KR102395860B1 - Display device and method for manufacturing the same - Google Patents

Abstract

The present invention relates to a display device capable of preventing a decrease in an aperture ratio and occurrence of color mixture due to a process error between a black matrix and a color filter, and a method of manufacturing the same. A display device according to an embodiment of the present invention includes a plurality of color filters spaced apart from each other; an inorganic layer disposed to cover an upper portion of the plurality of color filters and a space between the plurality of color filters; and a black matrix disposed on the inorganic layer disposed in a space between the plurality of color filters.

Description

Display device and manufacturing method thereof

The present invention relates to a display device and a method for manufacturing the same.

As the information society develops, the demand for a display device for displaying an image is increasing in various forms. Accordingly, various display devices such as a liquid crystal display (LCD), a plasma display panel (PDP), and an organic light emitting display (OLED) have recently been used.

Among display devices, the organic light emitting display device is a self-emission type display device, which has superior viewing angle and contrast ratio compared to a liquid crystal display device (LCD). . In addition, the organic light emitting display device can be driven with a low DC voltage, has a fast response speed, and has advantages of low manufacturing cost.

The organic light emitting diode display includes pixels each including an organic light emitting diode, and a bank dividing the pixels to define the pixels. The bank may serve as a pixel defining layer. The organic light emitting diode includes an anode electrode, a hole transporting layer, an organic light emitting layer, an electron transporting layer, and a cathode electrode. In this case, when a high potential voltage is applied to the anode electrode and a low potential voltage is applied to the cathode electrode, holes and electrons move to the organic light emitting layer through the hole transport layer and the electron transport layer, respectively, and combine with each other in the organic light emitting layer to emit light.

The organic light-emitting device may include red, green, and blue organic light-emitting devices emitting red, green, and blue light, or may include only white organic light-emitting devices emitting white light. When the organic light emitting device includes only the white organic light emitting device, red, green, and blue color filters for realizing red, green, and blue are required. Both the color filters and the black matrix partitioning the color filters are formed by a photo process. However, in this case, an aperture ratio decrease and color mixing may occur due to an error in the photo process.

1A to 1C are exemplary views in detail showing a decrease in the aperture ratio and generation of color mixing according to process errors of a black matrix, a color filter, and a bank. 1A to 1C, for convenience of explanation, an anode electrode AND, an organic light emitting layer OL, a cathode electrode CAT, a bank BANK, a black matrix BM, and first and second color filters CF1 , CF2).

FIG. 1A shows a case in which the bank BANK, the black matrix BM, and the first and second color filters CF1 and CF2 are properly formed without a process error, and FIG. 1B shows the bank BANK and the first color filter. When CF1 is skewed to the right, the black matrix BM and the second color filter CF2 are skewed to the left, and the width w2 of the black matrix BM is wider than the originally intended width w1 shows In the case of FIG. 1B , the black matrix BM leaves the bank BANK and overlaps the light emitting part EA. Therefore, the aperture ratio of the light emitting part EA may be reduced.

1C shows the bank BANK, the black matrix BM, and the first color filter CF1 skewed to the right, the second color filter CF2 being skewed to the left, and the width w3 of the black matrix BM. This shows a case where it is formed narrower than the originally intended width w1. In the case of FIG. 1C , the black matrix BM does not cover the area where the first and second color filters CF1 and CF2 overlap. Therefore, color mixing may occur by the light L passing through the area where the first and second color filters CF1 and CF2 overlap.

That is, the aperture ratio of the light emitting part EA may decrease or color mixture may occur depending on a process error between the black matrix BM and the color filters CF1 and CF2 .

An object of the present invention is to provide a display device capable of preventing a decrease in aperture ratio and occurrence of color mixture due to process errors between a black matrix and a color filter, and a method of manufacturing the same.

A display device according to an embodiment of the present invention includes a plurality of color filters spaced apart from each other; an inorganic layer disposed to cover an upper portion of the plurality of color filters and a space between the plurality of color filters; and a black matrix disposed on the inorganic layer disposed in a space between the plurality of color filters.

In the embodiment of the present invention, since the black matrix is formed between the first to third color filters and the transparent organic layer, the possibility that the black matrix is formed to overlap the light emitting units is small, and the first to third color filters are There is little possibility of overlapping each other. Accordingly, according to the embodiment of the present invention, it is possible to prevent a decrease in the aperture ratio of the light emitting part and occurrence of color mixture due to a process error between the black matrix and the color filter.

In addition, in the embodiment of the present invention, since the black matrix is formed between the first to third color filters and the transparent organic layer, the black matrix is formed to be flat with the first to third color filters and the inorganic layer on the transparent organic layer. can be formed Accordingly, in the embodiment of the present invention, it is not necessary to form an overcoat layer for flattening the level difference between the color filters on the black matrix and the inorganic layer.

In addition, in the embodiment of the present invention, since the first and third color filters are formed between the second color filters, the first to third color filters can be partitioned without a black matrix, and the first to third color filters are less likely to be formed overlapping each other. Accordingly, according to the embodiment of the present invention, it is possible to prevent a decrease in the aperture ratio of the light emitting part and occurrence of color mixture due to a process error between the black matrix and the color filter.

Also, since the first and third color filters are formed between the second color filters according to the embodiment of the present invention, the first and third color filters can be formed to be flat with the inorganic film on the second color filters. . Accordingly, in the embodiment of the present invention, it is not necessary to form an overcoat layer for flattening the step difference between the first and third color filters and the inorganic layer.

In addition, according to an embodiment of the present invention, since the first to third color filters and the transparent organic layer include scattering particles, light from the light emitting units may be diffused and output. As a result, the embodiment of the present invention can prevent the black matrix from being visually recognized in the form of a grid.

Furthermore, in the embodiment of the present invention, since the black matrix between the color filters is formed as a reflective metal layer, light traveling to the black matrix can be totally reflected and emitted, so that the light efficiency is improved compared to when the black matrix is formed of a light absorbing material. can be improved

1A to 1C are exemplary views showing a decrease in the aperture ratio and generation of color mixing according to design errors of a black matrix, a color filter, and a bank.
2 is a perspective view illustrating a display device according to an embodiment of the present invention.
3 is a plan view illustrating a first substrate, a gate driver, a source drive IC, a flexible film, a circuit board, and a timing controller of FIG. 2 .
4 is a plan view illustrating an example of pixels of a display area.
5 is a cross-sectional view illustrating an example of line I-I' of FIG. 4 .
6 is a flowchart illustrating a method of manufacturing a display device according to an exemplary embodiment.
7A to 7G are cross-sectional views taken along line I-I' for describing a method of manufacturing a display device according to an exemplary embodiment of the present invention.
8 is a cross-sectional view illustrating another example of line I-I' of FIG. 4 .
9 is a cross-sectional view illustrating another example of line I-I' of FIG. 4 .
10A to 10C are cross-sectional views illustrating other structures in which a color filter including scattering particles is provided.
11 is a plan view illustrating another example of pixels in a display area.
12 is a cross-sectional view illustrating an example of II-II′ of FIG. 11 .
13 is a flowchart illustrating a method of manufacturing a display device according to another exemplary embodiment.
14A to 14F are cross-sectional views taken along line II-II' for explaining a method of manufacturing a display device according to another exemplary embodiment.
15 is a cross-sectional view illustrating another example of II-II′ of FIG. 11 .
16 is a cross-sectional view illustrating another example of II-II′ of FIG. 11 .
17 is a flowchart illustrating a method of manufacturing a display device according to another exemplary embodiment.
18A to 18H are cross-sectional views taken along line II-II' for explaining a method of manufacturing a display device according to another exemplary embodiment of the present invention.

Advantages and features of the present invention, and a method for achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, and only these embodiments allow the disclosure of the present invention to be complete, and those of ordinary skill in the art to which the present invention pertains. It is provided to fully inform the person of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are exemplary, and thus the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted.

When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless otherwise explicitly stated.

In interpreting the components, it is construed as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between two parts unless 'directly' is used.

In the case of a description of a temporal relationship, for example, 'immediately' or 'directly' when a temporal relationship is described with 'after', 'following', 'after', 'before', etc. It may include cases that are not continuous unless this is used.

Although the first, second, etc. are used to describe various elements, these elements are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

"X-axis direction", "Y-axis direction", and "Z-axis direction" should not be interpreted only as a geometric relationship in which the relationship between each other is vertical, and is wider than within the scope where the configuration of the present invention can function functionally. It may mean having a direction.

The term “at least one” should be understood to include all possible combinations from one or more related items. For example, the meaning of “at least one of the first, second, and third items” means that each of the first, second, or third items as well as two of the first, second and third items It may mean a combination of all items that can be presented from more than one.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each embodiment may be independently implemented with respect to each other or implemented together in a related relationship. may be

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a perspective view illustrating a display device according to an embodiment of the present invention. 3 is a plan view illustrating a first substrate, a gate driver, a source drive IC, a flexible film, a circuit board, and a timing controller of FIG. 2 . Hereinafter, it has been mainly described that the display device according to an embodiment of the present invention is an organic light emitting display device, but the present invention is not limited thereto. That is, the display device according to an exemplary embodiment of the present invention includes any one of a liquid crystal display, a field emission display, and an electrophoresis display, as well as an organic light emitting display. It may be implemented as one.

2 and 3 , the display device 100 according to an embodiment of the present invention includes a display panel 110 , a gate driver 120 , and a source drive integrated circuit (hereinafter referred to as “IC”). 130 , a flexible film 140 , a circuit board 150 , and a timing controller 160 .

The display panel 110 includes a first substrate 111 and a second substrate 112 . The second substrate 112 may be an encapsulation substrate. The first substrate 111 may be a plastic film or a glass substrate. The second substrate 112 may be a plastic film, a glass substrate, or an encapsulation film.

Gate lines, data lines, and pixels are formed on one surface of the first substrate 111 facing the second substrate 112 . The pixels are provided in a region defined by an intersecting structure of gate lines and data lines.

Each of the pixels may include an organic light emitting diode including a thin film transistor, a first electrode, an organic light emitting layer, and a second electrode. Each of the pixels supplies a predetermined current to the organic light emitting diode according to the data voltage of the data line when a gate signal is input from the gate line using a thin film transistor. Accordingly, the organic light emitting device of each of the pixels may emit light with a predetermined brightness according to a predetermined current. A description of the structure of each pixel will be described later with reference to FIGS. 4, 5, 8, 9, 11, 12, 15, and 16 .

As shown in FIG. 3 , the display panel 110 may be divided into a display area DA in which pixels are formed to display an image and a non-display area NDA in which an image is not displayed. Gate lines, data lines, and pixels may be formed in the display area DA. The gate driver 120 and pads may be formed in the non-display area NDA.

The gate driver 120 supplies gate signals to the gate lines according to a gate control signal input from the timing controller 160 . The gate driver 120 may be formed in the non-display area DA on one side or both sides of the display area DA of the display panel 110 by a gate driver in panel (GIP) method. Alternatively, the gate driver 120 is manufactured as a driving chip, mounted on a flexible film, and is a non-display area DA on one or both sides of the display area DA of the display panel 110 in a tape automated bonding (TAB) method. may be attached to

The source drive IC 130 receives digital video data and a source control signal from the timing controller 160 . The source drive IC 130 converts digital video data into analog data voltages according to a source control signal and supplies them to data lines. When the source drive IC 130 is manufactured as a driving chip, it may be mounted on the flexible film 140 in a chip on film (COF) or chip on plastic (COP) method.

Pads such as data pads may be formed in the non-display area NDA of the display panel 110 . Wires connecting the pads and the source drive IC 130 and wires connecting the pads and the wires of the circuit board 150 may be formed on the flexible film 140 . The flexible film 140 is attached on the pads using an anisotropic conducting film, whereby the pads and the wirings of the flexible film 140 can be connected.

The circuit board 150 may be attached to the flexible films 140 . A plurality of circuits implemented with driving chips may be mounted on the circuit board 150 . For example, the timing controller 160 may be mounted on the circuit board 150 . The circuit board 150 may be a printed circuit board or a flexible printed circuit board.

The timing controller 160 receives digital video data and a timing signal from an external system board through a cable of the circuit board 150 . The timing controller 60 generates a gate control signal for controlling the operation timing of the gate driver 120 and a source control signal for controlling the source driver ICs 130 based on the timing signal. The timing controller 160 supplies the gate control signal to the gate driver 120 and supplies the source control signal to the source drive ICs 130 .

4 is a plan view illustrating an example of pixels of a display area. In FIG. 4 , only the light emitting units RE, GE, BE, and WE of the pixels, color filters RF, GF, and BF, the transparent organic layer WF, and the black matrix BM are illustrated for convenience of explanation.

Referring to FIG. 4 , in each of the light emitting units RE, GE, BE, and WE, a first electrode corresponding to an anode electrode, an organic light emitting layer, and a second electrode corresponding to a cathode electrode are sequentially stacked so that the It represents a region where holes and electrons from the second electrode are combined with each other in the organic light emitting layer to emit light.

The organic light emitting layer of the light emitting units RE, GE, BE, and WE is formed as a common layer on the light emitting units RE, GE, BE, and WE to emit white light. The first color filter RF is disposed to correspond to the red light emitting part RE, the second color filter GF is disposed to correspond to the green light emitting part GE, and the third color filter BF is to emit blue light. It may be disposed to correspond to the part BE. Also, the transparent organic layer WF may be disposed to correspond to the white light emitting part WE. For this reason, the red light emitting part RE emits red light by the first color filter RF, the green light emitting part GE emits green light by the second color filter GF, and the blue light emitting part (BE) may emit blue light by the third color filter CF. Also, since the white light emitting part WE overlaps the transparent organic layer WF without a color filter, white light may be emitted.

4 , a red sub-pixel including a red light-emitting part RE, a green sub-pixel including a green light-emitting part GE, a blue sub-pixel including a blue light-emitting part BE, and a white light-emitting part WE are shown in FIG. The included white sub-pixel may be defined as one unit pixel. However, embodiments of the present invention are not limited thereto, and the white sub-pixel may be omitted. In this case, the red sub-pixel, the green sub-pixel, and the blue sub-pixel may be defined as one unit pixel.

The black matrix BM partitions the color filters RF, GF, and BF from the transparent organic layer WF. To this end, the black matrix BM may be disposed between the color filters RF, GF, and BF and the transparent organic layer WF.

5 is a cross-sectional view illustrating an example of line I-I' of FIG. 4 .

Referring to FIG. 5 , a buffer layer is formed on one surface of the first substrate 111 facing the second substrate 112 . The buffer layer is formed on one surface of the first substrate 111 to protect the thin film transistors 220 and the organic light emitting devices 260 from moisture penetrating through the first substrate 111 which is vulnerable to moisture permeation. The buffer layer may be formed of a plurality of inorganic layers alternately stacked. For example, the buffer layer may be formed as a multilayer in which one or more inorganic layers of a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), and SiON are alternately stacked. The buffer layer may be omitted.

A thin film transistor 210 is formed on the buffer layer. The thin film transistor 210 includes an active layer 211 , a gate electrode 212 , a source electrode 213 , and a drain electrode 214 . 5 illustrates that the thin film transistor 210 is formed in a top gate (top gate) method in which the gate electrode 212 is positioned on the active layer 211 , but it should be noted that the present invention is not limited thereto. That is, the thin film transistors 210 have a lower gate (bottom gate) method in which the gate electrode 212 is positioned under the active layer 211 or the gate electrode 212 is positioned above and below the active layer 211 . It may be formed in a double gate method in which all of them are located.

An active layer 211 is formed on the buffer layer. The active layer 211 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material. A light blocking layer for blocking external light incident to the active layer 211 may be formed between the buffer layer and the active layer 211 .

A gate insulating layer 220 may be formed on the active layer 211 . The gate insulating layer 220 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

A gate electrode 212 and a gate line may be formed on the gate insulating layer 220 . The gate electrode 212 and the gate line may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be formed as a single layer or multiple layers made of one or an alloy thereof.

An interlayer insulating layer 230 may be formed on the gate electrode 212 and the gate line. The interlayer insulating layer 230 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

A source electrode 213 , a drain electrode 214 , and a data line may be formed on the interlayer insulating layer 230 . Each of the source electrode 213 and the drain electrode 214 may be connected to the active layer 211 through a contact hole penetrating the gate insulating layer 220 and the interlayer insulating layer 230 . The source electrode 213 , the drain electrode 214 , and the data line are formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd). and copper (Cu) or an alloy thereof may be formed as a single layer or multiple layers.

A protective layer 240 for insulating the thin film transistor 220 may be formed on the source electrode 223 , the drain electrode 224 , and the data line. The passivation layer 240 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

A planarization layer 250 for flattening a step caused by the thin film transistor 210 may be formed on the passivation layer 240 . The planarization film 250 may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. there is.

An organic light emitting diode 260 and a bank 270 are formed on the planarization layer 250 . The organic light emitting device 260 includes a first electrode 261 , an organic light emitting layer 262 , and a second electrode 263 . The first electrode 261 may be an anode electrode, and the second electrode 263 may be a cathode electrode.

The first electrode 261 may be formed on the planarization layer 250 . The first electrode 261 is connected to the source electrode 223 of the thin film transistor 210 through a contact hole penetrating the passivation layer 240 and the planarization layer 250 . The first electrode 261 has a stacked structure of aluminum and titanium (Ti/Al/Ti), a stacked structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO/APC). /ITO) may be formed of a high reflectance metal material. The APC alloy is an alloy of silver (Ag), palladium (Pd), and copper (Cu).

The bank 270 may be formed to cover the edge of the first electrode 261 on the planarization layer 250 to partition the light emitting parts RE, GE, BE, and WE. That is, the bank 270 serves to define the light emitting unit. In addition, since the region where the bank 270 is formed does not emit light, it may be defined as a non-emission portion. The bank 270 may be formed of an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. .

An organic light emitting layer 262 is formed on the first electrode 261 and the bank 270 . The organic light emitting layer 262 is a common layer commonly formed in the light emitting units RE, GE, BE, and WE, and may be a white light emitting layer that emits white light. In this case, the organic light emitting layer 262 may be formed in a tandem structure of two or more stacks. Each of the stacks may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer.

In addition, a charge generating layer may be formed between the stacks. The charge generation layer may include an n-type charge generation layer disposed adjacent to the lower stack and a p-type charge generation layer formed on the n-type charge generation layer and disposed adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generating layer may be formed of an organic layer doped with an alkali metal such as Li, Na, K, or Cs, or an alkaline earth metal such as Mg, Sr, Ba, or Ra. The p-type charge generating layer may be formed by doping an organic material having hole transport ability with a dopant.

The second electrode 263 is formed on the organic light emitting layer 262 . The second electrode 263 is a common layer commonly formed in the light emitting units RE, GE, BE, and WE. The second electrode 263 is a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO capable of transmitting light, or magnesium (Mg), silver (Ag), or magnesium (Mg) and silver (Ag). It may be formed of a semi-transmissive conductive material such as an alloy of A capping layer may be formed on the second electrode 263 .

An encapsulation film 280 is formed on the second electrode 263 . The encapsulation film 280 serves to prevent oxygen or moisture from penetrating into the organic light emitting layer 262 and the second electrode 263 . To this end, the encapsulation layer 280 may include at least one inorganic layer and at least one organic layer.

For example, the encapsulation layer 290 may include a first inorganic layer 281 , an organic layer 282 , and a second inorganic layer 283 . In this case, the first inorganic layer 281 is formed to cover the second electrode 263 . The organic layer 282 is formed to cover the first inorganic layer 281 . The organic layer 282 is preferably formed to have a sufficient thickness to prevent particles from penetrating the first inorganic layer 281 and being input to the organic light emitting layer 262 and the second electrode 263 . The second inorganic layer 283 is formed to cover the organic layer 282 .

Each of the first and second inorganic layers 281 and 283 may be formed of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, or titanium oxide. The organic layer 282 may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

The first to third color filters 291 , 292 , and 293 and the transparent organic layer 294 are disposed on the encapsulation layer 290 . When the first to third color filters 291 , 292 , 293 are directly formed on the encapsulation film 290 , there is no need to align the first substrate 111 and the second substrate 112 at the time of bonding, There is no need for a separate adhesive layer. The first to third color filters 291 , 292 , 293 and the transparent organic layer 294 may be disposed to be spaced apart from each other by a predetermined distance.

The first color filter 291 is a red color filter disposed to correspond to the red light emitting part RE in FIG. 5 , and the second color filter 292 is a green color filter disposed to correspond to the green light emitting part GE. , the third color filter 293 may be a blue color filter disposed to correspond to the blue light emitting part BE. The transparent organic layer 294 may be disposed to correspond to the white light emitting part WE.

The first color filter 291 is formed of an organic layer including a red pigment, the second color filter 292 is formed of an organic layer including a green pigment, and the third color filter 293 includes a blue pigment. It may be formed of an organic film. The transparent organic layer 294 may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

An inorganic layer 310 is formed on the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 . That is, as shown in FIG. 5 , the inorganic layer 310 includes first to third color filters 291 , 292 , 293 , a transparent organic layer 294 , and first to third color filters 291 , 292 , 293 . ) and the transparent organic layer 294 to cover the space. The inorganic film 310 is formed of a transparent metal material (TCO, Transparent Conductive Material) such as ITO and IZO, or a silicon oxide film (SiO _x ), a silicon nitride film (SiN _x ), a silicon oxynitride (SiON), an aluminum oxide film ( Al ₂ O ₃ ) or a multilayer thereof.

The black matrix 300 may be formed on the inorganic layer 310 between the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 . The black matrix 300 may be formed of an organic layer including a black pigment.

The black matrix BM may be filled between the first to third color filters 291 , 292 , and 293 and the transparent organic layer 294 . Since the black matrix 300 is formed by dry etching, the thickness D1 of the black matrix 300 may be thinner than the thickness D2 of each of the first to third color filters 291 , 292 , and 293 . Since the black matrix 300 is formed in the non-emissive part rather than the light emitting part EA, it may be disposed to overlap the bank 270 .

As described above, since the black matrix BM is formed between the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 , the process error of the black matrix BM is the first to third color filters 291 , 292 , and 293 and the transparent organic layer 294 are determined by process errors. That is, in the prior art, both the process error of the black matrix and the process error of the color filter should be considered when forming the black matrix and the color filter. However, in the embodiment of the present invention, the formation position of the black matrix is determined by the color filter, Only process errors need to be taken into account.

In addition, in the embodiment of the present invention, since the black matrix BM is formed between the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 , the black matrix BM is formed from the light emitting units. (RE, GE, BE, WE) is less likely to overlap. Accordingly, the embodiment of the present invention can prevent a decrease in the aperture ratio of the light emitting part due to a process error between the black matrix and the color filter.

In addition, in the embodiment of the present invention, a space to be filled with the black matrix BM is required between the first to third color filters 291 , 292 , and 293 , so the first to third color filters 291 , 292 , 293) are unlikely to overlap each other. Therefore, according to the embodiment of the present invention, it is possible to prevent the occurrence of color mixture due to a process error between the black matrix and the color filter.

Furthermore, in the embodiment of the present invention, since the black matrix BM is formed between the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 , the black matrix 300 is formed in the first The to third color filters 291 , 292 , and 293 and the inorganic layer 310 on the transparent organic layer 294 may be formed to be flat. Accordingly, in the embodiment of the present invention, it is not necessary to form an overcoat layer for planarizing the level difference between the color filters on the black matrix 300 and the inorganic layer 310 .

The second substrate 112 may be attached on the first and third color filters 291 and 293 and the inorganic layer 310 . The second substrate 112 may be an encapsulation film.

6 is a flowchart illustrating a method of manufacturing a display device according to an exemplary embodiment. 7A to 7G are cross-sectional views taken along line I-I' for explaining a method of manufacturing a display device according to an exemplary embodiment of the present invention.

Since the cross-sectional views shown in FIGS. 7A to 7G relate to the above-described method of manufacturing the display device shown in FIG. 6 , the same reference numerals are assigned to the same components. Hereinafter, a method of manufacturing a display device according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 6 and 7A to 7G .

First, a thin film transistor 210 , an organic light emitting diode 260 , and an encapsulation film 270 are formed as shown in FIG. 7A .

Specifically, before forming the thin film transistor, a buffer layer may be formed on the first substrate 111 from moisture penetrating through the substrate 100 . The buffer layer is to protect the thin film transistor 210 and the organic light emitting device 260 from moisture penetrating through the first substrate 111, which is vulnerable to moisture permeation, and may be formed of a plurality of inorganic layers that are alternately stacked. For example, the buffer layer may be formed as a multilayer in which one or more inorganic layers of a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), and SiON are alternately stacked. The buffer layer may be formed using a chemical vapor deposition (CVD) method.

Then, the active layer 211 of the thin film transistor is formed on the buffer film. Specifically, an active metal layer is formed on the entire surface of the buffer film by sputtering or MOCVD (Metal Organic Chemical Vapor Deposition). Then, the active metal layer is patterned by a mask process using a photoresist pattern to form the active layer 211 . The active layer 211 may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material.

Then, a gate insulating layer 220 is formed on the active layer 211 . The gate insulating layer 220 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

Then, the gate electrode 212 of the thin film transistor 210 is formed on the gate insulating layer 220 . Specifically, the first metal layer is formed over the entire surface of the gate insulating film 220 by using a sputtering method, an MOCVD method, or the like. Next, the gate electrode 212 is formed by patterning the first metal layer by a mask process using a photoresist pattern. The gate electrode 212 may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or these It may be formed as a single layer or multiple layers made of an alloy of

Then, an interlayer insulating layer 230 is formed on the gate electrode 212 . The interlayer insulating layer 230 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

Then, contact holes for exposing the active layer 211 are formed through the gate insulating layer 220 and the interlayer insulating layer 230 .

Then, the source and drain electrodes 213 and 214 of the thin film transistor 210 are formed on the interlayer insulating layer 230 . Specifically, a second metal layer is formed on the entire surface of the interlayer insulating film 230 by sputtering or MOCVD. Then, the second metal layer is patterned by a mask process using a photoresist pattern to form source and drain electrodes 213 and 214 . Each of the source and drain electrodes 213 and 214 may be connected to the active layer 211 through a contact hole penetrating the gate insulating layer 220 and the interlayer insulating layer 230 . The source and drain electrodes 213 and 214 are formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be formed as a single layer or multiple layers made of any one or an alloy thereof.

Then, a passivation layer 240 is formed on the source and drain electrodes 213 and 214 of the thin film transistor 210 . The passivation layer 240 may be formed of an inorganic layer, for example, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof. The passivation layer 240 may be formed using a CVD method.

Then, a planarization layer 250 is formed on the passivation layer 240 to planarize a step caused by the thin film transistor 210 . The planarization film 250 may be formed of an organic film such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. there is.

Then, the first electrode 261 of the organic light emitting device 260 is formed on the planarization layer 250 . Specifically, a third metal layer is formed on the entire surface of the planarization film 280 by sputtering or MOCVD. Then, the third metal layer is patterned by a mask process using a photoresist pattern to form a first electrode 261 . The first electrode 261 may be connected to the source electrode 223 of the thin film transistor 220 through a contact hole penetrating the passivation layer 240 and the planarization layer 250 . The first electrode 261 has a stacked structure of aluminum and titanium (Ti/Al/Ti), a stacked structure of aluminum and ITO (ITO/Al/ITO), an APC alloy, and a stacked structure of an APC alloy and ITO (ITO/APC). /ITO) may be formed of a high reflectance metal material.

Then, a bank 270 is formed to cover the edge of the first electrode 261 on the planarization layer 250 to partition the light emitting parts RE, GE, BE, and WE. The bank 270 may be formed of an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. .

Then, the organic light emitting layer 262 is formed on the first electrode 261 and the bank 270 by a deposition process or a solution process. The organic light emitting layer 262 may be a common layer commonly formed in the light emitting units RE, GE, BE, and WE. In this case, the organic light emitting layer 262 may be formed of a white light emitting layer emitting white light.

When the organic light emitting layer 262 is a white light emitting layer, it may be formed in a tandem structure of two or more stacks. Each of the stacks may include a hole transporting layer, at least one light emitting layer, and an electron transporting layer.

In addition, a charge generating layer may be formed between the stacks. The charge generation layer may include an n-type charge generation layer disposed adjacent to the lower stack and a p-type charge generation layer formed on the n-type charge generation layer and disposed adjacent to the upper stack. The n-type charge generation layer injects electrons into the lower stack, and the p-type charge generation layer injects holes into the upper stack. The n-type charge generating layer may be formed of an organic layer doped with an alkali metal such as Li, Na, K, or Cs, or an alkaline earth metal such as Mg, Sr, Ba, or Ra. The p-type charge generating layer may be formed by doping an organic material having hole transport ability with a dopant.

Then, the second electrode 263 is formed on the organic light emitting layer 262 . The second electrode 263 may be a common layer commonly formed in the light emitting units RE, GE, BE, and WE. The second electrode 263 is a transparent metal material (TCO, Transparent Conductive Material) such as ITO or IZO capable of transmitting light, or magnesium (Mg), silver (Ag), or magnesium (Mg) and silver (Ag). It may be formed of a semi-transmissive conductive material such as an alloy of The second electrode 263 may be formed by a physical vapor deposition method such as a sputtering method. A capping layer may be formed on the second electrode 263 .

Then, an encapsulation layer 280 is formed on the second electrode 263 . The encapsulation film 280 serves to prevent oxygen or moisture from penetrating into the organic light emitting layer 262 and the second electrode 263 . To this end, the encapsulation layer 280 may include at least one inorganic layer and at least one organic layer.

For example, the encapsulation layer 280 may include a first inorganic layer 281 , an organic layer 282 , and a second inorganic layer 283 . In this case, the first inorganic layer 281 is formed to cover the second electrode 263 . The organic layer 282 is formed to cover the first inorganic layer. The organic layer 282 is preferably formed to have a sufficient thickness to prevent particles from penetrating the first inorganic layer and being input to the organic light emitting layer 262 and the second electrode 263 . The second inorganic layer 283 is formed to cover the organic layer.

Each of the first and second inorganic layers 281 and 283 may be formed of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, or titanium oxide. can The organic layer 282 may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. (S101 in FIG. 6)

Second, as shown in FIG. 7B , a first color filter 291 is formed on the encapsulation film 280 to correspond to the red light emitting part RE, and a second color filter 292 to correspond to the green light emitting part GE. ), and a third color filter 293 is formed to correspond to the blue light emitting part BE. The first color filter 291 may be a red color filter, the second color filter 292 may be a green color filter, and the third color filter 293 may be a blue color filter.

Specifically, an organic material including a red pigment is coated on the encapsulation film 280 , and a photo process is performed to form the first color filter 291 on the red light emitting part RE. Then, an organic material including a green pigment is coated on the encapsulation film 280 , and a photo process is performed to form a second color filter 292 on the green light emitting part GE. Then, an organic material including a blue pigment is coated on the encapsulation film 280 , and a photo process is performed to form a third color filter 293 on the blue light emitting part BE.

Although it has been exemplified that the red, green, and blue color filters are formed in the order above, the formation order of the color filters is not limited thereto. (S102 in FIG. 6)

Third, as shown in FIG. 7C , a transparent organic layer 294 is formed on the encapsulation layer 280 to correspond to the white light emitting part WE.

Specifically, a transparent organic material is coated on the encapsulation film 280 , and a photo process is performed to form the transparent organic film 294 on the white light emitting part WE. The transparent organic layer 294 may be formed of an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

Meanwhile, when the red sub-pixel, the green sub-pixel, and the blue sub-pixel are defined as one unit pixel, the white sub-pixel may be omitted. In this case, the step S103 of forming the transparent organic layer 294 may be omitted. In addition, although it has been exemplified that the transparent organic layer 294 is formed after the first to third color filters 291 , 292 , and 293 are formed in steps S102 and S103 , the present invention is not limited thereto. That is, after the transparent organic layer 294 is formed, the first to third color filters 291 , 292 , and 293 may be formed. Alternatively, some color filters among the first to third color filters 291 , 292 , and 293 are formed, and after the transparent organic layer 294 is formed, the first to third color filters 291 , 292 and 293 are formed. of the remaining color filters can be formed. For example, after the first color filter 291 is formed and the transparent organic layer 294 is formed, the second and third color filters 292 and 293 may be sequentially formed. (S103 in FIG. 6)

Fourth, as shown in FIG. 7D , an inorganic layer 310 is formed on the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 .

The inorganic layer 310 includes the first to third color filters 291 , 292 , and 293 , the transparent organic layer 294 , and the first to third color filters 291 , 292 , 293 and the transparent organic layer ( 294) is formed to cover the space between them. The inorganic layer 310 may be formed of a transparent conductive material (TCO) such as ITO or IZO, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof. When the inorganic layer 310 is formed of a transparent metal material, it may be formed by a sputtering method. When the inorganic layer 310 is formed of a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof, it may be formed by a CVD method. (S104 in FIG. 6)

Fifth, as shown in FIG. 7E , a black matrix layer 301 is formed to cover the inorganic layer 310 . The black matrix layer 301 may be an organic material including a black pigment. (S105 in FIG. 6)

Sixth, as shown in FIG. 7F , the black matrix layer 301 is etched using dry etching without a mask to form the black matrix 300 .

The material used for the dry etching may be a mixed gas of oxygen (O ₂ ) and carbon tetrafluorocarbon (CF ₄ ). For example, the weight ratio (wt%) of oxygen (O ₂ ) and carbon tetrafluorocarbon (CF ₄ ) may be 60:150, but is not limited thereto. When the organic layer and the inorganic layer are dry-etched using a mixed gas of oxygen (O ₂ ) and carbon tetrafluorocarbon (CF ₄ ), the etching ratio of the organic layer and the inorganic layer may be about 100:1 to 10:1. For example, when the inorganic layer 310 is formed of a transparent metal material (TCO), the etching ratio between the organic layer and the inorganic layer may be about 100:1. When the inorganic layer 310 is formed of a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof, the etching ratio of the organic layer and the inorganic layer may be approximately 10:1.

Accordingly, even when the black matrix layer 301 is dry-etched without a mask, the black matrix layer 301 corresponding to the organic material is mainly etched, and the inorganic layer 310 is hardly etched. That is, the first to third color filters 291 , 292 , and 293 and the transparent organic layer 294 may be protected without being etched by the inorganic layer 310 .

In addition, by adjusting the dry etching time, the black matrix 300 may be formed to be flat with the first to third color filters 291 , 292 , 293 and the inorganic layer 310 on the transparent organic layer 294 . . When the dry etching time is short, since the black matrix 300 may remain on the inorganic layer 310 , light from the light emitting units RE, GE, BE, and WE may be blocked by the black matrix 300 . there is. In addition, when the dry etching time is long, since the thickness of the black matrix 300 is reduced, the light blocking rate of the black matrix 300 may be reduced. That is, the black matrix 300 may not function properly. An appropriate drying time time can be predetermined through prior experimentation.

In addition, while the black matrix 300 is not protected by the inorganic layer 310 , the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 are formed by the inorganic layer 310 . Therefore, even when the dry etching time is adjusted, the thickness D1 of the black matrix 300 may be thinner than the thickness D2 of each of the first to third color filters 291 , 292 , and 293 .

In addition, the black matrix 300 is not formed by a photo process requiring a mask, but may be formed by dry etching without a mask, thereby reducing manufacturing cost and manufacturing time.

Also, since the black matrix 300 is not formed by a photo process, it may not include a photoinitiator.

In addition, since the black matrix 300 is formed in the non-emission part rather than the light emitting part EA, it may be disposed to overlap the bank 270 .

Furthermore, since the black matrix 300 fills a space between the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 , the first to third color filters 291 , 292 , 293) and the inorganic layer 310 on the transparent organic layer 294 may be formed to be flat. Accordingly, in the embodiment of the present invention, the second substrate 112 may be attached without forming an overcoat layer on the black matrix 300 and the inorganic layer 310 as shown in FIG. 7G . The second substrate 112 may be an encapsulation film. (S106 in Fig. 6)

Meanwhile, the process of forming the first to third color filters 291 , 292 , 293 , the transparent organic layer 294 , the inorganic layer 310 , and the black matrix 300 shown in FIGS. 7A to 7E is Since the process is formed on the encapsulation film 280 covering the organic light emitting device 260 , it may be a low temperature process of 100° C. or less to prevent the organic light emitting device 260 from being damaged.

Meanwhile, in FIGS. 6 and 7A to 7G , the first to third color filters 291 , 292 , and 293 , and the inorganic layer 310 are mainly described on the encapsulation layer 280 . However, the first to third color filters 291 , 292 , 293 , and the inorganic layer 310 may be formed on the second substrate 112 in substantially the same manner as described with reference to FIGS. 6 and 7A to 7G . may be In this case, a process of bonding the first substrate 111 and the second substrate 112 using the adhesive layer 320 may be added.

FIG. 8 is a cross-sectional view illustrating another example of line I-I' of FIG. 4 . 8 is a cross-sectional view in which the first to third color filters 291 , 292 , 293 , the transparent organic layer 294 , the black matrix 300 , and the inorganic layer 310 are not the encapsulation layer 280 . It is formed on the second substrate 112 and is substantially the same as described in connection with FIG. 5 , except that the first substrate 111 and the second substrate 112 are bonded to each other using the adhesive layer 320 .

In addition, in FIG. 8 , an adhesive layer 320 for bonding the first substrate 111 and the second substrate 112 is required. The adhesive layer 320 may be a transparent adhesive film or a transparent adhesive resin. Furthermore, in FIG. 8 , when the first substrate 111 and the second substrate 112 are bonded, the first substrate 111 and the second substrate 112 are aligned so that the black matrix 300 overlaps the bank 270 . There is a need.

In addition, the process of forming the first to third color filters 291 , 292 , 293 , the transparent organic layer 294 , the black matrix 300 , and the inorganic layer 310 on the second substrate 112 is The first to third color filters 291 , 292 , 293 , the transparent organic layer 294 , the black matrix 300 , and the inorganic layer 310 are formed on the second substrate 112 rather than the encapsulation layer 280 . It is substantially the same as steps S102 to S106 of FIG. 16 except for forming in .

9 is a cross-sectional view illustrating another example of line I-I' of FIG. 4 .

The cross-sectional view shown in FIG. 9 is substantially the same as that described in connection with FIG. 5 except that the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 include the scattering particles 330 . is the same as

The scattering particles 330 may be titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ). The size of the scattering particles 330 may be 0.05 μm to 1 μm. As the size of the scattering particles 330 increases, the transmittance of each of the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 may decrease, but the scattering degree may increase. Accordingly, the size of the scattering particles 330 may be predetermined in consideration of the transmittance and scattering degree of each of the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 .

On the other hand, a head mounted display (HMD) is a spectacle-type monitor device of virtual reality (VR) or augmented reality (Augmented Reality) that is worn in the form of glasses or a helmet and the focus is formed at a distance close to the user's eyes. , a high-resolution small organic light emitting display device is applied. According to an embodiment of the present invention, since the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 include the scattering particles 330 , the light emitting units RE, GE, BE, and WE are formed. Light can be diffused and output. As a result, the embodiment of the present invention can prevent the black matrix from being viewed in the form of a grid when the organic light emitting diode display is applied to a head mounted display.

10A to 10C are cross-sectional views illustrating other structures in which a color filter including scattering particles is provided.

FIG. 10A shows a structure in which color filters 291 , 292 , and 293 are disposed on the black matrix 300 . Referring to FIG. 10A , the light L emitted from the organic light emitting layer 262 of the red light emitting part RE is scattered by the scattering particles 330 of the first color filter 291 and the second color filter 292 . , the light may be scattered by the scattering particles 330 of the second color filter 292 and emitted to the upper portion of the second color filter 292 . That is, as light from the organic light emitting layer 262 of one light emitting unit travels to the color filter of the light emitting unit adjacent thereto, color mixing may occur.

10B shows a structure in which the scattering layer 340 including the scattering particles 330 is disposed on the color filters 291 , 292 , and 293 . Referring to FIG. 10B , light L emitted from the organic light emitting layer 262 of the red light emitting part RE passes through the first color filter 291 and is scattered by the scattering particles 330 of the scattering layer 340 . It may proceed to the green light emitting part GE, and may be scattered by the scattering particles 330 in the green light emitting part GE and emitted. That is, since the light from the organic light emitting layer 262 of one light emitting part travels to the adjacent light emitting part, blur may occur, and thus the visibility and sharpness of the image may be lowered.

In FIG. 10C , a scattering layer 340 including scattering particles 330 is disposed on the encapsulation film 280 , and a black matrix 300 and color filters 291 , 292 , 293 are disposed on the scattering layer 340 . The structure in which the are arranged is shown. Referring to FIG. 10C , the light L emitted from the organic light emitting layer 262 of the red light emitting part RE is scattered by the scattering particles 330 of the scattering layer 340 and proceeds to the green light emitting part GE, , may be scattered by the scattering particles 330 in the green light emitting part GE and pass through the second color filter 292 . That is, as light from the organic light emitting layer 262 of one light emitting unit travels to the color filter of the light emitting unit adjacent thereto, color mixing may occur.

In contrast, in the embodiment of the present invention, since the black matrix 300 is disposed between the first to third color filters 291 , 292 , 293 and the transparent organic layer 294 , as shown in FIG. 9 , any one light emitting unit (RE) It is possible to prevent the light of the organic light emitting device 260 from being scattered by the scattering particles 330 of any one color filter 291 and proceeding to the color filter of the light emitting unit adjacent thereto. That is, the embodiment of the present invention can prevent color mixing and blur from occurring.

11 is a plan view illustrating another example of pixels of a display area. In FIG. 11 , only the light emitting units RE, GE, BE, and color filters RF, GF, and BF of the pixels are illustrated for convenience of explanation.

11 , in each of the light emitting units RE, GE, and BE, a first electrode corresponding to an anode electrode, an organic light emitting layer, and a second electrode corresponding to a cathode electrode are sequentially stacked to form holes and It represents a region where electrons from the second electrode are combined with each other in the organic light emitting layer to emit light.

The organic light emitting layer of the light emitting units RE, GE, and BE is formed as a common layer on the light emitting units RE, GE, and BE to emit white light. The first color filter RF is disposed to correspond to the red light emitting part RE, the second color filter GF is disposed to correspond to the green light emitting part GE, and the third color filter BF is to emit blue light. It may be disposed to correspond to the part BE. For this reason, the red light emitting part RE emits red light by the first color filter RF, the green light emitting part GE emits green light by the second color filter GF, and the blue light emitting part (BE) may emit blue light by the third color filter BF. The red sub-pixel may include the red light-emitting part RE, the green sub-pixel may include the green light-emitting part GE, and the blue sub-pixel may include the blue light-emitting part BE.

An embodiment of the present invention forms other color filters between any one color filter. For example, as shown in FIG. 11 , a red sub-pixel is disposed between green sub-pixels in a k-th row (k is a positive integer), and a blue sub-pixel is disposed between green sub-pixels in a k+1th row. can That is, only red and green sub-pixels may be disposed in the k-th row, and green and blue sub-pixels may be disposed in the k+1-th row.

In addition, the red sub-pixel of the k-th row and the green sub-pixel of the k+1th row may be disposed adjacent to each other, and the green sub-pixel of the k-th row and the blue sub-pixel of the k+1th row may be disposed adjacent to each other. there is. That is, the green sub-pixel and the k+1th green sub-pixel in the k-th row may be arranged in a diagonal direction.

In the embodiment of the present invention, due to this arrangement, one red sub-pixel, two green sub-pixels, and one blue sub-pixel may be defined as one unit pixel.

Meanwhile, the embodiment of the present invention is not limited to the embodiment shown in FIG. 11 . That is, in the j-th column (j is a positive integer), the red sub-pixels may be disposed between the green sub-pixels, and in the j+1th row, the blue sub-pixels may be disposed between the green sub-pixels.

As described above, in the embodiment of the present invention, since the first and third color filters 291 and 293 are formed between the second color filters 292 , as shown in FIG. 11 , red, green, and blue colors are displayed. The first to third color filters 291 , 292 , and 293 may be partitioned from each other without a black matrix partitioning the filters RF, GF, and BF.

12 is a cross-sectional view illustrating an example of II-II′ of FIG. 11 .

The cross-sectional view shown in FIG. 12 is substantially the same as that described in connection with FIG. 5 except for the first to third color filters 291 , 292 , 293 , the inorganic layer 310 , and the second substrate 112 . Do.

Referring to FIG. 12 , first and third color filters 291 and 293 are disposed on the encapsulation film 290 . The first and third color filters 291 and 293 may be spaced apart from each other by a predetermined interval.

The first color filter 291 may be a red color filter disposed to correspond to the red light emitting part RE, and the third color filter 293 may be a blue color filter disposed to correspond to the blue light emitting part BE. The first color filter 291 may be formed of an organic layer including a red pigment, and the third color filter 293 may be formed of an organic layer including a blue pigment.

An inorganic layer 310 is formed on the first and third color filters 291 and 293 . That is, the inorganic layer 310 is formed to cover the space between the first and third color filters 291 and 293 as well as the first and third color filters 291 and 293 as shown in FIG. 12 . The inorganic layer 310 may be formed of a transparent conductive material (TCO) such as ITO or IZO, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof.

The second color filter 292 may be formed on the inorganic layer 310 between the first and third color filters 291 and 293 . The second color filter 292 may be a green color filter disposed to correspond to the green light emitting part GE. The second color filter 292 may be formed of an organic layer including a green pigment.

The second color filter 292 may be filled between the first and third color filters 291 and 293 . In addition, since the second color filter 292 is formed by dry etching, the thickness D3 of the second color filter 292 may be thinner than the thickness D4 of each of the first and third color filters 291 and 293. can

As described above, in the embodiment of the present invention, since the second color filter 292 is formed between the first and third color filters 291 and 293, the first to third The color filters 291 , 292 , and 293 may be partitioned. Accordingly, the embodiment of the present invention can prevent a decrease in the aperture ratio of the light emitting part due to a process error between the black matrix and the color filter.

In addition, since the second color filter 292 is formed between the first and third color filters 291 and 293 according to the embodiment of the present invention, the first to third color filters 291 , 292 , and 293 . There is little possibility that these are formed to overlap each other. Therefore, according to the embodiment of the present invention, it is possible to prevent the occurrence of color mixture due to a process error between the black matrix and the color filter.

Furthermore, in the embodiment of the present invention, since the second color filter 292 is formed between the first and third color filters 291 and 293, the first and third color filters 291 and 293 are first and secondarily formed. It may be formed to be flat with the inorganic layer 310 on the two color filters 292 . Accordingly, in the exemplary embodiment of the present invention, it is not necessary to form an overcoat layer for flattening the level difference between the color filters on the first and third color filters 291 and 293 and the inorganic layer 310 .

The second substrate 112 may be attached on the second color filter 292 and the inorganic layer 310 . The second substrate 112 may be an encapsulation film.

13 is a flowchart illustrating a method of manufacturing a display device according to another embodiment of the present invention. 14A to 14F are cross-sectional views taken along line II-II' for explaining a method of manufacturing a display device according to another exemplary embodiment.

Since the cross-sectional views shown in FIGS. 14A to 14F relate to the above-described method of manufacturing the display device shown in FIG. 12 , the same reference numerals are assigned to the same components. Hereinafter, a method of manufacturing a display device according to another exemplary embodiment of the present invention will be described in detail with reference to FIGS. 13 and 14A to 14F .

First, a thin film transistor 210 , an organic light emitting diode 260 , and an encapsulation film 270 are formed as shown in FIG. 14A . Since step S201 of FIG. 13 is substantially the same as step S101 of FIG. 6 , a description of step S201 of FIG. 13 will be omitted. (S201 in FIG. 13)

Second, as shown in FIG. 14B , a first color filter 291 is formed on the encapsulation film 280 to correspond to the red light-emitting parts RE, and a third color filter to correspond to the blue light-emitting parts BE. (293) is formed.

Specifically, an organic material including a red pigment is coated on the encapsulation film 280 , and a photo process is performed to form the first color filters 291 in the red light emitting units RE. The first color filter 291 may be a red color filter RF. In addition, an organic material including a blue pigment is coated on the encapsulation layer 280 , and a photo process is performed to form third color filters 293 on the blue light emitting parts BE. The third color filter 293 may be a blue color filter BF. (S202 in FIG. 13)

Third, as shown in FIG. 14C , an inorganic layer 310 is formed on the first and third color filters 291 and 293 .

The inorganic layer 310 is formed to cover the first and third color filters 291 and 293 and to cover a space between the first and third color filters 291 and 293 . The inorganic layer 310 may be formed of a transparent conductive material (TCO) such as ITO or IZO, a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof. When the inorganic layer 310 is formed of a transparent metal material, it may be formed by a sputtering method. When the inorganic layer 310 is formed of a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof, it may be formed by a CVD method. (S203 in FIG. 13)

Fourth, as shown in FIG. 14D , a second color filter layer 292a is formed to cover the inorganic layer 310 . The second color filter layer 292a may be an organic material including a green pigment. (S204 in FIG. 13)

Fifth, as shown in FIG. 14E , the second color filter layer 292a is etched using dry etching without a mask to form a second color filter 292 .

The material used for the dry etching may be a mixed gas of oxygen (O ₂ ) and carbon tetrafluorocarbon (CF ₄ ). For example, the weight ratio (wt%) of oxygen (O ₂ ) and carbon tetrafluorocarbon (CF ₄ ) may be 60:150, but is not limited thereto. When the organic layer and the inorganic layer are dry-etched using a mixed gas of oxygen (O ₂ ) and carbon tetrafluorocarbon (CF ₄ ), the etching ratio of the organic layer and the inorganic layer may be about 100:1 to 10:1. For example, when the inorganic layer 310 is formed of a transparent metal material (TCO), the etching ratio between the organic layer and the inorganic layer may be about 100:1. In addition, when the inorganic layer 310 is formed of a silicon oxide layer (SiO _x ), a silicon nitride layer (SiN _x ), or a multilayer thereof, the etching ratio of the organic layer and the inorganic layer may be approximately 10:1.

Accordingly, even when the second color filter layer 292a is dry-etched without a mask, the second color filter layer 292a corresponding to the organic material is mainly etched, and the inorganic layer 310 is hardly etched. That is, the first and third color filters 291 and 293 may be protected without being etched by the inorganic layer 310 .

Also, by adjusting the dry etching time, the second color filter layer 292a may be formed to be flat with the inorganic layer 310 on the first and third color filters 291 and 293 . When the dry etching time is short, since the second color filter 292 may remain on the inorganic layer 310 , color mixing may occur. Also, when the dry etching time is long, the thickness of the second color filter 292 is reduced, and thus the second color filter 292 may not function properly as a color filter. An appropriate drying time time can be predetermined through prior experimentation.

In addition, since the second color filter layer 292a is not protected by the inorganic layer 310 , while the first and third color filters 291 and 293 are protected by the inorganic layer 310 , the dry etching time is reduced. Even if adjusted, the thickness of each of the first and third color filters 291 and 293 may be thinner than the thickness of the second color filter 292 .

In addition, the second color filter layer 292a is not formed by a photo process requiring a mask, but may be formed by dry etching without a mask, thereby reducing manufacturing cost and manufacturing time.

Also, since the second color filter layer 292a is not formed by a photo process, a photoinitiator may not be included.

Furthermore, since the second color filter 292 is filled between the first and third color filters 291 and 293 , it is flat with the inorganic layer 310 on the first and third color filters 291 and 293 . can be formed. Accordingly, in the embodiment of the present invention, it is not necessary to form an overcoat layer on the second color filter 292 and the inorganic layer 310 to planarize the level difference between the color filters.

A second substrate 112 may be attached on the second color filter 292 and the inorganic layer 310 as shown in FIG. 14F . The second substrate 112 may be an encapsulation film. (S205 in FIG. 13)

15 is a cross-sectional view illustrating another example of II-II′ of FIG. 11 . 15 is a cross-sectional view in which the first to third color filters 291 , 292 , 293 , and the inorganic film 310 are formed on the second substrate 112 rather than the encapsulation film 280 , and the adhesive layer ( It is substantially the same as described in connection with FIG. 12 , except that the first substrate 111 and the second substrate 112 are bonded using the 320 .

In FIG. 15 , the second substrate 112 may be a glass substrate or a plastic film. In addition, in FIG. 15 , an adhesive layer 320 for bonding the first substrate 111 and the second substrate 112 is required. The adhesive layer 320 may be a transparent adhesive film or a transparent adhesive resin. Furthermore, in FIG. 15 , when the first substrate 111 and the second substrate 112 are bonded, the first to third color filters 291 , 292 , and 293 are red, green, and blue light emitting units RE, GE, and BE. ), it is necessary to align the first substrate 111 and the second substrate 112 to correspond to each other.

In addition, the process of forming the first to third color filters 291 , 292 , 293 and the inorganic layer 310 on the second substrate 112 includes the first to third color filters 291 , 292 , 293) and the inorganic layer 310 is substantially the same as steps S202 to S205 of FIG. 13 except that the inorganic layer 310 is formed on the second substrate 112 instead of the encapsulation layer 280 .

16 is a cross-sectional view illustrating another example of II-II′ of FIG. 11 .

The cross-sectional view shown in FIG. 16 is substantially the same as that described in connection with FIG. 5 except for the first to third color filters 291 , 292 , 293 , the black matrix 300 , and the second substrate 112 . Do.

Referring to FIG. 16 , first and third color filters 291 and 293 are disposed on the encapsulation film 290 . The first and third color filters 291 and 293 may be spaced apart from each other by a predetermined interval.

The first color filter 291 may be a red color filter disposed to correspond to the red light emitting part RE, and the third color filter 293 may be a blue color filter disposed to correspond to the blue light emitting part BE. The first color filter 291 may be formed of an organic layer including a red pigment, and the third color filter 293 may be formed of an organic layer including a blue pigment. Each of the first and third color filters 291 and 293 may include scattering particles 330 as shown in FIG. 9 , but the embodiment of the present invention is not limited thereto. That is, the scattering particles 330 may be omitted.

A second color filter 292 is formed between the first and third color filters 291 and 293 . The second color filter 292 may be a green color filter disposed to correspond to the green light emitting part GE. The second color filter 292 may be formed of an organic layer including a green pigment. The second color filter 292 may include scattering particles 330 as shown in FIG. 9 , but the embodiment of the present invention is not limited thereto. That is, the scattering particles 330 may be omitted.

In addition, since the second color filter 292 is formed by dry etching, the thickness D3 of the second color filter 292 may be thinner than the thickness D4 of each of the first and third color filters 291 and 293. can

A black matrix 300 is formed between the first and second color filters 291 and 292 and between the second and third color filters 292 and 293 . The black matrix 300 may be formed of aluminum (Al) or silver (Ag), which are metals with high reflectivity. In the embodiment of the present invention, by forming the black matrix 300 as a reflective metal layer, the light L traveling to the black matrix 300 can be totally reflected and emitted, so that the black matrix 300 is formed of a light absorbing material. It is possible to improve the light efficiency compared to the previous time.

Also, the black matrix 300 may include a tail 301 extending from a lower portion of the black matrix 300 . The tail 301 may be formed on the encapsulation film 280 and covered by the second color filter 292 .

The second substrate 112 may be attached on the second color filter 292 and the inorganic layer 310 . The second substrate 112 may be an encapsulation film.

17 is a flowchart illustrating a method of manufacturing a display device according to another exemplary embodiment. 18A to 18H are cross-sectional views taken along line II-II' for explaining a method of manufacturing a display device according to another exemplary embodiment.

First, the thin film transistor 210 , the organic light emitting device 260 , and the encapsulation film 270 are formed. Since step S301 of FIG. 17 is substantially the same as step S101 of FIG. 6 , a description of step S301 of FIG. 17 will be omitted. (S301 in FIG. 17)

Second, the first color filter 291 is formed on the encapsulation film 280 to correspond to the red light-emitting parts RE, and the third color filter 293 is formed to correspond to the blue light-emitting parts BE. to form Since step S302 of FIG. 17 is substantially the same as step S202 of FIG. 13, a description of step S302 of FIG. 17 is omitted (S302 of FIG. 17)

Third, as shown in FIG. 18A , the reflective metal layer 300a covering the encapsulation film 280 and the first and third color filters 291 and 293 is formed.

Specifically, the reflective metal layer 300a is formed to cover the first and third color filters 291 and 293 and to cover a space between the first and third color filters 291 and 293 . The reflective metal layer 300a may be formed of aluminum (Al) or silver (Ag), and may be formed by a sputtering method. (S303 in FIG. 17)

Fourth, as shown in FIG. 18B , a photoresist pattern PR is formed on the reflective metal layer 300a to overlap the first and third color filters 291 and 293 . The width W1 of the photoresist pattern PR may be wider than the width W2 of each of the first and third color filters 291 and 293 . (S304 in Fig. 17)

Fifth, as shown in FIG. 18C , the reflective metal layer 300a exposed without being covered by the photoresist pattern PR is wet-etched. Meanwhile, since the width of the photoresist pattern PR is formed to be wider than the width of each of the first and third color filters 291 and 293 , the reflective metal layer 300a may include the tail portion 301 after etching. there is.

Then, the photoresist pattern PR is removed as shown in FIG. 18D . (S305 in FIG. 17)

Sixth, as shown in FIG. 18E , a second color filter layer 292a is formed on the reflective metal layer 300a and the encapsulation film 280 not covered by the reflective metal layer 300a. The second color filter layer 292a may be an organic material including a green pigment. (S306 in FIG. 17)

Seventh, as shown in FIG. 18F , the second color filter layer 292a is etched using dry etching without a mask to form a second color filter 292 .

The material used for the dry etching may be a mixed gas of oxygen (O ₂ ) and carbon tetrafluorocarbon (CF ₄ ). For example, the weight ratio (wt%) of oxygen (O ₂ ) and carbon tetrafluorocarbon (CF ₄ ) may be 60:150, but is not limited thereto. When the organic film and the reflective metal layer 300a are dry-etched using a mixed gas of oxygen (O ₂ ) and carbon tetrafluorocarbon (CF ₄ ), the second color filter layer 292a corresponding to the organic material is mainly etched, and the reflection The metal layer 300a is hardly etched. That is, the first and third color filters 291 and 293 may be protected without being etched by the reflective metal layer 300a.

Also, by adjusting the dry etching time, the second color filter layer 292a may be formed to be flat with the reflective metal layer 300a on the first and third color filters 291 and 293 . When the dry etching time is short, the second color filter 292 may remain on the reflective metal layer 300a. Also, when the dry etching time is long, the thickness of the second color filter 292 is reduced, and thus the second color filter 292 may not function properly as a color filter. An appropriate drying time time can be predetermined through prior experimentation.

In addition, since the second color filter layer 292a is not protected by the reflective metal layer 300a, while the first and third color filters 291 and 293 are protected by the reflective metal layer 300a, dry etching time is reduced. Even if adjusted, the thickness of each of the first and third color filters 291 and 293 may be thinner than the thickness of the second color filter 292 .

In addition, the second color filter layer 292a is not formed by a photo process requiring a mask, but may be formed by dry etching without a mask, thereby reducing manufacturing cost and manufacturing time.

Also, since the second color filter layer 292a is not formed by a photo process, a photoinitiator may not be included.

Furthermore, since the second color filter 292 is filled between the first and third color filters 291 and 293 , it is flat with the reflective metal layer 300a on the first and third color filters 291 and 293 . can be formed. Accordingly, in the exemplary embodiment of the present invention, it is not necessary to form an overcoat layer on the second color filter 292 and the reflective metal layer 300a to planarize the level difference between the color filters. (S307 of FIG. 13)

Eighth, as shown in FIG. 18G , the reflective metal layer 300a on the first and third color filters 291 and 293 is etched.

Specifically, after a photoresist pattern is formed in an area except for the first and third color filters 291 and 293, the exposed reflective metal layer 300a not covered by the photoresist pattern is wet-etched. Then, the photoresist pattern is removed.

Then, the second substrate 112 may be attached on the first to third color filters 291 , 292 , and 293 as shown in FIG. 14F . The second substrate 112 may be an encapsulation film. (S308 in FIG. 13)

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100: display device 110: display panel
111: lower substrate 112: upper substrate
120: gate driver 130: source drive IC
140: flexible film 150: circuit board
160: timing controller 210: thin film transistor
211: active layer 212: gate electrode
213: source electrode 214: drain electrode
220: gate insulating film 230: interlayer insulating film
240: protective film 250: planarization film
260: organic light emitting device 261: first electrode
262: organic light emitting layer 263: second electrode
270: bank 280: encapsulation film
281: first inorganic film 282: organic film
283: second inorganic film 291: first color filter
292: second color filter 293: third color filter
294: transparent organic film 300: black matrix
310: inorganic film 320: adhesive layer

Claims (11)

an organic light emitting layer provided on the first substrate;
a plurality of color filters spaced apart from each other on the organic light emitting layer;
an inorganic layer disposed to cover an upper portion of the plurality of color filters and a space between the plurality of color filters; and
and a black matrix disposed on the inorganic layer disposed in a space between the plurality of color filters,
The inorganic film is provided to be in contact with upper surfaces of the color filters and lower surfaces of the black matrix,
An upper portion of the inorganic layer disposed on the plurality of color filters and an upper portion of the black matrix are flat. delete The method of claim 1,
The display device of claim 1, wherein the black matrix does not cover the inorganic layer disposed on the plurality of color filters. The method of claim 1,
a first electrode disposed under the organic light emitting layer on the first substrate;
a second electrode disposed on the organic light emitting layer; and
The display device further comprising an encapsulation film covering the second electrode. 5. The method of claim 4,
The plurality of color filters are disposed on the encapsulation film. 5. The method of claim 4,
The display device further comprising an adhesive layer disposed between the inorganic film and the encapsulation film. The method of claim 1,
The plurality of color filters includes scattering particles. The method of claim 1,
A thickness of the black matrix is smaller than a thickness of each of the plurality of color filters. 5. The method of claim 4,
The encapsulant is
a first inorganic film covering the second electrode;
an organic layer disposed on the first inorganic layer; and
and a second inorganic layer covering the organic layer. 10. The method of claim 9,
The inorganic layer is made of the same material as the first inorganic layer or the second inorganic layer. 10. The method of claim 9,
and the inorganic layer is made of a material different from that of the first inorganic layer or the second inorganic layer.

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