TWI669031B - Composite metal substrate and method for manufacturing the same and circuit board - Google Patents
Composite metal substrate and method for manufacturing the same and circuit board Download PDFInfo
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Abstract
一種複合金屬基板及其製法,該複合金屬基板係包括:核心層;形成於該核心層上之粗化層;以及形成於該粗化層上之複合金屬層,使該粗化層夾置於該複合金屬層與核心層之間,其中,該複合金屬層中係包括銀層、鎳層和銅層。本發明復提供一種具有該複合金屬基板之線路板。 A composite metal substrate comprising: a core layer; a roughened layer formed on the core layer; and a composite metal layer formed on the roughened layer, the rough layer being sandwiched The composite metal layer is interposed between the core layer and the core layer, wherein the composite metal layer comprises a silver layer, a nickel layer and a copper layer. The present invention provides a circuit board having the composite metal substrate.
Description
本發明係有關一種複合金屬基板,尤係關於一種用於軟性印刷線路板之複合金屬基板及其製法。 The present invention relates to a composite metal substrate, and more particularly to a composite metal substrate for a flexible printed wiring board and a method of fabricating the same.
電子與光電產業的發展日新月異,電子產品快速輕薄短小化,印刷電路板也面臨著高精度、高密度、細線化的挑戰。近年來隨著4G、5G、6G、2K或4K等顯示幕幕的快速發展,驅動軟性線路板必須越來越小且在能將部分無源元件集成到線路板上,使得對於線路板的要求不僅需利於系統的小型化,以提高電路的組裝密度,更需利於提高系統的可靠性。 The development of electronics and optoelectronics industry is changing with each passing day. Electronic products are fast, light, thin and short. Printed circuit boards are also facing the challenges of high precision, high density and thin line. In recent years, with the rapid development of display screens such as 4G, 5G, 6G, 2K or 4K, the driving flexible circuit board must be smaller and smaller, and some passive components can be integrated on the circuit board, so that the requirements for the circuit board Not only the system needs to be miniaturized, but also the assembly density of the circuit is increased, and the reliability of the system needs to be improved.
目前市面上為了配合細線化線路加工的需求大部分採用蝕薄銅法或半加成法二兩種方法,其中,蝕薄銅法即是把原來較厚的銅箔通過蝕刻制程利用藥水咬蝕掉一部分銅箔達到薄型化的要求,但在實際的生產操作中我們發現此方法對蝕刻均勻性要求非常高,稍不注意即會造成蝕刻不完全,線路殘銅造成短路等現象。 At present, in order to meet the needs of processing thin wire processing, most of the two methods are etched copper or semi-additive. Among them, the copper thinning method is to etch the original thick copper foil by etching process. A part of the copper foil is required to be thinned, but in actual production operations, we have found that this method requires very high etching uniformity, and a slight inattention may result in incomplete etching and short circuit caused by copper residual.
因此,目前奈米銅基板廠商的大部分採用半加成法進 行生產製造,以達到細線化線路加工的需求,而半加成法之實施方式又分為鍍銅法與載體銅法二種,其中,鍍銅法使用步驟是將聚醯亞胺膜進行預鑽孔,以電漿處理加超音波化學清洗PI(聚醯亞胺)表面及孔壁表面,達到粗化表面的目的。然後經過觸媒的方式採用電鍍法使PI表面及孔壁鍍上一層觸媒層:如鉻、鈀、鎳、碳等或其合金層,然後通過化學電鍍銅的方式增加銅基板的厚度。惟,此種工藝容易發生通孔在化學粗化時咬蝕過甚造成的孔破、凹坑等異常,特別是以黑孔方式鍍銅易發生碳殘留,造成信賴性及尺寸、剝離強度等異常。不僅如此,採用鍍銅法時,為了滿足結合力的需求在完成第一層觸媒層後需要藉由熱處理來改善常規金屬層與聚醯亞胺層之間的接著力問題,卻會影響基板的尺寸安定性。 Therefore, most of the current nano copper substrate manufacturers use the semi-additive method to manufacture, in order to meet the needs of thin line processing, and the semi-additive method is divided into two methods: copper plating method and carrier copper method. Among them, the copper plating method uses the pre-drilling of the polyimine film, and the plasma treatment and ultrasonic cleaning of the surface of the PI (polyimine) and the surface of the pore wall are performed to achieve the purpose of roughening the surface. Then, the PI surface and the pore wall are plated with a catalyst layer by means of a catalyst, such as chromium, palladium, nickel, carbon or the like, or an alloy layer thereof, and then the thickness of the copper substrate is increased by electroless plating of copper. However, such a process is prone to abnormalities such as hole breakage and pits caused by the bite of the through hole during chemical roughening. In particular, copper plating is likely to occur due to black hole plating, resulting in reliability, size, peel strength, and the like. . In addition, when the copper plating method is used, in order to meet the bonding force, after the completion of the first layer of the catalyst layer, heat treatment is needed to improve the adhesion between the conventional metal layer and the polyimide layer, but the substrate is affected. The dimensional stability.
而載體銅法,雖然載體層保護銅箔不折傷、墊傷,但是在剝離載體層時易造成加工困難及剝離時的應力殘留而容易造成銅箔的變形、尺寸漲縮的變化大;另超薄銅箔加工不易,會增加加工成本。 In the carrier copper method, although the carrier layer protects the copper foil from scratches and scratches, it is easy to cause processing difficulties and stress residual during peeling when peeling off the carrier layer, and the copper foil is likely to be deformed and the dimensional expansion and contraction is greatly changed; Ultra-thin copper foil is not easy to process and will increase processing costs.
因此,仍須開發一種用於薄型高密度線路,且能同時具備良好地尺寸安定性與剝離強度,還易於加工的金屬基板及其製造方法。 Therefore, there has still been a need to develop a metal substrate which can be used for a thin high-density circuit and which has good dimensional stability and peel strength, and which is easy to process, and a method for producing the same.
本發明提供一種製造複合金屬基板之方法,該方法係包括:於一具有相對二表面之核心層中,形成貫穿該核心層之貫孔;於該核心層之相對二表面上分別形成具有相對 之第一表面和第二表面之二層粗化層,且各該粗化層以該第二表面與該核心層接觸;以及於該粗化層上形成複合金屬層,使該粗化層夾置於該複合金屬層與核心層之間,且該複合金屬層中係包括銀層、鎳層和銅層。本發明復提供一種複合金屬基板,係包括核心層,係具有相對二表面;具有相對之第一表面和第二表面之二層粗化層,係分別形成於該核心層之相對二表面上,且各該粗化層以該第二表面與該核心層接觸;以及二層複合金屬層,係分別形成於各該粗化層上,使該粗化層夾置於該複合金屬層與核心層之間,其中,該複合金屬層中係包括銀層、鎳層和銅層。 The present invention provides a method for manufacturing a composite metal substrate, the method comprising: forming a through hole penetrating through the core layer in a core layer having opposite surfaces; forming opposite sides on opposite surfaces of the core layer a two-layer roughening layer of the first surface and the second surface, and each of the roughening layers is in contact with the core layer by the second surface; and forming a composite metal layer on the roughened layer to sandwich the roughened layer Between the composite metal layer and the core layer, and the composite metal layer includes a silver layer, a nickel layer and a copper layer. The present invention provides a composite metal substrate comprising a core layer having opposite surfaces; and two rough layers having opposite first and second surfaces, respectively formed on opposite surfaces of the core layer, And each of the roughened layers is in contact with the core layer by the second surface; and a two-layer composite metal layer is formed on each of the roughened layers, and the roughened layer is sandwiched between the composite metal layer and the core layer Between the two, the composite metal layer includes a silver layer, a nickel layer and a copper layer.
本發明還提供一種複合金屬線路板之製法,係包括:於本發明之複合金屬基板之至少一側表面上形成光阻層;圖案化該光阻層,以自經圖案化之該光阻層中曝露該複合金屬層;移除被曝露之該複合金屬層和經圖案化之該光阻層,以形成線路層;以及於該線路層上鍍銅,以增加該線路層之厚度。 The invention also provides a method for manufacturing a composite metal circuit board, comprising: forming a photoresist layer on at least one surface of the composite metal substrate of the invention; patterning the photoresist layer to self-pattern the photoresist layer Exposing the composite metal layer; removing the exposed composite metal layer and the patterned photoresist layer to form a wiring layer; and plating copper on the wiring layer to increase the thickness of the wiring layer.
於本發明之一具體實施例中,形成該貫孔之步驟係以紫外光(UV)或機械鑽孔於該核心層上形成軟性印刷電路板(FPC)製造所需之貫孔。 In one embodiment of the invention, the step of forming the via is performed by ultraviolet light (UV) or mechanical drilling on the core layer to form a through hole for the fabrication of a flexible printed circuit board (FPC).
於本發明製造複合金屬基板之方法的一具體實施例中,該粗化層之第一表面的表面粗糙度(Rz)為50至800nm。 In a specific embodiment of the method for producing a composite metal substrate of the present invention, the first surface of the roughened layer has a surface roughness (Rz) of 50 to 800 nm.
於本發明製造複合金屬基板之方法的一具體實施例中,復包括在於該粗化層上形成複合金屬層的同時,於該 貫孔內形成複合金屬層,以作為該複合金屬基板之導電通孔。 In a specific embodiment of the method for manufacturing a composite metal substrate of the present invention, the composite metal layer is formed on the roughened layer, and a composite metal layer is formed in the through hole as a conductive path of the composite metal substrate. hole.
於本發明製造複合金屬基板之方法的又一具體實施例中,復包括於形成該複合金屬層之前,於該貫孔內填充導電漿料,以形成貫穿該複合金屬基板之導電柱。 In still another embodiment of the method for fabricating a composite metal substrate of the present invention, the conductive paste is filled in the through hole to form a conductive pillar penetrating the composite metal substrate before forming the composite metal layer.
於本發明之複合金屬基板及其製法之一具體實施例中,該複合金屬層係以該銀層與該粗化層接觸。 In a specific embodiment of the composite metal substrate of the present invention and the method for producing the same, the composite metal layer is in contact with the rough layer by the silver layer.
於本發明之複合金屬基板及其製法之一具體實施例中,該複合金屬層中該銀層、鎳層和銅層係依銀層、銅層和鎳層順序排列,亦即該銅層係位於該銀層和鎳層之間。 In a specific embodiment of the composite metal substrate of the present invention and the method for fabricating the same, in the composite metal layer, the silver layer, the nickel layer and the copper layer are sequentially arranged according to the silver layer, the copper layer and the nickel layer, that is, the copper layer is located Between the silver layer and the nickel layer.
於本發明之複合金屬基板及其製法之一具體實施例中,該複合金屬層之厚度為100至800奈米。 In a specific embodiment of the composite metal substrate of the present invention and a method for producing the same, the composite metal layer has a thickness of 100 to 800 nm.
於本發明之複合金屬基板及其製法之一具體實施例中,該粗化層之厚度分別為2至5微米。 In a specific embodiment of the composite metal substrate of the present invention and the method for producing the same, the thickness of the roughened layer is 2 to 5 μm, respectively.
於本發明之複合金屬基板及其製法之一具體實施例中,該粗化層之表面粗糙度(Rz)為50至800nm。 In a specific embodiment of the composite metal substrate of the present invention and a process for producing the same, the roughened layer has a surface roughness (Rz) of 50 to 800 nm.
於本發明之複合金屬基板及其製法之一具體實施例中,該核心層之厚度為12.5至100微米。 In one embodiment of the composite metal substrate of the present invention and a method of making the same, the core layer has a thickness of from 12.5 to 100 microns.
於本發明之複合金屬基板及其製法之一具體實施例中,該核心層之熱膨脹係數為4至19ppm/℃。 In a specific embodiment of the composite metal substrate of the present invention and a process for producing the same, the core layer has a coefficient of thermal expansion of 4 to 19 ppm/°C.
本發明複合金屬基板及其製造方法中,透過至少包括銀層、鎳層和銅層的複合金屬層,本發明透過物理製備方法,得以避免化學法對金屬基板的孔壁咬蝕過甚造成的孔破、凹坑等異常(例如,避免碳殘留等),提升尺寸安定性 與剝離強度,不僅能減少FPC鑽孔工藝,縮短製作週期,還能提升所製得之線路板的產品良率。 In the composite metal substrate of the present invention and the method for fabricating the same, the composite metal layer comprising at least a silver layer, a nickel layer and a copper layer is transparently formed by the present invention to avoid pore breakage caused by chemically puncturing the pore walls of the metal substrate. Abnormalities such as pits (for example, avoiding carbon residue, etc.), improving dimensional stability and peel strength, not only can reduce the FPC drilling process, shorten the production cycle, but also improve the product yield of the obtained circuit board.
1、1’‧‧‧複合金屬基板 1, 1'‧‧‧ composite metal substrate
10‧‧‧核心層 10‧‧‧ core layer
100‧‧‧貫孔 100‧‧‧through holes
11‧‧‧粗化層 11‧‧‧ rough layer
11a‧‧‧第一表面 11a‧‧‧ first surface
11b‧‧‧第二表面 11b‧‧‧ second surface
12,12’‧‧‧複合金屬層 12,12’‧‧‧Composite metal layer
121,221‧‧‧銀層 121,221‧‧‧ silver layer
122,222‧‧‧銅層 122, 222‧‧‧ copper layer
123,223‧‧‧鎳層 123,223‧‧‧ Nickel layer
13‧‧‧導電通孔 13‧‧‧Electrical through holes
13’‧‧‧導電柱 13’‧‧‧conductive column
2‧‧‧複合金屬線路板 2‧‧‧Composite metal circuit board
20‧‧‧經圖案化之光阻層 20‧‧‧ patterned photoresist layer
200‧‧‧光阻層 200‧‧‧ photoresist layer
21‧‧‧銅 21‧‧‧ copper
22‧‧‧線路層 22‧‧‧Line layer
M‧‧‧遮罩 M‧‧‧ mask
第1A至1D圖係顯示本發明之複合金屬基板之製法示意圖,其中,第1C’圖係本發明之複合金屬基板的另一實施態樣之製法示意圖;以及第2A至2E圖係顯示本發明之複合金屬線路板之製法示意圖。 1A to 1D are views showing a method of manufacturing a composite metal substrate of the present invention, wherein a first embodiment of the present invention is a schematic view of another embodiment of the composite metal substrate of the present invention; and FIGS. 2A to 2E are diagrams showing the present invention. Schematic diagram of the method of manufacturing a composite metal circuit board.
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「一」及「上」亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terms "a" and "an" are used in the specification for the purpose of description and are not intended to limit the scope of the invention. The following is also considered to be an area in which the invention can be implemented.
以下係藉由特定的具體實例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解 本發明之其他優點與功效。本發明亦可藉由其他不同的具體實例加以施行或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本發明之精神下進行各種修飾與變更。 The embodiments of the present invention are described below by way of specific examples, and those skilled in the art can readily appreciate the other advantages and advantages of the present invention. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes may be made without departing from the spirit and scope of the invention.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered.
請參閱第1A至1D圖係顯示本發明之複合金屬基板之製法示意圖。 Please refer to FIGS. 1A to 1D for a schematic view showing the process of the composite metal substrate of the present invention.
如第1A圖所示,本發明複合金屬基板之製法係包括:於一具有相對二表面之核心層10中,形成貫穿該核心層10之貫孔100。 As shown in FIG. 1A, the method for fabricating a composite metal substrate of the present invention comprises forming a through hole 100 penetrating the core layer 10 in a core layer 10 having opposite surfaces.
於本實施例中,形成該貫孔100之方式係以紫外光(UV)或機械鑽孔於該核心層10上形成該貫孔100。於一實施例中,該貫孔100係用於製造軟性印刷電路板所需之孔洞。 In the embodiment, the through hole 100 is formed by forming the through hole 100 on the core layer 10 by ultraviolet light (UV) or mechanical drilling. In one embodiment, the through hole 100 is used to make a hole required for a flexible printed circuit board.
於本實施例中,該核心層10之厚度為12.5至100微米,於更佳實施例中,該核心層10之厚度為12.5至50微米。 In the present embodiment, the core layer 10 has a thickness of 12.5 to 100 microns. In a more preferred embodiment, the core layer 10 has a thickness of 12.5 to 50 microns.
於本實施例中,形成該核心層10之材質為具有低熱膨脹係數(CTE)之聚合材料,舉例而言,形成該核心層10 之材質為具有低熱膨脹係數之聚醯亞胺。於前述實施例中,該核心層10之熱膨脹係數係為4至19ppm/℃,更佳係為4至11ppm/℃。當本發明使用具有低熱膨脹係數之聚醯亞胺作為核心層10,可以降低本發明複合金屬基板之熱膨脹係數值,以降低整該複合金屬基板之尺寸漲縮,提升其尺寸安定性,而更適用於超細線路的應用。 In the present embodiment, the material of the core layer 10 is a polymeric material having a low coefficient of thermal expansion (CTE). For example, the material forming the core layer 10 is a polyimide having a low coefficient of thermal expansion. In the foregoing embodiment, the core layer 10 has a coefficient of thermal expansion of 4 to 19 ppm/°C, more preferably 4 to 11 ppm/°C. When the present invention uses a polyimine having a low coefficient of thermal expansion as the core layer 10, the coefficient of thermal expansion coefficient of the composite metal substrate of the present invention can be lowered to reduce the size expansion of the composite metal substrate and improve the dimensional stability thereof. Suitable for applications with ultra-fine lines.
如第1B圖所示,於該核心層10上形成具有相對之第一表面11a和第二表面11b之粗化層11,以該第二表面11b與該核心層10接觸。 As shown in FIG. 1B, a roughened layer 11 having a first surface 11a and a second surface 11b opposite to each other is formed on the core layer 10, and the second surface 11b is in contact with the core layer 10.
於本實施例中,該粗化層11之厚度為2至5微米。於本實施例中,該粗化層11之表面粗糙度(Rz)為50至800nm,具體而言,該第一表面11a之表面粗糙度為50至800nm,於更佳實施例中,該第一表面11a之表面粗糙度為80至800nm。 In the present embodiment, the roughened layer 11 has a thickness of 2 to 5 μm. In this embodiment, the roughened layer 11 has a surface roughness (Rz) of 50 to 800 nm. Specifically, the first surface 11a has a surface roughness of 50 to 800 nm. In a more preferred embodiment, the first A surface 11a has a surface roughness of 80 to 800 nm.
於本發明中,形成該粗化層11的材質中包含用以形成該核心層的材質,舉例而言,當形成該核心層10之材質為聚醯亞胺時,則形成該粗化層11之材質包括聚醯亞胺和添加物。 In the present invention, the material for forming the rough layer 11 includes a material for forming the core layer. For example, when the material of the core layer 10 is formed of polyimine, the rough layer 11 is formed. Materials include polyimine and additives.
於本實施例中,形成該粗化層11之材質係為聚醯亞胺和添加物,以該粗化層11之總重量計,該添加物含量為3至45重量%,更佳係含量為5至15重量%,並經過表面粗化處理得到經粗化之表面(第一表面11a)。 In the present embodiment, the material for forming the rough layer 11 is polyimine and the additive, and the content of the additive is 3 to 45% by weight, more preferably, based on the total weight of the rough layer 11. It is 5 to 15% by weight and is subjected to surface roughening treatment to obtain a roughened surface (first surface 11a).
於本實施例中,該表面粗化處理係透過經過表面電暈、電漿處理或表面的粉體粗化等步驟完成。於前述實施例中, 該添加物係為無機粉體或阻燃性之化合物,該無機粉體係為二氧化矽、二氧化鈦、氧化鋁、氫氧化鋁或碳酸鈣,該阻燃性化合物係為含有鹵素、磷系、氮系或硼系之阻燃性化合物,當該添加物係為無機粉體,以該粗化層之總重計,該無機粉體之含量為3至45重量%,又,當該添加物係為阻燃性化合物時,以該粗化層之總重計,該阻燃性化合物之含量為3至45重量%。 In the present embodiment, the surface roughening treatment is performed by a process such as surface corona treatment, plasma treatment, or powder roughening of the surface. In the foregoing embodiment, the additive is an inorganic powder or a flame retardant compound, and the inorganic powder system is ceria, titania, alumina, aluminum hydroxide or calcium carbonate, and the flame retardant compound is contained. a flame retardant compound of a halogen, phosphorus, nitrogen or boron type, wherein the additive is an inorganic powder, and the content of the inorganic powder is from 3 to 45% by weight based on the total weight of the roughened layer, When the additive is a flame retardant compound, the flame retardant compound is contained in an amount of from 3 to 45% by weight based on the total weight of the roughened layer.
本發明透過該第一表面11a之粗糙度為50至800nm之粗化層11得以於後續設置複合金屬層12(參閱第1C圖)時,增加與複合金屬層12的接著力,當本發明之粗化層11透過表面粉體進行表面改質,更可提升該粗化層11的表面能提升該第一表面11a與複合金屬層12之接著力,又當該粗化層11中含有無機物粉體或阻燃性之化合物層時,不僅可以具有良好的接著力,含能提升該粗化層之硬度或阻燃特性。 The roughening layer 11 of the present invention through the first surface 11a having a roughness of 50 to 800 nm is used to increase the adhesion with the composite metal layer 12 when the composite metal layer 12 is subsequently disposed (see FIG. 1C), when the present invention The roughening layer 11 is surface-modified by the surface powder, and the surface of the rough layer 11 can be raised to enhance the adhesion between the first surface 11a and the composite metal layer 12, and the coarse layer 11 contains inorganic powder. When the body or the flame retardant compound layer has a good adhesion, it can enhance the hardness or flame retardancy of the roughened layer.
如第1C圖所示,於該粗化層11上形成複合金屬層12,使該粗化層11夾置於該複合金屬層12與核心層10之間,得到本發明之複合金屬基板1。 As shown in Fig. 1C, a composite metal layer 12 is formed on the roughened layer 11, and the roughened layer 11 is interposed between the composite metal layer 12 and the core layer 10 to obtain a composite metal substrate 1 of the present invention.
於本實施例中,該複合金屬層12中係包括銀層121、銅層122和鎳層123。 In the embodiment, the composite metal layer 12 includes a silver layer 121, a copper layer 122, and a nickel layer 123.
於本實施例中,係以該銀層121與該粗化層11之第一表面11a接觸,且並於該銀層121上形成銅層122,最後材在該複合金屬層12之外側,即遠離該粗化層11之一側,形成鎳層123。 In this embodiment, the silver layer 121 is in contact with the first surface 11a of the roughened layer 11, and a copper layer 122 is formed on the silver layer 121, and finally the material is on the outer side of the composite metal layer 12, that is, A nickel layer 123 is formed away from one side of the roughened layer 11.
於本發明中,該複合金屬層12係以濺鍍或電鍍方式所形成。 In the present invention, the composite metal layer 12 is formed by sputtering or electroplating.
於本實施例中,在於該粗化層11上形成複合金屬層12的同時,於該貫孔100內形成複合金屬層12,令該複合金屬層12係形成於該粗化層11上與貫孔100中,以作為該複合金屬基板1之導電通孔13,該導電通孔13得電性連接後形成於該複合金屬基板1相對兩面之線路,而製得該複合金屬基板1。於前述實施例中,該導電通孔13係以孔壁濺鍍金屬法製得。 In the present embodiment, the composite metal layer 12 is formed on the roughened layer 11, and the composite metal layer 12 is formed in the through hole 100, so that the composite metal layer 12 is formed on the roughened layer 11 In the hole 100, the conductive metal via 1 is formed as a conductive via 13 of the composite metal substrate 1, and the conductive via 13 is electrically connected to the opposite sides of the composite metal substrate 1. In the foregoing embodiment, the conductive via 13 is formed by a hole wall metal plating method.
於一實施例中,該複合金屬層12之總厚度為100至800奈米。於前述實施例中,該銀層121和鎳層123各別為5奈米以上,較佳該銀層為5至15奈米,該鎳層為5至15奈米,該複合金屬層中的銅層為90奈米以上,較佳該銅層為90至150奈米。 In one embodiment, the composite metal layer 12 has a total thickness of from 100 to 800 nm. In the foregoing embodiment, the silver layer 121 and the nickel layer 123 are each 5 nm or more, preferably the silver layer is 5 to 15 nm, and the nickel layer is 5 to 15 nm, in the composite metal layer. The copper layer is 90 nm or more, and preferably the copper layer is 90 to 150 nm.
於本實施例中,透過厚度為5至15奈米之銀層121和鎳層123保護該複合金屬層中的銅層122不被氧化,以提升該複合金屬層經圖案化後之線路電性連接的可靠度。 In this embodiment, the copper layer 122 in the composite metal layer is protected from oxidation by the silver layer 121 and the nickel layer 123 having a thickness of 5 to 15 nm to enhance the patterned electrical properties of the composite metal layer. The reliability of the connection.
本實施例之該複合金屬層12是透過該銀層121先與該粗化層11之第一表面11a接觸,故具有較佳之接著強度,因此,本實施例之複合金屬層透過依序形成的銀層121、銅層122和鎳層123得同時具備良好的接著強度、電性連接效果與可靠度。 The composite metal layer 12 of the present embodiment is in contact with the first surface 11a of the roughened layer 11 through the silver layer 121, so that the composite metal layer 12 has a good bonding strength. Therefore, the composite metal layer of the embodiment is sequentially formed. The silver layer 121, the copper layer 122, and the nickel layer 123 have both good adhesion strength, electrical connection effect, and reliability.
參閱第1C’圖,於本發明之另一實施例中,該複合金屬層12僅形成於該粗化層11上,未形成於該貫孔100中, 此時,本發明複合金屬基板之製法中復包括於該貫孔100內填充導電漿料,以作為該複合金屬基板之導電柱13’。 Referring to FIG. 1C′, in another embodiment of the present invention, the composite metal layer 12 is formed only on the roughened layer 11 and is not formed in the through hole 100. In this case, the composite metal substrate of the present invention is prepared. The intermediate layer includes a conductive paste filled in the through hole 100 to serve as the conductive pillar 13' of the composite metal substrate.
於本實施例中,形成該導電柱13’之方法係經過網版的漏印,令導電漿料滲入預製好的貫孔100中,並利用毛細吸風作用,使該貫孔100之孔徑內注滿柱體或鉚釘式結構的導電漿料,然後烘烤使其固化,形成互連導通孔。 In the present embodiment, the method of forming the conductive pillar 13' is through the screen printing, so that the conductive paste penetrates into the pre-made through hole 100, and the capillary hole is used to make the through hole 100. The conductive paste of the pillar or rivet structure is filled and then baked to cure to form interconnect vias.
於前述實施例中,該導電漿料係由環氧樹脂和含量介於5至55重量%之導電顆粒所形成,該導電顆粒係為銅、銀、鎳、碳或其組合。 In the foregoing embodiments, the conductive paste is formed of an epoxy resin and conductive particles in an amount of 5 to 55% by weight, the conductive particles being copper, silver, nickel, carbon or a combination thereof.
如第1D圖所示,並於形成貫穿該複合金屬基板1’之導電柱13’後,再於該粗化層11和該導電柱13’之相對二端面(未標示)上形成複合金屬層12’,使該粗化層11夾置於該複合金屬層12’與核心層10之間,該導電柱13’夾置於該複合金屬層12’中,得到本發明另一實施態樣之複合金屬基板1’。 As shown in FIG. 1D, after forming the conductive pillar 13' penetrating the composite metal substrate 1', a composite metal layer is formed on the opposite end faces (not labeled) of the roughened layer 11 and the conductive pillar 13'. 12', the roughened layer 11 is sandwiched between the composite metal layer 12' and the core layer 10, and the conductive pillar 13' is sandwiched in the composite metal layer 12' to obtain another embodiment of the present invention. Composite metal substrate 1'.
不僅如此,當本發明之複合金屬層之厚度為100至200奈米時,以本發明之複合金屬基板製得之線路板的線路層之線寬(或線距)能達到15微米,或甚至是10微米,更佳該線寬(或線距)更能低於10微米,以達到細線路之要求,而更能滿足FPC或COF基板對於細線化的要求,符合FPC製造廠商的生產需求,提升FPC製造廠商的產品良率,降低加工成本。 Moreover, when the thickness of the composite metal layer of the present invention is 100 to 200 nm, the line width (or line pitch) of the wiring layer of the wiring board made of the composite metal substrate of the present invention can reach 15 μm, or even It is 10 micrometers, and more preferably, the line width (or line pitch) can be less than 10 micrometers to meet the requirements of fine lines, and can better meet the requirements for thinning of FPC or COF substrates, and meet the production requirements of FPC manufacturers. Improve product yields and reduce processing costs for FPC manufacturers.
本發明復提供一種製造複合金屬線路板之方法,該方法係包括於本發明之複合金屬基板上形成光阻層;圖案化 該光阻層,以自經圖案化之該光阻層中曝露該複合金屬層;移除被曝露之該複合金屬層和經圖案化之該光阻層,以形成線路層;以及於該線路層上鍍銅,以增加該線路層之厚度。 The present invention provides a method for manufacturing a composite metal wiring board, the method comprising forming a photoresist layer on the composite metal substrate of the present invention; patterning the photoresist layer to expose the patterned photoresist layer a composite metal layer; removing the exposed composite metal layer and the patterned photoresist layer to form a wiring layer; and plating copper on the wiring layer to increase the thickness of the wiring layer.
請參閱第2A至2E圖係顯示本發明之複合金屬線路板之製法示意圖。 Please refer to FIGS. 2A to 2E for a schematic view showing the manufacturing method of the composite metal wiring board of the present invention.
如第2A圖所示於本發明之複合金屬基板1(參閱第1C圖)之至少一側表面上形成光阻層200。 The photoresist layer 200 is formed on at least one surface of the composite metal substrate 1 (see FIG. 1C) of the present invention as shown in FIG. 2A.
於本實施例中,係以負型光阻為例,係於本發明之複合金屬基板1上整個形成負型光阻,並於經圖案化之遮罩M存在下曝光光阻層200。 In the present embodiment, a negative photoresist is taken as an example, and a negative photoresist is formed on the composite metal substrate 1 of the present invention, and the photoresist layer 200 is exposed in the presence of the patterned mask M.
如第2B圖所示,圖案化該光阻層200,以自經圖案化之該光阻層中曝露該複合金屬層。 As shown in FIG. 2B, the photoresist layer 200 is patterned to expose the composite metal layer from the patterned photoresist layer.
於本實施例中,移除該遮罩M與被該遮罩M所遮蔽處之光阻層,即得到經圖案化之光阻層20。 In this embodiment, the mask M and the photoresist layer shielded by the mask M are removed, that is, the patterned photoresist layer 20 is obtained.
如第2C圖所示,蝕刻移除未為該經圖案化之光阻層20所覆蓋之複合金屬層12。 As shown in FIG. 2C, the composite metal layer 12 not covered by the patterned photoresist layer 20 is removed by etching.
如第2D圖所示,移除該經圖案化之光阻層20,得到線路層22。 As shown in FIG. 2D, the patterned photoresist layer 20 is removed to obtain the wiring layer 22.
於本實施例中,該線路層22中係包括銀層221、銅層222和鎳層223。 In the embodiment, the wiring layer 22 includes a silver layer 221, a copper layer 222, and a nickel layer 223.
於本實施例中,該線路層22之總厚度為100至800奈米。於前述實施例中,該銀層221和鎳層223各別為5奈米以上,較佳地,該銀層221為5至15奈米,該鎳層 223為5至15奈米,該線路層22中的銅層222為90奈米以上,較佳該銅層為90至150奈米。 In the present embodiment, the wiring layer 22 has a total thickness of 100 to 800 nm. In the foregoing embodiment, the silver layer 221 and the nickel layer 223 are each 5 nanometers or more, preferably, the silver layer 221 is 5 to 15 nanometers, and the nickel layer 223 is 5 to 15 nanometers. The copper layer 222 in layer 22 is 90 nanometers or more, and preferably the copper layer is 90 to 150 nanometers.
如第2E圖所示,於該線路層22上鍍銅21,以增加該線路層22之厚度。 As shown in FIG. 2E, copper 21 is plated on the wiring layer 22 to increase the thickness of the wiring layer 22.
於本實施例中,係以濺鍍或電鍍方式於該線路層22上鍍銅,增加該線路層22之厚度,以得到本發明之複合金屬線路板2。 In the present embodiment, copper is plated on the wiring layer 22 by sputtering or electroplating, and the thickness of the wiring layer 22 is increased to obtain the composite metal wiring board 2 of the present invention.
於本發明之複合金屬基板、複合金屬線路板及其製法中,透過至少包括銀層、鎳層和銅層的複合金屬層,本發明透過物理製備方法,得以避免化學法對金屬基板的孔壁咬蝕過甚造成的孔破、凹坑等異常(例如,避免碳殘留等),提升尺寸安定性與剝離強度,不僅能減少FPC鑽孔工藝,縮短製作週期,還能提升所製得之線路板的產品良率。 In the composite metal substrate, the composite metal wiring board and the method for manufacturing the same according to the present invention, the composite metal layer including at least a silver layer, a nickel layer and a copper layer is passed through the physical preparation method to avoid chemical biting of the hole wall of the metal substrate. Abnormalities such as hole breaks and pits caused by etch (for example, avoiding carbon residue, etc.), improve dimensional stability and peel strength, not only reduce FPC drilling process, shorten production cycle, but also improve the circuit board produced. Product yield.
當本發明之複合金屬層之厚度為100至200奈米時,以本發明之複合金屬基板製得之線路板的線路層之線寬(或線距)能達到15微米,或甚至是10微米,更佳該線寬(或線距)更能低於10微米,以達到細線路之要求,而更能滿足FPC或COF基板對於細線化的要求,符合FPC製造廠商的生產需求,提升FPC製造廠商的產品良率,降低加工成本。 When the thickness of the composite metal layer of the present invention is from 100 to 200 nm, the line width (or line pitch) of the wiring layer of the wiring board made of the composite metal substrate of the present invention can reach 15 μm, or even 10 μm. It is better that the line width (or line spacing) can be less than 10 micrometers to meet the requirements of fine lines, and can better meet the requirements for thinning of FPC or COF substrates, meet the production requirements of FPC manufacturers, and improve FPC manufacturing. Manufacturer's product yield, reducing processing costs.
上述該等實施態樣僅例示性說明本發明之功效,而非用於限制本發明,任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述該等實施態樣進行修飾與改變。此外,在上述該等實施態樣中之元件的數量僅為例 示性說明,亦非用於限制本發明。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above-described embodiments are merely illustrative of the effects of the present invention, and are not intended to limit the present invention, and those skilled in the art can implement the above-described embodiments without departing from the spirit and scope of the present invention. Make modifications and changes. In addition, the number of elements in the above-described embodiments is merely illustrative and is not intended to limit the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.
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