TW201724294A - Method for producing semiconductor element and method for producing laminate - Google Patents
Method for producing semiconductor element and method for producing laminate Download PDFInfo
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- TW201724294A TW201724294A TW105127758A TW105127758A TW201724294A TW 201724294 A TW201724294 A TW 201724294A TW 105127758 A TW105127758 A TW 105127758A TW 105127758 A TW105127758 A TW 105127758A TW 201724294 A TW201724294 A TW 201724294A
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- temporary adhesive
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
本發明是有關於一種半導體元件的製造方法及積層體的製造方法。The present invention relates to a method of manufacturing a semiconductor device and a method of manufacturing a laminate.
半導體元件有時會於在表面具有電路的晶粒上形成成型層而加以封裝化來使用。作為此種經封裝化的半導體元件的製造方法之一,已知有如下方法:於載體基板上形成暫時接著劑層並將晶粒排列於所形成的暫時接著劑層上,進而於所述暫時接著劑層上形成成型層,將載體基板剝離(例如專利文獻1~專利文獻4)。 [現有技術文獻] [專利文獻]The semiconductor element may be formed by forming a molding layer on a crystal grain having a circuit on the surface and encapsulating it. As one of the methods for producing such an encapsulated semiconductor device, there is known a method of forming a temporary adhesive layer on a carrier substrate and arranging crystal grains on the formed temporary adhesive layer, and further A molding layer is formed on the subsequent layer, and the carrier substrate is peeled off (for example, Patent Documents 1 to 4). [Prior Art Document] [Patent Literature]
[專利文獻1]美國專利第7202107號說明書 [專利文獻2]美國專利第9082806號說明書 [專利文獻3]日本專利特開2013-168417號公報 [專利文獻4]日本專利特開2001-308116號公報[Patent Document 1] US Pat. No. 7,202,107 [Patent Document 2] US Patent No. 9082806 [Patent Document 3] Japanese Patent Laid-Open Publication No. Hei.
[發明所欲解決之課題] 然而已得知,若如所述專利文獻所記載般將晶粒排列於暫時接著劑層的表面進而於所述暫時接著劑層的表面形成成型層,則將晶粒壓接於暫時接著劑層時的晶粒移位成為問題,或暫時接著劑層與成型層的剝離性存在問題。 本發明是為了解決所述課題而成者,且其目的在於提供一種有效地抑制晶粒移位且暫時接著劑層與成型層的剝離性優異的半導體元件的製造方法及積層體的製造方法。 [解決課題之手段][Problems to be Solved by the Invention] However, it has been found that, as described in the above-mentioned patent documents, crystal grains are arranged on the surface of the temporary adhesive layer and a molding layer is formed on the surface of the temporary adhesive layer. The grain displacement when the particles are pressure-bonded to the temporary adhesive layer becomes a problem, or there is a problem in the peelability of the temporary adhesive layer and the formed layer. The present invention has been made to solve the above problems, and an object of the invention is to provide a method for producing a semiconductor device and a method for producing a laminate, which are excellent in suppressing grain displacement and having excellent release property between a temporary adhesive layer and a molding layer. [Means for solving the problem]
基於所述狀況,本發明者等人進行了研究,結果得知晶粒移位或剝離性問題的原因在於:因晶粒的壓接時或成型層的形成時的加熱而導致暫時接著劑層熔融。並且發現,藉由使晶粒的壓接時或成型層的成形時的暫時接著劑層的熔融黏度變高可解決所述課題。具體而言,藉由下述段<1>,較佳為藉由<2>~<7>來解決所述課題。 <1>一種半導體元件的製造方法,其中將在載體基板上具有暫時接著劑層的部件與在至少一個面具有電路的晶粒以所述暫時接著劑層與晶粒相接的方式於溫度T1下壓接,並在所述晶粒的與暫時接著劑層相接之側的相反側的表面於溫度T2下形成成型層,然後將所述載體基板於40℃以下的溫度下剝離;此處,溫度T1為於測定頻率10 Hz下測定的所述暫時接著劑層的熔融黏度成為4000 Pa·s以上且10000 Pa·s以下的溫度,溫度T2為於測定頻率10 Hz下測定的所述暫時接著劑層的熔融黏度成為4000 Pa·s以上的溫度。 <2> 如<1>所述的半導體元件的製造方法,其中於所述成型層形成後進行100℃以上的熱處理。 <3> 如<1>或<2>所述的半導體元件的製造方法,其中於將所述載體基板於40℃以下的溫度下剝離後,進而將所述暫時接著劑層於40℃以下去除。 <4> 如<1>~<3>中任一項所述的半導體元件的製造方法,其中所述暫時接著劑層包含選自具有苯乙烯結構的熱塑性彈性體、環烯烴系聚合物及丙烯酸樹脂中的至少一種。 <5> 如<1>~<4>中任一項所述的半導體元件的製造方法,其中所述成型層包含環氧樹脂。 <6> 如<1>~<5>中任一項所述的半導體元件的製造方法,其中所述晶粒的溫度T1下的壓接前的位置與所述晶粒的溫度T1下的壓接後的位置的移動距離小於100 μm。 <7> 如<1>~<6>中任一項所述的半導體元件的製造方法,其中所述暫時接著劑層含有氟原子及矽原子中的至少一者。 [發明的效果]Based on the above, the inventors of the present invention conducted research, and as a result, it was found that the cause of the grain displacement or the peeling property is that the temporary adhesive layer is caused by the pressure bonding of the crystal grains or the heating at the time of forming the molding layer. Melt. Further, it has been found that the problem can be solved by increasing the melt viscosity of the temporary adhesive layer during the pressure bonding of the crystal grains or during the molding of the molding layer. Specifically, the above problem is solved by <2> to <7> by the following paragraph <1>. <1> A method of manufacturing a semiconductor device, wherein a member having a temporary adhesive layer on a carrier substrate and a die having a circuit on at least one surface are connected to the die by the temporary adhesive layer at a temperature T1 Pressing down, and forming a molding layer at a temperature T2 on the surface on the opposite side of the side of the crystal grain that is in contact with the temporary adhesive layer, and then peeling the carrier substrate at a temperature below 40 ° C; The temperature T1 is a temperature at which the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz is 4000 Pa·s or more and 10000 Pa·s or less, and the temperature T2 is the temporary measured at a measurement frequency of 10 Hz. The melt viscosity of the subsequent layer becomes a temperature of 4,000 Pa·s or more. <2> The method for producing a semiconductor device according to <1>, wherein the heat treatment at 100 ° C or higher is performed after the formation of the formed layer. The method for producing a semiconductor device according to the above aspect, wherein after the carrier substrate is peeled off at a temperature of 40 ° C or lower, the temporary adhesive layer is further removed at 40 ° C or lower. . The method for producing a semiconductor device according to any one of the above aspects, wherein the temporary adhesive layer comprises a thermoplastic elastomer having a styrene structure, a cycloolefin polymer, and acrylic acid. At least one of the resins. The method for producing a semiconductor device according to any one of the above aspects, wherein the molding layer comprises an epoxy resin. The method of manufacturing a semiconductor device according to any one of <1> to <5> wherein the position before the pressure bonding at the temperature T1 of the crystal grain and the pressure at the temperature T1 of the crystal grain The moving distance of the connected position is less than 100 μm. The method for producing a semiconductor device according to any one of the above aspects, wherein the temporary adhesive layer contains at least one of a fluorine atom and a germanium atom. [Effects of the Invention]
根據本發明,可提供一種有效地抑制晶粒移位且暫時接著劑層與成型層的剝離性優異的半導體元件的製造方法及積層體的製造方法及積層體的製造方法。According to the present invention, it is possible to provide a method for producing a semiconductor device, a method for producing a laminate, and a method for producing a laminate, which are excellent in suppressing grain displacement and having excellent release property between a temporary adhesive layer and a molding layer.
以下,對本發明的內容進行詳細說明。再者,於本說明書中,所謂「~」,是以包含其前後所記載的數值作為下限值及上限值的意義來使用。 於本說明書中的基(原子團)的表述中,未記載經取代及未經取代的表述包含不具有取代基的基(原子團),並且亦包含具有取代基的基(原子團)。例如,所謂「烷基」,不僅包含不具有取代基的烷基(未經取代的烷基),亦包含具有取代基的烷基(經取代的烷基)。 於本說明書中,「(甲基)丙烯酸酯」表示丙烯酸酯及甲基丙烯酸酯,「(甲基)丙烯酸」表示丙烯酸及甲基丙烯酸,「(甲基)丙烯醯基」表示「丙烯醯基」及「甲基丙烯醯基」。 於本說明書中,重量平均分子量及數量平均分子量定義為利用凝膠滲透層析法(Gel Permeation Chromatography,GPC)測定的聚苯乙烯換算值。於本說明書中,重量平均分子量(Mw)及數量平均分子量(Mn)例如可藉由使用HLC-8220(東曹(Tosoh)(股)製造),使用TSKgel Super AWM-H(東曹(Tosoh)(股)製造,6.0 mm(內徑)×15.0 cm)作為管柱,且使用10 mmol/L溴化鋰的N-甲基吡咯啶酮(N-methyl pyrrolidinone,NMP)溶液作為洗滌液而求出。 只要無特別敘述,則本發明中的厚度等設為意指平均厚度者。Hereinafter, the contents of the present invention will be described in detail. In the present specification, the term "~" is used in the sense that the numerical values described before and after are included as the lower limit and the upper limit. In the expression of the group (atomic group) in the present specification, the substituted and unsubstituted expressions are not described as including a group having no substituent (atomic group), and also a group having a substituent (atomic group). For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). In the present specification, "(meth)acrylate" means acrylate and methacrylate, "(meth)acrylic" means acrylic acid and methacrylic acid, and "(meth)acryloyl group" means "acryloyl fluorenyl group". And "methacryl oxime". In the present specification, the weight average molecular weight and the number average molecular weight are defined as polystyrene-converted values measured by Gel Permeation Chromatography (GPC). In the present specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) can be, for example, by using HLC-8220 (manufactured by Tosoh), using TSKgel Super AWM-H (Tosoh) (manufactured by Ltd.), 6.0 mm (inner diameter) × 15.0 cm) was used as a column, and a solution of N-methyl pyrrolidinone (NMP) of 10 mmol/L of lithium bromide was used as a washing liquid. The thickness or the like in the present invention is assumed to mean the average thickness unless otherwise specified.
本發明的半導體元件的製造方法的特徵在於:將在載體基板上具有暫時接著劑層的部件與在至少一個面具有電路的晶粒以所述暫時接著劑層與晶粒相接的方式於溫度T1下壓接,並在所述晶粒的與暫時接著劑層相接之側的相反側的表面於溫度T2下形成成型層,然後將所述載體基板於40℃以下的溫度下剝離。 此處,溫度T1為於測定頻率10 Hz下測定的所述暫時接著劑層的熔融黏度成為4000 Pa·s以上且10000 Pa·s以下的溫度,溫度T2為於測定頻率10 Hz下測定的所述暫時接著劑層的熔融黏度成為4000 Pa·s以上的溫度。此種積層體可設置較晶片尺寸大的再配線(再分配層(RDL:Redistribution layer))區域,因此可較佳地用於以無基板化、低背化為特徵的扇出式晶圓級封裝(Fan-out Wafer Level Package,FOWLP)中。 藉由設為此種構成,可提供一種剝離性優異的半導體元件或積層體的製造方法。即,自先前以來是於暫時接著劑層的表面形成成型層來進行製造半導體元件等的積層體,但已得知先前的製造方法中存在暫時接著劑層與成型層的剝離性劣化的情況。本發明者對其理由進行了研究,結果得知如下問題:於設置暫時接著劑層後形成成型層,但因該成型層的形成時的加熱而導致暫時接著劑層熔融,且導致構成成型層的樹脂與構成暫時接著劑層的樹脂於表層混雜。因此,本發明中,藉由將成型層形成時的暫時接著劑層的熔融黏度設為4000 Pa·s以上而避免了該點。 進而已得知,於暫時接著劑層與成型層之間設置具有電路的晶粒,但於將晶粒排列壓接於暫時接著劑層的表面的情況下,存在因將晶粒壓接於暫時接著劑層時的加熱而導致暫時接著劑層熔融且晶粒發生移位的情況。本發明中,藉由將在載體基板上具有暫時接著劑層的部件與在至少一個面具有電路的晶粒以暫時接著劑層與晶粒相接的方式於溫度T1下壓接,可有效地抑制晶粒移位。 藉由抑制晶粒移位,晶粒彼此的間距不易產生偏差,可高精度地製造半導體元件。 再者,於成型層形成時亦會施加大的壓力,但對晶粒及不具有晶粒的部分的暫時接著劑層均勻地施加壓力,因此推測幾乎不存在成型層形成時的晶粒移位所造成的影響。 以下,以本發明的半導體元件的製造方法為例進行說明,但關於本發明的積層體的製造方法亦同樣如此。A method of manufacturing a semiconductor device according to the present invention is characterized in that a member having a temporary adhesive layer on a carrier substrate and a die having a circuit on at least one surface are in contact with the die by the temporary adhesive layer The metal layer is crimped under T1, and a molding layer is formed on the surface on the opposite side to the side where the temporary adhesive layer is in contact with the temporary adhesive layer, and then the carrier substrate is peeled off at a temperature of 40 ° C or lower. Here, the temperature T1 is a temperature at which the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz is 4000 Pa·s or more and 10000 Pa·s or less, and the temperature T2 is measured at a measurement frequency of 10 Hz. The melt viscosity of the temporary adhesive layer is 4,000 kPa or more. Such a laminate can be provided with a rewiring (redistribution layer) region having a larger wafer size, and thus can be preferably used for a fan-out wafer level characterized by no substrate formation and low profile. In the package (Fan-out Wafer Level Package, FOWLP). With such a configuration, it is possible to provide a semiconductor element or a method for producing a laminate which is excellent in releasability. In other words, a laminate in which a semiconductor element or the like is formed on the surface of the temporary adhesive layer has been used. However, it has been known that the peelability of the temporary adhesive layer and the molded layer is deteriorated in the conventional production method. The inventors of the present invention have studied the reason why the molding layer is formed after the provision of the temporary adhesive layer, but the temporary adhesive layer is melted by the heating at the time of formation of the molding layer, and the molding layer is formed. The resin is mixed with the resin constituting the temporary adhesive layer on the surface layer. Therefore, in the present invention, this point is avoided by setting the melt viscosity of the temporary adhesive layer when the molded layer is formed to 4000 Pa·s or more. Further, it has been found that a crystal grain having a circuit is provided between the temporary adhesive layer and the molding layer, but in the case where the crystal grain array is pressure-bonded to the surface of the temporary adhesive layer, there is a case where the crystal grain is crimped to the temporary surface. The subsequent heating of the agent layer causes a situation in which the temporary adhesive layer is melted and the crystal grains are displaced. In the present invention, the member having the temporary adhesive layer on the carrier substrate and the die having the circuit on at least one surface are bonded to the die at a temperature T1 in such a manner that the temporary adhesive layer is in contact with the die. Suppress grain shift. By suppressing the grain displacement, the pitch of the crystal grains is less likely to vary, and the semiconductor element can be manufactured with high precision. Further, when a molding layer is formed, a large pressure is applied, but pressure is uniformly applied to the crystal grains and the temporary adhesive layer of the portion having no crystal grains, so that it is presumed that there is almost no grain shift at the time of formation of the molding layer. The impact. Hereinafter, the method for producing a semiconductor device of the present invention will be described as an example, but the same applies to the method for producing a layered body of the present invention.
關於本發明的半導體元件的製造方法,使用圖1的(A1)~圖1的(A5)進行說明。首先,如圖1的(A1)所示,於載體基板10上設置暫時接著劑層20。The method of manufacturing the semiconductor device of the present invention will be described using (A1) to (A5) of FIG. 1 . First, as shown in (A1) of FIG. 1, a temporary adhesive layer 20 is provided on the carrier substrate 10.
載體基板10並無特別限定,例如可列舉:矽基板、玻璃基板、金屬基板、化合物半導體基板等。其中,較佳為矽基板。載體基板的厚度並無特別限定,例如較佳為300 μm~100 mm,更佳為300 μm~10 mm。The carrier substrate 10 is not particularly limited, and examples thereof include a ruthenium substrate, a glass substrate, a metal substrate, and a compound semiconductor substrate. Among them, a tantalum substrate is preferred. The thickness of the carrier substrate is not particularly limited, and is, for example, preferably 300 μm to 100 mm, and more preferably 300 μm to 10 mm.
暫時接著劑層20可使用後述的暫時接著劑組成物而形成。作為暫時接著劑組成物的應用方法,可列舉:旋轉塗佈法、噴霧法、輥塗佈法、流塗法、刮刀塗佈法、網版印刷法、浸漬塗佈法等。另外,亦可為利用壓力將暫時接著劑組成物自狹縫狀的開口擠出,從而將暫時接著劑組成物塗佈於載體基板10上的方法。再者,圖的(A1)~圖1的(A5)中,於載體基板10的一個面的整面形成暫時接著劑層20,但亦可不於載體基板10的整面形成暫時接著劑層20。 另外,亦可預先將暫時接著劑組成物膜化,並藉由層壓而於載體基板10上對該膜進行製膜。 另外,暫時接著劑層可僅為一層,亦可為兩層以上。例如,本發明中的積層體可為包括載體基材/第1暫時接著劑層/第2暫時接著劑層/晶粒成型層的構成。The temporary adhesive layer 20 can be formed using a temporary adhesive composition which will be described later. Examples of the application method of the temporary adhesive composition include a spin coating method, a spray method, a roll coating method, a flow coating method, a knife coating method, a screen printing method, and a dip coating method. Further, a method in which the temporary adhesive composition is applied from the slit-shaped opening by pressure to apply the temporary adhesive composition onto the carrier substrate 10 may be employed. In the case of (A1) to (A5) of FIG. 1, the temporary adhesive layer 20 is formed on the entire surface of one surface of the carrier substrate 10, but the temporary adhesive layer 20 may not be formed on the entire surface of the carrier substrate 10. . Alternatively, the temporary adhesive composition may be film-formed in advance, and the film may be formed on the carrier substrate 10 by lamination. Further, the temporary adhesive layer may be only one layer or two or more layers. For example, the laminate in the present invention may have a structure including a carrier substrate/first temporary adhesive layer/second temporary adhesive layer/die formation layer.
暫時接著劑組成物的應用量例如較佳為乾燥後的暫時接著劑層的平均膜厚成為0.1 μm~1000 μm的應用量。下限較佳為1.0 μm以上,更佳為10.0 μm以上。上限較佳為300 μm以下,更佳為200 μm以下。The application amount of the temporary adhesive composition is preferably, for example, an application amount of the average thickness of the temporary adhesive layer after drying of from 0.1 μm to 1000 μm. The lower limit is preferably 1.0 μm or more, and more preferably 10.0 μm or more. The upper limit is preferably 300 μm or less, more preferably 200 μm or less.
較佳為於應用暫時接著劑組成物後進行乾燥。乾燥條件例如較佳為於50℃~250℃下進行10秒~1000秒。乾燥溫度更佳為90℃~220℃,進而更佳為100℃~200℃。乾燥時間更佳為20秒~600秒,進而更佳為30秒~300秒。乾燥可分為兩階段而階段性地提高溫度來實施。It is preferred to dry after applying the temporary adhesive composition. The drying conditions are, for example, preferably carried out at 50 ° C to 250 ° C for 10 seconds to 1000 seconds. The drying temperature is more preferably from 90 ° C to 220 ° C, and still more preferably from 100 ° C to 200 ° C. The drying time is more preferably from 20 seconds to 600 seconds, and still more preferably from 30 seconds to 300 seconds. Drying can be carried out in two stages and the temperature is increased stepwise.
於所述實施形態中,在載體基板上具有暫時接著劑層的部件中亦可於不脫離本發明的主旨的範圍內具有其他層。作為其他層,可例示被稱為脫模層、剝離層、分離層的層。作為剝離層,例如可參考日本專利特開2014-212292號公報的段落0025~段落0055的記載,該些內容被併入至本說明書中。另外,作為分離層,可參考WO2013-065417號手冊的段落0069~段落0124的記載,該些內容被併入至本說明書中。 然而,本發明中較佳為在載體基板的表面具有暫時接著劑層。In the above-described embodiment, the member having the temporary adhesive layer on the carrier substrate may have other layers within the range not departing from the gist of the invention. As another layer, a layer called a release layer, a peeling layer, and a separation layer can be illustrated. As the peeling layer, for example, the description of paragraph 0025 to paragraph 0055 of Japanese Patent Laid-Open No. 2014-212292 is incorporated herein by reference. Further, as the separation layer, reference is made to the description of paragraph 0069 to paragraph 0124 of the manual of WO2013-065417, which is incorporated in the specification. However, in the present invention, it is preferred to have a temporary adhesive layer on the surface of the carrier substrate.
其次,如圖1的(A2)所示,於暫時接著劑層20上壓接配置晶粒30。 晶粒30為在至少一個表面具有電路者,較佳為僅在一個表面具有電路者。作為晶粒,例如可列舉包含矽、藍寶石、碳化矽(SiC)、砷化鎵(GaAs)、磷化鎵(GaP)、氮化鎵(GaN)等的晶圓晶片。Next, as shown in (A2) of FIG. 1, the die 30 is pressure-bonded to the temporary adhesive layer 20. The die 30 is a circuit having at least one surface, preferably a circuit having only one surface. Examples of the crystal grains include wafer wafers containing ruthenium, sapphire, tantalum carbide (SiC), gallium arsenide (GaAs), gallium phosphide (GaP), gallium nitride (GaN), and the like.
於本發明中,關於晶粒30的壓接,較佳為於測定頻率10 Hz下測定的暫時接著劑層的熔融黏度成為4000 Pa·s以上且10000 Pa·s以下的溫度T1下進行壓接。溫度T1較佳為暫時接著劑層的熔融黏度成為4300 Pa·s~9800 Pa·s的溫度,更佳為暫時接著劑層的熔融黏度成為4500 Pa·s~9700 Pa·s的溫度。 溫度T1的溫度並無特別規定,可設為100℃~300℃(下限較佳為130℃以上,更佳為160℃以上,上限較佳為260℃以下,更佳為240℃以下,進而更佳為180℃以下)的範圍。In the present invention, it is preferable that the pressure bonding of the crystal grains 30 is performed at a temperature T1 at a temperature T1 of 4,000 Pa·s or less and a melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz. . The temperature T1 is preferably such that the melt viscosity of the temporary adhesive layer is 4300 Pa·s to 9800 Pa·s, and more preferably the melt viscosity of the temporary adhesive layer is 4500 Pa·s to 9700 Pa·s. The temperature of the temperature T1 is not particularly limited, and may be 100 to 300 ° C (the lower limit is preferably 130 ° C or higher, more preferably 160 ° C or higher, and the upper limit is preferably 260 ° C or lower, more preferably 240 ° C or lower, and further Good range of 180 ° C or less).
壓接較佳為於對晶粒30施加的壓力成為0.001 MPa~10 MPa的條件下進行,更佳為0.01 MPa~5 MPa。壓接時間較佳為0.1秒~15秒,更佳為0.5秒~10秒。The pressure bonding is preferably carried out under the conditions that the pressure applied to the crystal grains 30 is from 0.001 MPa to 10 MPa, more preferably from 0.01 MPa to 5 MPa. The crimping time is preferably from 0.1 second to 15 seconds, more preferably from 0.5 second to 10 seconds.
其次,如圖1的(A3)所示,於晶粒30的與暫時接著劑20相接之側的相反側的表面,於溫度T2下形成成型層。如圖1所示,成型層設置於晶粒上以及暫時接著劑層的表面。成型層較佳為以將晶粒密封的方式進行覆蓋,但未完全覆蓋的情況當然亦包含於本發明的範圍中。另外,成型層並非必須為完整的層狀,例如以覆蓋晶粒的方式設置於暫時接著劑層的表面的態樣亦包含於本發明的範圍中。 關於成型層形成時的溫度T2,是於測定頻率10 Hz下測定的暫時接著劑層的熔融黏度成為4000 Pa·s以上的溫度下進行。溫度T2若為暫時接著劑層的熔融黏度成為4000 Pa·s以上的溫度,則熔融黏度的上限並無特別規定,較佳為暫時接著劑層的熔融黏度成為4300 Pa·s~15000 Pa·s的溫度,更佳為暫時接著劑層的熔融黏度成為4500 Pa·s~12000 Pa·s的溫度。 溫度T2並無特別規定,較佳為20℃~300℃(較佳為100℃~260℃,更佳為130℃~260℃,進而更佳為160℃~240℃)。 另外,本發明中較佳為溫度T1下的暫時接著劑層的熔融黏度高於溫度T2下的暫時接著劑層的溶融黏度,且較佳為溫度T1下的暫時接著劑層的熔融黏度較溫度T2下的暫時接著劑層的溶融黏度高30 Pa·s以上。 藉由設為此種範圍,更不易引起晶粒移位而較佳。進而更佳為,溫度T1下的暫時接著劑層的熔融黏度較佳為較溫度T2下的暫時接著劑層的溶融黏度高30 Pa·s~600 Pa·s。Next, as shown in (A3) of FIG. 1, a molding layer is formed at a temperature T2 on the surface on the side opposite to the side where the temporary adhesive 20 is in contact with the temporary bonding agent 20. As shown in Figure 1, the shaped layer is disposed on the die and on the surface of the temporary adhesive layer. The shaped layer is preferably covered in such a manner as to seal the crystal grains, but it is of course also included in the scope of the present invention. Further, the molded layer does not have to be a complete layer, and for example, a surface which is provided on the surface of the temporary adhesive layer so as to cover the crystal grains is also included in the scope of the present invention. The temperature T2 at the time of forming the molded layer is performed at a temperature at which the melt viscosity of the temporary adhesive layer measured at a measurement frequency of 10 Hz is 4,000 Pa·s or more. When the temperature T2 is a temperature at which the melt viscosity of the temporary adhesive layer is 4,000 Pa·s or more, the upper limit of the melt viscosity is not particularly limited, and it is preferable that the melt viscosity of the temporary adhesive layer is 4300 Pa·s to 15000 Pa·s. The temperature is more preferably such that the melt viscosity of the temporary adhesive layer is from 4,500 Pa·s to 12,000 Pa·s. The temperature T2 is not particularly limited, and is preferably 20 ° C to 300 ° C (preferably 100 ° C to 260 ° C, more preferably 130 ° C to 260 ° C, still more preferably 160 ° C to 240 ° C). Further, in the present invention, it is preferable that the melt adhesiveness of the temporary adhesive layer at the temperature T1 is higher than the melt viscosity of the temporary adhesive layer at the temperature T2, and preferably the melt viscosity of the temporary adhesive layer at the temperature T1 is higher than the temperature. The temporary adhesive layer under T2 has a high melt viscosity of 30 Pa·s or more. By setting it as such a range, it is more difficult to cause a grain shift, and it is preferable. Further preferably, the melt viscosity of the temporary adhesive layer at the temperature T1 is preferably 30 Pa·s to 600 Pa·s higher than the melt viscosity of the temporary adhesive layer at the temperature T2.
晶粒亦稱為晶片,在至少一個面具有電路。晶粒通常於基板的表面設置電路。基板可例示矽基板等。晶粒例如為晶粒的基板的表面積為1 mm2 ~500 mm2 左右的四角形。此處的四角形的主旨為除數學意義上的四角形以外亦包括大體呈四角形的形狀者。另外,四角形通常為長方形。通常藉由對形成於矽晶圓等半導體晶圓上的基板進行切割分離而獲得。The die, also referred to as a wafer, has circuitry on at least one side. The crystal grains are usually provided with circuits on the surface of the substrate. The substrate can be exemplified by a tantalum substrate or the like. The crystal grain is, for example, a square having a surface area of a crystal having a square shape of about 1 mm 2 to 500 mm 2 . The quadrilateral here is intended to include a substantially quadrangular shape in addition to the square in the mathematical sense. In addition, the quadrilateral is usually rectangular. It is usually obtained by cutting and separating a substrate formed on a semiconductor wafer such as a germanium wafer.
作為成型層40並無特別限定。例如較佳為包含樹脂,更佳為包含硬化性樹脂。另外,成型層較佳為包含無機填充材及硬化劑的至少一種,亦可進而包含其他成分。The molding layer 40 is not particularly limited. For example, it is preferable to contain a resin, and it is more preferable to contain a curable resin. Further, the molded layer preferably contains at least one of an inorganic filler and a curing agent, and may further contain other components.
作為硬化性樹脂,例如可列舉:苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂、雙酚A酚醛清漆樹脂等酚醛清漆型酚樹脂,可溶酚醛樹脂(resole)型酚樹脂等酚樹脂,苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等酚醛清漆型環氧樹脂,雙酚A型環氧樹脂、雙酚F型環氧樹脂等雙酚型環氧樹脂,對苯二酚型環氧樹脂、聯苯型環氧樹脂、二苯乙烯型環氧樹脂、三苯酚甲烷型環氧樹脂、烷基改質三苯酚甲烷型環氧樹脂、含三嗪核的環氧樹脂、二環戊二烯改質苯酚型環氧樹脂、萘酚型環氧樹脂、萘型環氧樹脂、具有伸苯基及/或伸聯苯基骨架的苯酚芳烷基型環氧樹脂、具有伸苯基及/或伸聯苯基骨架的萘酚芳烷基型環氧樹脂等芳烷基型環氧樹脂等環氧樹脂,脲(urea)樹脂、三聚氰胺樹脂等具有三嗪環的樹脂,不飽和聚酯樹脂,雙順丁烯二醯亞胺樹脂,聚胺基甲酸酯樹脂,鄰苯二甲酸二烯丙酯樹脂,矽酮樹脂,具有苯并噁嗪環的樹脂,氰酸酯樹脂等,該些可單獨使用,亦可混合使用。再者,此處所謂環氧樹脂是指於一分子內具有兩個以上的環氧基的單體、寡聚物、聚合物全體。該些中較佳為環氧樹脂。藉此可提高電氣特性。進而,即便添加大量的無機填充材,亦可維持可成形的流動性。 尤其,作為較佳的實施形態而例示:使用環氧樹脂作為作為成型層40的主成分的樹脂,且使用苯乙烯系彈性體作為暫時接著劑層20的主成分的樹脂。藉由採用此種組合,可達成積層體的高剝離性而較佳。再者,此處所謂的主成分的樹脂,是指成型層40或暫時接著劑層20中所含的樹脂成分中含量最多的成分,通常為所述樹脂成分的80質量%以上。Examples of the curable resin include a phenol novolak resin, a cresol novolak resin, a novolac type phenol resin such as a bisphenol A novolak resin, a phenol resin such as a resole type phenol resin, and a phenol novolac resin. Type epoxy resin, phenol novolak type epoxy resin and other novolac type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin and other bisphenol type epoxy resin, hydroquinone type ring Oxygen resin, biphenyl type epoxy resin, stilbene type epoxy resin, trisphenol methane type epoxy resin, alkyl modified trisphenol methane type epoxy resin, triazine core containing epoxy resin, dicyclopentylene Diene modified phenol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, phenol aralkyl type epoxy resin having a stretching phenyl group and/or a biphenyl group extending, having a phenyl group and / Epoxy resin such as an aralkyl type epoxy resin such as a naphthol aralkyl type epoxy resin having a biphenyl skeleton, a resin having a triazine ring such as urea (urea) resin or melamine resin, or an unsaturated polyester Resin, bis-xenylenediamine resin, polyamine Ester resin, diallyl phthalate resin, a silicone resin, a ketone, a resin having a benzoxazine ring, cyanate ester resins, those which may be used alone or in admixture. Here, the term "epoxy resin" as used herein means a monomer, an oligomer, and a polymer having two or more epoxy groups in one molecule. Among these, epoxy resins are preferred. This can improve electrical characteristics. Further, even if a large amount of inorganic filler is added, the fluidity which can be formed can be maintained. In particular, as a preferred embodiment, an epoxy resin is used as the resin which is the main component of the molding layer 40, and a styrene-based elastomer is used as the main component of the temporary adhesive layer 20. By using such a combination, it is possible to achieve high peelability of the laminate. In addition, the resin of the main component herein refers to a component having the largest content of the resin component contained in the molding layer 40 or the temporary adhesive layer 20, and is usually 80% by mass or more of the resin component.
樹脂的含量並無特別限定,較佳為成型層整體的3質量%~30質量%,尤其較佳為5質量%~20質量%。若含量為所述下限值以上,則可抑制流動性的降低,使晶粒30的密封更良好。另外,藉由設為所述上限值以下,可有效地抑制焊料耐熱性的降低。樹脂可僅使用一種,亦可使用兩種以上。The content of the resin is not particularly limited, but is preferably from 3% by mass to 30% by mass based on the entire molded layer, and particularly preferably from 5% by mass to 20% by mass. When the content is at least the lower limit value, the decrease in fluidity can be suppressed, and the sealing of the crystal grains 30 can be further improved. Further, by setting it as the upper limit or less, it is possible to effectively suppress a decrease in solder heat resistance. The resin may be used singly or in combination of two or more.
作為硬化劑,例如除二乙三胺(diethylene triamine,DETA)、三乙四胺(triethylene tetramine,TETA)、間二甲苯二胺(meta-xylylene diamine,MXDA)等脂肪族多胺,二胺基二苯基甲烷(diamino diphenyl methane,DDM)、間苯二胺(m-phenylene diamine,MPDA)、二胺基二苯基碸(diamino diphenyl sulfone,DDS)等芳香族多胺以外,可列舉:包含二氰二胺(dicyandiamide,DICY)、有機酸二醯肼等的多胺化合物等胺系硬化劑,酚醛清漆型酚樹脂、苯酚聚合物等酚系硬化劑(具有酚性羥基的硬化劑),六氫鄰苯二甲酸酐(hexahydrophthalic anhydride,HHPA)、甲基四氫鄰苯二甲酸酐(methyl tetrahydrophthalic anhydride,MTHPA)等環狀脂肪酸酐(液狀酸酐)、偏苯三甲酸酐(trimellitic anhydride,TMA)、均苯四甲酸二酐(pyromellitic dianhydride,PMDA)、二苯甲酮四羧酸(benzophenone tetracarboxylic dianhydride,BTDA)等芳香族酸酐等酸酐系硬化劑,聚醯胺樹脂、聚硫醚樹脂。 於使用所述環氧樹脂作為樹脂的情況下,硬化劑並無特別限定,較佳為使用具有酚性羥基的硬化劑。具有酚性羥基的硬化劑與其他硬化劑相比容易控制樹脂的反應,因此可確保製造半導體元件時的良好的流動性。另外,具有酚性羥基的硬化劑由於其反應性控制容易,故亦可實現無機填充材的高填充化。因此,可確保半導體元件的優異的可靠性。此處所謂具有酚性羥基的硬化劑,為於一分子內具有兩個以上的酚性羥基的單體、寡聚物、聚合物全體,並不特別限定其分子量、分子結構。具體而言,可列舉:苯酚酚醛清漆樹脂、甲酚酚醛清漆樹脂等酚醛清漆型酚樹脂,三苯酚甲烷型酚樹脂,萜烯改質酚樹脂、二環戊二烯改質酚樹脂等改質酚樹脂,具有伸苯基及/或伸聯苯基骨架的苯酚芳烷基樹脂、具有伸苯基及/或伸聯苯基骨架的萘酚芳烷基樹脂等芳烷基型酚樹脂,雙酚化合物等,該些可單獨使用,亦可混合使用。As the hardener, for example, an aliphatic polyamine such as diethylene triamine (DETA), triethylene tetramine (TETA), meta-xylylene diamine (MXDA), or a diamine group Other than aromatic polyamines such as diamino diphenyl methane (DDM), m-phenylene diamine (MPDA), and diamino diphenyl sulfone (DDS), An amine-based curing agent such as a polyamine compound such as dicyandiamide (DICY) or an organic acid dioxime; a phenolic curing agent such as a novolac type phenol resin or a phenol polymer (a curing agent having a phenolic hydroxyl group), Heterocyclic fatty acid anhydride (liquid anhydride) such as hexahydrophthalic anhydride (HHPA), methyl tetrahydrophthalic anhydride (MTHPA), trimellitic anhydride (TMA) ), aromatic acid such as pyromellitic dianhydride (PMDA), benzophenone tetracarboxylic dianhydride (BTDA) An acid anhydride hardener such as an anhydride, a polyamide resin or a polysulfide resin. In the case where the epoxy resin is used as the resin, the curing agent is not particularly limited, and a curing agent having a phenolic hydroxyl group is preferably used. The hardener having a phenolic hydroxyl group can easily control the reaction of the resin as compared with other hardeners, and thus can secure good fluidity when manufacturing a semiconductor element. Further, since the curing agent having a phenolic hydroxyl group is easily controlled by the reactivity, it is also possible to achieve high filling of the inorganic filler. Therefore, excellent reliability of the semiconductor element can be ensured. Here, the curing agent having a phenolic hydroxyl group is a monomer, an oligomer, or a polymer having two or more phenolic hydroxyl groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited. Specific examples thereof include a phenol novolak type phenol resin such as a phenol novolak resin and a cresol novolak resin, and a modification of a trisphenol methane type phenol resin, a terpene modified phenol resin, and a dicyclopentadiene modified phenol resin. a phenol resin, a phenol aralkyl resin having a phenyl group and/or a biphenyl group, a aralkyl phenol resin such as a naphthol aralkyl resin having a phenyl group and/or a phenyl group extending, double Phenolic compounds, etc., which may be used singly or in combination.
硬化劑的含量並無特別限定,較佳為成型層整體的2質量%~10質量%,尤其較佳為4質量%~7質量%。硬化劑可僅使用一種,亦可使用兩種以上。 另外,於樹脂為環氧樹脂的情況下,作為硬化劑,可較佳地使用具有酚性羥基的硬化劑,於該情況下,所述環氧樹脂的環氧基與具有酚性羥基的硬化劑的酚性羥基的當量比(環氧基/酚性羥基)並無特別限定,較佳為0.5~2.0,尤其較佳為0.7~1.5。若當量比為所述範圍內,則硬化性及耐濕可靠性尤其優異。The content of the curing agent is not particularly limited, but is preferably 2% by mass to 10% by mass based on the entire molded layer, and particularly preferably 4% by mass to 7% by mass. The hardener may be used singly or in combination of two or more. Further, in the case where the resin is an epoxy resin, as the curing agent, a hardener having a phenolic hydroxyl group can be preferably used, in which case the epoxy group of the epoxy resin and the hardening having a phenolic hydroxyl group are used. The equivalent ratio (epoxy group/phenolic hydroxyl group) of the phenolic hydroxyl group of the agent is not particularly limited, but is preferably 0.5 to 2.0, and particularly preferably 0.7 to 1.5. When the equivalent ratio is within the above range, the hardenability and the moisture resistance reliability are particularly excellent.
較佳為於成型層中含有無機填充材。作為所述無機填充材,例如可列舉:滑石、煅燒黏土、未煅燒黏土、雲母、玻璃等矽酸鹽,氧化鈦、氧化鋁、熔融二氧化矽(球狀熔融二氧化矽、破碎熔融二氧化矽)、結晶二氧化矽等二氧化矽粉末等氧化物,碳酸鈣、碳酸鎂、水滑石等碳酸鹽,氫氧化鋁、氫氧化鎂、氫氧化鈣等氫氧化物,硫酸鋇、硫酸鈣、亞硫酸鈣等硫酸鹽或亞硫酸鹽,硼酸鋅、偏硼酸鋇、硼酸鋁、硼酸鈣、硼酸鈉等硼酸鹽,氮化鋁、氮化硼、氮化矽等氮化物等。所述無機填充材可單獨使用,亦可混合使用。該些中亦較佳為熔融二氧化矽、結晶二氧化矽等二氧化矽粉末,尤其較佳為球狀熔融二氧化矽。藉此,可提高耐熱性、耐濕性、強度等。所述無機填充材的形狀並無特別限定,較佳為正球狀,且較佳為粒度分佈寬廣。藉此,尤其可提高成型樹脂組成物的流動性。進而,亦可藉由偶合劑來對所述無機填充材的表面進行表面處理。It is preferred to contain an inorganic filler in the shaped layer. Examples of the inorganic filler include talc, calcined clay, uncalcined clay, mica, glass, etc., titanium oxide, aluminum oxide, molten cerium oxide (spherical molten cerium oxide, broken molten oxidized矽), oxides such as cerium oxide powder such as crystalline cerium oxide, carbonates such as calcium carbonate, magnesium carbonate, and hydrotalcite; hydroxides such as aluminum hydroxide, magnesium hydroxide, and calcium hydroxide; barium sulfate and calcium sulfate; Sulfate or sulfite such as calcium sulfite, borate such as zinc borate, barium metaborate, aluminum borate, calcium borate or sodium borate; nitride such as aluminum nitride, boron nitride or tantalum nitride. The inorganic fillers may be used singly or in combination. Among these, cerium oxide powder such as molten cerium oxide or crystalline cerium oxide is preferable, and spherical molten cerium oxide is particularly preferable. Thereby, heat resistance, moisture resistance, strength, and the like can be improved. The shape of the inorganic filler is not particularly limited, but is preferably a spherical shape, and preferably has a broad particle size distribution. Thereby, the fluidity of the molded resin composition can be particularly improved. Further, the surface of the inorganic filler may be surface-treated by a coupling agent.
成型層中所含的所述無機填充材的含量並無特別限定,較佳為所述成型樹脂組成物整體的20質量%~95質量%,尤其較佳為30質量%~90質量%。若含量為所述下限值以上,則抑制耐濕性的降低,若設為所述上限值以下,則可維持良好的流動性。無機填充材可僅使用一種,亦可使用兩種以上。The content of the inorganic filler contained in the molded layer is not particularly limited, but is preferably 20% by mass to 95% by mass based on the entire molded resin composition, and particularly preferably 30% by mass to 90% by mass. When the content is at least the lower limit value, the decrease in moisture resistance is suppressed, and when the content is at most the upper limit value, good fluidity can be maintained. The inorganic filler may be used singly or in combination of two or more.
另外,於無損本發明的目的的範圍內,亦可於成型層中添加1,8-二氮雜雙環[5,4,0]十一烯-7等二氮雜雙環烯烴及其衍生物,三丁胺、苄基二甲胺等胺系化合物,2-甲基咪唑等咪唑化合物,三苯基膦、甲基二苯基膦等有機膦類,四苯基鏻·四苯基硼酸鹽、四苯基鏻·四苯甲酸硼酸鹽、四苯基鏻·四萘甲酸硼酸鹽、四苯基鏻·四萘甲醯氧基硼酸鹽、四苯基鏻·四萘氧基硼酸鹽等四取代鏻·四取代硼酸鹽等硬化促進劑,環氧基矽烷、巰基矽烷、胺基矽烷、烷基矽烷、脲基矽烷、乙烯基矽烷等的矽烷偶合劑,或鈦酸酯偶合劑、鋁偶合劑、鋁/鋯偶合劑等偶合劑,碳黑、氧化鐵(bengala)等著色劑,巴西棕櫚蠟等天然蠟,聚乙烯蠟等合成蠟,硬脂酸或硬脂酸鋅等高級脂肪酸及其金屬鹽類,石蠟等脫模劑,矽油、矽橡膠等低應力化成分,溴化環氧樹脂或三氧化銻、氫氧化鋁、氫氧化鎂、硼酸鋅、鉬酸鋅、磷腈等阻燃劑,氧化鉍水合物等無機離子交換體等添加劑。該些成分可分別僅使用一種,亦可使用兩種以上。Further, in the range which does not impair the object of the present invention, a diazabicycloalkene such as 1,8-diazabicyclo[5,4,0]undecene-7 and a derivative thereof may be added to the shaped layer. An amine compound such as tributylamine or benzyl dimethylamine; an imidazole compound such as 2-methylimidazole; an organic phosphine such as triphenylphosphine or methyl diphenylphosphine; tetraphenylphosphonium tetraphenyl borate; Tetrasubstituted tetraphenylphosphonium tetracarboxylic acid borate, tetraphenylphosphonium tetradecanoic acid borate, tetraphenylphosphonium tetramethylammonium decyloxyborate, tetraphenylphosphonium tetradecyloxyborate a hardening accelerator such as a tetra-substituted borate, a decane coupling agent such as an epoxy decane, a mercapto decane, an amino decane, an alkyl decane, a ureido quinane or a vinyl decane, or a titanate coupling agent or an aluminum coupling agent. , coupling agent such as aluminum/zirconium coupling agent, coloring agent such as carbon black, iron oxide (bengala), natural wax such as carnauba wax, synthetic wax such as polyethylene wax, higher fatty acid such as stearic acid or zinc stearate and its metal Salt, paraffin and other mold release agents, low stress components such as eucalyptus oil and bismuth rubber, brominated epoxy resin or antimony trioxide, hydrogen peroxide Additive magnesium hydroxide, zinc borate, zinc molybdate, phosphazene flame retardants, bismuth oxide hydrate inorganic ion exchanger and so on. These components may be used alone or in combination of two or more.
作為成型層的市售品,可列舉:住友貝克萊特(Sumitomo Bakelite)製造的蘇米康(sumikon)EME-G750系列、蘇米康(sumikon)EME-G760系列、蘇米康(sumikon)EME-G770系列、蘇米康(sumikon)EME-G790系列,日立化成製造的CEL系列,長瀨化成(Nagase chemteX)製造的R4000系列,漢高(Henkel)製造的GR系列,京瓷化學(Kyocera Chemical)製造的KE系列等。As a commercially available product of the molded layer, Sumikon EME-G750 series manufactured by Sumitomo Bakelite, Sumikon EME-G760 series, and Sumikon EME- are mentioned. G770 series, Sumikon EME-G790 series, CEL series manufactured by Hitachi Chemical Co., Ltd., R4000 series manufactured by Nagase chemteX, GR series manufactured by Henkel, manufactured by Kyocera Chemical KE series and so on.
成型層40的厚度較佳為於最薄部分為100 μm以上,更佳為1000 μm以上。另外,作為厚度的上限值,較佳為於最薄部分為3000 μm以下,更佳為5000 μm以下。The thickness of the molding layer 40 is preferably 100 μm or more, and more preferably 1000 μm or more in the thinnest portion. Further, the upper limit of the thickness is preferably 3000 μm or less, and more preferably 5000 μm or less in the thinnest portion.
作為成型層40的形成方法,可列舉:層壓膜狀的成型樹脂組成物的方法、藉由網版印刷或分配器形成膏狀的成型樹脂組成物的方法、對液狀的成型樹脂組成物進行烘烤的方法、使用固體的壓縮成型樹脂組成物而進行加熱的方法。Examples of the method for forming the molding layer 40 include a method of laminating a film-form molding resin composition, a method of forming a paste-form molding resin composition by screen printing or a dispenser, and a liquid molding resin composition. A method of baking and a method of heating using a solid compression-molded resin composition.
另外,本發明中,於形成成型層40時,亦可採用使用熔融樹脂的態樣。於該情況下,覆蓋晶粒30時的成型樹脂組成物的黏度較佳為3.0 Pa·s~20.0 Pa·s左右。 於使用熔融樹脂的情況下,成型樹脂組成物是例如使用混合機等將原料充分且均勻地混合後,進而利用熱輥、捏合機、擠出機等混練機進行熔融混練,冷卻後加以粉碎而獲得。 利用成型樹脂組成物進行密封時的黏度並無特別限定,例如為3.0 Pa·s以上,更佳為5.0 Pa·s以上。另一方面,所述黏度較佳為30.0 Pa·s以下,更佳為20.0 Pa·s以下。藉此可抑制空隙的產生。黏度例如可藉由高化式流動試驗儀等來求出。於利用成型樹脂組成物進行密封後,將成型樹脂組成物硬化。作為將成型樹脂組成物硬化的方法,可列舉進行加熱的方法、進行光照射的方法等。Further, in the present invention, in the case of forming the molding layer 40, a state in which a molten resin is used may be employed. In this case, the viscosity of the molded resin composition when covering the crystal grains 30 is preferably about 3.0 Pa·s to 20.0 Pa·s. In the case of using a molten resin, the molded resin composition is sufficiently and uniformly mixed with a raw material, for example, by a mixer or the like, and further melt-kneaded by a kneading machine such as a hot roll, a kneader or an extruder, and then cooled and pulverized. obtain. The viscosity at the time of sealing by the molding resin composition is not particularly limited, and is, for example, 3.0 Pa·s or more, and more preferably 5.0 Pa·s or more. On the other hand, the viscosity is preferably 30.0 Pa·s or less, more preferably 20.0 Pa·s or less. Thereby, the generation of voids can be suppressed. The viscosity can be obtained, for example, by a high-pressure flow tester or the like. After sealing with a molding resin composition, the molding resin composition is cured. Examples of the method of curing the molded resin composition include a method of heating, a method of performing light irradiation, and the like.
成型層40亦可利用固體的壓縮成型樹脂組成物進行成型而形成。即,亦可於模具內藉由加熱加壓將固體的壓縮成型樹脂組成物成型,從而形成成型層40。此處,作為固體的壓縮成型樹脂組成物,可例示將所述熔融樹脂熔融混練、冷卻後,加以顆粒(pallet)化而成的樹脂顆粒。 再者,成型層並非必須使用「模」,層壓膜狀的成型樹脂組成物的方法、藉由網版印刷或分配器形成膏狀的成型樹脂組成物的方法、塗佈液狀的成型樹脂組成物並使之硬化的情況等亦包含於本發明的範圍中。The molding layer 40 can also be formed by molding using a solid compression-molded resin composition. That is, the solid molded compression-molded resin composition may be molded by heat and pressure in a mold to form the molded layer 40. Here, as a solid compression-molding resin composition, resin pellets obtained by melt-kneading the molten resin, cooling, and then pelletizing the resin may be exemplified. Further, the molding layer does not have to use a "die", a method of laminating a film-form molding resin composition, a method of forming a paste-form molding resin composition by screen printing or a dispenser, or a coating liquid-like molding resin. The case where the composition is hardened and the like are also included in the scope of the present invention.
於本發明的半導體元件的製造方法中,可利用不使暫時接著劑層藉由反應而硬化的、所謂非反應系的手段形成暫時接著劑層。In the method for producing a semiconductor device of the present invention, a temporary adhesive layer can be formed by a so-called non-reactive method which does not cure the temporary adhesive layer by a reaction.
本發明的半導體元件的製造方法中,可於成型層形成後進行100℃以上的熱處理。半導體元件的製造製程中有時會進行100℃以上的熱處理,但本發明可耐受此種高溫處理,就該點而言價值高。加熱處理可於載體基板的剝離前進行,亦可於載體基板或暫時接著劑層的剝離·去除後進行。另外,加熱處理溫度較佳為100℃以上,更佳為110℃以上,進而更佳為140℃以上。上限較佳為260℃以下,更佳為220℃以下。藉由對成型層40進一步進行加熱處理,例如於使用熱硬化性樹脂(較佳為環氧樹脂)作為成型樹脂組成物的情況下,可充分地進行熱硬化性樹脂的硬化。作為加熱處理時間,可例示10分鐘~10小時。In the method for producing a semiconductor device of the present invention, heat treatment at 100 ° C or higher can be performed after the formation of the formed layer. Although heat treatment of 100 ° C or higher is sometimes performed in the manufacturing process of the semiconductor element, the present invention can withstand such high temperature treatment, and is high in value at this point. The heat treatment may be performed before the peeling of the carrier substrate, or after the peeling and removal of the carrier substrate or the temporary adhesive layer. Further, the heat treatment temperature is preferably 100 ° C or higher, more preferably 110 ° C or higher, and still more preferably 140 ° C or higher. The upper limit is preferably 260 ° C or lower, more preferably 220 ° C or lower. By further heat-treating the molding layer 40, for example, when a thermosetting resin (preferably an epoxy resin) is used as the molding resin composition, the curing of the thermosetting resin can be sufficiently performed. The heat treatment time can be exemplified by 10 minutes to 10 hours.
其次,如圖1的(A4)所示,自積層體剝離載體基板10(此處所述的剝離為包括脫離、分離的主旨)。載體基板10的剝離的方法並無特別限定,較佳為藉由於40℃以下的溫度下的機械性處理而自積層體剝離載體基板10。此時,可僅剝離載體基板,亦可與載體基板一併剝離一層或兩層以上的暫時接著劑層20。 剝離位置可藉由調節兩層以上的暫時接著劑層中調配的脫模性高的成分的調配量來調整。例如,於欲在載體基板及與載體基板相接的暫時接著劑層之間進行剝離的情況下,可在與所述載體基板相接的暫時接著劑層中更多地調配脫模性高的成分。尤其若脫模性高的成分具有偏向存在性則為有效的。可根據用途等適當規定在積層體的哪一位置處進行剝離。較佳為在載體基板與暫時接著劑層的界面處進行剝離。 關於剝離,例如較佳為不進行任何處理而自載體基板的端部對成型層向垂直方向拉起以進行剝離。此時,亦較佳為利用刀具等銳利的夾具於載體基板與暫時接著劑層的間隙中切入切口之後再進行剝離。所述分離時的速度較佳為30 mm/min~120 mm/min,更佳為40 mm/min~100 mm/min。 剝離時的溫度較佳為40℃以下,更佳為10℃~40℃,進而更佳為20℃~30℃。 除所述以外,關於載體基板的剝離,亦可使用剝離液將暫時接著劑層溶解而自積層體剝離載體基板。作為該情況下的剝離液,可使用溶劑(有機溶劑)。Next, as shown in FIG. 1 (A4), the carrier substrate 10 is peeled off from the laminated body (the peeling described herein is intended to include separation and separation). The method of peeling off the carrier substrate 10 is not particularly limited, and it is preferable that the carrier substrate 10 is peeled off from the laminate by mechanical treatment at a temperature of 40 ° C or lower. In this case, only the carrier substrate may be peeled off, or one or two or more temporary adhesive layers 20 may be peeled off together with the carrier substrate. The peeling position can be adjusted by adjusting the blending amount of the highly releasable component blended in the two or more temporary adhesive layers. For example, in the case where peeling is to be performed between the carrier substrate and the temporary adhesive layer that is in contact with the carrier substrate, the release agent having a high release property can be more frequently disposed in the temporary adhesive layer that is in contact with the carrier substrate. ingredient. In particular, it is effective if the component having high mold release property has a biased existence. It is possible to appropriately stipulate at a position of the laminated body according to the use or the like. Preferably, the peeling is performed at the interface between the carrier substrate and the temporary adhesive layer. Regarding the peeling, for example, it is preferred that the molding layer is pulled up in the vertical direction from the end portion of the carrier substrate to perform peeling without any treatment. At this time, it is also preferable to perform the peeling after cutting the slit in the gap between the carrier substrate and the temporary adhesive layer by a sharp jig such as a cutter. The speed at the time of separation is preferably from 30 mm/min to 120 mm/min, more preferably from 40 mm/min to 100 mm/min. The temperature at the time of peeling is preferably 40 ° C or lower, more preferably 10 ° C to 40 ° C, still more preferably 20 ° C to 30 ° C. In addition to the above, in the peeling of the carrier substrate, the temporary adhesive layer may be dissolved using a peeling liquid to peel the carrier substrate from the laminate. As the peeling liquid in this case, a solvent (organic solvent) can be used.
於已剝離載體基板的積層體上殘留一層或兩層以上的暫時接著劑層的情況下,通常去除暫時接著劑層。暫時接著劑層的去除較佳為於40℃以下進行。 作為暫時接著劑層的去除手段,並無特別規定,可列舉於已剝離載體基板的積層體中,於40℃以下的溫度下機械性去除暫時接著劑層。此處所謂的機械性,是指不進行化學性處理等而進行剝離,為亦包括用手進行剝離的主旨。暫時接著劑層的去除時的溫度較佳為40℃以下,更佳為10℃~40℃,進而更佳為20℃~30℃。為了提高剝離性,亦可照射放射線或進行加熱而使一部分接著劑層變質。 另外,暫時接著劑層亦可使用溶劑(有機溶劑)進行剝離。When one or two or more temporary adhesive layers are left on the laminated body of the peeled carrier substrate, the temporary adhesive layer is usually removed. The removal of the temporary adhesive layer is preferably carried out at 40 ° C or lower. The means for removing the temporary adhesive layer is not particularly limited, and the temporary adhesive layer is mechanically removed at a temperature of 40 ° C or lower in the laminate of the peeled carrier substrate. The term "mechanical property" as used herein refers to peeling without chemical treatment or the like, and also includes the purpose of peeling off by hand. The temperature at which the temporary adhesive layer is removed is preferably 40 ° C or lower, more preferably 10 ° C to 40 ° C, and still more preferably 20 ° C to 30 ° C. In order to improve the peelability, a part of the adhesive layer may be deteriorated by irradiating radiation or heating. Further, the temporary adhesive layer may be peeled off using a solvent (organic solvent).
於暫時接著劑層20附著於載體基板10的情況下,可藉由自載體基板10去除暫時接著劑層20而使載體基板10再生。作為去除暫時接著劑層20的方法,若為膜狀的狀態,則可列舉:藉由刷子、超音波、冰粒子、霧劑(aerosol)的吹附的物理性去除方法;使其溶解於水溶液或有機溶劑而溶解去除的方法;藉由光化射線、放射線、熱的照射而使其分解、氣化的方法等化學性去除方法;根據載體基板,可利用先前已知的清洗方法。 例如,於使用元件基板作為載體基板的情況下,可使用先前已知的矽晶圓的清洗方法,例如作為於進行化學性去除時可使用的水溶液或有機溶劑,可列舉強酸、強鹼、強氧化劑或該些的混合物,具體而言,可列舉:硫酸、鹽酸、氫氟酸、硝酸、有機酸等酸類;四甲基銨、氨、有機鹼等鹼類;過氧化氫等氧化劑;或氨與過氧化氫的混合物、鹽酸與過氧化氫水的混合物、硫酸與過氧化氫水的混合物、氫氟酸與過氧化氫水的混合物、氫氟酸與氟化銨的混合物等。When the temporary adhesive layer 20 is attached to the carrier substrate 10, the carrier substrate 10 can be regenerated by removing the temporary adhesive layer 20 from the carrier substrate 10. As a method of removing the temporary adhesive layer 20, in the form of a film, a physical removal method by blowing a brush, an ultrasonic wave, an ice particle, or an aerosol can be mentioned; A method of dissolving and removing an organic solvent; a chemical removal method such as a method of decomposing and vaporizing by actinic rays, radiation, or heat; and a conventionally known cleaning method can be used depending on the carrier substrate. For example, in the case of using an element substrate as a carrier substrate, a previously known cleaning method of a germanium wafer can be used, for example, as an aqueous solution or an organic solvent which can be used for chemical removal, and examples thereof include strong acid, strong alkali, and strong The oxidizing agent or a mixture thereof may specifically be an acid such as sulfuric acid, hydrochloric acid, hydrofluoric acid, nitric acid or an organic acid; an alkali such as tetramethylammonium, ammonia or an organic base; an oxidizing agent such as hydrogen peroxide; or ammonia. a mixture with hydrogen peroxide, a mixture of hydrochloric acid and hydrogen peroxide water, a mixture of sulfuric acid and hydrogen peroxide water, a mixture of hydrofluoric acid and hydrogen peroxide water, a mixture of hydrofluoric acid and ammonium fluoride, and the like.
就使用經再生的載體基板的情況下的接著性的觀點而言,較佳為使用載體基板清洗液。 載體基板清洗液較佳為包含pKa小於0的酸(強酸)與過氧化氫。作為pKa小於0的酸,可自碘化氫、高氯酸、溴化氫、氯化氫、硝酸、硫酸等無機酸或烷基磺酸、芳基磺酸等有機酸中選擇。就載體基板上的暫時接著劑層的清洗性的觀點而言,較佳為無機酸,最佳為硫酸。From the viewpoint of the adhesion in the case of using the regenerated carrier substrate, it is preferred to use a carrier substrate cleaning solution. The carrier substrate cleaning solution preferably contains an acid (strong acid) having a pKa of less than 0 and hydrogen peroxide. The acid having a pKa of less than 0 may be selected from inorganic acids such as hydrogen iodide, perchloric acid, hydrogen bromide, hydrogen chloride, nitric acid, sulfuric acid, or the like, or an organic acid such as an alkylsulfonic acid or an arylsulfonic acid. From the viewpoint of the cleaning property of the temporary adhesive layer on the carrier substrate, a mineral acid is preferred, and sulfuric acid is preferred.
作為過氧化氫,可較佳地使用30質量%的過氧化氫水,所述強酸與30質量%的過氧化氫水的混合比以質量比計較佳為0.1:1~100:1,更佳為1:1~10:1,最佳為3:1~5:1。As the hydrogen peroxide, 30% by mass of hydrogen peroxide water can be preferably used, and the mixing ratio of the strong acid to 30% by mass of hydrogen peroxide water is preferably 0.1:1 to 100:1 by mass ratio, more preferably It is 1:1 to 10:1, and the best is 3:1 to 5:1.
其次,於本發明的半導體元件的製造方法中,對用於暫時接著劑的形成的暫時接著劑組成物進行說明。Next, in the method for producing a semiconductor device of the present invention, a temporary adhesive composition for forming a temporary adhesive will be described.
<暫時接著劑組成物> 本發明中使用的暫時接著劑層通常可使用暫時接著劑組成物來形成。 暫時接著劑組成物較佳為包含樹脂,更佳為包含樹脂與溶劑。暫時接著劑組成物進而較佳為包含含有氟原子及矽原子中的至少一者的化合物。<Temporary Adhesive Composition> The temporary adhesive layer used in the present invention can be usually formed using a temporary adhesive composition. The temporary adhesive composition preferably contains a resin, and more preferably contains a resin and a solvent. The temporary adhesive composition further preferably contains a compound containing at least one of a fluorine atom and a ruthenium atom.
<<樹脂>> 本發明中使用的樹脂較佳為彈性體。藉由使用彈性體,可亦追隨載體基板的微細凹凸,並利用適度的錨固(anchor)效果而形成接著性優異的暫時接著劑。另外,當將載體基板自積層體剝離時,可不對積層體施加應力地將載體基板自積層體剝離,可防止積層體的破損或剝落。 再者,於本說明書中,所謂彈性體是表示顯示出彈性變形的高分子化合物。即,定義為具有如下性質的高分子化合物:當施加外力時,相應於該外力而瞬間發生變形,且去除外力時於短時間內恢復至原來的形狀。 作為暫時接著劑中所含的樹脂,可例示具有苯乙烯結構的熱塑性彈性體、熱塑性矽氧烷聚合物、環烯烴系聚合物、丙烯酸樹脂、聚碳酸酯、聚醚碸、熱塑性聚醯胺、熱塑性聚醯亞胺,較佳為包含具有苯乙烯結構的熱塑性彈性體、熱塑性矽氧烷聚合物、環烯烴系聚合物、丙烯酸樹脂及熱塑性聚醯亞胺中的至少一種,更佳為包含具有苯乙烯結構的熱塑性彈性體、環烯烴系聚合物、各種嵌段共聚物及丙烯酸樹脂中的至少一種,進而更佳為包含具有苯乙烯結構的熱塑性彈性體及環烯烴系聚合物中的至少一種,特佳為包含具有苯乙烯結構的熱塑性彈性體。<<Resin>> The resin used in the present invention is preferably an elastomer. By using an elastomer, it is possible to follow the fine unevenness of the carrier substrate, and to form a temporary adhesive excellent in adhesion by an appropriate anchor effect. Further, when the carrier substrate is peeled off from the laminate, the carrier substrate can be peeled off from the laminate without applying stress to the laminate, and the laminate can be prevented from being damaged or peeled off. In the present specification, the elastomer is a polymer compound which exhibits elastic deformation. That is, it is defined as a polymer compound having a property that when an external force is applied, deformation occurs instantaneously in response to the external force, and when the external force is removed, the original shape is restored in a short time. The resin contained in the temporary adhesive agent may, for example, be a thermoplastic elastomer having a styrene structure, a thermoplastic siloxane polymer, a cycloolefin polymer, an acrylic resin, a polycarbonate, a polyether oxime, or a thermoplastic polyamide. The thermoplastic polyimide, preferably comprising at least one of a thermoplastic elastomer having a styrene structure, a thermoplastic siloxane polymer, a cycloolefin polymer, an acrylic resin, and a thermoplastic polyimide, more preferably comprising At least one of a thermoplastic elastomer having a styrene structure, a cycloolefin polymer, various block copolymers, and an acrylic resin, and more preferably at least one of a thermoplastic elastomer having a styrene structure and a cycloolefin polymer. It is particularly preferred to include a thermoplastic elastomer having a styrene structure.
<<<具有苯乙烯結構的熱塑性彈性體>>> 暫時接著劑組成物較佳為含有具有苯乙烯結構的熱塑性彈性體。具有苯乙烯結構的熱塑性彈性體並無特別規定,可使用公知的苯乙烯系彈性體。 本發明中使用的具有苯乙烯結構的熱塑性彈性體的較佳實施形態為於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體X,可例示亦進而包含在所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體Y的情況。 藉由併用彈性體X與彈性體Y而具有優異的剝離性且加工基板的研磨面的平坦性(以下亦稱為平坦研磨性)良好,從而可有效地抑制研磨後的加工基板的翹曲的產生。獲得此種效果的機制可推測為由以下所得者。 即,所述彈性體X為比較堅硬的材料,因此藉由包含彈性體X,可製造剝離性優異的暫時接著劑層。另外,彈性體Y為比較柔軟的材料,因此容易形成具有彈性的暫時接著劑層。另外,即便對研磨後的積層體進行加熱處理並於其後加以冷卻,亦可藉由暫時接著劑緩和冷卻時產生的內部應力,從而可有效地抑制翹曲的產生。例如,於形成成型層後將積層體冷卻至室溫為止的過程中,積層體的翹曲藉由應力緩和而減少,可藉由本發明獲得平坦的積層體。 另外,即便於彈性體X中調配彈性體Y,亦存在彈性體X發生相分離的區域等,藉此可充分地達成利用彈性體X的優異的剝離性。<<<The thermoplastic elastomer having a styrene structure>>> The temporary adhesive composition preferably contains a thermoplastic elastomer having a styrene structure. The thermoplastic elastomer having a styrene structure is not particularly limited, and a known styrene-based elastomer can be used. A preferred embodiment of the thermoplastic elastomer having a styrene structure used in the present invention is an elastomer X containing a repeating unit derived from styrene in a ratio of 50% by mass or more and 95% by mass or less in all the repeating units. The example further includes the case where the elastomer Y containing a repeating unit derived from styrene is contained in a ratio of 10% by mass or more and less than 50% by mass in all the repeating units. By using the elastomer X and the elastomer Y in combination, the flatness of the polished surface of the processed substrate (hereinafter also referred to as flat polishing property) is excellent, and the warpage of the processed substrate after polishing can be effectively suppressed. produce. The mechanism for obtaining such an effect can be presumed to be the following. That is, since the elastomer X is a relatively hard material, by including the elastomer X, a temporary adhesive layer having excellent releasability can be produced. Further, since the elastomer Y is a relatively soft material, it is easy to form a temporary adhesive layer having elasticity. Further, even if the laminated body after polishing is subjected to heat treatment and then cooled, the internal stress generated during cooling can be relaxed by the temporary adhesive, whereby the occurrence of warpage can be effectively suppressed. For example, in the process of cooling the laminated body to room temperature after forming the formed layer, the warpage of the laminated body is reduced by stress relaxation, and a flat laminated body can be obtained by the present invention. In addition, even if the elastomer Y is blended in the elastomer X, there is a region where the elastomer X is phase-separated, and the excellent releasability by the elastomer X can be sufficiently achieved.
作為具有苯乙烯結構的熱塑性彈性體,並無特別限制,可根據目的而適當選擇。例如可列舉:苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-丁二烯-丁烯-苯乙烯共聚物(SBBS)及該些的氫化物、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(SEPS)、苯乙烯-乙烯-乙烯-丙烯-苯乙烯嵌段共聚物等。The thermoplastic elastomer having a styrene structure is not particularly limited and may be appropriately selected depending on the purpose. For example, styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene embedded Segment copolymer (SEBS), styrene-butadiene-butene-styrene copolymer (SBBS) and these hydrides, styrene-ethylene-propylene-styrene block copolymer (SEPS), styrene - an ethylene-ethylene-propylene-styrene block copolymer or the like.
具有苯乙烯結構的熱塑性彈性體的重量平均分子量較佳為2,000~200,000,更佳為10,000~200,000,進而更佳為50,000~100,000。藉由處於該範圍內,具有苯乙烯結構的熱塑性彈性體於溶劑中的溶解性變得優異,塗佈性提高。另外,於將加工基板自載體基板剝離後,當去除所殘存的暫時接著劑時,於溶劑中的溶解性亦優異,因此存在殘渣並不會殘留於加工基板或載體基板的優點。The thermoplastic elastomer having a styrene structure preferably has a weight average molecular weight of 2,000 to 200,000, more preferably 10,000 to 200,000, still more preferably 50,000 to 100,000. By being in this range, the thermoplastic elastomer having a styrene structure is excellent in solubility in a solvent, and coatability is improved. Further, after the processed substrate is peeled off from the carrier substrate, when the remaining temporary adhesive is removed, the solubility in the solvent is also excellent, so that there is an advantage that the residue does not remain on the processed substrate or the carrier substrate.
於本發明中,作為具有苯乙烯結構的熱塑性彈性體,可列舉嵌段共聚物、無規共聚物、接枝共聚物,較佳為嵌段共聚物,更佳為單末端或兩末端是苯乙烯的嵌段共聚物,特佳為兩末端是苯乙烯的嵌段共聚物。若將具有苯乙烯結構的熱塑性彈性體的兩端設為苯乙烯的嵌段共聚物(源自苯乙烯的重複單元),則存在熱穩定性進一步提高的傾向。其原因在於:耐熱性高的源自苯乙烯的重複單元存在於末端。特別是,藉由源自苯乙烯的重複單元的嵌段部位為反應性的聚苯乙烯系硬嵌段而存在耐熱性、耐化學品性更優異的傾向,而較佳。另外,認為若將該些設為嵌段共聚物,則於200℃以上時於硬嵌段與軟嵌段中進行相分離。認為該相分離的形狀有助於抑制元件晶圓的加工基板表面的凹凸的產生。此外,就於溶劑中的溶解性及於抗蝕劑溶劑中的耐性的觀點而言,亦更佳為此種樹脂。In the present invention, as the thermoplastic elastomer having a styrene structure, a block copolymer, a random copolymer, a graft copolymer, preferably a block copolymer, more preferably a single terminal or a benzene at both ends is exemplified. A block copolymer of ethylene, particularly preferably a block copolymer in which both ends are styrene. When the both ends of the thermoplastic elastomer having a styrene structure are a block copolymer of styrene (a repeating unit derived from styrene), thermal stability tends to be further improved. The reason for this is that a repeating unit derived from styrene having high heat resistance exists at the terminal. In particular, a block portion derived from a repeating unit derived from styrene is a reactive polystyrene-based hard block, and heat resistance and chemical resistance are more preferable, and it is preferable. Further, it is considered that when these are block copolymers, phase separation is performed between the hard block and the soft block at 200 ° C or higher. It is considered that the shape of the phase separation contributes to suppression of generation of irregularities on the surface of the processed substrate of the element wafer. Further, it is more preferably such a resin from the viewpoint of solubility in a solvent and resistance in a resist solvent.
於本發明中,具有苯乙烯結構的熱塑性彈性體較佳為氫化物。若具有苯乙烯結構的熱塑性彈性體為氫化物,則熱穩定性或保存穩定性提高。進而,剝離性及剝離後的暫時接著劑的清洗去除性提高。再者,所謂氫化物,是指彈性體經氫化(hydrogenation)的結構的聚合物。In the present invention, the thermoplastic elastomer having a styrene structure is preferably a hydride. If the thermoplastic elastomer having a styrene structure is a hydride, thermal stability or storage stability is improved. Further, the peeling property and the cleaning and removal property of the temporary adhesive after peeling are improved. Further, the term "hydride" means a polymer having a structure in which an elastomer is hydrogenated.
具有苯乙烯結構的熱塑性彈性體自25℃以20℃/min昇溫的5%熱質量減少溫度較佳為250℃以上,更佳為300℃以上,進而更佳為350℃以上,特佳為400℃以上。另外,上限值並無特別限定,例如較佳為1000℃以下,更佳為800℃以下。根據該態樣,容易形成耐熱性優異的暫時接著劑。進而,藉由提供耐熱性優異的暫時接著劑,可對成型層形成後的積層體提供耐熱性賦予,即可對積層體自身進行加熱處理,其後可進行剝離。 具有苯乙烯結構的熱塑性彈性體較佳為具有如下性質:當將原來的大小設為100%時,於室溫(20℃)下能夠以小的外力使其變形至200%,且當去除外力時,於短時間內恢復至130%以下。The 5% thermal mass reduction temperature of the thermoplastic elastomer having a styrene structure at a temperature of 20 ° C/min from 25 ° C is preferably 250 ° C or higher, more preferably 300 ° C or higher, and still more preferably 350 ° C or higher, and particularly preferably 400. Above °C. Further, the upper limit is not particularly limited, and is, for example, preferably 1000 ° C or lower, more preferably 800 ° C or lower. According to this aspect, it is easy to form a temporary adhesive agent excellent in heat resistance. Further, by providing a temporary adhesive having excellent heat resistance, heat resistance can be imparted to the laminated body after the formation of the molded layer, and the laminated body itself can be heat-treated, and then peeled off. The thermoplastic elastomer having a styrene structure preferably has such a property that when the original size is set to 100%, it can be deformed to 200% with a small external force at room temperature (20 ° C), and when the external force is removed When it is restored to less than 130% in a short time.
作為具有苯乙烯結構的熱塑性彈性體的不飽和雙鍵量,就加工步驟後的剝離性的觀點而言,較佳為小於15 mmol/g,更佳為7 mmol/g以下,進而更佳為小於5 mmol/g,尤佳為小於0.5 mmol/g。關於下限值,並無特別規定,例如可設為0.001 mmol/g以上。 再者,此處所述的不飽和雙鍵量並不包含源自苯乙烯的苯環內的不飽和雙鍵。不飽和雙鍵量可藉由核磁共振(Nuclear Magnetic Resonance,NMR)測定而算出。The amount of the unsaturated double bond of the thermoplastic elastomer having a styrene structure is preferably less than 15 mmol/g, more preferably 7 mmol/g or less, and still more preferably from the viewpoint of the releasability after the processing step. Less than 5 mmol/g, particularly preferably less than 0.5 mmol/g. The lower limit is not particularly limited and may be, for example, 0.001 mmol/g or more. Furthermore, the amount of unsaturated double bonds described herein does not comprise unsaturated double bonds in the benzene ring derived from styrene. The amount of unsaturated double bonds can be calculated by nuclear magnetic resonance (NMR) measurement.
再者,於本說明書中,所謂「源自苯乙烯的重複單元」是源自苯乙烯或使苯乙烯衍生物聚合時聚合物中所含的苯乙烯的構成單元,可具有取代基。作為苯乙烯衍生物,例如可列舉:α-甲基苯乙烯、3-甲基苯乙烯、4-丙基苯乙烯、4-環己基苯乙烯等。作為取代基,例如可列舉:碳數1~5的烷基、碳數1~5的烷氧基、碳數2~5的烷氧基烷基、乙醯氧基、羧基等。In the present specification, the "repeating unit derived from styrene" is a constituent unit derived from styrene or styrene contained in the polymer when the styrene derivative is polymerized, and may have a substituent. Examples of the styrene derivative include α-methylstyrene, 3-methylstyrene, 4-propylstyrene, and 4-cyclohexylstyrene. Examples of the substituent include an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an alkoxyalkyl group having 2 to 5 carbon atoms, an ethoxy group, and a carboxyl group.
作為具有苯乙烯結構的熱塑性彈性體的市售品,例如可列舉:塔夫普倫(Tufprene)A、塔夫普倫(Tufprene)125、塔夫普倫(Tufprene)126S、索盧普倫(Solprene)T、阿薩普倫(Asaprene)T-411、阿薩普倫(Asaprene)T-432、阿薩普倫(Asaprene)T-437、阿薩普倫(Asaprene)T-438、阿薩普倫(Asaprene)T-439、塔夫泰科(Tuftec)H1272、塔夫泰科(Tuftec)P1500、塔夫泰科(Tuftec)H1052、塔夫泰科(Tuftec)H1062、塔夫泰科(Tuftec)M1943、塔夫泰科(Tuftec)M1911、塔夫泰科(Tuftec)H1041、塔夫泰科(Tuftec)MP10、塔夫泰科(Tuftec)M1913、塔夫泰科(Tuftec)H1051、塔夫泰科(Tuftec)H1053、塔夫泰科(Tuftec)P2000、塔夫泰科(Tuftec)H1043(以上為商品名、旭化成(股)製造);彈性體(Elastomer)AR-850C、彈性體(Elastomer)AR-815C、彈性體(Elastomer)AR-840C、彈性體(Elastomer)AR-830C、彈性體(Elastomer)AR-860C、彈性體(Elastomer)AR-875C、彈性體(Elastomer)AR-885C、彈性體(Elastomer)AR-SC-15、彈性體(Elastomer)AR-SC-0、彈性體(Elastomer)AR-SC-5、彈性體(Elastomer)AR-710、彈性體(Elastomer)AR-SC-65、彈性體(Elastomer)AR-SC-30、彈性體(Elastomer)AR-SC-75、彈性體(Elastomer)AR-SC-45、彈性體(Elastomer)AR-720、彈性體(Elastomer)AR-741、彈性體(Elastomer)AR-731、彈性體(Elastomer)AR-750、彈性體(Elastomer)AR-760、彈性體(Elastomer)AR-770、彈性體(Elastomer)AR-781、彈性體(Elastomer)AR-791、彈性體(Elastomer)AR-FL-75N、彈性體(Elastomer)AR-FL-85N、彈性體(Elastomer)AR-FL-60N、彈性體(Elastomer)AR-1050、彈性體(Elastomer)AR-1060、彈性體(Elastomer)AR-1040(以上為商品名、亞隆化成(Aronkasei)製造);科騰(Kraton)D1111、科騰(Kraton)D1113、科騰(Kraton)D1114、科騰(Kraton)D1117、科騰(Kraton)D1119、科騰(Kraton)D1124、科騰(Kraton)D1126、科騰(Kraton)D1161、科騰(Kraton)D1162、科騰(Kraton)D1163、科騰(Kraton)D1164、科騰(Kraton)D1165、科騰(Kraton)D1183、科騰(Kraton)D1193、科騰(Kraton)DX406、科騰(Kraton)D4141、科騰(Kraton)D4150、科騰(Kraton)D4153、科騰(Kraton)D4158、科騰(Kraton)D4270、科騰(Kraton)D4271、科騰(Kraton)D4433、科騰(Kraton)D1170、科騰(Kraton)D1171、科騰(Kraton)D1173、卡利庫斯(Cariflex)IR0307、卡利庫斯(Cariflex)IR0310、卡利庫斯(Cariflex)IR0401、科騰(Kraton)D0242、科騰(Kraton)D1101、科騰(Kraton)D1102、科騰(Kraton)D1116、科騰(Kraton)D1118、科騰(Kraton)D1133、科騰(Kraton)D1152、As a commercial item of the thermoplastic elastomer having a styrene structure, for example, Tufprene A, Tufprene 125, Tufprene 126S, Solupron ( Solprene) T, Asaprene T-411, Asaprene T-432, Asaprene T-437, Asaprene T-438, Asa Asaprene T-439, Tuftec H1272, Tuftec P1500, Tuftec H1052, Tuftec H1062, Taftec ( Tuftec) M1943, Tuftec M1911, Tuftec H1041, Tuftec MP10, Tuftec M1913, Tuftec H1051, tower Tuftec H1053, Tuftec P2000, Tuftec H1043 (above trade name, manufactured by Asahi Kasei); Elastomer AR-850C, elastomer ( Elastomer) AR-815C, Elastomer AR-840C, Elastomer AR-830C, Elastomer AR-860C, Elastomer AR-875C, Elastomer AR-885C, Elastomer AR-SC-15, Elastomer AR-SC-0, Elastomer AR -SC-5, Elastomer AR-710, Elastomer AR-SC-65, Elastomer AR-SC-30, Elastomer AR-SC-75, Elastomer ( Elastomer) AR-SC-45, Elastomer AR-720, Elastomer AR-741, Elastomer AR-731, Elastomer AR-750, Elastomer AR -760, Elastomer AR-770, Elastomer AR-781, Elastomer AR-791, Elastomer AR-FL-75N, Elastomer AR-FL- 85N, Elastomer AR-FL-60N, Elastomer AR-1050, Elastomer AR-1060, Elastomer AR-1040 (above trade name, Aronkasei) ))) Kraton D1111, Kraton D1113, Kraton D1114, Kraton D1117, Kraton (Kraton) D1119, Kraton D1124, Kraton D1126, Kraton D1161, Kraton D1162, Kraton D1163, Kraton D1164, Kraton Kraton) D1165, Kraton D1183, Kraton D1193, Kraton DX406, Kraton D4141, Kraton D4150, Kraton D4153, Kraton ) D4158, Kraton D4270, Kraton D4271, Kraton D4433, Kraton D1170, Kraton D1171, Kraton D1173, Kalicus Cariflex) IR0307, Cariflex IR0310, Cariflex IR0401, Kraton D0242, Kraton D1101, Kraton D1102, Kraton D1116, Kraton D1118, Kraton D1133, Kraton D1152
科騰(Kraton)D1153、科騰(Kraton)D1155、科騰(Kraton)D1184、科騰(Kraton)D1186、科騰(Kraton)D1189、科騰(Kraton)D1191、科騰(Kraton)D1192、科騰(Kraton)DX405、科騰(Kraton)DX408、科騰(Kraton)DX410、科騰(Kraton)DX414、科騰(Kraton)DX415、科騰(Kraton)A1535、科騰(Kraton)A1536、科騰(Kraton)FG1901、科騰(Kraton)FG1924、科騰(Kraton)G1640、科騰(Kraton)G1641、科騰(Kraton)G1642、科騰(Kraton)G1643、科騰(Kraton)G1645、科騰(Kraton)G1633、科騰(Kraton)G1650、科騰(Kraton)G1651、科騰(Kraton)G1652、科騰(Kraton)G1654、科騰(Kraton)G1657、科騰(Kraton)G1660、科騰(Kraton)G1726、科騰(Kraton)G1701、科騰(Kraton)G1702、科騰(Kraton)G1730、科騰(Kraton)G1750、科騰(Kraton)G1765、科騰(Kraton)G4609、科騰(Kraton)G4610(以上為商品名、科騰(Kraton)公司製造);TR2000、TR2001、TR2003、TR2250、TR2500、TR2601、TR2630、TR2787、TR2827、TR1086、TR1600、SIS5002、SIS5200、SIS5250、SIS5405、SIS5505、戴納隆(Dynaron)6100P、戴納隆(Dynaron)4600P、戴納隆(Dynaron)6200P、戴納隆(Dynaron)4630P、戴納隆(Dynaron)8601P、戴納隆(Dynaron)8630P、戴納隆(Dynaron)8600P、戴納隆(Dynaron)8903P、戴納隆(Dynaron)6201B、戴納隆(Dynaron)1321P、戴納隆(Dynaron)1320P、戴納隆(Dynaron)2324P、戴納隆(Dynaron)9901P(以上為商品名、JSR(股)製造);登卡(Denka)STR系列(以上為商品名、電化學工業(股)製造);昆塔克(Quintac)3520、昆塔克(Quintac)3433N、昆塔克(Quintac)3421、昆塔克(Quintac)3620、昆塔克(Quintac)3450、昆塔克(Quintac)3460(日本瑞翁(ZEON)製造);TPE-SB系列(以上為商品名、住友化學(股)製造);拉巴隆(Rabalon)系列(以上為商品名、三菱化學(股)製造);賽普頓(Septon)1001、賽普頓(Septon)8004、賽普頓(Septon)4033、賽普頓(Septon)2104、賽普頓(Septon)8007、賽普頓(Septon)2007、賽普頓(Septon)2004、賽普頓(Septon)2063、賽普頓(Septon)HG252、賽普頓(Septon)8076、賽普頓(Septon)2002、賽普頓(Septon)1020、賽普頓(Septon)8104、賽普頓(Septon)2005、賽普頓(Septon)2006、賽普頓(Septon)4055、賽普頓(Septon)4044、賽普頓(Septon)4077、賽普頓(Septon)4099、賽普頓(Septon)8006、賽普頓(Septon)V9461、賽普頓(Septon)V9475、賽普頓(Septon)V9827、海布拉(Hybrar)7311、海布拉(Hybrar)7125、海布拉(Hybrar)5127、海布拉(Hybrar)5125(以上為商品名、可樂麗(Kuraray)製造);蘇米庫斯(Sumiflex)(以上為商品名、住友貝克萊特(Sumitomo Bakelite)(股)製造);萊奧斯托瑪(Leostomer)、艾庫塔馬(Actymer)(以上為商品名、理研乙烯工業製造)等。Kraton D1153, Kraton D1155, Kraton D1184, Kraton D1186, Kraton D1189, Kraton D1191, Kraton D1192 Kraton DX405, Kraton DX408, Kraton DX410, Kraton DX414, Kraton DX415, Kraton A1535, Kraton A1536, Kraton (Kraton) FG1901, Kraton FG1924, Kraton G1640, Kraton G1641, Kraton G1642, Kraton G1643, Kraton G1645, Kraton Kraton) G1633, Kraton G1650, Kraton G1651, Kraton G1652, Kraton G1654, Kraton G1657, Kraton G1660, Kraton ) G1726, Kraton G1701, Kraton G1702, Kraton G1730, Kraton G1750, Kraton G1765, Kraton G4609, Kraton G4610 (above is the trade name, manufactured by Kraton); TR200 0, TR2001, TR2003, TR2250, TR2500, TR2601, TR2630, TR2787, TR2827, TR1086, TR1600, SIS5002, SIS5200, SIS5250, SIS5405, SIS5505, Dynaron 6100P, Dynaron 4600P, Dana Dynaron 6200P, Dynaron 4630P, Dynaron 8601P, Dynaron 8630P, Dynaron 8600P, Dynaron 8903P, Danalong (Dynaron) Dynaron) 6201B, Dynaron 1321P, Dynaron 1320P, Dynaron 2324P, Dynaron 9901P (above trade name, JSR); (Denka) STR series (above the trade name, electrochemical industry (stock)); Quintac 3520, Quintac 3433N, Quintac 3421, Quintac 3620, Quintac 3450, Quintac 3460 (made by Japan's ZEON); TPE-SB series (above trade name, Sumitomo Chemical Co., Ltd.); Rabalon Series (above is the trade name, three Chemical (stock) manufacturing); Septon 1001, Septon 8004, Septon 4033, Septon 2104, Septon 8007, Saipton (Septon) 2007, Septon 2004, Septon 2063, Septon HG252, Septon 8076, Septon 2002, Septon (Septon) 1020, Septon 8104, Septon 2005, Septon 2006, Septon 4055, Septon 4044, Septon 4077 , Septon 4099, Septon 8006, Septon V9461, Septon V9475, Septon V9827, Hybrar 7311, Sea Hybrar 7125, Hybrar 5127, Hybrar 5125 (above trade name, Kuraray); Sumiflex (above trade name, Sumitomo) Sumitomo Bakelite (manufactured by the stock); Leostomer, Akutama (Actymer) (The above is the trade name, manufactured by Riken Ethylene Industry).
其次,對「彈性體X」中的特有的較佳範圍進行敘述。 彈性體X為於所有重複單元中以50質量%以上且95質量%以下的比例含有源自苯乙烯的重複單元的彈性體,源自苯乙烯的重複單元的含量較佳為超過50質量%且95質量%以下,更佳為50質量%~90質量%,進而更佳為50質量%~80質量%,特佳為55質量%~75質量%,尤佳為56質量%~70質量%。 彈性體X的硬度較佳為83以上,更佳為85以上,進而更佳為90以上。上限值並無特別規定,例如為99以下。再者,硬度是依據JIS(日本工業標準)K6253的方法並利用A型硬度計進行測定而得的值。Next, a specific preferred range of "elastomer X" will be described. The elastomer X is an elastomer containing a repeating unit derived from styrene in a ratio of 50% by mass or more and 95% by mass or less in all the repeating units, and the content of the repeating unit derived from styrene is preferably more than 50% by mass. 95% by mass or less, more preferably 50% by mass to 90% by mass, still more preferably 50% by mass to 80% by mass, particularly preferably 55% by mass to 75% by mass, particularly preferably 56% by mass to 70% by mass. The hardness of the elastomer X is preferably 83 or more, more preferably 85 or more, still more preferably 90 or more. The upper limit is not particularly specified, and is, for example, 99 or less. Further, the hardness is a value measured by a method of JIS (Japanese Industrial Standard) K6253 and measured by a type A durometer.
其次,對「彈性體Y」中的特有的較佳範圍進行敘述。 彈性體Y為於所有重複單元中以10質量%以上且小於50質量%的比例含有源自苯乙烯的重複單元的彈性體,源自苯乙烯的重複單元的含量較佳為10質量%~45質量%,更佳為10質量%~40質量%,進而更佳為12質量%~35質量%,特佳為13質量%~33質量%。 彈性體Y的硬度較佳為82以下,更佳為80以下,進而更佳為78以下。下限值並無特別規定,但為1以上。 另外,彈性體X的硬度與彈性體Y的硬度之差較佳為5~40,更佳為10~35,較佳為15~33,更佳為17~29。藉由設為此種範圍,本發明的效果更有效地得到發揮。Next, a specific preferred range of "elastomer Y" will be described. The elastomer Y is an elastomer containing a repeating unit derived from styrene in a ratio of 10% by mass or more and less than 50% by mass in all the repeating units, and the content of the repeating unit derived from styrene is preferably 10% by mass to 45%. The mass% is more preferably 10% by mass to 40% by mass, still more preferably 12% by mass to 35% by mass, particularly preferably 13% by mass to 33% by mass. The hardness of the elastomer Y is preferably 82 or less, more preferably 80 or less, still more preferably 78 or less. The lower limit is not particularly specified, but is 1 or more. Further, the difference between the hardness of the elastomer X and the hardness of the elastomer Y is preferably from 5 to 40, more preferably from 10 to 35, still more preferably from 15 to 33, still more preferably from 17 to 29. By setting it as such a range, the effect of this invention is exhibited more effectively.
本發明中亦可調配彈性體X及彈性體Y以外的其他彈性體。作為其他彈性體,可使用聚酯系彈性體、聚烯烴系彈性體、聚胺基甲酸酯系彈性體、聚醯胺系彈性體、聚丙烯酸系彈性體、矽酮系彈性體、聚醯亞胺系彈性體等。In the present invention, an elastomer other than the elastomer X and the elastomer Y may be blended. As the other elastomer, a polyester elastomer, a polyolefin elastomer, a polyurethane elastomer, a polyamide elastomer, a polyacryl elastomer, an anthrone elastomer, and a polyfluorene can be used. An imide elastomer or the like.
相對於除了溶劑以外的暫時接著劑組成物的質量,本發明中使用的暫時接著劑組成物中的彈性體X、彈性體Y及其他彈性體的合計量較佳為50.00質量%~99.99質量%,更佳為70.00質量%~99.99質量%,特佳為88.00質量%~99.99質量%。若彈性體的含量為所述範圍,則接著性及剝離性更優異。 另外,本發明中使用的暫時接著劑組成物中的彈性體X、彈性體Y及其他彈性體分別可為多種的組合。The total amount of the elastomer X, the elastomer Y, and the other elastomer in the temporary adhesive composition used in the present invention is preferably from 50.00% by mass to 99.99% by mass based on the mass of the temporary adhesive composition other than the solvent. More preferably, it is 70.00% by mass to 99.99% by mass, particularly preferably 88.00% by mass to 99.99% by mass. When the content of the elastomer is in the above range, the adhesion and the releasability are more excellent. Further, the elastomer X, the elastomer Y, and other elastomers in the temporary adhesive composition used in the present invention may each be in various combinations.
本發明中使用的暫時接著劑組成物中所含的彈性體的含量中,彈性體X與彈性體Y的合計量較佳為佔整體的90質量%以上,更佳為佔95質量%以上,特佳為佔98質量%以上。 於調配彈性體Y的情況下,所述彈性體X與所述彈性體Y的質量比較佳為彈性體X:彈性體Y=5:95~95:5,更佳為20:80~90:10,特佳為40:60~85:15。若為所述範圍,則更有效地抑制翹曲及獲得剝離性。In the content of the elastomer contained in the temporary adhesive composition used in the present invention, the total amount of the elastomer X and the elastomer Y is preferably 90% by mass or more, and more preferably 95% by mass or more. Particularly good is 98% by mass or more. In the case of blending the elastomer Y, the mass of the elastomer X and the elastomer Y is preferably an elastomer X: an elastomer Y = 5: 95 to 95: 5, more preferably 20: 80 to 90: 10, especially good for 40:60 ~ 85:15. If it is the said range, it is more effective in suppressing warpage and obtaining peeling property.
<<<熱塑性矽氧烷聚合物>>> 暫時接著劑組成物可使用熱塑性矽氧烷聚合物作為樹脂成分。 熱塑性矽氧烷聚合物為含有R21 R22 R23 SiO1/2 單元(R21 、R22 、R23 分別為未經取代或經取代的碳原子數1~10的一價烴基或羥基)及SiO4/2 單元且所述R21 R22 R23 SiO1/2 單元/SiO4/2 單元的莫耳比為0.6~1.7的有機聚矽氧烷與下述通式(1)所表示的有機聚矽氧烷部分性地進行脫水縮合而成者,較佳為所述經脫水縮合的有機聚矽氧烷與所述有機聚矽氧烷的比率為99:1~50:50,且重量平均分子量為200,000~1,500,000。 [化1](式中,R11 及R12 分別表示未經取代或經取代的碳原子數1~10的一價烴基,n為5000~10000)<<<Thermoplastic siloxane polymer>>> A thermoplastic siloxane polymer can be used as the resin component for the temporary adhesive composition. The thermoplastic siloxane polymer is a monovalent hydrocarbon group or a hydroxyl group having R 21 R 22 R 23 SiO 1/2 units (R 21 , R 22 and R 23 are respectively unsubstituted or substituted carbon atoms having 1 to 10 carbon atoms) And an organic polyoxane having a molar ratio of 0.6 to 1.7 of the SiO 4/2 unit and the R 21 R 22 R 23 SiO 1/2 unit/SiO 4/2 unit and represented by the following formula (1) The organopolyoxyalkylene is partially dehydrated and condensed, preferably the ratio of the dehydrated condensed organopolyoxane to the organopolyoxane is from 99:1 to 50:50, and The weight average molecular weight is from 200,000 to 1,500,000. [Chemical 1] (wherein R 11 and R 12 each represent an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and n is 5,000 to 10,000)
若為此種熱塑性矽氧烷,則接著性、耐熱性優異,故而較佳。When it is such a thermoplastic siloxane, it is excellent in adhesiveness and heat resistance, and it is preferable.
所述通式(1)中,有機取代基R11 、R12 為未經取代或經取代的碳原子數1~10的一價烴基,具體而言為:甲基、乙基、正丙基、異丙基、正丁基、第三丁基、正戊基、環戊基、正己基等烷基;環己基等環烷基;苯基、甲苯基等芳基等烴基;該些的氫原子的一部分或全部經鹵素原子取代的基;較佳為甲基及苯基。In the above formula (1), the organic substituents R 11 and R 12 are an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, specifically: methyl group, ethyl group, n-propyl group. An alkyl group such as isopropyl, n-butyl, tert-butyl, n-pentyl, cyclopentyl or n-hexyl; a cycloalkyl group such as a cyclohexyl group; a hydrocarbon group such as an aryl group such as a phenyl group or a tolyl group; A group in which a part or all of an atom is substituted with a halogen atom; preferably a methyl group and a phenyl group.
熱塑性有機聚矽氧烷的重量平均分子量為200,000以上,更佳為350,000以上,且為1,500,000以下,更佳為1,000,000以下。進而,較佳為分子量為740以下的低分子量成分含量為0.5質量%以下,更佳為0.1質量%以下。 作為市售品,可例示西萊斯(SILRES)604(旭化成瓦克矽酮(Asahi Kasei Wacker Silicone))。The thermoplastic organic polyoxyalkylene has a weight average molecular weight of 200,000 or more, more preferably 350,000 or more, and 1,500,000 or less, more preferably 1,000,000 or less. Further, the content of the low molecular weight component having a molecular weight of 740 or less is preferably 0.5% by mass or less, more preferably 0.1% by mass or less. As a commercial item, SILRES 604 (Asahi Kasei Wacker Silicone) can be exemplified.
<<<環烯烴系聚合物>>> 作為環烯烴系聚合物,可列舉:降冰片烯系聚合物、單環的環狀烯烴的聚合物、環狀共軛二烯的聚合物、乙烯基脂環式烴聚合物及該些聚合物的氫化物等。作為環烯烴系聚合物的較佳例,可列舉包含至少一種以上的下述通式(II)所表示的重複單元的加成(共)聚合物、及進而包含通式(I)所表示的重複單元的至少一種以上而成的加成(共)聚合物。另外,作為環烯烴系聚合物的其他較佳例,可列舉包含至少一種通式(III)所表示的環狀重複單元的開環(共)聚合物。<<<Cycloolefin polymer>>> Examples of the cycloolefin polymer include a norbornene-based polymer, a monocyclic cyclic olefin polymer, a cyclic conjugated diene polymer, and a vinyl group. An alicyclic hydrocarbon polymer, a hydride of the polymers, and the like. Preferable examples of the cycloolefin polymer include an addition (co)polymer containing at least one repeating unit represented by the following formula (II), and further including a formula represented by the formula (I) An addition (co)polymer of at least one of the repeating units. Further, as another preferable example of the cycloolefin polymer, a ring-opening (co)polymer containing at least one cyclic repeating unit represented by the formula (III) can be mentioned.
[化2] [Chemical 2]
式中,m表示0~4的整數。R1 ~R6 分別表示氫原子或碳數1~10的烴基,X1 ~X3 及Y1 ~Y3 分別表示氫原子、碳數1~10的烴基、鹵素原子、經鹵素原子取代的碳數1~10的烴基、-(CH2 )nCOOR11 、-(CH2 )nOCOR12 、-(CH2 )nNCO、-(CH2 )nNO2 、-(CH2 )nCN、-(CH2 )nCONR13 R14 、-(CH2 )nNR15 R16 、-(CH2 )nOZ、-(CH2 )nW、或者由X1 與Y1 、X2 與Y2 或X3 與Y3 構成的(-CO)2 O、(-CO)2 NR17 。R11 、R12 、R13 、R14 、R15 、R16 及R17 分別表示氫原子或烴基(較佳為碳數1~20的烴基),Z表示烴基或經鹵素取代的烴基,W表示SiR18 p D3-p (R18 表示碳數1~10的烴基,D表示鹵素原子且表示-OCOR18 或-OR18 ,p表示0~3的整數)。n表示0~10的整數。In the formula, m represents an integer of 0-4. R 1 to R 6 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms, and X 1 to X 3 and Y 1 to Y 3 each independently represent a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a halogen atom, and a halogen atom. a hydrocarbon group having 1 to 10 carbon atoms, -(CH 2 )nCOOR 11 , -(CH 2 )nOCOR 12 , -(CH 2 )nNCO, -(CH 2 )nNO 2 , -(CH 2 )nCN, -(CH 2 nCONR 13 R 14 , -(CH 2 )nNR 15 R 16 , -(CH 2 )nOZ, -(CH 2 )nW, or consist of X 1 and Y 1 , X 2 and Y 2 or X 3 and Y 3 (-CO) 2 O, (-CO) 2 NR 17 . R 11 , R 12 , R 13 , R 14 , R 15 , R 16 and R 17 each represent a hydrogen atom or a hydrocarbon group (preferably a hydrocarbon group having 1 to 20 carbon atoms), and Z represents a hydrocarbon group or a halogen-substituted hydrocarbon group, SiR 18 p D 3-p (R 18 represents a hydrocarbon group having 1 to 10 carbon atoms, D represents a halogen atom and represents -OCOR 18 or -OR 18 , and p represents an integer of 0 to 3). n represents an integer of 0 to 10.
降冰片烯系聚合物於日本專利特開平10-7732號公報、日本專利特表2002-504184號公報、US2004/229157A1號公報或WO2004/070463A1號公報等中有所揭示。降冰片烯系聚合物可藉由使降冰片烯系多環狀不飽和化合物彼此進行加成聚合而獲得。另外,視需要亦可使降冰片烯系多環狀不飽和化合物與乙烯、丙烯、丁烯、如丁二烯、異戊二烯般的共軛二烯、如亞乙基降冰片烯般的非共軛二烯進行加成聚合。該降冰片烯系聚合物是由三井化學(股)以艾佩魯(Apel)的商品名銷售,存在玻璃轉移溫度(Tg)不同的例如APL8008T(Tg70℃)、APL6013T(Tg125℃)或APL6015T(Tg145℃)等等級。由寶理塑膠(Poly plastic)(股)銷售有TOPAS8007、TOPAS5013、TOPAS6013、TOPAS6015等顆粒(pellet)。 進而,由富蘭尼(Ferrania)公司銷售有艾碧爾(Appear)3000。The norbornene-based polymer is disclosed in Japanese Patent Laid-Open No. Hei 10-7732, Japanese Patent Publication No. 2002-504184, No. 2004/229157 A1, and WO2004/070463A1. The norbornene-based polymer can be obtained by subjecting a norbornene-based polycyclic unsaturated compound to addition polymerization with each other. Further, if desired, the norbornene-based polycyclic unsaturated compound may be similar to ethylene, propylene, butylene, a conjugated diene such as butadiene or isoprene, such as ethylidene norbornene. The non-conjugated diene is subjected to addition polymerization. The norbornene-based polymer is sold by Mitsui Chemicals Co., Ltd. under the trade name of Apel, and has a glass transition temperature (Tg) such as APL8008T (Tg70 °C), APL6013T (Tg125 °C) or APL6015T ( Tg145 ° C) and other grades. POPs (TOP) 8007, TOPAS 5013, TOPAS 6013, TOPAS 6015 and other pellets are sold by Poly plastic. Further, Appear 3000 is sold by Ferrania.
降冰片烯系聚合物的氫化物可如日本專利特開平1-240517號公報、日本專利特開平7-196736號公報、日本專利特開昭60-26024號公報、日本專利特開昭62-19801號公報、日本專利特開2003-1159767號公報或日本專利特開2004-309979號公報等中所揭示般,藉由於使多環狀不飽和化合物加成聚合或開環移位聚合後進行氫化而製造。 所述通式(III)中,R5 及R6 較佳為氫原子或甲基,X3 及Y3 較佳為氫原子,可適當選擇其他基。該降冰片烯系聚合物由JSR(股)以亞頓(Arton)G或亞頓(Arton)F的商品名進行銷售,且由日本瑞翁(ZEON)以瑞諾(Zeonor)ZF14、ZF16、瑞諾斯(Zeonex)250、瑞諾斯(Zeonex)280、瑞諾斯(Zeonex)480R的商品名進行市售,亦可使用該些。The hydride of the norbornene-based polymer can be as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. As disclosed in Japanese Laid-Open Patent Publication No. 2003-1159767 or Japanese Patent Application Publication No. 2004-309979, the hydrogenation is carried out by addition polymerization or ring-opening shift polymerization of a polycyclic unsaturated compound. Manufacturing. In the above formula (III), R 5 and R 6 are preferably a hydrogen atom or a methyl group, and X 3 and Y 3 are preferably a hydrogen atom, and other groups can be appropriately selected. The norbornene-based polymer is sold by JSR (share) under the trade name of Arton G or Arton F, and by Zeonor ZF14, ZF16, by ZEON, Japan. The trade names of Zeonex 250, Zeonex 280, and Zeonex 480R are commercially available and can be used.
環烯烴系聚合物的利用凝膠滲透層析法(GPC)所得的聚苯乙烯換算的重量平均分子量較佳為10,000~1,000,000,較佳為50,000~500,000,更佳為100,000~300,000。 另外,作為本發明中所使用的環烯烴系聚合物,亦可例示日本專利特開2013-241568號公報的段落0039~段落0052所記載的環烯烴系聚合物,該些內容被併入至本說明書中。The polystyrene-equivalent weight average molecular weight obtained by gel permeation chromatography (GPC) of the cycloolefin polymer is preferably 10,000 to 1,000,000, preferably 50,000 to 500,000, more preferably 100,000 to 300,000. In addition, as the cycloolefin polymer to be used in the present invention, a cycloolefin polymer described in paragraph 0039 to paragraph 0052 of JP-A-2013-241568 may be exemplified, and the contents are incorporated herein. In the manual.
<<<丙烯酸樹脂>>> 本發明中的丙烯酸樹脂為對(甲基)丙烯酸酯單體進行聚合而獲得的樹脂。 作為(甲基)丙烯酸酯單體,可例示:(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸甲酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸己酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸正癸酯、(甲基)丙烯酸異癸酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸異冰片酯、(甲基)丙烯酸環己酯、甲基(丙烯酸)苯基酯、甲基(丙烯酸)苄基酯、及(甲基)丙烯酸2-甲基丁酯。 另外,亦可於不超出本發明的主旨的範圍內,對其他單體進行共聚。於對其他單體進行共聚的情況下,較佳為所有單體的10莫耳%以下。<<<Acrylic Resin>>> The acrylic resin in the present invention is a resin obtained by polymerizing a (meth) acrylate monomer. Examples of the (meth) acrylate monomer include 2-ethylhexyl (meth)acrylate, ethyl (meth)acrylate, methyl (meth)acrylate, and n-propyl (meth)acrylate. Isopropyl (meth)acrylate, amyl (meth)acrylate, n-octyl (meth)acrylate, isooctyl (meth)acrylate, isodecyl (meth)acrylate, (meth)acrylic acid Butyl ester, isobutyl (meth)acrylate, hexyl (meth)acrylate, n-decyl (meth)acrylate, isoamyl (meth)acrylate, n-decyl (meth)acrylate, (methyl) Isodecyl acrylate, dodecyl (meth)acrylate, isobornyl (meth)acrylate, cyclohexyl (meth)acrylate, phenyl (meth)acrylate, methyl (acrylic acid) benzyl A base ester and 2-methylbutyl (meth)acrylate. Further, other monomers may be copolymerized within a range not exceeding the gist of the invention. In the case of copolymerizing other monomers, it is preferably 10 mol% or less of all the monomers.
另外,本發明中亦較佳為於側鏈具有有機聚矽氧烷的丙烯酸樹脂。作為於側鏈具有有機聚矽氧烷的樹脂,可列舉下述式(3)所表示者。 式(3) [化3]所述式(3)中,R1 於具有多個的情況下,可相同亦可不同,表示CH3 、C2 H5 、CH3 (CH2 )2 或CH3 (CH2 )3 。R2 於具有多個的情況下,可相同亦可不同,表示H、CH3 、C2 H5 、CH3 (CH2 )2 或CH3 (CH2 )3 。R3 於具有多個的情況下,可相同亦可不同,表示H或CH3 。R4 於具有多個的情況下,可相同亦可不同,表示H、CH3 、C2 H5 、CH3 (CH2 )2 、CH3 (CH2 )3 、或經選自由環氧基、羥基、羧基、胺基、烷氧基、乙烯基、矽烷醇基及異氰酸酯基所組成的群組中的至少一種官能基取代的碳數1~6的烷基。 a為50~150,b為50~150,c為80~600。另外,m為1~10。 作為於側鏈具有有機聚矽氧烷的丙烯酸樹脂的具體例,可列舉:信越化學工業(股)製造的矽酮接枝丙烯酸樹脂,商品名:X-24-798A、X-22-8004(R4 :C2 H4 OH,官能基當量:3250(g/mol))、X-22-8009(R4 :含有Si(OCH3 )3 的烷基,官能基當量:6200(g/mol))、X-22-8053(R4 :H,官能基當量:900(g/mol))、X-22-8084、X-22-8084EM、X-22-8195(R4 :H,官能基當量:2700(g/mol));東亞合成(股)製造的塞瑪庫(Symac)系列(US-270、US-350、US-352、US-380、US-413、US-450等)、萊則特(rezeta)GS-1000系列(GS-1015、GS-1302等)等。 另外,除所述以外,可例示三菱麗陽(股)製造的壓克培特(acrypet)MF 001等。Further, in the present invention, an acrylic resin having an organic polyoxyalkylene in a side chain is also preferred. The resin which has an organopolysiloxane in a side chain is represented by the following formula (3). Formula (3) [Chemical 3] In the formula (3), when R 1 is plural, it may be the same or different, and represents CH 3 , C 2 H 5 , CH 3 (CH 2 ) 2 or CH 3 (CH 2 ) 3 . When R 2 has a plurality of, it may be the same or different and represents H, CH 3 , C 2 H 5 , CH 3 (CH 2 ) 2 or CH 3 (CH 2 ) 3 . When R 3 has a plurality of, it may be the same or different and represents H or CH 3 . When R 4 has a plurality of, it may be the same or different, and represents H, CH 3 , C 2 H 5 , CH 3 (CH 2 ) 2 , CH 3 (CH 2 ) 3 , or selected from an epoxy group. A C 1-6 alkyl group substituted with at least one functional group in the group consisting of a hydroxyl group, a carboxyl group, an amine group, an alkoxy group, a vinyl group, a stanol group, and an isocyanate group. a is 50 to 150, b is 50 to 150, and c is 80 to 600. In addition, m is 1 to 10. Specific examples of the acrylic resin having an organic polysiloxane in the side chain include an anthrone-grafted acrylic resin manufactured by Shin-Etsu Chemical Co., Ltd., trade names: X-24-798A, X-22-8004 ( R 4 : C 2 H 4 OH, functional group equivalent: 3250 (g/mol)), X-22-8009 (R 4 : alkyl group containing Si(OCH 3 ) 3 , functional group equivalent: 6200 (g/mol) )), X-22-8053 (R 4 : H, functional group equivalent: 900 (g/mol)), X-22-8084, X-22-8084EM, X-22-8195 (R 4 : H, functional Base equivalent: 2700 (g/mol)); Symac series (US-270, US-350, US-352, US-380, US-413, US-450, etc.) manufactured by East Asia Synthetic Co., Ltd. ), Rezeta GS-1000 series (GS-1015, GS-1302, etc.). Further, in addition to the above, an acrypet MF 001 manufactured by Mitsubishi Rayon Co., Ltd., or the like can be exemplified.
本發明中使用的暫時接著劑組成物較佳為固體成分的50質量%~100質量%為樹脂,更佳為70質量%~100質量%為樹脂。 本發明中使用的暫時接著劑組成物可僅包含一種樹脂,亦可包含兩種以上。於包含兩種以上的情況下,較佳為合計量為所述範圍。The temporary adhesive composition used in the present invention is preferably a resin of 50% by mass to 100% by mass of the solid content, more preferably 70% by mass to 100% by mass of the resin. The temporary adhesive composition used in the present invention may contain only one type of resin, or may contain two or more types. In the case where two or more types are contained, it is preferred that the total amount is the above range.
<<溶劑>> 本發明中使用的暫時接著劑組成物較佳為含有溶劑。於藉由塗佈本發明中使用的暫時接著劑組成物來形成暫時接著劑層的情況下,較佳為調配溶劑。溶劑可不受限制地使用公知者,較佳為有機溶劑。 作為有機溶劑,可較佳地列舉:乙酸乙酯、乙酸-正丁酯、乙酸異丁酯、甲酸戊酯、乙酸異戊酯、乙酸異丁酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、烷基氧基乙酸烷基酯(例如:烷基氧基乙酸甲酯、烷基氧基乙酸乙酯、烷基氧基乙酸丁酯(例如甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-烷基氧基丙酸烷基酯類(例如:3-烷基氧基丙酸甲酯、3-烷基氧基丙酸乙酯等(例如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-烷基氧基丙酸烷基酯類(例如:2-烷基氧基丙酸甲酯、2-烷基氧基丙酸乙酯、2-烷基氧基丙酸丙酯等(例如2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-烷基氧基-2-甲基丙酸甲酯及2-烷基氧基-2-甲基丙酸乙酯(例如2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁酸甲酯、2-氧代丁酸乙酯、1-甲氧基-2-丙基乙酸酯等酯類; 二乙二醇二甲醚、四氫呋喃、乙二醇單甲醚、乙二醇單乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯等醚類; 甲基乙基酮、環己酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮、γ-丁內酯等酮類; 甲苯、二甲苯、苯甲醚、均三甲苯、乙基苯、丙基苯、枯烯、正丁基苯、第二丁基苯、異丁基苯、第三丁基苯、戊基苯、異戊基苯、(2,2-二甲基丙基)苯、1-苯基己烷、1-苯基庚烷、1-苯基辛烷、1-苯基壬烷、1-苯基癸烷、環丙基苯、環己基苯、2-乙基甲苯、1,2-二乙基苯、鄰-異丙基甲苯、茚滿、1,2,3,4-四氫萘、3-乙基甲苯、間-異丙基甲苯、1,3-二異丙基苯、4-乙基甲苯、1,4-二乙基苯、對-異丙基甲苯、1,4-二異丙基苯、4-第三丁基甲苯、1,4-二-第三丁基苯、1,3-二乙基苯、1,2,3-三甲基苯、1,2,4-三甲基苯、4-第三丁基-鄰二甲苯、1,2,4-三乙基苯、1,3,5-三乙基苯、1,3,5-三異丙基苯、5-第三丁基-間二甲苯、3,5-二-第三丁基甲苯、1,2,3,5-四甲基苯、1,2,4,5-四甲基苯、五甲基苯等芳香族烴類; 檸檬烯、對薄荷烷、壬烷、癸烷、十二烷、十氫萘等烴類等。 該些中較佳為均三甲苯、第三丁基苯、1,2,4-三甲基苯、對薄荷烷、γ-丁內酯、苯甲醚、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯,更佳為均三甲苯。<<Solvent>> The temporary adhesive composition used in the present invention preferably contains a solvent. In the case where the temporary adhesive layer is formed by applying the temporary adhesive composition used in the present invention, it is preferred to formulate a solvent. The solvent can be used without any limitation, and is preferably an organic solvent. The organic solvent may preferably be exemplified by ethyl acetate, n-butyl acetate, isobutyl acetate, amyl acetate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, Ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, alkyl alkyl oxyacetate (eg methyl alkyl oxyacetate, ethyl alkyl oxyacetate, alkyl oxy acetic acid) Butyl ester (such as methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.), 3-alkyloxypropionic acid Alkyl esters (for example: methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate, etc. (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate) , methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), alkyl 2-alkyloxypropionate (for example: methyl 2-alkyloxypropionate, Ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate, etc. (for example, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, 2-methoxypropene) Acid propyl ester, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate), 2-alkane Methyl oxy-2-methylpropanoate and ethyl 2-alkyloxy-2-methylpropanoate (eg methyl 2-methoxy-2-methylpropanoate, 2-ethoxy-) Ethyl 2-methylpropionate, etc.), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetate, ethyl acetate, methyl 2-oxobutanoate, 2-oxo Ethyl butyrate, 1-methoxy-2-propyl acetate, etc.; diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl fibril Acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, An ether such as propylene glycol monoethyl ether acetate or propylene glycol monopropyl ether acetate; methyl ethyl ketone, cyclohexanone, 2-heptanone, 3-heptanone, N-methyl-2-pyrrolidone, γ Ketones such as butyrolactone; toluene, xylene, anisole, mesitylene, ethylbenzene, propylbenzene, cumene, n-butylbenzene, second butylbenzene, isobutylbenzene, third Butylbenzene, pentylbenzene, isoamylbenzene, (2,2-dimethylpropyl)benzene, 1-phenylhexane, 1-phenylheptane 1-phenyloctane, 1-phenyldecane, 1-phenyldecane, cyclopropylbenzene, cyclohexylbenzene, 2-ethyltoluene, 1,2-diethylbenzene, o-isopropyl Toluene, indane, 1,2,3,4-tetrahydronaphthalene, 3-ethyltoluene, m-isopropyltoluene, 1,3-diisopropylbenzene, 4-ethyltoluene, 1,4- Diethylbenzene, p-isopropyltoluene, 1,4-diisopropylbenzene, 4-tert-butyltoluene, 1,4-di-tert-butylbenzene, 1,3-diethylbenzene 1,2,3-trimethylbenzene, 1,2,4-trimethylbenzene, 4-tert-butyl-o-xylene, 1,2,4-triethylbenzene, 1,3,5 Triethylbenzene, 1,3,5-triisopropylbenzene, 5-tert-butyl-m-xylene, 3,5-di-t-butyltoluene, 1,2,3,5-tetra Aromatic hydrocarbons such as methylbenzene, 1,2,4,5-tetramethylbenzene, pentamethylbenzene; hydrocarbons such as limonene, p-menthane, decane, decane, dodecane, decahydronaphthalene, etc. . Preferred among these are mesitylene, tert-butylbenzene, 1,2,4-trimethylbenzene, p-menthane, γ-butyrolactone, anisole, and methyl 3-ethoxypropionate. , 3-ethoxypropionate ethyl ester, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone And cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate, more preferably mesitylene.
就改良塗佈表面性狀等觀點而言,該些溶劑亦較佳為混合兩種以上的形態。於該情況下,特佳為如下的混合溶液,其包含選自均三甲苯、第三丁基苯、1,2,4-三甲基苯、對薄荷烷、γ-丁內酯、苯甲醚、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲醚、乙酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲醚、及丙二醇甲醚乙酸酯中的兩種以上。From the viewpoint of improving the surface properties of the coating, etc., it is preferred that the solvents are mixed in two or more forms. In this case, a mixed solution selected from the group consisting of mesitylene, tert-butylbenzene, 1,2,4-trimethylbenzene, p-menthane, γ-butyrolactone, and benzoic acid is particularly preferred. Ether, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, 3-methyl Two or more of methyl oxypropionate, 2-heptanone, cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether, and propylene glycol methyl ether acetate .
暫時接著劑組成物中所含的溶劑的於1013.25 hPa中的沸點較佳為110℃~250℃,更佳為140℃~190℃。藉由使用此種溶劑,可獲得面內均勻性更優異的暫時接著劑。於使用兩種以上的溶劑的情況下,將具有沸點最高的溶劑的沸點設為所述沸點。The boiling point of the solvent contained in the temporary adhesive composition in 1013.25 hPa is preferably from 110 ° C to 250 ° C, more preferably from 140 ° C to 190 ° C. By using such a solvent, a temporary adhesive which is more excellent in in-plane uniformity can be obtained. In the case where two or more solvents are used, the boiling point of the solvent having the highest boiling point is defined as the boiling point.
於暫時接著劑組成物具有溶劑的情況下,就塗佈性的觀點而言,暫時接著劑組成物的溶劑的含量較佳為暫時接著劑組成物的總固體成分濃度成為5質量%~80質量%的量,進而更佳為10質量%~50質量%,特佳為15質量%~40質量%。 溶劑可僅為一種,亦可為兩種以上。於溶劑為兩種以上的情況下,較佳為其合計為所述範圍。 暫時接著劑中的溶劑含有率較佳為1質量%以下,更佳為0.1質量%以下,特佳為不含。When the temporary adhesive composition has a solvent, the content of the solvent of the temporary adhesive composition is preferably from 5% by mass to 80% by mass of the total solid content of the temporary adhesive composition from the viewpoint of coatability. The amount of % is more preferably 10% by mass to 50% by mass, particularly preferably 15% by mass to 40% by mass. The solvent may be used alone or in combination of two or more. When the solvent is two or more, it is preferred that the total is in the above range. The solvent content in the temporary adhesive is preferably 1% by mass or less, more preferably 0.1% by mass or less, and particularly preferably not contained.
<<含有氟原子及矽原子中的至少一者的化合物>> 本發明中使用的暫時接著劑組成物較佳為包含含有氟原子及矽原子中的至少一者的化合物。藉由調配此種成分,載體基板與加工基板的剝離變得更容易。進而,關於含有氟原子及矽原子中的至少一者的化合物,由於矽原子或氟原子容易偏向存在於暫時接著劑層的表層附近,因此即便該些化合物的量相對於暫時接著劑組成物的樹脂等而言較少,亦可形成對加工基板或載體基板的剝離性優異的暫時接著劑。<<Compound containing at least one of a fluorine atom and a ruthenium atom>> The temporary adhesive composition used in the present invention preferably contains a compound containing at least one of a fluorine atom and a ruthenium atom. By blending such a component, peeling of the carrier substrate and the processed substrate becomes easier. Further, in the compound containing at least one of a fluorine atom and a ruthenium atom, since the ruthenium atom or the fluorine atom is likely to be present in the vicinity of the surface layer of the temporary adhesive layer, the amount of the compound is relative to the temporary adhesive composition. A resin or the like is small, and a temporary adhesive agent excellent in peelability to a processed substrate or a carrier substrate can be formed.
<<<具有氟原子的化合物>>> 本發明中使用的暫時接著劑組成物較佳為包含具有氟原子的化合物。<<<Compound having a fluorine atom>>> The temporary adhesive composition used in the present invention preferably contains a compound having a fluorine atom.
作為具有氟原子的化合物的實施形態,可例示液體狀的化合物。所謂液體狀為於25℃下具有流動性的化合物,例如是指25℃下的黏度為1 mPa·s~100,000 mPa·s的化合物。 具有氟原子的化合物的25℃下的黏度例如更佳為10 mPa·s~20,000 mPa·s,尤佳為100 mPa·s~15,000 mPa·s。若具有氟原子的化合物的黏度為所述範圍,則具有氟原子的化合物容易偏向存在於暫時接著劑的表面。As an embodiment of the compound having a fluorine atom, a liquid compound can be exemplified. The liquid is a compound having fluidity at 25 ° C, and is, for example, a compound having a viscosity at 25 ° C of 1 mPa·s to 100,000 mPa·s. The viscosity at 25 ° C of the compound having a fluorine atom is, for example, more preferably 10 mPa·s to 20,000 mPa·s, still more preferably 100 mPa·s to 15,000 mPa·s. When the viscosity of the compound having a fluorine atom is in the above range, the compound having a fluorine atom tends to be biased toward the surface of the temporary adhesive.
於本發明中,具有氟原子的化合物可較佳地使用單體、寡聚物、聚合物的任一形態的化合物。另外,亦可為寡聚物與聚合物的混合物。另外,亦可為寡聚物及/或聚合物與單體的混合物。 就耐熱性等觀點而言,具有氟原子的化合物較佳為寡聚物、聚合物及該些的混合物。 作為寡聚物、聚合物,例如可列舉自由基聚合物、陽離子聚合物、陰離子聚合物等,可較佳地使用任一種。其中,特佳為(甲基)丙烯酸聚合物。藉由使用(甲基)丙烯酸聚合物的具有氟原子的化合物,可期待具有氟原子的化合物容易於暫時接著劑的表面達成偏向存在化從而剝離性優異的效果。 再者,於本發明中,所謂寡聚物,定義為重量平均分子量為500以上且小於2000的化合物。另外,所謂聚合物,定義為重量平均分子量為2000以上的化合物。 具有氟原子的化合物的重量平均分子量較佳為500~100000,更佳為1000~50000,進而更佳為2000~20000。In the present invention, a compound having a fluorine atom or a compound of any form of a monomer, an oligomer or a polymer can be preferably used. Alternatively, it may be a mixture of an oligomer and a polymer. Alternatively, it may be a mixture of oligomers and/or polymers and monomers. From the viewpoint of heat resistance and the like, the compound having a fluorine atom is preferably an oligomer, a polymer, and a mixture thereof. Examples of the oligomer and the polymer include a radical polymer, a cationic polymer, an anionic polymer, and the like, and any of them can be preferably used. Among them, a (meth)acrylic polymer is particularly preferred. By using a compound having a fluorine atom of a (meth)acrylic polymer, it is expected that a compound having a fluorine atom is likely to be biased toward the surface of the temporary adhesive to have an excellent peeling property. Further, in the present invention, the oligomer is defined as a compound having a weight average molecular weight of 500 or more and less than 2,000. Further, the polymer is defined as a compound having a weight average molecular weight of 2,000 or more. The weight average molecular weight of the compound having a fluorine atom is preferably from 500 to 100,000, more preferably from 1,000 to 50,000, still more preferably from 2,000 to 20,000.
於本發明中,具有氟原子的化合物較佳為當對供於暫時接著的基板進行處理時不會改質的化合物。例如,較佳為即便於250℃以上進行加熱或利用各種化學藥液對基板進行處理後亦可以液體狀的形態存在的化合物。作為具體的一例,於自25℃的狀態以10℃/min的昇溫條件加熱至250℃後,冷卻至25℃後的25℃下的黏度較佳為1 mPa·s~100,000 mPa·s,更佳為10 mPa·s~20,000 mPa·s,尤佳為100 mPa·s~15,000 mPa·s。 作為具有此種特性的具有氟原子的液體狀化合物,較佳為不具有反應性基的非熱硬化性化合物。此處所述的反應性基是指藉由250℃的加熱而反應的基的全體,可列舉聚合性基、水解性基等。具體而言,例如可列舉:(甲基)丙烯酸基、環氧基、異氰酸基等。 作為非熱硬化性化合物,可較佳地使用包含一種或兩種以上的含氟單官能單體的聚合物。更具體而言,可列舉選自如下聚合物中的至少一種的含氟樹脂等:選自四氟乙烯、六氟丙烯、四氟環氧乙烷、六氟環氧丙烷、全氟烷基乙烯基醚、氯三氟乙烯、偏二氟乙烯、含有全氟烷基的(甲基)丙烯酸酯中的一種或兩種以上的含氟單官能單體的均聚物或該些單體的共聚物、含氟單官能單體的一種或兩種以上與乙烯的共聚物、含氟單官能單體的一種或兩種以上與氯三氟乙烯的共聚物。In the present invention, the compound having a fluorine atom is preferably a compound which does not undergo modification when the substrate for temporary storage is treated. For example, it is preferably a compound which can be present in a liquid form even after heating at 250 ° C or higher or treating the substrate with various chemical solutions. As a specific example, after heating to 250 ° C under the temperature rising condition of 10 ° C / min from the state of 25 ° C, the viscosity at 25 ° C after cooling to 25 ° C is preferably from 1 mPa·s to 100,000 mPa·s. It is preferably from 10 mPa·s to 20,000 mPa·s, particularly preferably from 100 mPa·s to 15,000 mPa·s. As the liquid compound having a fluorine atom having such characteristics, a non-thermosetting compound having no reactive group is preferable. The reactive group as used herein refers to the entire group of the reaction which is reacted by heating at 250 ° C, and examples thereof include a polymerizable group and a hydrolyzable group. Specific examples thereof include a (meth)acryl group, an epoxy group, and an isocyanate group. As the non-thermosetting compound, a polymer containing one or two or more kinds of fluorine-containing monofunctional monomers can be preferably used. More specifically, a fluorine-containing resin or the like selected from at least one of the following polymers selected from the group consisting of tetrafluoroethylene, hexafluoropropylene, tetrafluoroethylene oxide, hexafluoropropylene oxide, and perfluoroalkylethylene may be mentioned. Homopolymer of one or two or more fluorine-containing monofunctional monomers of a vinyl ether, chlorotrifluoroethylene, vinylidene fluoride, a perfluoroalkyl group-containing (meth) acrylate or copolymerization of the monomers A copolymer of one or two or more copolymers of fluorine, a fluorine-containing monofunctional monomer and ethylene, or one or more of fluorine-containing monofunctional monomers and chlorotrifluoroethylene.
作為非熱硬化性化合物,較佳為可由含有全氟烷基的(甲基)丙烯酸酯合成的含有全氟烷基的(甲基)丙烯酸共聚物。The non-thermosetting compound is preferably a perfluoroalkyl-containing (meth)acrylic copolymer which can be synthesized from a (meth) acrylate containing a perfluoroalkyl group.
就剝離性的觀點而言,除含有全氟烷基的(甲基)丙烯酸酯以外,含有全氟烷基的(甲基)丙烯酸共聚物亦可任意選擇共聚成分。作為可形成共聚成分的自由基聚合性化合物,例如可列舉選自丙烯酸酯類、甲基丙烯酸酯類、N,N-2取代丙烯醯胺類、N,N-2取代甲基丙烯醯胺類、苯乙烯類、丙烯腈類、甲基丙烯腈類等中的自由基聚合性化合物。From the viewpoint of the releasability, in addition to the (meth) acrylate containing a perfluoroalkyl group, the (meth)acrylic copolymer containing a perfluoroalkyl group may optionally be a copolymerization component. Examples of the radically polymerizable compound capable of forming a copolymerization component include acrylates, methacrylates, N,N-2 substituted acrylamides, and N,N-2 substituted methacrylamides. A radically polymerizable compound in styrene, acrylonitrile, methacrylonitrile or the like.
更具體而言,例如可列舉:丙烯酸烷基酯(較佳為烷基的碳原子數為1~20者)等丙烯酸酯類(例如丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸丁酯、丙烯酸戊酯、丙烯酸乙基己酯、丙烯酸辛酯、丙烯酸第三辛酯、丙烯酸氯乙酯、丙烯酸-2,2-二甲基羥基丙酯、丙烯酸-5-羥基戊酯、三羥甲基丙烷單丙烯酸酯、季戊四醇單丙烯酸酯、丙烯酸縮水甘油酯、丙烯酸苄基酯、丙烯酸甲氧基苄基酯、丙烯酸糠基酯、丙烯酸四氫糠基酯等);丙烯酸芳基酯(例如丙烯酸苯基酯等);甲基丙烯酸烷基酯(較佳為烷基的碳原子數為1~20者)等甲基丙烯酸酯類(例如甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸異丙酯、甲基丙烯酸戊酯、甲基丙烯酸己酯、甲基丙烯酸環己酯、甲基丙烯酸苄基酯、甲基丙烯酸氯苄基酯、甲基丙烯酸辛酯、甲基丙烯酸-4-羥基丁酯、甲基丙烯酸-5-羥基戊酯、甲基丙烯酸-2,2-二甲基-3-羥基丙酯、三羥甲基丙烷單甲基丙烯酸酯、季戊四醇單甲基丙烯酸酯、甲基丙烯酸縮水甘油酯、甲基丙烯酸糠基酯、甲基丙烯酸四氫糠基酯等);甲基丙烯酸芳基酯(例如甲基丙烯酸苯基酯、甲基丙烯酸甲苯酚基酯、甲基丙烯酸萘基酯等);苯乙烯,烷基苯乙烯等苯乙烯(例如甲基苯乙烯、二甲基苯乙烯、三甲基苯乙烯、乙基苯乙烯、二乙基苯乙烯、異丙基苯乙烯、丁基苯乙烯、己基苯乙烯、環己基苯乙烯、癸基苯乙基、苄基苯乙烯、氯甲基苯乙烯、三氟甲基苯乙烯、乙氧基甲基苯乙烯、乙醯氧基甲基苯乙烯等),烷氧基苯乙烯(例如甲氧基苯乙烯、4-甲氧基-3-甲基苯乙烯、二甲氧基苯乙烯等),鹵化苯乙烯(例如氯苯乙烯、二氯苯乙烯、三氯苯乙烯、四氯苯乙烯、五氯苯乙烯、溴苯乙烯、二溴苯乙烯、碘苯乙烯、氟苯乙烯、三氟苯乙烯、2-溴-4-三氟甲基苯乙烯、4-氟-3-三氟甲基苯乙烯等);丙烯腈;含有羧酸的自由基聚合性化合物(丙烯酸、甲基丙烯酸、衣康酸、丁烯酸、異丁烯酸、順丁烯二酸、對羧基苯乙烯及該些的酸基的金屬鹽、銨鹽化合物等)。就剝離性的觀點而言,特佳為具有碳數1~24的烴基的(甲基)丙烯酸酯,例如可列舉(甲基)丙烯酸的甲酯、丁酯、2-乙基己酯、月桂基酯、硬脂基酯、縮水甘油酯等,較佳為2-乙基己基、月桂基、硬脂基等高級醇的(甲基)丙烯酸酯,特佳為丙烯酸酯。More specifically, for example, an acrylate such as an alkyl acrylate (preferably having an alkyl group having 1 to 20 carbon atoms) (for example, methyl acrylate, ethyl acrylate, propyl acrylate or butyl acrylate) , amyl acrylate, ethylhexyl acrylate, octyl acrylate, trioctyl acrylate, chloroethyl acrylate, 2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate, trishydroxyl Propane monoacrylate, pentaerythritol monoacrylate, glycidyl acrylate, benzyl acrylate, methoxybenzyl acrylate, decyl acrylate, tetrahydrofurfuryl acrylate, etc.; aryl acrylate (eg acrylic acid) a methacrylate such as a phenyl ester or the like; an alkyl methacrylate (preferably having an alkyl group having 1 to 20 carbon atoms) (for example, methyl methacrylate, ethyl methacrylate, methyl group) Propyl acrylate, isopropyl methacrylate, amyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, chlorobenzyl methacrylate, octyl methacrylate Methacrylic acid-4 -hydroxybutyl ester, 5-hydroxypentyl methacrylate, 2,2-dimethyl-3-hydroxypropyl methacrylate, trimethylolpropane monomethacrylate, pentaerythritol monomethacrylate , glycidyl methacrylate, decyl methacrylate, tetrahydrofurfuryl methacrylate, etc.; aryl methacrylate (eg phenyl methacrylate, cresyl methacrylate, A) Nylyl acrylate, etc.; styrene, alkylstyrene, etc. (such as methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, diethyl styrene, isopropyl Styrene, butyl styrene, hexyl styrene, cyclohexyl styrene, mercaptophenethyl, benzyl styrene, chloromethyl styrene, trifluoromethyl styrene, ethoxymethyl styrene, Ethyloxymethylstyrene, etc., alkoxystyrene (such as methoxystyrene, 4-methoxy-3-methylstyrene, dimethoxystyrene, etc.), halogenated styrene ( For example, chlorostyrene, dichlorostyrene, trichlorostyrene, tetrachlorostyrene, pentachlorostyrene, bromophenyl , dibromostyrene, iodine styrene, fluorostyrene, trifluorostyrene, 2-bromo-4-trifluoromethylstyrene, 4-fluoro-3-trifluoromethylstyrene, etc.; acrylonitrile; A radically polymerizable compound containing a carboxylic acid (acrylic acid, methacrylic acid, itaconic acid, crotonic acid, methacrylic acid, maleic acid, p-carboxystyrene, and a metal salt or an ammonium salt compound of the acid group) Wait). From the viewpoint of the releasability, a (meth) acrylate having a hydrocarbon group having 1 to 24 carbon atoms is particularly preferable, and examples thereof include methyl ester, butyl ester, 2-ethylhexyl ester of (meth)acrylic acid, and laurel. The base ester, stearyl ester, glycidyl ester or the like is preferably a (meth) acrylate of a higher alcohol such as 2-ethylhexyl, lauryl or stearyl, and particularly preferably an acrylate.
於本發明中,具有氟原子的化合物自25℃以20℃/min昇溫的10%熱質量減少溫度較佳為250℃以上,更佳為280℃以上。另外,上限值並無特別限定,例如較佳為1000℃以下,更佳為800℃以下。根據該態樣,容易形成耐熱性優異的暫時接著用積層體。再者,所謂10%熱質量減少溫度,是指利用熱重量測定裝置於氮氣流下以所述昇溫條件進行測定而可見測定前的重量減少了10%的溫度。In the present invention, the 10% thermal mass reduction temperature at which the compound having a fluorine atom is heated at 25 ° C/min at 25 ° C is preferably 250 ° C or higher, more preferably 280 ° C or higher. Further, the upper limit is not particularly limited, and is, for example, preferably 1000 ° C or lower, more preferably 800 ° C or lower. According to this aspect, it is easy to form a laminate for temporary use which is excellent in heat resistance. In addition, the 10% thermal mass reduction temperature means that the temperature before the measurement is reduced by 10% by measurement under the nitrogen gas flow rate under a nitrogen gas flow rate.
於本發明中,具有氟原子的化合物較佳為含有親油基的化合物。作為親油基,可列舉烷基、芳香族基等。In the present invention, the compound having a fluorine atom is preferably a compound containing a lipophilic group. Examples of the lipophilic group include an alkyl group and an aromatic group.
烷基可列舉直鏈烷基、分支烷基、環狀烷基。 直鏈烷基的碳數較佳為2~30,更佳為4~30,進而更佳為6~30,特佳為12~20。 分支烷基的碳數較佳為3~30,更佳為4~30,進而更佳為6~30,特佳為12~20。 環狀烷基可為單環,亦可為多環。環狀烷基的碳數較佳為3~30,更佳為4~30,進而更佳為6~30,最佳為12~20。 作為直鏈烷基或分支烷基的具體例,例如可列舉:甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十四烷基、十八烷基、異丙基、異丁基、第二丁基、第三丁基、1-乙基戊基、2-乙基己基。 作為環狀烷基的具體例,例如可列舉:環丙基、環丁基、環戊基、環己基、環庚基及環辛基、金剛烷基、降冰片基、冰片基、莰烯基、十氫萘基、三環癸烷基、四環癸烷基、莰二醯基、二環己基、蒎烯基。 烷基可具有取代基。作為取代基,可列舉:鹵素原子、烷氧基、芳香族基等。 作為鹵素原子,可列舉氯原子、氟原子、溴原子、碘原子等,較佳為氟原子。 烷氧基的碳數較佳為1~30,更佳為1~20,進而更佳為1~10。烷氧基較佳為直鏈烷氧基或分支烷氧基。The alkyl group may, for example, be a linear alkyl group, a branched alkyl group or a cyclic alkyl group. The carbon number of the linear alkyl group is preferably from 2 to 30, more preferably from 4 to 30, still more preferably from 6 to 30, particularly preferably from 12 to 20. The number of carbon atoms of the branched alkyl group is preferably from 3 to 30, more preferably from 4 to 30, still more preferably from 6 to 30, particularly preferably from 12 to 20. The cyclic alkyl group may be a single ring or a polycyclic ring. The number of carbon atoms of the cyclic alkyl group is preferably from 3 to 30, more preferably from 4 to 30, still more preferably from 6 to 30, most preferably from 12 to 20. Specific examples of the linear alkyl group or the branched alkyl group include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, and a dodecyl group. , tetradecyl, octadecyl, isopropyl, isobutyl, t-butyl, tert-butyl, 1-ethylpentyl, 2-ethylhexyl. Specific examples of the cyclic alkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, an adamantyl group, a norbornyl group, a borneyl group, and a nonenyl group. , decahydronaphthyl, tricyclodecyl, tetracyclodecyl, indenyl, dicyclohexyl, nonenyl. The alkyl group may have a substituent. Examples of the substituent include a halogen atom, an alkoxy group, and an aromatic group. The halogen atom may, for example, be a chlorine atom, a fluorine atom, a bromine atom or an iodine atom, and is preferably a fluorine atom. The alkoxy group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, still more preferably 1 to 10 carbon atoms. The alkoxy group is preferably a linear alkoxy group or a branched alkoxy group.
芳香族基可為單環,亦可為多環。芳香族基的碳數較佳為6~20,更佳為6~14,最佳為6~10。芳香族基較佳為於構成環的元素中不含雜原子(例如氮原子、氧原子、硫原子等)。作為芳香族環的具體例,可列舉:苯環、萘環、戊搭烯環、茚環、薁環、庚搭烯環、苯并二茚環、苝環、稠五苯環、苊環、菲環、蒽環、稠四苯環、環、聯伸三苯環、茀環、聯苯環、吡咯環、呋喃環、噻吩環、咪唑環、噁唑環、噻唑環、吡啶環、吡嗪環、嘧啶環、噠嗪環、吲哚嗪環、吲哚環、苯并呋喃環、苯并噻吩環、異苯并呋喃環、喹嗪環、喹啉環、酞嗪環、萘啶環、喹噁啉環、喹唑啉環、異喹啉環、咔唑環、啡啶環、吖啶環、啡啉環、噻蒽環、苯并哌喃環、氧雜蒽環、啡噁噻環、啡噻嗪環及啡嗪環。 芳香族基可具有所述取代基。The aromatic group may be a single ring or a polycyclic ring. The carbon number of the aromatic group is preferably from 6 to 20, more preferably from 6 to 14, most preferably from 6 to 10. The aromatic group preferably has no hetero atom (for example, a nitrogen atom, an oxygen atom, a sulfur atom or the like) in the element constituting the ring. Specific examples of the aromatic ring include a benzene ring, a naphthalene ring, a pentylene ring, an anthracene ring, an anthracene ring, a heptene ring, a benzodioxan ring, an anthracene ring, a fused pentabenzene ring, an anthracene ring, and Philippine ring, anthracene ring, thick tetraphenyl ring, Ring, extended triphenyl ring, anthracene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine ring, pyrimidine ring, pyridazine ring, pyridazine Ring, anthracene ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinolizine ring, quinoline ring, pyridazine ring, naphthyridine ring, quinoxaline ring, quinazoline ring, isoquine A porphin ring, an oxazole ring, a phenazin ring, an acridine ring, a phenanthroline ring, a thioindole ring, a benzopyran ring, a xanthene ring, a morphine ring, a phenothiazine ring, and a phenazine ring. The aromatic group may have the substituent.
具有氟原子的化合物可為僅含有一種親油基的化合物,亦可含有兩種以上。另外,親油基亦可含有氟原子。即,具有氟原子的化合物可為僅親油基含有氟原子的化合物。另外,亦可為除了親油基以外進而含有具有氟元素的基(亦稱為含氟基)的化合物。較佳為含有親油基與含氟基的化合物。 於具有氟原子的化合物為含有親油基與含氟基的化合物的情況下,親油基可含有氟原子,亦可不含氟原子,較佳為親油基不含氟原子。 具有氟原子的化合物於一分子中具有一個以上的親油基,較佳為具有2個~100個,特佳為具有6個~80個。The compound having a fluorine atom may be a compound containing only one lipophilic group, or may contain two or more kinds. Further, the lipophilic group may also contain a fluorine atom. That is, the compound having a fluorine atom may be a compound containing only a fluorine atom in a lipophilic group. Further, it may be a compound containing a group having a fluorine element (also referred to as a fluorine group) in addition to the lipophilic group. Preferred are compounds containing a lipophilic group and a fluorine-containing group. In the case where the compound having a fluorine atom is a compound containing a lipophilic group and a fluorine-containing group, the lipophilic group may contain a fluorine atom or may not contain a fluorine atom, and preferably the lipophilic group does not contain a fluorine atom. The compound having a fluorine atom has one or more lipophilic groups in one molecule, preferably from 2 to 100, particularly preferably from 6 to 80.
作為含氟基,可使用已知的氟基。例如,可列舉含氟烷基、含氟伸烷基等。再者,含氟基中作為親油基而發揮功能者包含於親油基中。 含氟烷基的碳數較佳為1~30,更佳為1~20,進而更佳為1~15。含氟烷基可為直鏈、分支、環狀的任一種。另外,亦可具有醚鍵。另外,含氟烷基亦可為氫原子的全部被取代為氟原子的全氟烷基。 含氟伸烷基的碳數較佳為1~30,更佳為2~20,進而更佳為2~15。含氟伸烷基可為直鏈、分支、環狀的任一種。另外,亦可具有醚鍵。另外,含氟伸烷基亦可為氫原子的全部被取代為氟原子的全氟伸烷基。As the fluorine-containing group, a known fluorine group can be used. For example, a fluorine-containing alkyl group, a fluorine-containing alkylene group, etc. are mentioned. Further, those having a function as a lipophilic group in the fluorine-containing group are contained in the lipophilic group. The fluorine-containing alkyl group preferably has 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, still more preferably 1 to 15 carbon atoms. The fluorine-containing alkyl group may be any of a straight chain, a branched chain, and a cyclic chain. In addition, it may have an ether bond. Further, the fluorine-containing alkyl group may be a perfluoroalkyl group in which all of the hydrogen atoms are substituted with a fluorine atom. The fluorine-containing alkylene group preferably has 1 to 30 carbon atoms, more preferably 2 to 20 carbon atoms, still more preferably 2 to 15 carbon atoms. The fluorine-containing alkylene group may be any of a straight chain, a branched chain, and a cyclic chain. In addition, it may have an ether bond. Further, the fluorine-containing alkylene group may be a perfluoroalkylene group in which all of the hydrogen atoms are substituted with a fluorine atom.
具有氟原子的化合物較佳為氟原子的含有率為1質量%~90質量%,更佳為2質量%~80質量%,進而更佳為5質量%~70質量%。若氟含有率為所述範圍,則剝離性優異。 氟原子的含有率由「{(一分子中的氟原子數´氟原子的質量)/一分子中的所有原子的質量}´100」來定義。The content of the fluorine atom-containing compound is preferably from 1% by mass to 90% by mass, more preferably from 2% by mass to 80% by mass, even more preferably from 5% by mass to 70% by mass. When the fluorine content is in the above range, the peeling property is excellent. The content of the fluorine atom is defined by "{(the mass of the fluorine atom in one molecule, the mass of the fluorine atom) / the mass of all the atoms in one molecule} ́100".
具有氟原子的化合物亦可使用市售品。作為非熱硬化性化合物,市售者可列舉:鐵氟龍(Teflon)(注冊商標)(杜邦(DuPont)公司)、鐵氟紮(Tefzel)(杜邦(DuPont)公司)、氟隆(Fluon)(旭硝子公司)、海伊拉(Heira)(蘇威蘇萊克斯(SolvaySolexis)公司)、哈伊拉(Heiler)(蘇威蘇萊克斯(SolvaySolexis)公司)、魯米氟隆(Lumiflon)(旭硝子公司)、阿弗拉斯(Aflas)(旭硝子公司)、塞夫索特(Cefralsoft)(中央硝子(Central Glass)公司)、塞夫考特(Cefralcoat)(中央硝子(Central Glass)公司)等氟樹脂;威登(Viton)(杜邦(DuPont)公司)、卡爾萊茲(Kalrez)(杜邦(DuPont)公司)、喜富勒(SIFEL)(信越化學工業公司)等商標名的氟橡膠;庫拉托斯(Krytox)(杜邦(DuPont)公司)、氟必琳(Fomblin)(大德科技(Daitoku Tech)公司)、戴姆納姆(Demnum)(大金(Daikin)工業公司)、沙福隆(Surflon)(例如沙福隆(Surflon)S243等,AGC清美化學(AGC Seimi Chemical)公司製造)等以全氟聚醚油為代表的各種氟油;或戴氟琳(Daifree)FB962等戴氟琳(Daifree)FB系列(大金(Daikin)工業公司)、美佳法(Megafac)系列(迪愛生(DIC)公司)等商標名的含氟脫模劑等。 另外,作為具有親油基的具有氟原子的化合物而市售者例如可列舉:迪愛生(DIC)公司製造的美佳法(Megafac)系列的F-251、F-281、F-477、F-553、F-554、F-555、F-556、F-557、F-558、F-559、F-560、F-561、F-563、F-565、F-567、F-568、F-571、R-40、R-41、R-43、R-94;或尼歐斯(NEOS)公司製造的福傑特(Ftergent)系列的710F、710FM、710FS、710FL、730FL、730LM。A commercially available product can also be used as the compound having a fluorine atom. As a non-thermosetting compound, commercially available ones include Teflon (registered trademark) (DuPont), Tefzel (DuPont), and Fluon. (Asahi Glass Co., Ltd.), Heira (SolvaySolexis), Hailer (SolvaySolexis), Lumiflon (Asahi Glass) Company), Aflas (Asahi Glass), Cefralsoft (Central Glass), Cefralcoat (Central Glass), etc. Resin; fluoro rubber such as Viton (DuPont), Kalrez (DuPont), SIFEL (Shin-Etsu Chemical Industry Co., Ltd.); Kura Krytox (DuPont), Fomblin (Daitoku Tech), Demnum (Daikin Industries), Shafu Surflon (such as Surflon S243, etc., AGC Seimi Chemical Co., Ltd.), etc., various fluorocarbons represented by perfluoropolyether oil; or Dai-Fai FB962 Fluoride release agent such as Dairy FB series (Daikin Industrial Co., Ltd.) and Megafac series (DIC). In addition, as a compound having a fluorine atom-containing compound having a oleophilic group, for example, F-251, F-281, F-477, F- of the Megafac series manufactured by DiCai (DIC) Co., Ltd. may be mentioned. 553, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-563, F-565, F-567, F-568, F-571, R-40, R-41, R-43, R-94; or 710F, 710FM, 710FS, 710FL, 730FL, 730LM of the Ftergent series manufactured by NEOS.
本發明中,作為具有氟原子的化合物,亦可使用含有氟的矽烷偶合劑。含有氟的矽烷偶合劑較佳為矽烷偶合劑,特佳為含有氟的烷氧基矽烷。作為市售品,可列舉大金(Daikin)工業股份有限公司製造的歐普路(Optool)DAC-HP、歐普路(Optool)DSX。In the present invention, a fluorine-containing decane coupling agent may be used as the compound having a fluorine atom. The fluorine-containing decane coupling agent is preferably a decane coupling agent, particularly preferably a fluorine-containing alkoxy decane. As a commercial item, Optool DAC-HP and Optool DSX by Daikin Industrial Co., Ltd. are mentioned.
<<<含有矽原子的化合物>>> 含有矽原子的化合物較佳為所謂的熱硬化性化合物(例如,至少於100℃以上開始硬化的化合物)。 另外,本發明中使用的含有矽原子的化合物較佳為耐熱性高的化合物,自25℃以20℃/min昇溫的10%熱質量減少溫度較佳為250℃以上,更佳為280℃以上。另外,上限值並無特別限定,例如較佳為1000℃以下,更佳為800℃以下。根據該態樣,容易形成耐熱性優異的暫時接著劑層。再者,所謂質量減少溫度,是指利用熱重量測定裝置(thermogravimetric analyzer,TGA)於氮氣流下以所述昇溫條件進行測定而得的值。<<<A compound containing a ruthenium atom>>> The compound containing a ruthenium atom is preferably a so-called thermosetting compound (for example, a compound which starts to harden at least at 100 ° C or higher). Further, the ruthenium atom-containing compound used in the present invention is preferably a compound having high heat resistance, and the 10% heat mass reduction temperature which is raised from 20 ° C at 20 ° C / min is preferably 250 ° C or higher, more preferably 280 ° C or higher. . Further, the upper limit is not particularly limited, and is, for example, preferably 1000 ° C or lower, more preferably 800 ° C or lower. According to this aspect, it is easy to form a temporary adhesive layer excellent in heat resistance. In addition, the mass reduction temperature means a value measured by a thermogravimetric analyzer (TGA) under a nitrogen gas flow under the above-described temperature rising conditions.
含有矽原子的化合物可為單體,亦可為寡聚物,還可為聚合物,較佳為寡聚物或聚合物。含有矽原子的化合物的重量平均分子量較佳為1,000以上,更佳為3,000以上,亦可為5,000以上,進而亦可為10,000以上。作為重量平均分子量的上限值,較佳為500,000以下,更佳為100,000以下。 本發明中使用的含有矽原子的化合物較佳為具有矽氧烷鍵,更佳為含有下述式所表示的具有矽氧烷鍵的重複單元。 [化4]於所述式中,R分別獨立地為氫原子或取代基。含有矽原子的化合物藉由含有具有矽氧烷鍵的重複單元而獲得耐熱性更優異的暫時接著劑組成物。 此處,R較佳為氫原子及碳數1~8的一價的烴基,更佳為氫原子、烷基及芳基,進而更佳為氫原子及碳數1~3的烷基。 另外,暫時接著劑組成物中所含的含有矽原子的化合物較佳為其20質量%以上為所述具有矽氧烷鍵的重複單元。 本發明中使用的含有矽原子的化合物可除所述具有矽氧烷鍵的重複單元以外更包含下述的重複單元。 [化5]於所述式中,R1 分別獨立地為氫原子或取代基,X為伸烷基或伸芳基。 R1 較佳為氫原子及碳數1~8的一價的烴基,更佳為氫原子、烷基及芳基,進而更佳為氫原子及碳數1~3的烷基。 X較佳為碳數1~3的伸烷基或伸苯基。 另外,暫時接著劑組成物中所含的含有矽原子的化合物較佳為其80質量%以下為所述重複單元。The compound containing a halogen atom may be a monomer, an oligomer, or a polymer, preferably an oligomer or a polymer. The weight average molecular weight of the compound containing a halogen atom is preferably 1,000 or more, more preferably 3,000 or more, and may be 5,000 or more, and further may be 10,000 or more. The upper limit of the weight average molecular weight is preferably 500,000 or less, more preferably 100,000 or less. The ruthenium atom-containing compound used in the present invention preferably has a decane bond, and more preferably contains a repeating unit having a decane bond represented by the following formula. [Chemical 4] In the formula, R is each independently a hydrogen atom or a substituent. The compound containing a ruthenium atom obtains a temporary adhesive composition which is more excellent in heat resistance by containing a repeating unit having a decane bond. Here, R is preferably a hydrogen atom and a monovalent hydrocarbon group having 1 to 8 carbon atoms, more preferably a hydrogen atom, an alkyl group or an aryl group, and still more preferably a hydrogen atom and an alkyl group having 1 to 3 carbon atoms. Further, the ruthenium atom-containing compound contained in the temporary adhesive composition is preferably 20% by mass or more of the repeating unit having a decane bond. The ruthenium atom-containing compound used in the present invention may further contain the following repeating unit in addition to the repeating unit having a decane bond. [Chemical 5] In the formula, R 1 is each independently a hydrogen atom or a substituent, and X is an alkylene group or an extended aryl group. R 1 is preferably a hydrogen atom and a monovalent hydrocarbon group having 1 to 8 carbon atoms, more preferably a hydrogen atom, an alkyl group or an aryl group, and still more preferably a hydrogen atom and an alkyl group having 1 to 3 carbon atoms. X is preferably an alkylene group having a carbon number of 1 to 3 or a phenyl group. Further, the ruthenium atom-containing compound contained in the temporary adhesive composition is preferably 80% by mass or less of the repeating unit.
作為本發明中使用的含有矽原子的化合物的較佳的第一實施形態,可例示具有交聯性基的態樣。作為交聯性基,是指藉由對加熱(例如150℃以上)進行加熱而形成交聯結構的基,具體而言可列舉酚性羥基、環氧基、氧雜環丁基、羥甲基及烷氧基羥甲基作為較佳例。第一本實施形態中,進而較佳為暫時接著劑組成物含有使所述交聯性基交聯的交聯劑。As a preferable first embodiment of the ruthenium atom-containing compound used in the present invention, a crosslinkable group can be exemplified. The crosslinkable group refers to a group which forms a crosslinked structure by heating (for example, 150 ° C or higher), and specific examples thereof include a phenolic hydroxyl group, an epoxy group, an oxetanyl group, and a methylol group. And alkoxymethylol groups are preferred examples. In the first embodiment, it is preferable that the temporary adhesive composition contains a crosslinking agent that crosslinks the crosslinkable group.
第一實施形態中使用的含有矽原子的化合物較佳為包含通式(21)所表示的重複單元的聚合物。 通式(21) [化6]所述通式(21)中,R1 ~R4 分別獨立地為碳數1~8的一價的烴基,m為1~100的整數,B為正整數,A為0或正整數。 X為包含交聯性基的二價的有機基。The ruthenium atom-containing compound used in the first embodiment is preferably a polymer containing a repeating unit represented by the formula (21). General formula (21) [Chemical 6] In the above formula (21), R 1 to R 4 each independently represent a monovalent hydrocarbon group having 1 to 8 carbon atoms, m is an integer of 1 to 100, B is a positive integer, and A is 0 or a positive integer. X is a divalent organic group containing a crosslinkable group.
R1 ~R4 分別獨立地較佳為碳數1~8的烷基,更佳為甲基或乙基,進而更佳為甲基。 m較佳為3~80的整數,更佳為8~60的整數,進而更佳為10~40的整數。 B較佳為5~100的整數。A較佳為0~5的整數。另外,A/B較佳為0~20,尤其較佳為0.5~5。 作為X所具有的交聯性基,較佳為酚性羥基、環氧基及氧雜環丁基,更佳為酚性羥基及環氧基。 X進而更佳為下述通式(2)或通式(4)所表示的二價的有機基。R 1 to R 4 are each independently preferably an alkyl group having 1 to 8 carbon atoms, more preferably a methyl group or an ethyl group, and still more preferably a methyl group. m is preferably an integer of from 3 to 80, more preferably an integer of from 8 to 60, still more preferably an integer of from 10 to 40. B is preferably an integer of 5 to 100. A is preferably an integer of 0 to 5. Further, A/B is preferably from 0 to 20, particularly preferably from 0.5 to 5. The crosslinkable group of X is preferably a phenolic hydroxyl group, an epoxy group or an oxetanyl group, and more preferably a phenolic hydroxyl group or an epoxy group. Further, X is more preferably a divalent organic group represented by the following formula (2) or formula (4).
通式(2) [化7]所述通式(2)中,Z為二價的連結基,較佳為包含 [化8]的任一個或兩個以上的組合的二價的有機基。 n為0或1,較佳為1。 R5 及R6 分別獨立地為碳數1~4的烷基或碳數1~4的烷氧基。 k分別獨立地為0、1、2的任一者,較佳為0或1,更佳為0。General formula (2) [Chemical 7] In the above formula (2), Z is a divalent linking group, and preferably contains [Chemical 8] Any one or two or more combinations of divalent organic groups. n is 0 or 1, preferably 1. R 5 and R 6 each independently represent an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms. k is independently any of 0, 1, 2, preferably 0 or 1, more preferably 0.
通式(4) [化9]所述通式(4)中,V為二價的連結基,V的較佳範圍與通式(2)中的Z相同。 p為0或1,較佳為1。 R7 及R8 分別獨立地為碳數1~4的烷基或碳數1~4的烷氧基。 h分別獨立地為0、1、2的任一者,較佳為0或1,更佳為0。General formula (4) [Chemical 9] In the above formula (4), V is a divalent linking group, and a preferred range of V is the same as Z in the formula (2). p is 0 or 1, preferably 1. R 7 and R 8 each independently represent an alkyl group having 1 to 4 carbon atoms or an alkoxy group having 1 to 4 carbon atoms. h is independently any of 0, 1, 2, preferably 0 or 1, more preferably 0.
作為交聯劑,較佳為選自利用福爾馬林或福爾馬林-醇而改質的胺基縮合物、三聚氰胺樹脂、脲樹脂、於一分子中平均具有兩個以上的羥甲基或烷氧基羥甲基的苯酚化合物、及於一分子中平均具有兩個以上的環氧基的環氧化合物,更佳為選自於一分子中平均具有兩個以上的羥甲基或烷氧基羥甲基的苯酚化合物及於一分子中平均具有兩個以上的環氧基的環氧化合物。The crosslinking agent is preferably an amine condensate modified from formalin or formalin-alcohol, a melamine resin, a urea resin, and an average of two or more methylol groups in one molecule. Or a phenol compound of an alkoxymethylol group, and an epoxy compound having an average of two or more epoxy groups in one molecule, more preferably selected from an average of two or more methylol groups or alkane in one molecule. A phenolic compound of an oxyhydroxymethyl group and an epoxy compound having an average of two or more epoxy groups in one molecule.
於含有矽原子的化合物所具有的交聯性基為環氧基的情況下,可較佳地使用於一分子中平均具有兩個以上的羥基苯基的苯酚化合物。於一分子中平均具有兩個以上的羥基苯基的苯酚化合物較佳為於一分子中具有3個~5個羥基苯基的化合物,可例示甲酚酚醛清漆樹脂或α,α,α',α'-四(4-羥基苯基)-對二甲苯。作為市售品,例如可列舉旭有機材工業製造的EP-6030G、本州化學製造的Tris-P-PA、旭有機材工業製造的TEP-TPA等。When the crosslinkable group of the compound containing a ruthenium atom is an epoxy group, a phenol compound having an average of two or more hydroxyphenyl groups in one molecule can be preferably used. The phenol compound having an average of two or more hydroxyphenyl groups in one molecule is preferably a compound having 3 to 5 hydroxyphenyl groups in one molecule, and may be exemplified by a cresol novolak resin or α, α, α', α'-Tetrakis(4-hydroxyphenyl)-p-xylene. Examples of commercially available products include EP-6030G manufactured by Asahi Organic Materials Co., Ltd., Tris-P-PA manufactured by Honshu Chemical Co., Ltd., and TEP-TPA manufactured by Asahi Organic Industries.
於含有矽原子的化合物所具有的交聯性基為酚性羥基的情況下,可較佳地使用於一分子中平均具有兩個以上的環氧基的環氧化合物。於一分子中平均具有兩個以上的環氧基的環氧化合物較佳為於一分子中具有2個~5個環氧基的化合物,作為市售品,可例示EOCN-1020、EOCN-102S、EOCN-103S、XD-1000、NC-2000-L、EPPN-201、GAN、NC6000(以上為日本化藥製造)。另外,亦可較佳地使用下述所示的結構的交聯劑。 [化10] When the crosslinkable group of the compound containing a ruthenium atom is a phenolic hydroxyl group, an epoxy compound having an average of two or more epoxy groups in one molecule can be preferably used. The epoxy compound having an average of two or more epoxy groups in one molecule is preferably a compound having 2 to 5 epoxy groups in one molecule, and as a commercial product, EOCN-1020, EOCN-102S can be exemplified. , EOCN-103S, XD-1000, NC-2000-L, EPPN-201, GAN, NC6000 (above is manufactured by Nippon Kayaku). Further, a crosslinking agent having the structure shown below can also be preferably used. [化10]
相對於含有矽原子的化合物100質量份,交聯劑的調配量較佳為0.1質量份~50質量份,更佳為0.1質量份~30質量份,進而更佳為1質量份~20質量份。交聯劑可為一種,亦可為兩種以上。於為兩種以上的情況下,較佳為合計量成為所述範圍。The amount of the crosslinking agent is preferably from 0.1 part by mass to 50 parts by mass, more preferably from 0.1 part by mass to 30 parts by mass, even more preferably from 1 part by mass to 20 parts by mass, per 100 parts by mass of the compound containing a ruthenium atom. . The crosslinking agent may be one type or two or more types. In the case of two or more types, it is preferred that the total amount is in the above range.
另外,較佳為於本實施形態的暫時接著劑組成物中調配觸媒。觸媒為硬化觸媒,可例示酸酐等,較佳為雙(第三丁基磺醯基)重氮甲烷(和光純藥工業製造,BSDM)、四氫鄰苯二甲酸酐(新日本理化製造,理化酸(RIKACID)HH-A)。相對於含有矽原子的化合物100質量份,觸媒可以0.001質量份~10質量份的範圍調配。所述觸媒可僅使用一種,亦可使用兩種以上。Further, it is preferred to prepare a catalyst in the temporary adhesive composition of the present embodiment. The catalyst is a hardening catalyst, and an acid anhydride or the like can be exemplified, and it is preferably bis(t-butylsulfonyl)diazomethane (manufactured by Wako Pure Chemical Industries, BSDM), tetrahydrophthalic anhydride (new Japanese physical and chemical manufacturing). , physicochemical acid (RIKACID) HH-A). The catalyst may be formulated in a range of 0.001 part by mass to 10 parts by mass based on 100 parts by mass of the compound containing a ruthenium atom. The catalyst may be used alone or in combination of two or more.
作為本發明中使用的含有矽原子的化合物的較佳的第二實施形態,可例示含有矽原子的化合物具有Si-H結構的態樣。此處,所謂Si-H結構,是指矽原子的四個結合鍵中的至少一個與氫原子鍵結的結構。矽原子的其餘的結合鍵可與氫原子鍵結,亦可與其他原子(例如氧原子或碳原子等)鍵結。 第二實施形態中,暫時接著劑組成物較佳為包含觸媒,且除具有所述Si-H結構並含有矽原子的化合物以外,亦包含含有矽原子的化合物且含有乙烯基的化合物(即,含有矽原子及乙烯基的化合物)、及其他的含有乙烯基的化合物(即,不含矽原子且含有乙烯基的化合物)中的至少一種。第二實施形態中,暫時接著劑組成物較佳為至少包含具有Si-H結構並含有矽原子的化合物及含有矽原子及乙烯基的化合物。進而,具有Si-H結構並含有矽原子的化合物以及含有矽原子及乙烯基的化合物分別較佳為具有矽氧烷鍵。As a preferred second embodiment of the ruthenium atom-containing compound used in the present invention, a compound containing a ruthenium atom has a Si-H structure. Here, the Si—H structure means a structure in which at least one of the four bond bonds of a ruthenium atom is bonded to a hydrogen atom. The remaining bond of the ruthenium atom may be bonded to a hydrogen atom or may be bonded to another atom such as an oxygen atom or a carbon atom. In the second embodiment, the temporary adhesive composition preferably contains a catalyst, and a compound containing a ruthenium atom and a vinyl group in addition to the compound having the Si-H structure and containing a ruthenium atom (ie, At least one of a compound containing a ruthenium atom and a vinyl group, and another compound containing a vinyl group (that is, a compound containing no ruthenium atom and containing a vinyl group). In the second embodiment, the temporary adhesive composition preferably contains at least a compound having a Si-H structure and containing a ruthenium atom, and a compound containing a ruthenium atom and a vinyl group. Further, a compound having a Si—H structure and containing a ruthenium atom, and a compound containing a ruthenium atom and a vinyl group each preferably have a decane bond.
首先,對含有矽原子的化合物具有Si-H結構的態樣進行說明。於含有矽原子的化合物具有Si-H的情況下,較佳為含有矽原子的化合物較佳由下述式表示。 [化11]所述式中,v為0~1的範圍內,u為0~2的範圍內,z為0~1的範圍內,R1 、R2 、R3 、R7 、R8 、R9 及R10 分別獨立地表示有機基,當(u+v+z)的合計為0時,R8 、R9 及R10 的至少一個為氫原子。p為正的整數。 於所述式中,p較佳為1~100的整數,更佳為20~80的整數。 作為具有Si-H結構並含有矽原子的化合物的例子,可例示道康寧公司(Dow Corning Corp.)製造的F1-3546或6-3570。 具有Si-H結構並含有矽原子的化合物可僅使用一種,亦可使用兩種以上。First, a description will be given of a state in which a compound containing a ruthenium atom has a Si-H structure. In the case where the compound containing a ruthenium atom has Si-H, it is preferred that the compound containing a ruthenium atom is represented by the following formula. [11] In the above formula, v is in the range of 0 to 1, u is in the range of 0 to 2, z is in the range of 0 to 1, and R 1 , R 2 , R 3 , R 7 , R 8 , R 9 and R 10 each independently represents an organic group, and when the total of (u+v+z) is 0, at least one of R 8 , R 9 and R 10 is a hydrogen atom. p is a positive integer. In the above formula, p is preferably an integer of from 1 to 100, more preferably an integer of from 20 to 80. As an example of the compound having a Si-H structure and containing a ruthenium atom, F1-3546 or 6-3570 manufactured by Dow Corning Corp. can be exemplified. The compound having a Si-H structure and containing a ruthenium atom may be used alone or in combination of two or more.
其次,對含有乙烯基的化合物進行說明。本發明中使用的含有乙烯基的化合物可為單體,亦可為寡聚物,還可為聚合物,較佳為寡聚物或聚合物,含有乙烯基的化合物的重量平均分子量較佳為1,000以上,更佳為3,000以上,亦可為5,000以上,進而亦可為10,000以上。作為重量平均分子量的上限值,較佳為500,000以下,更佳為100,000以下。 含有乙烯基的化合物較佳為具有矽氧烷鍵,更佳為依據下述式E1而包含C1、C2及C3此三個含有矽氧烷鍵的重複單元構成成分的至少一個。 式E1 E(C1)m (C2)n (C3)o E 所述式E1中,E分別獨立地表示封端(end-capping)基,m、n及o分別獨立地表示含有乙烯基的化合物中的各構成成分的莫耳比,m為0.025~1.0的範圍,n為0.0~0.95的範圍,o為0.0~0.60的範圍。E及(C1)的至少一者包含乙烯基。Next, a compound containing a vinyl group will be described. The vinyl group-containing compound used in the present invention may be a monomer, an oligomer, or a polymer, preferably an oligomer or a polymer, and the weight average molecular weight of the compound containing a vinyl group is preferably 1,000 or more, more preferably 3,000 or more, and may be 5,000 or more, and further may be 10,000 or more. The upper limit of the weight average molecular weight is preferably 500,000 or less, more preferably 100,000 or less. The vinyl group-containing compound preferably has a decane bond, and more preferably contains at least one of C1, C2 and C3, which are three repeating unit constituents containing a decane bond, according to the following formula E1. E1 E(C1) m (C2) n (C3) o E In the formula E1, E independently represents an end-capping group, and m, n and o each independently represent a compound containing a vinyl group. The molar ratio of each of the constituent components is m in the range of 0.025 to 1.0, n is in the range of 0.0 to 0.95, and o is in the range of 0.0 to 0.60. At least one of E and (C1) contains a vinyl group.
所述式E1較佳為由以下的式E2表示。 式E2 [化12]所述式E2中,R1 、R2 、R3 、R4 、R5 、R15 及R16 分別獨立地表示有機基,R2 、R3 、R4 、R15 及R16 的至少一個包含乙烯基。R6 表示氫原子或具有1個~4個碳原子的烴基,v為0~1的範圍內,u為0~2的範圍內,m、n及o分別獨立地表示含有乙烯基的化合物中的各構成成分的莫耳比,m為0.025~1.0的範圍,n為0.0~0.95的範圍,o為0.0~0.60的範圍。 R2 、R3 、R4 、R15 及R16 的至少一個較佳為包含乙烯基的脂肪族基或芳基。關於脂肪族基的碳數,較佳為碳數1~8的烷基,更佳為碳數1~4的烷基。另外,芳基較佳為碳數6~12的芳基。乙烯基較佳為取代於脂肪族基或芳基的氫原子上而存在。 作為此種化合物的例子,可例示道康寧公司(Dow Corning Corp.)製造的SFD-119、SFD-120及6-3444。 於第二實施形態中,相對於具有Si-H結構並含有矽原子的化合物100質量份,含有乙烯基的化合物的調配量較佳為20質量份~500質量份,更佳為40質量份~300質量份。 含有乙烯基的化合物可僅使用一種,亦可使用兩種以上。The formula E1 is preferably represented by the following formula E2. E2 [12] In the formula E2, R 1 , R 2 , R 3 , R 4 , R 5 , R 15 and R 16 each independently represent an organic group, and at least one of R 2 , R 3 , R 4 , R 15 and R 16 Contains vinyl. R 6 represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms, v is in the range of 0 to 1, and u is in the range of 0 to 2, and m, n and o each independently represent a compound containing a vinyl group. The molar ratio of each constituent component is m in the range of 0.025 to 1.0, n is in the range of 0.0 to 0.95, and o is in the range of 0.0 to 0.60. At least one of R 2 , R 3 , R 4 , R 15 and R 16 is preferably an aliphatic group or an aryl group containing a vinyl group. The carbon number of the aliphatic group is preferably an alkyl group having 1 to 8 carbon atoms, more preferably an alkyl group having 1 to 4 carbon atoms. Further, the aryl group is preferably an aryl group having 6 to 12 carbon atoms. The vinyl group is preferably present in place of a hydrogen atom of an aliphatic group or an aryl group. As an example of such a compound, SFD-119, SFD-120, and 6-3444 manufactured by Dow Corning Corp. can be exemplified. In the second embodiment, the compounding amount of the vinyl group-containing compound is preferably 20 parts by mass to 500 parts by mass, more preferably 40 parts by mass, per 100 parts by mass of the compound having a Si—H structure and containing a ruthenium atom. 300 parts by mass. The vinyl group-containing compound may be used singly or in combination of two or more.
對第二實施形態中所使用的觸媒進行說明。第二實施形態中,觸媒是以促進含有矽原子的化合物與含有乙烯基的化合物的熱硬化反應(特別是藉由150℃以上的熱而進行硬化的反應)而調配。 觸媒可選自氯化鉑酸、使脂肪族不飽和有機矽化合物與氯化鉑酸或二氯化鉑反應而獲得的含有鉑的觸媒(例如,鉑(0)-1,3-二乙烯基-1,1,3,3-四甲基二矽氧烷錯合物)、乙醯丙酮鉑及可於矽氫化反應中使用的任意的其他過渡金屬觸媒的群組。 觸媒的調配量可根據觸媒的種類等適當地規定。關於觸媒的調配量,於進行調配的情況下,例如相對於暫時接著劑組成物的質量,可以0.01質量%~40質量%的比例調配。觸媒可僅使用一種,亦可使用兩種以上。The catalyst used in the second embodiment will be described. In the second embodiment, the catalyst is prepared by a thermosetting reaction (especially a reaction of curing by heat of 150 ° C or more) of a compound containing a ruthenium atom and a compound containing a vinyl group. The catalyst may be selected from platinum chloride acid, a platinum-containing catalyst obtained by reacting an aliphatic unsaturated organic phosphonium compound with platinum chloride acid or platinum chloride (for example, platinum (0)-1,3-di A group of vinyl-1,1,3,3-tetramethyldioxane complexes, acetoacetate platinum, and any other transition metal catalyst that can be used in the hydrogenation of hydrazine. The amount of the catalyst to be formulated can be appropriately determined depending on the type of the catalyst or the like. The amount of the catalyst to be blended may be adjusted in a ratio of 0.01% by mass to 40% by mass based on the mass of the temporary adhesive composition, for example, in the case of blending. The catalyst may be used alone or in combination of two or more.
另外,第二實施形態中,為了推遲觸媒反應的開始,亦可包含可與觸媒進行相互作用的阻礙劑。阻礙劑可例示:順丁烯二酸二烯丙酯、乙炔基環己醇、雙(2-甲氧基-1-甲基乙基) 順丁烯二酸酯及N,N,N’,N’-四甲基乙二胺。阻礙劑可以觸媒的0.01質量%~40質量%的比例調配。阻礙劑可僅使用一種,亦可使用兩種以上。Further, in the second embodiment, in order to delay the start of the catalyst reaction, an inhibitor capable of interacting with the catalyst may be included. The inhibitor may be exemplified by diallyl maleate, ethynylcyclohexanol, bis(2-methoxy-1-methylethyl) maleate, and N,N,N', N'-tetramethylethylenediamine. The inhibitor may be formulated in a ratio of 0.01% by mass to 40% by mass of the catalyst. The inhibitor may be used singly or in combination of two or more.
另外,作為所述第二實施形態中敘述的具有Si-H結構並含有矽原子的化合物,亦可使用低分子化合物。作為低分子化合物,可例示以下的化合物。 [化13]除所述以外,作為本發明中所使用的含有矽原子的化合物,亦可使用日本專利特開2012-188650號公報的請求項1等所記載的含有環氧基的高分子化合物、及日本專利特開2013-82801號公報的請求項1等所記載的含有非芳香族飽和烴基的有機聚矽氧烷,該些內容被併入至本說明書中。Further, as the compound having a Si-H structure and containing a ruthenium atom described in the second embodiment, a low molecular compound can also be used. The following compounds are exemplified as the low molecular compound. [Chemistry 13] In addition, as the compound containing a ruthenium atom used in the present invention, an epoxy group-containing polymer compound described in the claim 1 of JP-A-2012-188650, and a Japanese patent can be used. The non-aromatic saturated hydrocarbon group-containing organopolyoxane described in the above-mentioned claim 1 of the Japanese Patent Publication No. 2013-82801, the contents of which are incorporated herein by reference.
相對於除溶劑以外的暫時接著劑組成物的質量,暫時接著劑組成物中的含有矽原子的化合物的含量較佳為50.00質量%~99.99質量%,更佳為70.00質量%~99.99質量%,特佳為88.00質量%~99.99質量%。若含有矽原子的化合物的含量為所述範圍,則接著性及剝離性更優異。 另外,暫時接著劑組成物中的含有矽原子的化合物可僅為一種,亦可為多種的組合。該情況下,較佳為所述含量的合計量為所述範圍。The content of the ruthenium atom-containing compound in the temporary adhesive composition is preferably from 50.00% by mass to 99.9% by mass, and more preferably from 70.00% by mass to 99.99% by mass, based on the mass of the temporary adhesive composition other than the solvent. It is particularly preferably from 88.00% by mass to 99.99% by mass. When the content of the compound containing a ruthenium atom is in the above range, the adhesion and the releasability are more excellent. Further, the compound containing a ruthenium atom in the temporary adhesive composition may be used alone or in combination of plural kinds. In this case, it is preferred that the total amount of the content is the above range.
相對於暫時接著劑組成物中所含的樹脂的合計量,本發明中使用的暫時接著劑組成物中的含有氟原子及矽原子中的至少一者的化合物的合計含量較佳為0.009質量%以上,更佳為0.0001質量%以上,進而更佳為0.001質量%以上,特佳為0.005質量%以上,尤佳為0.01質量%以上。另外,作為上限值,較佳為10質量%以下,進而較佳為5質量%以下,更佳為小於2.5質量%。 若含有氟原子及矽原子中的至少一者的化合物的合計含量為所述範圍,則接著性及剝離性更優異。特別是本發明中,即便暫時接著劑組成物的量少,亦可達成本發明的效果,就該點而言價值高。 含有氟原子及矽原子中的至少一者的化合物可為單獨一種,亦可併用兩種以上。於併用兩種以上的情況下,較佳為合計的含量為所述範圍。The total content of the compound containing at least one of a fluorine atom and a ruthenium atom in the temporary adhesive composition used in the present invention is preferably 0.009% by mass based on the total amount of the resin contained in the temporary adhesive composition. The above is more preferably 0.0001% by mass or more, still more preferably 0.001% by mass or more, particularly preferably 0.005% by mass or more, and particularly preferably 0.01% by mass or more. Further, the upper limit is preferably 10% by mass or less, more preferably 5% by mass or less, and still more preferably 2.5% by mass or less. When the total content of the compound containing at least one of a fluorine atom and a ruthenium atom is in the above range, the adhesion and the releasability are more excellent. In particular, in the present invention, the effect of the present invention can be attained even if the amount of the temporary adhesive composition is small, and the value is high in this point. The compound containing at least one of a fluorine atom and a ruthenium atom may be used alone or in combination of two or more. When two or more types are used together, it is preferable that the total content is the said range.
<<抗氧化劑>> 就防止因加熱時的氧化引起的彈性體的低分子化或凝膠化的觀點而言,本發明中使用的暫時接著劑組成物可含有抗氧化劑。作為抗氧化劑,可使用酚系抗氧化劑、硫系抗氧化劑、磷系抗氧化劑、醌系抗氧化劑、胺系抗氧化劑等。 作為酚系抗氧化劑,例如可列舉:對甲氧基苯酚、2,6-二-第三丁基-4-甲基苯酚、巴斯夫(BASF)(股)製造的「易璐諾斯(Irganox)1010」、「易璐諾斯(Irganox)1330」、「易璐諾斯(Irganox)3114」、「易璐諾斯(Irganox)1035」、住友化學(股)製造的「蘇米萊澤(Sumilizer)MDP-S」、「蘇米萊澤(Sumilizer)GA-80」等。 作為硫系抗氧化劑,例如可列舉:3,3'-硫代二丙酸二硬脂基酯、住友化學(股)製造的「蘇米萊澤(Sumilizer)TPM」、「蘇米萊澤(Sumilizer)TPS」、「蘇米萊澤(Sumilizer)TP-D」等。 作為磷系抗氧化劑,例如可列舉:三(2,4-二-第三丁基苯基)亞磷酸鹽、雙(2,4-二-第三丁基苯基)季戊四醇二亞磷酸鹽、聚(二丙二醇)苯基亞磷酸鹽、二苯基異癸基亞磷酸鹽、2-乙基己基二苯基亞磷酸鹽、三苯基亞磷酸鹽、巴斯夫(BASF)(股)製造的「易璐佛斯(Irgafos)168」、「易璐佛斯(Irgafos)38」等。 作為醌系抗氧化劑,例如可列舉對苯醌、2-第三丁基-1,4-苯醌等。 作為胺系抗氧化劑,例如可列舉二甲基苯胺或啡噻嗪等。 抗氧化劑較佳為易璐諾斯(Irganox)1010、易璐諾斯(Irganox)1330、3,3'-硫代二丙酸二硬脂基酯、蘇米萊澤(Sumilizer)TP-D,更佳為易璐諾斯(Irganox)1010、易璐諾斯(Irganox)1330,特佳為易璐諾斯(Irganox)1010。 另外,所述抗氧化劑中,較佳為倂用酚系抗氧化劑與硫系抗氧化劑或磷系抗氧化劑,特佳為倂用酚系抗氧化劑與硫系抗氧化劑。特別是於使用具有苯乙烯結構的熱塑性彈性體作為彈性體的情況下,較佳為倂用酚系抗氧化劑與硫系抗氧化劑。藉由設為此種組合,而可期待可效率良好地抑制因氧化反應引起的彈性體的劣化的效果。於倂用酚系抗氧化劑與硫系抗氧化劑的情況下,酚系抗氧化劑與硫系抗氧化劑的質量比較佳為酚系抗氧化劑:硫系抗氧化劑=95:5~5:95,更佳為25:75~75:25。 作為抗氧化劑的組合,較佳為易璐諾斯(Irganox)1010與蘇米萊澤(Sumilizer)TP-D、易璐諾斯(Irganox)1330與蘇米萊澤(Sumilizer)TP-D及蘇米萊澤(Sumilizer)GA-80與蘇米萊澤(Sumilizer)TP-D,更佳為易璐諾斯(Irganox)1010與蘇米萊澤(Sumilizer)TP-D、易璐諾斯(Irganox)1330與蘇米萊澤(Sumilizer)TP-D,特佳為易璐諾斯(Irganox)1010與蘇米萊澤(Sumilizer)TP-D。<<Antioxidant>> The temporary adhesive composition used in the present invention may contain an antioxidant from the viewpoint of preventing degradation of the elastomer or gelation due to oxidation during heating. As the antioxidant, a phenol-based antioxidant, a sulfur-based antioxidant, a phosphorus-based antioxidant, a lanthanoid antioxidant, an amine-based antioxidant, or the like can be used. Examples of the phenolic antioxidant include "p-methoxyphenol", 2,6-di-tert-butyl-4-methylphenol, and "BARN" (Irganox). "1010", "Irganox 1330", "Irganox 3114", "Irganox 1035", Sumitomo Chemical (Sumilizer) ) MDP-S", "Sumilizer GA-80", etc. Examples of the sulfur-based antioxidant include 3,3'-dithiolactyl thiodipropionate, "Sumilizer TPM" manufactured by Sumitomo Chemical Co., Ltd., and "Sumi Laize ( Sumilizer) TPS", "Sumilizer TP-D", etc. Examples of the phosphorus-based antioxidant include tris(2,4-di-t-butylphenyl)phosphite, bis(2,4-di-t-butylphenyl)pentaerythritol diphosphite, Poly(dipropylene glycol) phenyl phosphite, diphenyl isodecyl phosphite, 2-ethylhexyl diphenyl phosphite, triphenyl phosphite, BASF (BASF) Irgafos 168, Irgafos 38, etc. Examples of the lanthanoid antioxidant include p-benzoquinone and 2-tert-butyl-1,4-benzoquinone. Examples of the amine-based antioxidant include dimethylaniline or phenothiazine. The antioxidant is preferably Irganox 1010, Irganox 1330, 3,3'-dithiolactyl thiodipropionate, Sumilizer TP-D, More preferably, it is Irganox 1010, Irganox 1330, and especially Irganox 1010. Further, among the antioxidants, a phenolic antioxidant, a sulfur-based antioxidant or a phosphorus-based antioxidant is preferred, and a phenolic antioxidant and a sulfur-based antioxidant are particularly preferred. In particular, when a thermoplastic elastomer having a styrene structure is used as the elastomer, it is preferred to use a phenol-based antioxidant and a sulfur-based antioxidant. By such a combination, an effect of efficiently suppressing deterioration of the elastomer due to the oxidation reaction can be expected. In the case of phenolic antioxidants and sulfur-based antioxidants, the quality of phenolic antioxidants and sulfur-based antioxidants is preferably phenolic antioxidants: sulfur-based antioxidants = 95:5 to 5:95, more preferably It is 25:75 to 75:25. As a combination of antioxidants, Irganox 1010 and Sumilizer TP-D, Irganox 1330 and Sumilizer TP-D and Sue are preferred. Sumilizer GA-80 and Sumilizer TP-D, more preferably Irganox 1010 and Sumilizer TP-D, Irganox 1330 and Sumilizer TP-D, especially good for Irganox 1010 and Sumilizer TP-D.
就防止加熱中的昇華的觀點而言,抗氧化劑的分子量較佳為400以上,進而更佳為600以上,特佳為750以上。The molecular weight of the antioxidant is preferably 400 or more, more preferably 600 or more, and particularly preferably 750 or more from the viewpoint of preventing sublimation during heating.
於暫時接著劑組成物具有抗氧化劑的情況下,相對於暫時接著劑組成物的總固體成分,抗氧化劑的含量較佳為0.001質量%~20.0質量%,更佳為0.005質量%~10.0質量%。 抗氧化劑可僅為一種,亦可為兩種以上。於抗氧化劑為兩種以上的情況下,較佳為其合計為所述範圍。When the temporary adhesive composition has an antioxidant, the content of the antioxidant is preferably 0.001% by mass to 20.0% by mass, and more preferably 0.005% by mass to 10.0% by mass based on the total solid content of the temporary adhesive composition. . The antioxidant may be used alone or in combination of two or more. When the amount of the antioxidant is two or more, it is preferred that the total is in the above range.
<<自由基聚合性化合物>> 本發明中使用的暫時接著劑組成物亦較佳為包含自由基聚合性化合物。藉由使用包含自由基聚合性化合物的暫時接著劑組成物,而容易抑制加熱時的暫時接著劑層的流動變形。因此,例如於對研磨加工基板後的積層體進行加熱處理的情況下等,可抑制加熱時的暫時接著劑層的流動變形,從而可有效地抑制翹曲的產生。另外,可形成具有硬度的暫時接著劑層,因此即便於研磨加工基板時局部地施加壓力,暫時接著劑層亦不易發生變形,平坦研磨性優異。<<Radical Polymerizable Compound>> The temporary adhesive composition used in the present invention preferably further contains a radical polymerizable compound. By using a temporary adhesive composition containing a radical polymerizable compound, flow deformation of the temporary adhesive layer at the time of heating can be easily suppressed. Therefore, for example, when the laminated body after polishing the substrate is subjected to heat treatment, the flow deformation of the temporary adhesive layer during heating can be suppressed, and the occurrence of warpage can be effectively suppressed. Further, since the temporary adhesive layer having hardness can be formed, even if pressure is locally applied when the substrate is polished, the temporary adhesive layer is less likely to be deformed, and the flat polishing property is excellent.
於本發明中,自由基聚合性化合物為具有自由基聚合性基的化合物,且可使用可藉由自由基進行聚合的公知的自由基聚合性化合物。此種化合物為於產業領域中廣泛為人所知者,於本發明中可並無特別限定地使用該些。該些例如可為單體、預聚物、寡聚物或該些的混合物及該些的多聚體等化學形態的任一種。作為自由基聚合性化合物,可參考日本專利特開2015-087611號公報的段落0099~段落0180的記載,該些內容被併入至本說明書中。In the present invention, the radically polymerizable compound is a compound having a radical polymerizable group, and a known radically polymerizable compound which can be polymerized by a radical can be used. Such a compound is widely known in the industrial field, and it can be used without particular limitation in the present invention. These may be, for example, any of a chemical form such as a monomer, a prepolymer, an oligomer, or a mixture thereof, and a polymer of the above. As the radically polymerizable compound, the description of paragraphs 0099 to 0180 of JP-A-2015-087611 can be referred to, and the contents are incorporated in the present specification.
另外,作為自由基聚合性化合物,亦較佳為如日本專利特公昭48-41708號公報、日本專利特開昭51-37193號公報、日本專利特公平2-32293號公報、日本專利特公平2-16765號公報中所記載的丙烯酸胺基甲酸酯類或日本專利特公昭58-49860號公報、日本專利特公昭56-17654號公報、日本專利特公昭62-39417號公報、日本專利特公昭62-39418號公報所記載的具有環氧乙烷系骨架的胺基甲酸酯化合物類。進而,亦可使用日本專利特開昭63-277653號公報、日本專利特開昭63-260909號公報、日本專利特開平1-105238號公報中所記載的分子內具有胺基結構或硫醚結構的加成聚合性單體類作為自由基聚合性化合物。In addition, as a radically polymerizable compound, it is also preferable to use Japanese Patent Publication No. Sho 48-41708, Japanese Patent Laid-Open No. Sho 51-37193, Japanese Patent Laid-Open No. 2-32293, and Japanese Patent Special Fair 2 Japanese Patent Publication No. Sho-58-49860, Japanese Patent Publication No. SHO-58-17654, Japanese Patent Publication No. Sho 62-39417, and Japanese Patent Publication No. Sho 62-62 A urethane compound having an ethylene oxide skeleton as described in JP-A-39418. Further, an amino group structure or a thioether structure in the molecule described in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The addition polymerizable monomer is a radical polymerizable compound.
作為自由基聚合性化合物的市售品,可列舉:胺基甲酸酯寡聚物UAS-10、UAB-140(山陽國策紙漿(Sanyo Kokusaku Pulp)公司製造);NK酯M-40G、NK酯4G、NK酯A-9300、NK酯M-9300、NK酯A-TMMT、NK酯A-DPH、NK酯A-BPE-4、UA-7200(新中村化學工业(股)製造);DPHA-40H(日本化藥公司製造);UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(共榮社化學(股)製造);布蘭莫(Blemmer)PME400(日油(股)製造)等。The commercially available product of the radically polymerizable compound may, for example, be a urethane oligomer UAS-10 or UAB-140 (manufactured by Sanyo Kokusaku Pulp Co., Ltd.); NK ester M-40G, NK ester. 4G, NK ester A-9300, NK ester M-9300, NK ester A-TMMT, NK ester A-DPH, NK ester A-BPE-4, UA-7200 (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.); DPHA- 40H (manufactured by Nippon Kayaku Co., Ltd.); UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.); Blemmer PME400 (Nippon Oil (stock) manufacturing) and so on.
於本發明中,就耐熱性的觀點而言,自由基聚合性化合物較佳為具有下述(P-1)~(P-4)所表示的部分結構的至少一種,更佳為具有下述(P-3)所表示的部分結構。式中的*為連結鍵。In the present invention, the radically polymerizable compound preferably has at least one of the partial structures represented by the following (P-1) to (P-4), and more preferably has the following structure. Partial structure represented by (P-3). The * in the formula is a link key.
[化14] [Chemistry 14]
作為具有所述部分結構的自由基聚合性化合物的具體例,例如可列舉三羥甲基丙烷三(甲基)丙烯酸酯、異氰脲酸環氧乙烷改質二(甲基)丙烯酸酯、異氰脲酸環氧乙烷改質三(甲基)丙烯酸酯、異氰脲酸三烯丙酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二羥甲基丙烷四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯等,於本發明中,可特佳地使用該些自由基聚合性化合物。Specific examples of the radically polymerizable compound having the partial structure include trimethylolpropane tri(meth)acrylate and isocyanuric acid ethylene oxide modified di(meth)acrylate. Isocyanuric acid ethylene oxide modified tris(meth)acrylate, triallyl isocyanurate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dimethylolpropane Tetrakis (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, tetramethylol methane tetra (meth) acrylate, etc., in the present invention, particularly excellent These radical polymerizable compounds are used in situ.
於本發明中使用的暫時接著劑組成物中,就良好的接著性、平坦研磨性、剝離性、翹曲的觀點而言,相對於除了溶劑以外的暫時接著劑組成物的質量,添加自由基聚合性化合物時的含量較佳為1質量%~50質量%,更佳為1質量%~30質量%,進而更佳為5質量%~30質量%。自由基聚合性化合物可單獨使用一種,亦可混合使用兩種以上。 另外,於本發明中使用的暫時接著劑組成物中,添加自由基聚合性化合物時的彈性體與自由基聚合性化合物的質量比例較佳為彈性體:自由基聚合性化合物=98:2~10:90,更佳為95:5~30:70,特佳為90:10~50:50。若彈性體與自由基聚合性化合物的質量比例為所述範圍,則可形成接著性、平坦研磨性、剝離性及翹曲抑制優異的暫時接著劑層。In the temporary adhesive composition used in the present invention, free radicals are added to the mass of the temporary adhesive composition other than the solvent from the viewpoint of good adhesion, flat polishing property, peelability, and warpage. The content of the polymerizable compound is preferably from 1% by mass to 50% by mass, more preferably from 1% by mass to 30% by mass, even more preferably from 5% by mass to 30% by mass. The radically polymerizable compound may be used alone or in combination of two or more. Further, in the temporary adhesive composition used in the present invention, the mass ratio of the elastomer to the radically polymerizable compound when the radical polymerizable compound is added is preferably an elastomer: radical polymerizable compound = 98:2 - 10:90, more preferably 95:5~30:70, especially good 90:10~50:50. When the mass ratio of the elastomer and the radically polymerizable compound is in the above range, a temporary adhesive layer excellent in adhesion, flatness, releasability, and warpage can be formed.
<<其他成分>> 在不損及本發明的效果的範圍內,本發明中使用的暫時接著劑組成物視需要可調配各種添加物,例如不含氟原子及矽原子的界面活性劑、塑化劑、硬化劑、所述以外的觸媒、填充劑、密接促進劑、紫外線吸收劑、抗凝聚劑、彈性體或其他高分子化合物等。於調配該些添加劑的情況下,其調配量分別較佳為暫時接著劑組成物的總固體成分的3質量%以下,更佳為1質量%以下。調配時的下限值分別較佳為0.0001質量%以上。另外,該些添加劑的合計調配量較佳為暫時接著劑組成物的總固體成分的10質量%以下,更佳為3質量%以下。調配該些成分時的合計調配量的下限值較佳為0.0001質量%以上。<<Other Ingredient>> The temporary adhesive composition used in the present invention may be optionally formulated with various additives such as a surfactant having no fluorine atom and a halogen atom, and plastic, insofar as the effects of the present invention are not impaired. A chemical agent, a hardener, a catalyst other than the above, a filler, a adhesion promoter, an ultraviolet absorber, an anti-agglomeration agent, an elastomer or other polymer compound. When these additives are blended, the blending amount thereof is preferably 3% by mass or less, and more preferably 1% by mass or less, based on the total solid content of the temporary adhesive composition. The lower limit of the blending time is preferably 0.0001% by mass or more. In addition, the total amount of the additives is preferably 10% by mass or less, and more preferably 3% by mass or less based on the total solid content of the temporary adhesive composition. The lower limit of the total amount of the ingredients to be blended is preferably 0.0001% by mass or more.
本發明中使用的暫時接著劑組成物較佳為不含金屬等雜質。作為該些材料中所含的雜質的含量,較佳為1質量ppm以下,更佳為1質量ppb以下,進而更佳為100質量ppt以下,尤佳為10質量ppt以下,特佳為實質上不含(測定裝置的檢測界限以下)。 作為將金屬等雜質自暫時接著劑組成物去除的方法,例如可列舉使用過濾器的過濾。作為過濾器孔徑,較佳為細孔徑10 nm以下,更佳為5 nm以下,進而更佳為3 nm以下。關於過濾器的材質,較佳為聚四氟乙烯製、聚乙烯製、尼龍製的過濾器。過濾器可使用利用有機溶劑預先清洗者。過濾器過濾步驟中,可將多種過濾器串聯或並聯連接而使用。於使用多種過濾器的情況下,可組合使用孔徑及/或材質不同的過濾器。另外,亦可將各種材料多次過濾,多次過濾的步驟亦可為循環過濾步驟。 另外,作為減少暫時接著劑組成物中所含的金屬等雜質的方法,可列舉如下等方法:選擇金屬含量少的原料作為構成暫時接著劑組成物的原料;對構成暫時接著劑組成物的原料進行過濾器過濾;於利用聚四氟乙烯等於裝置內形成內襯而盡可能地抑制污染(contamination)的條件下進行蒸餾。對構成暫時接著劑組成物的原料進行的過濾器過濾中的較佳條件與所述條件相同。 除了過濾器過濾以外,可使用吸附材料進行雜質的去除,亦可組合使用過濾器過濾與吸附材料。作為吸附材料,可使用公知的吸附材料,例如可使用矽膠、沸石、活性碳等無機系吸附材料、或有機系吸附材料。The temporary adhesive composition used in the present invention preferably contains no impurities such as metal. The content of the impurities contained in the materials is preferably 1 ppm by mass or less, more preferably 1 mass ppb or less, still more preferably 100 masses or less, more preferably 10 masses or less, and particularly preferably substantially Not included (below the detection limit of the measuring device). As a method of removing impurities such as metal from the temporary adhesive composition, for example, filtration using a filter is mentioned. The filter pore diameter is preferably a pore diameter of 10 nm or less, more preferably 5 nm or less, and still more preferably 3 nm or less. The material of the filter is preferably a filter made of polytetrafluoroethylene, polyethylene or nylon. The filter can be cleaned beforehand using an organic solvent. In the filter filtration step, a plurality of filters can be used in series or in parallel. In the case of using a variety of filters, filters with different apertures and/or materials can be used in combination. In addition, various materials may be filtered multiple times, and the step of multiple filtration may also be a cyclic filtration step. In addition, as a method of reducing impurities such as a metal contained in the temporary adhesive composition, a method of selecting a raw material having a small metal content as a raw material constituting the temporary adhesive composition and a raw material constituting the temporary adhesive composition may be mentioned. Filter filtration is carried out; distillation is carried out under conditions in which polytetrafluoroethylene is equal to the inner liner formed in the apparatus to inhibit contamination as much as possible. The preferred conditions for filter filtration of the raw materials constituting the temporary adhesive composition are the same as those described above. In addition to filter filtration, the adsorbent material may be used for impurity removal, and a filter may be used in combination to filter and adsorb the material. As the adsorbent, a known adsorbent can be used. For example, an inorganic adsorbent such as tannin, zeolite or activated carbon, or an organic adsorbent can be used.
<暫時接著劑組成物的製備> 本發明中使用的暫時接著劑組成物可將所述各成分加以混合而製備。各成分的混合通常於0℃~100℃的範圍內進行。另外,於將各成分加以混合後,例如較佳為利用過濾器進行過濾。過濾可以多階段進行,亦可反覆進行多次。另外,亦可對經過濾的液體進行再過濾。 作為過濾器,若為自先前以來用於過濾用途等的過濾器,則可無特別限定地使用。例如可列舉使用聚四氟乙烯(Polytetrafluoroethylene,PTFE)等氟樹脂、尼龍-6、尼龍-6,6等聚醯胺系樹脂、聚乙烯、聚丙烯(Polypropylene,PP)等聚烯烴樹脂(包含高密度、超高分子量的聚烯烴樹脂)等原材料的過濾器。該些原材料之中,較佳為聚丙烯(含有高密度聚丙烯)及尼龍。 過濾器的孔徑例如適合的是0.003 μm~5.0 μm左右。藉由設為該範圍,可抑制過濾堵塞,並且可確實地去除組成物中所含的雜質或凝聚物等微細的異物。 當使用過濾器時,可組合不同的過濾器。此時,利用第一過濾器的過濾可僅為一次,亦可進行兩次以上。於組合不同的過濾器而進行兩次以上的過濾的情況下,較佳為第二次以後的孔徑與第一次的過濾的孔徑相同,或比第一次的過濾的孔徑小。另外,亦可於所述範圍內組合不同孔徑的第一過濾器。此處的孔徑可參照過濾器廠商的標稱值。作為市售的過濾器,例如可自日本頗爾(PALL)股份有限公司、愛多邦得科(Advantec)東洋股份有限公司、日本英特格(Entegris)股份有限公司(原日本密科裏(Mykrolis)股份有限公司)或北澤微濾器(Kitz Microfilter)股份有限公司等所提供的各種過濾器中選擇。<Preparation of Temporary Adhesive Composition> The temporary adhesive composition used in the present invention can be prepared by mixing the above components. The mixing of the components is usually carried out in the range of 0 °C to 100 °C. Moreover, after mixing each component, it is preferable to filter by a filter, for example. Filtration can be carried out in multiple stages, or it can be repeated multiple times. Alternatively, the filtered liquid can be refiltered. The filter is not particularly limited as long as it is a filter used for filtration applications or the like. For example, a fluororesin such as polytetrafluoroethylene (PTFE), a polyamide resin such as nylon-6 or nylon-6,6, or a polyolefin resin such as polyethylene or polypropylene (polypropylene) may be used. A filter for raw materials such as density, ultra-high molecular weight polyolefin resin). Among these raw materials, polypropylene (containing high density polypropylene) and nylon are preferred. The pore diameter of the filter is, for example, suitably from about 0.003 μm to about 5.0 μm. By setting it as this range, it is possible to suppress the clogging of the filter, and it is possible to surely remove fine foreign matter such as impurities or aggregates contained in the composition. When using a filter, different filters can be combined. At this time, the filtration using the first filter may be performed only once, or may be performed twice or more. In the case where two or more filtrations are performed by combining different filters, it is preferred that the pore diameter after the second time is the same as the pore diameter of the first filtration or smaller than the pore diameter of the first filtration. In addition, a first filter of different pore sizes may also be combined within the range. The aperture here can be referred to the nominal value of the filter manufacturer. As a commercially available filter, for example, from PALL Co., Ltd., Advantec Toyo Co., Ltd., and Japan's Entegris Co., Ltd. (formerly Japan's Miikeri ( Choose from various filters offered by Mykrolis) or Kitz Microfilter Co., Ltd.
本發明中所獲得的半導體元件可使晶粒的溫度T1下的壓接前的位置與晶粒的溫度T1下的壓接後的位置的移動距離小於100 μm,進而可使所述移動距離小於50 μm,特別可使所述移動距離小於30 μm。關於下限值,理想為0 μm,但3 μm以上亦為足以實用的水準。 [實施例]The semiconductor element obtained in the present invention can make the moving distance of the position before the pressure bonding at the temperature T1 of the crystal grain and the position after the pressure contact at the temperature T1 of the crystal grain less than 100 μm, and the moving distance can be made smaller than 50 μm, in particular, the moving distance can be less than 30 μm. Regarding the lower limit value, it is preferably 0 μm, but 3 μm or more is also a practical level. [Examples]
以下,藉由實施例對本發明進一步進行具體說明,只要不超出本發明的主旨,則本發明並不限定於以下的實施例。再者,只要無特別說明,則「份」、「%」為質量基準。Hereinafter, the present invention will be specifically described by way of examples, and the present invention is not limited to the following examples, without departing from the spirit of the invention. In addition, unless otherwise indicated, "part" and "%" are the quality standards.
<暫時接著劑組成物的製備> 將以下的組成物混合,並使用具有5 μm孔徑的聚四氟乙烯製過濾器進行過濾,從而分別製備暫時接著劑組成物。 <<暫時接著劑組成物的成分>> ·表1所記載的樹脂 ·易璐諾斯(Irganox)1010(巴斯夫(BASF)製造): 1質量份 ·蘇米萊澤(Sumilizer)TP-D(住友化學(股)製造): 1質量份 ·美佳法(Megafac)F-557(迪愛生(DIC)(股)製造): 0.3質量份 ·溶媒(第三丁基苯(東洋合成工業(股)製造)): 表1所記載的質量份<Preparation of Temporary Adhesive Composition> The following compositions were mixed and filtered using a filter made of polytetrafluoroethylene having a pore diameter of 5 μm to prepare a temporary adhesive composition, respectively. <<Component of temporary adhesive composition>> - The resin described in Table 1 Irganox 1010 (manufactured by BASF): 1 part by mass · Sumilizer TP-D ( Sumitomo Chemical Co., Ltd.): 1 part by mass · Megafac F-557 (manufactured by Diane Health (DIC) Co., Ltd.): 0.3 parts by mass · Solvent (Third butylbenzene (Toyo Synthetic Industry Co., Ltd.) Manufacture)): Parts by mass as shown in Table 1
將各實施例中使用的暫時接著劑組成物的組成示於以下。 [表1]
<熔融黏度的測定> 暫時接著劑層的熔融黏度是依據以下的方法來測定。 使暫時接著劑組成物於直徑20 mm的PFA製培養皿中流延並進行3天乾燥,然後於190℃下進行5分鐘加熱,自培養皿進行回收,藉此獲得直徑20 mm、厚度300 μm的評價用樣品。使用ARES-RDA(TA儀器(TA Instruments)公司製造),於昇溫速度10℃/min、測定頻率:10 Hz、T1及T2的溫度下對評價用樣品進行測定。<Measurement of Melt Viscosity> The melt viscosity of the temporary adhesive layer was measured by the following method. The temporary adhesive composition was cast in a PFA dish of 20 mm in diameter and dried for 3 days, then heated at 190 ° C for 5 minutes, and recovered from the dish to obtain a diameter of 20 mm and a thickness of 300 μm. Sample for evaluation. The sample for evaluation was measured at a temperature increase rate of 10 ° C/min and a measurement frequency of 10 Hz, T1 and T2 using ARES-RDA (manufactured by TA Instruments).
<實施例1~實施例9、實施例12~實施例15及比較例1~比較例3> 作為載體基板,使用直徑12吋的矽晶圓(1吋為2.54 cm),於其表面上,利用晶圓接合裝置(賽奈普斯(Synapse)V、東京電子(Tokyo Electron)(股)製造)形成暫時接著劑層。具體而言,將所述暫時接著劑組成物塗佈於載體基板,並使用加熱板,以160℃加熱3分鐘,進而以190℃加熱3分鐘,藉此於載體基板上形成暫時接著劑層。此時的暫時接著劑的膜厚為40 μm。 於載體基板的形成有暫時接著劑層的表面上,對於作為晶粒的經切割為10 mm×10 mm的矽晶圓(厚度775 μm),將倒裝晶片接合機(flip chip bonder)(TFC-3000,芝浦機電(SHIBAURA MECHATRONICS)(股)製造),於表3所記載的溫度(T1)下,以對晶粒施加的壓力成為0.1 MPa的方式進行2秒壓接。<Example 1 to Example 9, Example 12 to Example 15, and Comparative Example 1 to Comparative Example 3> As a carrier substrate, a crucible wafer having a diameter of 12 Å (1 吋 is 2.54 cm) was used, and on the surface thereof, A temporary adhesive layer was formed by a wafer bonding apparatus (Synapse V, manufactured by Tokyo Electron Co., Ltd.). Specifically, the temporary adhesive composition was applied onto a carrier substrate, and heated at 160 ° C for 3 minutes using a hot plate, and further heated at 190 ° C for 3 minutes to form a temporary adhesive layer on the carrier substrate. The film thickness of the temporary adhesive at this time was 40 μm. On the surface of the carrier substrate on which the temporary adhesive layer is formed, a flip chip bonder (TFC) is used for a germanium wafer (thickness 775 μm) which is cut into 10 mm × 10 mm as a crystal grain. -3000, manufactured by Shibaura MECHATRONICS Co., Ltd., at a temperature (T1) shown in Table 3, was pressed for 2 seconds so that the pressure applied to the crystal grains was 0.1 MPa.
關於所獲得的積層體,如下述般對晶粒移位進行評價。 <評價1:晶粒移位> 對於所述積層體中的晶粒的頂點的移動距離(|頂點的座標的設計值-安裝後的頂點的座標|),使用晶圓自動外觀檢查裝置(神鷹(Condor)203,康代(Camtek)公司製造)對全部晶粒的四個頂點進行測定,藉由以下基準對每一個晶粒的頂點的移動距離的總和進行評價。再者,設計值的頂點的座標與壓接前的頂點的座標一致,且所謂安裝後的頂點的座標,是指壓接後的頂點的座標。 A:小於30 μm B:30 μm以上且小於50 μm C:50 μm以上且小於100 μm D:100 μm以上Regarding the obtained laminate, the grain displacement was evaluated as follows. <Evaluation 1: Grain Shift> For the moving distance of the apex of the crystal grains in the laminated body (the design value of the coordinates of the vertex - the coordinate of the vertex after mounting |), the wafer automatic visual inspection device (God) is used. Condor 203, manufactured by Camtek Co., Ltd., measured the four vertices of all the crystal grains, and evaluated the sum of the moving distances of the vertices of each crystal grain by the following reference. Furthermore, the coordinates of the vertices of the design values coincide with the coordinates of the vertices before the crimping, and the coordinates of the vertices after the mounting refer to the coordinates of the vertices after the crimping. A: less than 30 μm B: 30 μm or more and less than 50 μm C: 50 μm or more and less than 100 μm D: 100 μm or more
於所述積層體的設置有晶粒的表面上,進而使用壓縮成型成型機(WCM-300,山田尖端科技(APIC YAMADA)(股)製造),於表3所記載的溫度(T2)條件下,以80´105
Pa的壓力對作為成型樹脂組成物的半導體密封用環氧樹脂成形材料(蘇米康(sumikon)EME-G770H、住友貝克萊特(Sumitomo Bakelite)(股)製造)進行90秒壓縮成型。其後進而以175℃加熱6小時。 再者,實施例10中使用CEL-9200 HF10(日立化成(股)製造)作為成型樹脂組成物,實施例11中使用KE-300TS-1(京瓷化學(Kyocera Chemical)(股))作為成型樹脂組成物,除此以外,與實施例1同樣地進行成型。 [表3]
關於所獲得的積層體,如下所述般對翹曲進行評價。 <評價2:翹曲> 將膜厚感測器(基恩士(KEYENCE)(股)製造、ST-T80)固定於X-Y平台而對所述積層體中的翹曲進行測定。於測定中,規定X方向(基板面方向)及Y方向(基板面方向中與X方向正交的方向),X方向中每隔0.1 mm進行測定,Y方向中每隔1 mm進行測定。 將翹曲定義為所有測定點的最大值與最小值的差,並藉由以下的基準進行評價。 A:小於250 μm B:250 μm以上且小於500 μm C:500 μm以上且小於750 μm D:1000 μm以上Regarding the obtained laminate, the warpage was evaluated as described below. <Evaluation 2: Warpage> The warpage in the laminate was measured by fixing a film thickness sensor (manufactured by KEYENCE Co., Ltd., ST-T80) to an X-Y stage. In the measurement, the X direction (substrate surface direction) and the Y direction (the direction orthogonal to the X direction in the substrate surface direction) are defined, and the measurement is performed every 0.1 mm in the X direction, and every 1 mm in the Y direction. The warpage was defined as the difference between the maximum value and the minimum value of all the measurement points, and was evaluated by the following criteria. A: less than 250 μm B: 250 μm or more and less than 500 μm C: 500 μm or more and less than 750 μm D: 1000 μm or more
<評價3:剝離性> 將所述所獲得的積層體的成型層設為下側,使用切割膠帶安裝機將下側的矽晶圓與切割框架一起固定於切割膠帶中央。其後,利用晶圓接合裝置(東京電子(Tokyo Electron)製造、賽奈普斯(Synapse)Z)於25℃下,將上側的矽晶圓向相對於下側的成型層為垂直的方向以50 mm/min的速度拉起而將上側的矽晶圓剝離。其次,於25℃下,將積層於成型樹脂面上的暫時接著劑層向垂直方向以50 mm/min的速度拉起,藉由以下的基準對此時的剝離力進行評價。再者,剝離力的測定是使用測力計(依夢達(Imada)製造,ZTS-100N)來進行。 A:能夠以小於30 N剝離 B:能夠以30 N以上且小於50 N剝離 C:能夠以50 N以上剝離 D:無法剝離<Evaluation 3: Peelability> The formed layer of the obtained laminate was set to the lower side, and the lower crucible wafer was fixed to the center of the dicing tape together with the dicing frame using a dicing tape mounting machine. Thereafter, the upper side germanium wafer was oriented in a vertical direction with respect to the lower molding layer at 25 ° C by a wafer bonding apparatus (manufactured by Tokyo Electron Co., Ltd., Synapse Z). The speed of 50 mm/min was pulled up to peel off the upper wafer. Next, the temporary adhesive layer laminated on the surface of the molded resin was pulled up at a speed of 50 mm/min in the vertical direction at 25 ° C, and the peeling force at this time was evaluated by the following criteria. Further, the peeling force was measured using a dynamometer (manufactured by Imada, ZTS-100N). A: peeling at less than 30 N B: peeling at 30 N or more and less than 50 N C: peeling at 50 N or more D: peeling is impossible
[表4]
10‧‧‧載體基板
20‧‧‧暫時接著劑層
30‧‧‧晶粒
40‧‧‧成型層10‧‧‧ Carrier substrate
20‧‧‧ Temporary adhesive layer
30‧‧‧ grain
40‧‧‧Forming layer
圖1的(A1)~圖1的(A5)為表示本發明的半導體元件的製造方法的實施形態的概略圖。(A1) to (A5) of FIG. 1 are schematic views showing an embodiment of a method of manufacturing a semiconductor device of the present invention.
10‧‧‧載體基板 10‧‧‧ Carrier substrate
20‧‧‧暫時接著劑層 20‧‧‧ Temporary adhesive layer
30‧‧‧晶粒 30‧‧‧ grain
40‧‧‧成型層 40‧‧‧Forming layer
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WO2019181716A1 (en) * | 2018-03-20 | 2019-09-26 | 富士フイルム株式会社 | Temporary adhesive composition-containing container filled with temporary adhesive composition, method for filling and storing said composition, and method for manufacturing said container |
JPWO2020255904A1 (en) * | 2019-06-20 | 2020-12-24 | ||
JP7447493B2 (en) | 2020-01-07 | 2024-03-12 | 株式会社レゾナック | Resin composition for temporary fixing, resin film, and method for manufacturing semiconductor device |
CN113497174B (en) * | 2020-03-20 | 2023-05-23 | 东莞市中麒光电技术有限公司 | Small-spacing LED display screen module and manufacturing method thereof |
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JPH10178145A (en) * | 1996-12-19 | 1998-06-30 | Texas Instr Japan Ltd | Semiconductor device and its manufacturing method and insulation substrate for semiconductor device |
US20090075429A1 (en) * | 2005-04-27 | 2009-03-19 | Lintec Corporation | Sheet-Like Underfill Material and Semiconductor Device Manufacturing Method |
JP2011060807A (en) * | 2009-09-07 | 2011-03-24 | Renesas Electronics Corp | Semiconductor chip with conductive adhesive layer and method of manufacturing the same, and method of manufacturing semiconductor device |
JP2012069919A (en) * | 2010-08-25 | 2012-04-05 | Toshiba Corp | Manufacturing method of semiconductor device |
JP2012129326A (en) * | 2010-12-14 | 2012-07-05 | Sumitomo Bakelite Co Ltd | Electronic device manufacturing method and electronic device package manufacturing method |
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JP6140441B2 (en) * | 2012-12-27 | 2017-05-31 | 富士フイルム株式会社 | Temporary adhesive for manufacturing semiconductor device, adhesive support using the same, and method for manufacturing semiconductor device |
JP6188495B2 (en) * | 2013-08-30 | 2017-08-30 | 富士フイルム株式会社 | Laminate and its application |
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JPWO2017057355A1 (en) | 2018-06-14 |
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