TW202038300A - Semiconductor device manufacturing method and layered film for temporary fixing material - Google Patents

Abstract

Disclosed is a semiconductor device manufacturing method comprising: a preparation step for preparing a layered body formed by layering, in the order given, a support member, an insulation layer, a temporary fixing material layer that absorbs light and thereby generates heat, and a semiconductor member; and a separating step for, in the layered body, separating the semiconductor member from the support member by projecting light onto the temporary fixing material layer.

Description

Manufacturing method of semiconductor device and laminated film for temporary fixing material

The present invention relates to a method of manufacturing a semiconductor device and a laminated film for temporary fixing material.

In the field of semiconductor devices, in recent years, technologies related to packaging called System in Package (SIP) formed by laminating a plurality of semiconductor elements have developed significantly. In the SIP type package, in order to laminate a plurality of semiconductor elements, the thickness of the semiconductor elements is required to be thin. According to this requirement, in semiconductor elements, after the integrated circuit is incorporated into a semiconductor member (for example, a semiconductor wafer), for example, the back surface of the semiconductor member is ground and the semiconductor wafer is diced. Processing and other processing. Regarding the processing of these semiconductor members, it is usually performed by temporarily fixing the semiconductor member to the supporting member using a temporary fixing material layer (for example, refer to Patent Document 1 to Patent Document 3).

The processed semiconductor member is firmly fixed to the support member via the temporary fixing material layer. Therefore, in the manufacturing method of a semiconductor device, it is required that the semiconductor member can be prevented from being damaged, etc., and the processed semiconductor member can be separated from the supporting member. In Patent Document 1, as a method of separating such a semiconductor member, a method of physically separating the temporary fixing material layer while heating one side is disclosed. In addition, Patent Document 2 and Patent Document 3 disclose a method of separating semiconductor members by irradiating a temporarily fixed material layer with laser light (coherent light). [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2012-126803 [Patent Document 2] Japanese Patent Laid-Open No. 2016-138182 [Patent Document 3] Japanese Patent Laid-Open No. 2013-033814

[The problem to be solved by the invention] However, in the method disclosed in Patent Document 1, there is a problem that the semiconductor wafer is damaged due to thermal history and the yield is reduced. On the other hand, in the methods disclosed in Patent Document 2 and Patent Document 3, there is a problem that the irradiation area of the laser light is narrow and the entire semiconductor member is repeatedly irradiated multiple times, which takes time; and the focus of the laser light is controlled. For scanning and irradiation, the steps become complicated; and expensive devices are required.

The present invention is made in view of the actual situation, and its purpose is to provide a method that can easily separate a temporarily fixed semiconductor member from a supporting member, and can reduce the need for separating the temporarily fixed semiconductor member from a supporting member. A method of manufacturing a semiconductor device that irradiates energy. In addition, an object of the present invention is to provide a laminated film for a temporary fixing material that can be effectively used as a temporary fixing material.

[Means to solve the problem] The inventors of the present invention conducted diligent studies and found that by providing a heat insulating layer between the support member and the temporary fixing material layer that absorbs light and generates heat, it is possible to reduce the cost of separating the temporarily fixed semiconductor member from the supporting member. The irradiation energy required to complete the present invention.

An aspect of the present invention provides a method of manufacturing a semiconductor device, including: a preparation step of preparing a laminated body in which a support member, a heat insulating layer, a temporary fixing material layer that absorbs light and generates heat, and a semiconductor member are sequentially laminated; and a separation step , The temporary fixing material layer in the laminate is irradiated with light to separate the semiconductor member from the supporting member. The reason why a heat insulating layer is provided between the support member and the temporary fixing material layer that absorbs light and generates heat can reduce the applied voltage required when separating the temporarily fixed semiconductor member from the support member. However, the present inventors It is believed by others that this suppresses the heat diffusion from the temporary fixing material layer to the support member and promotes the temperature rise of the temporary fixing material layer.

The temporary fixing material layer may have a light absorption layer that absorbs light and generates heat, and a cured resin layer containing a cured product of a curable resin component. In this case, the laminated body may be a laminated body in which a support member, a heat insulating layer, a light absorption layer, a cured resin layer, and a semiconductor member are sequentially laminated.

The light source of the light in the separation step may be a xenon lamp. The light in the separation step may be light containing at least infrared light.

The separation step may be a step of irradiating the temporary fixing material layer with light via the supporting member.

Another aspect of the present invention provides a laminated film for temporary fixing material for temporarily fixing a semiconductor member to a supporting member.

One aspect of this laminated film for temporary fixing materials is a laminated film having a heat insulating layer (for example, a heat insulating layer of a cured product containing a curable resin component) and a light absorbing layer that absorbs light and generates heat. This laminated film may have any one of the following structure (A), structure (B), or structure (C), for example. In addition, the resin layer is a layer containing a curable resin component. Composition (A): Thermal insulation layer/light absorption layer/resin layer Composition (B): support member/heat insulation layer/light absorption layer/resin layer Composition (C): Supporting member/Insulation layer/Light absorption layer

Another aspect of the laminated film for temporary fixing materials is a laminated film having a heat-insulating resin layer containing a curable resin component and a light-absorbing layer that absorbs light and generates heat. This laminated film may have any of the following structure (D), structure (E), or structure (F), for example. In addition, the resin layer is a layer containing a curable resin component. Composition (D): Heat-insulating resin layer/light absorption layer/resin layer Composition (E): Supporting member/Insulation resin layer/Light absorption layer/Resin layer Composition (F): Supporting member/Insulation resin layer/Light absorption layer

In addition, the heat insulating resin layer refers to a layer that contains a curable resin component and can form a heat insulating layer by hardening the curable resin component. That is, the heat-insulating resin layer is a layer that can be called a precursor of the heat-insulating layer. The heat insulating layer may be a layer containing a cured product of the curable resin component in the heat insulating resin layer.

[Effects of the invention] According to the present invention, there is provided a method for manufacturing a semiconductor device that can easily separate a temporarily fixed semiconductor member from a supporting member, and can reduce the irradiation energy required when separating the temporarily fixed semiconductor member from the supporting member. In addition, the present invention provides a laminated film for a temporary fixing material that can be effectively used as a temporary fixing material.

Hereinafter, the embodiments of the present invention will be described with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps, etc.) are not essential unless otherwise specified. The size of the component elements in each figure is a conceptual size, and the relative size of the component elements is not limited to that shown in each figure.

The numerical values and ranges in this specification are the same, and do not limit the present invention. In this specification, the numerical range indicated by "～" means a range that includes the numerical values described before and after "～" as the minimum and maximum values, respectively. In the numerical ranges described stepwise in this specification, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of the numerical range described in another step. In addition, in the numerical range described in this specification, the upper limit or lower limit of the numerical range may be replaced with the value shown in the examples.

In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid. The same applies to other similar expressions such as (meth)acrylate and (meth)acryloyl.

[Method of Manufacturing Semiconductor Device] The manufacturing method of the semiconductor device of the present embodiment includes a preparation step of preparing a support member, a heat insulating layer, and a temporary fixing material layer that absorbs light and generates heat (hereinafter, sometimes referred to as "temporary fixing material layer"), And a laminated body of the semiconductor member; and a separation step of irradiating light to the temporary fixing material layer in the laminated body to separate the semiconductor member from the supporting member.

＜Preparation steps of laminated body＞ 1(a) and 1(b) are schematic cross-sectional views for explaining an embodiment of the method of manufacturing a semiconductor device of the present invention, and FIGS. 1(a) and 1(b) are schematic cross-sectional views showing each step Figure. As shown in FIG. 1( a ), in the preparation step of the laminate, a laminate 100 in which a support member 10, a heat insulating layer 70, a temporary fixing material layer 30 c, and a semiconductor member 40 are sequentially laminated is prepared.

The supporting member 10 is not particularly limited. For example, it may be a resin substrate such as a glass substrate (thermal conductivity: 1 W/m･K), an epoxy resin substrate (thermal conductivity: 0.2 W/m･K), or a silicon wafer (thermal conductivity: : 168 W/m･K), copper film (thermal conductivity: 398 W/m･K) and other metal films. The support member 10 may be a substrate that does not hinder the transmission of light (transmits light), or may be a glass substrate.

The thickness of the supporting member 10 may be 0.1 mm to 2.0 mm, for example. If the thickness is 0.1 mm or more, the handling tends to be easier, and if the thickness is 2.0 mm or less, the material cost tends to be suppressed.

The heat insulating layer 70 is not particularly limited, but from the viewpoint of suppressing the heat diffusion from the temporary fixing material layer described later to the supporting member and promoting the temperature rise of the temporary fixing material layer, the heat insulating layer 70 may have a thermal conductivity higher than that of the supporting member 10. A low layer (a layer including a material with a lower thermal conductivity than the material of the support member 10). The heat insulating layer 70 can be suitably selected and applied according to the type of the supporting member 10 used, which can form a layer having a lower thermal conductivity than the supporting member 10. In the case that the supporting member 10 is a glass substrate, the heat insulating layer 70 may include, for example, acrylonitrile butadiene styrene (acrylonitrile butadiene styrene, ABS) resin, epoxy resin, polyethylene, phenol resin, and polyimide. , Styrene rubber and other resins, porous metals, ceramics, etc. In addition, when the support member 10 is a glass substrate, a cured resin layer containing a cured product of a curable resin component in the temporary fixing material layer described later can be used as the heat insulating layer 70. That is, the heat insulating layer 70 may be a layer containing a cured product of a curable resin component. In addition, the heat insulating layer 70 may be a layer that does not hinder the transmission of light (transmits light).

From the viewpoint of suppressing the heat diffusion from the temporary fixing material layer to the supporting member described later and promoting the temperature rise of the temporary fixing material layer, the thickness of the heat insulating layer 70 may be 0.1 μm to 500 μm, 0.3 μm to 200 μm, or 0.5 μm～100 μm.

The method of forming the heat insulating layer 70 on the support member 10 is not particularly limited, and a known method can be applied. For example, in the case where a cured resin layer containing a cured product of a curable resin component in the temporary fixing material layer described later is used as the heat insulating layer 70, it can be formed by the same method as the formation method of the resin layer 34 described later The resin layer (hereinafter, the layer that can form a heat-insulating layer and contains the curable resin component before curing is sometimes referred to as the "heat-insulating resin layer"), and hardens the curable resin component in the heat-insulating resin layer, by In this way, a heat insulating layer 70 containing a cured product of a curable resin component is formed. In the case of using a varnish of a curable resin component diluted with a solvent, the curable resin component can be applied to the support member 10, and the solvent is heated and dried to remove it. The resin component hardens to form. In addition, similarly to the resin layer 34 described later, the heat insulating layer 70 can also be formed by making a heat insulating resin layer using a curable resin component film containing a curable resin component, and curing the curable resin component in the heat insulating resin layer. When a cured resin layer containing a cured product of a curable resin component is used as the heat insulating layer 70, the curable resin component of the heat insulating resin layer may be cured before the temporary fixing material layer 30c is formed on the heat insulating layer 70, or After arranging the semiconductor member 40 on the support member 10 via the heat insulating resin layer and the temporary fixing material precursor layer 30, the curable resin component in the heat insulating resin layer and the curable resin component in the temporary fixing material precursor layer 30 And harden.

The temporary fixing material layer 30c is a layer for temporarily fixing the support member 10 and the semiconductor member 40, and is a layer that absorbs light and generates heat when irradiated with light. The light to be the absorption target of the temporary fixing material layer 30c may be light including any of infrared light, visible light, or ultraviolet light. As far as the light absorbing layer described later can efficiently generate heat, the light to be absorbed by the temporary fixing material layer 30c may be light including at least infrared light. In addition, the temporary fixing material layer 30c may be a layer that absorbs infrared light and generates heat when irradiated with light including infrared light.

The laminated body 100 shown in FIG. 1(a) can be produced by, for example, the following method: in the support member 10 provided with the heat insulating layer 70, a temporary fixing material precursor layer is formed on the heat insulating layer 70, and the temporary fixing material precursor The semiconductor member is arranged on the material layer, and the curable resin component in the temporary fixing material precursor layer is cured to form the temporary fixing material layer 30c.

The temporary fixing material precursor layer may have a light absorption layer that absorbs light and generates heat, and a resin layer containing a curable resin component. 2(a) and 2(b) are schematic cross-sectional views showing one embodiment of a precursor layer of a temporary fixing material. As the temporary fixing material precursor layer 30, when it has a light absorbing layer 32 and a resin layer 34, its composition is not particularly limited. For example, it may include the light absorbing layer 32 and the resin layer in order from the heat insulating layer 70 side. The configuration of 34 (FIG. 2( a )), the configuration of the light absorbing layer 32, the resin layer 34, and the light absorbing layer 32 in this order from the heat insulating layer 70 side (FIG. 2( b )), and the like. Among these, the temporary fixing material precursor layer 30 may have a light absorption layer 32 and a resin layer 34 in this order from the heat insulating layer 70 side (FIG. 2( a )). Hereinafter, the aspect of the temporary fixing material precursor layer 30 using the structure shown in FIG. 2(a) will be mainly described in detail.

One aspect of the light-absorbing layer 32 is a layer (hereinafter, sometimes referred to as a “conductor layer”) containing a conductor (hereinafter, sometimes referred to as “conductor”) that absorbs light and generates heat. The conductor constituting such a conductor layer is not particularly limited as long as it is a conductor that absorbs light and generates heat, and may be a conductor that absorbs infrared light and generates heat. Examples of conductors include metals such as chromium, copper, titanium, silver, platinum, gold, alloys such as nickel-chromium, stainless steel, copper-zinc, and metal oxides such as indium tin oxide (ITO), zinc oxide, and niobium oxide. , Conductive carbon and other carbon materials. These can also be used individually by 1 type or in combination of 2 or more types. Among these, the conductor may be chromium, titanium, copper, aluminum, silver, gold, platinum, or carbon.

The light absorption layer 32 may also include a plurality of conductor layers. As such a light absorbing layer, for example, a light absorbing layer including a first conductive layer provided on the support member 10 and a second conductive layer provided on the surface of the first conductive layer opposite to the support member 10 Wait. From the viewpoints of adhesion to a support member (for example, glass), film-forming properties, thermal conductivity, low heat capacity, etc., the electrical conductor in the first electrical conductor layer may be titanium. From the viewpoint of high expansion coefficient and high thermal conductivity, the conductor in the second conductor layer may be copper, aluminum, silver, gold, or platinum, and among these, copper or aluminum is also preferred.

The conductor layer as the light absorbing layer 32 can be deposited by chemical vapor deposition (physical vapor deposition, PVD) such as vacuum vapor deposition, sputtering, electrolytic plating, electroless plating, plasma chemical vapor deposition ( chemical vapor deposition, CVD), these conductors are directly formed on the support member 10. Among these, since the conductive layer can be formed in a large area, the conductive layer can be formed using physical vapor deposition, or sputtering or vacuum evaporation.

From the viewpoint of light peelability, the thickness of one aspect of the light absorption layer 32 may be 1 nm to 5000 nm (0.001 μm to 5 μm) or 50 nm to 3000 nm (0.05 μm to 3 μm). In the case where the light absorbing layer 32 includes a first conductive layer and a second conductive layer, the thickness of the first conductive layer may be 1 nm to 1000 nm, 5 nm to 500 nm, or 10 nm to 100 nm, and the second conductive layer The thickness can be 1 nm to 5000 nm, 10 nm to 500 nm, 30 nm to 300 nm, or 50 nm to 200 nm.

Another aspect of the light absorbing layer 32 is a layer containing a cured product of a curable resin composition containing conductive particles that absorb light and generate heat. The curable resin composition may contain conductive particles and curable resin components.

The conductive particles are not particularly limited as long as they absorb light and generate heat, and they may absorb infrared light and generate heat. The conductive particles can be selected from, for example, silver powder, copper powder, nickel powder, aluminum powder, chromium powder, iron powder, brass powder, tin powder, titanium alloy, gold powder, alloy copper powder, copper oxide powder, silver oxide powder, tin oxide At least one of the group consisting of powder and conductive carbon powder. From the viewpoint of operability and safety, the conductive particles may be at least one selected from the group consisting of silver powder, copper powder, silver oxide powder, copper oxide powder, and carbon powder. In addition, the conductive particles may be particles obtained by using a resin or a metal as a core and plating the core with a metal such as nickel, gold, or silver. Furthermore, from the viewpoint of dispersibility with a solvent, the conductive particles may be particles whose surfaces are treated with a surface treatment agent.

The content of the conductive particles may be 10 parts by mass to 90 parts by mass relative to 100 parts by mass of the total amount of curable resin components. In addition, the organic solvent described later is not included in the curable resin component. The content of the conductive particles may be 15 parts by mass or more, 20 parts by mass or more, or 25 parts by mass or more. The content of the conductive particles may be 80 parts by mass or less or 50 parts by mass or less.

The curable resin component may be a curable resin component that is cured by heat or light. The curable resin component may include, for example, a thermosetting resin, a curing agent, and a curing accelerator. The thermosetting resin, curing agent, and curing accelerator may be those exemplified in the curable resin component in the resin layer described later. The total content of the thermosetting resin and the curing agent may be 10 parts by mass to 90 parts by mass relative to 100 parts by mass of the total amount of components other than the conductive particles of the curable resin composition. The content of the hardening accelerator may be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin and hardener.

The light absorption layer 32 can be formed of a curable resin composition containing conductive particles that absorb light and generate heat. The curable resin composition can also be used as a varnish of the curable resin composition diluted with an organic solvent. As an organic solvent, acetone, ethyl acetate, butyl acetate, methyl ethyl ketone (methyl ethyl ketone, MEK) etc. are mentioned, for example. These organic solvents can also be used individually by 1 type or in combination of 2 or more types. The solid content concentration in the varnish may be 10% by mass to 80% by mass based on the total mass of the varnish.

The light absorption layer 32 can be formed by directly applying a curable resin composition on the support member 10. In the case of using a varnish of a curable resin composition diluted with an organic solvent, it can be formed by coating the curable resin composition on the support member 10 and heating and drying the solvent to remove it.

From the viewpoint of light peelability, the thickness of another aspect of the light absorption layer 32 may be 1 nm to 5000 nm (0.001 μm to 5 μm) or 50 nm to 3000 nm (0.05 μm to 3 μm).

Then, the resin layer 34 is formed on the light absorption layer 32.

The resin layer 34 is a layer that does not contain conductive particles, and is a layer that contains a curable resin component that is cured by heat or light. The resin layer 34 may be a layer containing a curable resin component. The curable resin component may be a curable resin component that is cured by heat or light. Hereinafter, the case where the resin layer 34 is a layer containing a curable resin component will be described in detail.

The curable resin component may include a thermoplastic resin, a polymerizable monomer, and a polymerization initiator.

The thermoplastic resin may be a resin having thermoplasticity, or a resin having thermoplasticity at least in an uncured state and forming a crosslinked structure after heating. Examples of thermoplastic resins include elastomers, polycarbonates, polyphenylene sulfide, polyether agglomerates, polyether imines, polyimides, petroleum resins, and novolac resins. These can be used individually by 1 type or in combination of 2 or more types. Among them, the thermoplastic resin may be an elastomer from the viewpoint of bump embedding properties and low-temperature adhesion properties.

Specific examples of the elastomer include: ethylene-propylene copolymer elastomer, ethylene-1-butene copolymer elastomer, ethylene-propylene-1-butene copolymer elastomer, and ethylene-1-hexene copolymer Elastomers, ethylene-1-octene copolymer elastomer, ethylene-styrene copolymer elastomer, ethylene-norbornene copolymer elastomer, propylene-1-butene copolymer elastomer, ethylene-propylene-non-copolymer Conjugated diene copolymer elastomer, ethylene-1-butene-non-conjugated diene copolymer elastomer, ethylene-propylene-1-butene-non-conjugated diene copolymer elastomer, polyisoprene, Polybutadiene, carboxyl-terminated polybutadiene, hydroxyl-terminated polybutadiene, 1,2-polybutadiene, carboxyl-terminated 1,2-polybutadiene, hydroxyl-terminated 1,2-polybutadiene, Acrylic rubber, styrene-butadiene rubber, hydroxyl-terminated styrene-butadiene rubber, acrylonitrile-butadiene rubber, containing carboxyl, hydroxyl, (meth)acryloyl or morpholino at the end of the polymer Acrylonitrile-butadiene rubber, carboxylated nitrile rubber, hydroxyl-terminated poly(oxypropylene), alkoxysilyl-terminated poly(oxypropylene), poly(oxytetramethylene) glycol, polyolefin glycol, Poly-ε-caprolactone and so on. These elastomers can also be hydrogenated. Among these, the elastomer may be an elastomer containing a monomer unit derived from styrene.

The Tg of the thermoplastic resin may be -100°C to 500°C, -50°C to 300°C, or -50°C to 50°C. When the Tg of the thermoplastic resin is 500°C or less, it tends to be easy to ensure flexibility when forming a film-like temporary fixing material, and the low-temperature adhesiveness can be improved. When the Tg of the thermoplastic resin is -100°C or higher, when forming a film-like temporary fixing material, it is possible to suppress the decrease in handleability and releasability caused by excessively high flexibility.

The Tg of the thermoplastic resin is the midpoint glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the thermoplastic resin is measured at a temperature increase rate of 10°C/min and a measurement temperature of -80°C to 80°C, by a method based on Japanese Industrial Standards (JIS) K 7121 And the calculated intermediate point glass transition temperature.

The weight average molecular weight (Mw) of the thermoplastic resin can be 10,000 to 5 million or 100,000 to 2 million. If the weight average molecular weight is 10,000 or more, it tends to be easy to ensure the heat resistance of the formed temporary fixing material layer. If the weight average molecular weight is 5 million or less, when forming a film-like temporary fixing material layer or a resin layer, it tends to easily suppress a decrease in flow and adhesiveness. In addition, the weight average molecular weight is a polystyrene conversion value obtained by using gel permeation chromatography (GPC) and using a calibration curve using standard polystyrene.

The content of the thermoplastic resin may be 10 parts by mass to 90 parts by mass relative to 100 parts by mass of the total amount of curable resin components. The content of the thermoplastic resin may be 30 parts by mass or more, 50 parts by mass or more, or 70 parts by mass or more, and may be 88 parts by mass or less, 85 parts by mass or less, or 82 parts by mass or less. If the content of the thermoplastic resin is in the above range, the film forming property and flatness of the temporary fixing material layer tend to be more excellent.

The polymerizable monomer is not particularly limited as long as it is polymerized by heating or irradiation with ultraviolet light or the like. From the viewpoint of material selectivity and ease of acquisition, the polymerizable monomer may be, for example, a compound having a polymerizable functional group such as an ethylenically unsaturated group. Examples of polymerizable monomers include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinyl pyridine, vinyl amide, and arylated vinyl. Among these, the polymerizable monomer may be (meth)acrylate. The (meth)acrylate may be any one of monofunctional (monofunctional), difunctional, or trifunctional or higher, but from the viewpoint of obtaining sufficient curability, it may be (meth)acrylic acid having a bifunctional or higher ester.

Examples of monofunctional (meth)acrylates include: (meth)acrylic acid; methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isopropyl (meth)acrylate Butyl ester, tertiary butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethyl (meth)acrylate Hexyl ester, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, decyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, (meth) )-2-hydroxypropyl acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxy polyethylene glycol (meth)acrylate , Ethoxy polyethylene glycol (meth) acrylate, methoxy polypropylene glycol (meth) acrylate, ethoxy polypropylene glycol (meth) acrylate, succinic acid mono (2-(methyl) Aliphatic (meth)acrylates such as acryloxyethyl); benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, (meth)acrylic acid- 1-naphthyl ester, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumyl phenoxyethyl (meth)acrylate, o-phenyl (meth)acrylate Phenoxy ethyl, 1-naphthoxy ethyl (meth)acrylate, 2-naphthoxy ethyl (meth)acrylate, phenoxy polyethylene glycol (meth)acrylate, nonyl Phenoxy polyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, (meth)acrylic acid-2-hydroxy-3-phenoxypropyl ester, (meth)acrylic acid -2-Hydroxy-3-(o-phenylphenoxy)propyl ester, (meth)acrylic acid-2-hydroxy-3-(1-naphthyloxy)propyl ester, (meth)acrylic acid-2-hydroxy- Aromatic (meth)acrylates such as 3-(2-naphthyloxy)propyl ester and the like.

As difunctional (meth)acrylates, for example, ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol Ethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylic acid Ester, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate , 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1, 6-hexanediol di(meth)acrylate, 2-butyl-2-ethyl-1,3-propanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate , 1,10-decanediol di(meth)acrylate, glycerol di(meth)acrylate, tricyclodecane dimethanol (meth)acrylate, ethoxylated 2-methyl-1,3 -Aliphatic (meth)acrylates such as propylene glycol di(meth)acrylate; ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, ethyl Oxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate, ethoxylate Alkylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, ethoxylated propylene Aromatic (meth)acrylates such as oxyfluorene type di(meth)acrylate.

As trifunctional or higher polyfunctional (meth)acrylates, for example, trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxy Alkylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol Tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, ethoxy Pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, di-trimethylolpropane tetraacrylate , Dipentaerythritol hexa(meth)acrylate and other aliphatic (meth)acrylates; phenol novolak type epoxy (meth)acrylate, cresol novolak type epoxy (meth)acrylate and other aromatics Group epoxy (meth)acrylate and so on.

These (meth)acrylates can be used individually by 1 type or in combination of 2 or more types. Furthermore, these (meth)acrylates can also be used in combination with other polymerizable monomers.

The content of the polymerizable monomer may be 10 parts by mass to 90 parts by mass relative to 100 parts by mass of the total amount of curable resin components. The content of the polymerizable monomer may be 12 parts by mass or more, 15 parts by mass or more, or 18 parts by mass or more. If the content of the polymerizable monomer is 10 parts by mass or more with respect to 100 parts by mass of the total amount of the curable resin component, the temporary fixing material layer tends to have excellent heat resistance. The content of the polymerizable monomer may be 70 parts by mass or less, 50 parts by mass or less, or 30 parts by mass or less. If the content of the polymerizable monomer is 90 parts by mass or less with respect to 100 parts by mass of the total amount of the curable resin component, there is a tendency that peeling, breakage, etc. in the process can be suppressed.

The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light or the like. For example, when a compound having an ethylenically unsaturated group is used as a polymerizable monomer, the polymerizable initiator may be a thermal radical polymerization initiator or a photo radical polymerization initiator.

As the thermal radical polymerization initiator, for example, diamino peroxides such as octyl peroxide, lauryl peroxide, stearyl peroxide, and benzyl peroxide; Tert-butyl methyl acetate, tertiary hexyl peroxy trimethyl acetate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl -2,5-bis(2-ethylhexylperoxy)hexane, tertiary hexylperoxy-2-ethylhexanoate, tertiary butylperoxy-2-ethylhexanoate, Tertiary butyl peroxy isobutyrate, tertiary hexyl peroxide isopropyl monocarbonate, tertiary butyl peroxy-3,5,5-trimethylhexanoate, tertiary butyl peroxide laurel Ester, tert-butylperoxy isopropyl monocarbonate, tert-butylperoxy-2-ethylhexyl monocarbonate, tert-butylperoxybenzoate, tert-hexylperoxybenzoate Acid ester, 2,5-dimethyl-2,5-bis(benzylperoxy)hexane, tert-butyl peroxyacetate and other peroxy esters; 2,2'-azobis Isobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile), etc. Nitrogen compounds, etc.

As the photoradical polymerization initiator, for example, benzoin ketal such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexyl phenyl ketone, 2 -Hydroxy-2-methyl-1-phenylpropane-1-one, 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propane-1- Alpha-hydroxy ketones such as ketones; bis(2,4,6-trimethylbenzyl)phenyl phosphine oxide, bis(2,6-dimethoxybenzyl)-2,4,4- Phosphine oxides such as trimethylpentyl phosphine oxide and 2,4,6-trimethylbenzyl diphenyl phosphine oxide.

These thermal radical polymerization initiators and photo radical polymerization initiators can be used alone or in combination of two or more.

The content of the polymerization initiator may be 0.01 parts by mass to 5 parts by mass relative to 100 parts by mass of the total amount of polymerizable monomers. The content of the polymerization initiator may be 0.03 parts by mass or more, or 0.05 parts by mass or more. If the content of the polymerization initiator is 0.01 parts by mass or more with respect to 100 parts by mass of the total amount of the polymerizable monomers, the curability is improved and the heat resistance tends to become better. The content of the polymerization initiator may be 3 parts by mass or less, 1 part by mass or less, or 0.1 parts by mass or less. If the content of the polymerizable monomer is 5 parts by mass or less with respect to 100 parts by mass of the total amount of the polymerizable monomer, there is a tendency that gas generation in the process can be suppressed.

If necessary, the curable resin component may further contain a thermosetting resin, a curing accelerator, an insulating filler, a sensitizer, an antioxidant, and the like.

The thermosetting resin is not particularly limited as long as it is a resin that is cured by heat. Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenol resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. These can be used individually by 1 type or in combination of 2 or more types. Among these, the thermosetting resin may be an epoxy resin in terms of more excellent heat resistance, workability, and reliability. When using an epoxy resin as a thermosetting resin, it can also be used in combination with an epoxy resin hardener.

The epoxy resin is not particularly limited as long as it has a heat-resistant effect for curing. Examples of epoxy resins include bifunctional epoxy resins such as bisphenol A epoxy resins, novolac epoxy resins such as phenol novolac epoxy resins, and cresol novolac epoxy resins. In addition, the epoxy resin may be a multifunctional epoxy resin, a glycidylamine epoxy resin, a heterocyclic epoxy resin, or an alicyclic epoxy resin.

As the epoxy resin hardener, a known hardener that is generally used can be used. Examples of the epoxy resin curing agent include: amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenol A, bisphenol F, bisphenol S, etc., which have two or more phenols in one molecule Phenolic resins such as bisphenol, phenol novolak resin, bisphenol A novolak resin, cresol novolak resin, etc.

The content of the thermosetting resin and the curing agent may be 10 parts by mass to 90 parts by mass relative to 100 parts by mass of the total amount of the curable resin component. If the content of the thermosetting resin and the curing agent is within the above range, the heat resistance tends to become better.

Examples of hardening accelerators include imidazole derivatives, dicyandiamide derivatives, dihydrazine dicarboxylic acid, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methyl Imidazole-tetraphenylborate, 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate, etc. These can also be used individually by 1 type or in combination of 2 or more types.

The content of the hardening accelerator may be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin and hardener. If the content of the hardening accelerator is within the above-mentioned range, the hardening properties are improved and the heat resistance tends to become better.

The insulating filler can be added for the purpose of imparting low thermal expansion and low hygroscopicity to the resin layer. Examples of insulating fillers include non-metallic inorganic fillers such as silicon dioxide, aluminum oxide, boron nitride, titanium dioxide, glass, and ceramics. These insulating fillers can also be used individually by 1 type or in combination of 2 or more types. From the viewpoint of dispersibility with a solvent, the insulating filler may be particles whose surfaces have been treated with a surface treatment agent. The surface treatment agent can be the same as the silane coupling agent.

The content of the insulating filler may be 5 parts by mass to 20 parts by mass relative to 100 parts by mass of the total amount of the curable resin component. If the content of the insulating filler is within the above range, there is a tendency that heat resistance is further improved without hindering light transmission. In addition, it may also contribute to light peelability.

As the sensitizer, for example, anthracene, phenanthrene, 1,2-benzopyrene (chrysene), benzopyrene (benzopyrene), 1,2-benzoacenaphthene (fluoranthene), fluorene, pyrene, oxa Anthrone (xanthone), indanthrene, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4-isopropyl-9H-thioxanthene-9-one, 1- Chloro-4-propoxy thioxanthone and so on.

The content of the sensitizer may be 0.01 parts by mass to 10 parts by mass relative to 100 parts by mass of the total amount of curable resin components. If the content of the sensitizer is within the above range, there is a tendency that there is little influence on the properties of the curable resin component and film properties.

Examples of antioxidants include: quinone derivatives such as benzoquinone and hydroquinone; phenol derivatives such as 4-methoxyphenol and 4-tert-butylcatechol; 2,2,6,6-tetramethyl Aminooxy derivatives such as piperidine-1-oxy and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxy; hindered amines such as tetramethylpiperidine methacrylate Derivatives, etc.

The content of the antioxidant can be 0.1 to 10 parts by mass relative to 100 parts by mass of the total amount of the curable resin component. If the content of the antioxidant is within the above range, the decomposition of the curable resin component tends to be suppressed to prevent contamination.

The resin layer 34 may be formed of a curable resin component. The curable resin component can also be used as a varnish of the curable resin component diluted with a solvent. The solvent is not particularly limited as long as it can dissolve components other than the insulating filler. Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; methyl groups Cyclic alkanes such as cyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl- Ketones such as 2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; N, Amides such as N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These solvents can also be used individually by 1 type or in combination of 2 or more types. Among these, in terms of solubility and boiling point, the solvent may be toluene, xylene, heptane, or cyclohexane. The solid content concentration in the varnish may be 10% by mass to 80% by mass based on the total mass of the varnish.

The varnish of the curable resin component can be prepared by mixing and kneading the curable resin component and the solvent. Mixing and kneading can be performed by appropriately combining a dispersing machine such as a general mixer, a crusher, a three-roller, or a bead mill.

The resin layer 34 can be formed by directly applying a curable resin component to the light absorption layer 32. In the case of using a varnish of a curable resin component diluted with a solvent, it can be formed by applying a varnish of a curable resin component to the light absorption layer 32 and heating and drying the solvent to remove it. In addition, the resin layer 34 may be formed by producing a curable resin component film containing a curable resin component.

From the viewpoint of stress relaxation, the thickness of the resin layer 34 may be 0.1 μm to 2000 μm (0.0001 mm to 2 mm), 0.5 μm to 200 μm, or 1 μm to 100 μm.

The temporary fixing material precursor layer 30 and the heat insulating layer 70 can also be manufactured by the following methods: pre-fabricating a heat insulating layer 70, a light absorbing layer 32 that absorbs light and generates heat, and a resin layer 34 containing a curable resin component. The laminated film (hereinafter, sometimes referred to as the "laminated film for temporary fixing material"), and this is laminated so that the heat insulating layer 70 and the support member 10 are in contact with each other.

The light absorption layer 32 in the laminated film for temporary fixing materials may be a layer containing a conductor (conductor layer), and may be a layer containing electroconductive particle. The laminated film for the temporary fixing material may be provided on the support film, or a protective film may be provided on the surface opposite to the support film as needed.

The support film is not particularly limited, and examples include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyethylene, poly Polyolefins such as propylene; polycarbonate, polyamide, polyimide, polyimide imine, polyetherimine, polyether sulfide, polyether sulfide, polyether ketone, polyphenylene ether, polyphenylene Film of thioether, poly(meth)acrylate, polysulfide, liquid crystal polymer, etc. These can also be subjected to mold release treatment. The thickness of the support film can be 3 μm to 250 μm, for example.

Examples of the protective film include polyesters such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene. The thickness of the protective film can be, for example, 10 μm to 250 μm.

The laminated film for the temporary fixing material may sequentially have a heat insulating layer (when a cured resin layer containing a hardened resin component in the temporary fixing material layer is used as the heat insulating layer 70, it is a layer containing a curable resin component The heat insulation layer of the cured product, the light absorption layer, and the resin layer containing a curable resin component may have a heat insulation resin layer containing a curable resin component, a light absorption layer, and a resin layer containing a curable resin component in this order.

The temporary fixing material precursor layer 30 of the structure shown in FIG. 2( b) can be produced by forming the heat insulating layer 70, the light absorption layer 32, the resin layer 34, and the light absorption layer 32 on the support member 10, for example. These temporary fixing material precursor layers 30 can also be produced by prefabricating the above-mentioned laminated film for temporary fixing material and laminating it on the support member 10.

Then, the semiconductor component is arranged on the prepared temporary fixing material precursor layer, and the curable resin component in the temporary fixing material precursor layer 30 (resin layer 34) is cured to form a light absorbing layer and containing a curable resin The temporary fixing material layer of the resin hardening layer of the cured product of the component, thereby producing a laminated body in which the support member 10, the heat insulating layer 70, the temporary fixing material layer 30c that absorbs light and generates heat, and the semiconductor member 40 are sequentially laminated (Figure 1(a)). Figures 3(a), 3(b), 3(c), and 3(d) show an embodiment of a laminate formed using the temporary fixing material precursor layer shown in Figure 2(a) Schematic sectional view.

The semiconductor member 40 may be a semiconductor wafer or a semiconductor wafer in which the semiconductor wafer is cut into a predetermined size and singulated into a wafer shape. In the case of using a semiconductor wafer as the semiconductor member 40, a plurality of semiconductor wafers are generally used. From the viewpoints of miniaturization and thinning of the semiconductor device, and suppression of cracks during transportation and processing steps, the thickness of the semiconductor member 40 may be 1 μm to 1000 μm, 10 μm to 500 μm, or 20 μm to 200 μm. In the semiconductor wafer or semiconductor wafer, it may also include a rewiring layer and an external connection member with external connection terminals.

The semiconductor component 40 can be arranged on the temporary fixing material precursor layer 30 by setting the support member 10 provided with the prepared temporary fixing material precursor layer 30 on a vacuum press or a vacuum laminator. And laminated by pressing for crimping.

In the case of using a vacuum press, for example, the semiconductor member 40 is crimped and temporarily fixed at an air pressure of 1 hPa or less, a crimping pressure of 1 MPa, a crimping temperature of 120°C to 200°C, and a holding time of 100 seconds to 300 seconds. Material precursor layer 30.

In the case of using a vacuum laminator, for example, the air pressure is 1 hPa or less, the crimping temperature is 60℃～180℃ or 80℃～150℃, the lamination pressure is 0.01 MPa～0.5 MPa or 0.1 MPa～0.5 MPa, and the holding time is 1 For seconds to 600 seconds or 30 seconds to 300 seconds, the semiconductor member 40 is crimped to the temporary fixing material precursor layer 30.

After arranging the semiconductor member 40 on the support member 10 via the heat insulating layer 70 and the temporary fixing material precursor layer 30, the curable resin component in the temporary fixing material precursor layer 30 is thermally cured or photocured under predetermined conditions. When a cured resin layer containing a cured product of a curable resin component in the temporary fixing material layer is used as the heat-insulating layer 70, the curable resin component in the heat-insulating resin layer may also be cured by heat or light. hardening. The conditions for thermal hardening can be, for example, 300°C or lower, or 100°C to 200°C, and 1 minute to 180 minutes, or 1 minute to 60 minutes. In this way, the cured product of the curable resin component is formed, and the semiconductor member 40 is temporarily fixed to the support member 10 via the temporary fixing material layer 30 c containing the cured product of the curable resin component, thereby obtaining the laminated body 300. As shown in FIG. 3( a ), the temporary fixing material layer 30 c may include a light absorbing layer 32 and a cured resin layer 34 c that contains a cured resin component.

The laminate can also be produced by forming a temporary fixing material layer and then arranging a semiconductor member. It is a schematic cross-sectional view for explaining another embodiment of the method of manufacturing the laminate shown in Fig. 1(a), and Fig. 5(a), Fig. 5(b), and Fig. 5(c) show the steps Schematic sectional view. The steps of Fig. 5(a), Fig. 5(b), and Fig. 5(c) use the temporary fixing material precursor layer shown in Fig. 2(a). The laminate can be produced by forming a heat insulating layer 70 on the support member 10, and forming a temporary fixing material precursor layer 30 containing a curable resin component on the formed heat insulating layer 70 (FIG. 5(a)), The curable resin component in the temporary fixing material precursor layer 30 (resin layer 34) is cured to form a temporary fixing material layer 30c (FIG. 5(b)) containing a cured product of the curable resin component, and the semiconductor member 40 It is arranged on the formed temporary fixing material layer 30c (FIG. 5(c)). In this manufacturing method, the rewiring layer 41 can be provided on the temporary fixing material layer 20c before the semiconductor member 40 is placed. Therefore, the rewiring layer 41 can be formed by arranging the semiconductor member 40 on the rewiring layer 41. Semiconductor member 40.

The semiconductor member 40 (the semiconductor member 40 temporarily fixed to the support member 10) in the laminated body 100 may be further processed. By processing the semiconductor member 40 in the laminated body 300 shown in FIG. 3(a), the laminated body 310 (FIG. 3(b)), the laminated body 320 (FIG. 3(c)), and the laminated body 330 ( Figure 3 (d)) and so on. The processing of the semiconductor member is not particularly limited, and examples thereof include thinning of the semiconductor member, production of a through electrode, formation of a rewiring layer, etching treatment, plating reflow treatment, and sputtering treatment.

The thinning of the semiconductor member can be performed by grinding the surface of the semiconductor member 40 on the opposite side to the surface of the temporary fixing material layer 30c with a grinder or the like. The thickness of the thinned semiconductor member may be 100 μm or less, for example.

The grinding conditions can be arbitrarily set according to the thickness and grinding state of the desired semiconductor member.

The through-electrode can be produced by performing processing such as dry ion etching, Bosch process, etc., on the surface of the thinned semiconductor member 40 that is opposite to the surface in contact with the temporary fixing material layer 30c to form through holes After that, copper plating is performed.

By processing the semiconductor member 40 in this manner, for example, a laminate 310 in which the semiconductor member 40 is thinned and provided with the through electrode 44 can be obtained (FIG. 3( b )).

As shown in FIG. 3(c), the laminate 310 shown in FIG. 3(b) may be covered with the sealing layer 50. The material of the sealing layer 50 is not particularly limited, and may be a thermosetting resin composition in terms of heat resistance, reliability, and the like. Examples of the thermosetting resin used in the sealing layer 50 include epoxy resins such as cresol novolak epoxy resin, phenol novolak epoxy resin, biphenyl diepoxy resin, and naphthol novolak epoxy resin. Wait. Additives such as fillers and/or flame-retardant substances such as bromine compounds may be added to the composition for forming the sealing layer 50.

The supply form of the sealing layer 50 is not particularly limited, and may be a solid material, a liquid material, a fine particle material, a film material, and the like.

When sealing the processed semiconductor member 42 with the sealing layer 50 formed of a sealing film, for example, a compression-sealing molding machine, a vacuum laminating device, etc. can be used. Using the device, for example, under the conditions of 40°C to 180°C (or 60°C to 150°C), 0.1 MPa to 10 MPa (or 0.5 MPa to 8 MPa), and 0.5 minutes to 10 minutes, the use of hot melt sealing The film covers the processed semiconductor member 42 so that the sealing layer 50 can be formed. The sealing film can also be prepared in a state of being laminated on a release liner such as a polyethylene terephthalate (PET) film. In this case, after disposing the sealing film on the processed semiconductor member 42 and burying the processed semiconductor member 42, the release liner is peeled off, whereby the sealing layer 50 can be formed. In this way, the laminated body 320 shown in FIG. 3(c) can be obtained.

The thickness of the sealing film is adjusted so that the sealing layer 50 becomes the thickness of the processed semiconductor member 42 or more. The thickness of the sealing film can be 50 μm to 2000 μm, 70 μm to 1500 μm, or 100 μm to 1000 μm.

As shown in FIG. 3(d), the processed semiconductor member 42 having the sealing layer 50 may also be singulated by cutting. In this way, the laminated body 330 shown in FIG. 3(d) can be obtained. Furthermore, the singulation by dicing may be implemented after the step of separating the semiconductor member described later.

＜Separation steps of semiconductor components＞ As shown in FIG. 1( b ), in the step of separating the semiconductor member, the temporary fixing material layer 30 c in the laminate 100 is irradiated with light in the direction A to separate the semiconductor member 40 from the supporting member 10.

4(a) and 4(b) are schematic cross-sectional views for explaining one embodiment of the method of manufacturing a semiconductor device of the present invention using the laminate shown in FIG. 3(d), and FIG. 4(a) And Fig. 4(b) is a schematic cross-sectional view showing each step.

When the temporary fixing material layer 30c is irradiated with light, the light absorbing layer 32 absorbs the light and instantly generates heat, thereby melting the cured resin layer 34c or the heat insulating layer 70 at the interface or the whole, and the supporting member 10 and the semiconductor member 40 (processing The stress of the semiconductor member 42), the scattering of the light absorption layer 32, and the like. Due to the occurrence of this phenomenon, the temporarily fixed processed semiconductor member 42 can be easily separated (peeled) from the supporting member 10. Furthermore, in the separation step, the processed semiconductor member 42 may be slightly stressed in a direction parallel to the main surface of the support member 10 while light is irradiated.

The light in the separation step may be incoherent light. Incoherent light is an electromagnetic wave with properties such as no interference fringes, low interferability, and low directivity. The longer the optical path, the more attenuated it is. Incoherent light is light that is not coherent light. Laser light is generally coherent light. In contrast, light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be called light other than laser light. The irradiation area of incoherent light is much wider than that of coherent light (ie, laser light), so the number of irradiations (for example, one time) can be reduced.

The light in the separation step may be light containing at least infrared light. The light source of the light in the separation step is not particularly limited, and may be a xenon lamp. The xenon lamp is a lamp that emits light by applying and discharging using an arc tube enclosed with xenon gas. The xenon lamp repeatedly ionizes and excites while discharging, so it stably has a continuous wavelength from the ultraviolet region to the infrared region. Compared with lamps such as metal halide lamps, xenon lamps require less time to start, so the time required for the steps can be greatly reduced. In addition, high voltage needs to be applied during light emission, so high heat is generated instantaneously, but the cooling time is short and continuous operation is possible. In addition, the irradiation area of a xenon lamp is much wider than that of laser light, so the number of irradiations can be reduced (for example, once).

The irradiation conditions of the xenon lamp can be arbitrarily set for the applied voltage, pulse width, irradiation time, irradiation distance (the distance between the light source and the temporarily fixed material layer), and irradiation energy. The irradiation conditions with the xenon lamp can be set to be separable by one irradiation, and can also be set to be separable by two or more irradiations. From the viewpoint of reducing the damage of the processed semiconductor member 42, the irradiation of the xenon lamp The conditions can be set to be separable by one irradiation.

The manufacturing method of the semiconductor device of this embodiment can reduce the irradiation energy, and therefore can reduce the damage of the processed semiconductor member 42.

The separation step may be a step of irradiating the temporary fixing material layer 30 c with light via the supporting member 10 (direction A in FIG. 4( a )). That is, the irradiation with light with respect to the temporary fixing material layer 30c may be irradiation on the side of the self-supporting member 10. By irradiating light to the temporary fixing material layer 30c through the support member 10, the entire temporary fixing material layer 30c can be irradiated.

When the semiconductor member 40 or the processed semiconductor member 42 is separated from the supporting member 10, the residue 30c' of the temporary fixing material layer is attached to the semiconductor member 40 or the processed semiconductor member 42 (FIG. 4(a), FIG. 4(b)) In the case of, these can be cleaned by solvent. The solvent is not particularly limited, and examples include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These can be used individually by 1 type or in combination of 2 or more types. In addition, it can be immersed in these solvents, and ultrasonic cleaning can also be performed. Furthermore, you may heat in the range of 100 degrees C or less.

By separating the semiconductor member from the supporting member in this manner, a semiconductor element 60 including the semiconductor member 40 or the processed semiconductor member 42 can be obtained (FIG. 4( b )). A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting a semiconductor element.

[Laminated film for temporary fixing materials] One aspect of the laminated film for temporary fixing material for temporarily fixing the semiconductor member to the support member is a laminated film having a heat insulating layer and a light absorption layer that absorbs light and generates heat. The laminated film may further have a resin layer containing a curable resin component, and have a heat insulation layer, a light absorption layer, and a resin layer in this order, or may further have a supporting member, and have a supporting member, a heat insulation layer, and a light absorption layer in this order , And resin layer.

On the other hand, in a laminated film having a heat insulating layer and a light absorbing layer that absorbs light and generates heat, the laminated film may further have a supporting member, and sequentially have a supporting member, a heat insulating layer, and a light absorbing layer.

The laminated film for temporary fixing materials of this aspect may have any one of the following structure (A), structure (B), or structure (C), for example. The laminated film for temporary fixing material which has the structure (A) can also be called the laminated film which has the heat insulating layer 70 and the temporary fixing material precursor layer 30. Composition (A): Thermal insulation layer/light absorption layer/resin layer Composition (B): support member/heat insulation layer/light absorption layer/resin layer Composition (C): Supporting member/Insulation layer/Light absorption layer

When a cured resin layer containing a cured product of a curable resin component in the temporary fixing material layer is used as a heat insulating layer, another aspect of the laminated film for temporary fixing material has a heat insulating resin containing a curable resin component Layer and a laminated film of a light-absorbing layer that absorbs light and generates heat. The laminated film may further have a resin layer containing a curable resin component, and sequentially have a heat-insulating resin layer, a light absorption layer, and a resin layer, or may further have a supporting member, and sequentially have a supporting member, a heat-insulating resin layer, and a light Absorbing layer, and resin layer.

On the other hand, in a laminated film having a heat-insulating resin layer containing a curable resin component and a light-absorbing layer that absorbs light to generate heat, the laminated film may further have a supporting member, and sequentially have a supporting member and a heat-insulating resin layer , And light absorption layer.

The laminated film for temporary fixing materials of this aspect may have any one of the following structure (D), structure (E), or structure (F), for example. Composition (D): Heat-insulating resin layer/light absorption layer/resin layer Composition (E): Supporting member/Insulation resin layer/Light absorption layer/Resin layer Composition (F): Supporting member/Insulation resin layer/Light absorption layer [Example]

Hereinafter, the present invention will be explained more specifically by referring to examples. The present invention is not limited to these embodiments.

(Example 1) [Production of curable resin component film] <Preparation of curable resin components> 80 parts by mass of hydrogenated styrene-butadiene elastomer (trade name: Dynaron 2324P, JSR Co., Ltd.) as a thermoplastic resin and 1,9-nonanediol diacrylic acid as a polymerizable monomer 20 parts by mass of ester (trade name: FA-129AS, Hitachi Chemical Co., Ltd.) and 1 part by mass of peroxy ester (trade name: Perhexa 25O, NOF Corporation) as a polymerization initiator mixing. In addition, the hydrogenated styrene-butadiene elastomer was diluted with toluene to a solid content of 40% by mass and used. In the manner described above, a varnish of a curable resin component diluted with toluene as a solvent was prepared.

<Production of curable resin component film> Using a precision coater, apply the obtained varnish of the curable resin component to a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont) in a thickness of 5 μm Film (Teijin Dupont Film) Co., Ltd., thickness: 38 μm) was heated at 80°C for 10 minutes on the mold release treatment surface to dry and remove the solvent to produce a curable resin component film with a thickness of 5 μm (resin Floor).

[Production of laminated film for temporary fixing material] ＜Production of heat-insulating resin layer＞ In the preparation of the heat insulating resin layer, the varnish of the curable resin component prepared in the preparation of the curable resin component is used. Using a precision coater, apply a curable resin component varnish to a thickness of 1 μm on one of the main surfaces of a glass slide (size: 40 mm×40 mm, thickness: 0.8 μm) as a support member Heat the entire surface of the film at 90°C for 10 minutes to dry and remove the solvent, thereby fabricating a support member including a heat-insulating resin layer with a thickness of 1 μm.

<Preparation of the light-absorbing layer> On the heat-insulating resin layer of the supporting member including the heat-insulating resin layer, a light-absorbing layer with titanium as the first conductor layer and copper as the second conductor layer is produced by sputtering to obtain a self-supporting member The sequence includes a heat-insulating resin layer and a support member of the light absorption layer. Furthermore, the light absorbing layer is made by the following method: pre-treatment by reverse sputtering (Ar flow rate: 1.2×10 ^-2 Pa·m ³ /s (70 sccm), radio frequency, RF) After power: 300 W, time: 300 seconds), RF sputtering was performed under the processing conditions shown in Table 1 to make the thickness of the titanium layer/copper layer 50 nm/200 nm.

[Table 1] Sputtering treatment Ar flow rate power Treatment 1 (production of titanium layer) 1.2×10 ^-2 Pa·m ³ /s (70 sccm) 2000 W Treatment 2 (production of copper layer) 1.2×10 ^-2 Pa·m ³ /s (70 sccm) 2000 W

＜Production of resin layer＞ The curable resin component film with a thickness of 5 μm produced above was cut out to 40 mm×40 mm. The cut-out curable resin component film is arranged on the light absorbing layer of the supporting member including the heat insulating resin layer and the light absorbing layer in sequence from the supporting member, and vacuum lamination is performed to produce a film set on the supporting member , The laminated film for temporary fixing material of Example 1 having a heat-insulating resin layer containing a curable resin component, a light absorption layer, and a resin layer containing a curable resin component in this order.

[Production of laminated body] Mount a semiconductor wafer (size: 10 mm×10 mm, thickness: 150 μm) as a semiconductor component on the resin layer of the curable resin component film of the obtained laminated film for temporary fixing material, and heat it at 180°C for 1 hour It is thermally cured under the conditions to obtain a thermal insulation layer, a light absorption layer, and a light-absorbing layer composed of a support member, a resin layer containing a curable resin component, and a cured product containing a curable resin component. The resin layer of the component film is converted into the laminated body of Example 1 including the cured resin layer of the curable resin component film and the semiconductor member.

(Example 2) In the production of the curable resin component film, a curable resin component film with a thickness of 20 μm is produced, and a heat insulation resin layer with a thickness of 10 μm is formed in the production of the heat insulation resin layer to produce a heat insulation layer with a thickness of 10 μm. Except that, in the same manner as in Example 1, the laminated film for temporary fixing material and the laminated body of Example 2 were produced.

(Example 3) In the production of the curable resin component film, a curable resin component film with a thickness of 80 μm is produced, and a heat-insulating resin layer with a thickness of 80 μm is formed in the production of the heat-insulating resin layer to produce a heat-insulating layer with a thickness of 80 μm. Except that, in the same manner as in Example 1, a laminated film for a temporary fixing material and a laminated body of Example 3 were produced.

(Comparative example 1) Except that the heat insulating layer was not provided, the laminated film for temporary fixing material and the laminated body of Comparative Example 1 were produced in the same manner as in Example 1.

(Comparative example 2) Except that the heat insulating layer was not provided, in the same manner as in Example 2, a laminated film for a temporary fixing material and a laminated body of Comparative Example 2 were produced.

(Comparative example 3) Except that the heat insulating layer was not provided, the laminated film for temporary fixing material and the laminated body of Comparative Example 3 were produced in the same manner as in Example 3.

<Peelability test> Three laminates were prepared respectively. Using xenon lamp, under strong irradiation conditions of applied voltage 3700 V, pulse width 200 μs, irradiation distance 50 mm, irradiation times, and irradiation time 200 μs; applied voltage 3500 V, pulse width 200 μs, irradiation distance 50 mm, and irradiation times One time and medium irradiation conditions of 200 μs irradiation time; and three irradiation conditions of applied voltage 2700 V, pulse width 1000 μs, irradiation distance 50 mm, irradiation times once, and irradiation time 200 μs weak irradiation conditions respectively to the laminated body Irradiation was performed to evaluate the peelability of the self-supporting member. The xenon lamp used is S2300 manufactured by Xenon (wavelength range: 270 nm to near infrared region, irradiation energy per unit area: 0.51 J/cm ² (predicted value, strong irradiation conditions), 0.45 J/cm ² ( Predicted value, medium irradiation condition), 0.27 J/cm ² (predicted value, weak irradiation condition), xenon lamp irradiation is performed from the support member (slide glass) side of the laminate. The irradiation distance is the light source and the glass slide The distance of the stage. Regarding the evaluation of the peelability test, the condition that the semiconductor wafer is naturally peeled from the glass slide after the xenon lamp irradiation is evaluated as "A". When the tweezers are inserted between the semiconductor wafer and the glass slide, the semiconductor wafer is not In the case of damage, separation or non-separation was evaluated as "B." The results are shown in Table 1.

[Table 2] Example 1 Comparative example 1 Example 2 Comparative example 2 Example 3 Comparative example 3 Insulation thickness (μm) 1 - 10 - 80 - Light absorption layer thickness (nm) The first light absorption layer (titanium) 50 50 50 50 50 50 The second light absorption layer (copper) 200 200 200 200 200 200 Thickness of cured resin layer (μm) 5 5 20 20 80 80 Peel test Strong irradiation conditions (0.51 J/cm ² ) A A A A A A Medium irradiation conditions (0.45 J/cm ² ) A B A B A B Weak irradiation conditions (0.27 J/cm ² ) A B A B A B

As shown in Table 2, the laminates of Examples 1 to 3 with a heat insulating layer are compared with the laminates of Comparative Examples 1 to 3 without a heat insulating layer, even when the irradiation energy is reduced. The releasability of the support member is also excellent. Based on the above results, it was confirmed that the semiconductor device manufacturing method of the present invention can easily separate the temporarily fixed semiconductor member from the supporting member, and can reduce the irradiation energy required when separating the temporarily fixed semiconductor member from the supporting member .

10: Supporting member 30: Temporarily fix the material precursor layer 30c: Temporarily fix the material layer 30c': Temporarily fix the residue of the material layer 32: Light absorption layer 34: Resin layer 34c: Cured resin layer 40: Semiconductor components 41: Redistribution layer 42: Processing semiconductor components 44: Through electrode 50: Sealing layer 60: Semiconductor components 70: Insulation layer 100, 300, 310, 320, 330: laminated body A: Direction

1(a) and 1(b) are schematic cross-sectional views for explaining an embodiment of the method of manufacturing a semiconductor device of the present invention, and FIGS. 1(a) and 1(b) are schematic cross-sectional views showing each step Figure. 2(a) and 2(b) are schematic cross-sectional views showing one embodiment of a precursor layer of a temporary fixing material. Figures 3(a), 3(b), 3(c), and 3(d) show an embodiment of a laminate formed using the temporary fixing material precursor layer shown in Figure 2(a) Schematic sectional view. 4(a) and 4(b) are schematic cross-sectional views for explaining one embodiment of the method of manufacturing a semiconductor device of the present invention using the laminate shown in FIG. 3(d), and FIGS. 4(a) and Fig. 4(b) is a schematic cross-sectional view showing each step. 5(a), 5(b), and 5(c) are schematic cross-sectional views for explaining another embodiment of the method of manufacturing the laminate shown in FIG. 1(a), and FIG. 5(a) Fig. 5(b) and Fig. 5(c) are schematic cross-sectional views showing each step.

10: Supporting member

30c: Temporarily fix the material layer

30c': Temporarily fix the residue of the material layer

40: Semiconductor components

70: Insulation layer

100: layered body

A: Direction

Claims (13)

A method for manufacturing a semiconductor device includes: The preparation step is to prepare a laminated body in which a support member, a heat insulating layer, a temporary fixing material layer that absorbs light and generates heat, and a semiconductor member are sequentially laminated; and In the separating step, light is irradiated to the temporary fixing material layer in the laminate to separate the semiconductor member from the support member. The method for manufacturing a semiconductor device according to claim 1, wherein the temporary fixing material layer has a light absorption layer that absorbs light and generates heat, and a cured resin layer containing a cured product of a curable resin component, The laminated body is a laminated body in which the support member, the heat insulating layer, the light absorption layer, the cured resin layer, and the semiconductor member are laminated in this order. The method for manufacturing a semiconductor device according to the first or second patent application, wherein the light source in the separation step is a xenon lamp. The method for manufacturing a semiconductor device according to any one of the claims 1 to 3, wherein the light in the separation step is light including at least infrared light. The method of manufacturing a semiconductor device according to any one of the claims 1 to 4, wherein the separating step is a step of irradiating the temporary fixing material layer with the light via the supporting member. A laminated film for temporary fixing materials, used to temporarily fix semiconductor components to supporting members, and The laminated film for a temporary fixing material has a heat insulation layer and a light absorption layer which absorbs light and generates heat. The laminated film for temporary fixing material as described in the scope of patent application, which further has a resin layer containing a curable resin component, and It has the heat insulating layer, the light absorption layer, and the resin layer in this order. The laminated film for temporary fixing material as described in item 7 of the scope of patent application, which further has a supporting member, and It has the support member, the heat insulating layer, the light absorption layer, and the resin layer in this order. The laminated film for temporary fixing material as described in item 6 of the scope of patent application, which further has a supporting member, and It has the support member, the heat insulating layer, and the light absorption layer in this order. A laminated film for temporary fixing materials, used to temporarily fix semiconductor components to supporting members, and The laminated film for temporary fixing materials has a heat-insulating resin layer containing a curable resin component and a light-absorbing layer that absorbs light and generates heat. The laminated film for temporary fixing material as described in the tenth patent application, which further has a resin layer containing a curable resin component, and It has the heat insulating resin layer, the light absorption layer, and the resin layer in this order. The laminated film for temporary fixing material as described in item 11 of the scope of patent application, which further has a supporting member, and It has the support member, the heat insulating resin layer, the light absorption layer, and the resin layer in this order. The laminated film for temporary fixing material as described in item 10 of the scope of patent application, which further has a supporting member, and It has the support member, the heat insulating resin layer, and the light absorption layer in this order.

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