TWI671831B - Semiconductor component manufacturing method - Google Patents

Semiconductor component manufacturing method Download PDF

Info

Publication number
TWI671831B
TWI671831B TW105127758A TW105127758A TWI671831B TW I671831 B TWI671831 B TW I671831B TW 105127758 A TW105127758 A TW 105127758A TW 105127758 A TW105127758 A TW 105127758A TW I671831 B TWI671831 B TW I671831B
Authority
TW
Taiwan
Prior art keywords
temporary adhesive
adhesive layer
temperature
group
mass
Prior art date
Application number
TW105127758A
Other languages
Chinese (zh)
Other versions
TW201724294A (en
Inventor
加持義貴
中村敦
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW201724294A publication Critical patent/TW201724294A/en
Application granted granted Critical
Publication of TWI671831B publication Critical patent/TWI671831B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

一種半導體元件的製造方法,將在載體基板上具有暫時接著劑層的部件與在至少一個面具有電路的晶粒以所述暫時接著劑層與晶粒相接的方式於溫度T1下壓接,並在所述晶粒的與暫時接著劑層相接之側的相反側的表面於溫度T2下形成成型層,然後於40℃以下的溫度下將所述載體基板剝離;此處,溫度T1為於測定頻率10Hz下測定的所述暫時接著劑層的熔融黏度成為4000Pa.s以上且10000Pa.s以下的溫度,溫度T2為於測定頻率10Hz下測定的所述暫時接著劑層的熔融黏度成為4000Pa.s以上的溫度。 A method for manufacturing a semiconductor element, comprising: crimping a component having a temporary adhesive layer on a carrier substrate and a crystal grain having a circuit on at least one side in a manner that the temporary adhesive layer is in contact with the crystal grain at a temperature T1, And forming a forming layer at a temperature T2 on the surface of the crystal grain on the side opposite to the side where the temporary adhesive layer is in contact, and then peeling the carrier substrate at a temperature of 40 ° C or lower; here, the temperature T1 is The melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz became 4000 Pa. s or more and 10000Pa. The temperature is below s, and the temperature T2 is that the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz becomes 4000 Pa. temperature above s.

Description

半導體元件的製造方法 Manufacturing method of semiconductor element

本發明是有關於一種半導體元件的製造方法及積層體的製造方法。 The present invention relates to a method for manufacturing a semiconductor element and a method for manufacturing a laminated body.

半導體元件有時會於在表面具有電路的晶粒上形成成型層而加以封裝化來使用。作為此種經封裝化的半導體元件的製造方法之一,已知有如下方法:於載體基板上形成暫時接著劑層並將晶粒排列於所形成的暫時接著劑層上,進而於所述暫時接著劑層上形成成型層,將載體基板剝離(例如專利文獻1~專利文獻4)。 Semiconductor devices are sometimes used by forming a molding layer on a die having a circuit on the surface and packaging it. As one of the methods for manufacturing such a packaged semiconductor device, a method is known in which a temporary adhesive layer is formed on a carrier substrate and crystal grains are arranged on the formed temporary adhesive layer, and then the temporary A molding layer is formed on the adhesive layer, and the carrier substrate is peeled off (for example, Patent Documents 1 to 4).

[現有技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]美國專利第7202107號說明書 [Patent Document 1] US Patent No. 7202107

[專利文獻2]美國專利第9082806號說明書 [Patent Document 2] US Patent No. 9082806

[專利文獻3]日本專利特開2013-168417號公報 [Patent Document 3] Japanese Patent Laid-Open No. 2013-168417

[專利文獻4]日本專利特開2001-308116號公報 [Patent Document 4] Japanese Patent Laid-Open No. 2001-308116

然而已得知,若如所述專利文獻所記載般將晶粒排列於暫時接著劑層的表面進而於所述暫時接著劑層的表面形成成型層,則 將晶粒壓接於暫時接著劑層時的晶粒移位成為問題,或暫時接著劑層與成型層的剝離性存在問題。 However, it has been known that if the crystal grains are arranged on the surface of the temporary adhesive layer as described in the aforementioned patent document, and a molding layer is formed on the surface of the temporary adhesive layer, then When the crystal grains are crimped to the temporary adhesive layer, crystal grain displacement becomes a problem, or there is a problem in the peelability between the temporary adhesive layer and the molding layer.

本發明是為了解決所述課題而成者,且其目的在於提供一種有效地抑制晶粒移位且暫時接著劑層與成型層的剝離性優異的半導體元件的製造方法及積層體的製造方法。 The present invention has been made to solve the above problems, and an object thereof is to provide a method for producing a semiconductor element and a method for producing a laminated body, which effectively suppress crystal grain displacement and have excellent peelability of a temporary adhesive layer and a molding layer.

基於所述狀況,本發明者等人進行了研究,結果得知晶粒移位或剝離性問題的原因在於:因晶粒的壓接時或成型層的形成時的加熱而導致暫時接著劑層熔融。並且發現,藉由使晶粒的壓接時或成型層的成形時的暫時接著劑層的熔融黏度變高可解決所述課題。具體而言,藉由下述手段<1>,較佳為藉由<2>~<7>來解決所述課題。 Based on the above-mentioned situation, the present inventors conducted research, and as a result, it was found that the reason for the problem of crystal grain displacement or peelability was that the temporary adhesive layer was caused by heating during the compression bonding of the crystal grains or the formation of the molding layer. Melting. In addition, it has been found that the problem can be solved by increasing the melt viscosity of the temporary adhesive layer at the time of pressure bonding of the crystal grains or at the time of forming the formed layer. Specifically, the problem is solved by the following means <1>, preferably <2> to <7>.

<1>一種半導體元件的製造方法,其中將在載體基板上具有暫時接著劑層的部件與在至少一個面具有電路的晶粒以所述暫時接著劑層與晶粒相接的方式於溫度T1下壓接,並在所述晶粒的與暫時接著劑層相接之側的相反側的表面於溫度T2下形成成型層,然後將所述載體基板於40℃以下的溫度下剝離;此處,溫度T1為於測定頻率10Hz下測定的所述暫時接著劑層的熔融黏度成為4000Pa.s以上且10000Pa.s以下的溫度,溫度T2為於測定頻率10Hz下測定的所述暫時接著劑層的熔融黏度成為4000Pa.s以上的溫度。 <1> A method for manufacturing a semiconductor element, wherein a component having a temporary adhesive layer on a carrier substrate and a crystal grain having a circuit on at least one side are connected at a temperature T1 such that the temporary adhesive layer is in contact with the crystal grain. Press down and form a forming layer at a temperature T2 on the surface of the crystal grain on the side opposite to the side where the temporary adhesive layer is in contact, and then peel the carrier substrate at a temperature below 40 ° C; here The temperature T1 is that the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz becomes 4000 Pa. s or more and 10000Pa. The temperature is below s, and the temperature T2 is that the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz becomes 4000 Pa. temperature above s.

<2>如<1>所述的半導體元件的製造方法,其中於所述成 型層形成後進行100℃以上的熱處理。 <2> The method for manufacturing a semiconductor device according to <1>, wherein After forming the mold layer, heat treatment at 100 ° C or higher is performed.

<3>如<1>或<2>所述的半導體元件的製造方法,其中於將所述載體基板於40℃以下的溫度下剝離後,進而將所述暫時接著劑層於40℃以下去除。 <3> The method for manufacturing a semiconductor device according to <1> or <2>, wherein the carrier substrate is peeled at a temperature of 40 ° C. or lower, and then the temporary adhesive layer is removed at 40 ° C. or lower. .

<4>如<1>~<3>中任一項所述的半導體元件的製造方法,其中所述暫時接著劑層包含選自具有苯乙烯結構的熱塑性彈性體、環烯烴系聚合物及丙烯酸樹脂中的至少一種。 <4> The method for manufacturing a semiconductor device according to any one of <1> to <3>, wherein the temporary adhesive layer includes a thermoplastic elastomer having a styrene structure, a cycloolefin polymer, and acrylic acid. At least one of resins.

<5>如<1>~<4>中任一項所述的半導體元件的製造方法,其中所述成型層包含環氧樹脂。 <5> The method for manufacturing a semiconductor element according to any one of <1> to <4>, wherein the molding layer includes an epoxy resin.

<6>如<1>~<5>中任一項所述的半導體元件的製造方法,其中所述晶粒的溫度T1下的壓接前的位置與所述晶粒的溫度T1下的壓接後的位置的移動距離小於100μm。 <6> The method for manufacturing a semiconductor element according to any one of <1> to <5>, wherein the position before the crimping at the temperature T1 of the crystal grains and the pressure at the temperature T1 of the crystal grains The moving distance of the following position is less than 100 μm.

<7>如<1>~<6>中任一項所述的半導體元件的製造方法,其中所述暫時接著劑層含有氟原子及矽原子中的至少一者。 <7> The method for manufacturing a semiconductor device according to any one of <1> to <6>, wherein the temporary adhesive layer contains at least one of a fluorine atom and a silicon atom.

根據本發明,可提供一種有效地抑制晶粒移位且暫時接著劑層與成型層的剝離性優異的半導體元件的製造方法及積層體的製造方法。 According to the present invention, it is possible to provide a method for producing a semiconductor element and a method for producing a laminated body, which are effective in suppressing crystal grain displacement and have excellent peelability of a temporary adhesive layer and a molding layer.

10‧‧‧載體基板 10‧‧‧ carrier substrate

20‧‧‧暫時接著劑層 20‧‧‧ temporary adhesive layer

30‧‧‧晶粒 30‧‧‧ Grain

40‧‧‧成型層 40‧‧‧forming layer

圖1的(A1)~圖1的(A5)為表示本發明的半導體元件的製造方法的實施形態的概略圖。 FIGS. 1 (A1) to 1 (A5) are schematic views showing an embodiment of a method for manufacturing a semiconductor element according to the present invention.

以下,對本發明的內容進行詳細說明。再者,於本說明書中,所謂「~」,是以包含其前後所記載的數值作為下限值及上限值的意義來使用。 Hereinafter, the content of this invention is demonstrated in detail. In addition, in this specification, "~" is used in the meaning which includes the numerical value described before and after it as a lower limit and an upper limit.

於本說明書中的基(原子團)的表述中,未記載經取代及未經取代的表述包含不具有取代基的基(原子團),並且亦包含具有取代基的基(原子團)。例如,所謂「烷基」,不僅包含不具有取代基的烷基(未經取代的烷基),亦包含具有取代基的烷基(經取代的烷基)。 In the description of the group (atomic group) in the present specification, the descriptions of the substituted and unsubstituted expressions include a group (atomic group) having no substituent, and also include a group (atomic group) having a substituent. For example, the "alkyl group" includes not only an alkyl group (unsubstituted alkyl group) having no substituent, but also an alkyl group (substituted alkyl group) having a substituent.

於本說明書中,「(甲基)丙烯酸酯」表示丙烯酸酯及甲基丙烯酸酯,「(甲基)丙烯酸」表示丙烯酸及甲基丙烯酸,「(甲基)丙烯醯基」表示「丙烯醯基」及「甲基丙烯醯基」。 In this specification, "(meth) acrylate" means acrylate and methacrylate, "(meth) acrylic" means acrylic and methacrylic, and "(meth) acryl" refers to "acryl" "And" methacrylfluorenyl. "

於本說明書中,重量平均分子量及數量平均分子量定義為利用凝膠滲透層析法(Gel Permeation Chromatography,GPC)測定的聚苯乙烯換算值。於本說明書中,重量平均分子量(Mw)及數量平均分子量(Mn)例如可藉由使用HLC-8220(東曹(Tosoh)(股)製造),使用TSKgel Super AWM-H(東曹(Tosoh)(股)製造,6.0mm(內徑)×15.0cm)作為管柱,且使用10mmol/L溴化鋰的N-甲基吡咯啶酮(N-methyl pyrrolidinone,NMP)溶液作為洗滌液而求出。 In this specification, a weight average molecular weight and a number average molecular weight are defined as the polystyrene conversion value measured by the gel permeation chromatography (GPC). In this specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) can be, for example, HLC-8220 (manufactured by Tosoh Co., Ltd.) and TSKgel Super AWM-H (Tosoh) (Manufactured), 6.0 mm (inner diameter) × 15.0 cm) was used as a column, and a 10 mmol / L lithium bromide N-methyl pyrrolidinone (NMP) solution was used as a washing solution.

只要無特別敘述,則本發明中的厚度等設為意指平均厚度者。 Unless otherwise stated, the thickness and the like in the present invention are those that mean the average thickness.

本發明的半導體元件的製造方法的特徵在於:將在載體 基板上具有暫時接著劑層的部件與在至少一個面具有電路的晶粒以所述暫時接著劑層與晶粒相接的方式於溫度T1下壓接,並在所述晶粒的與暫時接著劑層相接之側的相反側的表面於溫度T2下形成成型層,然後將所述載體基板於40℃以下的溫度下剝離。 The method for manufacturing a semiconductor device according to the present invention is characterized in that: A component having a temporary adhesive layer on a substrate and a die having a circuit on at least one side are crimped at a temperature T1 in a manner that the temporary adhesive layer is in contact with the die, and the die is temporarily bonded to the die. A surface on the opposite side of the side where the agent layers are in contact is formed at a temperature T2, and then the carrier substrate is peeled off at a temperature of 40 ° C or lower.

此處,溫度T1為於測定頻率10Hz下測定的所述暫時接著劑層的熔融黏度成為4000Pa.s以上且10000Pa.s以下的溫度,溫度T2為於測定頻率10Hz下測定的所述暫時接著劑層的熔融黏度成為4000Pa.s以上的溫度。此種積層體可設置較晶片尺寸大的再配線(再分配層(RDL:Redistribution layer))區域,因此可較佳地用於以無基板化、低背化為特徵的扇出式晶圓級封裝(Fan-out Wafer Level Package,FOWLP)中。 Here, the temperature T1 is that the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz becomes 4000 Pa. s or more and 10000Pa. The temperature is below s, and the temperature T2 is that the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz becomes 4000 Pa. temperature above s. This laminated body can be provided with a larger area of redistribution (RDL: Redistribution layer) than the wafer size, so it can be better used for fan-out wafer level featuring no substrate and low backing. In a package (Fan-out Wafer Level Package, FOWLP).

藉由設為此種構成,可提供一種剝離性優異的半導體元件或積層體的製造方法。即,自先前以來是於暫時接著劑層的表面形成成型層來進行製造半導體元件等的積層體,但已得知先前的製造方法中存在暫時接著劑層與成型層的剝離性劣化的情況。本發明者對其理由進行了研究,結果得知如下問題:於設置暫時接著劑層後形成成型層,但因該成型層的形成時的加熱而導致暫時接著劑層熔融,且導致構成成型層的樹脂與構成暫時接著劑層的樹脂於表層混雜。因此,本發明中,藉由將成型層形成時的暫時接著劑層的熔融黏度設為4000Pa.s以上而避免了該點。 With such a configuration, a method for manufacturing a semiconductor element or a laminate having excellent peelability can be provided. In other words, conventionally, a molding layer has been formed on the surface of a temporary adhesive layer to manufacture a laminated body such as a semiconductor element. However, it has been known that the peelability of the temporary adhesive layer and the molded layer may be deteriorated in the previous manufacturing method. The present inventors have studied the reason, and as a result, they have found the following problem: a forming layer is formed after a temporary adhesive layer is provided, but the temporary adhesive layer is melted due to heating during the formation of the forming layer, and the forming layer is constituted The resin and the resin constituting the temporary adhesive layer are mixed in the surface layer. Therefore, in the present invention, the melt viscosity of the temporary adhesive layer when the molding layer is formed is set to 4000 Pa. s or more to avoid this point.

進而已得知,於暫時接著劑層與成型層之間設置具有電路的晶粒,但於將晶粒排列壓接於暫時接著劑層的表面的情況下,存 在因將晶粒壓接於暫時接著劑層時的加熱而導致暫時接著劑層熔融且晶粒發生移位的情況。本發明中,藉由將在載體基板上具有暫時接著劑層的部件與在至少一個面具有電路的晶粒以暫時接著劑層與晶粒相接的方式於溫度T1下壓接,可有效地抑制晶粒移位。 Furthermore, it has been known that crystal grains having a circuit are provided between the temporary adhesive layer and the molding layer. However, when the crystal grains are aligned and pressed on the surface of the temporary adhesive layer, the In some cases, the temporary adhesive layer is melted and the crystal grains are displaced due to heating when the crystal grains are pressed against the temporary adhesive layer. In the present invention, a component having a temporary adhesive layer on a carrier substrate and a crystal having a circuit on at least one side are crimped at a temperature T1 in a manner that the temporary adhesive layer and the crystal are in contact with each other. Inhibit grain shift.

藉由抑制晶粒移位,晶粒彼此的間距不易產生偏差,可高精度地製造半導體元件。 By suppressing the displacement of the crystal grains, the pitch between the crystal grains is less likely to vary, and a semiconductor element can be manufactured with high accuracy.

再者,於成型層形成時亦會施加大的壓力,但對晶粒及不具有晶粒的部分的暫時接著劑層均勻地施加壓力,因此推測幾乎不存在成型層形成時的晶粒移位所造成的影響。 In addition, a large pressure is also applied when the forming layer is formed, but the pressure is uniformly applied to the temporary adhesive layer of the crystal grains and the portion having no crystal grains. Therefore, it is estimated that there is almost no crystal grain shift during the formation of the molding layer. The impact.

以下,以本發明的半導體元件的製造方法為例進行說明,但關於本發明的積層體的製造方法亦同樣如此。 Hereinafter, the manufacturing method of the semiconductor element of the present invention will be described as an example, but the same applies to the manufacturing method of the laminated body of the present invention.

關於本發明的半導體元件的製造方法,使用圖1的(A1)~圖1的(A5)進行說明。首先,如圖1的(A1)所示,於載體基板10上設置暫時接著劑層20。 A method for manufacturing a semiconductor element according to the present invention will be described using (A1) to (A5) of FIG. 1. First, as shown in (A1) of FIG. 1, a temporary adhesive layer 20 is provided on a carrier substrate 10.

載體基板10並無特別限定,例如可列舉:矽基板、玻璃基板、金屬基板、化合物半導體基板等。其中,較佳為矽基板。載體基板的厚度並無特別限定,例如較佳為300μm~100mm,更佳為300μm~10mm。 The carrier substrate 10 is not particularly limited, and examples thereof include a silicon substrate, a glass substrate, a metal substrate, a compound semiconductor substrate, and the like. Among them, a silicon substrate is preferred. The thickness of the carrier substrate is not particularly limited. For example, it is preferably 300 μm to 100 mm, and more preferably 300 μm to 10 mm.

暫時接著劑層20可使用後述的暫時接著劑組成物而形成。作為暫時接著劑組成物的應用方法,可列舉:旋轉塗佈法、噴霧法、輥塗佈法、流塗法、刮刀塗佈法、網版印刷法、浸漬塗 佈法等。另外,亦可為利用壓力將暫時接著劑組成物自狹縫狀的開口擠出,從而將暫時接著劑組成物塗佈於載體基板10上的方法。再者,圖的(A1)~圖1的(A5)中,於載體基板10的一個面的整面形成暫時接著劑層20,但亦可不於載體基板10的整面形成暫時接著劑層20。 The temporary adhesive layer 20 can be formed using the temporary adhesive composition mentioned later. Examples of the application method of the temporary adhesive composition include a spin coating method, a spray method, a roll coating method, a flow coating method, a doctor blade coating method, a screen printing method, and a dip coating method. Buffa and so on. Alternatively, a method may be used in which the temporary adhesive composition is extruded from the slit-shaped opening under pressure to apply the temporary adhesive composition to the carrier substrate 10. In addition, in (A1) to (A5) of FIG. 1, the temporary adhesive layer 20 is formed on the entire surface of one surface of the carrier substrate 10, but the temporary adhesive layer 20 may not be formed on the entire surface of the carrier substrate 10. .

另外,亦可預先將暫時接著劑組成物膜化,並藉由層壓而於載體基板10上對該膜進行製膜。 Alternatively, the temporary adhesive composition may be formed into a film in advance, and the film may be formed on the carrier substrate 10 by lamination.

另外,暫時接著劑層可僅為一層,亦可為兩層以上。例如,本發明中的積層體可為包括載體基材/第1暫時接著劑層/第2暫時接著劑層/晶粒成型層的構成。 In addition, the temporary adhesive layer may be only one layer, or may be two or more layers. For example, the laminated body in the present invention may have a structure including a carrier substrate / a first temporary adhesive layer / a second temporary adhesive layer / a die-forming layer.

暫時接著劑組成物的應用量例如較佳為乾燥後的暫時接著劑層的平均膜厚成為0.1μm~1000μm的應用量。下限較佳為1.0μm以上,更佳為10.0μm以上。上限較佳為300μm以下,更佳為200μm以下。 The application amount of the temporary adhesive composition is, for example, preferably an application amount in which the average film thickness of the temporary adhesive layer after drying is 0.1 μm to 1000 μm. The lower limit is preferably 1.0 μm or more, and more preferably 10.0 μm or more. The upper limit is preferably 300 μm or less, and more preferably 200 μm or less.

較佳為於應用暫時接著劑組成物後進行乾燥。乾燥條件例如較佳為於50℃~250℃下進行10秒~1000秒。乾燥溫度更佳為90℃~220℃,進而更佳為100℃~200℃。乾燥時間更佳為20秒~600秒,進而更佳為30秒~300秒。乾燥可分為兩階段而階段性地提高溫度來實施。 It is preferable to dry after applying a temporary adhesive composition. The drying conditions are preferably performed at 50 ° C to 250 ° C for 10 seconds to 1000 seconds, for example. The drying temperature is more preferably 90 ° C to 220 ° C, and even more preferably 100 ° C to 200 ° C. The drying time is more preferably 20 seconds to 600 seconds, and even more preferably 30 seconds to 300 seconds. Drying can be performed in two stages and stepwise increasing the temperature.

於所述實施形態中,在載體基板上具有暫時接著劑層的部件中亦可於不脫離本發明的主旨的範圍內具有其他層。作為其他層,可例示被稱為脫模層、剝離層、分離層的層。作為剝離層, 例如可參考日本專利特開2014-212292號公報的段落0025~段落0055的記載,該些內容被併入至本說明書中。另外,作為分離層,可參考WO2013-065417號手冊的段落0069~段落0124的記載,該些內容被併入至本說明書中。 In the above-mentioned embodiment, the member having a temporary adhesive layer on the carrier substrate may have another layer within a range not departing from the gist of the present invention. Examples of the other layer include a layer called a release layer, a release layer, and a release layer. As a release layer, For example, reference can be made to the descriptions of paragraphs 0025 to 0055 in Japanese Patent Laid-Open No. 2014-212292, which are incorporated into this specification. In addition, as the separation layer, the descriptions in paragraphs 0069 to 0124 of the manual WO2013-065417 can be referred to, and these contents are incorporated into this specification.

然而,本發明中較佳為在載體基板的表面具有暫時接著劑層。 However, in the present invention, it is preferable to have a temporary adhesive layer on the surface of the carrier substrate.

其次,如圖1的(A2)所示,於暫時接著劑層20上壓接配置晶粒30。 Next, as shown in FIG. 1 (A2), the crystal grains 30 are arranged on the temporary adhesive layer 20 by pressure bonding.

晶粒30為在至少一個表面具有電路者,較佳為僅在一個表面具有電路者。作為晶粒,例如可列舉包含矽、藍寶石、碳化矽(SiC)、砷化鎵(GaAs)、磷化鎵(GaP)、氮化鎵(GaN)等的晶圓晶片。 The die 30 has a circuit on at least one surface, and preferably has a circuit on only one surface. Examples of the crystal grain include wafer wafers including silicon, sapphire, silicon carbide (SiC), gallium arsenide (GaAs), gallium phosphide (GaP), and gallium nitride (GaN).

於本發明中,關於晶粒30的壓接,較佳為於測定頻率10Hz下測定的暫時接著劑層的熔融黏度成為4000Pa.s以上且10000Pa.s以下的溫度T1下進行壓接。溫度T1較佳為暫時接著劑層的熔融黏度成為4300Pa.s~9800Pa.s的溫度,更佳為暫時接著劑層的熔融黏度成為4500Pa.s~9700Pa.s的溫度。 In the present invention, as for the pressure bonding of the crystal grains 30, it is preferable that the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz becomes 4000 Pa. s or more and 10000Pa. Compression bonding is performed at a temperature T1 of s or less. The temperature T1 is preferably such that the melt viscosity of the temporary adhesive layer becomes 4300Pa. s ~ 9800Pa. The temperature of s is more preferably that the melt viscosity of the temporary adhesive layer becomes 4500Pa. s ~ 9700Pa. s temperature.

溫度T1的溫度並無特別規定,可設為100℃~300℃(下限較佳為130℃以上,更佳為160℃以上,上限較佳為260℃以下,更佳為240℃以下,進而更佳為180℃以下)的範圍。 The temperature T1 is not particularly limited, and may be set to 100 ° C to 300 ° C (the lower limit is preferably 130 ° C or higher, more preferably 160 ° C or higher, the upper limit is preferably 260 ° C or lower, more preferably 240 ° C or lower, and even more It is preferably in the range of 180 ° C or lower).

壓接較佳為於對晶粒30施加的壓力成為0.001MPa~10MPa的條件下進行,更佳為0.01MPa~5MPa。壓接時間較佳為0.1秒~15秒,更佳為0.5秒~10秒。 The compression bonding is preferably performed under the condition that the pressure applied to the crystal grains 30 is 0.001 MPa to 10 MPa, and more preferably 0.01 MPa to 5 MPa. The crimping time is preferably 0.1 to 15 seconds, and more preferably 0.5 to 10 seconds.

其次,如圖1的(A3)所示,於晶粒30的與暫時接著劑層20相接之側的相反側的表面,於溫度T2下形成成型層。如圖1所示,成型層設置於晶粒上以及暫時接著劑層的表面。成型層較佳為以將晶粒密封的方式進行覆蓋,但未完全覆蓋的情況當然亦包含於本發明的範圍中。另外,成型層並非必須為完整的層狀,例如以覆蓋晶粒的方式設置於暫時接著劑層的表面的態樣亦包含於本發明的範圍中。 Next, as shown in FIG. 1 (A3), a molding layer is formed at a temperature T2 on the surface of the crystal grain 30 on the side opposite to the side where the temporary adhesive layer 20 is in contact. As shown in FIG. 1, the molding layer is disposed on the crystal grains and temporarily adheres to the surface of the agent layer. The molding layer is preferably covered in a manner of sealing the crystal grains, but the case where it is not completely covered is of course also included in the scope of the present invention. In addition, the molding layer does not have to be a complete layer, and for example, a state in which it is provided on the surface of the temporary adhesive layer so as to cover the crystal grains is also included in the scope of the present invention.

關於成型層形成時的溫度T2,是於測定頻率10Hz下測定的暫時接著劑層的熔融黏度成為4000Pa.s以上的溫度下進行。溫度T2若為暫時接著劑層的熔融黏度成為4000Pa.s以上的溫度,則熔融黏度的上限並無特別規定,較佳為暫時接著劑層的熔融黏度成為4300Pa.s~15000Pa.s的溫度,更佳為暫時接著劑層的熔融黏度成為4500Pa.s~12000Pa.s的溫度。 Regarding the temperature T2 when the forming layer was formed, the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz was 4000 Pa. Perform at temperatures above s. If the temperature T2 is temporary, the melt viscosity of the adhesive layer becomes 4000Pa. For temperatures above s, the upper limit of the melt viscosity is not particularly specified, and it is preferable that the melt viscosity of the temporary adhesive layer becomes 4300Pa. s ~ 15000Pa. The temperature of s is more preferably that the melt viscosity of the temporary adhesive layer becomes 4500Pa. s ~ 12000Pa. s temperature.

溫度T2並無特別規定,較佳為20℃~300℃(較佳為100℃~260℃,更佳為130℃~260℃,進而更佳為160℃~240℃)。 The temperature T2 is not particularly specified, but is preferably 20 ° C to 300 ° C (preferably 100 ° C to 260 ° C, more preferably 130 ° C to 260 ° C, and even more preferably 160 ° C to 240 ° C).

另外,本發明中較佳為溫度T1下的暫時接著劑層的熔融黏度高於溫度T2下的暫時接著劑層的溶融黏度,且較佳為溫度T1下的暫時接著劑層的熔融黏度較溫度T2下的暫時接著劑層的溶融黏度高30Pa.s以上。 In addition, in the present invention, the melt viscosity of the temporary adhesive layer at temperature T1 is preferably higher than the melt viscosity of the temporary adhesive layer at temperature T2, and the melt viscosity of the temporary adhesive layer at temperature T1 is preferably lower than the temperature. The melting viscosity of the temporary adhesive layer under T2 is 30Pa higher. s or more.

藉由設為此種範圍,更不易引起晶粒移位而較佳。進而更佳為,溫度T1下的暫時接著劑層的熔融黏度較佳為較溫度T2下的暫時接著劑層的溶融黏度高30Pa.s~600Pa.s。 By setting it as such a range, it is more difficult to cause a crystal grain shift, and it is preferable. It is even more preferred that the melt viscosity of the temporary adhesive layer at temperature T1 is preferably 30 Pa higher than the melt viscosity of the temporary adhesive layer at temperature T2. s ~ 600Pa. s.

晶粒亦稱為晶片,在至少一個面具有電路。晶粒通常於基板的表面設置電路。基板可例示矽基板等。晶粒例如為晶粒的基板的表面積為1mm2~500mm2左右的四角形。此處的四角形的主旨為除數學意義上的四角形以外亦包括大體呈四角形的形狀者。另外,四角形通常為長方形。通常藉由對形成於矽晶圓等半導體晶圓上的基板進行切割分離而獲得。 A die is also called a wafer and has a circuit on at least one side. The die is usually provided with a circuit on the surface of the substrate. Examples of the substrate include a silicon substrate. The crystal grain is, for example, a quadrangle having a surface area of a substrate of crystal grains of about 1 mm 2 to 500 mm 2 . The main idea of the quadrangle here is to include those that are generally quadrangular in addition to the quadrilateral in the mathematical sense. The quadrangular shape is generally rectangular. It is usually obtained by cutting and separating a substrate formed on a semiconductor wafer such as a silicon wafer.

作為成型層40並無特別限定。例如較佳為包含樹脂,更佳為包含硬化性樹脂。另外,成型層較佳為包含無機填充材及硬化劑的至少一種,亦可進而包含其他成分。 The molding layer 40 is not particularly limited. For example, it is preferable to include a resin, and it is more preferable to include a curable resin. The molding layer preferably contains at least one of an inorganic filler and a hardener, and may further contain other components.

作為硬化性樹脂,例如可列舉:苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、雙酚A酚醛清漆樹脂等酚醛清漆型酚樹脂,可溶酚醛樹脂(resole)型酚樹脂等酚樹脂,苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂,雙酚A型環氧樹脂、雙酚F型環氧樹脂等雙酚型環氧樹脂,對苯二酚型環氧樹脂、聯苯型環氧樹脂、二苯乙烯型環氧樹脂、三苯酚甲烷型環氧樹脂、烷基改質三苯酚甲烷型環氧樹脂、含三嗪核的環氧樹脂、二環戊二烯改質苯酚型環氧樹脂、萘酚型環氧樹脂、萘型環氧樹脂、具有伸苯基及/或伸聯苯基骨架的苯酚芳烷基型環氧樹脂、具有伸苯基及/或伸聯苯基骨架的萘酚芳烷基型環氧樹脂等芳烷基型環氧樹脂等環氧樹脂,脲(urea)樹脂、三聚氰胺樹脂等具有三嗪環的樹脂,不飽和聚酯樹脂,雙順丁烯二醯亞胺樹脂,聚胺基甲酸酯樹脂,鄰苯二甲酸二烯丙酯樹脂,矽酮樹脂,具有苯 并噁嗪環的樹脂,氰酸酯樹脂等,該些可單獨使用,亦可混合使用。再者,此處所謂環氧樹脂是指於一分子內具有兩個以上的環氧基的單體、寡聚物、聚合物全體。該些中較佳為環氧樹脂。藉此可提高電氣特性。進而,即便添加大量的無機填充材,亦可維持可成形的流動性。 Examples of the curable resin include novolac-type phenol resins such as phenol novolac resin, cresol novolac resin, bisphenol A novolac resin, phenol resins such as soluble phenol resin (resole) -type phenol resin, and phenol novolac Type epoxy resin, cresol novolac type epoxy resin and other novolac type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin and other bisphenol type epoxy resin, hydroquinone type ring Oxygen resin, biphenyl epoxy resin, stilbene epoxy resin, trisphenol methane epoxy resin, alkyl modified trisphenol methane epoxy resin, triazine core-containing epoxy resin, dicyclopentane Diene modified phenol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, phenol aralkyl type epoxy resin having phenylene and / or biphenyl group, / Or epoxy resins such as aralkyl epoxy resins such as naphthol aralkyl epoxy resins with biphenyl skeleton, resins with triazine rings such as urea resins and melamine resins, unsaturated polyesters Resin, bis-cis butylene diimide resin, polyurethane resin Grease, diallyl phthalate resin, silicone resin, with benzene The oxazine ring-containing resin, cyanate resin and the like may be used alone or in combination. The term "epoxy resin" used herein refers to the entire monomer, oligomer, and polymer having two or more epoxy groups in one molecule. Among these, epoxy resin is preferable. This improves electrical characteristics. Furthermore, even if a large amount of inorganic filler is added, moldable fluidity can be maintained.

尤其,作為較佳的實施形態而例示:使用環氧樹脂作為成型層40的主成分的樹脂,且使用苯乙烯系彈性體作為暫時接著劑層20的主成分的樹脂。藉由採用此種組合,可達成積層體的高剝離性而較佳。再者,此處所謂的主成分的樹脂,是指成型層40或暫時接著劑層20中所含的樹脂成分中含量最多的成分,通常為所述樹脂成分的80質量%以上。 In particular, as a preferred embodiment, a resin using epoxy resin as a main component of the molding layer 40 and a resin using a styrene-based elastomer as a main component of the temporary adhesive layer 20 are exemplified. By using such a combination, high peelability of the laminated body can be achieved, which is preferable. The resin of the main component herein refers to a component having the largest content among the resin components contained in the molding layer 40 or the temporary adhesive layer 20, and is usually 80% by mass or more of the resin component.

樹脂的含量並無特別限定,較佳為成型層整體的3質量%~30質量%,尤其較佳為5質量%~20質量%。若含量為所述下限值以上,則可抑制流動性的降低,使晶粒30的密封更良好。另外,藉由設為所述上限值以下,可有效地抑制焊料耐熱性的降低。樹脂可僅使用一種,亦可使用兩種以上。 The content of the resin is not particularly limited, but it is preferably 3% to 30% by mass of the entire molding layer, and particularly preferably 5% to 20% by mass. When the content is at least the lower limit value, a decrease in fluidity can be suppressed, and the sealing of the crystal grains 30 can be made better. Moreover, by making it into the said upper limit or less, the fall of solder heat resistance can be suppressed effectively. The resin may be used alone or in combination of two or more.

作為硬化劑,例如除二乙三胺(diethylene triamine,DETA)、三乙四胺(triethylene tetramine,TETA)、間二甲苯二胺(meta-xylylene diamine,MXDA)等脂肪族多胺,二胺基二苯基甲烷(diamino diphenyl methane,DDM)、間苯二胺(m-phenylene diamine,MPDA)、二胺基二苯基碸(diamino diphenyl sulfone,DDS)等芳香族多胺以外,可列舉:包含二氰二胺(dicyandiamide, DICY)、有機酸二醯肼等的多胺化合物等胺系硬化劑,酚醛清漆型酚樹脂、苯酚聚合物等酚系硬化劑(具有酚性羥基的硬化劑),六氫鄰苯二甲酸酐(hexahydrophthalic anhydride,HHPA)、甲基四氫鄰苯二甲酸酐(methyl tetrahydrophthalic anhydride,MTHPA)等環狀脂肪酸酐(液狀酸酐)、偏苯三甲酸酐(trimellitic anhydride,TMA)、均苯四甲酸二酐(pyromellitic dianhydride,PMDA)、二苯甲酮四羧酸(benzophenone tetracarboxylic dianhydride,BTDA)等芳香族酸酐等酸酐系硬化劑,聚醯胺樹脂、聚硫醚樹脂。 Examples of the hardener include aliphatic polyamines such as diethylene triamine (DETA), triethylene tetramine (TETA), and meta-xylylene diamine (MXDA), and diamine groups. In addition to aromatic polyamines such as diamino diphenyl methane (DDM), m-phenylene diamine (MPDA), and diamino diphenyl sulfone (DDS), examples include: Dicyandiamide DICY), amine-based hardeners such as polyamine compounds such as organic acid dihydrazine, phenol-based hardeners such as novolac phenol resins, phenol polymers (hardeners with phenolic hydroxyl groups), and hexahydrophthalic anhydride (hexahydrophthalic anhydride (HHPA)), methyl tetrahydrophthalic anhydride (MTHPA) and other cyclic fatty acid anhydrides (liquid acid anhydride), trimellitic anhydride (TMA), pyromellitic acid dihydrate Anhydride hardeners such as aromatic anhydrides (pyromellitic dianhydride (PMDA), benzophenone tetracarboxylic dianhydride (BTDA), etc.), polyamide resins, and polysulfide resins.

於使用所述環氧樹脂作為樹脂的情況下,硬化劑並無特別限定,較佳為使用具有酚性羥基的硬化劑。具有酚性羥基的硬化劑與其他硬化劑相比容易控制樹脂的反應,因此可確保製造半導體元件時的良好的流動性。另外,具有酚性羥基的硬化劑由於其反應性控制容易,故亦可實現無機填充材的高填充化。因此,可確保半導體元件的優異的可靠性。此處所謂具有酚性羥基的硬化劑,為於一分子內具有兩個以上的酚性羥基的單體、寡聚物、聚合物全體,並不特別限定其分子量、分子結構。具體而言,可列舉:苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂等酚醛清漆型酚樹脂,三苯酚甲烷型酚樹脂,萜烯改質酚樹脂、二環戊二烯改質酚樹脂等改質酚樹脂,具有伸苯基及/或伸聯苯基骨架的苯酚芳烷基樹脂、具有伸苯基及/或伸聯苯基骨架的萘酚芳烷基樹脂等芳烷基型酚樹脂,雙酚化合物等,該些可單獨使用,亦可混合使用。 When using the said epoxy resin as a resin, hardening | curing agent is not specifically limited, It is preferable to use the hardening | curing agent which has a phenolic hydroxyl group. A hardener having a phenolic hydroxyl group is easier to control the reaction of the resin than other hardeners, and therefore, it is possible to ensure good fluidity when manufacturing a semiconductor device. Moreover, since the hardening | curing agent which has a phenolic hydroxyl group is easy to control reactivity, high filling of an inorganic filler can also be achieved. Therefore, excellent reliability of the semiconductor element can be ensured. The curing agent having a phenolic hydroxyl group here is a monomer, an oligomer, and a polymer having two or more phenolic hydroxyl groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited. Specific examples include modification of novolac-type phenol resins such as phenol novolac resin, cresol novolac resin, triphenol methane-type phenol resin, terpene-modified phenol resin, and dicyclopentadiene-modified phenol resin. Phenol resins, aralkyl-type phenol resins, such as phenol aralkyl resins having a phenylene and / or biphenyl group, naphthol aralkyl resins having a phenylene and / or biphenyl group, These may be used alone or in combination.

硬化劑的含量並無特別限定,較佳為成型層整體的2質量%~10質量%,尤其較佳為4質量%~7質量%。硬化劑可僅使用一種,亦可使用兩種以上。 The content of the hardener is not particularly limited, but is preferably 2% by mass to 10% by mass of the entire molding layer, and particularly preferably 4% by mass to 7% by mass. The hardener may be used alone or in combination of two or more.

另外,於樹脂為環氧樹脂的情況下,作為硬化劑,可較佳地使用具有酚性羥基的硬化劑,於該情況下,所述環氧樹脂的環氧基與具有酚性羥基的硬化劑的酚性羥基的當量比(環氧基/酚性羥基)並無特別限定,較佳為0.5~2.0,尤其較佳為0.7~1.5。若當量比為所述範圍內,則硬化性及耐濕可靠性尤其優異。 In addition, when the resin is an epoxy resin, as the curing agent, a curing agent having a phenolic hydroxyl group can be preferably used. In this case, the epoxy group of the epoxy resin and the curing having a phenolic hydroxyl group are used. The equivalent ratio of the phenolic hydroxyl group (epoxy group / phenolic hydroxyl group) of the agent is not particularly limited, but is preferably 0.5 to 2.0, and particularly preferably 0.7 to 1.5. When the equivalent ratio is within the above range, the curability and moisture resistance reliability are particularly excellent.

較佳為於成型層中含有無機填充材。作為所述無機填充材,例如可列舉:滑石、煅燒黏土、未煅燒黏土、雲母、玻璃等矽酸鹽,氧化鈦、氧化鋁、熔融二氧化矽(球狀熔融二氧化矽、破碎熔融二氧化矽)、結晶二氧化矽等二氧化矽粉末等氧化物,碳酸鈣、碳酸鎂、水滑石等碳酸鹽,氫氧化鋁、氫氧化鎂、氫氧化鈣等氫氧化物,硫酸鋇、硫酸鈣、亞硫酸鈣等硫酸鹽或亞硫酸鹽,硼酸鋅、偏硼酸鋇、硼酸鋁、硼酸鈣、硼酸鈉等硼酸鹽,氮化鋁、氮化硼、氮化矽等氮化物等。所述無機填充材可單獨使用,亦可混合使用。該些中亦較佳為熔融二氧化矽、結晶二氧化矽等二氧化矽粉末,尤其較佳為球狀熔融二氧化矽。藉此,可提高耐熱性、耐濕性、強度等。所述無機填充材的形狀並無特別限定,較佳為正球狀,且較佳為粒度分佈寬廣。藉此,尤其可提高成型樹脂組成物的流動性。進而,亦可藉由偶合劑來對所述無機填充材的表面進行表面處理。 It is preferable to contain an inorganic filler in a molding layer. Examples of the inorganic filler include silicates such as talc, calcined clay, uncalcined clay, mica, and glass; titanium oxide, aluminum oxide, and fused silica (spherical fused silica, crushed fused silica). Silicon dioxide), oxides such as crystalline silicon dioxide, and other silicon dioxide powders; carbonates such as calcium carbonate, magnesium carbonate, and hydrotalcite; hydroxides such as aluminum hydroxide, magnesium hydroxide, and calcium hydroxide; barium sulfate, calcium sulfate, Sulfates or sulfites such as calcium sulfite, borates such as zinc borate, barium metaborate, aluminum borate, calcium borate, and sodium borate; nitrides such as aluminum nitride, boron nitride, and silicon nitride. The inorganic fillers can be used alone or in combination. Among these, fused silicon dioxide, crystalline silicon dioxide, and the like are also preferred, and spherical fused silica is particularly preferred. Thereby, heat resistance, moisture resistance, strength, etc. can be improved. The shape of the inorganic filler is not particularly limited, it is preferably spherical, and preferably has a wide particle size distribution. Thereby, especially the fluidity | liquidity of a molding resin composition can be improved. Furthermore, the surface of the inorganic filler may be surface-treated with a coupling agent.

成型層中所含的所述無機填充材的含量並無特別限定,較佳為所述成型樹脂組成物整體的20質量%~95質量%,尤其較佳為30質量%~90質量%。若含量為所述下限值以上,則抑制耐濕性的降低,若設為所述上限值以下,則可維持良好的流動性。無機填充材可僅使用一種,亦可使用兩種以上。 The content of the inorganic filler contained in the molding layer is not particularly limited, but it is preferably 20% to 95% by mass of the entire molding resin composition, and particularly preferably 30% to 90% by mass. If the content is greater than or equal to the lower limit value, a decrease in moisture resistance is suppressed, and if it is less than or equal to the upper limit value, good fluidity can be maintained. Only one type of inorganic filler may be used, or two or more types may be used.

另外,於無損本發明的目的的範圍內,亦可於成型層中添加1,8-二氮雜雙環[5,4,0]十一烯-7等二氮雜雙環烯烴及其衍生物,三丁胺、苄基二甲胺等胺系化合物,2-甲基咪唑等咪唑化合物,三苯基膦、甲基二苯基膦等有機膦類,四苯基鏻.四苯基硼酸鹽、四苯基鏻.四苯甲酸硼酸鹽、四苯基鏻.四萘甲酸硼酸鹽、四苯基鏻.四萘甲醯氧基硼酸鹽、四苯基鏻.四萘氧基硼酸鹽等四取代鏻.四取代硼酸鹽等硬化促進劑,環氧基矽烷、巰基矽烷、胺基矽烷、烷基矽烷、脲基矽烷、乙烯基矽烷等的矽烷偶合劑,或鈦酸酯偶合劑、鋁偶合劑、鋁/鋯偶合劑等偶合劑,碳黑、氧化鐵(bengala)等著色劑,巴西棕櫚蠟等天然蠟,聚乙烯蠟等合成蠟,硬脂酸或硬脂酸鋅等高級脂肪酸及其金屬鹽類,石蠟等脫模劑,矽油、矽橡膠等低應力化成分,溴化環氧樹脂或三氧化銻、氫氧化鋁、氫氧化鎂、硼酸鋅、鉬酸鋅、磷腈等阻燃劑,氧化鉍水合物等無機離子交換體等添加劑。該些成分可分別僅使用一種,亦可使用兩種以上。 In addition, as long as the object of the present invention is not impaired, diazabicyclic olefins such as 1,8-diazabicyclo [5,4,0] undecene-7 and derivatives thereof may be added to the molding layer. Amine compounds such as tributylamine and benzyldimethylamine, imidazole compounds such as 2-methylimidazole, organic phosphines such as triphenylphosphine and methyldiphenylphosphine, tetraphenylphosphonium. Tetraphenylborate, tetraphenylphosphonium. Tetrabenzoic acid borate, tetraphenylphosphonium. Tetranaphthoic acid borate, tetraphenylphosphonium. Tetranaphthylmethyloxyborate, tetraphenylphosphonium. Tetranaphthyloxyborate and other tetra-substituted hydrazones. Hardening accelerators such as tetra-substituted borate, silane coupling agents such as epoxy silane, mercapto silane, amine silane, alkyl silane, ureido silane, vinyl silane, or titanate coupling agent, aluminum coupling agent, aluminum / Coupling agents such as zirconium coupling agents, colorants such as carbon black and iron oxide (bengala), natural waxes such as carnauba wax, synthetic waxes such as polyethylene wax, higher fatty acids such as stearic acid or zinc stearate, and metal salts thereof , Release agents such as paraffin, low stress components such as silicone oil and silicone rubber, flame retardants such as brominated epoxy resins or antimony trioxide, aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, phosphazene, etc. Additives such as bismuth hydrate and inorganic ion exchangers. These components may be used alone or in combination of two or more.

作為成型層的市售品,可列舉:住友貝克萊特(Sumitomo Bakelite)製造的蘇米康(sumikon)EME-G750系列、蘇米康 (sumikon)EME-G760系列、蘇米康(sumikon)EME-G770系列、蘇米康(sumikon)EME-G790系列,日立化成製造的CEL系列,長瀨化成(Nagase chemteX)製造的R4000系列,漢高(Henkel)製造的GR系列,京瓷化學(Kyocera Chemical)製造的KE系列等。 As a commercially available product of the molding layer, Sumikon EME-G750 series manufactured by Sumitomo Bakelite, Sumikon (sumikon) EME-G760 series, Sumikon EME-G770 series, Sumikon EME-G790 series, CEL series manufactured by Hitachi Chemical, R4000 series manufactured by Nagase chemteX, Han GR series manufactured by Henkel, KE series manufactured by Kyocera Chemical, etc.

成型層40的厚度較佳為於最薄部分為100μm以上,更佳為1000μm以上。另外,作為厚度的上限值,較佳為於最薄部分為3000μm以下,更佳為5000μm以下。 The thickness of the molding layer 40 is preferably 100 μm or more at the thinnest portion, and more preferably 1000 μm or more. The upper limit of the thickness is preferably 3,000 μm or less at the thinnest portion, and more preferably 5,000 μm or less.

作為成型層40的形成方法,可列舉:層壓膜狀的成型樹脂組成物的方法、藉由網版印刷或分配器形成膏狀的成型樹脂組成物的方法、對液狀的成型樹脂組成物進行烘烤的方法、使用固體的壓縮成型樹脂組成物而進行加熱的方法。 Examples of the method for forming the molding layer 40 include a method for laminating a film-like molding resin composition, a method for forming a paste-like molding resin composition by screen printing or a dispenser, and a method for forming a liquid resin composition A method of baking and a method of heating using a solid compression-molded resin composition.

另外,本發明中,於形成成型層40時,亦可採用使用熔融樹脂的態樣。於該情況下,覆蓋晶粒30時的成型樹脂組成物的黏度較佳為3.0Pa.s~20.0Pa.s左右。 In addition, in the present invention, when the molding layer 40 is formed, a state in which a molten resin is used may be adopted. In this case, the viscosity of the molded resin composition when covering the crystal grains 30 is preferably 3.0 Pa. s ~ 20.0Pa. s around.

於使用熔融樹脂的情況下,成型樹脂組成物是例如使用混合機等將原料充分且均勻地混合後,進而利用熱輥、捏合機、擠出機等混練機進行熔融混練,冷卻後加以粉碎而獲得。 In the case of using a molten resin, the molded resin composition is, for example, a raw material that is sufficiently and uniformly mixed using a mixer, etc., and further melt-kneaded by a kneading machine such as a hot roll, a kneader, or an extruder, and pulverized after cooling. obtain.

利用成型樹脂組成物進行密封時的黏度並無特別限定,較佳為3.0Pa.s以上,更佳為5.0Pa.s以上。另一方面,所述黏度較佳為30.0Pa.s以下,更佳為20.0Pa.s以下。藉此可抑制空隙的產生。黏度例如可藉由高化式流動試驗儀等來求出。於利用成型樹脂組 成物進行密封後,將成型樹脂組成物硬化。作為將成型樹脂組成物硬化的方法,可列舉進行加熱的方法、進行光照射的方法等。 The viscosity at the time of sealing with a molded resin composition is not particularly limited, but is preferably 3.0 Pa. s or more, more preferably 5.0Pa. s or more. On the other hand, the viscosity is preferably 30.0Pa. Below s, more preferably 20.0Pa. s or less. This can suppress generation of voids. The viscosity can be obtained, for example, with a high-performance flow tester. For molding resin After the product is sealed, the molded resin composition is cured. As a method of hardening a molded resin composition, the method of heating, the method of light irradiation, etc. are mentioned.

成型層40亦可利用固體的壓縮成型樹脂組成物進行成型而形成。即,亦可於模具內藉由加熱加壓將固體的壓縮成型樹脂組成物成型,從而形成成型層40。此處,作為固體的壓縮成型樹脂組成物,可例示將所述熔融樹脂熔融混練、冷卻後,加以顆粒(pallet)化而成的樹脂顆粒。 The molding layer 40 may be formed by molding using a solid compression-molded resin composition. That is, the solid compression-molded resin composition may be molded in the mold by heating and pressing to form the molding layer 40. Here, as the solid compression-molded resin composition, resin pellets obtained by melt-kneading the molten resin, cooling it, and adding pellets are exemplified.

再者,成型層並非必須使用「模」,層壓膜狀的成型樹脂組成物的方法、藉由網版印刷或分配器形成膏狀的成型樹脂組成物的方法、塗佈液狀的成型樹脂組成物並使之硬化的情況等亦包含於本發明的範圍中。 In addition, it is not necessary to use a "mold" for the molding layer, a method of laminating a film-like molding resin composition, a method of forming a paste-like molding resin composition by screen printing or a dispenser, and applying a liquid-state molding resin. The case where the composition is hardened is also included in the scope of the present invention.

於本發明的半導體元件的製造方法中,可利用不使暫時接著劑層藉由反應而硬化的、所謂非反應系的手段形成暫時接著劑層。 In the method for manufacturing a semiconductor device according to the present invention, a temporary adhesive layer can be formed by a so-called non-reactive system without causing the temporary adhesive layer to harden by reaction.

本發明的半導體元件的製造方法中,可於成型層形成後進行100℃以上的熱處理。半導體元件的製造製程中有時會進行100℃以上的熱處理,但本發明可耐受此種高溫處理,就該點而言價值高。加熱處理可於載體基板的剝離前進行,亦可於載體基板或暫時接著劑層的剝離.去除後進行。另外,加熱處理溫度較佳為100℃以上,更佳為110℃以上,進而更佳為140℃以上。上限較佳為260℃以下,更佳為220℃以下。藉由對成型層40進一步進行加熱處理,例如於使用熱硬化性樹脂(較佳為環氧樹脂)作為 成型樹脂組成物的情況下,可充分地進行熱硬化性樹脂的硬化。作為加熱處理時間,可例示10分鐘~10小時。 In the method for manufacturing a semiconductor device of the present invention, a heat treatment at 100 ° C. or higher can be performed after the forming layer is formed. In the manufacturing process of a semiconductor device, a heat treatment of 100 ° C. or higher may be performed. However, the present invention can withstand such a high temperature treatment, and is valuable in this regard. The heat treatment may be performed before the carrier substrate is peeled off, or the carrier substrate or the temporary adhesive layer may be peeled off. Perform after removal. The heat treatment temperature is preferably 100 ° C or higher, more preferably 110 ° C or higher, and even more preferably 140 ° C or higher. The upper limit is preferably 260 ° C or lower, and more preferably 220 ° C or lower. By further heating the molding layer 40, for example, a thermosetting resin (preferably epoxy resin) is used as When the resin composition is molded, the thermosetting resin can be sufficiently cured. Examples of the heat treatment time include 10 minutes to 10 hours.

其次,如圖1的(A4)所示,自積層體剝離載體基板10(此處所述的剝離為包括脫離、分離的主旨)。載體基板10的剝離的方法並無特別限定,較佳為藉由於40℃以下的溫度下的機械性處理而自積層體剝離載體基板10。此時,可僅剝離載體基板,亦可與載體基板一併剝離一層或兩層以上的暫時接著劑層20。 Next, as shown in (A4) of FIG. 1, the carrier substrate 10 is peeled from the laminated body (the peeling described herein includes the principle of separation and separation). The method for peeling the carrier substrate 10 is not particularly limited, and it is preferred that the carrier substrate 10 be peeled from the laminated body by a mechanical treatment at a temperature of 40 ° C. or lower. In this case, only the carrier substrate may be peeled off, or one or two or more temporary adhesive layers 20 may be peeled off together with the carrier substrate.

剝離位置可藉由調節兩層以上的暫時接著劑層中調配的脫模性高的成分的調配量來調整。例如,於欲在載體基板及與載體基板相接的暫時接著劑層之間進行剝離的情況下,可在與所述載體基板相接的暫時接著劑層中更多地調配脫模性高的成分。尤其若脫模性高的成分具有偏向存在性則為有效的。可根據用途等適當規定在積層體的哪一位置處進行剝離。較佳為在載體基板與暫時接著劑層的界面處進行剝離。 The peeling position can be adjusted by adjusting the compounding amount of a component with high releasability formulated in two or more temporary adhesive layers. For example, in a case where peeling is to be performed between the carrier substrate and the temporary adhesive layer in contact with the carrier substrate, a more highly releasable adhesive layer may be blended in the temporary adhesive layer in contact with the carrier substrate. ingredient. In particular, it is effective if a component with high mold releasability has a biased existence. The position of the laminated body can be appropriately determined according to the application and the like. It is preferable to peel at the interface of a carrier substrate and a temporary adhesive layer.

關於剝離,例如較佳為不進行任何處理而自載體基板的端部對成型層向垂直方向拉起以進行剝離。此時,亦較佳為利用刀具等銳利的夾具於載體基板與暫時接著劑層的間隙中切入切口之後再進行剝離。所述分離時的速度較佳為30mm/min~120mm/min,更佳為40mm/min~100mm/min。 Regarding peeling, for example, it is preferred that the molding layer be pulled up from the end portion of the carrier substrate in a vertical direction without any treatment to peel. At this time, it is also preferable to use a sharp jig such as a cutter to cut into the gap between the carrier substrate and the temporary adhesive layer before peeling. The speed during the separation is preferably 30 mm / min to 120 mm / min, and more preferably 40 mm / min to 100 mm / min.

剝離時的溫度較佳為40℃以下,更佳為10℃~40℃,進而更佳為20℃~30℃。 The temperature at the time of peeling is preferably 40 ° C or lower, more preferably 10 ° C to 40 ° C, and even more preferably 20 ° C to 30 ° C.

除所述以外,關於載體基板的剝離,亦可使用剝離液將暫時 接著劑層溶解而自積層體剝離載體基板。作為該情況下的剝離液,可使用溶劑(有機溶劑)。 In addition to the above, the peeling of the carrier substrate may be temporarily Then, the agent layer is dissolved and the carrier substrate is peeled from the laminated body. As the peeling liquid in this case, a solvent (organic solvent) can be used.

於已剝離載體基板的積層體上殘留一層或兩層以上的暫時接著劑層的情況下,通常去除暫時接著劑層。暫時接著劑層的去除較佳為於40℃以下進行。 When one or two or more temporary adhesive layers remain on the laminated body of the peeled carrier substrate, the temporary adhesive layer is usually removed. Removal of the temporary adhesive layer is preferably performed at 40 ° C or lower.

作為暫時接著劑層的去除手段,並無特別規定,可列舉於已剝離載體基板的積層體中,於40℃以下的溫度下機械性去除暫時接著劑層。此處所謂的機械性,是指不進行化學性處理等而進行剝離,為亦包括用手進行剝離的主旨。暫時接著劑層的去除時的溫度較佳為40℃以下,更佳為10℃~40℃,進而更佳為20℃~30℃。為了提高剝離性,亦可照射放射線或進行加熱而使一部分接著劑層變質。 The means for removing the temporary adhesive layer is not particularly limited, and it can be mechanically removed at a temperature of 40 ° C. or lower in the laminated body of the peeled carrier substrate. The term "mechanical property" herein refers to the principle of peeling without performing a chemical treatment or the like, and also includes peeling by hand. The temperature at the time of removing the temporary adhesive layer is preferably 40 ° C or lower, more preferably 10 ° C to 40 ° C, and even more preferably 20 ° C to 30 ° C. In order to improve the releasability, a part of the adhesive layer may be modified by irradiating with radiation or heating.

另外,暫時接著劑層亦可使用溶劑(有機溶劑)進行剝離。 The temporary adhesive layer may be peeled using a solvent (organic solvent).

於暫時接著劑層20附著於載體基板10的情況下,可藉由自載體基板10去除暫時接著劑層20而使載體基板10再生。作為去除暫時接著劑層20的方法,若為膜狀的狀態,則可列舉:藉由刷子、超音波、冰粒子、霧劑(aerosol)的吹附的物理性去除方法;使其溶解於水溶液或有機溶劑而溶解去除的方法;藉由光化射線、放射線、熱的照射而使其分解、氣化的方法等化學性去除方法;根據載體基板,可利用先前已知的清洗方法。 When the temporary adhesive layer 20 is attached to the carrier substrate 10, the carrier substrate 10 can be regenerated by removing the temporary adhesive layer 20 from the carrier substrate 10. As a method for removing the temporary adhesive layer 20, if it is in a film state, a physical removal method by spraying with a brush, ultrasonic waves, ice particles, or aerosol; and dissolving it in an aqueous solution may be mentioned. Or a method of dissolving and removing organic solvents; chemical removal methods such as a method of decomposing and vaporizing by irradiation with actinic rays, radiation, and heat; depending on the carrier substrate, a previously known cleaning method may be used.

例如,於使用元件基板作為載體基板的情況下,可使用先前已知的矽晶圓的清洗方法,例如作為於進行化學性去除時可使用 的水溶液或有機溶劑,可列舉強酸、強鹼、強氧化劑或該些的混合物,具體而言,可列舉:硫酸、鹽酸、氫氟酸、硝酸、有機酸等酸類;四甲基銨、氨、有機鹼等鹼類;過氧化氫等氧化劑;或氨與過氧化氫的混合物、鹽酸與過氧化氫水的混合物、硫酸與過氧化氫水的混合物、氫氟酸與過氧化氫水的混合物、氫氟酸與氟化銨的混合物等。 For example, in the case where an element substrate is used as a carrier substrate, a previously known method for cleaning a silicon wafer can be used, for example, it can be used for chemical removal Examples of the aqueous solution or organic solvent include strong acids, strong bases, strong oxidants, or mixtures thereof. Specific examples include acids such as sulfuric acid, hydrochloric acid, hydrofluoric acid, nitric acid, and organic acids; tetramethylammonium, ammonia, Bases such as organic bases; oxidants such as hydrogen peroxide; or mixtures of ammonia and hydrogen peroxide, mixtures of hydrochloric acid and hydrogen peroxide water, mixtures of sulfuric acid and hydrogen peroxide water, mixtures of hydrofluoric acid and hydrogen peroxide water, A mixture of hydrofluoric acid and ammonium fluoride.

就使用經再生的載體基板的情況下的接著性的觀點而言,較佳為使用載體基板清洗液。 From the viewpoint of adhesiveness when using a regenerated carrier substrate, it is preferable to use a carrier substrate cleaning solution.

載體基板清洗液較佳為包含pKa小於0的酸(強酸)與過氧化氫。作為pKa小於0的酸,可自碘化氫、高氯酸、溴化氫、氯化氫、硝酸、硫酸等無機酸或烷基磺酸、芳基磺酸等有機酸中選擇。就載體基板上的暫時接著劑層的清洗性的觀點而言,較佳為無機酸,最佳為硫酸。 The carrier substrate cleaning solution preferably contains an acid (strong acid) having a pKa of less than 0 and hydrogen peroxide. The acid having a pKa of less than 0 can be selected from inorganic acids such as hydrogen iodide, perchloric acid, hydrogen bromide, hydrogen chloride, nitric acid, and sulfuric acid, or organic acids such as alkylsulfonic acids and arylsulfonic acids. From the viewpoint of the cleanability of the temporary adhesive layer on the carrier substrate, an inorganic acid is preferred, and sulfuric acid is most preferred.

作為過氧化氫,可較佳地使用30質量%的過氧化氫水,所述強酸與30質量%的過氧化氫水的混合比以質量比計較佳為0.1:1~100:1,更佳為1:1~10:1,最佳為3:1~5:1。 As the hydrogen peroxide, 30% by mass of hydrogen peroxide water can be preferably used, and the mixing ratio of the strong acid and 30% by mass of hydrogen peroxide water is preferably 0.1: 1 to 100: 1 by mass ratio, more preferably It is 1: 1 ~ 10: 1, and the best is 3: 1 ~ 5: 1.

其次,於本發明的半導體元件的製造方法中,對用於暫時接著材料組成物的形成的暫時接著劑組成物進行說明。 Next, in the manufacturing method of the semiconductor element of this invention, the temporary adhesive composition for temporarily adhering the formation of a material composition is demonstrated.

<暫時接著劑組成物> <Temporary adhesive composition>

本發明中使用的暫時接著劑層通常可使用暫時接著劑組成物來形成。 The temporary adhesive layer used in the present invention can usually be formed using a temporary adhesive composition.

暫時接著劑組成物較佳為包含樹脂,更佳為包含樹脂與溶 劑。暫時接著劑組成物進而較佳為包含含有氟原子及矽原子中的至少一者的化合物。 The temporary adhesive composition preferably contains a resin, and more preferably contains a resin and a solvent. Agent. The temporary adhesive composition is more preferably a compound containing at least one of a fluorine atom and a silicon atom.

<<樹脂>> << Resin >>

本發明中使用的樹脂較佳為彈性體。藉由使用彈性體,可亦追隨載體基板的微細凹凸,並利用適度的錨固(anchor)效果而形成接著性優異的暫時接著劑層。另外,當將載體基板自積層體剝離時,可不對積層體施加應力地將載體基板自積層體剝離,可防止積層體的破損或剝落。 The resin used in the present invention is preferably an elastomer. By using an elastomer, it is possible to follow the fine unevenness of the carrier substrate, and use a moderate anchor effect to form a temporary adhesive layer having excellent adhesion. In addition, when the carrier substrate is peeled from the laminated body, the carrier substrate can be peeled from the laminated body without applying stress to the laminated body, and damage or peeling of the laminated body can be prevented.

再者,於本說明書中,所謂彈性體是表示顯示出彈性變形的高分子化合物。即,定義為具有如下性質的高分子化合物:當施加外力時,相應於該外力而瞬間發生變形,且去除外力時於短時間內恢復至原來的形狀。 In addition, in this specification, an "elastomer" means a polymer compound which shows elastic deformation. That is, it is defined as a polymer compound having the following properties: when an external force is applied, it instantly deforms in response to the external force, and returns to its original shape in a short time when the external force is removed.

作為暫時接著劑中所含的樹脂,可例示具有苯乙烯結構的熱塑性彈性體、熱塑性矽氧烷聚合物、環烯烴系聚合物、丙烯酸樹脂、聚碳酸酯、聚醚碸、熱塑性聚醯胺、熱塑性聚醯亞胺,較佳為包含具有苯乙烯結構的熱塑性彈性體、熱塑性矽氧烷聚合物、環烯烴系聚合物、丙烯酸樹脂及熱塑性聚醯亞胺中的至少一種,更佳為包含具有苯乙烯結構的熱塑性彈性體、環烯烴系聚合物、各種嵌段共聚物及丙烯酸樹脂中的至少一種,進而更佳為包含具有苯乙烯結構的熱塑性彈性體及環烯烴系聚合物中的至少一種,特佳為包含具有苯乙烯結構的熱塑性彈性體。 Examples of the resin contained in the temporary adhesive include a thermoplastic elastomer having a styrene structure, a thermoplastic silicone polymer, a cycloolefin polymer, an acrylic resin, polycarbonate, polyether fluorene, thermoplastic polyamine, The thermoplastic polyimide preferably contains at least one of a thermoplastic elastomer having a styrene structure, a thermoplastic siloxane polymer, a cycloolefin-based polymer, an acrylic resin, and a thermoplastic polyimide. At least one of a thermoplastic elastomer having a styrene structure, a cycloolefin-based polymer, various block copolymers, and an acrylic resin, and more preferably at least one of a thermoplastic elastomer having a styrene structure and a cycloolefin-based polymer. Particularly preferred is a thermoplastic elastomer containing a styrene structure.

<<<具有苯乙烯結構的熱塑性彈性體>>> <<< Thermoplastic elastomer with styrene structure >>>

暫時接著劑組成物較佳為含有具有苯乙烯結構的熱塑性彈性體。具有苯乙烯結構的熱塑性彈性體並無特別規定,可使用公知的苯乙烯系彈性體。 The temporary adhesive composition preferably contains a thermoplastic elastomer having a styrene structure. The thermoplastic elastomer having a styrene structure is not particularly limited, and a known styrene-based elastomer can be used.

本發明中使用的具有苯乙烯結構的熱塑性彈性體的較佳實施形態為於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X,可例示亦進而包含在所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體Y的情況。 A preferred embodiment of the thermoplastic elastomer having a styrene structure used in the present invention is an elastomer X containing repeating units derived from styrene in all the repeating units in a proportion of 50% by mass or more and 95% by mass or less. The example further includes a case where the elastomer Y includes a repeating unit derived from styrene in a proportion of 10% by mass or more and less than 50% by mass in all the repeating units.

藉由併用彈性體X與彈性體Y而具有優異的剝離性且加工基板的研磨面的平坦性(以下亦稱為平坦研磨性)良好,從而可有效地抑制研磨後的加工基板的翹曲的產生。獲得此種效果的機制可推測為由以下所得者。 By using the elastomer X and the elastomer Y in combination, it has excellent releasability, and the flatness of the polished surface of the processed substrate (hereinafter also referred to as flat abrasiveness) is good, which can effectively suppress the warpage of the processed substrate after polishing produce. The mechanism for obtaining such an effect can be presumed to be the following.

即,所述彈性體X為比較堅硬的材料,因此藉由包含彈性體X,可製造剝離性優異的暫時接著劑層。另外,彈性體Y為比較柔軟的材料,因此容易形成具有彈性的暫時接著劑層。另外,即便對研磨後的積層體進行加熱處理並於其後加以冷卻,亦可藉由暫時接著劑層緩和冷卻時產生的內部應力,從而可有效地抑制翹曲的產生。例如,於形成成型層後將積層體冷卻至室溫為止的過程中,積層體的翹曲藉由應力緩和而減少,可藉由本發明獲得平坦的積層體。 That is, since the elastomer X is a relatively hard material, the inclusion of the elastomer X makes it possible to produce a temporary adhesive layer having excellent peelability. In addition, since the elastomer Y is a relatively soft material, it is easy to form a temporary adhesive layer having elasticity. In addition, even if the laminated body after the polishing is heated and then cooled, the internal stress generated during cooling can be relieved by temporarily adhering the adhesive layer, so that the occurrence of warpage can be effectively suppressed. For example, in the process of cooling the laminated body to room temperature after forming the molding layer, the warpage of the laminated body is reduced by stress relaxation, and a flat laminated body can be obtained by the present invention.

另外,即便於彈性體X中調配彈性體Y,亦存在彈性體X發生相分離的區域等,藉此可充分地達成利用彈性體X的優異的剝 離性。 In addition, even when the elastomer Y is blended in the elastomer X, there is a region in which the elastomer X is phase-separated, etc., and thereby the excellent peeling using the elastomer X can be sufficiently achieved. From sex.

作為具有苯乙烯結構的熱塑性彈性體,並無特別限制,可根據目的而適當選擇。例如可列舉:苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-丁二烯-丁烯-苯乙烯共聚物(SBBS)及該些的氫化物、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物等。 The thermoplastic elastomer having a styrene structure is not particularly limited, and may be appropriately selected depending on the purpose. Examples include: styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butene-styrene block copolymer Segment copolymer (SEBS), styrene-butadiene-butene-styrene copolymer (SBBS) and hydride, styrene-ethylene-propylene-styrene block copolymer (SEPS), styrene -Ethylene-ethylene-propylene-styrene block copolymers and the like.

具有苯乙烯結構的熱塑性彈性體的重量平均分子量較佳為2,000~200,000,更佳為10,000~200,000,進而更佳為50,000~100,000。藉由處於該範圍內,具有苯乙烯結構的熱塑性彈性體於溶劑中的溶解性變得優異,塗佈性提高。另外,於將加工基板自載體基板剝離後,當去除所殘存的暫時接著劑時,於溶劑中的溶解性亦優異,因此存在殘渣並不會殘留於加工基板或載體基板的優點。 The weight average molecular weight of the thermoplastic elastomer having a styrene structure is preferably 2,000 to 200,000, more preferably 10,000 to 200,000, and even more preferably 50,000 to 100,000. By being in this range, the solubility of a thermoplastic elastomer having a styrene structure in a solvent becomes excellent, and coating properties are improved. In addition, after the processing substrate is peeled from the carrier substrate, when the remaining temporary adhesive is removed, the solubility in the solvent is also excellent, so there is an advantage that the residue does not remain on the processing substrate or the carrier substrate.

於本發明中,作為具有苯乙烯結構的熱塑性彈性體,可列舉嵌段共聚物、無規共聚物、接枝共聚物,較佳為嵌段共聚物,更佳為單末端或兩末端是苯乙烯的嵌段共聚物,特佳為兩末端是苯乙烯的嵌段共聚物。若將具有苯乙烯結構的熱塑性彈性體的兩末端設為苯乙烯的嵌段共聚物(源自苯乙烯的重複單元),則存在熱穩定性進一步提高的傾向。其原因在於:耐熱性高的源自苯乙烯的重複單元存在於末端。特別是,藉由源自苯乙烯的重複單元 的嵌段部位為反應性的聚苯乙烯系硬嵌段而存在耐熱性、耐化學品性更優異的傾向,而較佳。另外,認為若將該些設為嵌段共聚物,則於200℃以上時於硬嵌段與軟嵌段中進行相分離。認為該相分離的形狀有助於抑制元件晶圓的加工基板表面的凹凸的產生。此外,就於溶劑中的溶解性及於抗蝕劑溶劑中的耐性的觀點而言,亦更佳為此種熱塑性彈性體。 In the present invention, examples of the thermoplastic elastomer having a styrene structure include a block copolymer, a random copolymer, and a graft copolymer. A block copolymer is preferable, and benzene is preferably used at one or both ends. The block copolymer of ethylene is particularly preferably a block copolymer having styrene at both ends. When the both ends of the thermoplastic elastomer having a styrene structure is a styrene block copolymer (repeating unit derived from styrene), the thermal stability tends to be further improved. The reason is that a repeating unit derived from styrene having high heat resistance exists at the terminal. In particular, with repeating units derived from styrene The block portion is preferably a reactive polystyrene-based hard block, which tends to be more excellent in heat resistance and chemical resistance. In addition, it is considered that when these are block copolymers, phase separation is performed between the hard block and the soft block at 200 ° C or higher. It is thought that this phase-separated shape contributes to suppress generation | occurrence | production of the unevenness | corrugation on the surface of the processing substrate of an element wafer. Moreover, such a thermoplastic elastomer is more preferable from the viewpoint of solubility in a solvent and resistance in a resist solvent.

於本發明中,具有苯乙烯結構的熱塑性彈性體較佳為氫化物。若具有苯乙烯結構的熱塑性彈性體為氫化物,則熱穩定性或保存穩定性提高。進而,剝離性及剝離後的暫時接著劑的清洗去除性提高。再者,所謂氫化物,是指彈性體經氫化(hydrogenation)的結構的聚合物。 In the present invention, the thermoplastic elastomer having a styrene structure is preferably a hydride. When the thermoplastic elastomer having a styrene structure is a hydride, thermal stability or storage stability is improved. Furthermore, the peelability and the cleaning-removability of the temporary adhesive after peeling are improved. The hydride refers to a polymer having a hydrogenated structure of an elastomer.

具有苯乙烯結構的熱塑性彈性體自25℃以20℃/min昇溫的5%熱質量減少溫度較佳為250℃以上,更佳為300℃以上,進而更佳為350℃以上,特佳為400℃以上。另外,上限值並無特別限定,例如較佳為1000℃以下,更佳為800℃以下。根據該態樣,容易形成耐熱性優異的暫時接著劑層。進而,藉由提供耐熱性優異的暫時接著劑層,可對成型層形成後的積層體提供耐熱性賦予,即可對積層體自身進行加熱處理,其後可進行剝離。 The 5% thermal mass reduction temperature of a thermoplastic elastomer having a styrene structure increased from 25 ° C to 20 ° C / min is preferably 250 ° C or higher, more preferably 300 ° C or higher, even more preferably 350 ° C or higher, and particularly preferably 400 Above ℃. The upper limit value is not particularly limited, but is preferably 1000 ° C or lower, more preferably 800 ° C or lower. According to this aspect, it is easy to form a temporary adhesive layer excellent in heat resistance. Furthermore, by providing a temporary adhesive layer excellent in heat resistance, heat resistance can be provided to the laminated body after the forming layer is formed, and the laminated body itself can be heat-treated, and thereafter can be peeled off.

具有苯乙烯結構的熱塑性彈性體較佳為具有如下性質:當將原來的大小設為100%時,於室溫(20℃)下能夠以小的外力使其變形至200%,且當去除外力時,於短時間內恢復至130%以下。 The thermoplastic elastomer having a styrene structure preferably has the following properties: when the original size is set to 100%, it can be deformed to 200% with a small external force at room temperature (20 ° C), and when the external force is removed In a short time, it recovered to below 130%.

作為具有苯乙烯結構的熱塑性彈性體的不飽和雙鍵 量,就加工步驟後的剝離性的觀點而言,較佳為小於15mmol/g,更佳為7mmol/g以下,進而更佳為小於5mmol/g,尤佳為小於0.5mmol/g。關於下限值,並無特別規定,例如可設為0.001mmol/g以上。 Unsaturated double bond as a thermoplastic elastomer with a styrene structure From the viewpoint of peelability after the processing step, the amount is preferably less than 15 mmol / g, more preferably 7 mmol / g or less, still more preferably less than 5 mmol / g, and even more preferably less than 0.5 mmol / g. There is no particular limitation on the lower limit, and it may be, for example, 0.001 mmol / g or more.

再者,此處所述的不飽和雙鍵量並不包含源自苯乙烯的苯環內的不飽和雙鍵。不飽和雙鍵量可藉由核磁共振(Nuclear Magnetic Resonance,NMR)測定而算出。 The amount of unsaturated double bonds described herein does not include unsaturated double bonds derived from the benzene ring derived from styrene. The amount of unsaturated double bonds can be calculated by nuclear magnetic resonance (Nuclear Magnetic Resonance, NMR) measurement.

再者,於本說明書中,所謂「源自苯乙烯的重複單元」是源自苯乙烯或使苯乙烯衍生物聚合時聚合物中所含的苯乙烯的構成單元,可具有取代基。作為苯乙烯衍生物,例如可列舉:α-甲基苯乙烯、3-甲基苯乙烯、4-丙基苯乙烯、4-環己基苯乙烯等。作為取代基,例如可列舉:碳數1~5的烷基、碳數1~5的烷氧基、碳數2~5的烷氧基烷基、乙醯氧基、羧基等。 In the present specification, the "repeated unit derived from styrene" refers to a structural unit derived from styrene or styrene contained in a polymer when a styrene derivative is polymerized, and may have a substituent. Examples of the styrene derivative include α-methylstyrene, 3-methylstyrene, 4-propylstyrene, and 4-cyclohexylstyrene. Examples of the substituent include an alkyl group having 1 to 5 carbons, an alkoxy group having 1 to 5 carbons, an alkoxyalkyl group having 2 to 5 carbons, ethoxyl, carboxyl, and the like.

作為具有苯乙烯結構的熱塑性彈性體的市售品,例如可列舉:塔夫普倫(Tufprene)A、塔夫普倫(Tufprene)125、塔夫普倫(Tufprene)126S、索盧普倫(Solprene)T、阿薩普倫(Asaprene)T-411、阿薩普倫(Asaprene)T-432、阿薩普倫(Asaprene)T-437、阿薩普倫(Asaprene)T-438、阿薩普倫(Asaprene)T-439、塔夫泰科(Tuftec)H1272、塔夫泰科(Tuftec)P1500、塔夫泰科(Tuftec)H1052、塔夫泰科(Tuftec)H1062、塔夫泰科(Tuftec)M1943、塔夫泰科(Tuftec)M1911、塔夫泰科(Tuftec)H1041、塔夫泰科(Tuftec)MP10、塔夫泰科(Tuftec)M1913、塔夫泰科(Tuftec) H1051、塔夫泰科(Tuftec)H1053、塔夫泰科(Tufteo)P2000、塔夫泰科(Tuftec)H1043(以上為商品名、旭化成(股)製造);彈性體(Elastomer)AR-850C、彈性體(Elastomer)AR-815C、彈性體(Elastomer)AR-840C、彈性體(Elastomer)AR-830C、彈性體(Elastomer)AR-860C、彈性體(Elastomer)AR-875C、彈性體(Elastomer)AR-885C、彈性體(Elastomer)AR-SC-15、彈性體(Elastomer)AR-SC-0、彈性體(Elastomer)AR-SC-5、彈性體(Elastomer)AR-710、彈性體(Elastomer)AR-SC-65、彈性體(Elastomer)AR-SC-30、彈性體(Elastomer)AR-SC-75、彈性體(Elastomer)AR-SC-45、彈性體(Elastomer)AR-720、彈性體(Elastomer)AR-741、彈性體(Elastomer)AR-731、彈性體(Elastomer)AR-750、彈性體(Elastomer)AR-760、彈性體(Elastomer)AR-770、彈性體(Elastomer)AR-781、彈性體(Elastomer)AR-791、彈性體(Elastomer)AR-FL-75N、彈性體(Elastomer)AR-FL-85N、彈性體(Elastomer)AR-FL-60N、彈性體(Elastomer)AR-1050、彈性體(Elastomer)AR-1060、彈性體(Elastomer)AR-1040(以上為商品名、亞隆化成(Aronkasei)製造);科騰(Kraton)D1111、科騰(Kraton)D1113、科騰(Kraton)D1114、科騰(Kraton)D1117、科騰(Kraton)D1119、科騰(Kraton)D1124、科騰(Kraton)D1126、科騰(Kraton)D1161、科騰(Kraton)D1162、科騰(Kraton)D1163、科騰(Kraton)D1164、科騰(Kraton)D1165、科騰(Kraton)D1183、科騰(Kraton)D1193、科騰(Kraton) DX406、科騰(Kraton)D4141、科騰(Kraton)D4150、科騰(Kraton)D4153、科騰(Kraton)D4158、科騰(Kraton)D4270、科騰(Kraton)D4271、科騰(Kraton)D4433、科騰(Kraton)D1170、科騰(Kraton)D1171、科騰(Kraton)D1173、卡利庫斯(Cariflex)IR0307、卡利庫斯(Cariflex)IR0310、卡利庫斯(Cariflex)IR0401、科騰(Kraton)D0242、科騰(Kraton)D1101、科騰(Kraton)D1102、科騰(Kraton)D1116、科騰(Kraton)D1118、科騰(Kraton)D1133、科騰(Kraton)D1152、科騰(Kraton)D1153、科騰(Kraton)D1155、科騰(Kraton)D1184、科騰(Kraton)D1186、科騰(Kraton)D1189、科騰(Kraton)D1191、科騰(Kraton)D1192、科騰(Kraton)DX405、科騰(Kraton)DX408、科騰(Kraton)DX410、科騰(Kraton)DX414、科騰(Kraton)DX415、科騰(Kraton)A1535、科騰(Kraton)A1536、科騰(Kraton)FG1901、科騰(Kraton)FG1924、科騰(Kraton)G1640、科騰(Kraton)G1641、科騰(Kraton)G1642、科騰(Kraton)G1643、科騰(Kraton)G1645、科騰(Kraton)G1633、科騰(Kraton)G1650、科騰(Kraton)G1651、科騰(Kraton)G1652、科騰(Kraton)G1654、科騰(Kraton)G1657、科騰(Kraton)G1660、科騰(Kraton)G1726、科騰(Kraton)G1701、科騰(Kraton)G1702、科騰(Kraton)G1730、科騰(Kraton)G1750、科騰(Kraton)G1765、科騰(Kraton)G4609、科騰(Kraton)G4610(以上為商品名、科騰(Kraton)公司製造);TR2000、TR2001、TR2003、TR2250、TR2500、TR2601、TR2630、TR2787、 TR2827、TR1086、TR1600、SIS5002、SIS5200、SIS5250、SIS5405、SIS5505、戴納隆(Dynaron)6100P、戴納隆(Dynaron)4600P、戴納隆(Dynaron)6200P、戴納隆(Dynaron)4630P、戴納隆(Dynaron)8601P、戴納隆(Dynaron)8630P、戴納隆(Dynaron)8600P、戴納隆(Dynaron)8903P、戴納隆(Dynaron)6201B、戴納隆(Dynaron)1321P、戴納隆(Dynaron)1320P、戴納隆(Dynaron)2324P、戴納隆(Dynaron)9901P(以上為商品名、JSR(股)製造);登卡(Denka)STR系列(以上為商品名、電化學工業(股)製造);昆塔克(Quintac)3520、昆塔克(Quintac)3433N、昆塔克(Quintac)3421、昆塔克(Quintac)3620、昆塔克(Quintac)3450、昆塔克(Quintac)3460(日本瑞翁(ZEON)製造);TPE-SB系列(以上為商品名、住友化學(股)製造);拉巴隆(Rabalon)系列(以上為商品名、三菱化學(股)製造);賽普頓(Septon)1001、賽普頓(Septon)8004、賽普頓(Septon)4033、賽普頓(Septon)2104、賽普頓(Septon)8007、賽普頓(Septon)2007、賽普頓(Septon)2004、賽普頓(Septon)2063、賽普頓(Septon)HG252、賽普頓(Septon)8076、賽普頓(Septon)2002、賽普頓(Septon)1020、賽普頓(Septon)8104、賽普頓(Septon)2005、賽普頓(Septon)2006、賽普頓(Septon)4055、賽普頓(Septon)4044、賽普頓(Septon)4077、賽普頓(Septon)4099、賽普頓(Septon)8006、賽普頓(Septon)V9461、賽普頓(Septon)V9475、賽普頓(Septon)V9827、海布拉(Hybrar)7311、海布拉(Hybrar)7125、海布拉(Hybrar)5127、 海布拉(Hybrar)5125(以上為商品名、可樂麗(Kuraray)製造);蘇米庫斯(Sumiflex)(以上為商品名、住友貝克萊特(Sumitomo Bakelite)(股)製造);萊奧斯托瑪(Leostomer)、艾庫塔馬(Actymer)(以上為商品名、理研乙烯工業製造)等。 Examples of commercially available thermoplastic elastomers having a styrene structure include Tufprene A, Tufprene 125, Tufprene 126S, and Soluprene ( Solprene T, Asaprene T-411, Asaprene T-432, Asaprene T-437, Asaprene T-438, Asa Asaprene T-439, Tuftec H1272, Tuftec P1500, Tuftec H1052, Tuftec H1062, Tuftec ( Tuftec) M1943, Tuftec M1911, Tuftec H1041, Tuftec MP10, Tuftec M1913, Tuftec H1051, Tuftec H1053, Tufteo P2000, Tuftec H1043 (the above are the trade names, manufactured by Asahi Kasei Corporation); Elastomer AR-850C, Elastomer AR-815C, Elastomer AR-840C, Elastomer AR-830C, Elastomer AR-860C, Elastomer AR-875C, Elastomer AR-885C, Elastomer AR-SC-15, Elastomer AR-SC-0, Elastomer AR-SC-5, Elastomer AR-710, Elastomer ) AR-SC-65, Elastomer AR-SC-30, Elastomer AR-SC-75, Elastomer AR-SC-45, Elastomer AR-720, Elasticity Elastomer AR-741, Elastomer AR-731, Elastomer AR-750, Elastomer AR-760, Elastomer AR-770, Elastomer AR -781, Elastomer AR-791, Elastomer AR-FL-75N, Elastomer AR-FL-85N, Elastomer AR-FL-60N, Elastomer AR-1050, Elastomer AR-1060, Elastomer AR- 1040 (above are trade names, manufactured by Aronkasei); Kraton D1111, Kraton D1113, Kraton D1114, Kraton D1117, Kraton D1119 Kraton D1124, Kraton D1126, Kraton D1161, Kraton D1162, Kraton D1163, Kraton D1164, Kraton D1165, Kraton D1183, Kraton D1193, Kraton DX406, Kraton D4141, Kraton D4150, Kraton D4153, Kraton D4158, Kraton D4270, Kraton D4271, Kraton D4433 Kraton D1170, Kraton D1171, Kraton D1173, Cariflex IR0307, Cariflex IR0310, Cariflex IR0401, Kraton D0242, Kraton D1101, Kraton D1102, Kraton D1116, Kraton D1118, Kraton D1133, Kraton D1152, Kraton (Kraton) D1153, Kraton D1155, Kraton D1184, Kraton D1186, Kraton D1189, Kraton D1191, Kraton D1192, Kraton ( Kraton DX405, Kraton DX408, Kraton DX410, Kraton DX414, Kraton DX415, Kraton A1535, Kraton A1536, Kraton ) FG1901, Kraton FG1924, Kraton G1640, Kraton G1641, Kraton G1642, Kraton G1643, Kraton G1645, Kraton G1633, Kraton G1650, Kraton G16 51, Kraton G1652, Kraton G1654, Kraton G1657, Kraton G1660, Kraton G1726, Kraton G1701, Kraton G1702 , Kraton G1730, Kraton G1750, Kraton G1765, Kraton G4609, Kraton G4610 (the above are the trade names, manufactured by Kraton); TR2000, TR2001, TR2003, TR2250, TR2500, TR2601, TR2630, TR2787, TR2827, TR1086, TR1600, SIS5002, SIS5200, SIS5250, SIS5405, SIS5505, Dynaron 6100P, Dynaron 4600P, Dynaron 6200P, Dynaron 4630P, Dynar Dynaron 8601P, Dynaron 8630P, Dynaron 8600P, Dynaron 8903P, Dynaron 6201B, Dynaron 1321P, Dynaron Dynaron) 1320P, Dynaron 2324P, Dynaron 9901P (the above are the trade names, manufactured by JSR (stock)); Denka STR series (the above are the trade names, electrochemical industry (stock )); Quintac 3520, Quintac 3433N, Quintac 3421, Quintac 3620, Quintac 3450, Quintac 3460 (manufactured by ZEON, Japan); TPE-SB series (the above are the trade names, manufactured by Sumitomo Chemical Co., Ltd.); Rabalon series (the above are the trade names, manufactured by Mitsubishi Chemical Corporation); Sai Septon 1001, Septon 8004, Septon 4033, Septon 2104, Septon 8007, Septon 2007, Septon (Septon) 20 04, Septon 2063, Septon HG252, Septon 8076, Septon 2002, Septon 1020, Septon 8104, Septon 2005, Septon 2006, Septon 4055, Septon 4044, Septon 4077, Septon 4099, Sepp Septon 8006, Septon V9461, Septon V9475, Septon V9827, Hybrar 7311, Hybrar 7125, Hybron ( Hybrar) 5127, Hybrar 5125 (above the trade name, manufactured by Kuraray); Sumiflex (above the trade name, manufactured by Sumitomo Bakelite (shares)); Leos Leostomer, Actymer (the above are trade names, manufactured by Riken Ethylene Industry), etc.

其次,對「彈性體X」中的特有的較佳範圍進行敘述。 Next, a preferable range peculiar to "Elastomer X" will be described.

彈性體X為於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體,源自苯乙烯的重複單元的含量較佳為超過50質量%且95質量%以下,更佳為50質量%~90質量%,進而更佳為50質量%~80質量%,特佳為55質量%~75質量%,尤佳為56質量%~70質量%。 Elastomer X is an elastomer containing repeating units derived from styrene in a proportion of 50% by mass to 95% by mass of all repeating units. The content of repeating units derived from styrene is preferably more than 50% by mass and 95% by mass or less, more preferably 50% by mass to 90% by mass, even more preferably 50% by mass to 80% by mass, particularly preferably 55% by mass to 75% by mass, and even more preferably 56% by mass to 70% by mass.

彈性體X的硬度較佳為83以上,更佳為85以上,進而更佳為90以上。上限值並無特別規定,例如為99以下。再者,硬度是依據JIS(日本工業標準)K6253的方法並利用A型硬度計進行測定而得的值。 The hardness of the elastomer X is preferably 83 or more, more preferably 85 or more, and even more preferably 90 or more. The upper limit value is not particularly limited, and is, for example, 99 or less. The hardness is a value obtained by measuring with a type A hardness tester in accordance with the method of JIS (Japanese Industrial Standard) K6253.

其次,對「彈性體Y」中的特有的較佳範圍進行敘述。 Next, the preferable range peculiar to "elastomer Y" is described.

彈性體Y為於所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體,源自苯乙烯的重複單元的含量較佳為10質量%~45質量%,更佳為10質量%~40質量%,進而更佳為12質量%~35質量%,特佳為13質量%~33質量%。 Elastomer Y is an elastomer containing repeating units derived from styrene in a proportion of 10% by mass or more and less than 50% by mass of all repeating units, and the content of repeating units derived from styrene is preferably 10% to 45% Mass%, more preferably 10% to 40% by mass, even more preferably 12% to 35% by mass, and particularly preferably 13% to 33% by mass.

彈性體Y的硬度較佳為82以下,更佳為80以下,進而更佳為78以下。下限值並無特別規定,但為1以上。 The hardness of the elastomer Y is preferably 82 or less, more preferably 80 or less, and even more preferably 78 or less. The lower limit value is not particularly specified, but is 1 or more.

另外,彈性體X的硬度與彈性體Y的硬度之差較佳為5~40,更佳為10~35,進而更佳為15~33,特佳為17~29。藉由設為此種範圍,本發明的效果更有效地得到發揮。 The difference between the hardness of the elastomer X and the hardness of the elastomer Y is preferably 5 to 40, more preferably 10 to 35, still more preferably 15 to 33, and particularly preferably 17 to 29. By setting it as such a range, the effect of this invention is exhibited more effectively.

本發明中亦可調配彈性體X及彈性體Y以外的其他彈性體。作為其他彈性體,可使用聚酯系彈性體、聚烯烴系彈性體、聚胺基甲酸酯系彈性體、聚醯胺系彈性體、聚丙烯酸系彈性體、矽酮系彈性體、聚醯亞胺系彈性體等。 In the present invention, elastomers other than the elastomer X and the elastomer Y may be blended. As other elastomers, polyester-based elastomers, polyolefin-based elastomers, polyurethane-based elastomers, polyamide-based elastomers, polyacrylic-based elastomers, silicone-based elastomers, and polyfluorenes can be used. Imine elastomer and the like.

相對於除了溶劑以外的暫時接著劑組成物的質量,本發明中使用的暫時接著劑組成物中的彈性體X、彈性體Y及其他彈性體的合計量較佳為50.00質量%~99.99質量%,更佳為70.00質量%~99.99質量%,特佳為88.00質量%~99.99質量%。若彈性體的含量為所述範圍,則接著性及剝離性更優異。 The total amount of the elastomer X, the elastomer Y, and other elastomers in the temporary adhesive composition used in the present invention is preferably 50.00% to 99.99% by mass relative to the mass of the temporary adhesive composition other than the solvent. , More preferably 70.00% to 99.99% by mass, and particularly preferably 88.00% to 99.99% by mass. When content of an elastomer is the said range, adhesiveness and peelability will be more excellent.

另外,本發明中使用的暫時接著劑組成物中的彈性體X、彈性體Y及其他彈性體分別可為多種的組合。 In addition, the elastomer X, the elastomer Y, and other elastomers in the temporary adhesive composition used in the present invention may be various combinations.

本發明中使用的暫時接著劑組成物中所含的彈性體的含量中,彈性體X與彈性體Y的合計量較佳為佔整體的90質量%以上,更佳為佔95質量%以上,特佳為佔98質量%以上。 In the content of the elastomer contained in the temporary adhesive composition used in the present invention, the total amount of the elastomer X and the elastomer Y is preferably 90% by mass or more, and more preferably 95% by mass or more. Particularly preferred is 98% by mass or more.

於調配彈性體Y的情況下,所述彈性體X與所述彈性體Y的質量比較佳為彈性體X:彈性體Y=5:95~95:5,更佳為20:80~90:10,特佳為40:60~85:15。若為所述範圍,則更有效地抑制翹曲及獲得剝離性。 In the case of blending the elastomer Y, the quality of the elastomer X and the elastomer Y is better as the elastomer X: the elastomer Y = 5: 95 ~ 95: 5, more preferably 20: 80 ~ 90: 10, especially good for 40: 60 ~ 85: 15. If it is the said range, it will be more effective to suppress a curvature and to obtain peelability.

<<<熱塑性矽氧烷聚合物>>> <<< thermoplastic silicone polymer >>>

暫時接著劑組成物可使用熱塑性矽氧烷聚合物作為樹脂成分。 The temporary adhesive composition may use a thermoplastic siloxane polymer as a resin component.

熱塑性矽氧烷聚合物為含有R21R22R23SiO1/2單元(R21、R22、R23分別為未經取代或經取代的碳原子數1~10的一價烴基或羥基)及SiO4/2單元且所述R21R22R23SiO1/2單元/SiO4/2單元的莫耳比為0.6~1.7的有機聚矽氧烷與下述通式(1)所表示的有機聚矽氧烷部分性地進行脫水縮合而成者,較佳為所述經脫水縮合的有機聚矽氧烷與下述通式(1)所表示的有機聚矽氧烷的比率為99:1~50:50,且重量平均分子量為200,000~1,500,000。 The thermoplastic siloxane polymer contains R 21 R 22 R 23 SiO 1/2 units (R 21 , R 22 , and R 23 are unsubstituted or substituted monovalent hydrocarbon groups having 1 to 10 carbon atoms or hydroxyl groups, respectively) And an SiO 4/2 unit and an organopolysiloxane having a molar ratio of 0.6 to 1.7 of the R 21 R 22 R 23 SiO 1/2 unit / SiO 4/2 unit and the following general formula (1) It is preferable that the organic polysiloxane is partially dehydrated and condensed, and the ratio of the dehydrated and condensed organic polysiloxane to the organic polysiloxane represented by the following general formula (1) is 99. : 1 to 50: 50, and the weight average molecular weight is 200,000 to 1,500,000.

(式中,R11及R12分別表示未經取代或經取代的碳原子數1~10的一價烴基,n為5000~10000) (Wherein R 11 and R 12 each represent an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and n is 5000 to 10,000)

若為此種熱塑性矽氧烷,則接著性、耐熱性優異,故而較佳。 If it is such a thermoplastic siloxane, since it is excellent in adhesiveness and heat resistance, it is preferable.

所述通式(1)中,有機取代基R11、R12為未經取代或經取代的碳原子數1~10的一價烴基,具體而言為:甲基、乙基、 正丙基、異丙基、正丁基、第三丁基、正戊基、環戊基、正己基等烷基;環己基等環烷基;苯基、甲苯基等芳基等烴基;該些的氫原子的一部分或全部經鹵素原子取代的基;較佳為甲基及苯基。 In the general formula (1), the organic substituents R 11 and R 12 are unsubstituted or substituted monovalent hydrocarbon groups having 1 to 10 carbon atoms, specifically: methyl, ethyl, and n-propyl , Isopropyl, n-butyl, third butyl, n-pentyl, cyclopentyl, n-hexyl and other alkyl groups; cycloalkyl such as cyclohexyl; hydrocarbon groups such as aryl such as phenyl and tolyl; these hydrogens A group in which part or all of the atoms are substituted with a halogen atom; methyl and phenyl are preferred.

熱塑性有機聚矽氧烷的重量平均分子量為200,000以上,更佳為350,000以上,且為1,500,000以下,更佳為1,000,000以下。進而,較佳為分子量為740以下的低分子量成分含量為0.5質量%以下,更佳為0.1質量%以下。 The weight average molecular weight of the thermoplastic organic polysiloxane is 200,000 or more, more preferably 350,000 or more, and 1,500,000 or less, and more preferably 1,000,000 or less. The content of the low-molecular-weight component having a molecular weight of 740 or less is preferably 0.5% by mass or less, and more preferably 0.1% by mass or less.

作為市售品,可例示西萊斯(SILRES)604(旭化成瓦克矽酮(Asahi Kasei Wacker Silicone))。 As a commercial item, SILRES 604 (Asahi Kasei Wacker Silicone) is exemplified.

<<<環烯烴系聚合物>>> <<< Cycloolefin polymer >>>

作為環烯烴系聚合物,可列舉:降冰片烯系聚合物、單環的環狀烯烴的聚合物、環狀共軛二烯的聚合物、乙烯基脂環式烴聚合物及該些聚合物的氫化物等。作為環烯烴系聚合物的較佳例,可列舉包含至少一種以上的下述通式(II)所表示的重複單元的加成(共)聚合物、及進而包含通式(I)所表示的重複單元的至少一種以上而成的加成(共)聚合物。另外,作為環烯烴系聚合物的其他較佳例,可列舉包含至少一種通式(III)所表示的環狀重複單元的開環(共)聚合物。 Examples of the cycloolefin-based polymer include a norbornene-based polymer, a polymer of a monocyclic cyclic olefin, a polymer of a cyclic conjugated diene, a vinyl alicyclic hydrocarbon polymer, and these polymers Hydride and so on. Preferred examples of the cycloolefin-based polymer include an addition (co) polymer including at least one or more repeating units represented by the following general formula (II), and further containing an addition (co) polymer represented by the general formula (I). An addition (co) polymer composed of at least one or more repeating units. In addition, as another preferable example of the cycloolefin-based polymer, a ring-opened (co) polymer including at least one cyclic repeating unit represented by the general formula (III) is mentioned.

[化2] [Chemical 2]

式中,m表示0~4的整數。R1~R6分別表示氫原子或碳數1~10的烴基,X1~X3及Y1~Y3分別表示氫原子、碳數1~10的烴基、鹵素原子、經鹵素原子取代的碳數1~10的烴基、-(CH2)nCOOR11、-(CH2)nOCOR12、-(CH2)nNCO、-(CH2)nNO2、-(CH2)nCN、-(CH2)nCONR13R14、-(CH2)nNR15R16、-(CH2)nOZ、-(CH2)nW、或者由X1與Y1、X2與Y2或X3與Y3構成的(-CO)2O、(-CO)2NR17。R11、R12、R13、R14、R15、R16及R17分別表示氫原子或烴基(較佳為碳數1~20的烴基),Z表示烴基或經鹵素取代的烴基,W表示SiR18 pD3-p(R18表示碳數1~10的烴基,D表示鹵素原子且表示-OCOR18或-OR18,p表示0~3的整數)。n表示0~10的整數。 In the formula, m represents an integer of 0 to 4. R 1 to R 6 each represent a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms, X 1 to X 3 and Y 1 to Y 3 each represent a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a halogen atom, or a halogen atom substituted C1-C10 hydrocarbon group,-(CH 2 ) nCOOR 11 ,-(CH 2 ) nOCOR 12 ,-(CH 2 ) nNCO,-(CH 2 ) nNO 2 ,-(CH 2 ) nCN,-(CH 2 ) nCONR 13 R 14 ,-(CH 2 ) nNR 15 R 16 ,-(CH 2 ) nOZ,-(CH 2 ) nW, or X 1 and Y 1 , X 2 and Y 2 or X 3 and Y 3 (-CO) 2 O, (-CO) 2 NR 17 . R 11 , R 12 , R 13 , R 14 , R 15 , R 16 and R 17 each represent a hydrogen atom or a hydrocarbon group (preferably a hydrocarbon group having 1 to 20 carbon atoms), Z represents a hydrocarbon group or a halogen-substituted hydrocarbon group, W Represents SiR 18 p D 3-p (R 18 represents a hydrocarbon group having 1 to 10 carbon atoms, D represents a halogen atom and represents -OCOR 18 or -OR 18 , and p represents an integer of 0 to 3). n represents an integer from 0 to 10.

降冰片烯系聚合物於日本專利特開平10-7732號公報、日本專利特表2002-504184號公報、US2004/229157A1號公報或WO2004/070463A1號公報等中有所揭示。降冰片烯系聚合物可藉由使降冰片烯系多環狀不飽和化合物彼此進行加成聚合而獲得。另外,視需要亦可使降冰片烯系多環狀不飽和化合物與乙烯、丙 烯、丁烯、如丁二烯、異戊二烯般的共軛二烯、如亞乙基降冰片烯般的非共軛二烯進行加成聚合。該降冰片烯系聚合物是由三井化學(股)以艾佩魯(Apel)的商品名銷售,存在玻璃轉移溫度(Tg)不同的例如APL8008T(Tg70℃)、APL6013T(Tg125℃)或APL6015T(Tg145℃)等等級。由寶理塑膠(Poly plastic)(股)銷售有TOPAS8007、TOPAS5013、TOPAS6013、TOPAS6015等顆粒(pellet)。 The norbornene-based polymer is disclosed in Japanese Patent Laid-Open No. 10-7732, Japanese Patent Laid-Open No. 2002-504184, US2004 / 229157A1, or WO2004 / 070463A1. A norbornene-based polymer can be obtained by addition polymerization of a norbornene-based polycyclic unsaturated compound with each other. In addition, if necessary, the norbornene-based polycyclic unsaturated compound may be used with ethylene and propylene. The olefin, butene, conjugated diene such as butadiene, isoprene, and non-conjugated diene such as ethylene norbornene are subjected to addition polymerization. This norbornene-based polymer is sold by Mitsui Chemicals Co., Ltd. under the trade name of Apel, and has different glass transition temperatures (Tg) such as APL8008T (Tg70 ° C), APL6013T (Tg125 ° C), or APL6015T ( Tg145 ° C) and other grades. Poly plastics (stocks) sell TOPAS8007, TOPAS5013, TOPAS6013, TOPAS6015 and other pellets.

進而,由富蘭尼(Ferrania)公司銷售有艾碧爾(Appear)3000。 Furthermore, Appear 3000 is sold by Ferrania.

降冰片烯系聚合物的氫化物可如日本專利特開平1-240517號公報、日本專利特開平7-196736號公報、日本專利特開昭60-26024號公報、日本專利特開昭62-19801號公報、日本專利特開2003-1159767號公報或日本專利特開2004-309979號公報等中所揭示般,藉由於使多環狀不飽和化合物加成聚合或開環移位聚合後進行氫化而製造。 The hydrides of the norbornene-based polymer can be, for example, Japanese Patent Laid-Open No. 1-240517, Japanese Patent Laid-Open No. 7-176736, Japanese Patent Laid-Open No. 60-26024, and Japanese Patent Laid-Open No. 62-19801. As disclosed in Japanese Unexamined Patent Publication, Japanese Patent Laid-Open No. 2003-1159767, Japanese Patent Laid-Open No. 2004-309979, and the like, polyhydric unsaturated compounds are subjected to hydrogenation after addition polymerization or ring-opening shift polymerization, followed by hydrogenation. Manufacturing.

所述通式(III)中,R5及R6較佳為氫原子或甲基,X3及Y3較佳為氫原子,可適當選擇其他基。該降冰片烯系聚合物由JSR(股)以亞頓(Arton)G或亞頓(Arton)F的商品名進行銷售,且由日本瑞翁(ZEON)以瑞諾(Zeonor)ZF14、ZF16、瑞諾斯(Zeonex)250、瑞諾斯(Zeonex)280、瑞諾斯(Zeonex)480R的商品名進行市售,亦可使用該些。 In the general formula (III), R 5 and R 6 are preferably a hydrogen atom or a methyl group, X 3 and Y 3 are preferably a hydrogen atom, and other groups may be appropriately selected. This norbornene-based polymer is sold by JSR (stock) under the trade names of Arton G or Arton F, and is sold by Zeon of Japan as Zeonor ZF14, ZF16, Zeonex 250, Zeonex 280, and Zeonex 480R are commercially available under the trade names, and these may also be used.

環烯烴系聚合物的利用凝膠滲透層析法(GPC)所得的聚苯乙烯換算的重量平均分子量較佳為10,000~1,000,000,更佳 為50,000~500,000,進而更佳為100,000~300,000。 The polystyrene-equivalent weight average molecular weight of the cycloolefin-based polymer obtained by gel permeation chromatography (GPC) is preferably 10,000 to 1,000,000, and more preferably It is 50,000 to 500,000, and more preferably 100,000 to 300,000.

另外,作為本發明中所使用的環烯烴系聚合物,亦可例示日本專利特開2013-241568號公報的段落0039~段落0052所記載的環烯烴系聚合物,該些內容被併入至本說明書中。 In addition, as the cycloolefin-based polymer used in the present invention, a cycloolefin-based polymer described in paragraphs 0039 to 0052 of Japanese Patent Laid-Open No. 2013-241568 can also be exemplified, and these contents are incorporated herein In the manual.

<<<丙烯酸樹脂>>> <<< acrylic resin >>>

本發明中的丙烯酸樹脂為對(甲基)丙烯酸酯單體進行聚合而獲得的樹脂。 The acrylic resin in the present invention is a resin obtained by polymerizing a (meth) acrylate monomer.

作為(甲基)丙烯酸酯單體,可例示:(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸己酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸正癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸苯基酯、(甲基)丙烯酸苄基酯、及(甲基)丙烯酸2-甲基丁酯。 Examples of the (meth) acrylate monomer include 2-ethylhexyl (meth) acrylate, ethyl (meth) acrylate, methyl (meth) acrylate, n-propyl (meth) acrylate, Isopropyl (meth) acrylate, amyl (meth) acrylate, n-octyl (meth) acrylate, isooctyl (meth) acrylate, isononyl (meth) acrylate, n- (meth) acrylate Butyl, isobutyl (meth) acrylate, hexyl (meth) acrylate, n-nonyl (meth) acrylate, iso-amyl (meth) acrylate, n-decyl (meth) acrylate, (meth) ) Isodecyl acrylate, dodecyl (meth) acrylate, isobornyl (meth) acrylate, cyclohexyl (meth) acrylate, phenyl (meth) acrylate, benzyl (meth) acrylate Ester, and 2-methylbutyl (meth) acrylate.

另外,亦可於不超出本發明的主旨的範圍內,對其他單體進行共聚。於對其他單體進行共聚的情況下,較佳為所有單體的10莫耳%以下。 In addition, other monomers may be copolymerized within a range not exceeding the gist of the present invention. In the case of copolymerizing other monomers, it is preferably 10 mol% or less of all monomers.

另外,本發明中亦較佳為於側鏈具有有機聚矽氧烷的丙烯酸樹脂。作為於側鏈具有有機聚矽氧烷的樹脂,可列舉下述式(3)所表示者。 In addition, in the present invention, an acrylic resin having an organic polysiloxane in a side chain is also preferable. Examples of the resin having an organic polysiloxane in the side chain include those represented by the following formula (3).

式(3) Equation (3)

所述式(3)中,R1於具有多個的情況下,可相同亦可不同,表示CH3、C2H5、CH3(CH2)2或CH3(CH2)3。R2於具有多個的情況下,可相同亦可不同,表示H、CH3、C2H5、CH3(CH2)2或CH3(CH2)3。R3於具有多個的情況下,可相同亦可不同,表示H或CH3。R4於具有多個的情況下,可相同亦可不同,表示H、CH3、C2H5、CH3(CH2)2、CH3(CH2)3、或經選自由環氧基、羥基、羧基、胺基、烷氧基、乙烯基、矽烷醇基及異氰酸酯基所組成的群組中的至少一種官能基取代的碳數1~6的烷基。 In the formula (3), when there are a plurality of R 1 , they may be the same or different, and represent CH 3 , C 2 H 5 , CH 3 (CH 2 ) 2 or CH 3 (CH 2 ) 3 . When there are a plurality of R 2 , they may be the same or different, and represent H, CH 3 , C 2 H 5 , CH 3 (CH 2 ) 2 or CH 3 (CH 2 ) 3 . When R 3 is plural, they may be the same or different, and represent H or CH 3 . When R 4 is plural, it may be the same or different, and represents H, CH 3 , C 2 H 5 , CH 3 (CH 2 ) 2 , CH 3 (CH 2 ) 3 , or R 4. An alkyl group having 1 to 6 carbon atoms substituted with at least one functional group in the group consisting of hydroxy, carboxyl, amine, alkoxy, vinyl, silanol, and isocyanate groups.

a為50~150,b為50~150,c為80~600。另外,m為1~10。 a is 50 to 150, b is 50 to 150, and c is 80 to 600. In addition, m is 1 to 10.

作為於側鏈具有有機聚矽氧烷的丙烯酸樹脂的具體例,可列舉:信越化學工業(股)製造的矽酮接枝丙烯酸樹脂,商品名:X-24-798A、X-22-8004(R4:C2H4OH,官能基當量:3250(g/mol))、X-22-8009(R4:含有Si(OCH3)3的烷基,官能基當量:6200 (g/mol))、X-22-8053(R4:H,官能基當量:900(g/mol))、X-22-8084、X-22-8084EM、X-22-8195(R4:H,官能基當量:2700(g/mol));東亞合成(股)製造的塞瑪庫(Symac)系列(US-270、US-350、US-352、US-380、US-413、US-450等)、萊則特(rezeta)GS-1000系列(GS-1015、GS-1302等)等。 Specific examples of the acrylic resin having an organic polysiloxane in the side chain include a silicone-grafted acrylic resin manufactured by Shin-Etsu Chemical Industry Co., Ltd., trade names: X-24-798A, X-22-8004 ( R 4 : C 2 H 4 OH, functional group equivalent: 3250 (g / mol), X-22-8009 (R 4 : alkyl group containing Si (OCH 3 ) 3 , functional group equivalent: 6200 (g / mol )), X-22-8053 (R 4 : H, functional group equivalent: 900 (g / mol)), X-22-8084, X-22-8084EM, X-22-8195 (R 4 : H, functional Base equivalent: 2700 (g / mol)); Symac series (US-270, US-350, US-352, US-380, US-413, US-450, etc.) manufactured by East Asia Synthesis ), Rezeta GS-1000 series (GS-1015, GS-1302, etc.) and so on.

另外,除所述以外,可例示三菱麗陽(股)製造的壓克培特(acrypet)MF 001等。 In addition to the above, examples include acryl MF 001 manufactured by Mitsubishi Rayon Corporation.

本發明中使用的暫時接著劑組成物較佳為固體成分的50質量%~100質量%為樹脂,更佳為70質量%~100質量%為樹脂。 The temporary adhesive composition used in the present invention is preferably 50% by mass to 100% by mass of a solid resin, and more preferably 70% by mass to 100% by mass of a resin.

本發明中使用的暫時接著劑組成物可僅包含一種樹脂,亦可包含兩種以上。於包含兩種以上的情況下,較佳為合計量為所述範圍。 The temporary adhesive composition used in the present invention may contain only one resin or two or more resins. When two or more types are included, the total amount is preferably within the range.

<<溶劑>> << Solvent >>

本發明中使用的暫時接著劑組成物較佳為含有溶劑。於藉由塗佈本發明中使用的暫時接著劑組成物來形成暫時接著劑層的情況下,較佳為調配溶劑。溶劑可不受限制地使用公知者,較佳為有機溶劑。 The temporary adhesive composition used in the present invention preferably contains a solvent. When the temporary adhesive layer is formed by applying the temporary adhesive composition used in the present invention, it is preferable to prepare a solvent. A known solvent can be used without limitation, and an organic solvent is preferred.

作為有機溶劑,可較佳地列舉:乙酸乙酯、乙酸-正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、乙酸異丁酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、烷基氧基乙酸烷基酯(例如:烷基氧基乙酸甲酯、烷基氧基乙酸乙酯、 烷基氧基乙酸丁酯(例如甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷基氧基丙酸烷基酯類(例如:3-烷基氧基丙酸甲酯、3-烷基氧基丙酸乙酯等(例如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷基氧基丙酸烷基酯類(例如:2-烷基氧基丙酸甲酯、2-烷基氧基丙酸乙酯、2-烷基氧基丙酸丙酯等(例如2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷基氧基-2-甲基丙酸甲酯及2-烷基氧基-2-甲基丙酸乙酯(例如2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯、1-甲氧基-2-丙基乙酸酯等酯類;二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等醚類;甲基乙基酮、環己酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮、γ-丁內酯等酮類;甲苯、二甲苯、苯甲醚、均三甲苯、乙基苯、丙基苯、枯烯、正丁基苯、第二丁基苯、異丁基苯、第三丁基苯、戊基苯、異戊基苯、(2,2-二甲基丙基)苯、1-苯基己烷、1-苯基庚烷、1-苯基辛烷、1-苯基壬烷、1-苯基癸烷、環丙基苯、環己基苯、2-乙基甲苯、 1,2-二乙基苯、鄰-異丙基甲苯、茚滿、1,2,3,4-四氫萘、3-乙基甲苯、間-異丙基甲苯、1,3-二異丙基苯、4-乙基甲苯、1,4-二乙基苯、對-異丙基甲苯、1,4-二異丙基苯、4-第三丁基甲苯、1,4-二-第三丁基苯、1,3-二乙基苯、1,2,3-三甲基苯、1,2,4-三甲基苯、4-第三丁基-鄰二甲苯、1,2,4-三乙基苯、1,3,5-三乙基苯、1,3,5-三異丙基苯、5-第三丁基-間二甲苯、3,5-二-第三丁基甲苯、1,2,3,5-四甲基苯、1,2,4,5-四甲基苯、五甲基苯等芳香族烴類;檸檬烯、對薄荷烷、壬烷、癸烷、十二烷、十氫萘等烴類等。 As the organic solvent, ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, Ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, alkyl alkoxyacetate (for example: methyl alkoxyacetate, ethyl alkoxyacetate, Alkyloxybutyl acetate (e.g. methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.), 3-alkane Alkyloxypropanoates (e.g. methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate, etc. (e.g. methyl 3-methoxypropionate, 3-methoxy Ethyl propionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxy propionate alkyl esters (for example: 2-alkyloxy Methyl propionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate, etc. (e.g. methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2 -Propyl methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkyloxy-2-methylpropionate and 2-alkane Ethyloxy-2-methylpropionate (e.g. 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.), methylpyruvate , Ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, 1-methoxy-2-propane Esters such as methyl acetate; diethylene glycol dimethyl ether Tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethyl ether Ethers such as glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate; methyl ethyl ketone, cyclohexanone, 2-heptane Ketones such as ketones, 3-heptanone, N-methyl-2-pyrrolidone, γ-butyrolactone; toluene, xylene, anisole, mesitylene, ethylbenzene, propylbenzene, cumene , N-butylbenzene, second butylbenzene, isobutylbenzene, third butylbenzene, pentylbenzene, isoamylbenzene, (2,2-dimethylpropyl) benzene, 1-phenylhexyl Alkane, 1-phenylheptane, 1-phenyloctane, 1-phenylnonane, 1-phenyldecane, cyclopropylbenzene, cyclohexylbenzene, 2-ethyltoluene, 1,2-diethylbenzene, o-isopropyltoluene, indan, 1,2,3,4-tetrahydronaphthalene, 3-ethyltoluene, m-isopropyltoluene, 1,3-diiso Propylbenzene, 4-ethyltoluene, 1,4-diethylbenzene, p-isopropyltoluene, 1,4-diisopropylbenzene, 4-tert-butyltoluene, 1,4-di- Tert-butylbenzene, 1,3-diethylbenzene, 1,2,3-trimethylbenzene, 1,2,4-trimethylbenzene, 4-tert-butyl-o-xylene, 1, 2,4-triethylbenzene, 1,3,5-triethylbenzene, 1,3,5-triisopropylbenzene, 5-third butyl-m-xylene, 3,5-di- Aromatic hydrocarbons such as tributyl toluene, 1,2,3,5-tetramethylbenzene, 1,2,4,5-tetramethylbenzene, pentamethylbenzene; limonene, p-menthane, nonane, Hydrocarbons such as decane, dodecane, and decalin.

該些中較佳為均三甲苯、第三丁基苯、1,2,4-三甲基苯、對薄荷烷、γ-丁內酯、苯甲醚、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯,更佳為均三甲苯。 Of these, mesitylene, third butylbenzene, 1,2,4-trimethylbenzene, p-menthane, γ-butyrolactone, anisole, and methyl 3-ethoxypropionate are preferred. , Ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone , Cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate, more preferably mesitylene.

就改良塗佈表面性狀等觀點而言,該些溶劑亦較佳為混合兩種以上的形態。於該情況下,特佳為如下的混合溶液,其包含選自均三甲苯、第三丁基苯、1,2,4-三甲基苯、對薄荷烷、γ-丁內酯、苯甲醚、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯中的兩種以上。 From the viewpoint of improving the surface properties of the coating, these solvents are also preferably in the form of a mixture of two or more. In this case, it is particularly preferable that the mixed solution contains a material selected from the group consisting of mesitylene, third butylbenzene, 1,2,4-trimethylbenzene, p-menthane, γ-butyrolactone, and benzyl Ether, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, 3-methyl Two or more of methyl oxypropionate, 2-heptanone, cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate .

暫時接著劑組成物中所含的溶劑的於1013.25hPa中的 沸點較佳為110℃~250℃,更佳為140℃~190℃。藉由使用此種溶劑,可獲得面內均勻性更優異的暫時接著劑。於使用兩種以上的溶劑的情況下,將具有沸點最高的溶劑的沸點設為所述沸點。 Temporary adhesive in the composition of 1013.25 hPa The boiling point is preferably 110 ° C to 250 ° C, and more preferably 140 ° C to 190 ° C. By using such a solvent, a temporary adhesive having more excellent in-plane uniformity can be obtained. When two or more solvents are used, the boiling point of the solvent having the highest boiling point is set as the boiling point.

於暫時接著劑組成物具有溶劑的情況下,就塗佈性的觀點而言,暫時接著劑組成物的溶劑的含量較佳為暫時接著劑組成物的總固體成分濃度成為5質量%~80質量%的量,進而更佳為10質量%~50質量%,特佳為15質量%~40質量%。 In the case where the temporary adhesive composition has a solvent, the content of the solvent in the temporary adhesive composition is preferably from the viewpoint of coating properties such that the total solid content concentration of the temporary adhesive composition is 5 to 80% by mass The amount of% is more preferably 10% by mass to 50% by mass, and particularly preferably 15% by mass to 40% by mass.

溶劑可僅為一種,亦可為兩種以上。於溶劑為兩種以上的情況下,較佳為其合計為所述範圍。 The solvent may be only one kind, or two or more kinds. When there are two or more solvents, it is preferable that the total thereof is within the above range.

暫時接著劑層中的溶劑含有率較佳為1質量%以下,更佳為0.1質量%以下,特佳為不含。 The content of the solvent in the temporary adhesive layer is preferably 1% by mass or less, more preferably 0.1% by mass or less, and particularly preferably not contained.

<<含有氟原子及矽原子中的至少一者的化合物>> << Compound containing at least one of fluorine atom and silicon atom >>

本發明中使用的暫時接著劑組成物較佳為包含含有氟原子及矽原子中的至少一者的化合物。藉由調配此種成分,載體基板與加工基板的剝離變得更容易。進而,關於含有氟原子及矽原子中的至少一者的化合物,由於矽原子或氟原子容易偏向存在於暫時接著劑層的表層附近,因此即便該些化合物的量相對於暫時接著劑組成物的樹脂等而言較少,亦可形成對加工基板或載體基板的剝離性優異的暫時接著劑層。 The temporary adhesive composition used in the present invention is preferably a compound containing at least one of a fluorine atom and a silicon atom. By blending such components, it becomes easier to separate the carrier substrate and the processing substrate. Furthermore, regarding compounds containing at least one of a fluorine atom and a silicon atom, since silicon atoms or fluorine atoms tend to be biased near the surface layer of the temporary adhesive layer, even if the amount of these compounds is relative to that of the temporary adhesive composition, There are few resins and the like, and a temporary adhesive layer having excellent releasability from a processing substrate or a carrier substrate can also be formed.

<<<具有氟原子的化合物>>> <<< Compounds with fluorine atom >>>

本發明中使用的暫時接著劑組成物較佳為包含具有氟原子的化合物。 The temporary adhesive composition used in the present invention preferably contains a compound having a fluorine atom.

作為具有氟原子的化合物的實施形態,可例示液體狀的化合物。所謂液體狀的化合物為於25℃下具有流動性的化合物,例如是指25℃下的黏度為1mPa.s~100,000mPa.s的化合物。 Examples of the compound having a fluorine atom include liquid compounds. The so-called liquid compound is a compound having fluidity at 25 ° C., for example, means that the viscosity at 25 ° C. is 1 mPa. s ~ 100,000mPa. s compound.

具有氟原子的化合物的25℃下的黏度例如更佳為10mPa.s~20,000mPa.s,尤佳為100mPa.s~15,000mPa.s。若具有氟原子的化合物的黏度為所述範圍,則具有氟原子的化合物容易偏向存在於暫時接著劑的表面。 The viscosity at 25 ° C of the compound having a fluorine atom is, for example, more preferably 10 mPa. s ~ 20,000mPa. s, particularly preferably 100mPa. s ~ 15,000mPa. s. When the viscosity of the compound having a fluorine atom is within the above range, the compound having a fluorine atom tends to be biased on the surface of the temporary adhesive.

於本發明中,具有氟原子的化合物可較佳地使用單體、寡聚物、聚合物的任一形態的化合物。另外,亦可為寡聚物與聚合物的混合物。另外,亦可為寡聚物及/或聚合物與單體的混合物。 In the present invention, as the compound having a fluorine atom, a compound in any form of a monomer, an oligomer, and a polymer can be preferably used. Alternatively, it may be a mixture of an oligomer and a polymer. It may also be an oligomer and / or a mixture of a polymer and a monomer.

就耐熱性等觀點而言,具有氟原子的化合物較佳為寡聚物、聚合物及該些的混合物。 From the viewpoint of heat resistance and the like, the compound having a fluorine atom is preferably an oligomer, a polymer, and a mixture thereof.

作為寡聚物、聚合物,例如可列舉自由基聚合物、陽離子聚合物、陰離子聚合物等,可較佳地使用任一種。其中,特佳為(甲基)丙烯酸聚合物。藉由使用(甲基)丙烯酸聚合物的具有氟原子的化合物,可期待具有氟原子的化合物容易於暫時接著劑層的表面達成偏向存在化從而剝離性優異的效果。 Examples of the oligomer and polymer include a radical polymer, a cationic polymer, and an anionic polymer, and any of them can be preferably used. Among them, a (meth) acrylic polymer is particularly preferred. By using a compound having a fluorine atom of a (meth) acrylic polymer, it is expected that the compound having a fluorine atom can easily achieve a biased existence on the surface of the temporary adhesive layer and have excellent peelability.

再者,於本發明中,所謂寡聚物,定義為重量平均分子量為500以上且小於2000的化合物。另外,所謂聚合物,定義為重量平均分子量為2000以上的化合物。 In the present invention, an oligomer is defined as a compound having a weight average molecular weight of 500 or more and less than 2000. The polymer is defined as a compound having a weight average molecular weight of 2,000 or more.

具有氟原子的化合物的重量平均分子量較佳為500~100000,更佳為1000~50000,進而更佳為2000~20000。 The weight average molecular weight of the compound having a fluorine atom is preferably 500 to 100,000, more preferably 1,000 to 50,000, and even more preferably 2,000 to 20,000.

於本發明中,具有氟原子的化合物較佳為當對供於暫時接著的基板進行處理時不會改質的化合物。例如,較佳為即便於250℃以上進行加熱或利用各種化學藥液對基板進行處理後亦可以液體狀的形態存在的化合物。作為具體的一例,於自25℃的狀態以10℃/min的昇溫條件加熱至250℃後,冷卻至25℃後的25℃下的黏度較佳為1mPa.s~100,000mPa.s,更佳為10mPa.s~20,000mPa.s,尤佳為100mPa.s~15,000mPa.s。 In the present invention, the compound having a fluorine atom is preferably a compound which is not modified when a substrate to be temporarily adhered is processed. For example, a compound which can exist in a liquid form even after being heated at 250 ° C. or more or a substrate is treated with various chemical liquids is preferred. As a specific example, the viscosity at 25 ° C after being heated to 250 ° C from a state of 25 ° C under a temperature rise condition of 10 ° C / min is preferably 1 mPa. s ~ 100,000mPa. s, more preferably 10mPa. s ~ 20,000mPa. s, particularly preferably 100mPa. s ~ 15,000mPa. s.

作為具有此種特性的具有氟原子的液體狀化合物,較佳為不具有反應性基的非熱硬化性化合物。此處所述的反應性基是指藉由250℃的加熱而反應的基的全體,可列舉聚合性基、水解性基等。具體而言,例如可列舉:(甲基)丙烯酸基、環氧基、異氰酸基等。 The liquid compound having a fluorine atom having such characteristics is preferably a non-thermosetting compound having no reactive group. The reactive group mentioned here means the whole group which reacts by heating at 250 degreeC, and a polymeric group, a hydrolysable group, etc. are mentioned. Specific examples include (meth) acrylic groups, epoxy groups, and isocyanate groups.

作為非熱硬化性化合物,可較佳地使用包含一種或兩種以上的含氟單官能單體的聚合物。更具體而言,可列舉選自如下聚合物中的至少一種的含氟樹脂等:選自四氟乙烯、六氟丙烯、四氟環氧乙烷、六氟環氧丙烷、全氟烷基乙烯基醚、氯三氟乙烯、偏二氟乙烯、含有全氟烷基的(甲基)丙烯酸酯中的一種或兩種以上的含氟單官能單體的均聚物或該些單體的共聚物、含氟單官能單體的一種或兩種以上與乙烯的共聚物、含氟單官能單體的一種或兩種以上與氯三氟乙烯的共聚物。 As the non-thermosetting compound, a polymer containing one or two or more fluorine-containing monofunctional monomers can be preferably used. More specifically, a fluororesin selected from at least one polymer selected from the group consisting of tetrafluoroethylene, hexafluoropropylene, tetrafluoroethylene oxide, hexafluoropropylene oxide, and perfluoroalkylethylene can be listed. Homopolymer of one or two or more kinds of fluorinated monofunctional monomers or copolymerization of one or more of fluorinated ethers, chlorotrifluoroethylene, vinylidene fluoride, (meth) acrylates containing perfluoroalkyl groups Copolymer of ethylene, one or two or more kinds of fluorine-containing monofunctional monomers, and a copolymer of one or two or more kinds of fluorine-containing monofunctional monomers with chlorotrifluoroethylene.

作為非熱硬化性化合物,較佳為可由含有全氟烷基的(甲基)丙烯酸酯合成的含有全氟烷基的(甲基)丙烯酸共聚物。 The non-thermosetting compound is preferably a perfluoroalkyl group-containing (meth) acrylic copolymer synthesized from a perfluoroalkyl group-containing (meth) acrylate.

就剝離性的觀點而言,除含有全氟烷基的(甲基)丙烯酸酯以外,含有全氟烷基的(甲基)丙烯酸共聚物亦可任意選擇共聚成分。作為可形成共聚成分的自由基聚合性化合物,例如可列舉選自丙烯酸酯類、甲基丙烯酸酯類、N,N-2取代丙烯醯胺類、N,N-2取代甲基丙烯醯胺類、苯乙烯類、丙烯腈類、甲基丙烯腈類等中的自由基聚合性化合物。 From the standpoint of releasability, in addition to the (meth) acrylic acid ester containing a perfluoroalkyl group, the (meth) acrylic acid copolymer containing a perfluoroalkyl group may optionally have a copolymerization component selected. Examples of the radically polymerizable compound capable of forming a copolymerizable component include acrylates, methacrylates, N, N-2 substituted acrylamides, and N, N-2 substituted acrylamides. , Styrenes, acrylonitriles, methacrylonitrile, and other radical polymerizable compounds.

更具體而言,例如可列舉:丙烯酸烷基酯(較佳為烷基的碳原子數為1~20者)等丙烯酸酯類(例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸丁酯、丙烯酸戊酯、丙烯酸乙基己酯、丙烯酸辛酯、丙烯酸第三辛酯、丙烯酸氯乙酯、丙烯酸-2,2-二甲基羥基丙酯、丙烯酸-5-羥基戊酯、三羥甲基丙烷單丙烯酸酯、季戊四醇單丙烯酸酯、丙烯酸縮水甘油酯、丙烯酸苄基酯、丙烯酸甲氧基苄基酯、丙烯酸糠基酯、丙烯酸四氫糠基酯等);丙烯酸芳基酯(例如丙烯酸苯基酯等);甲基丙烯酸烷基酯(較佳為烷基的碳原子數為1~20者)等甲基丙烯酸酯類(例如甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸異丙酯、甲基丙烯酸戊酯、甲基丙烯酸己酯、甲基丙烯酸環己酯、甲基丙烯酸苄基酯、甲基丙烯酸氯苄基酯、甲基丙烯酸辛酯、甲基丙烯酸-4-羥基丁酯、甲基丙烯酸-5-羥基戊酯、甲基丙烯酸-2,2-二甲基-3-羥基丙酯、三羥甲基丙烷單甲基丙烯酸酯、季戊四醇單甲基丙烯酸酯、甲基丙烯酸縮水甘油酯、甲基丙烯酸糠基酯、甲基丙烯酸四氫糠基酯等);甲基丙烯酸芳基酯(例如甲基丙烯酸苯基酯、甲 基丙烯酸甲苯酚基酯、甲基丙烯酸萘基酯等);苯乙烯,烷基苯乙烯等苯乙烯(例如甲基苯乙烯、二甲基苯乙烯、三甲基苯乙烯、乙基苯乙烯、二乙基苯乙烯、異丙基苯乙烯、丁基苯乙烯、己基苯乙烯、環己基苯乙烯、癸基苯乙基、苄基苯乙烯、氯甲基苯乙烯、三氟甲基苯乙烯、乙氧基甲基苯乙烯、乙醯氧基甲基苯乙烯等),烷氧基苯乙烯(例如甲氧基苯乙烯、4-甲氧基-3-甲基苯乙烯、二甲氧基苯乙烯等),鹵化苯乙烯(例如氯苯乙烯、二氯苯乙烯、三氯苯乙烯、四氯苯乙烯、五氯苯乙烯、溴苯乙烯、二溴苯乙烯、碘苯乙烯、氟苯乙烯、三氟苯乙烯、2-溴-4-三氟甲基苯乙烯、4-氟-3-三氟甲基苯乙烯等);丙烯腈;含有羧酸的自由基聚合性化合物(丙烯酸、甲基丙烯酸、衣康酸、丁烯酸、異丁烯酸、順丁烯二酸、對羧基苯乙烯及該些的酸基的金屬鹽、銨鹽化合物等)。就剝離性的觀點而言,特佳為具有碳數1~24的烴基的(甲基)丙烯酸酯,例如可列舉(甲基)丙烯酸的甲酯、丁酯、2-乙基己酯、月桂基酯、硬脂基酯、縮水甘油酯等,較佳為2-乙基己基、月桂基、硬脂基等高級醇的(甲基)丙烯酸酯,特佳為丙烯酸酯。 More specifically, for example, acrylates (such as methyl acrylate, ethyl acrylate, propyl acrylate, and butyl acrylate) such as alkyl acrylate (preferably those having 1 to 20 carbon atoms in the alkyl group) can be cited. , Pentyl acrylate, ethylhexyl acrylate, octyl acrylate, third octyl acrylate, chloroethyl acrylate, -2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate, trimethylol Propane monoacrylate, pentaerythritol monoacrylate, glycidyl acrylate, benzyl acrylate, methoxybenzyl acrylate, furfuryl acrylate, tetrahydrofurfuryl acrylate, etc.); aryl acrylates (such as acrylic acid Phenyl esters, etc.); methacrylic esters such as alkyl methacrylates (preferably those having 1 to 20 carbon atoms in the alkyl group) (e.g. methyl methacrylate, ethyl methacrylate, methyl Propyl acrylate, isopropyl methacrylate, amyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, chlorobenzyl methacrylate, octyl methacrylate , 4-hydroxybutyl methacrylate, methyl 5-hydroxypentyl acrylate, -2,2-dimethyl-3-hydroxypropyl methacrylate, trimethylolpropane monomethacrylate, pentaerythritol monomethacrylate, glycidyl methacrylate , Furfuryl methacrylate, tetrahydrofurfuryl methacrylate, etc.); aryl methacrylates (such as phenyl methacrylate, Cresol-based acrylate, naphthyl methacrylate, etc.); styrenes such as styrene, alkylstyrene (e.g. methylstyrene, dimethylstyrene, trimethylstyrene, ethylstyrene, Diethylstyrene, isopropylstyrene, butylstyrene, hexylstyrene, cyclohexylstyrene, decylphenethyl, benzylstyrene, chloromethylstyrene, trifluoromethylstyrene, Ethoxymethylstyrene, ethoxymethylstyrene, etc.), alkoxystyrene (such as methoxystyrene, 4-methoxy-3-methylstyrene, dimethoxybenzene Ethylene, etc.), halogenated styrene (e.g. chlorostyrene, dichlorostyrene, trichlorostyrene, tetrachlorostyrene, pentachlorostyrene, bromostyrene, dibromostyrene, iodostyrene, fluorostyrene, Trifluorostyrene, 2-bromo-4-trifluoromethylstyrene, 4-fluoro-3-trifluoromethylstyrene, etc.); acrylonitrile; radical polymerizable compounds containing carboxylic acid (acrylic acid, methyl Acrylic acid, itaconic acid, butenoic acid, methacrylic acid, maleic acid, p-carboxystyrene, and metal salts and ammonium compounds of these acid groups ). From the standpoint of releasability, a (meth) acrylate having a hydrocarbon group having 1 to 24 carbon atoms is particularly preferred, and examples include methyl (meth) acrylate, butyl ester, 2-ethylhexyl ester, and lauryl (Meth) acrylates of higher alcohols such as 2-ethylhexyl, lauryl, and stearyl are preferred, and particularly preferred are acrylates.

於本發明中,具有氟原子的化合物自25℃以20℃/min昇溫的10%熱質量減少溫度較佳為250℃以上,更佳為280℃以上。另外,上限值並無特別限定,例如較佳為1000℃以下,更佳為800℃以下。根據該態樣,容易形成耐熱性優異的暫時接著用積層體。再者,所謂10%熱質量減少溫度,是指利用熱重量測定裝置於氮氣流下以所述昇溫條件進行測定而可見測定前的重量減少 了10%的溫度。 In the present invention, the 10% thermal mass reduction temperature of the compound having a fluorine atom increased from 25 ° C at 20 ° C / min is preferably 250 ° C or more, and more preferably 280 ° C or more. The upper limit value is not particularly limited, but is preferably 1000 ° C or lower, more preferably 800 ° C or lower. According to this aspect, it is easy to form a temporary bonding laminated body having excellent heat resistance. In addition, the 10% thermal mass reduction temperature refers to a measurement using a thermogravimetric measurement device under a nitrogen flow under the temperature rising condition, and it can be seen that the weight before measurement is reduced. 10% temperature.

於本發明中,具有氟原子的化合物較佳為含有親油基的化合物。作為親油基,可列舉烷基、芳香族基等。 In the present invention, the compound having a fluorine atom is preferably a compound containing a lipophilic group. Examples of the lipophilic group include an alkyl group and an aromatic group.

烷基可列舉直鏈烷基、分支烷基、環狀烷基。 Examples of the alkyl group include a linear alkyl group, a branched alkyl group, and a cyclic alkyl group.

直鏈烷基的碳數較佳為2~30,更佳為4~30,進而更佳為6~30,特佳為12~20。 The carbon number of the linear alkyl group is preferably from 2 to 30, more preferably from 4 to 30, even more preferably from 6 to 30, particularly preferably from 12 to 20.

分支烷基的碳數較佳為3~30,更佳為4~30,進而更佳為6~30,特佳為12~20。 The carbon number of the branched alkyl group is preferably 3 to 30, more preferably 4 to 30, even more preferably 6 to 30, and particularly preferably 12 to 20.

環狀烷基可為單環,亦可為多環。環狀烷基的碳數較佳為3~30,更佳為4~30,進而更佳為6~30,最佳為12~20。 The cyclic alkyl group may be monocyclic or polycyclic. The carbon number of the cyclic alkyl group is preferably 3 to 30, more preferably 4 to 30, even more preferably 6 to 30, and most preferably 12 to 20.

作為直鏈烷基或分支烷基的具體例,例如可列舉:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十四烷基、十八烷基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基、2-乙基己基。 Specific examples of the linear alkyl group or the branched alkyl group include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, and dodecyl. , Tetradecyl, octadecyl, isopropyl, isobutyl, second butyl, third butyl, 1-ethylpentyl, 2-ethylhexyl.

作為環狀烷基的具體例,例如可列舉:環丙基、環丁基、環戊基、環己基、環庚基及環辛基、金剛烷基、降冰片基、冰片基、莰烯基、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基、二環己基、蒎烯基。 Specific examples of the cyclic alkyl group include cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, and cyclooctyl, adamantyl, norbornyl, norbornyl, and pinenyl. , Decahydronaphthyl, tricyclodecyl, tetracyclodecyl, fluorenyldifluorenyl, dicyclohexyl, pinenyl.

烷基可具有取代基。作為取代基,可列舉:鹵素原子、烷氧基、芳香族基等。 The alkyl group may have a substituent. Examples of the substituent include a halogen atom, an alkoxy group, and an aromatic group.

作為鹵素原子,可列舉氯原子、氟原子、溴原子、碘原子等,較佳為氟原子。 Examples of the halogen atom include a chlorine atom, a fluorine atom, a bromine atom, and an iodine atom. A fluorine atom is preferred.

烷氧基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。烷氧基較佳為直鏈烷氧基或分支烷氧基。 The carbon number of the alkoxy group is preferably 1 to 30, more preferably 1 to 20, and even more preferably 1 to 10. The alkoxy group is preferably a linear alkoxy group or a branched alkoxy group.

芳香族基可為單環,亦可為多環。芳香族基的碳數較佳為6~20,更佳為6~14,最佳為6~10。芳香族基較佳為於構成環的元素中不含雜原子(例如氮原子、氧原子、硫原子等)。作為芳香族環的具體例,可列舉:苯環、萘環、戊搭烯環、茚環、薁環、庚搭烯環、苯并二茚環、苝環、稠五苯環、苊環、菲環、蒽環、稠四苯環、環、聯伸三苯環、茀環、聯苯環、吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡啶環、吡嗪環、嘧啶環、噠嗪環、吲哚嗪環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹嗪環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹唑啉環、異喹啉環、咔唑環、啡啶環、吖啶環、啡啉環、噻蒽環、苯并哌喃環、氧雜蒽環、啡噁噻環、啡噻嗪環及啡嗪環。 The aromatic group may be monocyclic or polycyclic. The carbon number of the aromatic group is preferably 6 to 20, more preferably 6 to 14, and most preferably 6 to 10. The aromatic group preferably does not contain a hetero atom (for example, a nitrogen atom, an oxygen atom, a sulfur atom, etc.) in the element constituting the ring. Specific examples of the aromatic ring include a benzene ring, a naphthalene ring, a pentalene ring, an indene ring, a fluorene ring, a heptene ring, a benzodiindene ring, a fluorene ring, a pentacene ring, a fluorene ring, Phenanthrene ring, anthracene ring, fused tetraphenyl ring, Ring, triphenylene ring, fluorene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, indoxazine Ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinazine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinazoline ring, isoquine A phthaloline ring, a carbazole ring, a pyridine ring, an acridine ring, a phenanthroline ring, a thiathracene ring, a benzopiperan ring, a xanthracene ring, a phenothiazine ring, a phenothiazine ring, and a phenazine ring.

芳香族基可具有所述取代基。 The aromatic group may have the substituent.

具有氟原子的化合物可為僅含有一種親油基的化合物,亦可含有兩種以上。另外,親油基亦可含有氟原子。即,具有氟原子的化合物可為僅親油基含有氟原子的化合物。另外,亦可為除了親油基以外進而含有具有氟元素的基(亦稱為含氟基)的化合物。較佳為含有親油基與含氟基的化合物。 The compound having a fluorine atom may be a compound containing only one kind of lipophilic group, or may contain two or more kinds. The lipophilic group may contain a fluorine atom. That is, the compound having a fluorine atom may be a compound having only a lipophilic group containing a fluorine atom. In addition, it may be a compound containing a group having a fluorine element (also referred to as a fluorine-containing group) in addition to the lipophilic group. Compounds containing a lipophilic group and a fluorine-containing group are preferred.

於具有氟原子的化合物為含有親油基與含氟基的化合物的情況下,親油基可含有氟原子,亦可不含氟原子,較佳為親油基不含氟原子。 In the case where the compound having a fluorine atom is a compound containing a lipophilic group and a fluorine-containing group, the lipophilic group may or may not contain a fluorine atom, and it is preferable that the lipophilic group does not contain a fluorine atom.

具有氟原子的化合物於一分子中具有一個以上的親油基,較佳為具有2個~100個,特佳為具有6個~80個。 The compound having a fluorine atom has more than one lipophilic group in one molecule, preferably has 2 to 100, and particularly preferably has 6 to 80.

作為含氟基,可使用已知的氟基。例如,可列舉含氟烷基、含氟伸烷基等。再者,含氟基中作為親油基而發揮功能者包含於親油基中。 As the fluorine-containing group, a known fluorine group can be used. Examples include fluorine-containing alkyl groups and fluorine-containing alkylene groups. Furthermore, those which function as a lipophilic group among the fluorine-containing groups are included in the lipophilic group.

含氟烷基的碳數較佳為1~30,更佳為1~20,進而更佳為1~15。含氟烷基可為直鏈、分支、環狀的任一種。另外,亦可具有醚鍵。另外,含氟烷基亦可為氫原子的全部被取代為氟原子的全氟烷基。 The carbon number of the fluorine-containing alkyl group is preferably 1 to 30, more preferably 1 to 20, and even more preferably 1 to 15. The fluorine-containing alkyl group may be any of linear, branched, and cyclic. Moreover, it may have an ether bond. The fluorine-containing alkyl group may be a perfluoroalkyl group in which all of the hydrogen atoms are replaced with fluorine atoms.

含氟伸烷基的碳數較佳為1~30,更佳為2~20,進而更佳為2~15。含氟伸烷基可為直鏈、分支、環狀的任一種。另外,亦可具有醚鍵。另外,含氟伸烷基亦可為氫原子的全部被取代為氟原子的全氟伸烷基。 The number of carbon atoms of the fluorine-containing alkylene group is preferably 1 to 30, more preferably 2 to 20, and even more preferably 2 to 15. The fluorine-containing alkylene group may be any of linear, branched, and cyclic. Moreover, it may have an ether bond. The fluorine-containing alkylene group may be a perfluoroalkylene group in which all the hydrogen atoms are replaced with fluorine atoms.

具有氟原子的化合物較佳為氟原子的含有率為1質量%~90質量%,更佳為2質量%~80質量%,進而更佳為5質量%~70質量%。若氟含有率為所述範圍,則剝離性優異。 The compound having a fluorine atom preferably has a fluorine atom content of 1 to 90% by mass, more preferably 2 to 80% by mass, and even more preferably 5 to 70% by mass. When the fluorine content is in the above range, the peelability is excellent.

氟原子的含有率由「{(一分子中的氟原子數×氟原子的質量)/一分子中的所有原子的質量}×100」來定義。 The content ratio of fluorine atoms is defined by "{(the number of fluorine atoms in one molecule × the mass of fluorine atoms) / the mass of all atoms in one molecule} × 100".

具有氟原子的化合物亦可使用市售品。作為非熱硬化性化合物,市售者可列舉:鐵氟龍(Teflon)(注冊商標)(杜邦(DuPont)公司)、鐵氟紮(Tefzel)(杜邦(DuPont)公司)、氟隆(Fluon)(旭硝子公司)、海伊拉(Heira)(蘇威蘇萊克斯(SolvaySolexis) 公司)、哈伊拉(Heiler)(蘇威蘇萊克斯(SolvaySolexis)公司)、魯米氟隆(Lumiflon)(旭硝子公司)、阿弗拉斯(Aflas)(旭硝子公司)、塞夫索特(Cefralsoft)(中央硝子(Central Glass)公司)、塞夫考特(Cefralcoat)(中央硝子(Central Glass)公司)等氟樹脂;威登(Viton)(杜邦(DuPont)公司)、卡爾萊茲(Kalrez)(杜邦(DuPont)公司)、喜富勒(SIFEL)(信越化學工業公司)等商標名的氟橡膠;庫拉托斯(Krytox)(杜邦(DuPont)公司)、氟必琳(Fomblin)(大德科技(Daitoku Tech)公司)、戴姆納姆(Demnum)(大金(Daikin)工業公司)、沙福隆(Surflon)(例如沙福隆(Surflon)S243等,AGC清美化學(AGC Seimi Chemical)公司製造)等以全氟聚醚油為代表的各種氟油;或戴氟琳(Daifree)FB962等戴氟琳(Daifree)FB系列(大金(Daikin)工業公司)、美佳法(Megafac)系列(迪愛生(DIC)公司)等商標名的含氟脫模劑等。 As the compound having a fluorine atom, a commercially available product can also be used. Examples of the non-thermosetting compound include Teflon (registered trademark) (DuPont), Tefzel (DuPont), and Fluon. (Asahi Glass), Heira (SolvaySolexis) Company), Heiler (SolvaySolexis), Lumiflon (Asahi Glass), Aflas (Asahi Glass), Sefot ( Cefralsoft (Central Glass), Cefralcoat (Central Glass) and other fluororesins; Viton (DuPont), Kalrez ) (DuPont), SIFEL (Shin-Etsu Chemical Co., Ltd.) and other branded fluorine rubber; Krytox (DuPont), Fomblin (Fomblin) ( Daitoku Tech), Demnum (Daikin Industries), Surflon (e.g. Surflon S243, etc.), AGC Seimi Chemical (manufactured by Chemical)) and other fluoro oils represented by perfluoropolyether oil; or Daifree FB962 and other Daifree FB series (Daikin Industrial Company), Megafac ) Series (Dicson (DIC)) and other brand-name fluorine-containing release agents.

另外,作為具有親油基的具有氟原子的化合物而市售者例如可列舉:迪愛生(DIC)公司製造的美佳法(Megafac)系列的F-251、F-281、F-477、F-553、F-554、F-555、F-556、F-557、F-558、F-559、F-560、F-561、F-563、F-565、F-567、F-568、F-571、R-40、R-41、R-43、R-94;或尼歐斯(NEOS)公司製造的福傑特(Ftergent)系列的710F、710FM、710FS、710FL、730FL、730LM。 In addition, as a commercially available compound having a fluorine atom having an oleophilic group, there may be mentioned, for example, F-251, F-281, F-477, and F-Megafac series manufactured by DIC Corporation. 553, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-563, F-565, F-567, F-568, F-571, R-40, R-41, R-43, R-94; or 710F, 710FM, 710FS, 710FL, 730FL, 730LM of the Ftergent series manufactured by NEOS.

本發明中,作為具有氟原子的化合物,亦可使用含有氟的矽烷偶合劑。含有氟的矽烷偶合劑較佳為矽烷偶合劑,特佳為 含有氟的烷氧基矽烷。作為市售品,可列舉大金(Daikin)工業股份有限公司製造的歐普路(Optool)DAC-HP、歐普路(Optool)DSX。 In the present invention, a fluorine-containing silane coupling agent may be used as the compound having a fluorine atom. The fluorine-containing silane coupling agent is preferably a silane coupling agent, particularly preferably A fluorine-containing alkoxysilane. Examples of commercially available products include Optool DAC-HP and Optool DSX manufactured by Daikin Industrial Co., Ltd.

<<<含有矽原子的化合物>>> <<< compound containing silicon atom >>>

含有矽原子的化合物較佳為所謂的熱硬化性化合物(例如,至少於100℃以上開始硬化的化合物)。 The compound containing a silicon atom is preferably a so-called thermosetting compound (for example, a compound that starts to harden at a temperature of at least 100 ° C).

另外,本發明中使用的含有矽原子的化合物較佳為耐熱性高的化合物,自25℃以20℃/min昇溫的10%熱質量減少溫度較佳為250℃以上,更佳為280℃以上。另外,上限值並無特別限定,例如較佳為1000℃以下,更佳為800℃以下。根據該態樣,容易形成耐熱性優異的暫時接著劑層。再者,所謂熱質量減少溫度,是指利用熱重量測定裝置(thermogravimetric analyzer,TGA)於氮氣流下以所述昇溫條件進行測定而得的值。 In addition, the silicon atom-containing compound used in the present invention is preferably a compound having high heat resistance, and a 10% thermal mass reduction temperature which is increased from 25 ° C at 20 ° C / min is preferably 250 ° C or more, more preferably 280 ° C or more . The upper limit value is not particularly limited, but is preferably 1000 ° C or lower, more preferably 800 ° C or lower. According to this aspect, it is easy to form a temporary adhesive layer excellent in heat resistance. The term “thermal mass reduction temperature” refers to a value obtained by performing measurement under a temperature rise condition using a thermogravimetric analyzer (TGA) under a nitrogen flow.

含有矽原子的化合物可為單體,亦可為寡聚物,還可為聚合物,較佳為寡聚物或聚合物。含有矽原子的化合物的重量平均分子量較佳為1,000以上,更佳為3,000以上,亦可為5,000以上,進而亦可為10,000以上。作為重量平均分子量的上限值,較佳為500,000以下,更佳為100,000以下。 The compound containing a silicon atom may be a monomer, an oligomer, or a polymer, and is preferably an oligomer or a polymer. The weight average molecular weight of the silicon atom-containing compound is preferably 1,000 or more, more preferably 3,000 or more, and may be 5,000 or more, and may be 10,000 or more. The upper limit of the weight average molecular weight is preferably 500,000 or less, and more preferably 100,000 or less.

本發明中使用的含有矽原子的化合物較佳為具有矽氧烷鍵,更佳為含有下述式所表示的具有矽氧烷鍵的重複單元。 The compound containing a silicon atom used in the present invention preferably has a siloxane bond, and more preferably contains a repeating unit having a siloxane bond represented by the following formula.

[化4] [Chemical 4]

於所述式中,R分別獨立地為氫原子或取代基。含有矽原子的化合物藉由含有具有矽氧烷鍵的重複單元而獲得耐熱性更優異的暫時接著劑組成物。 In the formula, R is each independently a hydrogen atom or a substituent. The silicon atom-containing compound contains a repeating unit having a siloxane bond, thereby obtaining a temporary adhesive composition having more excellent heat resistance.

此處,R較佳為氫原子及碳數1~8的一價的烴基,更佳為氫原子、烷基及芳基,進而更佳為氫原子及碳數1~3的烷基。 Here, R is preferably a hydrogen atom and a monovalent hydrocarbon group having 1 to 8 carbon atoms, more preferably a hydrogen atom, an alkyl group, and an aryl group, and still more preferably a hydrogen atom and an alkyl group having 1 to 3 carbon atoms.

另外,暫時接著劑組成物中所含的含有矽原子的化合物較佳為其20質量%以上為所述具有矽氧烷鍵的重複單元。 The compound containing a silicon atom contained in the temporary adhesive composition is preferably such that 20% by mass or more of the compound is a repeating unit having a siloxane bond.

本發明中使用的含有矽原子的化合物可除所述具有矽氧烷鍵的重複單元以外更包含下述的重複單元。 The silicon atom-containing compound used in the present invention may include the following repeating units in addition to the repeating units having a siloxane bond.

於所述式中,R1分別獨立地為氫原子或取代基,X為伸烷基或伸芳基。 In the formula, R 1 is each independently a hydrogen atom or a substituent, and X is an alkylene or an aryl group.

R1較佳為氫原子及碳數1~8的一價的烴基,更佳為氫原子、 烷基及芳基,進而更佳為氫原子及碳數1~3的烷基。 R 1 is preferably a hydrogen atom and a monovalent hydrocarbon group having 1 to 8 carbon atoms, more preferably a hydrogen atom, an alkyl group, and an aryl group, and still more preferably a hydrogen atom and an alkyl group having 1 to 3 carbon atoms.

X較佳為碳數1~3的伸烷基或伸苯基。 X is preferably an alkylene group or a phenylene group having 1 to 3 carbon atoms.

另外,暫時接著劑組成物中所含的含有矽原子的化合物較佳為其80質量%以下為所述重複單元。 The silicon atom-containing compound contained in the temporary adhesive composition is preferably such that the repeating unit is 80% by mass or less.

作為本發明中使用的含有矽原子的化合物的較佳的第一實施形態,可例示具有交聯性基的態樣。作為交聯性基,是指藉由進行加熱(例如150℃以上)而形成交聯結構的基,具體而言可列舉酚性羥基、環氧基、氧雜環丁基、羥甲基及烷氧基羥甲基作為較佳例。第一本實施形態中,進而較佳為暫時接著劑組成物含有使所述交聯性基交聯的交聯劑。 As a preferable first embodiment of the silicon atom-containing compound used in the present invention, a state having a crosslinkable group can be exemplified. The crosslinkable group refers to a group that forms a crosslinked structure by heating (for example, 150 ° C. or higher), and specifically includes a phenolic hydroxyl group, an epoxy group, an oxetanyl group, a methylol group, and an alkyl Oxymethylol is a preferred example. In the first embodiment, it is more preferable that the temporary adhesive composition contains a crosslinking agent that crosslinks the crosslinkable group.

第一實施形態中使用的含有矽原子的化合物較佳為包含通式(21)所表示的重複單元的聚合物。 The silicon atom-containing compound used in the first embodiment is preferably a polymer containing a repeating unit represented by the general formula (21).

通式(21) General formula (21)

所述通式(21)中,R1~R4分別獨立地為碳數1~8的一價的烴基,m為1~100的整數,B為正整數,A為0或正整數。 In the general formula (21), R 1 to R 4 are each independently a monovalent hydrocarbon group having 1 to 8 carbon atoms, m is an integer of 1 to 100, B is a positive integer, and A is 0 or a positive integer.

X為包含交聯性基的二價的有機基。 X is a divalent organic group containing a crosslinkable group.

R1~R4分別獨立地較佳為碳數1~8的烷基,更佳為甲基或乙基,進而更佳為甲基。 R 1 to R 4 are each independently preferably an alkyl group having 1 to 8 carbon atoms, more preferably a methyl group or an ethyl group, and even more preferably a methyl group.

m較佳為3~80的整數,更佳為8~60的整數,進而更佳為10~40的整數。 m is preferably an integer of 3 to 80, more preferably an integer of 8 to 60, and even more preferably an integer of 10 to 40.

B較佳為5~100的整數。A較佳為0~5的整數。另外,A/B較佳為0~20,尤其更佳為0.5~5。 B is preferably an integer of 5 to 100. A is preferably an integer from 0 to 5. In addition, A / B is preferably 0-20, and particularly preferably 0.5-5.

作為X所具有的交聯性基,較佳為酚性羥基、環氧基及氧雜環丁基,更佳為酚性羥基及環氧基。 As a crosslinkable group which X has, a phenolic hydroxyl group, an epoxy group, and an oxetanyl group are preferable, and a phenolic hydroxyl group and an epoxy group are more preferable.

X進而更佳為下述通式(2)或通式(4)所表示的二價的有機基。 X is more preferably a divalent organic group represented by the following general formula (2) or (4).

通式(2) Formula (2)

所述通式(2)中,Z為二價的連結基,較佳為包含[化8] In the general formula (2), Z is a divalent linking group, and preferably contains [Chem. 8]

的任一個或兩個以上的組合的二價的有機基。 Any one or a combination of two or more divalent organic groups.

n為0或1,較佳為1。 n is 0 or 1, preferably 1.

R5及R6分別獨立地為碳數1~4的烷基或碳數1~4的烷氧基。 R 5 and R 6 are each independently an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms.

k分別獨立地為0、1、2的任一者,較佳為0或1,更佳為0。 k is independently any one of 0, 1, 2, and is preferably 0 or 1, and more preferably 0.

通式(4) Formula (4)

所述通式(4)中,V為二價的連結基,V的較佳範圍與通式(2)中的Z相同。 In the general formula (4), V is a divalent linking group, and a preferable range of V is the same as Z in the general formula (2).

p為0或1,較佳為1。 p is 0 or 1, preferably 1.

R7及R8分別獨立地為碳數1~4的烷基或碳數1~4的烷氧基。 R 7 and R 8 are each independently an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms.

h分別獨立地為0、1、2的任一者,較佳為0或1,更佳為0。 h is independently any one of 0, 1, 2, and is preferably 0 or 1, and more preferably 0.

作為交聯劑,較佳為選自利用福爾馬林或福爾馬林-醇 而改質的胺基縮合物、三聚氰胺樹脂、脲樹脂、於一分子中平均具有兩個以上的羥甲基或烷氧基羥甲基的苯酚化合物、及於一分子中平均具有兩個以上的環氧基的環氧化合物,更佳為選自於一分子中平均具有兩個以上的羥甲基或烷氧基羥甲基的苯酚化合物及於一分子中平均具有兩個以上的環氧基的環氧化合物。 The cross-linking agent is preferably selected from the group consisting of formalin or formalin-alcohol. And modified amine-based condensates, melamine resins, urea resins, phenol compounds having an average of two or more methylol or alkoxymethyl groups in one molecule, and an average of two or more The epoxy-based epoxy compound is more preferably selected from a phenol compound having an average of two or more methylol or alkoxymethyl groups in one molecule and an average of two or more epoxy groups in one molecule Epoxy compound.

於含有矽原子的化合物所具有的交聯性基為環氧基的情況下,可較佳地使用於一分子中平均具有兩個以上的羥基苯基的苯酚化合物。於一分子中平均具有兩個以上的羥基苯基的苯酚化合物較佳為於一分子中具有3個~5個羥基苯基的化合物,可例示甲酚酚醛清漆樹脂或α,α,α',α'-四(4-羥基苯基)-對二甲苯。作為市售品,例如可列舉旭有機材工業製造的EP-6030G、本州化學製造的Tris-P-PA、旭有機材工業製造的TEP-TPA等。 When the crosslinkable group possessed by the silicon atom-containing compound is an epoxy group, it can be preferably used for a phenol compound having an average of two or more hydroxyphenyl groups in one molecule. A phenol compound having an average of two or more hydroxyphenyl groups in one molecule is preferably a compound having 3 to 5 hydroxyphenyl groups in one molecule, and cresol novolac resin or α, α, α ', α'-Tetra (4-hydroxyphenyl) -p-xylene. Examples of commercially available products include EP-6030G manufactured by Asahi Organic Materials Industry, Tris-P-PA manufactured by Honshu Chemical Industry, and TEP-TPA manufactured by Asahi Organic Materials Industry.

於含有矽原子的化合物所具有的交聯性基為酚性羥基的情況下,可較佳地使用於一分子中平均具有兩個以上的環氧基的環氧化合物。於一分子中平均具有兩個以上的環氧基的環氧化合物較佳為於一分子中具有2個~5個環氧基的化合物,作為市售品,可例示EOCN-1020、EOCN-102S、EOCN-103S、XD-1000、NC-2000-L、EPPN-201、GAN、NC6000(以上為日本化藥製造)。另外,亦可較佳地使用下述所示的結構的交聯劑。 When the crosslinkable group of the compound containing a silicon atom is a phenolic hydroxyl group, it can be preferably used for an epoxy compound having an average of two or more epoxy groups in one molecule. An epoxy compound having an average of two or more epoxy groups in one molecule is preferably a compound having 2 to 5 epoxy groups in one molecule. As commercially available products, EOCN-1020, EOCN-102S can be exemplified. , EOCN-103S, XD-1000, NC-2000-L, EPPN-201, GAN, NC6000 (the above are manufactured by Nippon Kayaku). Moreover, the crosslinking agent of the structure shown below can also be used preferably.

[化10] [Chemical 10]

相對於含有矽原子的化合物100質量份,交聯劑的調配 量較佳為0.1質量份~50質量份,更佳為0.1質量份~30質量份,進而更佳為1質量份~20質量份。交聯劑可為一種,亦可為兩種以上。於為兩種以上的情況下,較佳為合計量成為所述範圍。 Blending of a crosslinking agent to 100 parts by mass of a compound containing a silicon atom The amount is preferably from 0.1 to 50 parts by mass, more preferably from 0.1 to 30 parts by mass, and even more preferably from 1 to 20 parts by mass. The crosslinking agent may be one kind, or two or more kinds. In the case of two or more types, the total amount is preferably in the range.

另外,較佳為於本實施形態的暫時接著劑組成物中調配觸媒。觸媒為硬化觸媒,可例示酸酐等,較佳為雙(第三丁基磺醯基)重氮甲烷(和光純藥工業製造,BSDM)、四氫鄰苯二甲酸酐(新日本理化製造,理化酸(RIKACID)HH-A)。相對於含有矽原子的化合物100質量份,觸媒可以0.001質量份~10質量份的範圍調配。所述觸媒可僅使用一種,亦可使用兩種以上。 Moreover, it is preferable to mix | blend a catalyst with the temporary adhesive composition of this embodiment. The catalyst is a hardening catalyst, and an acid anhydride can be exemplified, preferably bis (third butylsulfonyl) diazomethane (manufactured by Wako Pure Chemical Industries, BSDM), tetrahydrophthalic anhydride (manufactured by Nippon Physicochemical) , Physical and chemical acid (RIKACID) HH-A). The catalyst can be prepared in a range of 0.001 to 10 parts by mass with respect to 100 parts by mass of the compound containing a silicon atom. The catalyst may be used alone, or two or more catalysts may be used.

作為本發明中使用的含有矽原子的化合物的較佳的第二實施形態,可例示含有矽原子的化合物具有Si-H結構的態樣。此處,所謂Si-H結構,是指矽原子的四個結合鍵中的至少一個與氫原子鍵結的結構。矽原子的其餘的結合鍵可與氫原子鍵結,亦可與其他原子(例如氧原子或碳原子等)鍵結。 As a preferable second embodiment of the silicon atom-containing compound used in the present invention, a state in which the silicon atom-containing compound has a Si-H structure can be exemplified. Here, the Si-H structure refers to a structure in which at least one of four bonding bonds of a silicon atom is bonded to a hydrogen atom. The remaining bonding bonds of the silicon atom may be bonded to a hydrogen atom, or may be bonded to other atoms (such as an oxygen atom or a carbon atom).

第二實施形態中,暫時接著劑組成物較佳為包含觸媒,且除具有所述Si-H結構並含有矽原子的化合物以外,亦包含含有矽原子的化合物且含有乙烯基的化合物(即,含有矽原子及乙烯基的化合物)、及其他的含有乙烯基的化合物(即,不含矽原子且含有乙烯基的化合物)中的至少一種。第二實施形態中,暫時接著劑組成物較佳為至少包含具有Si-H結構並含有矽原子的化合物及含有矽原子及乙烯基的化合物。進而,具有Si-H結構並含有矽原子的化合物以及含有矽原子及乙烯基的化合物分別較佳為具有矽氧 烷鍵。 In the second embodiment, the temporary adhesive composition preferably contains a catalyst, and in addition to the compound having the Si-H structure and containing a silicon atom, the compound containing a silicon atom and a compound containing a vinyl group (i.e. At least one of a compound containing a silicon atom and a vinyl group), and another compound containing a vinyl group (that is, a compound containing a silicon atom and a vinyl group). In the second embodiment, the temporary adhesive composition preferably contains at least a compound having a Si-H structure and containing a silicon atom, and a compound containing a silicon atom and a vinyl group. Further, the compound having a Si-H structure and containing a silicon atom, and the compound containing a silicon atom and a vinyl group, respectively, preferably have silicon oxide. Alkanes.

首先,對含有矽原子的化合物具有Si-H結構的態樣進行說明。於含有矽原子的化合物具有Si-H的情況下,較佳為含有矽原子的化合物較佳由下述式表示。 First, a state in which a compound containing a silicon atom has a Si-H structure will be described. When the compound containing a silicon atom has Si-H, the compound containing a silicon atom is preferably represented by the following formula.

所述式中,v為0~1的範圍內,u為0~2的範圍內,z為0~1的範圍內,R1、R2、R3、R7、R8、R9及R10分別獨立地表示有機基,當(u+v+z)的合計為0時,R8、R9及R10的至少一個為氫原子。p為正的整數。 In the formula, v is in the range of 0 to 1, u is in the range of 0 to 2, and z is in the range of 0 to 1. R 1 , R 2 , R 3 , R 7 , R 8 , R 9 and R 10 each independently represents an organic group, and when the total of (u + v + z) is 0, at least one of R 8 , R 9, and R 10 is a hydrogen atom. p is a positive integer.

於所述式中,p較佳為1~100的整數,更佳為20~80的整數。 In the formula, p is preferably an integer of 1 to 100, and more preferably an integer of 20 to 80.

作為具有Si-H結構並含有矽原子的化合物的例子,可例示道康寧公司(Dow Corning Corp.)製造的F1-3546或6-3570。 As an example of a compound having a Si-H structure and containing a silicon atom, F1-3546 or 6-3570 manufactured by Dow Corning Corp. can be exemplified.

具有Si-H結構並含有矽原子的化合物可僅使用一種,亦可使用兩種以上。 The compound having a Si-H structure and containing a silicon atom may be used alone, or two or more kinds may be used.

其次,對含有乙烯基的化合物進行說明。本發明中使用的含有乙烯基的化合物可為單體,亦可為寡聚物,還可為聚合物, 較佳為寡聚物或聚合物,含有乙烯基的化合物的重量平均分子量較佳為1,000以上,更佳為3,000以上,亦可為5,000以上,進而亦可為10,000以上。作為重量平均分子量的上限值,較佳為500,000以下,更佳為100,000以下。 Next, the vinyl-containing compound will be described. The vinyl-containing compound used in the present invention may be a monomer, an oligomer, or a polymer. It is preferably an oligomer or a polymer, and the weight-average molecular weight of the vinyl-containing compound is preferably 1,000 or more, more preferably 3,000 or more, 5,000 or more, or 10,000 or more. The upper limit of the weight average molecular weight is preferably 500,000 or less, and more preferably 100,000 or less.

含有乙烯基的化合物較佳為具有矽氧烷鍵,更佳為依據下述式E1而包含C1、C2及C3此三個含有矽氧烷鍵的重複單元構成成分的至少一個。 The vinyl-containing compound preferably has a siloxane bond, and more preferably contains at least one of three siloxane bond-containing repeating unit constituents based on the following formula E1.

式E1 E(C1)m(C2)n(C3)oE E1 E (C1) m (C2) n (C3) o E

所述式E1中,E分別獨立地表示封端(end-capping)基,m、n及o分別獨立地表示含有乙烯基的化合物中的各構成成分的莫耳比,m為0.025~1.0的範圍,n為0.0~0.95的範圍,o為0.0~0.60的範圍。E及(C1)的至少一者包含乙烯基。 In the formula E1, E each independently represents an end-capping group, m, n, and o each independently represent a mole ratio of each constituent in a vinyl-containing compound, and m is 0.025 to 1.0. Range, n is in the range of 0.0 to 0.95, and o is in the range of 0.0 to 0.60. At least one of E and (C1) includes a vinyl group.

所述式E1較佳為由以下的式E2表示。 The formula E1 is preferably represented by the following formula E2.

式E2 E2

所述式E2中,R1、R2、R3、R4、R5、R15及R16分別獨立地表示有機基,R2、R3、R4、R15及R16的至少一個包含乙烯基。R6表示氫原子或具有1個~4個碳原子的烴基,v為0~1的範圍內,u為0~2的範圍內,m、n及o分別獨立地表示含有乙烯基的化合物中的各構成成分的莫耳比,m為0.025~1.0的範圍,n為0.0~0.95的範圍,o為0.0~0.60的範圍。 In the formula E2, R 1 , R 2 , R 3 , R 4 , R 5 , R 15, and R 16 each independently represent an organic group, and at least one of R 2 , R 3 , R 4 , R 15, and R 16 Contains vinyl. R 6 represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; v is in the range of 0 to 1; u is in the range of 0 to 2; m, n, and o each independently represents a compound containing a vinyl group; The molar ratio of each constituent component of m is in the range of 0.025 to 1.0, n is in the range of 0.0 to 0.95, and o is in the range of 0.0 to 0.60.

R2、R3、R4、R15及R16的至少一個較佳為包含乙烯基的脂肪族基或芳基。關於脂肪族基的碳數,較佳為碳數1~8的烷基,更佳為碳數1~4的烷基。另外,芳基較佳為碳數6~12的芳基。乙烯基較佳為取代於脂肪族基或芳基的氫原子上而存在。 At least one of R 2 , R 3 , R 4 , R 15 and R 16 is preferably an aliphatic group or an aryl group containing a vinyl group. The carbon number of the aliphatic group is preferably an alkyl group having 1 to 8 carbon atoms, and more preferably an alkyl group having 1 to 4 carbon atoms. The aryl group is preferably an aryl group having 6 to 12 carbon atoms. The vinyl group is preferably substituted by a hydrogen atom of an aliphatic group or an aryl group.

作為此種化合物的例子,可例示道康寧公司(Dow Corning Corp.)製造的SFD-119、SFD-120及6-3444。 As examples of such a compound, SFD-119, SFD-120, and 6-3444 manufactured by Dow Corning Corp. can be exemplified.

於第二實施形態中,相對於具有Si-H結構並含有矽原子的化合物100質量份,含有乙烯基的化合物的調配量較佳為20質量份~500質量份,更佳為40質量份~300質量份。 In the second embodiment, the compounding amount of the vinyl-containing compound is preferably 20 to 500 parts by mass, more preferably 40 parts by mass to 100 parts by mass of the compound having a Si-H structure and containing a silicon atom. 300 parts by mass.

含有乙烯基的化合物可僅使用一種,亦可使用兩種以上。 The vinyl-containing compound may be used alone or in combination of two or more.

對第二實施形態中所使用的觸媒進行說明。第二實施形態中,觸媒是以促進含有矽原子的化合物與含有乙烯基的化合物的熱硬化反應(特別是藉由150℃以上的熱而進行硬化的反應)而調配。 The catalyst used in the second embodiment will be described. In the second embodiment, the catalyst is formulated so as to promote a thermosetting reaction of the compound containing a silicon atom and a compound containing a vinyl group (in particular, a reaction for hardening by heat of 150 ° C. or higher).

觸媒可選自氯化鉑酸、使脂肪族不飽和有機矽化合物與氯化 鉑酸或二氯化鉑反應而獲得的含有鉑的觸媒(例如,鉑(0)-1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷錯合物)、乙醯丙酮鉑及可於矽氫化反應中使用的任意的其他過渡金屬觸媒的群組。 The catalyst may be selected from the group consisting of chloroplatinic acid, an aliphatic unsaturated organosilicon compound and chlorination Platinum-containing catalysts obtained by the reaction of platinum acid or platinum dichloride (for example, platinum (0) -1,3-divinyl-1,1,3,3-tetramethyldisilaxane complex ), Acetoacetone platinum, and any other transition metal catalyst that can be used in the hydrosilylation reaction.

觸媒的調配量可根據觸媒的種類等適當地規定。關於觸媒的調配量,於進行調配的情況下,例如相對於暫時接著劑組成物的質量,可以0.01質量%~40質量%的比例調配。觸媒可僅使用一種,亦可使用兩種以上。 The amount of the catalyst to be blended can be appropriately determined according to the type of the catalyst and the like. Regarding the blending amount of the catalyst, when blending, for example, it can be blended at a ratio of 0.01% by mass to 40% by mass with respect to the mass of the temporary adhesive composition. The catalyst may be used alone, or two or more catalysts may be used.

另外,第二實施形態中,為了推遲觸媒反應的開始,亦可包含可與觸媒進行相互作用的阻礙劑。阻礙劑可例示:順丁烯二酸二烯丙酯、乙炔基環己醇、雙(2-甲氧基-1-甲基乙基)順丁烯二酸酯及N,N,N’,N’-四甲基乙二胺。阻礙劑可以觸媒的0.01質量%~40質量%的比例調配。阻礙劑可僅使用一種,亦可使用兩種以上。 In addition, in the second embodiment, in order to delay the start of the catalyst reaction, an inhibitor that can interact with the catalyst may be included. Examples of the blocking agent include diallyl maleate, ethynyl cyclohexanol, bis (2-methoxy-1-methylethyl) maleate, and N, N, N ', N'-tetramethylethylenediamine. The inhibitor can be formulated at a ratio of 0.01% to 40% by mass of the catalyst. The blocking agent may be used alone or in combination of two or more.

另外,作為所述第二實施形態中敘述的具有Si-H結構並含有矽原子的化合物,亦可使用低分子化合物。作為低分子化合物,可例示以下的化合物。 In addition, as the compound having a Si-H structure and containing a silicon atom described in the second embodiment, a low-molecular compound may be used. Examples of the low-molecular compound include the following compounds.

除所述以外,作為本發明中所使用的含有矽原子的化合物,亦可使用日本專利特開2012-188650號公報的請求項1等所記載的含有環氧基的高分子化合物、及日本專利特開2013-82801號公報的請求項1等所記載的含有非芳香族飽和烴基的有機聚矽氧烷,該些內容被併入至本說明書中。 In addition to the above, as the silicon atom-containing compound used in the present invention, an epoxy group-containing polymer compound described in claim 1 of Japanese Patent Laid-Open No. 2012-188650 and the like, and a Japanese patent may be used. The non-aromatic saturated hydrocarbon group-containing organopolysiloxane described in claim 1 and the like of Japanese Patent Application Laid-Open No. 2013-82801 is incorporated into this specification.

相對於除溶劑以外的暫時接著劑組成物的質量,暫時接著劑組成物中的含有矽原子的化合物的含量較佳為50.00質量%~99.99質量%,更佳為70.00質量%~99.99質量%,特佳為88.00質量%~99.99質量%。若含有矽原子的化合物的含量為所述範圍,則接著性及剝離性更優異。 The content of the silicon atom-containing compound in the temporary adhesive composition is preferably 50.00% to 99.99% by mass, and more preferably 70.00% to 99.99% by mass relative to the mass of the temporary adhesive composition other than the solvent. Particularly preferred is 88.00% to 99.99% by mass. When the content of the silicon atom-containing compound is within the above range, the adhesiveness and peelability are more excellent.

另外,暫時接著劑組成物中的含有矽原子的化合物可僅為一種,亦可為多種的組合。該情況下,較佳為所述含量的合計量為所述範圍。 In addition, the compound containing a silicon atom in the temporary adhesive composition may be only one kind, or a combination of plural kinds. In this case, the total amount of the content is preferably in the range.

相對於暫時接著劑組成物中所含的樹脂的合計量,本發明中使用的暫時接著劑組成物中的含有氟原子及矽原子中的至少一者的化合物的合計含量較佳為0.009質量%以上,更佳為0.0001質量%以上,進而更佳為0.001質量%以上,特佳為0.005質量%以上,尤佳為0.01質量%以上。另外,作為上限值,較佳為10質量%以下,進而較佳為5質量%以下,更佳為小於2.5質量%。 The total content of the compound containing at least one of a fluorine atom and a silicon atom in the temporary adhesive composition used in the present invention is preferably 0.009% by mass based on the total amount of the resin contained in the temporary adhesive composition. Above, more preferably 0.0001% by mass or more, even more preferably 0.001% by mass or more, particularly preferably 0.005% by mass or more, particularly preferably 0.01% by mass or more. The upper limit is preferably 10% by mass or less, more preferably 5% by mass or less, and even more preferably less than 2.5% by mass.

若含有氟原子及矽原子中的至少一者的化合物的合計含量為所述範圍,則接著性及剝離性更優異。特別是本發明中,即便暫時接著劑組成物的量少,亦可達成本發明的效果,就該點而言價 值高。 When the total content of the compound containing at least one of a fluorine atom and a silicon atom is within the above range, the adhesiveness and peelability are more excellent. In particular, in the present invention, even if the amount of the temporary adhesive composition is small, the effect of the present invention can be achieved. The value is high.

含有氟原子及矽原子中的至少一者的化合物可為單獨一種,亦可併用兩種以上。於併用兩種以上的情況下,較佳為合計的含量為所述範圍。 The compound containing at least one of a fluorine atom and a silicon atom may be used alone or in combination of two or more. When two or more types are used in combination, the total content is preferably in the above range.

<<抗氧化劑>> << Antioxidant >>

就防止因加熱時的氧化引起的彈性體的低分子化或凝膠化的觀點而言,本發明中使用的暫時接著劑組成物可含有抗氧化劑。作為抗氧化劑,可使用酚系抗氧化劑、硫系抗氧化劑、磷系抗氧化劑、醌系抗氧化劑、胺系抗氧化劑等。 The temporary adhesive composition used in the present invention may contain an antioxidant from the viewpoint of preventing the low molecular weight or gelation of the elastomer due to oxidation during heating. As the antioxidant, a phenol-based antioxidant, a sulfur-based antioxidant, a phosphorus-based antioxidant, a quinone-based antioxidant, an amine-based antioxidant, or the like can be used.

作為酚系抗氧化劑,例如可列舉:對甲氧基苯酚、2,6-二-第三丁基-4-甲基苯酚、巴斯夫(BASF)(股)製造的「易璐諾斯(Irganox)1010」、「易璐諾斯(Irganox)1330」、「易璐諾斯(Irganox)3114」、「易璐諾斯(Irganox)1035」、住友化學(股)製造的「蘇米萊澤(Sumilizer)MDP-S」、「蘇米萊澤(Sumilizer)GA-80」等。 Examples of the phenolic antioxidant include p-methoxyphenol, 2,6-di-tert-butyl-4-methylphenol, and "Irganox" manufactured by BASF. 1010 "," Irganox 1330 "," Irganox 3114 "," Irganox 1035 "," Sumilizer "manufactured by Sumitomo Chemical Co., Ltd. ) MDP-S "," Sumilizer GA-80 ", etc.

作為硫系抗氧化劑,例如可列舉:3,3'-硫代二丙酸二硬脂基酯、住友化學(股)製造的「蘇米萊澤(Sumilizer)TPM」、「蘇米萊澤(Sumilizer)TPS」、「蘇米萊澤(Sumilizer)TP-D」等。 Examples of the sulfur-based antioxidant include 3,3'-thiodipropionate distearyl, "Sumilizer TPM" manufactured by Sumitomo Chemical Co., Ltd., and "Sumilizer ( Sumilizer) TPS "," Sumilizer TP-D ", etc.

作為磷系抗氧化劑,例如可列舉:三(2,4-二-第三丁基苯基)亞磷酸鹽、雙(2,4-二-第三丁基苯基)季戊四醇二亞磷酸鹽、聚(二丙二醇)苯基亞磷酸鹽、二苯基異癸基亞磷酸鹽、2-乙基己基二苯基亞磷酸鹽、三苯基亞磷酸鹽、巴斯夫(BASF)(股)製造的「易璐佛斯(Irgafos)168」、「易璐佛斯(Irgafos)38」等。 Examples of the phosphorus-based antioxidant include tris (2,4-di-third-butylphenyl) phosphite, bis (2,4-di-third-butylphenyl) pentaerythritol diphosphite, Poly (dipropylene glycol) phenylphosphite, diphenylisodecylphosphite, 2-ethylhexyldiphenylphosphite, triphenylphosphite, BASF "Irgafos 168", "Irgafos 38" and so on.

作為醌系抗氧化劑,例如可列舉對苯醌、2-第三丁基-1,4-苯醌等。 Examples of the quinone-based antioxidant include p-benzoquinone and 2-tert-butyl-1,4-benzoquinone.

作為胺系抗氧化劑,例如可列舉二甲基苯胺或啡噻嗪等。 Examples of the amine-based antioxidant include dimethylaniline and phenothiazine.

抗氧化劑較佳為易璐諾斯(Irganox)1010、易璐諾斯(Irganox)1330、3,3'-硫代二丙酸二硬脂基酯、蘇米萊澤(Sumilizer)TP-D,更佳為易璐諾斯(Irganox)1010、易璐諾斯(Irganox)1330,特佳為易璐諾斯(Irganox)1010。 The antioxidant is preferably Irganox 1010, Irganox 1330, 3,3'-distearyl thiodipropionate, Sumilizer TP-D, More preferred are Irganox 1010, Irganox 1330, and particularly preferred is Irganox 1010.

另外,所述抗氧化劑中,較佳為併用酚系抗氧化劑與硫系抗氧化劑或磷系抗氧化劑,特佳為併用酚系抗氧化劑與硫系抗氧化劑。特別是於使用具有苯乙烯結構的熱塑性彈性體作為彈性體的情況下,較佳為併用酚系抗氧化劑與硫系抗氧化劑。藉由設為此種組合,而可期待可效率良好地抑制因氧化反應引起的彈性體的劣化的效果。於併用酚系抗氧化劑與硫系抗氧化劑的情況下,酚系抗氧化劑與硫系抗氧化劑的質量比較佳為酚系抗氧化劑:硫系抗氧化劑=95:5~5:95,更佳為25:75~75:25。 Among the antioxidants, it is preferable to use a phenol-based antioxidant and a sulfur-based antioxidant or a phosphorus-based antioxidant in combination, and it is particularly preferable to use a phenol-based antioxidant and a sulfur-based antioxidant in combination. In particular, when a thermoplastic elastomer having a styrene structure is used as the elastomer, it is preferable to use a phenol-based antioxidant and a sulfur-based antioxidant in combination. By setting it as such a combination, the effect which can suppress the deterioration of the elastomer by an oxidation reaction efficiently can be expected. In the case of using a phenol-based antioxidant and a sulfur-based antioxidant together, the quality of the phenol-based antioxidant and the sulfur-based antioxidant is better: phenol-based antioxidant: sulfur-based antioxidant = 95: 5 ~ 5: 95, more preferably 25: 75 ~ 75: 25.

作為抗氧化劑的組合,較佳為易璐諾斯(Irganox)1010與蘇米萊澤(Sumilizer)TP-D、易璐諾斯(Irganox)1330與蘇米萊澤(Sumilizer)TP-D及蘇米萊澤(Sumilizer)GA-80與蘇米萊澤(Sumilizer)TP-D,更佳為易璐諾斯(Irganox)1010與蘇米萊澤(Sumilizer)TP-D、易璐諾斯(Irganox)1330與蘇米萊澤(Sumilizer)TP-D,特佳為易璐諾斯(Irganox)1010與蘇米萊澤(Sumilizer)TP-D。 As a combination of antioxidants, Irganox 1010 and Sumilizer TP-D, Irganox 1330 and Sumilizer TP-D and Su Sumilizer GA-80 and Sumilizer TP-D, more preferably Irganox 1010 and Sumilizer TP-D, Irganox 1330 and Sumilizer TP-D, particularly preferred is Irganox 1010 and Sumilizer TP-D.

就防止加熱中的昇華的觀點而言,抗氧化劑的分子量較佳為400以上,進而更佳為600以上,特佳為750以上。 From the viewpoint of preventing sublimation during heating, the molecular weight of the antioxidant is preferably 400 or more, more preferably 600 or more, particularly preferably 750 or more.

於暫時接著劑組成物具有抗氧化劑的情況下,相對於暫時接著劑組成物的總固體成分,抗氧化劑的含量較佳為0.001質量%~20.0質量%,更佳為0.005質量%~10.0質量%。 In the case where the temporary adhesive composition has an antioxidant, the content of the antioxidant is preferably 0.001% to 20.0% by mass, and more preferably 0.005% to 10.0% by mass relative to the total solid content of the temporary adhesive composition. .

抗氧化劑可僅為一種,亦可為兩種以上。於抗氧化劑為兩種以上的情況下,較佳為其合計為所述範圍。 The antioxidant may be only one kind, or two or more kinds. When there are two or more antioxidants, it is preferable that the total thereof is within the above range.

<<自由基聚合性化合物>> << Radical Polymerizable Compound >>

本發明中使用的暫時接著劑組成物亦較佳為包含自由基聚合性化合物。藉由使用包含自由基聚合性化合物的暫時接著劑組成物,而容易抑制加熱時的暫時接著劑層的流動變形。因此,例如於對研磨加工基板後的積層體進行加熱處理的情況下等,可抑制加熱時的暫時接著劑層的流動變形,從而可有效地抑制翹曲的產生。另外,可形成具有硬度的暫時接著劑層,因此即便於研磨加工基板時局部地施加壓力,暫時接著劑層亦不易發生變形,平坦研磨性優異。 The temporary adhesive composition used in the present invention also preferably contains a radical polymerizable compound. By using a temporary adhesive composition containing a radically polymerizable compound, it is easy to suppress the flow deformation of the temporary adhesive layer during heating. Therefore, for example, in a case where the laminated body after the substrate is polished is subjected to a heat treatment, the temporary deformation of the adhesive layer during heating can be suppressed, and the occurrence of warpage can be effectively suppressed. In addition, since a temporary adhesive layer having hardness can be formed, even if a local pressure is applied during polishing of the substrate, the temporary adhesive layer is not easily deformed, and is excellent in flat abrasiveness.

於本發明中,自由基聚合性化合物為具有自由基聚合性基的化合物,且可使用可藉由自由基進行聚合的公知的自由基聚合性化合物。此種化合物為於產業領域中廣泛為人所知者,於本發明中可並無特別限定地使用該些。該些例如可為單體、預聚物、寡聚物或該些的混合物及該些的多聚體等化學形態的任一種。作為自由基聚合性化合物,可參考日本專利特開2015-087611號公報 的段落0099~段落0180的記載,該些內容被併入至本說明書中。 In the present invention, the radically polymerizable compound is a compound having a radically polymerizable group, and a known radically polymerizable compound that can be polymerized by a radical can be used. Such compounds are widely known in the industrial field, and these compounds can be used without particular limitation in the present invention. These may be, for example, any of chemical forms such as a monomer, a prepolymer, an oligomer, a mixture of these, and a polymer of these. As a radical polymerizable compound, refer to Japanese Patent Laid-Open No. 2015-087611 The descriptions of paragraphs 0099 to 0180 are incorporated into this specification.

另外,作為自由基聚合性化合物,亦較佳為如日本專利特公昭48-41708號公報、日本專利特開昭51-37193號公報、日本專利特公平2-32293號公報、日本專利特公平2-16765號公報中所記載的丙烯酸胺基甲酸酯類或日本專利特公昭58-49860號公報、日本專利特公昭56-17654號公報、日本專利特公昭62-39417號公報、日本專利特公昭62-39418號公報所記載的具有環氧乙烷系骨架的胺基甲酸酯化合物類。進而,亦可使用日本專利特開昭63-277653號公報、日本專利特開昭63-260909號公報、日本專利特開平1-105238號公報中所記載的分子內具有胺基結構或硫醚結構的加成聚合性單體類作為自由基聚合性化合物。 In addition, as the radical polymerizable compound, for example, Japanese Patent Publication No. 48-41708, Japanese Patent Publication No. 51-37193, Japanese Patent Publication No. 2-32293, and Japanese Patent Publication No. 2 Acrylic urethanes disclosed in -16765 or Japanese Patent Publication No. 58-49860, Japanese Patent Publication No. 56-17654, Japanese Patent Publication No. 62-39417, and Japanese Patent Publication No. 62 The urethane compounds having an ethylene oxide-based skeleton described in Japanese Patent No. -39418. Furthermore, JP-A-63-277653, JP-A-63-260909, and JP-A-105238 can be used to have an amine structure or a thioether structure in the molecule. Addition polymerizable monomers are used as radical polymerizable compounds.

作為自由基聚合性化合物的市售品,可列舉:胺基甲酸酯寡聚物UAS-10、UAB-140(山陽國策紙漿(Sanyo Kokusaku Pulp)公司製造);NK酯M-40G、NK酯4G、NK酯A-9300、NK酯M-9300、NK酯A-TMMT、NK酯A-DPH、NK酯A-BPE-4、UA-7200(新中村化學工业(股)製造);DPHA-40H(日本化藥公司製造);UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(共榮社化學(股)製造);布蘭莫(Blemmer)PME400(日油(股)製造)等。 Examples of commercially available products of the radical polymerizable compound include urethane oligomers UAS-10 and UAB-140 (manufactured by Sanyo Kokusaku Pulp); NK ester M-40G, and NK ester 4G, NK ester A-9300, NK ester M-9300, NK ester A-TMMT, NK ester A-DPH, NK ester A-BPE-4, UA-7200 (manufactured by Shin Nakamura Chemical Industry Co., Ltd.); DPHA- 40H (manufactured by Nippon Kayaku Co., Ltd.); UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.); Blemmer PME400 (Manufactured by Nippon Oil Co., Ltd.), etc.

於本發明中,就耐熱性的觀點而言,自由基聚合性化合物較佳為具有下述(P-1)~(P-4)所表示的部分結構的至少一種,更佳為具有下述(P-3)所表示的部分結構。式中的*為連結鍵。 In the present invention, from the viewpoint of heat resistance, the radical polymerizable compound preferably has at least one of the partial structures represented by the following (P-1) to (P-4), and more preferably has the following (P-3) part of the structure. * In the formula is a link key.

作為具有所述部分結構的自由基聚合性化合物的具體例,例如可列舉三羥甲基丙烷三(甲基)丙烯酸酯、異氰脲酸環氧乙烷改質二(甲基)丙烯酸酯、異氰脲酸環氧乙烷改質三(甲基)丙烯酸酯、異氰脲酸三烯丙酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二羥甲基丙烷四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯等,於本發明中,可特佳地使用該些自由基聚合性化合物。 Specific examples of the radical polymerizable compound having the partial structure include trimethylolpropane tri (meth) acrylate, isocyanurate ethylene oxide modified di (meth) acrylate, Isocyanurate ethylene oxide modified tri (meth) acrylate, triallyl isocyanurate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dimethylolpropane Tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, etc. are particularly preferred in the present invention. These radically polymerizable compounds are used.

於本發明中使用的暫時接著劑組成物中,就良好的接著性、平坦研磨性、剝離性、翹曲抑制的觀點而言,相對於除了溶劑以外的暫時接著劑組成物的質量,添加自由基聚合性化合物時的含量較佳為1質量%~50質量%,更佳為1質量%~30質量%,進而更佳為5質量%~30質量%。自由基聚合性化合物可單獨使用一種,亦可混合使用兩種以上。 In the temporary adhesive composition used in the present invention, from the viewpoints of good adhesion, flat abrasiveness, peelability, and warpage suppression, it is free to add to the quality of the temporary adhesive composition other than the solvent. The content of the base polymerizable compound is preferably 1% by mass to 50% by mass, more preferably 1% by mass to 30% by mass, and even more preferably 5% by mass to 30% by mass. The radical polymerizable compound may be used singly or in combination of two or more kinds.

另外,於本發明中使用的暫時接著劑組成物中,添加自由基聚合性化合物時的彈性體與自由基聚合性化合物的質量比例較佳 為彈性體:自由基聚合性化合物=98:2~10:90,更佳為95:5~30:70,特佳為90:10~50:50。若彈性體與自由基聚合性化合物的質量比例為所述範圍,則可形成接著性、平坦研磨性、剝離性及翹曲抑制優異的暫時接著劑層。 In addition, in the temporary adhesive composition used in the present invention, the mass ratio of the elastomer and the radical polymerizable compound when a radical polymerizable compound is added is preferred. Elastomer: radical polymerizable compound = 98: 2 ~ 10: 90, more preferably 95: 5 ~ 30: 70, particularly preferably 90: 10 ~ 50: 50. When the mass ratio of the elastomer to the radically polymerizable compound is within the above range, a temporary adhesive layer having excellent adhesion, flat abrasiveness, peelability, and warpage suppression can be formed.

<<其他成分>> << Other ingredients >>

在不損及本發明的效果的範圍內,本發明中使用的暫時接著劑組成物視需要可調配各種添加物,例如不含氟原子及矽原子的界面活性劑、塑化劑、硬化劑、所述以外的觸媒、填充劑、密接促進劑、紫外線吸收劑、抗凝聚劑、彈性體或其他高分子化合物等。於調配該些添加劑的情況下,其調配量分別較佳為暫時接著劑組成物的總固體成分的3質量%以下,更佳為1質量%以下。調配時的下限值分別較佳為0.0001質量%以上。另外,該些添加劑的合計調配量較佳為暫時接著劑組成物的總固體成分的10質量%以下,更佳為3質量%以下。調配該些成分時的合計調配量的下限值較佳為0.0001質量%以上。 To the extent that the effects of the present invention are not impaired, the temporary adhesive composition used in the present invention may optionally be formulated with various additives such as a surfactant, a plasticizer, a hardener, Other catalysts, fillers, adhesion promoters, ultraviolet absorbers, anti-agglomerating agents, elastomers, or other polymer compounds. When these additives are blended, the blending amounts thereof are each preferably 3% by mass or less, and more preferably 1% by mass or less of the total solid content of the temporary adhesive composition. The lower limit values at the time of blending are each preferably 0.0001% by mass or more. The total blended amount of these additives is preferably 10% by mass or less, and more preferably 3% by mass or less of the total solid content of the temporary adhesive composition. The lower limit of the total blended amount when these components are blended is preferably 0.0001% by mass or more.

本發明中使用的暫時接著劑組成物較佳為不含金屬等雜質。作為該些材料中所含的雜質的含量,較佳為1質量ppm以下,更佳為1質量ppb以下,進而更佳為100質量ppt以下,尤佳為10質量ppt以下,特佳為實質上不含(測定裝置的檢測界限以下)。 The temporary adhesive composition used in the present invention is preferably free of impurities such as metals. The content of impurities contained in these materials is preferably 1 mass ppm or less, more preferably 1 mass ppb or less, still more preferably 100 mass ppt or less, particularly preferably 10 mass ppt or less, and particularly preferably substantially Not included (below the detection limit of the measuring device).

作為將金屬等雜質自暫時接著劑組成物去除的方法,例如可列舉使用過濾器的過濾。作為過濾器孔徑,較佳為細孔徑10nm 以下,更佳為5nm以下,進而更佳為3nm以下。關於過濾器的材質,較佳為聚四氟乙烯製、聚乙烯製、尼龍製的過濾器。過濾器可使用利用有機溶劑預先清洗者。過濾器過濾步驟中,可將多種過濾器串聯或並聯連接而使用。於使用多種過濾器的情況下,可組合使用孔徑及/或材質不同的過濾器。另外,亦可將各種材料多次過濾,多次過濾的步驟亦可為循環過濾步驟。 Examples of a method for removing impurities such as metals from the temporary adhesive composition include filtration using a filter. The filter pore diameter is preferably a fine pore diameter of 10 nm Hereinafter, it is more preferably 5 nm or less, and still more preferably 3 nm or less. The material of the filter is preferably a filter made of polytetrafluoroethylene, polyethylene, or nylon. The filter may be previously cleaned with an organic solvent. In the filter filtration step, various filters can be used in series or in parallel. When multiple filters are used, filters with different pore sizes and / or materials can be used in combination. In addition, various materials may be filtered multiple times, and the step of multiple filtering may also be a cyclic filtering step.

另外,作為減少暫時接著劑組成物中所含的金屬等雜質的方法,可列舉如下等方法:選擇金屬含量少的原料作為構成暫時接著劑組成物的原料;對構成暫時接著劑組成物的原料進行過濾器過濾;於利用聚四氟乙烯等於裝置內形成內襯而盡可能地抑制污染(contamination)的條件下進行蒸餾。對構成暫時接著劑組成物的原料進行的過濾器過濾中的較佳條件與所述條件相同。 In addition, as a method for reducing impurities such as metals contained in the temporary adhesive composition, methods such as: selecting a raw material with a small metal content as a raw material constituting the temporary adhesive composition; and selecting a raw material constituting the temporary adhesive composition Filtering is performed; distillation is performed under conditions that use polytetrafluoroethylene equal to forming a lining in the device to suppress contamination as much as possible. The preferable conditions in the filter filtration of the raw material which comprises a temporary adhesive composition are the same as the said conditions.

除了過濾器過濾以外,可使用吸附材料進行雜質的去除,亦可組合使用過濾器過濾與吸附材料。作為吸附材料,可使用公知的吸附材料,例如可使用矽膠、沸石等無機系吸附材料、或活性碳等有機系吸附材料。 In addition to filter filtration, impurities can be removed using an adsorbent, or a combination of filter filtration and adsorbent can be used. As the adsorbent, a known adsorbent can be used. For example, an inorganic adsorbent such as silica gel and zeolite, or an organic adsorbent such as activated carbon can be used.

<暫時接著劑組成物的製備> <Preparation of temporary adhesive composition>

本發明中使用的暫時接著劑組成物可將所述各成分加以混合而製備。各成分的混合通常於0℃~100℃的範圍內進行。另外,於將各成分加以混合後,例如較佳為利用過濾器進行過濾。過濾可以多階段進行,亦可反覆進行多次。另外,亦可對經過濾的液體進行再過濾。 The temporary adhesive composition used in the present invention can be prepared by mixing the respective components. Mixing of each component is performed normally in the range of 0 degreeC-100 degreeC. Moreover, after mixing each component, it is preferable to filter with a filter, for example. Filtration can be performed in multiple stages or iteratively. Alternatively, the filtered liquid may be refiltered.

作為過濾器,若為自先前以來用於過濾用途等的過濾器,則可無特別限定地使用。例如可列舉使用聚四氟乙烯(Polytetrafluoroethylene,PTFE)等氟樹脂、尼龍-6、尼龍-6,6等聚醯胺系樹脂、聚乙烯、聚丙烯(Polypropylene,PP)等聚烯烴樹脂(包含高密度、超高分子量的聚烯烴樹脂)等原材料的過濾器。該些原材料之中,較佳為聚丙烯(含有高密度聚丙烯)及尼龍。 The filter can be used without particular limitation as long as it has been used for filtering purposes and the like. Examples include the use of fluororesins such as polytetrafluoroethylene (PTFE), polyamide resins such as nylon-6, nylon-6,6, polyolefin resins such as polyethylene and polypropylene (including polypropylene) Density, ultra-high molecular weight polyolefin resin) and other raw material filters. Among these raw materials, polypropylene (containing high-density polypropylene) and nylon are preferred.

過濾器的孔徑例如適合的是0.003μm~5.0μm左右。藉由設為該範圍,可抑制過濾堵塞,並且可確實地去除組成物中所含的雜質或凝聚物等微細的異物。 The pore diameter of the filter is preferably about 0.003 μm to 5.0 μm, for example. By setting it as this range, clogging of a filter can be suppressed, and the fine foreign matter, such as an impurity and an aggregate, contained in a composition can be removed reliably.

當使用過濾器時,可組合不同的過濾器。此時,利用第一過濾器的過濾可僅為一次,亦可進行兩次以上。於組合不同的過濾器而進行兩次以上的過濾的情況下,較佳為第二次以後的孔徑與第一次的過濾的孔徑相同,或比第一次的過濾的孔徑小。另外,亦可於所述範圍內組合不同孔徑的第一過濾器。此處的孔徑可參照過濾器廠商的標稱值。作為市售的過濾器,例如可自日本頗爾(PALL)股份有限公司、愛多邦得科(Advantec)東洋股份有限公司、日本英特格(Entegris)股份有限公司(原日本密科裏(Mykrolis)股份有限公司)或北澤微濾器(Kitz Microfilter)股份有限公司等所提供的各種過濾器中選擇。 When using filters, different filters can be combined. At this time, the filtration using the first filter may be performed only once, or may be performed twice or more. When two or more filtrations are performed by combining different filters, it is preferable that the pore diameters of the second and subsequent pores are the same as or smaller than those of the first filtration. In addition, it is also possible to combine the first filters with different pore diameters within the range. The pore size here can refer to the nominal value of the filter manufacturer. As commercially available filters, for example, Pall Corporation (Japan), Advantec Toyo Corporation, Japan Entegris Corporation (formerly Japan Micore ( Mykrolis Co., Ltd.) or Kitz Microfilter Co., Ltd.

本發明中所獲得的半導體元件可使晶粒的溫度T1下的壓接前的位置與晶粒的溫度T1下的壓接後的位置的移動距離小 於100μm,進而可使所述移動距離小於50μm,特別可使所述移動距離小於30μm。關於下限值,理想為0μm,但3μm以上亦為足以實用的水準。 The semiconductor element obtained in the present invention enables the moving distance between the position before the crimping at the temperature T1 of the die and the position after the crimping at the temperature T1 of the die to be small. At 100 μm, the moving distance can be made smaller than 50 μm, and the moving distance can be made smaller than 30 μm. The lower limit value is preferably 0 μm, but a level of 3 μm or more is a practically sufficient level.

[實施例] [Example]

以下,藉由實施例對本發明進一步進行具體說明,只要不超出本發明的主旨,則本發明並不限定於以下的實施例。再者,只要無特別說明,則「份」、「%」為質量基準。 Hereinafter, the present invention will be further described in detail through examples. As long as the gist of the present invention is not exceeded, the present invention is not limited to the following examples. In addition, unless otherwise specified, "part" and "%" are quality standards.

<暫時接著劑組成物的製備> <Preparation of temporary adhesive composition>

將以下的組成物混合,並使用具有5μm孔徑的聚四氟乙烯製過濾器進行過濾,從而分別製備暫時接著劑組成物。 The following compositions were mixed and filtered using a polytetrafluoroethylene filter having a pore size of 5 μm to prepare a temporary adhesive composition, respectively.

<<暫時接著劑組成物的成分>> << The composition of the temporary adhesive composition >>

.表1所記載的樹脂 . Resin listed in Table 1

.易璐諾斯(Irganox)1010(巴斯夫(BASF)製造):1質量份 . Irganox 1010 (manufactured by BASF): 1 part by mass

.蘇米萊澤(Sumilizer)TP-D(住友化學(股)製造):1質量份 . Sumilizer TP-D (manufactured by Sumitomo Chemical Co., Ltd.): 1 part by mass

.美佳法(Megafac)F-557(迪愛生(DIC)(股)製造):0.3質量份 . Megafac F-557 (manufactured by DIC): 0.3 parts by mass

.溶媒(第三丁基苯(東洋合成工業(股)製造)):表1所記載的質量份 . Solvent (third butylbenzene (manufactured by Toyo Kogyo Co., Ltd.)): parts by mass shown in Table 1

將各實施例中使用的暫時接著劑組成物的組成示於以下。 The composition of the temporary adhesive composition used in each Example is shown below.

表1中記載的化合物如下所述。 The compounds described in Table 1 are as follows.

<熔融黏度的測定> <Measurement of melt viscosity>

暫時接著劑層的熔融黏度是依據以下的方法來測定。 The melt viscosity of the temporary adhesive layer is measured by the following method.

使暫時接著劑組成物於直徑20mm的PFA製培養皿中流延並 進行3天乾燥,然後於190℃下進行5分鐘加熱,自培養皿進行回收,藉此獲得直徑20mm、厚度300μm的評價用樣品。使用ARES-RDA(TA儀器(TA Instruments)公司製造),於昇溫速度10℃/min、測定頻率:10Hz、T1及T2的溫度下對評價用樣品進行測定。 The temporary adhesive composition was cast on a 20 mm diameter PFA dish and After drying for 3 days, heating at 190 ° C for 5 minutes, and recovering from a petri dish, an evaluation sample having a diameter of 20 mm and a thickness of 300 µm was obtained. ARES-RDA (manufactured by TA Instruments) was used to measure the samples for evaluation at a temperature rise rate of 10 ° C / min and a measurement frequency: 10 Hz, T1, and T2.

<實施例1~實施例9、實施例12~實施例15及比較例1~比較例3> <Example 1 to Example 9, Example 12 to Example 15 and Comparative Example 1 to Comparative Example 3>

作為載體基板,使用直徑12吋的矽晶圓(1吋為2.54cm),於其表面上,利用晶圓接合裝置(賽奈普斯(Synapse)V、東京電子(Tokyo Electron)(股)製造)形成暫時接著劑層。具體而言,將所述暫時接著劑組成物塗佈於載體基板,並使用加熱板,以160℃加熱3分鐘,進而以190℃加熱3分鐘,藉此於載體基板上形成暫時接著劑層。此時的暫時接著劑的膜厚為40μm。 As the carrier substrate, a silicon wafer with a diameter of 12 inches (2.54 cm in 1 inch) was used. On the surface, a wafer bonding device (Synapse V, Tokyo Electron) was used. ) Forming a temporary adhesive layer. Specifically, the temporary adhesive composition was coated on a carrier substrate, and heated at 160 ° C. for 3 minutes using a hot plate, and further heated at 190 ° C. for 3 minutes, thereby forming a temporary adhesive layer on the carrier substrate. The film thickness of the temporary adhesive at this time was 40 μm.

於載體基板的形成有暫時接著劑層的表面上,對於作為晶粒的經切割為10mm×10mm的矽晶圓(厚度775μm),使用倒裝晶片接合機(flip chip bonder)(TFC-3000,芝浦機電(SHIBAURA MECHATRONICS)(股)製造),於表3所記載的溫度(T1)下,以對晶粒施加的壓力成為0.1MPa的方式進行2秒壓接。 On the surface of the carrier substrate on which the temporary adhesive layer was formed, a 10 mm × 10 mm silicon wafer (thickness: 775 μm) was cut as a crystal grain using a flip chip bonder (TFC-3000, Shibaura Mechatronics Co., Ltd.) was crimped for 2 seconds at the temperature (T1) shown in Table 3 so that the pressure applied to the crystal grains became 0.1 MPa.

關於所獲得的積層體,如下述般對晶粒移位進行評價。 About the obtained laminated body, the crystal grain shift was evaluated as follows.

<評價1:晶粒移位> <Evaluation 1: Crystal grain shift>

對於所述積層體中的晶粒的頂點的移動距離(|頂點的座標的設計值-安裝後的頂點的座標|),使用晶圓自動外觀檢查裝置(神 鷹(Condor)203,康代(Camtek)公司製造)對全部晶粒的四個頂點進行測定,藉由以下基準對每一個晶粒的頂點的移動距離的總和進行評價。再者,設計值的頂點的座標與壓接前的頂點的座標一致,且所謂安裝後的頂點的座標,是指壓接後的頂點的座標。 For the moving distance of the vertices of the crystal grains in the laminated body (| the design value of the coordinates of the vertices-the coordinates of the vertices after installation |), a wafer automatic appearance inspection device (shen Condor 203 (manufactured by Camtek) measured the four vertices of all the crystal grains, and evaluated the sum of the moving distances of the vertices of each crystal grain by the following criteria. In addition, the coordinates of the vertices of the design value are the same as the coordinates of the vertices before crimping, and the coordinates of the vertices after mounting refer to the coordinates of the vertices after crimping.

A:小於30μm A: less than 30 μm

B:30μm以上且小於50μm B: 30 μm or more and less than 50 μm

C:50μm以上且小於100μm C: 50 μm or more and less than 100 μm

D:100μm以上 D: 100 μm or more

於所述積層體的設置有晶粒的表面上,進而使用壓縮成型成型機(WCM-300,山田尖端科技(APIC YAMADA)(股)製造),於表3所記載的溫度(T2)條件下,以80×105Pa的壓力對作為成型樹脂組成物的半導體密封用環氧樹脂成形材料(蘇米康(sumikon)EME-G770H、住友貝克萊特(Sumitomo Bakelite)(股)製造)進行90秒壓縮成型。其後進而以175℃加熱6小時。 On the surface of the laminated body on which the crystal grains are provided, a compression molding machine (WCM-300, manufactured by APIC YAMADA) was used under the temperature (T2) conditions described in Table 3. For 80 seconds at a pressure of 80 × 10 5 Pa for an epoxy resin molding material for semiconductor sealing (Sumikon EME-G770H, manufactured by Sumitomo Bakelite Co., Ltd.) as a molding resin composition. Compression molding. Then, it heated at 175 degreeC for 6 hours.

再者,實施例10中使用CEL-9200 HF10(日立化成(股)製造)作為成型樹脂組成物,實施例11中使用KE-300TS-1(京瓷化學(Kyocera Chemical)(股))作為成型樹脂組成物,除此以外,與實施例1同樣地進行成型。 In addition, in Example 10, CEL-9200 HF10 (manufactured by Hitachi Chemical Co., Ltd.) was used as the molding resin composition, and in Example 11, KE-300TS-1 (Kyocera Chemical (Stock)) was used as the molding resin. A composition was molded in the same manner as in Example 1 except that the composition was molded.

關於所獲得的積層體,如下所述般對翹曲進行評價。 About the obtained laminated body, the curvature was evaluated as follows.

<評價2:翹曲> <Evaluation 2: Warpage>

將膜厚感測器(基恩士(KEYENCE)(股)製造、ST-T80)固定於X-Y平台而對所述積層體中的翹曲進行測定。於測定中,規定X方向(基板面方向)及Y方向(基板面方向中與X方向正交的方向),X方向中每隔0.1mm進行測定,Y方向中每隔1mm進行測定。 A film thickness sensor (manufactured by Keyence Corporation, ST-T80) was fixed to the X-Y stage, and the warpage in the laminate was measured. In the measurement, the X direction (substrate surface direction) and the Y direction (direction orthogonal to the X direction in the substrate surface direction) were specified, and the measurement was performed every 0.1 mm in the X direction and the measurement was performed every 1 mm in the Y direction.

將翹曲定義為所有測定點的最大值與最小值的差,並藉由以下的基準進行評價。 Warpage was defined as the difference between the maximum value and the minimum value at all measurement points, and was evaluated by the following criteria.

A:小於250μm A: less than 250 μm

B:250μm以上且小於500μm B: 250 μm or more and less than 500 μm

C:500μm以上且小於750μm C: 500 μm or more and less than 750 μm

D:1000μm以上 D: 1000μm or more

<評價3:剝離性> <Evaluation 3: Peelability>

將所述所獲得的積層體的成型層設為下側,使用切割膠帶安裝機將下側的矽晶圓與切割框架一起固定於切割膠帶中央。其後,利用晶圓接合裝置(東京電子(Tokyo Electron)製造、賽奈普斯(Synapse)Z)於25℃下,將上側的矽晶圓向相對於下側的成型層為垂直的方向以50mm/min的速度拉起而將上側的矽晶圓剝離。其次,於25℃下,將積層於成型樹脂面上的暫時接著劑層向垂直方向以50mm/min的速度拉起,藉由以下的基準對此時的剝離力進行評價。再者,剝離力的測定是使用測力計(依夢達(Imada)製造,ZTS-100N)來進行。 The molding layer of the obtained laminated body was set to the lower side, and the lower silicon wafer and the dicing frame were fixed to the center of the dicing tape using a dicing tape mounting machine. Thereafter, the wafer bonding device (manufactured by Tokyo Electron, Synapse Z) was used to position the upper silicon wafer in a direction perpendicular to the lower molding layer at 25 ° C. It was pulled up at a speed of 50 mm / min to peel off the upper silicon wafer. Next, the temporary adhesive layer laminated on the molding resin surface was pulled up at a speed of 50 mm / min in a vertical direction at 25 ° C., and the peel force at this time was evaluated by the following criteria. The measurement of the peeling force was performed using a dynamometer (ZTS-100N manufactured by Imada).

A:能夠以小於30N剝離 A: Peelable at less than 30N

B:能夠以30N以上且小於50N剝離 B: Peelable at 30N or more and less than 50N

C:能夠以50N以上剝離 C: Peelable at 50N or more

D:無法剝離 D: Unable to peel

Claims (7)

一種半導體元件的製造方法,將在載體基板上具有暫時接著劑層的部件與在至少一個面具有電路的晶粒以所述暫時接著劑層與晶粒相接的方式於溫度T1下壓接,並在所述晶粒的與暫時接著劑層相接之側的相反側的表面於溫度T2下形成成型層,然後將所述載體基板於40℃以下的溫度下剝離;此處,溫度T1為於測定頻率10 Hz下測定的所述暫時接著劑層的熔融黏度成為4000 Pa·s以上且10000 Pa·s以下的溫度,溫度T2為於測定頻率10 Hz下測定的所述暫時接著劑層的熔融黏度成為4000 Pa·s以上的溫度。A method for manufacturing a semiconductor element, comprising: crimping a component having a temporary adhesive layer on a carrier substrate and a crystal grain having a circuit on at least one side in a manner that the temporary adhesive layer is in contact with the crystal grain at a temperature T1, And forming a forming layer at a temperature T2 on the surface of the crystal grain on the side opposite to the side where the temporary adhesive layer is in contact, and then peeling the carrier substrate at a temperature of 40 ° C or lower; here, the temperature T1 is The melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz becomes a temperature of 4000 Pa · s or more and 10,000 Pa · s or less, and the temperature T2 is the temperature of the temporary adhesive layer measured at a measurement frequency of 10 Hz. The melt viscosity is a temperature of 4000 Pa · s or more. 如申請專利範圍第1項所述的半導體元件的製造方法,其中於所述成型層形成後進行100℃以上的熱處理。The method for manufacturing a semiconductor device according to item 1 of the scope of patent application, wherein a heat treatment at 100 ° C. or higher is performed after the forming layer is formed. 如申請專利範圍第1項或第2項所述的半導體元件的製造方法,其中於將所述載體基板於40℃以下的溫度下剝離後,進而將所述暫時接著劑層於40℃以下去除。The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein after the carrier substrate is peeled off at a temperature of 40 ° C or lower, the temporary adhesive layer is further removed at 40 ° C or lower. . 如申請專利範圍第1項或第2項所述的半導體元件的製造方法,其中所述暫時接著劑層包含選自具有苯乙烯結構的熱塑性彈性體、環烯烴系聚合物及丙烯酸樹脂中的至少一種。The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the temporary adhesive layer includes at least one selected from a thermoplastic elastomer having a styrene structure, a cycloolefin-based polymer, and an acrylic resin. One. 如申請專利範圍第1項或第2項所述的半導體元件的製造方法,其中所述成型層包含環氧樹脂。The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the molding layer includes an epoxy resin. 如申請專利範圍第1項或第2項所述的半導體元件的製造方法,其中所述晶粒的溫度T1下的壓接前的位置與所述晶粒的溫度T1下的壓接後的位置的移動距離小於100 μm。The method for manufacturing a semiconductor device according to item 1 or 2 of the scope of patent application, wherein the position before the crimping at the temperature T1 of the crystal grains and the position after the crimping at the temperature T1 of the crystal grains The moving distance is less than 100 μm. 如申請專利範圍第1項或第2項所述的半導體元件的製造方法,其中所述暫時接著劑層含有氟原子及矽原子中的至少一者。The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein the temporary adhesive layer contains at least one of a fluorine atom and a silicon atom.
TW105127758A 2015-09-30 2016-08-30 Semiconductor component manufacturing method TWI671831B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-195159 2015-09-30
JP2015195159 2015-09-30

Publications (2)

Publication Number Publication Date
TW201724294A TW201724294A (en) 2017-07-01
TWI671831B true TWI671831B (en) 2019-09-11

Family

ID=58423883

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105127758A TWI671831B (en) 2015-09-30 2016-08-30 Semiconductor component manufacturing method

Country Status (3)

Country Link
JP (1) JP6490825B2 (en)
TW (1) TWI671831B (en)
WO (1) WO2017057355A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019181716A1 (en) * 2018-03-20 2019-09-26 富士フイルム株式会社 Temporary adhesive composition-containing container filled with temporary adhesive composition, method for filling and storing said composition, and method for manufacturing said container
JPWO2020255904A1 (en) * 2019-06-20 2020-12-24
JP7447493B2 (en) 2020-01-07 2024-03-12 株式会社レゾナック Resin composition for temporary fixing, resin film, and method for manufacturing semiconductor device
CN113497174B (en) * 2020-03-20 2023-05-23 东莞市中麒光电技术有限公司 Small-spacing LED display screen module and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6118183A (en) * 1996-12-19 2000-09-12 Texas Instruments Incorporated Semiconductor device, manufacturing method thereof, and insulating substrate for same
US20090075429A1 (en) * 2005-04-27 2009-03-19 Lintec Corporation Sheet-Like Underfill Material and Semiconductor Device Manufacturing Method
US20110057332A1 (en) * 2009-09-07 2011-03-10 Renesas Electronics Corporation Semiconductor chip with conductive adhesive layer and method of manufacturing the same, and method of manufacturing semiconductor device
US20130078770A1 (en) * 2011-09-28 2013-03-28 Nitto Denko Corporation Method for producing semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069919A (en) * 2010-08-25 2012-04-05 Toshiba Corp Manufacturing method of semiconductor device
JP2012129326A (en) * 2010-12-14 2012-07-05 Sumitomo Bakelite Co Ltd Electronic device manufacturing method and electronic device package manufacturing method
JP6140441B2 (en) * 2012-12-27 2017-05-31 富士フイルム株式会社 Temporary adhesive for manufacturing semiconductor device, adhesive support using the same, and method for manufacturing semiconductor device
JP6188495B2 (en) * 2013-08-30 2017-08-30 富士フイルム株式会社 Laminate and its application

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6118183A (en) * 1996-12-19 2000-09-12 Texas Instruments Incorporated Semiconductor device, manufacturing method thereof, and insulating substrate for same
US20090075429A1 (en) * 2005-04-27 2009-03-19 Lintec Corporation Sheet-Like Underfill Material and Semiconductor Device Manufacturing Method
US20110057332A1 (en) * 2009-09-07 2011-03-10 Renesas Electronics Corporation Semiconductor chip with conductive adhesive layer and method of manufacturing the same, and method of manufacturing semiconductor device
US20130078770A1 (en) * 2011-09-28 2013-03-28 Nitto Denko Corporation Method for producing semiconductor device
US20130288428A1 (en) * 2011-09-28 2013-10-31 Nitto Denko Corporation Method for producing semiconductor device

Also Published As

Publication number Publication date
JP6490825B2 (en) 2019-03-27
WO2017057355A1 (en) 2017-04-06
JPWO2017057355A1 (en) 2018-06-14
TW201724294A (en) 2017-07-01

Similar Documents

Publication Publication Date Title
TWI663232B (en) Wafer processing body, temporary bonding material for wafer processing, and manufacturing method of thin wafer
TWI797062B (en) Adhesive material for wafer processing, wafer laminate and manufacturing method of thin wafer
TWI671831B (en) Semiconductor component manufacturing method
JP6463664B2 (en) Wafer processing body and wafer processing method
KR102355192B1 (en) Wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer
TWI668077B (en) Method for temporarily bonding wafers and method for manufacturing thin wafers
TWI549241B (en) Method for manufacturing wafer sealant and semiconductor device
TWI732764B (en) Temporary adhesive, adhesive film, adhesive support, laminate and adhesive kit
TWI690579B (en) Temporary bonding material for wafer processing, wafer processing body, and thin wafer manufacturing method
TW201527430A (en) Resin composition for semiconductor and resin film for semiconductor, and semiconductor apparatus using the same
TWI779045B (en) Temporary bonding film roll for substrate processing, manufacturing method of thin substrate
JP6528747B2 (en) Temporary bonding material for wafer processing, wafer processing body, and method for manufacturing thin wafer
TWI701149B (en) Manufacturing method of laminated body, manufacturing method of semiconductor element
JP6891427B2 (en) Resin sheet
TWI692517B (en) Temporary adhesive, laminate, method for manufacturing laminate, method for manufacturing element substrate, and method for manufacturing semiconductor element
TWI682428B (en) Laminate

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees