TWI655501B - Negative photosensitive resin composition, partition and optical component - Google Patents

Negative photosensitive resin composition, partition and optical component Download PDF

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TWI655501B
TWI655501B TW104113066A TW104113066A TWI655501B TW I655501 B TWI655501 B TW I655501B TW 104113066 A TW104113066 A TW 104113066A TW 104113066 A TW104113066 A TW 104113066A TW I655501 B TWI655501 B TW I655501B
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photosensitive resin
resin composition
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partition wall
negative photosensitive
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TW201546546A (en
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川島正行
古川豊
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日商Agc股份有限公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G02OPTICS
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    • G02B5/00Optical elements other than lenses
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    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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Abstract

提供一種可使用於製造隔壁之負型感光性樹脂組成物,該隔壁可在低曝光量下於上表面形成具有充分撥墨性之撥墨層,且即便經親墨化處理仍可保持優異的撥墨性;並且,提供一種光學元件之隔壁,其於上表面具有撥墨層,可形成微細且高精度的圖案,即便經親墨化處理仍可保持優異的撥墨性;以及,提供一種光學元件,其具有點,該點係於前述隔壁所劃分之開口部均勻塗佈印墨而精確形成。 Provided is a negative-type photosensitive resin composition that can be used for manufacturing a partition wall. The partition wall can form an ink repellent layer having sufficient ink repellency on an upper surface at a low exposure amount, and can maintain an excellent Ink repellency; and a partition wall of an optical element, which has an ink repellent layer on the upper surface, can form a fine and high-precision pattern, and can maintain excellent ink repellency even after being ink-friendly; and, The optical element has dots, and the dots are precisely formed by uniformly applying printing ink to the opening portion divided by the partition wall.

一種負型感光性樹脂組成物,含有鹼可溶性樹脂、交聯劑、光酸產生劑、以及含有水解性矽烷化合物之撥墨劑,該水解性矽烷化合物具有氟伸烷基及/或氟烷基與水解性基;一種使用該負型感光性樹脂組成物形成之硬化膜及隔壁;及一種光學元件,係於基板表面具有多數個點及位於相鄰之點之間的前述隔壁。 A negative photosensitive resin composition containing an alkali-soluble resin, a cross-linking agent, a photoacid generator, and an ink repellent containing a hydrolyzable silane compound, the hydrolyzable silane compound having a fluoroalkylene group and / or a fluoroalkyl group And a hydrolyzable group; a hardened film and a partition wall formed using the negative photosensitive resin composition; and an optical element having the plurality of points on the surface of the substrate and the aforementioned partition wall located between adjacent points.

Description

負型感光性樹脂組成物、隔壁及光學元件 Negative photosensitive resin composition, partition wall and optical element 發明領域 Field of invention

本發明係有關於一種負型感光性樹脂組成物、隔壁及光學元件。 The present invention relates to a negative photosensitive resin composition, a partition wall, and an optical element.

發明背景 Background of the invention

在有機EL(Electro-Luminescence:電致發光)元件、量子點顯示器、TFT(Thin Film Transistor:薄膜電晶體)陣列、薄膜太陽電池等光學元件之製造上,有使用將發光層等有機層以點狀藉由噴墨(IJ)法進行圖案印刷之方法。在該方法中,係沿著欲形成之點的輪廓設置隔壁,並將含有有機層材料的印墨注入該隔壁所圍成之分區(以下亦稱「開口部」)內,使其乾燥及/或加熱等而形成期望圖案之點。 In the production of organic EL (Electro-Luminescence) elements, quantum dot displays, thin film transistors (TFTs) arrays, and thin-film solar cells, optical elements such as light-emitting layers A method of pattern printing by an inkjet (IJ) method. In this method, a partition wall is provided along the outline of the point to be formed, and a printing ink containing an organic layer material is injected into a partition area (hereinafter also referred to as an "opening portion") surrounded by the partition wall to dry and / Or heating to form a desired pattern.

在上述方法中,為了防止相鄰點間之印墨混合及點形成時印墨能均勻塗佈,隔壁上表面必須具有撥墨性,而包含隔壁側面在內之隔壁所圍成的點形成用開口部則必須具有親墨性。 In the above method, in order to prevent the ink mixing between adjacent dots and the ink to be evenly applied during dot formation, the upper surface of the partition must have ink repellency, and the dot formation surrounded by the partition including the side of the partition is used for the formation of dots. The opening must be ink-friendly.

爰此,為了獲得上表面具有撥墨性之隔壁,周知有一種使用含有撥墨劑之感光性樹脂組成物藉由光刻法形 成與點圖案相對應之隔壁的方法。就感光性樹脂大致分類可使用自由基聚合型感光性樹脂及陽離子聚合型感光性樹脂。然而,周知在自由基聚合型感光性樹脂組成物中,最表面之硬化會受氧阻礙。所以,為了使用含有撥墨劑之感光性樹脂組成物使最表面顯現充分的撥墨性,需要較多的曝光量,結果便會影響到感度、圖案化形狀及殘渣等。 Therefore, in order to obtain a partition wall having an ink repellent property on the upper surface, it is known to use a photosensitive resin composition containing an ink repellent agent to shape it by photolithography. A method of forming a wall next to a dot pattern. The photosensitive resin is roughly classified into a radical polymerization type photosensitive resin and a cation polymerization type photosensitive resin. However, it is known that in the radical polymerization type photosensitive resin composition, the hardening of the outermost surface is hindered by oxygen. Therefore, in order to use the photosensitive resin composition containing an ink repellent agent to make sufficient ink repellency on the outermost surface, a large amount of exposure is required, and as a result, sensitivity, patterned shape, and residues are affected.

另一方面,使用陽離子聚合型感光性樹脂時,則不易受到如上述有關表面硬化的氧阻礙之影響,可在少量的曝光量下對表面賦予撥墨性。像這樣將陽離子聚合型感光性樹脂與撥墨劑組合而成之組成物,專利文獻1中記載了一種使撥液劑與陽離子聚合型感光性樹脂組合而成之組成物,該撥液劑係由具有碳原子數4~6之氟烷基且含有源自不飽和化合物之結構單元的加成聚合物所構成。 On the other hand, when a cationically polymerizable photosensitive resin is used, it is less susceptible to the influence of oxygen on surface hardening as described above, and can impart ink repellency to the surface with a small amount of exposure. In this way, a composition obtained by combining a cationically polymerizable photosensitive resin and an ink repellent is described in Patent Document 1, which is a composition obtained by combining a liquid repellent with a cationically polymerizable photosensitive resin. It is composed of an addition polymer having a fluoroalkyl group having 4 to 6 carbon atoms and containing a structural unit derived from an unsaturated compound.

先前技術文獻 Prior art literature 專利文獻 Patent literature

專利文獻1:國際公開第2012/057058號 Patent Document 1: International Publication No. 2012/057058

發明概要 Summary of invention

專利文獻1中記載之撥液劑於隔壁形成時可在少量的曝光量下固定於隔壁表面,但是,對於隔壁形成後為去除殘留在點中之不純物等所進行之例如利用鹼水溶液之洗淨處理、紫外線洗淨處理、紫外線/臭氧洗淨處理、準分子洗淨處理、電暈放電處理、氧電漿處理等親墨化處理的 耐性則不夠充分。 The liquid-repellent agent described in Patent Document 1 can be fixed to the surface of the partition wall with a small amount of exposure when the partition wall is formed. However, after the partition wall is formed to remove impurities remaining in the spots, for example, washing with an alkaline aqueous solution Treatment, UV cleaning treatment, UV / ozone cleaning treatment, excimer cleaning treatment, corona discharge treatment, oxygen plasma treatment, etc. Patience is not enough.

本發明正是從上述觀點產生者,其課題在於提供一種可使用於製造隔壁的負型感光性樹脂組成物,該負型感光性樹脂組成物可在低曝光量下於隔壁上表面形成具有充分撥墨性之撥墨層,且該撥墨層即便經親墨化處理仍可保持優異的撥墨性。 The present invention has been made from the foregoing viewpoint, and an object thereof is to provide a negative photosensitive resin composition which can be used for manufacturing a partition wall, and the negative photosensitive resin composition can be formed on the upper surface of the partition wall with a low exposure amount and has sufficient Ink-repellent ink-repellent layer, and the ink-repellent layer can maintain excellent ink-repellency even after ink-repellent treatment.

本發明課題並在於提供一種光學元件之隔壁,該隔壁於上表面具有一具充分撥墨性的撥墨層,可形成微細且精度高的圖案,即便經親墨化處理仍可保持優異的撥墨性。 The problem of the present invention is also to provide a partition wall of an optical element. The partition wall has an ink repellent layer with sufficient ink repellency on the upper surface, which can form a fine and high-precision pattern, and can maintain excellent repellency even after being ink-friendly. Ink.

又,本發明目的在於提供一種光學元件,其具有點,該點係於隔壁所劃分之開口部中均勻塗佈印墨而精確形成,具體來說,光學元件為有機EL元件、量子點顯示器、TFT陣列或薄膜太陽電池。 Another object of the present invention is to provide an optical element having dots, which are accurately formed by uniformly coating printing ink in an opening portion divided by a partition wall. Specifically, the optical element is an organic EL element, a quantum dot display, TFT array or thin film solar cell.

本發明提供一種具有以下[1]~[15]之構成的負型感光性樹脂組成物、隔壁及光學元件。 The present invention provides a negative-type photosensitive resin composition having the following structures [1] to [15], a partition wall, and an optical element.

[1]一種負型感光性樹脂組成物,含有鹼可溶性樹脂(A)、交聯劑(B)、光酸產生劑(C)及撥墨劑(D),該撥墨劑(D)含有水解性矽烷化合物(s1)作為單體及/或部分水解(共)縮合物,且該水解性矽烷化合物(s1)具有氟伸烷基及/或氟烷基與水解性基。 [1] A negative photosensitive resin composition containing an alkali-soluble resin (A), a crosslinking agent (B), a photoacid generator (C), and an ink repellent (D), the ink repellent (D) containing The hydrolyzable silane compound (s1) is a monomer and / or a partially hydrolyzed (co) condensate, and the hydrolyzable silane compound (s1) has a fluoroalkylene group and / or a fluoroalkyl group and a hydrolyzable group.

[2]如上述[1]記載之負型感光性樹脂組成物,其中前述撥墨劑(D)中之氟原子含有率為1~40質量%。 [2] The negative photosensitive resin composition according to the above [1], wherein the fluorine atom content rate in the ink repellent (D) is 1 to 40% by mass.

[3]如上述[1]或[2]記載之負型感光性樹脂組成物,其中 前述撥墨劑(D)含有水解性矽烷化合物(s2)作為單體及/或部分水解(共)縮合物,且該水解性矽烷化合物(s2)於矽原子鍵結有4個水解性基。 [3] The negative photosensitive resin composition according to the above [1] or [2], wherein The ink repellent (D) contains a hydrolyzable silane compound (s2) as a monomer and / or a partially hydrolyzed (co) condensate, and the hydrolyzable silane compound (s2) has four hydrolyzable groups bonded to a silicon atom.

[4]如上述[1]~[3]中任一項記載之負型感光性樹脂組成物,其中前述撥墨劑(D)含有水解性矽烷化合物(s3)作為單體及/或部分水解(共)縮合物,且該水解性矽烷化合物(s3)僅具有烴基及水解性基。 [4] The negative photosensitive resin composition according to any one of the above [1] to [3], wherein the ink repellent (D) contains a hydrolyzable silane compound (s3) as a monomer and / or is partially hydrolyzed (Co) condensate, and the hydrolyzable silane compound (s3) has only a hydrocarbon group and a hydrolyzable group.

[5]如上述[1]~[4]中任一項記載之負型感光性樹脂組成物,其中前述撥墨劑(D)含有水解性矽烷化合物(s4)作為單體及/或部分水解(共)縮合物,該水解性矽烷化合物(s4)具有陽離子聚合性基及水解性基且不含氟原子。 [5] The negative photosensitive resin composition according to any one of the above [1] to [4], wherein the ink repellent (D) contains a hydrolyzable silane compound (s4) as a monomer and / or is partially hydrolyzed (Co) condensate, the hydrolyzable silane compound (s4) has a cationically polymerizable group and a hydrolyzable group and does not contain a fluorine atom.

[6]如上述[1]~[5]中任一項記載之負型感光性樹脂組成物,其中前述鹼可溶性樹脂(A)之含量在負型感光性樹脂組成物之總固體成分中佔10~90質量%。 [6] The negative photosensitive resin composition according to any one of the above [1] to [5], wherein the content of the alkali-soluble resin (A) accounts for the total solid content of the negative photosensitive resin composition 10 to 90% by mass.

[7]如上述[1]~[6]中任一項記載之負型感光性樹脂組成物,其中相對於100質量份之鹼可溶性樹脂(A),前述交聯劑(B)及光酸產生劑之含量分別為2~50質量份及0.1~20質量份。 [7] The negative photosensitive resin composition according to any one of the above [1] to [6], wherein the crosslinking agent (B) and the photoacid are relative to 100 parts by mass of the alkali-soluble resin (A) The content of the generator is 2 to 50 parts by mass and 0.1 to 20 parts by mass.

[8]如上述[1]~[7]中任一項記載之負型感光性樹脂組成物,其中相對於100質量份之鹼可溶性樹脂(A),前述撥墨劑(D)之含量為0.01~20質量份。 [8] The negative photosensitive resin composition according to any one of the above [1] to [7], wherein the content of the ink repellent (D) is 100 parts by mass of the alkali-soluble resin (A) 0.01 to 20 parts by mass.

[9]如上述[1]~[8]中任一項記載之負型感光性樹脂組成物,其更含有溶劑(E),該溶劑(E)係選自於由丙二醇單甲基醚乙酸酯、丙二醇單甲基醚、二乙二醇乙基甲基醚、二 乙二醇單乙基醚乙酸酯及2-丙醇所構成群組中之至少1種。 [9] The negative photosensitive resin composition according to any one of the above [1] to [8], further comprising a solvent (E) selected from propylene glycol monomethyl ether ethyl Acid esters, propylene glycol monomethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol At least one of the group consisting of ethylene glycol monoethyl ether acetate and 2-propanol.

[10]如上述[1]~[9]中任一項記載之負型感光性樹脂組成物,其中相對於負型感光性樹脂組成物總量,前述溶劑(E)之含量為50~99質量%。 [10] The negative photosensitive resin composition according to any one of the above [1] to [9], wherein the content of the solvent (E) is 50 to 99 relative to the total amount of the negative photosensitive resin composition. quality%.

[11]一種隔壁,係形成為將基板表面劃分成多數個點形成用分區之形狀,且該隔壁係由如上述[1]~[10]中任一項記載之負型感光性樹脂組成物之硬化膜所構成。 [11] A partition wall formed into a shape that divides the substrate surface into a plurality of dot-forming partitions, and the partition wall is made of the negative photosensitive resin composition as described in any one of [1] to [10] above. Made of hardened film.

[12]如上述[11]記載之隔壁,其寬為100μm以下,隔壁間之距離(圖案寬度)為300μm以下,高度為0.05~50μm。 [12] The partition wall according to the above [11], which has a width of 100 μm or less, a distance (pattern width) between the partitions of 300 μm or less, and a height of 0.05 to 50 μm.

[13]一種光學元件,係於基板表面具有多數個點及位於相鄰之點之間的隔壁,其特徵在於:前述隔壁係以如上述[11]或[12]記載之隔壁來形成。 [13] An optical element having a plurality of points on a surface of a substrate and a partition wall between adjacent points, wherein the partition wall is formed by the partition wall as described in [11] or [12] above.

[14]如上述[13]記載之光學元件,其中前述點係以噴墨法形成。 [14] The optical element according to the above [13], wherein the dots are formed by an inkjet method.

[15]如上述[13]或[14]記載之光學元件,其中前述光學元件為有機EL元件、量子點顯示器、TFT陣列或薄膜太陽電池。 [15] The optical element according to the above [13] or [14], wherein the optical element is an organic EL element, a quantum dot display, a TFT array, or a thin-film solar cell.

藉由使用本發明之負型感光性樹脂組成物,可製造具有下述特性之隔壁:可在低曝光量下於隔壁上表面形成具有充分撥墨性的撥墨層,且該撥墨層即便經親墨化處理仍可保持優異的撥墨性。 By using the negative photosensitive resin composition of the present invention, a partition having the following characteristics can be produced: an ink repellent layer having sufficient ink repellency can be formed on the upper surface of the partition at a low exposure amount, and After ink-repellent treatment, excellent ink repellency can be maintained.

又,本發明之隔壁於上表面具有一具充分撥墨性的撥墨層,可形成微細且精度高的圖案,所以可提供一種使用 光學元件構成之有機EL元件、量子點顯示器、TFT陣列或薄膜太陽電池,該光學元件具有點,且該點係於該隔壁所劃分之開口部均勻塗佈印墨而精確形成。 In addition, the partition wall of the present invention has an ink repellent layer with sufficient ink repellency on the upper surface, which can form a fine and highly accurate pattern, so it can provide a use An organic EL element, a quantum dot display, a TFT array, or a thin-film solar cell composed of optical elements. The optical element has dots, and the dots are accurately formed by uniformly coating ink on the opening portion divided by the partition wall.

1‧‧‧基板 1‧‧‧ substrate

4‧‧‧隔壁 4‧‧‧ next door

4A‧‧‧撥墨層 4A‧‧‧Ink layer

4B‧‧‧下部層 4B‧‧‧ Lower floor

5‧‧‧開口部 5‧‧‧ opening

9‧‧‧噴墨頭 9‧‧‧ inkjet head

10‧‧‧印墨 10‧‧‧Ink

11‧‧‧點 11 o'clock

12‧‧‧有機EL元件 12‧‧‧Organic EL element

21‧‧‧塗膜 21‧‧‧coating film

22‧‧‧乾燥膜 22‧‧‧ dry film

23‧‧‧曝光膜 23‧‧‧ exposure film

23A‧‧‧曝光部 23A‧‧‧Exposure Department

23B‧‧‧非曝光部 23B‧‧‧Unexposed

30‧‧‧光罩 30‧‧‧Mask

31‧‧‧遮罩部 31‧‧‧Mask

(D)‧‧‧撥墨劑 (D) ‧‧‧ Ink Repellent

圖1A係示意顯示本發明之實施形態之隔壁製造方法的步驟圖。 FIG. 1A is a step diagram schematically showing a method for manufacturing a partition wall according to an embodiment of the present invention.

圖1B係示意顯示本發明之實施形態之隔壁製造方法的步驟圖。 FIG. 1B is a schematic view showing a step of the method for manufacturing a partition wall according to the embodiment of the present invention.

圖1C係示意顯示本發明之實施形態之隔壁製造方法的步驟圖。 FIG. 1C is a step diagram schematically showing a method for manufacturing a partition wall according to an embodiment of the present invention.

圖1D係示意顯示本發明之實施形態之隔壁製造方法的步驟圖。 FIG. 1D is a step diagram schematically showing a method for manufacturing a partition wall according to an embodiment of the present invention.

圖2A係示意顯示本發明之實施形態之光學元件製造方法的步驟圖。 FIG. 2A is a step diagram schematically showing a method of manufacturing an optical element according to an embodiment of the present invention.

圖2B係示意顯示本發明之實施形態之光學元件製造方法的步驟圖。 FIG. 2B is a flowchart schematically showing a method of manufacturing an optical element according to an embodiment of the present invention.

用以實施發明之形態 Forms used to implement the invention

本說明書中用語之定義彙整說明如下。 The definitions of terms used in this manual are summarized as follows.

「(甲基)丙烯醯基」係「甲基丙烯醯基」及「丙烯醯基」之總稱。(甲基)丙烯醯氧基、(甲基)丙烯酸、(甲基)丙烯酸酯、(甲基)丙烯醯胺及(甲基)丙烯酸樹脂亦據此解釋。 "(Meth) acrylfluorenyl" is a general term for "methacrylfluorenyl" and "acrylfluorenyl". (Meth) acrylic acid, (meth) acrylic acid, (meth) acrylate, (meth) acrylamide, and (meth) acrylic resin are also explained accordingly.

式(x)所示之基有時會僅記載為基(x)。 The base represented by the formula (x) may be described only as the base (x).

式(y)所示之化合物有時會僅記載為化合物(y)。 The compound represented by the formula (y) may be described only as the compound (y).

在此,式(x)及式(y)表示任意式。 Here, expressions (x) and (y) represent arbitrary expressions.

「側鏈」係在由碳原子所構成之重複單元構成主鏈的聚合物中,鍵結於構成主鏈之碳原子的氫原子或鹵素原子以外之基。含氟原子單元等之「單元」則表示聚合單元。 A "side chain" refers to a group other than a hydrogen atom or a halogen atom of a carbon atom constituting a main chain in a polymer constituting a main chain of repeating units composed of carbon atoms. "Unit" such as a fluorine atom-containing unit means a polymerized unit.

「感光性樹脂組成物之總固體成分」係指感光性樹脂組成物所含成分中形成後述硬化膜之成分,可從將感光性樹脂組成物在140℃下加熱24小時並去除溶劑後的殘存物求得。另外,總固體成分量亦可從饋入量計算。 "Total solid content of the photosensitive resin composition" refers to a component that forms a cured film described later among the components contained in the photosensitive resin composition, and can be left after the photosensitive resin composition is heated at 140 ° C for 24 hours and the solvent is removed. Find things. In addition, the total solid content can also be calculated from the feed amount.

以樹脂為主成分之組成物的硬化物所構成之膜稱為「樹脂硬化膜」。 A film made of a hardened material of a resin-based composition is called a "resin hardened film".

塗佈感光性樹脂組成物而成之膜稱為「塗膜」,使其乾燥而成之膜稱為「乾燥膜」。使該「乾燥膜」硬化而得之膜為「樹脂硬化膜」。又,「樹脂硬化膜」有時亦僅稱為「硬化膜」。 A film obtained by applying a photosensitive resin composition is referred to as a "coating film", and a film obtained by drying is referred to as a "dry film". The film obtained by hardening this "dry film" is a "resin cured film". The "resin cured film" is sometimes referred to simply as a "cured film".

「隔壁」係形成為將預定區域劃分成多數分區之形狀的樹脂硬化膜之一形態。於隔壁所劃分之分區、即隔壁所圍成之開口部例如注入下述之「印墨」,可形成「點」。 The "partition wall" is a form of a resin hardened film having a shape in which a predetermined region is divided into a plurality of sections. The "dot" can be formed by injecting the "printing ink" described below into the partition divided by the next wall, that is, the opening surrounded by the next wall.

「印墨」係統稱經進行乾燥、硬化等以後具有光學性及/或電性機能之液體的用語。 The term "printing ink" refers to a liquid that has optical and / or electrical functions after being dried and hardened.

在有機EL元件、液晶元件之濾色器及TFT(Thin Film Transistor:薄膜電晶體)陣列等光學元件中,有時會將作為各種構成要素之點使用該點形成用印墨以噴墨(IJ)法來進行圖案印刷。「印墨」包含使用於該用途之印墨。 In optical elements such as organic EL elements, color filters for liquid crystal elements, and TFT (Thin Film Transistor) arrays, dots used as dots for forming various elements may be used to form inkjet inks (IJ). Method for pattern printing. "Ink" includes printing inks used for such purposes.

「撥墨性」係不沾上述印墨之性質,具有撥水性及撥油性兩者。撥墨性可藉由例如滴下印墨時之接觸角來評估。「親墨性」係與撥墨性相反之性質,與撥墨性同樣可藉由滴下印墨時之接觸角來評估。或者,可以預定基準評估滴下印墨時印墨的濕潤擴散程度(印墨的濕潤擴散性)來評估親墨性。 "Ink repellency" refers to the properties of non-sticking the above-mentioned printing ink, and has both water repellency and oil repellency. The ink repellency can be evaluated by, for example, the contact angle when the ink is dropped. "Ink affinity" is the opposite of ink repellency, and can be evaluated by the contact angle when the ink is dripped as well as ink repellency. Alternatively, the wet spreading degree of the printing ink (wetting diffusivity of the printing ink) when the printing ink is dropped can be evaluated with a predetermined reference to evaluate the ink affinity.

「點」係表示光學元件中可光調變的最小區域。在有機EL元件、液晶元件之濾色器及有機TFT陣列之光學元件中,黑白顯示係1點=1像素,彩色顯示則例如3點(R(紅)、G(綠)、B(藍)等)=1像素。 "Dots" refer to the smallest area of light modulation in an optical element. Among organic EL elements, color filters for liquid crystal elements, and optical elements for organic TFT arrays, black and white display is 1 point = 1 pixel, and color display is, for example, 3 points (R (red), G (green), B (blue) Etc.) = 1 pixel.

以下將說明本發明之實施形態。另外,在本說明書中未特別說明之情況下,符號%表示質量%。 Embodiments of the present invention will be described below. In addition, unless otherwise specified in this specification, the symbol% means mass%.

[負型感光性樹脂組成物] [Negative photosensitive resin composition]

本發明之負型感光性樹脂組成物含有鹼可溶性樹脂(A)、交聯劑(B)、光酸產生劑(C)及撥墨劑(D),該撥墨劑(D)含有水解性矽烷化合物(s1)作為單體及/或部分水解(共)縮合物,且該水解性矽烷化合物(s1)具有氟伸烷基及/或氟烷基與水解性基。 The negative photosensitive resin composition of the present invention contains an alkali-soluble resin (A), a cross-linking agent (B), a photoacid generator (C), and an ink repellent (D), and the ink repellent (D) contains a hydrolyzability The silane compound (s1) is a monomer and / or a partially hydrolyzed (co) condensate, and the hydrolyzable silane compound (s1) has a fluoroalkylene group and / or a fluoroalkyl group and a hydrolyzable group.

本發明之負型感光性樹脂組成物更可因應需求含有溶劑(E)及其他任意成分。 The negative photosensitive resin composition of the present invention may further contain a solvent (E) and other optional components as required.

(鹼可溶性樹脂(A)) (Alkali soluble resin (A))

就本發明之負型感光性樹脂組成物中之鹼可溶性樹脂(A)來說,只要是陽離子聚合型鹼可溶性樹脂(A),即可使用而無特別限制,該陽離子聚合型鹼可溶性樹脂(A)可藉 由光酸產生劑(C)經活性光線之照射(曝光)所產生之酸的作用,與交聯劑(B)鍵結、交聯而成為鹼不溶性。 The alkali-soluble resin (A) in the negative photosensitive resin composition of the present invention can be used without particular limitation as long as it is a cation-polymerizable alkali-soluble resin (A). The cation-polymerizable alkali-soluble resin ( A) can be borrowed The action of the acid generated by the photoacid generator (C) by irradiation (exposure) with active light is bonded and crosslinked with the crosslinking agent (B) to become alkali-insoluble.

鹼可溶性樹脂(A)可舉如苯酚類及醛類,以及因應需求添加各種改質劑進行聚縮合而製得之未改質或改質之酚醛型苯酚樹脂、乙烯苯酚樹脂(以下亦稱「聚乙烯苯酚」)、N-(4-羥苯基)甲基丙烯醯胺之共聚物、及氫醌單甲基丙烯酸酯共聚物等。又,亦可使用磺醯亞胺系聚合物、含羧基聚合物、含苯酚性羥基之丙烯酸系樹脂、具有磺醯胺基之丙烯酸系樹脂及胺甲酸乙酯系樹脂等各種鹼可溶性的高分子化合物。 Examples of the alkali-soluble resin (A) include phenols and aldehydes, and unmodified or modified phenol-formaldehyde phenol resins and ethylene phenol resins (hereinafter also referred to as " Polyvinylphenol "), a copolymer of N- (4-hydroxyphenyl) methacrylamide, and a hydroquinone monomethacrylate copolymer. In addition, various alkali-soluble polymers such as a sulfonylimide-based polymer, a carboxyl group-containing polymer, an acrylic resin containing a phenolic hydroxyl group, an acrylic resin having a sulfonamide group, and a urethane-based resin can be used. Compound.

就鹼可溶性樹脂(A)來說,以酚醛型苯酚樹脂、或乙烯苯酚樹脂為佳。 The alkali-soluble resin (A) is preferably a phenol-type phenol resin or an ethylene phenol resin.

用以製造酚醛型苯酚樹脂的苯酚類及醛類,可列舉國際公開第2013/133392號之例如段落[0021]、[0022]中所記載之物等。 Examples of the phenols and aldehydes used to produce the phenolic phenol resin include those described in paragraphs [0021] and [0022] of International Publication No. 2013/133392.

從易入手性及金屬不純物少等觀點來看,上述酚醛型苯酚樹脂中又以苯酚類使用了甲酚類、二甲苯酚類等之酚醛型苯酚樹脂等為佳,且以使用甲酚類之酚醛型苯酚樹脂(以下亦稱「甲酚酚醛樹脂」)尤佳。 From the viewpoints of easy availability and low metal impurities, the above-mentioned phenol-type phenol resins are preferably phenol-type phenol-type phenol resins such as cresols and xylenols. Novolac phenol resin (hereinafter also referred to as "cresol novolac resin") is particularly preferred.

就聚乙烯苯酚而言,可列舉乙烯苯酚之均聚物、及乙烯苯酚和可與其共聚之單體的共聚物等。 Examples of polyvinylphenol include homopolymers of vinylphenol and copolymers of vinylphenol and a monomer copolymerizable therewith.

聚乙烯苯酚可使用偶氮雙異丁腈、過氧化苯甲醯等聚合引發劑,使4-乙烯苯酚、3-乙烯苯酚、2-乙烯苯酚、2-甲基-4-乙烯苯酚、2,6-二甲基-4-乙烯苯酚等乙烯苯酚單獨 或2種以上組合進行自由基聚合而製得。 Polyvinylphenol can use 4-vinylphenol, 3-vinylphenol, 2-vinylphenol, 2-methyl-4-vinylphenol, 2, and other polymerization initiators such as azobisisobutyronitrile and benzamidine peroxide. Ethylene phenol such as 6-dimethyl-4-vinylphenol alone Or it can be obtained by performing a radical polymerization in combination of 2 or more types.

可與乙烯苯酚共聚合之單體可列舉如異丙烯基苯酚、丙烯酸、甲基丙烯酸、苯乙烯、馬來酸酐、馬來醯亞胺、乙酸乙烯酯等。該等中又以乙烯苯酚之均聚物為佳,4-乙烯苯酚之均聚物尤佳。 Examples of the monomer copolymerizable with vinylphenol include isopropenylphenol, acrylic acid, methacrylic acid, styrene, maleic anhydride, maleimide, vinyl acetate, and the like. Among these, a homopolymer of vinylphenol is preferable, and a homopolymer of 4-vinylphenol is particularly preferable.

鹼可溶性樹脂(A)之質量平均分子量(Mw)以500~20,000為佳,2,000~15,000尤佳。鹼可溶性樹脂(A)之質量平均分子量(Mw)一旦過低,即使在曝光區域有產生交聯反應,依舊無法充分增大分子量,因此容易溶解於鹼顯影液。鹼可溶性樹脂(A)之質量平均分子量(Mw)一旦過大,曝光區域及未曝光區域對鹼顯影液之溶解度之差會變小,因此很難獲得良好的抗蝕圖案。 The mass average molecular weight (Mw) of the alkali-soluble resin (A) is preferably 500 to 20,000, and more preferably 2,000 to 15,000. If the mass average molecular weight (Mw) of the alkali-soluble resin (A) is too low, even if a cross-linking reaction occurs in the exposed area, the molecular weight cannot be sufficiently increased, and therefore it is easy to dissolve in the alkali developer. When the mass-average molecular weight (Mw) of the alkali-soluble resin (A) is too large, the difference in solubility between the exposed region and the unexposed region with respect to the alkali developer solution becomes small, so it is difficult to obtain a good resist pattern.

此外,質量平均分子量(Mw)係表示藉由凝膠滲透層析術(GPC)以四氫呋喃作為移動相進行測定且以標準聚苯乙烯為基準加以換算而得之質量平均分子量。又,數量平均分子量(Mn)係表示以相同GPC所測得之數量平均分子量。 In addition, the mass average molecular weight (Mw) means a mass average molecular weight measured by gel permeation chromatography (GPC) with tetrahydrofuran as a mobile phase and conversion based on standard polystyrene. The number average molecular weight (Mn) means a number average molecular weight measured by the same GPC.

鹼可溶性樹脂(A)亦可使用市售品,例如以甲酚酚醛樹脂之市售品來說,可列舉EP4020G(Mw:9,000~14,000)、EPR5010G(Mw:7,000~12,500)(以上均為商品名,旭有機材工業公司製),以聚乙烯苯酚之市售品來說,則可舉MARUKA LYNCUR M(商品名,丸善石油化學公司製)等。 Alkali-soluble resin (A) can also be a commercially available product. For example, for a commercially available product of cresol novolac resin, EP4020G (Mw: 9,000 to 14,000), EPR5010G (Mw: 7,000 to 12,500) (the above are all products) (Name, manufactured by Asahi Organic Materials Industry Co., Ltd.), and for commercially available products of polyvinyl phenol, MARUKA LYNCUR M (trade name, manufactured by Maruzan Petrochemical Co., Ltd.) and the like can be mentioned.

鹼可溶性樹脂(A)可單獨使用1種亦可將2種以上 併用。 Alkali soluble resin (A) can be used alone or in combination of two or more. And use.

負型感光性樹脂組成物之總固體成分中的鹼可溶性樹脂(A)含量以10~90質量%為佳,30~85質量%較佳,40~80質量%尤佳。含量若在上述範圍,負型感光性樹脂組成物之顯影性即佳。 The content of the alkali-soluble resin (A) in the total solid content of the negative photosensitive resin composition is preferably 10 to 90% by mass, more preferably 30 to 85% by mass, and even more preferably 40 to 80% by mass. If the content is within the above range, the developability of the negative photosensitive resin composition is good.

(交聯劑(B)) (Crosslinking agent (B))

交聯劑(B)係藉由光酸產生劑(C)經活性光線照射(曝光)所產生之酸的作用與上述鹼可溶性樹脂(A)鍵結,使鹼可溶性樹脂(A)交聯而得以成為鹼不溶性之化合物(敏酸物質)。 The cross-linking agent (B) is formed by the photoacid generator (C) being irradiated (exposed) with active light and bonded to the alkali-soluble resin (A) to crosslink the alkali-soluble resin (A). It becomes an alkali-insoluble compound (acid-sensitive substance).

就交聯劑(B)而言,宜為三聚氰胺系、苯胍系、脲系及異氰酸酯系化合物、含多官能性環氧基化合物、氧呾系化合物等低分子交聯劑及譬如烷氧基烷基化三聚氰胺樹脂或者烷氧基烷基化脲樹脂之類烷氧基烷基化胺基樹脂等高分子交聯劑等。 The crosslinking agent (B) is preferably a melamine-based, benzoguanidine System, urea-based and isocyanate-based compounds, polyfunctional epoxy-containing compounds, low-molecular-weight compounds such as oxyfluorene-based compounds, and alkoxyalkylated melamine resins or alkoxyalkylated urea resins Polymer crosslinking agents such as oxyalkylated amine resins.

就三聚氰胺系化合物來說,可列舉如三聚氰胺、甲氧甲基化三聚氰胺、乙氧甲基化三聚氰胺、丙氧甲基化三聚氰胺、丁氧甲基化三聚氰胺、六羥甲基三聚氰胺等。 Examples of the melamine-based compound include melamine, methoxymethylated melamine, ethoxymethylated melamine, propoxymethylated melamine, butoxymethylated melamine, and hexamethylol melamine.

就苯胍系化合物來說,可列舉如苯胍、甲基化苯胍等。 Benzoguanidine For compounds such as benzoguanidine Methylated benzoguanidine Wait.

就脲系化合物來說,可列舉如脲、單羥甲脲、二羥甲脲、烷氧基亞甲脲、N-烷氧基亞甲脲、伸乙脲、伸乙脲羧酸、肆(甲氧甲基)乙炔脲等。異氰酸酯系化合物可列舉如 六亞甲基二異氰酸酯、1,4-環己基二異氰酸酯、二異氰酸甲苯酯、雙異氰酸酯甲基環己烷、雙異氰酸酯甲基苯、二異氰酸伸乙酯等。 Examples of the urea-based compound include urea, monomethylurea, dimethylolurea, alkoxymethyleneurea, N-alkoxymethyleneurea, diethylurea, diethylureacarboxylic acid, and Methoxymethyl) acetylene urea and the like. Examples of the isocyanate-based compound include Hexamethylene diisocyanate, 1,4-cyclohexyl diisocyanate, toluene diisocyanate, diisocyanate methylcyclohexane, diisocyanate methylbenzene, diisocyanate, and the like.

就含有多官能性環氧基之化合物來說,以1分子中含有1個以上苯環或雜環且含有2個以上環氧基者為佳。可列舉如雙苯酚丙酮二環氧丙基醚、苯酚酚醛環氧樹脂、甲酚酚醛環氧樹脂、三聚異氰酸三環氧丙酯、四環氧丙基-間茬二胺、四環氧丙基-1,3-雙(胺基乙基)環己烷、四苯基環氧丙基醚乙烷、三苯基環氧丙基醚乙烷、雙苯酚六氟丙酮二環氧丙基醚、4,4’-雙(2,3-環氧丙氧基)-八氟聯苯、三環氧丙基-對胺基苯酚、四環氧丙基間茬二胺等。 The compound containing a polyfunctional epoxy group is preferably one containing more than one benzene ring or heterocyclic ring and containing two or more epoxy groups in one molecule. Examples include bisphenol acetone diglycidyl ether, phenol novolac epoxy resin, cresol novolac epoxy resin, triglycidyl isocyanate, tetraglycidyl-interstitial diamine, tetracyclic Oxypropyl-1,3-bis (aminoethyl) cyclohexane, tetraphenylglycidyl ether ethane, triphenylglycidyl ether ethane, bisphenol hexafluoroacetone dipropylene oxide Ether, 4,4'-bis (2,3-glycidoxy) -octafluorobiphenyl, triglycidyl-p-aminophenol, tetraglycidyl diamine and the like.

就氧呾系化合物而言,以1分子中含有2個以上氧雜環丁烷基者為佳,可列舉如伸茬基雙氧呾、3-乙基-3{[3-乙基氧呾-3-基)甲氧基]甲基}氧呾等。 As for the oxygen-based compound, it is preferable to include two or more oxetanyl groups in one molecule, and examples thereof include stilbene-based dioxin and 3-ethyl-3 {[3-ethyloxin -3-yl) methoxy] methyl} oxamidine and the like.

就烷氧基烷基化三聚氰胺樹脂或者烷氧基烷基化脲樹脂而言,可列舉甲氧甲基化三聚氰胺樹脂、乙氧甲基化三聚氰胺樹脂、丙氧甲基化三聚氰胺樹脂、丁氧甲基化三聚氰胺樹脂、甲氧甲基化脲樹脂、乙氧甲基化脲樹脂、丙氧甲基化脲樹脂、丁氧甲基化脲樹脂等。 Examples of the alkoxyalkylated melamine resin or alkoxyalkylated urea resin include methoxymethylated melamine resin, ethoxymethylated melamine resin, propoxymethylated melamine resin, and butoxymethyl Mesylated melamine resin, methoxymethylated urea resin, ethoxymethylated urea resin, propoxymethylated urea resin, butoxymethylated urea resin, and the like.

作為交聯劑(B),亦可使用市售品,例如,就烷氧基甲基化胺基樹脂之市售品來說可列舉PL-1170、PL-1174、UFR65、CYMEL300、CYMEL303(以上均為Mitsui Cytec Ltd.製)、BX-4000、NIKALAC MW-30、MX290、MW-100LM(以上均為Sanwa Chemical Co.Ltd.製)等。 As the cross-linking agent (B), a commercially available product may be used. For example, as a commercially available product of an alkoxymethylated amine resin, PL-1170, PL-1174, UFR65, CYMEL300, CYMEL303 (above All are manufactured by Mitsui Cytec Ltd.), BX-4000, NIKALAC MW-30, MX290, MW-100LM (all of which are manufactured by Sanwa Chemical Co. Ltd.) and the like.

交聯劑(B)可單獨使用或2種以上混合使用。相對於100質量份之鹼可溶性樹脂(A),其摻混量以2~50質量份為佳,較理想為5~30質量份,更理想為10~25質量份。交聯劑(B)之使用量太少,交聯反應便難以充分進行,使用鹼顯影液顯影後的抗蝕圖案之殘膜率會下降或容易產生抗蝕圖案之膨潤或蜿蜒等變形。交聯劑(B)之使用量太多,便有解析度下降之虞。 The cross-linking agent (B) can be used alone or in combination of two or more. With respect to 100 parts by mass of the alkali-soluble resin (A), the blending amount is preferably 2 to 50 parts by mass, more preferably 5 to 30 parts by mass, and even more preferably 10 to 25 parts by mass. If the amount of the cross-linking agent (B) is too small, the cross-linking reaction will be difficult to proceed sufficiently. The residual film rate of the resist pattern after development using an alkali developing solution will be reduced, or deformation of the resist pattern such as swelling or serpentine will easily occur. If the amount of the cross-linking agent (B) used is too much, the resolution may decrease.

(光酸產生劑(C)) (Photoacid generator (C))

光酸產生劑(C)只要是照射活性光線就會分解而產生酸之化合物即無特別限制。在使用陽離子聚合型鹼可溶性樹脂(A)之感光性樹脂組成物中,可從一般作為光酸產生劑使用之化合物中選擇任意的化合物使用。 The photoacid generator (C) is not particularly limited as long as it is a compound that is decomposed by irradiation with active light to generate an acid. In the photosensitive resin composition using a cationically polymerizable alkali-soluble resin (A), an arbitrary compound can be selected from compounds generally used as a photoacid generator.

另外,在本發明之負型感光性樹脂組成物中,從光酸產生劑(C)生成之酸關乎上述鹼可溶性樹脂(A)與交聯劑(B)之鍵結,同時對撥墨劑(D)所含之含氟水解性矽烷化合物(s1)的水解反應可作為觸媒發揮作用。通常,於含有水解性矽烷化合物之組成物中會一併摻混酸觸媒。因而反應緩慢進行且貯藏穩定性有問題,但在本發明之負型感光性樹脂組成物中無需於光酸產生劑(C)之外又另摻混酸,因此貯藏穩定性良好。 In addition, in the negative photosensitive resin composition of the present invention, the acid generated from the photoacid generator (C) is related to the bond between the alkali-soluble resin (A) and the cross-linking agent (B), and the ink repellent agent is simultaneously formed. The hydrolysis reaction of the fluorine-containing hydrolyzable silane compound (s1) contained in (D) functions as a catalyst. Usually, an acid catalyst is added to a composition containing a hydrolyzable silane compound. Therefore, the reaction proceeds slowly and storage stability is a problem. However, the negative photosensitive resin composition of the present invention does not need to be mixed with an acid in addition to the photoacid generator (C), and therefore has good storage stability.

光酸產生劑(C)係藉由活性光線之照射而分解產生酸。具體而言,該活性光線可列舉紫外光、X射線、電子射線等高能量射線。使用負型感光性樹脂組成物來製造光學元件用隔壁時,於曝光宜使用i線(365nm)、h線 (405nm)及g線(436nm)。就光酸產生劑(C)來說,宜選擇在曝光所用光線之波長中吸光度大的光酸產生劑。 The photoacid generator (C) is decomposed by irradiation with active light to generate an acid. Specific examples of the active light include high-energy rays such as ultraviolet light, X-rays, and electron rays. When a negative photosensitive resin composition is used to manufacture a partition for an optical element, i-line (365 nm) and h-line should be used for exposure (405nm) and g-line (436nm). As for the photoacid generator (C), it is preferable to select a photoacid generator having a large absorbance at the wavelength of light used for exposure.

光酸產生劑具體上可列舉鎓鹽系光酸產生劑或非離子系光酸產生劑。就鎓鹽系光酸產生劑來說,可列舉如具有下式(C1)或(C2)所示三苯基鋶骨架之化合物的鎓鹽及錪鹽系化合物。另外,在化合物(C1)及(C2)中,三苯基鋶骨架之苯基之氫原子業經取代的化合物亦可作為光酸產生劑使用。 Specific examples of the photoacid generator include an onium salt-based photoacid generator or a nonionic photoacid generator. Examples of the onium salt-based photoacid generator include an onium salt and a sulfonium salt-based compound of a compound having a triphenylsulfonium skeleton represented by the following formula (C1) or (C2). In addition, among the compounds (C1) and (C2), a compound in which a hydrogen atom of a phenyl group of a triphenylsulfonium skeleton is substituted may be used as a photoacid generator.

式(C1)及(C2)中,Xa-及Xb-表示陰離子。具體而言,磷系陰離子可舉例如PF6 -、(Rf1)nPF6-n -(Rf1為氟烷基,n為1~3)等,磺酸鹽系陰離子則可舉例如RaSO3 -(Ra為一部分或全部可經氟原子取代之碳數1~12之烷基或碳數6~18之芳基)等。就RaSO3 -之Ra而言,例如可列舉-CF3、-C4F9、-C8F17等全氟烷基、-C6F5等全氟芳基及-Ph-CH3(惟,Ph表示苯基)等芳基等。 In the formulae (C1) and (C2), Xa - and Xb - represent anions. Specifically, for example phosphorus-based anion such as PF 6 -, (R f1) n PF 6-n - (R f1 is a fluoroalkyl group, n is 1 to 3) or the like, for example may be sulfonate anion such as R a SO 3 - (R a may be partially or entirely substituted with the fluorine atom or an alkyl group having a carbon number of 1 to 12 carbon atoms of the aryl group having 6 to 18) and the like. To R a SO 3 - of R a, for example, include -CF 3, -C 4 F 9, -C 8 F 17 like a perfluoroalkyl group, -C 6 F 5 perfluorinated aryl group and the like -Ph- An aryl group such as CH 3 (however, Ph represents a phenyl group).

而,該等鎓鹽中,陽離子部吸收照射之光,陰離子部則為酸之起源。 In these onium salts, the cationic part absorbs the light of irradiation, and the anionic part is the origin of the acid.

在化合物(C1)及(C2)中,例如以在i線(365nm)下 進行曝光時使用之化合物而言,從在波長365nm下之吸光度大之觀點及易入手之觀點來看,以下式(C1-1)所示之三苯基鋶.九氟丁烷磺酸鹽或者是下式(C2-1)及(C2-2)各自所示之三芳基鋶.PF6鹽及三芳基鋶.特殊磷系鹽為佳。 Among the compounds (C1) and (C2), for example, in the case of a compound used for exposure under i-line (365 nm), from the viewpoint of a large absorbance at a wavelength of 365 nm and a viewpoint of easy availability, the following formula ( C1-1) triphenyl hydrazone. The nonafluorobutane sulfonate is a triarylsulfonium represented by each of the following formulae (C2-1) and (C2-2). PF 6 salt and triaryl hydrazone. Special phosphorus salts are preferred.

式(C2-2)中,Rf1為氟烷基,n為1~3。 In the formula (C2-2), R f1 is a fluoroalkyl group, and n is 1 to 3.

就錪鹽系化合物來說,可列舉三氟甲磺酸二苯基錪、三氟甲磺酸(對三級丁氧基苯基)苯基錪、對甲苯磺酸二苯基錪、對甲苯磺酸(對三級丁氧基苯基)苯基錪等。 Examples of the phosphonium salt compound include diphenylsulfonium triflate, p-trifluoromethanesulfonic acid (p-tert-butoxyphenyl) phenylsulfonium, diphenylsulfonium p-toluenesulfonate, and p-toluene Sulfonic acid (p-tert-butoxyphenyl) phenylhydrazone and the like.

鎓鹽系光酸產生劑亦可使用市售品。例如,可列舉TPSP-PFBS(化合物(C1-1)、商品名、東洋合成工業公司製)、CPI-100P(化合物(C2-1)、商品名、San-Apro Ltd.製)、CPI-210S(化合物(C2-2)、商品名、San-Apro Ltd.製)。 A commercially available onium salt-based photoacid generator can also be used. Examples include TPSP-PFBS (compound (C1-1), trade name, manufactured by Toyo Kogyo Co., Ltd.), CPI-100P (compound (C2-1), trade name, manufactured by San-Apro Ltd.), CPI-210S (Compound (C2-2), trade name, manufactured by San-Apro Ltd.).

就非離子系光酸產生劑來說,例如可舉具有下述結構的化合物:具有萘二甲醯亞胺骨架、硝苯骨架、重 氮甲烷骨架、苯基苯乙酮骨架、9-氧硫骨架、三骨架且已鍵結氯原子、烷磺酸、芳基磺酸等。 Examples of the non-ionic photoacid generator include compounds having the following structure: a naphthalene dimethyl imine skeleton, a nifediene skeleton, a diazomethane skeleton, a phenylacetophenone skeleton, and 9-oxysulfur Skeleton, three The backbone is bonded to a chlorine atom, an alkanesulfonic acid, an arylsulfonic acid, and the like.

此種化合物具體上可列舉下式(C3)、下式(C4)、下式(C5)、下式(C6)及下式(C7)各自所示之具有具萘二甲醯亞胺骨架、硝苯骨架、重氮甲烷骨架、苯基苯乙酮骨架、或9-氧硫骨架且已鍵結烷磺酸、芳基磺酸等之結構的化合物。又,可舉下式(C8)所示之具有三骨架及氯原子的化合物。此外,還可列舉下式(C9)所示之二烷基乙二醛二肟之磺醯基化合物、及下式(C10)所示之磺醯氧基醯亞胺基乙腈等。 Specific examples of such compounds include compounds having a naphthalenedimethylimide skeleton represented by the following formula (C3), (C4), (C5), (C6), and (C7): Nifediene skeleton, diazomethane skeleton, phenylacetophenone skeleton, or 9-oxysulfur A skeletal compound having a structure such as alkanesulfonic acid or arylsulfonic acid. In addition, the following formula (C8) has three Skeleton and chlorine atom compounds. In addition, a sulfofluorenyl compound of a dialkylglyoxaldioxime represented by the following formula (C9), and a sulfofluorenoxyiminoacetonitrile represented by the following formula (C10) can also be cited.

另外,在化合物(C3)、(C4)、(C6)及(C7)中,形成各化合物骨架的苯環之氫原子業經取代的化合物亦具有作為光酸產生劑之功能。 In addition, among the compounds (C3), (C4), (C6), and (C7), compounds in which the hydrogen atom of the benzene ring forming the skeleton of each compound is substituted also have a function as a photoacid generator.

[化3] [Chemical 3]

式(C3)~(C7)、(C9)及(C10)中之Rb1~Rb5、Rb7及Rb9係分別獨立為可一部分或全部被氟原子取代之直鏈狀、支鏈狀或環狀(惟,亦包含部分具有環狀結構者)的碳數1~12之烷基或碳數6~18之芳基。具體而言,可列舉-CF3、-C4F9、-C8F17等全氟烷基、-C6F5等全氟芳基及-Ph-CH3 等芳基等。式(C8)、(C9)及(C10)中之Rb6、Rb8及Rb10係分別獨立為可具有取代基之碳數1~18之有機基。 R b1 to R b5 , R b7 and R b9 in the formulae (C3) to (C7), (C9) and (C10) are each independently a linear, branched or Cyclic (but also including those having a cyclic structure) alkyl groups having 1 to 12 carbon atoms or aryl groups having 6 to 18 carbon atoms. Specific examples include perfluoroalkyl groups such as -CF 3 , -C 4 F 9 , and -C 8 F 17; perfluoroaryl groups such as -C 6 F 5 ; and aryl groups such as -Ph-CH 3 . R b6 , R b8 and R b10 in the formulae (C8), (C9) and (C10) are each independently an organic group having 1 to 18 carbon atoms which may have a substituent.

另外,在該等非離子系光酸產生劑中,已鍵結氯原子、烷磺酸、芳基磺酸等之部分會成為酸之產生源。 In addition, among these non-ionic photoacid generators, a portion where a chlorine atom, an alkanesulfonic acid, an arylsulfonic acid, or the like has been bonded becomes a source of generation of an acid.

就非離子系光酸產生劑而言,例如以在i線(365nm)下進行曝光時使用的化合物而言,從在波長365nm下之吸光度大之觀點或易入手之觀點來看,以下式(C3-1)所示之N-三氟甲磺酸-1,8-萘二甲醯亞胺、下式(C6-1)所示之2-苯基-2-(對甲苯磺醯氧基)苯乙酮、及下式(C8-1)所示之2-(4-甲氧苯乙烯基)-4,6-雙(三氯甲基)-1,3,5-三等為佳。 For a nonionic photoacid generator, for example, in the case of a compound used when exposure is performed at i-line (365nm), from the viewpoint of a large absorbance at a wavelength of 365nm or a viewpoint of easy availability, the following formula ( C3-1) N-trifluoromethanesulfonic acid-1,8-naphthalenedimethylimide, 2-phenyl-2- (p-toluenesulfonyloxy) group represented by the following formula (C6-1) ) Acetophenone and 2- (4-methoxystyryl) -4,6-bis (trichloromethyl) -1,3,5-tris represented by the following formula (C8-1) And so on.

非離子系光酸產生劑亦可使用市售品。舉例如NHNI-TF(化合物(C3-1)、商品名、東洋合成工業公司製)。 As the non-ionic photoacid generator, a commercially available product may be used. For example, NHNI-TF (compound (C3-1), trade name, manufactured by Toyo Kogyo Co., Ltd.).

又,在光作用下從該等鎓鹽系光酸產生劑及非離子系光酸產生劑產生之酸係鹽酸、烷磺酸、芳基磺酸、以及部分或完全氟化之芳基磺酸、烷磺酸等。 In addition, acidic hydrochloric acid, alkanesulfonic acid, arylsulfonic acid, and partially or fully fluorinated arylsulfonic acid generated from the onium salt-based photoacid generator and nonionic photoacid generator under the action of light. , Alkane sulfonic acid, etc.

光酸產生劑(C)可單獨使用1種上述化合物,亦可將2種以上併用。 The photoacid generator (C) may be used singly or in combination of two or more kinds.

相對於100質量份之鹼可溶性樹脂(A),光酸產生劑(C) 之含量以0.1~20質量份為佳,0.5~10質量份較佳,1~8質量份尤佳。藉由使光酸產生劑(C)之含量在上述範圍,可製得上表面具有充分的撥墨性且可形成微細且精度高之圖案的隔壁。 Photoacid generator (C) based on 100 parts by mass of alkali-soluble resin (A) The content is preferably from 0.1 to 20 parts by mass, more preferably from 0.5 to 10 parts by mass, and even more preferably from 1 to 8 parts by mass. When the content of the photoacid generator (C) is in the above range, a partition wall having sufficient ink repellency on the upper surface and capable of forming a fine and highly accurate pattern can be obtained.

(撥墨劑(D)) (Ink Repellent (D))

本發明中之撥墨劑(D)含有水解性矽烷化合物(s1),該水解性矽烷化合物(s1)具有氟伸烷基及/或氟烷基與水解性基。撥墨劑(D)可單獨為水解性矽烷化合物(s1),亦可為水解性矽烷化合物(s1)與作為後述任意成分之水解性矽烷化合物(s1)以外之水解性矽烷化合物的混合物。撥墨劑(D)宜僅由含有水解性矽烷化合物(s1)之水解性矽烷化合物構成。 The ink repellent (D) in the present invention contains a hydrolyzable silane compound (s1), which has a fluoroalkylene group and / or a fluoroalkyl group and a hydrolyzable group. The ink repellent (D) may be a hydrolyzable silane compound (s1) alone, or a mixture of a hydrolyzable silane compound (s1) and a hydrolyzable silane compound other than the hydrolyzable silane compound (s1) as an optional component described later. The ink repellent (D) is preferably composed of only a hydrolyzable silane compound containing a hydrolyzable silane compound (s1).

撥墨劑(D)含有水解性矽烷化合物(s1)作為單體及/或部分水解(共)縮合物。即,撥墨劑(D)可含有水解性矽烷化合物(s1)作為單體,亦可含有水解性矽烷化合物(s1)作為其部分水解縮合物。又,撥墨劑(D)含有水解性矽烷化合物(s1)以外之水解性矽烷化合物時,可以水解性矽烷化合物(s1)與其以外之水解性矽烷化合物的部分水解(共)縮合物來含有。此外,水解性矽烷化合物(s1)亦可作為選自單體、其部分水解縮合物、及與其他水解性矽烷化合物之部分水解(共)縮合物的2種以上混合物而含於撥墨劑(D)中。 The ink repellent (D) contains a hydrolyzable silane compound (s1) as a monomer and / or a partially hydrolyzed (co) condensate. That is, the ink repellent (D) may contain a hydrolyzable silane compound (s1) as a monomer, and may also contain a hydrolyzable silane compound (s1) as a partially hydrolyzed condensate thereof. When the ink repellent (D) contains a hydrolyzable silane compound other than the hydrolyzable silane compound (s1), it may be contained as a partially hydrolyzed (co) condensate of the hydrolyzable silane compound (s1) and other hydrolyzable silane compounds. In addition, the hydrolyzable silane compound (s1) may be contained in the ink repellent agent as a mixture of two or more kinds selected from monomers, partial hydrolyzed condensates thereof, and partially hydrolyzed (co) condensates with other hydrolyzable silane compounds. D).

以下所謂撥墨劑(D)含有特定的水解性矽烷化合物係表示含有該水解性矽烷化合物作為單體及/或部分水解(共)縮合物之意。在此,「單體及/或部分水解(共)縮合 物」與上述定義範圍相同。 In the following, the ink repellent (D) contains a specific hydrolyzable silane compound means that it contains the hydrolyzable silane compound as a monomer and / or a partially hydrolyzed (co) condensate. Here, "monomer and / or partial hydrolysis (co) condensation "Material" has the same definition as above.

就從水解性矽烷化合物(s1)具有氟伸烷基及/或氟烷基來看,撥墨劑(D)具有會在使用含其之負型感光性樹脂組成物來形成硬化膜之過程中移行至上表面的性質(上表面移行性)及撥墨性。藉由使用撥墨劑(D),所得隔壁之包含上表面的上層部會成為撥墨劑(D)緻密存在之層(以下有時亦稱「撥墨層」),可對隔壁上表面賦予撥墨性。此種撥墨層主要是由含有水解性矽烷化合物(s1)之水解性矽烷化合物的硬化物形成,由此點來看,在即使經紫外線/臭氧洗淨處理等親墨化處理仍可保持優異的撥墨性的觀點上相當有利。 Considering that the hydrolyzable silane compound (s1) has a fluoroalkylene group and / or a fluoroalkyl group, the ink repellent agent (D) has a process of forming a cured film using the negative photosensitive resin composition containing the ink repellent agent (D). Properties of migration to the upper surface (top surface migration) and ink repellency. By using the ink-repellent agent (D), the upper layer portion including the upper surface of the obtained partition wall becomes a layer where the ink-repellent agent (D) exists densely (hereinafter sometimes referred to as "ink-repellent layer"), and the upper surface of the partition wall can be imparted. Repellency. This ink repellent layer is mainly formed of a hardened product of a hydrolyzable silane compound containing a hydrolyzable silane compound (s1). From this point of view, it can maintain excellent ink-repellent treatment even after ultraviolet / ozone cleaning treatment. It is quite advantageous from the viewpoint of ink repellency.

從上表面移行性與撥墨性之觀點來看,撥墨劑(D)中之氟原子含有率以1~40質量%為佳,5~35質量%較佳,10~30質量%尤佳。撥墨劑(D)之氟原子含有率若在上述範圍之下限值以上,便可對硬化膜上表面賦予良好的撥墨性;若在上限值以下,與負型感光性樹脂組成物中其他成分的相溶性即佳。 From the viewpoint of the upper surface migration and ink repellency, the fluorine atom content in the ink repellent (D) is preferably from 1 to 40% by mass, more preferably from 5 to 35% by mass, and even more preferably from 10 to 30% by mass. . If the fluorine atom content of the ink repellent (D) is above the lower limit of the above range, a good ink repellency can be imparted to the upper surface of the cured film; if it is below the upper limit, it is compatible with a negative photosensitive resin composition The compatibility of other ingredients in the compound is better.

撥墨劑(D)宜是由含有水解性矽烷化合物(s1)之水解性矽烷化合物之實質單體所構成的混合物(以下亦稱「混合物(M)」)、或是該混合物(M)的部分水解(共)縮合物。該混合物(M)含有具有氟伸烷基及/或氟烷基與水解性基之水解性矽烷化合物(s1)作為必須成分,並任意含有水解性矽烷化合物(s1)以外之水解性矽烷化合物。 The ink repellent (D) is preferably a mixture (hereinafter also referred to as a "mixture (M)") composed of a substantial monomer of a hydrolyzable silane compound containing a hydrolyzable silane compound (s1), or a mixture of the same (M). Partially hydrolyzed (co) condensate. This mixture (M) contains a hydrolyzable silane compound (s1) having a fluoroalkylene group and / or a fluoroalkyl group and a hydrolyzable group as an essential component, and optionally contains a hydrolyzable silane compound other than the hydrolyzable silane compound (s1).

另外,所謂水解性矽烷化合物實質上為單體並 不單指水解性矽烷化合物全數為單體之意,還意味著亦可含有2~10聚物程度的低分子量之部分水解縮合物,甚至意味可僅由該部分水解縮合物構成。 In addition, the so-called hydrolyzable silane compound is substantially a monomer and It does not only mean that all of the hydrolyzable silane compounds are monomers, but also means that it may contain a partially hydrolyzed condensate with a low molecular weight of about 2 to 10 polymers, and even means that the partially hydrolyzed condensate may be composed only of the partially hydrolyzed condensate.

就混合物(M)任意含有之水解性矽烷化合物來說,可列舉以下水解性矽烷化合物(s2)~(s4)。此外,亦可含有其他水解性矽烷化合物。混合物(M)任意含有之水解性矽烷化合物以水解性矽烷化合物(s2)尤佳。而,撥墨劑(D)含有水解性矽烷化合物(s4)時,撥墨劑(D)宜由混合物(M)構成。不含水解性矽烷化合物(s4)時,撥墨劑(D)可由混合物(M)構成,亦可為其部分水解(共)縮合物。 Examples of the hydrolyzable silane compound contained in the mixture (M) include the following hydrolyzable silane compounds (s2) to (s4). It may also contain other hydrolyzable silane compounds. The hydrolyzable silane compound optionally contained in the mixture (M) is particularly preferably a hydrolyzable silane compound (s2). When the ink repellent (D) contains a hydrolyzable silane compound (s4), the ink repellent (D) is preferably composed of a mixture (M). When the hydrolyzable silane compound (s4) is not contained, the ink repellent (D) may be composed of the mixture (M), or may be a partially hydrolyzed (co) condensate thereof.

水解性矽烷化合物(s2);於矽原子鍵結有4個水解性基之水解性矽烷化合物。 Hydrolyzable silane compound (s2); a hydrolyzable silane compound having 4 hydrolyzable groups bonded to a silicon atom.

水解性矽烷化合物(s3);僅具有烴基與水解性基作為鍵結於矽原子之基的水解性矽烷化合物。 Hydrolyzable silane compound (s3): A hydrolyzable silane compound having only a hydrocarbon group and a hydrolyzable group as a group bonded to a silicon atom.

水解性矽烷化合物(s4);具有陽離子聚合性基及水解性基且不含氟原子之水解性矽烷化合物。 Hydrolyzable silane compound (s4); Hydrolyzable silane compound having a cationic polymerizable group and a hydrolyzable group and containing no fluorine atom.

以下針對水解性矽烷化合物(s1)~(s4)及其他水解性矽烷化合物加以說明。 The hydrolyzable silane compounds (s1) to (s4) and other hydrolyzable silane compounds are described below.

<1>水解性矽烷化合物(s1) <1> Hydrolyzable Silane Compound (s1)

藉由使用水解性矽烷化合物(s1),撥墨劑(D)會以氟伸烷基及/或氟烷基之形態具有氟原子,並具有優異的上表面移行性及撥墨性。為了將水解性矽烷化合物(s1)所具之該等性質提升到更高水準,水解性矽烷化合物(s1)具有選自於由氟烷基、全氟伸烷基及全氟烷基所構成群組中之至 少1種較佳,且以具有全氟烷基尤佳。又,含有醚性氧原子之全氟烷基亦佳。即,作為水解性矽烷化合物(s1)最佳的化合物係具有全氟烷基及/或含醚性氧原子之全氟烷基的化合物。 By using a hydrolyzable silane compound (s1), the ink repellent (D) has a fluorine atom in the form of a fluoroalkylene group and / or a fluoroalkyl group, and has excellent upper surface migration and ink repellency. In order to raise these properties of the hydrolyzable silane compound (s1) to a higher level, the hydrolyzable silane compound (s1) has a group selected from the group consisting of a fluoroalkyl group, a perfluoroalkylene group, and a perfluoroalkyl group. Up to One less is preferred, and a perfluoroalkyl group is particularly preferred. A perfluoroalkyl group containing an etheric oxygen atom is also preferred. That is, the most suitable compound as the hydrolyzable silane compound (s1) is a compound having a perfluoroalkyl group and / or an etheric oxygen atom-containing perfluoroalkyl group.

水解性基可列舉烷氧基、鹵素原子、醯基、異氰酸酯基、胺基、胺基之至少1個氫已被烷基取代之基等。從容易使藉由水解反應成為羥基(矽烷醇基)再於分子間進行縮合反應形成Si-O-Si鍵之反應圓滑進行的觀點來看,以碳原子數1~4之烷氧基或鹵素原子為佳,甲氧基、乙氧基或氯原子較佳,且以甲氧基或乙氧基尤佳。 Examples of the hydrolyzable group include an alkoxy group, a halogen atom, a fluorenyl group, an isocyanate group, an amine group, and a group in which at least one hydrogen of the amine group has been replaced with an alkyl group. From the viewpoint of facilitating the smooth reaction of forming a Si-O-Si bond by a hydrolysis reaction to form a hydroxyl group (silanol group) and then performing a condensation reaction between the molecules, an alkoxy group or a halogen having 1 to 4 carbon atoms Atoms are preferred, methoxy, ethoxy, or chlorine atoms are preferred, and methoxy or ethoxy is particularly preferred.

水解性矽烷化合物(s1)可單獨使用1種亦可將2種以上併用。 The hydrolyzable silane compound (s1) may be used alone or in combination of two or more.

作為水解性矽烷化合物(s1),以下式(dx-1)所示之化合物為佳。 The hydrolyzable silane compound (s1) is preferably a compound represented by the following formula (dx-1).

(A-RF11)a-Si(RH11)bX11 (4-a-b)…(dx-1) (AR F11 ) a -Si (R H11 ) b X 11 (4-ab) … (dx-1)

式(dx-1)中,RF11係含有至少1個氟伸烷基且可含有醚性氧原子之碳原子數1~16之2價有機基。 In the formula (dx-1), R F11 is a divalent organic group having 1 to 16 carbon atoms containing at least one fluoroalkylene group and may contain etheric oxygen atoms.

RH11為碳原子數1~6之烴基。 R H11 is a hydrocarbon group having 1 to 6 carbon atoms.

a為1或2,b為0或1,a+b為1或2。 a is 1 or 2, b is 0 or 1, and a + b is 1 or 2.

A為氟原子或下式(Ia)所示之基。 A is a fluorine atom or a group represented by the following formula (Ia).

-Si(RH12)cX12 (3-c)…(Ia) -Si (R H12 ) c X 12 (3-c) … (Ia)

RH12為碳原子數1~6之烴基。 R H12 is a hydrocarbon group having 1 to 6 carbon atoms.

c為0或1。 c is 0 or 1.

X11及X12分別獨立為水解性基。 X 11 and X 12 are each independently a hydrolyzable group.

X11有多數個存在時,該等可互異亦可相同。 When there is a plurality of X 11 , these may be different or the same.

X12有多數個存在時,該等可互異亦可相同。 When there is a plurality of X 12 , these may be different or the same.

A-RF11有多數個存在時,該等可互異亦可相同。 When there are multiple AR F11 , these can be different or the same.

化合物(dx-1)係具有1個或2個雙或三官能性之水解性矽基的含氟水解性矽烷化合物。 The compound (dx-1) is a fluorine-containing hydrolyzable silane compound having one or two di- or tri-functional hydrolyzable silyl groups.

RH11及RH12分別獨立為碳原子數1~3之烴基為佳,且以甲基尤佳。 R H11 and R H12 are each independently a hydrocarbon group having 1 to 3 carbon atoms, and particularly preferably a methyl group.

式(dx-1)中,以a為1且b為0或1尤佳。 In formula (dx-1), it is particularly preferable that a is 1 and b is 0 or 1.

X11及X12之具體例及理想樣態如同上述。 Specific examples and ideal aspects of X 11 and X 12 are as described above.

水解性矽烷化合物(s1)以下式(dx-1a)所示之化合物尤佳。 The hydrolyzable silane compound (s1) is particularly preferably a compound represented by the following formula (dx-1a).

T-RF12-Q11-SiX11 3…(dx-1a) TR F12 -Q 11 -SiX 11 3 … (dx-1a)

式(dx-1a)中,RF12為碳原子數2~15且可含有醚性氧原子之全氟伸烷基。 In the formula (dx-1a), R F12 is a perfluoroalkylene group having 2 to 15 carbon atoms and which may contain an ethereal oxygen atom.

T為氟原子或下式(Ib)所示之基。 T is a fluorine atom or a group represented by the following formula (Ib).

-Q12-SiX12 3…(Ib) -Q 12 -SiX 12 3 … (Ib)

X11及X12分別獨立為水解性基。 X 11 and X 12 are each independently a hydrolyzable group.

3個X11可互異亦可相同。 The three X 11 can be different or the same.

3個X12可互異亦可相同。 The three X 12 can be different or the same.

Q11及Q12係分別獨立表示碳原子數1~10且不含氟原子之2價有機基。 Q 11 and Q 12 each independently represent a divalent organic group having 1 to 10 carbon atoms and not containing a fluorine atom.

式(dx-1a)中T為氟原子之情況下,RF12以碳原子數4~8之全氟伸烷基或碳原子數4~10且含有醚性氧原子之全氟伸烷基為佳,以碳原子數4~8之全氟伸烷基較佳, 且以碳原子數6之全氟伸烷基尤佳。 When T in the formula (dx-1a) is a fluorine atom, R F12 is a perfluoroalkylene group having 4 to 8 carbon atoms or a perfluoroalkylene group having 4 to 10 carbon atoms and containing an etheric oxygen atom as Preferably, a perfluoroalkylene group having 4 to 8 carbon atoms is preferred, and a perfluoroalkylene group having 6 carbon atoms is particularly preferred.

又,式(dx-1a)中T為基(Ib)之情況下,RF12以碳原子數3~15之全氟伸烷基或碳原子數3~15且含有醚性氧原子之全氟伸烷基為佳,且以碳原子數4~6之全氟伸烷基尤佳。 When T is a group (Ib) in formula (dx-1a), R F12 is a perfluoroalkylene group having 3 to 15 carbon atoms or a perfluoro group having 3 to 15 carbon atoms and containing an etheric oxygen atom. Alkylene is preferred, and perfluoroalkylene having 4 to 6 carbon atoms is particularly preferred.

RF12為上述基之情況下,撥墨劑(D)具有良好的撥墨性,且化合物(dx-1a)於溶劑中之溶解性佳。 In the case where R F12 is the above-mentioned group, the ink repellent (D) has good ink repellency, and the compound (dx-1a) has good solubility in a solvent.

就RF12之結構而言,可列舉直鏈結構、支鏈結構、環結構、部分具有環之結構等,以直鏈結構為佳。 As for the structure of R F12 , straight chain structure, branched chain structure, ring structure, and some structures having a ring can be listed, and a straight chain structure is preferred.

RF12之具體例例如可列舉國際公開第2014/046209號之段落[0043]中所記載之物等。 Specific examples of R F12 include, for example, those described in paragraph [0043] of International Publication No. 2014/046209.

當顯示分別於右側鍵結位置鍵結Si且於左側鍵結位置鍵結RF12時,具體而言Q11及Q12宜為以-(CH2)i1-(i1為1~5之整數)、-CH2O(CH2)i2-(i2為1~4之整數)、-SO2NR1-(CH2)i3-(R1為氫原子、甲基或乙基,i3為1~4之整數,且R1與(CH2)i3之碳原子數合計為4以下之整數)、或-(C=O)-NR1-(CH2)i4-(R1與上述相同,i4為1~4之整數,且R1與(CH2)i4之碳原子數合計為4以下之整數)表示之基。就Q11及Q12而言,以i1為2~4之整數之-(CH2)i1-較佳,且以-(CH2)2-尤佳。 When Si is bonded to the right bonding position and R F12 is bonded to the left bonding position, specifically, Q 11 and Q 12 should be- (CH 2 ) i1- (i1 is an integer from 1 to 5) -CH 2 O (CH 2 ) i2- (i2 is an integer of 1 ~ 4), -SO 2 NR 1- (CH 2 ) i3- (R 1 is a hydrogen atom, methyl or ethyl, i3 is 1 ~ An integer of 4 and the total number of carbon atoms of R 1 and (CH 2 ) i3 is an integer of 4 or less), or-(C = O) -NR 1- (CH 2 ) i4- (R 1 is the same as above, i4 A base represented by an integer of 1 to 4 and the total number of carbon atoms of R 1 and (CH 2 ) i4 is an integer of 4 or less). In terms of Q 11 and Q 12 ,-(CH 2 ) i1 with i1 being an integer of 2 to 4 is preferred, and- (CH 2 ) 2 -is particularly preferred.

另外,RF12為不含醚性氧原子之全氟伸烷基的情況下,Q11及Q12宜為以-(CH2)i1-表示之基。i1為2~4之整數較佳,且以2尤佳。 When R F12 is a perfluoroalkylene group having no etheric oxygen atom, Q 11 and Q 12 are preferably a group represented by- (CH 2 ) i1- . It is preferable that i1 is an integer of 2 to 4, and 2 is more preferable.

RF12為含有醚性氧原子之全氟烷基的情況下,Q11及Q12宜為以-(CH2)i1-、-CH2O(CH2)i2-、-SO2NR1-(CH2)i3-或-(C= O)-NR1-(CH2)i4-表示之基。在此情況下,Q11及Q12亦以-(CH2)i1-較佳。i1為2~4之整數更佳,且i1為2尤佳。 When R F12 is a perfluoroalkyl group containing an etheric oxygen atom, Q 11 and Q 12 are preferably-(CH 2 ) i1- , -CH 2 O (CH 2 ) i2- , -SO 2 NR 1- (CH 2 ) i3 - or- (C = O) -NR 1- (CH 2 ) i4- . In this case, Q 11 and Q 12 are also preferably-(CH 2 ) i1- . It is more preferable that i1 is an integer of 2 to 4, and it is more preferable that i1 is 2.

T為氟原子時,化合物(dx-1a)之具體例例如可列舉國際公開第2014/046209號之段落[0046]中所記載之物等。 When T is a fluorine atom, specific examples of the compound (dx-1a) include, for example, those described in paragraph [0046] of International Publication No. 2014/046209.

T為基(Ib)時,化合物(dx-1a)之具體例例如可列舉國際公開第2014/046209號之段落[0047]中所記載之物等。 When T is a group (Ib), specific examples of the compound (dx-1a) include, for example, those described in paragraph [0047] of International Publication No. 2014/046209.

在本發明中,就化合物(dx-1a)而言,其中又以F(CF2)6CH2CH2Si(OCH3)3或F(CF2)3OCF(CF3)CF2O(CF2)2CH2CH2Si(OCH3)3尤佳。 In the present invention, as far as the compound (dx-1a) is concerned, F (CF 2 ) 6 CH 2 CH 2 Si (OCH 3 ) 3 or F (CF 2 ) 3 OCF (CF 3 ) CF 2 O ( CF 2 ) 2 CH 2 CH 2 Si (OCH 3 ) 3 is particularly preferred.

混合物(M)中之水解性矽烷化合物(s1)之含有比率以可使該混合物或從該混合物製得之部分水解(共)縮合物中之氟原子含有率成為1~40質量%的比率為佳。該氟原子含有率較理想為5~35質量%,10~30質量%則尤為理想。水解性矽烷化合物(s1)之含有比率若在上述範圍之下限值以上,便可對硬化膜上表面賦予良好的撥墨性;若在上限值以下,與該混合物中之其他水解性矽烷化合物或負型感光性樹脂組成物中之其他成分的相溶性即佳。 The content ratio of the hydrolyzable silane compound (s1) in the mixture (M) is such that the fluorine atom content in the mixture or the partially hydrolyzed (co) condensate obtained from the mixture is 1 to 40% by mass. good. The fluorine atom content is preferably 5 to 35% by mass, and more preferably 10 to 30% by mass. If the content ratio of the hydrolyzable silane compound (s1) is above the lower limit of the above range, good ink repellency can be imparted to the upper surface of the cured film; if it is below the upper limit, it is compatible with other hydrolyzable silanes in the mixture. The compatibility of the compound or other components in the negative photosensitive resin composition is good.

<2>水解性矽烷化合物(s2) <2> Hydrolyzable Silane Compound (s2)

藉由使混合物(M)含有於矽原子鍵結有4個水解性基之水解性矽烷化合物(s2),可在使含有撥墨劑(D)之負型感光性樹脂組成物硬化而成之硬化膜中,提高撥墨劑(D)移行至上表面後的造膜性。即,吾等認為是因為水解性矽烷化 合物(s2)中之水解性基數量多,因此移行至上表面後撥墨劑(D)彼此可良好地縮合,於上表面整體形成一薄膜而成為撥墨層。 The mixture (M) contains a hydrolyzable silane compound (s2) having four hydrolyzable groups bonded to a silicon atom, thereby curing the negative photosensitive resin composition containing the ink repellent (D). In the cured film, the film forming property after the ink repellent (D) migrates to the upper surface is improved. That is, we think it is because of hydrolyzable silylation The compound (s2) has a large number of hydrolyzable groups, so the ink repellent agents (D) can condense well with each other after moving to the upper surface, and a film is formed on the entire upper surface to become an ink repellent layer.

又,藉由使混合物(M)含有水解性矽烷化合物(s2)而製成部分水解縮合物之情況下,撥墨劑(D)可輕易地溶解於烴系溶劑中。 When the partially hydrolyzed condensate is prepared by containing the hydrolyzable silane compound (s2) in the mixture (M), the ink repellent (D) can be easily dissolved in a hydrocarbon-based solvent.

水解性矽烷化合物(s2)可單獨使用1種亦可將2種以上併用。 The hydrolyzable silane compound (s2) may be used alone or in combination of two or more.

就水解性基而言,可使用與水解性矽烷化合物(s1)之水解性基相同之物。 As the hydrolyzable group, the same thing as the hydrolyzable group of the hydrolyzable silane compound (s1) can be used.

水解性矽烷化合物(s2)可以下式(dx-2)表示。 The hydrolyzable silane compound (s2) can be represented by the following formula (dx-2).

SiX2 4…(dx-2) SiX 2 4 … (dx-2)

式(dx-2)中,X2表示水解性基,4個X2可互異亦可相同。就X2來說,可使用與前述X11及X12相同之基。 In the formula (dx-2), X 2 represents a hydrolyzable group, and four X 2 may be different from each other or may be the same. As for X 2 , the same bases as X 11 and X 12 described above can be used.

就化合物(dx-2)之具體例,可列舉以下化合物。又,化合物(dx-2)可因應需求使用將其複數個、例如2~10個預先部分水解縮合而製得之部分水解縮合物。 Specific examples of the compound (dx-2) include the following compounds. In addition, the compound (dx-2) may be a partially hydrolyzed condensate prepared by subjecting a plurality of the compounds (dx-2), for example, 2 to 10, to partial partial hydrolysis and condensation in advance.

Si(OCH3)4、Si(OC2H5)4、Si(OCH3)4之部分水解縮合物或Si(OC2H5)4之部分水解縮合物。 Partially hydrolyzed condensates of Si (OCH 3 ) 4 , Si (OC 2 H 5 ) 4 , Si (OCH 3 ) 4 or partially hydrolyzed condensates of Si (OC 2 H 5 ) 4 .

相對於1莫耳之水解性矽烷化合物(s1),混合物(M)中之水解性矽烷化合物(s2)之含有比率以1~20莫耳為佳,3~18莫耳尤佳。含有比率若在上述範圍之下限值以上,撥墨劑(D)之造膜性即佳;若在上限值以下,撥墨劑(D)之撥墨性即佳。 The content ratio of the hydrolyzable silane compound (s2) in the mixture (M) is preferably 1 to 20 mol, and more preferably 3 to 18 mol relative to 1 mol of the hydrolyzable silane compound (s1). If the content ratio is above the lower limit of the above range, the film-forming property of the ink repellent (D) is better; if it is below the upper limit, the ink repellency of the ink repellent (D) is better.

<3>水解性矽烷化合物(s3) <3> Hydrolyzable Silane Compound (s3)

在上述混合物(M)中使用水解性矽烷化合物(s2)時,例如在使感光性樹脂組成物硬化而成之隔壁中,有於其上表面端部形成突起之情況。該突起係可藉由掃描型電子顯微鏡(SEM)等觀察到之程度的微小物,確認其F及/或Si之含量較其他部分更多。 When a hydrolyzable silane compound (s2) is used for the said mixture (M), a protrusion may be formed in the upper surface edge part in the partition wall which hardened the photosensitive resin composition, for example. The protrusions are minute objects that can be observed with a scanning electron microscope (SEM) or the like, and it is confirmed that the content of F and / or Si is larger than that of other parts.

上述突起作為隔壁等雖不會特別引起阻礙,但本發明人發現藉由將水解性矽烷化合物(s2)之一部分取代成水解性基之數量少的水解性矽烷化合物(s3),可抑制上述突起之產生。 Although the protrusion is not particularly obstructive as a partition wall or the like, the inventors have found that the protrusion can be suppressed by substituting a part of the hydrolyzable silane compound (s2) with a small number of hydrolyzable silane compounds (s3). To produce.

藉由以水解性基數量多的水解性矽烷化合物(s2)生成之矽烷醇基彼此的反應,可使撥墨劑(D)之造膜性增加,吾等認為就是因其高反應性而引起上述突起。爰此,吾等認為藉由將水解性矽烷化合物(s2)之一部分取代成水解性基之數量少的水解性矽烷化合物(s3),可抑制矽烷醇基彼此之反應,進而可抑制上述突起之產生。 The reaction of the silanol groups formed by the hydrolyzable silane compound (s2) with a large number of hydrolyzable groups can increase the film-forming property of the ink repellent (D), which we believe is caused by its high reactivity. The above protrusions. Therefore, we believe that by partially substituting a part of the hydrolyzable silane compound (s2) with a small number of hydrolyzable groups, the hydrolyzable silane compound (s3) can suppress the reaction of the silanol groups with each other, thereby suppressing the aforementioned protrusions. produce.

水解性矽烷化合物(s3)可單獨使用1種亦可將2種以上併用。 The hydrolyzable silane compound (s3) may be used alone or in combination of two or more.

就水解性基而言,可使用與水解性矽烷化合物(s1)之水解性基相同之物。 As the hydrolyzable group, the same thing as the hydrolyzable group of the hydrolyzable silane compound (s1) can be used.

就水解性矽烷化合物(s3)而言,以下式(dx-3)所示之化合物為佳。 The hydrolyzable silane compound (s3) is preferably a compound represented by the following formula (dx-3).

(RH5)j-SiX5 (4-j)…(dx-3) (R H5 ) j -SiX 5 (4-j) … (dx-3)

式(dx-3)中,RH5為碳原子數1~20之烴基。 In the formula (dx-3), R H5 is a hydrocarbon group having 1 to 20 carbon atoms.

X5為水解性基。 X 5 is a hydrolyzable group.

j為1~3之整數,且理想為2或3。 j is an integer from 1 to 3, and ideally is 2 or 3.

RH5有多數個存在時,該等可互異亦可相同。 When there is a plurality of R H5 , these may be different or the same.

X5有多數個存在時,該等可互異亦可相同。 When there are multiple X5s, these may be different or the same.

就RH5而言,在j為1之情況下,可列舉碳原子數1~20之脂肪族烴基或碳原子數6~10之芳香族烴基,且以碳原子數1~10之烷基、苯基等為佳。j為2或3時,RH5以碳原子數1~6之烴基為佳,且以碳原子數1~3之烴基較佳。 In the case of R H5 , when j is 1, an aliphatic hydrocarbon group having 1 to 20 carbon atoms or an aromatic hydrocarbon group having 6 to 10 carbon atoms, and an alkyl group having 1 to 10 carbon atoms, Phenyl and the like are preferred. When j is 2 or 3, R H5 is preferably a hydrocarbon group having 1 to 6 carbon atoms, and more preferably a hydrocarbon group having 1 to 3 carbon atoms.

X5可使用與前述X11及X12相同之基。 X 5 may use the same base as X 11 and X 12 described above.

化合物(dx-3)之具體例例如可列舉國際公開第2014/046209號之段落[0063]中所記載之物等。 Specific examples of the compound (dx-3) include, for example, those described in paragraph [0063] of International Publication No. 2014/046209.

相對於1莫耳之水解性矽烷化合物(s1),混合物(M)中之水解性矽烷化合物(s3)之含有比率以1~10莫耳為佳,3~8莫耳尤佳。含有比率若在上述範圍之下限值以上,便可抑制隔壁上表面之端部的突起。若在上限值以下,撥墨劑(D)之撥墨性即佳。 The content ratio of the hydrolyzable silane compound (s3) in the mixture (M) is preferably 1 to 10 mol, and more preferably 3 to 8 mol relative to 1 mol of the hydrolyzable silane compound (s1). When the content ratio is at least the lower limit of the above range, it is possible to suppress the protrusion at the end portion of the upper surface of the partition wall. If it is below the upper limit, the ink repellency of the ink repellent (D) is better.

<4>水解性矽烷化合物(s4) <4> Hydrolyzable Silane Compound (s4)

混合物(M)宜任意含有水解性矽烷化合物(s4),該水解性矽烷化合物(s4)具有陽離子聚合性基及水解性基且不含氟原子。藉由使混合物(M)含有水解性矽烷化合物(s4),可透過陽離子聚合性基與例如感光性樹脂組成物所含之交聯劑(B)反應而獲得提高撥墨層中之撥墨劑(D)之固著性的效果。 The mixture (M) preferably contains a hydrolyzable silane compound (s4), which has a cationic polymerizable group and a hydrolyzable group and does not contain a fluorine atom. When the mixture (M) contains a hydrolyzable silane compound (s4), a cationic polymerizable group can be reacted with a crosslinking agent (B) contained in, for example, a photosensitive resin composition to obtain an ink repellent agent for improving the ink repellent layer. (D) Effect of fixing property.

就水解性矽烷化合物(s4)來說,以下式(dx-4)所 示之化合物為佳。 The hydrolyzable silane compound (s4) is represented by the following formula (dx-4) The compounds shown are preferred.

(E-Q6)s-Si(RH6)tX6 (4-s-t)…(dx-4) (EQ 6 ) s -Si (R H6 ) t X 6 (4-st) … (dx-4)

式(dx-4)中,E為陽離子聚合性基,例如氧雜環丁烷基、環氧基、環氧丙氧基或3,4-環氧環己基。 In formula (dx-4), E is a cationic polymerizable group, for example, an oxetanyl group, an epoxy group, an propylene oxide group, or a 3,4-epoxycyclohexyl group.

Q6為碳原子數1~10且不含氟原子之2價有機基。 Q 6 is a divalent organic group having 1 to 10 carbon atoms and not containing a fluorine atom.

RH6為碳原子數1~6之烴基。 R H6 is a hydrocarbon group having 1 to 6 carbon atoms.

X6為水解性基。 X 6 is a hydrolyzable group.

s為1或2,t為0或1,s+t為1或2。 s is 1 or 2, t is 0 or 1, and s + t is 1 or 2.

E-Q6有多數個存在時,該等可互異亦可相同。 When there are multiple EQ 6 , these can be different or the same.

X6有多數個存在時,該等可互異亦可相同。 When there is a plurality of X 6 , these may be different or the same.

X6可使用與前述X11及X12相同之基。 X 6 may use the same base as X 11 and X 12 described above.

Q6以碳原子數1~10之伸烷基為佳,碳原子數1~5之伸烷基較佳,且以碳原子數1~3之伸烷基尤佳。 Q 6 is preferably an alkylene group having 1 to 10 carbon atoms, an alkylene group having 1 to 5 carbon atoms is preferred, and an alkylene group having 1 to 3 carbon atoms is particularly preferred.

就RH6而言,可使用與前述RH11及RH12相同之基。 As for R H6 , the same groups as those of the aforementioned R H11 and R H12 can be used.

化合物(dx-4)之具體例可列舉E-(CH2)2-Si(OCH3)3、E-(CH2)3-Si(OCH3)3、E-(CH2)3-Si(OCH2CH3)3、E-(CH2)3-Si(CH3)(OCH2CH3)2等。該等中又以2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-環氧丙氧基丙基三甲氧基矽烷、3-環氧丙氧基丙基三乙氧矽烷、3-環氧丙氧基丙基甲基二乙氧矽烷等為佳。 Specific examples of the compound (dx-4) include E- (CH 2 ) 2 -Si (OCH 3 ) 3 , E- (CH 2 ) 3 -Si (OCH 3 ) 3 , and E- (CH 2 ) 3 -Si (OCH 2 CH 3 ) 3 , E- (CH 2 ) 3 -Si (CH 3 ) (OCH 2 CH 3 ) 2 and the like. 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxy Silane and 3-glycidoxypropylmethyldiethoxysilane are preferred.

相對於混合物(M)之總量,混合物(M)中之水解性矽烷化合物(s4)之含量以0~99莫耳%為佳,15~80莫耳%較佳,15~50莫耳%尤佳。水解性矽烷化合物(s4)可單獨使用1種亦可將2種以上併用。 The content of the hydrolyzable silane compound (s4) in the mixture (M) is preferably 0 to 99 mol%, more preferably 15 to 80 mol%, and 15 to 50 mol% relative to the total amount of the mixture (M). It's better. The hydrolyzable silane compound (s4) may be used alone or in combination of two or more.

<5>其他水解性矽烷化合物 <5> Other hydrolyzable silane compounds

在不損及本發明效果之範圍內,混合物(M)更可含有水解性矽烷化合物(s1)~(s4)以外之水解性矽烷化合物1種或2種以上。相對於混合物(M)之總量,混合物(M)中之其他水解性矽烷化合物含量合計在40莫耳%以下為佳,在10莫耳%以下較佳。 As long as the effect of the present invention is not impaired, the mixture (M) may further contain one or two or more kinds of hydrolyzable silane compounds other than the hydrolyzable silane compounds (s1) to (s4). Relative to the total amount of the mixture (M), the total content of other hydrolyzable silane compounds in the mixture (M) is preferably 40 mol% or less, and more preferably 10 mol% or less.

就其他水解性矽烷化合物而言,可列舉具有具乙烯性雙鍵之基與水解性基且不含氟原子之水解性矽烷化合物、具有巰基與水解性基且不含氟原子之水解性矽烷化合物、具有氧伸烷基與水解性基且不含氟原子之水解性矽烷化合物、具有胺基或異氰酸酯基與水解性基且不含氟原子之水解性矽烷化合物等。 Examples of other hydrolyzable silane compounds include hydrolyzable silane compounds having a vinyl double bond and a hydrolyzable group and containing no fluorine atom, and hydrolyzable silane compounds having a mercapto group and a hydrolyzable group and containing no fluorine atom. A hydrolyzable silane compound having an oxyalkylene group and a hydrolyzable group and containing no fluorine atom, a hydrolyzable silane compound having an amine group or an isocyanate group and a hydrolyzable group and containing no fluorine atom, and the like.

具有具乙烯性雙鍵之基與水解性基且不含氟原子之水解性矽烷化合物之具體例,例如可列舉國際公開第2014/046209號之段落[0057]中所記載之物等。 Specific examples of the hydrolyzable silane compound having a group having an ethylenic double bond and a hydrolyzable group and not containing a fluorine atom include, for example, those described in paragraph [0057] of International Publication No. 2014/046209.

具有巰基與水解性基且不含氟原子之水解性矽烷化合物之具體例,可列舉HS-(CH2)3-Si(OCH3)3、HS-(CH2)3-Si(CH3)(OCH3)2等。 Specific examples of the hydrolyzable silane compound having a mercapto group and a hydrolyzable group and not containing a fluorine atom include HS- (CH 2 ) 3 -Si (OCH 3 ) 3 and HS- (CH 2 ) 3 -Si (CH 3 ) (OCH 3 ) 2 and so on.

具有氧伸烷基與水解性基且不含氟原子之水解性矽烷化合物之具體例,可舉如CH3O(C2H4O)kSi(OCH3)3(含聚氧伸乙基之三甲氧基矽烷)(例如,k約為10)等。 Specific examples of the hydrolyzable silane compound having an oxyalkylene group and a hydrolyzable group and not containing a fluorine atom include, for example, CH 3 O (C 2 H 4 O) k Si (OCH 3 ) 3 (containing polyoxyethylene Trimethoxysilane) (for example, k is about 10) and the like.

具有胺基與水解性基且不含氟原子之水解性矽烷化合物,可舉例如C6H5NH(CH2)3Si(OCH3)3(苯基胺基丙基三甲氧基矽烷)等。 Examples of the hydrolyzable silane compound having an amine group and a hydrolyzable group and not containing a fluorine atom include C 6 H 5 NH (CH 2 ) 3 Si (OCH 3 ) 3 (phenylaminopropyltrimethoxysilane). .

具有異氰酸酯基與水解性基且不含氟原子之水解性矽烷化合物,可舉例如NCO(CH2)3Si(OC2H5)3(異氰酸酯丙基三乙氧矽烷)等。 Examples of the hydrolyzable silane compound having an isocyanate group and a hydrolyzable group and not containing a fluorine atom include NCO (CH 2 ) 3 Si (OC 2 H 5 ) 3 (isocyanatepropyltriethoxysilane).

<6>撥墨劑(D) <6> Ink Repellent (D)

撥墨劑(D)為混合物(M)或其部分水解(共)縮合物。 The ink repellent (D) is a mixture (M) or a partially hydrolyzed (co) condensate thereof.

就撥墨劑(D)之一例來說,可舉如含有化合物(dx-1a)作為必須成分、含有化合物(dx-2)及化合物(dx-4)作為任意成分且化合物(dx-1a)中之基T為氟原子的混合物(M)。各化合物之含量宜如同上述。 As an example of the ink repellent (D), for example, the compound (dx-1a) is contained as an essential component, the compound (dx-2) and the compound (dx-4) are contained as an optional component, and the compound (dx-1a) The group T is a mixture (M) of fluorine atoms. The content of each compound is preferably as described above.

使撥墨劑(D)以如上所述混合物(M)之形態含於負型感光性樹脂組成物中時,可省略預先將撥墨劑(D)部分水解縮合之步驟,在生產性方面相當有利。此外,在負型感光性樹脂組成物之貯藏穩定性方面亦佳。 When the ink-repellent agent (D) is contained in the negative photosensitive resin composition in the form of the mixture (M) as described above, the step of partially hydrolyzing and condensing the ink-repellent agent (D) in advance can be omitted, which is equivalent in productivity. advantageous. Moreover, it is also excellent in the storage stability of a negative photosensitive resin composition.

於下式(II)顯示撥墨劑(D1)的平均組成式作為撥墨劑(D)之另一例,撥墨劑(D1)係混合物(M)之部分水解縮合物,該混合物(M)含有化合物(dx-1a)作為必須成分,含有化合物(dx-2)及化合物(dx-3)作為任意成分且化合物(dx-1a)中之基T為氟原子。作為撥墨劑(D)若使用部分水解縮合物,在可減低負型感光性樹脂組成物之顯影去除部(開口部)中之殘渣方面相當有利。 The average composition formula of the ink repellent (D1) is shown in the following formula (II). As another example of the ink repellent (D), the ink repellent (D1) is a partially hydrolyzed condensate of the mixture (M), and the mixture (M) The compound (dx-1a) is contained as an essential component, the compound (dx-2) and the compound (dx-3) are contained as optional components, and the group T in the compound (dx-1a) is a fluorine atom. If a partially hydrolyzed condensate is used as the ink repellent (D), it is very advantageous in terms of reducing residues in the development removal section (opening section) of the negative photosensitive resin composition.

[T-RF12-Q11-SiO3/2]n1.[SiO2]n2.[(RH5)j-SiO(4-j)/2]n3…(II) [TR F12 -Q 11 -SiO 3/2 ] n1 . [SiO 2 ] n2 . [(R H5 ) j -SiO (4-j) / 2 ] n3 … (II)

式(II)中,n1~n3係表示相對於構成單元之合計莫耳量而言各構成單元之莫耳分率。n1>0、n2≧0、n3≧0且 n1+n2+n3=1。其他各符號則如同上述。惟,T為氟原子。 In Formula (II), n1 to n3 represent the mole fractions of each constituent unit with respect to the total mole amount of the constituent units. n1> 0, n2 ≧ 0, n3 ≧ 0, and n1 + n2 + n3 = 1. The other symbols are as described above. However, T is a fluorine atom.

另外,撥墨劑(D1)實際為水解性基或矽烷醇基殘存之生成物(部分水解縮合物),因此很難以化學式表示該生成物。 In addition, since the ink repellent (D1) is actually a product (partially hydrolyzed condensate) remaining from a hydrolyzable group or a silanol group, it is difficult to express the product by a chemical formula.

式(II)所示之平均組成式係假設撥墨劑(D1)中水解性基或矽烷醇基全部成為矽氧烷鍵時的化學式。 The average composition formula represented by the formula (II) is a chemical formula when all the hydrolyzable groups or silanol groups in the ink repellent (D1) become siloxane bonds.

又,吾等推測式(II)中分別源自化合物(dx-1a)、(dx-2)及(dx-3)之單元係呈無規配列。 In addition, we speculate that the units derived from compounds (dx-1a), (dx-2), and (dx-3) in formula (II) are randomly arranged.

式(II)所示之平均組成式中之n1:n2:n3與混合物(M)中之化合物(dx-1a)、(dx-2)及(dx-3)的饋入組成一致。 In the average composition formula represented by formula (II), n1: n2: n3 is consistent with the feed composition of the compounds (dx-1a), (dx-2), and (dx-3) in the mixture (M).

各成分之莫耳比宜從各成分的效果平衡來設計。 The molar ratio of each component should be designed from the balance of the effects of each component.

n1就可使撥墨劑(D1)中之氟原子含有率達上述理想範圍之量而言,以0.02~0.4為佳,0.02~0.3尤佳。 In terms of n1, the amount of fluorine atom content in the ink repellent (D1) can reach the above-mentioned ideal range, preferably 0.02 to 0.4, and particularly preferably 0.02 to 0.3.

n2在n3=0之情況下以0~0.98為佳,在n3>0之情況下則以0.05~0.6為佳。 In the case of n3 = 0, 0 ~ 0.98 is preferable, and in the case of n3> 0, 0.05 ~ 0.6 is preferable.

n3以0~0.5為佳。 n3 is preferably 0 ~ 0.5.

而,在化合物(dx-1a)中之T為基(Ib)之情況下,上述各成分之理想莫耳比亦同。 Moreover, in the case where T in the compound (dx-1a) is a group (Ib), the ideal mole ratios of the aforementioned components are also the same.

又,上述各成分之理想莫耳比也同樣可適用在混合物(M)含有水解性矽烷化合物(s1)且任意含有水解性矽烷化合物(s2)及水解性矽烷化合物(s3)之情況。即,用以獲得撥墨劑(D)之混合物(M)中的水解性矽烷化合物(s1)~(s3)之理想饋入量分別相當於上述n1~n3的理想範圍。 The ideal molar ratio of each of the components described above is also applicable when the mixture (M) contains a hydrolyzable silane compound (s1) and optionally contains a hydrolyzable silane compound (s2) and a hydrolyzable silane compound (s3). That is, the ideal feeding amounts for obtaining the hydrolyzable silane compounds (s1) to (s3) in the mixture (M) of the ink repellent (D) correspond to the above-mentioned ideal ranges of n1 to n3, respectively.

令撥墨劑(D)為混合物(M)之部分水解縮合物時 的數量平均分子量(Mn)以500以上為佳,且以低於1,000,000為佳,低於10,000尤佳。 When the ink repellent (D) is a partially hydrolyzed condensate of the mixture (M) The number average molecular weight (Mn) is preferably 500 or more, more preferably less than 1,000,000, and most preferably less than 10,000.

數量平均分子量(Mn)若在上述下限值以上,使用感光性樹脂組成物形成隔壁時,撥墨劑(D)便容易移行至上表面。若低於上述上限值,撥墨劑(D)於溶劑中之溶解性即佳。 When the number average molecular weight (Mn) is at least the above-mentioned lower limit value, when the photosensitive resin composition is used to form the partition wall, the ink repellent (D) will easily migrate to the upper surface. If it is lower than the above upper limit, the solubility of the ink repellent (D) in the solvent is better.

撥墨劑(D)之數量平均分子量(Mn)可依製造條件調節。 The number average molecular weight (Mn) of the ink repellent (D) can be adjusted according to manufacturing conditions.

撥墨劑(D)可藉由公知方法使上述混合物(M)進行水解及縮合反應來製造。 The ink repellent (D) can be produced by subjecting the mixture (M) to a hydrolysis and condensation reaction by a known method.

於上述反應宜使用一般使用之鹽酸、硫酸、硝酸、磷酸等無機酸或是乙酸、草酸、馬來酸等有機酸作為觸媒。 又,因應需求亦可使用氫氧化鈉、四甲基氫氧化銨(TMAH)等鹼觸媒。 In the above reaction, inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid, or organic acids such as acetic acid, oxalic acid, and maleic acid are preferably used as catalysts. In addition, alkali catalysts such as sodium hydroxide and tetramethylammonium hydroxide (TMAH) can be used according to demand.

於上述反應可使用公知溶劑。 A well-known solvent can be used for the said reaction.

以上述反應所得之撥墨劑(D)亦可與溶劑一起以溶液之性狀摻混於感光性樹脂組成物。 The ink repellent (D) obtained by the above reaction may be blended with the solvent in the form of a solution together with the photosensitive resin composition.

相對於100質量份之鹼可溶性樹脂(A),撥墨劑(D)之含量以0.01~20質量份為佳,0.1~10質量份較佳,0.2~3質量份尤佳。藉由使撥墨劑(D)之含量在上述範圍,可製得上表面具有充分撥墨性的隔壁。 The content of the ink repellent (D) is preferably 0.01 to 20 parts by mass relative to 100 parts by mass of the alkali-soluble resin (A), more preferably 0.1 to 10 parts by mass, and even more preferably 0.2 to 3 parts by mass. When the content of the ink repellent (D) is in the above range, a partition wall having sufficient ink repellency on the upper surface can be obtained.

(溶劑(E)) (Solvent (E))

本發明之負型感光性樹脂組成物因含有溶劑(E)而減低黏度,故可輕易地將負型感光性樹脂組成物塗佈於基材 表面。其結果可形成均勻膜厚的負型感光性樹脂組成物之塗膜。 Since the negative photosensitive resin composition of the present invention contains a solvent (E), the viscosity is reduced, so the negative photosensitive resin composition can be easily applied to a substrate. surface. As a result, a coating film of a negative photosensitive resin composition having a uniform film thickness can be formed.

溶劑(E)可使用公知溶劑。溶劑(E)可單獨使用1種亦可將2種以上併用。 As the solvent (E), a known solvent can be used. The solvent (E) may be used alone or in combination of two or more.

就溶劑(E)而言,可列舉伸烷基二醇烷基醚類、伸烷基二醇烷基醚乙酸酯類、醇類、溶劑油類等。其中,又以選自於由伸烷基二醇烷基醚類、伸烷基二醇烷基醚乙酸酯類及醇類所構成群組中之至少1種溶劑為佳,且以選自於由丙二醇單甲基醚乙酸酯、丙二醇單甲基醚、二乙二醇乙基甲基醚、二乙二醇單乙基醚乙酸酯及2-丙醇所構成群組中之至少1種溶劑更佳。 Examples of the solvent (E) include alkylene glycol alkyl ethers, alkylene glycol alkyl ether acetates, alcohols, and solvent oils. Among them, at least one solvent selected from the group consisting of alkylene glycol alkyl ethers, alkylene glycol alkyl ether acetates, and alcohols is preferred, and at least one solvent is selected from At least one of the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, and 2-propanol Solvents are better.

相對於組成物總量,負型感光性樹脂組成物中之溶劑(E)之含有比率以50~99質量%為佳,60~95質量%較佳,65~90質量%尤佳。 The content of the solvent (E) in the negative photosensitive resin composition is preferably 50 to 99% by mass, more preferably 60 to 95% by mass, and even more preferably 65 to 90% by mass with respect to the total amount of the composition.

(其他成分) (Other ingredients)

本發明中之負型感光性樹脂組成物更可因應需求含有1種或2種以上之著色劑、熱交聯劑、高分子分散劑、分散助劑、矽烷耦合劑、微粒子、硬化促進劑、增稠劑、可塑劑、消泡劑、調平劑、抗收縮劑等其他添加劑。 The negative photosensitive resin composition in the present invention may contain one or more coloring agents, thermal cross-linking agents, polymer dispersants, dispersing aids, silane coupling agents, fine particles, hardening accelerators, Thickener, plasticizer, defoamer, leveling agent, anti-shrinking agent and other additives.

本發明之負型感光性樹脂組成物係將上述各成分之預定量混合而製得。本發明之負型感光性樹脂組成物具有良好的貯藏穩定性。 The negative-type photosensitive resin composition of the present invention is prepared by mixing predetermined amounts of the aforementioned components. The negative photosensitive resin composition of the present invention has good storage stability.

又,使用本發明之負型感光性樹脂組成物,即可在低曝光量下製造上表面具有具良好撥墨性之撥墨層的隔壁。 此外,可製造該撥墨層即便經紫外線/臭氧洗淨處理等親墨化處理仍可保持優異的撥墨性之隔壁。 Moreover, by using the negative photosensitive resin composition of the present invention, a partition wall having an ink repellent layer having a good ink repellent property on the upper surface can be manufactured at a low exposure. In addition, it is possible to manufacture a partition wall that can maintain excellent ink repellency even if the ink repellent layer is subjected to an ink-receptive treatment such as ultraviolet / ozone cleaning treatment.

可藉由本發明製造之隔壁具有上表面具充分撥墨性之撥墨層,並可形成微細且精度高的圖案。 The partition wall which can be manufactured by the present invention has an ink repellent layer with sufficient ink repellency on the upper surface, and can form a fine and highly accurate pattern.

依據本發明,可提供一種光學元件,其具有點,該點係於隔壁所劃分之開口部均勻塗佈印墨而精確形成,而該光學元件具體而言為有機EL元件、量子點顯示器、TFT陣列、薄膜太陽電池等。 According to the present invention, there can be provided an optical element having dots, which are accurately formed by uniformly coating ink on an opening portion divided by a partition wall, and the optical element is specifically an organic EL element, a quantum dot display, a TFT Arrays, thin-film solar cells, etc.

[隔壁] [next door]

本發明之隔壁係形成為將基板表面劃分成多數個點形成用分區之形狀,且由上述負型感光性樹脂組成物之硬化物所構成。該隔壁例如可將本發明之負型感光性樹脂組成物塗佈於基板等之基材表面,並因應需求進行乾燥去除溶劑等以後,對成為點形成用分區之部分施加遮罩並進行曝光後,因應需求進行加熱、顯影而製得。 The partition wall of the present invention is formed in a shape that divides the surface of the substrate into a plurality of dot-forming sections, and is composed of a hardened body of the negative photosensitive resin composition. This partition can be, for example, coated with the negative photosensitive resin composition of the present invention on the surface of a substrate such as a substrate, dried and removed the solvent, etc. as needed, and then masked and exposed to the portion that becomes the zone for dot formation. It can be made by heating and developing according to demand.

以下,利用圖1A~1D來說明本發明之實施形態之隔壁製造方法之一例,惟隔壁之製造方法不受以下限定。而,以下之製造方法係以負型感光性樹脂組成物含有溶劑(E)者作說明。 Hereinafter, an example of a method for manufacturing a partition wall according to an embodiment of the present invention will be described with reference to FIGS. 1A to 1D. However, the method for manufacturing a partition wall is not limited to the following. The following production method will be described with reference to a case where the negative photosensitive resin composition contains a solvent (E).

如圖1A所示,於基板1之一主面整體塗佈負型感光性樹脂組成物,形成塗膜21。此時,撥墨劑(D)會整個溶解且均勻分散於塗膜21中。撥墨劑(D)可為含有水解性矽烷化合物(s1)之水解性矽烷化合物的混合物(M),亦可為該等之部分水解(共)縮合物。而,圖1A中,撥墨劑(D) 為示意顯示,實際上並非以這種粒子形狀存在。 As shown in FIG. 1A, a negative photosensitive resin composition is entirely applied to one main surface of the substrate 1 to form a coating film 21. At this time, the ink repellent (D) is completely dissolved and uniformly dispersed in the coating film 21. The ink repellent (D) may be a mixture (M) of a hydrolyzable silane compound containing a hydrolyzable silane compound (s1), or may be a partially hydrolyzed (co) condensate thereof. However, in FIG. 1A, the ink repellent (D) For the sake of illustration, this particle shape does not actually exist.

接下來如圖1B所示,使塗膜21乾燥,製成乾燥膜22。乾燥方法可列舉加熱乾燥、減壓乾燥、減壓加熱乾燥等。雖亦依溶劑(E)之種類而異,但在加熱乾燥之情況下,加熱溫度以50~120℃為佳,90~115℃較佳。 Next, as shown in FIG. 1B, the coating film 21 is dried to form a dry film 22. Examples of the drying method include heat drying, reduced pressure drying, and reduced pressure heat drying. Although it also varies depending on the type of the solvent (E), in the case of heating and drying, the heating temperature is preferably 50 to 120 ° C, and more preferably 90 to 115 ° C.

在此乾燥過程中,撥墨劑(D)會移行至乾燥膜之上層部。而,即使負型感光性樹脂組成物不含溶劑(E),塗膜內還是同樣可達成撥墨劑(D)之上表面移行。 During this drying process, the ink repellent (D) will migrate to the upper part of the drying film. In addition, even if the negative photosensitive resin composition does not contain the solvent (E), the upper surface of the ink repellent (D) can still be shifted in the coating film.

接著如圖1C所示,隔著光罩30對乾燥膜22照射活性光線,進行曝光,該光罩30具有相當於隔壁所圍成之開口部形狀的遮罩部31。使乾燥膜22曝光後之膜稱為曝光膜23。在曝光膜23中,曝光部23A業經光硬化,非曝光部23B則與乾燥膜22為相同狀態。曝光係使乾燥膜22吸收活性光線,讓光酸產生劑(C)分解產生酸來進行。藉由產生之酸,會進行鹼可溶性樹脂(A)與交聯劑(B)鍵結之反應,同時進行撥墨劑(D)之水解縮合所致之硬化反應。 Next, as shown in FIG. 1C, the dry film 22 is irradiated with active light through a photomask 30, and the photomask 30 has a mask portion 31 corresponding to the shape of an opening portion surrounded by the partition wall. The film after exposing the dry film 22 is referred to as an exposure film 23. In the exposure film 23, the exposed portion 23A is subjected to light curing, and the non-exposed portion 23B is in the same state as the dry film 22. The exposure is performed by causing the dry film 22 to absorb active light and decomposing the photoacid generator (C) to generate an acid. With the generated acid, the reaction between the alkali-soluble resin (A) and the cross-linking agent (B) is bonded, and at the same time, the hardening reaction caused by the hydrolysis and condensation of the ink repellent (D) is performed.

就照射之光來說,可列舉可見光;紫外線;遠紫外線;KrF準分子雷射光、ArF準分子雷射光、F2準分子雷射光、Kr2準分子雷射光、KrAr準分子雷射光及Ar2準分子雷射光等準分子雷射光;X射線;電子射線等。 As for the irradiated light, visible light; ultraviolet light; far ultraviolet light; KrF excimer laser light, ArF excimer laser light, F 2 excimer laser light, Kr 2 excimer laser light, KrAr excimer laser light, and Ar 2 Excimer laser light and other excimer laser light; X-rays; electron rays and so on.

照射之光以波長100~600nm之光為佳,300~500nm之光較佳,且以含有i線(365nm)、h線(405nm)或g線(436nm)之光尤佳。又,亦可因應需求截去330nm以下之光。 The light to be irradiated is preferably light having a wavelength of 100 to 600 nm, light of 300 to 500 nm is more preferable, and light containing i-line (365 nm), h-line (405 nm) or g-line (436 nm) is particularly preferable. It is also possible to cut off light below 330 nm according to requirements.

就曝光方式來說,可列舉整面齊一曝光、掃描 曝光等。亦可對同一處分數次進行曝光。此時,數次之曝光條件可相同亦可不同。 As for the exposure method, the whole surface can be uniformly exposed and scanned. Exposure, etc. You can also expose the same spot several times. At this time, the exposure conditions for several times may be the same or different.

曝光量在上述任一曝光方式中均以例如5~1,000mJ/cm2為佳,5~500mJ/cm2較佳,5~300mJ/cm2更佳,5~200mJ/cm2尤佳,且以5~50mJ/cm2最佳。而,曝光量可依照射之光波長、負型感光性樹脂組成物之組成、塗膜厚度等適當最佳化。在本發明之負型感光性樹脂組成物中,可在此種低曝光量下進行充分的硬化。 The exposure amount in any of the above exposure methods is preferably 5 to 1,000 mJ / cm 2, more preferably 5 to 500 mJ / cm 2, more preferably 5 to 300 mJ / cm 2, and most preferably 5 to 200 mJ / cm 2 , and The best is 5 ~ 50mJ / cm 2 . The exposure amount can be appropriately optimized in accordance with the wavelength of light emitted, the composition of the negative photosensitive resin composition, and the thickness of the coating film. In the negative photosensitive resin composition of the present invention, sufficient curing can be performed at such a low exposure amount.

每單位面積之曝光時間並無特別限制,可從使用之曝光裝置之曝光功率及所需曝光量等來設計。而,若為掃描曝光,則可從光之掃描速度求得曝光時間。 There is no particular limitation on the exposure time per unit area, and it can be designed from the exposure power and required exposure amount of the exposure device used. In the case of scanning exposure, the exposure time can be obtained from the scanning speed of light.

每單位面積之曝光時間通常為1~60秒鐘程度,理想為1~30秒。 The exposure time per unit area is usually about 1 to 60 seconds, ideally 1 to 30 seconds.

曝光後,使光酸產生劑(C)分解而產生之酸擴散於乾燥膜22中,為在該膜內使反應均勻進行亦可進行加熱。加熱條件為70~120℃,理想為90~115℃,並進行1~5分鐘左右,理想為1~3分鐘。 After the exposure, the acid generated by decomposing the photoacid generator (C) is diffused in the dry film 22, and heating may be performed in order to make the reaction uniform in the film. The heating conditions are 70 to 120 ° C, preferably 90 to 115 ° C, and the heating is performed for about 1 to 5 minutes, and preferably 1 to 3 minutes.

接下來如圖1D所示,使用鹼顯影液進行顯影,而形成僅由與曝光膜23之曝光部23A相對應之部位構成的隔壁4。隔壁4所圍成之開口部5為曝光膜23中原本非曝光部23B存在的部位。圖1D係顯示藉由顯影去除非曝光部23B後之狀態。如同上述說明,非曝光部23B係在撥墨劑(D)移行至上層部且其以下之層幾乎無撥墨劑(D)存在之狀態下,被鹼顯影液溶解、去除,因此於開口部5幾乎不會 殘存撥墨劑(D)。 Next, as shown in FIG. 1D, development is performed using an alkali developing solution to form a partition wall 4 composed of only a portion corresponding to the exposure portion 23A of the exposure film 23. The opening portion 5 surrounded by the partition wall 4 is a portion of the exposure film 23 where the non-exposure portion 23B originally exists. FIG. 1D shows a state after the non-exposed portion 23B is removed by development. As described above, the non-exposed portion 23B is dissolved and removed by the alkali developing solution in a state where the ink repellent (D) moves to the upper layer portion and there is almost no ink repellent (D) in the layer below it. 5 almost never Residual ink repellent (D).

而,在圖1D所示之隔壁4中,包含其上表面之最上層為撥墨層4A。曝光時,以高濃度存在於最上層之撥墨劑(D)經光酸產生劑(C)產生之酸作為觸媒產生硬化而成為撥墨層。又,曝光時,存在於撥墨劑(D)周邊之鹼可溶性樹脂(A)與交聯劑(B)以及其以外的光硬化成分亦會堅固地光硬化而與撥墨劑(D)一起固著於撥墨層。 In addition, in the partition wall 4 shown in FIG. 1D, the uppermost layer including the upper surface thereof is an ink repellent layer 4A. During exposure, the ink repellent (D) present in the upper layer at a high concentration is hardened by the acid generated by the photoacid generator (C) as a catalyst to become the ink repellent layer. In addition, during exposure, the alkali-soluble resin (A) and the cross-linking agent (B) and other light-hardening components existing around the ink-repellent agent (D) are also strongly light-hardened together with the ink-repellent agent (D). Fixed to the ink repellent layer.

此外,在撥墨劑(D)含有水解性矽烷化合物(s4)之情況下,撥墨劑(D)會彼此鍵結,同時鹼可溶性樹脂(A)與交聯劑(B)以及其以外之光硬化成分會一起光硬化而形成撥墨劑(D)堅固鍵結而成的撥墨層4A。 In addition, when the ink repellent (D) contains a hydrolyzable silane compound (s4), the ink repellent (D) is bonded to each other, and the alkali-soluble resin (A) and the cross-linking agent (B) and others The light-hardening component will be light-hardened together to form the ink-repellent layer 4A formed by the strong bonding of the ink-repellent agent (D).

不論在上述任何情況,於撥墨層4A之下側均會形成一層4B,其主要是鹼可溶性樹脂(A)與交聯劑(B)及其以外之光硬化成分經光硬化而成且幾乎不含有撥墨劑(D)。 In any of the above cases, a layer 4B will be formed on the lower side of the ink repellent layer 4A. The layer 4B is mainly an alkali-soluble resin (A), a crosslinking agent (B) and other light-hardening components. Does not contain ink repellent (D).

如此一來,因為撥墨劑(D)充分地固著於包含撥墨層4A及下部層4B之隔壁,因此在顯影時幾乎不會轉移至開口部。 In this way, since the ink repellent (D) is sufficiently fixed to the partition wall including the ink repellent layer 4A and the lower layer 4B, it is hardly transferred to the opening portion during development.

顯影後,可將隔壁4進一步加熱。加熱溫度以130~250℃為佳,150~230℃更佳,加熱時間為20~60分鐘左右,理想為30~60分鐘。 After the development, the partition wall 4 may be further heated. The heating temperature is preferably 130 to 250 ° C, and more preferably 150 to 230 ° C. The heating time is about 20 to 60 minutes, and ideally 30 to 60 minutes.

藉由加熱可使隔壁4之硬化更為堅固,讓撥墨劑(D)更堅固地固著於撥墨層4A內。 The hardening of the partition wall 4 can be made stronger by heating, and the ink repellent agent (D) can be more firmly fixed in the ink repellent layer 4A.

以上述方式製得之本發明之樹脂硬化膜及隔壁 4,即使是在低曝光量下進行曝光,上表面仍具有良好的撥墨性。又,在隔壁4中,顯影後開口部5幾乎不會存有撥墨劑(D),可充分確保開口部5中之印墨的均勻塗敷性。 The resin hardened film and partition wall of the present invention obtained in the above manner 4. Even at low exposure, the upper surface still has good ink repellency. In addition, in the partition wall 4, the ink repellent (D) is hardly stored in the opening portion 5 after development, and the uniform coating property of the ink in the opening portion 5 can be sufficiently ensured.

另外,在更確實獲得開口部5之親墨性之目的下,加熱後為了去除可能存在於開口部5之負型感光性樹脂組成物的顯影殘渣等,可對附隔壁4之基板1施行紫外線/臭氧處理。此時,使用本發明之負型感光性樹脂組成物而製得之隔壁上部的撥墨層為對紫外線/臭氧處理具有充分耐性者。 In addition, in order to more surely obtain the ink affinity of the opening 5, ultraviolet rays may be applied to the substrate 1 with the partition wall 4 to remove the development residues of the negative photosensitive resin composition that may exist in the opening 5 after heating. / Ozone treatment. At this time, the ink-repellent layer on the upper part of the partition wall prepared by using the negative photosensitive resin composition of the present invention is one having sufficient resistance to ultraviolet / ozone treatment.

由本發明之負型感光性樹脂組成物形成之隔壁(以下亦稱本發明之隔壁)例如以寬在100μm以下為佳,在20μm以下尤佳。通常,寬在5μm以上為佳。又,相鄰之隔壁間之距離(圖案寬度)在300μm以下為佳,在100μm以下尤佳。通常,相鄰之隔壁間之距離(圖案寬度)在10μm以上為佳。 The partition wall made of the negative photosensitive resin composition of the present invention (hereinafter also referred to as the partition wall of the present invention) is preferably, for example, 100 μm or less in width, and more preferably 20 μm or less. Generally, the width is preferably 5 μm or more. The distance (pattern width) between adjacent partition walls is preferably 300 μm or less, and more preferably 100 μm or less. Generally, the distance (pattern width) between adjacent partition walls is preferably 10 μm or more.

隔壁高度以0.05~50μm為佳,且以0.2~10μm尤佳。 The height of the partition wall is preferably 0.05 to 50 μm, and particularly preferably 0.2 to 10 μm.

本發明之隔壁在形成為上述寬度時邊緣部分少有凹凸,直線性佳,可形成此種精度高之圖案,由此來看,尤有用於作為有機EL元件用隔壁。 When the partition wall of the present invention is formed to have the above-mentioned width, the edge portion has few irregularities, and the linearity is good. Such a highly accurate pattern can be formed. From this viewpoint, it is particularly useful as a partition wall for an organic EL element.

在藉由IJ法(噴墨法)進行圖案印刷時,本發明之隔壁可作為將其開口部當作印墨注入區域之隔壁加以利用。以IJ法進行圖案印刷時,若將本發明之隔壁形成為使其開口部與期望之印墨注入區域一致來作使用,隔壁上表 面便具有良好的撥墨性,由此來看,可抑制印墨超過隔壁注入到非期望之開口部即印墨注入區域。又,隔壁所圍成之開口部因為印墨之濕潤擴散性良好,所以可均勻地將印墨印刷至期望區域中而無空白等產生。 When pattern printing is performed by the IJ method (inkjet method), the partition wall of the present invention can be used as a partition wall in which the opening portion is used as a printing ink injection area. When pattern printing is performed by the IJ method, if the partition wall of the present invention is formed so that its opening is consistent with the desired ink injection area for use, The surface has good ink repellency. From this point of view, it is possible to prevent the ink from being injected into the undesired opening, that is, the ink injection area, beyond the partition wall. In addition, since the opening portion surrounded by the partition wall has good wet diffusion properties of the printing ink, the printing ink can be uniformly printed in a desired area without generation of a blank or the like.

如同上述,使用本發明之隔壁可精巧地進行利用IJ法之圖案印刷。因此,本發明之隔壁可有效作為光學元件尤其是有機EL元件、量子點顯示器、TFT陣列等之隔壁使用,該光學元件係於可以IJ法形成點之基板表面上具有多數個點及位於相鄰之點間之隔壁。 As described above, the use of the partition wall of the present invention allows delicate pattern printing using the IJ method. Therefore, the partition wall of the present invention can be effectively used as a partition wall for optical elements, especially organic EL elements, quantum dot displays, TFT arrays, etc. The optical element has a plurality of dots on the surface of a substrate that can be formed by the IJ method and is located adjacent to each other. Next to it.

[光學元件] [Optical element]

就本發明實施形態之光學元件而言,可列舉基板表面具有多數個點及位於相鄰之點間之本發明隔壁的有機EL元件、量子點顯示器、TFT陣列或薄膜太陽電池。在上述有機EL元件、量子點顯示器、TFT陣列或薄膜太陽電池中,點以IJ法形成為佳。 The optical element according to the embodiment of the present invention includes an organic EL element, a quantum dot display, a TFT array, or a thin-film solar cell having a plurality of dots on a substrate surface and a partition wall of the present invention located between adjacent dots. In the above-mentioned organic EL element, quantum dot display, TFT array, or thin-film solar cell, the dots are preferably formed by the IJ method.

有機EL元件係以陽極及陰極包夾有機薄膜之發光層的結構,本發明之隔壁可使用在分隔有機發光層之隔壁用途、分隔有機TFT層之隔壁用途及分隔塗佈型氧化物半導體之隔壁用途等。 The organic EL element has a structure in which an anode and a cathode sandwich an organic thin-film light-emitting layer. The barrier ribs of the present invention can be used for barrier ribs that separate organic light-emitting layers, barrier ribs that separate organic TFT layers, and barrier ribs that coat oxide semiconductors Use, etc.

又,有機TFT陣列元件係多數個點配置成俯視點陣狀,於各點設置TFT作為像素電極及用以驅動像素電極之開關元件,且使用有機半導體層作為包含TFT通道層之半導體層的元件。有機TFT陣列元件例如係於有機EL元件或者是液晶元件等以TFT陣列基板來配置。 In addition, an organic TFT array element is a device in which a plurality of dots are arranged in a dot-planar shape, and TFTs are provided as pixel electrodes and switching elements for driving the pixel electrodes at each point, and an organic semiconductor layer is used as an element including a TFT channel layer as a semiconductor layer . The organic TFT array element is, for example, an organic EL element or a liquid crystal element and is arranged on a TFT array substrate.

針對本發明實施形態之光學元件、例如有機EL元件,於以下說明使用上述製得之隔壁並以IJ法於開口部形成點之例。 An optical element such as an organic EL element according to an embodiment of the present invention will be described below with an example in which dots are formed in the openings by the IJ method using the barrier ribs prepared as described above.

而,本發明實施形態之光學元件的有機EL元件等中之點形成方法不受以下限定。 However, the dot formation method in the organic EL element and the like of the optical element according to the embodiment of the present invention is not limited to the following.

圖2A及圖2B係示意表示使用圖1D所示之形成於基板1上之隔壁4來製造有機EL元件的方法。在此,基板1上之隔壁4係形成為使開口部5與欲製造之有機EL元件之點圖案一致。 2A and 2B are schematic views showing a method for manufacturing an organic EL element using the partition wall 4 formed on the substrate 1 shown in FIG. 1D. Here, the partition wall 4 on the substrate 1 is formed so that the opening portion 5 and the dot pattern of the organic EL element to be manufactured coincide with each other.

如圖2A所示,於隔壁4所圍成之開口部5從噴墨頭9滴下印墨10,於開口部5注入預定量之印墨10。就印墨來說,可配合點之功能適當選用作為有機EL元件用之公知的印墨。 As shown in FIG. 2A, the printing ink 10 is dropped from the inkjet head 9 in the opening portion 5 surrounded by the partition wall 4, and a predetermined amount of the printing ink 10 is injected into the opening portion 5. As for the printing ink, a well-known printing ink used as an organic EL element can be appropriately selected in accordance with the function of the dot.

接著,依使用之印墨10之種類,例如為了溶劑之去除或硬化而施行乾燥及/或加熱等處理,從而如圖2B所示獲得以與隔壁4相鄰之形態形成有期望之點11的有機EL元件12。 Next, depending on the type of the printing ink 10 used, for example, drying and / or heating is performed to remove or harden the solvent, so as to obtain a desired point 11 formed adjacent to the partition wall 4 as shown in FIG. 2B. Organic EL element 12.

本發明實施形態之光學元件、尤其是有機EL元件、量子點顯示器、TFT陣列或薄膜太陽電池,藉由使用本發明之隔壁,在製造過程中,可使印墨無空缺不均地均勻濕潤擴散於隔壁所劃分之開口部,藉此可具有精確形成之點。 The optical element of the embodiment of the present invention, especially an organic EL element, a quantum dot display, a TFT array, or a thin-film solar cell, can use the partition wall of the present invention to uniformly wet and spread the printing ink without gaps during the manufacturing process. In the opening portion divided by the partition wall, there can be precisely formed points.

有機EL元件例如可以下述方法製造,但不受此限。 The organic EL element can be produced, for example, by the following method, but is not limited thereto.

藉由濺鍍法等將摻錫氧化銦(ITO)等透光性電極成膜於玻璃等透光性基板上。該透光性電極可因應需求進行圖案化。 A light-transmitting electrode such as tin-doped indium oxide (ITO) is formed on a light-transmitting substrate such as glass by a sputtering method or the like. The translucent electrode can be patterned as required.

接著,使用本發明之負型感光性樹脂組成物,藉由包含塗佈、曝光及顯影之光刻法,沿著各點輪廓將隔壁形成為俯視格狀。 Next, using the negative-type photosensitive resin composition of the present invention, the partition wall is formed into a plan lattice shape along the outline of each dot by a photolithography method including coating, exposure, and development.

接下來於點內藉由IJ法分別塗佈電洞注入層、電洞輸送層、發光層、電洞阻擋層及電子注入層之材料並使該等乾燥而依序積層各層。形成於點內之有機層的種類及數量可適當設計。 Next, the materials of the hole injection layer, the hole transport layer, the light emitting layer, the hole blocking layer, and the electron injection layer were coated by the IJ method in the spots, and the layers were sequentially laminated in this order. The type and number of organic layers formed in the dots can be appropriately designed.

最後藉由蒸鍍法等形成鋁等之反射電極。 Finally, a reflective electrode such as aluminum is formed by a vapor deposition method or the like.

又,量子點顯示器例如在上述有機EL元件之製造中,除了將發光層製成量子點層以外,可以同樣的方式製造,但不受此限。 The quantum dot display can be manufactured in the same manner except that the light emitting layer is made into a quantum dot layer, for example, in the manufacture of the organic EL element, but is not limited thereto.

此外,本發明實施形態之光學元件例如亦可應用於可以下述方式製造的藍色光轉換型量子點顯示器。 The optical element according to the embodiment of the present invention can also be applied to, for example, a blue light conversion type quantum dot display that can be manufactured in the following manner.

於玻璃等透光性基板上,使用本發明之負型感光性樹脂組成物,沿著各點輪廓將隔壁形成為俯視格狀。 On a light-transmitting substrate such as glass, the partition wall is formed in a plan view lattice shape along the outline of each point using the negative photosensitive resin composition of the present invention.

接著,於點內藉由IJ法塗佈可將藍色光轉換成綠色光之奈米粒子溶液、可將藍色光轉換成紅色光之奈米粒子溶液及因應需求之藍色的彩色印墨,並使該等乾燥以製作模組。使用發出藍色之光源作為背光並將前述模組代替濾色器使用,藉此可製得顏色重現性優異的液晶顯示器。 Next, apply the nano-particle solution that can convert blue light to green light, the nano-particle solution that can convert blue light to red light, and the blue color printing ink according to demand by IJ method in the spot, and Allow these to dry to make modules. A blue light source is used as a backlight and the aforementioned module is used instead of a color filter, whereby a liquid crystal display having excellent color reproducibility can be obtained.

TFT陣列例如可以下述方式製造,但不受此限。 The TFT array can be manufactured, for example, in the following manner, but is not limited thereto.

藉由濺鍍法等將鋁或其合金等之閘極電極成膜於玻璃等透光性基板上。該閘極電極可因應需求進行圖案化。 A gate electrode such as aluminum or an alloy thereof is formed on a light-transmitting substrate such as glass by a sputtering method or the like. The gate electrode can be patterned as required.

接著,藉由電漿CVD法等形成氮化矽等閘極絕緣膜。亦可於閘極絕緣膜上形成源極電極及汲極電極。源極電極及汲極電極例如可以真空蒸鍍或濺鍍形成鋁、金、銀、銅及該等之合金等之金屬薄膜來製作。將源極電極及汲極電極圖案化之方法可舉下述手法:形成金屬薄膜以後,塗裝抗蝕劑並使其曝光及顯影,於欲形成電極之部分留下抗蝕劑,然後以磷酸或王水等去除露出之金屬,最後去除抗蝕劑。又,在形成有金等金屬薄膜之情況下亦有下述手法:預先塗裝抗蝕劑並使其曝光及顯影,於不欲形成電極之部分留下抗蝕劑後,形成金屬薄膜,然後將光阻劑連同金屬薄膜一起去除。又,亦可藉由噴墨法等手法,使用銀、銅等金屬奈米膠體等來形成源極電極及汲極電極。 Next, a gate insulating film such as silicon nitride is formed by a plasma CVD method or the like. A source electrode and a drain electrode can also be formed on the gate insulating film. The source electrode and the drain electrode can be formed by, for example, forming a metal thin film of aluminum, gold, silver, copper, or an alloy thereof by vacuum evaporation or sputtering. The method of patterning the source electrode and the drain electrode may include the following methods: After forming a metal thin film, apply a resist and expose and develop it, leaving a resist on the portion where the electrode is to be formed, and then phosphoric acid Or aqua regia to remove the exposed metal, and finally remove the resist. In the case where a metal thin film such as gold is formed, the following methods are also applied: a resist is applied in advance, exposed and developed, and a resist is left on the portion where the electrode is not to be formed, and then a metal thin film is formed, The photoresist is removed together with the metal film. Further, the source electrode and the drain electrode may be formed by a method such as an inkjet method and using metal nano colloids such as silver and copper.

接下來,使用本發明之負型感光性樹脂組成物,藉由包含塗佈、曝光及顯影之光刻法,沿著各點輪廓將隔壁形成為俯視格狀。 Next, using the negative-type photosensitive resin composition of the present invention, the partition wall is formed into a plan view lattice shape along the outline of each point by a photolithography method including coating, exposure, and development.

然後以IJ法將半導體溶液塗佈於點內並使溶液乾燥而形成半導體層。以該半導體溶液來說,亦可使用有機半導體溶液及無機之塗佈型氧化物半導體溶液等。源極電極及汲極電極亦可於形成該半導體層後,再使用噴墨法等手法形成。 Then, a semiconductor solution is applied into the spots by the IJ method and the solution is dried to form a semiconductor layer. As the semiconductor solution, an organic semiconductor solution, an inorganic coated oxide semiconductor solution, or the like can also be used. The source electrode and the drain electrode can also be formed by using a method such as an inkjet method after forming the semiconductor layer.

最後,藉由濺鍍法等將ITO等之透光性電極成膜並成膜形成氮化矽等保護膜後即可形成。 Finally, a light-transmitting electrode such as ITO can be formed by sputtering, and then formed into a protective film such as silicon nitride.

實施例 Examples

以下使用實施例進一步詳細說明本發明,惟本發明不受該等實施例限定。例1、2、3為實施例,例4則為比較例。 Hereinafter, the present invention will be described in more detail using examples, but the present invention is not limited by these examples. Examples 1, 2, and 3 are examples, and example 4 is a comparative example.

各測定係以下述方法進行。 Each measurement was performed by the following method.

[數量平均分子量(Mn)] [Number average molecular weight (Mn)]

使用市售之GPC測定裝置(東曹公司製、裝置名:HLC-8320GPC),測定市售作為分子量測定用標準試料之數種聚合度相異的單分散聚苯乙烯聚合物之凝膠滲透層析(GPC),並以聚苯乙烯之分子量與保持時間(滯留時間)之關係為依據製出檢量線。 A commercially available GPC measuring device (manufactured by Tosoh Corporation, device name: HLC-8320GPC) was used to measure the gel permeation layer of several monodisperse polystyrene polymers with different degrees of polymerization that are commercially available as standard samples for molecular weight measurement. Analysis (GPC), and based on the relationship between the molecular weight of polystyrene and the retention time (residence time) as the basis for the calibration curve.

將試料以四氫呋喃稀釋成1.0質量%並使其通過0.5μm之濾器後,使用前述GPC測定裝置測出針對該試料之GPC。 The sample was diluted with tetrahydrofuran to 1.0% by mass and passed through a 0.5 μm filter, and then the GPC for the sample was measured using the GPC measurement device.

使用前述檢量線將試料之GPC頻譜進行電腦解析而求出該試料之數量平均分子量(Mn)。 The GPC spectrum of the sample was computer-analyzed using the aforementioned calibration curve to obtain the number average molecular weight (Mn) of the sample.

[水接觸角] [Water contact angle]

藉由不濡液滴法,依據JIS R3257「基板玻璃表面之濕潤性試驗方法」,於基材上之測定表面3處滴載水滴並針對各水滴進行測定。液滴為2μL/滴,測定則是在20℃下進行。接觸角係以3測定值之平均值(n=3)表示。 According to JIS R3257 "Test method for wettability of the surface of a substrate glass" by a non-drip liquid droplet method, water droplets were dripped on three measurement surfaces on a substrate, and the measurement was performed for each water droplet. The droplet was 2 μL / drop, and the measurement was performed at 20 ° C. The contact angle is represented by an average value of 3 measured values (n = 3).

[PGMEA接觸角] [PGMEA contact angle]

藉由不濡液滴法,依據JIS R3257「基板玻璃表面之濕潤性試驗方法」,於基材上之測定表面3處滴載PGMEA滴,並針對各PGMEA滴進行測定。液滴為2μL/滴,測定則是在20℃下進行。接觸角係以3測定值之平均值(n=3)表示。 According to JIS R3257 "Test method for wettability of substrate glass surface" by using the non-drip liquid droplet method, PGMEA droplets were dripped on three measurement surfaces on the substrate, and each PGMEA droplet was measured. The droplet was 2 μL / drop, and the measurement was performed at 20 ° C. The contact angle is represented by an average value of 3 measured values (n = 3).

合成例及實施例中使用之化合物的簡稱如同以下所述。 The abbreviations of the compounds used in Synthesis Examples and Examples are as follows.

(鹼可溶性樹脂(A)) (Alkali soluble resin (A))

EP4020G(商品名、旭有機材工業公司製、甲酚酚醛樹脂、(質量平均分子量(Mw):11,600、溶解速度:164(Å/秒))。 EP4020G (trade name, manufactured by Asahi Organic Materials Co., Ltd., cresol novolac resin, (mass average molecular weight (Mw): 11,600, dissolution rate: 164 (Å / sec)).

(交聯劑(B)) (Crosslinking agent (B))

MW-100LM;NIKALAC MW-100LM(商品名、Sanwa Chemical Co.Ltd.製;以六甲氧甲基三聚氰胺為基本骨架之甲基化三聚氰胺樹脂) MW-100LM; NIKALAC MW-100LM (trade name, manufactured by Sanwa Chemical Co. Ltd .; methylated melamine resin with hexamethoxymethyl melamine as the basic skeleton)

(光酸產生劑(C) (Photo acid generator (C)

CPI-210S;商品名、San-Apro Ltd.製;上述式(C2-2)所示之化合物。 CPI-210S; trade name, manufactured by San-Apro Ltd .; compound represented by the above formula (C2-2).

(作為撥墨劑(D)之原料的水解性矽烷化合物) (Hydrolyzable Silane Compound as Raw Material of Ink Repellent (D))

相當於水解性矽烷化合物(dx-1a)之化合物(d-11):CF3(CF2)5CH2CH2Si(OCH3)3 Compound (d-11) equivalent to hydrolyzable silane compound (dx-1a): CF 3 (CF 2 ) 5 CH 2 CH 2 Si (OCH 3 ) 3

相當於水解性矽烷化合物(dx-2)之化合物(d-21):Si(OC2H5)4Compound (d-21) equivalent to hydrolyzable silane compound (dx-2): Si (OC 2 H 5 ) 4 .

相當於水解性矽烷化合物(dx-3)之化合物(d-31):CH3S i(OCH3)3Compound (d-31) equivalent to hydrolyzable silane compound (dx-3): CH 3 S i (OCH 3 ) 3 .

相當於水解性矽烷化合物(dx-3)之化合物(d-32):C6H5Si(OCH3)3Compound (d-32) equivalent to hydrolyzable silane compound (dx-3): C 6 H 5 Si (OCH 3 ) 3 .

(用來製造比較例中使用之撥墨劑(Dcf)(具有碳原子數4~6之氟烷基且含有源自不飽和化合物之結構單元的加成聚合物)的化合物) (Compound used to produce the ink repellent (Dcf) (addition polymer having a fluoroalkyl group having 4 to 6 carbon atoms and containing a structural unit derived from an unsaturated compound) used in the comparative example)

C6FMA:CH2=C(CH3)COOCH2CH2(CF2)6F C6FMA: CH 2 = C (CH 3 ) COOCH 2 CH 2 (CF 2 ) 6 F

MAA:甲基丙烯酸 MAA: methacrylic acid

GMA:甲基丙烯酸環氧丙酯 GMA: glycidyl methacrylate

MMA:甲基丙烯酸甲酯 MMA: methyl methacrylate

MEK:甲基乙基酮(溶劑) MEK: methyl ethyl ketone (solvent)

V-65:(商品名、和光化學工業公司製(2,2’-偶氮雙(2.4二甲基戊腈)(聚合引發劑)) V-65: (trade name, (2,2'-azobis (2.4 dimethylvaleronitrile) (polymerization initiator) manufactured by Wako Chemical Industry Co., Ltd.)

(溶劑(E)) (Solvent (E))

PGMEA:丙二醇單甲基醚乙酸酯。 PGMEA: propylene glycol monomethyl ether acetate.

PGME:丙二醇單甲基醚。 PGME: propylene glycol monomethyl ether.

[合成例1:撥墨劑(D1)之合成及(D1-1)液之調製] [Synthesis Example 1: Synthesis of Ink Repellent (D1) and Preparation of (D1-1) Liquid]

於具備攪拌機之50cm3之三口燒瓶放入上述化合物(d-11)0.38g及上述化合物(d-21)2.35g而獲得撥墨劑(D1)之原料混合物。接著於該原料混合物放入PGME 5.56g,製成溶液(原料溶液)。 A 50 cm 3 three-necked flask equipped with a stirrer was charged with 0.38 g of the above-mentioned compound (d-11) and 2.35 g of the above-mentioned compound (d-21) to obtain a raw material mixture of an ink repellent (D1). Then, 5.56 g of PGME was put into this raw material mixture to prepare a solution (raw material solution).

於製得之原料溶液在室溫下一邊攪拌一邊滴下1.71g之1.0質量%硝酸水溶液。滴下結束後進一步攪拌5小時而獲得含有10質量%之(D1)的PGME溶液(D1-1)液。製得 之(D1-1)液經去除溶劑後的組成物之含氟含有率(氟原子質量%)為20.0質量%。又,(D1-1)液經去除溶劑後的組成物之數量平均分子量(Mn)為773。 To the prepared raw material solution, 1.71 g of a 1.0% by mass nitric acid aqueous solution was dropped while stirring at room temperature. After completion of the dropping, the solution was further stirred for 5 hours to obtain a PGME solution (D1-1) solution containing 10% by mass of (D1). be made of The fluorine-containing content (fluorine atomic mass%) of the composition after the solvent was removed from the (D1-1) liquid was 20.0 mass%. The number-average molecular weight (Mn) of the composition after the solvent was removed from the (D1-1) liquid was 773.

[合成例2:撥墨劑(D2)之合成及(D2-1)液之調製] [Synthesis Example 2: Synthesis of Ink Repellent (D2) and Preparation of (D2-1) Liquid]

於具備攪拌機之50cm3之三口燒瓶放入上述化合物(d-11)0.38g、上述化合物(d-21)1.11g及上述化合物(d-31)0.72g而獲得撥墨劑(D2)之原料混合物。接著於該原料混合物放入PGME 6.36g,製成溶液(原料溶液)。 In a 50 cm 3 three-necked flask equipped with a stirrer, 0.38 g of the above-mentioned compound (d-11), 1.11 g of the above-mentioned compound (d-21), and 0.72 g of the above-mentioned compound (d-31) were placed to obtain a raw material for the ink repellent (D2) mixture. Next, 6.36 g of PGME was put into this raw material mixture to prepare a solution (raw material solution).

於製得之原料溶液在室溫下一邊攪拌一邊滴下1.43g之1.0質量%硝酸水溶液。滴下結束後進一步攪拌5小時而獲得含有10質量%之(D2)的PGME溶液(D2-1)液。製得之(D2-1)液經去除溶劑後的組成物之含氟含有率(氟原子質量%)為20.0質量%。又,(D2-1)液經去除溶劑後的組成物之數量平均分子量(Mn)為810。 To the prepared raw material solution, 1.43 g of a 1.0% by mass nitric acid aqueous solution was dropped while stirring at room temperature. After completion of the dropping, the solution was further stirred for 5 hours to obtain a PGME solution (D2-1) solution containing 10% by mass of (D2). The solvent-removed composition of the obtained (D2-1) liquid had a fluorine content (fluorine atomic mass%) of 20.0% by mass. The number-average molecular weight (Mn) of the composition after the solvent was removed from the (D2-1) liquid was 810.

[合成例3:撥墨劑(D3)之合成及(D3-1)液之調製] [Synthesis Example 3: Synthesis of Ink Repellent (D3) and Preparation of (D3-1) Liquid]

於具備攪拌機之50cm3之三口燒瓶放入上述化合物(d-11)0.38g、上述化合物(d-21)0.74g及上述化合物(d-32)0.71g而獲得撥墨劑(D1)之原料混合物。接著於該原料混合物放入PGME 7.18g,製成溶液(原料溶液)。 In a 50 cm 3 three-necked flask equipped with a stirrer, 0.38 g of the above-mentioned compound (d-11), 0.74 g of the above-mentioned compound (d-21), and 0.71 g of the above-mentioned compound (d-32) were placed to obtain a raw material for the ink repellent (D1) mixture. Then, 7.18 g of PGME was put into this raw material mixture to prepare a solution (raw material solution).

於製得之原料溶液在室溫下一邊攪拌一邊滴下0.99g之1.0質量%硝酸水溶液。滴下結束後進一步攪拌5小時而製得含有10質量%之(D3)的PGME溶液(D3-1)液。製得 之(D3-1)液經去除溶劑後的組成物之含氟含有率(氟原子質量%)為20.0質量%。又,(D3-1)液經去除溶劑後的組成物之數量平均分子量(Mn)為880。 A 0.99 g 1.0% by mass nitric acid aqueous solution was dropped on the prepared raw material solution while stirring at room temperature. After completion of the dropping, the solution was further stirred for 5 hours to prepare a PGME solution (D3-1) solution containing 10% by mass of (D3). be made of The fluorine-containing content (fluorine atomic mass%) of the composition after the solvent was removed from the (D3-1) liquid was 20.0 mass%. The number-average molecular weight (Mn) of the composition after the solvent was removed from the (D3-1) liquid was 880.

[合成例4:撥墨劑(Dcf)之合成及(Dcf-1)液之調製] [Synthesis Example 4: Synthesis of Ink Repellent (Dcf) and Preparation of (Dcf-1) Liquid]

於具備攪拌機之內容積1L之高壓釜饋入MEK 420.0g、C6FMA 86.4g、MAA 18.0g、GMA 21.6g、MMA 54.0g及V-65 0.8g,在氮氣環境下一邊攪拌一邊在50℃下使該等聚合24小時而合成出粗共聚物。於製得之粗共聚物溶液加入己烷進行再沉澱純化後,施以真空乾燥。於製得之固體成分加入PGMEA 14643g並進行攪拌而獲得含有10質量%之撥墨劑(Dcf)的PGMEA溶液(Dcf-1)液。製得之(Dcf-1)液經去除溶劑後的組成物之含氟含有率(氟原子質量%)為27.4質量%。又,(Dcf-1)液經去除溶劑後的組成物之數量平均分子量(Mn)為49,325。 In a 1L autoclave equipped with a mixer, feed MEK 420.0g, C6FMA 86.4g, MAA 18.0g, GMA 21.6g, MMA 54.0g, and V-65 0.8g, and stir at 50 ° C while stirring in a nitrogen environment These polymers were polymerized for 24 hours to synthesize a crude copolymer. Hexane was added to the obtained crude copolymer solution for reprecipitation and purification, and then vacuum drying was performed. 14643 g of PGMEA was added to the obtained solid content and stirred to obtain a PGMEA solution (Dcf-1) liquid containing 10% by mass of an ink repellent (Dcf). The solvent-removed composition of the obtained (Dcf-1) solution had a fluorine content rate (fluorine atomic mass%) of 27.4% by mass. The number-average molecular weight (Mn) of the composition after the solvent was removed from the (Dcf-1) solution was 49,325.

將合成例1~4所得撥墨劑溶液中的撥墨劑(D)之氟原子含有率及數量平均分子量(Mn)連同撥墨劑(D)之饋入量組成(莫耳%)一起合併顯示於表1。 The fluorine atom content ratio and number average molecular weight (Mn) of the ink repellent (D) in the ink repellent solutions obtained in Synthesis Examples 1 to 4 are combined with the feed composition (mole%) of the ink repellent (D). Shown in Table 1.

[表1] [Table 1]

[例1] [example 1]

(負型感光性樹脂組成物之調製) (Preparation of negative photosensitive resin composition)

將(D1-1)液0.967g(固體成分為0.097g,其餘為PGME(溶劑))、EP4020G 19.34g、MW-100LM 4.84g、CPI-210S 0.73g及PGMEA 74.1g放入500cm3之攪拌用容器攪拌30分鐘而調製出負型感光性樹脂組成物1。 Put 0.967g of (D1-1) liquid (0.097g in solid content and PGME (solvent) in the rest), EP4020G 19.34g, MW-100LM 4.84g, CPI-210S 0.73g and PGMEA 74.1g into 500cm 3 for stirring The container was stirred for 30 minutes to prepare a negative photosensitive resin composition 1.

(硬化膜(隔壁)之製造) (Manufacture of hardened film (partition))

將10cm四方形的玻璃基板以乙醇進行30秒鐘超音波洗淨,接著進行5分鐘之紫外線/臭氧洗淨。於紫外線/臭氧洗淨係使用PL7-200(Senengineering Co.,Ltd.製)作為紫外線/臭氧產生裝置。而,關於以下的所有紫外線/臭氧處理,均使用本裝置作為紫外線/臭氧產生裝置。 A 10 cm square glass substrate was ultrasonically washed with ethanol for 30 seconds, followed by ultraviolet / ozone cleaning for 5 minutes. For UV / ozone cleaning, PL7-200 (manufactured by Senengineering Co., Ltd.) was used as the UV / ozone generator. In addition, this apparatus is used as an ultraviolet / ozone generating apparatus with respect to all the ultraviolet / ozone processes described below.

於洗淨後之玻璃基板表面上使用旋轉器塗佈負 型感光性樹脂組成物1後,於熱板上,在100℃之溫度條件下進行2分鐘之乾燥處理,形成膜厚2.5μm之乾燥膜。針對製得之乾燥膜表面,從膜側隔著具有開孔圖案(2.5cm×5cm)之光罩(可針對該圖案部區域以外進行光照射之光罩)隔開50μm之間隙,在25mW/cm2下照射1秒鐘、2秒鐘、5秒鐘或10秒鐘的高壓水銀燈之紫外線。 After the negative photosensitive resin composition 1 was coated on the surface of the cleaned glass substrate using a spinner, a drying process was performed on a hot plate at a temperature of 100 ° C. for 2 minutes to form a film thickness of 2.5 μm. membrane. With respect to the surface of the prepared dry film, a 50 μm gap was formed from the film side with a mask (2.5 cm × 5 cm) with an opening pattern (a mask capable of irradiating light outside the area of the pattern portion) at a 25 mW / cm 2 for 1 second irradiation, UV high pressure mercury lamp of 2 seconds, 5 seconds or 10 seconds.

接著將已進行曝光處理之玻璃基板浸漬於2.38質量%四甲基氫氧化銨水溶液中40秒鐘進行顯影後,以水沖洗未曝光部分的乾燥膜並使其乾燥。接下來令其於熱板上在230℃下加熱50分鐘,藉此獲得4種在除上述開孔圖案部以外之區域形成有負型感光性樹脂組成物1之硬化膜(隔壁)的玻璃基板(1)。 Next, the glass substrate subjected to the exposure treatment was immersed in a 2.38% by mass tetramethylammonium hydroxide aqueous solution for 40 seconds for development, and then the dry film of the unexposed portion was washed with water and dried. Next, it was heated on a hot plate at 230 ° C. for 50 minutes, thereby obtaining 4 types of glass substrates having a cured film (partition wall) of the negative photosensitive resin composition 1 formed in a region other than the opening pattern portion. (1).

(評估) (Evaluation)

針對以上述方法製得之負型感光性樹脂組成物1及形成有硬化膜(隔壁)之玻璃基板(1)進行以下評估。將評估結果連同負型感光性樹脂組成物之組成一起顯示於表2。 The following evaluations were performed on the negative photosensitive resin composition 1 prepared by the above method and the glass substrate (1) on which a cured film (partition wall) was formed. The evaluation results are shown in Table 2 together with the composition of the negative photosensitive resin composition.

<撥墨性(隔壁).親墨性(點).顯影殘渣> <Ink repellency (next door). Intimacy (dot). Development residue>

測出製得之玻璃基板(1)之硬化膜即隔壁表面(曝光部分)之相對於PGMEA的接觸角,以及藉由顯影去除乾燥膜(未曝光部分)之部分即點部分(玻璃基板表面)之相對於水之接觸角。此時,亦以點部分之相對於水之接觸角進行針對顯影殘渣的評估。評估係以下述基準進行。 The contact angle of the hardened film of the prepared glass substrate (1), that is, the surface of the partition wall (exposed portion) with respect to PGMEA, and the point portion (glass substrate surface) where the dried film (unexposed portion) was removed by development were measured. Contact angle with respect to water. At this time, the evaluation of the development residue was also performed with the contact angle with respect to water at the point portion. The evaluation was performed on the following basis.

(基準) (Benchmark)

○(良):水接觸角小於30度 ○ (Good): Water contact angle is less than 30 degrees

×(不良):水接觸角為30度以上 × (bad): water contact angle is 30 degrees or more

然後,針對玻璃基板(1)中將曝光時間設為10秒鐘來製造硬化膜者,對形成有硬化膜之側的表面整體進行1分鐘的紫外線/臭氧照射,測定照射1分鐘後硬化膜(隔壁)表面之相對於PGMEA之接觸角及玻璃基板表面之相對於水之接觸角。測定方法與上述相同。 Then, for a person who produces a cured film with an exposure time of 10 seconds on the glass substrate (1), the entire surface of the side where the cured film is formed is irradiated with UV / ozone for 1 minute, and the cured film is measured after 1 minute of irradiation ( The contact angle of the surface of the (partition wall) with respect to PGMEA and the contact angle of the surface of the glass substrate with respect to water. The measurement method is the same as described above.

<貯藏穩定性> <Storage stability>

將負型感光性樹脂組成物在23℃(室溫)下於玻璃製螺旋瓶中保存一個月。保存一個月後,使用旋轉器將負型感光性樹脂組成物塗佈於以與上述硬化膜(隔壁)之製造同樣的方法加以洗淨之10cm×10cm玻璃基板表面上,形成塗膜。接著在100℃下,於熱板上使其乾燥2分鐘而形成膜厚2μm之乾燥膜。以目測觀察乾燥膜之外觀並以下述基準進行評估。 The negative-type photosensitive resin composition was stored in a glass screw bottle at 23 ° C. (room temperature) for one month. After one month of storage, a negative-type photosensitive resin composition was applied to a surface of a 10 cm × 10 cm glass substrate which was washed in the same manner as in the production of the cured film (partition wall) using a spinner to form a coating film. Then, it was dried on a hot plate at 100 ° C. for 2 minutes to form a dry film having a film thickness of 2 μm. The appearance of the dried film was visually observed and evaluated based on the following criteria.

(基準) (Benchmark)

○(良):乾燥膜上之異物為5個以下。 ○ (Good): The number of foreign matters on the dried film was 5 or less.

×(不良):乾燥膜上之異物為6個以上且觀察到從玻璃基板中心部呈放射狀的筋痕紋樣。 × (defective): There are 6 or more foreign matters on the dried film, and a radial wrinkle pattern is observed from the center portion of the glass substrate.

[例2] [Example 2]

除了使用(D2-1)液來替代(D1-1)液以外,以與例1同樣的方式製作負型感光性樹脂組成物2及形成有負型感光性樹脂組成物2之硬化膜的玻璃基板(2),並以與例1同樣的方式進行評估。 A negative photosensitive resin composition 2 and a glass having a cured film of the negative photosensitive resin composition 2 formed in the same manner as in Example 1 except that the (D2-1) solution was used instead of the (D1-1) solution. The substrate (2) was evaluated in the same manner as in Example 1.

[例3] [Example 3]

除了使用(D3-1)液來替代(D1-1)液以外,以與例1同樣的方式製作負型感光性樹脂組成物3及形成有負型感光性樹脂組成物3之硬化膜的玻璃基板(3),並以與例1同樣的方式進行評估。 A negative-type photosensitive resin composition 3 and a glass having a cured film of the negative-type photosensitive resin composition 3 formed in the same manner as in Example 1 except that the (D3-1) solution was used instead of the (D1-1) solution. The substrate (3) was evaluated in the same manner as in Example 1.

[例4] [Example 4]

除了使用(Dcf-1)液來替代(D1-1)液以外,以與例1同樣的方式製作負型感光性樹脂組成物4及形成有負型感光性樹脂組成物4之硬化膜的玻璃基板(4),並以與例1同樣的方式進行評估。 A negative photosensitive resin composition 4 and a glass on which a cured film of the negative photosensitive resin composition 4 was formed were produced in the same manner as in Example 1 except that the (Dcf-1) solution was used instead of the (D1-1) solution. The substrate (4) was evaluated in the same manner as in Example 1.

將例2~4之評估結果連同負型感光性樹脂組成物之組成一起顯示於表2。 The evaluation results of Examples 2 to 4 are shown in Table 2 together with the composition of the negative photosensitive resin composition.

[表2] [Table 2]

從表2可知,因為例1、2及3所得之硬化膜使用本發明之撥墨劑,所以即使曝光量很低,依舊可顯示良好的撥墨性,且於紫外線/臭氧照射後亦可維持高撥墨性,並且玻璃基板表面具有良好的親水性。還可知曉貯藏穩定性也很高。另一方面可以知道,因為在例4中係使用非依據本發明之撥墨劑,所以在紫外線/臭氧照射後無法維持高撥墨性。 As can be seen from Table 2, since the hardened films obtained in Examples 1, 2, and 3 use the ink repellent of the present invention, even if the exposure amount is very low, good ink repellency can still be displayed, and it can be maintained after ultraviolet / ozone irradiation. High ink repellency, and the glass substrate surface has good hydrophilicity. It is also known that the storage stability is also high. On the other hand, it can be known that, since the ink repellent agent according to the present invention is used in Example 4, it is impossible to maintain high ink repellency after ultraviolet / ozone irradiation.

產業上之可利用性 Industrial availability

使用本發明之負型感光性樹脂組成物形成的隔壁之撥墨性良好,於紫外線/臭氧照射後依舊可保持撥墨性,可有效地作為具有於該隔壁所劃分之開口部均勻塗佈印墨並精確形成之點的光學元件用隔壁使用。又,本發明之負型感光性樹脂組成物在各種光學元件尤其是有機EL元件之發光層等有機層、量子點顯示器之量子點層及電洞輸送層、TFT陣列之導體圖案及半導體圖案、構成TFT通道層之有機半導體層、閘極電極、源極電極、汲極電極、閘極配線及源極配線、薄膜太陽電池等當中,可適於作為利用IJ法進行圖案印刷時之隔壁形成用組成物使用。 The partition wall formed by using the negative photosensitive resin composition of the present invention has good ink repellency, and can maintain the ink repellency after ultraviolet / ozone irradiation, and can be effectively used as a uniform coating printing on the opening portion divided by the partition wall. The optical element forming the dots accurately is used next to the wall. In addition, the negative photosensitive resin composition of the present invention is used in organic layers such as light emitting layers of various optical elements, especially organic EL elements, quantum dot layers and hole transport layers in quantum dot displays, conductor patterns and semiconductor patterns in TFT arrays, Among the organic semiconductor layer, gate electrode, source electrode, drain electrode, gate wiring and source wiring, thin-film solar cell, etc. constituting the TFT channel layer, it can be suitably used as a barrier wall for pattern printing using the IJ method. Composition is used.

而,在此係引用已於2014年4月25日提出申請之日本專利申請案2014-092092號之說明書、申請專利範圍、圖式及摘要的全部內容並納入作為本發明說明書之揭示。 However, the entire contents of the specification, patent application scope, drawings, and abstract of Japanese Patent Application No. 2014-092092, which was filed on April 25, 2014, are incorporated herein as a disclosure of the specification of the present invention.

Claims (15)

一種負型感光性樹脂組成物,含有鹼可溶性樹脂(A)、交聯劑(B)、光酸產生劑(C)及撥墨劑(D),該撥墨劑(D)含有水解性矽烷化合物(s1)作為單體及/或部分水解(共)縮合物,且該水解性矽烷化合物(s1)具有氟伸烷基及/或氟烷基與水解性基;並且,相對於100質量份之鹼可溶性樹脂(A),前述撥墨劑(D)之含量為0.2~3質量份。A negative photosensitive resin composition containing an alkali-soluble resin (A), a crosslinking agent (B), a photoacid generator (C), and an ink repellent (D), the ink repellent (D) containing a hydrolyzable silane Compound (s1) is a monomer and / or a partially hydrolyzed (co) condensate, and the hydrolyzable silane compound (s1) has a fluoroalkylene group and / or a fluoroalkyl group and a hydrolyzable group; The content of the alkali-soluble resin (A), the ink repellent (D) is 0.2 to 3 parts by mass. 如請求項1之負型感光性樹脂組成物,其中前述撥墨劑(D)中之氟原子含有率為1~40質量%。The negative photosensitive resin composition according to claim 1, wherein the fluorine atom content in the ink repellent (D) is 1 to 40% by mass. 如請求項1或2之負型感光性樹脂組成物,其中前述撥墨劑(D)含有水解性矽烷化合物(s2)作為單體及/或部分水解(共)縮合物,且該水解性矽烷化合物(s2)於矽原子鍵結有4個水解性基。For example, the negative photosensitive resin composition of claim 1 or 2, wherein the ink repellent (D) contains a hydrolyzable silane compound (s2) as a monomer and / or a partially hydrolyzed (co) condensate, and the hydrolyzable silane The compound (s2) has four hydrolyzable groups bonded to a silicon atom. 如請求項1或2之負型感光性樹脂組成物,其中前述撥墨劑(D)含有水解性矽烷化合物(s3)作為單體及/或部分水解(共)縮合物,且該水解性矽烷化合物(s3)僅具有烴基及水解性基。For example, the negative photosensitive resin composition of claim 1 or 2, wherein the ink repellent (D) contains a hydrolyzable silane compound (s3) as a monomer and / or a partially hydrolyzed (co) condensate, and the hydrolyzable silane The compound (s3) has only a hydrocarbon group and a hydrolyzable group. 如請求項1或2之負型感光性樹脂組成物,其中前述撥墨劑(D)含有水解性矽烷化合物(s4)作為單體及/或部分水解(共)縮合物,該水解性矽烷化合物(s4)具有陽離子聚合性基及水解性基且不含氟原子。For example, the negative photosensitive resin composition of claim 1 or 2, wherein the ink repellent (D) contains a hydrolyzable silane compound (s4) as a monomer and / or a partially hydrolyzed (co) condensate, and the hydrolyzable silane compound (s4) It has a cationically polymerizable group and a hydrolyzable group and does not contain a fluorine atom. 如請求項1或2之負型感光性樹脂組成物,其中前述鹼可溶性樹脂(A)之含量在負型感光性樹脂組成物之總固體成分中佔10~90質量%。According to the negative photosensitive resin composition of claim 1 or 2, wherein the content of the alkali-soluble resin (A) mentioned above accounts for 10 to 90% by mass of the total solid content of the negative photosensitive resin composition. 如請求項1或2之負型感光性樹脂組成物,其中相對於100質量份之鹼可溶性樹脂(A),前述交聯劑(B)及光酸產生劑之含量分別為2~50質量份及0.1~20質量份。For example, the negative photosensitive resin composition of claim 1 or 2, wherein the content of the crosslinking agent (B) and the photoacid generator is 2 to 50 parts by mass relative to 100 parts by mass of the alkali-soluble resin (A). And 0.1 to 20 parts by mass. 如請求項1或2之負型感光性樹脂組成物,其中相對於100質量份之鹼可溶性樹脂(A),前述撥墨劑(D)之含量為0.01~20質量份。For example, the negative photosensitive resin composition of claim 1 or 2, wherein the content of the ink repellent (D) is 0.01 to 20 parts by mass based on 100 parts by mass of the alkali-soluble resin (A). 如請求項1或2之負型感光性樹脂組成物,其更含有溶劑(E),該溶劑(E)係選自於由丙二醇單甲基醚乙酸酯、丙二醇單甲基醚、二乙二醇乙基甲基醚、二乙二醇單乙基醚乙酸酯及2-丙醇所構成群組中之至少1種。For example, the negative photosensitive resin composition of claim 1 or 2 further contains a solvent (E) selected from the group consisting of propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and diethyl ether. At least one of the group consisting of glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, and 2-propanol. 如請求項9之負型感光性樹脂組成物,其中相對於負型感光性樹脂組成物總量,前述溶劑(E)之含量為50~99質量%。For example, the negative photosensitive resin composition of claim 9, wherein the content of the solvent (E) is 50 to 99% by mass based on the total amount of the negative photosensitive resin composition. 一種隔壁,係形成為將基板表面劃分成多數個點形成用分區之形狀,且該隔壁係由如請求項1至10中任一項之負型感光性樹脂組成物之硬化膜所構成。A partition wall is formed in a shape that divides a substrate surface into a plurality of dot-forming partitions, and the partition wall is made of a cured film of a negative photosensitive resin composition according to any one of claims 1 to 10. 如請求項11之隔壁,其寬為100μm以下,隔壁間之距離(圖案寬度)為300μm以下,高度為0.05~50μm。For example, the partition wall of claim 11 has a width of 100 μm or less, a distance (pattern width) between the partitions of 300 μm or less, and a height of 0.05 to 50 μm. 一種光學元件,係於基板表面具有多數個點及位於相鄰之點之間的隔壁,其特徵在於:前述隔壁係以如請求項11或12之隔壁來形成。An optical element has a plurality of points on a substrate surface and a partition wall between adjacent points. The optical element is characterized in that the partition wall is formed by a partition wall according to claim 11 or 12. 如請求項13之光學元件,其中前述點係以噴墨法形成。The optical element according to claim 13, wherein the aforementioned dots are formed by an inkjet method. 如請求項13或14之光學元件,其中前述光學元件為有機EL元件、量子點顯示器、TFT陣列或薄膜太陽電池。The optical element according to claim 13 or 14, wherein the aforementioned optical element is an organic EL element, a quantum dot display, a TFT array, or a thin-film solar cell.
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