JP7447493B2 - Resin composition for temporary fixing, resin film, and method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a resin composition for temporary fixing, a resin film, and a method for manufacturing a semiconductor device.

In order to increase the density and performance of semiconductor devices, a mounting method has been proposed in which semiconductor chips with different performance are mixed into a single semiconductor device, and high-density interconnect technology between chips that is excellent in cost is becoming important. (For example, see Patent Document 1).

Package-on-package, which connects different semiconductor chips by stacking them on a semiconductor chip by flip-chip mounting, is widely used in smartphones and tablet terminals (for example, see Non-Patent Document 1 and Non-Patent Document 2).
Furthermore, as forms for high-density packaging, packaging technology using organic substrates with high-density wiring (organic interposer), fan-out packaging technology (FO-WLP) with through-molded vias (TMV), silicon Alternatively, a packaging technology using a glass interposer, a packaging technology using through silicon vias (TSV), a packaging technology using a semiconductor chip embedded in a substrate for transmission between chips, etc. have been proposed.

When flip-chip mounting different semiconductor chips onto a semiconductor chip, a method is currently used in which a semiconductor device is manufactured by temporarily fixing a lowermost semiconductor chip to a support molded with a resin composition. (For example, see Patent Document 2)

Special Publication No. 2012-529770 JP2018-93162A

However, when fixing a semiconductor chip onto a resin composition, if the resin composition has low viscosity and low elasticity, the resin composition will creep up the side of the chip, and conversely, if the resin composition is too high in viscosity and elasticity, the resin composition will There are concerns that the reliability of semiconductor devices may be adversely affected due to the inability to protect the electronic elements of semiconductor devices.

The present invention was made in view of the above circumstances, and it is possible to embed a semiconductor chip with an electronic element without voids, and prevent the material for temporarily fixing the semiconductor chip from climbing up the side surface of the semiconductor chip. An object of the present invention is to provide a resin composition and a resin film for temporary fixing, which are used in the manufacture of semiconductor devices that do not have the same structure.

A temporary fixing resin composition having a shear viscosity at 100°C of 9,000 to 30,000 Pa·s in the uncured state before curing and a storage modulus of 1.5 to 20 MPa at 270°C of the cured product obtained after curing is used as a semiconductor. By applying it to the resin layer included in the temporary fixing material layer that is formed as a layer constituting the chip temporary fixing member, when embedding the semiconductor chip, it can be embedded without voids between the electronic element and the temporary fixing material layer. To provide a temporarily fixing resin composition used for manufacturing a semiconductor device, which can be mounted without resin creeping up on the side surface of the chip when the fixing resin composition is cured and flip-chip mounting is performed on a semiconductor chip.

The present invention relates to a temporary fixing resin composition contained in a resin layer constituting a temporary fixing material layer for temporarily fixing a semiconductor device to a support, the resin composition containing a thermoplastic resin and a curable resin component. A temporary fixing resin composition having a shear viscosity at 100°C of 9000 to 30000 MPa in an uncured state before curing, and a storage modulus of elasticity at 270°C of a cured product obtained after curing of 1.5 to 20 MPa. provide something.

The temporary fixing resin composition is a resin composition containing a thermoplastic resin and a thermosetting resin component, and may further contain an antioxidant and a curing accelerator.

Moreover, the present invention provides a resin film for temporary fixing, which has a support film and a resin layer formed on the support film and containing the resin composition for temporary fixation. The temporary fixing resin film may include a light absorption layer and a resin layer containing the temporary fixing resin composition, which is laminated and formed on the support film.

The temporary fixing resin layer may be formed 20 to 50 μm thicker than the height of the convex portion of the electronic element (external connection member and wiring layer) on the surface of the semiconductor chip.

As a semiconductor device manufacturing method to which the temporary fixing resin film is applied,
forming a temporary fixing material layer having the resin layer on the support using the temporary fixing resin composition or the temporary fixing resin film;
a step of mounting a semiconductor chip having an external connection member and a wiring layer on the surface on the temporary fixing material layer;
curing the temporary fixing material layer with heat or light;
processing the semiconductor chip;
manufacturing a semiconductor device by collectively sealing the semiconductor chip mounted on the support member or the processed semiconductor chip;
separating the semiconductor device from the support;
A method for manufacturing a semiconductor device is provided, which includes a step of separating the temporary fixing material layer from the semiconductor device.

In the method for manufacturing a semiconductor device, at least one of a release layer and a light absorption layer may be formed on the support member.

The semiconductor device and the support member can be separated by irradiating light onto the temporary fixing material layer having at least a light absorption layer so that the light absorption layer absorbs light and generates heat. preferable.

The light in the separation step may include at least infrared light. The light source may be a xenon lamp.

The step of separating the semiconductor device from the support member may be a step of irradiating the temporary fixing material layer with light through the support member.

According to the present invention, the temporary fixing resin composition is useful as a temporary fixing material because it suppresses creeping up to the side surface of the chip and can reliably protect electronic elements (external connection terminals and wiring layers) on the chip surface. It is possible to provide a temporary fixing resin film having the resin composition and the temporary fixing resin composition.
Further, according to the present invention, it is possible to provide a method for manufacturing a semiconductor device in which a temporarily fixed semiconductor device can be easily separated from a support member.

FIG. 1 is a schematic cross-sectional view for explaining one embodiment of the method for manufacturing a semiconductor device of the present invention, and FIGS. 1(a) and (b) are schematic cross-sectional views showing each step. FIGS. 2A, 2B, and 2C are schematic cross-sectional views showing embodiments of a temporary fixing material precursor layer having a light absorption layer. 3(a), (b), (c), and (d) are schematic cross-sectional views showing one embodiment of a laminate formed using the temporary fixing material precursor layer shown in FIG. 2(a). It is. FIG. 4 is a schematic cross-sectional view for explaining one embodiment of the method for manufacturing a semiconductor device of the present invention using the laminate shown in FIG. 3(d), and FIGS. 4(a) and 4(b) are FIG. 3 is a schematic cross-sectional view showing each step. FIG. 5 is a schematic cross-sectional view for explaining another embodiment of the method for manufacturing the laminate shown in FIG. FIG.

Embodiments of the present invention will be described below with appropriate reference to the drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

The same applies to the numerical values and their ranges in this specification, and they do not limit the present invention. In this specification, a numerical range indicated using "-" indicates a range that includes the numerical values written before and after "-" as the minimum and maximum values, respectively. In the numerical ranges described step by step in this specification, the upper limit value or lower limit value described in one numerical range may be replaced with the upper limit value or lower limit value of another numerical range described step by step. good. Further, in the numerical ranges described in this specification, the upper limit or lower limit of the numerical range may be replaced with the value shown in the Examples.

As used herein, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid. The same applies to other similar expressions such as (meth)acrylate and (meth)acryloyl groups.

[Method for manufacturing semiconductor device]
The method for manufacturing a semiconductor device according to the present embodiment includes a support member, a temporary fixing material layer that absorbs light and generates heat (hereinafter sometimes simply referred to as a "temporary fixing material layer"), and a semiconductor device. The present invention includes a preparation step for preparing a laminate in which the laminates are stacked in this order, and a separation step for separating the semiconductor device from the support member by irradiating the temporary fixing material layer in the laminate with light.

<Laminated body preparation process>
FIG. 1 is a schematic cross-sectional view for explaining one embodiment of the method for manufacturing a semiconductor device of the present invention, and FIGS. 1(a) and (b) are schematic cross-sectional views showing each step. As shown in FIG. 1(a), in the laminate preparation step, a laminate 100 in which a support member 10, a temporary fixing material layer 30c, and a semiconductor device (including a semiconductor chip) 40 are stacked in this order is assembled. prepare.

The support member 10 is not particularly limited, and may be, for example, a glass substrate, a resin substrate, a silicon wafer, a metal thin film, or the like. The support member 10 may be a substrate that does not prevent light transmission, and may be a glass substrate.

The thickness of the support member 10 may be, for example, 0.1 to 2.0 mm. When the thickness is 0.1 mm or more, handling tends to be easy, and when the thickness is 2.0 mm or less, material costs tend to be suppressed.

The temporary fixing material layer 30c is a layer for temporarily fixing the support member 10 and the semiconductor device 40, and is a layer that absorbs light and generates heat when irradiated with light. The light to be absorbed in the temporary fixing material layer 30c may be light including infrared light, visible light, or ultraviolet light.
Since the light absorption layer described below can efficiently generate heat, the light to be absorbed in the temporary fixing material layer 30c may include at least infrared light. Further, the temporary fixing material layer 30c may be a layer that absorbs infrared light and generates heat when it is irradiated with light including infrared light.

In the laminate 100 shown in FIG. 1A, for example, a temporary fixing material precursor layer is formed on a support member, a semiconductor device is arranged on the temporary fixing material precursor layer, and a semiconductor device is arranged on the temporary fixing material precursor layer. It can be produced by curing a curable resin component to form a temporary fixing material layer. In this way, the temporary fixing material precursor layer has a resin layer containing at least a curable resin component, and is formed as a layer in which the cured resin component is in an uncured state before curing.

The temporary fixing material precursor layer may include a resin layer containing the curable resin component and a light absorption layer that absorbs light and generates heat. FIGS. 2A, 2B, and 2C are schematic cross-sectional views showing embodiments of a temporary fixing material precursor layer having a light absorption layer. The structure of the temporary fixing material precursor layer 30 is not particularly limited as long as it has a light absorption layer 32 and a resin layer 34. A configuration in which the resin layer 34 and the light absorption layer 32 are arranged in this order from the supporting member 10 side (FIG. 2(b)), a structure in which the resin layer 34 and the light absorption layer 32 are arranged in this order from the support member 10 side, and the light absorption layer 32 and the resin layer 34 and a light absorption layer 32 in this order (FIG. 2(c)). Among these, the temporary fixing material precursor layer 30 may have a structure having a light absorption layer 32 and a resin layer 34 in this order from the support member 10 side (FIG. 2(a)). Below, an embodiment using the temporary fixing material precursor layer 30 having the configuration shown in FIG. 2(a) will be mainly described in detail.

One embodiment of the light absorption layer 32 is a layer (hereinafter sometimes referred to as a "conductor layer") made of a conductor (hereinafter sometimes simply referred to as a "conductor") that absorbs light and generates heat. ). The conductor constituting such a conductor layer is not particularly limited as long as it absorbs light and generates heat, but may be a conductor that absorbs infrared light and generates heat. Examples of the conductor include metals such as chromium, copper, titanium, silver, platinum, and gold, alloys such as nickel-chromium, stainless steel, and copper-zinc, indium tin oxide (ITO), zinc oxide, and niobium oxide. Examples include carbon materials such as metal oxides and conductive carbon. These may be used alone or in combination of two or more. Among these, the conductor may be chromium, titanium, copper, aluminum, silver, gold, platinum, or carbon.

The light absorption layer 32 may be composed of a plurality of conductor layers. Such a light absorption layer includes, for example, a first conductor layer provided on the support member 10 and a second conductor layer provided on the opposite side of the support member 10 of the first conductor layer. Examples include a light absorption layer composed of a layer and a light absorbing layer. The conductor in the first conductor layer may be titanium from the viewpoints of adhesion to the support member (eg, glass), film formability, thermal conductivity, low heat capacity, and the like. The conductor in the second conductor layer may be copper, aluminum, silver, gold, or platinum from the viewpoint of high expansion coefficient, high thermal conductivity, etc. Among these, copper or aluminum is preferable.

The light absorption layer 32 is formed by attaching these conductors to the supporting member 10 by physical vapor deposition (PVD) such as vacuum deposition or sputtering, or chemical vapor deposition (CVD) such as electrolytic plating, electroless plating, or plasma chemical vapor deposition. can be formed directly. Among these, the conductor layer may be formed using physical vapor deposition, sputtering, or vacuum evaporation, since the conductor layer can be formed over a large area.

The thickness of one embodiment of the light absorption layer 32 may be 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm (0.05 to 3 μm) from the viewpoint of easy peelability. When the light absorption layer 32 is composed of a first conductor layer and a second conductor layer, the thickness of the first conductor layer is 1 to 1000 nm, 5 to 500 nm, or 10 to 100 nm. The thickness of the second conductor layer may be 1-5000 nm, 10-500 nm, or 50-200 nm.

Another embodiment of the light absorption layer 32 is a layer containing a cured product of a curable resin composition containing conductive particles that absorb light and generate heat. The curable resin composition may contain conductive particles and a curable resin component. The curable resin component may be a curable resin component that is cured by heat or light. The curable resin component is not particularly limited, and includes, for example, those exemplified as the curable resin component in the resin layer described below.

The conductive particles are not particularly limited as long as they absorb light and generate heat, but may be particles that absorb infrared light and generate heat. Examples of conductive particles include silver powder, copper powder, nickel powder, aluminum powder, chromium powder, iron powder, brass powder, tin powder, titanium alloy, gold powder, copper alloy powder, copper oxide powder, silver oxide powder, and tin oxide powder. , and conductive carbon (carbon) powder. The conductive particles may be at least one kind selected from the group consisting of silver powder, copper powder, silver oxide powder, copper oxide powder, and carbon powder from the viewpoint of ease of handling and safety. Further, the conductive particles may be particles having a core made of resin or metal and plated with a metal such as nickel, gold, or silver. Furthermore, the conductive particles may be particles whose surfaces have been treated with a surface treatment agent from the viewpoint of dispersibility with a solvent.

The content of the conductive particles may be 10 to 90 parts by mass based on 100 parts by mass of the total amount of components other than the conductive particles of the curable resin composition. Note that the components other than the conductive particles of the curable resin composition do not include the organic solvent described below. The content of the conductive particles may be 15 parts by mass or more, 20 parts by mass or more, or 25 parts by mass or more. The content of the conductive particles may be 80 parts by mass or less or 50 parts by mass or less.

The curable resin composition may contain a thermosetting resin, a curing agent, and a curing accelerator.
The content of the thermosetting resin may be 10 to 90 parts by mass based on 100 parts by mass of the total amount of components other than the conductive particles of the curable resin composition. The content of the curing agent and curing accelerator may be 0.01 to 5 parts by mass based on 100 parts by mass of the total amount of thermosetting resin.

The light absorption layer 32 can be formed from a curable resin composition containing conductive particles that absorb light and generate heat. The curable resin composition may be used as a varnish of the curable resin composition diluted with an organic solvent. Examples of the organic solvent include acetone, ethyl acetate, butyl acetate, methyl ethyl ketone (MEK), and the like. These organic solvents may be used alone or in combination of two or more. The concentration of solid components in the varnish may be from 10 to 80% by weight, based on the total weight of the varnish.

The light absorption layer 32 can be formed by directly applying a curable resin composition to the support member 10. When using a varnish made of a curable resin composition diluted with an organic solvent, it can be formed by applying the curable resin composition to the support member 10 and removing the solvent by heating and drying.

The thickness of the light absorption layer 32 in other embodiments may be 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm (0.05 to 3 μm) from the viewpoint of easy peelability.

Subsequently, a resin layer 34 is formed on the light absorption layer 32.

The resin layer 34 is a layer that does not contain conductive particles, but contains a curable resin component that is cured by heat or light. The resin layer 34 is a layer containing a curable resin component, and the storage modulus at 270° C. of a cured product obtained after curing the curable resin component is 1.5 to 20 MPa. The curable resin component may include a hydrocarbon resin.

The hydrocarbon resin used in this embodiment is a resin whose main skeleton is composed of hydrocarbon, and falls under the category of thermoplastic resin. Examples of such hydrocarbon resins include ethylene/propylene copolymer, ethylene/1-butene copolymer, ethylene/propylene/1-butene copolymer elastomer, ethylene/1-hexene copolymer, and ethylene/1-hexene copolymer. 1-octene copolymer, ethylene/styrene copolymer, ethylene/norbornene copolymer, propylene/1-butene copolymer, ethylene/propylene/non-conjugated diene copolymer, ethylene/1-butene/non-conjugated diene copolymer Copolymer, ethylene/propylene/1-butene/non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene/butadiene/styrene block copolymer (SBS), styrene/isoprene/styrene block copolymer (SIS), Examples include styrene/ethylene/butylene/styrene block copolymer (SEBS), styrene/ethylene/propylene/styrene block copolymer (SEPS), and the like. These hydrocarbon resins may be subjected to hydrogenation treatment. Further, these hydrocarbon resins may be carboxy-modified with maleic anhydride or the like. Among these, the hydrocarbon resin may include a hydrocarbon resin containing monomer units derived from styrene (styrenic resin), and may include a styrene-ethylene-butylene-styrene block copolymer (SEBS). Good too.

The Tg of the hydrocarbon resin may be -100 to 500°C, -50 to 300°C, or -50 to 50°C. When the Tg of the hydrocarbon resin is 500° C. or lower, when a film-like temporary fixing material is formed, flexibility is easily ensured and low-temperature adhesion properties tend to be improved.
If the Tg of the hydrocarbon resin is -100°C or higher, when a film-like temporary fixing material is formed, the flexibility will be too high, which will inhibit the resin from creeping up when mounting a semiconductor chip and reduce the peelability. It tends to be suppressed.

The Tg of a hydrocarbon resin is the midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the hydrocarbon resin is calculated by measuring the change in calorific value under the conditions of a heating rate of 10°C/min and a measurement temperature of -80 to 80°C, and calculating it by a method based on JIS K 7121. is the transition temperature.

The weight average molecular weight (Mw) of the hydrocarbon resin may be 10,000 to 5,000,000 or 100,000 to 2,000,000. When the weight average molecular weight is 10,000 or more, the heat resistance of the temporary fixing material layer to be formed tends to be easily ensured. When the weight average molecular weight is 5,000,000 or less, when a film-like temporary fixing material layer is formed, a decrease in flow and a decrease in stickability tend to be easily suppressed. Note that the weight average molecular weight is a polystyrene equivalent value obtained by gel permeation chromatography (GPC) using a standard polystyrene calibration curve.

The content of the hydrocarbon resin can be appropriately set so that the cured product of the curable resin component has a storage modulus at 25° C. of 5 to 100 MPa. The content of the hydrocarbon resin may be, for example, 40 to 90 parts by weight based on 100 parts by weight of the total weight of the curable resin component. The content of the hydrocarbon resin may be 50 parts by mass or more or 60 parts by mass or more. The content of the hydrocarbon resin may be 85 parts by mass or less or 80 parts by mass or less. When the content of the hydrocarbon resin is within the above range, the temporary fixing material layer tends to have better thin film formability and flatness.

The curable resin component contained in the resin layer may include a thermosetting resin. The thermosetting resin is not particularly limited as long as it is a resin that is cured by heat. Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin. These may be used alone or in combination of two or more. Among these, the thermosetting resin may be an epoxy resin because it is superior in heat resistance, workability, and reliability. When using an epoxy resin as the thermosetting resin, it may be used in combination with an epoxy resin curing agent.

The epoxy resin is not particularly limited as long as it hardens and has heat resistance. Examples of the epoxy resin include bifunctional epoxy resins such as bisphenol A epoxy, phenol novolak epoxy resins, and novolac epoxy resins such as cresol novolac epoxy resins. Further, the epoxy resin may be a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocycle-containing epoxy resin, or an alicyclic epoxy resin. In addition, by selecting an epoxy group with a low functional group equivalent, the storage modulus at high temperatures after curing will be high, and the resin will not become viscous even when high temperatures and pressures are applied during semiconductor chip processing. This leads to suppression of resin creeping up.

When using an epoxy resin as the thermosetting resin, the curable resin component may contain an epoxy resin curing agent. As the epoxy resin curing agent, commonly used known curing agents can be used. Examples of epoxy resin curing agents include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols having two or more phenolic hydroxyl groups in one molecule, such as bisphenol A, bisphenol F, and bisphenol S, and phenol novolacs. Examples include phenol resins such as resins, bisphenol A novolac resins, cresol novolak resins, and phenol aralkyl resins.

The total content of the thermosetting resin and the curing agent may be 10 to 60 parts by weight based on 100 parts by weight of the total weight of the curable resin component. The total content of the thermosetting resin and the curing agent may be 15 parts by mass or more or 20 parts by mass or more. The total content of the thermosetting resin and the curing agent may be 50 parts by mass or less or 40 parts by mass or less. When the total content of the thermosetting resin and the curing agent is within the above range, the temporary fixing material layer tends to have better thin film formability and flatness. When the total content of the thermosetting resin and curing agent is within the above range, heat resistance tends to be better.

The curable resin component may further contain a curing accelerator. Examples of the curing accelerator include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo[5, 4,0] undecene-7-tetraphenylborate and the like. These may be used alone or in combination of two or more.

The content of the curing accelerator may be 0.01 to 5 parts by mass based on 100 parts by mass of the total amount of the thermosetting resin and curing agent. When the content of the curing accelerator is within the above range, the curability tends to improve and the heat resistance tends to be better.

The curable resin component may further contain a polymerizable monomer and a polymerization initiator. The polymerizable monomer is not particularly limited as long as it can be polymerized by heating or irradiation with ultraviolet light or the like. The polymerizable monomer may be, for example, a compound having a polymerizable functional group such as an ethylenically unsaturated group from the viewpoint of material selectivity and availability. Examples of the polymerizable monomer include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinylamide, and arylated vinyl. Among these, the polymerizable monomer may be (meth)acrylate. The (meth)acrylate may be monofunctional (monofunctional), bifunctional, or trifunctional or more functional, but from the viewpoint of obtaining sufficient curability, it may be a difunctional or more functional (meth)acrylate. good.

Examples of monofunctional (meth)acrylates include (meth)acrylic acid; methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxy Ethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene Aliphatic (meth)acrylates such as glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate; benzyl (meth)acrylate; Phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o- Phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxypolyethylene glycol (meth)acrylate, phenoxypolypropylene glycol (meth)acrylate, 2 -Hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, 2-hydroxy Examples include aromatic (meth)acrylates such as -3-(2-naphthoxy)propyl (meth)acrylate.

Examples of bifunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, and polyethylene glycol di(meth)acrylate. Acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate (meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di( meth)acrylate, 1,6-hexanediol di(meth)acrylate, 2-butyl-2-ethyl-1,3-propanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1, Aliphatic (meth)acrylate such as 10-decanediol di(meth)acrylate, glycerin di(meth)acrylate, tricyclodecane dimethanol(meth)acrylate, and ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate. ) acrylate; ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate; (meth)acrylate, ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, ethoxylated propoxylated fluorene type di(meth)acrylate, etc. Examples include aromatic (meth)acrylates.

Examples of trifunctional or higher polyfunctional (meth)acrylates include trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, and ethoxylated propoxylated Trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, pentaerythritol tri(meth)acrylate Erythritol tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, dipentaerythritol hexa( Aliphatic (meth)acrylates such as meth)acrylates; aromatic epoxy (meth)acrylates such as phenol novolac type epoxy (meth)acrylates and cresol novolac type epoxy (meth)acrylates.

These (meth)acrylates may be used alone or in combination of two or more. Furthermore, these (meth)acrylates may be used in combination with other polymerizable monomers.

The content of the polymerizable monomer may be 10 to 60 parts by weight based on 100 parts by weight of the total weight of the curable resin component.

The polymerization initiator is not particularly limited as long as it can initiate polymerization by heating or irradiation with ultraviolet light or the like. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.

Examples of the thermal radical polymerization initiator include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; t-butyl peroxy pivalate, t-hexyl peroxy pivalate, 1, 1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexylperoxy-2-ethyl Hexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-hexylperoxyisopropyl monocarbonate, t-butylperoxy-3,5,5-trimethylhexano ate, t-butylperoxylaurylate, t-butylperoxyisopropyl monocarbonate, t-butylperoxy-2-ethylhexyl monocarbonate, t-butylperoxybenzoate, t-hexylperoxybenzoate, 2,5-dimethyl -2,5-bis(benzoylperoxy)hexane, peroxy esters such as t-butylperoxyacetate; 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvalero) nitrile), 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile), and other azo compounds.

Examples of the photoradical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; 1-hydroxycyclohexylphenyl ketone, and 2-hydroxy-2-methyl-1-phenylpropane. α-hydroxyketones such as -1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; bis(2,4,6-trimethyl Examples include phosphine oxides such as benzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

These thermal and photoradical polymerization initiators may be used alone or in combination of two or more.

The content of the polymerization initiator may be 0.01 to 5 parts by weight based on 100 parts by weight of the total amount of polymerizable monomers.

The curable resin component may further contain an insulating filler, a sensitizer, an antioxidant, etc. as other components.

The insulating filler is added for the purpose of imparting low thermal expansion and low hygroscopicity to the resin composition.
Examples of the insulating filler include nonmetallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramic. These insulating fillers may be used alone or in combination of two or more. From the viewpoint of dispersibility with a solvent, the insulating filler may be a particle whose surface is treated with a surface treatment agent. The surface treatment agent is not particularly limited, but a silane coupling agent or the like can be used.

The content of the insulating filler may be 5 to 20 parts by weight based on 100 parts by weight of the total weight of the curable resin component. When the content of the insulating filler is within the above range, heat resistance tends to be further improved without interfering with light transmission. Furthermore, when the content of the insulating filler is within the above range, it may also contribute to easy releasability.

Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4- Examples include isopropyl-9H-thioxanthene-9-one and 1-chloro-4-propoxythioxanthone.

The content of the sensitizer may be 0.01 to 10 parts by weight based on 100 parts by weight of the total weight of the curable resin component. When the content of the sensitizer is within the above range, it tends to have little influence on the properties and thin film properties of the curable resin component.

Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol, 2,2,6,6-tetramethylpiperidine-1-oxyl, 4- Examples include aminoxyl derivatives such as hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate.

The content of the antioxidant may be 0.1 to 10 parts by weight based on 100 parts by weight of the total weight of the curable resin component. When the content of the antioxidant is within the above range, it tends to suppress decomposition of the curable resin component and prevent contamination.

In this embodiment, a resin composition containing each curable resin component as described above is used as a temporary fixing resin composition. The temporary fixing resin composition of the present embodiment may have a shear viscosity of 9,000 to 30,000 Pa·s at 100°C in an uncured state before curing. By setting the shear viscosity of the temporary fixing resin composition before curing to 9,000 to 30,000 Pa·s at 100°C, it is possible to suppress the creeping up of the temporary fixing resin composition to the side surface of the semiconductor chip, and to prevent electrons on the chip surface. It is possible to improve the embeddability required to protect the elements (external connection members such as electrodes and wiring layers). The shear viscosity at 100° C. can be measured using, for example, a rotational viscoelasticity measuring device using a sample prepared by preparing a temporary fixing resin composition to a predetermined thickness.

Furthermore, the cured product obtained after curing the curable resin component contained in the temporary fixing resin composition (cured resin layer described below) has a storage modulus of 5 to 200 MPa at 25°C. The cured product of the curable resin component may have a storage modulus at 25°C of 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more, and 150 MPa or less, 100 MPa or less, 70 MPa or less, or 65 MPa or less. It's okay. The storage modulus at 25°C of the cured product of the curable resin component can be adjusted as appropriate, for example, by increasing the proportion of the hydrocarbon resin that is a thermoplastic resin, by applying a high Tg hydrocarbon resin, By adding an insulating filler or the like, the storage modulus at 25° C. of the cured product of the curable resin component can be improved. When the storage modulus at 25°C of the cured resin component is 5 MPa or more, handling properties are improved, chips, etc. can be easily temporarily fixed to the support member without deflection, cohesive failure is difficult to occur when peeled off, and there is no residue. tends to decrease. When the storage elastic modulus at 25° C. of the cured product of the curable resin component is 200 MPa or less, it tends to be possible to reduce misalignment when mounting a chip or the like on a support member. In addition, in this specification, the storage elastic modulus of the cured product of the curable resin component means the one measured by the curing method and measurement procedure described in Examples.

The cured product obtained after curing the curable resin component may have a storage modulus of 1.5 to 20 MPa at 270°C. The storage modulus of the cured product at 270° C. may be 15 MPa or less, 10 MPa or less, or 5 MPa or less. Here, the cured product refers to a product in which no exothermic peak accompanying curing is observed in suggestive scanning calorimetry (DSC).

The resin layer 34 can be formed from a curable resin component containing a hydrocarbon resin that is a thermoplastic resin (a curable resin composition that does not contain conductive particles). The curable resin component may be diluted with a solvent and used as a varnish of the curable resin component. The solvent is not particularly limited as long as it can dissolve components other than the insulating filler. Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran and 1,4-dioxane. Cyclic ethers; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone; Examples include carbonic acid esters such as ethylene carbonate and propylene carbonate; amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These solvents may be used alone or in combination of two or more. Among these, the solvent may be toluene, xylene, heptane, or cyclohexane from the viewpoint of solubility and boiling point. The concentration of solid components in the varnish may be from 10 to 80% by weight, based on the total weight of the varnish.

A varnish containing a curable resin component can be prepared by mixing and kneading a curable resin component containing a hydrocarbon resin and a solvent. Mixing and kneading can be carried out using an appropriate combination of dispersing machines such as a conventional stirrer, a sieve machine, a three-roll mill, and a bead mill.

The resin layer 34 can be formed by directly applying a curable resin component to the light absorption layer 32. When using a varnish containing a curable resin component diluted with a solvent, it can be formed by applying the curable resin component to the light absorption layer 32 and removing the solvent by heating and drying.

Further, the resin layer 34 can also be formed by producing a curable resin component film made of a curable resin component. For example, a curable resin component film can be produced by applying a thermosetting varnish onto a support film and drying it by heating to remove volatile components such as solvents. By pressing or laminating the thus produced curable resin component film onto the light absorption layer 32 formed on the support base material 10, the temporary fixing material precursor layer 30 is formed on the support base material 10. is formed.

The thickness of the resin layer 34 can be adjusted according to the thickness of the temporary fixing material layer 30c. The thickness of the resin layer 34 is determined to be 20 to 20 mm thicker than the height of the convex part of the electronic element from the viewpoint of embedding the electronic element such as external connection members (including external connection terminals such as electrodes) and wiring layers formed on the semiconductor chip. It may be formed 50 μm thick. If the thickness of the resin layer 34 is 20 μm or more thicker than the height of the convex portion of the electronic device, it can prevent the electronic device from coming into contact with the support and being deformed, and if it is 50 μm or less, the unevenness of the semiconductor device can be sufficiently filled. Can be done.

In addition to using the above-mentioned curable resin component film, a laminated film for temporary fixing having a light absorption layer 32 and a resin layer 34 (hereinafter referred to as "temporarily fixing laminated film" together with the above-mentioned "thermosetting resin component film") is used. The temporary fixing material precursor layer 30 can also be formed by preparing a "resin film" in advance and laminating it so that the light absorption layer 32 and the support member 10 are in contact with each other.

The laminated structure of the light absorption layer 32 and the resin layer 34 in the temporary fixing resin film is not particularly limited as long as it has the light absorption layer 32 and the resin layer 34. 32 and a resin layer 34, a structure having a light absorption layer 32, a resin layer 34, and a light absorption layer 32 in this order, and the like. Among these, the temporary fixing resin film may have a structure including a light absorption layer 32 and a resin layer 34. The light absorption layer 32 may be a layer made of a conductor (conductor layer) or a layer containing conductive particles. The temporary fixing resin film may be provided on the support film, and a protective film may be provided on the surface opposite to the support film, if necessary.

The supporting film is not particularly limited, and includes, for example, polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, and polyester. Examples include ether sulfide, polyether sulfone, polyether ketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer films. These may be subjected to mold release treatment. The thickness of the support film may be, for example, from 3 to 250 μm.

Examples of the protective film include polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene. The thickness of the protective film may be, for example, 10 to 250 μm.

The thickness of the light absorption layer 32 in the temporary fixing resin film may be 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm (0.05 to 3 μm) from the viewpoint of easy peelability.

From the viewpoint of embedding external connection members (including external connection terminals such as electrodes) and electronic elements such as wiring layers formed on the semiconductor chip, the temporary fixing resin film should be 20 to 50 μm higher than the height of the convex part of the electronic element. It may be formed thickly. If the thickness of the temporary fixing resin film is 20 μm or more thicker than the height of the convex portion of the electronic device, it can prevent the electronic device from contacting the support and being deformed, and if it is 50 μm or less, it can prevent the semiconductor device from deforming. Irregularities can be sufficiently filled in. If there is no unevenness on the semiconductor chip, the thickness may be 0.1 to 100 μm. In the temporary fixing resin film, the light absorption layer functions as a burying layer for electronic elements in the same way as the resin layer.

The temporary fixing material precursor layer 30 having the configuration shown in FIG. 2(b) can be produced, for example, by forming the resin layer 34 on the support member 10 and then forming the light absorption layer 32. The temporary fixing material precursor layer 30 having the configuration shown in FIG. 2(c) can be produced, for example, by alternately forming a light absorption layer 32, a resin layer 34, and a light absorption layer 32 on the support member 10. can. These temporary fixing material precursor layers 30 may be made by preparing a temporary fixing laminated film having the above-mentioned structure in advance and laminating it on the support member 10.

The thickness of the temporary fixing material precursor layer 30 (the total thickness of the light absorption layer 32 and the resin layer 34) may be the same as the thickness of the temporary fixing resin film described above.

Next, a semiconductor device is placed on the prepared temporary fixing material precursor layer, and the curable resin component in the temporary fixing material precursor layer is cured to form a light absorbing layer and a cured resin product containing a cured product of the curable resin component. By forming a temporary fixing material layer having a temporary fixing material layer, a laminate in which the support member 10, the temporary fixing material layer 30c, and the semiconductor device 40 are stacked in this order is produced (FIG. 1(b)). 3(a), (b), (c), and (d) are schematic cross-sectional views showing one embodiment of a laminate formed using the temporary fixing material precursor layer shown in FIG. 2(a). It is.

The semiconductor device 40 may be a semiconductor wafer or a semiconductor chip obtained by cutting a semiconductor wafer into a predetermined size and dividing it into chips. When using a semiconductor chip as the semiconductor device 40, a plurality of semiconductor chips are usually used. The thickness of the semiconductor device 40 is 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm from the viewpoint of reducing the size and thickness of the semiconductor device as well as suppressing cracking during transportation, processing steps, etc. good. A semiconductor wafer or a semiconductor chip may be provided with a rewiring layer, a pattern layer, or an external connection member having external connection terminals.

The supporting member 10 provided with the produced temporary fixing material precursor layer 30 can be placed on a vacuum press machine or a vacuum laminator, and the semiconductor device 40 can be placed by being pressure-bonded with a press.

When using a vacuum press machine, the semiconductor device 40 is pressed onto the temporary fixing material precursor layer 30 at an air pressure of 1 hPa or less, a pressing pressure of 1 MPa, a pressing temperature of 120 to 200° C., and a holding time of 100 to 300 seconds, for example.

When using a vacuum laminator, for example, the pressure is 1 hPa or less, the compression temperature is 60 to 180°C or 80 to 150°C, the lamination pressure is 0.01 to 0.5 MPa or 0.1 to 0.5 MPa, and the holding time is 1 to 600 seconds or The semiconductor device 40 is pressure-bonded to the temporary fixing material precursor layer 30 for 30 to 300 seconds.

After the semiconductor device 40 is placed on the support member 10 via the temporary fixing material precursor layer 30, the curable resin component in the temporary fixing material precursor layer 30 is thermally or photocured under predetermined conditions. The heat curing conditions may be, for example, 300° C. or lower or 100 to 200° C. for 1 to 180 minutes or 1 to 60 minutes. In this way, a cured product of the curable resin component is formed, and the semiconductor device 40 is temporarily fixed to the support member 10 via the temporary fixing material layer 30c containing the cured product of the curable resin component, and the laminate 300 is can get. As shown in FIG. 3(a), the temporary fixing material layer 30c may be composed of a light absorption layer 32 and a cured resin layer 34c containing a cured product of a curable resin component.

The stacked body can also be produced, for example, by forming a temporary fixing material layer and then arranging the semiconductor device. FIG. 5 is a schematic cross-sectional view for explaining another embodiment of the method for manufacturing the laminate shown in FIG. FIG. Each step in FIG. 5 uses the temporary fixing material precursor layer shown in FIG. 2(a). The laminate is produced by forming a temporary fixing material precursor layer 30 containing a curable resin component on the support member 10 (FIG. 5(a)), and curing the curable resin component in the temporary fixing material precursor layer 30. The semiconductor device 40 can be manufactured by forming a temporary fixing material layer 30c containing a cured resin component (FIG. 5(b)), and placing the semiconductor device 40 on the formed temporary fixing material layer 30c (FIG. 5(b)). c)). In such a manufacturing method, a wiring layer 41 such as a rewiring layer or a pattern layer can be provided on the temporary fixing material layer 30c before placing the semiconductor device 40. Therefore, the semiconductor device 40 can be placed on the wiring layer 41. By arranging them, a semiconductor device 40 having a wiring layer 41 can be formed.

The semiconductor device 40 in the stacked body 100 (the semiconductor device 40 temporarily fixed to the support member 10) may be further processed. By processing the semiconductor device 40 in the stack 300 shown in FIG. 3(a), the stack 310 (FIG. 3(b)), 320 (FIG. 3(c)), 330 (FIG. 3(d)), etc. can get. Processing of semiconductor devices is not particularly limited, but examples include thinning of semiconductor devices, creation of through electrodes, formation of wiring layers such as rewiring layers and pattern layers, etching treatment, plating reflow treatment, sputtering treatment, etc. .

The semiconductor device can be thinned by grinding the surface of the semiconductor device 40 opposite to the surface in contact with the temporary fixing material layer 30c using a grinder or the like. The thickness of the thinned semiconductor device may be, for example, 100 μm or less.

The grinding conditions can be arbitrarily set depending on the desired thickness of the semiconductor device, the grinding state, etc.

The through electrode is manufactured by forming a through hole by performing dry ion etching, Bosch process, etc. on the surface of the thinned semiconductor device 40 opposite to the surface in contact with the temporary fixing material layer 30c. This can be done by processing such as copper plating.

In this way, the semiconductor device 40 is processed, and for example, the semiconductor device 40 is thinned and a stacked body 310 (FIG. 3(b)) in which the through electrode 44 is provided can be obtained.

The laminate 310 shown in FIG. 3(b) may be covered with a sealing layer 50, as shown in FIG. 3(c). The material of the sealing layer 50 is not particularly limited, but may be a thermosetting resin composition from the viewpoint of heat resistance and other reliability. Examples of the thermosetting resin used for the sealing layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The composition for forming the sealing layer 50 may contain additives such as fillers and/or flame retardant substances such as bromine compounds.

The supply form of the sealing layer 50 is not particularly limited, but may be a solid material, a liquid material, a fine particle material, a film material, or the like.

For sealing the processed semiconductor device 42 with the sealing layer 50 formed from a sealing film, a compression sealing machine, a vacuum laminating apparatus, or the like is used, for example. Using the above equipment, for example, the seal is heat-fused under the conditions of 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes. The sealing layer 50 can be formed by covering the processed semiconductor device 42 with a sealing film. The sealing film may be provided laminated onto a release liner such as a polyethylene terephthalate (PET) film. In this case, the sealing layer 50 can be formed by placing the sealing film on the processed semiconductor device 42, embedding the processed semiconductor device 42, and then peeling off the release liner. In this way, a laminate 320 shown in FIG. 3(c) can be obtained.

The thickness of the sealing film is adjusted so that the sealing layer 50 is greater than or equal to the thickness of the processed semiconductor device 42 . The thickness of the sealing film may be 50-2000 μm, 70-1500 μm, or 100-1000 μm.

The processed semiconductor device 42 having the sealing layer 50 may be diced into individual pieces as shown in FIG. 3(d). In this way, a laminate 330 shown in FIG. 3(d) can be obtained. Note that the singulation by dicing may be performed after the semiconductor device separation process described below.

<Separation process of semiconductor devices>
As shown in FIG. 1B, in the semiconductor device separation step, the temporary fixing material layer 30c in the stacked body 100 is irradiated with light to separate the semiconductor device 40 from the support member 10.

FIG. 4 is a schematic cross-sectional view for explaining one embodiment of the method for manufacturing a semiconductor device of the present invention using the laminate shown in FIG. 3(d), and FIGS. 4(a) and 4(b) are FIG. 3 is a schematic cross-sectional view showing each step.

When the temporary fixing material layer 30c is irradiated with light, the light absorption layer 32 included in the temporary fixing material layer 30c absorbs the light and instantaneously generates heat, and the cured resin layer 34c is formed at the interface or in the bulk. melting, stress between the support member 10 and the semiconductor device 40 (or the semiconductor device 42 after processing), scattering of the light absorption layer 32, etc. may occur. Due to the occurrence of such a phenomenon, the temporarily fixed semiconductor device 42 after processing can be easily separated (peeled off) from the support member 10. Note that in the separation step, in addition to the light irradiation, a slight stress may be applied to the processed semiconductor device 42 in a direction parallel to the main surface of the support member 10.

The light in the separation process may be incoherent light. Incoherent light is an electromagnetic wave that does not generate interference fringes, has low coherence, and has low directivity, and tends to be attenuated as the optical path length increases. Incoherent light is light that is not coherent light. Laser light is generally coherent light, whereas light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be said to be light other than laser light. Since the irradiation area of incoherent light is overwhelmingly wider than that of coherent light (that is, laser light), it is possible to reduce the number of times of irradiation (for example, once).

The light in the separation step may include at least infrared light. The light source in the separation process is not particularly limited, but may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by application and discharge in an arc tube filled with xenon gas. Since a xenon lamp discharges while repeating ionization and excitation, it stably has continuous wavelengths from the ultraviolet light region to the infrared light region. Since a xenon lamp requires less time to start than a lamp such as a metal halide lamp, the time required for the process can be significantly shortened. Furthermore, since it is necessary to apply a high voltage to emit light, high heat is generated instantaneously, but the cooling time is short and continuous work is possible. Furthermore, since the irradiation area of a xenon lamp is overwhelmingly wider than that of a laser beam, it is possible to reduce the number of times of irradiation (for example, once).

The irradiation conditions using the xenon lamp can be arbitrarily set such as applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), and irradiation energy. The irradiation conditions with the xenon lamp may be set to allow separation with one irradiation, or may be set to allow separation with two or more irradiations, but damage to the semiconductor device 42 after processing may be reduced. From this point of view, the irradiation conditions using the xenon lamp may be set such that separation can be achieved with one irradiation.

The separation step may be a step of irradiating light onto the temporary fixing material layer 30c via the support member 10 (direction A in FIG. 4(a)). That is, the temporary fixing material layer 30c may be irradiated with light from the support member 10 side. By irradiating the temporary fixing material layer 30c with light through the support member 10, it becomes possible to irradiate the entire temporary fixing material layer 30c.

When the semiconductor device 40 or the processed semiconductor device 42 is separated from the support member 10, the temporary fixing material layer remains 30c' on the semiconductor device 40 or the processed semiconductor device 42 (FIGS. 4(a) and 4(b)). If they are attached, they can be separated (peeled off) by washing with a solvent. Examples of the solvent include, but are not limited to, ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, and the like. These may be used alone or in combination of two or more. Further, it may be immersed in these solvents or may be subjected to ultrasonic cleaning. Furthermore, heating may be performed in a range of 100°C or less.

By separating the semiconductor device from the support member in this manner, a semiconductor element 60 including the semiconductor device 40 or the processed semiconductor device 42 is obtained (FIG. 4(b)). A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a semiconductor element mounting substrate.

[Resin film for temporary fixation]
As described above, the temporary fixing resin film of this embodiment has at least a resin layer containing a curable resin component, and optionally has a light absorption layer that absorbs light and generates heat. The curable resin component contains a hydrocarbon resin, and the cured product of the curable resin component has a storage modulus of 5 to 100 MPa at 25°C. A resin film for temporary fixing having such a configuration can be suitably used as a temporary fixing material for temporarily fixing a semiconductor device to a support member.

In order to facilitate separation of the semiconductor device 40 from the support member 10 or the processed semiconductor device 42, a release layer may be provided in place of the light absorption layer 32 on the temporary fixing resin film. Furthermore, in the case of a temporary fixing resin film having a light absorption layer 32, a release layer may be provided between the support member 10 and the light absorption layer 32 or between the light absorption layer 32 and the resin layer 34. Thereby, the semiconductor device 40 or the processed semiconductor device 42 can be easily separated.

Hereinafter, the present invention will be described in more detail with reference to Examples. However, the present invention is not limited to these examples.

[Examples 1-2 and Comparative Examples 1-3]
-Preparation of resin film for temporary fixation-
A varnish for forming a temporary fixing resin film was prepared with a composition in parts by mass shown in Table 1. The prepared varnish was applied onto the release-treated surface of a release-treated polyethylene terephthalate film (manufactured by Teijin Film Solutions Co., Ltd., A31, thickness 38 μm) used as a support film, and heated at 90°C for 5 minutes and at 100°C. It was dried by heating for 5 minutes. Thereafter, the above film was further laminated as a cover film on the resin layer to obtain a temporary fixing resin film with a cover film and a support film, respectively. The materials shown in Table 1 are as follows.
・Thermoplastic resin FG1924GT: Maleic anhydride modified styrene/ethylene/butylene/styrene block copolymer (manufactured by Clayton Polymer Japan Co., Ltd., styrene content 13% by mass)
FG1904GT: Maleic anhydride modified styrene/ethylene/butylene/styrene block copolymer (manufactured by Kraton Polymer Japan Co., Ltd., styrene content 30% by mass)
KK2: Acrylic rubber with a weight average molecular weight of 300,000 by GPC and a TG of -30°C (manufactured by Hitachi Chemical Co., Ltd.)
・Thermosetting resin HP7200H: dicyclopentadiene type epoxy resin (manufactured by DIC Corporation)
HP4710: Naphthalene skeleton epoxy resin (manufactured by DIC Corporation)
N-500P-10: Cresol novolak type polyfunctional epoxy resin (manufactured by DIC Corporation)
MEH7800M: Phenolic curing agent (manufactured by Meiwa Kasei Co., Ltd.)
・Antioxidant AO-60: Hindered phenol antioxidant (manufactured by ADEKA Co., Ltd.)
・Curing accelerator 2PZ-CN: Imidazole curing accelerator (manufactured by Shikoku Kasei Kogyo Co., Ltd.)

-Preparation of light absorption layer-
On a glass slide (size: 40 mm x 40 mm, thickness: 0.8 μm), which is a supporting member, a light absorption layer in which the first conductive layer is titanium and the second conductive layer is copper is prepared by sputtering, A support member provided with a light absorption layer was obtained. The light absorption layer was prepared as shown in Table 2 after pretreatment by reverse sputtering (Ar flow rate: 1.2×10 ⁻² Pa·m ³ /s (70 sccm), RF power: 300 W, time: 300 seconds). It was manufactured by performing RF sputtering under the processing conditions and setting the thickness of the titanium layer/copper layer to 50 nm/200 nm.

-Laminated body-
Examples 1 to 2 and Comparative Examples 1 to 3 were prepared on a support on which a light absorption layer was formed by sputtering the first conductor layer of titanium and the second conductor layer of copper on the slide glass. After peeling off the protective film of the resin film for temporary fixing produced using the resin composition for temporary fixing shown in FIG. The temporary fixing resin film was cured by heating at ℃ for 1 hour. Thereafter, pressure and heat of 80° C./25 N/0 seconds, 195° C./25 N/2.5 seconds, and 270° C./25 N/3.5 seconds were continuously applied onto the semiconductor chip. After that, sealing molding was performed using the following sealing material under the conditions of 150°C/5 MPa and 0.7 Torr on the support scale, and by heating at 150°C/6 hours to harden the sealing material, light absorption was achieved. A laminate of layered support/temporary fixing resin film/semiconductor chip/sealing material was produced.
・Encapsulant: CEL-400ZHF40-W5G (manufactured by Hitachi Chemical Co., Ltd.)

The properties and characteristics of the temporary fixing resin films produced using the temporary fixing resin compositions shown in Examples 1 to 2 and Comparative Examples 1 to 3 were evaluated by the following method.
-Lamination property-
The coated base material on the second layer side of the two-layered film temporary fixing material was peeled off, and a silicon mirror wafer with a thickness of 775 μm was formed at 100°C using a small laminator (FIRST LAMINATOR, manufactured by Taisei Laminator Co., Ltd.). (12 inches). Thereafter, the surface was visually checked, the presence or absence of voids was observed, and the lamination properties were evaluated. The evaluation criteria are as follows. The results are shown in Table 3.
×: When voids occur ○: When voids do not occur

-100℃ shear viscosity before curing-
The shear viscosity of the temporary fixing resin film before curing was evaluated by the following method. A single-layer film for measurement with either the first layer or the second layer adjusted to a thickness of 80 μm was laminated at 100°C, and the thickness was adjusted to 160 μm. - Shear viscosity was measured using Instrument Co., Ltd., ARES). The measurement method was "parallel plate", the measurement jig was a circular jig with a diameter of 8 mm, the measurement mode was "dynamic temperature ramp", the frequency was 1 Hz, and the single layer film for measurement was subjected to 5% strain at 35 ° C. The temperature was raised to 120°C at a heating rate of 20°C/min, and the viscosity of the measurement film was measured when the temperature reached 100°C.
The results are shown in Table 3.

-Modulus at 270℃ after curing-
The storage modulus of the temporary fixing resin film after curing was evaluated by the following method. A resin film for temporary fixation for measurement adjusted to a thickness of 80 μm was laminated at 100°C. This was heated in an oven at 130°C for 30 minutes, then at 170°C for 2 hours to cure the film, and then heated at 200°C for 1 hour. Thereafter, it was cut into a piece having a width of 4 mm and a length of 33 mm in the width direction. The cut single-layer film for measurement was set in a dynamic viscoelasticity device (product name: Rheogel-E4000, manufactured by UBM Co., Ltd.), a tensile load was applied, and the measurement was performed at a frequency of 10 Hz and a heating rate of 3°C/min. , the storage modulus at 270°C was measured. The results are shown in Table 3.

- Embeddability -
Peel off the protective film side of the resin film for temporary fixation (thickness excluding support film and protective film: 80 μm) on the support (slide glass), laminate at 100°C, and laminate on top of it at 130°C/50N/10 seconds. A semiconductor chip measuring 7.3 mm x 7.3 mm, 150 μm thick, and having a semicircular step of 40 μm on the surface was mounted under the following conditions. Here, the difference between the thickness of the temporary fixing resin layer and the semicircular step (corresponding to the height between the unevenness) on the surface of the semiconductor chip is 40 μm. Thereafter, the resin film for temporary fixing was cured by heating at 130°C for 30 minutes and then at 200°C for 1 hour. The sample thus obtained was observed from the slide glass surface, the image was analyzed using software such as Photoshop (registered trademark), and it was observed whether voids were generated between the semiconductor chip and the temporary fixing resin film. . The results are shown in Table 3.
×: When voids occur ○: When voids do not occur

-Resin creeps up-
Prepare two samples for each of the samples obtained in the above embedding evaluation, and cast one in epoxy resin as it is to observe the cross section of the slide glass/temporary fixing resin film/semiconductor chip. The edge of the semiconductor chip was checked, and the amount of resin creeping up of the temporary fixing resin film when the semiconductor chip was mounted was checked. The other sample was subjected to continuous pressure and heat of 80℃/25N/0 seconds, 195℃/25N/2.5 seconds, and 270℃/25N/3.5 seconds on the semiconductor chip, and then applied to the epoxy resin. Cast the slide glass/temporary fixing resin film/semiconductor chip so that the cross section of the semiconductor chip can be observed, check the edge of the semiconductor chip, and check the amount of resin creeping up of the temporary fixing resin film when stacking semiconductor chips. It was confirmed. The results are shown in Table 3.
×: When the amount of resin creeping up to the side of the chip is 31 μm or more 〇: When the amount of resin creeping up to the side of the chip is 30 μm or less

-270℃ heat resistance-
The heat resistance of the temporary fixing resin film at 270°C was evaluated by the following method. A silicon mirror wafer (6 inches) with a thickness of 625 μm was cut into pieces of 25 mm×25 mm by blade dicing. A temporary fixing resin film was roll laminated at 100° C. on the surface of the silicon mirror wafer that had been cut into small pieces. Next, a slide glass with a thickness of 0.1 to 0.2 mm and a size of approximately 18 mm x 18 mm is roll laminated on a temporary fixing resin film at 100°C, and the temporary fixing resin film is attached to the silicon wafer and the slide glass. A laminate sample sandwiched between the two was prepared. The obtained sample was heated at 130°C for 30 minutes, then heated at 200°C for 1 hour to harden the temporary fixing resin film, and then heated at 270°C for 60 minutes. The sample obtained in this way was observed from the slide glass surface, the image was analyzed using software such as Photoshop (registered trademark), and the heat resistance at 200°C was determined from the ratio of voids to the entire area of the temporary fixing resin film. The gender was evaluated. The evaluation criteria are as follows. The results are shown in Table 3.
○: When the percentage of voids is less than 5% ×: When the percentage of voids is 5% or more

-Releasability-
The above laminate was irradiated with a xenon lamp under the following irradiation conditions: applied voltage 4000 V, pulse width 200 μs, irradiation distance 50 mm, number of irradiations once, and irradiation time 200 μs, and peelability from the support member was evaluated. The xenon lamp was S2300 manufactured by Xenon (wavelength range: 270 nm to near-infrared region, irradiation energy per unit area: 7 J/cm ² (predicted value, irradiation condition A), 13 J/cm ² (predicted value, irradiation condition Using B)), xenon lamp irradiation was performed from the support member (slide glass) side of the laminate. The irradiation distance is the distance between the light source and the stage on which the slide glass is installed. Regarding the evaluation of the peelability test, a semiconductor chip that spontaneously peeled off from the slide glass after irradiation with a xenon lamp was evaluated as "○", and a semiconductor chip that did not separate under these irradiation conditions was evaluated as "x". The results are shown in Table 3.

As shown in Table 3, the shear viscosity at 100°C in the uncured state before curing of the curable resin component contained in the temporary fixing resin composition is 9000 to 30000 MPa, and the shear viscosity at 270°C as a cured product obtained after curing is The laminates of Examples 1 and 2 whose storage modulus satisfies 1.5 to 20 MPa are the laminates of Comparative Examples 1 to 3 which do not satisfy at least one of the requirements of the shear viscosity at 100°C and the storage modulus at 270°C. Compared to the laminate of 2009, it was possible to significantly suppress resin creep-up while having excellent embedding properties. Thus, it can be seen that the laminates of Examples 1 and 2 can satisfy both requirements. Furthermore, it had excellent properties in terms of heat resistance at 270° C. and peelability from the support member. From the above results, it was confirmed that the temporary fixing material resin composition of the present invention shows good results in manufacturing semiconductor devices. Thereby, an adverse effect on the reliability of the semiconductor device can be eliminated.

As described above, according to the present invention, creeping up to the side surface of the chip can be suppressed, and electronic elements (external connection members and wiring layers) on the chip surface can be reliably protected, so that the present invention is useful as a temporary fixing material. A temporary fixing resin composition and a temporary fixing resin film containing the temporary fixing resin composition can be provided. Thereby, it is possible to provide a method for manufacturing a semiconductor device in which a temporarily fixed semiconductor device can be easily separated from a support member.

DESCRIPTION OF SYMBOLS 10... Supporting member, 30... Temporary fixing material precursor layer, 30c... Temporary fixing material layer, 32... Light absorption layer, 34... Resin layer, 34c... Resin cured material layer , 40... Semiconductor device, 41... Wiring layer, 42... Semiconductor device after processing, 44... Through electrode, 50... Sealing layer, 60... Semiconductor element, 100,300 , 310, 320, 330... laminate.

Claims (12)

A temporary fixing resin composition contained in a resin layer constituting a temporary fixing material layer formed on a support member for temporarily fixing a semiconductor chip,
The temporary fixing resin composition has a shear viscosity of 9,000 to 30,000 Pa·s at 100°C in an uncured state before curing, and a storage modulus of 1.5 to 270°C as a cured product obtained after curing. A temporary fixing resin composition having a pressure of 20 MPa. The temporary fixing resin composition according to claim 1 , wherein the temporary fixing resin composition contains a thermoplastic resin and a curable resin. The temporary fixing resin composition according to claim 1 or 2 , wherein the temporary fixing resin composition further contains an antioxidant. The temporary fixing resin composition according to any one of claims 1 to 3 , wherein the temporary fixing resin composition further contains a curing accelerator. A resin film for temporary fixing, comprising a support film and a resin layer formed on the support film and containing the resin composition for temporary fixation according to any one of claims 1 to 4. The resin film for temporary fixation according to claim 5 , comprising a light absorption layer and a resin layer containing the resin composition for temporary fixation, which is formed by laminating on the support film. The temporary fixing resin film according to claim 5 or 6 , wherein the temporary fixing material layer is 20 to 50 μm thicker than the height of the convex portions of the external connection member and the wiring layer on the surface of the semiconductor chip. The resin composition for temporary fixing according to any one of claims 1 to 4 or the resin film for temporary fixing according to any one of claims 5 to 7 is used on the support member, and the resin forming a temporary fixing material layer having a layer;
a step of mounting a semiconductor chip having an external connection member and a wiring layer on the surface of the temporary fixing material layer;
curing the temporary fixing material layer with heat or light;
processing the semiconductor chip;
manufacturing a semiconductor device by collectively sealing the semiconductor chip mounted on the support member or the processed semiconductor chip;
separating the semiconductor device from the support member;
separating the temporary fixing material layer from the semiconductor device ;
A method for manufacturing a semiconductor device , comprising: 9. The method for manufacturing a semiconductor device according to claim 8 , wherein at least one of a release layer and a light absorption layer is formed on the support member. Separation of the semiconductor device and the support member is performed by irradiating light to the temporary fixing material layer having at least a light absorption layer so that the light absorption layer absorbs light and generates heat. The method for manufacturing a semiconductor device according to claim 9. 11. The method for manufacturing a semiconductor device according to claim 10, wherein the light includes at least infrared light. 12. The method for manufacturing a semiconductor device according to claim 10, wherein the step of separating the semiconductor device from the support member is performed by irradiating the temporary fixing material layer with the light through the support member.