CN105745744B - 用于减少的热能传输的基板载体 - Google Patents

用于减少的热能传输的基板载体 Download PDF

Info

Publication number
CN105745744B
CN105745744B CN201380081075.0A CN201380081075A CN105745744B CN 105745744 B CN105745744 B CN 105745744B CN 201380081075 A CN201380081075 A CN 201380081075A CN 105745744 B CN105745744 B CN 105745744B
Authority
CN
China
Prior art keywords
substrate carrier
cutout
substrate
notch
end part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380081075.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN105745744A (zh
Inventor
A·E·洛珀
S·凯勒
U·舒斯勒
S·邦格特
T·格贝勒
N·施帕茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN105745744A publication Critical patent/CN105745744A/zh
Application granted granted Critical
Publication of CN105745744B publication Critical patent/CN105745744B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/13—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H10P72/135—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements characterised by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/17—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/18—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3218—Conveying cassettes, containers or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
CN201380081075.0A 2013-11-25 2013-11-25 用于减少的热能传输的基板载体 Active CN105745744B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2013/074604 WO2015074725A1 (en) 2013-11-25 2013-11-25 Substrate carrier for a reduced transmission of thermal energy

Publications (2)

Publication Number Publication Date
CN105745744A CN105745744A (zh) 2016-07-06
CN105745744B true CN105745744B (zh) 2018-10-26

Family

ID=49681012

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380081075.0A Active CN105745744B (zh) 2013-11-25 2013-11-25 用于减少的热能传输的基板载体

Country Status (7)

Country Link
US (1) US20160276142A1 (https=)
EP (1) EP3075004A1 (https=)
JP (1) JP6321172B2 (https=)
KR (1) KR20160089507A (https=)
CN (1) CN105745744B (https=)
TW (1) TWI653697B (https=)
WO (1) WO2015074725A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210233783A1 (en) * 2018-06-25 2021-07-29 LINDENBERG Ralph Carrier for a substrate and method for carrying a substrate
WO2021243325A1 (en) * 2020-05-29 2021-12-02 Persimmon Technologies Corporation Robot for high-temperature applications
DE102021003330B3 (de) * 2021-06-28 2022-09-01 Singulus Technologies Aktiengesellschaft Substratträger
DE102021003326B3 (de) * 2021-06-28 2022-09-08 Singulus Technologies Aktiengesellschaft Substratträger

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6183026B1 (en) * 1999-04-07 2001-02-06 Gasonics International Corporation End effector
CN102237291A (zh) * 2010-04-26 2011-11-09 亚企睦自动设备有限公司 部件搬运载体
WO2012025484A1 (en) * 2010-08-27 2012-03-01 Applied Materials, Inc. Carrier for a substrate and a method for assembling the same
CN102956431A (zh) * 2011-08-26 2013-03-06 东京毅力科创株式会社 环状屏蔽部件、其构成零件和基板载置台
CN103223674A (zh) * 2012-01-26 2013-07-31 株式会社安川电机 搬运机器人

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03106357U (https=) * 1990-02-19 1991-11-01
JP2004235439A (ja) * 2003-01-30 2004-08-19 Shin Etsu Handotai Co Ltd サセプタ及び気相成長装置
JP2007150336A (ja) * 2007-01-09 2007-06-14 Nsk Ltd 基板搬送装置
US8042697B2 (en) * 2008-06-30 2011-10-25 Memc Electronic Materials, Inc. Low thermal mass semiconductor wafer support
FR2935769B1 (fr) * 2008-09-10 2016-08-12 Renault Sas Articulation elastique de suspension de vehicule automobile et structure de vehicule automobile comportant une telle articulation
JP5881956B2 (ja) * 2011-02-28 2016-03-09 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびウェーハホルダ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6183026B1 (en) * 1999-04-07 2001-02-06 Gasonics International Corporation End effector
CN102237291A (zh) * 2010-04-26 2011-11-09 亚企睦自动设备有限公司 部件搬运载体
WO2012025484A1 (en) * 2010-08-27 2012-03-01 Applied Materials, Inc. Carrier for a substrate and a method for assembling the same
CN102956431A (zh) * 2011-08-26 2013-03-06 东京毅力科创株式会社 环状屏蔽部件、其构成零件和基板载置台
CN103223674A (zh) * 2012-01-26 2013-07-31 株式会社安川电机 搬运机器人

Also Published As

Publication number Publication date
JP2016541117A (ja) 2016-12-28
WO2015074725A1 (en) 2015-05-28
JP6321172B2 (ja) 2018-05-09
CN105745744A (zh) 2016-07-06
EP3075004A1 (en) 2016-10-05
KR20160089507A (ko) 2016-07-27
TWI653697B (zh) 2019-03-11
US20160276142A1 (en) 2016-09-22
TW201533828A (zh) 2015-09-01

Similar Documents

Publication Publication Date Title
CN105745744B (zh) 用于减少的热能传输的基板载体
US20150270150A1 (en) Boat
US20140251214A1 (en) Heated substrate support with flatness control
CN108475635B (zh) 晶片支承机构、化学气相沉积装置和外延晶片的制造方法
TW201700779A (zh) Pecvd載具
KR102219361B1 (ko) 기판 처리 장치, 온도 측정 유닛 및 반도체 장치의 제조 방법
TW201712790A (zh) 用於晶圓處理系統的熱管理系統及方法
KR102600377B1 (ko) 열 절연 전기 접촉 프로브 및 가열형 플래튼 어셈블리
KR102942725B1 (ko) 공간적 멀티-웨이퍼 프로세싱 툴을 위한 페데스탈 히터
TW202017692A (zh) 升降銷固持器
JP6230073B2 (ja) 加熱ランプのまわりの空気流の減少を容易にするための基部を有する加熱ランプ
CN201352552Y (zh) 用于高温提取的先进fi叶片
JP5192719B2 (ja) 加熱装置および基板処理装置
US20170067158A1 (en) Substrate Carrier System for Moving Substrates in a Vertical Oven and Method for Processing Substrates
WO2014116434A1 (en) Substrate processing chamber components incorporating anisotropic materials
EP3399069A1 (en) Crucible for accommodating and heating material, and system comprising arranged crucible and heater
CN104934345A (zh) 一种等离子体装置
JP2016541117A5 (https=)
CN105261576A (zh) 一种加热腔室及半导体加工设备
KR101361711B1 (ko) 공정챔버의 지지유닛 및 이를 포함하는 기판처리장치
CN106030779A (zh) 平台支撑结构
CN107438897A (zh) 用于待处理的基板的载体系统
CN120109046A (zh) 一种热处理装置
TWI290351B (en) Wafer cassette used in high temperature baking process
JP2012109409A (ja) 基板搬送トレイ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant