TW202036663A - Semiconductor device manufacturing method, light-absorbing layered body, and temporary-fixing-use layered body - Google Patents
Semiconductor device manufacturing method, light-absorbing layered body, and temporary-fixing-use layered body Download PDFInfo
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- TW202036663A TW202036663A TW108143460A TW108143460A TW202036663A TW 202036663 A TW202036663 A TW 202036663A TW 108143460 A TW108143460 A TW 108143460A TW 108143460 A TW108143460 A TW 108143460A TW 202036663 A TW202036663 A TW 202036663A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/141—Feedstock
- Y02P20/143—Feedstock the feedstock being recycled material, e.g. plastics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/62—Plastics recycling; Rubber recycling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Dicing (AREA)
Abstract
Description
本發明是有關於一種製造半導體裝置的方法、光吸收積層體及暫時固定用積層體。The present invention relates to a method of manufacturing a semiconductor device, a light-absorbing laminate, and a laminate for temporary fixation.
於半導體元件的製造中,有時會在將積體電路裝入半導體晶圓等半導體構件中後對半導體構件進行加工。對半導體構件例如實施背面的研削、或切割之類的加工處理。半導體構件通常於暫時固定於支撐構件的狀態下被加工,其後半導體構件自支撐構件被分離。例如,專利文獻1中,作為將半導體構件自支撐構件分離的方法,揭示了如下方法,即經由暫時固定材層將半導體構件暫時固定於支撐構件,進行加工處理後一面進行加熱一面將半導體構件自支撐構件進行物理分離。專利文獻2、專利文獻3中揭示了一種藉由對暫時固定材層照射雷射而將半導體構件自支撐構件分離的方法。
[現有技術文獻]
[專利文獻]In the manufacture of semiconductor elements, the semiconductor component may be processed after the integrated circuit is incorporated into a semiconductor component such as a semiconductor wafer. For the semiconductor member, for example, processing such as grinding or cutting of the back surface is performed. The semiconductor member is usually processed in a state of being temporarily fixed to the supporting member, and thereafter the semiconductor member is separated from the supporting member. For example, in
[專利文獻1]日本專利特開2012-126803號公報 [專利文獻2]日本專利特開2016-138182號公報 [專利文獻3]日本專利特開2013-033814號公報[Patent Document 1] Japanese Patent Laid-Open No. 2012-126803 [Patent Document 2] Japanese Patent Laid-Open No. 2016-138182 [Patent Document 3] Japanese Patent Laid-Open No. 2013-033814
[發明所欲解決之課題] 本發明針對包含對暫時固定於支撐構件的半導體構件進行加工的步驟的製造半導體裝置的方法,提供一種藉由簡單的處理可容易地將加工後的半導體構件自支撐構件分離的方法。 [解決課題之手段][The problem to be solved by the invention] The present invention is directed to a method of manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a support member, and provides a method for easily separating the processed semiconductor member from the support member by simple processing. [Means to solve the problem]
本發明的一方面的製造半導體裝置的方法依序包括: 準備暫時固定用積層體的步驟,所述暫時固定用積層體包括支撐構件及設置於所述支撐構件上的暫時固定材層,其中所述暫時固定材層具有包含所述暫時固定材層的至少其中一個最表面的硬化性樹脂層; 將具有半導體基板及設置於所述半導體基板的其中一面側的再配線層的半導體構件以所述再配線層位於所述硬化性樹脂層側的方向,經由所述暫時固定材層暫時固定於所述支撐構件的步驟; 對暫時固定於所述支撐構件的所述半導體構件進行加工的步驟;以及 對所述暫時固定用積層體自所述支撐構件側照射非相干光,藉此將所述半導體構件自所述支撐構件分離的步驟,且 所述暫時固定材層具有吸收光而產生熱的光吸收層。所述光吸收層作為所述硬化性樹脂層的一部分或與所述硬化性樹脂層不同的層而設置。所述支撐構件相對於所述非相干光的透過率為90%以上。所述暫時固定材層相對於所述非相干光的透過率為3.1%以下。A method of manufacturing a semiconductor device according to an aspect of the present invention sequentially includes: The step of preparing a laminated body for temporary fixation, the laminated body for temporary fixation includes a support member and a temporary fixation material layer provided on the support member, wherein the temporary fixation material layer has at least one that includes the temporary fixation material layer One of the most surface hardening resin layers; A semiconductor member having a semiconductor substrate and a rewiring layer provided on one side of the semiconductor substrate is temporarily fixed to the rewiring layer in the direction in which the rewiring layer is located on the side of the curable resin layer via the temporary fixing material layer. The steps of the supporting member; A step of processing the semiconductor member temporarily fixed to the support member; and The step of irradiating the laminated body for temporary fixation with incoherent light from the supporting member side, thereby separating the semiconductor member from the supporting member, and The temporary fixing material layer has a light absorption layer that absorbs light and generates heat. The light absorption layer is provided as a part of the curable resin layer or a layer different from the curable resin layer. The transmittance of the support member with respect to the incoherent light is 90% or more. The transmittance of the temporary fixing material layer with respect to the incoherent light is 3.1% or less.
根據所述方法,藉由非相干光的照射這一簡單的處理,可容易地將加工後的半導體構件自支撐構件分離。與作為相干光的雷射的照射相比較,非相干光的照射易確保大的照射面積,故可簡單地進行。藉由暫時固定用積層體包含具有特定透過率的支撐構件及光吸收層的組合,即使為非相干光的照射,亦可使半導體構件成為容易自支撐構件分離的狀態。 [發明的效果]According to the method, the processed semiconductor member can be easily separated from the supporting member by a simple process of irradiation of incoherent light. Compared with the irradiation of laser light which is coherent light, the irradiation of incoherent light can easily ensure a large irradiation area, so it can be easily performed. Since the laminated body for temporary fixation includes a combination of a support member having a specific transmittance and a light absorption layer, even if it is irradiated with incoherent light, the semiconductor member can be easily separated from the support member. [Effects of the invention]
根據本發明,針對包含對暫時固定於支撐構件的半導體構件進行加工的步驟的製造半導體裝置的方法,,提供一種藉由簡單的處理可容易地將加工後的半導體構件自支撐構件分離的方法。本發明的方法即使為能量較小的非相干光,亦可容易地將加工後的半導體構件自支撐構件分離。藉由使用能量小的非相干光,可抑制半導體構件的再配線層之類的微細結構的損傷。According to the present invention, for a method of manufacturing a semiconductor device including a step of processing a semiconductor member temporarily fixed to a supporting member, a method for easily separating the processed semiconductor member from the supporting member by simple processing is provided. The method of the present invention can easily separate the processed semiconductor member from the supporting member even if it is incoherent light with low energy. By using incoherent light with low energy, it is possible to suppress damage to fine structures such as rewiring layers of semiconductor components.
以下,對本發明的若干實施形態進行詳細說明。其中,本發明並不限定於以下實施形態。Hereinafter, several embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.
本說明書中所參照的各圖中的構成要素的大小是概念上的大小,構成要素間的大小的相對關係並不限定於各圖所示者。有時省略重覆的說明。The size of the constituent elements in each figure referred to in this specification is a conceptual size, and the relative size of the constituent elements is not limited to that shown in each figure. Sometimes repeated explanations are omitted.
本說明書中的數值及其範圍亦並非限制本發明的範圍。於本說明書中使用「~」所表示的數值範圍表示包含「~」的前後所記載的數值分別作為最小值及最大值的範圍。於本說明書中階段性地記載的數值範圍中,一個數值範圍中所記載的上限值或下限值亦可置換為另一階段的記載的數值範圍的上限值或下限值。於本說明書中所記載的數值範圍中,該數值範圍的上限值或下限值亦可置換為實施例中所示的值。The numerical values and ranges in this specification do not limit the scope of the present invention. In this specification, the numerical range indicated by "~" means a range that includes the numerical values described before and after "~" as the minimum and maximum values, respectively. In the numerical ranges described stepwise in this specification, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in another step. In the numerical range described in this specification, the upper limit or lower limit of the numerical range may be replaced with the value shown in the examples.
於本說明書中,(甲基)丙烯酸是指丙烯酸或與其對應的甲基丙烯酸。(甲基)丙烯酸酯、(甲基)丙烯醯基等其他的類似表述亦同樣。In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid. The same applies to other similar expressions such as (meth)acrylate and (meth)acryloyl.
為了製造半導體裝置,準備暫時固定用積層體,所述暫時固定用積層體用以於對半導體構件進行加工的期間將半導體構件暫時固定於支撐構件。圖1(a)、圖1(b)及圖1(c)是表示暫時固定用積層體的若干實施形態的剖面圖。圖1(a)、圖1(b)及圖1(c)所示的暫時固定用積層體1具有支撐構件10及設置於支撐構件10上的暫時固定材層30。暫時固定材層30具有硬化性樹脂層31。硬化性樹脂層31包含暫時固定材層30的與支撐構件10為相反側的最表面S。此外,暫時固定材層30具有作為與硬化性樹脂層31不同的層而設置的光吸收層32、或作為硬化性樹脂層31的一部分而設置的光吸收層31B。光吸收層32、光吸收層31B是吸收光而產生熱的層。In order to manufacture a semiconductor device, a laminated body for temporary fixation is prepared for temporarily fixing the semiconductor member to the support member while the semiconductor member is being processed. Fig. 1 (a), Fig. 1 (b) and Fig. 1 (c) are sectional views showing some embodiments of the laminated body for temporary fixation. The laminated
圖1(a)所示的暫時固定用積層體1的暫時固定材層30具有:硬化性樹脂層31,包含與支撐構件10為相反側的最表面S;光吸收層32,作為與硬化性樹脂層31不同的層而設置。換言之,於支撐構件10上,依序積層有光吸收層32及硬化性樹脂層31。The temporary
圖1(b)所示的暫時固定用積層體1的暫時固定材層30包括包含光吸收層31B作為其一部分的硬化性樹脂層31。此處的硬化性樹脂層31具有:光吸收層31B,包含最表面S;實質上為非發熱性的硬化性樹脂層31A,設置於光吸收層31B的支撐構件10側。The temporary
於圖1(c)所示的暫時固定用積層體1的暫時固定材層30的情況下,不僅設置有與圖1(b)同樣的光吸收層31B,進而亦設置有作為與硬化性樹脂層31不同的層的光吸收層32。亦可進而於硬化性樹脂層31A與支撐構件10之間設置構成硬化性樹脂層31的一部分的光吸收層,來代替作為與硬化性樹脂層31不同的層而設置的光吸收層32。In the case of the temporary
暫時固定用積層體1例如可藉由於支撐構件10上依次形成各層而獲得。亦可準備具有硬化性樹脂層及光吸收層的積層膜並將該些積層於支撐構件10上。亦可準備圖2所例示的光吸收積層體,並使用其來獲得暫時固定用積層體1。圖2所示的光吸收積層體3具有支撐構件10及設置於支撐構件10上的光吸收層32。光吸收層32亦可為與支撐構件10鄰接的金屬層。作為光吸收層32的金屬層相對於自氙燈照射的非相干光的透過率可為3.1%以下、3.0%以下、2.5%以下、或1.5%以下,且可為0%以上。圖1(a)、圖1(b)及圖1(c)的暫時固定用積層體1亦可視為包含光吸收積層體及硬化性樹脂層的積層體。例如可藉由包含在光吸收積層體3的光吸收層32上形成硬化性樹脂層31的步驟的方法來製造圖1(a)、圖1(b)及圖1(c)的暫時固定用積層體1。The laminated
圖3(a)及圖3(b)、圖4(a)及圖4(b)、以及圖5(a)、圖5(b)及圖5(c)是表示使用暫時固定用積層體製造半導體裝置的方法的一實施形態的步驟圖。此處例示使用圖1(a)的暫時固定用積層體1的方法,但亦可使用其他構成的暫時固定用積層體同樣地製造半導體裝置。圖3(a)及圖3(b)~圖5(a)、圖5(b)及圖5(c)所示的方法依序包括:經由暫時固定材層30將半導體構件45暫時固定於支撐構件10的步驟(圖3(a)及圖3(b));對暫時固定於支撐構件10的半導體構件45進行加工的步驟(圖4(a));形成對經加工的半導體構件45進行密封的密封層50的步驟(圖4(b));以及對暫時固定用積層體1自支撐構件10側照射非相干光A,藉此將半導體構件45自支撐構件10分離的步驟(圖4(b))。半導體構件45具有半導體基板40及設置於半導體基板40的其中一面側的再配線層41。半導體構件45以再配線層41位於硬化性樹脂層31側的方向配置於硬化性樹脂層31上。經由暫時固定材層30將半導體構件45暫時固定於支撐構件10的步驟可包含:將半導體構件45以再配線層41位於硬化性樹脂層31側的方向配置於硬化性樹脂層31上;以及使硬化性樹脂層31硬化。Figure 3 (a) and Figure 3 (b), Figure 4 (a) and Figure 4 (b), and Figure 5 (a), Figure 5 (b) and Figure 5 (c) show the use of temporary fixation laminated body A step diagram of an embodiment of a method of manufacturing a semiconductor device. Here, the method of using the laminated
構成暫時固定用積層體1的支撐構件10及暫時固定材層30具有相對於對暫時固定用積層體1照射的非相干光的特定透過率。支撐構件10相對於非相干光的透過率為90%以上。暫時固定材層30相對於非相干光的透過率為3.1%以下。藉由支撐構件10的透過率高且暫時固定材層30的透過率低,即使照射低能量的非相干光,亦可容易地將半導體構件45自支撐構件10分離。若非相干光的能量低,則半導體構件45的再配線層41或其他周邊構件不易受到光照射所帶來的損傷。就同樣的觀點而言,支撐構件10相對於非相干光的透過率可為60%以上、或70%以上,且可為100%以下。暫時固定材層30相對於非相干光的透過率可為3.0%以下、2.5%以下、或1.5%以下,且可為0%以上。The
支撐構件10為具有高透過率且可耐受對半導體構件45進行加工時所受到的負荷的板狀體。作為支撐構件10的例子,可列舉無機玻璃基板、透明樹脂基板。The
支撐構件10的厚度例如可為0.1 mm~2.0 mm。若支撐構件10的厚度為0.1 mm以上,則有操作變容易的傾向。若支撐構件10的厚度為2.0 mm以下,則有可抑制材料費的傾向。The thickness of the supporting
暫時固定材層30的供半導體構件45暫時固定的一側的最表面S為硬化性樹脂層31的表面。例如藉由於半導體構件45被載置於硬化性樹脂層31上的狀態下使硬化性樹脂層31硬化,可將半導體構件45暫時固定於支撐構件10。換言之,經由具有已硬化的硬化性樹脂層31c的暫時固定材層30,半導體構件45可臨時接著於支撐構件10。The outermost surface S of the temporary
光吸收層32為吸收光而產生熱的層。藉由設置光吸收層32,暫時固定材層30可容易地具有低透過率。The
硬化性樹脂層31為包含藉由熱或光而硬化的硬化性樹脂組成物的層。硬化前的硬化性樹脂層31具有可藉由壓接等來貼附半導體構件45的程度的接著性。已硬化的硬化性樹脂層31c於半導體構件45被加工的期間保持半導體構件45。本說明書中,構成硬化性樹脂層31的導電性粒子以外的成分全部視為硬化性樹脂組成物的成分。The
就應力緩和的觀點而言,硬化性樹脂層31的厚度例如可為50 μm以下、40 μm以下、或30 μm以下且0.1 μm以上,亦可為50 μm以下、40 μm以下、或30 μm以下且1 μm以上。From the viewpoint of stress relaxation, the thickness of the
已硬化的硬化性樹脂層31c於25℃下的儲存彈性係數可為5 MPa~100 MPa。若已硬化的硬化性樹脂層31c於25℃下的儲存彈性係數為5 MPa以上,則容易保持半導體構件45而不使支撐構件10撓曲。另外,當將半導體構件45自支撐構件分離時,有硬化性樹脂層31c於半導體構件45上不易殘留殘渣的傾向。若已硬化的硬化性樹脂層31c於25℃下的儲存彈性係數為100 MPa以下,則有可減小半導體構件45的位置偏移的傾向。就同樣的觀點而言,已硬化的硬化性樹脂層31c於25℃下的儲存彈性係數可為5.5 MPa以上、6 MPa以上、或6.3 MPa以上且100 MPa以下,亦可為5.5 MPa以上、6 MPa以上、或6.3 MPa以上且90 MPa以下,亦可為5.5 MPa以上、6 MPa以上、或6.3 MPa以上且80 MPa以下,亦可為5.5 MPa以上、6 MPa以上、或6.3 MPa以上且70 MPa以下,亦可為5.5 MPa以上、6 MPa以上、或6.3 MPa以上且65 MPa以下。本說明書中,已硬化的硬化性樹脂層31c的儲存彈性係數是指藉由於升溫速度5℃/min、頻率1 Hz、拉伸模式的條件下進行測定的黏彈性測定而求出的值。The storage elastic coefficient of the hardened
已硬化的硬化性樹脂層31c於25℃下的儲存彈性係數例如可藉由增大後述烴樹脂的含量、應用具有高Tg的烴樹脂、將絕緣性填料添加於硬化性樹脂組成物等方法而增加。The storage elasticity coefficient of the cured
已硬化的硬化性樹脂層31c於250℃下的儲存彈性係數可為0.70 MPa以上、0.80 MPa以上、0.85 MPa以上、或0.90 MPa以上且2.00 MPa以下,亦可為0.70 MPa以上、0.80 MPa以上、0.85 MPa以上、或0.90 MPa以上且1.90 MPa以下,亦可為0.70 MPa以上、0.80 MPa以上、0.85 MPa以上、或0.90 MPa以上且1.80 MPa以下,亦可為0.70 MPa以上、0.80 MPa以上、0.85 MPa以上、或0.90 MPa以上且1.75 MPa以下。The storage elastic coefficient of the cured
構成硬化性樹脂層31的硬化性樹脂組成物可含有熱硬化性樹脂及烴樹脂。烴樹脂為主骨架包含烴的樹脂。若硬化性樹脂組成物包含烴樹脂,則於低溫下容易將半導體構件45貼附於硬化性樹脂層31。The curable resin composition constituting the
就硬化性樹脂層31的低溫貼附性的觀點而言,烴樹脂的玻璃轉移溫度(Tg)可為50℃以下。就硬化性樹脂層31的良好的剝離性的觀點而言,烴樹脂的Tg可為-100℃以上、或-50℃以上。From the viewpoint of the low-temperature adhesiveness of the
烴樹脂的Tg為藉由示差掃描熱量測定(Differential Scanning Calorimetry,DSC)而獲得的中間點玻璃轉移溫度值。具體而言,烴樹脂的Tg為於升溫速度10℃/min、測定溫度:-80℃~80℃的條件下測定熱量變化,藉由依據日本工業標準(Japanese Industrial Standards,JIS)K 7121的方法而算出的中間點玻璃轉移溫度。The Tg of the hydrocarbon resin is the midpoint glass transition temperature value obtained by differential scanning calorimetry (Differential Scanning Calorimetry, DSC). Specifically, the Tg of a hydrocarbon resin is measured at a heating rate of 10°C/min and a measurement temperature of -80°C to 80°C, by a method based on Japanese Industrial Standards (JIS) K 7121 And the calculated intermediate point glass transition temperature.
烴樹脂例如包含選自由乙烯-丙烯共聚物、乙烯-1-丁烯共聚物、乙烯-丙烯-1-丁烯共聚物、乙烯-1-己烯共聚物、乙烯-1-辛烯共聚物、乙烯-苯乙烯共聚物、乙烯-降冰片烯共聚物、丙烯-1-丁烯共聚物、乙烯-丙烯-非共軛二烯共聚物、乙烯-1-丁烯-非共軛二烯共聚物、乙烯-丙烯-1-丁烯-非共軛二烯共聚物、聚異戊二烯、聚丁二烯、苯乙烯-丁二烯-苯乙烯嵌段共聚物(styrene-butadiene-styrene block copolymer,SBS)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(styrene-isoprene-styrene block copolymer,SIS)、苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(styrene-ethylene-butylene-styrene block copolymer,SEBS)、苯乙烯-乙烯-丙烯-苯乙烯嵌段共聚物(styrene-ethylene-propylene-styrene block copolymer,SEPS)、及該些的氫化物所組成的群組中的至少一種。該些烴樹脂可具有羧基。羧基例如藉由使用馬來酸酐等的改質而導入。烴樹脂亦可包括包含源自苯乙烯的單體單元的苯乙烯系樹脂。苯乙烯系樹脂亦可為苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物(SEBS)。The hydrocarbon resin includes, for example, selected from ethylene-propylene copolymer, ethylene-1-butene copolymer, ethylene-propylene-1-butene copolymer, ethylene-1-hexene copolymer, ethylene-1-octene copolymer, Ethylene-styrene copolymer, ethylene-norbornene copolymer, propylene-1-butene copolymer, ethylene-propylene-non-conjugated diene copolymer, ethylene-1-butene-non-conjugated diene copolymer , Ethylene-propylene-1-butene-non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymer (styrene-butadiene-styrene block copolymer , SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (styrene-ethylene-butylene -styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), and at least one of the group consisting of these hydrides . These hydrocarbon resins may have carboxyl groups. The carboxyl group is introduced by modification using maleic anhydride or the like, for example. The hydrocarbon resin may also include a styrene-based resin containing monomer units derived from styrene. The styrene resin may also be a styrene-ethylene-butylene-styrene block copolymer (SEBS).
烴樹脂的重量平均分子量(Mw)可為1萬~500萬或10萬~200萬。若重量平均分子量為1萬以上,則有容易確保暫時固定材層30的耐熱性的傾向。若重量平均分子量為500萬以下,則有容易抑制暫時固定材層30的流動性(flow)的降低及貼附性的降低的傾向。此處的重量平均分子量是利用凝膠滲透層析法(Gel Permeation Chromatography,GPC)並使用利用標準聚苯乙烯的校準曲線而得的聚苯乙烯換算值。The weight average molecular weight (Mw) of the hydrocarbon resin can be 10,000 to 5 million or 100,000 to 2 million. If the weight average molecular weight is 10,000 or more, the heat resistance of the temporary
相對於構成硬化性樹脂層31的硬化性樹脂組成物的總質量100質量份,烴樹脂的含量可為40質量份以上、50質量份以上或60質量份以上且90質量份以下,亦可為40質量份以上、50質量份以上或60質量份以上且85質量份以下,亦可為40質量份以上、50質量份以上或60質量份以上且80質量份以下。若烴樹脂的含量處於該些數值範圍內,則有容易形成薄且平坦的硬化性樹脂層31的傾向。另外,硬化性樹脂層31有容易具有低溫下的良好的貼附性、及硬化後的適當的儲存彈性係數的傾向。With respect to 100 parts by mass of the curable resin composition constituting the
熱硬化性樹脂為藉由熱硬化反應而使硬化性樹脂組成物硬化的成分。熱硬化反應可為熱硬化樹脂與硬化劑的反應、熱硬化性樹脂的自聚合、或該些的組合。作為熱硬化性樹脂的例子,可列舉:環氧樹脂、丙烯酸樹脂、矽酮樹脂、酚樹脂、熱硬化型聚醯亞胺樹脂、聚胺基甲酸酯樹脂、三聚氰胺樹脂、及脲樹脂。該些可單獨使用一種或將兩種以上組合使用。自耐熱性、作業性、及可靠性更優異的方面而言,熱硬化性樹脂可包含環氧樹脂。The thermosetting resin is a component that hardens the curable resin composition by a thermosetting reaction. The thermosetting reaction may be the reaction of the thermosetting resin and the hardener, the self-polymerization of the thermosetting resin, or a combination of these. Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenol resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. These can be used alone or in combination of two or more. The thermosetting resin may contain an epoxy resin from the point of being more excellent in heat resistance, workability, and reliability.
環氧樹脂為具有一個以上的環氧基的化合物。環氧樹脂亦可具有兩個以上的環氧基。作為具有兩個以上的環氧基的環氧樹脂的例子,可列舉:雙酚A型環氧樹脂、酚醛清漆型環氧樹脂(苯酚酚醛清漆型環氧樹脂等)、縮水甘油胺型環氧樹脂、含雜環的環氧樹脂、及脂環式環氧樹脂。The epoxy resin is a compound having one or more epoxy groups. The epoxy resin may have two or more epoxy groups. Examples of epoxy resins having two or more epoxy groups include: bisphenol A epoxy resins, novolac epoxy resins (phenol novolac epoxy resins, etc.), glycidylamine epoxy resins Resins, heterocyclic epoxy resins, and alicyclic epoxy resins.
硬化性樹脂組成物可包含熱硬化性樹脂及其硬化劑。相對於硬化性樹脂組成物的總質量100質量份,熱硬化性樹脂及其硬化劑的合計含量可為10質量份以上、15質量份以上或20質量份以上且60質量份以下,亦可為10質量份以上、15質量份以上或20質量份以上且50質量份以下,亦可為10質量份以上、15質量份以上或20質量份以上且40質量份以下。若熱硬化性樹脂及其硬化劑的合計含量處於該些範圍內,則有可容易形成薄且平坦的硬化性樹脂層的傾向、及已硬化的硬化性樹脂層31c的耐熱性更優異的傾向。The curable resin composition may contain a thermosetting resin and its curing agent. With respect to 100 parts by mass of the total mass of the curable resin composition, the total content of the thermosetting resin and its curing agent may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 60 parts by mass or less, or 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 50 parts by mass or less, and may also be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more and 40 parts by mass or less. If the total content of the thermosetting resin and its curing agent is within these ranges, there is a tendency that a thin and flat curable resin layer can be easily formed, and the cured
於使用環氧樹脂作為熱硬化性樹脂的情況下,硬化性樹脂組成物可包含環氧樹脂的硬化劑。環氧樹脂的硬化劑並無特別限制,作為其例子,可列舉胺、聚醯胺、酸酐、多硫醚、三氟化硼、雙酚(雙酚A、雙酚F、雙酚S等)、及酚樹脂(苯酚酚醛清漆樹脂、雙酚A酚醛清漆樹脂、甲酚酚醛清漆樹脂、苯酚芳烷基樹脂等)。When an epoxy resin is used as the thermosetting resin, the curable resin composition may contain a curing agent for the epoxy resin. The hardener of epoxy resin is not particularly limited. Examples thereof include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, and bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.) , And phenol resins (phenol novolak resin, bisphenol A novolak resin, cresol novolak resin, phenol aralkyl resin, etc.).
熱硬化性樹脂組成物可進而包含促進環氧樹脂等熱硬化性樹脂的硬化反應的硬化促進劑。作為硬化促進劑的例子,可列舉:咪唑化合物、雙氰胺、二羧酸二醯肼、三苯基膦、四苯基鏻四苯基硼酸鹽、2-乙基-4-甲基咪唑-四苯基硼酸鹽、及1,8-二氮雜雙環[5,4,0]十一烯-7-四苯基硼酸鹽。該些可單獨使用一種或將兩種以上組合使用。The thermosetting resin composition may further include a curing accelerator that promotes the curing reaction of thermosetting resins such as epoxy resins. Examples of hardening accelerators include imidazole compounds, dicyandiamide, dihydrazine dicarboxylic acid, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole- Tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These can be used alone or in combination of two or more.
相對於熱硬化性樹脂及硬化劑的合計量100質量份,硬化促進劑的含量可為0.01質量份~5質量份。若硬化促進劑的含量為所述範圍內,則有硬化性樹脂層的硬化性及硬化後的耐熱性更優異的傾向。The content of the curing accelerator may be 0.01 parts by mass to 5 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin and the curing agent. If the content of the hardening accelerator is within the above range, the hardenability of the curable resin layer and the heat resistance after hardening tend to be more excellent.
構成硬化性樹脂層31的硬化性樹脂組成物可包含具有聚合性不飽和基的聚合性單體、及聚合起始劑。於該情況下,硬化性樹脂組成物亦可進而包含所述烴樹脂。The curable resin composition constituting the
聚合性單體為具有乙烯性不飽和基等聚合性不飽和基的化合物。聚合性單體可為一官能、二官能、或三官能以上的任一種,但就獲得充分的硬化性的觀點而言,可使用二官能以上的聚合性單體。作為聚合性單體的例子,可列舉:(甲基)丙烯酸酯、偏二鹵乙烯、乙烯基醚、乙烯基酯、乙烯基吡啶、乙烯基醯胺、及芳基化乙烯基。聚合性單體可為(甲基)丙烯酸酯或(甲基)丙烯酸。(甲基)丙烯酸酯亦可為單官能(甲基)丙烯酸酯、二官能(甲基)丙烯酸酯、三官能以上的多官能(甲基)丙烯酸酯、或該些的組合。The polymerizable monomer is a compound having a polymerizable unsaturated group such as an ethylenically unsaturated group. The polymerizable monomer may be any one of monofunctional, bifunctional, or trifunctional or higher, but from the viewpoint of obtaining sufficient curability, a polymerizable monomer having a bifunctional or higher function may be used. Examples of polymerizable monomers include (meth)acrylates, vinylidene halides, vinyl ethers, vinyl esters, vinyl pyridines, vinyl amides, and arylated vinyl groups. The polymerizable monomer may be (meth)acrylate or (meth)acrylic acid. The (meth)acrylate may also be a monofunctional (meth)acrylate, a difunctional (meth)acrylate, a trifunctional or higher multifunctional (meth)acrylate, or a combination of these.
作為單官能(甲基)丙烯酸酯的例子,可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸丁氧基乙酯、(甲基)丙烯酸異戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛基庚酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-3-氯-2-羥基丙酯、(甲基)丙烯酸-2-羥基丁酯、甲氧基聚乙二醇(甲基)丙烯酸酯、乙氧基聚乙二醇(甲基)丙烯酸酯、甲氧基聚丙二醇(甲基)丙烯酸酯、乙氧基聚丙二醇(甲基)丙烯酸酯、及丁二酸單(2-(甲基)丙烯醯氧基乙基)酯等脂肪族(甲基)丙烯酸酯;以及(甲基)丙烯酸苄酯、(甲基)丙烯酸苯酯、(甲基)丙烯酸鄰聯苯酯、(甲基)丙烯酸-1-萘酯、(甲基)丙烯酸-2-萘酯、(甲基)丙烯酸苯氧基乙酯、(甲基)丙烯酸對異丙苯基苯氧基乙酯、(甲基)丙烯酸鄰苯基苯氧基乙酯、(甲基)丙烯酸-1-萘氧基乙酯、(甲基)丙烯酸-2-萘氧基乙酯、苯氧基聚乙二醇(甲基)丙烯酸酯、壬基苯氧基聚乙二醇(甲基)丙烯酸酯、苯氧基聚丙二醇(甲基)丙烯酸酯、(甲基)丙烯酸-2-羥基-3-苯氧基丙酯、(甲基)丙烯酸-2-羥基-3-(鄰苯基苯氧基)丙酯、(甲基)丙烯酸-2-羥基-3-(1-萘氧基)丙酯、及(甲基)丙烯酸-2-羥基-3-(2-萘氧基)丙酯等芳香族(甲基)丙烯酸酯。Examples of monofunctional (meth)acrylates include: methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, (meth)acrylate Base) tertiary butyl acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, ( Heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, (meth)acrylate-2 -Hydroxypropyl ester, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxy Polyethylene glycol (meth)acrylate, methoxy polypropylene glycol (meth) acrylate, ethoxy polypropylene glycol (meth) acrylate, and succinic acid mono(2-(meth)acrylic acid Aliphatic (meth)acrylates such as methyl ethyl) ester; and benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, (meth)acrylic acid-1- Naphthyl ester, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylbenzene (meth)acrylate Oxyethyl, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, nonylbenzene Polyoxyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, (meth)acrylic acid-2-hydroxy-3-phenoxypropyl ester, (meth)acrylic acid-2 -Hydroxy-3-(o-phenylphenoxy)propyl ester, (meth)acrylic acid-2-hydroxy-3-(1-naphthyloxy)propyl ester, and (meth)acrylic acid-2-hydroxy-3 -Aromatic (meth)acrylates such as (2-naphthyloxy)propyl ester.
作為二官能(甲基)丙烯酸酯的例子,可列舉:乙二醇二(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、丙二醇二(甲基)丙烯酸酯、二丙二醇二(甲基)丙烯酸酯、三丙二醇二(甲基)丙烯酸酯、四丙二醇二(甲基)丙烯酸酯、聚丙二醇二(甲基)丙烯酸酯、乙氧基化聚丙二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、3-甲基-1,5-戊二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、2-丁基-2-乙基-1,3-丙二醇二(甲基)丙烯酸酯、1,9-壬二醇二(甲基)丙烯酸酯、1,10-癸二醇二(甲基)丙烯酸酯、甘油二(甲基)丙烯酸酯、三環癸烷二甲醇(甲基)丙烯酸酯、及乙氧基化2-甲基-1,3-丙二醇二(甲基)丙烯酸酯等脂肪族(甲基)丙烯酸酯;以及乙氧基化雙酚A二(甲基)丙烯酸酯、丙氧基化雙酚A二(甲基)丙烯酸酯、乙氧基化丙氧基化雙酚A二(甲基)丙烯酸酯、乙氧基化雙酚F二(甲基)丙烯酸酯、丙氧基化雙酚F二(甲基)丙烯酸酯、乙氧基化丙氧基化雙酚F二(甲基)丙烯酸酯、乙氧基化芴型二(甲基)丙烯酸酯、丙氧基化芴型二(甲基)丙烯酸酯、及乙氧基化丙氧基化芴型二(甲基)丙烯酸酯等芳香族(甲基)丙烯酸酯。Examples of difunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, Tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth) Acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate Esters, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1 ,6-Hexanediol di(meth)acrylate, 2-butyl-2-ethyl-1,3-propanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylic acid Ester, 1,10-decanediol di(meth)acrylate, glycerol di(meth)acrylate, tricyclodecane dimethanol (meth)acrylate, and ethoxylated 2-methyl-1 , 3-propanediol di(meth)acrylate and other aliphatic (meth)acrylates; and ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylic acid Ester, ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate , Ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, and ethyl Aromatic (meth)acrylates such as oxylated propoxylated fluorene type di(meth)acrylates.
作為三官能以上的多官能(甲基)丙烯酸酯的例子,可列舉:三羥甲基丙烷三(甲基)丙烯酸酯、乙氧基化三羥甲基丙烷三(甲基)丙烯酸酯、丙氧基化三羥甲基丙烷三(甲基)丙烯酸酯、乙氧基化丙氧基化三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、乙氧基化季戊四醇三(甲基)丙烯酸酯、丙氧基化季戊四醇三(甲基)丙烯酸酯、乙氧基化丙氧基化季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、乙氧基化季戊四醇四(甲基)丙烯酸酯、丙氧基化季戊四醇四(甲基)丙烯酸酯、乙氧基化丙氧基化季戊四醇四(甲基)丙烯酸酯、二-三羥甲基丙烷四丙烯酸酯、及二季戊四醇六(甲基)丙烯酸酯等脂肪族(甲基)丙烯酸酯;以及苯酚酚醛清漆型環氧基(甲基)丙烯酸酯、及甲酚酚醛清漆型環氧基(甲基)丙烯酸酯等芳香族環氧基(甲基)丙烯酸酯。Examples of polyfunctional (meth)acrylates having three or more functions include: trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propane Oxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated Pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, ethoxylate Alkylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, di-trimethylolpropane tetraacrylate Aliphatic (meth)acrylate such as dipentaerythritol hexa(meth)acrylate; and phenol novolac type epoxy (meth)acrylate, and cresol novolac type epoxy (meth) Aromatic epoxy (meth)acrylates such as acrylates.
該些(甲基)丙烯酸酯可單獨使用一種或將兩種以上組合使用。亦可將該些(甲基)丙烯酸酯與其他聚合性單體組合。These (meth)acrylates can be used individually by 1 type or in combination of 2 or more types. You may combine these (meth)acrylates with other polymerizable monomers.
相對於構成硬化性樹脂層31的硬化性樹脂組成物的質量100質量份,聚合性單體的含量可為10質量份~60質量份。The content of the polymerizable monomer may be 10 parts by mass to 60 parts by mass relative to 100 parts by mass of the curable resin composition constituting the
聚合起始劑為藉由加熱或紫外光等的照射而引發聚合性單體的聚合反應的化合物。例如,於聚合性單體為具有乙烯性不飽和基的化合物的情況下,聚合起始劑可為熱自由基聚合起始劑、光自由基聚合起始劑或該些的組合。The polymerization initiator is a compound that initiates the polymerization reaction of the polymerizable monomer by irradiation with heating, ultraviolet light, or the like. For example, when the polymerizable monomer is a compound having an ethylenically unsaturated group, the polymerization initiator may be a thermal radical polymerization initiator, a photo radical polymerization initiator, or a combination of these.
作為熱自由基聚合起始劑的例子,可列舉:辛醯基過氧化物、月桂醯基過氧化物、硬脂基過氧化物、苯甲醯基過氧化物等二醯基過氧化物;過氧化三甲基乙酸第三丁酯、過氧化三甲基乙酸第三己酯、1,1,3,3-四甲基丁基過氧化-2-乙基己酸酯、2,5-二甲基-2,5-雙(2-乙基己醯基過氧基)己烷、第三己基過氧化-2-乙基己酸酯、第三丁基過氧化-2-乙基己酸酯、第三丁基過氧化異丁酸酯、第三己基過氧化異丙基單碳酸酯、第三丁基過氧化-3,5,5-三甲基己酸酯、第三丁基過氧化月桂酸酯、第三丁基過氧化異丙基單碳酸酯、第三丁基過氧化-2-乙基己基單碳酸酯、第三丁基過氧化苯甲酸酯、第三己基過氧化苯甲酸酯、2,5-二甲基-2,5-雙(苯甲醯基過氧基)己烷、第三丁基過氧化乙酸酯等過氧化酯;以及2,2'-偶氮雙異丁腈、2,2'-偶氮雙(2,4-二甲基戊腈)、2,2'-偶氮雙(4-甲氧基-2'-二甲基戊腈)等偶氮化合物。Examples of thermal radical polymerization initiators include diacetin peroxides such as octyl peroxide, lauryl peroxide, stearyl peroxide, and benzyl peroxide; peroxide Tertiary butyl trimethyl acetate, tertiary hexyl peroxy trimethyl acetate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl Base-2,5-bis(2-ethylhexylperoxy)hexane, tertiary hexylperoxy-2-ethylhexanoate, tertiary butylperoxy-2-ethylhexanoate , Tertiary butyl peroxy isobutyrate, tertiary hexyl peroxide isopropyl monocarbonate, tertiary butyl peroxy-3,5,5-trimethylhexanoate, tertiary butyl peroxide Laurate, tert-butylperoxy isopropyl monocarbonate, tert-butylperoxy-2-ethylhexyl monocarbonate, tert-butylperoxybenzoate, tert-hexylperoxybenzene Peroxy esters such as formate, 2,5-dimethyl-2,5-bis(benzylperoxy)hexane, tert-butylperoxyacetate; and 2,2'-coupling Azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile) And other azo compounds.
作為光自由基聚合起始劑的例子,可列舉:2,2-二甲氧基-1,2-二苯基乙烷-1-酮等安息香縮酮;1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-[4-(2-羥基乙氧基)苯基]-2-羥基-2-甲基-1-丙烷-1-酮等α-羥基酮;以及雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、雙(2,6-二甲氧基苯甲醯基)-2,4,4-三甲基戊基氧化膦、2,4,6-三甲基苯甲醯基二苯基氧化膦等氧化膦。Examples of photoradical polymerization initiators include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexylphenyl ketone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1 -Alpha-hydroxy ketones such as ketones; and bis(2,4,6-trimethylbenzyl)phenyl phosphine oxide, bis(2,6-dimethoxybenzyl)-2,4, Phosphine oxides such as 4-trimethylpentylphosphine oxide and 2,4,6-trimethylbenzyldiphenylphosphine oxide.
該些熱自由基聚合起始劑及光自由基聚合起始劑可單獨使用一種或將兩種以上組合使用。These thermal radical polymerization initiators and photo radical polymerization initiators can be used alone or in combination of two or more.
相對於聚合性單體的總量100質量份,聚合起始劑的含量可為0.01質量份~5質量份。The content of the polymerization initiator may be 0.01 parts by mass to 5 parts by mass relative to 100 parts by mass of the total amount of polymerizable monomers.
構成硬化性樹脂層31的硬化性樹脂組成物亦可進而包含絕緣性填料、增感劑、抗氧化劑等作為其他成分。The curable resin composition constituting the
絕緣性填料出於對硬化性樹脂組成物賦予低熱膨脹性、低吸濕性的目的而添加。作為絕緣性填料的例子,可列舉:二氧化矽(silica)、氧化鋁(alumina)、氮化硼、二氧化鈦(titania)、玻璃(glass)、陶瓷(ceramic)等非金屬無機填料。該些絕緣性填料可單獨使用一種或將兩種以上組合使用。The insulating filler is added for the purpose of imparting low thermal expansion and low hygroscopicity to the curable resin composition. Examples of insulating fillers include non-metallic inorganic fillers such as silicon dioxide (silica), alumina (alumina), boron nitride, titanium dioxide (titania), glass (glass), and ceramic (ceramic). These insulating fillers can be used alone or in combination of two or more.
相對於構成硬化性樹脂層31的硬化性樹脂組成物的總質量100質量份,絕緣性填料的含量可為5質量份~20質量份。若絕緣性填料的含量處於所述數值範圍內,則有已硬化的硬化性樹脂層31c具有優異的耐熱性及良好的剝離性的傾向。The content of the insulating filler may be 5 parts by mass to 20 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the
作為增感劑的例子,可列舉:蒽、菲、1,2-苯並菲(chrysene)、苯並芘(benzopyrene)、1,2-苯並苊(fluoranthene)、紅螢烯、芘、氧雜蒽酮(xanthone)、陰丹士林、噻噸-9-酮、2-異丙基-9H-噻噸-9-酮、4-異丙基-9H-噻噸-9-酮、及1-氯-4-丙氧基硫雜蒽酮。相對於構成硬化性樹脂層31的硬化性樹脂組成物的總質量100質量份,增感劑的含量可為0.01質量份~10質量份。Examples of sensitizers include: anthracene, phenanthrene, 1,2-benzopyrene (chrysene), benzopyrene (benzopyrene), 1,2-benzopyrene (fluoranthene), fluorene, pyrene, oxygen Xanthone, indanthrene, thioxanthone-9-one, 2-isopropyl-9H-thioxanthone-9-one, 4-isopropyl-9H-thioxanthone-9-one, and 1-chloro-4-propoxy thioxanthone. The content of the sensitizer may be 0.01 parts by mass to 10 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the
作為抗氧化劑的例子,可列舉苯醌、氫醌等醌衍生物;4-甲氧基苯酚、4-第三丁基兒茶酚等酚衍生物;2,2,6,6-四甲基哌啶-1-氧基、4-羥基-2,2,6,6-四甲基哌啶-1-氧基等胺基氧基衍生物;以及甲基丙烯酸四甲基哌啶酯等受阻胺衍生物。相對於構成硬化性樹脂層31的硬化性樹脂組成物的總質量100質量份,抗氧化劑的含量可為0.1質量份~10質量份。Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone; phenol derivatives such as 4-methoxyphenol and 4-tert-butylcatechol; 2,2,6,6-tetramethyl Aminooxy derivatives such as piperidine-1-oxy and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxy; and hindered such as tetramethylpiperidine methacrylate Amine derivatives. The content of the antioxidant may be 0.1 to 10 parts by mass relative to 100 parts by mass of the total mass of the curable resin composition constituting the
硬化性樹脂層31例如藉由預先準備具有支撐膜及形成於支撐膜上的硬化性樹脂層的積層膜並將其貼附於光吸收層32,而設置於光吸收層32上。積層膜向光吸收層32的貼附可使用輥層壓機、真空層壓機等於室溫(20℃)下進行或一面加熱一面進行。具有支撐膜及硬化性樹脂層的積層膜例如可藉由以下方法而獲得,所述方法包含:將包含熱硬化性樹脂或聚合性單體、有機溶劑、及視需要的其他成分的樹脂清漆塗佈於支撐膜;以及自塗膜去除有機溶劑。或者,亦可藉由將同樣的樹脂清漆直接塗佈於光吸收層32並將有機溶劑自塗膜去除的方法,而於光吸收層32上形成硬化性樹脂層31。The
光吸收層32的一例為包含吸收光而產生熱的導電體的導電體層。構成作為光吸收層32的導電體層的導電體的例子可列舉金屬、金屬氧化物、及導電性碳材料。金屬可為鉻、銅、鈦、銀、鉑、金等單體金屬,亦可為鎳-鉻、不鏽鋼、銅-鋅等合金。作為金屬氧化物的例子,可列舉氧化銦錫(Indium Tin Oxide,ITO)、氧化鋅、及氧化鈮。該些可單獨使用一種或將兩種以上組合使用。導電體可為鉻、鈦、或導電性碳材料。An example of the
光吸收層32可為包含單層或多層的金屬層。金屬層容易具有相對於非相干光的3.1%以下的透過率。例如,光吸收層32可為包含銅層及鈦層的金屬層。作為光吸收層32的金屬層可為藉由真空蒸鍍及濺鍍等物理氣相沈積(physical vapor deposition,PVD)、電漿化學蒸鍍等化學氣相沈積(chemical vapor deposition,CVD)而形成的層,亦可為藉由電解鍍敷或無電解鍍敷而形成的鍍敷層。根據物理氣相沈積,即使支撐構件10具有大面積,亦可有效率地形成覆蓋支撐構件10的表面的作為光吸收層32的金屬層。The
於光吸收層32為單層的金屬層的情況下,光吸收層32可包含選自由鉈(Tl)、鉑(Pt)、鎳(Ni)、鈦(Ti)、鎢(W)、鉻(Cr)、銅(Cu)、鋁(Al)、銀(Ag)及金(Au)所組成的群組中的至少一種金屬。In the case where the
光吸收層32亦可包含第一層及第二層此兩層,自支撐構件10側起以第一層及第二層的順序積層。於該情況下,例如若第一層具有高光吸收性且第二層具有高熱膨脹係數及高彈性係數,則容易獲得特別良好的剝離性。就所述觀點而言,例如,第一層可包含選自由鉈(Tl)、鉑(Pt)、鎳(Ni)、鈦(Ti)、鎢(W)及鉻(Cr)所組成的群組中的至少一種金屬,第二層可包含選自由銅(Cu)、鋁(Al)、銀(Ag)及金(Au)所組成的群組中的至少一種金屬。第一層亦可包含選自由鈦(Ti)、鎢(W)及鉻(Cr)所組成的群組中的至少一種金屬,第二層亦可包含選自由銅(Cu)及鋁(Al)所組成的群組中的至少一種金屬。The
光吸收層的其他例子為含有吸收光而產生熱的導電性粒子、及分散有導電性粒子的黏合劑樹脂的層。導電性粒子可為包含所述導電體的粒子。黏合劑樹脂可為硬化性樹脂組成物,於該情況下,光吸收層構成硬化性樹脂層31的一部分。例如,圖1(b)的暫時固定用積層體1的光吸收層31B可為包含導電性粒子及硬化性樹脂組成物的層。構成光吸收層的硬化性樹脂組成物可包含與構成光吸收層以外的部分的硬化性樹脂層的硬化性樹脂組成物同樣的成分。構成光吸收層的硬化性樹脂組成物可與構成光吸收層以外的部分的硬化性樹脂層的硬化性樹脂組成物相同,亦可不同。相對於光吸收層的導電性粒子以外的成分的總量、即黏合劑樹脂或硬化性樹脂組成物的質量100質量份,光吸收層的導電性粒子的含量可為10質量份~90質量份。若導電性粒子的含量大,則光吸收層容易具有相對於非相干光的3.1%以下的透過率。就透過率的觀點而言,導電性粒子的含量亦可為20質量%以上、或30質量%以上。Another example of the light-absorbing layer is a layer containing conductive particles that absorb light and generate heat, and a binder resin in which conductive particles are dispersed. The conductive particles may be particles containing the above-mentioned conductor. The binder resin may be a curable resin composition, and in this case, the light absorption layer constitutes a part of the
包含導電性粒子及黏合劑樹脂的光吸收層例如可藉由以下方法而形成,所述方法包含:將含有導電性粒子、黏合劑樹脂及有機溶劑的清漆塗佈於支撐構件上或硬化性樹脂層上;以及自塗膜去除有機溶劑。可將預先製作的光吸收層32積層於支撐構件10上或硬化性樹脂層上。亦可將包含光吸收層及硬化性樹脂層的積層體積層於支撐構件上。The light-absorbing layer containing conductive particles and a binder resin can be formed, for example, by a method including: applying a varnish containing conductive particles, a binder resin, and an organic solvent on a support member or a curable resin Layer; and remove organic solvent from the coating film. The
就輕剝離性的觀點而言,光吸收層32的厚度可為1 nm~5000 nm或100 nm~3000 nm。另外,若光吸收層32的厚度為50 nm~300 nm,則光吸收層32容易具有充分低的透過率。於光吸收層32為包含單層或多層的金屬層的情況下,就良好的剝離性的觀點而言,光吸收層32(或金屬層)的厚度可為75 nm以上、90 nm以上、或100 nm以上,且可為1000 nm以下。尤其是於光吸收層32為單層的金屬層的情況下,就良好的剝離性的觀點而言,光吸收層32(或金屬層)的厚度可為100 nm以上、125 nm以上、150 nm以上或200 nm以上,且可為1000 nm以下。即使光吸收層32為包含光吸收性比較低的金屬(例如,Cu、Ni)的金屬層、或包含熱膨脹係數比較低的金屬(例如,Ti)的金屬層,若其厚度大,則亦有容易獲得更良好的剝離性的傾向。From the viewpoint of light peelability, the thickness of the
就應力緩和的觀點而言,暫時固定材層30的厚度(圖1(a)的情況下,光吸收層32與硬化性樹脂層31的合計厚度)可為0.1 μm~2000 μm或10 μm~500 μm。From the viewpoint of stress relaxation, the thickness of the temporary fixing material layer 30 (in the case of FIG. 1(a), the total thickness of the
準備暫時固定用積層體1後,如圖3(a)所示般於硬化性樹脂層31上載置加工前的半導體構件45。半導體構件45具有半導體基板40及再配線層41。半導體構件45亦可進而具有外部連接端子。半導體基板40可為半導體晶圓、或將半導體晶圓分割而得的半導體晶片。圖3(a)的例子中,將多個半導體構件45載置於硬化性樹脂層31,但半導體構件的數量亦可為一個。After preparing the
就半導體裝置的小型化、薄型化以及抑制搬送時、加工步驟等時的破裂的觀點而言,半導體構件45的厚度可為1 μm~1000 μm、10 μm~500 μm或20 μm~200 μm。From the viewpoints of miniaturization and thinning of the semiconductor device, and suppression of cracks during transportation, processing steps, etc., the thickness of the
載置於硬化性樹脂層31上的半導體構件45例如使用真空壓製機或真空層壓機被壓接於硬化性樹脂層31。於使用真空壓製機的情況下,壓接條件可為氣壓1 hPa以下、壓接壓力1 MPa、壓接溫度120℃~200℃、及保持時間100秒鐘~300秒鐘。於使用真空層壓機的情況下,壓接條件例如可為氣壓1 hPa以下、壓接溫度60℃~180℃或80℃~150℃、層壓壓力0.01 MPa~0.5 MPa或0.1 MPa~0.5 MPa、保持時間1秒鐘~600秒鐘或30秒鐘~300秒鐘。The
於硬化性樹脂層31上配置半導體構件45後,使硬化性樹脂層31熱硬化或光硬化,藉此經由具有已硬化的硬化性樹脂層31c的暫時固定材層30,將半導體構件45暫時固定於支撐構件10。熱硬化的條件例如可為300℃以下或100℃~200℃、且1分鐘~180分鐘或1分鐘~60分鐘。After arranging the
接著,如圖4(a)所示般,對暫時固定於支撐構件10的半導體構件進行加工。圖4(a)表示包含半導體基板的薄化的加工的例子。半導體構件的加工並不限定於此,例如可包含半導體基板的薄化、半導體構件的分割(切割)、貫通電極的形成、蝕刻處理、鍍敷回焊處理、濺鍍處理、或該些的組合。Next, as shown in FIG. 4( a ), the semiconductor member temporarily fixed to the
半導體基板40的薄化可藉由使用研磨機等對半導體基板40的與再配線層41為相反側的面進行研削來進行。經薄化的半導體基板40的厚度例如可為100 μm以下。The thinning of the
對半導體構件45進行加工後,如圖4(b)所示般形成對經加工的半導體構件45進行密封的密封層50。密封層50可使用通常用於製造半導體元件的密封材來形成。例如,可藉由熱硬化性樹脂組成物來形成密封層50。密封層50所使用的熱硬化性樹脂組成物例如包含甲酚酚醛清漆環氧樹脂、苯酚酚醛清漆環氧樹脂、聯苯二環氧樹脂、萘酚酚醛清漆環氧樹脂等環氧樹脂。密封層50、及用於形成其的熱硬化性樹脂組成物可包含填料及/或阻燃劑等添加劑。After the
密封層50例如使用固形材、液狀材、細顆粒材、或密封膜來形成。於使用密封膜的情況下,可使用壓縮密封成形機、真空層壓裝置等。例如,使用該些裝置,於40℃~180℃(或60℃~150℃)、0.1 MPa~10 MPa(或0.5 MPa~8 MPa)、且0.5分鐘~10分鐘的條件下利用經熱熔融的密封膜被覆半導體構件45,藉此可形成密封層50。密封膜的厚度是以密封層50成為加工後的半導體構件45的厚度以上的方式進行調整。密封膜的厚度可為50 μm~2000 μm、70 μm~1500 μm、或100 μm~1000 μm。The
形成密封層50後,可如圖5(a)所示般將密封層50及硬化性樹脂層31c分割成各包含一個半導體構件45的多個部分。After the
如圖5(b)所示般,對暫時固定用積層體1自支撐構件10側照射非相干光A,藉此將半導體構件45自支撐構件10分離。藉由照射非相干光A,光吸收層32吸收光而瞬間產生熱。藉由所產生的熱,例如可產生已硬化的硬化性樹脂層31c的熔融、產生於支撐構件10與半導體構件45之間的熱應力、及光吸收層32的飛散。以該些現象中的一個或兩個以上為主要原因,半導體構件45可容易地自支撐構件10分離。若構成硬化性樹脂層31的硬化性樹脂組成物包含烴樹脂,且已硬化的硬化性樹脂層於25℃下的儲存彈性係數為5 MPa~100 MPa,則有容易引起光吸收層32與已硬化的硬化性樹脂層31於界面處剝離的傾向。於非相干光A的能量為5 J/cm2
~25 J/cm2
的範圍的情況下,該傾向尤其顯著。為了將半導體構件45自支撐構件10分離,亦可於照射非相干光A的同時,對半導體構件45稍微施加應力。As shown in FIG. 5( b ), the
非相干光A為不相干的光,且為具有不會產生干涉條紋、可干涉性低、指向性低等性質的電磁波。非相干光有光程長越長而越衰減的傾向。雷射光一般為相干光,相對於此,太陽光、螢光燈的光等光為非相干光。非相干光亦可稱為除雷射光以外的光。非相干光的照射面積一般遠遠寬於相干光(即,雷射光),因此可減少照射次數。例如藉由一次照射便可產生多個半導體構件45的分離。Incoherent light A is incoherent light and is an electromagnetic wave having properties such as no interference fringes, low interferability, and low directivity. Incoherent light tends to attenuate as the optical path length is longer. Laser light is generally coherent light. In contrast, light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be called light other than laser light. The irradiation area of incoherent light is generally much wider than that of coherent light (ie, laser light), so the number of irradiations can be reduced. For example, a plurality of
非相干光A可包含紅外線。非相干光A亦可為脈衝光。非相干光A的光源並無特別限制,可為氙燈。氙燈是利用封入有氙氣的發光管的藉由施加、放電而產生的發光的燈。氙燈一面反覆進行電離及激發一面進行放電,因此穩定地具有紫外光區域至紅外光區域的連續波長。與金屬鹵化物燈等燈相比較,氙燈的啟動所需的時間短,因此可大幅縮短步驟所用的時間。另外,於發光時需要施加高電壓,因此會瞬間產生高熱,但冷卻時間短,可進行連續的作業,就該方面而言,氙燈亦有利。The incoherent light A may include infrared rays. The incoherent light A may also be pulsed light. The light source of the incoherent light A is not particularly limited, and may be a xenon lamp. The xenon lamp is a lamp that emits light by applying and discharging using an arc tube enclosed with xenon gas. The xenon lamp repeatedly ionizes and excites while discharging, so it stably has a continuous wavelength from the ultraviolet region to the infrared region. Compared with lamps such as metal halide lamps, xenon lamps require less time to start, so the time required for the steps can be greatly reduced. In addition, high voltage needs to be applied during light emission, so high heat is generated instantaneously, but the cooling time is short and continuous operation is possible. In this respect, the xenon lamp is also advantageous.
氙燈的照射條件包含施加電壓、脈衝寬度、照射時間、照射距離(光源與暫時固定材層的距離)、照射能量等,可根據照射次數等對該些進行任意設定。就減少半導體構件45的損傷的觀點而言,可設定藉由一次照射便可分離半導體構件45的照射條件。The irradiation conditions of the xenon lamp include applied voltage, pulse width, irradiation time, irradiation distance (the distance between the light source and the temporarily fixed material layer), irradiation energy, etc., which can be arbitrarily set according to the number of irradiations. From the viewpoint of reducing damage to the
於已分離的半導體構件45上,有時硬化性樹脂層31c的一部分作為殘渣31c'而附著。如圖5(c)所示般,所附著的殘渣31c'將被去除。殘渣31c'例如藉由利用溶劑進行清洗而去除。作為溶劑,並無特別限制,可列舉:乙醇、甲醇、甲苯、二甲苯、丙酮、甲基乙基酮、甲基異丁基酮、己烷等。該些可單獨使用一種或將兩種以上組合使用。為了去除殘渣31c',可使半導體構件45浸漬於溶劑,亦可進行超音波清洗。亦可於100℃以下左右的低溫下對半導體構件45進行加熱。On the separated
藉由以上所例示的方法,可獲得包括經加工的半導體構件45的半導體元件60。可藉由將所獲得的半導體元件60連接於其他半導體元件或半導體元件搭載用基板而製造半導體裝置。
[實施例]By the method exemplified above, the
以下,列舉實施例來對本發明進行更具體的說明。其中,本發明並不限定於該些實施例。Hereinafter, examples are given to explain the present invention more specifically. However, the present invention is not limited to these embodiments.
(研究1) 1-1.硬化性樹脂層 將氫化苯乙烯-丁二烯彈性體(商品名:達那龍(Dynaron)2324P,JSR股份有限公司)溶解於甲苯,製備濃度40質量%的彈性體溶液。將80質量份的包含氫化苯乙烯-丁二烯彈性體的彈性體溶液、1,9-壬二醇二丙烯酸酯(商品名:FA-129AS,日立化成股份有限公司)20質量份、及過氧化酯(商品名:帕海薩(Perhexa)25O,日油股份有限公司)1質量份混合,獲得樹脂清漆。(Study 1) 1-1. Curable resin layer The hydrogenated styrene-butadiene elastomer (trade name: Dynaron 2324P, JSR Co., Ltd.) was dissolved in toluene to prepare an elastomer solution with a concentration of 40% by mass. 80 parts by mass of the elastomer solution containing hydrogenated styrene-butadiene elastomer, 20 parts by mass of 1,9-nonanediol diacrylate (trade name: FA-129AS, Hitachi Chemical Co., Ltd.), and One part by mass of oxidized ester (trade name: Perhexa 25O, NOF Corporation) was mixed to obtain a resin varnish.
使用精密塗敷機,將所獲得的樹脂清漆塗敷於聚對苯二甲酸乙二酯(PET)膜(皮尤萊斯(Purex)A31,帝人杜邦膜(Teijin Dupont Film)股份有限公司,厚度:38 μm)的脫模處理面上。將塗膜藉由於80℃下加熱10分鐘而加以乾燥,從而形成厚度約100 μm的硬化性樹脂層。Using a precision coater, the obtained resin varnish was applied to a polyethylene terephthalate (PET) film (Purex A31, Teijin Dupont Film Co., Ltd., thickness : 38 μm) on the demolding surface. The coating film was dried by heating at 80°C for 10 minutes to form a curable resin layer with a thickness of about 100 μm.
1-2.光吸收層 作為支撐構件,準備具有40 mm×40 mm的尺寸的載玻片、毛玻璃板、及矽晶圓。於各支撐構件上,藉由濺鍍依序形成鈦層、銅層,從而形成包含鈦層(厚度:20 nm)/銅層(厚度:200 nm)此兩層的光吸收層。於濺鍍中,於利用逆濺鍍進行預處理後,藉由射頻(radio frequency,RF)濺鍍來形成鈦層及銅層。逆濺鍍(預處理)及RF濺鍍的條件如以下所述。 逆濺鍍(預處理) ·Ar流速:1.2×10-2 Pa·m3 /s(70 sccm) ·RF功率:300 W ·時間:300秒鐘 RF濺鍍 ·Ar流速:1.2×10-2 Pa·m3 /s(70 sccm)1-2. The light absorbing layer is used as a supporting member, and a glass slide, a ground glass plate, and a silicon wafer with a size of 40 mm×40 mm are prepared. On each support member, a titanium layer and a copper layer are sequentially formed by sputtering, thereby forming a light absorbing layer including two layers of titanium layer (thickness: 20 nm) and copper layer (thickness: 200 nm). In sputtering, after pretreatment by reverse sputtering, a titanium layer and a copper layer are formed by radio frequency (RF) sputtering. The conditions of reverse sputtering (pretreatment) and RF sputtering are as follows. Reverse sputtering (pretreatment) ·Ar flow rate: 1.2×10 -2 Pa·m 3 /s (70 sccm) ·RF power: 300 W ·Time: 300 seconds RF sputtering ·Ar flow rate: 1.2×10 -2 Pa·m 3 /s (70 sccm)
1-3.透過率 測定支撐構件及光吸收層相對於自氙燈照射的光的透過率。可將光吸收層的透過率實質上視為暫時固定材層的透過率。透過率使用與後述剝離試驗中使用的氙燈相同的氙燈、及分光放射光度計(USR-45,牛尾(Ushio)電機股份有限公司)來測定。將分光放射光度計的檢測端子設置於距氙燈的光照射部5 cm的距離的位置。藉由檢測端子直接檢測自氙燈照射的光,將檢測出的光的光量設為基線。繼而,於分光放射光度計的檢測端子與氙燈之間設置測定對象物,利用檢測端子檢測自氙燈照射並透過測定對象物的透過光。將檢測出的透過光的光量相對於基線的比例設為透過率。藉由以下式子計算與波長300 nm~800 nm的範圍的光的合計光量相關的透過率。 透過率(%)={(透過光的波長300 nm~800 nm下的總光量)/(基線的波長300 nm~800 nm下的總光量)}×100 關於光吸收層,藉由來自配置於支撐構件側的氙燈的光測定具有支撐構件及光吸收層的積層體的透過率。根據基線及支撐構件的透過率算出入射至光吸收層的光的光量,將相對於該光量的透過光的光量的比例設為光吸收層的透過率。1-3. Transmittance The transmittance of the support member and the light absorption layer with respect to the light irradiated from the xenon lamp was measured. The transmittance of the light absorbing layer can be regarded as substantially the transmittance of the temporary fixing material layer. The transmittance was measured using the same xenon lamp and spectroradiometer (USR-45, Ushio Electric Co., Ltd.) as the xenon lamp used in the peel test described later. The detection terminal of the spectroradiometer was set at a distance of 5 cm from the light irradiation part of the xenon lamp. The detection terminal directly detects the light irradiated from the xenon lamp, and the amount of the detected light is set as the baseline. Then, the object to be measured is placed between the detection terminal of the spectroradiometer and the xenon lamp, and the detection terminal detects the transmitted light irradiated from the xenon lamp and transmitted through the object to be measured. The ratio of the detected amount of transmitted light to the baseline is defined as the transmittance. The transmittance related to the total amount of light in the wavelength range of 300 nm to 800 nm is calculated by the following formula. Transmittance (%)={(total light quantity under the wavelength of transmitted light 300 nm~800 nm)/(total light quantity under the wavelength of base line 300 nm~800 nm)}×100 Regarding the light-absorbing layer, the transmittance of the laminate having the supporting member and the light-absorbing layer was measured by light from a xenon lamp arranged on the supporting member side. The light quantity of light incident on the light-absorbing layer is calculated from the base line and the transmittance of the support member, and the ratio of the light quantity of the transmitted light to the light quantity is defined as the transmittance of the light-absorbing layer.
1-4.剝離試驗 將切出為40 mm×40 mm的尺寸的硬化性樹脂層配置於各支撐構件上所形成的光吸收層上。藉由真空層壓使硬化性樹脂層密接於光吸收層,從而獲得具有支撐構件/光吸收層/硬化性樹脂層的積層構成的暫時固定用積層體。於暫時固定用積層體的硬化性樹脂層上,配置半導體晶片(尺寸:10 mm×10 mm、厚度:150 μm)。藉由於180℃下加熱一小時使硬化性樹脂層硬化,從而獲得具有暫時固定於支撐構件的半導體晶片的剝離試驗用試驗體。1-4. Peel test A curable resin layer cut out to a size of 40 mm×40 mm was arranged on the light absorption layer formed on each support member. The curable resin layer is brought into close contact with the light absorption layer by vacuum lamination to obtain a laminated body for temporary fixation having a laminate structure of a supporting member/light absorption layer/curable resin layer. Place a semiconductor wafer (size: 10 mm×10 mm, thickness: 150 μm) on the curable resin layer of the laminated body for temporary fixation. By heating at 180°C for one hour to harden the curable resin layer, a test body for peeling test having a semiconductor wafer temporarily fixed to the support member was obtained.
對各試驗體,自暫時固定用積層體的支撐構件側利用氙燈照射脈衝光。光的照射條件為如下所述。作為氙燈,使用氙氣(Xenon)公司製造的S2300。該裝置的波長範圍為270 nm~近紅外區域。照射距離為光源即氙燈與支撐構件之間的距離。 ·施加電壓:3700 V ·脈衝寬度:200 μs ·照射距離:50 mm ·照射次數:1次 ·照射時間:200 μs 利用氙燈進行光照射後,觀察試驗體的狀態,利用以下基準評價剝離性。於表1中示出評價結果。 A:半導體晶片僅藉由光照射便自然地自暫時固定用積層體剝離、或藉由於半導體晶片與硬化性樹脂層之間插入鑷子而半導體晶片於不發生破損的情況下自暫時固定用積層體剝離。 B:即使於半導體晶片與硬化性樹脂層之間插入鑷子,亦未將半導體晶片自暫時固定用積層體剝離。For each test body, pulsed light was irradiated with a xenon lamp from the supporting member side of the laminated body for temporary fixation. The light irradiation conditions are as follows. As the xenon lamp, S2300 manufactured by Xenon Corporation was used. The wavelength range of the device is from 270 nm to the near infrared region. The irradiation distance is the distance between the light source, that is, the xenon lamp and the supporting member. ·Applied voltage: 3700 V ·Pulse width: 200 μs ·Illumination distance: 50 mm ·Number of exposures: 1 time · Irradiation time: 200 μs After light irradiation with a xenon lamp, the state of the test body was observed, and the peelability was evaluated using the following criteria. Table 1 shows the evaluation results. A: The semiconductor wafer is naturally peeled from the laminated body for temporary fixation only by light irradiation, or the semiconductor wafer is automatically peeled from the laminated body for temporary fixation without damage by inserting tweezers between the semiconductor wafer and the curable resin layer Peel off. B: Even if tweezers were inserted between the semiconductor wafer and the curable resin layer, the semiconductor wafer was not peeled from the laminated body for temporary fixation.
[表1]
(研究2)
如表2所示般變更構成光吸收層的銅層、鈦層的厚度,除此以外,以與「研究1」同樣的程序,製作具有載玻片作為支撐構件的試驗體。比較例3中未設置光吸收層而在支撐構件上直接積層了硬化性樹脂層。在比較例4中,僅形成鈦層作為光吸收層。利用與「研究1」同樣的剝離試驗評價所得的試驗體的剝離性。利用與「研究1」同樣的方法測定光吸收層的透過率。將評價結果示於表2中。(Study 2)
Except for changing the thickness of the copper layer and the titanium layer constituting the light absorption layer as shown in Table 2, the same procedure as in "
[表2]
(研究3)
於作為支撐構件的厚度1300 μm的載玻片上,藉由濺鍍而形成表3中所示的包含單層或兩層的金屬層的光吸收層。表中,光吸收層的構成以自載玻片側起的積層順序來表示,例如,「Ti(50)/Cu(200)」是指自載玻片側起依序積層有厚度50 nm的鈦層、厚度200 nm的銅層。實施例1、實施例3及實施例4與研究2的實施例1、實施例3及實施例4相同。於光吸收層上,以與「研究1」相同的程序,製作具有支撐構件/光吸收層/硬化性樹脂層的積層構成的暫時固定用積層體。進而,以與「研究1」同樣的程序,製作具有暫時固定於支撐構件的半導體晶片的剝離試驗用試驗體。利用與「研究1」同樣的方法,測定光吸收層的透過率。(Study 3)
On a glass slide having a thickness of 1300 μm as a supporting member, a light absorbing layer including a single-layer or two-layer metal layer shown in Table 3 was formed by sputtering. In the table, the composition of the light-absorbing layer is shown in the order of stacking from the side of the glass slide. For example, "Ti(50)/Cu(200)" means that a titanium layer with a thickness of 50 nm is sequentially stacked from the side of the glass slide. , 200 nm thick copper layer. Example 1, Example 3, and Example 4 are the same as Example 1, Example 3, and Example 4 of Study 2. On the light-absorbing layer, a laminated body for temporary fixation having a laminated structure of a supporting member/light-absorbing layer/curable resin layer was produced in the same procedure as in "
對所準備的各試驗體,自暫時固定用積層體的支撐構件側利用氙燈照射脈衝光。光的照射條件為如下所述。作為具有氙燈的照射裝置,使用諾威桑科斯(Novacentrix)公司製造的帕斯佛戈(PulseForge)1300。照射距離為光源即氙燈與支撐構件之間的距離。使脈衝寬度自150 μs起逐次增加10 μs,記錄半導體晶片僅藉由光照射便自暫時固定用積層體自然地剝離時的脈衝寬度的最小值。脈衝光的照射是一面更換試驗體一面進行,將對各別的試驗體的照射次數設為一次。將半導體晶片剝離時的脈衝寬度的最小值示於表3中。 ·施加電壓:800 V ·脈衝寬度:150 μs~700 μs ·照射距離:6 mm ·照射次數:1次 基於半導體晶片剝離時的脈衝寬度的最小值,藉由以下基準評價剝離性。 AAA:150 μs AA:160 μs以上且未滿350 μs A:350 μs以上且700 μs以下、或藉由光吸收層的溶解而剝離(A:溶解(Melt)) B:於700 μs以下不可剝離For each prepared test body, pulsed light was irradiated with a xenon lamp from the support member side of the laminated body for temporary fixation. The light irradiation conditions are as follows. As an irradiation device having a xenon lamp, a PulseForge 1300 manufactured by Novacentrix was used. The irradiation distance is the distance between the light source, that is, the xenon lamp and the supporting member. The pulse width was gradually increased by 10 μs from 150 μs, and the minimum value of the pulse width when the semiconductor wafer was naturally peeled off from the laminated body for temporary fixation by only light irradiation was recorded. The pulse light irradiation was performed while replacing the test body, and the number of times of irradiation to each test body was set to one. Table 3 shows the minimum value of the pulse width when the semiconductor wafer is peeled off. ·Applied voltage: 800 V ·Pulse width: 150 μs~700 μs ·Illumination distance: 6 mm ·Number of exposures: 1 time Based on the minimum value of the pulse width when the semiconductor wafer was peeled off, the peelability was evaluated based on the following criteria. AAA: 150 μs AA: 160 μs or more and less than 350 μs A: 350 μs or more and 700 μs or less, or peeling off by the dissolution of the light-absorbing layer (A: Melt) B: Not peelable under 700 μs
[表3]
根據研究1、研究2、及研究3的結果,可確認到藉由使用包含透過率90%以上的支撐構件與透過率3.1%以下的光吸收層的組合的暫時固定用積層體,於將半導體構件暫時固定之後,可藉由來自氙燈的非相干光的照射而容易地將半導體構件自支撐構件分離。According to the results of
1:暫時固定用積層體
3:光吸收積層體
10:支撐構件
30:暫時固定材層
31、31A:硬化性樹脂層
31B、32:光吸收層
31c:已硬化的硬化性樹脂層
31c':殘渣
40:半導體基板
41:再配線層
45:半導體構件
50:密封層
60:半導體元件
A:非相干光
S:暫時固定材層的最表面(最表面)
1: Laminated body for temporary fixation
3: Light-absorbing laminate
10: Supporting member
30: Temporarily fix the
圖1(a)、圖1(b)及圖1(c)是表示製造半導體裝置的方法的一實施形態的示意圖。 圖2是表示光吸收積層體的一實施形態的示意圖。 圖3(a)及圖3(b)是表示製造半導體裝置的方法的一實施形態的示意圖。 圖4(a)及圖4(b)是表示製造半導體裝置的方法的一實施形態的示意圖。 圖5(a)、圖5(b)及圖5(c)是表示製造半導體裝置的方法的一實施形態的示意圖。1(a), 1(b), and 1(c) are schematic diagrams showing an embodiment of a method of manufacturing a semiconductor device. Fig. 2 is a schematic diagram showing an embodiment of a light-absorbing laminate. 3(a) and 3(b) are schematic diagrams showing an embodiment of a method of manufacturing a semiconductor device. 4(a) and 4(b) are schematic diagrams showing an embodiment of a method of manufacturing a semiconductor device. 5(a), 5(b), and 5(c) are schematic diagrams showing an embodiment of a method of manufacturing a semiconductor device.
1:暫時固定用積層體 1: Laminated body for temporary fixation
10:支撐構件 10: Supporting member
30:暫時固定材層 30: Temporarily fix the material layer
31、31A:硬化性樹脂層 31, 31A: Curable resin layer
31B、32:光吸收層 31B, 32: Light absorption layer
S:暫時固定材層的最表面(最表面) S: Temporarily fix the top surface (top surface) of the material layer
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