TWI677980B - Light emitting device - Google Patents

Abstract

A light emitting device includes a first electrode, a second electrode, an organic layer, and a barrier layer. The organic layer is located between the first electrode and the second electrode, and the barrier layer is located in the organic layer, between the second electrode and the organic layer, or between the first electrode and the organic layer. The light emitting device is divided into a display area and a non-display area, and the barrier layer is located in the non-display area.

Description

Light emitting device

The present invention relates to a light-emitting device, and more particularly, to a light-emitting device used at the edge of a display area of a display panel.

An existing display panel has a display area and a non-display area. The display area includes a plurality of light-emitting devices. Each light-emitting device includes a light-emitting layer and a corresponding active element. Each light-emitting layer can form a pixel. Will be arranged to form a pixel array, and this pixel array can be used to display an image. In some applications, the display panel or its display area may be arc-shaped or have arc-shaped edges. Such a display panel is applied to, for example, a smart watch. The display area of the display panel of the smart watch can be circular in accordance with the shape of the watch body, while the non-display area is circular in shape around the display area.

According to the display panel of the prior art, since the light-emitting layer of the existing light-emitting device is rectangular, the light-emitting devices arranged at the edge of the display area will cause the edges of the image presented in the display area to appear jagged. The user will see the jagged edges of the image, resulting in a poor user experience.

At least one embodiment of the present invention provides a light emitting device to prevent the edges of the image displayed in the display area of the display panel from being jagged.

At least one embodiment of the present invention provides a light emitting device including a first electrode, a second electrode, an organic layer, and a barrier layer. The organic layer is located between the first electrode and the second electrode, The barrier layer is located in the organic layer, between the second electrode and the organic layer, or between the first electrode and the organic layer. The light emitting device is divided into a display area and a non-display area, and the barrier layer is located in the non-display area.

At least one embodiment of the present invention provides a light emitting device, which includes a first electrode, a second electrode, and an organic layer, and the organic layer is located between the first electrode and the second electrode. The light emitting device is divided into a display area and a non-display area, and the thickness of the organic layer in the non-display area is smaller than the thickness of the organic layer in the display area.

In summary, the light-emitting device according to the embodiments of the present invention can be disposed at the edge of the display area of the display panel, and the thickness of the non-display area through the barrier layer in the non-display area or through the organic layer is less than The thickness of the display area is designed so that the light-emitting devices arranged at the edges of the display area can partially emit light and not emit light at the same time. The junction between the light emission and non-light emission of the light-emitting device can correspond to the shape of the edge of the display area, thereby avoiding the display area The edges of the image are jagged and improve the user experience.

The detailed features and advantages of the present invention are described in detail in the following embodiments. The content is sufficient for anyone familiar with the relevant technology to understand and implement the technical content of the present invention, and according to the content disclosed in this specification, the scope of patent applications and the drawings. Anyone skilled in the relevant art can easily understand the related objects and advantages of the present invention.

10‧‧‧Display Panel

11‧‧‧display area

12‧‧‧ non-display area

100, 100a‧‧‧light-emitting device

110‧‧‧ substrate

120‧‧‧active element

121‧‧‧ the first conductor layer

122‧‧‧first insulating layer

123‧‧‧Channel layer

124‧‧‧Second conductor layer

125‧‧‧Second insulation layer

131‧‧‧first electrode

132‧‧‧Second electrode

140‧‧‧ organic layer

141‧‧‧Light-emitting layer

142‧‧‧Auxiliary layer

1421‧‧‧First Transport Layer

1422, 1422a‧‧‧Second Transport Layer

150‧‧‧ pixel definition layer

160, 160a‧‧‧ barrier layer

D‧‧‧ Drain

D1, D2‧‧‧thickness

EIL‧‧‧ Electron Injection Layer

ETL‧‧‧Electronic Transmission Layer

G‧‧‧Gate

HIL‧‧‧ Hole injection layer

HTL‧‧‧ Hole Transmission Layer

MA‧‧‧Mask

ND‧‧‧normal direction

S‧‧‧Source

FIG. 1 is a schematic top view of a display panel according to an embodiment of the present invention; FIG. 2 is a partially enlarged schematic view of a circled portion of FIG. 1; FIG. 3 is a schematic cross-sectional view of a line 3-3 of FIG. 2. , Which shows the light emitting device according to the first embodiment of the present invention; 4 is a schematic cross-sectional view of a light-emitting device according to a second embodiment of the present invention; FIG. 5 is a cross-sectional schematic view of a light-emitting device according to a third embodiment of the present invention; and FIG. 6 is a light-emitting device according to a fourth embodiment of the present invention 7 is a schematic sectional view of a light emitting device according to a fifth embodiment of the present invention; FIG. 8 is a schematic sectional view of a light emitting device of a sixth embodiment of the present invention; and FIG. 9 is a seventh embodiment of the present invention 10 is a schematic top view of a display panel evaporation process according to an embodiment of the present invention; FIG. 11 is a schematic partial cross-sectional view 1 of the display panel of FIG. 10; FIG. 10 is a schematic partial cross-sectional view of the display panel 2; FIG. 13 is a schematic top view showing a display panel evaporation process according to another embodiment of the present invention; FIG. 14 is a partial cross-sectional view 1 of the display panel of FIG. 13; FIG. 15 is a second partial schematic view of the display panel of FIG. 13.

Please refer to FIG. 1 and FIG. 2, FIG. 1 is a schematic top view of a display panel 10 according to an embodiment of the present invention, and FIG. 2 is a partially enlarged schematic view of a circled part in FIG. 1. As shown in FIGS. 1 and 2, in this embodiment, the display panel 10 is divided into a display area 11 and a non-display area 12, and the display panel 10 includes a plurality of light emitting devices 100 and 100 a, and the light emitting devices 100 and 100 a are arranged in an array. . The display area 11 is circular, and the non-display area 12 surrounds the display area 11, but is not limited thereto. The light-emitting device 100 a is located in the display area 11, and the light-emitting device 100 is located at the edge of the display area 11, that is, the boundary between the display area 11 and the non-display area 12, and the edge of the display area 11 will be arc-shaped.

Please refer to FIG. 3. FIG. 3 is a schematic cross-sectional view at the line 3-3 in FIG. 2, which illustrates the light emitting devices 100 and 100 a according to the first embodiment of the present invention. As shown in FIG. 3, in this embodiment, The light emitting devices 100 and 100a are disposed on the substrate 110, and each of the light emitting devices 100 and 100a is connected to a corresponding active device 120, respectively. Each light emitting device 100, 100a includes a first electrode 131, a second electrode 132, and an organic layer 140. The organic layer 140 is located between the first electrode 131 and the second electrode 132, and a pixel is provided between each light emitting device 100, 100a. The definition layer 150. The pixel definition layer 150 separates the first electrode 131, the second electrode 132, and the organic layer 140 of each light-emitting device 100 and 100a to form a plurality of pixels.

As shown in FIG. 3, in this embodiment, the first electrode 131 of each light-emitting device 100, 100a is connected to the corresponding active device 120, and the active device 120 can apply a specific voltage to the corresponding light-emitting device 100, 100a, so that the light-emitting device The organic layers 140 of 100 and 100a emit light. The difference between the light-emitting device 100 and the light-emitting device 100a is that the light-emitting device 100 is located at the junction of the display area 11 and the non-display area 12, so the light-emitting device 100 itself is correspondingly divided into a display area 11 and a non-display area 12. In addition, the light-emitting device 100 further includes a barrier layer 160. The barrier layer 160 is located in the non-display area 12.

In this embodiment, the display area 11 may be defined as overlapping with the display area 11 and not overlapping with the non-display area 12 in the normal direction ND of the substrate 110; the location in the non-display area 12 may be defined as: It overlaps the non-display area 12 and does not overlap the display area 11 in the normal direction ND of the substrate 110. In other words, as shown in FIG. 3, the barrier layer 160 of the light emitting device 100 overlaps the non-display area 12 and does not overlap the display area 11 in the normal direction ND of the substrate 110.

As shown in FIG. 3, in this embodiment, the barrier layer 160 of the light emitting device 100 is located between the second electrode 132 and the organic layer 140. In some embodiments, the blocking layer 160 of the light emitting device 100 may be located in the organic layer 140. In some embodiments, the blocking layer 160 of the light emitting device 100 may be located between the first electrode 131 and the organic layer 140.

As shown in FIGS. 2 and 3, when the active device 120 applies a specific voltage to the first electrode 131, the organic layer 140, and the second electrode 132 of the light emitting device 100 a, a current will pass through the first electrode 131 and the organic layer 140 of the light emitting device 100 a. And the second electrode 132 so that the organic layer 140 is excited to emit light. However, since the light emitting device 100 is located at the non-display area 12 and is blocked by the barrier layer 160, when the active device 120 applies the same specific voltage to the first electrode 131, the organic layer 140, and the second electrode 132 of the light emitting device 100, the current is only Will pass through the first electrode 131, the organic layer 140, and the second electrode 132 of the light emitting device 100 in the portion of the display area 11, and will not pass through the first electrode 131, the organic layer 140, and the second electrode 132 of the light emitting device 100 in the non-display Part of district 12. Therefore, from a top perspective as shown in FIG. 1 and FIG. 2, only the portion of the organic layer 140 of the light emitting device 100 located in the display area 11 will emit light, and the portion of the organic layer 140 located in the non-display area 12 will not emit light. As shown in FIG. 2, the light-emitting device 100 located at the boundary between the display area 11 and the non-display area 12 will correspond to the shape of the edge of the display area 11 and a part (the portion located in the non-display area 12) will not emit light. When displaying an image, the edges of the image will not appear jagged.

In this embodiment, the barrier layer 160 is made of an insulating material. For example, the barrier layer 160 may include silicon oxide (SiOx), and the thickness of the barrier layer 160 may be between one nanometer and one thousand nanometers, but is not limited thereto. Due to the relationship of the barrier layer 160, the second electrode 132 covering the barrier layer 160 may be raised due to the existence of the barrier layer 160. However, in practical applications, since the thicknesses of the first electrode 131, the organic layer 140, the second electrode 132, and the barrier layer 160 are relatively thin, the display panel 10 as a whole still has a flat surface.

As shown in FIG. 3, in this embodiment, the organic layer 140 includes an emissive layer (EML) 141 and an auxiliary layer 142. The light emitting layer 141 can be excited to emit light, and the auxiliary layer 142 is used to assist the conduction of the first layer. The electrode 131 and the second electrode 132 enable the active device 120 to apply the opposite Lower voltages to the first electrode 131, the organic layer 140, and the second electrode 132 of the light-emitting devices 100 and 100a cause the light-emitting layer 141 to emit light. In other words, the auxiliary layer 142 can reduce the energy level difference between the first electrode 131 / the second electrode 132 and the light-emitting layer 141, and make it easier for holes / electrons to be injected into the light-emitting layer from the first electrode 131 / the second electrode 132. 141, causing the light emitting layer 141 to emit light.

In this embodiment, the barrier layer 160 of the light-emitting device 100 is located between the second electrode 132 and the auxiliary layer 142 to prevent holes / electrons from being injected into the light-emitting layer 141 from the first electrode 131 / the second electrode 132. In some embodiments, the blocking layer 160 of the light emitting device 100 may be located in the auxiliary layer 142. In some embodiments, the blocking layer 160 of the light emitting device 100 may be located between the first electrode 131 and the auxiliary layer 142. In some embodiments, the blocking layer 160 of the light emitting device 100 may be located between the light emitting layer 141 and the auxiliary layer 142.

As shown in FIG. 3, in this embodiment, the auxiliary layer 142 includes a first transmission layer 1421 and a second transmission layer 1422, and the light emitting layer 141 is located between the first transmission layer 1421 and the second transmission layer 1422. For example, the first transport layer 1421 may be a hole transport layer (HTL), and the second transport layer 1422 may be an electron transport layer (ETL), and the first electrode 131 is an anode. The second electrode 132 is a cathode, but is not limited thereto. The first transmission layer 1421 can reduce the energy level difference between the first electrode 131 and the light-emitting layer 141, and makes it easier for holes to be injected into the light-emitting layer 141 from the first electrode 131. The second transmission layer 1422 can reduce the second electrode 132 to The energy level difference between the light emitting layers 141 makes it easier for electrons to be injected into the light emitting layer 141 from the second electrode 132.

As shown in FIG. 3, in this embodiment, the active device 120 includes a first conductor layer 121, a first insulation layer 122, a channel layer 123, a second conductor layer 124, and a second insulation layer 125. A first conductor layer 121 is formed on the substrate 110 and is patterned to form a gate G, and a first insulating layer 122 is formed on the substrate 110 and the first conductive layer 121. The channel layer 123 is formed on the first insulating layer 122, and the channel layer 123 is made of a semiconductor material, for example. The second conductive layer 124 is formed on the channel layer 123 and is patterned to form a source S and a drain D, and a second insulating layer 125 is formed on the first insulating layer 122 and the second conductive layer 124. The first electrode 131 passes through the second insulating layer 125 and is connected to the corresponding drain electrode D.

In this embodiment, the light emitting layer 141 of each light emitting device 100, 100a may be a red light emitting layer (REML), a green light emitting layer (GEML), and a blue light emitting layer (BEML), respectively. The light emitting devices 100 and 100a having a red light emitting layer can emit red light, the light emitting devices 100 and 100a having a green light emitting layer can emit green light and the light emitting devices 100 and 100a having a blue light emitting layer can emit blue light.

Please refer to FIGS. 4 and 5. FIG. 4 is a schematic cross-sectional view of a light emitting device 100 and 100 a according to a second embodiment of the present invention, and FIG. 5 is a schematic cross-sectional view of a light emitting device 100 and 100 a according to a third embodiment of the present invention. The difference between the light-emitting devices 100 and 100 a of FIGS. 4 and 3 is that the barrier layer 160 of the light-emitting device 100 of FIG. 4 is located between the second transmission layer 1422 and the light-emitting layer 141. The difference between the light-emitting devices 100 and 100a of FIG. 5 and FIG. 3 is that the barrier layer 160 of the light-emitting device 100 of FIG. 5 is located between the first transmission layer 1421 and the first electrode 131. In the light emitting device 100 of FIG. 4, the portion of the organic layer 140 located in the non-display area 12 by the barrier layer 160 can not emit light by the barrier layer 160.

Please refer to FIG. 6, which is a schematic cross-sectional view of a light emitting device 100 and 100 a according to a fourth embodiment of the present invention. The difference between the light emitting devices 100 and 100a of FIG. 6 and FIG. 3 is that the first transmission layer 1421 of each light emitting device 100 and 100a of FIG. 6 includes a hole injection layer (HIL) HIL and a hole transmission layer HTL. The second transmission layer 1422 includes an electron injection layer (EIL) EIL and an electron transmission layer ETL. As shown in Figure 6, in In this embodiment, the light emitting layer 141 is located between the hole transport layer HTL and the electron transport layer ETL, the hole injection layer HIL is positioned between the first electrode 131 and the hole transport layer HTL, and the electron injection layer EIL is positioned at the second electrode 132 and the electron transport layer ETL. The hole injection layer HIL and the hole transmission layer HTL can reduce the energy level difference between the first electrode 131 and the light emitting layer 141, and make it easier for the hole to be injected into the light emitting layer 141 from the first electrode 131; and the electron injection layer EIL and electrons The transport layer ETL can reduce the energy level difference between the second electrode 132 and the light-emitting layer 141, and make it easier for electrons to be injected into the light-emitting layer 141 from the second electrode 132.

Please refer to FIG. 7, which is a schematic cross-sectional view of a light emitting device 100 and 100 a according to a fifth embodiment of the present invention. 7 is the same as the light emitting device 100a of FIG. 3, and the difference between the light emitting device 100 of FIG. 7 and FIG. 3 is that the light emitting device 100 of FIG. 7 does not have the barrier layer 160. In contrast, the light emitting device 100 of FIG. The thickness of the portion of the organic layer 140 located in the non-display area 12 can be reduced by reducing the thickness of the portion of the organic layer 140 located in the non-display area 12 to increase the energy level difference of the portion of the organic layer 140 located in the non-display area 12 of the light emitting device 100. This makes the portion of the organic layer 140 of the light emitting device 100 located in the display region 11 and the portion of the non-display region 12 have different energy level differences. In this case, when the active device 120 applies a specific voltage to the organic layer 140 of the light emitting device 100, a portion of the organic layer 140 of the light emitting device 100 located in the display area 11 emits light, but a portion of the organic layer 140 located in the non-display area 12 does not emit light. Its structure and principle are detailed below.

As shown in FIG. 7, in this embodiment, each of the light emitting devices 100 and 100 a includes a first electrode 131, a second electrode 132, and an organic layer 140, and the organic layer 140 is located between the first electrode 131 and the second electrode 132. The light-emitting device 100 is located at the boundary between the display area 11 and the non-display area 12. Therefore, the light-emitting device 100 can be correspondingly divided into the display area 11 and the non-display area 12. In addition, the thickness D1 of the organic layer 140 in the non-display area 12 of the light-emitting device 100 is smaller than that of the organic layer 140 in the display area 11. Thickness D2. Due to the different thicknesses, the energy level difference between the portion of the organic layer 140 located in the display area 11 and the portion of the non-display area 12 is different, and accordingly, the portion of the organic layer 140 located in the display area 11 and the portion of the non-display area 12 are excited and The voltage threshold required for light emission is also different. For example, if a specific voltage is greater than the voltage threshold required for the organic layer 140 of the light emitting device 100 located in the display area 11 to be excited to emit light, but smaller than the voltage threshold of the organic layer 140 of the light emitting device 100 located in the non-display area 12 to be excited and emit light. Required voltage threshold. In this case, when the active device 120 applies the specific voltage to the organic layer 140 of the light emitting device 100, only the portion of the organic layer 140 of the light emitting device 100 located in the display area 11 emits light, but does not cause A portion of the organic layer 140 located in the non-display area 12 emits light. Therefore, when the light-emitting device 100 shown in FIG. 7 is arranged at the edge of the display area 11, that is, at the boundary between the display area 11 and the non-display area 12, the light-emitting device 100 may also correspond to the shape of the edge of the display area 11 without emitting light locally. When the image is displayed in the display area 11, the edges of the image will not appear jagged.

As shown in FIG. 7, in this embodiment, the organic layer 140 of each light-emitting device 100 and 100 a includes a light-emitting layer 141 and an auxiliary layer 142, and the thickness of the auxiliary layer 142 in the non-display region 12 of the light-emitting device 100 is smaller than that of the auxiliary layer 142. The thickness D1 of the organic layer 140 in the non-display region 12 of the light emitting device 100 is also smaller than the thickness D2 of the organic layer 140 in the display region 11. As mentioned above, since the auxiliary layer 142 can be used to reduce the energy level difference between the first electrode 131 / second electrode 132 and the light-emitting layer 141, holes / electrons can be more easily transferred from the first electrode at a relatively low voltage. The electrode 131 / the second electrode 132 is injected into the light emitting layer 141, and the light emitting layer 141 emits light. Therefore, the smaller the thickness of the auxiliary layer 142, the larger the energy level difference between the first electrode 131 / second electrode 132 and the light-emitting layer 141. Accordingly, the hole / electron needs to be at a relatively high voltage. The light emitting layer 141 can be injected from the first electrode 131 / the second electrode 132 only from below. With the difference in thickness of the auxiliary layer 142, when the active device 120 applies a specific voltage to the organic layer 140 of the light emitting device 100, only the light emitting device can be made. A portion of the light emitting layer 141 located at the display area 11 in 100 emits light, but a portion of the light emitting layer 141 located in the non-display area 12 does not emit light.

As shown in FIG. 7, in this embodiment, the auxiliary layer 142 includes a first transmission layer 1421 and a second transmission layer 1422, and the light emitting layer 141 is located between the first transmission layer 1421 and the second transmission layer 1422. For example, the first transport layer 1421 may be a hole transport layer HTL, and the second transport layer 1422 may be an electron transport layer ETL, and the first electrode 131 is an anode, and the second electrode 132 is a cathode, but is not limited thereto. . The first transmission layer 1421 can reduce the energy level difference between the first electrode 131 and the light-emitting layer 141, and makes it easier for holes to be injected into the light-emitting layer 141 from the first electrode 131. The second transmission layer 1422 can reduce the second electrode 132 to The energy level difference between the light emitting layers 141 makes it easier for electrons to be injected into the light emitting layer 141 from the second electrode 132. In some embodiments, at least one of the first transmission layer 1421 and the second transmission layer 1422 of the light emitting device 100 is not located in the non-display area 12, so as to improve the organic layer 140 of the light emitting device 100 located in the non-display area 12. Energy step difference.

As shown in FIG. 7, in this embodiment, the first transmission layer 1421 of the light emitting device 100 is located in the display area 11 and the non-display area 12, but the second transmission layer 1422 of the light emitting device 100 is located only in the display area 11 and not in the non-display area 11. Display area 12. In this case, compared to the display area 11, electrons need a larger voltage to be injected from the second electrode 132 into the light-emitting layer 141 of the light-emitting device 100 located in the non-display area 12. Since the second transmission layer 1422 of the light emitting device 100 is located only in the display area 11 and not in the non-display area 12, when the active device 120 applies a specific voltage to the organic layer 140 of the light emitting device 100, only the light emitting layer 141 of the light emitting device 100 can be The portion located in the display area 11 emits light, but the portion of the light emitting layer 141 located in the non-display area 12 does not emit light.

Please refer to FIG. 8, which is a schematic cross-sectional view of a light emitting device 100 and 100 a according to a sixth embodiment of the present invention. The difference between the light emitting devices 100 and 100a of FIG. 8 and FIG. 7 is that the light emission of FIG. 8 The second transmission layer 1422 of the device 100 is located in the display area 11 and the non-display area 12, but the first transmission layer 1421 of the light-emitting device 100 is located only in the display area 11 and not in the non-display area 12. The light-emitting device 100 of FIG. 8 can also use the first transmission layer 1421 of the light-emitting device 100 to be located only in the display area 11 and not located in the non-display area 12 so that a portion of the light-emitting layer 141 located in the non-display area 12 does not emit light. In some embodiments, the first transmission layer 1421 and the second transmission layer 1422 of the light-emitting device 100 may both be located in the display area 11 but not in the non-display area 12.

Please refer to FIG. 9, which is a schematic cross-sectional view of a light emitting device 100 and 100 a according to a seventh embodiment of the present invention. The difference between the light emitting devices 100 and 100a of FIG. 9 and FIG. 7 is that the first transmission layer 1421 of each light emitting device 100 and 100a of FIG. 9 includes a hole injection layer HIL and a hole transmission layer HTL, and the second transmission layer 1422 includes Electron injection layer EIL and electron transport layer ETL. As shown in FIG. 9, in this embodiment, the light emitting layer 141 is located between the hole transport layer HTL and the electron transport layer ETL, the hole injection layer HIL is located between the first electrode 131 and the hole transport layer HTL, and the electrons The injection layer EIL is located between the second electrode 132 and the electron transport layer ETL. The hole injection layer HIL and the hole transmission layer HTL can reduce the energy level difference between the first electrode 131 and the light emitting layer 141, and make it easier for the hole to be injected into the light emitting layer 141 from the first electrode 131; and the electron injection layer EIL and electrons The transport layer ETL can reduce the energy level difference between the second electrode 132 and the light-emitting layer 141, and make it easier for electrons to be injected into the light-emitting layer 141 from the second electrode 132.

As shown in FIG. 9, in this embodiment, the thickness of the first transmission layer 1421 of the light-emitting device 100 in the display area 11 is the same as that of the non-display area 12, but the thickness of the second transmission layer 1422 of the light-emitting device 100 in the non-display area 12 The thickness D1 is smaller than the thickness D2 of the second transmission layer 1422 in the display area 11. Therefore, when the active device 120 applies a specific voltage to the organic layer 140 of the light-emitting device 100, only the portion of the light-emitting layer 141 of the light-emitting device 100 located in the display area 11 can emit light, but the light-emitting layer 141 will not be caused. A portion of the non-display area 12 emits light. In some embodiments, the thickness of the second transmission layer 1422 of the light-emitting device 100 in the display area 11 and the non-display area 12 is the same, but the thickness of the first transmission layer 1421 of the light-emitting device 100 in the non-display area 12 is smaller than that of the first transmission layer. 1421 is the thickness of the display area 11. In some embodiments, the thicknesses of the first transmission layer 1421 and the second transmission layer 1422 in the non-display area 12 of the light emitting device 100 are smaller than the thicknesses of the first transmission layer 1421 and the second transmission layer 1422 in the display area 11. In some embodiments, at least one of the hole injection layer HIL, the hole transport layer HTL, the electron injection layer EIL, and the electron transport layer ETL of the light emitting device 100 is not located in the non-display area 12.

As shown in FIG. 9, in this embodiment, the hole injection layer HIL, the hole transport layer HTL, and the electron transport layer ETL of the light emitting device 100 are located in the display area 11 and the non-display area 12, and the electron injection layer of the light emitting device 100 The EIL is only located in the display area 11 and not in the non-display area 12. Accordingly, the thickness D1 of the second transmission layer 1422 in the non-display area 12 of the light-emitting device 100 will be smaller than the thickness D2 of the second transmission layer 1422 in the display area 11. In some embodiments, the electron transport layer ETL of the light emitting device 100 may be located only in the display area 11 and not in the non-display area 12. In some embodiments, the hole transmission layer HTL of the light emitting device 100 may be located only in the display area 11 and not in the non-display area 12. In some embodiments, the hole injection layer HIL of the light emitting device 100 may be located only in the display area 11 and not in the non-display area 12. In some embodiments, only one of the four layers of the hole injection layer HIL, the hole transmission layer HTL, the electron injection layer EIL, and the electron transmission layer ETL of the light emitting device 100 is located in the display area 11 and the non-display area 12 simultaneously. , While the other three layers are located only in the display area 11 and not in the non-display area 12. In some embodiments, the four layers of the hole injection layer HIL, the hole transmission layer HTL, the electron injection layer EIL, and the electron transmission layer ETL of the light emitting device 100 are all located in the display area 11 and not in the non-display area 12.

Please refer to FIGS. 10 to 12, which is a display panel 10 according to an embodiment of the present invention A schematic top view of the evaporation process. FIG. 11 is a schematic partial cross-sectional view 1 of the display panel 10 of FIG. 10, and FIG. 12 is a schematic partial cross-sectional view 2 of the display panel 10 of FIG. 10. FIG. 10 to FIG. 12 are diagrams illustrating a method of forming the barrier layer 160 of FIG. 3. After the display panel 10 completes the preparation of the second transmission layer 1422 and before the preparation of the second electrode 132, an evaporation process of the barrier layer 160 is performed. As shown in FIG. 10 and FIG. 11, in this process, the display area 11 is covered with a mask MA, and the non-display area 12 is exposed outside the mask MA. Next, as shown in FIG. 12, an insulating material is vapor-deposited to the display panel 10 by a vapor deposition method (refer to the arrow in the figure), so that the barrier layers 160 and 160 a are formed on the mask MA and the second transmission of the non-display area 12. On layer 1422. After removing the mask MA and the barrier layer 160 a thereon, only the barrier layer 160 on the second transmission layer 1422 in the non-display area 12 remains. Then, the second electrode 132 is prepared to form the display panel 10 as shown in FIG. 3.

In some embodiments, if the barrier layer 160 is located between the light-emitting layer 141 and the second transmission layer 1422 (as shown in FIG. 4), the second transmission layer may be performed after the display panel 10 finishes preparing the light-emitting layer 141. Before the preparation of 1422, the evaporation process of the barrier layer 160 is performed. In some embodiments, if the barrier layer 160 is located between the first electrode 131 and the first transmission layer 1421 (as shown in FIG. 5), the display panel 10 may perform the first electrode 131 and the first Before the transmission layer 1421 is prepared, the above-mentioned vapor deposition process of the barrier layer 160 is performed.

Please refer to FIGS. 13 to 15. FIG. 13 is a schematic top view of the evaporation process of the display panel 10 according to another embodiment of the present invention. FIG. 14 is a schematic partial cross-sectional view 1 of the display panel 10 of FIG. 13. Partial cross-sectional view 2 of the display panel 10. 13 to 15 are diagrams illustrating a method of forming the second transmission layer 1422 of FIG. 7. As shown in FIGS. 13 and 14, after the display panel 10 finishes preparing the light-emitting layer 141, the non-display area 12 is covered with a mask MA, and the display area 11 is covered. It is exposed outside the mask MA. Next, as shown in FIG. 15, the second transmission layer 1422 is vapor-deposited to the display panel 10 by a vapor deposition method (refer to the arrow in the figure), so that the second transmission layer 1422 and 1422 a are formed on the mask MA and the display area 11. On the light-emitting layer 141. And after removing the mask MA and the second transmission layer 1422a thereon, only the second transmission layer 1422 located on the light-emitting layer 141 of the display area 11 remains. In addition, through existing processes such as exposure, etching, and deposition, a pixel definition layer 150 may be formed between the first transmission layer 1421, the light-emitting layer 141, and the second transmission layer 1422 to define each pixel, and details are not described herein again. Then, the second electrode 132 is prepared to form the display panel 10 shown in FIG. 7.

In some embodiments, if the first transmission layer 1421 is located only in the display area 11 and not in the non-display area 12 (as shown in FIG. 8), after the display panel 10 completes the preparation of the first electrode 131, it can be shielded. The cover MA covers the non-display area 12 and performs the above-mentioned evaporation process to form the first transmission layer 1421.

In summary, the light-emitting device according to the embodiments of the present invention can be disposed at the edge of the display area of the display panel, and the thickness of the non-display area through the barrier layer in the non-display area or through the organic layer is smaller than that of the organic layer. The thickness of the display area is designed so that the light-emitting devices arranged at the edges of the display area can partially emit light and not emit light at the same time. The junction between the light emission and non-light emission of the light-emitting device can correspond to the shape of the edge of the display area, thereby avoiding the appearance of the display area. The edges of the image are jagged and improve the user experience.

Although the technical content of the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art who makes some changes and retouches without departing from the spirit of the present invention should be covered by the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the appended patent application.

Claims (6)

A light emitting device includes: a first electrode and a second electrode; an organic layer located between the first electrode and the second electrode; and a barrier layer located in the organic layer, the second electrode and Between the organic layers or between the first electrode and the organic layer, the light emitting device is divided into a display area and a non-display area, and the barrier layer is located in the non-display area. The light-emitting device according to claim 1, wherein the organic layer includes a light-emitting layer and an auxiliary layer, and the barrier layer is located in the auxiliary layer, between the second electrode and the auxiliary layer, and the first electrode and Between the auxiliary layers or between the light emitting layer and the auxiliary layers. The light-emitting device according to claim 2, wherein the auxiliary layer includes a first transmission layer and a second transmission layer, and the light-emitting layer is located between the first transmission layer and the second transmission layer. The light emitting device according to claim 3, wherein the first transmission layer includes a hole injection layer and a hole transmission layer, the second transmission layer includes an electron injection layer and an electron transmission layer, and the light emitting layer is located in the Between the hole transport layer and the electron transport layer, the hole injection layer is located between the first electrode and the hole transport layer, and the electron injection layer is located between the second electrode and the electron transport layer. The light-emitting device according to claim 1, wherein the barrier layer includes silicon oxide. The light-emitting device according to claim 1, wherein the thickness of the barrier layer is between one nanometer and one thousand nanometers.