JP2021111645A - Resin composition for temporary fixing, resin film, and manufacturing method of semiconductor device - Google Patents

Abstract

To provide a resin composition for temporary fixing, a resin film, and a method for manufacturing of a semiconductor device using the resin composition or the resin film which can embed a semiconductor chip with an electronic element on the surface without voids and do not crawl up to the side surface of the semiconductor chip in the subsequent pressure or heating process when the semiconductor chip is processed.SOLUTION: A resin composition for temporary fixing according to the present invention includes a resin layer constituting a temporary fixing material layer formed on a support member for temporary fixing of a semiconductor chip, and the shear viscosity at 100°C in the uncured state before curing is 9000 to 30,000 Pa s, and the storage elastic modulus of a cured product obtained after curing at 270°C is 1.5 to 20 MPa, and the resin composition is used as a thermosetting resin component included in a temporary fixing resin film applied at the time of manufacturing of the semiconductor device.SELECTED DRAWING: Figure 1

Description

The present invention relates to a resin composition for temporary fixing, a resin film, and a method for manufacturing a semiconductor device.

For the purpose of increasing the density and performance of semiconductor devices, mounting forms in which semiconductor chips with different performances are mixedly mounted on one semiconductor device have been proposed, and high-density interconnect technology between chips with excellent cost is important. (See, for example, Patent Document 1).

A package-on-package that connects different semiconductor chips by stacking them on a semiconductor chip by flip-chip mounting is widely adopted in smartphones and tablet terminals (see, for example, Non-Patent Document 1 and Non-Patent Document 2).
Furthermore, as a form for mounting at high density, a packaging technology (organic interposer) using an organic substrate having high-density wiring, a fan-out type packaging technology (FO-WLP) having a through mold via (TMV), and silicon. Alternatively, a packaging technology using a glass interposer, a packaging technology using a through silicon via (TSV), a packaging technology using a semiconductor chip embedded in a substrate for transmission between chips, and the like have been proposed.

When flip-chip mounting different semiconductor chips on a semiconductor chip, a method of temporarily fixing the lowermost semiconductor chip to a support formed of a resin composition to manufacture a semiconductor device is currently used. (See, for example, Patent Document 2)

Special Table 2012-528770 JP-A-2018-93162

However, when fixing the semiconductor chip on the resin composition, if the resin composition has low viscosity and low elasticity, the resin composition crawls up to the side surface of the chip, and conversely, if the resin composition has too high viscosity and high elasticity, the chip surface It is feared that the electronic elements of the semiconductor device cannot be protected and the reliability of the semiconductor device is adversely affected.

The present invention has been made in view of such circumstances, and it is possible to embed a semiconductor chip with an electronic element without voids, and the subsequent semiconductor chip temporary fixing material crawls up to the side surface of the semiconductor chip. It is an object of the present invention to provide a resin composition and a resin film for temporary fixing used in the manufacture of a semiconductor device.

A resin composition for temporary fixing, which has a shear viscosity at 100 ° C. of 9000 to 30000 Pa · s in an uncured state before curing and a storage elasticity at 270 ° C. of the cured product obtained after curing at 1.5 to 20 MPa, is used as a semiconductor. By applying it to the resin layer contained in the temporary fixing material layer formed as a layer constituting the temporary fixing member of the chip, when embedding a semiconductor chip, it can be embedded without voids between the electronic element and the temporary fixing material. When the fixing resin composition is cured and the flip chip is mounted on the semiconductor chip, a temporary fixing resin composition used for manufacturing a semiconductor device that can be mounted without the resin creeping up on the side surface of the chip is provided.

The present invention is a temporary fixing resin composition contained in a resin layer constituting a temporary fixing material layer for temporarily fixing a semiconductor device to a support, and is a resin composition containing a thermoplastic resin and a curable resin component. The resin composition for temporary fixing is that the shear viscosity at 100 ° C. in the uncured state before curing is 9000 to 30000 MPa, and the storage elastic coefficient at 270 ° C. as a cured product obtained after curing is 1.5 to 20 MPa. Provide things.

The temporary fixing resin composition is a resin composition containing a thermoplastic resin and a thermosetting resin component, but may further contain an antioxidant and a curing accelerator.

The present invention also provides a temporary fixing resin film having a support film and a resin layer formed on the support film and containing the temporary fixing resin composition. The temporary fixing resin film may have a light absorption layer formed by laminating on the support film and a resin layer containing the temporary fixing resin composition.

The temporary fixing resin layer may be formed 20 to 50 μm thicker than the height of the convex portion of the electronic element (external connecting member and wiring layer) on the surface of the semiconductor chip.

As a semiconductor device manufacturing method to which the temporary fixing resin film is applied,
A step of forming a temporary fixing material layer having the resin layer on the support by using the temporary fixing resin composition or the temporary fixing resin film.
A process of mounting a semiconductor chip having an external connecting member and a wiring layer on the surface of the temporary fixing material layer, and
The step of curing the temporary fixing material layer with heat or light, and
The process of processing the semiconductor chip and
A process of manufacturing a semiconductor device by collectively sealing the semiconductor chip mounted on the support member or the processed semiconductor chip.
The step of separating the semiconductor device from the support and
Provided is a method for manufacturing a semiconductor device including a step of separating the temporary fixing material layer from the semiconductor device.

In the method for manufacturing a semiconductor device, at least one of a release layer and a light absorption layer may be formed on the support member.

The semiconductor device and the support member are separated by irradiating the temporary fixing material layer having at least the light absorption layer with light so that the light absorption layer absorbs light to generate heat and separates the semiconductor device. preferable.

The light in the separation step may be light including at least infrared light. The light source of the light may be a xenon lamp.

The step of separating the semiconductor device from the support member may be a step of irradiating the temporary fixing material layer with light via the support member.

According to the present invention, a resin composition for temporary fixing, which is useful as a temporary fixing material, can suppress creeping up to the side surface of the chip and can reliably protect electronic elements (external connection terminals and wiring layers) on the surface of the chip. A temporary fixing resin film having a product and the temporary fixing resin composition can be provided.
Further, according to the present invention, it is possible to provide a method for manufacturing a semiconductor device capable of easily separating the temporarily fixed semiconductor device from the support member.

FIG. 1 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device of the present invention, and FIGS. 1A and 1B are schematic cross-sectional views showing each step. 2A, 2B, and 2C are schematic cross-sectional views showing an example of an embodiment of a temporary fixing material precursor layer having a light absorption layer. 3 (a), (b), (c), and (d) are schematic cross-sectional views showing an embodiment of a laminated body formed by using the temporary fixing material precursor layer shown in FIG. 2 (a). Is. FIG. 4 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device of the present invention using the laminate shown in FIG. 3 (d), and FIGS. 4 (a) and 4 (b) are shown. It is a schematic cross-sectional view which shows each process. 5A and 5B are schematic cross-sectional views for explaining another embodiment of the method for manufacturing the laminate shown in FIG. 1A, and FIGS. 5A, 5B, and 5C are steps. It is a schematic cross-sectional view which shows.

Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments. In the following embodiments, the components (including steps and the like) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

The same applies to the numerical values and the range thereof in the present specification, and does not limit the present invention. The numerical range indicated by using "~" in the present specification indicates a range including the numerical values before and after "~" as the minimum value and the maximum value, respectively. In the numerical range described stepwise in the present specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. good. Further, in the numerical range described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

As used herein, (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto. The same applies to other similar expressions such as (meth) acrylate and (meth) acryloyl group.

[Manufacturing method of semiconductor devices]
The method for manufacturing a semiconductor device according to the present embodiment includes a support member, a temporary fixing material layer that absorbs light to generate heat (hereinafter, may be simply referred to as a "temporary fixing material layer"), and a semiconductor device. Includes a preparatory step of preparing the laminated body laminated in this order, and a separation step of irradiating the temporary fixing material layer in the laminated body with light to separate the semiconductor device from the support member.

<Preparation process of laminated body>
FIG. 1 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device of the present invention, and FIGS. 1A and 1B are schematic cross-sectional views showing each step. As shown in FIG. 1A, in the step of preparing the laminate, the laminate 100 in which the support member 10, the temporary fixing material layer 30c, and the semiconductor device (including the semiconductor chip) 40 are laminated in this order is provided. to prepare.

The support member 10 is not particularly limited, but may be, for example, a glass substrate, a resin substrate, a silicon wafer, a metal thin film, or the like. The support member 10 may be a substrate that does not interfere with the transmission of light, or may be a glass substrate.

The thickness of the support member 10 may be, for example, 0.1 to 2.0 mm. When the thickness is 0.1 mm or more, handling tends to be easy, and when the thickness is 2.0 mm or less, the material cost tends to be suppressed.

The temporary fixing material layer 30c is a layer for temporarily fixing the support member 10 and the semiconductor device 40, and is a layer that absorbs light and generates heat when irradiated with light. The light to be absorbed in the temporary fixing material layer 30c may be light including any of infrared light, visible light, and ultraviolet light.
Since the light absorption layer described later can efficiently generate heat, the light to be absorbed in the temporary fixing material layer 30c may be light containing at least infrared light. Further, the temporary fixing material layer 30c may be a layer that absorbs infrared light and generates heat when irradiated with light including infrared light.

In the laminate 100 shown in FIG. 1A, for example, a temporary fixing material precursor layer is formed on a support member, a semiconductor device is arranged on the temporary fixing material precursor layer, and the temporary fixing material precursor layer is included in the temporary fixing material precursor layer. It can be produced by curing the curable resin component to form a temporary fixing material layer. As described above, the temporary fixing material precursor layer has a resin layer containing at least a curable resin component, and the cured resin component is formed as a layer in an uncured state before curing.

The temporary fixing material precursor layer may have a resin layer containing the curable resin component and a light absorbing layer that absorbs light to generate heat. 2A, 2B, and 2C are schematic cross-sectional views showing an example of an embodiment of a temporary fixing material precursor layer having a light absorption layer. The temporary fixing material precursor layer 30 is not particularly limited in its configuration as long as it has the light absorption layer 32 and the resin layer 34, but for example, the light absorption layer 32 and the resin layer 34 are supported members. A configuration having the resin layer 34 and the light absorption layer 32 in this order from the 10 side (FIG. 2A), a configuration having the resin layer 34 and the light absorption layer 32 in this order from the support member 10 side (FIG. 2B), the light absorption layer 32 and the resin layer 34. A configuration having the light absorbing layer 32 and the light absorbing layer 32 in this order (FIG. 2 (c)) and the like can be mentioned. Of these, the temporary fixing material precursor layer 30 may have a structure in which the light absorbing layer 32 and the resin layer 34 are provided in this order from the support member 10 side (FIG. 2A). Hereinafter, an embodiment using the temporary fixing material precursor layer 30 having the configuration mainly shown in FIG. 2A will be described in detail.

One aspect of the light absorption layer 32 may be a layer composed of a conductor (hereinafter, may be simply referred to as a “conductor”) that absorbs light and generates heat (hereinafter, may be referred to as a “conductor layer”. ). The conductor constituting such a conductor layer is not particularly limited as long as it is a conductor that absorbs light and generates heat, but may be a conductor that absorbs infrared light and generates heat. Examples of the conductor include metals such as chromium, copper, titanium, silver, platinum and gold, alloys such as nickel-chromium, stainless steel and copper-zinc, indium tin oxide (ITO), zinc oxide and niobium oxide. Examples thereof include carbon materials such as metal oxides and conductive carbon. These may be used individually by 1 type or in combination of 2 or more type. Of these, the conductor may be chromium, titanium, copper, aluminum, silver, gold, platinum, or carbon.

The light absorption layer 32 may be composed of a plurality of conductor layers. As such a light absorption layer, for example, a first conductor layer provided on the support member 10 and a second conductor provided on the opposite surface of the support member 10 of the first conductor layer. Examples thereof include a light absorption layer composed of a layer. The conductor in the first conductor layer may be titanium from the viewpoints of adhesion to a support member (for example, glass), film forming property, thermal conductivity, low heat capacity, and the like. The conductor in the second conductor layer may be copper, aluminum, silver, gold, or platinum from the viewpoint of high expansion coefficient, high thermal conductivity, and the like, and among these, copper or aluminum is preferable.

The light absorption layer 32 supports these conductors by physical vapor deposition (PVD) such as vacuum deposition and sputtering, and chemical vapor deposition (CVD) such as electrolytic plating, electroless plating, and plasma chemical vapor deposition. Can be formed directly on. Of these, since the conductor layer can be formed over a large area, it may be formed by using physical vapor deposition, or may be formed by sputtering or vacuum deposition.

The thickness of one aspect of the light absorption layer 32 may be 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm (0.05 to 3 μm) from the viewpoint of light peelability. When the light absorption layer 32 is composed of the first conductor layer and the second conductor layer, the thickness of the first conductor layer is 1 to 1000 nm, 5 to 500 nm, or 10 to 100 nm. The thickness of the second conductor layer may be 1 to 5000 nm, 10 to 500 nm, or 50 to 200 nm.

Another aspect of the light absorption layer 32 is a layer containing a cured product of a curable resin composition containing conductive particles that absorb light to generate heat. The curable resin composition may contain conductive particles and a curable resin component. The curable resin component can be a curable resin component that is cured by heat or light. The curable resin component is not particularly limited, and examples thereof include those exemplified by the curable resin component in the resin layer described later.

The conductive particles are not particularly limited as long as they absorb light and generate heat, but may be those that absorb infrared light and generate heat. Conductive particles include, for example, silver powder, copper powder, nickel powder, aluminum powder, chromium powder, iron powder, true casting powder, tin powder, titanium alloy, gold powder, alloy copper powder, copper oxide powder, silver oxide powder, tin oxide powder. , And at least one selected from the group consisting of conductive carbon (carbon) powder. The conductive particles may be at least one selected from the group consisting of silver powder, copper powder, silver oxide powder, copper oxide powder, and carbon (carbon) powder from the viewpoint of handleability and safety. Further, the conductive particles may be particles in which a resin or metal is used as a core and the core is plated with a metal such as nickel, gold, or silver. Further, the conductive particles may be particles whose surface is treated with a surface treatment agent from the viewpoint of dispersibility with a solvent.

The content of the conductive particles may be 10 to 90 parts by mass with respect to 100 parts by mass of the total amount of the components other than the conductive particles in the curable resin composition. The components other than the conductive particles of the curable resin composition do not include the organic solvent described later. The content of the conductive particles may be 15 parts by mass or more, 20 parts by mass or more, or 25 parts by mass or more. The content of the conductive particles may be 80 parts by mass or less or 50 parts by mass or less.

The curable resin composition may contain a thermosetting resin, a curing agent, and a curing accelerator.
The content of the thermosetting resin may be 10 to 90 parts by mass with respect to 100 parts by mass of the total amount of the components other than the conductive particles of the curable resin composition. The content of the curing agent and the curing accelerator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin.

The light absorption layer 32 can be formed from a curable resin composition containing conductive particles that absorb light and generate heat. The curable resin composition may be used as a varnish of the curable resin composition diluted with an organic solvent. Examples of the organic solvent include acetone, ethyl acetate, butyl acetate, methyl ethyl ketone (MEK) and the like. These organic solvents may be used alone or in combination of two or more. The concentration of solid components in the varnish may be 10 to 80% by mass based on the total mass of the varnish.

The light absorption layer 32 can be formed by directly applying the curable resin composition to the support member 10. When a varnish of a curable resin composition diluted with an organic solvent is used, it can be formed by applying the curable resin composition to the support member 10 and removing the solvent by heating and drying.

The thickness of the other embodiment of the light absorption layer 32 may be 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm (0.05 to 3 μm) from the viewpoint of light peelability.

Subsequently, the resin layer 34 is formed on the light absorption layer 32.

The resin layer 34 is a layer that does not contain conductive particles and contains a curable resin component that is cured by heat or light. The resin layer 34 is a layer containing a curable resin component, and has a storage elastic modulus of 1.5 to 20 MPa at 270 ° C. as a cured product obtained after the curable resin component is cured. The curable resin component may include a hydrocarbon resin.

The hydrocarbon resin used in the present embodiment is a resin whose main skeleton is composed of hydrocarbons, and falls into the category of thermoplastic resins. Examples of such hydrocarbon resins include ethylene / propylene copolymers, ethylene / 1-butene copolymers, ethylene / propylene / 1-butene copolymer elastomers, ethylene / 1-hexene copolymers, and ethylene / propylene copolymers. 1-octene copolymer, ethylene / styrene copolymer, ethylene / norbornene copolymer, propylene / 1-butene copolymer, ethylene / propylene / unconjugated diene copolymer, ethylene / 1-butene / unconjugated diene Copolymer, ethylene / propylene / 1-butene / non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene / butadiene / styrene block copolymer (SBS), styrene / isoprene / styrene block copolymer (SIS), Examples thereof include a styrene / ethylene / butylene / styrene block copolymer (SEBS) and a styrene / ethylene / propylene / styrene block copolymer (SEPS). These hydrocarbon resins may be hydrogenated. Further, these hydrocarbon resins may be carboxy-modified with maleic anhydride or the like. Among these, the hydrocarbon resin may contain a hydrocarbon resin (styrene resin) containing a monomer unit derived from styrene, and may contain a styrene / ethylene / butylene / styrene block copolymer (SEBS). May be good.

The Tg of the hydrocarbon resin may be -100 to 500 ° C, -50 to 300 ° C, or -50 to 50 ° C. When the Tg of the hydrocarbon resin is 500 ° C. or lower, it tends to be easy to secure flexibility and improve low-temperature stickability when a film-shaped temporary fixing material is formed.
When the Tg of the hydrocarbon resin is -100 ° C. or higher, when a film-shaped temporary fixing material is formed, the flexibility becomes too high, which suppresses the resin from creeping up when the semiconductor chip is mounted and reduces the peelability. It tends to be suppressed.

The Tg of the hydrocarbon resin is the midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the hydrocarbon resin is an intermediate point glass calculated by a method based on JIS K 7121 by measuring the change in calorific value under the conditions of a temperature rising rate of 10 ° C./min and a measurement temperature of -80 to 80 ° C. The transition temperature.

The weight average molecular weight (Mw) of the hydrocarbon resin may be 10,000 to 5 million or 100,000 to 2 million. When the weight average molecular weight is 10,000 or more, it tends to be easy to secure the heat resistance of the formed temporary fixing material layer. When the weight average molecular weight is 5 million or less, when a film-shaped temporary fixing material layer is formed, it tends to be easy to suppress a decrease in flow and a decrease in stickability. The weight average molecular weight is a polystyrene-equivalent value using a calibration curve made of standard polystyrene by gel permeation chromatography (GPC).

The content of the hydrocarbon resin can be appropriately set so that the storage elastic modulus at 25 ° C. in the cured product of the curable resin component is in the range of 5 to 100 MPa. The content of the hydrocarbon resin may be, for example, 40 to 90 parts by mass with respect to 100 parts by mass of the total mass of the curable resin component. The content of the hydrocarbon resin may be 50 parts by mass or more or 60 parts by mass or more. The content of the hydrocarbon resin may be 85 parts by mass or less or 80 parts by mass or less. When the content of the hydrocarbon resin is in the above range, the temporary fixing material layer tends to be more excellent in thin film formability and flatness.

The curable resin component contained in the resin layer may contain a thermosetting resin. The thermosetting resin is not particularly limited as long as it is a resin that is cured by heat. Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin. These may be used individually by 1 type or in combination of 2 or more type. Of these, the thermosetting resin may be an epoxy resin because it is excellent in heat resistance, workability, and reliability. When an epoxy resin is used as the thermosetting resin, it may be used in combination with an epoxy resin curing agent.

The epoxy resin is not particularly limited as long as it is cured and has a heat resistant effect. Examples of the epoxy resin include bifunctional epoxy resins such as bisphenol A type epoxy, novolak type epoxy resins such as phenol novolac type epoxy resin, and cresol novolac type epoxy resin. Further, the epoxy resin may be a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic epoxy resin, or an alicyclic epoxy resin. Further, by selecting an epoxy group having a low functional group equivalent, the storage elastic modulus at a high temperature after curing becomes high, and the resin does not become low in viscosity even when a high temperature and a high pressure are applied during processing of a semiconductor chip. This leads to suppression of resin creeping up.

When an epoxy resin is used as the thermosetting resin, the curable resin component may contain an epoxy resin curing agent. As the epoxy resin curing agent, a commonly used known curing agent can be used. Examples of the epoxy resin curing agent include bisphenol and phenol novolac having two or more phenolic hydroxyl groups such as amine, polyamide, acid anhydride, polysulfide, boron trifluoride, bisphenol A, bisphenol F, and bisphenol S in one molecule. Examples thereof include resins, bisphenol A novolak resins, cresol novolak resins, phenol resins such as phenol aralkyl resins, and the like.

The total content of the thermosetting resin and the curing agent may be 10 to 60 parts by mass with respect to 100 parts by mass of the total mass of the curable resin component. The total content of the thermosetting resin and the curing agent may be 15 parts by mass or more or 20 parts by mass or more. The total content of the thermosetting resin and the curing agent may be 50 parts by mass or less or 40 parts by mass or less. When the total content of the thermosetting resin and the curing agent is within the above range, the temporary fixing material layer tends to be more excellent in thin film formability and flatness. When the total content of the thermosetting resin and the curing agent is within the above range, the heat resistance tends to be more excellent.

The curable resin component may further contain a curing accelerator. Examples of the curing accelerator include imidazole derivative, dicyandiamide derivative, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5, 4,0] Undecene-7-tetraphenylborate and the like can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.

The content of the curing accelerator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin and the curing agent. When the content of the curing accelerator is within the above range, the curing property tends to be improved and the heat resistance tends to be more excellent.

The curable resin component may further contain a polymerizable monomer and a polymerization initiator. The polymerizable monomer is not particularly limited as long as it is polymerized by heating or irradiation with ultraviolet light or the like. The polymerizable monomer may be a compound having a polymerizable functional group such as an ethylenically unsaturated group from the viewpoint of material selectivity and availability. Examples of the polymerizable monomer include (meth) acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinylamide, vinyl arylated and the like. Of these, the polymerizable monomer may be (meth) acrylate. The (meth) acrylate may be monofunctional (monofunctional), bifunctional, or trifunctional or higher, but may be bifunctional or higher (meth) acrylate from the viewpoint of obtaining sufficient curability. good.

Examples of the monofunctional (meth) acrylate include (meth) acrylic acid; methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, and butoxy. Ethyl (meth) acrylate, isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octylheptyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate 2-Hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, ethoxypolyethylene Acrylate (meth) acrylates such as glycol (meth) acrylate, methoxypolypropylene glycol (meth) acrylate, ethoxypolypropylene glycol (meth) acrylate, mono (2- (meth) acryloyloxyethyl) succinate; benzyl (meth) acrylate, Phenyl (meth) acrylate, o-biphenyl (meth) acrylate, 1-naphthyl (meth) acrylate, 2-naphthyl (meth) acrylate, phenoxyethyl (meth) acrylate, p-cumylphenoxyethyl (meth) acrylate, o- Phenylphenoxyethyl (meth) acrylate, 1-naphthoxyethyl (meth) acrylate, 2-naphthoxyethyl (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, nonylphenoxypolyethylene glycol (meth) acrylate, phenoxypolypropylene glycol (meth) acrylate, 2 -Hydroxy-3-phenoxypropyl (meth) acrylate, 2-hydroxy-3- (o-phenylphenoxy) propyl (meth) acrylate, 2-hydroxy-3- (1-naphthoxy) propyl (meth) acrylate, 2-hydroxy Examples thereof include aromatic (meth) acrylates such as -3- (2-naphthoxy) propyl (meth) acrylate.

Examples of the bifunctional (meth) acrylate include ethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, and polyethylene glycol di (meth). Acrylate, propylene glycol di (meth) acrylate, dipropylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, tetrapropylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, ethoxylated polypropylene glycol di (Meta) acrylate, 1,3-butanediol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, 3-methyl-1,5-pentanediol di ( Meta) acrylate, 1,6-hexanediol di (meth) acrylate, 2-butyl-2-ethyl-1,3-propanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, 1, An aliphatic (meth) acrylate such as 10-decanediol di (meth) acrylate, glycerindi (meth) acrylate, tricyclodecanedimethanol (meth) acrylate, and ethoxylated 2-methyl-1,3-propanediol di (meth) acrylate. ) Acrylate; ethoxylated bisphenol A di (meth) acrylate, propoxylated bisphenol A di (meth) acrylate, ethoxylated propoxylated bisphenol A di (meth) acrylate, ethoxylated bisphenol F di (meth) acrylate, propoxylated bisphenol F di (Meta) acrylate, ethoxylated propoxylated bisphenol F di (meth) acrylate, ethoxylated fluorene type di (meth) acrylate, propoxylated fluorene type di (meth) acrylate, ethoxylated propoxylated fluorene type di (meth) acrylate, etc. Aromatic (meth) acrylate and the like can be mentioned.

Examples of the trifunctional or higher functional polyfunctional (meth) acrylate include trimethyl propantri (meth) acrylate, ethoxylated trimethylol propanthry (meth) acrylate, propoxylated trimethylol propanthry (meth) acrylate, and ethoxylated propoxylation. Trimethylol propantholtri (meth) acrylate, pentaerythritol tri (meth) acrylate, ethoxylated pentaerythritol tri (meth) acrylate, propoxylated pentaerythritol tri (meth) acrylate, ethoxylated propoxylated pentaerythritol tri (meth) acrylate, penta Erislitol tetra (meth) acrylate, ethoxylated pentaerythritol tetra (meth) acrylate, propoxylated pentaerythritol tetra (meth) acrylate, ethoxylated propoxylated pentaerythritol tetra (meth) acrylate, ditrimethylolpropane tetraacrylate, dipentaerythritol hexa ( Aliphatic (meth) acrylates such as meta) acrylates; aromatic epoxy (meth) acrylates such as phenol novolac type epoxy (meth) acrylates and cresol novolac type epoxy (meth) acrylates can be mentioned.

These (meth) acrylates may be used alone or in combination of two or more. Furthermore, these (meth) acrylates may be used in combination with other polymerizable monomers.

The content of the polymerizable monomer may be 10 to 60 parts by mass with respect to 100 parts by mass of the total mass of the curable resin component.

The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light or the like. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerizable initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.

Examples of the thermal radical polymerization initiator include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; t-butylperoxypivalate, t-hexylperoxypivalate, 1, 1,3,3-Tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis (2-ethylhexanoylperoxy) hexane, t-hexylperoxy-2-ethyl Hexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-hexylperoxyisopropylmonocarbonate, t-butylperoxy-3,5,5-trimethylhexano Ate, t-butylperoxylaurilate, t-butylperoxyisopropyl monocarbonate, t-butylperoxy-2-ethylhexyl monocarbonate, t-butylperoxybenzoate, t-hexylperoxybenzoate, 2,5-dimethyl Peroxyesters such as -2,5-bis (benzoylperoxy) hexane, t-butylperoxyacetate; 2,2'-azobisisobutyronitrile, 2,2'-azobis (2,4-dimethylvalero) Butyl), azo compounds such as 2,2'-azobis (4-methoxy-2'-dimethylvaleronitrile) and the like can be mentioned.

Examples of the photoradical polymerization initiator include benzoyl ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexylphenyl ketone and 2-hydroxy-2-methyl-1-phenylpropane. Α-Hydroxyketones such as -1-one, 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propane-1-one; bis (2,4,6-trimethyl) Examples thereof include benzoyl) phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide, and phosphine oxides such as 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

These thermal and photoradical polymerization initiators may be used alone or in combination of two or more.

The content of the polymerization initiator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the polymerizable monomer.

The curable resin component may further contain an insulating filler, a sensitizer, an antioxidant and the like as other components.

The insulating filler is added for the purpose of imparting low thermal expansion and low hygroscopicity to the resin composition.
Examples of the insulating filler include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramics. These insulating fillers may be used alone or in combination of two or more. The insulating filler may be particles whose surface is treated with a surface treatment agent from the viewpoint of dispersibility with a solvent. The surface treatment agent is not particularly limited, but a silane coupling agent or the like can be used.

The content of the insulating filler may be 5 to 20 parts by mass with respect to 100 parts by mass of the total mass of the curable resin component. When the content of the insulating filler is within the above range, the heat resistance tends to be further improved without hindering light transmission. Further, when the content of the insulating filler is within the above range, it may contribute to light peelability.

Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthene, indanslen, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4-. Examples thereof include isopropyl-9H-thioxanthene-9-one, 1-chloro-4-propoxythioxanthone and the like.

The content of the sensitizer may be 0.01 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin component. When the content of the sensitizer is within the above range, the influence on the characteristics and thin film property of the curable resin component tends to be small.

Examples of the antioxidant include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol, 2,2,6,6-tetramethylpiperidin-1-oxyl and 4-. Examples thereof include aminoxyl derivatives such as hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl and hindered amine derivatives such as tetramethylpiperidylmethacrylate.

The content of the antioxidant may be 0.1 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin component. When the content of the antioxidant is within the above range, it tends to be possible to suppress the decomposition of the curable resin component and prevent contamination.

In the present embodiment, a resin composition containing each curable resin component as described above is used as the temporary fixing resin composition. The temporary fixing resin composition of the present embodiment may have a shear viscosity of 9000 to 30000 Pa · s at 100 ° C. in an uncured state before curing. By setting the shear viscosity at 100 ° C. to 9000 to 30000 Pa · s, the temporary fixing resin composition before curing suppresses the creeping up of the temporary fixing resin composition to the side surface of the semiconductor chip, and the electrons on the chip surface are suppressed. The embedding property required for protecting the element (external connecting member such as an electrode and the wiring layer) can be improved. The shear viscosity at 100 ° C. can be measured by, for example, a rotary viscoelasticity measuring device using a sample prepared by preparing a temporary fixing resin composition to a predetermined thickness.

The cured product (resin cured product layer described later) obtained after curing the curable resin component contained in the temporary fixing resin composition has a storage elastic modulus of 5 to 200 MPa at 25 ° C. The cured product of the curable resin component may have a storage elastic modulus at 25 ° C. of 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more, and is 150 MPa or less, 100 MPa or less, 70 MPa or less, or 65 MPa or less. You may. The storage elastic modulus at 25 ° C. in the cured product of the curable resin component can be appropriately adjusted, and for example, a high Tg hydrocarbon resin that increases the proportion of the hydrocarbon resin that is a thermoplastic resin is applied. By adding an insulating filler or the like, the storage elastic modulus at 25 ° C. in the cured product of the curable resin component can be improved. When the storage elastic modulus of the cured product of the curable resin component at 25 ° C. is 5 MPa or more, the handleability is improved, the tip or the like is easily temporarily fixed to the support member without bending, and it is difficult to coagulate and break at the time of peeling, and further, it remains. Tends to decrease. When the storage elastic modulus at 25 ° C. in the cured product of the curable resin component is 200 MPa or less, the misalignment tends to be reduced when the chip or the like is mounted on the support member. In this specification, the storage elastic modulus of the cured product of the curable resin component means that it is measured by the curing method and the measuring procedure described in Examples.

The cured product obtained after curing the curable resin component may have a storage elastic modulus at 270 ° C. of 1.5 to 20 MPa. The storage elastic modulus of the cured product at 270 ° C. may be 15 MPa or less, 10 MPa or less, or 5 MPa or less. Here, the cured product refers to a product in a state in which no exothermic peak associated with curing is observed in the differential scanning calorimetry (DSC).

The resin layer 34 can be formed from a curable resin component (curable resin composition containing no conductive particles) containing a hydrocarbon resin which is a thermoplastic resin. The curable resin component may be diluted with a solvent and used as a varnish of the curable resin component. The solvent is not particularly limited as long as it can dissolve components other than the insulating filler. Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesityrene, cumene and p-simene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-dioxane and the like. Cyclic ethers; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone; Carbonated esters such as ethylene carbonate and propylene carbonate; amides such as N, N-dimethylformamide, N, N-dimethylacetamide and N-methyl-2-pyrrolidone can be mentioned. These solvents may be used alone or in combination of two or more. Of these, the solvent may be toluene, xylene, heptane, or cyclohexane from the viewpoint of solubility and boiling point. The concentration of solid components in the varnish may be 10 to 80% by mass based on the total mass of the varnish.

The varnish of the curable resin component can be prepared by mixing and kneading the curable resin component containing a hydrocarbon resin and a solvent. Mixing and kneading can be carried out by appropriately combining a normal stirrer, a raker, a triple roll, a disperser such as a bead mill, and the like.

The resin layer 34 can be formed by directly applying the curable resin component to the light absorption layer 32. When a varnish of a curable resin component diluted with a solvent is used, it can be formed by applying the curable resin component to the light absorption layer 32 and heating and drying the solvent to remove it.

The resin layer 34 can also be formed by producing a curable resin component film composed of a curable resin component. For example, a curable resin component film can be produced by applying a thermosetting component varnish on a support film and heating and drying to remove volatile components such as a solvent. By pressing or laminating the curable resin component film thus produced on the light absorption layer 32 formed on the support base material 10, the temporary fixing material precursor layer 30 is placed on the support base material 10. Is formed.

The thickness of the resin layer 34 can be adjusted according to the thickness of the temporary fixing material layer 30c. The thickness of the resin layer 34 is 20 to 20 to the height of the convex portion of the electronic element from the viewpoint of embedding the external connection member (including the external connection terminal such as an electrode) formed on the semiconductor chip and the electronic element such as the wiring layer. It may be formed to be 50 μm thick. When the thickness of the resin layer 34 is 20 μm or more thicker than the height of the convex portion of the electronic element, it is possible to prevent the electronic element from coming into contact with the support and deforming, and when it is 50 μm or less, the unevenness of the semiconductor element can be sufficiently embedded. Can be done.

In addition to using the above-mentioned curable resin component film, a laminated film for temporary fixing having a light absorbing layer 32 and a resin layer 34 (hereinafter, together with the above-mentioned "thermosetting resin component film", "for temporary fixing" The temporary fixing material precursor layer 30 can also be formed by preparing a “resin film” in advance and laminating it so that the light absorbing layer 32 and the support member 10 are in contact with each other.

The laminated structure of the light absorbing layer 32 and the resin layer 34 in the temporary fixing resin film is not particularly limited as long as it has the light absorbing layer 32 and the resin layer 34. For example, the light absorbing layer Examples thereof include a configuration having 32 and a resin layer 34, a configuration having a light absorption layer 32, a resin layer 34, and a light absorption layer 32 in this order. Of these, the temporary fixing resin film may have a structure having a light absorption layer 32 and a resin layer 34. The light absorption layer 32 may be a layer made of a conductor (conductor layer) or a layer containing conductive particles. The temporary fixing resin film may be provided on the support film, or a protective film may be provided on the surface opposite to the support film, if necessary.

The supporting film is not particularly limited, and for example, polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, and poly. Examples thereof include ether sulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, poly (meth) acrylate, polysulfone, and a film of liquid crystal polycarbonate. These may be subjected to a mold release process. The thickness of the support film may be, for example, 3 to 250 μm.

Examples of the protective film include polyesters such as polyethylene terephthalate, polybutylene terephthalate and polyethylene naphthalate; and polyolefins such as polyethylene and polypropylene. The thickness of the protective film may be, for example, 10 to 250 μm.

The thickness of the light absorption layer 32 in the temporary fixing resin film may be 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm (0.05 to 3 μm) from the viewpoint of light peelability.

The temporary fixing resin film is 20 to 50 μm from the height of the convex portion of the electronic element from the viewpoint of embedding the external connecting member (including the external connecting terminal such as an electrode) formed on the semiconductor chip and the electronic element such as the wiring layer. It may be thickly formed. When the thickness of the temporary fixing resin film is formed to be 20 μm or more thicker than the height of the convex portion of the electronic element, it is possible to prevent the electronic element from coming into contact with the support and being deformed. The unevenness can be sufficiently embedded. When there is no unevenness on the semiconductor chip, it may be 0.1 to 100 μm. In the temporary fixing resin film, the light absorption layer functions as an embedding layer of the electronic element in the same manner as the resin layer.

The temporary fixing material precursor layer 30 having the configuration shown in FIG. 2B can be produced, for example, by forming a resin layer 34 on the support member 10 and then forming a light absorption layer 32. The temporary fixing material precursor layer 30 having the configuration shown in FIG. 2C can be produced, for example, by alternately forming the light absorption layer 32, the resin layer 34, and the light absorption layer 32 on the support member 10. can. These temporary fixing material precursor layers 30 may be produced by preparing a laminated film for temporary fixing material having the above-mentioned structure in advance and laminating it on the support member 10.

The thickness of the temporary fixing material precursor layer 30 (the total thickness of the light absorbing layer 32 and the resin layer 34) may be the same as the thickness of the temporary fixing resin film described above.

Next, a semiconductor device is placed on the prepared temporary fixing material precursor layer, the curable resin component in the temporary fixing material precursor layer is cured, and a cured resin product containing a light absorbing layer and a cured product of the curable resin component. By forming the temporary fixing material layer having the layer, a laminated body in which the support member 10, the temporary fixing material layer 30c, and the semiconductor device 40 are laminated in this order is produced (FIG. 1 (b)). 3 (a), (b), (c), and (d) are schematic cross-sectional views showing an embodiment of a laminated body formed by using the temporary fixing material precursor layer shown in FIG. 2 (a). Is.

The semiconductor device 40 may be a semiconductor wafer or a semiconductor chip obtained by cutting a semiconductor wafer into a predetermined size and fragmenting it into chips. When a semiconductor chip is used as the semiconductor device 40, a plurality of semiconductor chips are usually used. The thickness of the semiconductor device 40 is 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm from the viewpoint of suppressing cracks during transportation, processing, etc., in addition to miniaturization and thinning of the semiconductor device. good. The semiconductor wafer or semiconductor chip may be provided with an external connection member having a rewiring layer, a pattern layer, or an external connection terminal.

The produced support member 10 provided with the temporary fixing material precursor layer 30 can be installed on a vacuum press or a vacuum laminator, and the semiconductor device 40 can be arranged by crimping with a press.

When a vacuum press is used, for example, the semiconductor device 40 is crimped to the temporary fixing material precursor layer 30 at an atmospheric pressure of 1 hPa or less, a crimping pressure of 1 MPa, a crimping temperature of 120 to 200 ° C., and a holding time of 100 to 300 seconds.

When using a vacuum laminator, for example, the atmospheric pressure is 1 hPa or less, the crimping temperature is 60 to 180 ° C. or 80 to 150 ° C., the laminating pressure is 0.01 to 0.5 MPa or 0.1 to 0.5 MPa, and the holding time is 1 to 600 seconds or The semiconductor device 40 is pressure-bonded to the temporary fixing material precursor layer 30 in 30 to 300 seconds.

After arranging the semiconductor device 40 on the support member 10 via the temporary fixing material precursor layer 30, the curable resin component in the temporary fixing material precursor layer 30 is thermally cured or photocured under predetermined conditions. The conditions for thermosetting may be, for example, 300 ° C. or lower or 100 to 200 ° C. for 1 to 180 minutes or 1 to 60 minutes. In this way, a cured product of the curable resin component is formed, the semiconductor device 40 is temporarily fixed to the support member 10 via the temporary fixing material layer 30c containing the cured product of the curable resin component, and the laminate 300 is formed. can get. As shown in FIG. 3A, the temporary fixing material layer 30c can be composed of a light absorption layer 32 and a resin cured product layer 34c containing a cured product of a curable resin component.

The laminate can also be produced, for example, by arranging a semiconductor device after forming a temporary fixing material layer. 5A and 5B are schematic cross-sectional views for explaining another embodiment of the method for manufacturing the laminate shown in FIG. 1A, and FIGS. 5A, 5B, and 5C are steps. It is a schematic cross-sectional view which shows. Each step of FIG. 5 uses the temporary fixing material precursor layer shown in FIG. 2A. In the laminated body, a temporary fixing material precursor layer 30 containing a curable resin component is formed on the support member 10 (FIG. 5A), and the curable resin component in the temporary fixing material precursor layer 30 is cured and cured. It can be produced by forming a temporary fixing material layer 30c containing a cured product of a sex resin component (FIG. 5B) and arranging the semiconductor device 40 on the formed temporary fixing material layer 30c (FIG. 5 (FIG. 5)). c)). In such a manufacturing method, since the wiring layer 41 such as the rewiring layer and the pattern layer can be provided on the temporary fixing material layer 30c before the semiconductor device 40 is arranged, the semiconductor device 40 is placed on the wiring layer 41. By arranging them, the semiconductor device 40 having the wiring layer 41 can be formed.

The semiconductor device 40 (semiconductor device 40 temporarily fixed to the support member 10) in the laminate 100 may be further processed. By processing the semiconductor device 40 in the laminate 300 shown in FIG. 3 (a), the laminate 310 (FIG. 3 (b)), 320 (FIG. 3 (c)), 330 (FIG. 3 (d)) and the like can be obtained. can get. The processing of the semiconductor device is not particularly limited, and examples thereof include thinning of the semiconductor device, fabrication of through electrodes, formation of wiring layers such as a rewiring layer and a pattern layer, etching treatment, plating reflow treatment, and sputtering treatment. ..

The thinning of the semiconductor device can be performed by grinding the surface of the semiconductor device 40 opposite to the surface in contact with the temporary fixing material layer 30c with a grinder or the like. The thickness of the thinned semiconductor device may be, for example, 100 μm or less.

The grinding conditions can be arbitrarily set according to the desired thickness of the semiconductor device, the grinding state, and the like.

Through electrodes are produced by performing dry ion etching, bosh process, etc. on the surface of the thinned semiconductor device 40 opposite to the surface in contact with the temporary fixing material layer 30c to form through holes, and then forming through holes. It can be performed by processing such as copper plating.

In this way, the semiconductor device 40 is processed, for example, the semiconductor device 40 is thinned, and a laminated body 310 (FIG. 3B) provided with the through electrodes 44 can be obtained.

As shown in FIG. 3C, the laminate 310 shown in FIG. 3B may be covered with the sealing layer 50. The material of the sealing layer 50 is not particularly limited, but may be a thermosetting resin composition from the viewpoint of heat resistance, other reliability, and the like. Examples of the thermosetting resin used for the sealing layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. Additives such as fillers and / or flame-retardant substances such as brom compounds may be added to the composition for forming the sealing layer 50.

The supply form of the sealing layer 50 is not particularly limited, but may be a solid material, a liquid material, a fine-grained material, a film material, or the like.

For sealing the semiconductor device 42 after processing by the sealing layer 50 formed from the sealing film, for example, a compression sealing molding machine, a vacuum laminating device, or the like is used. A seal that has been heat-melted using the above equipment under the conditions of, for example, 40 to 180 ° C. (or 60 to 150 ° C.), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes. The sealing layer 50 can be formed by covering the processed semiconductor device 42 with a waterproof film. The sealing film may be prepared in a state of being laminated on a release liner such as a polyethylene terephthalate (PET) film. In this case, the sealing layer 50 can be formed by arranging the sealing film on the processed semiconductor device 42, embedding the processed semiconductor device 42, and then peeling off the release liner. In this way, the laminated body 320 shown in FIG. 3C can be obtained.

The thickness of the sealing film is adjusted so that the sealing layer 50 is equal to or larger than the thickness of the processed semiconductor device 42. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

As shown in FIG. 3D, the processed semiconductor device 42 having the sealing layer 50 may be individualized by dicing. In this way, the laminated body 330 shown in FIG. 3D can be obtained. The individualization by dicing may be carried out after the separation step of the semiconductor device described later.

<Separation process of semiconductor devices>
As shown in FIG. 1B, in the process of separating the semiconductor device, the temporary fixing material layer 30c in the laminated body 100 is irradiated with light to separate the semiconductor device 40 from the support member 10.

FIG. 4 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device of the present invention using the laminate shown in FIG. 3 (d), and FIGS. 4 (a) and 4 (b) are shown. It is a schematic cross-sectional view which shows each process.

When the temporary fixing material layer 30c is irradiated with light, the light absorbing layer 32 contained in the temporary fixing material layer 30c absorbs the light and instantaneously generates heat, and the cured resin layer 34c is generated at the interface or the bulk. , Stress between the support member 10 and the semiconductor device 40 (or the processed semiconductor device 42), scattering of the light absorption layer 32, and the like may occur. Due to the occurrence of such a phenomenon, the temporarily fixed processed semiconductor device 42 can be easily separated (peeled) from the support member 10. In the separation step, a slight stress may be applied to the processed semiconductor device 42 in a direction parallel to the main surface of the support member 10 together with the irradiation of light.

The light in the separation step may be incoherent light. Incoherent light is an electromagnetic wave having properties such as no interference fringes, low coherence, and low directivity, and tends to be attenuated as the optical path length becomes longer. Incoherent light is light that is not coherent light. Laser light is generally coherent light, whereas light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be said to be light excluding laser light. Since the irradiation area of the incoherent light is overwhelmingly wider than that of the coherent light (that is, laser light), the number of irradiations can be reduced (for example, once).

The light in the separation step may be light including at least infrared light. The light source of the light in the separation step is not particularly limited, but may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by application / discharge in an arc tube filled with xenon gas. Since the xenon lamp discharges while repeating ionization and excitation, it has a stable continuous wavelength from the ultraviolet light region to the infrared light region. Since the xenon lamp requires a shorter start time than a lamp such as a metal halide lamp, the time required for the process can be significantly shortened. Further, since it is necessary to apply a high voltage for light emission, high heat is generated instantaneously, but the cooling time is short and continuous work is possible. Further, since the irradiation area of the xenon lamp is overwhelmingly larger than that of the laser beam, the number of irradiations can be reduced (for example, once).

As the irradiation conditions by the xenon lamp, the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), irradiation energy and the like can be arbitrarily set. As the irradiation condition by the xenon lamp, a condition that can be separated by one irradiation may be set, or a condition that can be separated by two or more irradiations may be set, but the damage of the semiconductor device 42 after processing is reduced. From the viewpoint, the irradiation condition by the xenon lamp may be set to the condition that can be separated by one irradiation.

The separation step may be a step of irradiating the temporary fixing material layer 30c with light via the support member 10 (direction A in FIG. 4A). That is, the irradiation of the temporary fixing material layer 30c with light may be irradiation from the support member 10 side. By irradiating the temporary fixing material layer 30c with light via the support member 10, it is possible to irradiate the entire temporary fixing material layer 30c.

When the semiconductor device 40 or the processed semiconductor device 42 is separated from the support member 10, the remaining 30c'of the temporary fixing material layer on the semiconductor device 40 or the processed semiconductor device 42 (FIGS. 4A and 4B). If they are attached, they can be separated (peeled) by washing with a solvent. The solvent is not particularly limited, and examples thereof include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These may be used individually by 1 type or in combination of 2 or more type. Further, it may be immersed in these solvents, or ultrasonic cleaning may be performed. Further, it may be heated in the range of 100 ° C. or lower.

By separating the semiconductor device from the support member in this way, a semiconductor element 60 including the semiconductor device 40 or the processed semiconductor device 42 can be obtained (FIG. 4 (b)). A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting the semiconductor element.

[Resin film for temporary fixing]
As described above, the temporary fixing resin film of the present embodiment has a resin layer containing at least a curable resin component, and has a light absorbing layer that absorbs light and generates heat, if necessary. The curable resin component contains a hydrocarbon resin, and the cured product of the curable resin component has a storage elasticity at 25 ° C. of 5 to 100 MPa. The temporary fixing resin film having such a structure can be suitably used as a temporary fixing material for temporarily fixing the semiconductor device to the support member.

The temporary fixing resin film may be provided with a release layer instead of the light absorption layer 32 in order to facilitate the separation of the semiconductor device 40 or the processed semiconductor device 42 from the support member 10. Further, in the case of a temporary fixing resin film having a light absorption layer 32, a release layer may be provided between the support member 10 and the light absorption layer 32, or between the light absorption layer 32 and the resin layer 34. Thereby, the semiconductor device 40 or the processed semiconductor device 42 can be easily separated.

Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

[Examples 1 and 2 and Comparative Examples 1 to 3]
-Preparation of resin film for temporary fixing-
A varnish for forming a temporary fixing resin film was prepared with the composition of parts by mass shown in Table 1. The prepared varnish is applied onto the release-treated surface of a release-treated polyethylene terephthalate film (A31, thickness 38 μm, manufactured by Teijin Film Solution Co., Ltd.) used as a support film, and applied at 90 ° C. for 5 minutes at 100 ° C. It was heated and dried for 5 minutes. Then, the film was further bonded onto the resin layer as a cover film to obtain a temporary fixing resin film having a cover film and a support film, respectively. The materials shown in Table 1 are as follows.
Thermoplastic resin FG1924GT: Maleic anhydride-modified styrene / ethylene / butylene / styrene block copolymer (manufactured by Clayton Polymer Japan Co., Ltd., styrene content: 13% by mass)
FG1904GT: Maleic anhydride-modified styrene / ethylene / butylene / styrene block copolymer (manufactured by Clayton Polymer Japan Co., Ltd., styrene content: 30% by mass)
KK2: Acrylic rubber with a weight average molecular weight of 300,000 by GPC and TG-30 ° C (manufactured by Hitachi Kasei Co., Ltd.)
-Thermosetting resin HP7200H: Dicyclopentadiene type epoxy resin (manufactured by DIC Corporation)
HP4710: Naphthalene skeleton epoxy resin (manufactured by DIC Corporation)
N-500P-10: Cresol novolac type polyfunctional epoxy resin (manufactured by DIC Corporation)
MEH7800M: Phenolic curing agent (manufactured by Meiwa Kasei Co., Ltd.)
-Antioxidant AO-60: Hindered phenolic antioxidant (manufactured by ADEKA Corporation)
-Curing accelerator 2PZ-CN: Imidazole-based curing accelerator (manufactured by Shikoku Kasei Kogyo Co., Ltd.)

-Preparation of light absorption layer-
A light absorption layer in which the first conductor layer is titanium and the second conductor layer is copper is prepared by sputtering on a slide glass (size: 40 mm × 40 mm, thickness: 0.8 μm) which is a support member. A support member provided with a light absorption layer was obtained. The light absorbing layer is shown in Table 2 after pretreatment by reverse sputtering (Ar flow rate: 1.2 × ^10-2 Pa · m ³ / s (70 sccm), RF power: 300 W, time: 300 seconds). It was produced by performing RF sputtering under the treatment conditions and setting the thickness of the titanium layer / copper layer to 50 nm / 200 nm.

-Laminated body-
In Examples 1 and 2 and Comparative Examples 1 to 3 on a support in which a light absorbing layer in which the first conductor layer is titanium and the second conductor layer is copper is formed on the slide glass by sputtering. The protective film of the temporary fixing resin film produced using the temporary fixing resin composition shown is peeled off, laminated at 100 ° C., a semiconductor chip is mounted on the protective film, and then heated at 130 ° C. for 30 minutes, followed by 200. The temporary fixing resin film was cured by heating at ° C. for 1 hour. Then, a pressure and heat of 80 ° C./25N/0 seconds, 195 ° C./25N/2.5 seconds, and 270 ° C./25N/3.5 seconds were continuously applied onto the semiconductor chip. Then, encapsulation molding is performed using the following encapsulant under the conditions of 150 ° C./5 MPa and 0.7 Torr on a support scale, and the encapsulant is cured by heating at 150 ° C./6 hours to absorb light. A laminated body of a support with a layer / a resin film for temporary fixing / a chip for a semiconductor / a sealing material was produced.
-Encapsulant: CEL-400ZHF40-W5G (manufactured by Hitachi Kasei Co., Ltd.)

The properties and characteristics of the temporary fixing resin film produced by using the temporary fixing resin compositions shown in Examples 1 and 2 and Comparative Examples 1 to 3 were evaluated by the following methods.
-Lamination property-
A silicon mirror wafer with a thickness of 775 μm at 100 ° C. using a small laminating machine (FIRST LAMINATOR, manufactured by Taisei Laminator Co., Ltd.) after peeling off the coating base material on the second layer side of the two-layer film-like temporary fixing material. Laminated on (12 inches). Then, the surface was visually confirmed, the presence or absence of voids was observed, and the laminateability was evaluated. The evaluation criteria are as follows. The results are shown in Table 3.
×: When voids occur ○: When voids do not occur

-100 ° C shear viscosity before curing-
The shear viscosity of the temporary fixing resin film before curing was evaluated by the following method. A single-layer film for measurement in which either the first layer or the second layer is adjusted to a thickness of 80 μm is laminated at 100 ° C., the thickness is adjusted to 160 μm, and then a rotary viscoelasticity measuring device (TA) is used. -The shear viscoelasticity was measured using ARES) manufactured by Instruments Co., Ltd. The measurement method is "parall plate", the measurement jig is a circular jig with a diameter of 8 mm, the measurement mode is "Dynamic temperature ram", the frequency is 1 Hz, and the single layer film for measurement is distorted by 5% at 35 ° C. The temperature was raised to 120 ° C. at a heating rate of 20 ° C./min, and the viscosity of the measuring film when the temperature reached 100 ° C. was measured.
The results are shown in Table 3.

-Elastic modulus at 270 ° C after curing-
The storage elastic modulus of the temporary fixing resin film after curing was evaluated by the following method. A temporary fixing resin film for measurement adjusted to a thickness of 80 μm was laminated at 100 ° C. This was heated in an oven at 130 ° C. for 30 minutes and then at 170 ° C. for 2 hours to cure the film, and then further heated at 200 ° C. for 1 hour. Then, it was cut out into a width of 4 mm and a length of 33 mm in the width direction. The cut out single-layer film for measurement was set in a dynamic viscoelastic device (product name: Rheogel-E4000, manufactured by UBM Co., Ltd.), and a tensile load was applied to measure at a frequency of 10 Hz and a temperature rise rate of 3 ° C./min. The storage elastic modulus at 270 ° C. was measured. The results are shown in Table 3.

-Embedability-
The protective film side of the temporary fixing resin film (thickness excluding the support film and protective film: 80 μm) is peeled off on the support (slide glass), laminated at 100 ° C, and 130 ° C / 50N / 10 seconds on it. A semiconductor chip having a semicircular step of 7.3 mm × 7.3 mm, a thickness of 150 μm, and a surface of 40 μm was mounted under the above conditions. Here, the difference between the thickness of the temporarily fixed resin layer and the semicircular step (corresponding to the height between the irregularities) on the surface of the semiconductor chip is 40 μm. Then, the resin film for temporary fixing was cured by heating at 130 ° C. for 30 minutes and then at 200 ° C. for 1 hour. The sample thus obtained was observed from the slide glass surface, the image was analyzed with a soft wafer such as Photoshop (registered trademark), and it was observed whether voids were generated between the semiconductor chip and the resin film for temporary fixing. .. The results are shown in Table 3.
×: When voids occur ○: When voids do not occur

-Resin creeping up-
Two samples obtained from the above evaluation of embedding property can be prepared, and one can be cast with epoxy resin as it is, and the cross section of the slide glass / temporary fixing resin film / semiconductor chip can be observed. The edge of the semiconductor chip was confirmed, and the amount of resin creeping up of the temporary fixing resin film when the semiconductor chip was mounted was confirmed. The other sample continuously applies pressure and heat of 80 ° C./25N/0 seconds, 195 ° C./25N/2.5 seconds, 270 ° C./25N/3.5 seconds on the semiconductor chip, and then on the epoxy resin. Casting is performed, and the slide glass / resin film for temporary fixing / semiconductor chip is polished so that the cross section can be observed, the end of the semiconductor chip is confirmed, and the amount of resin creeping up of the resin film for temporary fixing when the semiconductor chips are laminated. It was confirmed. The results are shown in Table 3.
×: When the amount of resin creeping up to the side surface of the chip is 31 μm or more 〇: When the amount of resin creeping up to the side surface of the chip is 30 μm or less

-270 ° C heat resistance-
The heat resistance of the temporary fixing resin film at 270 ° C. was evaluated by the following method. A silicon mirror wafer (6 inches) having a thickness of 625 μm was diced into small pieces of 25 mm × 25 mm by blade dicing. A resin film for temporary fixing was roll-laminated at 100 ° C. on the surface of the fragmented silicon mirror wafer. Next, a slide glass having a thickness of 0.1 to 0.2 mm and a size of about 18 mm × 18 mm is roll-laminated on a temporary fixing resin film at 100 ° C., and the temporary fixing resin film is a silicon wafer and a slide glass. A laminated sample sandwiched between the two was prepared. The obtained sample was heated at 130 ° C. for 30 minutes, then heated at 200 ° C. for 1 hour to cure the temporary fixing resin film, and then heated at 270 ° C. for 60 minutes. The sample thus obtained is observed from a slide glass surface, the image is analyzed with a soft wafer such as Photoshop (registered trademark), and the heat resistance at 200 ° C. is determined from the ratio of voids to the total area of the temporary fixing resin film. Gender was evaluated. The evaluation criteria are as follows. The results are shown in Table 3.
◯: When the ratio of voids is less than 5% ×: When the ratio of voids is 5% or more

-Removability-
The laminate was irradiated with a xenon lamp under irradiation conditions of an applied voltage of 4000 V, a pulse width of 200 μs, an irradiation distance of 50 mm, an irradiation frequency of 1 time, and an irradiation time of 200 μs, and the peelability from the support member was evaluated. The xenon lamp is S2300 manufactured by Xenon (wavelength range: 270 nm to near infrared region, irradiation energy per unit area: 7 J / cm ² (predicted value, irradiation condition A), 13 J / cm ² (predicted value, irradiation condition). Using B)), xenon lamp irradiation was performed from the support member (slide glass) side of the laminated body. The irradiation distance is the distance between the light source and the stage on which the slide glass is installed. In the evaluation of the peelability test, the semiconductor chip that spontaneously peeled off from the slide glass after irradiation with the xenon lamp was evaluated as "◯", and the one that did not separate under the main irradiation conditions was evaluated as "x". The results are shown in Table 3.

As shown in Table 3, the curable resin component contained in the temporary fixing resin composition has a shear viscosity of 9000 to 30,000 MPa at 100 ° C. in an uncured state before curing, and 270 ° C. as a cured product obtained after curing. The laminates of Examples 1 and 2 having a storage elastic modulus of 1.5 to 20 MPa do not satisfy at least one of the requirements of the shear viscosity at 100 ° C. and the storage elastic modulus at 270 ° C. It was possible to significantly suppress the resin crawling while having excellent embedding property as compared with the laminated body of. As described above, it can be seen that the laminates of Examples 1 and 2 can satisfy both requirements. Further, it had excellent properties in heat resistance at 270 ° C. and peelability from the support member. From the above results, it was confirmed that the temporary fixing material resin composition of the present invention shows good results in the production of semiconductor devices. Thereby, the adverse effect on the reliability of the semiconductor device can be eliminated.

As described above, according to the present invention, it is useful as a temporary fixing material because it can suppress creeping up to the side surface of the chip and can reliably protect the electronic element (external connection member and wiring layer) on the surface of the chip. It is possible to provide a temporary fixing resin composition and a temporary fixing resin film having the temporary fixing resin composition. Thereby, it is possible to provide a method for manufacturing a semiconductor device capable of easily separating the temporarily fixed semiconductor device from the support member.

10 ... Support member, 30 ... Temporary fixing material precursor layer, 30c ... Temporary fixing material layer, 32 ... Light absorbing layer, 34 ... Resin layer, 34c ... Resin cured product layer , 40 ... semiconductor device, 41 ... wiring layer, 42 ... processed semiconductor device, 44 ... through electrode, 50 ... sealing layer, 60 ... semiconductor element, 100, 300 , 310, 320, 330 ... Laminated body.

Claims (12)

A resin composition for temporary fixing contained in a resin layer constituting a temporary fixing material layer formed on a support member for temporary fixing of a semiconductor chip.
The resin composition for a temporary fixing material has a shear viscosity of 9000 to 30,000 Pa · s at 100 ° C. in an uncured state before curing, and has a storage elastic modulus of 1.5 to 270 ° C. as a cured product obtained after curing. A resin composition for temporary fixing, which is 20 MPa. The temporary fixing resin composition according to claim 1, wherein the temporary fixing resin composition contains a thermoplastic resin and a curable resin. The temporary fixing resin composition according to claim 1 or 2, wherein the temporary fixing resin composition further contains an antioxidant. The temporary fixing resin composition according to any one of claims 1 to 3, wherein the temporary fixing resin composition further contains a curing accelerator. A temporary fixing resin film having a support film and a resin layer formed on the support film and containing the temporary fixing resin composition according to any one of claims 1 to 4. The temporary fixing resin film according to claim 5, further comprising a light absorbing layer and a resin layer containing the temporary fixing resin composition, which are formed by being laminated on the supporting film. The resin film for temporary fixing according to claim 5 or 6, wherein the temporary fixing material layer is 20 to 50 μm thicker than the height of the convex portion of the external connecting member and the wiring layer on the surface of the semiconductor chip. The resin is used on the support member by using the temporary fixing resin composition according to any one of claims 1 to 4 or the temporary fixing resin film according to any one of claims 5 to 7. The process of forming a temporary fixing material layer having a layer and
A process of mounting a semiconductor chip having an external connecting member and a wiring layer on the surface of the temporary fixing material layer, and
The step of curing the temporary fixing material layer with heat or light, and
The process of processing the semiconductor chip and
A process of manufacturing a semiconductor device by collectively sealing the semiconductor chip mounted on the support member or the processed semiconductor chip.
A step of separating the semiconductor device from the support member, and
A method for manufacturing a semiconductor device, comprising a step of separating the temporary fixing material layer from the semiconductor device. The method for manufacturing a semiconductor device according to claim 8, wherein at least one of a release layer and a light absorption layer is formed on the support member. The separation between the semiconductor device and the support member is performed by irradiating the temporary fixing material layer having at least the light absorption layer with light so that the light absorption layer absorbs light and generates heat. The method for manufacturing a semiconductor device according to claim 9. The method for manufacturing a semiconductor device according to claim 10, wherein the light is light containing at least infrared light. The method for manufacturing a semiconductor device according to claim 10 or 11, wherein the step of separating the semiconductor device from the support member is performed by irradiating the temporary fixing material layer with the light via the support member.

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