TWI628789B - Display device and method of manufacturing the same - Google Patents
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Abstract
一個實施例中,一種顯示裝置包含基板、電晶體、發光裝置、接觸孔以及接觸孔中的輔助電極。基板包含發射光線之發射區域以及不發射光線之非發射區域。電晶體位於基板上方。發光裝置位於電晶體上方,發光裝置包含第一電極、第一電極上的發光層以及位於發光層上的第二電極。接觸孔位於基板之發射區域中,接觸孔位於電晶體與發光裝置之間。輔助電極將發光裝置之第一電極與電晶體電連接在一起。In one embodiment, a display device includes a substrate, a transistor, a light emitting device, a contact hole, and an auxiliary electrode in the contact hole. The substrate includes an emission area that emits light and a non-emission area that does not emit light. The transistor is located above the substrate. The light emitting device is located above the transistor, and the light emitting device comprises a first electrode, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. The contact hole is located in the emission area of the substrate, and the contact hole is located between the transistor and the light emitting device. The auxiliary electrode electrically connects the first electrode of the light emitting device to the transistor.
Description
本發明係關於一種有機發光顯示裝置及其製造方法以及包含此有機發光顯示裝置之頭戴式顯示器。The present invention relates to an organic light emitting display device, a method of fabricating the same, and a head mounted display including the organic light emitting display device.
隨著資訊導向社會的進步,對於顯示影像之顯示裝置的各種需求也日益增加。因此,近來正在使用各種顯示裝置比如液晶顯示裝置、電漿顯示裝置、有機發光顯示裝置等。With the advancement of information-oriented society, various demands for display devices for displaying images are increasing. Therefore, various display devices such as a liquid crystal display device, a plasma display device, an organic light emitting display device, and the like have been recently used.
作為一種類型的顯示裝置,有機發光顯示裝置係為自發光顯示裝置,在視角與對比度方面比液晶顯示裝置更好。此外,因為有機發光顯示裝置不需要單獨的背光,所以可減輕且薄型化有機發光顯示裝置,並且有機發光顯示裝置在功率消耗方面表現卓越。另外,有機發光顯示裝置係由低直流(direct current;DC)電壓驅動,具有快速的響應時間且製造成本低。As one type of display device, the organic light-emitting display device is a self-luminous display device, which is better than a liquid crystal display device in terms of viewing angle and contrast. Further, since the organic light-emitting display device does not require a separate backlight, the organic light-emitting display device can be lightened and thinned, and the organic light-emitting display device excels in power consumption. In addition, the organic light-emitting display device is driven by a low direct current (DC) voltage, has a fast response time, and is low in manufacturing cost.
有機發光顯示裝置各自包含陽極、劃分陽極之護堤(bank)、陽極上形成的電洞傳輸層、有機發光層與電子傳輸層,以及形成於電子傳輸層上的陰極。這種情況下,當高位準電壓被施加至陽極且低位準電壓被施加至陰極時,電洞與電子分別透過電洞傳輸層與電子傳輸層向有機發光層移動,以及在有機發光層中彼此結合以發射光線。The organic light-emitting display devices each include an anode, a bank dividing the anode, a hole transport layer formed on the anode, an organic light-emitting layer and an electron transport layer, and a cathode formed on the electron transport layer. In this case, when a high level voltage is applied to the anode and a low level voltage is applied to the cathode, the holes and electrons respectively move through the hole transport layer and the electron transport layer toward the organic light emitting layer, and in the organic light emitting layer. Combine to emit light.
有機發光顯示裝置中,順序地堆疊陽極、有機發光層與陰極的區域為發射光線的發射區域(emissive area),以及提供護堤的區域為不發射光線的非發射區域。護堤界定發射區域。In the organic light-emitting display device, a region in which an anode, an organic light-emitting layer, and a cathode are sequentially stacked is an emissive area that emits light, and a region in which a berm is provided is a non-emission region that does not emit light. The berm defines the launch area.
陽極透過接觸孔連接薄膜電晶體(thin-film transistor;TFT)之源極或汲極,以及被供應高位準電壓。由於接觸孔的階梯高度的緣故,有機發光層難以被均勻地沈積於接觸孔上,由此接觸孔中未形成有機發光層。就是說,護堤覆蓋接觸孔。The anode is connected to the source or the drain of the thin-film transistor (TFT) through the contact hole, and is supplied with a high level voltage. Due to the step height of the contact hole, it is difficult for the organic light-emitting layer to be uniformly deposited on the contact hole, whereby the organic light-emitting layer is not formed in the contact hole. That is, the berm covers the contact hole.
近來,因為應用至行動裝置等的小型有機發光顯示裝置具有高解析度,故明顯地降低了畫素尺寸。然而,接觸孔係透過照相製程(photo process)而形成,由於照相製程的限制,接觸孔無法被形成為小於特定尺寸。就是說,盡管減小了畫素尺寸,但是減小接觸孔方面存在限制。Recently, since a small-sized organic light-emitting display device applied to a mobile device or the like has high resolution, the pixel size is remarkably lowered. However, the contact holes are formed by a photo process, and the contact holes cannot be formed to be smaller than a specific size due to limitations of the photo processing. That is to say, although the pixel size is reduced, there is a limit in reducing the contact hole.
接觸孔被放置於非發射區域中,由此,如果畫素尺寸被減小,非發射區域的面積比則變得更高,且發射區域的面積比變得更低。如果發射區域的面積比變得更低,則發射區域的發光亮度應該增加,因為這個原因,有機發光層的壽命被降低。The contact hole is placed in the non-emission region, whereby if the pixel size is reduced, the area ratio of the non-emission region becomes higher, and the area ratio of the emission region becomes lower. If the area ratio of the emission area becomes lower, the luminance of the emission area should be increased, and for this reason, the lifetime of the organic light-emitting layer is lowered.
近來,業界正在發展各自包含有機發光顯示裝置的頭戴式顯示器。頭戴式顯示器為用於虛擬實境(virtual reality;VR)的眼鏡式監視裝置,以眼鏡形式或頭盔形式加以佩戴且在接近使用者眼睛的距離處形成焦點。然而,在頭戴式顯示器中,正好在使用者的眼睛前方看到有機發光顯示裝置所顯示的影像,因為這個原因,如果每一畫素中非發射區域所佔據的面積的比率高,則如圖1所示的格子圖案中看到非發射區域。Recently, the industry is developing head-mounted displays each including an organic light-emitting display device. The head mounted display is a spectacle type monitoring device for virtual reality (VR), which is worn in the form of glasses or a helmet and forms a focus at a distance close to the eyes of the user. However, in a head-mounted display, the image displayed by the organic light-emitting display device is seen just in front of the user's eyes. For this reason, if the ratio of the area occupied by the non-emission region in each pixel is high, A non-emission region is seen in the lattice pattern shown in FIG.
因此,本揭露在於提供一種有機發光顯示裝置及其製造方法以及包含此有機發光顯示裝置之頭戴式顯示器(head-mounted display;HMD),實質上避免習知技術之限制與缺陷所導致的一或多個問題。Accordingly, the present disclosure is directed to an organic light emitting display device, a method of fabricating the same, and a head-mounted display (HMD) including the organic light-emitting display device, substantially avoiding the limitations and disadvantages of the prior art. Or multiple questions.
本揭露一方面在於提供一種有機發光顯示裝置及其製造方法以及包含此有機發光顯示裝置之頭戴式顯示器,改善有機發光層的壽命。An aspect of the present invention provides an organic light emitting display device, a method of fabricating the same, and a head mounted display including the organic light emitting display device, which improve the life of the organic light emitting layer.
本揭露另一方面在於提供一種有機發光顯示裝置及其製造方法以及包含此有機發光顯示裝置之頭戴式顯示器,避免在格子圖案中看到非發射區域。Another aspect of the present disclosure is to provide an organic light emitting display device, a method of fabricating the same, and a head mounted display including the organic light emitting display device, which avoids seeing a non-emission region in a lattice pattern.
一個實施例中,一種顯示裝置包含:基板,包含發射光線之發射區域與不發射光線之非發射區域;基板上方的電晶體;位於電晶體上方的發光裝置,發光裝置包含第一電極、第一電極上的發光層以及發光層上的第二電極;基板之發射區域中的接觸孔,接觸孔位於電晶體與發光裝置之間;以及接觸孔中的輔助電極,輔助電極將發光裝置之第一電極與電晶體電連接在一起。In one embodiment, a display device includes: a substrate, an emission region that emits light and a non-emission region that does not emit light; a transistor above the substrate; a light-emitting device located above the transistor, the light-emitting device includes a first electrode, first a light-emitting layer on the electrode and a second electrode on the light-emitting layer; a contact hole in the emission region of the substrate, the contact hole being located between the transistor and the light-emitting device; and an auxiliary electrode in the contact hole, the auxiliary electrode being the first of the light-emitting device The electrodes are electrically connected to the transistor.
一個實施例中,一種顯示裝置之製造方法包含︰形成基板,基板包含發射光線之發射區域與不發射光線之非發射區域;於基板上形成電晶體;於電晶體上方形成發光裝置,形成發光裝置以包含第一電極、第一電極上的發光層與發光層上的第二電極;於基板之發射區域中形成接觸孔,接觸孔形成於電晶體與發光裝置之間;以及於接觸孔中形成輔助電極,輔助電極將發光裝置之第一電極與電晶體電連接在一起。In one embodiment, a method of manufacturing a display device includes: forming a substrate, the substrate includes an emission region that emits light and a non-emissive region that does not emit light; forming a transistor on the substrate; forming a light-emitting device over the transistor to form a light-emitting device The method comprises: forming a first electrode, a light-emitting layer on the first electrode and a second electrode on the light-emitting layer; forming a contact hole in the emission region of the substrate, the contact hole being formed between the transistor and the light-emitting device; and forming in the contact hole An auxiliary electrode that electrically connects the first electrode of the light emitting device to the transistor.
一個實施例中,一種顯示裝置包含︰基板,包含發射光線之發射區域與不發射光線之非發射區域;基板上方之電晶體,電晶體包含第一電極、第二電極與閘極;平坦化層,位於電晶體上;接觸孔,位於平坦化層之一部分中,接觸孔位於基板之發射區域中,接觸孔暴露電晶體之第一電極之一部分;輔助電極,位於平坦化層上方,輔助層填充接觸孔之至少一部分且輔助電極接觸電晶體之第一電極之暴露部分;以及輔助電極上的發光裝置,發光裝置之第一電極經由輔助電極電連接電晶體之第一電極。In one embodiment, a display device includes: a substrate, an emission region that emits light and a non-emitting region that does not emit light; a transistor above the substrate, the transistor includes a first electrode, a second electrode, and a gate; and a planarization layer Located on the transistor; the contact hole is located in a portion of the planarization layer, the contact hole is located in the emission region of the substrate, the contact hole exposes a portion of the first electrode of the transistor; the auxiliary electrode is located above the planarization layer, and the auxiliary layer is filled Contacting at least a portion of the contact hole and contacting the exposed portion of the first electrode of the transistor; and illuminating means on the auxiliary electrode, the first electrode of the illuminating device electrically connecting the first electrode of the transistor via the auxiliary electrode.
本發明其他的優點和特徵將在如下的說明書中部分地加以闡述,並且本發明其他的優點和特徵對於本領域的普通技術人員來說,可以透過本發明如下的說明得以部分地理解或者可以從本發明的實踐中得出。本發明的目的和其它優點可以透過本發明所記載的說明書和申請專利範圍中特別指明的結構並結合圖式部份,得以實現和獲得。Other advantages and features of the present invention will be set forth in part in the description which follows, and <RTIgt; It is derived from the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the <RTIgt;
為了獲得本發明的這些目的和其他特徵,現對本發明作具體化和概括性的描述,本案提供一種有機發光顯示裝置。In order to obtain the objects and other features of the present invention, the present invention will be described in detail and broadly described. The present invention provides an organic light emitting display device.
本發明另一方面提供一種有機發光顯示裝置之製造方法。Another aspect of the present invention provides a method of fabricating an organic light emitting display device.
可以理解的是,如上所述的本發明之概括說明和隨後所述的本發明之詳細說明均是具有代表性和解釋性的說明,並且是為了進一步揭示本發明之申請專利範圍。It is to be understood that the foregoing general description of the invention and the claims
現在將結合圖式部份對本發明的代表性實施方式作詳細說明。這些圖式部份中所使用的相同的參考標號代表相同或同類部件。Representative embodiments of the present invention will now be described in detail in conjunction with the drawings. The same reference numbers are used in the drawings to refer to the same or like parts.
結合附圖從以下描述的實施例中將顯然看出本發明之優點與特徵以及實現這些優點或特徵之方法。然而,本發明並非限制於這些實施例,而是可依照多種形式被修正。本文提供這些實施例使得本揭露完整且完全,以及將本發明之保護範圍充分傳達至本領域之技術人員。另外,本發明之範圍僅僅由申請專利範圍界定。Advantages and features of the present invention, as well as methods of achieving such advantages or features, will be apparent from the embodiments described herein. However, the invention is not limited to the embodiments, but may be modified in various forms. The present invention is provided so that this disclosure will be thorough and complete, and the scope of the invention will be fully conveyed by those skilled in the art. Further, the scope of the invention is only defined by the scope of the patent application.
圖式中所揭露的用於描述本發明實施例之形狀、尺寸、比率、角度與數目僅僅是代表性的,由此本發明並非受限於所示的細節。同樣的參考標號代表同樣的元件。以下描述中,當相關已知的功能或配置的詳細描述被判定為不必要地混淆本發明的主旨時,將省略其詳細描述。The shapes, dimensions, ratios, angles and numbers disclosed in the drawings for describing the embodiments of the present invention are merely representative, and thus the invention is not limited to the details shown. The same reference numerals denote the same elements. In the following description, a detailed description of related functions or configurations is omitted when it is determined that the gist of the present invention is unnecessarily obscured.
當說明書中使用「包含」與「具有」的情況下,除非使用了「僅僅~」,否則可增加另一零件。除非指出不包含複數形式,否則單數形式的術語包含複數個形式。When "include" and "have" are used in the manual, another part can be added unless "only ~" is used. A singular term includes a plural form unless it is indicated that it does not include the plural.
在解釋元件時,即使沒有明確描述,但是元件也被解釋為包含誤差區域。When interpreting a component, the component is interpreted to contain an error region, even if not explicitly described.
例如,在描述位置關係時,當位置順序被描述為「之上~」、「上方~」、「之下~」以及「鄰近~」時,除非使用「正好」或「直接」,否則可包含不接觸的情況。For example, when describing the positional relationship, when the positional order is described as "above ~", "above ~", "below ~", and "adjacent ~", it may be included unless "just" or "direct" is used. No contact.
例如,描述時間關係時,當時間順序被描述為「~以後」、「~後續」、「~下一個」以及「~以前」時,除非使用「正好」或「直接」,否則可包含不連續的情況。For example, when describing the time relationship, when the time sequence is described as "~after", "~subsequent", "~ next", and "~ before", discontinuous may be included unless "just" or "direct" is used. Case.
應理解,雖然本文使用術語「第一」、「第二」等可用於描述各種元件,但是這些元件不應受到這些術語的限制。這些術語僅僅用於區分一個元件與另一個元件。例如,在不脫離本發明之範圍的情況下,第一元件可被稱為第二元件,以及類似地,第二元件可被稱為第一元件。It will be understood that, although the terms "first," "second," and the like may be used herein to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and similarly, a second element could be termed a first element, without departing from the scope of the invention.
此外,X軸方向、Y軸方向與Z軸方向並非被僅僅限制為之間為垂直關係的幾何關係,以及在本發明之元件功能上作業的範圍內具有更廣泛的方向性。Further, the X-axis direction, the Y-axis direction, and the Z-axis direction are not limited only to a geometric relationship between the vertical relationship, and have a wider directionality within the range of operation of the element function of the present invention.
應理解,術語「至少一個」包含任一項相關的全部組合。例如,「第一項、第二項與第三項中至少一個」包含從第一項、第二項與第三項中選擇之兩個或多個元素的全部組合以及每一第一項、第二項與第三項。It should be understood that the term "at least one of" encompasses all combinations of any one. For example, "at least one of the first item, the second item, and the third item" includes all combinations of two or more elements selected from the first item, the second item, and the third item, and each of the first items, The second and third items.
本發明各個實施例之特徵可彼此部分或全部耦合與結合,以及以本領域技術人員可充分理解的方式彼此以各種方式互相作業且在技術上加以驅動。本發明之實施例可彼此獨立完成,或者可依照共存關係共同完成。Features of various embodiments of the invention may be coupled and combined in part or in whole with one another and in a variety of manners and technically driven in a manner that is well understood by those skilled in the art. Embodiments of the invention may be performed independently of one another or may be performed collectively in accordance with a coexistence relationship.
以下,將結合附圖詳細描述本發明之代表性實施例。Hereinafter, representative embodiments of the present invention will be described in detail with reference to the accompanying drawings.
圖2係為本揭露實施例之有機發光顯示裝置100之透視圖。圖3係為本揭露一個實施例之圖2之第一基板、閘極驅動器、源極驅動積體電路(integrated circuit;IC)、撓性膜、電路板與時序控制器之平面示意圖。2 is a perspective view of an organic light emitting display device 100 according to an embodiment of the present disclosure. 3 is a plan view showing the first substrate, the gate driver, the source driver integrated circuit (IC), the flexible film, the circuit board, and the timing controller of FIG. 2 according to an embodiment of the present invention.
請參考圖2與圖3,本揭露實施例之有機發光顯示裝置100包含顯示面板110、閘極驅動器120、源極驅動器積體電路130、撓性膜140、電路板150與時序控制器160。Referring to FIG. 2 and FIG. 3 , the organic light emitting display device 100 of the embodiment of the present disclosure includes a display panel 110 , a gate driver 120 , a source driver integrated circuit 130 , a flexible film 140 , a circuit board 150 , and a timing controller 160 .
顯示面板110包含第一基板111與第二基板112。第二基板112為封裝基板。第一基板111與第二基板112各自為塑膠或玻璃。The display panel 110 includes a first substrate 111 and a second substrate 112. The second substrate 112 is a package substrate. Each of the first substrate 111 and the second substrate 112 is plastic or glass.
複數條閘極線、複數條資料線與複數個畫素P被提供於面對第二基板112的第一基板111的一個表面上。在閘極線與資料線之交叉處定義的複數個區域中分別提供畫素P。A plurality of gate lines, a plurality of data lines, and a plurality of pixels P are provided on one surface of the first substrate 111 facing the second substrate 112. A pixel P is provided in each of a plurality of regions defined at the intersection of the gate line and the data line.
每一畫素P包含薄膜電晶體與有機發光裝置,其中有機發光裝置包含第一電極、有機發光層與第二電極。通常,薄膜電晶體可由任何類型合適的電晶體代替。舉個例子,電晶體包含第一控制電極(例如,場效應電晶體實例中的源極)、第二控制電極(例如,場效應電晶體實例中的汲極)以及控制第一控制電極與第二控制電極間的電流流動的控制電極(例如,場效應電晶體實例中的閘極)。當透過閘極線輸入閘極訊號時,依照透過資料線供應的資料電壓,每一畫素P利用薄膜電晶體供應一定的電流至有機發光裝置。因此,依照一定的電流,每一畫素P之有機發光裝置發射具有一定亮度的光線。將結合圖4詳細描述每一畫素P。Each pixel P includes a thin film transistor and an organic light emitting device, wherein the organic light emitting device includes a first electrode, an organic light emitting layer and a second electrode. Typically, the thin film transistor can be replaced by any suitable type of transistor. For example, the transistor includes a first control electrode (eg, a source in a field effect transistor example), a second control electrode (eg, a drain in a field effect transistor example), and a first control electrode and a control A control electrode that controls the flow of current between the electrodes (eg, a gate in a field effect transistor example). When the gate signal is input through the gate line, each pixel P supplies a certain current to the organic light-emitting device by using the thin film transistor according to the data voltage supplied through the data line. Therefore, according to a certain current, the organic light-emitting device of each pixel P emits light having a certain brightness. Each pixel P will be described in detail in conjunction with FIG.
如圖3所示,顯示面板110被劃分為顯示區域DA與非顯示區域NDA。在顯示區域DA處提供畫素P以顯示影像,以及非顯示區域NDA不顯示影像。顯示區域DA中提供閘極線、資料線與畫素P。非顯示區域NDA中提供閘極驅動器120與複數個焊墊。 As shown in FIG. 3, the display panel 110 is divided into a display area DA and a non-display area NDA. A pixel P is provided at the display area DA to display an image, and a non-display area NDA does not display an image. A gate line, a data line, and a pixel P are provided in the display area DA. A gate driver 120 and a plurality of pads are provided in the non-display area NDA.
依照從時序控制器160輸入的閘極控制訊號,閘極驅動器120順序地供應閘極訊號至閘極線。在面板中閘極驅動器(gate driver-in panel;GIP)類型的顯示面板110的顯示區域DA一側或兩側外部的非顯示區域NDA中提供閘極驅動器120。或者,閘極驅動器120可被製造為驅動晶片,且被安裝於撓性膜上,此外,可被接合於捲帶式自動接合(tape automated bonding;TAB)類型的顯示面板110的顯示區域DA一側或兩側外部的非顯示區域NDA上。 In accordance with the gate control signal input from the timing controller 160, the gate driver 120 sequentially supplies the gate signal to the gate line. A gate driver 120 is provided in a non-display area NDA on one side or both sides of the display area DA of the display panel 110 of the gate driver-in panel (GIP) type in the panel. Alternatively, the gate driver 120 can be fabricated as a drive wafer and mounted on the flexible film, and can be bonded to the display area DA of the tape automated bonding (TAB) type display panel 110. On the side or both sides of the non-display area NDA.
源極驅動器積體電路130從時序控制器160接收數位時序資料與源極控制訊號。依照源極控制訊號,源極驅動器積體電路130將數位視訊資料轉換為類比資料電壓,以及分別將類比資料電壓供應至資料線。如果源極驅動器積體電路130被製造為驅動晶片,源極驅動器積體電路130以膜上晶片(chip-on film;COF)類型或塑膠上晶片(chip-on plastic;COP)類型被安裝於撓性膜140上。 The source driver integrated circuit 130 receives the digital timing data and the source control signal from the timing controller 160. According to the source control signal, the source driver integrated circuit 130 converts the digital video data into an analog data voltage, and supplies the analog data voltage to the data line, respectively. If the source driver integrated circuit 130 is fabricated as a driving wafer, the source driver integrated circuit 130 is mounted on a chip-on film (COF) type or a chip-on plastic (COP) type. On the flexible film 140.
在顯示面板110的非顯示區域NDA中提供複數個焊墊比如資料墊。在撓性膜140上提供連接焊墊至源極驅動器積體電路130的線路與連接焊墊至電路板150之線路。撓性膜140利用各向異性膜被接合於焊墊上,由此焊墊連接撓性膜140之線路。 A plurality of pads, such as a data pad, are provided in the non-display area NDA of the display panel 110. A line connecting the pad to the source driver integrated circuit 130 and a line connecting the pads to the circuit board 150 are provided on the flexible film 140. The flexible film 140 is bonded to the pad by an anisotropic film, whereby the pad connects the wiring of the flexible film 140.
電路板150接合於提供的複數個撓性膜140上。被實施為驅動晶片的複數個電路被安裝於電路板150上。例如,時序控制器160被安裝於電路板150上。電路板150為印刷電路板(PCB)或者撓性印刷電路板(FPCB)。 The circuit board 150 is bonded to a plurality of flexible films 140 provided. A plurality of circuits implemented to drive the wafer are mounted on the circuit board 150. For example, the timing controller 160 is mounted on the circuit board 150. The circuit board 150 is a printed circuit board (PCB) or a flexible printed circuit board (FPCB).
時序控制器160透過電路板150的電纜從外部系統板(圖未示)接收數位視訊資料與時序訊號。基於時序訊號,時序控制器160產生閘極控制訊號與源極控制訊號。閘極控制訊號用於控制閘極驅動器120之作業時序。源極控制訊號用於控制提供的複數個源極驅動器積體電路130。時序控制器160供應閘極控制訊號至閘極驅動器120,以及供應源極控制訊號至複數個源極驅動器積體電路130。The timing controller 160 receives digital video data and timing signals from an external system board (not shown) through a cable of the circuit board 150. Based on the timing signal, the timing controller 160 generates a gate control signal and a source control signal. The gate control signal is used to control the operation timing of the gate driver 120. The source control signal is used to control the plurality of source driver integrated circuits 130 provided. The timing controller 160 supplies the gate control signal to the gate driver 120 and supplies the source control signal to the plurality of source driver integrated circuits 130.
圖4係為一個實施例之顯示區域中畫素之例子之詳細平面示意圖。圖5係為一個實施例之沿圖4之線I-I'之例子之剖面示意圖。Fig. 4 is a detailed plan view showing an example of a pixel in a display area of an embodiment. Figure 5 is a cross-sectional view showing an example of a line I-I' of Figure 4 in an embodiment.
請參考圖4與圖5,緩衝層210形成於面對第二基板112之第一基板111的一個表面上。緩衝層210形成於第一基板111的一個表面上,用於保護複數個薄膜電晶體220與複數個有機發光裝置280避免水分滲透通過容易滲透水分的第一基板111。緩衝層210包含交替堆疊的複數個無機層。例如,緩衝層210由氧化矽(silicon oxide;SiOx)、氮化矽(silicon nitride;SiNx)與氮氧化矽(SiON)之一或多個交替堆疊的多個層形成。可省略緩衝層210。Referring to FIG. 4 and FIG. 5, the buffer layer 210 is formed on one surface of the first substrate 111 facing the second substrate 112. The buffer layer 210 is formed on one surface of the first substrate 111 for protecting the plurality of thin film transistors 220 and the plurality of organic light-emitting devices 280 from moisture permeation through the first substrate 111 which is easily permeable to moisture. The buffer layer 210 includes a plurality of inorganic layers that are alternately stacked. For example, the buffer layer 210 is formed of a plurality of layers in which one or more of silicon oxide (SiOx), silicon nitride (SiNx), and bismuth oxynitride (SiON) are alternately stacked. The buffer layer 210 can be omitted.
薄膜電晶體220形成於緩衝層210上。每一薄膜電晶體220包含主動層221、閘極222、源極223與汲極224。圖5中,圖中代表性地表示薄膜電晶體220形成為頂部閘極型,其中閘極222形成於主動層221上,但是並非限制於此。就是說,薄膜電晶體220可形成為閘極222被放置於主動層221下方的底部閘極型或閘極222被放置於主動層221上方與下方的雙閘極型。The thin film transistor 220 is formed on the buffer layer 210. Each of the thin film transistors 220 includes an active layer 221, a gate 222, a source 223, and a drain 224. In FIG. 5, the figure schematically shows that the thin film transistor 220 is formed in a top gate type in which the gate electrode 222 is formed on the active layer 221, but is not limited thereto. That is, the thin film transistor 220 may be formed as a double gate type in which the gate 222 is placed under the active layer 221 or the gate 222 is placed above and below the active layer 221.
主動層221形成於緩衝層210上。主動層221由矽基半導體材料或者基於氧化物的半導體材料形成。阻光層形成緩衝層210與主動層221之間,用於阻擋外部光線入射到主動層221上。The active layer 221 is formed on the buffer layer 210. The active layer 221 is formed of a germanium-based semiconductor material or an oxide-based semiconductor material. The light blocking layer forms a buffer layer 210 and the active layer 221 for blocking external light from entering the active layer 221.
閘極絕緣層230形成於主動層221上。閘極絕緣層230由無機層例如氧化矽(SiOx)、氮化矽(SiNx)或者其多層形成。A gate insulating layer 230 is formed on the active layer 221. The gate insulating layer 230 is formed of an inorganic layer such as yttrium oxide (SiOx), tantalum nitride (SiNx), or a plurality of layers thereof.
閘極222與閘極線係形成於閘極絕緣層230上。閘極222與閘極線各自由單層或多層形成,其中單層或多層包含鉬(Mo)、鉻(Cr)、鈦(Ti)、鎳(Ni)、釹(Nd)與銅(Cu)中的一種或者其合金。The gate 222 and the gate line are formed on the gate insulating layer 230. The gate 222 and the gate line are each formed of a single layer or a plurality of layers, wherein the single layer or layers include molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), niobium (Nd), and copper (Cu). One of them or an alloy thereof.
層間絕緣層240由閘極222與閘極線形成。層間絕緣層240由無機層例如氧化矽(SiOx)、氮化矽(SiNx)或者其多層形成。The interlayer insulating layer 240 is formed of a gate 222 and a gate line. The interlayer insulating layer 240 is formed of an inorganic layer such as yttrium oxide (SiOx), tantalum nitride (SiNx), or a plurality of layers thereof.
源極223、汲極224與資料線形成於層間絕緣層240上。源極223與汲極224的每一個透過接觸孔C1接觸主動層221,其中接觸孔C1穿透閘極絕緣層230與層間絕緣層240。源極223、汲極224與資料線各自由單層或多層形成,其中單層或多層包含鉬(Mo)、鉻(Cr)、鈦(Ti)、鎳(Ni)、釹(Nd)與銅(Cu)中的一種或者其合金。 The source 223, the drain 224, and the data line are formed on the interlayer insulating layer 240. Each of the source 223 and the drain 224 contacts the active layer 221 through the contact hole C1, wherein the contact hole C1 penetrates the gate insulating layer 230 and the interlayer insulating layer 240. The source electrode 223, the drain electrode 224 and the data line are each formed of a single layer or a plurality of layers, wherein the single layer or layers comprise molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), niobium (Nd) and copper. One of (Cu) or an alloy thereof.
用於絕緣薄膜電晶體220的鈍化層250形成於源極223、汲極224與資料線上。鈍化層250由無機層例如氧化矽(SiOx)、氮化矽(SiNx)或者其多層形成。 A passivation layer 250 for insulating thin film transistor 220 is formed on source 223, drain 224, and data lines. The passivation layer 250 is formed of an inorganic layer such as yttrium oxide (SiOx), tantalum nitride (SiNx), or a plurality of layers thereof.
第一平坦化層260形成於鈍化層250上,用於平坦化薄膜電晶體220導致的階梯高度。第一平坦化層260由有機層比如丙烯酸樹脂(acryl resin)、環氧樹脂、酚樹脂(phenolic resin)、聚醯胺樹脂(polyamide resin)、聚醯亞胺樹脂(polyimide resin)與/或同類形成。 A first planarization layer 260 is formed over the passivation layer 250 for planarizing the step height caused by the thin film transistor 220. The first planarization layer 260 is composed of an organic layer such as an acryl resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, and/or the like. form.
接觸孔CNT穿透鈍化層250與第一平坦化層260且暴露薄膜電晶體220的汲極224的一部分,接觸孔CNT形成於鈍化層250與第一平坦化層260中。如圖4所示,形成接觸孔CNT以與發射區域EA重疊。圖4中,接觸孔CNT的一部分如圖所示與發射區域EA重疊,但是並非限制於此。其他實施例中,接觸孔CNT的整個部分可與發射區域EA重疊。 The contact hole CNT penetrates the passivation layer 250 and the first planarization layer 260 and exposes a portion of the drain 224 of the thin film transistor 220 formed in the passivation layer 250 and the first planarization layer 260. As shown in FIG. 4, a contact hole CNT is formed to overlap the emission area EA. In FIG. 4, a part of the contact hole CNT overlaps with the emission area EA as shown, but is not limited thereto. In other embodiments, the entire portion of the contact hole CNT may overlap the emission area EA.
輔助電極281a形成於第一平坦化層260上。輔助電極281a透過接觸孔CNT連接薄膜電晶體220的汲極224。圖5中,輔助電極281a如圖所示接觸薄膜電晶體220之汲極224,但是可連接薄膜電晶體220之源極223。另外,如圖5所示,輔助電極281a部分地填充接觸孔CNT之一部分。此外,如圖5所示,輔助電極281a直接連接發光裝置280之電極與薄膜電晶體220之電極。 The auxiliary electrode 281a is formed on the first planarization layer 260. The auxiliary electrode 281a is connected to the drain 224 of the thin film transistor 220 through the contact hole CNT. In FIG. 5, the auxiliary electrode 281a contacts the drain 224 of the thin film transistor 220 as shown, but may be connected to the source 223 of the thin film transistor 220. In addition, as shown in FIG. 5, the auxiliary electrode 281a partially fills a portion of the contact hole CNT. Further, as shown in FIG. 5, the auxiliary electrode 281a is directly connected to the electrode of the light-emitting device 280 and the electrode of the thin film transistor 220.
第二平坦化層270形成於輔助電極281a上。第二平坦化層270被填充於接觸孔CNT的剩餘部分內,用於將接觸孔CNT造成的階梯高度平坦化。第二平坦化層270由有機層比如丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂與/或同類形成。 The second planarization layer 270 is formed on the auxiliary electrode 281a. The second planarization layer 270 is filled in the remaining portion of the contact hole CNT for flattening the step height caused by the contact hole CNT. The second planarization layer 270 is formed of an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like.
第二平坦化層270形成以覆蓋接觸孔CNT,用於填充接觸孔CNT的階梯高度。因此,如圖4所示,第二平坦化層270形成為比接觸孔CNT寬。然而,本揭露實施例並非限制於此。其他實施例中,第二平坦化層270形成為等於或窄於接觸孔CNT。一個實施例中,接觸孔CNT的寬度比發射區域EA寬。或者,接觸孔CNT的寬度少於發射區域EA的寬度。一個實施例中,接觸孔CNT與發射區域EA具有變化的重疊範圍。例如,接觸孔CNT的10%-95%與發射區域EA重疊。The second planarization layer 270 is formed to cover the contact holes CNT for filling the step height of the contact holes CNT. Therefore, as shown in FIG. 4, the second planarization layer 270 is formed to be wider than the contact hole CNT. However, the disclosed embodiments are not limited thereto. In other embodiments, the second planarization layer 270 is formed to be equal to or narrower than the contact hole CNT. In one embodiment, the width of the contact hole CNT is wider than the emission area EA. Alternatively, the width of the contact hole CNT is smaller than the width of the emission area EA. In one embodiment, the contact holes CNT and the emission area EA have varying overlapping ranges. For example, 10% to 95% of the contact holes CNT overlap with the emission area EA.
另外,如圖4所示,第二平坦化層270形成為比發射區域EA寬。這種情況下,第一電極281b、有機發光層282與第二電極283形成於發射區域EA中的第二平坦化層270上,由此有機發光層282在發射區域EA中形成為均勻厚度,由此發射區域EA輸出均勻的光線。In addition, as shown in FIG. 4, the second planarization layer 270 is formed to be wider than the emission area EA. In this case, the first electrode 281b, the organic light-emitting layer 282, and the second electrode 283 are formed on the second planarization layer 270 in the emission region EA, whereby the organic light-emitting layer 282 is formed to have a uniform thickness in the emission region EA. The emission area EA thus outputs uniform light.
由於第二平坦化層270的製造製程的特徵的緣故,第二平坦化層270的厚度t2被調整為比第一平坦化層260的厚度t1厚。因此,第二平坦化層270的一部分(例如,中央部分)的厚度比第一平坦化層260的厚度厚。將結合圖8A與圖8B詳細描述第二平坦化層270的厚度t2被調整為比第一平坦化層260的厚度t1厚的原因。Due to the characteristics of the manufacturing process of the second planarization layer 270, the thickness t2 of the second planarization layer 270 is adjusted to be thicker than the thickness t1 of the first planarization layer 260. Therefore, a portion (eg, a central portion) of the second planarization layer 270 has a thickness thicker than that of the first planarization layer 260. The reason why the thickness t2 of the second planarization layer 270 is adjusted to be thicker than the thickness t1 of the first planarization layer 260 will be described in detail with reference to FIGS. 8A and 8B.
有機發光裝置280形成於第二平坦化層270上。有機發光裝置280包含第一電極281b、有機發光層282與第二電極283。第一電極281b、有機發光層282與第二電極283堆疊的區域被定義為發射區域EA。第一電極281b為陽極,以及第二電極283為陰極。The organic light emitting device 280 is formed on the second planarization layer 270. The organic light-emitting device 280 includes a first electrode 281b, an organic light-emitting layer 282, and a second electrode 283. A region in which the first electrode 281b, the organic light-emitting layer 282, and the second electrode 283 are stacked is defined as an emission region EA. The first electrode 281b is an anode, and the second electrode 283 is a cathode.
第一電極281b形成於第二平坦化層270上。如圖4所示,第一電極281b形成為比輔助電極281a寬,由此未被第二平坦化層270覆蓋的輔助電極281a可連接第一電極281b。圖4中,圖中表示第一電極281b與輔助電極281a在接觸孔CNT兩側外部彼此接觸,但是本實施例並非限制於此。其他實施例中,第一電極281b與輔助電極281a可在接觸孔CNT至少一側的外部彼此連接。The first electrode 281b is formed on the second planarization layer 270. As shown in FIG. 4, the first electrode 281b is formed to be wider than the auxiliary electrode 281a, whereby the auxiliary electrode 281a not covered by the second planarization layer 270 can be connected to the first electrode 281b. In Fig. 4, the first electrode 281b and the auxiliary electrode 281a are shown in contact with each other on both sides of the contact hole CNT, but the embodiment is not limited thereto. In other embodiments, the first electrode 281b and the auxiliary electrode 281a may be connected to each other outside at least one side of the contact hole CNT.
輔助電極281a與第一電極281b由相同的材料形成。或者,輔助電極281a與第一電極281b的每一個由一個金屬層或者兩個或多個金屬層形成。The auxiliary electrode 281a and the first electrode 281b are formed of the same material. Alternatively, each of the auxiliary electrode 281a and the first electrode 281b is formed of one metal layer or two or more metal layers.
輔助電極281a與第一電極281b的每一個由透明的導電材料或不透明的導電材料形成。透明的導電材料為比如氧化銦錫(indium tin oxide;ITO)或氧化銦鋅(indium zinc oxide;IZO)之透明導電材料(或透明的導電氧化物(transparent conductive oxide;TCO)),或者為半透射導電材料比如鎂(Mg)、銀(Ag)或者鎂與銀的合金。不透明的導電材料為鋁、銀、鉬、鉬與鈦的堆疊結構(Mo/Ti)、銅、鋁與鈦的堆疊結構、鋁與氧化銦錫之堆疊結構(ITO/Al/ITO),或者銀、鈀與銅(APC)合金與氧化銦錫之堆疊結構(ITO/APC/ITO)。APC合金為銀、鈀(Pd)與銅的合金。Each of the auxiliary electrode 281a and the first electrode 281b is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material is a transparent conductive material (or transparent conductive oxide (TCO)) such as indium tin oxide (ITO) or indium zinc oxide (IZO), or half A conductive material such as magnesium (Mg), silver (Ag) or an alloy of magnesium and silver is transmitted. The opaque conductive material is a stack of aluminum, silver, molybdenum, molybdenum and titanium (Mo/Ti), a stack of copper, aluminum and titanium, a stack of aluminum and indium tin oxide (ITO/Al/ITO), or silver. , a stack structure of palladium and copper (APC) alloy and indium tin oxide (ITO/APC/ITO). The APC alloy is an alloy of silver, palladium (Pd) and copper.
舉個例子,第一電極281b形成為兩層或更多層的堆疊結構,包含具有像鋁或銀的高反射率的導電材料與透明導電材料,以及輔助電極281a由像鉬、鉬與鈦的堆疊結構(Mo/Ti)、銅或者鋁與鈦的堆疊結構(Ti/Al/Ti)的低電阻材料形成。此外,為了最大化地加寬反射區域,第一電極281b由透明導電材料形成,以及輔助電極281a可由如鋁或銀一樣的高反射率的導電材料形成。For example, the first electrode 281b is formed as a stacked structure of two or more layers including a conductive material having a high reflectance like aluminum or silver and a transparent conductive material, and the auxiliary electrode 281a is made of molybdenum, molybdenum, and titanium. A low-resistance material of a stacked structure (Mo/Ti), copper or a stacked structure of aluminum and titanium (Ti/Al/Ti) is formed. Further, in order to maximize the widening of the reflective area, the first electrode 281b is formed of a transparent conductive material, and the auxiliary electrode 281a may be formed of a highly reflective conductive material such as aluminum or silver.
護堤284形成於第一平坦化層260上以覆蓋第一電極281b的邊緣,用於定義發射區域EA。形成護堤284的區域無法發射光線,由此定義為非發射區域。例如,第一護堤(例如,左側護堤)形成於輔助電極281a的第一重疊部(例如,左端)、第二平坦化層270以及發光裝置之第一電極281b上方。另外,第二護堤(例如,右側護堤)形成於輔助電極281a之第二重疊部分(例如,右端)、第二平坦化層270與發光裝置之第一電極281b上方。未被第一護堤與第二護堤覆蓋的輔助電極281a的部分定義發射區域EA的寬度。就是說,護堤284定義發射區域EA。護堤284的第三厚度t3被調整為比第一平坦化層260與有機發光層282間的距離t4厚。此外,圖5所示之實施例中,護堤284的厚度均勻。A berm 284 is formed on the first planarization layer 260 to cover the edge of the first electrode 281b for defining the emission area EA. The area forming the berm 284 is unable to emit light, and thus is defined as a non-emission area. For example, a first berm (for example, a left berm) is formed over the first overlapping portion (eg, the left end) of the auxiliary electrode 281a, the second planarizing layer 270, and the first electrode 281b of the light emitting device. Further, a second berm (for example, a right berm) is formed on the second overlapping portion (for example, the right end) of the auxiliary electrode 281a, the second planarizing layer 270, and the first electrode 281b of the light-emitting device. The portion of the auxiliary electrode 281a that is not covered by the first berm and the second berm defines the width of the emission area EA. That is, the berm 284 defines the launch area EA. The third thickness t3 of the berm 284 is adjusted to be thicker than the distance t4 between the first planarization layer 260 and the organic light-emitting layer 282. Further, in the embodiment shown in FIG. 5, the thickness of the berm 284 is uniform.
可凸起地形成第二平坦化層270。因為第二平坦化層270為圖5所示之凸起形狀,所以第二平坦化層270具有不均勻的厚度。此外,有機發光層282可透過例如蒸發沈積製程之製程而形成,蒸發沈積製程在階梯覆蓋特性方面不好,由此薄薄地形成在第二平坦化層270之傾斜部分中。因此,第一電極281b或者有機發光層282的電荷產生層與第二電極283可在第二平坦化層270之傾斜部中短路。階梯覆蓋部表示由特定沈積製程沈積的層,在形成階梯高度的部分中連接而未斷開連接。然而,本揭露之實施例中,因為形成護堤284以覆蓋第二平坦化層270之傾斜部,第一電極281b或者有機發光層282的電荷產生層與第二電極283避免在第二平坦化層270的傾斜部中短路。The second planarization layer 270 may be convexly formed. Since the second planarizing layer 270 has a convex shape as shown in FIG. 5, the second planarizing layer 270 has a non-uniform thickness. Further, the organic light-emitting layer 282 can be formed by a process such as an evaporation deposition process which is not good in step coverage characteristics, thereby being thinly formed in the inclined portion of the second planarization layer 270. Therefore, the charge generating layer and the second electrode 283 of the first electrode 281b or the organic light emitting layer 282 may be short-circuited in the inclined portion of the second planarizing layer 270. The step cover represents a layer deposited by a specific deposition process, connected in a portion forming a step height without being disconnected. However, in the embodiment of the present disclosure, since the berm 284 is formed to cover the inclined portion of the second planarization layer 270, the charge generation layer of the first electrode 281b or the organic light-emitting layer 282 and the second electrode 283 are prevented from being in the second planarization. The inclined portion of the layer 270 is short-circuited.
有機發光層282形成於第一電極281b與護堤284上。有機發光層282包含電洞傳輸層、發光層與電子傳輸層。這種情況下,當電壓被施加至第一電極281b與第二電極283時,電洞與電子分別透過電洞傳輸層與電子傳輸層向發光層移動,以及在發光層中彼此結合以發射光線。The organic light-emitting layer 282 is formed on the first electrode 281b and the berm 284. The organic light-emitting layer 282 includes a hole transport layer, a light-emitting layer, and an electron transport layer. In this case, when a voltage is applied to the first electrode 281b and the second electrode 283, the holes and the electrons respectively move through the hole transport layer and the electron transport layer toward the light emitting layer, and are combined with each other to emit light in the light emitting layer. .
有機發光層282為發射白光的白色發光層。這種情況下,如圖5所示,形成有機發光層282以覆蓋第一電極281b與護堤284。此外,這種情況下,形成複數個彩色濾光片321至323以覆蓋發射區域EA。The organic light-emitting layer 282 is a white light-emitting layer that emits white light. In this case, as shown in FIG. 5, the organic light-emitting layer 282 is formed to cover the first electrode 281b and the berm 284. Further, in this case, a plurality of color filters 321 to 323 are formed to cover the emission area EA.
或者,有機發光層282包含發射紅光的紅色發光層、發射綠光的綠色發光層與發光藍光的藍色發光層。這種情況下,發射區域EA被劃分為發射紅光的紅色發射區域、發射綠光的綠色發射區域與發射藍光的藍色發射區域,以及紅色發射區域、綠色發射區域與藍色發射區域的每一個不包含彩色濾光片。紅色發光層形成於紅色發射區域中第一電極281b上,綠色發光層形成於綠色發射區域中第一電極281b上,以及藍色發光層形成於藍色發射區域中第一電極281b上。Alternatively, the organic light-emitting layer 282 includes a red light-emitting layer that emits red light, a green light-emitting layer that emits green light, and a blue light-emitting layer that emits blue light. In this case, the emission area EA is divided into a red emission area that emits red light, a green emission area that emits green light, and a blue emission area that emits blue light, and each of the red emission area, the green emission area, and the blue emission area. One does not contain color filters. The red light-emitting layer is formed on the first electrode 281b in the red emission region, the green light-emitting layer is formed on the first electrode 281b in the green emission region, and the blue light-emitting layer is formed on the first electrode 281b in the blue emission region.
第二電極283形成於有機發光層282上。第二電極283由透明導電材料(或透明的導電氧化物)比如能夠透射光線的氧化銦錫(ITO)或氧化銦鋅(IZO)、或者半透射導電材料比如鎂、銀或者鎂與銀的合金形成。覆蓋層(capping layer)形成於第二電極283上。The second electrode 283 is formed on the organic light emitting layer 282. The second electrode 283 is made of a transparent conductive material (or a transparent conductive oxide) such as indium tin oxide (ITO) or indium zinc oxide (IZO) capable of transmitting light, or a semi-transmissive conductive material such as magnesium, silver or an alloy of magnesium and silver. form. A capping layer is formed on the second electrode 283.
封裝層290形成於第二電極283上。封裝層290避免氧氣或水滲透進入有機發光層282與第二電極283內。為此,封裝層290包含至少一個無機層與至少一個有機層。圖5中,圖中表示封裝層290包含第一無機層291、有機層292與第二無機層293,但是並非限制於此。The encapsulation layer 290 is formed on the second electrode 283. The encapsulation layer 290 prevents oxygen or water from penetrating into the organic light-emitting layer 282 and the second electrode 283. To this end, the encapsulation layer 290 comprises at least one inorganic layer and at least one organic layer. In FIG. 5, the encapsulation layer 290 is shown to include the first inorganic layer 291, the organic layer 292, and the second inorganic layer 293, but is not limited thereto.
第一無機層291形成於第二電極283上以覆蓋第二電極283。有機層292形成於第一無機層291上以覆蓋第一無機層291。有機層292形成足夠的厚度,用於避免顆粒經由第一無機層291滲透進入有機發光層282與第二電極283內。第二無機層293形成於有機層292上以覆蓋有機層292。The first inorganic layer 291 is formed on the second electrode 283 to cover the second electrode 283. The organic layer 292 is formed on the first inorganic layer 291 to cover the first inorganic layer 291. The organic layer 292 is formed to a sufficient thickness for preventing particles from penetrating into the organic light-emitting layer 282 and the second electrode 283 via the first inorganic layer 291. The second inorganic layer 293 is formed on the organic layer 292 to cover the organic layer 292.
第一無機層291與第二無機層293的每一個由氮化矽、氮化鋁(aluminum nitride)、氮化鋯(zirconium nitride)、氮化鈦(titanium nitride)、氮化鉿(hafnium nitride)、氮化鉭(tantalum nitride)、氧化矽、氧化鋁、氧化鈦與/或諸如此類形成。有機層292由丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂與/或同類形成。Each of the first inorganic layer 291 and the second inorganic layer 293 is made of tantalum nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride. , tantalum nitride, cerium oxide, aluminum oxide, titanium oxide, and/or the like. The organic layer 292 is formed of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like.
彩色濾光片321至323與黑色矩陣310形成於面對第一基板111之第二基板112上。紅色濾光片323形成於紅色發射區域中,藍色濾光片322形成於藍色發射區域中,以及綠色濾光片321形成於綠色發射區域中。黑色矩陣(black matrix;BM)310被放置於彩色濾光片321至323之間。如果有機發光層282包含發射紅光的紅色發光層、發射綠光的綠色發光層以及發射藍光的藍色發光層,則可省略彩色濾光片321至323與黑色矩陣310。The color filters 321 to 323 and the black matrix 310 are formed on the second substrate 112 facing the first substrate 111. A red color filter 323 is formed in the red emission region, a blue color filter 322 is formed in the blue emission region, and a green color filter 321 is formed in the green emission region. A black matrix (BM) 310 is placed between the color filters 321 to 323. If the organic light-emitting layer 282 includes a red light-emitting layer that emits red light, a green light-emitting layer that emits green light, and a blue light-emitting layer that emits blue light, the color filters 321 to 323 and the black matrix 310 may be omitted.
第一基板111之封裝層290以及第二基板112之彩色濾光片321至323透過黏合層330彼此黏合,由此,第一基板111與第二基板112彼此接合。黏合層330為透明黏合樹脂。The encapsulation layer 290 of the first substrate 111 and the color filters 321 to 323 of the second substrate 112 are bonded to each other through the adhesive layer 330, whereby the first substrate 111 and the second substrate 112 are bonded to each other. The adhesive layer 330 is a transparent adhesive resin.
如上所述,本揭露之實施例中,形成接觸孔CNT以與發射區域EA重疊,以及第二平坦化層270被填充至接觸孔CNT內,用於平坦化接觸孔CNT的階梯高度。因此,本揭露之實施例中,有機發光層形成於第二平坦化層270上以具有均勻的厚度,由此,甚至當形成接觸孔CNT以重疊發射區域EA時,發射區域EA也均勻地輸出光線。As described above, in the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, and the second planarization layer 270 is filled into the contact hole CNT for planarizing the step height of the contact hole CNT. Therefore, in the embodiment of the present disclosure, the organic light-emitting layer is formed on the second planarization layer 270 to have a uniform thickness, whereby the emission region EA is evenly output even when the contact hole CNT is formed to overlap the emission region EA. Light.
此外,因為有機發光裝置隨著時間的推移而劣化,所以延長有機發光顯示裝置中的有機發光裝置的壽命非常重要。如果有機發光層發射光線的發射區域面積被擴大,有機發光裝置的壽命則延長。本揭露之實施例中,形成接觸孔CNT以重疊發射區域EA,由此,發射區域EA的面積不取決於接觸孔CNT的面積。結果,本揭露之實施例中,發射區域EA的面積被設計為與接觸孔CNT的面積無關,由此,發射區域EA的面積被最大化,從而提高有機發光層的壽命。Further, since the organic light-emitting device deteriorates over time, it is important to extend the life of the organic light-emitting device in the organic light-emitting display device. If the area of the emission area where the organic light-emitting layer emits light is enlarged, the life of the organic light-emitting device is prolonged. In the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, whereby the area of the emission region EA does not depend on the area of the contact hole CNT. As a result, in the embodiment of the present disclosure, the area of the emission area EA is designed to be independent of the area of the contact hole CNT, whereby the area of the emission area EA is maximized, thereby increasing the life of the organic light-emitting layer.
另外,本揭露之實施例中,因為發射區域EA的面積被最大化,則非發射區域的面積被最小化。因此,如果本揭露之實施例被應用至頭戴式顯示器,則避免在格子圖案中看到非發射區域。In addition, in the embodiment of the present disclosure, since the area of the emission area EA is maximized, the area of the non-emission area is minimized. Therefore, if the embodiment of the present disclosure is applied to a head mounted display, it is avoided to see a non-emission area in the lattice pattern.
圖6係為本揭露實施例之有機發光顯示裝置之製造方法之流程圖。圖7A至7G係為沿線I-I'之剖面示意圖,用於描述本揭露實施例之有機發光顯示裝置之製造方法。6 is a flow chart of a method of fabricating an organic light emitting display device according to an embodiment of the present disclosure. 7A to 7G are schematic cross-sectional views along line II' for describing a method of fabricating the organic light-emitting display device of the disclosed embodiment.
圖7A至7G所示的剖面示意圖係關於圖5所示有機發光顯示裝置之製造方法,由此同樣的參考標號表示同樣的元件。以下,將結合圖6以及圖7A至7G詳細描述本揭露實施例之有機發光顯示裝置之製造方法。7A to 7G are views showing a method of manufacturing the organic light-emitting display device shown in Fig. 5, and thus the same reference numerals denote the same elements. Hereinafter, a method of manufacturing the organic light-emitting display device of the embodiment of the present disclosure will be described in detail with reference to FIG. 6 and FIGS. 7A to 7G.
首先,如圖7A所示,薄膜電晶體220、鈍化層250與第一平坦化層260形成於第一基板111上。First, as shown in FIG. 7A, a thin film transistor 220, a passivation layer 250, and a first planarization layer 260 are formed on the first substrate 111.
在形成薄膜電晶體220以前,緩衝層210形成於第一基板111上,用於保護薄膜電晶體220與有機發光裝置280避免水分滲透通過第一基板111。緩衝層210由交替堆疊的複數個無機層形成,用於保護薄膜電晶體220與有機發光裝置280避免水分滲透通過容易被水分滲透的第一基板111。舉個例子,緩衝層210由氧化矽、氮化矽與氮氧化矽之一或多個交替堆疊的多層形成。緩衝層210係透過化學氣相沈積(chemical vapor deposition;CVD)製程形成。Before the thin film transistor 220 is formed, the buffer layer 210 is formed on the first substrate 111 for protecting the thin film transistor 220 and the organic light emitting device 280 from moisture permeation through the first substrate 111. The buffer layer 210 is formed of a plurality of inorganic layers alternately stacked for protecting the thin film transistor 220 and the organic light-emitting device 280 from moisture permeation through the first substrate 111 which is easily penetrated by moisture. For example, the buffer layer 210 is formed of a plurality of layers of one or more of tantalum oxide, tantalum nitride, and hafnium oxynitride. The buffer layer 210 is formed by a chemical vapor deposition (CVD) process.
接下來,薄膜電晶體220中包含的主動層221形成於緩衝層210上。詳細地,利用濺射(sputtering)製程、金屬有機化學氣相沈積(metal organic chemical vapor deposition;MOCVD)製程與/或諸如此類,主動金屬層形成於整個緩衝層210上方。接下來,透過遮罩製程利用光阻圖案,透過將主動金屬層圖案化而形成主動層221。主動層221由矽基半導體材料或基於氧化物的半導體材料形成。 Next, the active layer 221 included in the thin film transistor 220 is formed on the buffer layer 210. In detail, an active metal layer is formed over the entire buffer layer 210 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the active layer 221 is formed by patterning the active metal layer by a mask process using a photoresist pattern. The active layer 221 is formed of a germanium-based semiconductor material or an oxide-based semiconductor material.
接下來,閘極絕緣層230形成於主動層221上。閘極絕緣層230由無機層比如氧化矽、氮化矽或者其多層形成。閘極絕緣層230由化學氣相沈積(CVD)製程形成。 Next, a gate insulating layer 230 is formed on the active layer 221. The gate insulating layer 230 is formed of an inorganic layer such as hafnium oxide, tantalum nitride or a plurality of layers thereof. The gate insulating layer 230 is formed by a chemical vapor deposition (CVD) process.
接下來,薄膜電晶體220中包含的閘極222與閘極線形成於閘極絕緣層230上。詳細地,利用濺射製程、金屬有機化學氣相沈積(MOCVD)製程與/或諸如此類,第一金屬層形成於整個閘極絕緣層230上方。接下來,透過遮罩製程利用光阻圖案,透過將第一金屬層圖案化而形成閘極222與閘極線。閘極222與閘極線各自由單層或者多層形成,其中單層或者多層包含鉬(Mo)、鉻(Cr)、鈦(Ti)、鎳(Ni)、釹(Nd)與銅(Cu)其中之一或者其合金。 Next, the gate electrode 222 and the gate line included in the thin film transistor 220 are formed on the gate insulating layer 230. In detail, a first metal layer is formed over the entire gate insulating layer 230 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the gate electrode 222 and the gate line are formed by patterning the first metal layer by a mask process using a photoresist pattern. The gate 222 and the gate line are each formed of a single layer or a plurality of layers, wherein the single layer or the plurality of layers comprise molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), niobium (Nd) and copper (Cu). One of them or its alloy.
接下來,層間絕緣層240形成於閘極222上。層間絕緣層240由無機層例如氧化矽、氮化矽或其多層形成。層間絕緣層240係透過化學氣相沈積(CVD)製程形成。 Next, an interlayer insulating layer 240 is formed on the gate 222. The interlayer insulating layer 240 is formed of an inorganic layer such as hafnium oxide, tantalum nitride or a plurality of layers thereof. The interlayer insulating layer 240 is formed by a chemical vapor deposition (CVD) process.
接下來,形成接觸孔C1,接觸孔C1穿透閘極絕緣層230與層間絕緣層240且暴露主動層221。 Next, a contact hole C1 is formed which penetrates the gate insulating layer 230 and the interlayer insulating layer 240 and exposes the active layer 221.
接下來,薄膜電晶體220中包含的源極223與汲極224以及資料線可形成於層間絕緣層240上。詳細地,利用濺射製程、金屬有機化學氣相沈積(MOCVD)製程與/或諸如此類,第二金屬層形成於整個層間絕緣層240上方。接下來,透過遮罩製程利用光阻圖案,透過將第二金屬層圖案化而形成源極223、汲極224與資料線。透過穿透閘極絕緣層230與層間絕緣層240且暴露主動層221的接觸孔C1,源極223、汲極224與資料線接觸主動層221。源極223、汲極224與資料線各自由單層或者多層形成,其中單層或者多層包含鉬(Mo)、鉻(Cr)、鈦(Ti)、鎳(Ni)、釹(Nd)與銅(Cu)其中之一或者其合金。 Next, the source electrode 223 and the drain electrode 224 and the data line included in the thin film transistor 220 may be formed on the interlayer insulating layer 240. In detail, a second metal layer is formed over the entire interlayer insulating layer 240 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the source pattern 223, the drain 224, and the data line are formed by patterning the second metal layer by the mask process using the photoresist pattern. The source electrode 223 and the drain 224 are in contact with the active layer 221 through the contact hole C1 penetrating the gate insulating layer 230 and the interlayer insulating layer 240 and exposing the active layer 221. The source electrode 223, the drain electrode 224 and the data line are each formed of a single layer or a plurality of layers, wherein the single layer or the plurality of layers comprise molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), niobium (Nd) and copper. (Cu) one of them or an alloy thereof.
接下來,鈍化層250形成於薄膜電晶體220之源極223與汲極224上。鈍化層250由無機層例如氧化矽、氮化矽或其多層形成。鈍化層250係透過化學氣相沈積(CVD)製程形成。Next, a passivation layer 250 is formed on the source 223 and the drain 224 of the thin film transistor 220. The passivation layer 250 is formed of an inorganic layer such as hafnium oxide, tantalum nitride or a plurality of layers thereof. The passivation layer 250 is formed by a chemical vapor deposition (CVD) process.
接下來,第一平坦化層260形成於鈍化層250上,用於平坦化薄膜電晶體220造成的階梯高度。鈍化層250由無機層比如丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂與/或諸如此類形成(圖6之S101)。Next, a first planarization layer 260 is formed on the passivation layer 250 for planarizing the step height caused by the thin film transistor 220. The passivation layer 250 is formed of an inorganic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and the like (or S101 of FIG. 6).
其次,如圖7B所示,形成接觸孔CNT,接觸孔CNT穿透鈍化層250與第一平坦化層260且暴露薄膜電晶體220之源極223或汲極224(圖6之S102)。Next, as shown in FIG. 7B, a contact hole CNT is formed which penetrates the passivation layer 250 and the first planarization layer 260 and exposes the source 223 or the drain 224 of the thin film transistor 220 (S102 of FIG. 6).
第三,如圖7C所示,輔助電極281a形成於第一平坦化層260上。輔助電極281a透過接觸孔CNT連接薄膜電晶體220之源極223或汲極224。Third, as shown in FIG. 7C, the auxiliary electrode 281a is formed on the first planarization layer 260. The auxiliary electrode 281a is connected to the source 223 or the drain 224 of the thin film transistor 220 through the contact hole CNT.
詳細地,利用濺射製程、金屬有機化學氣相沈積(MOCVD)製程與/或諸如此類,第三金屬層形成於整個第一平坦化層260上方。接下來,透過遮罩製程利用光阻圖案,透過將第三金屬層圖案化,形成輔助電極281a。In detail, a third metal layer is formed over the entire first planarization layer 260 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the photoresist pattern is used through the mask process, and the third metal layer is patterned to form the auxiliary electrode 281a.
輔助電極281a由透明的導電材料或者不透明的導電材料形成。透明的導電材料可為比如氧化銦錫(ITO)或氧化銦鋅(IZO)之透明導電材料(或透明的導電氧化物),或者為半透射導電材料比如鎂(Mg)、銀(Ag)或者鎂與銀的合金。不透明的導電材料可為鋁、銀、鉬、鉬與鈦的堆疊結構(Mo/Ti)、銅、鋁與鈦的堆疊結構、鋁與氧化銦錫之堆疊結構(ITO/Al/ITO)、APC合金,或者APC合金與氧化銦錫之堆疊結構(ITO/APC/ITO)。APC合金為銀、鈀(Pd)與銅的合金。(圖6之S103)The auxiliary electrode 281a is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material may be a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) (or a transparent conductive oxide), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or An alloy of magnesium and silver. The opaque conductive material may be aluminum, silver, molybdenum, a stacked structure of molybdenum and titanium (Mo/Ti), a stacked structure of copper, aluminum and titanium, a stacked structure of aluminum and indium tin oxide (ITO/Al/ITO), APC. Alloy, or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy is an alloy of silver, palladium (Pd) and copper. (S103 of Figure 6)
第四,如圖7D所示,第二平坦化層270形成於輔助電極281a上。第二平坦化層270被填充至接觸孔CNT內,用於平坦化接觸孔CNT造成的階梯高度。Fourth, as shown in FIG. 7D, the second planarization layer 270 is formed on the auxiliary electrode 281a. The second planarization layer 270 is filled into the contact hole CNT for planarizing the step height caused by the contact hole CNT.
詳細地,如圖8A所示,有機材料270'被塗佈於第一平坦化層260與輔助電極281a上。有機材料270'可為丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂或同類物。利用狹縫噴塗(slit coating)製程、旋轉噴塗(spin coating)製程、蒸發製程與/或諸如此類,有機材料270'形成於第一平坦化層260與輔助電極281a上。有機材料270'被填充至接觸孔CNT內。In detail, as shown in FIG. 8A, an organic material 270' is coated on the first planarization layer 260 and the auxiliary electrode 281a. The organic material 270' may be an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like. The organic material 270' is formed on the first planarization layer 260 and the auxiliary electrode 281a by a slit coating process, a spin coating process, an evaporation process, and the like. The organic material 270' is filled into the contact hole CNT.
接下來,如圖8B所示,最後,遮罩M被放置於接觸孔CNT上,然後透過光刻製程,在未放置遮罩M的區域中形成有機材料270'上完成顯影製程。結果,形成第二平坦化層270以覆蓋接觸孔CNT。Next, as shown in FIG. 8B, finally, the mask M is placed on the contact hole CNT, and then the photolithography process is performed to complete the development process on the organic material 270' in the region where the mask M is not placed. As a result, the second planarization layer 270 is formed to cover the contact holes CNT.
如上所述,如圖8A與8B所示,透過光刻製程形成第二平坦化層270的情況下,第二平坦化層270被填充至接觸孔CNT內,此外,被形成以覆蓋第一平坦化層260上形成的輔助電極281a的一部分。因此,如圖8A與8B所示,透過光刻製程形成第二平坦化層270的情況下,第二平坦化層270的厚度t2被調整為比第一平坦化層260的厚度t1厚。因此,第二平坦化層270被形成為比接觸孔CNT寬。(圖6之S104)As described above, as shown in FIGS. 8A and 8B, in the case where the second planarization layer 270 is formed by a photolithography process, the second planarization layer 270 is filled into the contact hole CNT, and further, is formed to cover the first flat A portion of the auxiliary electrode 281a formed on the layer 260. Therefore, as shown in FIGS. 8A and 8B, in the case where the second planarization layer 270 is formed by a photolithography process, the thickness t2 of the second planarization layer 270 is adjusted to be thicker than the thickness t1 of the first planarization layer 260. Therefore, the second planarization layer 270 is formed to be wider than the contact hole CNT. (S104 of Figure 6)
第五,如圖7E所示,第一電極281b形成於第二平坦化層270上。第一電極281b連接第一平坦化層260上未被第二平坦化層270覆蓋的輔助電極281a。Fifth, as shown in FIG. 7E, the first electrode 281b is formed on the second planarization layer 270. The first electrode 281b connects the auxiliary electrode 281a on the first planarization layer 260 that is not covered by the second planarization layer 270.
詳細地,利用濺射製程、金屬有機化學氣相沈積(MOCVD)製程與/或諸如此類,第四金屬層形成於整個第一平坦化層260與第二平坦化層270上方。接下來,透過遮罩製程利用光阻圖案,透過將第四金屬層圖案化而形成第一電極281b。In detail, a fourth metal layer is formed over the entire first planarization layer 260 and the second planarization layer 270 by a sputtering process, a metal organic chemical vapor deposition (MOCVD) process, and/or the like. Next, the first electrode 281b is formed by patterning the fourth metal layer by a mask process using a photoresist pattern.
第一電極281b由透明的導電材料或者不透明的導電材料形成。透明的導電材料可為比如氧化銦錫(ITO)或氧化銦鋅(IZO)之透明導電材料(或TCO),或者半透射導電材料比如鎂(Mg)、銀(Ag)或者鎂與銀的合金。不透明的導電材料可為鋁、銀、鉬、鉬與鈦的堆疊結構(Mo/Ti)、銅、鋁與鈦的堆疊結構、鋁與氧化銦錫之堆疊結構(ITO/Al/ITO)、APC合金,或者APC合金與氧化銦錫之堆疊結構(ITO/APC/ITO)。APC合金可為銀、鈀(Pd)與銅的合金。(圖6之S105)The first electrode 281b is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material may be a transparent conductive material (or TCO) such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or an alloy of magnesium and silver. . The opaque conductive material may be aluminum, silver, molybdenum, a stacked structure of molybdenum and titanium (Mo/Ti), a stacked structure of copper, aluminum and titanium, a stacked structure of aluminum and indium tin oxide (ITO/Al/ITO), APC. Alloy, or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy can be an alloy of silver, palladium (Pd) and copper. (S105 of Figure 6)
第六,如圖7F所示,順序地形成護堤284、有機發光層282、第二電極283與封裝層290。Sixth, as shown in FIG. 7F, the berm 284, the organic light-emitting layer 282, the second electrode 283, and the encapsulation layer 290 are sequentially formed.
首先,形成護堤284以覆蓋第一電極281b之邊緣,用於定義發射區域EA。護堤284由有機層比如丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂與/或諸如此類形成。 First, a berm 284 is formed to cover the edge of the first electrode 281b for defining the emission area EA. The berm 284 is formed of an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like.
接下來,有機發光層282形成於第一電極281b與護堤284上。有機發光層282可透過沈積製程或溶解製程(solution process)形成。透過沈積製程形成有機發光層282的情況下,可透過蒸發製程形成有機發光層282。 Next, the organic light-emitting layer 282 is formed on the first electrode 281b and the berm 284. The organic light-emitting layer 282 can be formed through a deposition process or a solution process. In the case where the organic light-emitting layer 282 is formed through a deposition process, the organic light-emitting layer 282 can be formed through an evaporation process.
在複數個發射區域EA中共同形成有機發光層282的情況下,有機發光層282形成為發射白光的白色發光層。如果有機發光層282為白色發光層,則有機發光層282形成為兩個或多個堆疊之串接結構(tandem structure)。每一堆疊包含電洞傳輸層、至少一個發光層與電子傳輸層。此外,電荷產生層係形成於堆疊之間。電荷產生層包含n-型電荷產生層與p-型電荷產生層。n-型電荷產生層被放置為鄰接下部堆疊。p-型電荷產生層形成於n-型電荷產生層上且放置為鄰接上部堆疊。n-型電荷產生層將電子注入下部堆疊內,以及p-型電荷產生層將電洞注入上部堆疊內。n-型電荷產生層由摻雜鹼金屬(alkali metal)或者鹼土金屬(alkali earth metal)的有機層形成。鹼金屬例如為鋰(Li)、鈉(Na)、鉀(K)或銫(Cs),以及鹼土金屬例如為鎂、鍶(Sr)、鋇(Ba)或鐳(Ra)。p-型電荷產生層透過在能夠傳輸電洞的有機材料上摻雜摻雜劑而形成。 In the case where the organic light-emitting layer 282 is collectively formed in the plurality of emission regions EA, the organic light-emitting layer 282 is formed as a white light-emitting layer that emits white light. If the organic light-emitting layer 282 is a white light-emitting layer, the organic light-emitting layer 282 is formed into two or more stacked tandem structures. Each stack includes a hole transport layer, at least one light emitting layer, and an electron transport layer. Further, a charge generating layer is formed between the stacks. The charge generating layer includes an n-type charge generating layer and a p-type charge generating layer. An n-type charge generation layer is placed adjacent to the lower stack. A p-type charge generating layer is formed on the n-type charge generating layer and placed adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generating layer is formed of an organic layer doped with an alkali metal or an alkali earth metal. The alkali metal is, for example, lithium (Li), sodium (Na), potassium (K) or cesium (Cs), and the alkaline earth metal is, for example, magnesium, strontium (Sr), barium (Ba) or radium (Ra). The p-type charge generating layer is formed by doping a dopant on an organic material capable of transporting holes.
接下來,第二電極283形成於有機發光層282上。第二電極283為共同形成於複數個發射區域EA中的共同層。第二電極283由透明導電材料(或TCO)比如能夠透射光線的氧化銦錫(ITO)或氧化銦鋅(IZO)、或者半透射導電材料比如鎂、銀或者鎂與銀的合金形成。覆蓋層形成於第二電極283上。 Next, the second electrode 283 is formed on the organic light-emitting layer 282. The second electrode 283 is a common layer that is commonly formed in the plurality of emission regions EA. The second electrode 283 is formed of a transparent conductive material (or TCO) such as indium tin oxide (ITO) or indium zinc oxide (IZO) capable of transmitting light, or a semi-transmissive conductive material such as magnesium, silver or an alloy of magnesium and silver. A cover layer is formed on the second electrode 283.
接下來,封裝層290形成於第二電極283上。封裝層290避免氧氣或水滲透進入有機發光層282與第二電極283內。為此,封裝層290包含至少一個無機層與至少一個有機層。 Next, an encapsulation layer 290 is formed on the second electrode 283. The encapsulation layer 290 prevents oxygen or water from penetrating into the organic light-emitting layer 282 and the second electrode 283. To this end, the encapsulation layer 290 comprises at least one inorganic layer and at least one organic layer.
舉個例子,封裝層290包含第一無機層291、有機層292與第二無機層293。這種情況下,形成第一無機層291以覆蓋第二電極283。形成有機層292以覆蓋第一無機層291。有機層292被形成足夠的厚度,以避免顆粒經由第一無機層291滲透進入有機發光層282與第二電極283內。形成第二無機層293以覆蓋有機層292。For example, the encapsulation layer 290 includes a first inorganic layer 291, an organic layer 292, and a second inorganic layer 293. In this case, the first inorganic layer 291 is formed to cover the second electrode 283. The organic layer 292 is formed to cover the first inorganic layer 291. The organic layer 292 is formed to a sufficient thickness to prevent particles from penetrating into the organic light-emitting layer 282 and the second electrode 283 via the first inorganic layer 291. A second inorganic layer 293 is formed to cover the organic layer 292.
第一無機層291與第二無機層293之每一個由氮化矽、氮化鋁、氮化鋯、氮化鈦、氮化鉿、氮化鉭、氧化矽、氧化鋁、氧化鈦與/或諸如此類形成。有機層292由丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂與/或諸如此類形成。(圖6之S106)Each of the first inorganic layer 291 and the second inorganic layer 293 is made of tantalum nitride, aluminum nitride, zirconium nitride, titanium nitride, tantalum nitride, tantalum nitride, hafnium oxide, aluminum oxide, titanium oxide, and/or And so on. The organic layer 292 is formed of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like. (S106 of Figure 6)
第七,如圖7G所示,利用黏合層330透過將第一基板111的封裝層290黏合至第二基板112之彩色濾光片321至323,第一基板111被接合至第二基板112。黏合層330為透明黏合樹脂。(圖6之S107)Seventh, as shown in FIG. 7G, the first substrate 111 is bonded to the second substrate 112 by bonding the encapsulation layer 290 of the first substrate 111 to the color filters 321 to 323 of the second substrate 112 by using the adhesive layer 330. The adhesive layer 330 is a transparent adhesive resin. (S107 of Figure 6)
圖9係為沿圖4之線I-I'之另一例子之剖面示意圖。Fig. 9 is a schematic cross-sectional view showing another example taken along line I-I' of Fig. 4.
除了形成第二平坦化層270以覆蓋護堤284與第一電極281b之間的第二平坦化層270造成的階梯高度以外,圖9實質上與以上結合圖5描述的內容相同。因此,圖9中,不再重複護堤284以外的元件的詳細描述。9 is substantially the same as described above in connection with FIG. 5 except that the second planarization layer 270 is formed to cover the step height caused by the second planarization layer 270 between the berm 284 and the first electrode 281b. Therefore, in FIG. 9, a detailed description of components other than the berm 284 is not repeated.
護堤284形成於第一平坦化層260上以覆蓋第一電極281b的邊緣,用於定義發射區域EA。形成護堤284的區域無法發射光線,由此被定義為非發射區域。舉個例子,第一護堤(例如,左側護堤)形成於輔助電極281a的第一重疊部(例如,左端)、第二平坦化層270與發光裝置之第一電極281b上方。另外,第二護堤(例如,右側護堤)形成於輔助電極281a之第二重疊部分(例如,右端)、第二平坦化層270與發光裝置之第一電極281b上方。未被第一護堤與第二護堤覆蓋的輔助電極281a的一部分定義發射區域EA的寬度。就是說,護堤284定義發射區域EA。護堤284的厚度t5被調整為比第二平坦化層270的厚度t6薄。如圖9所示,護堤284的厚度不均勻。另外,如圖9所示,第一重疊部中包含的第二平坦化層270與發光裝置280的第一電極281b以及第二重疊部中包含的第二平坦化層270與發光裝置的第一電極281b依照第一護堤與第二護堤的非均勻厚度所對應的角度傾斜。A berm 284 is formed on the first planarization layer 260 to cover the edge of the first electrode 281b for defining the emission area EA. The area where the berm 284 is formed cannot emit light, and thus is defined as a non-emission area. For example, a first berm (eg, a left berm) is formed over a first overlap (eg, left end) of the auxiliary electrode 281a, a second planarization layer 270, and a first electrode 281b of the illumination device. Further, a second berm (for example, a right berm) is formed on the second overlapping portion (for example, the right end) of the auxiliary electrode 281a, the second planarizing layer 270, and the first electrode 281b of the light-emitting device. A portion of the auxiliary electrode 281a that is not covered by the first berm and the second berm defines the width of the emission area EA. That is, the berm 284 defines the launch area EA. The thickness t5 of the berm 284 is adjusted to be thinner than the thickness t6 of the second planarizing layer 270. As shown in FIG. 9, the thickness of the berm 284 is not uniform. In addition, as shown in FIG. 9, the second planarization layer 270 included in the first overlapping portion and the first electrode 281b of the light-emitting device 280 and the second planarization layer 270 included in the second overlapping portion and the first of the light-emitting device The electrode 281b is inclined at an angle corresponding to the non-uniform thickness of the first berm and the second berm.
可凸起地形成第二平坦化層270。因為第二平坦化層270如圖9所示為凸起形狀,所以第二平坦化層270具有不均勻的厚度。此外,有機發光層282可透過例如在階梯覆蓋特性方面不好的蒸發沈積製程之製程形成,由此,薄薄地形成於第二平坦化層270之傾斜部分中。因此,第一電極281b或者有機發光層282的電荷產生層與第二電極283可在第二平坦化層270之傾斜部中短路。階梯覆蓋表示一定沈積製程所沈積的層在形成階梯高度的部位中連接而未斷開連接。然而,本揭露之實施例中,因為形成護堤284以覆蓋第二平坦化層270之傾斜部,第一電極281b或者有機發光層282的電荷產生層與第二電極283避免在第二平坦化層270的傾斜部中短路。The second planarization layer 270 may be convexly formed. Since the second planarization layer 270 has a convex shape as shown in FIG. 9, the second planarization layer 270 has a non-uniform thickness. Further, the organic light-emitting layer 282 can be formed by a process such as an evaporation deposition process which is not good in step coverage characteristics, thereby being thinly formed in the inclined portion of the second planarization layer 270. Therefore, the charge generating layer and the second electrode 283 of the first electrode 281b or the organic light emitting layer 282 may be short-circuited in the inclined portion of the second planarizing layer 270. The step coverage means that the layer deposited by a certain deposition process is connected in a portion where the step height is formed without being disconnected. However, in the embodiment of the present disclosure, since the berm 284 is formed to cover the inclined portion of the second planarization layer 270, the charge generation layer of the first electrode 281b or the organic light-emitting layer 282 and the second electrode 283 are prevented from being in the second planarization. The inclined portion of the layer 270 is short-circuited.
圖10係為本揭露另一實施例之有機發光顯示裝置之製造方法之流程圖。圖11A至11C係為沿線I-I'之剖面示意圖,用於描述本揭露另一實施例之有機發光顯示裝置之製造方法。FIG. 10 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 11A to 11C are schematic cross-sectional views along line II' for describing a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure.
除了圖6之作業S106中護堤284、有機發光層282、第二電極283與封裝層290的形成作業以外,圖10所示的本揭露另一實施例之有機發光顯示裝置之製造方法實施上與以上結合圖6及圖7A至7G描述的內容相同。因此,以下,將結合圖10以及圖11A至11C詳細描述護堤284、有機發光層282、第二電極283與封裝層290之形成作業。圖11A至11C所示的剖面示意圖係關於圖9所示的有機發光顯示裝置之製造方法,由此,相同的參考標號表示同樣的元件。In addition to the forming operation of the berm 284, the organic light-emitting layer 282, the second electrode 283, and the encapsulation layer 290 in the operation S106 of FIG. 6, the manufacturing method of the organic light-emitting display device according to another embodiment of the present disclosure shown in FIG. 10 is implemented. The same as described above in connection with FIG. 6 and FIGS. 7A to 7G. Therefore, hereinafter, the formation work of the berm 284, the organic light-emitting layer 282, the second electrode 283, and the encapsulation layer 290 will be described in detail with reference to FIG. 10 and FIGS. 11A to 11C. 11A to 11C are views showing a method of manufacturing the organic light-emitting display device shown in Fig. 9, and the same reference numerals are used to denote the same elements.
以下,將結合圖10及圖11A至11C詳細描述作業S201至S203。Hereinafter, the jobs S201 to S203 will be described in detail with reference to FIG. 10 and FIGS. 11A to 11C.
首先,如圖11A所示,有機材料284'被塗佈於第一平坦化層260與第一電極281b上。First, as shown in FIG. 11A, an organic material 284' is coated on the first planarization layer 260 and the first electrode 281b.
有機材料284’可為丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂或諸如此類。利用狹縫噴塗製程、旋轉噴塗製程、蒸發製程與/或諸如此類,有機材料284'形成於第一平坦化層260與第一電極281b上。形成有機材料284'以填充第二平坦化層270。(圖10之S201)The organic material 284' may be an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like. The organic material 284' is formed on the first planarization layer 260 and the first electrode 281b by a slit coating process, a spin coating process, an evaporation process, and/or the like. The organic material 284' is formed to fill the second planarization layer 270. (S201 of Figure 10)
接下來,如圖11B所示,無須使用遮罩,利用乾蝕刻有機材料284'而形成護堤284。因為未使用遮罩,所以本揭露降低了製造成本。此外,乾蝕刻材料被選擇為一種蝕刻有機材料284'但是無法蝕刻第一電極281b的材料。 Next, as shown in FIG. 11B, the berm 284 is formed by dry etching the organic material 284' without using a mask. Since the mask is not used, the present disclosure reduces manufacturing costs. Further, the dry etching material is selected to be a material that etches the organic material 284' but cannot etch the first electrode 281b.
透過乾蝕刻製程形成護堤284的情況下,護堤284被填充至第二平坦化層270內。特別地,被填充至第二平坦化層270內的護堤284可透過乾蝕刻凸起地形成。因此,透過乾蝕刻製程形成護堤284的情況下,護堤284的厚度t5被調整為比第二平坦化層270的厚度t6薄。(圖10之S202) In the case where the berm 284 is formed by a dry etching process, the berm 284 is filled into the second planarization layer 270. In particular, the berm 284 that is filled into the second planarization layer 270 can be formed by dry etching bumps. Therefore, when the berm 284 is formed by the dry etching process, the thickness t5 of the berm 284 is adjusted to be thinner than the thickness t6 of the second planarizing layer 270. (S202 of Figure 10)
接下來,如圖11C所示,順序地形成有機發光層282、第二電極283與封裝層290。 Next, as shown in FIG. 11C, the organic light-emitting layer 282, the second electrode 283, and the encapsulation layer 290 are sequentially formed.
接下來,有機發光層282形成於第一電極281b與護堤284上。透過沈積製程或溶解製程形成有機發光層282。透過沈積製程形成有機發光層282的情況下,透過蒸發製程形成有機發光層282。 Next, the organic light-emitting layer 282 is formed on the first electrode 281b and the berm 284. The organic light-emitting layer 282 is formed through a deposition process or a dissolution process. In the case where the organic light-emitting layer 282 is formed by a deposition process, the organic light-emitting layer 282 is formed through an evaporation process.
有機發光層282共同形成於複數個發射區域EA中的情況下,有機發光層282形成為發射白光的白色發光層。如果有機發光層282為白色發光層,則有機發光層282形成為兩個或多個堆疊之串接結構。每一堆疊包含電洞傳輸層、至少一個發光層與電子傳輸層。此外,電荷產生層係形成於堆疊之間。電荷產生層包含n-型電荷產生層與p-型電荷產生層。n-型電荷產生層被放置為鄰接下部堆疊。p-型電荷產生層形成於n-型電荷產生層上且放置為鄰接上部堆疊。n-型電荷產生層將電子注入下部堆疊內,以及p-型電荷產生層將電洞注入上部堆疊內。n-型電荷產生層由摻雜鹼金屬(alkali metal)或者鹼土金屬(alkali earth metal)的有機層形成,鹼金屬例如為鋰(Li)、鈉(Na)、鉀(K)或銫(Cs),鹼土金屬比如為鎂、鍶(Sr)、鋇(Ba)或鐳(Ra)。p-型電荷產生層透過在能夠傳輸電洞的有機材料上摻雜摻雜劑而形成。 In the case where the organic light-emitting layer 282 is collectively formed in a plurality of emission regions EA, the organic light-emitting layer 282 is formed as a white light-emitting layer that emits white light. If the organic light-emitting layer 282 is a white light-emitting layer, the organic light-emitting layer 282 is formed in a two or more stacked series structure. Each stack includes a hole transport layer, at least one light emitting layer, and an electron transport layer. Further, a charge generating layer is formed between the stacks. The charge generating layer includes an n-type charge generating layer and a p-type charge generating layer. An n-type charge generation layer is placed adjacent to the lower stack. A p-type charge generating layer is formed on the n-type charge generating layer and placed adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generating layer is formed of an organic layer doped with an alkali metal or an alkali earth metal such as lithium (Li), sodium (Na), potassium (K) or cesium (Cs). The alkaline earth metal is, for example, magnesium, strontium (Sr), barium (Ba) or radium (Ra). The p-type charge generating layer is formed by doping a dopant on an organic material capable of transporting holes.
接下來,第二電極283形成於有機發光層282上。第二電極283為共同形成於複數個發射區域EA中的共同層。第二電極283由透明導電材料(或TCO)比如能夠透射光線的氧化銦錫(ITO)或氧化銦鋅(IZO)、或者半透射導電材料比如鎂、銀或者鎂與銀的合金形成。覆蓋層形成於第二電極283上。Next, the second electrode 283 is formed on the organic light-emitting layer 282. The second electrode 283 is a common layer that is commonly formed in the plurality of emission regions EA. The second electrode 283 is formed of a transparent conductive material (or TCO) such as indium tin oxide (ITO) or indium zinc oxide (IZO) capable of transmitting light, or a semi-transmissive conductive material such as magnesium, silver or an alloy of magnesium and silver. A cover layer is formed on the second electrode 283.
接下來,封裝層290形成於第二電極283上。封裝層290避免氧氣或水分滲透進入有機發光層282與第二電極283內。為此,封裝層290包含至少一個無機層與至少一個有機層。Next, an encapsulation layer 290 is formed on the second electrode 283. The encapsulation layer 290 prevents oxygen or moisture from penetrating into the organic light-emitting layer 282 and the second electrode 283. To this end, the encapsulation layer 290 comprises at least one inorganic layer and at least one organic layer.
舉個例子,封裝層290包含第一無機層291、有機層292與第二無機層293。這種情況下,形成第一無機層291以覆蓋第二電極283。形成有機層292以覆蓋第一無機層291。有機層292被形成足夠的厚度以避免顆粒經由第一無機層291滲透進入有機發光層282與第二電極283內。形成第二無機層293以覆蓋有機層292。For example, the encapsulation layer 290 includes a first inorganic layer 291, an organic layer 292, and a second inorganic layer 293. In this case, the first inorganic layer 291 is formed to cover the second electrode 283. The organic layer 292 is formed to cover the first inorganic layer 291. The organic layer 292 is formed to a sufficient thickness to prevent particles from penetrating into the organic light-emitting layer 282 and the second electrode 283 via the first inorganic layer 291. A second inorganic layer 293 is formed to cover the organic layer 292.
第一無機層291與第二無機層293之每一個由氮化矽、氮化鋁、氮化鋯、氮化鈦、氮化鉿、氮化鉭、氧化矽、氧化鋁、氧化鈦與/或諸如此類形成。有機層292由丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂與/或諸如此類形成。(圖10之S203)Each of the first inorganic layer 291 and the second inorganic layer 293 is made of tantalum nitride, aluminum nitride, zirconium nitride, titanium nitride, tantalum nitride, tantalum nitride, hafnium oxide, aluminum oxide, titanium oxide, and/or And so on. The organic layer 292 is formed of an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like. (S203 of Figure 10)
圖12係為顯示區域中畫素之另一例子之詳細平面示意圖。圖13係為沿圖12之線II-II'之例子之剖面示意圖。Figure 12 is a detailed plan view showing another example of a pixel in a display area. Fig. 13 is a schematic cross-sectional view showing an example taken along line II-II' of Fig. 12.
除了第二平坦化層270、輔助電極281a與第一電極281b以外,圖12及13所示的有機發光顯示裝置的畫素P實質上與以上結合圖4及5描述的內容相同。因此,圖12及13中,不再重複第二平坦化層270、輔助電極281a與第一電極281b以外的元件的詳細描述。The pixels P of the organic light-emitting display device shown in FIGS. 12 and 13 are substantially the same as those described above in connection with FIGS. 4 and 5 except for the second planarization layer 270, the auxiliary electrode 281a, and the first electrode 281b. Therefore, in FIGS. 12 and 13, detailed descriptions of elements other than the second planarization layer 270, the auxiliary electrode 281a, and the first electrode 281b are not repeated.
輔助電極281a形成於第一平坦化層260上。輔助電極281a透過接觸孔CNT連接薄膜電晶體220之汲極224。圖13中,輔助電極281a表示為接觸薄膜電晶體220之汲極224,但是可連接薄膜電晶體220之源極223。The auxiliary electrode 281a is formed on the first planarization layer 260. The auxiliary electrode 281a is connected to the drain 224 of the thin film transistor 220 through the contact hole CNT. In FIG. 13, the auxiliary electrode 281a is shown as contacting the drain 224 of the thin film transistor 220, but may be connected to the source 223 of the thin film transistor 220.
第二平坦化層270形成於輔助電極281a上。第二平坦化層270被填充於接觸孔CNT內,用於平坦化接觸孔CNT造成的階梯高度。第二平坦化層270被填充至接觸孔CNT內,這樣第二平坦化層270的厚度小於接觸孔CNT的厚度,且第二平坦化層270的厚度小於第一平坦化層260的厚度。第二平坦化層270由有機層比如丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂與/或諸如此類形成。The second planarization layer 270 is formed on the auxiliary electrode 281a. The second planarization layer 270 is filled in the contact hole CNT for planarizing the step height caused by the contact hole CNT. The second planarization layer 270 is filled into the contact hole CNT such that the thickness of the second planarization layer 270 is smaller than the thickness of the contact hole CNT, and the thickness of the second planarization layer 270 is smaller than the thickness of the first planarization layer 260. The second planarization layer 270 is formed of an organic layer such as an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, and/or the like.
第二平坦化層270形成為填充接觸孔CNT,用於填充接觸孔CNT的階梯高度。因此,圖13中,圖中表示第二平坦化層270實質上與接觸孔CNT相同,但是本揭露實施例並非限制於此。其他實施例中,第二平坦化層270可形成為比接觸孔CNT的厚度薄。The second planarization layer 270 is formed to fill the contact holes CNT for filling the step height of the contact holes CNT. Therefore, in FIG. 13, the second planarization layer 270 is shown to be substantially the same as the contact hole CNT, but the embodiment is not limited thereto. In other embodiments, the second planarization layer 270 may be formed to be thinner than the thickness of the contact hole CNT.
由於第二平坦化層270的製造製程的特徵的緣故,第二平坦化層270的厚度t7被調整為比第一平坦化層260的厚度t1小。將結合圖15A與15B詳細描述第二平坦化層270的厚度t7被調整為比第一平坦化層260的厚度t1小的理由。Due to the characteristics of the manufacturing process of the second planarization layer 270, the thickness t7 of the second planarization layer 270 is adjusted to be smaller than the thickness t1 of the first planarization layer 260. The reason why the thickness t7 of the second planarization layer 270 is adjusted to be smaller than the thickness t1 of the first planarization layer 260 will be described in detail with reference to FIGS. 15A and 15B.
第一電極281b形成於第二平坦化層270上。如圖12所示,第一電極281b形成為比輔助電極281a寬。此外,如圖12所示,輔助電極281a與第一電極281b的每一個形成為比第二平坦化層270寬。因為第二平坦化層270被形成僅僅填充接觸孔CNT,所以輔助電極281a連接第一平坦化層260上的第一電極281b。圖13中,圖中表示第一電極281b與輔助電極281a在接觸孔CNT兩側外部彼此接觸,但是本實施例並非限制於此。其他實施例中,第一電極281b與輔助電極281a在接觸孔CNT至少一側外部彼此連接。The first electrode 281b is formed on the second planarization layer 270. As shown in FIG. 12, the first electrode 281b is formed to be wider than the auxiliary electrode 281a. Further, as shown in FIG. 12, each of the auxiliary electrode 281a and the first electrode 281b is formed to be wider than the second planarization layer 270. Since the second planarization layer 270 is formed to fill only the contact hole CNT, the auxiliary electrode 281a is connected to the first electrode 281b on the first planarization layer 260. In Fig. 13, the first electrode 281b and the auxiliary electrode 281a are shown to be in contact with each other on both sides of the contact hole CNT, but the embodiment is not limited thereto. In other embodiments, the first electrode 281b and the auxiliary electrode 281a are connected to each other outside at least one side of the contact hole CNT.
輔助電極281a與第一電極281b可以由相同的材料形成。或者,輔助電極281a與第一電極281b的每一個由一種金屬層或者兩種或更多金屬層形成。The auxiliary electrode 281a and the first electrode 281b may be formed of the same material. Alternatively, each of the auxiliary electrode 281a and the first electrode 281b is formed of one metal layer or two or more metal layers.
輔助電極281a與第一電極281b的每一個由透明的導電材料或不透明的導電材料形成。透明的導電材料可為比如氧化銦錫(ITO)或氧化銦鋅(IZO)之透明導電材料(或透明的導電氧化物),或者半透射導電材料比如鎂(Mg)、銀(Ag)或者鎂與銀的合金。不透明的導電材料可為鋁、銀、鉬、鉬與鈦的堆疊結構(Mo/Ti)、鋁與鈦的堆疊結構、鋁與氧化銦錫之堆疊結構(ITO/Al/ITO)、APC合金,或者APC合金與氧化銦錫之堆疊結構(ITO/APC/ITO)。APC合金可為銀、鈀與銅的合金。Each of the auxiliary electrode 281a and the first electrode 281b is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material may be a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) (or a transparent conductive oxide), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or magnesium. Alloy with silver. The opaque conductive material may be a stack structure of aluminum, silver, molybdenum, molybdenum and titanium (Mo/Ti), a stack structure of aluminum and titanium, a stack structure of aluminum and indium tin oxide (ITO/Al/ITO), an APC alloy, Or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy can be an alloy of silver, palladium and copper.
舉個例子,第一電極281b形成為兩層或更多層的堆疊結構,包含具有像鋁或銀的高反射率的導電材料與透明導電材料,以及輔助電極281a由像鉬、鉬與鈦的堆疊結構(Mo/Ti)、銅、或者鋁與鈦的堆疊結構(Ti/Al/Ti)一樣低電阻的材料形成。此外,為了最大化地加寬反射區域,第一電極281b由透明導電材料形成,以及輔助電極281a由如鋁或銀一樣的高反射率的導電材料形成。For example, the first electrode 281b is formed as a stacked structure of two or more layers including a conductive material having a high reflectance like aluminum or silver and a transparent conductive material, and the auxiliary electrode 281a is made of molybdenum, molybdenum, and titanium. A stacked structure (Mo/Ti), copper, or a material having a low electrical resistance such as a stacked structure of aluminum and titanium (Ti/Al/Ti) is formed. Further, in order to maximize the widening of the reflective area, the first electrode 281b is formed of a transparent conductive material, and the auxiliary electrode 281a is formed of a highly reflective conductive material such as aluminum or silver.
圖14係為本揭露另一實施例之有機發光顯示裝置之製造方法之流程圖。圖15A與15B係為沿線II-II'之剖面示意圖,用於描述本揭露另一實施例之有機發光顯示裝置之製造方法。FIG. 14 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 15A and 15B are schematic cross-sectional views along line II-II' for describing a method of fabricating an organic light-emitting display device according to another embodiment of the present disclosure.
除了圖6之作業S104中第二平坦化層270之形成作業以外,圖14所示本揭露另一實施例之有機發光顯示裝置之製造方法實質上與以上結合圖6及圖7A至7G描述之內容相同。因此,以下將結合圖14、15A與15B詳細描述第二平坦化層270之形成作業。圖15A與15B所示的剖面示意圖係關於圖13所示的有機發光顯示裝置之製造方法,由此,相同的參考標號表示同樣元件。In addition to the forming operation of the second planarizing layer 270 in the operation S104 of FIG. 6, the manufacturing method of the organic light emitting display device of the other embodiment shown in FIG. 14 is substantially the same as described above in connection with FIG. 6 and FIGS. 7A to 7G. The content is the same. Therefore, the forming operation of the second planarizing layer 270 will be described in detail below with reference to FIGS. 14, 15A and 15B. 15A and 15B are views showing a method of manufacturing the organic light-emitting display device shown in Fig. 13, and the same reference numerals are used to designate the same elements.
以下結合圖14、15A與15B詳細描述作業S301與S302。Operations S301 and S302 are described in detail below with reference to FIGS. 14, 15A and 15B.
首先,如圖15A所示,有機材料270'被塗佈於第一平坦化層260與輔助電極281a上。有機材料270'可為丙烯酸樹脂、環氧樹脂、酚樹脂、聚醯胺樹脂、聚醯亞胺樹脂諸如此類。利用狹縫噴塗製程、旋轉噴塗製程、蒸發製程與/或諸如此類,有機材料270'形成於第一平坦化層260與輔助電極281a上。有機材料270'被填充於接觸孔CNT內。First, as shown in FIG. 15A, an organic material 270' is applied onto the first planarization layer 260 and the auxiliary electrode 281a. The organic material 270' may be an acrylic resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, or the like. The organic material 270' is formed on the first planarization layer 260 and the auxiliary electrode 281a by a slit spraying process, a spin coating process, an evaporation process, and/or the like. The organic material 270' is filled in the contact hole CNT.
接下來,如圖15B所示,無須使用遮罩,利用乾蝕刻有機材料270'而形成第二平坦化層270。因為未使用遮罩,所以本揭露降低了製造成本。此外,乾蝕刻材料被選擇為一種蝕刻有機材料270'但是無法蝕刻輔助電極281a之材料Next, as shown in FIG. 15B, the second planarization layer 270 is formed by dry etching the organic material 270' without using a mask. Since the mask is not used, the present disclosure reduces manufacturing costs. In addition, the dry etching material is selected as a material that etches the organic material 270' but does not etch the auxiliary electrode 281a.
如上所述,透過乾蝕刻製程形成第二平坦化層270的情況下,第二平坦化層270被僅僅填充至接觸孔CNT內。特別地,與第一平坦化層260相比,填充至接觸孔CNT內的第二平坦化層270係透過乾蝕刻凸起地形成。因此,透過乾蝕刻製程形成第二平坦化層270的情況下,第二平坦化層270的厚度t7被調整為小於第一平坦化層260的厚度t1。因此,第二平坦化層270實質上與接觸孔CNT相同,但是可形成為比接觸孔CNT的高度短。As described above, in the case where the second planarization layer 270 is formed by the dry etching process, the second planarization layer 270 is filled only into the contact holes CNT. In particular, the second planarization layer 270 filled into the contact holes CNT is formed by dry etching bumps as compared with the first planarization layer 260. Therefore, in the case where the second planarization layer 270 is formed by the dry etching process, the thickness t7 of the second planarization layer 270 is adjusted to be smaller than the thickness t1 of the first planarization layer 260. Therefore, the second planarization layer 270 is substantially the same as the contact hole CNT, but may be formed to be shorter than the height of the contact hole CNT.
圖16係為沿圖12之線II-II'之另一例子之剖面示意圖。Fig. 16 is a schematic cross-sectional view showing another example taken along line II-II' of Fig. 12.
除了形成輔助電極281a代替第二平坦化層270以填充接觸孔CNT以外,圖16實質上與以上結合圖5描述的內容相同。因此,圖16中,可省略第二平坦化層270。因此,圖16中,不再重複輔助電極281a以外的相關元件的詳細描述。16 is substantially the same as that described above in connection with FIG. 5 except that the auxiliary electrode 281a is formed in place of the second planarization layer 270 to fill the contact hole CNT. Therefore, in FIG. 16, the second planarization layer 270 can be omitted. Therefore, in Fig. 16, a detailed description of the relevant elements other than the auxiliary electrode 281a will not be repeated.
輔助電極281a形成於第一平坦化層260上。輔助電極281a透過接觸孔CNT連接薄膜電晶體220之汲極224。圖5中,圖中表示輔助電極281a接觸薄膜電晶體220之汲極224,但是可連接薄膜電晶體220之源極223。The auxiliary electrode 281a is formed on the first planarization layer 260. The auxiliary electrode 281a is connected to the drain 224 of the thin film transistor 220 through the contact hole CNT. In Fig. 5, the auxiliary electrode 281a is shown in contact with the drain 224 of the thin film transistor 220, but the source 223 of the thin film transistor 220 can be connected.
輔助電極281a被填充至接觸孔CNT內,用於平坦化接觸孔CNT造成的階梯高度。就是說,形成輔助電極281a以完全填充接觸孔CNT(例如,覆蓋接觸孔CNT),用於填充接觸孔CNT的階梯高度。因此,如圖16所示,輔助電極281a被形成為比接觸孔CNT寬。然而,本揭露之實施例並非限制於此。其他實施例中,輔助電極281a形成為等於或窄於接觸孔CNT。The auxiliary electrode 281a is filled into the contact hole CNT for flattening the step height caused by the contact hole CNT. That is, the auxiliary electrode 281a is formed to completely fill the contact hole CNT (for example, covering the contact hole CNT) for filling the step height of the contact hole CNT. Therefore, as shown in FIG. 16, the auxiliary electrode 281a is formed to be wider than the contact hole CNT. However, embodiments of the present disclosure are not limited thereto. In other embodiments, the auxiliary electrode 281a is formed to be equal to or narrower than the contact hole CNT.
另外,輔助電極281a形成為比發射區域EA寬。這種情況下,第一電極281b、有機發光層282與第二電極283形成於發射區域EA中的輔助電極281a上,由此有機發光層282在發射區域EA中形成為均勻的厚度,從而發射區域EA輸出均勻的光線。In addition, the auxiliary electrode 281a is formed to be wider than the emission area EA. In this case, the first electrode 281b, the organic light-emitting layer 282, and the second electrode 283 are formed on the auxiliary electrode 281a in the emission region EA, whereby the organic light-emitting layer 282 is formed into a uniform thickness in the emission region EA, thereby emitting The area EA outputs uniform light.
輔助電極281a由透明的導電材料或不透明的導電材料形成。透明的導電材料可為比如氧化銦錫(ITO)或氧化銦鋅(IZO)之透明導電材料(或透明的導電氧化物),或者半透射導電材料比如鎂(Mg)、銀(Ag)或者鎂與銀的合金。不透明的導電材料可為鋁、銀、鉬、鉬與鈦的堆疊結構(Mo/Ti)、銅、鋁與鈦的堆疊結構、鋁與氧化銦錫之堆疊結構(ITO/Al/ITO)、APC合金,或者APC合金與氧化銦錫之堆疊結構(ITO/APC/ITO)。APC合金可為銀、鈀與銅的合金。The auxiliary electrode 281a is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material may be a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) (or a transparent conductive oxide), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or magnesium. Alloy with silver. The opaque conductive material may be aluminum, silver, molybdenum, a stacked structure of molybdenum and titanium (Mo/Ti), a stacked structure of copper, aluminum and titanium, a stacked structure of aluminum and indium tin oxide (ITO/Al/ITO), APC. Alloy, or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy can be an alloy of silver, palladium and copper.
如上所述,本揭露之實施例中,形成接觸孔CNT以重疊發射區域EA,以及輔助電極281a被填充至接觸孔CNT內,用於平坦化接觸孔CNT之階梯高度。因此,本揭露之實施例中,有機發光層282形成於輔助電極281a上以具有均勻的厚度。由此,即使當形成接觸孔CNT以重疊發射區域EA時,發射區域EA也均勻地輸出光線。As described above, in the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, and the auxiliary electrode 281a is filled into the contact hole CNT for planarizing the step height of the contact hole CNT. Therefore, in the embodiment of the present disclosure, the organic light-emitting layer 282 is formed on the auxiliary electrode 281a to have a uniform thickness. Thereby, even when the contact holes CNT are formed to overlap the emission area EA, the emission area EA uniformly outputs light.
另外,因為有機發光裝置隨著時間的推移而劣化,所以延長有機發光顯示裝置中有機發光裝置的壽命非常重要。如果有機發光層發射光線的發射區域面積被擴大,則有機發光裝置的壽命也延長。本揭露之實施例中,形成接觸孔CNT以重疊發射區域EA,由此發射區域EA的面積不取決於接觸孔CNT的面積。結果,本揭露之實施例中,發射區域EA的面積被設計為與接觸孔CNT的面積無關,由此發射區域EA的面積被最大化,從而提高有機發光層的壽命。In addition, since the organic light-emitting device deteriorates with the passage of time, it is very important to extend the life of the organic light-emitting device in the organic light-emitting display device. If the area of the emission region where the organic light-emitting layer emits light is enlarged, the life of the organic light-emitting device is also prolonged. In the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, whereby the area of the emission region EA does not depend on the area of the contact hole CNT. As a result, in the embodiment of the present disclosure, the area of the emission area EA is designed to be independent of the area of the contact hole CNT, whereby the area of the emission area EA is maximized, thereby increasing the life of the organic light-emitting layer.
另外,本揭露之實施例中,因為發射區域EA的面積被最大化,所以非發射區域的面積被最小化。因此,如果本揭露之實施例被應用至頭戴式顯示器,則避免以格子圖案看到非發射區域。In addition, in the embodiment of the present disclosure, since the area of the emission area EA is maximized, the area of the non-emission area is minimized. Therefore, if the embodiment of the present disclosure is applied to a head mounted display, it is avoided to see the non-emission area in a lattice pattern.
圖17係為本揭露另一實施例之有機發光顯示裝置之製造方法之流程圖。圖18A至18C係為沿線II-II'之剖面示意圖,用於描述本揭露另一實施例之有機發光顯示裝置之製造方法。17 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 18A to 18C are schematic cross-sectional views along line II-II' for describing a method of fabricating an organic light-emitting display device according to another embodiment of the present disclosure.
圖17所示之本發明另一實施例之有機發光顯示裝置之製造方法之作業S401、S402、S405與S406實質上與圖6之作業S101、S102、S106與S107相同。因此,不再重複圖17所示之本發明另一實施例之有機發光顯示裝置之製造方法之作業S401、S402、S405與S406之詳細描述。圖18A至18C所示之剖面示意圖係關於圖16所示之有機發光顯示裝置之製造方法,由此,同樣的參考標號表示同樣的元件。The operations S401, S402, S405, and S406 of the method of manufacturing the organic light-emitting display device according to another embodiment of the present invention shown in FIG. 17 are substantially the same as the operations S101, S102, S106, and S107 of FIG. Therefore, the detailed description of the operations S401, S402, S405, and S406 of the manufacturing method of the organic light-emitting display device of another embodiment of the present invention shown in FIG. 17 will not be repeated. 18A to 18C are views showing a method of manufacturing the organic light-emitting display device shown in Fig. 16, and the same reference numerals are used to designate the same elements.
以下結合圖17與圖18A至18C詳細描述作業S403至S404。The jobs S403 to S404 are described in detail below with reference to FIG. 17 and FIGS. 18A to 18C.
首先,如圖18A所示,填充接觸孔CNT的第三金屬層281a'形成於整個第一平坦化層260上方。為了填充接觸孔CNT,透過塗佈且硬化液體狀態的導電層而形成第三金屬層281a'。First, as shown in FIG. 18A, a third metal layer 281a' filling the contact holes CNT is formed over the entire first planarization layer 260. In order to fill the contact hole CNT, the third metal layer 281a' is formed by coating and hardening the conductive layer in a liquid state.
接下來,如圖18B所示,第四金屬層281b'形成於整個第三金屬層281a'上方。第四金屬層281b'係透過濺射製程、金屬有機化學氣相沈積製程與/或諸如此類而形成。Next, as shown in FIG. 18B, a fourth metal layer 281b' is formed over the entire third metal layer 281a'. The fourth metal layer 281b' is formed by a sputtering process, a metal organic chemical vapor deposition process, and/or the like.
接下來,透過遮罩製程利用光阻圖案,透過將第三金屬層281a'與第四金屬層281b'同時圖案化而形成輔助電極281a與第一電極281b。Next, the auxiliary electrode 281a and the first electrode 281b are formed by simultaneously patterning the third metal layer 281a' and the fourth metal layer 281b' by the mask process using the photoresist pattern.
輔助電極281a與第一電極281b的每一個由透明的導電材料或不透明的導電材料形成。透明的導電材料為比如氧化銦錫(ITO)或氧化銦鋅(IZO)之透明導電材料(或透明的導電氧化物),或者半透射導電材料比如鎂(Mg)、銀(Ag)或者鎂與銀的合金。不透明的導電材料可為鋁、銀、鉬、鉬與鈦的堆疊結構(Mo/Ti)、銅、鋁與鈦的堆疊結構、鋁與氧化銦錫之堆疊結構(ITO/Al/ITO)、APC合金,或者APC合金與氧化銦錫之堆疊結構(ITO/APC/ITO)。APC合金為銀、鈀與銅的合金。Each of the auxiliary electrode 281a and the first electrode 281b is formed of a transparent conductive material or an opaque conductive material. The transparent conductive material is a transparent conductive material (or transparent conductive oxide) such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag) or magnesium. Silver alloy. The opaque conductive material may be aluminum, silver, molybdenum, a stacked structure of molybdenum and titanium (Mo/Ti), a stacked structure of copper, aluminum and titanium, a stacked structure of aluminum and indium tin oxide (ITO/Al/ITO), APC. Alloy, or a stack structure of APC alloy and indium tin oxide (ITO/APC/ITO). The APC alloy is an alloy of silver, palladium and copper.
舉個例子,第一電極281b形成為兩層或更多層的堆疊結構,包含具有像鋁或銀的高反射率的導電材料與透明導電材料,以及輔助電極281a由像鉬、鉬與鈦的堆疊結構(Mo/Ti)、銅、或者鋁與鈦的堆疊結構(Ti/Al/Ti)一樣低電阻的材料形成。此外,為了最大化地加寬反射區域,第一電極281b由透明導電材料形成,以及輔助電極281a由如鋁或銀一樣的高反射率的導電材料形成。(圖17之S403與S404)For example, the first electrode 281b is formed as a stacked structure of two or more layers including a conductive material having a high reflectance like aluminum or silver and a transparent conductive material, and the auxiliary electrode 281a is made of molybdenum, molybdenum, and titanium. A stacked structure (Mo/Ti), copper, or a material having a low electrical resistance such as a stacked structure of aluminum and titanium (Ti/Al/Ti) is formed. Further, in order to maximize the widening of the reflective area, the first electrode 281b is formed of a transparent conductive material, and the auxiliary electrode 281a is formed of a highly reflective conductive material such as aluminum or silver. (S403 and S404 in Figure 17)
圖19係為顯示區域中畫素之另一例子之詳細平面示意圖。Fig. 19 is a detailed plan view showing another example of a pixel in a display area.
除了圖19所示的畫素區域中畫素P被提供為正方形以外,圖19之畫素P實質上與以上結合圖4描述的內容相同。因此,圖19中,省略畫素P之相關元件之詳細描述。The pixel P of Fig. 19 is substantially the same as that described above in connection with Fig. 4 except that the pixel P is provided as a square in the pixel region shown in Fig. 19. Therefore, in Fig. 19, a detailed description of the relevant elements of the pixel P is omitted.
依照本揭露之實施例,畫素P可提供為如圖19所示之正方形,以及這種情況下,與圖4中每一畫素被提供為矩形的情況相比,可沿其他方向(橫向)與一個方向(垂直方向)擴大發射區域EA之面積,由此進一步加寬發射區域EA。因此,本揭露之實施例中,提高了有機發光層之壽命,此外,非發射區域之面積被最小化。According to an embodiment of the present disclosure, the pixel P may be provided as a square as shown in FIG. 19, and in this case, in other directions (horizontal) as compared with the case where each pixel in FIG. 4 is provided as a rectangle The area of the emission area EA is enlarged with one direction (vertical direction), thereby further widening the emission area EA. Therefore, in the embodiment of the present disclosure, the life of the organic light-emitting layer is improved, and further, the area of the non-emission region is minimized.
另外,依照本揭露之實施例,畫素P被提供為圖19所示之正方形,這種情況下,第一電極281b連接接觸孔CNT全部側面外部的輔助電極281a。因此,即使當形成輔助電極281a、第一電極281b與接觸孔CNT時出現製程錯誤時,第一電極281b可連接接觸孔CNT至少一個側邊外部的輔助電極281a。Further, according to the embodiment of the present disclosure, the pixel P is provided as a square as shown in Fig. 19. In this case, the first electrode 281b is connected to the auxiliary electrode 281a outside the entire side surface of the contact hole CNT. Therefore, even when a process error occurs when the auxiliary electrode 281a, the first electrode 281b, and the contact hole CNT are formed, the first electrode 281b can connect the auxiliary electrode 281a outside the at least one side of the contact hole CNT.
沿圖19之線III-III'之剖面結構實質上與沿圖5之線I-I'之剖面示意圖或者沿圖9之線I-I'之剖面示意圖相同。The cross-sectional structure along the line III-III' of Fig. 19 is substantially the same as the cross-sectional view taken along line I-I' of Fig. 5 or the cross-sectional view taken along line I-I' of Fig. 9.
圖20係為顯示區域中畫素之另一例子之詳細平面示意圖。Figure 20 is a detailed plan view showing another example of a pixel in a display area.
除了圖20所示之顯示區域中的畫素P被提供為正方形以外,圖20之畫素P實質上與以上結合圖12描述的內容相同。因此,在圖20中,省略畫素P之相關元件之詳細描述。The pixel P of Fig. 20 is substantially the same as that described above in connection with Fig. 12 except that the pixel P in the display area shown in Fig. 20 is provided as a square. Therefore, in Fig. 20, a detailed description of the relevant elements of the pixel P is omitted.
依照本揭露之實施例,圖20中畫素P被提供為正方形,這種情況下,與圖12中每一畫素被提供為矩形的情況相比,沿其他方向(橫向)與一個方向(垂直方向)可擴大發射區域EA之面積,由此進一步加寬發射區域EA。因此,本揭露之實施例中,提高了有機發光層之壽命,此外,非發射區域之面積被最小化。According to an embodiment of the present disclosure, the pixel P in FIG. 20 is provided as a square, in which case, in the other direction (lateral direction) and one direction (in comparison with the case where each pixel in FIG. 12 is provided as a rectangle) The vertical direction) enlarges the area of the emission area EA, thereby further widening the emission area EA. Therefore, in the embodiment of the present disclosure, the life of the organic light-emitting layer is improved, and further, the area of the non-emission region is minimized.
另外,依照本揭露之實施例,圖20中畫素P被提供為正方形,這種情況下,第一電極281b在接觸孔CNT全部側面的外部連接輔助電極281a。因此,即使當形成輔助電極281a、第一電極281b與接觸孔CNT時出現製程錯誤時,第一電極281b可連接接觸孔CNT至少一個側邊外部的輔助電極281a。Further, according to the embodiment of the present disclosure, the pixel P in Fig. 20 is provided in a square shape, in which case the first electrode 281b is connected to the auxiliary electrode 281a outside the entire side surface of the contact hole CNT. Therefore, even when a process error occurs when the auxiliary electrode 281a, the first electrode 281b, and the contact hole CNT are formed, the first electrode 281b can connect the auxiliary electrode 281a outside the at least one side of the contact hole CNT.
沿圖20之線IV-IV'之剖面結構實質上與沿圖13之線II-II'之剖面示意圖或沿圖16之線II-II'之剖面示意圖相同。The cross-sectional structure along line IV-IV' of Fig. 20 is substantially the same as the cross-sectional view taken along line II-II' of Fig. 13 or the cross-sectional view taken along line II-II' of Fig. 16.
圖21A與21B係為本揭露實施例之頭戴式顯示器之代表性示意圖。21A and 21B are schematic diagrams showing a head-mounted display according to an embodiment of the present disclosure.
請參考圖21A與21B,本揭露實施例之頭戴式顯示器包含顯示容納殼10、左眼透鏡20a、右眼透鏡20b與可頭戴連接帶30。Referring to FIGS. 21A and 21B, the head mounted display of the disclosed embodiment includes a display housing 10, a left eye lens 20a, a right eye lens 20b, and a head mountable strap 30.
顯示容納殼10容納顯示裝置,且將顯示裝置顯示的影像供應至左眼透鏡20a與右眼透鏡20b。顯示裝置可為本發明實施例之有機發光顯示裝置。本發明實施例之有機發光顯示裝置已經結合圖2至20加以詳細描述。The display housing case 10 houses the display device, and supplies the image displayed by the display device to the left-eye lens 20a and the right-eye lens 20b. The display device may be an organic light emitting display device of an embodiment of the present invention. The organic light emitting display device of the embodiment of the present invention has been described in detail in conjunction with FIGS. 2 to 20.
顯示容納殼10被設計為供應相同的影像至左眼透鏡20a與右眼透鏡20b。或者,顯示容納殼10被設計為使得在左眼透鏡20a上顯示左眼影像以及在右眼透鏡20b顯示右眼影像。The display housing case 10 is designed to supply the same image to the left-eye lens 20a and the right-eye lens 20b. Alternatively, the display housing case 10 is designed such that the left eye image is displayed on the left eye lens 20a and the right eye image is displayed on the right eye lens 20b.
如圖22所示,左眼透鏡20a前方放置的左眼有機發光顯示裝置11以及右眼透鏡20b前方放置的右眼有機發光顯示裝置12被容納於顯示容納殼10內。圖22表示從上方看顯示容納殼10時的剖面示意圖。左眼有機發光顯示裝置11顯示左眼影像,以及右眼有機發光顯示裝置12顯示右眼影像。使用者的左眼LE透過左眼透鏡20a看到左眼有機發光顯示裝置11顯示的左眼影像,以及使用者的右眼RE透過右眼透鏡20b看到右眼有機發光顯示裝置12顯示的右眼影像。As shown in FIG. 22, the left-eye organic light-emitting display device 11 placed in front of the left-eye lens 20a and the right-eye organic light-emitting display device 12 placed in front of the right-eye lens 20b are housed in the display housing case 10. Fig. 22 is a schematic cross-sectional view showing the housing case 10 as seen from above. The left-eye organic light-emitting display device 11 displays a left-eye image, and the right-eye organic light-emitting display device 12 displays a right-eye image. The left eye LE of the user sees the left eye image displayed by the left eye organic light emitting display device 11 through the left eye lens 20a, and the right eye RE of the user sees the right eye displayed by the right eye organic light emitting display device 12 through the right eye lens 20b. Eye image.
另外,圖22中,在左眼透鏡20a與左眼有機發光顯示裝置11之間以及在右眼透鏡20b與右眼有機發光顯示裝置12之間可進一步放置放大透鏡。這種情況下,由於放大透鏡的緣故,左眼有機發光顯示裝置11上顯示的影像與右眼有機發光顯示裝置12上顯示的影像被放大且被使用者看到。In addition, in FIG. 22, a magnifying lens may be further disposed between the left-eye lens 20a and the left-eye organic light-emitting display device 11 and between the right-eye lens 20b and the right-eye organic light-emitting display device 12. In this case, the image displayed on the left-eye organic light-emitting display device 11 and the image displayed on the right-eye organic light-emitting display device 12 are enlarged and viewed by the user due to the magnifying lens.
如圖23所示,左眼透鏡20a與右眼透鏡20b前方放置的鏡面反射器13以及鏡面反射器13上放置的有機發光顯示裝置14被容納於顯示容納殼10中。圖23表示從側面查看顯示容納殼10時之剖面示意圖。有機發光顯示裝置14在朝向鏡面反射器13的方向顯示影像,以及鏡面反射器13朝左眼透鏡20a與右眼透鏡20b的方向將有機發光顯示裝置14顯示的影像全部反射。因此,有機發光顯示裝置14顯示的影像被供應至左眼透鏡20a與右眼透鏡20b。圖23中,為了便於描述,圖中僅僅表示使用者的左眼透鏡20a與左眼LE。如圖23所示,使用鏡面反射器13的情況下,可薄薄地提供顯示容納殼10。As shown in FIG. 23, the specular reflector 13 placed in front of the left-eye lens 20a and the right-eye lens 20b and the organic light-emitting display device 14 placed on the specular reflector 13 are housed in the display housing case 10. Fig. 23 is a schematic cross-sectional view showing the accommodating case 10 as viewed from the side. The organic light-emitting display device 14 displays an image in the direction toward the specular reflector 13, and the specular reflector 13 totally reflects the image displayed by the organic light-emitting display device 14 in the direction of the left-eye lens 20a and the right-eye lens 20b. Therefore, the image displayed by the organic light-emitting display device 14 is supplied to the left-eye lens 20a and the right-eye lens 20b. In Fig. 23, for convenience of description, only the left eye lens 20a and the left eye LE of the user are shown in the drawing. As shown in FIG. 23, in the case where the specular reflector 13 is used, the display housing case 10 can be provided thinly.
另外,圖22中,在左眼透鏡20a與鏡面反射器13之間以及在右眼透鏡20b與鏡面反射器13之間可進一步放置放大透鏡。這種情況下,由於放大透鏡的緣故,左眼有機發光顯示裝置11上顯示的影像與右眼有機發光顯示裝置12上顯示的影像被放大且被使用者看到。In addition, in FIG. 22, a magnifying lens may be further disposed between the left-eye lens 20a and the specular reflector 13 and between the right-eye lens 20b and the specular reflector 13. In this case, the image displayed on the left-eye organic light-emitting display device 11 and the image displayed on the right-eye organic light-emitting display device 12 are enlarged and viewed by the user due to the magnifying lens.
可頭戴連接帶30被固定至顯示容納殼10。可頭戴連接帶30被代表性地表示被提供以圍繞使用者的頂部與兩側,但是並非限制於此。可頭戴連接帶30可固定頭戴式顯示器至使用者的頭部,以及被實施為眼鏡型或頭盔型。The head mount strap 30 is fixed to the display housing case 10. The headgear strap 30 is representatively provided to surround the top and sides of the user, but is not limited thereto. The headgear strap 30 can secure the head mounted display to the user's head and be implemented as a glasses or helmet.
習知技術之頭戴式顯示器中,正好在使用者的眼睛的前方看到有機發光顯示裝置顯示的影像,因為在這個原因,如圖1所示,以格子圖案看到非發射區域。然而,本揭露之實施例中,形成接觸孔CNT以重疊發射區域EA,以及第二平坦化層270被填充於接觸孔CNT內,用於平坦化接觸孔CNT之階梯高度。因此,本揭露之實施例中,有機發光層形成於第二平坦化層270上以具有均勻的厚度,由此,即使當形成接觸孔CNT以重疊發射區域EA時,發射區域EA也均勻地輸出光線。因此,本揭露之實施例中,因為發射區域EA的面積被最大化,所以非發射區域的面積被最小化。因此,如果本揭露之實施例被應用至頭戴式顯示器,則如圖24所示避免以格子圖案看到非發射區域。In the head-mounted display of the prior art, the image displayed by the organic light-emitting display device is seen just in front of the user's eyes, because for this reason, as shown in Fig. 1, the non-emission region is seen in a lattice pattern. However, in the embodiment of the present disclosure, the contact hole CNT is formed to overlap the emission region EA, and the second planarization layer 270 is filled in the contact hole CNT for planarizing the step height of the contact hole CNT. Therefore, in the embodiment of the present disclosure, the organic light-emitting layer is formed on the second planarization layer 270 to have a uniform thickness, whereby the emission region EA is uniformly output even when the contact hole CNT is formed to overlap the emission region EA. Light. Therefore, in the embodiment of the present disclosure, since the area of the emission area EA is maximized, the area of the non-emission area is minimized. Therefore, if the embodiment of the present disclosure is applied to a head mounted display, the non-emission area is prevented from being seen in a lattice pattern as shown in FIG.
如上所述,依照本揭露之實施例,形成接觸孔以重疊發射區域,以及第二平坦化層被填充於接觸孔內,從而平坦化接觸孔的階梯高度。因此,依照本揭露之實施例,有機發光層形成於第二平坦化層上以具有均勻的厚度,由此即使當形成接觸孔以重疊發射區域時,發射區域也可均勻地輸出光線。As described above, according to the embodiment of the present disclosure, the contact holes are formed to overlap the emission regions, and the second planarization layer is filled in the contact holes, thereby planarizing the step height of the contact holes. Therefore, according to an embodiment of the present disclosure, the organic light-emitting layer is formed on the second planarization layer to have a uniform thickness, whereby the emission region can uniformly output light even when a contact hole is formed to overlap the emission region.
另外,依照本揭露之實施例,因為形成接觸孔以重疊發射區域,則發射區域的面積不取決於接觸孔的面積。結果,依照本揭露之實施例,發射區域的面積被設計為與接觸孔的面積無關,由此,發射區域的面積被最大化,從而提高有機發光層的壽命。Further, according to the embodiment of the present disclosure, since the contact holes are formed to overlap the emission regions, the area of the emission regions does not depend on the area of the contact holes. As a result, according to the embodiment of the present disclosure, the area of the emission area is designed to be independent of the area of the contact hole, whereby the area of the emission area is maximized, thereby increasing the life of the organic light-emitting layer.
另外,依照本揭露之實施例,因為發射區域的面積被最大化,所以非發射區域的面積被最小化。因此,本揭露之實施例被應用至頭戴式顯示器的情況下,避免以格子圖案看到非發射區域。Additionally, in accordance with embodiments of the present disclosure, since the area of the emission area is maximized, the area of the non-emission area is minimized. Therefore, in the case where the embodiment of the present disclosure is applied to a head mounted display, it is avoided that the non-emission area is seen in a lattice pattern.
另外,依照本揭露之實施例,形成護堤以覆蓋第二平坦化層的傾斜部。因此,依照本揭露之實施例,在第二平坦化層的傾斜部中薄薄地形成有機發光層,從而避免第一電極或有機發光層之電荷產生層與第二電極之間出現短路。Further, in accordance with an embodiment of the present disclosure, a berm is formed to cover the inclined portion of the second planarization layer. Therefore, according to the embodiment of the present disclosure, the organic light-emitting layer is thinly formed in the inclined portion of the second planarization layer, thereby avoiding occurrence of a short circuit between the charge generating layer of the first electrode or the organic light-emitting layer and the second electrode.
另外,依照本揭露之實施例,每一畫素被提供為正方形,這種情況下,與每一畫素被提供為矩形的情況相比,在其他方向(橫向)與一個方向(垂直方向)可擴大發射區域之面積,由此進一步加寬發射區域。因此,本揭露之實施例中,提高了有機發光層之壽命,此外,非發射區域之面積被最小化。本揭露消除頭戴式顯示器所顯示的影像的格子圖案。In addition, according to an embodiment of the present disclosure, each pixel is provided as a square, in which case, in other directions (lateral direction) and one direction (vertical direction), compared to the case where each pixel is provided as a rectangle. The area of the emission area can be enlarged, thereby further widening the emission area. Therefore, in the embodiment of the present disclosure, the life of the organic light-emitting layer is improved, and further, the area of the non-emission region is minimized. The present disclosure eliminates the lattice pattern of the image displayed by the head mounted display.
雖然本發明以前述之實施例揭露如上,然其並非用以限定本發明。在不脫離本發明之精神和範圍內,所為之更動與潤飾,均屬本發明之專利保護範圍。關於本發明所界定之保護範圍請參考所附之申請專利範圍。Although the present invention has been disclosed above in the foregoing embodiments, it is not intended to limit the invention. It is within the scope of the invention to be modified and modified without departing from the spirit and scope of the invention. Please refer to the attached patent application for the scope of protection defined by the present invention.
100‧‧‧有機發光顯示裝置
110‧‧‧顯示面板
DA‧‧‧顯示區域
NDA‧‧‧非顯示區域
P‧‧‧畫素
111‧‧‧第一基板
112‧‧‧第二基板
120‧‧‧閘極驅動器
130‧‧‧源極驅動器積體電路
140‧‧‧撓性膜
150‧‧‧電路板
160‧‧‧時序控制器
EA‧‧‧發射區域
CNT‧‧‧接觸孔
C1‧‧‧接觸孔
210‧‧‧緩衝層
220‧‧‧薄膜電晶體
221‧‧‧主動層
222‧‧‧閘極
223‧‧‧源極
224‧‧‧汲極
230‧‧‧閘極絕緣層
240‧‧‧層間絕緣層
250‧‧‧鈍化層
260‧‧‧第一平坦化層
270‧‧‧第二平坦化層
270'‧‧‧有機材料
280‧‧‧有機發光裝置
281a‧‧‧輔助電極
281a'‧‧‧第三金屬層
281b‧‧‧第一電極
281b'‧‧‧第四金屬層
282‧‧‧有機發光層
283‧‧‧第二電極
284‧‧‧護堤
284'‧‧‧有機材料
290‧‧‧封裝層
291‧‧‧第一無機層
292‧‧‧有機層
293‧‧‧第二無機層
310‧‧‧黑色矩陣
321、322、323‧‧‧彩色濾光片
330‧‧‧黏合層
t1‧‧‧厚度
t2‧‧‧厚度
t3‧‧‧第三厚度
t4‧‧‧距離
t5‧‧‧厚度
t6‧‧‧厚度
t7‧‧‧厚度
M‧‧‧遮罩
10‧‧‧顯示容納殼
11‧‧‧左眼有機發光顯示裝置
12‧‧‧右眼有機發光顯示裝置
13‧‧‧鏡面反射器
14‧‧‧有機發光顯示裝置
20a‧‧‧左眼透鏡
20b‧‧‧右眼透鏡
30‧‧‧可頭戴連接帶
LE‧‧‧左眼
RE‧‧‧右眼100‧‧‧Organic light-emitting display device
110‧‧‧ display panel
DA‧‧‧ display area
NDA‧‧‧ non-display area
P‧‧‧ pixels
111‧‧‧First substrate
112‧‧‧second substrate
120‧‧‧gate driver
130‧‧‧Source Driver Integrated Circuit
140‧‧‧Flexible film
150‧‧‧ boards
160‧‧‧Sequence Controller
EA‧‧‧ launch area
CNT‧‧‧ contact hole
C1‧‧‧ contact hole
210‧‧‧buffer layer
220‧‧‧film transistor
221‧‧‧ active layer
222‧‧‧ gate
223‧‧‧ source
224‧‧‧汲polar
230‧‧‧ gate insulation
240‧‧‧Interlayer insulation
250‧‧‧ Passivation layer
260‧‧‧First flattening layer
270‧‧‧Second flattening layer
270'‧‧‧Organic materials
280‧‧‧Organic lighting device
281a‧‧‧Auxiliary electrode
281a'‧‧‧ third metal layer
281b‧‧‧first electrode
281b'‧‧‧ fourth metal layer
282‧‧‧Organic light-emitting layer
283‧‧‧second electrode
284‧‧‧Berm
284'‧‧‧Organic materials
290‧‧‧Encapsulation layer
291‧‧‧First inorganic layer
292‧‧‧Organic layer
293‧‧‧Second inorganic layer
310‧‧‧Black matrix
321, 322, 323‧‧‧ color filters
330‧‧‧Adhesive layer
T1‧‧‧ thickness
T2‧‧‧ thickness
T3‧‧‧ third thickness
Distance t4‧‧‧
T5‧‧‧ thickness
T6‧‧‧ thickness
T7‧‧‧ thickness
M‧‧‧ mask
10‧‧‧ display housing
11‧‧‧Left eye organic light emitting display device
12‧‧‧right-eye organic light-emitting display device
13‧‧‧ specular reflector
14‧‧‧Organic light-emitting display device
20a‧‧‧Left eye lens
20b‧‧‧right eye lens
30‧‧‧ Headable strap
LE‧‧‧Left eye
RE‧‧‧ right eye
圖1係為習知技術之頭戴式顯示器所顯示的影像的格子圖案之代表性示意圖。 圖2係為本揭露實施例之有機發光顯示裝置之透視圖。 圖3係為本揭露實施例之圖2之第一基板、閘極驅動器、源極驅動積體電路、撓性膜、電路板與時序控制器之平面示意圖。 圖4係為本揭露實施例之顯示區域中畫素之例子之詳細平面示意圖。 圖5係為本揭露實施例之沿圖4之線I-I'之例子之剖面示意圖。 圖6係為本揭露實施例之有機發光顯示裝置之製造方法之流程圖。 圖7A至7G係為沿線I-I'之剖面示意圖,用於描述本揭露實施例之有機發光顯示裝置之製造方法。 圖8A與8B係為沿線I-I'之剖面示意圖,表示本揭露實施例之圖6之步驟S105之詳細作業。 圖9係為本揭露實施例之沿圖4之線I-I'之另一例子之剖面示意圖。 圖10係為本揭露另一實施例之有機發光顯示裝置之製造方法之流程圖。 圖11A至11C係為沿線I-I'之剖面示意圖,用於描述本揭露另一實施例之有機發光顯示裝置之製造方法。 圖12係為本揭露實施例之顯示區域中畫素之另一例子之詳細平面示意圖。 圖13係為沿圖12之線II-II'之例子之剖面示意圖。 圖14係為本揭露另一實施例之有機發光顯示裝置之製造方法之流程圖。 圖15A與15B係為沿線II-II'之剖面示意圖,用於描述本揭露另一實施例之有機發光顯示裝置之製造方法。 圖16係為沿圖12之線II-II'之另一例子之剖面示意圖。 圖17係為本揭露另一實施例之有機發光顯示裝置之製造方法之流程圖。 圖18A至18C係為沿線II-II'之剖面示意圖,用於描述本揭露另一實施例之有機發光顯示裝置之製造方法。 圖19係為本揭露一個實施例之顯示區域中畫素之另一例子之詳細平面示意圖。 圖20係為本揭露一個實施例之顯示區域中畫素之另一例子之詳細平面示意圖。 圖21A與21B係為本揭露實施例之頭戴式顯示器之代表性示意圖。 圖22係為本揭露一個實施例之圖21A與21B之顯示容納殼之例子之代表性示意圖。 圖23係為本揭露一個實施例之圖21A與21B之顯示容納殼之例子之代表性示意圖。 圖24係為本揭露實施例之頭戴式顯示器所顯示的影像的格子圖案之代表性示意圖。1 is a schematic diagram showing a lattice pattern of an image displayed by a head-mounted display of the prior art. 2 is a perspective view of an organic light emitting display device according to an embodiment of the present disclosure. 3 is a plan view showing the first substrate, the gate driver, the source driving integrated circuit, the flexible film, the circuit board, and the timing controller of FIG. 2 according to the embodiment of the present disclosure. 4 is a detailed plan view showing an example of a pixel in a display area according to an embodiment of the present disclosure. FIG. 5 is a cross-sectional view showing an example of a line I-I' of FIG. 4 according to an embodiment of the present disclosure. 6 is a flow chart of a method of fabricating an organic light emitting display device according to an embodiment of the present disclosure. 7A to 7G are schematic cross-sectional views along line II' for describing a method of fabricating the organic light-emitting display device of the disclosed embodiment. 8A and 8B are schematic cross-sectional views taken along line II', showing the detailed operation of step S105 of Fig. 6 of the embodiment of the present disclosure. Figure 9 is a cross-sectional view showing another example of the line II' of Figure 4 in accordance with an embodiment of the present disclosure. FIG. 10 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 11A to 11C are schematic cross-sectional views along line II' for describing a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. FIG. 12 is a detailed plan view showing another example of pixels in a display area according to an embodiment of the present disclosure. Fig. 13 is a schematic cross-sectional view showing an example taken along line II-II' of Fig. 12. FIG. 14 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 15A and 15B are schematic cross-sectional views along line II-II' for describing a method of fabricating an organic light-emitting display device according to another embodiment of the present disclosure. Fig. 16 is a schematic cross-sectional view showing another example taken along line II-II' of Fig. 12. 17 is a flow chart of a method of fabricating an organic light emitting display device according to another embodiment of the present disclosure. 18A to 18C are schematic cross-sectional views along line II-II' for describing a method of fabricating an organic light-emitting display device according to another embodiment of the present disclosure. FIG. 19 is a detailed plan view showing another example of a pixel in a display area according to an embodiment of the present disclosure. FIG. 20 is a detailed plan view showing another example of a pixel in a display area according to an embodiment of the present disclosure. 21A and 21B are schematic diagrams showing a head-mounted display according to an embodiment of the present disclosure. Figure 22 is a schematic illustration of an example of the display housing of Figures 21A and 21B in accordance with one embodiment of the present disclosure. Figure 23 is a schematic illustration of an example of the display containment housing of Figures 21A and 21B in accordance with one embodiment of the present disclosure. FIG. 24 is a schematic diagram showing a lattice pattern of an image displayed on a head mounted display according to an embodiment of the present disclosure.
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