TWI668320B - Method for enhancing adhesion of anti-fouling film - Google Patents

Method for enhancing adhesion of anti-fouling film Download PDF

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TWI668320B
TWI668320B TW107115796A TW107115796A TWI668320B TW I668320 B TWI668320 B TW I668320B TW 107115796 A TW107115796 A TW 107115796A TW 107115796 A TW107115796 A TW 107115796A TW I668320 B TWI668320 B TW I668320B
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substrate
adhesion
modified coating
film
improving
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TW107115796A
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TW201947053A (en
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徐逸明
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馗鼎奈米科技股份有限公司
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Priority to CN201810609062.0A priority patent/CN110465203A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D67/00Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D69/00Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
    • B01D69/12Composite membranes; Ultra-thin membranes

Abstract

一種提高抗汙膜之附著力的方法。在此方法中,提供基板。形成改質鍍膜於基板之表面上,其中形成改質鍍膜時包含使用前驅物,此前驅物包含矽碳氧分子。塗布抗汙分子於改質鍍膜上。進行烘烤製程。 A method to improve the adhesion of antifouling film. In this method, a substrate is provided. The modified coating film is formed on the surface of the substrate, wherein a precursor is used when the modified coating film is formed, and the precursor contains silicon carbon oxide molecules. Apply anti-fouling molecules to the modified coating. Carry out the baking process.

Description

提高抗汙膜之附著力的方法 Method for improving adhesion of antifouling film

本發明是有關於一種抗汙膜之製作技術,且特別是有關於一種提高抗汙膜之附著力的方法。 The invention relates to a manufacturing technology of anti-fouling film, and in particular to a method for improving the adhesion of the anti-fouling film.

隨著可攜式電子裝置的蓬勃發展,抗汙處理已成為製程中不可或缺的步驟之一。抗汙處理有許多用途,例如抗汙處理可提供可攜式電子裝置之觸控面板抗汙與耐摩擦的功效,藉此達到保持可攜式電子裝置之外觀與延長可攜式電子裝置之使用壽命的目標。 With the vigorous development of portable electronic devices, anti-fouling treatment has become one of the indispensable steps in the manufacturing process. Anti-fouling treatments have many uses. For example, anti-fouling treatments can provide anti-fouling and anti-friction effects for touch panels of portable electronic devices, thereby maintaining the appearance of portable electronic devices and extending the use of portable electronic devices Life goal.

在抗汙處理上,目前較為常見的一種是針對玻璃基板的抗汙處理。此種抗汙處理係先清洗玻璃基板,再對玻璃基板進行電漿處理,藉以在玻璃基板之表面上形成氫氧(-OH)官能基。接著,在玻璃基板之表面上塗布含氟矽氧烷。隨後進行烘烤處理,以使含氟矽氧烷與玻璃基板之表面上的氫氧官能基形成鍵結,而在玻璃基板之表面上形成單分子抗汙塗層,進而完成玻璃基板之表面的抗汙處理。此單分子抗汙塗層幾乎不影響玻璃基板原來的光學特性。雖然此種 方式所得之抗汙塗層有不影響基材外觀的優點,但目前卻只能應用在玻璃上,應用在其他材質的基板時的效果不佳。 In terms of anti-fouling treatment, a common one is the anti-fouling treatment for glass substrates. This anti-fouling treatment first cleans the glass substrate, and then performs plasma treatment on the glass substrate, thereby forming a hydroxyl (-OH) functional group on the surface of the glass substrate. Next, fluorine-containing silicone is coated on the surface of the glass substrate. Subsequently, a baking process is performed to form a bond between the fluorine-containing siloxane and the hydroxyl functional group on the surface of the glass substrate, and a single-molecule antifouling coating is formed on the surface of the glass substrate, thereby completing the surface of the glass substrate Antifouling treatment. This single molecule antifouling coating hardly affects the original optical properties of the glass substrate. Although this The antifouling coating obtained by this method has the advantage of not affecting the appearance of the substrate, but currently it can only be applied to glass, and the effect is not good when applied to substrates of other materials.

另外一種抗汙處理方法則係以高分子混合含氟分子來做成透明高分子塗料,再將此透明高分子塗料塗布在玻璃或其他基板上,而在基板上形成抗汙膜,藉此使基板具有抗汙功效。然而,此種方法所形成之抗汙膜的厚度較厚,通常有幾百奈米甚至微米(μm)等級,會嚴重影響基板的光澤度與質感。 Another anti-fouling treatment method is to make a transparent polymer coating by mixing a polymer with fluorine-containing molecules, and then apply the transparent polymer coating on a glass or other substrate, and form an anti-fouling film on the substrate, thereby making The substrate has anti-fouling effect. However, the thickness of the anti-fouling film formed by this method is relatively thick, usually in the order of hundreds of nanometers or even micrometers (μm), which will seriously affect the gloss and texture of the substrate.

因此,本發明之一目的就是在提供一種提高抗汙膜之附著力的方法,其可在非玻璃基板、或其欲鍍膜表面不具有氧化矽(SiOx)層之基板上形成以氧化矽(SiOx)為主的改質鍍膜。藉此,可使氫氧(-OH)官能基順利形成在改質鍍膜之表面上。抗汙分子可與改質鍍膜之表面上的氫氧官能基產生鍵結,而可形成穩固附著於改質鍍膜上的抗汙膜,藉此可達到提高抗汙膜對基板之附著力的效果。 Therefore, an object of the present invention is to provide a method for improving the adhesion of an anti-fouling film, which can be formed on a non-glass substrate or a substrate that does not have a silicon oxide (SiO x ) layer on the surface to be coated with silicon oxide ( SiO x ) mainly modified coating. In this way, the hydroxyl (-OH) functional group can be smoothly formed on the surface of the modified plating film. Anti-fouling molecules can bond with the hydroxyl functional groups on the surface of the modified coating, and can form an anti-fouling film that is firmly attached to the modified coating, thereby improving the adhesion of the anti-fouling film to the substrate .

本發明之另一目的是在提供一種提高抗汙膜之附著力的方法,其可利用大氣電漿製程來沉積改質鍍膜,因此相較於真空鍍膜製程,本方法可大幅降低製程成本。 Another object of the present invention is to provide a method for improving the adhesion of antifouling films, which can use atmospheric plasma processes to deposit modified coatings. Therefore, compared with vacuum coating processes, this method can greatly reduce the process cost.

本發明之又一目的是在提供一種提高抗汙膜之附著力的方法,其可應用於結構複雜的基板,且可適用於各種材質之基板的鍍膜上,具有極廣泛的應用性。 Another object of the present invention is to provide a method for improving the adhesion of antifouling films, which can be applied to substrates with complex structures and can be applied to the coating of substrates of various materials, and has extremely wide applicability.

根據本發明之上述目的,提出一種提高抗汙膜之附著力的方法。在此方法中,提供基板。形成改質鍍膜於基板之表面上,其中形成改質鍍膜時包含使用前驅物,此前驅物包含矽碳氧分子。塗布抗汙分子於改質鍍膜上。進行烘烤製程。 According to the above object of the present invention, a method for improving the adhesion of the antifouling film is proposed. In this method, a substrate is provided. The modified coating film is formed on the surface of the substrate, wherein a precursor is used when the modified coating film is formed, and the precursor contains silicon carbon oxide molecules. Apply anti-fouling molecules to the modified coating. Carry out the baking process.

依據本發明之一實施例,上述之基板為一非玻璃基板、或一鍍膜表面不具氧化矽(SiOx)層之一基板。 According to an embodiment of the invention, the above-mentioned substrate is a non-glass substrate or a substrate without a silicon oxide (SiO x ) layer on the surface of the coating.

依據本發明之一實施例,上述形成改質鍍膜時包含利用大氣電漿沉積製程,且前驅物包含氣體或液體。 According to an embodiment of the present invention, the formation of the modified plating film includes an atmospheric plasma deposition process, and the precursor includes gas or liquid.

依據本發明之一實施例,上述之改質鍍膜包含氧化矽(SiOx)。 According to an embodiment of the invention, the above-mentioned modified plating film includes silicon oxide (SiO x ).

依據本發明之一實施例,上述之改質鍍膜包含二氧化矽、氧化矽、及/或碳氧化矽。 According to an embodiment of the present invention, the above-mentioned modified plating film includes silicon dioxide, silicon oxide, and / or silicon oxycarbide.

依據本發明之一實施例,上述形成改質鍍膜時包含形成複數個氫氧官能基於改質鍍膜之表面上。 According to an embodiment of the present invention, the formation of the modified plating film includes the formation of a plurality of hydroxide functional modified surface-based coatings.

依據本發明之一實施例,上述進行烘烤製程時包含將烘烤溫度控制在約50℃至約200℃。 According to an embodiment of the present invention, the above baking process includes controlling the baking temperature at about 50 ° C to about 200 ° C.

依據本發明之一實施例,於形成改質鍍膜前,上述之提高抗汙膜之附著力的方法更包含對基板之表面進行大氣電漿清潔處理。 According to an embodiment of the present invention, before forming the modified plating film, the method for improving the adhesion of the anti-fouling film further includes performing atmospheric plasma cleaning on the surface of the substrate.

依據本發明之一實施例,於形成改質鍍膜後,上述之提高抗汙膜之附著力的方法更包含對改質鍍膜進行大氣電漿改質處理,以在改質鍍膜之表面上形成複數個氫氧官能基。 According to an embodiment of the present invention, after the modified coating is formed, the above method for improving the adhesion of the anti-fouling film further includes atmospheric plasma modification of the modified coating to form a plurality on the surface of the modified coating Hydroxyl functional groups.

依據本發明之一實施例,上述之改質鍍膜之厚度等於或小於約100奈米。 According to an embodiment of the invention, the thickness of the modified coating is equal to or less than about 100 nanometers.

100‧‧‧步驟 100‧‧‧Step

110‧‧‧步驟 110‧‧‧Step

120‧‧‧步驟 120‧‧‧Step

130‧‧‧步驟 130‧‧‧Step

140‧‧‧步驟 140‧‧‧Step

150‧‧‧步驟 150‧‧‧Step

200‧‧‧基板 200‧‧‧ substrate

202‧‧‧表面 202‧‧‧Surface

210‧‧‧大氣電漿 210‧‧‧Atmospheric plasma

220‧‧‧改質鍍膜 220‧‧‧Modified coating

220t‧‧‧厚度 220t‧‧‧thickness

222‧‧‧表面 222‧‧‧Surface

230‧‧‧大氣電漿 230‧‧‧ Atmospheric plasma

240‧‧‧氫氧官能基 240‧‧‧Hydroxy functional group

250‧‧‧抗汙分子 250‧‧‧Antifouling molecule

260‧‧‧抗汙膜 260‧‧‧Antifouling film

為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:〔圖1〕係繪示依照本發明之一實施方式的一種提高抗汙膜之附著力的方法的流程圖;〔圖2A〕至〔圖2F〕係繪示依照本發明之一實施方式的一種提高抗汙膜之附著力的製程剖面圖;以及〔圖3〕係繪示利用本發明之一實施方式的一種抗汙膜之製造方法所製作之抗汙膜與傳統方法所製作之抗汙膜的耐磨測試結果的柱狀比較圖。 In order to make the above and other objects, features, advantages and embodiments of the present invention more obvious and understandable, the drawings are described as follows: [FIG. 1] shows an improved anti-fouling film according to one embodiment of the present invention Flow chart of the method of adhesion; [FIG. 2A] to [FIG. 2F] are cross-sectional views showing a process for improving the adhesion of the anti-fouling film according to an embodiment of the present invention; and [FIG. 3] are shown. A bar chart comparing the wear resistance test results of the anti-fouling film made by a method for manufacturing an anti-fouling film according to an embodiment of the present invention and the anti-fouling film made by a traditional method.

發明人利用真空蒸鍍技術在玻璃表面上鍍覆抗汙膜時,先將清洗乾淨的玻璃基板置放於承載治具上,再將承載治具連同其上的玻璃基板放入真空腔室。接著,以電漿清潔玻璃基板的表面,而後利用真空蒸鍍方式在基板之表面上形成單分子抗汙膜。為了提高單分子抗汙膜對基板的附著力,發明人在蒸鍍抗汙膜之前先在基板之表面上鍍覆一層二氧化矽膜,之後才蒸鍍單分子抗汙膜於此二氧化矽膜上。發明人發現雖然這樣的鍍膜製程可形成不影響基板之原有光 學特性的抗汙膜,且也可以應用在玻璃以外的基板上,但真空蒸鍍製程的成本相對較高,尤其是當基板面積較大時在成本上更加沒有競爭力。此外,對於一些材質的基板,抽真空處理比較困難,且真空蒸鍍製程不適合運用在結構複雜之基板的鍍膜上,應用性也因此而受限。 When the inventor uses the vacuum evaporation technology to plate an anti-fouling film on the glass surface, the cleaned glass substrate is first placed on the bearing jig, and then the bearing jig and the glass substrate on it are placed in a vacuum chamber. Next, the surface of the glass substrate is cleaned by plasma, and then a single molecule anti-fouling film is formed on the surface of the substrate by vacuum evaporation. In order to improve the adhesion of the single-molecule antifouling film to the substrate, the inventor first coated a layer of silicon dioxide film on the surface of the substrate before vaporizing the antifouling film, and then evaporated the single molecular antifouling film on the silicon dioxide On the membrane. The inventor found that although such a coating process can form the original light that does not affect the substrate The anti-fouling film with scientific characteristics can also be applied to substrates other than glass, but the cost of the vacuum evaporation process is relatively high, especially when the substrate area is large, the cost is more uncompetitive. In addition, for some substrates, vacuum processing is difficult, and the vacuum evaporation process is not suitable for the coating of substrates with complex structures, so the applicability is also limited.

有鑑於此,發明人提出一種提高抗汙膜之附著力的方法,其可在非玻璃的基板或待鍍膜之表面不具有氧化矽層的基板上,以例如大氣電漿沉積方式形成改質鍍膜,並在改質鍍膜上形成許多氫氧官能基,藉此後續塗布的抗汙分子可與這些氫氧官能基鍵結,而形成穩固附著在改質鍍膜的抗汙膜上。因此,本發明之方法可克服單分子抗汙層難以應用於非玻璃材質之基板上的問題,且本方法的應用可在大幅降低製程成本的情況下,有效提高抗汙膜對基板的附著力。 In view of this, the inventor proposes a method for improving the adhesion of the anti-fouling film, which can form a modified coating film on the non-glass substrate or the substrate without a silicon oxide layer on the surface to be coated by, for example, atmospheric plasma deposition , And many hydroxyl functional groups are formed on the modified coating film, whereby the anti-fouling molecules that are subsequently coated can be bonded to these hydroxyl functional groups to form an anti-fouling film that is firmly attached to the modified coating film. Therefore, the method of the present invention can overcome the problem that the single-molecule anti-fouling layer is difficult to apply to non-glass substrates, and the application of the method can effectively improve the adhesion of the anti-fouling film to the substrate while greatly reducing the process cost .

請參照圖1以及圖2A至圖2F,其中圖1係繪示依照本發明之一實施方式的一種係繪示依照本發明之一實施方式的一種提高抗汙膜之附著力的方法的流程圖,圖2A至圖2F係繪示依照本發明之一實施方式的一種提高抗汙膜之附著力的製程剖面圖。在本實施方式中,先進行步驟100,以提供基板200。如圖2A所示,基板200具有至少一欲鍍膜的表面202。在一些例子中,基板200為一非玻璃基板、或其欲鍍膜的表面202不具氧化矽(SiOx)層的基板。舉例而言,基板200可為塑膠基板或金屬基板,例如鋁合金基板、氮化鉻(CrN)基板、不鏽鋼基板、或表面鍍有裝飾鉻的基板。 Please refer to FIGS. 1 and 2A to 2F, wherein FIG. 1 is a flow chart illustrating a method for improving the adhesion of an anti-fouling film according to an embodiment of the invention. 2A to 2F are cross-sectional views of a process for improving the adhesion of the anti-fouling film according to an embodiment of the present invention. In this embodiment, step 100 is first performed to provide the substrate 200. As shown in FIG. 2A, the substrate 200 has at least one surface 202 to be coated. In some examples, the substrate 200 is a non-glass substrate, or a substrate 202 whose surface to be coated has no silicon oxide (SiO x ) layer. For example, the substrate 200 may be a plastic substrate or a metal substrate, such as an aluminum alloy substrate, a chromium nitride (CrN) substrate, a stainless steel substrate, or a substrate coated with decorative chromium on the surface.

接著,在一些例子中,可選擇性地進行步驟110,以在鍍膜前先清潔基板200之欲鍍膜的表面202。舉例而言,如圖2B所示,可對基板200之表面202進行大氣電漿清潔處理,以利用大氣電漿210來清潔基板200之表面202上的油汙與髒汙。形成大氣電漿210所採用之電漿工作氣體可例如為空氣、氮氣(N2)、或氮氣與空氣或氧氣(O2)的組合、氬氣(Ar)、或氬氣與空氣或氧氣的組合。舉例而言,可利用噴射式電漿技術、絕緣障蔽式放電(dielectric barrier discharge,DBD)電漿技術、或高週波(RF)電漿技術來產生大氣電漿210。 Next, in some examples, step 110 may be selectively performed to clean the surface 202 of the substrate 200 to be coated before coating. For example, as shown in FIG. 2B, the surface 202 of the substrate 200 may be cleaned with atmospheric plasma to clean the surface 202 of the substrate 200 with oil and dirt using the atmospheric plasma 210. The plasma working gas used to form the atmospheric plasma 210 may be, for example, air, nitrogen (N 2 ), or a combination of nitrogen and air or oxygen (O 2 ), argon (Ar), or argon and air or oxygen combination. For example, the atmospheric plasma 210 may be generated using jet plasma technology, dielectric barrier discharge (DBD) plasma technology, or high frequency (RF) plasma technology.

在一些特定例子中,當基板200具有乾淨的表面202的情況下,可省略上述步驟110,而無須先對基板200之表面202進行清潔處理。 In some specific examples, when the substrate 200 has a clean surface 202, the above step 110 may be omitted without first performing a cleaning process on the surface 202 of the substrate 200.

接下來,進行步驟120,以形成改質鍍膜220覆蓋在基板200之表面202上,如圖2C所示。形成改質鍍膜220時可包含使用前驅物,且此前驅物包含矽碳氧分子。在一些例子中,可利用大氣電漿沉積製程來形成改質鍍膜220。此大氣電漿沉積製程中所採用的前驅物包含含矽碳氧分子的氣體或液體。改質鍍膜220為一層類玻璃層,而可包含大量的氧化矽(SiOx)。舉例而言,改質鍍膜220包含二氧化矽、氧化矽、及/或碳氧化矽。在一些示範例子中,改質鍍膜220之厚度220t等於或小於約100奈米,以避免影響基板200原有的光學性質。此外,可利用噴射式電漿沉積技術、絕緣障蔽式放電電漿沉積技術、或高週波電漿沉積技術 來形成改質鍍膜220。在本發明中,可根據基板200之材質的不同,而選用不同的前驅物來提升改質鍍膜220的附著力。 Next, step 120 is performed to form a modified plating film 220 to cover the surface 202 of the substrate 200, as shown in FIG. 2C. The formation of the modified plating film 220 may include the use of precursors, and the precursors include silicon carbon oxide molecules. In some examples, the atmospheric plasma deposition process may be used to form the modified coating film 220. The precursor used in this atmospheric plasma deposition process includes a gas or liquid containing silicon carbon oxide molecules. The modified coating film 220 is a glass-like layer and may contain a large amount of silicon oxide (SiO x ). For example, the modified plating film 220 includes silicon dioxide, silicon oxide, and / or silicon oxycarbide. In some exemplary examples, the thickness 220t of the modified coating 220 is equal to or less than about 100 nanometers to avoid affecting the original optical properties of the substrate 200. In addition, the modified plating film 220 may be formed using a spray plasma deposition technique, an insulating barrier discharge plasma deposition technique, or a high frequency plasma deposition technique. In the present invention, different precursors can be selected according to the material of the substrate 200 to improve the adhesion of the modified plating film 220.

由於改質鍍膜220係利用大氣電漿沉積製程來製作,而非採用真空製程,因此不僅可大大的降低製程成本,且可選用的基板200材質也更多元,亦可適用於具複雜結構之基板200上,具有較廣泛的應用性。 Since the modified coating 220 is produced by an atmospheric plasma deposition process instead of a vacuum process, not only can the process cost be greatly reduced, but also the substrate 200 material that can be used is more diverse, and it can also be applied to complex structures The substrate 200 has a wide range of applications.

如圖2D所示,在一些例子中,於改質鍍膜220形成後,可選擇性地進行步驟130,以對改質鍍膜220的表面222進行大氣電漿改質處理,而利用大氣電漿230在改質鍍膜220的表面222上形成許多氫氧官能基240,藉以活化改質鍍膜220的表面222。產生大氣電漿230所採用之電漿工作氣體可例如為空氣、氮氣、或氮氣與空氣或氧氣的組合、氬氣、或氬氣與空氣或氧氣的組合。在一些示範例子中,可利用噴射式電漿沉積技術、絕緣障蔽式放電電漿沉積技術、或高週波電漿沉積技術來對改質鍍膜220的表面222進行大氣電漿改質處理。 As shown in FIG. 2D, in some examples, after the modified coating film 220 is formed, step 130 may be selectively performed to modify the surface 222 of the modified coating film 220 with atmospheric plasma, and the atmospheric plasma 230 is used A plurality of hydroxyl functional groups 240 are formed on the surface 222 of the modified plating film 220 to activate the surface 222 of the modified plating film 220. The plasma working gas used for generating the atmospheric plasma 230 may be, for example, air, nitrogen, or a combination of nitrogen and air or oxygen, argon, or a combination of argon and air or oxygen. In some demonstrative examples, spray plasma deposition technology, insulation barrier discharge plasma deposition technology, or high frequency plasma deposition technology may be used to perform atmospheric plasma modification on the surface 222 of the modified coating 220.

在一些特定例子中,於步驟120中,形成改質鍍膜220時可包含形成許多氫氧官能基240於改質鍍膜220的表面222上。在這樣的例子中,本實施方式可省略步驟130,而無須再對改質鍍膜220的表面222額外進行大氣電漿改質處理。 In some specific examples, in step 120, forming the modified plating film 220 may include forming a plurality of hydroxyl functional groups 240 on the surface 222 of the modified plating film 220. In such an example, in this embodiment, step 130 can be omitted, and no additional atmospheric plasma modification treatment is required on the surface 222 of the modified plating film 220.

由於改質鍍膜220為類玻璃層,因此大氣電漿改質處理可以在改質鍍膜220之表面222上產生較多的氫氧 官能基。這樣富含氫氧官能基之改質鍍膜220之表面222有助於後續與單分子抗汙分子鍵結。 Since the modified coating 220 is a glass-like layer, the atmospheric plasma modification treatment can generate more hydrogen and oxygen on the surface 222 of the modified coating 220 Functional group. In this way, the surface 222 of the modified coating 220 rich in hydroxyl functional groups can facilitate subsequent bonding with single molecule antifouling molecules.

請同時參照圖1與圖2E,在改質鍍膜220之表面222上形成許多氫氧官能基後,進行步驟140,以塗布抗汙分子250於改質鍍膜220之表面222上。在一些例子中,抗汙分子250可包含氟碳矽烴類化合物、全氟碳矽烴類化合物、氟碳矽烷烴類化合物、全氟矽烷烴類化合物、或全氟矽烷烴醚類化合物。如圖2E所示,抗汙分子250具有氫氧鍵。 Referring to FIGS. 1 and 2E at the same time, after forming many hydroxyl functional groups on the surface 222 of the modified plating film 220, step 140 is performed to apply anti-fouling molecules 250 on the surface 222 of the modified plating film 220. In some examples, the anti-fouling molecule 250 may include a fluorocarbon silanic compound, a perfluorocarbon silanic compound, a fluorocarbon silanic hydrocarbon compound, a perfluorosilan hydrocarbon compound, or a perfluorosilan hydrocarbon ether compound. As shown in FIG. 2E, the anti-fouling molecule 250 has a hydrogen-oxygen bond.

隨後,進行步驟150,以進行烘烤製程。因此,如圖2F所示,在烘烤製程中,抗汙分子250之氫氧鍵可與改質鍍膜220之表面222上的氫氧官能基鍵結,且水分子可被移除,而可使抗汙分子250順利鍵結並附著在改質鍍膜220之表面222上,進而在改質鍍膜220之表面222上形成抗汙膜260。在一些示範例子中,進行烘烤製程時可將烘烤溫度控制在約50℃至約200℃。此抗汙膜260可為單分子層抗汙膜。 Subsequently, step 150 is performed to perform the baking process. Therefore, as shown in FIG. 2F, during the baking process, the oxy-hydrogen bond of the anti-fouling molecule 250 can be bonded to the oxy-hydrogen functional group on the surface 222 of the modified coating 220, and the water molecule can be removed. The anti-fouling molecules 250 are smoothly bonded and attached to the surface 222 of the modified plating film 220, and then the anti-fouling film 260 is formed on the surface 222 of the modified plating film 220. In some exemplary examples, the baking temperature may be controlled at about 50 ° C to about 200 ° C during the baking process. The anti-fouling film 260 may be a monomolecular layer anti-fouling film.

由於改質鍍膜220為類玻璃層且包含大量的氧化矽(SiOx),因此經大氣電漿改質處理改質活化後,改質鍍膜220之表面222形成有大量的氫氧官能基。藉此,抗汙分子250可與改質鍍膜220順利鍵結,進而可有效提升所形成之抗汙膜260對基板200上之改質鍍膜220的附著力。 Since the modified coating film 220 is a glass-like layer and contains a large amount of silicon oxide (SiO x ), a large amount of hydroxide functional groups are formed on the surface 222 of the modified coating film 220 after being modified and activated by atmospheric plasma modification treatment. In this way, the anti-fouling molecules 250 can be smoothly bonded with the modified coating film 220, and the adhesion of the formed anti-fouling film 260 to the modified coating film 220 on the substrate 200 can be effectively improved.

請參照圖3,其係繪示利用本發明之一實施方式的一種抗汙膜之製造方法所製作之抗汙膜與傳統方法所製作之抗汙膜的耐磨測試結果的柱狀比較圖。本實施例係利用 大氣電漿沉積製程先在鋁合金基板、表面鍍有裝飾鉻的基板、氮化鉻基板、以及不鏽鋼基板上形成改質鍍膜後,再於改質鍍膜之表面上形成抗汙膜;而比較例則是未形成改質鍍膜,且係直接形成抗汙膜於鋁合金基板、表面鍍有裝飾鉻的基板、氮化鉻基板、以及不鏽鋼基板的表面上。此耐磨測試係採用無塵布對本發明之實施例之抗汙膜與比較例之抗汙膜進行壓力為1kg/cm2的耐磨性測試。由圖3可知,本發明之實施例的抗汙膜在不同基板上的耐磨次數均遠高於比較例的抗汙膜。因此,本實施例的應用確實可有效提高抗汙膜對基板的附著力。 Please refer to FIG. 3, which is a bar graph comparing the wear resistance test results of the anti-fouling film made by an anti-fouling film manufacturing method according to an embodiment of the present invention and the traditional method. This embodiment uses an atmospheric plasma deposition process to first form a modified coating on an aluminum alloy substrate, a substrate coated with decorative chromium, a chromium nitride substrate, and a stainless steel substrate, and then form an anti-fouling on the surface of the modified coating The comparative example is that the modified plating film is not formed, and the anti-fouling film is directly formed on the surface of the aluminum alloy substrate, the substrate plated with decorative chromium, the chromium nitride substrate, and the stainless steel substrate. In this abrasion resistance test, the antifouling film of the embodiment of the present invention and the antifouling film of the comparative example are subjected to an abrasion resistance test with a pressure of 1 kg / cm 2 using a dust-free cloth. It can be seen from FIG. 3 that the anti-fouling film of the embodiment of the present invention has much higher wear resistance times on different substrates than that of the comparative example. Therefore, the application of this embodiment can effectively improve the adhesion of the antifouling film to the substrate.

由上述之實施方式可知,本發明之一優點就是因為本發明之提高抗汙膜之附著力的方法可在非玻璃基板、或其欲鍍膜表面不具有氧化矽(SiOx)層之基板上形成以氧化矽(SiOx)為主的改質鍍膜。藉此,可使氫氧官能基順利形成在改質鍍膜之表面上。抗汙分子可與改質鍍膜之表面上的氫氧官能基產生鍵結,而可順利形成穩固地附著於改質鍍膜上的抗汙膜,藉此可達到提高抗汙膜對基板之附著力的效果。 The embodiment seen from the above embodiment, since one of the advantages of the present invention is to improve the adhesion of the antifouling film of the present invention may be formed on a method of non-glass substrate, or a surface to be plated having no silicon oxide (SiO x) layer of the substrate Modified coating mainly composed of silicon oxide (SiO x ). In this way, the hydroxyl functional group can be smoothly formed on the surface of the modified plating film. Anti-fouling molecules can bond with the hydroxyl functional groups on the surface of the modified coating, and can form an anti-fouling film firmly attached to the modified coating, thereby improving the adhesion of the anti-fouling film to the substrate Effect.

由上述之實施方式可知,本發明之另一優點就是因為本發明之提高抗汙膜之附著力的方法可利用大氣電漿製程來沉積抗汙膜,因此相較於真空鍍膜製程,本方法可大幅降低製程成本。 It can be seen from the above embodiments that another advantage of the present invention is that the method for improving the adhesion of the anti-fouling film of the present invention can use an atmospheric plasma process to deposit the anti-fouling film, so compared to the vacuum coating process, this method can Significantly reduce process costs.

由上述之實施方式可知,本發明之又一優點就是因為本發明之提高抗汙膜之附著力的方法係採用大氣電 漿沉積製程來形成改質鍍膜,因此可應用於結構複雜的基板,且可適用於各種材質之基板的鍍膜上,具有極廣泛的應用性。 It can be seen from the above embodiments that another advantage of the present invention is that the method for improving the adhesion of the antifouling film of the present invention uses atmospheric electricity The slurry deposition process is used to form a modified coating, so it can be applied to substrates with complex structures, and can be applied to the coating of substrates of various materials. It has a very wide range of applications.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何在此技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Anyone who has ordinary knowledge in this technical field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined in the appended patent application.

Claims (10)

一種提高抗汙膜之附著力的方法,包含:提供一基板;利用一大氣電漿沉積製程形成一改質鍍膜於該基板之一表面上,其中形成該改質鍍膜時包含使用一前驅物,該前驅物包含矽碳氧分子;塗布一抗汙分子於該改質鍍膜上;以及進行一烘烤製程。A method for improving the adhesion of an anti-fouling film, comprising: providing a substrate; forming a modified coating film on a surface of the substrate using an atmospheric plasma deposition process, wherein forming the modified coating film includes using a precursor, The precursor contains silicon carbon oxide molecules; coating an anti-fouling molecule on the modified coating film; and performing a baking process. 如申請專利範圍第1項之提高抗汙膜之附著力的方法,其中該基板為一非玻璃基板、或一鍍膜表面不具氧化矽(SiOx)層之一基板。For example, the method for improving the adhesion of the anti-fouling film according to item 1 of the patent scope, wherein the substrate is a non-glass substrate, or a substrate without a silicon oxide (SiO x ) layer on the coated surface. 如申請專利範圍第1項之提高抗汙膜之附著力的方法,其中該前驅物包含氣體或液體。For example, the method of improving the adhesion of the antifouling film according to item 1 of the patent application, wherein the precursor contains gas or liquid. 如申請專利範圍第1項之提高抗汙膜之附著力的方法,其中該改質鍍膜包含氧化矽(SiOx)。For example, the method of improving the adhesion of the antifouling film according to item 1 of the patent application scope, wherein the modified coating film contains silicon oxide (SiO x ). 如申請專利範圍第1項之提高抗汙膜之附著力的方法,其中該改質鍍膜包含二氧化矽、氧化矽、及/或碳氧化矽。For example, the method for improving the adhesion of the antifouling film according to item 1 of the patent scope, wherein the modified coating film contains silicon dioxide, silicon oxide, and / or silicon oxycarbide. 如申請專利範圍第1項之提高抗汙膜之附著力的方法,其中形成該改質鍍膜時包含形成複數個氫氧官能基於該改質鍍膜之一表面上。For example, the method for improving the adhesion of the antifouling film according to item 1 of the patent scope, wherein forming the modified coating film includes forming a plurality of hydroxide functionalities on one surface of the modified coating film. 如申請專利範圍第1項之提高抗汙膜之附著力的方法,其中進行該烘烤製程時包含將一烘烤溫度控制在50℃至200℃。For example, the method of improving the adhesion of the antifouling film according to item 1 of the patent application scope, wherein the baking process includes controlling a baking temperature between 50 ° C and 200 ° C. 如申請專利範圍第1項之提高抗汙膜之附著力的方法,於形成該改質鍍膜前,更包含對該基板之該表面進行一大氣電漿清潔處理。For example, the method of improving the adhesion of the anti-fouling film according to item 1 of the patent application scope, before forming the modified coating film, further includes performing an atmospheric plasma cleaning treatment on the surface of the substrate. 如申請專利範圍第1項之提高抗汙膜之附著力的方法,於形成該改質鍍膜後,更包含對該改質鍍膜進行一大氣電漿改質處理,以在該改質鍍膜之一表面上形成複數個氫氧官能基。For example, the method for improving the adhesion of the antifouling film according to the first item of the patent scope, after forming the modified coating film, further includes performing an atmospheric plasma modification treatment on the modified coating film to form one of the modified coating A plurality of hydroxyl functional groups are formed on the surface. 如申請專利範圍第1項之提高抗汙膜之附著力的方法,其中該改質鍍膜之厚度等於或小於100奈米。For example, the method for improving the adhesion of the antifouling film according to item 1 of the patent scope, wherein the thickness of the modified coating film is equal to or less than 100 nm.
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