TWI670747B - High-frequency plasma processing device and high-frequency plasma processing method - Google Patents
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Abstract
提供一種難以在接觸於施加有高頻電力之電極 之絕緣物的部分產生沿面放電的高頻電漿處理裝置及高頻電漿處理方法。 Provide an electrode that is difficult to contact with high-frequency power A high-frequency plasma processing device and a high-frequency plasma processing method in which a part of the insulator generates creeping discharge.
一種具有接觸於絕緣物(17)的電極(13)， 而對電極(13)施加高頻電力，藉由藉此而產生的電漿，來對基板(G)進行電漿處理的高頻電漿處理裝置，係具備有：處理室(4)，對基板(G)進行電漿處理；電極收容部(3)，收容接觸於絕緣物(17)之狀態的電極(13)；高頻電源(15)，對電極(13)施加高頻電力；及濕度調整手段(58)，以在電極收容部(3)內不產生沿面放電的方式，調整電極收容部(3)內的濕度。 An electrode (13) having contact with an insulator (17), A high-frequency plasma processing device that applies high-frequency power to the electrode (13) and performs plasma processing on the substrate (G) by using the generated plasma, includes a processing chamber (4), The substrate (G) is subjected to a plasma treatment; the electrode receiving section (3) receives the electrode (13) in a state in contact with the insulator (17); the high-frequency power source (15) applies high-frequency power to the electrode (13); and The humidity adjustment means (58) adjusts the humidity in the electrode accommodation portion (3) so that no creeping discharge occurs in the electrode accommodation portion (3).
Description
本發明，係關於使用高頻電力，對被處理基板施加電漿處理的高頻電漿處理裝置及高頻電漿處理方法。 The present invention relates to a high-frequency plasma processing apparatus and a high-frequency plasma processing method for applying a high-frequency power to a plasma treatment on a substrate to be processed.
在半導體基板或液晶顯示裝置(LCD)等之平板顯示器(FPD)的製造工程中，係存在有對基板進行電漿蝕刻或成膜處理等之電漿處理的工程，為了進行像這樣的電漿處理，而使用電漿蝕刻裝置或電漿CVD裝置等的各種電漿處理裝置。作為電漿處理裝置，一般是使用高頻電力生成電漿者。 In a manufacturing process of a flat panel display (FPD) such as a semiconductor substrate or a liquid crystal display device (LCD), there is a process of performing plasma processing such as plasma etching or film forming processing of a substrate, and in order to perform a plasma such as this For processing, various plasma processing apparatuses such as a plasma etching apparatus or a plasma CVD apparatus are used. As a plasma processing apparatus, a person who generates plasma using high-frequency power is generally used.
作為使用高頻電力的電漿處理裝置，具有所謂能夠以高真空度獲得高密度之電漿之一大優點的感應耦合電漿(Inductively Coupled Plasma：ICP)處理裝置最近受到注目。 As a plasma processing apparatus using high-frequency power, an inductively coupled plasma (ICP) processing apparatus having one of the great advantages of being able to obtain a high-density plasma with a high degree of vacuum has recently attracted attention.
作為感應耦合電漿處理裝置，係已知：在構成收容被處理基板之處理容器頂壁之介電質窗的上側配置天線室，且在其中配置高頻天線，對處理容器內供給處理 氣體，並且對該高頻天線供給高頻電力，藉此，使感應耦合電漿產生於處理容器內，而藉由該感應耦合電漿對被處理基板施予預定的電漿處理者(例如專利文獻1)。 As an inductively coupled plasma processing apparatus, it is known to arrange an antenna chamber above a dielectric window constituting a top wall of a processing container that houses a substrate to be processed, and to arrange a high-frequency antenna therein to supply processing to the processing container. Gas, and supplying high-frequency power to the high-frequency antenna, thereby generating an inductive coupling plasma in the processing container, and applying a predetermined plasma processor to the substrate to be processed by the inductive coupling plasma (for example, a patent Reference 1).
[專利文獻1]日本特開2004-55895號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2004-55895
然而，發現存在有下述情形：天線室內的高頻天線雖被絕緣物壓制，但在將高頻電力施加至高頻天線時，沿面放電主要產生在絕緣物的部分。當產生沿面放電時，則有絕緣物之劣化加劇，而導致絕緣破壞等之可能性。 However, it was found that although the high-frequency antenna in the antenna room was suppressed by the insulator, when high-frequency power was applied to the high-frequency antenna, creeping discharge was mainly generated in the insulator portion. When creeping discharge occurs, there is a possibility that the deterioration of the insulator is intensified, leading to insulation damage and the like.
像這樣的沿面放電，係並不限於感應耦合電漿處理裝置，在平行平板型的電容耦合電漿處理裝置中，有亦會在壓制被施加有高頻電力之電極之絕緣物的部分產生沿面放電之情形。 The creeping discharge like this is not limited to the inductively coupled plasma processing apparatus. In the parallel flat type capacitively coupled plasma processing apparatus, creeping is also generated in the part where the insulator of the electrode to which high-frequency power is applied is pressed. Discharge situation.
本發明，係有鑑於該情事進行研究者，以提供一種難以在接觸於施加有高頻電力之電極之絕緣物的部分產生沿面放電的高頻電漿處理裝置及高頻電漿處理方法為目的。 The present invention has been made in view of the circumstances, and an object of the present invention is to provide a high-frequency plasma processing apparatus and a high-frequency plasma processing method that are difficult to generate creeping discharge in a portion in contact with an insulator applied with an electrode to which high-frequency power is applied. .
為了解決上述課題，而本發明之第1觀點，係提供一種高頻電漿處理裝置，其具有接觸於絕緣物的電極，而對前述電極施加高頻電力，藉由藉此而產生的電漿，來對基板進行電漿處理，該高頻電漿處理裝置，其特徵係，具備有：處理室，對基板進行電漿處理；電極收容部，收容接觸於前述絕緣物之狀態的前述電極；高頻電源，對前述電極施加高頻電力；及濕度調整手段，以在前述電極收容部內不產生沿面放電的方式，調整前述電極收容部內的濕度。 In order to solve the above-mentioned problems, a first aspect of the present invention is to provide a high-frequency plasma processing apparatus having an electrode in contact with an insulator, applying high-frequency power to the electrode, and a plasma generated by the electrode. To perform plasma processing on a substrate, the high-frequency plasma processing apparatus is characterized by comprising: a processing chamber for plasma processing of the substrate; and an electrode receiving section for accommodating the electrode in contact with the insulator; A high-frequency power source that applies high-frequency power to the electrodes; and a humidity adjustment means that adjusts the humidity in the electrode accommodation portion so that no creeping discharge occurs in the electrode accommodation portion.
在上述第1觀點中，作為前述濕度調整手段，可使用具有對前述電極收容部供給乾燥氣體的乾燥氣體供給機構者。 In the first aspect described above, as the humidity adjustment means, a person having a dry gas supply mechanism for supplying a dry gas to the electrode housing portion may be used.
更亦可具備有：濕度計，測定前述電極收容部內的濕度；及放電防止部，在從前述乾燥氣體供給機構將乾燥氣體供給至前述電極收容部之際，當前述濕度計的測定值超過預定閾值時，不允許前述高頻電源之作動，而當前述濕度計的測定值為前述閾值以下時，允許前述高頻電源之作動。 It may further include a hygrometer that measures the humidity in the electrode storage section; and a discharge prevention section that supplies dry gas from the dry gas supply mechanism to the electrode storage section when the measured value of the hygrometer exceeds a predetermined value. At the threshold, the operation of the high-frequency power supply is not allowed, and when the measurement value of the hygrometer is below the threshold, the operation of the high-frequency power supply is allowed.
又，更亦可具備有：流量感測器，測定將前述乾燥氣體供給至前述電極收容部時的流量；及放電防止部，在從乾燥氣體供給機構使乾燥氣體以預定流量流至前述電極收容部時，予以設定直至前述電極收容部內之濕度成為預定閾值以下的必要時間，在前述流量感測器成為前 述預定流量之後，直至前述必要時間經過為止，係不允許前述高頻電源之作動，在前述必要時間經過後，允許前述高頻電源之作動。在該情況下，前述放電防止部，係藉由前述流量感測器檢測乾燥氣體的流量異常，在該異常時間超過預定時間時，可不允許前述高頻電源之作動。 Furthermore, a flow sensor may be provided to measure a flow rate when the dry gas is supplied to the electrode storage portion, and a discharge prevention unit may flow the dry gas from the dry gas supply mechanism to the electrode storage at a predetermined flow rate. Set the time required until the humidity in the electrode storage part becomes below a predetermined threshold, before the flow sensor becomes After the predetermined flow rate is reached, the operation of the high-frequency power supply is not allowed until the necessary time has elapsed, and the operation of the high-frequency power supply is allowed after the necessary time has elapsed. In this case, the discharge prevention unit detects the abnormality of the flow rate of the dry gas by the flow rate sensor, and when the abnormal time exceeds a predetermined time, the operation of the high-frequency power supply may not be allowed.
可構成為：前述高頻電漿處理裝置，係感應耦合電漿處理裝置，前述電極，係在前述處理室內形成感應磁場的高頻天線，前述電極收容部，係設置於前述處理室之上方，且收容前述高頻天線的天線室。 It may be configured that the high-frequency plasma processing device is an inductively coupled plasma processing device, the electrode is a high-frequency antenna that forms an induction magnetic field in the processing chamber, and the electrode receiving portion is provided above the processing chamber. And an antenna room for accommodating the high-frequency antenna.
本發明之第2觀點，係提供一種高頻電漿處理方法，其係從高頻電源對接觸於絕緣物的電極施加高頻電力，藉由藉此而產生的電漿，來對處理室內的基板進行電漿處理，該高頻電漿處理方法，其特徵係，將接觸於前述絕緣物之狀態的前述電極收容於電極收容部，一邊以在前述電極收容部內不產生沿面放電的方式，調整前述電極收容部內的濕度，一邊進行電漿處理。 According to a second aspect of the present invention, there is provided a high-frequency plasma processing method in which high-frequency power is applied from a high-frequency power source to an electrode in contact with an insulator, and the plasma generated by the high-frequency power is applied to a processing chamber. The substrate is subjected to plasma processing, and the high-frequency plasma processing method is characterized in that the electrode in a state in contact with the insulator is accommodated in an electrode accommodation portion, and is adjusted so that no creeping discharge occurs in the electrode accommodation portion. The humidity in the electrode storage portion was subjected to a plasma treatment.
在上述第2觀點中，前述濕度之調整，係可藉由對前述電極收容部供給乾燥氣體的方式來進行。 In the second aspect, the adjustment of the humidity may be performed by supplying a dry gas to the electrode housing portion.
在藉由濕度計來測定前述電極收容部內的濕度，而將乾燥氣體供給至前述電極收容部之際，當前述濕度計的測定值超過預定閾值時，不允許前述高頻電源之作動，而當前述濕度計的測定值為前述閾值以下時，允許前述高頻電源之作動。 When measuring the humidity in the electrode storage portion with a hygrometer and supplying dry gas to the electrode storage portion, when the measured value of the hygrometer exceeds a predetermined threshold, the operation of the high-frequency power supply is not allowed, and when When the measured value of the hygrometer is below the threshold, the operation of the high-frequency power supply is allowed.
又，在藉由流量感測器測定將前述乾燥氣體 供給至前述電極收容部時的流量，而使乾燥氣體以預定流量流至前述電極收容部時，事先設定直至前述電極收容部內之濕度成為預定閾值以下的必要時間，在前述流量感測器成為前述預定流量之後，直至前述必要時間經過為止，係不允許前述高頻電源之作動，在前述必要時間經過後，允許前述高頻電源之作動。在該情況下，藉由前述流量感測器檢測乾燥氣體的流量異常，在該異常時間超過預定時間時，可不允許前述高頻電源之作動。 The dry gas is measured by a flow sensor. The flow rate when supplied to the electrode storage section, and when the dry gas flows to the electrode storage section at a predetermined flow rate, a necessary time is set in advance until the humidity in the electrode storage section becomes below a predetermined threshold, and the flow sensor becomes the foregoing. After the predetermined flow rate, the operation of the high-frequency power supply is not allowed until the necessary time has elapsed, and the operation of the high-frequency power supply is allowed after the necessary time has elapsed. In this case, the abnormality of the flow rate of the dry gas is detected by the flow sensor, and when the abnormal time exceeds a predetermined time, the operation of the high-frequency power supply may not be allowed.
可構成為：前述高頻電漿，係感應耦合電漿，前述電極，係在前述處理室內形成感應磁場的高頻天線，前述電極收容部，係設置於前述處理室之上方，且收容前述高頻天線的天線室。 It may be configured that the high-frequency plasma is an inductively coupled plasma, the electrodes are high-frequency antennas that form an induction magnetic field in the processing chamber, and the electrode receiving portion is disposed above the processing chamber and accommodates the high-frequency plasma. Room with high-frequency antenna.
根據本發明，由於設置有濕度調整手段(該濕度調整手段，係以在前述電極收容部內不產生沿面放電的方式，調整電極收容部內的濕度)，因此，可極有效地抑制在電極收容部內產生沿面放電。 According to the present invention, since the humidity adjustment means (the humidity adjustment means adjusts the humidity in the electrode accommodation portion in such a manner that no creeping discharge is generated in the electrode accommodation portion), it is possible to extremely effectively suppress the generation in the electrode accommodation portion. Discharge along the surface.
1‧‧‧本體容器 1‧‧‧Body Container
2‧‧‧介電質壁 2‧‧‧ Dielectric Wall
3‧‧‧天線室 3‧‧‧ Antenna Room
4‧‧‧處理室 4‧‧‧ treatment room
13‧‧‧高頻天線 13‧‧‧HF Antenna
13a‧‧‧天線線 13a‧‧‧antenna cable
14‧‧‧匹配器 14‧‧‧ Matcher
15‧‧‧高頻電源 15‧‧‧High-frequency power
17‧‧‧絕緣物 17‧‧‧Insulators
19‧‧‧供電線 19‧‧‧ Power line
20‧‧‧處理氣體供給系統 20‧‧‧Process gas supply system
23‧‧‧載置台 23‧‧‧mounting table
30‧‧‧排氣裝置 30‧‧‧Exhaust
51‧‧‧乾空氣供給源 51‧‧‧ dry air supply source
52‧‧‧乾空氣配管 52‧‧‧ dry air piping
53‧‧‧流量調節閥 53‧‧‧Flow regulating valve
54‧‧‧流量感測器 54‧‧‧Flow sensor
55‧‧‧排氣埠 55‧‧‧ exhaust port
56‧‧‧濕度計 56‧‧‧ Hygrometer
57‧‧‧放電防止部 57‧‧‧Discharge prevention department
58‧‧‧乾空氣供給機構 58‧‧‧Dry air supply mechanism
60‧‧‧全體控制部 60‧‧‧Overall Control Department
G‧‧‧基板 G‧‧‧ substrate
[圖1]表示本發明之一實施形態之高頻電漿處理裝置的剖面圖。 [FIG. 1] A cross-sectional view showing a high-frequency plasma processing apparatus according to an embodiment of the present invention.
[圖2]表示使用於確認沿面放電之實驗之試片之構造 的剖面圖。 [Figure 2] Structure of a test piece used in experiments to confirm creeping discharge Section view.
[圖3]表示天線室內之濕度與耐壓之關係的圖。 Fig. 3 is a diagram showing the relationship between humidity and withstand voltage in an antenna room.
[圖4](a)，係表示改變溫度後之水蒸汽量(絕對濕度)與耐壓之關係的圖；(b)，係表示改變溫度後之濕度(相對濕度)與耐壓之關係的圖。 [Figure 4] (a) is a graph showing the relationship between the amount of water vapor (absolute humidity) and pressure resistance after changing the temperature; (b) is a graph showing the relationship between the humidity (relative humidity) and pressure resistance after changing the temperature Illustration.
[圖5]表示電極間距離為20mm及30mm時之濕度與耐壓之關係的圖。 FIG. 5 is a graph showing the relationship between the humidity and the withstand voltage when the distance between the electrodes is 20 mm and 30 mm.
[圖6]表示在天線室之排氣埠設置衝孔板時之乾空氣供給時間與濕度之關係的圖。 [Fig. 6] A diagram showing the relationship between the dry air supply time and the humidity when a punching plate is provided in the exhaust port of the antenna room.
[圖7]表示在天線室之排氣埠設置排氣風扇時之乾空氣供給時間與濕度之關係的圖。 [Fig. 7] A diagram showing the relationship between the dry air supply time and the humidity when an exhaust fan is installed in the exhaust port of the antenna room.
[圖8]表示使乾空氣之壓力改變時之乾空氣的供給時間與濕度之關係的圖。 FIG. 8 is a graph showing the relationship between the supply time of dry air and humidity when the pressure of dry air is changed.
以下，參閱添加圖面來說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described with reference to drawings.
圖1，係表示本發明之一實施形態之高頻電漿處理裝置的剖面圖。 FIG. 1 is a sectional view showing a high-frequency plasma processing apparatus according to an embodiment of the present invention.
該高頻電漿處理裝置，係構成為感應耦合電漿裝置，且使用於在例如液晶顯示器(LCD)、電致發光(Electro Luminescence；EL)顯示器等的FPD用基板上形成薄膜電晶體時的金屬膜、ITO膜、氧化膜等的蝕刻或光阻膜的灰化處理。 This high-frequency plasma processing device is configured as an inductively coupled plasma device and is used when a thin film transistor is formed on a substrate for FPD such as a liquid crystal display (LCD) or an electroluminescence (EL) display. Etching of metal film, ITO film, oxide film, etc., or ashing of photoresist film.
該高頻電漿處理裝置，係具有由導電性材料，例如內壁面被陽極氧化處理的鋁所構成的角筒形狀之氣密的本體容器1。該本體容器1係組裝成可分解，且藉由接地線1a進行電性接地。本體容器1，係藉由介電質壁(介電質窗)2，上下區隔成天線室3及處理室4。因此，介電質壁2，係具有處理室4之頂壁的功能。介電質壁2，係由Al2O3等的陶瓷、石英等所構成。 This high-frequency plasma processing apparatus is a hermetically sealed main body container 1 having a rectangular tube shape made of a conductive material such as aluminum whose inner wall surface is anodized. The main body container 1 is assembled to be disassembled, and is electrically grounded through a ground wire 1a. The main body container 1 is divided into an antenna chamber 3 and a processing chamber 4 by a dielectric wall (dielectric window) 2. Therefore, the dielectric wall 2 functions as the top wall of the processing chamber 4. The dielectric wall 2 is made of ceramics such as Al 2 O 3 , quartz, and the like.
在介電質壁2的下側部分，係嵌入有處理氣體供給用的淋浴頭框體11。淋浴頭框體11，係例如設成為十字狀，具有作為從下方支撐介電質壁2之梁的功能。介電質壁2，係亦可藉由淋浴頭框體11予以分割。淋浴頭框體11，係藉由複數根吊桿(未圖示)而吊於本體容器1的頂棚。 A shower head frame 11 for processing gas supply is embedded in a lower portion of the dielectric wall 2. The shower head frame 11 is, for example, formed in a cross shape, and has a function as a beam supporting the dielectric wall 2 from below. The dielectric wall 2 can also be divided by the shower head frame 11. The shower head frame 11 is suspended from the ceiling of the main body container 1 by a plurality of hangers (not shown).
該淋浴頭框體11，係由導電性材料所構成。該淋浴頭框體11，係電性接地。 The shower head frame 11 is made of a conductive material. The shower head frame 11 is electrically grounded.
在該淋浴頭框體11，係形成有水平延伸的氣體流路12，在該氣體流路12，係連通有朝下方延伸的複數個氣體吐出孔12a。另一方，在介電質壁2的上面中央，係以與該氣體流路12連通的方式，設置有氣體供給管20a。氣體供給管20a，係從本體容器1之頂棚朝其外側貫通，且連接於包含有處理氣體供給源及閥系統等的處理氣體供給系統20。因此，在電漿處理中，從處理氣體供給系統20所供給的處理氣體，係經由氣體供給管20a被供給至淋浴頭框體11內，而從其下面的氣體吐出孔12a被吐出至處理室4 內。 A horizontally extending gas flow path 12 is formed in the shower head housing 11, and a plurality of gas discharge holes 12 a extending downward are communicated in the gas flow path 12. On the other hand, a gas supply pipe 20 a is provided at the center of the upper surface of the dielectric wall 2 so as to communicate with the gas flow path 12. The gas supply pipe 20a penetrates from the ceiling of the main body container 1 to the outside thereof, and is connected to a processing gas supply system 20 including a processing gas supply source, a valve system, and the like. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied into the shower head frame 11 through the gas supply pipe 20a, and the gas discharge hole 12a from the lower side is discharged to the processing chamber 4 Inside.
在本體容器1之天線室3的側壁3a與處理室4的側壁4a之間，係設置有朝內側突出的支撐棚架5，在該支撐棚架5上載置有介電質壁2。 Between the side wall 3 a of the antenna chamber 3 of the main body container 1 and the side wall 4 a of the processing chamber 4, a support shelf 5 protruding inward is provided, and a dielectric wall 2 is placed on the support shelf 5.
在天線室3內，係設置有作為高頻電極的高頻(RF)天線13。在高頻天線13，係連接有供電線19，在供電線，係連接有匹配器14及高頻電源15。高頻天線13，係構成為例如呈漩渦狀的平面天線。構成該高頻天線13的天線線13a，係被支撐於絕緣物17，並且被絕緣物17壓制，從而形成為相互絕緣。而且，從高頻電源15將例如頻率為13.56MHz的高頻電力供給至高頻天線13，藉此，在處理室4內生成感應電場，藉由該感應電場使從淋浴頭框體11所供給的處理氣體被電漿化。絕緣物17的材料並不特別限定，可適當地使用剛性比較高的樹脂材料，例如聚醚醯亞胺(PEI)樹脂(商品名：Ultem(註冊商標))。 A high-frequency (RF) antenna 13 is provided in the antenna chamber 3 as a high-frequency electrode. A power supply line 19 is connected to the high-frequency antenna 13, and a matching device 14 and a high-frequency power supply 15 are connected to the power supply line. The high-frequency antenna 13 is configured as, for example, a spiral planar antenna. The antenna line 13a constituting the high-frequency antenna 13 is supported by the insulator 17 and pressed by the insulator 17 so as to be insulated from each other. In addition, high-frequency power having a frequency of, for example, 13.56 MHz is supplied from the high-frequency power source 15 to the high-frequency antenna 13, thereby generating an induced electric field in the processing chamber 4, and using the induced electric field to supply the power from the shower head housing 11 The process gas is plasmatized. The material of the insulator 17 is not particularly limited, and a resin material having a relatively high rigidity, such as a polyetherimide (PEI) resin (trade name: Ultem (registered trademark)) can be appropriately used.
在處理室4內的下方，係以隔著介電質壁2且與高頻天線13相對向的方式，設置有用於載置矩形狀之FPD用基板(以下僅稱為基板)G的載置台23。載置台23，係由導電性材料，例如表面被陽極氧化處理的鋁所構成。被載置於載置台23的基板G，係藉由靜電夾盤(未圖示)予以吸附保持。 A mounting table for mounting a rectangular FPD substrate (hereinafter simply referred to as a substrate) G is provided below the processing chamber 4 so as to face the high-frequency antenna 13 across the dielectric wall 2. twenty three. The mounting table 23 is made of a conductive material such as aluminum whose surface is anodized. The substrate G placed on the mounting table 23 is sucked and held by an electrostatic chuck (not shown).
載置台23，係被收納於絕緣體框24內，而且被中空的支柱25予以支撐。支柱25，係貫通本體容器1的底部，且被配設於本體容器1外的升降機構(未圖示)所支 撐，在進行基板G之搬出入時，藉由升降機構來將載置台23驅動於上下方向。在收納載置台23的絕緣體框24與本體容器1的底部之間，係配設有氣密地包圍支柱25的波紋管26，藉此，即使載置台23上下移動，亦可保證處理室4內的氣密性。又，在處理室4的側壁4a，係設置有用於搬入搬出基板G的搬入搬出口27a及將其予以開關的閘閥27。 The mounting table 23 is housed in an insulator frame 24 and is supported by a hollow pillar 25. The pillar 25 penetrates the bottom of the main body container 1 and is supported by a lifting mechanism (not shown) arranged outside the main body container 1. When the substrate G is carried in and out, the mounting table 23 is driven in the vertical direction by a lifting mechanism. A corrugated tube 26 is provided between the insulator frame 24 accommodating the mounting table 23 and the bottom of the main body container 1 so as to air-tightly surround the support post 25. This allows the processing chamber 4 to be secured even if the mounting table 23 moves up and down. Air tightness. The side wall 4a of the processing chamber 4 is provided with a loading / unloading port 27a for loading and unloading the substrate G and a gate valve 27 for opening and closing the same.
在載置台23，係藉由設置於中空之支柱25內的供電線25a，經由匹配器28而連接有高頻電源29。該高頻電源29，係在電漿處理中，將偏壓用的高頻電力例如頻率為6MHz的高頻電力施加至載置台23。藉由由該偏壓用之高頻電力所產生的自給偏壓，使生成於處理室4內之電漿中的離子有效地被引入至基板G。 A high-frequency power source 29 is connected to the mounting table 23 via a power supply line 25 a provided in the hollow pillar 25 via a matching device 28. The high-frequency power source 29 applies a high-frequency power for bias voltage, for example, a high-frequency power having a frequency of 6 MHz, to the mounting table 23 during plasma processing. By the self-supplied bias generated by the high-frequency power for the bias, ions in the plasma generated in the processing chamber 4 are efficiently introduced into the substrate G.
而且，在載置台23內，為了控制基板G的溫度，而設置有由陶瓷加熱器等的加熱手段或冷媒流路等所構成的溫度控制機構、及溫度感測器(皆未圖示)。對於該些機構或構件的配管或配線，係皆通過中空的支柱25而往本體容器1外導出。 In addition, in the mounting table 23, in order to control the temperature of the substrate G, a temperature control mechanism including a heating means such as a ceramic heater, a refrigerant flow path, and the like, and a temperature sensor (not shown) are provided. The piping and wiring of these mechanisms and components are all led out of the main body container 1 through the hollow pillar 25.
在處理室4的底部，係經由排氣管31，連接有包含真空泵等的排氣裝置30。藉由該排氣裝置30來對處理室4進行排氣，電漿處理中，處理室4內，係被設定為預定的真空環境(例如1.33Pa)並加以維持。 An exhaust device 30 including a vacuum pump and the like is connected to the bottom of the processing chamber 4 via an exhaust pipe 31. The exhaust chamber 30 is used to exhaust the processing chamber 4. During the plasma processing, the inside of the processing chamber 4 is set to a predetermined vacuum environment (for example, 1.33 Pa) and maintained.
在被載置於載置台23之基板G的背面側，係形成有冷卻空間(未圖示)，且設置有用於供給He氣體(作為一定壓力的熱傳達用氣體)的He氣體流路41。如此一來， 藉由對基板G的背面側供給熱傳達用氣體的方式，可在真空下迴避基板G的溫度上昇或溫度變化。 A cooling space (not shown) is formed on the back side of the substrate G placed on the mounting table 23, and a He gas flow path 41 for supplying He gas (a gas for heat transfer at a constant pressure) is provided. As a result, By supplying the heat transfer gas to the back surface side of the substrate G, it is possible to avoid a temperature rise or temperature change of the substrate G under vacuum.
本實施形態的高頻電漿處理裝置，係具有作為調整天線室3內之濕度之濕度調整手段的乾空氣供給機構58。乾空氣供給機構58，係具有乾空氣供給源51、乾空氣配管52及流量調節閥53。在乾空氣供給機構58中，係從乾空氣供給源51經由乾空氣配管52，對天線室3內供給乾空氣，以流量調節閥53來調節乾空氣的流量，藉由此，可使天線室3內的濕度下降。 The high-frequency plasma processing apparatus according to this embodiment is provided with a dry air supply mechanism 58 as a humidity adjusting means for adjusting the humidity in the antenna chamber 3. The dry air supply mechanism 58 includes a dry air supply source 51, a dry air piping 52, and a flow control valve 53. In the dry air supply mechanism 58, the dry air is supplied from the dry air supply source 51 to the antenna chamber 3 through the dry air pipe 52, and the flow rate of the dry air is adjusted by the flow regulating valve 53, thereby enabling the antenna chamber to be adjusted. The humidity in 3 drops.
在乾空氣配管52，係設置有流量感測器54。流量感測器54，係被使用作為監視是否實際供給有必要量之乾空氣的監視手段。在天線室3，係設置有測定其中濕度的濕度計56。 The dry air piping 52 is provided with a flow sensor 54. The flow sensor 54 is used as a monitoring means for monitoring whether a necessary amount of dry air is actually supplied. The antenna room 3 is provided with a hygrometer 56 for measuring the humidity therein.
在天線室3，係設置有可進行開關的蓋體33，其側部，係設置排氣埠55。在排氣埠55，係形成為設置有用於遮蔽被供給至天線室3內之高頻的衝孔板或排氣風扇等，且可一邊極力抑制從外部流入高濕度之空氣，一邊進行排氣的構造。亦可不設置排氣埠55而使天線室3密閉。 The antenna chamber 3 is provided with a cover 33 capable of being opened and closed, and an exhaust port 55 is provided at a side portion thereof. The exhaust port 55 is formed with a punching plate or an exhaust fan for shielding the high-frequency supplied to the antenna chamber 3, and can exhaust air while suppressing the inflow of high-humidity air from the outside. The construction. The antenna chamber 3 may be closed without providing the exhaust port 55.
流量感測器54之資訊及濕度計56之資訊，係被輸入至放電防止部57，在乾空氣之流量為規定量以下時，或者天線室3內的濕度超過預定閾值時，以使高頻電源15不作動的方式，將連鎖訊號輸出至高頻電源15。而且，可從放電防止部57對流量調節閥53賦予控制信號。 The information of the flow sensor 54 and the information of the hygrometer 56 are input to the discharge prevention unit 57. When the flow rate of the dry air is less than a predetermined amount, or when the humidity in the antenna chamber 3 exceeds a predetermined threshold, the high frequency In a manner in which the power source 15 does not operate, the interlocking signal is output to the high-frequency power source 15. In addition, a control signal can be given to the flow control valve 53 from the discharge prevention unit 57.
高頻電漿處理裝置之各構成部，例如氣體供 給系統、高頻電源15及29、排氣裝置30等，係可藉由全體控制部60來予以控制。全體控制部60，係具有由微處理器(電腦)所構成的本體部、連接於本體部的使用者介面部及記憶部。使用者介面部，係由鍵盤或顯示器等所構成，該鍵盤是供操作員進行為了管理電漿處理裝置而輸入指令等的輸入操作，該顯示器是使電漿處理裝置的運轉狀況可視化顯示。記憶部，係儲存有用於藉由本體部之控制來實現在高頻電漿處理裝置所實行之各種處理的控制程式，或用於因應處理條件來使處理實行於電漿處理裝置之各構成部的程式亦即處理配方。處理配方等之程式，係被記憶於記憶部中的記憶媒體。記憶媒體，係亦可為內建於電腦之硬碟，或亦可為CDROM或快閃記憶體等的可攜帶性者。又，亦可從其他裝置經由例如專用回線來適當地傳送配方。而且，以來自使用者介面的指示等，從記憶部呼叫預定的處理配方，而藉由高頻電漿處理裝置執行預定處理。 Components of high-frequency plasma processing equipment, such as gas supply The power supply system, the high-frequency power sources 15 and 29, the exhaust device 30, and the like can be controlled by the overall control unit 60. The entire control unit 60 includes a main body portion composed of a microprocessor (computer), a user interface portion and a memory portion connected to the main body portion. The user interface is composed of a keyboard or a display, and the keyboard is used by an operator to perform input operations such as inputting instructions to manage the plasma processing apparatus. The display is a visual display of the operation status of the plasma processing apparatus. The memory section stores a control program for realizing various processes performed in the high-frequency plasma processing apparatus by controlling the main body section, or various constituent sections for performing processing in the plasma processing apparatus in accordance with the processing conditions. The program is the processing recipe. Programs for processing recipes and the like are stored in a storage medium in the storage section. The storage medium can be a hard disk built into the computer, or it can be a portable device such as CDROM or flash memory. In addition, the recipe may be appropriately transmitted from another device via, for example, a dedicated loop. Furthermore, a predetermined processing recipe is called from the memory section by an instruction from a user interface, etc., and the predetermined processing is performed by a high-frequency plasma processing apparatus.
接下來，說明使用如以上所構成之高頻電漿處理裝置，對基板G施予電漿處理，例如電漿蝕刻處理時之處理動作。 Next, a description will be given of a processing operation when the substrate G is subjected to a plasma treatment, for example, a plasma etching process, using the high-frequency plasma treatment device configured as described above.
首先，在將閘閥27打開的狀態下，從搬入搬出口27a藉由搬送機構(未圖示)將基板G搬入至處理室4內並載置於載置台23的載置面後，藉由靜電夾盤(未圖示)將基板G固定於載置台23上。接下來，使從處理氣體供給系統20被供給至處理室4內的處理氣體從淋浴頭框體11的氣體吐出孔12a吐出至處理室4內，並且藉由排氣裝置30，經 由排氣管31對處理室4內進行真空排氣，藉由此，將處理室內維持於例如0.66~26.6Pa左右的壓力環境。 First, in a state where the gate valve 27 is opened, the substrate G is transferred into the processing chamber 4 from the loading / unloading port 27a by a transfer mechanism (not shown) and placed on the mounting surface of the mounting table 23. A chuck (not shown) fixes the substrate G to the mounting table 23. Next, the processing gas supplied into the processing chamber 4 from the processing gas supply system 20 is discharged from the gas discharge hole 12 a of the shower head frame 11 into the processing chamber 4, and is discharged through the exhaust device 30 via The inside of the processing chamber 4 is evacuated by the exhaust pipe 31, thereby maintaining the processing chamber at a pressure environment of, for example, about 0.66 to 26.6 Pa.
又，此時，在基板G之背面側的冷卻空間中，為了迴避基板G之溫度上昇或溫度變化，而經由He氣體流路41供給作為熱傳達用氣體的He氣體。 At this time, in a cooling space on the rear surface side of the substrate G, He gas is supplied as a heat transfer gas through the He gas flow path 41 in order to avoid temperature rise or temperature change of the substrate G.
接下來，從高頻電源15將例如13.56MHz的高頻施加至作為高頻電極的高頻天線13，藉此，經由介電質壁2，在處理室4內生成均勻的感應電場。如此一來，藉由所生成的感應電場，在處理室4內的處理氣體會電漿化，從而生成高密度的感應耦合電漿。藉由該電漿，對基板G進行作為電漿處理之例如電漿蝕刻處理。 Next, a high-frequency power of, for example, 13.56 MHz is applied from the high-frequency power source 15 to the high-frequency antenna 13 as a high-frequency electrode, whereby a uniform induced electric field is generated in the processing chamber 4 through the dielectric wall 2. In this way, the generated induction electric field causes the processing gas in the processing chamber 4 to be plasmatized, thereby generating a high-density inductively coupled plasma. With this plasma, the substrate G is subjected to a plasma treatment such as a plasma etching process.
可是，在進行像這樣的電漿處理時，從以往成為如下問題：在天線室內，在作為高頻電極的高頻天線產生沿面放電。沿面放電，係指在對配置於絕緣物上的電極施加高電壓時，沿著絕緣物之表面產生放電的現象。亦即，在圖1之裝置中，在天線室3內，由於高頻天線13，係在被支撐於絕緣物17的狀態下安裝有天線線13a，因此，當從高頻電源15施加高電壓之高頻電力時，有沿著絕緣物17產生放電的情形。 However, when performing such a plasma treatment, conventionally, it has been a problem that creeping discharge occurs in a high-frequency antenna as a high-frequency electrode in an antenna room. Creepage discharge refers to the phenomenon that discharge occurs along the surface of an insulator when a high voltage is applied to an electrode disposed on the insulator. That is, in the device of FIG. 1, the antenna line 13 a is installed in the antenna room 3 because the high-frequency antenna 13 is supported by the insulator 17. Therefore, when a high voltage is applied from the high-frequency power source 15 In the case of high-frequency power, a discharge may occur along the insulator 17.
發現產生該沿面放電的原因，係設置有裝置之無塵室內的濕度高。亦即，無塵室內，係為了防止靜電，而維持為比較高的濕度，因此，發現在天線室中，易產生沿面放電。 It was found that the cause of the creeping discharge was that the humidity in the clean room provided with the device was high. In other words, in a clean room, relatively high humidity is maintained in order to prevent static electricity. Therefore, it has been found that creeping discharge is likely to occur in the antenna room.
在低濕度中，係在電極間產生空間放電。此 時之電極間的耐壓，係根據空間距離來決定，約為1kV/mm，當超過此時，則產生放電。但是，當濕度變高時，則空間放電之耐壓會下降，而且，當濕度變高時，則會以產生空間放電之電壓的1/5左右之電壓產生沿面放電。為了確認該情事，而如圖2所示，針對使用試片(該試片，係在絕緣物101上隔著20mm的間隔配置電極102，且在其上，配置具有縫隙103的絕緣物104)，在溫度25℃，對電極102間施加電壓，而產生沿面放電時的濕度進行實驗。另外，作為絕緣物101，104，係使用聚醚醯亞胺(PEI)樹脂(商品名：Ultem(註冊商標))。其結果經確認，如圖3所示，當濕度(相對濕度)超過50%時，則耐壓會急遽下降，而產生沿面放電。又，經確認：調查使溫度改變而水蒸汽量(絕對濕度)與耐電壓之關係的結果，如圖4(a)，(b)所示，在25℃，即使為讓耐壓下降(產生沿面放電)的水蒸汽量，當使溫度上升而使相對濕度下降時，則使耐壓維持為高。由此可發現，有助於沿面放電的是相對濕度，而非絕對濕度。而且，如圖5所示，發現：當成為產生沿面放電的濕度時，即使加大電極(導電體)間距離，耐壓亦不太會產生變化。 In low humidity, a space discharge occurs between the electrodes. this The withstand voltage between the electrodes at this time is determined according to the space distance, which is about 1 kV / mm. When this voltage is exceeded, a discharge occurs. However, when the humidity becomes high, the withstand voltage of the space discharge will decrease, and when the humidity becomes high, the creeping discharge will be generated at a voltage of about 1/5 of the voltage that generates the space discharge. In order to confirm this, as shown in FIG. 2, a test piece is used (the test piece is arranged on the insulator 101 with an electrode 102 spaced at a distance of 20 mm, and an insulator 104 having a gap 103 is arranged on the test piece) An experiment was performed at a temperature of 25 ° C. when a voltage was applied across the electrodes 102 to generate a creeping discharge. In addition, as the insulators 101 and 104, polyether fluorene imine (PEI) resin (trade name: Ultem (registered trademark)) was used. As a result, it was confirmed that, as shown in FIG. 3, when the humidity (relative humidity) exceeds 50%, the withstand voltage drops sharply, and creeping discharge occurs. Furthermore, it was confirmed that, as a result of investigating the relationship between the amount of water vapor (absolute humidity) and the withstand voltage by changing the temperature, as shown in Figs. 4 (a) and (b), at 25 ° C, When the amount of water vapor in the creeping discharge) increases the temperature and decreases the relative humidity, the withstand voltage is maintained high. It can be found that it is relative humidity rather than absolute humidity that contributes to creeping discharge. Furthermore, as shown in FIG. 5, it was found that when the humidity is a creeping discharge, even if the distance between the electrodes (conductors) is increased, the withstand voltage does not change much.
因此，在本實施形態中，係設置有作為調整天線室3內之濕度之濕度調整手段的乾空氣供給機構58，且以使形成為難以產生沿面放電之值的方式，來管理天線室3內的濕度(相對濕度)。 Therefore, in the present embodiment, a dry air supply mechanism 58 is provided as a humidity adjustment means for adjusting the humidity in the antenna chamber 3, and the inside of the antenna chamber 3 is managed so as to have a value that is difficult to cause creeping discharge. Humidity (relative humidity).
作為具體的手法，第1手法，係關閉天線室3 的蓋體33，從乾空氣供給源51使乾空氣以預定流量流動，藉由濕度計56來測定天線室3的濕度(相對濕度)，將該測定值發送至放電防止部57，從而在放電防止部57判斷中其濕度之測定值是否超過被設定作為不會在天線室3內沿面放電之閾值的值，直至該值成為閾值以下為止，係以使高頻電源15不作動的方式，從放電防止部57輸出連鎖訊號，若濕度計56之測定值成為閾值以下，則輸出連鎖解除訊號，將高頻電源15設成為可作動的狀態(就緒狀態)。 As a specific technique, the first technique is to close the antenna room 3 The lid 33 causes dry air to flow at a predetermined flow rate from the dry air supply source 51, measures the humidity (relative humidity) of the antenna chamber 3 with a hygrometer 56, and sends the measured value to the discharge prevention unit 57 to discharge the The prevention unit 57 determines whether the measured value of the humidity exceeds a threshold value set as a threshold value for preventing creeping in the antenna chamber 3 until the value becomes below the threshold value, so that the high-frequency power source 15 is not operated, and The discharge prevention unit 57 outputs an interlock signal, and when the measured value of the hygrometer 56 becomes less than a threshold value, an interlock release signal is output, and the high-frequency power supply 15 is set to an operable state (ready state).
在濕度計56的測定值成為閾值以下之後，亦可持續藉由濕度計56來測定天線室3內的濕度，並以使該測定值成為預定值(該預定值，係不超過被設定作為不會在天線室3內沿面放電之閾值的值)的方式，藉由放電防止部57來控制流量調整閥53，以便即時控制來自乾空氣供給源51之乾空氣的流量。 After the measured value of the hygrometer 56 becomes less than the threshold value, the humidity in the antenna chamber 3 can be continuously measured by the hygrometer 56 so that the measured value becomes a predetermined value (the predetermined value is set to not exceed The threshold value of the discharge along the surface in the antenna chamber 3) is controlled by the discharge prevention unit 57 to control the flow rate of the dry air from the dry air supply source 51 in real time.
第2手法，係在關閉天線室3的蓋體33，從乾空氣供給源51使乾空氣以預定流量流動時，事前掌握直至天線室3內之濕度成為預定閾值以下的時間，並事先設定於放電防止部57，實際上，在關閉天線室3的蓋體，從乾空氣供給源51供給乾空氣，而流量感測器54成為預定流量之後，直至設定時間經過為止，係以使高頻電源15不作動的方式，從放電防止部57輸出連鎖訊號，在設定時間經過後，輸出連鎖解除訊號，將高頻電源15設成為可作動的狀態(就緒狀態)。 The second method is to close the cover 33 of the antenna chamber 3, and when the dry air flows from the dry air supply source 51 at a predetermined flow rate, grasp the time until the humidity in the antenna chamber 3 becomes below a predetermined threshold, and set it in advance. The discharge prevention unit 57 actually closes the cover of the antenna chamber 3, supplies dry air from the dry air supply source 51, and the flow sensor 54 reaches a predetermined flow rate until a set time elapses, so that a high-frequency power supply In the non-actuated mode 15, an interlock signal is output from the discharge prevention unit 57. After a set time has elapsed, an interlock release signal is output, and the high-frequency power supply 15 is set to an operable state (ready state).
另一方面，在藉由流量感測器54來檢測乾空 氣流量異常(乾空氣未流動，或乾空氣之流量比規定量少)的情況下，當該異常時間超過預定時間時，由於濕度超過閾值，因此，事先在放電防止部57設定該時間，在異常時間超過設定時間時，以使高頻電源15不作動的方式(不使電漿生成)，輸出連鎖訊號。 On the other hand, dry air is detected by the flow sensor 54 When the air flow is abnormal (dry air is not flowing, or the dry air flow is less than the specified amount), when the abnormal time exceeds the predetermined time, the humidity exceeds the threshold. Therefore, set the time in the discharge prevention unit 57 in advance. When the abnormal time exceeds the set time, a chain signal is output so that the high-frequency power supply 15 is not operated (the plasma is not generated).
在該第2手法中，係可不使用在第1手法所使用的濕度計，來進行濕度管理。又，亦可同時使用第1手法與第2手法。 In this second method, the humidity management can be performed without using the hygrometer used in the first method. In addition, the first technique and the second technique may be used simultaneously.
使用以上的第1手法或第2手法來將天線室3內的濕度管理為閾值以下，藉由此，可極有效地抑制在天線室3內產生沿面放電的情形。 By using the above-mentioned first method or second method to control the humidity in the antenna chamber 3 to be equal to or less than a threshold value, it is possible to extremely effectively suppress occurrence of creeping discharge in the antenna chamber 3.
即使上述任一手法，亦如上述圖3所示，只要濕度(相對濕度)為50%以下，則可抑制沿面放電之發生。圖3之結果，係指使用聚醚醯亞胺(PEI)樹脂(商品名：Ultem(註冊商標))作為絕緣物之情形的結果，且發現下述情形：產生沿面放電的容易度，雖係根據絕緣物的材質(吸水率等)而變化，但與材料無關，大致上只要濕度為50%以下，則難以產生沿面放電。 Even with any of the above methods, as shown in FIG. 3 described above, as long as the humidity (relative humidity) is 50% or less, the occurrence of creeping discharge can be suppressed. The results in FIG. 3 refer to the results of a case where a polyether fluorene imine (PEI) resin (trade name: Ultem (registered trademark)) is used as an insulator, and it has been found that the ease of occurrence of creeping discharge, although the It varies depending on the material (water absorption, etc.) of the insulator, but it is not related to the material. As long as the humidity is 50% or less, creeping discharge is unlikely to occur.
因此，天線室3內之濕度雖只要設成為50%以下即可，但不受限於材料，從獲得穩定地抑制沿面放電之效果的觀點來看，濕度為40%以下為佳，而且30%以下為較佳。而且，從確實防止沿面放電的觀看來看，20%以下為更佳。 Therefore, although the humidity in the antenna chamber 3 may be set to 50% or less, it is not limited to materials. From the viewpoint of obtaining the effect of stably suppressing creeping discharge, the humidity is preferably 40% or less, and 30% The following is preferred. In addition, from the viewpoint of surely preventing creeping discharge, 20% or less is more preferable.
另外，作為絕緣物17，係吸水率較小者有難 以產生沿面放電的傾向，從該點來看，相較於吸水率為0.18~0.28%的Ultem(註冊商標)，雖然吸水率大致為0的鐵氟龍(註冊商標)者較佳，但由於鐵氟龍(註冊商標)，係熱膨脹大且柔軟的材料，因此，並不適於壓制高頻天線13的用途。 In addition, it is difficult for the insulator 17 to have a smaller water absorption rate. In order to cause creeping discharge, from this point of view, compared to Ultem (registered trademark) with a water absorption of 0.18 to 0.28%, although Teflon (registered trademark) with a water absorption of approximately 0 is better, but because Teflon (registered trademark) is a material that has a large thermal expansion and is soft. Therefore, it is not suitable for the purpose of suppressing the high-frequency antenna 13.
因此，對於壓制天線的用途而言，Ultem(註冊商標)者為佳。 Therefore, for the purpose of suppressing the antenna, Ultem (registered trademark) is preferred.
在本實施形態中，在管理天線室3內的濕度時，係在關閉天線室3之蓋體的狀態下，一邊從乾空氣供給源51供給乾空氣，一邊從設置有衝孔板或排氣風扇等的排氣埠55，對乾空氣進行排氣。藉此，可使天線室3內保持為足夠低的濕度。在圖6、7分別表示在排氣埠55設置衝孔板時，及設置排氣風扇時之濕度的經時變化。如該些圖所示，已知：在任一情況下，亦可以使乾空氣以預定流量持續流動的方式，獲得足夠低的濕度。又，藉由像這樣使乾空氣以預定流量流動的方式，亦可獲得冷卻天線室3內的效果。因此，可一邊抑制天線室3內之沿面放電，一邊防止因溫度上升所致之不良。但是，在僅設置開口作為排氣埠時，係由於高濕度的空氣會從開口流入至天線室3內，因此，有濕度上升之傾向，並不佳。 In the present embodiment, when the humidity in the antenna room 3 is managed, the cover of the antenna room 3 is closed, and dry air is supplied from the dry air supply source 51 while a punching plate or exhaust is provided. An exhaust port 55 such as a fan exhausts dry air. Thereby, the humidity in the antenna chamber 3 can be kept sufficiently low. FIG. 6 and FIG. 7 respectively show changes in humidity over time when a punching plate is provided in the exhaust port 55 and when an exhaust fan is provided. As shown in these figures, it is known that in any case, the dry air can also be continuously flowed at a predetermined flow rate to obtain a sufficiently low humidity. In addition, the effect of cooling the inside of the antenna chamber 3 can also be obtained by flowing dry air at a predetermined flow rate. Therefore, while suppressing creeping discharge in the antenna chamber 3, it is possible to prevent defects due to temperature rise. However, when only an opening is provided as the exhaust port, since high-humidity air flows into the antenna chamber 3 from the opening, there is a tendency that the humidity rises, which is not preferable.
在不必冷卻天線室3內時，係亦可不設置排氣埠55，而使天線室3成為大致密閉空間。在該情況下，係不必使乾空氣常時流動，在天線室3內成為預定壓力的乾空氣環境之後，來自乾空氣供給源51之乾空氣的供給，係 為補償從天線室3漏出之乾空氣的程度即可。圖8中，表示使乾空氣之壓力改變時之乾空氣之供給時間與濕度的關係。如該圖所示，相較於乾空氣之壓力為0.05MPa時，雖然0.1MPa者其到達濕度變得更低，但即便使壓力上升至0.19MPa，到達濕度亦不會下降，而到達濕度在壓力0.1MPa左右飽和。又，已知：天線室3內到達預定壓力之後直至濕度下降為止會花費一定的時間。 When it is not necessary to cool the inside of the antenna room 3, the exhaust port 55 may not be provided, and the antenna room 3 may be a substantially closed space. In this case, it is not necessary to allow the dry air to flow constantly, and after the dry air environment having a predetermined pressure in the antenna chamber 3, the supply of the dry air from the dry air supply source 51 is performed. It is sufficient to compensate the degree of dry air leaking from the antenna chamber 3. FIG. 8 shows the relationship between the dry air supply time and humidity when the dry air pressure is changed. As shown in the figure, when the pressure of dry air is 0.05 MPa, although the arrival humidity of 0.1 MPa is lower, even if the pressure is increased to 0.19 MPa, the arrival humidity does not decrease, and the arrival humidity is The pressure is saturated at about 0.1 MPa. It is also known that it takes a certain time until the humidity in the antenna chamber 3 reaches a predetermined pressure until the humidity drops.
另外，本發明，係不限定於上述實施形態，可進行各種變形。例如，在上述實施形態中，雖使用乾空氣供給機構作為濕度調整手段，但亦可使用乾空氣以外的乾燥氣體。又，不限於乾燥氣體，亦可使用例如藉由使溫度改變的方式來調整濕度者等其他手段。又，雖例示漩渦狀者作為天線的形狀，但並不限於此，可因應欲生成之電漿，使用任意形狀者。 In addition, the present invention is not limited to the above-mentioned embodiment, and various modifications can be made. For example, although the dry air supply mechanism is used as the humidity adjustment means in the above-mentioned embodiment, a dry gas other than dry air may be used. Moreover, it is not limited to a dry gas, For example, you may use other means, such as a person who adjusts a humidity by changing a temperature. In addition, although the shape of the vortex as an antenna is exemplified, it is not limited to this, and any shape can be used according to the plasma to be generated.
而且，在上述實施形態中，雖表示關於將本發明應用於感應耦合電漿處理裝置之天線室的情形，但並不限於此，只要是高頻電漿裝置(該高頻電漿裝置，係形成為在絕緣物上配置施加有高頻電力的電極而可產生沿面放電之狀態)，亦可應用於例如電容耦合型電漿處理裝置等，其他高頻電漿裝置。 Moreover, in the above-mentioned embodiment, although the case where the present invention is applied to the antenna chamber of an inductively coupled plasma processing apparatus is shown, it is not limited to this, as long as it is a high-frequency plasma apparatus It is formed in a state where an electrode to which high-frequency power is applied is arranged on an insulator so that creeping discharge can be generated. It can also be applied to, for example, a capacitive coupling type plasma processing device, and other high-frequency plasma devices.
甚且，在上述實施形態中，雖表示關於將本發明應用於蝕刻處理的情況，但亦可應用於CVD成膜等的其他電漿處理裝置。而且，雖表示使用FPD用之矩形基板作為基板的例子，但亦可應用於處理太陽能電池等之其他 矩形基板的情形，或者不限於矩形，亦可應用於例如半導體晶圓等的圓形基板。 Furthermore, although the above-mentioned embodiment shows the case where the present invention is applied to an etching process, it can also be applied to other plasma processing apparatuses such as CVD film formation. In addition, although an example is shown in which a rectangular substrate for FPD is used as a substrate, it can also be applied to other processes such as solar cells. The case of a rectangular substrate is not limited to a rectangle, and can also be applied to a circular substrate such as a semiconductor wafer.
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- 2015-02-16 KR KR1020150023092A patent/KR101768761B1/en active IP Right Grant
- 2015-02-27 CN CN201510090022.6A patent/CN104882376B/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20150101928A (en) | 2015-09-04 |
| KR101768761B1 (en) | 2017-08-17 |
| CN104882376B (en) | 2018-11-09 |
| TW201543530A (en) | 2015-11-16 |
| CN104882376A (en) | 2015-09-02 |
| JP6317138B2 (en) | 2018-04-25 |
| JP2015162570A (en) | 2015-09-07 |
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