KR101900542B1 - Composition for use of an anisotropic conductive film, an anisotropic conductive film thereof and a display device using the same - Google Patents

Abstract

One embodiment of the present invention is directed to a silsesquioxane compound comprising an oxetane group-containing silsesquioxane compound and a compound represented by the following general formula (1), wherein the silsesquioxane compound has 1 to 14 By weight based on the total weight of the composition.
[Chemical Formula 1]

In Formula _1, R 1 is hydrogen, C _1-6 alkyl, C _6-14 aryl, -C _1-6 alkyl, C _{6 -14} aryl _{groups, -C (= O) R 8} , -C (= O ) 0R ₉ , and -C (= O) NHR ₁₀ , wherein R ₈ , R ₉ and R ₁₀ are each independently selected from a C _1-6 alkyl group and a C _6-14 aryl group, ;
R ₂ to R ₅ are each hydrogen or a C _1-6 alkyl group;
R ₆ and R ₇ are each independently selected from the group consisting of a C _1-6 alkyl group, a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group substituted or unsubstituted with C _1-6 alkyl, and a naphthylmethyl group, X ₁ is alkylsulfuric acid.
The composition for anisotropic conductive film or the anisotropic conductive film according to one embodiment of the present invention is advantageous in that the fluidity can be controlled to improve the trapping rate of conductive particles, enable low-temperature curing, and provide excellent storage stability and reliability properties have.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an anisotropic conductive film composition, an anisotropic conductive film, and a display device using the same. BACKGROUND ART [0002]

The present invention relates to a composition for an anisotropic conductive film, an anisotropic conductive film and a display device using the same.

Anisotropic conductive film (ACF) generally refers to a film-like adhesive in which conductive particles are dispersed in a resin such as an epoxy resin. An anisotropic conductive film (ACF) is a film-like adhesive in which conductive particles are dispersed in a resin such as epoxy, Means a polymer membrane having anisotropy and adhesion. When the film is placed between the circuit to be connected with the anisotropic conductive film and subjected to a heating and pressing process under a certain condition, the circuit terminals are electrically connected by the conductive particles, and an insulating adhesive resin And the conductive particles are filled independently of each other, thereby providing high insulating properties.

Recently, as display panels have become thinner and higher in resolution, techniques for capturing the largest number of conductive particles at the minimum connection area have been studied. A method of increasing the density of the conductive particles or suppressing the flow of the fluid by containing an excessive amount of the inorganic particles has been studied in order to improve the capture rate of the conductive particles.

Accordingly, it is an object of the present invention to provide an anisotropic conductive film which can be connected at low temperature while effectively suppressing the flow of fluid, and at the same time, has excellent storage stability and reliability.

Japanese Patent Application Laid-Open No. 2004-359830 (published Dec. 14, 2004)

An object of the present invention is to provide an anisotropic conductive film which is capable of curing at low temperature, has an excellent particle capture rate, and is improved in storage stability and reliability properties.

In one embodiment of the present invention, a silsesquioxane compound containing an oxetane group and a compound of the following formula (1), wherein the silsesquioxane compound is contained in an amount of from 1 to 14 By weight based on the total weight of the composition.

[Chemical Formula 1]

In formula _1, R 1 is hydrogen, C _1-6 alkyl, C _6-14 aryl, -C _1-6 alkyl, C _{6 -14} aryl _{groups, -C (= O) R 8} , -C (= O) R ₉ , and -C (= O) NHR ₁₀ , wherein R ₈ , R _9, and R ₁₀ are each independently selected from a C _1-6 alkyl group and a C _6-14 aryl group;

R ₂ to R ₅ are each independently hydrogen or a C _1-6 alkyl group;

R ₆ and R ₇ are each independently selected from the group consisting of a C _1-6 alkyl group, a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group substituted or unsubstituted with C _1-6 alkyl, and a naphthylmethyl group And X < ₁ > is alkyl sulfuric acid.

In another embodiment of the present invention, there is provided a silsesquioxane compound containing an oxetane group, wherein the difference between the exothermic peak temperature on the DSC and the exothermic onset temperature is 10 占 폚 or less and 80 占 폚 to 100 占 폚 Wherein the anisotropic conductive film has a minimum melt viscosity of 10,000 to 200,000 Pa sec.

In another embodiment of the present invention, there is provided a plasma processing apparatus comprising: a first connected member containing a first electrode; A second connected member containing a second electrode; And a display device connected by the anisotropic conductive film described herein, which is located between the first connected member and the second connected member and connects the first electrode and the second electrode.

The composition for anisotropic conductive film or the anisotropic conductive film according to one embodiment of the present invention is advantageous in that the fluidity can be controlled to improve the trapping rate of conductive particles, enable low-temperature curing, and provide excellent storage stability and reliability properties have.

1 shows a first embodiment of the present invention in which a first connected member 50 including a first electrode 70, a second connected member 60 including a second electrode 80, A display device according to an embodiment of the present invention, comprising an anisotropic conductive film (10) as described herein, which is disposed between two connected members and connects the first electrode and the second electrode via conductive particles (3) Fig.
2 is a graph of a differential scanning calorimeter (DSC) of an anisotropic conductive film according to Examples 1 to 3 of the present invention.

Hereinafter, the present invention will be described in more detail. Those skilled in the art will appreciate that various modifications, additions, and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

One embodiment of the present invention is directed to a silsesquioxane compound comprising an oxetane group-containing silsesquioxane compound and a compound represented by the following general formula (1), wherein the silsesquioxane compound has 1 to 14 By weight based on the total weight of the composition.

[Chemical Formula 1]

In formula _1, R 1 is hydrogen, C _1-6 alkyl, C _6-14 aryl, -C _1-6 alkyl, C _{6 -14} aryl _{groups, -C (= O) R 8} , -C (= O) R ₉ , and -C (= O) NHR ₁₀ , wherein R ₈ , R _9, and R ₁₀ are each independently selected from a C _1-6 alkyl group and a C _6-14 aryl group;

R ₂ to R ₅ are each hydrogen or a C _1-6 alkyl group;

R ₆ and R ₇ are each independently selected from the group consisting of a C _1-6 alkyl group, a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group substituted or unsubstituted with C _1-6 alkyl, and a naphthylmethyl group, X ₁ is alkylsulfuric acid.

Specifically, in the formula 1 R ₁ is hydrogen, C ₁ to an alkyl group or an acetyl group of the C _4, R ₂ to R ₅ are alkyl groups each hydrogen or C ₁ to C _4, R ₆ and R ₇ is a methyl group or Benzyl group. More specifically, each of R ₁ to R ₅ may be a hydrogen atom, and R ₆ and R ₇ may be a methyl group. X < ₁ > may be methylsulfuric acid.

The compound of formula (1) has the effect of complementing the storage stability of a composition for anisotropic conductive film containing a silsesquioxane compound containing an oxetane group. Specifically, the compound of formula (I) captures cations generated from the curing agent to inhibit the progress of curing at room temperature, thereby contributing to improvement of the storage stability of the composition for anisotropic conductive film. In the case of the anisotropic conductive film containing the compound of formula (1), the difference between the exothermic peak temperature on the DSC and the exothermic onset temperature is low, so that the low temperature fast curing can be achieved. Can be improved.

The compound of Formula 1 may be contained in an amount of 0.01 to 10% by weight based on the total solid weight of the composition for anisotropic conductive films. Specifically 0.03 to 5% by weight, and more specifically 0.01 to 1% by weight. The storage stability can be improved without hindering the low temperature fast curing of the anisotropic conductive film in the above range.

The part of the silsesquioxane compound, the molecular formula R-SiO process chamber of the extractor dioxane compound R represented by the _3/2 group-containing the oxetane meant a compound substituted with an oxetane. Specifically, the silsesquioxane compound containing oxetane group may have a structure represented by the following formula (2). In addition, the silsesquioxane compound containing oxetane group may include the structure of Formula 2 as a repeating unit.

(2)

Wherein R ₁₁ is an oxetane group and R ₁₂ is hydrogen, a substituted or unsubstituted alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group, an alkylaryl group, a heteroalkyl group, a heterocycloalkyl group, or an alkenyl group X and y are in a molar ratio of 0 < x < 1.0 and 0 < y < 1.0 and x + y = 1. In one embodiment, x may range from 0.5? X? 1.0. When x is within the above range, the oxetane group is sufficiently contained, and when the curing is carried out, the ring-opening reaction thereof is sufficiently generated, and there is an advantage that the curing at low temperature can be achieved.

Unless defined otherwise herein, 'substituted' means that a hydrogen atom in the compound is replaced by a halogen atom (F, Br, Cl, I), a halogenated alkyl, a hydroxy group, an alkoxy group, a nitro group, a cyano group, A carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C ₁ to C ₂₀ alkyl group, a C ₆ to C ₂₀ alkyl group, a substituted or unsubstituted C ₆ to C ₂₀ alkoxy group, to about C ₃₀ aryl, C ₇ to C ₃₀ arylalkyl group, C ₁ to C ₂₀ alkoxy group, C ₁ to C ₂₀ heteroaryl group, a C ₃ to C ₂₀ heteroaryl group, a C ₃ to C ₂₀ cycloalkyl group, a (meth) Acrylate group, a C ₂ to C ₂₀ heterocycloalkyl group, and combinations thereof.

As used herein, the term "alkyl group" means a straight or branched chain fully saturated or partially unsaturated hydrocarbon group having 1 to 20 carbon atoms, and "cycloalkyl group" means a hydrocarbon group having a fully saturated or partially unsaturated ring having 3 to 20 carbon atoms do. The 'heteroalkyl group' means a fully saturated or partially unsaturated hydrocarbon group of 1 to 20 carbon atoms containing a hetero atom other than carbon or hydrogen in the main chain, and the 'heterocycloalkyl group' Means a hydrocarbon group having a fully saturated or partially unsaturated ring of 2 to 20 carbon atoms containing an atom.

The silsesquioxane-containing silsesquioxane compound has a polyhedral oligomeric silsesquioxane (POS) structure represented by the following Chemical Formulas 3 to 6, a random structure represented by Chemical Formula 7, a ladder ) Structure, or a partial cage structure represented by the following formula (9).

(3)

[Chemical Formula 4]

[Chemical Formula 5]

[Chemical Formula 6]

(7)

[Chemical Formula 8]

[Chemical Formula 9]

In the general formulas (3) to (9), R is independently an oxetane group, hydrogen, a substituted or unsubstituted alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group, an alkylaryl group, a heteroalkyl group, a heterocycloalkyl group or an alkenyl group to be.

Specifically, the silsesquioxane compound containing the oxetane group may include the polyhedral oligomeric silsesquioxane structure of the above formulas (3) to (6).

The silsesquioxane-containing silsesquioxane compound may be contained in an amount of 1 to 14% by weight based on the total solid weight of the composition for anisotropic conductive films. Specifically 5 to 10% by weight. Within this range, the anisotropic conductive film has an appropriate fluidity so that the particle attraction rate can be improved while the indentation characteristic is excellent, and the connection reliability can be also improved.

In one embodiment, the composition for the anisotropic conductive film may further include a binder resin, an epoxy resin, conductive particles and a curing agent, in addition to the silsesquioxane compound containing an oxetane group and the compound represented by the following formula (1).

Examples of the binder resin include polyimide resin, polyamide resin, phenoxy resin, polymethacrylate resin, polyacrylate resin, polyurethane resin, polyester resin, polyester urethane resin, polyvinyl butyral resin, styrene- Butadiene rubber (NBR) and its hydrogenated product, or a combination thereof, and a styrene-butylene-styrene (SBS) resin and an epoxy modified product, a styrene- . Specifically, a phenoxy resin can be used as the binder resin, and more specifically, a fluorene-based phenoxy resin can be used. The fluorene-based phenoxy resin can be used without limitation as long as it is a phenoxy resin containing a fluorene structure.

The binder resin may be contained in an amount of 20 to 70% by weight based on the total solid weight of the composition for anisotropic conductive films. Specifically 30 to 60% by weight, and more specifically 30 to 50% by weight.

Examples of the epoxy resin include bisphenol type epoxy resins such as bisphenol A type epoxy resin, bisphenol A type epoxy acrylate resin, bisphenol F type epoxy resin, bisphenol AD type epoxy resin, bisphenol E type epoxy resin and bisphenol S type epoxy resin; Aromatic epoxy resins such as polyglycidyl ether epoxy resin, polyglycidyl ester epoxy resin and naphthalene epoxy resin; Alicyclic epoxy resins; Novolak type epoxy resins such as cresol novolak type epoxy resin and phenol novolak type epoxy resin; Glycidylamine type epoxy resin; Glycidyl ester-based epoxy resin; Biphenyl diglycidyl ether epoxy resin; Hydrogenated epoxy resins, and the like. These may be used alone or in combination of two or more. Specifically, an alicyclic epoxy resin can be used. The alicyclic epoxy resin is close to the alicyclic ring and has an epoxy structure. Therefore, the ring opening reaction is fast and the curing reaction is better than other epoxy resins. The alicyclic epoxy resin may be used without limitation as long as it has a structure in which a direct bond is bonded to an alicyclic ring or an epoxy structure exists through another linking group. In one example, alicyclic epoxy resins of the following general formulas (10) to (13) can be used.

[Chemical formula 10]

(11)

[Chemical Formula 12]

[Chemical Formula 13]

In the formulas 11 to 13, n, s, t, u, v, m and f may each independently be an integer of 1 to 50, and R may be an alkyl group, an acetyl group, an alkoxy group or a carbonyl group. More specifically, n, s, t, u, v, m and f may each independently be an integer of 1 to 25, and R may be an alkyl group, an acetyl group or an alkoxy group.

The epoxy resin may be contained in an amount of 20 to 50% by weight, specifically 25 to 40% by weight based on the total solid weight of the composition for anisotropic conductive films. Within the above range, the anisotropic conductive film has excellent properties such as adhesion and appearance, and can be stable after reliability.

The curing agent can be used without particular limitation as far as it can cure the epoxy resin to form an anisotropic conductive film. As the non-limiting examples of the curing agent, an acid anhydride type, amine type, imidazole type, isocyanate type, amide type, hydrazide type, phenol type, cation type and the like can be used. Specifically, the curing agent may be a cationic curing agent or an amine curing agent. The cationic curing agent has an advantage that the reaction can be performed very rapidly, and the amine curing agent is advantageous from the standpoint of stability, so that the content of the stabilizing agent can be reduced. In one embodiment, the curing agent may be a sulphonium-based curing agent, for example, a sulfonium-based curing agent represented by the following general formula (14), (15)

[Chemical Formula 14]

[Chemical Formula 15]

[Chemical Formula 16]

In Formula 14, R ₁₃ is hydrogen, C _1-6 alkyl, C _6-14 aryl, -C _1-6 alkyl, C _{6 -14} aryl _{groups, -C (= O) R 25} , -C (= O ) 0R ₂₆ , and -C (= O) NHR ₂₇ , wherein R ₂₅ , R ₂₆ and R ₂₇ are each independently selected from a C _1-6 alkyl group and a C _6-14 aryl group, ;

R ₁₄ to R ₁₇ are each independently hydrogen or a C _1-6 alkyl group;

R ₁₈ and R ₁₉ are each independently selected from the group consisting of a C _1-6 alkyl group, a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group substituted or unsubstituted with a C _1-6 alkyl group, and a naphthylmethyl group Y ₁ ^- is AsF ₆ , SbF ₆ , SbCl ₆ , (C ₆ F ₅ ) ₄ B, SbF ₅ (OH), PF ₆ or BF ₄ .

Further, in formula 15, R ₂₀ is hydrogen, R ₂₁ is a C _1-6 alkyl group, R ₂₂ is -OH, -OC (= O) R 25 or -OC (= O) OR ₂₆ (wherein, R _25, and And R ₂₆ is each a C _1-6 alkyl group) and Y ₂ ^- is AsF ₆ , SbF ₆ , SbCl ₆ , (C ₆ F ₅ ) ₄ B, SbF ₅ (OH), PF ₆ or BF ₄ .

In Formula 16, R ₂₃ and R ₂₄ each independently represent a C _1-20 alkyl group, a C _3-12 alkenyl group, a C _6-20 aryl group, a C _7-20 alkaryl group, a C _7-20 alkylaryl group, A C _1-20 alkanol group and a C _5-20 cycloalkyl group, Ar ₁ is a substituted or unsubstituted C _6-20 aryl group, Ar ₂ is a substituted or unsubstituted C _6-20 arylene group And Y ₃ ^- is BF ₄ , PF ₆ , AsF ₆ , SbF ₆ , SbCl ₆ , (C ₆ F ₅ ) ₄ B, SbF ₅ (OH), HSO ₄ , p-CH ₃ C ₆ H ₄ SO ₃ , HCO ₃ , H ₂ PO ₄ , CH ₃ COO and a halogen anion. The curing agent may be contained in an amount of 1 to 10% by weight based on the total solid weight of the anisotropic conductive film, and may be included in an amount of 1 to 5% by weight, based on the total solid weight of the anisotropic conductive film. have. Within the above range, a sufficient reaction required for curing takes place, and excellent physical properties can be expected in adhesion strength, reliability, etc. after bonding through formation of an appropriate molecular weight.

The conductive particles are not particularly limited and conductive particles conventionally used in the art can be used. Non-limiting examples of the conductive particles include metal particles including Au, Ag, Ni, Cu, solder, and the like; carbon; Particles comprising a resin including polyethylene, polypropylene, polyester, polystyrene, polyvinyl alcohol or the like and particles of the modified resin coated with a metal such as Au, Ag, Ni or the like; Insulating particles coated with insulating particles, and the like. The size of the conductive particles may be in the range of, for example, 1 탆 to 20 탆, specifically 1 탆 to 10 탆, depending on the pitch of the applied circuit.

The conductive particles may be contained in an amount of 1 to 30% by weight, specifically 10 to 25% by weight, based on the total solid weight of the composition for anisotropic conductive films. In this range, the conductive particles can be easily pressed between the terminals to ensure stable connection reliability, and the connection resistance can be reduced by improving the electrical conductivity.

In one embodiment, the composition for the anisotropic conductive film may further include a silane coupling agent in addition to the above components.

Examples of the silane coupling agent include polymerizable fluorinated group-containing silicon compounds such as vinyltrimethoxysilane, vinyltriethoxysilane and (meth) acryloxypropyltrimethoxysilane; Silicon compounds having an epoxy structure such as 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, and 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane; Containing silicon compounds such as 3-aminopropyltrimethoxysilane, N- (2-aminoethyl) -3-aminopropyltrimethoxysilane and N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane. ; And 3-chloropropyltrimethoxysilane, and the like, but are not limited thereto.

The silane coupling agent may be contained in an amount of 1 to 10% by weight based on the total solid weight of the composition for anisotropic conductive films.

In another embodiment, the composition for the anisotropic conductive film may further contain additives such as a polymerization inhibitor, an antioxidant, a heat stabilizer, and the like in order to provide additional physical properties without impairing the basic physical properties. The additive is not particularly limited, but may be contained in an amount of 0.01 to 10% by weight based on the solid content of the composition for anisotropic conductive films.

Examples of the polymerization inhibitor include hydroquinone, hydroquinone monomethyl ether, p-benzoquinone, phenothiazine, or a mixture thereof. As the antioxidant, a phenolic or hydroxycinnamate-based material can be used. For example, tetrakis- (methylene- (3,5-di-t-butyl-4-hydoxinnamate) methane, 3,5-bis (1,1-dimethylethyl) -4- -2,1-ethanediyl ester and the like can be used.

In another embodiment, there is provided an anisotropic conductive film produced using the composition for anisotropic conductive film. No special apparatus or equipment is required to form the anisotropic conductive film of the present invention. For example, the composition for anisotropic conductive films containing the respective compositions disclosed herein may be liquefied by dissolving in an organic solvent such as toluene, and then agitated for a certain period of time within a speed range at which the conductive particles are not pulverized. For example, 10 to 50 占 퐉, and then dried for a predetermined time to volatilize toluene or the like to obtain an anisotropic conductive film.

Hereinafter, an anisotropic conductive film according to another embodiment of the present invention will be described. Wherein the anisotropic conductive film contains a silsesquioxane compound containing an oxetane group, and the difference between the exothermic peak temperature on the DSC and the exothermic onset temperature is 10 ° C or lower, The minimum melt viscosity may be 10,000 to 200,000 Pa · sec.

The silsesquioxane compound containing an oxetane group may be the same as those described in the previous embodiment.

The difference between the exothermic peak temperature on the thermal differential scanning calorimeter (DSC) and the exothermic onset temperature may be 10 ° C or less, specifically 9 ° C or less. Within this range, low-temperature curing of the anisotropic conductive film can be achieved, and reliability properties can be improved.

The method of measuring the exothermic peak temperature and the exothermic onset temperature on the thermal differential scanning calorimeter is not particularly limited, and a non-limiting example is as follows: The calorific value of the anisotropic conductive film is measured by a thermal differential scanning calorimeter (DSC, TA Instruments Q20 ) At a rate of 10 ° C / min under a nitrogen gas atmosphere at a temperature ranging from -50 ° C to 250 ° C and then tangent to a line where the slope increases at the highest peak on the DSC graph, The temperature at the point of contact with the extension line connecting the starting point and the end point of the heating is measured as the heating start temperature on the DSC and the temperature at which the heating value shows the highest peak is measured as the heating peak temperature on the DSC.

The anisotropic conductive film may have a minimum melt viscosity of from 10,000 to 200,000 Pa · s at 80 ° C to 100 ° C according to the ARES measurement, and may be specifically from 90,000 to 150,000 Pa · s. Within this range, the anisotropic conductive film exhibits appropriate fluidity, so that the coverage of the conductive particles can be improved.

The method of measuring the lowest melt viscosity is not particularly limited and examples are as follows. A sample thickness of 150 占 퐉, a temperature raising rate of 10 占 폚 / min, a stress of 5% , And the melt viscosity of the anisotropic conductive film is measured at 80 DEG C to 100 DEG C at a frequency of 10 rad / sec.

The anisotropic conductive film may further comprise a compound represented by the following formula (1). The compounds of formula (1) are as described in the previous examples.

[Chemical Formula 1]

In formula _1, R 1 is hydrogen, C _1-6 alkyl, C _6-14 aryl, -C _1-6 alkyl, C _{6 -14} aryl _{groups, -C (= O) R 8} , -C (= O) R ₉ , and -C (= O) NHR ₁₀ , wherein R ₈ , R _9, and R ₁₀ are each independently selected from a C _1-6 alkyl group and a C _6-14 aryl group;

R ₂ to R ₅ are each hydrogen or a C _1-6 alkyl group;

R ₆ and R ₇ are each independently selected from the group consisting of a C _1-6 alkyl group, a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group substituted or unsubstituted with C _1-6 alkyl, and a naphthylmethyl group, X ₁ is alkylsulfuric acid.

Further, the anisotropic conductive film may include a binder resin, an epoxy resin, conductive particles, and a curing agent. These components may also be the same as those described in the previous embodiment.

The glass transition temperature (Tg) of the anisotropic conductive film may be 180 ° C to 250 ° C, and may be 190 ° C to 200 ° C. If the glass transition temperature is within the above range, the particle capture rate and indentation characteristics of the anisotropic conductive film can be improved.

The anisotropic conductive film may have a particle trapping rate of 30% to 70% according to Equation 1 measured after the main compression under the condition of 100 to 150, 4 to 7 seconds and 50 to 90 MPa.

[Formula 1]

(Mm ² ) number of conductive particles per unit area (mm ² ) of anisotropically conductive film before compression bonding (%) = (number of conductive particles per unit area (mm ² )

The particle capture rate may be specifically from 35% to 60%. The fluidity of the conductive layer is effectively suppressed within the above range, the conductive particles are sufficiently located on the terminal, the conductivity is improved, and the outflow of the conductive particles is reduced to reduce the short-circuit between the terminals.

The method for measuring the particle capture rate is not particularly limited, and a non-limiting example is as follows. For the prepared anisotropic conductive film, the number of conductive particles (mm ² ) per unit area of the anisotropic conductive film before compression Calculated using an automatic meter. Then, an anisotropic conductive film 1200㎛ bump area ^2, placed on a glass substrate with indium tin oxide having a thickness of 2000Å circuit 70, and then pressurized to 1 seconds and good condition of 1MPa, removing the release film, and a bump area 1200㎛ ^2, thickness 1.5 T of IC chips were placed on the surface of the substrate, and the resultant was compression bonded at 130 to 5 seconds under the condition of 70 MPa. The number of conductive particles (mm ² ) per unit area of the connection site was calculated using a particle automatic meter, Calculate the acquisition rate.

The anisotropically conductive film was subjected to final compression bonding under the conditions of 100 to 150, 4 to 7 seconds and 50 to 90 MPa, and left for 250 hours under the conditions of a temperature of 85 and a relative humidity of 85%. After the reliability evaluation, And may be 0.3 Ω or less.

The anisotropic conductive film having the connection resistance range after the reliability evaluation has an advantage that not only the connection reliability can be improved but also the long-term storage stability can be maintained and used.

The method for measuring the connection resistance after the reliability evaluation is not particularly limited, and a non-limiting example is as follows: An anisotropic conductive film is placed on a glass substrate having an indium tin oxide circuit with a bump area of 1200 탆 ² and a thickness of 2000 Å, 1 sec, and 1 MPa. Then, the release film was removed, IC chips having a bump area of 1200 탆 ² and a thickness of 1.5 T were rolled up, and the specimens were produced by pressing them under the conditions of 130 to 5 seconds and 70 MPa. Using the point probe method, the resistance between four points is measured using a resistance measuring instrument (2000 Multimeter, Keithley) and expressed as an initial connection resistance. Thereafter, the sample was left for 250 hours at a temperature of 85 ° C. and a relative humidity of 85%, and the resistance was measured in the same manner. The resistance measuring device applies 1mA, and the resistance is calculated by the measured voltage and averaged.

In one embodiment, the anisotropic conductive film may be used in a COG (chip on glass) or COF (chip on film) mounting method.

In another embodiment, the anisotropic conductive film may be a structure in which an insulating layer is laminated on one side or both sides of the conductive layer. That is, a two-layer structure in which a conductive layer and an insulating layer are laminated, or a three-layer structure in which a conductive layer is laminated on an insulating layer and an insulating layer is laminated on the conductive layer. Lt; / RTI > stacked layer structure.

The term " lamination " means that another layer is formed on one side of an arbitrary layer and can be used in combination with coating or lamination. In the case of an anisotropic conductive film having a multilayered structure including a conductive layer and an insulating layer separately, since the layer is separated, even if the content of inorganic particles such as silica is high, the conductive particles are not squeezed, The flowability of the composition for the anisotropic conductive film may be affected, so that the anisotropic conductive film having controlled flowability can be produced.

Hereinafter, a display device according to another embodiment of the present invention will be described.

The display device includes: a first connected member containing a first electrode; A second connected member containing a second electrode; And a display device connected by the anisotropic conductive film according to the embodiments described herein, which is located between the first connected member and the second connected member and connects the first electrode and the second electrode .

Specifically, the first to-be-connected members or the second to-be-connected members are formed of ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or the like used for a liquid crystal display A printed wiring board, a ceramic wiring board, a flexible wiring board, a semiconductor silicon chip, an IC chip, or a driver IC chip on which electrodes of the first to-be-connected members and the electrodes to be connected are formed. More specifically, May be an IC chip or a driver IC chip, and the other may be a glass substrate.

1, the display device 30 includes a first connected member 50 including a first electrode 70 and a second connected member 60 including a second electrode 80. [ Through the anisotropic conductive film (10) comprising the conductive particles (3) described herein, which is located between the first connected member and the second connected member and connects the first electrode and the second electrode They can be bonded to each other.

Hereinafter, the configuration and operation of the present invention will be described in more detail with reference to preferred embodiments of the present invention. It is to be understood, however, that the same is by way of illustration and example only and is not to be construed in a limiting sense.

The contents not described here are sufficiently technically inferior to those skilled in the art, and a description thereof will be omitted.

Example

Example  1: Preparation of anisotropic conductive film

35% by weight of an alicyclic epoxy resin (celloxide 2021P, Daicel) having an epoxy equivalent of 130 g / eq, 35% by weight of a biphenyl fluorene type binder resin (FX-293, (SI-B3A, available from Sanxin Chemical Co., Ltd., Japan) in an amount of 5% by weight based on the total weight of the composition of the present invention, 5% by weight of hexane (TX-100, TOAGOSEI) , 20 wt% of conductive particles (AUL-704F, average particle diameter 4 탆, SEKISUI, Japan) were insulated and mixed to prepare a composition for anisotropic conductive film.

[Formula 1-1]

The composition for anisotropically conductive films was coated on a release film, and the solvent was volatilized in a 60 dryer for 5 minutes to obtain a dried anisotropic conductive film (Tg: 195 DEG C) having a thickness of 16 mu m.

Example  2: Preparation of anisotropic conductive film

The same procedures as in Example 1 were carried out except that the content of silsesquioxane containing an epoxy resin and an oxetane group and the compound of the formula 1-1 was changed as shown in Table 1, Of an anisotropic conductive film (Tg: 198 DEG C).

Example  3

An anisotropic conductive film (Tg: 195 ° C) of Example 3 was prepared in the same manner as in Example 1, except that YX4000 (Mitsubishi Chemical, Japan) was used as the epoxy resin in Example 1.

Comparative Example  One

The anisotropic conductive film (Tg (a)) of Comparative Example 1 was obtained in the same manner as in Example 1, except that the compound of Formula 1-1 was not used and the content of the epoxy resin was changed to 36 wt% : 196 < 0 > C).

Comparative Example  2

The anisotropic conductivity of Comparative Example 2 was measured under the same conditions and in the same manner as in Example 1, except that Methylenebis (Anline) (Kido Chemical Co., MDA-220) was used instead of the compound of Formula 1-1 as the stabilizer in Example 1 Film (Tg: 165 캜).

Comparative Example  3

Comparative Example 3 was prepared in the same manner as in Example 1 except that the content of the silsesquioxane containing epoxy resin and oxetane group and the compound of Formula 1-1 was changed as shown in Table 1 below, Of an anisotropic conductive film (Tg: 205 DEG C).

Comparative Example  4

The procedure of Example 1 was repeated except that silsesquioxane containing oxetane group and the compound of Formula 1-1 were not included and 5.05 wt% of nano silica R812 (particle size 7 nm, Tokuyama corporation) , An anisotropic conductive film of Comparative Example 4 (Tg: 168 ° C) was prepared.

The contents and specifications of each component used in the above Examples and Comparative Examples are shown in Table 1 below. The following amounts are all expressed by weight%.

Raw material Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Binder resin 35 35 35 35 35 35 35 Epoxy resin 35.95 30.9 - 36 35.95 25.85 35.95 - - 35.95 - - - Oxetane group-containing silsesquioxane 5 10 5 5 5 15 - Stabilizer 0.05 0.1 0.05 - - 0.15 - - - - - 0.05 - Hardener 4 4 4 4 4 4 4 Conductive particle 20 20 20 20 20 20 20 Nano silica - - - - - - 5.05 Sum 100 100 100 100 100 100 100

The anisotropic conductive films of Examples 1 to 3 and Comparative Examples 1 to 4 were evaluated for heat generation initiation temperature and exothermic peak temperature on a thermal differential scanning calorimeter (DSC), minimum melt viscosity, particle capture rate, connection Resistance and indentation uniformity after bonding were measured and the results are shown in Table 2 below.

Experimental Example  One: Thermal differential scanning calorimeter ( DSC ) Phase start temperature and exothermic peak temperature measurement

With respect to the anisotropic conductive films produced in the Examples and Comparative Examples, the calorific value was measured at a rate of 10 ° C / min under a nitrogen gas atmosphere using a DSC (TA Instruments Q20) at a temperature in the range of -50 ° C to 250 ° C And the results are shown in Fig. On the DSC graph, the tangential line was tangent to the line at which the tilt increased at the highest peak, and the temperature at the point where the tangent line reached the extension line connecting the start point of the DSC graph and the end point of the endothermic curve was measured as the onset temperature of DSC. In addition, the temperature at which the peak value of the heating value is shown in the DSC graph was measured as the peak value of the heating temperature on the DSC.

Experimental Example  2: lowest Melt viscosity  Measure

With respect to the anisotropic conductive films prepared in the above Examples and Comparative Examples, the samples were laminated with ARES G2 rheometer (TA Instruments) so as to have a thickness of 150 탆 and heated at a rate of 10 캜 / min, a strain of 1% and an angular frequency of 1 rad / sec, the lowest melt viscosity was measured in the range of 30 ° C to 220 ° C.

Experimental Example  3: Particle capture rate  Measure

The number of conductive particles per unit area (mm ² ) of the anisotropic conductive film produced in the Examples and Comparative Examples before compression was calculated using a particle automatic meter (ZOOTUS).

Further, an anisotropic conductive film was placed on a glass substrate (Neoview Kolon) having an indium tin oxide circuit having a bump area of 1200 占 퐉 ² and a thickness of 2000 占 and pressed at 70 MPa for 1 second at 1 MPa, An IC chip having an area of 1200 μm ² and a thickness of 1.5 T (manufactured by SAMSUNG LSI) was placed on the substrate, and the resultant was compression bonded at 130 to 5 seconds under a pressure of 70 MPa. The number of conductive particles per unit area (mm ² ) And the particle capture rate was calculated by the following formula (1).

[Formula 1]

(Mm ² ) number of conductive particles per unit area (mm ² ) of anisotropically conductive film before compression bonding (%) = (number of conductive particles per unit area (mm ² )

Experimental Example  4: Measurement of connection resistance after initial and reliability evaluation

The anisotropic conductive films prepared in the above Examples and Comparative Examples were placed on a glass substrate (Neoview Kolon) having an indium tin oxide circuit having a bump area of 1200 占 퐉 ² and a thickness of 2000 占 and pressed at 70 MPa for 1 second at 1 MPa , The release film was removed and an IC chip (Samsung LSI) having a bump area of 1200 μm ² and a thickness of 1.5T was placed thereon. The IC chips were then compression-bonded at 130 to 5 seconds under a pressure of 70 MPa to prepare a test piece. The resistance between the four points was measured using a resistance measuring instrument (2000 Multimeter, Keithley) and expressed as an initial connection resistance. Thereafter, the sample was left for 250 hours at a temperature of 85 ° C and a relative humidity of 85%, and the resistance was measured in the same manner.

The resistance measuring instrument is applied with 1 mA, and the resistance is calculated by the measured voltage and averaged.

Experimental Example  5: Bonding  after Indentation  Uniformity

The anisotropically conductive films prepared in the above Examples and Comparative Examples were placed on a glass substrate (Neoview Kolon) having an indium tin oxide circuit with a bump area of 1200 탆 ² and a thickness of 2000 Å, and each was pressed at 70 MPa for 1 second at 1 MPa , An IC chip (manufactured by Samsung LSI) having a bump area of 1200 탆 ² and a thickness of 1.5T was placed on the substrate, and the resultant was compression-bonded at 130 to 5 seconds and 70 MPa, and uniformity of the indentation was visually observed Respectively. Specifically, when the indentations on both side portions of the IC chip are clear to the same extent as the indentations on the central portion, it is determined that the indentation is uniform, so that indentations on both side portions of the IC chip are blurry or unclear (X).

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Glass transition temperature
(° C) 195 198 195 196 165 205 168 Starting temperature of DSC on heating (℃) 96.91 92.56 90.03 76.23 86.25 90.53 95.36 Exothermic peak temperature on DSC (℃) 105.58 102.15 99.93 102.36 115.36 99.56 112.73 Difference between exothermic peak temperature on DSC and exothermic onset temperature
(° C) 8.67 9.59 9.90 26.13 29.11 9.03 17.37 The lowest melt viscosity (Pa · s) 103,650 136,580 98,563 106,530 14,625 205,354 302,538 Particle capture rate (%) 35 42 42 35 15 58 26 Initial connection resistance
(Ω) 0.04 0.05 0.05 0.04 0.04 0.12 0.08 Connection resistance (Ω) after reliability evaluation 0.18 0.12 0.10 0.18 0.53 0.62 0.82 Indentation uniformity ○ ○ ○ × × × ×

As shown in Table 2, Examples 1 to 3, which contained 1 to 14% by weight of silsesquioxane-containing silsesquioxane compound and included the stabilizer of Formula 1, It was found that the peak temperature difference was small and the low temperature fast curing was achieved, the particle capture rate was excellent, indentation uniformity, initial and reliability connection resistance were also excellent. On the other hand, the anisotropic conductive film of Comparative Example 1 or Comparative Example 2, which contains no stabilizer or other stabilizer than the compound of Formula 1, exhibits a large difference between the exothermic onset temperature and the exothermic peak temperature on DSC, And indentation uniformity was deteriorated. In Comparative Example 3 containing 15% by weight of the silsesquioxane compound containing an oxetane group, although the particle capture rate was good, indentation uniformity and initial reliability connection resistance properties were greatly degraded.

Claims (20)

Based on the total solid weight of the composition for anisotropic conductive film,
1 to 14% by weight of a silsesquioxane compound containing oxetane groups,
0.01 to 10% by weight of a compound of the formula (1)
20 to 70% by weight of a binder resin,
20 to 50% by weight of an epoxy resin,
1 to 30% by weight of conductive particles, and
And 1 to 10% by weight of a curing agent,
[Chemical Formula 1]

(Wherein R ₁ represents hydrogen, a C _1-6 alkyl group, a C _6-14 aryl group, a -C _1-6 alkyl C _6-14 aryl group, -C ( _═O ) R ₈ , -C (= O) OR ₉ , and -C (= O) NHR ₁₀ , wherein R ₈ , R ₉ and R ₁₀ are each independently selected from a C _1-6 alkyl group and a C _6-14 aryl group );
R ₂ to R ₅ are each hydrogen or a C _1-6 alkyl group;
R ₆ and R ₇ are each independently selected from the group consisting of a C _1-6 alkyl group, a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group substituted or unsubstituted with C _1-6 alkyl, and a naphthylmethyl group, Wherein X < ₁ > is alkyl sulfate,
Wherein the oxetane group-containing silsesquioxane compound comprises a structure represented by the following formula (2): < EMI ID =
(2)

(Wherein R ₁₁ is an oxetane group and R ₁₂ is hydrogen, a substituted or unsubstituted alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group, an alkylaryl group, a heteroalkyl group, a heterocycloalkyl group, Lt; / RTI >
X and y are in the range of 0 < x < 1.0, 0 y < 1.0 and x + y = 1). delete The composition for an anisotropic conductive film according to claim 1, wherein x is in the range of 0.5? X? 1.0. 2. The compound according to claim 1, wherein R ₁ is hydrogen, a C ₁ to C ₄ alkyl or acetyl group, R ₂ to R ₅ are each hydrogen or a C ₁ to C ₄ alkyl group, R ₆ and R ₇ Is a methyl group or a benzyl group. delete The composition for anisotropic conductive films according to claim 1, wherein the binder resin is a fluorene-based phenoxy resin. The epoxy resin composition according to claim 1, wherein the epoxy resin is selected from the group consisting of a bisphenol epoxy resin, an aromatic epoxy resin, an alicyclic epoxy resin, a novolac epoxy resin, a glycidylamine epoxy resin, a glycidyl ester- A cyydyl ether epoxy resin, a hydrogenated epoxy resin, or a combination thereof. The composition for anisotropic conductive films according to claim 7, wherein the alicyclic epoxy resin has a structure represented by any one of the following formulas (10) to (13).
[Chemical formula 10]

(11)

[Chemical Formula 12]

[Chemical Formula 13]

In the above formulas 11 to 13, n, s, t, u, v, m and f are each independently an integer of 1 to 50, and R is an alkyl group, an acetyl group, an alkoxy group or a carbonyl group. The composition for an anisotropic conductive film according to claim 1, wherein the curing agent is any one selected from the group consisting of acid anhydride, amine, imidazole, isocyanate, amide, hydrazide, phenol and cation. The composition for an anisotropic conductive film according to claim 9, wherein the cationic curing agent has a structure represented by the following general formula (14), (15) or (16)
[Chemical Formula 14]

[Chemical Formula 15]

[Chemical Formula 16]

Wherein R ₁₃ is selected from the group consisting of hydrogen, a C _1-6 alkyl group, a C _6-14 aryl group, a -C _1-6 alkyl C _6-14 aryl group, -C ( _═O ) R ₂₅ , -C ) 0R ₂₆ , and -C (= O) NHR ₂₇ , wherein R ₂₅ , R ₂₆ and R ₂₇ are each independently selected from a C _1-6 alkyl group and a C _6-14 aryl group, ;
R ₁₄ to R ₁₇ are each independently hydrogen or a C _1-6 alkyl group;
R ₁₈ and R ₁₉ are each selected from the group consisting of a C _1-6 alkyl group, a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group substituted or unsubstituted with a C _1-6 alkyl group, and a naphthylmethyl group, Y ₁ ^- is AsF ₆ , SbF ₆ , SbCl ₆ , (C ₆ F ₅ ) ₄ B, SbF ₅ (OH), PF ₆ or BF ₄ .
Further, in formula 15, R ₂₀ is hydrogen, R ₂₁ is a C _1-6 alkyl group, R ₂₂ is -OH, -OC (= O) R 25 or -OC (= O) OR ₂₆ (wherein, R _25, and And R ₂₆ is each a C _1-6 alkyl group) and Y ₂ ^- is AsF ₆ , SbF ₆ , SbCl ₆ , (C ₆ F ₅ ) ₄ B, SbF ₅ (OH), PF ₆ or BF ₄ .
In Formula 16, R ₂₃ and R ₂₄ each independently represent a C _1-20 alkyl group, a C _3-12 alkenyl group, a C _6-20 aryl group, a C _7-20 alkaryl group, a C _7-20 alkylaryl group, A C _1-20 alkanol group and a C _5-20 cycloalkyl group, Ar ₁ is a substituted or unsubstituted C _6-20 aryl group, Ar ₂ is a substituted or unsubstituted C _6-20 arylene group And Y ₃ ^- is BF ₄ , PF ₆ , AsF ₆ , SbF ₆ , SbCl ₆ , (C ₆ F ₅ ) ₄ B, SbF ₅ (OH), HSO ₄ , p-CH ₃ C ₆ H ₄ SO ₃ , HCO ₃ , H ₂ PO ₄ , CH ₃ COO and a halogen anion. delete 1 to 14% by weight of a silsesquioxane compound containing oxetane groups,
0.01 to 10% by weight of a compound of the formula (1)
20 to 70% by weight of a binder resin,
20 to 50% by weight of an epoxy resin,
1 to 30% by weight of conductive particles, and
And an anisotropic conductive film containing 1 to 10% by weight of a curing agent,
[Chemical Formula 1]

(Wherein R ₁ represents hydrogen, a C _1-6 alkyl group, a C _6-14 aryl group, a -C _1-6 alkyl C _6-14 aryl group, -C ( _═O ) R ₈ , -C (= O) OR ₉ , and -C (= O) NHR ₁₀ , wherein R ₈ , R ₉ and R ₁₀ are each independently selected from a C _1-6 alkyl group and a C _6-14 aryl group );
R ₂ to R ₅ are each hydrogen or a C _1-6 alkyl group;
R ₆ and R ₇ are each independently selected from the group consisting of a C _1-6 alkyl group, a nitrobenzyl group, a dinitrobenzyl group, a trinitrobenzyl group, a benzyl group substituted or unsubstituted with C _1-6 alkyl, and a naphthylmethyl group, Wherein X < ₁ > is alkyl sulfate,
Wherein the oxetane group-containing silsesquioxane compound has a structure represented by the following formula (2)
(2)

(Wherein R ₁₁ is an oxetane group and R ₁₂ is hydrogen, a substituted or unsubstituted alkyl group, a cycloalkyl group, an aryl group, an arylalkyl group, an alkylaryl group, a heteroalkyl group, a heterocycloalkyl group, Lt; / RTI >
X and y are in the range of 0 < x < 1.0, 0 y < 1.0 and x + y = 1).
Wherein the anisotropic conductive film has an anisotropic conductive film having a difference between an exothermic peak temperature on the DSC and an exothermic onset temperature of 10 ° C or less and a minimum melt viscosity at 80 ° C to 100 ° C of 10,000 to 200,000 Pa · sec, . delete delete The anisotropic conductive film according to claim 12, wherein the curing agent is any one selected from the group consisting of acid anhydride, amine, imidazole, isocyanate, amide, hydrazide, phenol and cation. The anisotropic conductive film according to claim 12, wherein the anisotropic conductive film has a glass transition temperature (Tg) of 180 ° C to 250 ° C. The anisotropic conductive film according to claim 12, wherein the particle-trapping ratio according to the formula (1) is 30% to 70%, measured after the main compression at 100 to 150 ° C for 4 to 7 seconds and 50 to 90 MPa.
[Formula 1]
(Mm ² ) number of conductive particles per unit area (mm ² ) of anisotropically conductive film before compression bonding (%) = (number of conductive particles per unit area (mm ² ) The anisotropically conductive film according to claim 12, wherein the anisotropic conductive film is subjected to compression bonding at 100 to 150 DEG C for 4 to 7 seconds and 50 to 90 MPa and is left for 250 hours under the conditions of a temperature of 85 DEG C and a relative humidity of 85% And the connection resistance after the evaluation is 0.5 Ω or less. The anisotropic conductive film according to claim 12, wherein the anisotropic conductive film is used in a COG (chip on glass) or COF (chip on film) mounting method. A first connected member containing a first electrode;
A second connected member containing a second electrode; And
And connecting the first electrode and the second electrode, the first electrode being located between the first member to be connected and the second member to be connected, An anisotropic conductive film produced from a composition for an anisotropic conductive film according to any one of claims 12 to 19 or a display device connected by an anisotropic conductive film according to any one of claims 12 to 19.

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