JPWO2020111193A1 - Method for manufacturing semiconductor devices, light absorption laminates, and temporary fixing laminates - Google Patents

Abstract

The process of processing a semiconductor member that is temporarily fixed to the support member via the temporary fixing material layer, and the temporary fixing laminate is irradiated with incoherent light from the support member side, thereby supporting the semiconductor member. Disclosed is a method of manufacturing a semiconductor device, comprising a step of separating from the semiconductor device in this order. A part or all of the temporary fixing material layer is a light absorbing layer that absorbs light and generates heat. The transmittance of the support member with respect to incoherent light is 90% or more. The transmittance of the temporary fixing material layer to incoherent light is 3.1% or less.

Description

The present invention relates to a method for manufacturing a semiconductor device, a light absorption laminate, and a temporary fixing laminate.

In the manufacture of semiconductor elements, the semiconductor member may be processed after the integrated circuit is incorporated into the semiconductor member such as a semiconductor wafer. The semiconductor member is subjected to a processing process such as grinding the back surface or dicing, for example. The semiconductor member is usually processed in a state of being temporarily fixed to the support member, and then the semiconductor member is separated from the support member. For example, in Patent Document 1, as a method of separating a semiconductor member from a support member, the semiconductor member is temporarily fixed to the support member via a temporary fixing material layer, and the semiconductor member is physically removed from the support member while being heated after processing. It discloses a method of separation. Patent Documents 2 and 3 disclose a method of separating a semiconductor member from a support member by irradiating the temporary fixing material layer with a laser.

Japanese Unexamined Patent Publication No. 2012-126803 Japanese Unexamined Patent Publication No. 2016-138182 Japanese Unexamined Patent Publication No. 2013-033814

The present invention relates to a method for manufacturing a semiconductor device, which comprises a step of processing a semiconductor member temporarily fixed to a support member, wherein the processed semiconductor member can be easily separated from the support member by a simple process. offer.

The method for manufacturing a semiconductor device according to one aspect of the present invention is
A temporary fixing laminate including a support member and a temporary fixing material layer provided on the supporting member, wherein the temporary fixing material layer is a curable resin containing at least one outermost surface of the temporary fixing material layer. The process of preparing a temporary fixing laminate having a layer,
The semiconductor member having the semiconductor substrate and the rewiring layer provided on one surface side of the semiconductor substrate is oriented so that the rewiring layer is located on the curable resin layer side, via the temporary fixing material layer. The process of temporarily fixing to the support member and
A process of processing the semiconductor member temporarily fixed to the support member, and
A step of irradiating the temporary fixing laminate with incoherent light from the support member side and thereby separating the semiconductor member from the support member.
Are prepared in this order.
The temporary fixing material layer has a light absorbing layer that absorbs light and generates heat. The light absorbing layer is provided as a part of the curable resin layer or as a layer separate from the curable resin layer. The transmittance of the support member with respect to the incoherent light is 90% or more. The transmittance of the temporary fixing material layer with respect to the incoherent light is 3.1% or less.

According to the above method, the processed semiconductor member can be easily separated from the support member by a simple process of irradiation with incoherent light. Irradiation of incoherent light can be easily performed because it is easy to secure a large irradiation area as compared with irradiation of laser which is coherent light. By including a combination of a support member having a specific transmittance and a light absorption layer in the temporary fixing material layer, the semiconductor member can be easily separated from the support member even when irradiated with incoherent light. can.

According to the present invention, with respect to a method of manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a support member, the processed semiconductor member can be easily separated from the support member by a simple process. The method is provided. In the method of the present invention, the processed semiconductor member can be easily separated from the support member even with incoherent light having a relatively small amount of energy. By using incoherent light having a small amount of energy, it is possible to suppress damage to a fine structure such as a rewiring layer of a semiconductor member.

(A), (b) and (c) are schematic diagrams showing an embodiment of a method for manufacturing a semiconductor device. It is a schematic diagram which shows one Embodiment of a light absorption laminate. (A) and (b) are schematic diagrams showing an embodiment of a method for manufacturing a semiconductor device. (A) and (b) are schematic diagrams showing an embodiment of a method for manufacturing a semiconductor device. (A), (b) and (c) are schematic diagrams showing an embodiment of a method for manufacturing a semiconductor device.

Hereinafter, some embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.

The size of the components in each figure referred to herein is conceptual, and the relative size relationships between the components are not limited to those shown in each figure. Duplicate explanations may be omitted.

Numerical values and their ranges herein also do not limit the scope of the invention. The numerical range indicated by using "~" in the present specification indicates a range including the numerical values before and after "~" as the minimum value and the maximum value, respectively. In the numerical range described stepwise in the present specification, the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. good. In the numerical range described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.

As used herein, (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto. The same applies to other similar expressions such as (meth) acrylate and (meth) acryloyl group.

In order to manufacture a semiconductor device, a temporary fixing laminate for temporarily fixing the semiconductor member to the support member is prepared while processing the semiconductor member. FIG. 1 is a cross-sectional view showing some embodiments of a temporary fixing laminate. The temporary fixing laminate 1 shown in FIG. 1 has a support member 10 and a temporary fixing material layer 30 provided on the support member 10. The temporary fixing material layer 30 has a curable resin layer 31. The curable resin layer 31 includes the outermost surface S on the side opposite to the support member 10 of the temporary fixing material layer 30. In addition, the temporary fixing material layer 30 has a light absorption layer 32 provided as a layer separate from the curable resin layer 31, or a light absorption layer 31B provided as a part of the curable resin layer 31. The light absorption layers 32 and 31B are layers that absorb light and generate heat.

The temporary fixing material layer 30 of the temporary fixing laminate 1 shown in FIG. 1A is a curable resin layer 31 including the outermost surface S on the opposite side of the support member 10, and the curable resin layer 31. It has a light absorbing layer 32 provided as another layer. In other words, the light absorption layer 32 and the curable resin layer 31 are laminated in this order on the support member 10.

The temporary fixing material layer 30 of the temporary fixing laminate 1 shown in FIG. 1B is composed of a curable resin layer 31 including a light absorption layer 31B as a part thereof. The curable resin layer 31 here has a light absorption layer 31B including the outermost surface S and a substantially non-thermosetting curable resin layer 31A provided on the support member 10 side of the light absorption layer 31B. ..

In the case of the temporary fixing material layer 30 of the temporary fixing laminate 1 shown in FIG. 1 (c), in addition to the same light absorbing layer 31B as in FIG. 1 (b), the light absorbing layer 32 is a curable resin layer 31. It is further provided as a separate layer from the above. Instead of the light absorbing layer 32 provided as a layer separate from the curable resin layer 31, a light absorbing layer forming a part of the curable resin layer 31 is placed between the curable resin layer 31A and the support member 10. Further may be provided.

The temporary fixing laminate 1 can be obtained, for example, by sequentially forming each layer on the support member 10. A laminated film having a curable resin layer and a light absorbing layer may be prepared and laminated on the support member 10. It is also possible to prepare the light absorption laminate illustrated in FIG. 2 and use it to obtain the temporary fixing laminate 1. The light absorption laminate 3 shown in FIG. 2 has a support member 10 and a light absorption layer 32 provided on the support member 10. The light absorption layer 32 may be a metal layer adjacent to the support member 10. The transmittance of the metal layer as the light absorption layer 32 with respect to the incoherent light emitted from the xenon lamp is 3.1% or less, 3.0% or less, 2.5% or less, or 1.5% or less. It may be 0% or more. The temporary fixing laminate 1 of FIG. 1 can also be regarded as a laminate composed of a light absorption laminate and a curable resin layer. For example, the temporary fixing laminate 1 of FIG. 1 can be manufactured by a method including a step of forming a curable resin layer 32 on the light absorption layer 32 of the light absorption laminate 3.

3, FIG. 4 and FIG. 5 are process diagrams showing an embodiment of a method of manufacturing a semiconductor device using a temporary fixing laminate. Here, the method using the temporary fixing laminate 1 of FIG. 1A is exemplified, but a semiconductor device can also be manufactured in the same manner using the temporary fixing laminate 1 having another configuration. The methods shown in FIGS. 3 to 5 include a step of temporarily fixing the semiconductor member 45 to the support member 10 via the temporary fixing material layer 30 (FIG. 3) and a semiconductor member temporarily fixed to the support member 10. For the step of processing 45 (FIG. 4 (a)), the step of forming the sealing layer 50 for sealing the processed semiconductor member 45 (FIG. 4 (b)), and the temporary fixing laminate 1. A step of irradiating the incoherent light A from the support member 10 side and thereby separating the semiconductor member 45 from the support member 10 (FIG. 4B) is provided in this order. The semiconductor member 45 has a rewiring layer 41 provided on one surface side of the semiconductor substrate 40 and the semiconductor substrate 40. The semiconductor member 45 is arranged on the curable resin layer 31 so that the rewiring layer 41 is located on the curable resin layer 31 side. In the step of temporarily fixing the semiconductor member 45 to the support member 10 via the temporary fixing material layer 30, the semiconductor member is oriented so that the rewiring layer 41 is located on the curable resin layer 31 on the curable resin layer 31 side. It may include arranging 45 and curing the curable resin layer 31.

The support member 10 and the temporary fixing material layer 30 constituting the temporary fixing laminate 1 have a specific transmittance for incoherent irradiation to the temporary fixing laminate 1. The transmittance of the support member 10 with respect to incoherent light is 90% or more. The transmittance of the temporary fixing material layer 30 with respect to incoherent light is 3.1% or less. Due to the high transmittance of the support member 10 and the low transmittance of the temporary fixing material layer 30, the semiconductor member 45 can be easily separated from the support member 10 even when irradiated with incoherent light having a low energy amount. be able to. When the amount of energy of the incoherent light is low, the rewiring layer 41 of the semiconductor member 45 or other peripheral members are less likely to be damaged by light irradiation. From the same viewpoint, the transmittance of the support member 10 with respect to incoherent light may be 60% or more, 70% or more, or 100% or less. The transmittance of the temporary fixing material layer 30 with respect to incoherent light may be 3.0% or less, 2.5% or less, 1.5% or less, or 0% or more.

The support member 10 is a plate-like body having a high transmittance and capable of withstanding a load received during processing of the semiconductor member 45. Examples of the support member 10 include an inorganic glass substrate and a transparent resin substrate.

The thickness of the support member 10 may be, for example, 0.1 to 2.0 mm. When the thickness of the support member 10 is 0.1 mm or more, handling tends to be easy. When the thickness of the support member 10 is 2.0 mm or less, the material cost tends to be suppressed.

The outermost surface S of the temporary fixing material layer 30 on the side where the semiconductor member 45 is temporarily fixed is the surface of the curable resin layer 31. For example, the semiconductor member 45 can be temporarily fixed to the support member 10 by curing the curable resin layer 31 with the semiconductor member 45 mounted on the curable resin layer 31. In other words, the semiconductor member 45 can be temporarily adhered to the support member 10 via the temporary fixing material layer 30 having the cured curable resin layer 31c.

The light absorption layer 32 is a layer that absorbs light and generates heat. By providing the light absorption layer 32, the temporary fixing material layer 30 can easily have a low transmittance.

The curable resin layer 31 is a layer containing a curable resin composition that is cured by heat or light. The curable resin layer 31 before curing has an adhesiveness to the extent that the semiconductor member 45 can be attached by crimping or the like. The cured curable resin layer 31c holds the semiconductor member 45 while the semiconductor member 45 is processed. In the present specification, all the components other than the conductive particles constituting the curable resin layer 31 are regarded as the components of the curable resin composition.

From the viewpoint of stress relaxation, the thickness of the curable resin layer 31 may be, for example, 50 μm or less, 40 μm or less, or 30 μm or less and 0.1 μm or more, and 50 μm or less, 40 μm or less, or 30 μm or less and 1 μm or more. There may be.

The storage elastic modulus of the cured curable resin layer 31c at 25 ° C. may be 5 to 100 MPa. When the storage elastic modulus of the cured curable resin layer 31c at 25 ° C. is 5 MPa or more, the support member 10 does not bend and the semiconductor member 45 can be easily held. Further, when the semiconductor member 45 is separated from the support member, the curable resin layer 31c tends to be difficult to leave a residue on the semiconductor member 45. When the storage elastic modulus of the cured curable resin layer 31c at 25 ° C. is 100 MPa or less, the displacement of the semiconductor member 45 tends to be small. From the same viewpoint, the storage elastic modulus of the cured curable resin layer 31c at 25 ° C. may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 100 MPa or less, 5.5 MPa or more, 6 MPa or more. Or, it may be 6.3 MPa or more and 90 MPa or less, 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 80 MPa or less, 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more. It may be 70 MPa or less, 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 65 MPa or less. In the present specification, the storage elastic modulus of the cured curable resin layer 31c means a value obtained by viscoelasticity measurement measured under the conditions of a heating rate of 5 ° C./min, a frequency of 1 Hz, and a tensile mode.

The storage elastic modulus of the cured curable resin layer 31c at 25 ° C. is such that, for example, a hydrocarbon resin having a high Tg that increases the content of the hydrocarbon resin described later is applied, and an insulating filler is used as a curable resin composition. It can be increased by a method such as adding to.

The storage elasticity of the cured curable resin layer 31c at 250 ° C. may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, and 0.70 MPa or more. As mentioned above, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less may be used, and 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more 1 .90 MPa or less, 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.80 MPa or less, 0.70 MPa or more, 0.80 MPa or more, It may be 0.85 MPa or more, or 0.90 MPa or more and 1.75 MPa or less.

The curable resin composition constituting the curable resin layer 31 may contain a thermosetting resin and a hydrocarbon resin. A hydrocarbon resin is a resin whose main skeleton is composed of hydrocarbons. When the curable resin composition contains a hydrocarbon resin, the semiconductor member 45 can be easily attached to the curable resin layer 31 at a low temperature.

From the viewpoint of low-temperature stickability of the curable resin layer 31, the glass transition temperature (Tg) of the hydrocarbon resin may be 50 ° C. or lower. From the viewpoint of good peelability of the curable resin layer 31, the Tg of the hydrocarbon resin may be −100 ° C. or higher, or −50 ° C. or higher.

The Tg of the hydrocarbon resin is the midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the hydrocarbon resin is an intermediate point glass calculated by a method based on JIS K 7121 by measuring the change in calorific value under the conditions of a temperature rising rate of 10 ° C./min and a measurement temperature of -80 to 80 ° C. The transition temperature.

The hydrocarbon resin is, for example, an ethylene / propylene copolymer, an ethylene / 1-butene copolymer, an ethylene / propylene / 1-butene copolymer elastomer, an ethylene / 1-hexene copolymer, and an ethylene / 1-octene compound. Polymers, ethylene / styrene copolymers, ethylene / norbornene copolymers, propylene / 1-butene copolymers, ethylene / propylene / unconjugated diene copolymers, ethylene / 1-butene / unconjugated diene copolymers, Ethylene / propylene / 1-butene / non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene / butadiene / styrene block copolymer (SBS), styrene / isoprene / styrene block copolymer (SIS), styrene / ethylene / It contains at least one selected from the group consisting of butylene / styrene block copolymers (SEBS), styrene / ethylene / propylene / styrene block copolymers (SEPS), and hydrogenated products thereof. These hydrocarbon resins may have a carboxyl group. The carboxyl group is introduced by, for example, modification with maleic anhydride or the like. The hydrocarbon resin may contain a styrene resin containing a monomer unit derived from styrene. The styrene resin may be a styrene / ethylene / butylene / styrene block copolymer (SEBS).

The weight average molecular weight (Mw) of the hydrocarbon resin may be 10,000 to 5 million or 100,000 to 2 million. When the weight average molecular weight is 10,000 or more, it tends to be easy to secure the heat resistance of the temporary fixing material layer 30. When the weight average molecular weight is 5 million or less, it tends to be easy to suppress a decrease in the flow and a decrease in the stickability of the temporary fixing material layer 30. The weight average molecular weight here is a polystyrene-equivalent value using a calibration curve using standard polystyrene by gel permeation chromatography (GPC).

The content of the hydrocarbon resin is 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 90 parts by mass or less with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. It may be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 85 parts by mass or less, and 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 80 parts by mass or less. It may be. When the content of the hydrocarbon resin is within these numerical values, the thin and flat curable resin layer 31 tends to be easily formed. Further, the curable resin layer 31 tends to have good adhesiveness at a low temperature and an appropriate storage elastic modulus after curing.

The thermosetting resin is a component that cures the curable resin composition by a thermosetting reaction. The thermosetting reaction can be a reaction between a thermosetting resin and a curing agent, self-polymerization of a thermosetting resin, or a combination thereof. Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin. These may be used individually by 1 type or in combination of 2 or more type. The thermosetting resin may contain an epoxy resin because it is excellent in heat resistance, workability, and reliability.

Epoxy resin is a compound having one or more epoxy groups. The epoxy resin may have two or more epoxy groups. Examples of epoxy resins having two or more epoxy groups include bisphenol A type epoxy resin, novolac type epoxy resin (phenol novolac type epoxy resin, etc.), glycidylamine type epoxy resin, heterocycle-containing epoxy resin, and alicyclic epoxy. Resin is mentioned.

The curable resin composition may contain a thermosetting resin and a curing agent thereof. The total content of the thermosetting resin and its curing agent is 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 60 parts by mass or less with respect to 100 parts by mass of the total mass of the curable resin composition. It may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 50 parts by mass or less, and 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 40 parts by mass or less. It may be there. When the total content of the thermosetting resin and its curing agent is within these ranges, the thin and flat curable resin layer tends to be easily formed, and the heat resistance of the cured curable resin layer 31c is more excellent. Tend.

When an epoxy resin is used as the thermosetting resin, the curable resin composition may contain a curing agent for the epoxy resin. The curing agent for the epoxy resin is not particularly limited, and examples thereof include amine, polyamide, acid anhydride, polysulfide, boron trifluoride, bisphenol (bisphenol A, bisphenol F, bisphenol S, etc.), and phenol resin (phenol). Novolak resin, bisphenol A novolak resin, cresol novolak resin, phenol aralkyl resin, etc.) can be mentioned.

The thermosetting resin composition may further contain a curing accelerator that accelerates the curing reaction of the thermosetting resin such as an epoxy resin. Examples of curing accelerators include imidazole compounds, dicyandiamide, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo [5, 4,0] Undecene-7-tetraphenylborate can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.

The content of the curing accelerator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin and the curing agent. When the content of the curing accelerator is within this range, the curability of the curable resin layer and the heat resistance after curing tend to be more excellent.

The curable resin composition constituting the curable resin layer 31 may contain a polymerizable monomer having a polymerizable unsaturated group and a polymerization initiator. In this case as well, the curable resin composition may further contain the above-mentioned hydrocarbon resin.

The polymerizable monomer is a compound having a polymerizable unsaturated group such as an ethylenically unsaturated group. The polymerizable monomer may be monofunctional, bifunctional, or trifunctional or higher, but a bifunctional or higher polymerizable monomer may be used from the viewpoint of obtaining sufficient curability. Examples of polymerizable monomers include (meth) acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinylamide, and vinyl arylated. The polymerizable monomer may be (meth) acrylate or (meth) acrylic acid. The (meth) acrylate may be a monofunctional (meth) acrylate, a bifunctional (meth) acrylate, a trifunctional or higher polyfunctional (meth) acrylate, or a combination thereof.

Examples of monofunctional (meth) acrylates include methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, butoxyethyl (meth) acrylate, Isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octylheptyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate 2-hydroxyethyl (meth) ) Acrylate, 2-hydroxypropyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, ethoxypolyethylene glycol (meth) acrylate, Aliphatic (meth) acrylates such as methoxypolypropylene glycol (meth) acrylate, ethoxypolypropylene glycol (meth) acrylate, and mono (2- (meth) acryloyloxyethyl) succinate; and benzyl (meth) acrylate, phenyl (meth). ) Acrylate, o-biphenyl (meth) acrylate, 1-naphthyl (meth) acrylate, 2-naphthyl (meth) acrylate, phenoxyethyl (meth) acrylate, p-cumylphenoxyethyl (meth) acrylate, o-phenylphenoxyethyl (Meta) acrylate, 1-naphthoxyethyl (meth) acrylate, 2-naphthoxyethyl (meth) acrylate, phenoxypolyethylene glycol (meth) acrylate, nonylphenoxypolyethylene glycol (meth) acrylate, phenoxypolypropylene glycol (meth) acrylate, 2-hydroxy- 3-Phenoxypropyl (meth) acrylate, 2-hydroxy-3- (o-phenylphenoxy) propyl (meth) acrylate, 2-hydroxy-3- (1-naphthoxy) propyl (meth) acrylate, and 2-hydroxy-3 Aromatic (meth) acrylates such as − (2-naphthoxy) propyl (meth) acrylate can be mentioned.

Examples of bifunctional (meth) acrylates include ethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, and polyethylene glycol di (meth). Acrylate, propylene glycol di (meth) acrylate, dipropylene glycol di (meth) acrylate, tripropylene glycol di (meth) acrylate, tetrapropylene glycol di (meth) acrylate, polypropylene glycol di (meth) acrylate, ethoxylated polypropylene glycol di (Meta) acrylate, 1,3-butanediol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, neopentyl glycol di (meth) acrylate, 3-methyl-1,5-pentanediol di ( Meta) acrylate, 1,6-hexanediol di (meth) acrylate, 2-butyl-2-ethyl-1,3-propanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, 1, Aliphatics such as 10-decanediol di (meth) acrylate, glycerindi (meth) acrylate, tricyclodecanedimethanol (meth) acrylate, and 2-methyl-1,3-propanediol di (meth) acrylate ethoxylated. Meta) acrylate; and ethoxylated bisphenol A di (meth) acrylate, propoxylated bisphenol A di (meth) acrylate, ethoxylated propoxylated bisphenol A di (meth) acrylate, ethoxylated bisphenol F di (meth) acrylate, propoxylation. Bisphenol F di (meth) acrylate, ethoxylated propoxylated bisphenol F di (meth) acrylate, ethoxylated fluorene di (meth) acrylate, propoxylated fluorene di (meth) acrylate, and ethoxylated propoxylated fluorene di (meth) acrylate. ) Aromatic (meth) acrylates such as acrylates can be mentioned.

Examples of trifunctional or higher functional polyfunctional (meth) acrylates include trimethyl propanetri (meth) acrylate, ethoxylated trimethylol propanthry (meth) acrylate, propoxylated trimethylol propanthry (meth) acrylate, and ethoxylated propoxylation. Trimethylol propantholtri (meth) acrylate, pentaerythritol tri (meth) acrylate, ethoxylated pentaerythritol tri (meth) acrylate, propoxylated pentaerythritol tri (meth) acrylate, ethoxylated propoxylated pentaerythritol tri (meth) acrylate, penta Elythritol tetra (meth) acrylate, ethoxylated pentaerythritol tetra (meth) acrylate, propoxylated pentaerythritol tetra (meth) acrylate, ethoxylated propoxylated pentaerythritol tetra (meth) acrylate, ditrimethylolpropane tetraacrylate, and dipentaerythritol hexa. Examples thereof include aliphatic (meth) acrylates such as (meth) acrylates; and aromatic epoxy (meth) acrylates such as phenol novolac type epoxy (meth) acrylates and cresol novolac type epoxy (meth) acrylates.

These (meth) acrylates may be used alone or in combination of two or more. These (meth) acrylates may be combined with other polymerizable monomers.

The content of the polymerizable monomer may be 10 to 60 parts by mass with respect to 100 parts by mass by mass of the curable resin composition constituting the curable resin layer 31.

The polymerization initiator is a compound that initiates the polymerization reaction of the polymerizable monomer by heating or irradiation with ultraviolet light or the like. For example, when the polymerizable monomer is a compound having an ethylenically unsaturated group, the polymerization initiator may be a thermal radical polymerization initiator, a photoradical polymerization initiator, or a combination thereof.

Examples of thermal radical polymerization initiators are diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, benzoyl peroxide; t-butylperoxypivalate, t-hexylperoxypivalate, 1, 1,3,3-Tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis (2-ethylhexanoylperoxy) hexane, t-hexylperoxy-2-ethyl Hexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-hexylperoxyisopropylmonocarbonate, t-butylperoxy-3,5,5-trimethylhexano Ate, t-butylperoxylaurilate, t-butylperoxyisopropyl monocarbonate, t-butylperoxy-2-ethylhexyl monocarbonate, t-butylperoxybenzoate, t-hexylperoxybenzoate, 2,5-dimethyl Peroxyesters such as -2,5-bis (benzoylperoxy) hexane, t-butylperoxyacetate; and 2,2'-azobisisobutyronitrile, 2,2'-azobis (2,4-) Examples thereof include azo compounds such as dimethylvaleronitrile) and 2,2'-azobis (4-methoxy-2'-dimethylvaleronitrile).

Examples of photoradical polymerization initiators are benzoinketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexylphenylketone, 2-hydroxy-2-methyl-1-phenylpropane. Α-Hydroxyketones such as -1-one, 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propane-1-one; and bis (2,4,6) Examples thereof include phosphine oxides such as -trimethylbenzoyl) phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

These thermal and photoradical polymerization initiators may be used alone or in combination of two or more.

The content of the polymerization initiator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the polymerizable monomer.

The curable resin composition constituting the curable resin layer 31 may further contain an insulating filler, a sensitizer, an antioxidant and the like as other components.

The insulating filler is added for the purpose of imparting low thermal expansion and low hygroscopicity to the curable resin composition. Examples of insulating fillers include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass and ceramics. These insulating fillers may be used alone or in combination of two or more.

The content of the insulating filler may be 5 to 20 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. When the content of the insulating filler is within this numerical range, the cured curable resin layer 31c tends to have excellent heat resistance and good peelability.

Examples of sensitizers include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthene, indanslen, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4-. Includes isopropyl-9H-thioxanthene-9-one and 1-chloro-4-propoxythioxanthone. The content of the sensitizer may be 0.01 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol, 2,2,6,6-tetramethylpiperidin-1-oxyl, 4-. Examples thereof include aminoxyl derivatives such as hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl and hindered amine derivatives such as tetramethylpiperidylmethacrylate. The content of the antioxidant may be 0.1 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

The curable resin layer 31 is formed on the light absorption layer 32 by, for example, preparing a support film and a laminated film having a curable resin layer formed on the support film in advance and attaching the laminated film to the light absorption layer 32. It is provided. The laminated film can be attached to the light absorption layer 32 at room temperature (20 ° C.) or while heating using a roll laminator, a vacuum laminator, or the like. For the support film and the laminated film having a curable resin layer, for example, a resin varnish containing a thermosetting resin or a polymerizable monomer, an organic solvent, and if necessary, other components is applied to the support film, and a coating film is applied. It can be obtained by a method including removing the organic solvent from the film. Alternatively, the curable resin layer 31 may be formed on the light absorption layer 32 by a method in which the same resin varnish is directly applied to the light absorption layer 32 and the organic solvent is removed from the coating film.

An example of the light absorption layer 32 is a conductor layer containing a conductor that absorbs light and generates heat. Examples of the conductor constituting the conductor layer as the light absorption layer 32 include metals, metal oxides, and conductive carbon materials. The metal may be a simple substance metal such as chromium, copper, titanium, silver, platinum or gold, or may be an alloy such as nickel-chromium, stainless steel or copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. These may be used individually by 1 type or in combination of 2 or more type. The conductor may be chromium, titanium, or a conductive carbon material.

The light absorption layer 32 may be a single layer or a metal layer composed of a plurality of layers. The metal layer tends to have a transmittance of 3.1% or less with respect to incoherent light. For example, the light absorption layer 32 may be a metal layer composed of a copper layer and a titanium layer. The metal layer as the light absorption layer 32 may be a layer formed by physical vapor deposition (PVD) such as vacuum deposition and sputtering, or chemical vapor deposition (CVD) such as plasma chemical vapor deposition, or electrolytic plating. Alternatively, it may be a plating layer formed by electroless plating. According to physical vapor deposition, even if the support member 10 has a large area, a metal layer as a light absorption layer 32 that covers the surface of the support member 10 can be efficiently formed.

When the light absorbing layer 32 is a single metal layer, the light absorbing layer 32 is composed of tarium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), and the like. It may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag) and gold (Au).

The light absorption layer 32 may be composed of two layers, a first layer and a second layer, and may be laminated in the order of the first layer and the second layer from the support member 10 side. In this case, for example, if the first layer has a high light absorption property and the second layer has a high coefficient of thermal expansion and a high elastic modulus, particularly good peelability can be easily obtained. From this point of view, for example, at least one metal selected from the group in which the first layer consists of tarium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W) and chromium (Cr). The second layer may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag) and gold (Au). The first layer may contain at least one metal selected from the group consisting of titanium (Ti), tungsten (W) and chromium (Cr), and the second layer may be from copper (Cu) and aluminum (Al). It may contain at least one metal selected from the group.

Another example of the light absorbing layer is a layer containing conductive particles that absorb light to generate heat and a binder resin in which the conductive particles are dispersed. The conductive particles may be particles containing the above-mentioned conductor. The binder resin may be a curable resin composition, in which case the light absorption layer constitutes a part of the curable resin layer 31. For example, the light absorption layer 31B in the temporary fixing laminate 1 of FIG. 1B can be a layer containing conductive particles and a curable resin composition. The curable resin composition constituting the light absorption layer can contain the same components as the curable resin composition constituting the curable resin layer in the portion other than the light absorption layer. The curable resin composition constituting the light absorption layer may be the same as or different from the curable resin composition constituting the curable resin layer in the portion other than the light absorption layer. The content of the conductive particles in the light absorption layer is 10 to 90 parts by mass with respect to the total amount of the components other than the conductive particles in the light absorption layer, that is, 100 parts by mass of the binder resin or the curable resin composition. It may be there. When the content of the conductive particles is large, the light absorbing layer tends to have a transmittance of 3.1% or less with respect to incoherent light. From the viewpoint of transmittance, the content of the conductive particles may be 20% by mass or more, or 30% by mass or more.

For the light absorbing layer containing the conductive particles and the binder resin, for example, a varnish containing the conductive particles, the binder resin and the organic solvent is applied on the support member or the curable resin layer, and the organic solvent is applied from the coating film. It can be formed by methods including removal. The light absorption layer 32 prepared in advance may be laminated on the support member 10 or the curable resin layer. A laminate composed of a light absorption layer and a curable resin layer may be laminated on the support member.

The thickness of the light absorption layer 32 may be 1 to 5000 nm or 100 to 3000 nm from the viewpoint of light peelability. Further, when the thickness of the light absorption layer 32 is 50 to 300 nm, the light absorption layer 32 tends to have a sufficiently low transmittance. When the light absorption layer 32 is a single layer or a metal layer composed of a plurality of layers, the thickness of the light absorption layer 32 (or the metal layer) is 75 nm or more, 90 nm or more, or 100 nm or more from the viewpoint of good peelability. It may be present, and may be 1000 nm or less. In particular, when the light absorption layer 32 is a single metal layer, the thickness of the light absorption layer 32 (or metal layer) is 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more from the viewpoint of good peelability. It may be 1000 nm or less. Even if the light absorption layer 32 is a metal layer containing a metal having a relatively low light absorption property (for example, Cu, Ni) or a metal layer containing a metal having a relatively low coefficient of thermal expansion (for example, Ti), the thickness thereof is high. If it is large, better peelability tends to be easily obtained.

The thickness of the temporary fixing material layer 30 (in the case of FIG. 1A, the total thickness of the light absorbing layer 32 and the curable resin layer 31) is 0.1 to 2000 μm or 10 to 500 μm from the viewpoint of stress relaxation. It may be there.

After preparing the temporary fixing laminate 1, the semiconductor member 45 before processing is placed on the curable resin layer 31 as shown in FIG. 3A. The semiconductor member 45 has a semiconductor substrate 40 and a rewiring layer 41. The semiconductor member 45 may further have an external connection terminal. The semiconductor substrate 40 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of FIG. 3A, a plurality of semiconductor members 45 are mounted on the curable resin layer 31, but the number of semiconductor members may be one.

The thickness of the semiconductor member 45 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm from the viewpoint of suppressing cracks during transportation, processing, etc., in addition to miniaturization and thinning of the semiconductor device. good.

The semiconductor member 45 mounted on the curable resin layer 31 is pressure-bonded to the curable resin layer 31 by using, for example, a vacuum press or a vacuum laminator. When a vacuum press is used, the crimping conditions can be an atmospheric pressure of 1 hPa or less, a crimping pressure of 1 MPa, a crimping temperature of 120 to 200 ° C., and a holding time of 100 to 300 seconds. When a vacuum laminator is used, the crimping conditions are, for example, an atmospheric pressure of 1 hPa or less, a crimping temperature of 60 to 180 ° C. or 80 to 150 ° C., a laminating pressure of 0.01 to 0.5 Mpa or 0.1 to 0.5 Mpa, and a holding time of 1. It can be up to 600 seconds or 30 to 300 seconds.

After the semiconductor member 45 is arranged on the curable resin layer 31, the curable resin layer 31 is thermally cured or photocured so that the semiconductor member 45 has a cured resin layer 31c. Temporarily fixed to the support member 10 via. The conditions for thermosetting may be, for example, 300 ° C. or lower or 100 to 200 ° C. for 1 to 180 minutes or 1 to 60 minutes.

Subsequently, as shown in FIG. 4A, a semiconductor member temporarily fixed to the support member 10 is processed. FIG. 4A shows an example of processing including thinning of the semiconductor substrate. Processing of semiconductor members is not limited to this, and includes, for example, thinning of semiconductor substrates, division (dicing) of semiconductor members, formation of through silicon vias, etching processing, plating reflow processing, sputtering processing, or a combination thereof. Can be done.

The thinning of the semiconductor substrate 40 is performed by grinding the surface of the semiconductor substrate 40 opposite to the rewiring layer 41 using a grinder or the like. The thickness of the thinned semiconductor substrate 40 may be, for example, 100 μm or less.

After processing the semiconductor member 45, as shown in FIG. 4B, a sealing layer 50 for sealing the processed semiconductor member 45 is formed. The sealing layer 50 can be formed by using a sealing material usually used for manufacturing a semiconductor element. For example, the sealing layer 50 may be formed of a thermosetting resin composition. The thermosetting resin composition used for the sealing layer 50 contains, for example, an epoxy resin such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The sealing layer 50 and the thermosetting resin composition for forming the sealing layer 50 may contain an additive such as a filler and / or a flame retardant.

The sealing layer 50 is formed by using, for example, a solid material, a liquid material, a fine-grained material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, or the like is used. For example, using these devices, sealing by heat melting under the conditions of 40 to 180 ° C. (or 60 to 150 ° C.), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes. The sealing layer 50 can be formed by coating the semiconductor member 45 with a film. The thickness of the sealing film is adjusted so that the sealing layer 50 is equal to or larger than the thickness of the processed semiconductor member 45. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

After forming the sealing layer 50, as shown in FIG. 5A, the sealing layer 50 and the curable resin layer 31c may be divided into a plurality of portions including one semiconductor member 45 each.

As shown in FIG. 5B, the temporary fixing laminate 1 is irradiated with incoherent light A from the support member 10 side, whereby the semiconductor member 45 is separated from the support member 10. By irradiation with incoherent light A, the light absorption layer 32 absorbs light and instantaneously generates heat. The generated heat can cause, for example, melting of the cured curable resin layer 31c, thermal stress generated between the support member 10 and the semiconductor member 45, and scattering of the light absorption layer 32. The semiconductor member 45 can be easily separated from the support member 10 mainly due to one or more of these phenomena. When the curable resin composition constituting the curable resin layer 31 contains a hydrocarbon resin and the storage elastic modulus of the cured curable resin layer at 25 ° C. is 5 to 100 MPa, the curable resin layer is cured with the light absorbing layer 32. Peeling at the interface with the resin layer 31 tends to occur easily. This tendency is particularly remarkable when the energy amount of the incoherent light A is in the range of 5 ^{to 25 J / cm 2.} In order to separate the semiconductor member 45 from the support member 10, a slight stress may be applied to the semiconductor member 45 in addition to the irradiation of the incoherent light A.

The incoherent light A is light that is not coherent, and is an electromagnetic wave having properties such as no interference fringes, low coherence, and low directivity. Incoherent light tends to be attenuated as the optical path length becomes longer. Laser light is generally coherent light, whereas light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be said to be light excluding laser light. Since the irradiation area of incoherent light is generally overwhelmingly larger than that of coherent light (that is, laser light), it is possible to reduce the number of irradiations. For example, a single irradiation can cause the separation of the plurality of semiconductor members 45.

The incoherent light A may contain infrared rays. The incoherent light A may be pulsed light. The light source of the incoherent light A is not particularly limited, but may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by application / discharge in an arc tube filled with xenon gas. Since the xenon lamp discharges while repeating ionization and excitation, it has a stable continuous wavelength from the ultraviolet light region to the infrared light region. Since the xenon lamp requires a shorter start time than a lamp such as a metal halide lamp, the time required for the process can be significantly shortened. Further, since it is necessary to apply a high voltage for light emission, high heat is generated instantaneously, but the xenon lamp is also advantageous in that the cooling time is short and continuous work is possible.

The irradiation conditions of the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the temporary fixing material layer), irradiation energy, etc., and these can be arbitrarily set according to the number of irradiations, etc. can. From the viewpoint of reducing damage to the semiconductor member 45, irradiation conditions may be set so that the semiconductor member 45 can be separated by a single irradiation.

A part of the curable resin layer 31c may adhere as a residue 31c'on the separated semiconductor member 45. The attached residue 31c'is removed as shown in FIG. 5 (c). The residue 31c'is removed, for example, by washing with a solvent. The solvent is not particularly limited, and examples thereof include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These may be used individually by 1 type or in combination of 2 or more type. In order to remove the residue 31c', the semiconductor member 45 may be immersed in a solvent or ultrasonically cleaned. The semiconductor member 45 may be heated at a low temperature of about 100 ° C. or lower.

By the method exemplified above, the semiconductor element 60 including the processed semiconductor member 45 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting the semiconductor element.

Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

(Examination 1)
1-1. Curable Resin Layer A hydrogenated styrene-butadiene elastomer (trade name: Dynalon 2324P, JSR Corporation) was dissolved in toluene to prepare an elastomer solution having a concentration of 40% by mass. Elastomer solution containing 80 parts by mass of hydrogenated styrene-butadiene elastomer, 20 parts by mass of 1,9-nonanediol diacrelate (trade name: FA-129AS, Hitachi Kasei Co., Ltd.), and peroxyester (commodity) Name: Perhexa 25O, Nichiyu Co., Ltd.) 1 part by mass was mixed to obtain a resin varnish.

The obtained resin varnish was applied to the release-treated surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Film Co., Ltd., thickness: 38 μm) using a precision coating machine. The coating film was dried by heating at 80 ° C. for 10 minutes to form a curable resin layer having a thickness of about 100 μm.

1-2. As the light absorption layer support member, a slide glass, a frosted glass plate, and a silicon wafer having a size of 40 × 40 mm were prepared. A titanium layer and a copper layer were formed on each support member in this order by sputtering to form a light absorption layer composed of two layers, a titanium layer (thickness: 20 nm) and a copper layer (thickness: 200 nm). In sputtering, after pretreatment by reverse sputtering, a titanium layer and a copper layer were formed by RF sputtering. The conditions for reverse sputtering (pretreatment) and RF sputtering are as follows.
Reverse sputtering (pretreatment)
-Ar flow velocity: 1.2 x 10 ^-2 Pa · m ³ / s (70 sccm)
・ RF power: 300W
・ Time: 300 seconds RF sputtering ・ Ar flow rate: 1.2 × 10 ^-2 Pa ・ m ³ / s (70 sccm)

1-3. Transmittance The transmittance of the support member and the light absorption layer with respect to the light emitted from the xenon lamp was measured. The transmittance of the light absorption layer can be regarded as substantially the transmittance of the temporary fixing material layer. The transmittance was measured using the same xenon lamp as the xenon lamp used in the peeling test described later and a spectrophotometer (USR-45, Ushio Denki Co., Ltd.). The detection terminal of the spectral emission photometer was installed at a distance of 5 cm from the light irradiation part of the xenon lamp. The light emitted from the xenon lamp was directly detected by the detection terminal, and the amount of the detected light was used as the baseline. Next, an object to be measured was placed between the detection terminal of the spectrophotometer and the xenon lamp, and the transmitted light emitted from the xenon lamp and transmitted through the object to be measured was detected by the detection terminal. The ratio of the detected transmitted light amount to the baseline was defined as the transmittance. The transmittance for the total amount of light in the wavelength range of 300 to 800 nm was calculated by the following formula.
Transmittance (%) = {(total amount of transmitted light at wavelengths of 300 to 800 nm) / (total amount of light at baseline wavelength of 300 to 800 nm)} x 100
Regarding the light absorption layer, the transmittance of the support member and the laminate having the light absorption layer was measured by the light from the xenon lamp arranged on the support member side. The amount of light incident on the light absorption layer was calculated from the transmittance of the baseline and the support member, and the ratio of the amount of transmitted light to this was defined as the transmittance of the light absorption layer.

1-4. Peeling test A curable resin layer cut out to a size of 40 mm × 40 mm was placed on the light absorption layer formed on each support member. The curable resin layer was brought into close contact with the light absorption layer by vacuum lamination to obtain a temporary fixing laminate having a laminated structure of a support member / light absorption layer / curable resin layer. A semiconductor chip (size: 10 mm × 10 mm, thickness: 150 μm) was placed on the curable resin layer of the temporary fixing laminate. The curable resin layer was cured by heating at 180 ° C. for 1 hour to obtain a test piece for a peeling test having a semiconductor chip temporarily fixed to a support member.

Each test piece was irradiated with pulsed light from the support member side of the temporary fixing laminate with a xenon lamp. The light irradiation conditions are as follows. As a xenon lamp, S2300 manufactured by Xenon was used. The wavelength range of this device is from 270 nm to the near infrared region. The irradiation distance is the distance between the xenon lamp, which is a light source, and the support member.
-Applied voltage: 3700V
-Pulse width: 200 μs
・ Irradiation distance: 50 mm
・ Number of irradiations: 1 time ・ Irradiation time: 200 μs
After light irradiation with a xenon lamp, the condition of the test piece was observed, and the peelability was evaluated according to the following criteria. The evaluation results are shown in Table 1.
A: The semiconductor chip is for temporary fixing without being damaged by spontaneously peeling off from the temporary fixing laminate only by light irradiation, or by inserting tweezers between the semiconductor chip and the curable resin layer. It peeled off from the laminate.
B: Even if tweezers were inserted between the semiconductor chip and the curable resin layer, the semiconductor chip was not peeled off from the temporary fixing laminate.

(Examination 2)
A test piece having a slide glass as a support member was produced by the same procedure as in "Examination 1" except that the thicknesses of the copper layer and the titanium layer constituting the light absorption layer were changed as shown in Table 2. In Comparative Example 3, the light absorbing layer was not provided, and the curable resin layer was laminated directly on the support member. In Comparative Example 4, only the titanium layer was formed as the light absorption layer. The peelability of the obtained test piece was evaluated by the same peeling test as in "Examination 1". The transmittance of the light absorption layer was measured by the same method as in "Examination 1". The evaluation results are shown in Table 2.

(Examination 3)
A light absorption layer composed of a single layer or two metal layers shown in Table 3 was formed by sputtering on a slide glass having a thickness of 1300 μm as a support member. In the table, the composition of the light absorption layer is shown in the order of lamination from the slide glass side. For example, "Ti (50) / Cu (200)" includes a titanium layer having a thickness of 50 nm and a copper layer having a thickness of 200 nm. It means that they were laminated in this order from the slide glass side. Examples 1, 3 and 4 are the same as Examples 1, 3 and 4 of Study 2. On the light absorption layer, a temporary fixing laminate having a laminated structure of a support member / a light absorption layer / a curable resin layer was produced by the same procedure as in “Examination 1”. Further, a test body for a peeling test having a semiconductor chip temporarily fixed to the support member was prepared by the same procedure as in "Examination 1". The transmittance of the light absorption layer was measured by the same method as in "Examination 1".

Each of the prepared test pieces was irradiated with pulsed light from the support member side of the temporary fixing laminate with a xenon lamp. The light irradiation conditions are as follows. As an irradiation device having a xenon lamp, a PulseForge 1300 manufactured by Novacentrix was used. The irradiation distance is the distance between the xenon lamp, which is a light source, and the support member. The pulse width was sequentially increased from 150 μs to 10 μs, and the minimum value of the pulse width at which the semiconductor chip spontaneously peeled from the temporary fixing laminate only by light irradiation was recorded. The irradiation of the pulsed light was performed while exchanging the test specimens, and the number of irradiations to the individual test specimens was one. Table 3 shows the minimum value of the pulse width at which the semiconductor chip peels off.
-Applied voltage: 800V
-Pulse width: 150 to 700 μs
・ Irradiation distance: 6 mm
-Number of irradiations: 1 time Based on the minimum value of the pulse width at which the semiconductor chip peels off, the peelability was evaluated according to the following criteria.
AAA: 150 μs
AA: 160 μs or more and less than 350 A: 350 μs or more and 700 μs or less, or peeling due to dissolution of the light absorption layer (A (Melt))
B: Cannot be peeled off at 700 μs or less

From the results of Examinations 1, 2 and 3, the semiconductor member is temporarily fixed by using a temporary fixing laminate containing a combination of a support member having a transmittance of 90% or more and a light absorbing layer having a transmittance of 3.1% or less. After that, it was confirmed that the semiconductor member could be easily separated from the support member by irradiating the xenon lamp with incoherent light.

1 ... Temporary fixing laminate, 10 ... Support member, 30 ... Temporary fixing material layer, 31 ... Curable resin layer, 31c ... Hardened curable resin layer, 32 ... Light absorption layer, 40 ... Semiconductor substrate, 41 ... Re Wiring layer, 45 ... semiconductor member, 50 ... sealing layer, 60 ... semiconductor element, S ... outermost surface of temporary fixing material layer.

Claims (8)

A temporary fixing laminate including a support member and a temporary fixing material layer provided on the supporting member, wherein the temporary fixing material layer is a curable resin containing at least one outermost surface of the temporary fixing material layer. The process of preparing a temporary fixing laminate having a layer,
The semiconductor member having the semiconductor substrate and the rewiring layer provided on one surface side of the semiconductor substrate is oriented so that the rewiring layer is located on the curable resin layer side, via the temporary fixing material layer. The process of temporarily fixing to the support member and
A process of processing the semiconductor member temporarily fixed to the support member, and
A step of irradiating the temporary fixing laminate with incoherent light from the support member side and thereby separating the semiconductor member from the support member.
In this order,
A part or all of the temporary fixing material layer is a light absorbing layer that absorbs light and generates heat.
The transmittance of the support member with respect to the incoherent light is 90% or more, and the transmittance is 90% or more.
The transmittance of the temporary fixing material layer with respect to the incoherent light is 3.1% or less.
A method of manufacturing a semiconductor device. The method of claim 1, wherein the incoherent light comprises infrared light. The method according to claim 1 or 2, wherein the light source of the incoherent light is a xenon lamp. The method according to any one of claims 1 to 3, wherein the temporary fixing material layer has a metal layer provided as a layer different from the curable resin layer as the light absorption layer. The method according to claim 4, wherein the metal layer has a transmittance of 3.1% or less with respect to the incoherent light. It has a support member and a light absorption layer provided on the support member.
The transmittance of the support member with respect to the incoherent light emitted from the xenon lamp is 90% or more.
The light absorbing layer is a metal layer, and the transmittance of the metal layer with respect to the incoherent light emitted from the xenon lamp is 3.1% or less.
Light absorption laminate. The light absorption laminate according to claim 6, wherein the light absorption layer has a thickness of 75 nm or more. The light absorbing laminate according to claim 6 or 7, and a curable resin layer are provided.
The metal layer of the light-absorbing laminate and the curable resin layer are laminated in this order from the support member side of the light-absorbing laminate, whereby the metal layer and the temporary fixing material layer having the curable resin layer are formed. Is formed,
Laminated body for temporary fixing.

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