross-sectional views along line II' for describing a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. FIG. 12 is a detailed plan view showing another example of pixels in a display area according to an embodiment of the present disclosure. Fig. 13 is a schematic cross-sectional view showing an example taken along line II-II' of Fig. 12. FIG. 14 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 15A and 15B are schematic cross-sectional views along line II-II' for describing a method of fabricating an organic light-emitting display device according to another embodiment of the present disclosure. Fig. 16 is a schematic cross-sectional view showing another example taken along line II-II' of Fig. 12. 17 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 18A to 18C are schematic cross-sectional views along line II-II' for describing a method of fabricating an organic light-emitting display device according to another embodiment of the present disclosure. FIG. 19 is a detailed plan view showing another example of a pixel in a display area according to an embodiment of the present disclosure. FIG. 20 is a detailed plan view showing another example of a pixel in a display area according to an embodiment of the present disclosure. 21A and 21B are schematic diagrams showing a head-mounted display according to an embodiment of the present disclosure. Figure 22 is a schematic illustration of an example of the display housing of Figures 21A and 21B in accordance with one embodiment of the present disclosure. Figure 23 is a schematic illustration of an example of the display containment housing of Figures 21A and 21B in accordance with one embodiment of the present disclosure. FIG. 24 is a schematic diagram showing a lattice pattern of an image displayed on a head mounted display according to an embodiment of the present disclosure.

Claims (20)

A display device comprising: a substrate comprising an emitting region of emitted light and a non-emitting region that does not emit light; a transistor located above the substrate; a first planarizing layer located above the transistor; the substrate a contact hole in the emission region, the contact hole being placed in the first planarization layer and exposing a portion of one of the electrodes of the transistor; an auxiliary electrode in the contact hole being located in the first planarization layer The auxiliary electrode is electrically connected to the electrode of the transistor; and a light emitting device is disposed above the first planarization layer, the light emitting device includes a first electrode electrically connected to the auxiliary electrode, and the first electrode a light emitting layer and a second electrode on the light emitting layer. The display device of claim 1, wherein the auxiliary electrode partially fills a portion of the contact hole. The display device of claim 2, further comprising: a second planarization layer on the auxiliary electrode, the second planarization layer filling a remaining portion of the contact hole, wherein the first electrode of the illumination device is located The second planarization layer is on and in contact with the second planarization layer. The display device of claim 3, wherein one of the second planarization layers has a width wider than a width of the contact hole, and wherein the width of the second planarization layer is wider than the emission area of the substrate. The display device of claim 3, wherein one of the second planarization layers has a width equal to or narrower than a width of the contact hole. The display device of claim 3, wherein the thickness of the second planarization layer is not uniform. The display device of claim 3, wherein a thickness of a portion of the second planarization layer is thicker than a thickness of the first planarization layer. The display device of claim 2, wherein the auxiliary electrode is directly connected to the first electrode of the light emitting device and the electrode of the transistor. The display device of claim 1, wherein one of the contact holes has a width narrower than the emission area of the substrate. The display device of claim 4, wherein a width of one of the first electrodes of the light emitting device is wider than a width of one of the auxiliary electrodes. The display device of claim 3, wherein a portion of the second planar layer is convexly formed. The display device of claim 3, further comprising: a first berm, located at a first overlapping portion of the auxiliary electrode, the second planarizing layer and the first electrode of the light emitting device; and a first a second berm, located above the second overlapping portion of the auxiliary electrode, the second planarizing layer and the first electrode of the light emitting device, wherein the first berm is not covered by the first berm and the second berm One of the auxiliary electrodes defines a width of one of the emission regions. The display device of claim 12, wherein the second planarization layer included in the first overlapping portion and the first electrode of the light emitting device and the second planarization layer included in the second overlapping portion are The first electrode of the illumination device is tilted according to an angle. The display device of claim 12, wherein a thickness of one of the first berms is uniform with a thickness of one of the second berms, and wherein the thickness of the first berm is greater than the thickness of the second berm The distance between the first planarization layer and the light-emitting layer of the light-emitting device is thick. The display device of claim 12, wherein a thickness of one of the first berms is different from a thickness of one of the second berms, and wherein the thickness of the first berm and the thickness of the second berm Thinner than the thickest portion of one of the second planarization layers. The display device of claim 15, wherein a portion of the light-emitting device that overlaps the first berm and the second berm corresponds to an uneven thickness of the first berm and the second berm The angle is tilted. The display device of claim 3, wherein a thickness of the second planarization layer filled in the contact hole is smaller than a thickness of the contact hole, and the thickness of the second planarization layer is smaller than the first planarization One of the thicknesses of the layers. The display device of claim 2, wherein one of the auxiliary electrodes is partially filled in a thickness of one of the contact holes. A manufacturing method of a display device, comprising: forming a substrate, the substrate comprising an emission area of one of the emitted light and a non-emission area of the non-emitted light; forming a transistor on the substrate; forming a first layer above the transistor Flattening layer Forming a contact hole in the emission region of the substrate, the contact hole being formed in the first planarization layer and exposing a portion of one of the electrodes of the transistor; forming an auxiliary electrode in the contact hole, the auxiliary electrode Located on the first planarization layer, and the auxiliary electrode is electrically connected to the electrode of the transistor; and forming a light-emitting device above the first planarization layer, the light-emitting device being formed to include an electrical connection to the auxiliary electrode a first electrode, a light emitting layer on the first electrode and a second electrode on the light emitting layer. A display device comprising: a substrate comprising an emission region of one of the emitted light and a non-emitting region that does not emit light; and a transistor above the substrate, the transistor comprising a first electrode, a second electrode and a gate a planarization layer on the transistor; a contact hole in a portion of the planarization layer, the contact hole being located in the emission region of the substrate, the contact hole exposing the first electrode of the transistor a portion of the auxiliary electrode above the planarization layer, the auxiliary electrode filling at least a portion of the contact hole and the auxiliary electrode contacting the exposed portion of the first electrode of the transistor; and a light emitting device on the auxiliary electrode The first electrode of the illuminating device is electrically connected to the first electrode of the transistor via the auxiliary electrode.