TW202036663A - Semiconductor device manufacturing method, light-absorbing layered body, and temporary-fixing-use layered body - Google Patents

Abstract

Disclosed is a semiconductor device manufacturing method comprising, in this order: a step for processing a semiconductor member that has been temporarily fixed to a support member via a temporary fixing material layer; and a step for separating the semiconductor member from the support member by irradiating a temporary-fixing-use layered body with incoherent light from the support member side. All or part of the temporary fixing material layer is a light-absorbing layer which absorbs light and generates heat. The transmittance of the support member with respect to the incoherent light is 90% or greater. The transmittance of the temporary fixing material layer with respect to the incoherent light is 3.1% or less.

Description

Method for manufacturing semiconductor device, light-absorbing laminate, and laminate for temporary fixation

The present invention relates to a method of manufacturing a semiconductor device, a light-absorbing laminate, and a laminate for temporary fixation.

In the manufacture of semiconductor elements, the semiconductor component may be processed after the integrated circuit is incorporated into a semiconductor component such as a semiconductor wafer. For the semiconductor member, for example, processing such as grinding or cutting of the back surface is performed. The semiconductor member is usually processed in a state of being temporarily fixed to the supporting member, and thereafter the semiconductor member is separated from the supporting member. For example, in Patent Document 1, as a method of separating a semiconductor member from a supporting member, a method is disclosed in which the semiconductor member is temporarily fixed to the supporting member via a temporary fixing material layer, and the semiconductor member is heated while being processed after processing. The support members are physically separated. Patent Document 2 and Patent Document 3 disclose a method of separating a semiconductor member from a supporting member by irradiating a laser on a temporary fixing material layer. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2012-126803 [Patent Document 2] Japanese Patent Laid-Open No. 2016-138182 [Patent Document 3] Japanese Patent Laid-Open No. 2013-033814

[The problem to be solved by the invention] The present invention is directed to a method of manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a support member, and provides a method for easily separating the processed semiconductor member from the support member by simple processing. [Means to solve the problem]

A method of manufacturing a semiconductor device according to an aspect of the present invention sequentially includes: The step of preparing a laminated body for temporary fixation, the laminated body for temporary fixation includes a support member and a temporary fixation material layer provided on the support member, wherein the temporary fixation material layer has at least one that includes the temporary fixation material layer One of the most surface hardening resin layers; A semiconductor member having a semiconductor substrate and a rewiring layer provided on one side of the semiconductor substrate is temporarily fixed to the rewiring layer in the direction in which the rewiring layer is located on the side of the curable resin layer via the temporary fixing material layer. The steps of the supporting member; A step of processing the semiconductor member temporarily fixed to the support member; and The step of irradiating the laminated body for temporary fixation with incoherent light from the supporting member side, thereby separating the semiconductor member from the supporting member, and The temporary fixing material layer has a light absorption layer that absorbs light and generates heat. The light absorption layer is provided as a part of the curable resin layer or a layer different from the curable resin layer. The transmittance of the support member with respect to the incoherent light is 90% or more. The transmittance of the temporary fixing material layer with respect to the incoherent light is 3.1% or less.

According to the method, the processed semiconductor member can be easily separated from the supporting member by a simple process of irradiation of incoherent light. Compared with the irradiation of laser light which is coherent light, the irradiation of incoherent light can easily ensure a large irradiation area, so it can be easily performed. Since the laminated body for temporary fixation includes a combination of a support member having a specific transmittance and a light absorption layer, even if it is irradiated with incoherent light, the semiconductor member can be easily separated from the support member. [Effects of the invention]

According to the present invention, for a method of manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a supporting member, a method for easily separating the processed semiconductor member from the supporting member by simple processing is provided. The method of the present invention can easily separate the processed semiconductor member from the supporting member even if it is incoherent light with low energy. By using incoherent light with low energy, it is possible to suppress damage to fine structures such as rewiring layers of semiconductor components.

Hereinafter, several embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.

The size of the constituent elements in each figure referred to in this specification is a conceptual size, and the relative size of the constituent elements is not limited to that shown in each figure. Sometimes repeated explanations are omitted.

The numerical values and ranges in this specification do not limit the scope of the present invention. In this specification, the numerical range indicated by "～" means a range that includes the numerical values described before and after "～" as the minimum and maximum values, respectively. In the numerical ranges described stepwise in this specification, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in another step. In the numerical range described in this specification, the upper limit or lower limit of the numerical range may be replaced with the value shown in the examples.

In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid. The same applies to other similar expressions such as (meth)acrylate and (meth)acryloyl.

In order to manufacture a semiconductor device, a laminated body for temporary fixation is prepared for temporarily fixing the semiconductor member to the support member while the semiconductor member is being processed. Fig. 1 (a), Fig. 1 (b) and Fig. 1 (c) are sectional views showing some embodiments of the laminated body for temporary fixation. The laminated body 1 for temporary fixation shown in FIG. 1 (a), FIG. 1 (b), and FIG. 1 (c) has the support member 10 and the temporary fixation material layer 30 provided on the support member 10. As shown in FIG. The temporary fixing material layer 30 has a curable resin layer 31. The curable resin layer 31 includes the outermost surface S of the temporary fixing material layer 30 on the opposite side to the support member 10. In addition, the temporary fixing material layer 30 has a light absorption layer 32 provided as a layer different from the curable resin layer 31 or a light absorption layer 31B provided as a part of the curable resin layer 31. The light absorption layer 32 and the light absorption layer 31B are layers that absorb light and generate heat.

The temporary fixing material layer 30 of the laminated body 1 for temporary fixing shown in Fig. 1(a) has: a curable resin layer 31 including the outermost surface S on the side opposite to the support member 10; and a light absorption layer 32 as a curable resin layer The resin layer 31 is provided in different layers. In other words, on the support member 10, the light absorption layer 32 and the curable resin layer 31 are laminated in this order.

The temporary fixing material layer 30 of the laminated body 1 for temporary fixing shown in FIG. 1(b) includes the curable resin layer 31 including the light absorption layer 31B as a part thereof. The curable resin layer 31 here has a light absorption layer 31B including the outermost surface S, and a substantially non-exothermic curable resin layer 31A provided on the support member 10 side of the light absorption layer 31B.

In the case of the temporary fixing material layer 30 of the laminated body 1 for temporary fixing shown in FIG. 1(c), not only the light absorbing layer 31B similar to that of FIG. 1(b) is provided, but also a curable resin The layer 31 is a different layer of the light absorbing layer 32. Further, a light absorption layer constituting a part of the curable resin layer 31 may be provided between the curable resin layer 31A and the support member 10 instead of the light absorption layer 32 provided as a layer different from the curable resin layer 31.

The laminated body 1 for temporary fixation can be obtained by sequentially forming each layer on the support member 10, for example. It is also possible to prepare a laminate film having a curable resin layer and a light absorption layer and laminate these on the support member 10. It is also possible to prepare the light-absorbing laminated body illustrated in FIG. 2 and use it to obtain the laminated body 1 for temporary fixation. The light-absorbing laminate 3 shown in FIG. 2 has a supporting member 10 and a light-absorbing layer 32 provided on the supporting member 10. The light absorption layer 32 may also be a metal layer adjacent to the support member 10. The transmittance of the metal layer as the light absorption layer 32 with respect to incoherent light irradiated from the xenon lamp may be 3.1% or less, 3.0% or less, 2.5% or less, or 1.5% or less, and may be 0% or more. The laminated body 1 for temporary fixation of FIG.1(a), FIG.1(b), and FIG.1(c) can also be regarded as a laminated body containing a light absorption laminated body and a curable resin layer. For example, the method including the step of forming the curable resin layer 31 on the light absorbing layer 32 of the light absorbing layered body 3 can be used to manufacture the temporary fixing of Figures 1(a), 1(b) and 1(c) Layered body 1.

Figure 3 (a) and Figure 3 (b), Figure 4 (a) and Figure 4 (b), and Figure 5 (a), Figure 5 (b) and Figure 5 (c) show the use of temporary fixation laminated body A step diagram of an embodiment of a method of manufacturing a semiconductor device. Here, the method of using the laminated body 1 for temporary fixation of FIG. 1(a) is illustrated, but the laminated body for temporary fixation of another structure can also be used for manufacturing a semiconductor device similarly. The methods shown in FIGS. 3(a) and 3(b) to 5(a), 5(b) and 5(c) sequentially include: temporarily fixing the semiconductor member 45 to the temporary fixing material layer 30 The step of supporting member 10 (FIG. 3(a) and FIG. 3(b)); the step of processing semiconductor member 45 temporarily fixed to support member 10 (FIG. 4(a)); forming the processed semiconductor member 45 The step of sealing the sealing layer 50 (FIG. 4(b)); and the step of separating the semiconductor member 45 from the supporting member 10 by irradiating incoherent light A to the temporarily fixing laminate 1 from the supporting member 10 side (FIG. 4(b)). The semiconductor member 45 has a semiconductor substrate 40 and a rewiring layer 41 provided on one surface side of the semiconductor substrate 40. The semiconductor member 45 is arranged on the curable resin layer 31 in a direction in which the rewiring layer 41 is located on the curable resin layer 31 side. The step of temporarily fixing the semiconductor member 45 to the support member 10 via the temporary fixing material layer 30 may include: arranging the semiconductor member 45 on the curable resin layer 31 in a direction in which the rewiring layer 41 is located on the curable resin layer 31 side; and The curable resin layer 31 is cured.

The support member 10 and the temporary fixing material layer 30 which constitute the laminated body 1 for temporary fixation have specific transmittance with respect to the incoherent light irradiated to the laminated body 1 for temporary fixation. The transmittance of the support member 10 with respect to incoherent light is 90% or more. The transmittance of the temporary fixing material layer 30 to incoherent light is 3.1% or less. Since the transmittance of the support member 10 is high and the transmittance of the temporary fixing material layer 30 is low, the semiconductor member 45 can be easily separated from the support member 10 even if low-energy incoherent light is irradiated. If the energy of the incoherent light is low, the rewiring layer 41 of the semiconductor member 45 or other peripheral members are less likely to be damaged by light irradiation. From the same viewpoint, the transmittance of the support member 10 with respect to incoherent light may be 60% or more, or 70% or more, and may be 100% or less. The transmittance of the temporary fixing material layer 30 with respect to incoherent light may be 3.0% or less, 2.5% or less, or 1.5% or less, and may be 0% or more.

The support member 10 is a plate-shaped body that has a high transmittance and can withstand the load received when the semiconductor member 45 is processed. As an example of the support member 10, an inorganic glass substrate and a transparent resin substrate can be mentioned.

The thickness of the supporting member 10 may be 0.1 mm to 2.0 mm, for example. If the thickness of the support member 10 is 0.1 mm or more, the handling tends to be easier. If the thickness of the support member 10 is 2.0 mm or less, the material cost tends to be suppressed.

The outermost surface S of the temporary fixing material layer 30 on the side where the semiconductor member 45 is temporarily fixed is the surface of the curable resin layer 31. For example, by curing the curable resin layer 31 in a state where the semiconductor member 45 is placed on the curable resin layer 31, the semiconductor member 45 can be temporarily fixed to the support member 10. In other words, the semiconductor member 45 can be temporarily attached to the support member 10 via the temporary fixing material layer 30 having the hardened curable resin layer 31c.

The light absorption layer 32 is a layer that absorbs light and generates heat. By providing the light absorbing layer 32, the temporary fixing material layer 30 can easily have a low transmittance.

The curable resin layer 31 is a layer containing a curable resin composition that is cured by heat or light. The curable resin layer 31 before curing has adhesiveness to the extent that the semiconductor member 45 can be attached by pressure bonding or the like. The hardened curable resin layer 31c holds the semiconductor member 45 while the semiconductor member 45 is being processed. In this specification, all components other than the conductive particles constituting the curable resin layer 31 are regarded as components of the curable resin composition.

From the viewpoint of stress relaxation, the thickness of the curable resin layer 31 may be 50 μm or less, 40 μm or less, or 30 μm or less and 0.1 μm or more, or may be 50 μm or less, 40 μm or less, or 30 μm or less. And 1 μm or more.

The storage elastic coefficient of the hardened curable resin layer 31c at 25°C may be 5 MPa to 100 MPa. If the storage elastic coefficient of the cured curable resin layer 31c at 25° C. is 5 MPa or more, it is easy to hold the semiconductor member 45 without bending the support member 10. In addition, when the semiconductor member 45 is separated from the supporting member, there is a tendency that the curable resin layer 31c does not easily leave residue on the semiconductor member 45. If the storage elastic coefficient of the cured curable resin layer 31c at 25° C. is 100 MPa or less, there is a tendency that the positional deviation of the semiconductor member 45 can be reduced. From the same point of view, the storage elastic coefficient of the hardened curable resin layer 31c at 25°C may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 100 MPa or less, or 5.5 MPa or more, 6 MPa or less. MPa or more, or 6.3 MPa or more and 90 MPa or less, or 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 80 MPa or less, or 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 70 MPa Below, it may be 5.5 MPa or more, 6 MPa or more, or 6.3 MPa or more and 65 MPa or less. In this specification, the storage elasticity coefficient of the cured curable resin layer 31c refers to a value obtained by a viscoelasticity measurement performed under the conditions of a heating rate of 5°C/min, a frequency of 1 Hz, and a stretching mode.

The storage elasticity coefficient of the cured curable resin layer 31c at 25° C. can be improved by, for example, increasing the content of the hydrocarbon resin described later, applying a hydrocarbon resin with a high Tg, or adding an insulating filler to the curable resin composition. increase.

The storage elastic coefficient of the cured curable resin layer 31c at 250°C may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 2.00 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.90 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more and 1.80 MPa or less, or 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa Above, or above 0.90 MPa and below 1.75 MPa.

The curable resin composition constituting the curable resin layer 31 may contain thermosetting resin and hydrocarbon resin. Hydrocarbon resin is a resin containing hydrocarbons as a main skeleton. If the curable resin composition contains a hydrocarbon resin, the semiconductor member 45 can be easily attached to the curable resin layer 31 at low temperatures.

From the viewpoint of the low-temperature adhesiveness of the curable resin layer 31, the glass transition temperature (Tg) of the hydrocarbon resin may be 50° C. or less. From the viewpoint of good peelability of the curable resin layer 31, the Tg of the hydrocarbon resin may be -100°C or higher, or -50°C or higher.

The Tg of the hydrocarbon resin is the midpoint glass transition temperature value obtained by differential scanning calorimetry (Differential Scanning Calorimetry, DSC). Specifically, the Tg of a hydrocarbon resin is measured at a heating rate of 10°C/min and a measurement temperature of -80°C to 80°C, by a method based on Japanese Industrial Standards (JIS) K 7121 And the calculated intermediate point glass transition temperature.

The hydrocarbon resin includes, for example, selected from ethylene-propylene copolymer, ethylene-1-butene copolymer, ethylene-propylene-1-butene copolymer, ethylene-1-hexene copolymer, ethylene-1-octene copolymer, Ethylene-styrene copolymer, ethylene-norbornene copolymer, propylene-1-butene copolymer, ethylene-propylene-non-conjugated diene copolymer, ethylene-1-butene-non-conjugated diene copolymer , Ethylene-propylene-1-butene-non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymer (styrene-butadiene-styrene block copolymer , SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (styrene-ethylene-butylene -styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), and at least one of the group consisting of these hydrides . These hydrocarbon resins may have carboxyl groups. The carboxyl group is introduced by modification using maleic anhydride or the like, for example. The hydrocarbon resin may also include a styrene-based resin containing monomer units derived from styrene. The styrene resin may also be a styrene-ethylene-butylene-styrene block copolymer (SEBS).

The weight average molecular weight (Mw) of the hydrocarbon resin can be 10,000 to 5 million or 100,000 to 2 million. If the weight average molecular weight is 10,000 or more, the heat resistance of the temporary fixing material layer 30 tends to be easily ensured. If the weight average molecular weight is 5 million or less, it tends to easily suppress the decrease in flow and adhesion of the temporary fixing material layer 30. The weight average molecular weight here is a polystyrene conversion value obtained by using a gel permeation chromatography (Gel Permeation Chromatography, GPC) and a calibration curve using a standard polystyrene.

With respect to 100 parts by mass of the curable resin composition constituting the curable resin layer 31, the content of the hydrocarbon resin may be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 90 parts by mass or less. 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 85 parts by mass or less, or 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more and 80 parts by mass or less. If the content of the hydrocarbon resin is within these numerical ranges, the thin and flat curable resin layer 31 tends to be easily formed. In addition, the curable resin layer 31 tends to have good adhesion at low temperatures and an appropriate storage elastic coefficient after curing.

The thermosetting resin is a component that hardens the curable resin composition by a thermosetting reaction. The thermosetting reaction may be the reaction of the thermosetting resin and the hardener, the self-polymerization of the thermosetting resin, or a combination of these. Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenol resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. These can be used alone or in combination of two or more. The thermosetting resin may contain an epoxy resin from the point of being more excellent in heat resistance, workability, and reliability.

The epoxy resin is a compound having one or more epoxy groups. The epoxy resin may have two or more epoxy groups. Examples of epoxy resins having two or more epoxy groups include: bisphenol A epoxy resins, novolac epoxy resins (phenol novolac epoxy resins, etc.), glycidylamine epoxy resins Resins, heterocyclic epoxy resins, and alicyclic epoxy resins.

The curable resin composition may contain a thermosetting resin and its curing agent. With respect to 100 parts by mass of the total mass of the curable resin composition, the total content of the thermosetting resin and its curing agent may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 60 parts by mass or less, or 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 50 parts by mass or less, and may also be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 40 parts by mass or less. If the total content of the thermosetting resin and its curing agent is within these ranges, there is a tendency that a thin and flat curable resin layer can be easily formed, and the cured curable resin layer 31c tends to have more excellent heat resistance. .

When an epoxy resin is used as the thermosetting resin, the curable resin composition may contain a curing agent for the epoxy resin. The hardener of epoxy resin is not particularly limited. Examples thereof include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, and bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.) , And phenol resins (phenol novolak resin, bisphenol A novolak resin, cresol novolak resin, phenol aralkyl resin, etc.).

The thermosetting resin composition may further include a curing accelerator that promotes the curing reaction of thermosetting resins such as epoxy resins. Examples of hardening accelerators include imidazole compounds, dicyandiamide, dihydrazine dicarboxylic acid, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole- Tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These can be used alone or in combination of two or more.

The content of the curing accelerator may be 0.01 parts by mass to 5 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin and the curing agent. If the content of the hardening accelerator is within the above range, the hardenability of the curable resin layer and the heat resistance after hardening tend to be more excellent.

The curable resin composition constituting the curable resin layer 31 may include a polymerizable monomer having a polymerizable unsaturated group and a polymerization initiator. In this case, the curable resin composition may further include the hydrocarbon resin.

The polymerizable monomer is a compound having a polymerizable unsaturated group such as an ethylenically unsaturated group. The polymerizable monomer may be any one of monofunctional, bifunctional, or trifunctional or higher, but from the viewpoint of obtaining sufficient curability, a polymerizable monomer having a bifunctional or higher function may be used. Examples of polymerizable monomers include (meth)acrylates, vinylidene halides, vinyl ethers, vinyl esters, vinyl pyridines, vinyl amides, and arylated vinyl groups. The polymerizable monomer may be (meth)acrylate or (meth)acrylic acid. The (meth)acrylate may also be a monofunctional (meth)acrylate, a difunctional (meth)acrylate, a trifunctional or higher multifunctional (meth)acrylate, or a combination of these.

Examples of monofunctional (meth)acrylates include: methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, (meth)acrylate Base) tertiary butyl acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, ( Heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, (meth)acrylate-2 -Hydroxypropyl ester, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxy Polyethylene glycol (meth)acrylate, methoxy polypropylene glycol (meth) acrylate, ethoxy polypropylene glycol (meth) acrylate, and succinic acid mono(2-(meth)acrylic acid Aliphatic (meth)acrylates such as methyl ethyl) ester; and benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, (meth)acrylic acid-1- Naphthyl ester, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylbenzene (meth)acrylate Oxyethyl, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, nonylbenzene Polyoxyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, (meth)acrylic acid-2-hydroxy-3-phenoxypropyl ester, (meth)acrylic acid-2 -Hydroxy-3-(o-phenylphenoxy)propyl ester, (meth)acrylic acid-2-hydroxy-3-(1-naphthyloxy)propyl ester, and (meth)acrylic acid-2-hydroxy-3 -Aromatic (meth)acrylates such as (2-naphthyloxy)propyl ester.

Examples of difunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, Tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth) Acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate Esters, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1 ,6-Hexanediol di(meth)acrylate, 2-butyl-2-ethyl-1,3-propanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylic acid Ester, 1,10-decanediol di(meth)acrylate, glycerol di(meth)acrylate, tricyclodecane dimethanol (meth)acrylate, and ethoxylated 2-methyl-1 , 3-propanediol di(meth)acrylate and other aliphatic (meth)acrylates; and ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylic acid Ester, ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate , Ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, and ethyl Aromatic (meth)acrylates such as oxylated propoxylated fluorene type di(meth)acrylates.

Examples of polyfunctional (meth)acrylates having three or more functions include: trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propane Oxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated Pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, ethoxylate Alkylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, di-trimethylolpropane tetraacrylate Aliphatic (meth)acrylate such as dipentaerythritol hexa(meth)acrylate; and phenol novolac type epoxy (meth)acrylate, and cresol novolac type epoxy (meth) Aromatic epoxy (meth)acrylates such as acrylates.

These (meth)acrylates can be used individually by 1 type or in combination of 2 or more types. You may combine these (meth)acrylates with other polymerizable monomers.

The content of the polymerizable monomer may be 10 parts by mass to 60 parts by mass relative to 100 parts by mass of the curable resin composition constituting the curable resin layer 31.

The polymerization initiator is a compound that initiates the polymerization reaction of the polymerizable monomer by irradiation with heating, ultraviolet light, or the like. For example, when the polymerizable monomer is a compound having an ethylenically unsaturated group, the polymerization initiator may be a thermal radical polymerization initiator, a photo radical polymerization initiator, or a combination of these.

Examples of thermal radical polymerization initiators include diacetin peroxides such as octyl peroxide, lauryl peroxide, stearyl peroxide, and benzyl peroxide; peroxide Tertiary butyl trimethyl acetate, tertiary hexyl peroxy trimethyl acetate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl Base-2,5-bis(2-ethylhexylperoxy)hexane, tertiary hexylperoxy-2-ethylhexanoate, tertiary butylperoxy-2-ethylhexanoate , Tertiary butyl peroxy isobutyrate, tertiary hexyl peroxide isopropyl monocarbonate, tertiary butyl peroxy-3,5,5-trimethylhexanoate, tertiary butyl peroxide Laurate, tert-butylperoxy isopropyl monocarbonate, tert-butylperoxy-2-ethylhexyl monocarbonate, tert-butylperoxybenzoate, tert-hexylperoxybenzene Peroxy esters such as formate, 2,5-dimethyl-2,5-bis(benzylperoxy)hexane, tert-butylperoxyacetate; and 2,2'-coupling Azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile) And other azo compounds.

Examples of photoradical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1 -Alpha-hydroxy ketones such as ketones; and bis(2,4,6-trimethylbenzyl)phenyl phosphine oxide, bis(2,6-dimethoxybenzyl)-2,4, Phosphine oxides such as 4-trimethylpentylphosphine oxide and 2,4,6-trimethylbenzyldiphenylphosphine oxide.

These thermal radical polymerization initiators and photo radical polymerization initiators can be used alone or in combination of two or more.

The content of the polymerization initiator may be 0.01 parts by mass to 5 parts by mass relative to 100 parts by mass of the total amount of polymerizable monomers.

The curable resin composition constituting the curable resin layer 31 may further include an insulating filler, a sensitizer, an antioxidant, and the like as other components.

The insulating filler is added for the purpose of imparting low thermal expansion and low hygroscopicity to the curable resin composition. Examples of insulating fillers include non-metallic inorganic fillers such as silicon dioxide (silica), alumina (alumina), boron nitride, titanium dioxide (titania), glass (glass), and ceramic (ceramic). These insulating fillers can be used alone or in combination of two or more.

The content of the insulating filler may be 5 parts by mass to 20 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. If the content of the insulating filler is within the above numerical range, the cured curable resin layer 31c tends to have excellent heat resistance and good peelability.

Examples of sensitizers include: anthracene, phenanthrene, 1,2-benzopyrene (chrysene), benzopyrene (benzopyrene), 1,2-benzopyrene (fluoranthene), fluorene, pyrene, oxygen Xanthone, indanthrene, thioxanthone-9-one, 2-isopropyl-9H-thioxanthone-9-one, 4-isopropyl-9H-thioxanthone-9-one, and 1-chloro-4-propoxy thioxanthone. The content of the sensitizer may be 0.01 parts by mass to 10 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone; phenol derivatives such as 4-methoxyphenol and 4-tert-butylcatechol; 2,2,6,6-tetramethyl Aminooxy derivatives such as piperidine-1-oxy and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxy; and hindered such as tetramethylpiperidine methacrylate Amine derivatives. The content of the antioxidant may be 0.1 to 10 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

The curable resin layer 31 is provided on the light absorbing layer 32 by, for example, preparing a laminate film having a supporting film and a curable resin layer formed on the supporting film in advance and attaching it to the light absorbing layer 32. The attachment of the laminated film to the light absorbing layer 32 can be carried out using a roll laminator or a vacuum laminator at room temperature (20° C.) or while heating. A laminated film having a supporting film and a curable resin layer can be obtained, for example, by the following method, the method comprising: coating a resin varnish containing a thermosetting resin or polymerizable monomer, an organic solvent, and other components as necessary Distributed on the support film; and remove organic solvents from the coating film. Alternatively, the curable resin layer 31 may be formed on the light absorbing layer 32 by directly applying the same resin varnish to the light absorbing layer 32 and removing the organic solvent from the coating film.

An example of the light absorbing layer 32 is a conductive layer including a conductive body that absorbs light and generates heat. Examples of the conductor constituting the conductor layer of the light absorbing layer 32 include metals, metal oxides, and conductive carbon materials. The metal can be a single metal such as chromium, copper, titanium, silver, platinum, gold, etc., and can also be an alloy such as nickel-chromium, stainless steel, and copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. These can be used alone or in combination of two or more. The conductor may be chromium, titanium, or conductive carbon material.

The light absorbing layer 32 may be a metal layer including a single layer or multiple layers. The metal layer tends to have a transmittance of 3.1% or less with respect to incoherent light. For example, the light absorption layer 32 may be a metal layer including a copper layer and a titanium layer. The metal layer as the light absorbing layer 32 may be formed by physical vapor deposition (PVD) such as vacuum evaporation and sputtering, or chemical vapor deposition (CVD) such as plasma chemical vapor deposition. The layer may also be a plating layer formed by electrolytic plating or electroless plating. According to physical vapor deposition, even if the support member 10 has a large area, the metal layer as the light absorption layer 32 covering the surface of the support member 10 can be efficiently formed.

In the case where the light absorbing layer 32 is a single-layer metal layer, the light absorbing layer 32 may include selected from thallium (Tl), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium ( At least one metal in the group consisting of Cr), copper (Cu), aluminum (Al), silver (Ag), and gold (Au).

The light absorbing layer 32 may also include two layers of a first layer and a second layer, which are laminated in the order of the first layer and the second layer from the support member 10 side. In this case, for example, if the first layer has high light absorption and the second layer has a high coefficient of thermal expansion and a high coefficient of elasticity, it is easy to obtain particularly good peelability. From the viewpoint, for example, the first layer may include selected from the group consisting of thallium (Tl), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr) The second layer may include at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). The first layer may also include at least one metal selected from the group consisting of titanium (Ti), tungsten (W) and chromium (Cr), and the second layer may also include at least one metal selected from the group consisting of copper (Cu) and aluminum (Al) At least one metal in the group consisting of.

Another example of the light-absorbing layer is a layer containing conductive particles that absorb light and generate heat, and a binder resin in which conductive particles are dispersed. The conductive particles may be particles containing the above-mentioned conductor. The binder resin may be a curable resin composition, and in this case, the light absorption layer constitutes a part of the curable resin layer 31. For example, the light absorption layer 31B of the laminated body 1 for temporary fixation of FIG.1(b) may be a layer containing electroconductive particle and a curable resin composition. The curable resin composition constituting the light absorption layer may contain the same components as the curable resin composition constituting the curable resin layer of the portion other than the light absorption layer. The curable resin composition constituting the light absorption layer may be the same as or different from the curable resin composition constituting the part other than the light absorption layer. The content of the conductive particles in the light absorption layer may be 10 parts by mass to 90 parts by mass relative to the total amount of components other than the conductive particles in the light absorption layer, that is, 100 parts by mass of the binder resin or curable resin composition . If the content of conductive particles is large, the light-absorbing layer tends to have a transmittance of 3.1% or less with respect to incoherent light. From the viewpoint of transmittance, the content of conductive particles may be 20% by mass or more, or 30% by mass or more.

The light-absorbing layer containing conductive particles and a binder resin can be formed, for example, by a method including: applying a varnish containing conductive particles, a binder resin, and an organic solvent on a support member or a curable resin Layer; and remove organic solvent from the coating film. The light absorbing layer 32 made in advance may be laminated on the support member 10 or on the curable resin layer. It is also possible to put a build-up bulk layer including a light absorption layer and a curable resin layer on the support member.

From the viewpoint of light peelability, the thickness of the light absorption layer 32 may be 1 nm to 5000 nm or 100 nm to 3000 nm. In addition, if the thickness of the light absorption layer 32 is 50 nm to 300 nm, the light absorption layer 32 easily has a sufficiently low transmittance. In the case where the light absorbing layer 32 is a metal layer including a single layer or multiple layers, the thickness of the light absorbing layer 32 (or metal layer) may be 75 nm or more, 90 nm or more, or from the viewpoint of good peelability 100 nm or more, and may be 1000 nm or less. Especially when the light absorbing layer 32 is a single-layer metal layer, the thickness of the light absorbing layer 32 (or metal layer) can be 100 nm or more, 125 nm or more, or 150 nm from the viewpoint of good peelability. Above or above 200 nm, and may be below 1000 nm. Even if the light absorption layer 32 is a metal layer containing a metal with relatively low light absorption (for example, Cu, Ni), or a metal layer containing a metal with a relatively low coefficient of thermal expansion (for example, Ti), if its thickness is large, it may The tendency to obtain better peelability.

From the viewpoint of stress relaxation, the thickness of the temporary fixing material layer 30 (in the case of FIG. 1(a), the total thickness of the light absorbing layer 32 and the curable resin layer 31) can be 0.1 μm to 2000 μm or 10 μm to 500 μm.

After preparing the laminated body 1 for temporary fixation, the semiconductor member 45 before processing is mounted on the curable resin layer 31 as shown to FIG. 3(a). The semiconductor member 45 has a semiconductor substrate 40 and a rewiring layer 41. The semiconductor member 45 may further have external connection terminals. The semiconductor substrate 40 may be a semiconductor wafer or a semiconductor wafer obtained by dividing a semiconductor wafer. In the example of FIG. 3(a), a plurality of semiconductor members 45 are placed on the curable resin layer 31, but the number of semiconductor members may be one.

From the viewpoints of miniaturization and thinning of the semiconductor device, and suppression of cracks during transportation, processing steps, etc., the thickness of the semiconductor member 45 may be 1 μm to 1000 μm, 10 μm to 500 μm, or 20 μm to 200 μm.

The semiconductor member 45 placed on the curable resin layer 31 is crimped to the curable resin layer 31 using, for example, a vacuum press or a vacuum laminator. In the case of using a vacuum press, the crimping conditions can be air pressure 1 hPa or less, crimping pressure 1 MPa, crimping temperature 120°C to 200°C, and holding time 100 seconds to 300 seconds. In the case of using a vacuum laminator, the crimping conditions can be, for example, air pressure of 1 hPa or less, crimping temperature of 60°C to 180°C or 80°C to 150°C, and lamination pressure of 0.01 MPa to 0.5 MPa or 0.1 MPa to 0.5 MPa 、Holding time is 1 second to 600 seconds or 30 seconds to 300 seconds.

After arranging the semiconductor member 45 on the curable resin layer 31, the curable resin layer 31 is cured by heat or light, thereby temporarily fixing the semiconductor member 45 via the temporary fixing material layer 30 having the cured curable resin layer 31c于Support member 10. The conditions for thermal hardening can be, for example, 300°C or lower, or 100°C to 200°C, and 1 minute to 180 minutes, or 1 minute to 60 minutes.

Next, as shown in FIG. 4( a ), the semiconductor member temporarily fixed to the support member 10 is processed. FIG. 4(a) shows an example of processing including thinning of a semiconductor substrate. The processing of the semiconductor member is not limited to this, and may include, for example, thinning of the semiconductor substrate, division (cutting) of the semiconductor member, formation of through electrodes, etching treatment, plating reflow treatment, sputtering treatment, or a combination of these .

The thinning of the semiconductor substrate 40 can be performed by grinding the surface of the semiconductor substrate 40 on the opposite side to the rewiring layer 41 using a grinder or the like. The thickness of the thinned semiconductor substrate 40 may be, for example, 100 μm or less.

After the semiconductor member 45 is processed, the sealing layer 50 that seals the processed semiconductor member 45 is formed as shown in FIG. 4( b ). The sealing layer 50 can be formed using a sealing material generally used for manufacturing semiconductor elements. For example, the sealing layer 50 can be formed of a thermosetting resin composition. The thermosetting resin composition used for the sealing layer 50 contains epoxy resins, such as a cresol novolak epoxy resin, a phenol novolak epoxy resin, a biphenyl diepoxy resin, and a naphthol novolak epoxy resin, for example. The sealing layer 50 and the thermosetting resin composition used to form it may contain additives such as fillers and/or flame retardants.

The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine particle material, or a sealing film. In the case of using a sealing film, a compression seal molding machine, a vacuum laminating device, etc. can be used. For example, using these devices, the heat-melting method is used under the conditions of 40℃～180℃ (or 60℃～150℃), 0.1 MPa～10 MPa (or 0.5 MPa～8 MPa), and 0.5 minutes～10 minutes. The sealing film covers the semiconductor member 45, whereby the sealing layer 50 can be formed. The thickness of the sealing film is adjusted so that the sealing layer 50 becomes more than the thickness of the semiconductor member 45 after processing. The thickness of the sealing film can be 50 μm to 2000 μm, 70 μm to 1500 μm, or 100 μm to 1000 μm.

After the sealing layer 50 is formed, as shown in FIG. 5( a ), the sealing layer 50 and the curable resin layer 31 c can be divided into a plurality of parts each including one semiconductor member 45.

As shown in FIG. 5( b ), the laminated body 1 for temporary fixation is irradiated with incoherent light A from the supporting member 10 side, thereby separating the semiconductor member 45 from the supporting member 10. By irradiating the incoherent light A, the light absorption layer 32 absorbs the light and instantly generates heat. With the generated heat, for example, melting of the hardened curable resin layer 31c, thermal stress generated between the support member 10 and the semiconductor member 45, and scattering of the light absorption layer 32 can be generated. Taking one or more of these phenomena as the main reason, the semiconductor member 45 can be easily separated from the supporting member 10. If the curable resin composition constituting the curable resin layer 31 contains a hydrocarbon resin, and the storage elastic coefficient of the cured curable resin layer at 25° C. is 5 MPa to 100 MPa, it is likely to cause the light absorbing layer 32 to interact with each other. The hardened curable resin layer 31 tends to peel off at the interface. This tendency is particularly remarkable when the energy of the incoherent light A is in the range of 5 J/cm ² to 25 J/cm ² . In order to separate the semiconductor member 45 from the supporting member 10, the semiconductor member 45 may be slightly stressed while irradiating the incoherent light A.

Incoherent light A is incoherent light and is an electromagnetic wave having properties such as no interference fringes, low interferability, and low directivity. Incoherent light tends to attenuate as the optical path length is longer. Laser light is generally coherent light. In contrast, light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be called light other than laser light. The irradiation area of incoherent light is generally much wider than that of coherent light (ie, laser light), so the number of irradiations can be reduced. For example, a plurality of semiconductor components 45 can be separated by one irradiation.

The incoherent light A may include infrared rays. The incoherent light A may also be pulsed light. The light source of the incoherent light A is not particularly limited, and may be a xenon lamp. The xenon lamp is a lamp that emits light by applying and discharging using an arc tube enclosed with xenon gas. The xenon lamp repeatedly ionizes and excites while discharging, so it stably has a continuous wavelength from the ultraviolet region to the infrared region. Compared with lamps such as metal halide lamps, xenon lamps require less time to start, so the time required for the steps can be greatly reduced. In addition, high voltage needs to be applied during light emission, so high heat is generated instantaneously, but the cooling time is short and continuous operation is possible. In this respect, the xenon lamp is also advantageous.

The irradiation conditions of the xenon lamp include applied voltage, pulse width, irradiation time, irradiation distance (the distance between the light source and the temporarily fixed material layer), irradiation energy, etc., which can be arbitrarily set according to the number of irradiations. From the viewpoint of reducing damage to the semiconductor member 45, irradiation conditions that can separate the semiconductor member 45 by one irradiation can be set.

On the separated semiconductor member 45, a part of the curable resin layer 31c may adhere as a residue 31c'. As shown in Fig. 5(c), the attached residue 31c' will be removed. The residue 31c' is removed by washing with a solvent, for example. The solvent is not particularly limited, and examples thereof include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These can be used alone or in combination of two or more. In order to remove the residue 31c', the semiconductor member 45 may be immersed in a solvent, or ultrasonic cleaning may be performed. The semiconductor member 45 may also be heated at a low temperature of about 100°C or less.

By the method exemplified above, the semiconductor element 60 including the processed semiconductor member 45 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting a semiconductor element. [Example]

Hereinafter, examples are given to explain the present invention more specifically. However, the present invention is not limited to these embodiments.

(Study 1) 1-1. Curable resin layer The hydrogenated styrene-butadiene elastomer (trade name: Dynaron 2324P, JSR Co., Ltd.) was dissolved in toluene to prepare an elastomer solution with a concentration of 40% by mass. 80 parts by mass of the elastomer solution containing hydrogenated styrene-butadiene elastomer, 20 parts by mass of 1,9-nonanediol diacrylate (trade name: FA-129AS, Hitachi Chemical Co., Ltd.), and One part by mass of oxidized ester (trade name: Perhexa 25O, NOF Corporation) was mixed to obtain a resin varnish.

Using a precision coater, the obtained resin varnish was applied to a polyethylene terephthalate (PET) film (Purex A31, Teijin Dupont Film Co., Ltd., thickness : 38 μm) on the demolding surface. The coating film was dried by heating at 80°C for 10 minutes to form a curable resin layer with a thickness of about 100 μm.

1-2. The light absorbing layer is used as a supporting member, and a glass slide, a ground glass plate, and a silicon wafer with a size of 40 mm×40 mm are prepared. On each support member, a titanium layer and a copper layer are sequentially formed by sputtering, thereby forming a light absorbing layer including two layers of titanium layer (thickness: 20 nm) and copper layer (thickness: 200 nm). In sputtering, after pretreatment by reverse sputtering, a titanium layer and a copper layer are formed by radio frequency (RF) sputtering. The conditions of reverse sputtering (pretreatment) and RF sputtering are as follows. Reverse sputtering (pretreatment) ·Ar flow rate: 1.2×10 ^-2 Pa·m ³ /s (70 sccm) ·RF power: 300 W ·Time: 300 seconds RF sputtering ·Ar flow rate: 1.2×10 ^-2 Pa·m ³ /s (70 sccm)

1-3. Transmittance The transmittance of the support member and the light absorption layer with respect to the light irradiated from the xenon lamp was measured. The transmittance of the light absorbing layer can be regarded as substantially the transmittance of the temporary fixing material layer. The transmittance was measured using the same xenon lamp and spectroradiometer (USR-45, Ushio Electric Co., Ltd.) as the xenon lamp used in the peel test described later. The detection terminal of the spectroradiometer was set at a distance of 5 cm from the light irradiation part of the xenon lamp. The detection terminal directly detects the light irradiated from the xenon lamp, and the amount of the detected light is set as the baseline. Then, the object to be measured is placed between the detection terminal of the spectroradiometer and the xenon lamp, and the detection terminal detects the transmitted light irradiated from the xenon lamp and transmitted through the object to be measured. The ratio of the detected amount of transmitted light to the baseline is defined as the transmittance. The transmittance related to the total amount of light in the wavelength range of 300 nm to 800 nm is calculated by the following formula. Transmittance (%)={(total light quantity under the wavelength of transmitted light 300 nm～800 nm)/(total light quantity under the wavelength of base line 300 nm～800 nm)}×100 Regarding the light-absorbing layer, the transmittance of the laminate having the supporting member and the light-absorbing layer was measured by light from a xenon lamp arranged on the supporting member side. The light quantity of light incident on the light-absorbing layer is calculated from the base line and the transmittance of the support member, and the ratio of the light quantity of the transmitted light to the light quantity is defined as the transmittance of the light-absorbing layer.

1-4. Peel test A curable resin layer cut out to a size of 40 mm×40 mm was arranged on the light absorption layer formed on each support member. The curable resin layer is brought into close contact with the light absorption layer by vacuum lamination to obtain a laminated body for temporary fixation having a laminate structure of a supporting member/light absorption layer/curable resin layer. Place a semiconductor wafer (size: 10 mm×10 mm, thickness: 150 μm) on the curable resin layer of the laminated body for temporary fixation. By heating at 180°C for one hour to harden the curable resin layer, a test body for peeling test having a semiconductor wafer temporarily fixed to the support member was obtained.

For each test body, pulsed light was irradiated with a xenon lamp from the supporting member side of the laminated body for temporary fixation. The light irradiation conditions are as follows. As the xenon lamp, S2300 manufactured by Xenon Corporation was used. The wavelength range of the device is from 270 nm to the near infrared region. The irradiation distance is the distance between the light source, that is, the xenon lamp and the supporting member. ·Applied voltage: 3700 V ·Pulse width: 200 μs ·Illumination distance: 50 mm ·Number of exposures: 1 time · Irradiation time: 200 μs After light irradiation with a xenon lamp, the state of the test body was observed, and the peelability was evaluated using the following criteria. Table 1 shows the evaluation results. A: The semiconductor wafer is naturally peeled from the laminated body for temporary fixation only by light irradiation, or the semiconductor wafer is automatically peeled from the laminated body for temporary fixation without damage by inserting tweezers between the semiconductor wafer and the curable resin layer Peel off. B: Even if tweezers were inserted between the semiconductor wafer and the curable resin layer, the semiconductor wafer was not peeled from the laminated body for temporary fixation.

[Table 1] Comparative example 1 Comparative example 2 Example 1 Support member species Frosted glass plate Silicon wafer Glass slide Thickness [μm] 1100 775 1300 Transmittance 83% 1% or less More than 90 Light absorbing layer Titanium layer thickness [nm] 50 50 50 Copper layer thickness [nm] 200 200 200 Total thickness [nm] 250 250 250 Transmittance 1% or less 1% or less 1% or less Peel test B B A

(Study 2) Except for changing the thickness of the copper layer and the titanium layer constituting the light absorption layer as shown in Table 2, the same procedure as in "Study 1" was followed to produce a test body having a glass slide as a support member. In Comparative Example 3, the light absorption layer was not provided, and the curable resin layer was directly laminated on the support member. In Comparative Example 4, only the titanium layer was formed as the light absorption layer. The peelability of the obtained test body was evaluated by the same peel test as in "Study 1". The transmittance of the light-absorbing layer was measured by the same method as in "Study 1". The evaluation results are shown in Table 2.

[Table 2] Comparative example 3 Comparative example 4 Example 2 Example 3 Example 4 Example 1 Support member species Glass slide Glass slide Glass slide Glass slide Glass slide Glass slide Thickness [μm] 1300 1300 1300 1300 1300 1300 Transmittance More than 90 More than 90 More than 90 More than 90 More than 90 More than 90 Light absorbing layer Titanium layer thickness [nm] 0 50 50 50 50 50 Copper layer thickness [nm] 0 0 20 50 100 200 Total thickness [nm] 0 50 70 100 150 250 Transmittance - 3.4% 3.1% 1.0% or less 1.0% or less 1.0% or less Peel test B B A A A A

(Study 3) On a glass slide having a thickness of 1300 μm as a supporting member, a light absorbing layer including a single-layer or two-layer metal layer shown in Table 3 was formed by sputtering. In the table, the composition of the light-absorbing layer is shown in the order of stacking from the side of the glass slide. For example, "Ti(50)/Cu(200)" means that a titanium layer with a thickness of 50 nm is sequentially stacked from the side of the glass slide. , 200 nm thick copper layer. Example 1, Example 3, and Example 4 are the same as Example 1, Example 3, and Example 4 of Study 2. On the light-absorbing layer, a laminated body for temporary fixation having a laminated structure of a supporting member/light-absorbing layer/curable resin layer was produced in the same procedure as in "Study 1". Furthermore, in the same procedure as in "Study 1", a test body for a peeling test having a semiconductor wafer temporarily fixed to the support member was produced. The transmittance of the light-absorbing layer was measured by the same method as in "Study 1".

For each prepared test body, pulsed light was irradiated with a xenon lamp from the support member side of the laminated body for temporary fixation. The light irradiation conditions are as follows. As an irradiation device having a xenon lamp, a PulseForge 1300 manufactured by Novacentrix was used. The irradiation distance is the distance between the light source, that is, the xenon lamp and the supporting member. The pulse width was gradually increased by 10 μs from 150 μs, and the minimum value of the pulse width when the semiconductor wafer was naturally peeled off from the laminated body for temporary fixation by only light irradiation was recorded. The pulse light irradiation was performed while replacing the test body, and the number of times of irradiation to each test body was set to one. Table 3 shows the minimum value of the pulse width when the semiconductor wafer is peeled off. ·Applied voltage: 800 V ·Pulse width: 150 μs～700 μs ·Illumination distance: 6 mm ·Number of exposures: 1 time Based on the minimum value of the pulse width when the semiconductor wafer was peeled off, the peelability was evaluated based on the following criteria. AAA: 150 μs AA: 160 μs or more and less than 350 μs A: 350 μs or more and 700 μs or less, or peeling off by the dissolution of the light-absorbing layer (A: Melt) B: Not peelable under 700 μs

[table 3] Light absorbing layer Peel test Metal layer (thickness [nm]) Total thickness [nm] Transmittance Voltage [V] Pulse [μs] Evaluation Comparative example 3 - 0 More than 30% 800 Not peelable B Comparative example 4 Ti (50) 50 3.4% 800 Not peelable B Comparative example 5 Cu (50) 50 3.8% 800 Not peelable B Example 1 Ti(50)/Cu(200) 250 1.0% or less 800 200 AA Example 3 Ti(50)/Cu(50) 100 1.0% or less 800 150 AAA Example 4 Ti(50)/Cu(100) 150 1.0% or less 800 200 AA Example 5 Ti(100)/Cu(50) 150 1.0% or less 800 250 AA Example 6 Ti(100)/Cu(200) 300 1.0% or less 800 300 AA Example 7 Cu (250) 250 1.0% or less 800 700 A Example 8 Ti (150) 150 1.0% or less 800 340 A (Melt) Example 9 Ti(50)/Al(200) 250 1.0% or less 800 300 AA Example 10 Cr(50)/Cu(200) 250 1.0% or less 800 300 AA Example 11 Ti (250) 250 1.0% or less 800 340 A (Melt) Example 12 Cr (250) 250 1.0% or less 800 340 AA Example 13 Ni (250) 250 1.0% or less 800 340 A (Melt)

According to the results of Study 1, Study 2, and Study 3, it can be confirmed that the use of a laminated body for temporary fixation including a combination of a support member with a transmittance of 90% or more and a light-absorbing layer with a transmittance of 3.1% or less can improve the semiconductor After the member is temporarily fixed, the semiconductor member can be easily separated from the supporting member by irradiation of incoherent light from the xenon lamp.

1: Laminated body for temporary fixation 3: Light-absorbing laminate 10: Supporting member 30: Temporarily fix the material layer 31, 31A: Curable resin layer 31B, 32: Light absorption layer 31c: Hardened curable resin layer 31c': residue 40: Semiconductor substrate 41: Redistribution layer 45: Semiconductor components 50: Sealing layer 60: Semiconductor components A: Incoherent light S: Temporarily fix the top surface of the material layer (the top surface)

1(a), 1(b), and 1(c) are schematic diagrams showing an embodiment of a method of manufacturing a semiconductor device. Fig. 2 is a schematic diagram showing an embodiment of a light-absorbing laminate. 3(a) and 3(b) are schematic diagrams showing an embodiment of a method of manufacturing a semiconductor device. 4(a) and 4(b) are schematic diagrams showing an embodiment of a method of manufacturing a semiconductor device. 5(a), 5(b), and 5(c) are schematic diagrams showing an embodiment of a method of manufacturing a semiconductor device.

1: Laminated body for temporary fixation

10: Supporting member

30: Temporarily fix the material layer

31, 31A: Curable resin layer

31B, 32: Light absorption layer

S: Temporarily fix the top surface (top surface) of the material layer

Claims (8)

A method of manufacturing a semiconductor device, including in order: The step of preparing a laminated body for temporary fixation, the laminated body for temporary fixation includes a support member and a temporary fixation material layer provided on the support member, wherein the temporary fixation material layer has a layer including the temporary fixation material layer At least one hardening resin layer on the outermost surface; A semiconductor member having a semiconductor substrate and a rewiring layer provided on one side of the semiconductor substrate is temporarily fixed to the side of the curable resin layer via the temporary fixing material layer with the rewiring layer positioned on the side The step of the supporting member; A step of processing the semiconductor member temporarily fixed to the support member; and The step of irradiating the laminated body for temporary fixation with incoherent light from the supporting member side, thereby separating the semiconductor member from the supporting member, and A part or all of the temporary fixing material layer is a light absorbing layer that absorbs light and generates heat, The transmittance of the support member to the incoherent light is more than 90%, The transmittance of the temporary fixing material layer to the incoherent light is 3.1% or less. The method according to claim 1, wherein the incoherent light includes infrared rays. The method according to claim 1 or 2, wherein the light source of the incoherent light is a xenon lamp. The method according to any one of claims 1 to 3, wherein the temporary fixing material layer has a metal layer provided as a layer different from the curable resin layer as the light absorption layer. The method according to claim 4, wherein the transmittance of the metal layer to the incoherent light is 3.1% or less. A light-absorbing laminate has a supporting member and a light-absorbing layer arranged on the supporting member, The transmittance of the supporting member to the incoherent light irradiated from the xenon lamp is 90% or more, The light absorbing layer is a metal layer, and the transmittance of the metal layer to incoherent light irradiated from a xenon lamp is 3.1% or less. The light-absorbing laminate according to claim 6, wherein the thickness of the light-absorbing layer is 75 nm or more. A laminated body for temporary fixation, comprising the light-absorbing laminated body described in claim 6 or 7 and a curable resin layer, The metal layer of the light-absorbing laminate and the curable resin layer are sequentially laminated from the support member side of the light-absorbing laminate, thereby forming a temporary layer having the metal layer and the curable resin layer Fixed material layer.

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