TWI653697B - 用於減少熱能傳輸之基板載體及其使用及應用其之系統 - Google Patents

用於減少熱能傳輸之基板載體及其使用及應用其之系統 Download PDF

Info

Publication number
TWI653697B
TWI653697B TW103140182A TW103140182A TWI653697B TW I653697 B TWI653697 B TW I653697B TW 103140182 A TW103140182 A TW 103140182A TW 103140182 A TW103140182 A TW 103140182A TW I653697 B TWI653697 B TW I653697B
Authority
TW
Taiwan
Prior art keywords
substrate carrier
substrate
open
cutout
cutouts
Prior art date
Application number
TW103140182A
Other languages
English (en)
Chinese (zh)
Other versions
TW201533828A (zh
Inventor
安德率斯愛華德 露博
史丹分 凱樂
佑維 史奇伯勒
史丹分 班格特
湯瑪士 爵伯勒
若伯特 斯巴茲
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201533828A publication Critical patent/TW201533828A/zh
Application granted granted Critical
Publication of TWI653697B publication Critical patent/TWI653697B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/13—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H10P72/135—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterised by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/17—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/18—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
TW103140182A 2013-11-25 2014-11-20 用於減少熱能傳輸之基板載體及其使用及應用其之系統 TWI653697B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??PCT/EP2013/074604 2013-11-25
PCT/EP2013/074604 WO2015074725A1 (en) 2013-11-25 2013-11-25 Substrate carrier for a reduced transmission of thermal energy

Publications (2)

Publication Number Publication Date
TW201533828A TW201533828A (zh) 2015-09-01
TWI653697B true TWI653697B (zh) 2019-03-11

Family

ID=49681012

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103140182A TWI653697B (zh) 2013-11-25 2014-11-20 用於減少熱能傳輸之基板載體及其使用及應用其之系統

Country Status (7)

Country Link
US (1) US20160276142A1 (https=)
EP (1) EP3075004A1 (https=)
JP (1) JP6321172B2 (https=)
KR (1) KR20160089507A (https=)
CN (1) CN105745744B (https=)
TW (1) TWI653697B (https=)
WO (1) WO2015074725A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210233783A1 (en) * 2018-06-25 2021-07-29 LINDENBERG Ralph Carrier for a substrate and method for carrying a substrate
WO2021243325A1 (en) * 2020-05-29 2021-12-02 Persimmon Technologies Corporation Robot for high-temperature applications
DE102021003330B3 (de) * 2021-06-28 2022-09-01 Singulus Technologies Aktiengesellschaft Substratträger
DE102021003326B3 (de) * 2021-06-28 2022-09-08 Singulus Technologies Aktiengesellschaft Substratträger

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6183026B1 (en) 1999-04-07 2001-02-06 Gasonics International Corporation End effector
US20120048186A1 (en) 2010-08-27 2012-03-01 Applied Materials Gmbh & Co. Kg Carrier for a substrate and a method for assembling the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03106357U (https=) * 1990-02-19 1991-11-01
JP2004235439A (ja) * 2003-01-30 2004-08-19 Shin Etsu Handotai Co Ltd サセプタ及び気相成長装置
JP2007150336A (ja) * 2007-01-09 2007-06-14 Nsk Ltd 基板搬送装置
US8042697B2 (en) * 2008-06-30 2011-10-25 Memc Electronic Materials, Inc. Low thermal mass semiconductor wafer support
FR2935769B1 (fr) * 2008-09-10 2016-08-12 Renault Sas Articulation elastique de suspension de vehicule automobile et structure de vehicule automobile comportant une telle articulation
JP4895061B2 (ja) * 2010-04-26 2012-03-14 アキム株式会社 部品搬送キャリア
JP5881956B2 (ja) * 2011-02-28 2016-03-09 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびウェーハホルダ
JP5667012B2 (ja) * 2011-08-26 2015-02-12 東京エレクトロン株式会社 リング状シールド部材、その構成部品及びリング状シールド部材を備えた基板載置台
JP5522181B2 (ja) * 2012-01-26 2014-06-18 株式会社安川電機 搬送ロボット

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6183026B1 (en) 1999-04-07 2001-02-06 Gasonics International Corporation End effector
US20120048186A1 (en) 2010-08-27 2012-03-01 Applied Materials Gmbh & Co. Kg Carrier for a substrate and a method for assembling the same

Also Published As

Publication number Publication date
JP2016541117A (ja) 2016-12-28
CN105745744B (zh) 2018-10-26
WO2015074725A1 (en) 2015-05-28
JP6321172B2 (ja) 2018-05-09
CN105745744A (zh) 2016-07-06
EP3075004A1 (en) 2016-10-05
KR20160089507A (ko) 2016-07-27
US20160276142A1 (en) 2016-09-22
TW201533828A (zh) 2015-09-01

Similar Documents

Publication Publication Date Title
TWI653697B (zh) 用於減少熱能傳輸之基板載體及其使用及應用其之系統
EP3370477B1 (en) Heater unit
US9490150B2 (en) Substrate support for substrate backside contamination control
TW201543604A (zh) 晶舟
US20140217665A1 (en) Substrate support with controlled sealing gap
KR102942725B1 (ko) 공간적 멀티-웨이퍼 프로세싱 툴을 위한 페데스탈 히터
WO2017110552A1 (ja) ウェハ支持機構、化学気相成長装置およびエピタキシャルウェハの製造方法
JP2017503342A (ja) 搬入／搬出装置及びリアクタを有するエピタキシャル成長用の反応チャンバ
US10699936B2 (en) Substrate processing system
WO2014116434A1 (en) Substrate processing chamber components incorporating anisotropic materials
US9916994B2 (en) Substrate support with multi-piece sealing surface
EP3399069A1 (en) Crucible for accommodating and heating material, and system comprising arranged crucible and heater
US20120145701A1 (en) Electrical resistance heater and heater assemblies
CN104934345A (zh) 一种等离子体装置
US10844490B2 (en) Vapor phase film deposition apparatus
KR20180057704A (ko) 재료 증착 프로세스에서 기판을 운반하기 위한 캐리어 및 기판을 운반하기 위한 방법
US12305284B2 (en) Apparatus and methods for fine planar non-uniformity improvement
KR101450006B1 (ko) 기판처리장치
KR200459392Y1 (ko) 히터블록
KR102387882B1 (ko) 플래튼 지지 구조체 및 플래튼
EP4319482A1 (en) Placement panel and placement structure
KR101523313B1 (ko) 기판처리장치
CN107438897A (zh) 用于待处理的基板的载体系统
TW202326899A (zh) 具有平衡rf阻抗的雙極esc
KR20130131503A (ko) 배치식 장치