TWI657122B - Anisotropic conductive film and a connection structure using thereof - Google Patents

Abstract

The present invention provides an anisotropic conductive film and a connection structure using the same. The anisotropic conductive film provides reliable connection characteristics between connected circuit terminals while preventing short circuits between adjacent electrodes. The anisotropic conductive film has a differential scanning calorimeter (DSC) starting temperature of 75 ° C to 90 ° C and a change in melt viscosity represented by the following Equation 1 from 0 Pa · s / ° C to 300 Pa · s / ° C: Equation 1 Melt viscosity change = | Melt viscosity of film at 75 ° C-Melt viscosity of film at 55 ° C | / (75 ° C-55 ° C).

Description

Anisotropic conductive film and connection structure using the same [Cross-reference to related applications]

This application claims priority and rights of Korean Patent Application No. 10-2016-0053116, filed in the Korean Intellectual Property Office on April 29, 2016, the entire contents of which are incorporated herein by reference.

The embodiment relates to an anisotropic conductive film and a connection structure using the same.

Anisotropic conductive film (ACF) generally refers to a film-like adhesive prepared by dispersing conductive particles in a resin such as an epoxy resin. The anisotropic conductive film may include a polymer layer having electrical anisotropy and adhesion, and may exhibit conductive characteristics in a film thickness direction and insulation characteristics in a surface direction thereof. When the anisotropic conductive film placed between the circuit boards to be connected is heated and compressed under certain conditions, the circuit terminals of the circuit board can be electrically connected by conductive particles and the insulation and adhesive resin can fill the adjacent electrodes. Gap to separate conductive particles from each other, thereby providing high insulation performance.

When the circuit terminals of the circuit board are connected during the heating and compression process, the conductive composition containing the conductive particles in the anisotropic conductive film can flow under heat or pressure, and the conductive particles exhibiting connection characteristics between the circuit terminals The efficiency becomes low, thereby increasing the connection resistance. In addition, a partially conductive composition containing conductive particles may flow into an adjacent void (for example, a void portion), and the conductive particles gathered in a small area may cause an electrical short.

Therefore, it is necessary to develop an anisotropic conductive film that exhibits good connection characteristics between circuit terminals and is sufficiently filled with an insulating adhesive resin between adjacent electrodes without causing a short circuit.

The embodiment is directed to an anisotropic conductive film that provides reliable connection characteristics between connected circuit terminals while preventing short circuits between adjacent electrodes.

These embodiments can be provided by a differential scanning calorimeter (DSC) with a starting temperature of 75 ° C to 90 ° C and a change in melt viscosity represented by Equation 1 below is 0 Pa. s / ℃ to 300Pa. The s / ℃ anisotropic conductive film is realized: [Equation 1] Melt viscosity change = | melt viscosity of the film at 75 ° C-melt viscosity of the film at 55 ° C | / (75 ° -55 ° C).

The embodiment can be implemented by providing a connection structure including: a first connection member including a first electrode; a second connection member including a second electrode A connection member; and an anisotropic conductive film according to the embodiment, which is disposed between the first connection member and the second connection member and connects the first electrode to the second electrode.

3‧‧‧ conductive particles

10‧‧‧ Anisotropic conductive film

30‧‧‧ connection structure

50‧‧‧First connecting part

60‧‧‧Second connection part

70‧‧‧first electrode

80‧‧‧Second electrode

The features will be readily understood by those skilled in the art by describing exemplary embodiments in detail with reference to the accompanying drawings, in which: FIG. 1 illustrates a cross-sectional view of a connection structure according to an embodiment.

Example embodiments will now be described more fully hereinafter with reference to the accompanying drawings; however, these embodiments may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these examples are provided to make the present invention thorough and complete, and they will fully convey exemplary embodiments to those skilled in the art.

In the drawings, the dimensions of layers and regions may be enlarged for clarity. It should also be understood that when a layer or element is referred to as being "on another layer or substrate," it can be directly on the other layer or substrate, or intervening layers may also be present. In addition, it should also be understood that when a layer is referred to as being “between two layers”, it may be the only layer between the two layers, or one or more intervening layers may also be present. Identical component symbols refer to the same components throughout.

One embodiment relates to an anisotropic conductive film, the anisotropic conductive film The electrical membrane has a differential scanning calorimeter (DSC) starting temperature of 75 ° C to 90 ° C and the change in melt viscosity represented by Equation 1 below is 0 Pa. s / ℃ to 300Pa. s / ° C: [Equation 1] Melt viscosity change = | melt viscosity of film at 75 ° C-melt viscosity of film at 55 ° C | / (75 ° C-55 ° C).

In one embodiment, a differential scanning calorimeter (DSC) starting temperature of the anisotropic conductive film may be 75 ° C to 90 ° C. Specifically, the starting temperature of the differential scanning calorimeter of the anisotropic conductive film can be 75 ° C, 76 ° C, 77 ° C, 78 ° C, 79 ° C, 80 ° C, 81 ° C, 82 ° C, 83 ° C, 84 ° C, 85 ° C, 86 ° C, 87 ° C, 88 ° C, 89 ° C or 90 ° C. The anisotropic conductive film may also have a DSC onset temperature in any range between at least any of the above numbers. As used herein, the DSC onset temperature refers to the temperature at which the slope of the differential scanning calorimeter graph first increases due to an exothermic reaction in the differential scanning calorimeter. In general, as the slope of the graph increases, the temperature at which the extrapolation line of the graph meets the baseline is taken as the DSC starting temperature. Within this DSC starting temperature range, the anisotropic conductive film can be rapidly cured at a relatively low temperature of 120 ° C to 160 ° C under a pressure of 50 MPa to 90 MPa, for example, within 5 seconds.

In one embodiment, the differential scanning calorimeter (DSC) peak exothermic temperature of the anisotropic conductive film may be 90 ° C, 91 ° C, 92 ° C, 93 ° C, 94 ° C, 95 ° C, 96 ° C, 97 ° C, 98 ° C, 99 ° C, 100 ° C, 101 ° C, 102 ° C, 103 ° C, 104 ° C or 105 ° C. The anisotropic conductive film may also have a DSC peak exothermic temperature in any range between at least any of the above numbers. For example, The DSC peak exothermic temperature of the anisotropic conductive film may be 90 ° C to 105 ° C. As used herein, peak exothermic temperature refers to the temperature at which the differential scanning calorimeter graph represents the maximum number. Within this DSC peak exothermic temperature range, the anisotropic conductive film can be relatively low at 160 ° C or lower, specifically 150 ° C or lower, and more specifically 140 ° C or lower. Cured at low temperatures. In addition, the anisotropic conductive film can also be cured quickly with a small temperature difference between the DSC starting temperature and the DSC peak exothermic temperature.

For example, the DSC starting temperature and the DSC peak exothermic temperature can be under a nitrogen atmosphere using a Q20 type differential scanning calorimeter (TA Instruments) in a temperature range of 0 ° C to 250 ° C at 10 ° C / The rate of min is measured from the curable resin composition.

The heat on the differential scanning calorimeter can be measured using methods commonly used in the art. For example, an anisotropic conductive film can be measured with a Q20 differential scanning calorimeter (TA Instruments) under a nitrogen atmosphere at a rate of 10 ° C / min over a temperature range of 0 ° C to 250 ° C. Changing calories.

In one embodiment, the anisotropic conductive film may have 0 Pa. s / ℃, 10Pa. s / ℃, 20Pa. s / ℃, 30Pa. s / ℃, 40Pa. s / ℃, 50Pa. s / ℃, 60Pa. s / ℃, 70Pa. s / ℃, 80Pa. s / ℃, 90Pa. s / ℃, 100Pa. s / ℃, 110Pa. s / ℃, 120Pa. s / ℃, 130Pa. s / ℃, 140Pa. s / ℃, 150Pa. s / ℃, 160Pa. s / ℃, 170Pa. s / ℃, 180Pa. s / ℃, 190Pa. s / ℃, 200Pa. s / ℃, 210Pa. s / ℃, 220Pa. s / ℃, 230Pa. s / ℃, 240Pa. s / ℃, 250Pa. s / ℃, 260Pa. s / ℃, 270Pa. s / ℃, 280Pa. s / ℃, 290Pa. s / ℃ or 300Pa. by s / ℃ The change in melt viscosity represented by Equation 1 above. The anisotropic conductive film may also have a melt viscosity change within any range between at least any of the above numbers. For example, the melt viscosity change of anisotropic conductive film can be 0Pa. s / ℃ to 300Pa. s / ℃, exactly 0Pa. s / ℃ to 200Pa. s / ℃. Within this range of melt viscosity variation, the melt viscosity remains substantially constant within a certain temperature range, and it is possible to control the fluidity of the composition in the film during the low temperature rapid curing process to improve the indentation characteristics. Therefore, connection reliability between circuit terminals can be improved and short circuits between adjacent electrodes can be prevented.

In one embodiment, the minimum melt viscosity of the anisotropic conductive film at a temperature of 50 ° C to 100 ° C may be 1,000 Pa. s, 2,000Pa. s, 3,000Pa. s, 4,000Pa. s, 5,000Pa. s, 6,000Pa. s, 7,000Pa. s, 8,000Pa. s, 9,000Pa. s, 10,000Pa. s, 15,000Pa. s, 20,000Pa. s, 25,000Pa. s, 30,000Pa. s, 35,000Pa. s, 40,000Pa. s, 45,000Pa. s, 50,000Pa. s, 55,000Pa. s, 60,000Pa. s, 65,000Pa. s, 70,000Pa. s, 75,000Pa. s, 80,000Pa. s, 85,000Pa. s, 90,000Pa. s, 95,000Pa. s or 100,000Pa. s. The minimum melt viscosity of the anisotropic conductive film at a temperature of 50 ° C to 100 ° C may also be in any range between at least any of the above numbers. For example, the minimum melt viscosity of the anisotropic conductive film at a temperature of 50 ° C to 100 ° C can be 1,000Pa. s to 100,000Pa. s, exactly 10,000Pa. s to 100,000Pa. s. Within this minimum melt viscosity range, the anisotropic conductive film can exhibit suitable fluidity for preliminary compression and main compression, and can improve the capture rate of conductive particles.

For example, you can use the ARES G2 rheometer (TA Instruments) to measure temperature in the temperature range of 0 ° C to 250 ° C under the conditions of a temperature rise rate of 10 ° C / min, 5% stress, and a frequency of 1.0rad / sec. Minimum melt viscosity for 150 micron thick samples.

In one embodiment, when cured to a curing rate of 90% or more, the storage modulus of the anisotropic conductive film may be 2.5GPa, 2.6GPa, 2.7GPa, 2.8GPa, 2.9GPa, 3.0GPa, 3.1 GPa, 3.2GPa, 3.3GPa, 3.4GPa, 3.5GPa, 3.6GPa, 3.7GPa, 3.8GPa, 3.9GPa, 4.0GPa, 4.1GPa, 4.2GPa, 4.3GPa, 4.4GPa, 4.5GPa, 4.6GPa, 4.7GPa, 4.8GPa, 4.9GPa or 5.0GPa. When cured to a curing rate of 90% or more, the anisotropic conductive film may also have a storage modulus in any range between at least any of the above numbers. For example, when cured to a curing rate of 90% or more, the storage modulus of the anisotropic conductive film can be 2.5GPa to 5GPa, specifically 3GPa to 5GPa, and more specifically 3.5GPa to 4.5GPa. As used herein, the term "curing rate of curing to 90% or more" generally means that the anisotropic conductive film is completely cured.

Within this storage modulus range, the anisotropic conductive film can have a desired viscosity without reducing the fluidity of the insulating layer. Therefore, the shape stability of the anisotropic conductive film can be improved and a short circuit between circuit terminals can be prevented.

The storage modulus can be measured using methods commonly used in the art. For example, the anisotropic conductive film was kept in a hot air-circulated oven at 150 ° C for 2 hours, and then a Dynamic Mechanical Analyzer Q800 (TA Instruments) was used at 30 ° C. Storage mode number.

In one embodiment, such as pre-compressing at 50 ° C to 80 ° C under a load of 1.0MPa to 3.0MPa for 1 second to 3 seconds and at 120 ° C to 160 ° C under a load of 50MPa to 90MPa for 5 seconds to Measured after 6 seconds, the anisotropic conductive film can have 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32 %, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48%, 49% or 50% of the particle capture rate represented by Equation 2 below. The anisotropic conductive film may also have a particle capture rate in any range between at least any of the above numbers. For example, the anisotropic conductive film may have 20% to 50%, specifically 25% to 45%, more specifically 30% to 40% of the particle capture rate represented by the following Equation 2: [Equation 2] Particle capture rate (%) = [Number of conductive particles per unit area (mm ² ) connected portion after main compression / Number of conductive particles per unit area (mm ² ) anisotropic conductive film before pre-compression]] 100% .

Within this particle capture rate range, there can be a sufficient number of conductive particles on the circuit terminals, and the conductivity can be improved, while the outflow of conductive particles can be reduced, thereby preventing short circuits between the circuit terminals.

For example, the particle capture rate can be measured as follows: For the prepared anisotropic conductive film, before the pre-compression, the number of conductive particles of the anisotropic conductive film per unit area (mm ² ) is measured with an automatic particle measurement device. Next, an anisotropic conductive film was placed on a glass substrate, and an indium tin oxide circuit having a bump area of 1,200 square micrometers and a thickness of 2,000 angstroms was deposited on the glass substrate. The anisotropic conductive film was pre-compressed at 1 MPa at 70 ° C for 1 second, and the release film was removed. An IC wafer having a bump area of 1,200 square micrometers and a thickness of 1.5T was placed on the anisotropic conductive film, and the anisotropic conductive film was subjected to main compression at 70 MPa and 150 ° C for 5 seconds. The number of conductive particles per unit area (mm ² ) of the connected portion was measured with an automatic particle measurement device, and the particle capture rate was calculated according to Equation 2 above.

In one embodiment, such as pre-compressing at 50 ° C to 80 ° C under a load of 1.0 MPa to 3.0 MPa for 1 second to 3 seconds and at 120 ° C to 160 ° C under a load of 50 MPa to 90 MPa for 5 seconds to Measured after holding the anisotropic conductive film for 500 seconds at 85 ° C. and 85% relative humidity for 6 seconds, the anisotropic conductive film may have 0.5 Ω or less, or 0.3 Ω or less, or 0.3 Ω, more specifically 0.2 Ω or less, the connection resistance after the reliability test.

In the connection resistance range after this reliability test, the anisotropic conductive film can exhibit improved connection reliability and can be used under long-term stability.

In one embodiment, the anisotropic conductive film may have 0.2 Ω or less, or 0.1 Ω or less, as measured by the above measurement method before being held at 85 ° C. and 85% relative humidity for 500 hours. 0.1Ω initial connection resistance.

For example, the initial connection resistance and the connection resistance after the reliability test are measured as follows: An anisotropic conductive film is placed on a glass substrate, and the bump area deposited on the glass substrate is 1,200 square microns and the thickness is 2,000 angstroms Indium tin oxide circuit. The anisotropic conductive film was pre-compressed at 1 MPa at 70 ° C for 1 second, and the release film was removed. An IC wafer having a bump area of 1,200 square micrometers and a thickness of 1.5T was placed on the anisotropic conductive film, and the anisotropic conductive film was subjected to main compression at 70 MPa and 150 ° C for 5 seconds, thereby preparing Sample. Next, the connection resistance of each sample can be measured by a 4-point probe method using, for example, a resistance measuring device 20 multimeter (Keithley Instruments). This exhibits the initial connection resistance. Next, the sample prepared by the main compression was held at 85 ° C. and 85% relative humidity for 500 hours and the resistance was measured in the same manner as described above. This shows the connection resistance after the reliability test. During the measurement, 1 mA was applied to the resistance measuring device, and the resistance was calculated from the voltage of the machine, and then the measured values were averaged.

In one embodiment, such as pre-compressing at 50 ° C to 80 ° C under a load of 1.0 MPa to 3.0 MPa for 1 second to 3 seconds and at 120 ° C to 160 ° C under a load of 50 MPa to 90 MPa for 5 seconds to As measured after 6 seconds, the initial short-circuit occurrence rate of the anisotropic conductive film may be 0%.

Within this initial short-circuit occurrence rate range, the anisotropic conductive film can reduce the driving voltage of the circuit.

For example, the initial short-circuit occurrence rate can be measured as follows: an anisotropic conductive film is cut into a size of 2 mm × 25 mm, and each cut film is bonded to an insulation resistance evaluation material. In detail, the anisotropic conductive film was placed on a 0.5 mm-thick glass substrate, heated and compressed at 70 ° C., 1 MPa, and 1 second, and the release film was removed. Next, the wafer (wafer length 19.5mm, wafer width 1.5 mm, bump spacing 8 microns) were placed on the anisotropic conductive film, and the anisotropic conductive film was subjected to main compression at 150 ° C., 70 MPa, and 5 seconds to prepare a circuit device. Next, 50 V was applied to the circuit device, and the occurrence of a short circuit was checked using a two-terminal method at 38 points, thereby measuring the initial short circuit occurrence rate.

In one embodiment, such as pre-compressing at 50 ° C to 80 ° C under a load of 1.0MPa to 3.0MPa for 1 second to 3 seconds and at 120 ° C to 160 ° C under a load of 50MPa to 90MPa for 5 seconds to It was measured after the anisotropic conductive film was kept at 85 ° C. and 85% relative humidity for 500 hours for 6 seconds. The short-circuit occurrence rate of the anisotropic conductive film after the reliability test may be 0%.

Within the short-circuit occurrence rate range after this reliability test, the anisotropic conductive film can maintain a low circuit driving voltage to ensure long-term stability.

For example, the short-circuit occurrence rate after the reliability test can be measured as follows: The circuit device used to measure the initial short-circuit occurrence rate is maintained at 85 ° C. and 85% relative humidity for 500 hours, and the same initial short-circuit occurrence rate as above Way to measure the incidence of short circuits after reliability testing.

In one embodiment, the anisotropic conductive film may include a binder resin, an epoxy resin, an inorganic filler, a curing agent, and conductive particles.

Examples of the binder resin may include polyimide resin, polyimide resin, phenoxy resin, polymethacrylate resin, polyacrylate resin, polyurethane resin, polyester resin, polyester carbamate Acid ester resin, polyvinyl butyral resin, styrene-butadiene-styrene (SBS) resin and its epoxidized modified form, styrene-ethylene-butene-styrene (styrene-ethylene-butylene-styrene (SEBS) resin and its modified form, acrylonitrile butadiene rubber (NBR) or its hydrogenated compound, or a combination thereof). Specifically, considering the chemical activity of the cationic curing agent (to be explained later), a phenoxy resin can be used as the binder resin. More specifically, a fluorene-based phenoxy resin can be used. Any fluorene-based phenoxy resin can be used without limitation as long as it is a phenoxy resin containing a fluorene structure.

In one embodiment, the amount of the binder resin present in the anisotropic conductive film composition may be 10 wt% to 40 wt% based on the total weight of the anisotropic conductive film composition. Specifically, the amount of the binder resin present in the anisotropic conductive film composition may be 20 wt% to 35 wt% based on the total weight of the anisotropic conductive film composition.

Examples of the epoxy resin may include a bisphenol type epoxy resin, such as a bisphenol A type epoxy resin, a bisphenol A type epoxy acrylate resin, a bisphenol F type epoxy resin, a bisphenol AD type epoxy resin, Phenol E-type epoxy resin and bisphenol S-type epoxy resin; aromatic epoxy resins, such as polyglycidyl ether epoxy resin, polyglycidyl ester epoxy resin, and naphthalene epoxy resin; aliphatic epoxy resin; phenolic Novolak type epoxy resin, such as cresol novolac epoxy resin and phenol novolac epoxy resin; glycidylamine epoxy resin; glycidyl ester epoxy resin; and biphenyl Glycidyl ether epoxy resin. These epoxy resins can be used alone or in combination. In one embodiment, an aliphatic epoxy resin may be used. In aliphatic epoxy resins, the epoxy structure is adjacent to the aliphatic ring. Therefore, the ring-opening reaction occurs rapidly and the reactivity of the curing reaction is good. Any aliphatic epoxy is acceptable For use, there is no limitation as long as the epoxy structure is directly connected to the aliphatic ring or indirectly connected to the aliphatic ring via another linking group.

In one embodiment, based on the total weight of the anisotropic conductive film composition, the amount of epoxy resin present in the anisotropic conductive film composition may be 10 wt% to 40 wt%, specifically 10 wt% to 35 wt. %, More precisely 15 wt% to 30 wt%.

In one embodiment, the weight ratio of the binder resin to the epoxy resin may be in a range of 4: 6 to 6: 4. Within this range, the formed anisotropic conductive film can exhibit stable connection performance after thermal compression. Specifically, the weight ratio of the binder resin to the epoxy resin may be in a range of 4: 6 to 5: 5.

Examples of the inorganic filler are not particularly limited and any inorganic filler known in the art can be used. Examples of the inorganic filler may include aluminum oxide, silicon dioxide, titanium dioxide, zirconia, magnesium oxide, cerium oxide, zinc oxide, iron oxide, silicon nitride, titanium nitride, boron nitride, calcium carbonate, aluminum sulfate, hydrogen Alumina, calcium titanate, talc, calcium silicate, magnesium silicate, etc. Specifically, alumina, silicon dioxide, calcium carbonate or aluminum hydroxide can be used. In one embodiment, alumina or silica can be used.

In one embodiment, the surface of the inorganic filler may be treated with chemical groups such as phenylamino, phenyl, methacryl, vinyl, epoxy, etc. to improve the dispersion characteristics of the anisotropic conductive film .

For example, the surface of the inorganic filler can be directly mixed with the surface treatment material in a Hensxhel mixer. In some cases, heat-treated dry Dry method can be used. In addition, the surface treatment material may be diluted with a suitable solvent.

In one embodiment, the amount of the inorganic filler present in the anisotropic conductive film may be 15 wt% to 40 wt%, specifically 20 wt% to 40 wt% based on the total weight of the anisotropic conductive film composition. Within this range, the inorganic filler can effectively disperse the conductive particles in the anisotropic conductive film and adjust the suitable fluidity of the anisotropic conductive film.

In one embodiment, the average particle diameter of the inorganic filler may be 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 200 nm, 300 nm, 400 nm, or 500 nm. The average particle diameter of the inorganic filler may also be in any range between at least any of the above numbers. For example, the average particle diameter of the inorganic filler may be 10 nm to 500 nm.

Within this average particle size range, the inorganic filler located between the conductive particles can improve the dispersion, storage modulus, and particle capture rate of the conductive particles, and can reduce the incidence of short circuits.

In one embodiment, the curing agent may be a cationic curing agent. Specifically, the curing agent may be a fluorene-based curing agent represented by the following formula 1 or a quaternary ammonium-based curing agent represented by the following formula 2:

Wherein, in Formula 1, R ₁ to R ₅ are each independently hydrogen, C ₁ to C ₆ alkyl, ethenyl, alkoxycarbonyl, benzyl or benzooxycarbonyl, and R ₆ and R ₇ Each is independently alkyl, benzyl, o-methylbenzyl, m-methylbenzyl, p-methylbenzyl or naphthylmethyl,

Wherein, in Formula 2, R ₈ , R ₉ , R _10, and R ₁₁ are each independently a substituted or unsubstituted C ₁ to C ₆ alkyl group or C ₆ to C ₂₀ aryl group, and M ^- each independently be a ^{_{Cl -, BF 4 -, PF}} 6 -, N (CF 3 SO 2) 2-, CH 3 CO 2 -, CF 3 CO 2 -, CF 3 SO 3 -, HSO 4 -, SO 4 2-, SbF ₆ ^- or _{B (C 6 F 5) 4} -.

Specifically, in the quaternary ammonium compound of Formula 2, R ₈ , R ₉ , R ₁₀ and R ₁₁ may each independently be methyl, ethyl, propyl, isopropyl, butyl, isobutyl, secondary Butyl, tert-butyl, pentyl, n-pentyl, tert-pentyl, isopentyl, hexyl, cyclohexyl, phenyl, anthracenyl or phenanthryl. As used herein, the term "substituted" may refer to the replacement of a group by, for example, an alkyl, alkoxy, amino, halogen group, or nitro group.

The quaternary ammonium compound can accelerate the ring-opening reaction of the epoxy compound at a certain temperature, thereby making the epoxy compound at 160 ° C or lower, specifically 150 ° C or lower, and more specifically 140 ° C. Or curing at temperatures below 140 ° C. In addition, the quaternary ammonium compound can delay the ring-opening reaction of the epoxy compound at a temperature lower than the curing temperature, for example, at room temperature, thereby providing excellent storage stability.

Specifically, in Formula 2, M ^- can be SbF ₆ ^- or _{B (C 6 F 5) 4} -. More specifically, M ^- may be _{B (C 6 F 5) 4} -, which is not beneficial to cause environmental problems.

In one embodiment, in terms of solid content, based on the total weight of the anisotropic conductive film composition, the amount of the curing agent present in the anisotropic conductive film may be 1 wt%, 2 wt%, 3 wt%, 4 wt% , 5wt%, 6wt%, 7wt%, 8wt%, 9wt%, or 10wt%. The amount of the curing agent present in the anisotropic conductive film may be in any range between at least any one of the above numbers. For example, in terms of solid content, based on the total weight of the anisotropic conductive film composition, the amount of the curing agent present in the anisotropic conductive film may be 1 wt% to 10 wt%, specifically 1 wt% to 5wt%. Within this range, the reaction required for curing occurs sufficiently and a suitable molecular weight is formed to exhibit excellent characteristics such as adhesion, reliability, etc. after bonding.

Examples of the conductive particles are not particularly limited and any conductive particles known in the art can be used. Examples of the conductive particles may include metal particles such as Au, Ag, Ni, Cu, and solder particles; carbon particles; polymer particles obtained by coating a polymer resin, such as polyethylene, polypropylene, polyester, polystyrene, and poly Vinyl alcohol, or a modified form thereof containing metals such as Au, Ag, and Ni; particles obtained by insulating the surface of polymer particles with insulating particles, and the like. Depending on the pitch of the circuit to be used, the size of the conductive particles can be, for example, 1 micrometer to 20 micrometers, specifically 1 micrometer to 10 micrometers.

The amount of the conductive particles present in the anisotropic conductive film may be 1 wt% to 50 wt%, specifically 10 wt% to 35 wt% based on the total weight of the anisotropic conductive film composition. Within this range, it is easy to compress between circuit terminals Conductive particles. Therefore, stable connection reliability is ensured and electrical conductivity is improved to reduce connection resistance.

In one embodiment, the anisotropic conductive film may further include a silane coupling agent.

Examples of the silane coupling agent may include at least one selected from the group consisting of a fluorine-containing polymerizable silicon compound such as vinyltrimethoxysilane, vinyltriethoxysilane, and (meth) acrylic acid Oxypropyltrimethoxysilane; epoxidized silicon compounds, such as 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, and 2- (3,4 -Epoxycyclohexyl) ethyltrimethoxysilane; silicon compounds containing amino groups, such as 3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, and N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane; and 3-chloropropyltrimethoxysilane.

In one embodiment, the amount of the silane coupling agent present in the anisotropic conductive film may be 1 wt% to 10 wt% based on the total weight of the anisotropic conductive film composition.

In one embodiment, the anisotropic conductive film may further include additives, such as a polymerization inhibitor, an antioxidant, and / or a thermal stabilizer, to exhibit additional characteristics without degrading its important characteristics. In terms of solid content, the additive may be present in the anisotropic conductive film composition in an amount of, for example, 0.01 wt% to 10 wt% based on the total weight of the anisotropic conductive film composition.

Examples of the polymerization inhibitor may include hydroquinone, hydroquinone monomethyl ether, p-benzoquinone, phenothiazine, and mixtures thereof. Antioxidants may contain, for example, phenol Compounds, hydroxycinnamate compounds, and the like. Examples of the antioxidant may include tetra- (methylene- (3,5-di-tert-butyl-4-hydroxycinnamate) methane, 3,5-bis (1,1-dimethylethyl) -4 -Hydroxyphenylpropionate thiol di-2,1-ethylene diester and the like.

In one embodiment, the anisotropic conductive film may have a single-layer structure including a single conductive layer. In another embodiment, the anisotropic conductive film may have a multilayer structure including a conductive layer and an insulating layer. For example, the anisotropic conductive film may have a multilayer structure including an insulating layer stacked on a conductive layer.

As used herein, the term "stacked" means that one layer is formed on one surface of any layer and is interchangeable with the terms "coated" or "laminated." In a multilayer anisotropic conductive film including a conductive layer and an insulating layer, each layer is an independent layer. Therefore, it is possible to prepare an anisotropic conductive film having suitable fluidity without disturbing the compression of the conductive particles.

Meanwhile, if the anisotropic conductive film has a multilayer structure including a conductive layer and an insulating layer, the insulating layer may include all components in the conductive layer except for the conductive particles. Each component of the conductive layer has been explained previously. The content of each component of the anisotropic conductive film is controlled so that the final weight ratio of the components is within the range explained above based on the total weight of the conductive layer and the insulating layer.

In one embodiment, the anisotropic conductive film may be used in a chip on glass (COG) mounting method.

Another embodiment relates to a method of manufacturing an anisotropic conductive film according to the above embodiments.

No special equipment or equipment is required to manufacture the anisotropic conductive film. For example Said that the anisotropic conductive film can be obtained by dissolving the anisotropic conductive composition according to the above embodiment in an organic solvent such as toluene; stirring the dissolved composition at a certain rate for a predetermined period of time to avoid conductive particle powder Applying the composition to a release film to a certain thickness, for example, 5 to 50 microns; and drying the composition for a sufficient time to allow the organic solvent to evaporate.

Another embodiment relates to a connection structure. In one embodiment, the connection structure may include a first connection member including a first electrode, a second connection member including a second electrode, and a first connection member and a second connection member disposed between the first connection member and the second connection member and connecting the first The anisotropic conductive film according to the above embodiment with one electrode connected to the second electrode.

Each of the first connection member and the second connection member may include an electrode for electrical connection. For example, each of the first connection member and the second connection member may include a glass substrate, a plastic substrate, a printed circuit board, a ceramic circuit board, a flexible circuit board, a semiconductor silicon chip, an IC chip, a driver IC chip, and the like, and formed thereon. An electrode, such as an indium tin oxide (ITO) electrode or an indium zinc oxide (IZO) electrode. In one embodiment, one of the first connection member and the second connection member may be an IC wafer or a driver IC wafer, and the other may be a glass substrate.

Referring to FIG. 1, the connection structure 30 includes: a first connection member 50 including a first electrode 70, a second connection member 60 including a second electrode 80, and disposed between the first connection member 50 and the second connection member 60 and The first electrode 70 is connected to the anisotropic conductive film 10 of the second electrode 80 via the conductive particles 3. 30 in the connection structure Among them, the first connection member 50 including the first electrode 70 and the second connection member 60 including the second electrode 80 may be bonded to each other via the anisotropic conductive film 10 including the conductive particles 3 according to the embodiment. The anisotropic conductive film 10 is disposed between the first connection member 50 and the second connection member 60 and connects the first electrode 70 to the second electrode 80.

Next, the present invention will be described in more detail with reference to some examples. It should be understood, however, that these examples are provided for illustrative purposes only and that these examples should not be construed as limiting the invention in any way. The following examples and comparative examples are provided to highlight the features of one or more embodiments, but it should be understood that these examples and comparative examples should not be construed as limiting the scope of the examples, nor should the comparative examples be interpreted as Out of range. In addition, it should be understood that the examples are not limited to the specific details described in the examples and comparative examples.

The anisotropic conductive films in the following examples and comparative examples are each an anisotropic conductive film for connecting an ordinary glass plate to an IC, and have a double layer including a conductive layer containing conductive particles and an insulating layer containing no conductive particles. structure. However, these anisotropic conductive films are not provided as preferred embodiments, and the scope of the embodiments of the present invention is not limited thereto.

Examples

Example 1

1. Preparation of a conductive layer

21.5 wt% of biphenylfluorene-based adhesive resin (FX-293, Nippon Steel Chemical, Tg: 165 ° C, molecular weight: 45,000), 21.5 wt% epoxy resin (Celloxide 2021P, Daicel Corporation) and 14wt% silicon dioxide as an inorganic filler with a diameter of 50nm and a surface treated with phenylamino groups (YA050C, Admatech) 3% by weight of a cationic curing agent (SI-B3A, Sanshin Chemical Co., Ltd.) and 40% by weight of conductive particles (KSFD, average diameter 3.0 micron, NCI) are mixed to prepare a conductive layer composition . The conductive layer composition was applied to a release film, followed by drying in a dryer at 60 ° C. for 5 minutes to volatilize the solvent, thereby obtaining a dry conductive film having a thickness of 6 μm.

2. Preparation of insulation layer

In the same manner as the conductive layer, but without using conductive particles, a dry insulating layer having a thickness of 12 μm was prepared.

3. Preparation of anisotropic conductive film

The prepared conductive layer and insulating layer were adhered together at 40 ° C. under a load of 1 MPa through a lamination process to obtain an anisotropic conductive film (thickness: 18 μm). The obtained anisotropic conductive film has a double-layer structure, in which an insulating layer is stacked on the conductive layer. The final content of each component in the anisotropic conductive film is 31 wt% of biphenylfluorene-based adhesive resin (FX-293, Nippon Steel Chemical Co., Tg: 165 ° C, molecular weight: 45,000), 31 wt% epoxy Resin (Celloxide 2021P, Daicel Corporation), 20% by weight of inorganic filler as 50nm in diameter and phenylamino-treated silicon dioxide (YA050C, Ada Technology), 4% by weight of cationic curing agent (SI-B3A, Sanxin Chemical Co., Ltd.) and 13wt% conductive particles (KSFD, average diameter 3.0 micron, NCI).

In each of the following Examples 2 and 3, and Comparative Examples 1 and 2, the two-layer anisotropic conductive film (thickness: 18 micrometers) including the insulating layer stacked on the conductive layer was the same as in Example 1. Way of preparation. In each of Examples 2 and 3 and Comparative Examples 1 and 2, the composition was the same as that of the conductive layer, but the insulating layer was prepared without using conductive particles. To avoid repetitive explanations, in each of Examples 2 and 3 and Comparative Examples 1 and 2, only the composition of the conductive layer containing the conductive particles and the composition of each component in the anisotropic conductive film finally prepared will be described. Content and repeated explanations will be omitted.

Example 2

The anisotropic conductive film of Example 2 was prepared in the same manner as in Example 1, except that a 16% by weight biphenylfluorene-based adhesive resin (FX-293, Nippon Steel & Chemical Corporation, Tg: 165 ° C, molecular weight: 45,000 ), 16wt% epoxy resin (Celloxide 2021P, Daicel), and 25wt% silicon dioxide (YA050C, Ada Technology) with a diameter of 50nm as an inorganic filler and a surface treated with phenylamino.

The final content of each component in the anisotropic conductive film is 23 wt% of biphenylfluorene-based adhesive resin (FX-293, Nippon Steel Chemical Co., Tg: 165 ° C, molecular weight: 45,000), 23 wt% epoxy Resin (Celloxide 2021P, Daicel Corporation), 36% by weight of inorganic filler as 50nm in diameter and phenylamino-treated silicon dioxide (YA050C, Ada Technology), 4% by weight of cationic curing agent (SI-B3A, Sanxin Chemical Co., Ltd.) and 13wt% conductive particles (KSFD, average diameter 3.0 micron, NCI).

Example 3

The anisotropic conductive film of Example 3 was prepared in the same manner as in Example 1, except that a 14.5% by weight biphenylfluorene-based adhesive resin (FX-293, Nippon Steel Chemical Co., Ltd., Tg: 165 ° C, molecular weight: 45,000), 14.5% by weight of epoxy resin (Celloxide 2021P, Daicel Corporation), and 28% by weight of inorganic filler as silica with a diameter of 50 nm and a surface treated with phenylamino groups (YA050C, Ada Technology).

The final content of each component in the anisotropic conductive film is 21 wt% biphenylfluorene-based adhesive resin (FX-293, Nippon Steel Chemical Co., Tg: 165 ° C, molecular weight: 45,000), 21 wt% epoxy Resin (Celloxide 2021P, Daicel Corporation), 40% by weight of inorganic filler, 50nm in diameter and phenylamino-treated silicon dioxide (YA050C, Ada Technology), 4% by weight of cationic curing agent (SI-B3A, Sanxin Chemical Co., Ltd.) and 13wt% conductive particles (KSFD, average diameter 3.0 micron, NCI).

Comparative Example 1

The anisotropic conductive film of Comparative Example 1 was prepared in the same manner as Example 1, except that a 27% by weight biphenylfluorene-based adhesive resin (FX-293, Nippon Steel Chemical Co., Ltd., Tg: 165 ° C, molecular weight: 45,000), 27% by weight of epoxy resin (Celloxide 2021P, Daicel) and 3% by weight of inorganic filler as silica with a diameter of 50nm and a surface treated with phenylamino groups (YA050C, Ada Technology).

The final content of each component in the anisotropic conductive film is 39% by weight of biphenylhydrazone Binder-like resin (FX-293, Nippon Steel Chemical Corporation, Tg: 165 ° C, molecular weight: 45,000), 39 wt% epoxy resin (Celloxide 2021P, Daicel Corporation), 4 wt% inorganic filler, 4 wt% Cationic curing agent (SI-B3A, Sanxin Chemical Co., Ltd.) and 13wt% conductive particles (KSFD, average diameter 3.0 micron, NCI).

Comparative Example 2

The anisotropic conductive film of Comparative Example 2 was prepared in the same manner as in Example 1, except that a biphenylfluorene-based adhesive resin (FX-293, Nippon Steel Chemical Co., Ltd., Tg: 165 ° C, molecular weight: 45,000), 11 wt% epoxy resin (Celloxide 2021P, Daicel), and 35 wt% as an inorganic filler is 50 nm in diameter and the surface is phenylamino-treated silicon dioxide (YA050C, Ada Technology).

The final content of each component in the anisotropic conductive film is 16wt% of biphenylfluorene-based adhesive resin (FX-293, Nippon Steel Chemical Co., Tg: 165 ° C, molecular weight: 45,000), 16wt% epoxy Resin (Celloxide 2021P, Daicel Corporation), 51% by weight of inorganic filler as 50nm in diameter and phenylamino-treated silicon dioxide (YA050C, Ada Technology), 4% by weight of cationic curing agent (SI-B3A, Sanxin Chemical Co., Ltd.) and 13wt% conductive particles (KSFD, average diameter 3.0 micron, NCI).

For each anisotropic conductive film prepared in Examples 1 to 3 and Comparative Examples 1 to 2, the respective contents of the components in the conductive layer and the anisotropic conductive film are shown in Tables 1 and 2, respectively. . All contents are expressed in wt%.

Conductive layer

Anisotropic conductive film

Experimental example

Measure or calculate the differential scanning calorimeter (DSC) starting temperature, differential scanning calorimeter (DSC) peak exothermic temperature of the anisotropic conductive films prepared in Examples 1 to 3 and Comparative Examples 1 to 2, Minimum melt viscosity, melt viscosity, melt viscosity change, storage modulus, particle capture rate, initial connection resistance, connection resistance after reliability test, initial short circuit occurrence rate and short circuit occurrence rate after reliability test, etc. and the results are displayed In Table 3.

Experimental Example 1: Calculate DSC starting temperature and DSC peak exothermic temperature of anisotropic conductive film

Under a nitrogen atmosphere, use a Q20 differential scanning calorimeter (TA Instrument Corporation). Division), measuring the respective heat of the anisotropic conductive films prepared in Examples 1 to 3 and Comparative Examples 1 to 2 at a rate of 10 ° C / min in a temperature range of 0 ° C to 250 ° C to calculate a DSC starting temperature And DSC peak exothermic temperature.

Experimental Example 2: Measurement of melt viscosity

For each anisotropic conductive film prepared in Examples 1 to 3 and Comparative Examples 1 to 2, in a temperature range of 0 ° C to 250 ° C, a heating rate of 10 ° C / min, 5% stress, and 1.0 The melt viscosity of the anisotropic conductive film was measured at a frequency of rad / sec using a ARES G2 rheometer (TA Instruments) for a 150-micron-thick sample.

Experimental Example 3: Calculating Melt Viscosity Changes

The melt viscosity changes of the anisotropic conductive films prepared in Examples 1 to 3 and Comparative Examples 1 to 2 were calculated by the ARES G2 rheometer (TA Instruments Corporation) according to the following Equation 1: [Equation 1] Melt viscosity Change = | melt viscosity of film at 75 ° C-melt viscosity of film at 55 ° C | / (75 ° C-55 ° C).

Experimental Example 4: Measurement of storage modulus

The anisotropic conductive films prepared in Examples 1 to 3 and Comparative Examples 1 to 2 were each kept in a hot air circulation oven at 150 ° C for 2 hours, and then within a temperature range of 0 ° C to 100 ° C and 5 ° C / The storage modulus was measured using a dynamic mechanical analyzer Q800 (TA Instruments) at a temperature rise rate of min at 30 ° C.

Experimental Example 5: Measuring Particle Capture Rate

For each anisotropic conductive film prepared in Examples 1 to 3 and Comparative Examples 1 to 2, before the pre-compression, the anisotropic conductivity per unit area (mm ² ) was measured by an automatic particle measurement device (ZOOTUS). The number of conductive particles in the film.

Next, an anisotropic conductive film was placed on a glass substrate (NeoView Kolon Co., Ltd.) on which a bump area of 1,200 square micrometers and a thickness of 2,000 Angstroms was deposited. Indium tin oxide circuit. The anisotropic conductive film was pre-compressed at 1 MPa at 70 ° C for 1 second, and the release film was removed. An IC wafer (Samsung Electronics Co., Ltd., System LSI Division) with a bump area of 1,200 square micrometers and a thickness of 1.5T was placed on the anisotropic conductive film, The anisotropic conductive film was subjected to main compression at 70 MPa and 150 ° C for 5 seconds. Use an automatic particle measurement device to measure the number of conductive particles per unit area (mm ² ) of the connecting part, and calculate the particle capture rate according to the following Equation 2: [Equation 2] Particle capture rate (%) = [per unit area mm ² ) the number of conductive particles in the connection part / the number of conductive particles per unit area (mm ² ) of anisotropic conductive film before pre-compression] × 100%

Experimental Example 6: Measure initial connection resistance and connection resistance after reliability test

The anisotropic conductive films prepared in Examples 1 to 3 and Comparative Examples 1 to 2 were respectively placed on a glass substrate, and projections were deposited on the glass substrate. The indium tin oxide circuit has a block area of 1,200 square microns and a thickness of 2,000 Angstroms. The anisotropic conductive film was pre-compressed at 1 MPa at 70 ° C for 1 second, and the release film was removed. An IC wafer (Samsung Electronics Co., Ltd., System LSI Branch) having a bump area of 1,200 square micrometers and a thickness of 1.5 T was placed on the anisotropic conductive film, and the anisotropic conductive film was subjected to 150 ℃ at 70 MPa at 70 MPa. A main compression was performed and held for 5 seconds, thereby preparing a sample. Next, the connection resistance of each sample was measured by a 4-point probe method using a resistance measuring device 20 multimeter (Keithley instrument). This exhibits the initial connection resistance. Next, the sample prepared by the main compression was held at 85 ° C. and 85% relative humidity for 500 hours and the resistance was measured in the same manner as described above. This shows the connection resistance after the reliability test.

During the measurement, 1 mA was applied to the resistance measuring device, and the resistance was calculated from the voltage of the device, and then the measured values were averaged.

Experimental Example 7: Measuring the initial short-circuit occurrence rate and the short-circuit occurrence rate after the reliability test

The anisotropic conductive films prepared in Examples 1 to 3 and Comparative Examples 1 to 2 were cut into 2 mm × 25 mm sizes, respectively, and each of the cut films was bonded to an insulation resistance evaluation material. In detail, the anisotropic conductive film was placed on a 0.5 mm-thick glass substrate, heated and compressed at 70 ° C., 1 MPa, and 1 second, and the release film was removed. And the wafer (wafer length 19.5mm, wafer width 1.5mm, bump pitch 8 microns) was placed on the anisotropic conductive film, and the anisotropic conductive film was subjected to main compression at 150 ° C, 70MPa, 5 seconds to Preparation of circuit devices. Next, apply 50V to the circuit device and use two at 38 points. The end method checks the occurrence of a short circuit, thereby measuring the initial short circuit occurrence rate. Thereafter, the circuit device was kept at 85 ° C. and 85% relative humidity for 500 hours to measure a short circuit occurrence rate after the reliability test.

Experimental Example 8: Measurement of initial appearance and appearance after reliability test

The initial appearance of the anisotropic conductive films prepared in Examples 1 to 3 and Comparative Examples 1 to 2 was measured from a sensory test ranging from 5 (good) to 0 (poor). Then, the anisotropic conductive film was held at 85 ° C. and 85% relative humidity for 500 hours to measure the appearance after the reliability test by sensory evaluation ranging from 5 (good) to 0 (poor).

As shown in Table 3, the DSC starting temperature and the DSC peak exothermic temperature can be adjusted by controlling the content of the inorganic filler while using a cationic curing agent. In addition, by including at least 20 wt% of an inorganic filler in the anisotropic conductive film, In order to reduce the melt viscosity change and control the fluidity of the anisotropic conductive film.

In addition, by controlling the content of the inorganic filler in the anisotropic conductive film to 40% by weight or less, the initial connection resistance and the connection resistance after the reliability test can be reduced. In Examples 1 to 3, the storage modulus was each in the range of 2.5 GPa to 5 GPa, and the particle capture rates each exhibited good results. In addition, both the initial short-circuit occurrence rate and the short-circuit occurrence rate after the reliability test are improved, and the initial appearance and the appearance after the reliability test are also good.

Example embodiments have been disclosed herein and, although specific terms are employed, these terms are used and explained in a general and descriptive sense only and not for purposes of limitation. In some cases, as of the filing of this application, it will be apparent to those of ordinary skill in the art that, unless specifically stated otherwise, the features, characteristics, and / or elements described in connection with a particular embodiment may be used alone or in combination with other embodiments. The described features, characteristics, and / or elements are used in combination. Accordingly, it will be understood by those skilled in the art that various changes in form and detail may be made without departing from the spirit and scope of the invention as set forth in the appended claims.

Claims (12)

An anisotropic conductive film includes: an adhesive resin, including a fluorene-based phenoxy resin; an epoxy resin; and an inorganic filler of 15 wt% to 40.44 wt%, which is based on the composition of the anisotropic conductive film Based on the total weight; conductive particles; and a curing agent of 1% to 10% by weight based on the total weight of the composition of the anisotropic conductive film, the curing agent including a fluorene-based curing agent represented by the following formula 1 Or a quaternary ammonium curing agent represented by the following formula 2:

Wherein, in Formula 1, R ₁ to R ₅ are each independently hydrogen, C ₁ to C ₆ alkyl, ethenyl, alkoxycarbonyl, benzyl or benzooxycarbonyl, and R ₆ and R ₇ Each is independently alkyl, benzyl, o-methylbenzyl, m-methylbenzyl, p-methylbenzyl or naphthylmethyl,

Wherein, in Formula 2, R ₈ , R ₉ , R _10, and R ₁₁ are each independently a substituted or unsubstituted C ₁ to C ₆ alkyl group or C ₆ to C ₂₀ aryl group, and M ^- each independently be a ^{_{Cl -, BF 4 -, PF}} 6 -, N (CF 3 SO 2) 2 -, CH 3 CO 2 -, CF 3 CO 2 -, CF 3 SO 3 -, HSO 4 -, SO 4 2-, SbF ₆ ^- or _{B (C 6 F 5) 4} -; wherein the anisotropic conductive film having a difference of 75 deg.] C to 90 deg.] C starting temperature scanning calorimeter and 0Pa. s / ℃ to 300Pa. The melt viscosity change at s / ° C expressed by the following equation 1: Equation 1 melt viscosity change = | melt viscosity of the film at 75 ° C-melt viscosity of the film at 55 ° C | / (75 ° C-55 ° C). The anisotropic conductive film according to item 1 of the patent application range, wherein the minimum melt viscosity of the anisotropic conductive film is 10,000Pa. s to 100,000Pa. s. The anisotropic conductive film according to item 1 of the scope of application for a patent, wherein a differential scanning calorimeter peak exothermic temperature of the anisotropic conductive film is 90 ° C to 105 ° C. The anisotropic conductive film according to item 1 of the scope of patent application, wherein the storage modulus of the anisotropic conductive film is 2.5 GPa to 5 GPa when cured to a curing rate of 90% or more. The anisotropic conductive film according to item 1 of the scope of patent application, wherein the anisotropic conductive film is pre-compressed at a load of 1.0 MPa to 3.0 MPa at 50 ° C to 80 ° C for 1 second to 3 seconds and at 50MPa at 120 ° C to 160 ° C. Measured after 5 to 6 seconds of main compression under a load of 90 MPa, the anisotropic conductive film has a particle capture rate of 20% to 50% represented by the following equation 2: Equation 2 particle capture rate = [after the main compression Number of conductive particles per unit area connected portion / Number of conductive particles per unit area of anisotropic conductive film before pre-compression] × 100%. The anisotropic conductive film according to item 1 of the scope of patent application, wherein the anisotropic conductive film is pre-compressed at a load of 1.0 MPa to 3.0 MPa at 50 ° C. to 80 ° C. for 1 second to 3 seconds and at 50 MPa at 120 ° C. to 160 ° C. The main compression is performed for 5 seconds to 6 seconds under a load of 90 MPa, and then the anisotropic conductive film is measured after being held at 85 ° C. and 85% relative humidity for 500 hours. The connection resistance is 0.5Ω or less. The anisotropic conductive film according to item 1 of the scope of patent application, wherein the anisotropic conductive film is precompressed at a load of 1.0 MPa to 3.0 MPa at 50 ° C. to 80 ° C. for 1 second to 3 seconds and at 50 MPa at 120 ° C. to 160 ° C. Measured after 5 to 6 seconds of main compression under a load of 90 MPa, the initial short-circuit occurrence rate of the anisotropic conductive film was 0%. The anisotropic conductive film according to item 1 of the scope of patent application, wherein the anisotropic conductive film is precompressed at a load of 1.0 MPa to 3.0 MPa at 50 ° C. to 80 ° C. for 1 second to 3 seconds and at 50 MPa at 120 ° C. to 160 ° C. The main compression is performed for 5 seconds to 6 seconds under a load of 90 MPa, and then the anisotropic conductive film is measured after being held at 85 ° C. and 85% relative humidity for 500 hours. The short-circuit occurrence rate is 0%. The anisotropic conductive film according to item 1 of the patent application range, wherein the inorganic filler includes silicon dioxide having an average particle diameter of 10 nm to 500 nm. The anisotropic conductive film according to item 9 of the scope of patent application, wherein the surface of the inorganic filler is treated with at least one chemical group selected from the group consisting of: phenylamino, vinyl, benzene Group, epoxy group and methacrylic group. The anisotropic conductive film according to item 1 of the scope of application for a patent, wherein the anisotropic conductive film is used in a method for bonding and mounting a crystal glass. A connection structure includes: a first connection member including a first electrode; a second connection member including a second electrode; and the anisotropic conductive film according to any one of claims 1 to 11 of a patent application range. Wherein the anisotropic conductive film is disposed between the first connection member and the second connection member and connects the first electrode to the second electrode.