TWI649791B - Electronic device manufacturing equipment and its control technology, and electronic device and its manufacturing method - Google Patents

Abstract

Provide manufacturing equipment for processing peeling / combining high quality, high efficiency or low cost epitaxial film.

For example, it is equipped with: a substrate holder 12 for maintaining a growth substrate 13 for obtaining a thin film 14 of an epitaxial film, a substrate holder 11 for supporting the substrate holder, and a film holder for maintaining a thin film peeled from the substrate for growth 16. The film holder 15 supporting the film holder, the first chamber 200 formed with the substrate support and the film holder, the second chamber 210 formed with the substrate holder and the substrate support, and the film holder and film support The peeling device for the third compartment 220 formed by the body; the manufacturing equipment for the pressure device 50 for applying the first, second, and third gas pressures corresponding to the first, second, and third compartments;

Description

Electronic device manufacturing equipment and its control technology, and electronics Device and its manufacturing method

The present invention relates to manufacturing equipment for electronic devices and their control techniques, as well as electronic devices and methods for manufacturing the same. Electronic devices also include semiconductor devices, and manufacturing equipment for manufacturing electronic devices also includes semiconductor manufacturing equipment. For example, it is related to an epitaxial film that will grow from a substrate (hereinafter referred to as "thin film") 》 The separation technology, or the technology of bonding the separated epitaxial film “thin film” to other substrates “or transcription material”.

As an apparatus for separating the epitaxial film from the substrate, for example, the structure disclosed in Patent Document 1 "FIG. 3", and the apparatus disclosed in Patent Document 1 are configured to have a suction groove (suction groove) by vacuum suction (Vacuum suction) the semiconductor substrate that bends the semiconductor substrate and maintains it on the curved suction surface; by pressing the wedge into the layer between the semiconductor substrate and the semiconductor thin film, the "porous" edge ( edge) "a wedge section that peels the semiconductor film from the semiconductor substrate; and a semiconductor film maintenance section that has a suction hole and a buffer section that is sucked and maintained by vacuum suction of the semiconductor film; and the structures of these sections are revealed .

Next, in the structure "FIG. 4" disclosed in Patent Document 2, in the peeling device that peels the mesh film from the Si substrate, it is revealed that a pressure is applied to the mesh film grown on the Si substrate, and the mesh is sucked when the inside of the peeling device is vacuum suctioned. The film-like structure is drawn from the peeling device to the top.

Next, in the structure "FIG. 3" disclosed in Patent Document 3, a nitride semiconductor crystal that grows epitaxially on the first substrate by a heating section such as a hot plate At this point, thermal shock is given to peel off the film to reveal this structure. In addition, a structure in which peeling is performed by mechanical shock (fluid spout) and vibration shock (ultrasonic wave oscillator) is disclosed.

Next, the structure "FIG. 1" disclosed in Patent Document 4 is a film peeling detection device that detects peeling of a film adhered to the surface of a substrate in a non-contact manner, and reveals: a laser beam that irradiates a laser beam on the substrate A laser irradiation optical system and an image sensor that detects scattered light contained in the scattered light and detects the speckle pattern contained in the scattered light optically, and Based on the output of the image sensor, peeling judgment method to judge the peeling of the film (peeling judgment method). 【Patent Literature】

[Patent Document 1] JP 2004-128148 [Patent Document 2] JP 2001-85725 [Patent Document 3] JP 2007-220899 [Patent Document 4] JP 2002-005816

[Problems to be solved by the invention]

The peeling device and the bending device "Bending device for bending the film toward the rest of the substrate that becomes part of the product", with their respective high-precision, it is necessary to make the reliability of the film (reliability) Improve; In addition, the handling process of peeling film (handling process) "From peeling operation to bending operation" is also necessary from the viewpoint of improving the reliability of the peeled film; Reliability has been improving, and the cost of these devices must be reduced.

For example, the manufacturing equipment disclosed in Patent Document 1 includes a controller, which must be adjusted for peeling in accordance with the different peel strengths of the porous layer as a separation layer, "difficult to peel, easy to peel". Constant speed rotation of wafer, insertion amount of wedge, and press-in pressure of wedge. The increase in the number of parts of manufacturing equipment will increase costs.

For example, in the structure disclosed in Patent Document 1, the semiconductor film maintenance department is designed to constantly maintain the upward tension and the compression spring to press the shaft up, after sucking the semiconductor film, from The tension of the semiconductor substrate in the direction of peeling the semiconductor film is often maintained, and it becomes a structure that promotes peeling; that is, the film that the compression spring continuously peels through the wedge is not related to the control of the controller, because the peeling is promoted unilaterally, which results in reliable film Sexuality is reduced. The structure disclosed in Patent Document 2 is also the same.

For example, the structure disclosed in Patent Document 3 also discloses the structure of peeling the film by three methods "thermal shock (mechanical shock), mechanical shock (vibration shock)", but does not disclose A method for maintaining the reliability of a continuously peeled film, and its structure. At least one of the aforementioned multiple issues is a problem to be solved from the viewpoint of continuously improving the reliability of the peeled film or reducing the cost of these devices. [Methods taken to solve the problem]

The manufacturing equipment of the present invention is equipped with a peeling device and a pressure device. The peeling device includes a substrate holder for maintaining the growth substrate on which the film is obtained, a substrate holder for supporting the substrate holder, a film holder for maintaining the film peeled from the growth substrate, and a film holder for supporting the film holder, And a first chamber composed of a substrate support and a film holder, a second chamber composed of a substrate holder and a substrate support, and a third chamber composed of a film holder and a film support, the above constitutes peeling Device; the pressure device is applied to the first, second and third gas pressure (pressure force) corresponding to the first, second and third compartments respectively; the invention is characterized by this.

[Example 1]

FIG. 1 simply shows one of the plural embodiments of the cross-sectional view of the manufacturing equipment of the present invention. The manufacturing apparatus 1 disclosed in FIG. 1 includes a peeling device 10, a bonding device 20, a pressure device 50, and a film carrier transport mechanism 30 and a chassis 40.

The following briefly demonstrates several features of the present invention, but these features are not intended to limit the special features of the invention represented by the scope of the patent application.

As a first feature, the peeling device 10 is constituted by the substrate support 11 and the movable film support 15; the coupling device 20 is constituted by the movable transcription support 21 and the movable film support 15. That is, one film support 15 is used by both the peeling device 10 and the bonding device 20. One film support 15 is connected to the film support transport mechanism 30. Since the peeled film 14 is also used in the bonding apparatus 20, it is expected that the quality of the peeled film 14 is improved and the throughput of the manufacturing operation is shortened.

As a second feature, the pressure device 50 supplies the most suitable gas pressures of the three compartments "first, second, and third compartments" of the peeling device 10 to peel the film 14. The first chamber 200 is applied with the first gas pressure of "approximately 1 kilogram-force per square centimeter (kgf / cm ² )" which is slightly higher than atmospheric pressure, and the second and third chambers are applied with the second and third chambers which are slightly lower than atmospheric pressure. 3 gas pressure, at least the difference between the first and third gas pressure should be placed on both sides of the film 14; thereby, the degree of mutual adsorption between the film 14 and the film maintenance body 16 that are continuously peeled off increases, and the growth The degree of mutual adhesion between the substrate 13 and the substrate maintenance body 12 is increased, and the degree of mutual peeling of the continuously peeled film 14 is improved. As a result, the peeling time is accelerated; and as a result, the quality of the film 14 can be improved.

As a third feature, hydrogen gas is supplied to the first compartment 200. For example, hydrogen gas diffuses in the peeling region because the strain deformation of the interstice of the diffusion part increases, and the crystal lattice between the thin film of gallium nitride (GaN) and epitaxial film (epitaxial film) The "buffer layer" of the peeling regions with different numbers of lattices has a further increased degree of defection, which can achieve high-speed cleavage of the peeling of the film 14 from the growth substrate 13 and the improvement of the quality of the film 14 Two aspects. The peeling system refers to the nature and phenomenon of cracking in the direction where the bonding force is weak.

As a fourth feature, the thin film support 15 is provided with an elastic strain deformation portion 17. By raising the first gas pressure higher than atmospheric pressure, the elastic strain deformation section 17 is raised "upward in the cross-sectional view of FIG. 1", and the cracking of the thin film 14 peeled from the growth substrate 13 can be accelerated. The elastic strain deformation section 17 can be made by thinking about the thickness and shape of the film support 15, for example, a cut-out portion 18 is one example. The elastic strain deformation section 17 is also simply called a deformation section 17.

As a fifth feature, in the bonding device 20, three supports "transcription support 21, film support 15, and second film support 115 (FIG. 13)" are used, and the film 14 has been peeled off twice; The transcription support 21 is transcribed twice as a reference, and the surface of the peeled film 14 can be reversed. Therefore, a reduction in throughput of the manufacturing operation can be expected. The term “reversal” here means that the cleaved surface “B side” and the opposing surface (opposing surface) that have been peeled off can be set freely with respect to the bonding surface of the transcription material or the bonding surface of the product substrate.

As a sixth feature, the transcription material 23 or the second transcription material 123 can be used as the product substrate 160 of the final product, and it is expected that the quality of the peeled film 14 is improved and the throughput of the manufacturing operation is shortened.

As a seventh feature, turning the peeling device 10 up and down "the film maintenance body 16 turns downwards, and the substrate maintenance body turns upwards", by combining the film maintenance body 16 with the third transcription material "e.g., product substrate" into a group, growth The film 14 peeled off with the substrate is directly transcribed and bonded to the product substrate, and it is expected that the quality of the peeled film 14 is improved and the flow of the manufacturing operation is shortened.

As an eighth feature, the pressure device 50 supplies the most suitable gas pressure to the third compartment of the three compartments "third, fourth, and fifth compartments" of the coupling device 30, and transcribes the film 14 to the transcription material 23. A third gas pressure higher than atmospheric pressure is applied to the third compartment; the fixing of the film 14 and the film support 16 and the fixing of the growth substrate 13 and the substrate holder 12 are confirmed, and as a result, the transcription time can be speeded up And improve their quality.

In FIG. 1, the processed thin film 14 "epitaxial film" is suitable for manufacturing equipment 1, such as various electronic parts shown below and systems equipped with those electronic parts, for example: solar cell module (solar cell module) , LED lamp; LED light bulb, display "plasma display panel (PDP, plasma display panel), liquid crystal display (LCD, liquid crystal display), organic light-emitting diode (organic light-emitting diode) ", Semiconductor laser" semiconductor laser (semiconductor laser), semiconductor diode (semiconductor diode) ", optical image sensor (optical image sensor)" photonic imager (Photonic Imager) ", 2D / 3D projection display device (2D / 3D projection display), virtual reality. Three-dimensional projection display "Quantum Photonic Imager (Quantum Photonic Imager), virtual reality display (virtual reality display; VR), augmented reality display (Augmented Reality display; AR), mixed reality display (Mixed Reality display; MR) , Substitutional Reality display (SR), non-volatile memory display (NAND flash memory) and other non-volatile memory display (non-volatile memory display) and its system "solid-state hard drive (solid state drive; SSD) ". The product substrate 160 (FIG. 19, FIG. 25, and FIG. 28) described later is also the same as the thin film 14, and is suitable for electronic parts and systems equipped with those electronic parts.

In FIG. 1, the peeling device 10 is a mechanism and structure for peeling a thin film 14 that is an epitaxial film made on the surface of the growth substrate 13. The growth substrate 13 and the thin film 14 are made outside the peeling device 10. The peeling device 10 has a substrate holder 12 that supports the growth substrate 13; the peeling device 10 has a substrate holder 11 that supports the substrate holder 12. The substrate support 11 is fixed to a chassis 40 (the fixing place is not shown in the figure). The peeling device 10 has a film holder 16 that adsorbs the film 14 peeled from the growth substrate 13; the peeling device 10 has a film holder 15 that supports the film holder 16; the film holder 15 is attachable and detachable的 方法 连接 atib substrate 11.

The stripping device 10 is equipped with 3 cabins. The first compartment 200 is a space formed by the substrate support 11 and the film support 15; the second compartment 210 is a space formed by the substrate support 11 and the substrate support 12; the third compartment is supported by the film The body 15 and the thin film maintain the space formed by the body 16. The substrate holding body 12 and the film holding body 16 and the growth substrate 13 and the film 14 are arranged in the first compartment 200.

The film support 15 includes an elastic strain deformation portion 17; the elastic strain deformation portion 17 includes a cut-out portion 18. The elastic deformation section 17 and the shear section 18 temporarily elastically deform their shapes in accordance with conditions such as the gas pressure in the first compartment 200. The details will be explained later.

The film support transport mechanism 30 includes a film support moving material 31; the film support moving material 31 transports the "moving" film support 15 between the peeling device 10 and the bonding device 20.

The peeling device 10 includes a pressure device 50 that controls the gas pressure in a plurality of compartments, respectively; the pressure device 50 includes a first pressure device 51 and a second pressure device 52. The first pressure device 51 controls the gas pressure of the second compartment 210 and the third compartment 220, respectively; the second pressure device 52 controls the gas pressure of the first compartment. Furthermore, the pressure device 50 controls the gas pressure of the plurality of compartments of the coupling device 20. In FIG. 1, a plurality of arrow symbols input and output from the pressure device 50 are described, respectively corresponding to the plurality of compartments described in FIG. 1 corresponding to the same arrow symbol. The details of the control pressure of the gas pressure in each compartment will be explained later. In addition, the absolute value is lower than the atmospheric pressure "1 atm, about 1 kgf / cm2", which is defined as negative pressure; the vacuum "0 gas pressure" is also part of the negative pressure range; the absolute value is less than atmospheric "1 atm" The larger gas pressure is defined as positive pressure.

As an embodiment of the present invention, the growth substrate 13 and the thin film 14 have, for example, a heteroepitaxial relationship, and the two have different lattice constants, and therefore have cleavage. Examples of single-crystal substrates include sapphire; silicon-based semiconductors include silicon (Si) and so on. In addition, there are nitride semiconductors such as gallium nitride (GaN); compound semiconductors include silicon carbide (SiC) and gallium arsenide (GaAs). These materials can be selected. The thin film 14 is an epitaxial layer that grows from the growth substrate 13, and the thickness of the thin film 14 "thickness of the layer" is from submicron to 10 microns (micron) "μm"; It is also possible to grow GaN epitaxial thin films. The product substrate 160 described later can also be selected from the same material as the growth substrate 130. The product substrate 160 is more than 10 times thicker than the thickness of the thin film 14 and is from about 10 microns to 500 microns.

In FIG. 1, the binding device 20 is a mechanism and structure for transcribing the peeled film 14 to the transcription material 23. The film support 15 contains the film 14 adsorbed on the film holding body 16 in the peeling device 10, and is transcribed into the transcription material 23 in the bonding device 20. The coupling device 20 has a transcription support 21 that supports the transcription maintenance body 22; the transcription support 21 is fixed to the cabinet 40 (the fixing place is not shown in the figure). The bonding device 20 has a first slider 130 that supports the film support 15; the film support 15 uses the one slider as a medium, and is connected to the transcription support 21 so as to be attachable and detachable.

The coupling device 20 is provided with three compartments; the fourth compartment 300 is a space formed by the transcription support 21 and the film support 15 and the first slider 130; the fifth compartment 310 is provided by the transcription support 21 and the transcription material 23 and the space formed by the transcription maintenance body 22; the third compartment is a space formed by the film support 15 and the film maintenance body 16. In the fourth compartment 300, the transcription material 23 and the film maintenance body 16, and the transcription maintenance body 22 and the film 14 are arranged.

The pressure device 50 controls the gas pressure in a plurality of compartments, respectively. The first pressure device 51 controls the gas pressure in the third compartment 220. Details of the control of the gas pressure in the third compartment 220 will be described later.

The combination device 20 is provided with a gas manometer 120; the gas manometer 120 monitors the gas pressure in the fifth compartment 310.

FIG. 2 is an enlarged view of the peeling device 10. In the peeling apparatus 10, the substrate support 11 is arranged on the ground E side, and the film support 15 is arranged on the sky side with the ground E in the gravity direction G as a reference. The peeling device 10 of FIG. 2 further discloses a plurality of other parts (not shown) of FIG. 1. The stripping device 10 includes a first sealer 60, a third sealant 62, and a second sealant 61 that seal individual gas pressures of the plurality of compartments "first, second, and third compartments"; The device 10 has a heater 90 that elastically deforms the substrate holder 12 by heating the substrate holder 12; the peeling device 10 has an infrared localized heater 91; the peeling device 10 has an ultrasonic flaw detector (ultrasonic) flaw detector) 81; the peeling device 10 has a camera 170; the peeling device 10 has an acoustic emission measuring instrument 80. The heater 90 slowly bends the substrate holder and the growth substrate 13 to apply a convergent external force to the periphery of the growth substrate 13 and the boundary surfaces of the growth substrate 13 and the film 14 Alternatively, an infrared local heater 91 such as a laser may be added to the side of the growth substrate 13 near the film 14. With the ultrasonic flaw detector 81, an ultrasonic impact may be applied to the boundary surface of the growth substrate 13 and the film 14. With these components, a crack is generated around the film 14; with the camera 170, the audio emission measuring device 80, and the ultrasonic flaw detector 81, the crack and its position and the degree of the crack are monitored. The acoustic emission measuring device 80, when the material is deformed or destroyed, the elastic energy stored inside becomes a phenomenon of sonic ejection, which is monitored by a piezoelectric sensor (piezoelectric sensor), etc. Based on these monitoring values, the control device "not shown" It can control heater 90 and so on. The peeling device 10 has a connector 70 that movably connects the substrate support 11 and the film support 15, a connector 72 that connects the film support 15 and the film support 16, and connects the substrate support 11 and the substrate support 12 Connector 71; the connector 71 has the characteristic of flexibly responding to the bending of the substrate maintaining body 12.

Fig. 2 reveals that the deformation amount Z1 of the film support 15 is deformed on the sky side "the opposite side of the gravity direction G" "represented by a dotted line", and the deformation amount Z1 is about 0.3 millimeters (mm) to 0.5 millimeters. Since the deformation section 17 of the film support 15 is also connected by the connector 72, the same effect as the amount of deformation Z1 can be obtained; the peeled film 14 is attached to the film maintenance body 16 at the same time as the negative pressure effect of the third compartment 220 Go to the sky side. The film support 15 is, for example, stainless steel (stainless steel).

Fig. 2 reveals that the pressure device 50 supplies the most suitable gas pressures of the three compartments "1st, 2nd and 3rd compartments" individually. In the first compartment 200, a first gas pressure "positive pressure greater than the absolute value of atmospheric pressure" higher than atmospheric pressure "about 1 kilogram force per square centimeter (kgf / cm ² )" is applied. Preferably, a gas pressure of 1.5 is applied ~ 3 Gas pressure. The deformation section 17 of the membrane support 15 is based on the differential pressure of the gas pressure of the first compartment "1.5 to 3 gas pressure" and the corresponding gas pressure outside the membrane support 15 "for example, gas pressure = 1 atmosphere" (differential pressure) gas pressure "0.5 ~ 2 gas pressure" and deformed. In addition, the gas pressure outside the film support 15 may be controlled by the pressure device 50. By controlling the gas pressure outside, a wide range of differential pressure gas pressure can be controlled. To the second chamber 210, a second gas pressure "negative pressure smaller than the absolute value of atmospheric pressure" that is lower than atmospheric pressure is applied, ideally, 0 gas pressure "vacuum" is applied; to the third chamber 220, a pressure greater than atmospheric pressure is applied. The low third gas pressure "negative pressure smaller than the absolute value of atmospheric pressure" is ideally applied with 0 gas pressure "vacuum" to 0.8 gas pressure; the film 14 peeled off by the negative pressure is attracted to the third compartment. After the cracking starts, a differential gas pressure of the first gas pressure and the third gas pressure is applied to both sides of the film 14, the differential gas pressure is set to at least 1.1 gas pressure, thereby improving the continuous peeling of the film 14 and the film support The mutual adsorption degree of 16, and by increasing the mutual adsorption degree of the growth substrate 13 and the substrate maintenance body 12, the mutual peeling degree of the continuously peeling film 14 is increased, as a result, the peeling time can be expected to be quick; Furthermore, by controlling the setting of the differential pressure gas pressure, the quality of the membrane 14 can be expected to improve. Moreover, by controlling the gas pressure outside, the setting range of the third gas pressure and the differential pressure gas is widened, and the setting range of the deformation amount of the film support 15 is expanded; that is, by the first compartment 200 1 The combination of the gas pressure, the third gas pressure of the third compartment 220 and the outside gas pressure, the peeling time of the film 14, the improvement of the quality of the film, and the individual setting range of the deformation amount of the deformation section 17, can be used as needed The intention of the person is set. Furthermore, the combination of the thermal shock caused by the heater 90 or the infrared local heater 91, or the acoustic shock "mechanical shock" caused by the ultrasonic flaw detector 81, and the first gas pressure of the first compartment 200, The individual setting range of the peeling time of the film 14 and the improvement of the film quality can be set according to the user's intention.

FIG. 3 is a diagram illustrating the state of the peeling device 10 during non-heating; FIG. 4 is a diagram illustrating the state of the peeling device 10 during heating. The substrate holder 12 has a plurality of holes 24 penetrating through it, and the growth substrate 13 is attracted by the negative pressure of the second chamber 210; the film holder 16 has a plurality of holes 25 penetrating through the film holder 16 It consists of two layers of porous metallic pads 100 and carbon nano pads 101 stacked on top of each other; with the negative pressure of the third compartment 220, the membrane support 16 contains porous metal pads 100 With carbon nano pad 101 "as a medium, the peeled film 14 is adsorbed. The thickness of the portion of the film holding body 16 having a plurality of holes 25 is 5 mm; the plurality of holes 25 of the film holding body 16 and the holes 2 mm in diameter "2 mm diameter" spread out on the array in units of 4 mm Configuration; the thickness of the part of the porous metal pad 100 having a plurality of holes 25 is 1.5 mm, the plurality of holes 25 of the porous metal pad 100, the 20 micrometer holes "2 micrometer diameter" are deployed on the array in units of 50 micrometers ; As described later, carbon nano mats made of fibrous microfibers or nanofibers have a micron unit "micron (μm) unit diameter" or a nanometer unit "nano (ηm ) Unitary diameters "multiple fine holes. The thin film support 16 and the porous metal pad 100 have satisfactory electrical conductivity, and can prevent electrostatic discharge damage of the thin film 14 during peeling. The film holder 16 and the carbon nano-pad 101 are configured to hold the porous metal pad 100; the film holder 16 is made of aluminum or its alloy, brass, steel, steel, and stainless steel) selection; the porous metal pad 100 is selected from copper, aluminum, or alloys made of the main component thereof, and is expected to be a good material for heat conduction. Carbon nano pad 101 is expected to be made of fibrous microfiber or nanofiber; its shape can be selected from pad, sheet, and cloth ; Can be selected from microfiber carbon nanotubes, carbon nanofibers, carbon fiber-blended carbon fiber blended cellulose nanofibers, etc. These substances have the excellent characteristics that the linear thermal expansion coefficient is smaller than that of glass fiber and the elastic modulus is higher than that of glass fiber, and it is expected that the quality of the film 14 will be improved.

The state of the peeling device 10 during non-heating in FIG. 3 will be described. There is a gap Z3 of about 0.1 mm between the film 14 and the film maintenance body 16 "containing porous metal pad 100 and carbon nano pad 101". As shown in FIG. 2, gas is supplied to the first compartment 200 For the gas, dry air, inert gas (nitrogen) (N ₂ ), and activated gas (hydrogen gas) (H ₂ ) can be used. The Bohr radius of hydrogen atoms (Bohr radius) αb = 0.0539 nanometers (nm) is the smallest of the atoms; the lattice constant of gallium nitride (GaN) is a sufficient lattice constant of 0.539 nanometers through hydrogen atoms M; the lattice constant of silicon is 0.5431 nm; the defect lattice accelerates the diffusion of hydrogen atoms. The hydrogen atom "H ₂ " invades the area where the surface of the growth substrate 13 and the surface of the peeling film 14 are in contact with each other using the gap Z3 and the thin film 14, and the lattice pattern contained in this range is peeled off with different lattice patterns Area "buffer", and spread out, the smaller the Bohr radius of the atoms, the larger the diffusion coefficient, and the hydrogen atom will cause the film 14 to peel off from the growth substrate 13 and the crack start time is earlier, and further, because It is also possible to shorten the period of time during the cracking by early completion of the cracking. In addition, the gas supplied to the first compartment 200 may also be helium (He); furthermore, the gas supplied to the first compartment 200 may also be a Boer radius smaller than that of the film A mixture of atomic or molecular gases and other gases. In addition, the gap Z3 of 0.1 mm or less, from the viewpoint of the adsorption performance of the film 14 on the film maintenance body 12, work in the direction to offset the deformation Z1 "0.3-0.5 mm" of the film support 15; However, it can be overcome by controlling the setting of the differential pressure gas pressure as described above. In addition, it is also possible to supply nitrogen instead of hydrogen. In the case of supplying dry air instead of hydrogen, the gap Z3 may be made 0.0 mm.

In addition, although the gas supplied to the first compartment 200 is hydrogen, it may also be a hydrogen atom generated by platinum or palladium catalysis in the compartment, which diffuses faster than the hydrogen molecule H ₂ diffusion. A gas with a Bohr radius smaller than the lattice constant of the growth substrate 13 and the peeling film 14 can shorten the peeling time of the thin film 14.

In addition, the first chamber 200 in the manufacturing facility 1 or the peeling device 10 may be equipped with a support as a supported catalyst at the time of hydrogen addition, and the metal used as the catalyst may be selected. Platinum black, "black powdered platinum," palladium black, "submicron level (submicron level) obvious irregularities attached to the surface", palladium on carbon; Pd / C) "Adsorption of ultrafine particles of palladium metal on activated carbon". As a support, zeolite is ideal; turning hydrogen molecules into 2 hydrogen atoms (2H) "heavy hydrogen (deuterium)" can be expected to accelerate further diffusion. When the support is equipped in the case of manufacturing equipment 1, it is preferable that the support is equipped in the gas supply mechanism as shown in FIG. 2; when the support is equipped in the first compartment 200, it is more ideal As shown in FIG. 3, the movable equipment is provided between the film holding body 16 and the film 14 with a "gap Z3". Before the substrate holding body 12 is heated, the movable support is detached from the gap Z3.

In FIG. 4, the state of the peeling apparatus 10 at the time of heating is demonstrated. The substrate holding body 12 and the growth substrate 13 are heated by the heater 90 to 200 ° C. or lower, and are gradually bent. As a result, the peripheral edges of the growth substrate 13 begin to crack, and a gap Z2 is generated. The gap Z2 means the peeling of the thin film 14 from the growth substrate 13.

FIG. 5 is an enlarged cross-sectional view of the film support 15, revealing the deformation section 17 and the shear section 18, and the thickness of the film support 15. The stainless steel film support 15 has a basic thickness t0 of stainless steel "standard thickness of undeformed part"; the deformation section 17 contains a thickness t1 to t4 which is thinner than t0 "however, t2 shows a gap of groove width", plural The thickness of each thickness t1 to t4, as the inequality sign described later means "t4 <t3 <t2 <t1"; the shear section 18 includes the thinnest thickness t4. The shearing section 18 is arranged outside the second sealing material 61, that is, the shearing section 18 is arranged corresponding to the first compartment 200; the shearing section 18 is arranged corresponding to the outside of the film support 15. The shear section 18 is a hole made by shearing a part of the stainless steel material in the thickness direction. Groove. Steps, etc., that is, where stress concentration is most likely to appear. The shear section 18 has 2 grooves; as the structure of the deformation section, the most effective structure for the deformation Z1 "0.3 mm to 0.5 mm" is the depth of the groove equivalent to t0-t4 "Y axis in FIG. 5 Direction ", and the width of the groove corresponding to t2" X-axis direction in FIG. 5 ". The range 19 of the deformation section 17 shown in FIG. 5 is approximately 200 mm in diameter. Therefore, the diameters of the film holder 16 and the film 14 and the growth substrate 13 are smaller than 200 mm, for example, t0 = 10 mm, t1 = 6 Mm, t2 = 5 mm, t3 = 4 mm, t4 = 2 mm, which is ideal.

FIG. 6 is a top view of the film support 15; FIG. 6 reveals the shape of the shearing section 18 centering on the hollow section that supplies gas pressure to the third compartment 220. The cavity portion of FIG. 6 is represented by a circle. For example, a wafer-shaped growth substrate 13 such as silicon, the shape of the film 14 corresponds to the shape of the wafer, and the film support 15 of FIG. 6 corresponds to the shape of the film 14 ; The shape of the product substrate 160 also corresponds to the shape of the wafer. FIG. 7 is a top view of the film support 15A of the modified example of the film support 15 of FIG. 6. In the following FIG. 7, only differences from FIG. 6 are explained. The shearing section 18A of FIG. 7 is in a rectangular shape. For example, a rectangular shaped growth substrate 13 such as a display, the shape of the film 14 corresponds to the rectangular shape, and the film support 15A of FIG. 7 corresponds to the shape of the film 14; the shape of the product substrate 160 also corresponds to this Rectangular shape. That is, it is related to the shape of the electronic component. Furthermore, the range 19A of FIG. 7 corresponds to the range 19 of FIG. 6.

8 to 10 are enlarged cross-sectional views of thin film supports 15B, 15C, and 15D with different structures from FIG. 5; in FIGS. 8 to 10, the same symbols are used for the same elements as in FIG. 5 and are omitted. Repeated description; Figures 8 to 10 individually disclose the thickness of the deformation sections 17B, 17C, 17D and the film support 15B, 15C, 15D. In FIG. 8, the stainless steel film support 15B has a basic thickness t5 of stainless steel; the deformation section 17B contains a thinner thickness t6 than t5; a plurality of thicknesses t5 and t6 are indicated by unequal signs; the thickness t6 The stainless steel material is of curved construction. In Fig. 9, the stainless steel film support 15C has a basic thickness t7 of stainless steel; the deformation section 17C contains a thickness t8 to t10 that is thinner than t7; a plurality of thicknesses t7 to t10. t10 <t9 <t8 <t7 >>; the deformation section 17C is a structure with a thickness gradually thinning from t8 to t10. In FIG. 10, the stainless steel film support 15D has a basic thickness of stainless steel; the deformation section 17D contains thicknesses t11 and t12 that are thinner than the basic thickness, and contains a spring 110 as an elastic body. A plurality of thicknesses t11 and t12, as the inequality sign described later means "t12 <t11"; the deformation section 17D is a structure in which the amount of deformation Z1 is obtained by the combination of the thicknesses t11, t12 and the spring 110. Moreover, the spring (spring) 110 is an example of an elastic body.

11 and 12 disclose cross-sectional views of the bonding device 20 including the film support 15. The coupling device 20 is equipped with an up and down mechanism 140 that can move the transcription support 21 up and down along the heaven and earth direction "gravity direction G"; the coupling device 20, relative to the transcription support 21, is equipped with a film support The body 15 and the first slider 130 have a bearing 131 that slides each along the gravity direction G. FIG. 11 shows that the peeled film 14 is adsorbed on the film support 15 on the film support 16 and is set in the first state of the transcription support 21. FIG. 12 shows the second state in which the transcription support 21 rises to the sky side by the up-down mechanism 140 and the film 14 and the transcription material 23 are in contact. With the camera 170, the distance between the film 14 and the transcription material 23 is monitored to control the up and down mechanism 140; after the distance between the film 14 and the transcription material 23 reaches a predetermined value, the gas pressure of the third compartment 220 is controlled from negative pressure to positive Pressure to transcribe the film 14 to the transcription material 23; the gas pressure gauge 120, by monitoring the gas pressure in the fifth compartment 310, indirectly grasp the transcription status, control the gas pressure in the third compartment 220 or the up and down mechanism 140; The gas pressure supply port in the fourth compartment 300 is not shown. A pressure device 50 is connected to the supply port. The pressure device 50 adjusts the gas pressure in the fourth compartment 300 when the transcription support 21 rises in the skyward direction. Furthermore, the gas pressure in the fourth compartment 300 can be linked to the gas pressure in the third compartment 220. For example, the gas pressure in the third compartment 220 can be controlled from negative pressure to positive pressure to change the membrane 14 Transcribed to the transcription material 23; at this time, the gas pressure in the fourth compartment 300 is controlled to a negative pressure, whereby the transcription quality and transcription speed can be expected to increase. In addition, the gas pressure in the fourth compartment 300 and the gas pressure in the third compartment 220 may be controlled by only negative pressure. The difference between the gas pressure in the fourth compartment 300 and the gas pressure in the third compartment 220 during transcription Gas pressure is important. The transcription material 23 is preferably: a film or narrow tape support "substrate", and a carbon nanotube or graphene is arranged in a vertical direction relative to the support Transcription material with fiber structure that can be adsorbed and peeled off. The transcription material 23 does not use an adhesive, and the thin film 14 is adsorbed by the Van der Waals force of work between atoms or molecules. Therefore, the transcription material 23 can prevent the contamination of the thin film 14; the conductive transcription material 23 prevents electrostatic discharge damage of the thin film 14. Therefore, the transcription material 23 can improve the quality of the thin film 14; the transcription material 23 can be reused. Therefore, the transcription material 23 is useful for cost reduction. Furthermore, the film or narrow tape support "substrate" has a microlevel sucker function, which can be adsorbed and peeled off, so it is also possible to choose a reusable transcription material 23 . The transcription material 23 can also replace the product substrate "sapphire"; silicon (Si), gallium nitride (GaN), silicon carbide (SiC) or gallium arsenide (GaAs), etc. ".

13 and 14 show cross-sectional views of the bonding device 20 including the second film support 115. The coupling device 20, instead of the film support 15 of FIGS. 11 and 12, has a second film support 115; the coupling device 20, which is equipped with a second film support 115 and a second slider 150 with respect to the transcription support 21, has Bearings that slide these in the direction of gravity G; the coupling device 20 has a second film support 115 and a second transcription material 123, and a second film holder 116, and the second film holder 116 is a connector, which is attached to the first 2 The film support 115 and the second slider 150 are maintained there; the second slider 150 has a hole 151 therethrough. The second transcription maintaining body 122, using the hole 151 as a medium, is controlled to a negative pressure in the pressure device 50, and is adsorbed at the second slider 150; the coupling device 20 including the second film support 115 has a second film support The sixth compartment 320 made of the body 115, the second slider 150, the second transcription maintaining body 122, and the second transcription material 123; the second film maintaining body 116 is disposed in the sixth compartment 320. The second membrane support 115 has a hole 153, for example, the first pressure device 51 (see FIG. 1) included in the pressure device 50, and uses the hole 153 as a medium to control the gas pressure of the sixth chamber 320. The fourth compartment 300 is created by the transcription support 21, the second slider 150, the second transcription maintenance body 122, and the second transcription material 123. Manufacturing facility 1, equipped with a second film support transport mechanism 230 equipped with a second film support 115 attaching and detaching coupling device 20; the second film support transport mechanism 230 contains a second film support moving material 231; The second film support 115 is connected to the second film support moving material 231.

FIG. 13 shows the first state where the second thin film support 115 is set on the transcription support 21. This first state is the state of the film 14 combined with the transcription material 23 shown in FIG. 12; FIG. 14 shows that the transcription support 21 rises toward the sky side by the up-down mechanism 140, and the film 14 and the second transcription material 123 are connected. The second state; monitor the distance between the film 14 and the second transcription material 123 by a camera (not shown) to control the up and down mechanism 140; after the distance between the film 14 and the second transcription material 123 reaches a predetermined value, to The hole 153 of the second film support 115 is a medium, and the gas pressure of the sixth chamber 320 is controlled from negative pressure to positive pressure, and the film 14 is transcribed to the second transcription material 123. The gas pressure gauge 120 monitors the gas pressure in the fifth compartment 310 by indirectly grasping the transcription status, and controls the sixth compartment 320 or the up-down mechanism 140; The hole 153 of the body 115 is connected to the pressure device 50; the pressure device 50 adjusts the gas pressure in the sixth compartment 320 when the transcription support 21 rises to the sky side. Furthermore, the gas pressure in the fourth compartment 300 can be linked to the gas pressure in the sixth compartment 320, for example, to control the gas pressure in the sixth compartment 320 from negative pressure or atmospheric pressure to positive pressure, The film 14 is transcribed on the second transcription material 123; at this time, the gas pressure in the fourth compartment 300 is controlled to a negative pressure, and then, through these operations, the improvement in transcription quality and transcription speed can be expected. In addition, the gas pressure in the fourth compartment 300 and the gas pressure in the sixth compartment 320 can also be controlled to only negative pressure, negative pressure and atmospheric pressure, negative pressure and positive pressure, atmospheric pressure and positive pressure, or only positive pressure; transcription The differential gas pressure between the gas pressure in the fourth compartment 300 and the gas pressure in the sixth compartment 320 at that time is important. The second transcription material 123 is preferably a film or narrow tape support "substrate", and a carbon nanotube or graphene is arranged in a vertical direction relative to the support ) Transcription material with fiber structure that can be adsorbed and peeled off. The second transcription material 123 does not use an adhesive, and absorbs the thin film 14 by the Van der Waals force of work between atoms or molecules. Therefore, the second transcription material 123 can prevent the contamination of the thin film 14; it has conductivity The second transcription material 123 prevents electrostatic discharge damage of the film 14, so the second transcription material 123 can improve the quality of the film 14; the transcription material 23 can be reused, so the second transcription material 123 is reduced The cost is useful. Since the design value of the adsorption force of the second transcription material 123 is larger than that of the transcription material 23, transcription from the transcription material 23 of the film 14 to the second transcription material 123 can be easily realized. Furthermore, the film or narrow tape support "substrate" has a microlevel sucker function and can be adsorbed and peeled off, so the second transcription material 123 that can be reused is also selected Yes. The second transcription material 123 can also replace the product substrate sapphire; silicon (Si), gallium nitride (GaN), silicon carbide (SiC) or gallium arsenide (GaAs) )Wait".

15 to 19 disclose the first to fifth states in which the manufacturing equipment of the present invention "FIGS. 2 to 14" processes the thin film. 15 is a state in which the growth substrate 13 and the film 14 are loaded on the peeling device 10 of FIG. 2; the film 14 has an A surface and a B surface on the opposite side of the A surface corresponding to the surface of the growth substrate 13, for example For example, the A surface represents a P-type layer (P-type layer), and the B surface represents an N-type layer (N-type layer); for example, on the first compound semiconductor InP substrate "Growth Substrate", the 2 In the case of compound semiconductor InAsxP1-x "x = 0.05, 0.10, 0.15, 0.20, 0.25, 0.30", a complex composition gradient layer "complex thin film", the A side represents the first layer "Last Layer; x = 0.30; InAs0.30P0.70 ", the B-side represents the second layer" x = 0.05; InAs0.05P0.95 "; for example, on a sapphire growth substrate, gallium nitride , Indium Nitride (InN; Indium Nitride), and these mixed crystals, with the most appropriate structure, sequentially stacked and grown III-V nitride semiconductor (III-V nitride semiconductor) epitaxial wafer (epitaxial wafer), the A side represents the aluminum gallium nitride (AlGaN; aluminum gallium nitride) layer, medium Gallium nitride layer (gallium nitride) layer, B is an aluminum gallium nitride layer surface.

FIG. 16 shows the state in which the film 14 is maintained in the film maintenance body 16 in the peeling device 10; the A surface and the B surface are reversed with respect to FIG. 15. FIG. 17 shows the state in which the film 14 is transcribed into the transcription material 23 in the bonding device 20; the A side and the B side are turned forward with respect to FIG. 15. FIG. 18 shows the state in which the film 14 is transcribed into the second transcription material 123 in the bonding device 20; the A side and the B side are reversed with respect to FIG. 15. FIG. 19 shows the state in which the thin film 14 is transcribed onto the product substrate 160; the A side and the B side are turned forward relative to FIG. 15. The plane A and the plane B can be appropriately selected in accordance with the device design structure standard (for example, FIG. 19; the first device design structure standard) including the thin film 14 required by the semiconductor device mounted in the electronic device. In addition, the device design structure of FIG. 16 or FIGS. 18 to 19 can be realized; when the second device design structure standard is opposite to the first device design structure standard, starting from FIG. 17, it is the same as A and B of FIG. 19. The opposite design and construction of the device can be achieved.

FIG. 20 is a modified example of the peeling device 10 disclosed in FIGS. 2 and 3. In the peeling device 10A disclosed in FIG. 20, the substrate holder 12 and the film holder 16 are inverted relative to FIG. 3; furthermore, the film holder 16 uses the hole 25 as a medium, and the third transcription material 124 is adsorbed and maintained at this position. The film 14 is transcribed to the third transcription material 124; in other words, the film 14 uses the adsorbed third transcription material 124 as a medium, and is indirectly maintained on the film maintenance body 16. On the other hand, the thin film support body 16 of FIG. 3 directly attracts the porous metal pad 100, the carbon nano pad 101, and the thin film 14 to be maintained there. In the peeling device 10A disclosed in FIG. 20, when the film 14 is peeled from the growth substrate 13 and transcribed to the third transcription material 124, gravity is used; when the first compartment 200 is controlled to atmospheric pressure, the gravity can act more effectively. The third transcription material 124 can also replace the product substrate "sapphire"; silicon (Si), gallium nitride (GaN), silicon carbide (SiC) or gallium arsenide (GaAs) )Wait". Corresponding to the peeling device 10A disclosed in FIG. 20, the bonding device 20 disclosed in FIG. 1 is also reversed; and the peeling device 10A disclosed in FIG. 20 is a diagram illustrating a state when it is not heated.

The substrate holding body 12 of the peeling device 10A disclosed in FIG. 20 has a heater 90 relative to the substrate holding body 12 of FIG. 3, is composed of a first metal 112 and a second metal 113, and has a bimetal. The first metal 112 and the second metal 113 have mutually different expansion coefficients with respect to temperature; the bimetal can also replace the substrate holder 12 of FIG. 3, and the other is the same as described above.

FIG. 21 illustrates the state of the peeling device 10A during heating in FIG. 20. The substrate holding body 12 and the growth substrate 13 are heated by a bimetal composed of the first metal 112 and the second metal 113 to below 200 ° C and slowly bend; as a result, the peripheral edge of the growth substrate 13 begins Cracking generates a gap Z2; the gap Z2 means the peeling of the thin film 14 from the growth substrate 13; the others are the same as described above.

22 to 25 disclose the sixth to ninth states of the thin film processing apparatus of the present invention "FIG. 20 and FIG. 21" to process the thin film. FIG. 22 shows a state in which the growth substrate 13 and the film 14 are loaded on the peeling device 10A of FIG. 20. As in FIG. 15, the film 14 has an A surface and a B surface. FIG. 23 shows the state where the film 14 is transcribed to the third transcription material 124 in the peeling device 10A, and the A surface and the B surface are reversed with respect to FIG. 22. FIG. 24 shows a state where the film 14 and the third transcription material 124 are unloaded from the peeling device 10A "manufacturing equipment 1". FIG. 25 shows a state where the back surface of the third transcription material 124 is polished. After the third transcription material 124 is polished, a part of it becomes the product substrate 160. The device design structure criterion including the thin film 14 required by the semiconductor device mounted on the electronic device can be used when the second device design structure criterion "device design structure opposite to the planes A and B of FIG. 19".

FIGS. 26 to 28 disclose the tenth to twelfth states of the processing apparatus of the present invention, “the state in which the film holding body 16 of FIG. 20 is provided in the bonding device 20 reversed upside down”. FIG. 26 shows the state after moving from the state of FIG. 23 to the bonding device 20; as in FIG. 23, the film 14 has an A surface and a B surface. FIG. 27 shows the state in which the film 14 is transcribed to the fourth transcription material 125 in the bonding device 20, and the film 14 and the fourth transcription material 125 are unloaded from the bonding device 20 "Manufacturing Equipment 1"; side A and side B , Relative to Fig. 26, is reversed. FIG. 28 shows a state where the back surface of the fourth transcription material 125 is polished. After the fourth transcription material 125 is polished, a part of it becomes the product substrate 160. The device design structure criterion including the thin film 14 required by the semiconductor device mounted in the electronic device can be used when the first device design structure criterion "device design structure of the A and B surfaces in FIG. 19" is mentioned above.

29 to 31 disclose the control method and steps of the manufacturing equipment. Fig. 29 is a method of controlling the macroscopic perspective of the manufacturing equipment; Fig. 30 is a method of controlling the macroscopic perspective of the peeling device; and Fig. 31 is a method of controlling the macroscopic perspective of the device.

In FIG. 29, step S100 is to provide a film support in the peeling device; step S200 is to process the film peeling of the growth substrate; step S300 is to set the film support to maintain the peeled film in the bonding device; step S400 is the film Transcription to the combined disposal of transcribed material.

The treatment system of FIG. 30 corresponds to step S200. In FIG. 30, step S210 is that the growth substrate and the film are loaded on the peeling device, and related to FIG. 20, the third transcription material 124 is provided at the film holding body 16; step S220 reveals the individual compartments of the first to third compartments Control of gas pressure; step S221 applies individual gas pressures in the second and third compartments, including vacuum-containing negative pressure, atmospheric pressure, and positive pressure greater than atmospheric pressure; step S225 applies gas pressure to the first compartment, It includes negative pressure, atmospheric pressure, and positive pressure greater than atmospheric pressure; step S230 applies gas to the first compartment. Furthermore, there is no difference in the order of step S220 and step S230; step S240 applies heat to the substrate holder to deform the substrate holder.

The treatment system of FIG. 31 corresponds to step S400. In FIG. 31, step S410 is that the film support that maintains the peeled film is provided to the bonding device by a film support transport mechanism (carry mechanism) 30. Step S420 reveals that when individually controlling the gas pressure and the gas pressure gauge of the plurality of chambers formed by the bonding device, and the up-down mechanism, the film is transcribed to the first bonding process of the transcription material 23, and this bonding process is performed by controlling the up-down mechanism, Apply the gas pressure "vacuum, positive gas pressure" in the third compartment 220. In step S430, the second film support 115 replaces the film support 15 by the second film support transport mechanism 230, and is installed in the coupling device 20, whereby the second transcription support 122 is attracted to the second slider 150 Office. Step S440 reveals that the film transcribed to the transcription material 23 is further transcribed to the second binding treatment of the second transcription material 123 when individually controlling the gas pressure and the gas pressure gauge of the plural chambers formed by the combining device, and the up-down mechanism. The process of the combined treatment is controlled by the up and down mechanism, and the gas pressure "positive gas pressure" is applied in the sixth compartment 320. Steps S450 and S460 correspond to FIGS. 18 and 19, and the film transcribed to the second transcription material 123 is transcribed to the product substrate. In addition, the device design structure standard (first and second device design structure standard) including the thin film 14 corresponding to the requirements of the semiconductor device mounted on the electronic device can be compared with the aforementioned FIGS. 15 to 19, 22 The variations of FIGS. 25 and 26 to 28 are reflected or incorporated in individual steps.

The embodiments of the present invention have been described above, but the present invention is not limited to the aforementioned embodiments, and other various types can be implemented as long as they do not deviate from the scope of the present invention. For example, the pressure device 50 may be provided with a plurality of pressure devices corresponding to the plurality of compartments including the bonding device 20; and for example, the disclosed negative structure substrate support, substrate support, thin film support, The thin film support, the transcription maintenance body, the transcription support, and the like, although not specified or explicitly stated in this specification, may be combined as appropriate. The technical scope of the present invention is not limited to the foregoing plural embodiments or combinations thereof, and includes the items described in the scope of the patent application and their equivalents or variants.

1‧‧‧ Manufacturing equipment

10. 10A‧‧‧ Stripping device

11‧‧‧Substrate support

12‧‧‧ substrate holder

13‧‧‧ Growth substrate

14‧‧‧ Thin film (epitaxial film)

15, 15A, 15B, 15C, 15D ‧‧‧ film support

16‧‧‧Thin film support

17‧‧‧ (elastic strain) deformation part

18、18A‧‧‧Shearing department

19、19A‧‧‧ (elastic strain) deformation range

20‧‧‧Combination device

21‧‧‧ transcription support

22‧‧‧Transcription maintainer

23‧‧‧ Transcribed material

24, 25, 151, 153‧‧‧ hole

30‧‧‧ film support delivery mechanism

31‧‧‧moving material for thin film support

40‧‧‧chassis

50‧‧‧Pressure device

51‧‧‧First pressure device

52‧‧‧The second pressure device

60‧‧‧The first sealant

61‧‧‧Second sealant

62‧‧‧The third sealant

70, 71, 72 ‧‧‧ connectors

80‧‧‧Audio emission tester

81‧‧‧Ultrasonic flaw detector

90‧‧‧heater

91‧‧‧Infrared local heater

100‧‧‧Porous metal pad

101‧‧‧Carbon Nano Mat

110‧‧‧Spring

112‧‧‧First metal

113‧‧‧Second metal

115‧‧‧Second film support

116‧‧‧Second film maintenance body

120‧‧‧Gas pressure gauge

122‧‧‧ 2nd transcription maintainer

123‧‧‧ 2nd transcription material

124‧‧‧ Third transcription material

125‧‧‧ 4th transcription material

130‧‧‧1st slider

131‧‧‧bearing

140‧‧‧Up and down mechanism

150‧‧‧ 2nd slider

160‧‧‧Product substrate

170‧‧‧Camera

200‧‧‧ First cabin

210‧‧‧ 2nd cabin

220‧‧‧ third cabin

230‧‧‧ 2nd film support delivery mechanism

231‧‧‧The second film support moving material

300‧‧‧ fourth cabin

310‧‧‧ fifth cabin

320‧‧‧ 6th cabin

Z1, Z2, Z3 ‧‧‧ gap

[Fig. 1] An embodiment of the manufacturing equipment for realizing the present invention, "Sectional View". [Fig. 2] This is the first example of the peeling device included in the manufacturing equipment of the present invention. [Fig. 3] An enlarged view of a part of Fig. 2 during non-heating. [Fig. 4] An enlarged view of the application of heat in Fig. 3. [Fig. 5] An enlarged view of the thin film support "first example" of Fig. 2. [Figure 6] The first view of the top view of FIG. 5 (top view). Fig. 7 is a modification of the film support of Fig. 6. [Fig. 8] An enlarged view of the thin film support "second example" of Fig. 2. [Fig. 9] An enlarged view of the thin film support "third example" of Fig. 2. [Fig. 10] An enlarged view of the "4th example" of the film support of Fig. 2. [Fig. 11] This is a conjugation device (first example: in the first state) included in the manufacturing equipment of the present invention. [Fig. 12] This is a conjugation device "first example: in the second state" included in the manufacturing equipment of the present invention. [Fig. 13] This is a conjugation device included in the manufacturing equipment of the present invention (the second example: in the first state). [Fig. 14] This is a conjugation device (second example: in the second state) included in the manufacturing equipment of the present invention. [Fig. 15] A film "at the first state" processed by the manufacturing equipment of the present invention. [Fig. 16] A film "at the second state" processed by the manufacturing equipment of the present invention. [FIG. 17] A film "at the third state" processed by the manufacturing equipment of the present invention. [Fig. 18] This is the film "at the fourth state" processed by the manufacturing equipment of the present invention. [FIG. 19] A film "at the fifth state" processed by the manufacturing equipment of the present invention. [Fig. 20] This is the second example of the peeling device included in the manufacturing equipment of the present invention. [Fig. 21] An enlarged view of the application of heat in Fig. 20. [FIG. 22] A film "at the sixth state" processed by the manufacturing equipment of the present invention. [FIG. 23] It is the film "at the 7th state" processed by the manufacturing equipment of this invention. [Fig. 24] The film "at the eighth state" processed by the manufacturing equipment of the present invention. [FIG. 25] It is the film "at the 9th state" processed by the manufacturing equipment of this invention. [Fig. 26] The film "at the tenth state" processed by the manufacturing equipment of the present invention. [FIG. 27] It is the film "at the 11th state" processed by the manufacturing equipment of this invention. [FIG. 28] It is the film "at the 12th state" processed by the manufacturing equipment of this invention. [FIG. 29] It is the control technique of the manufacturing equipment of this invention. Fig. 30 is a control technique of the peeling device of the present invention. [Fig. 31] It is the control technology of the coupling device of the present invention.

Claims (47)

An electronic device manufacturing facility comprising: a substrate holder including a growth substrate for maintaining a thin film obtained with an epitaxial film, a substrate support for supporting the substrate holder, and a substrate for maintaining the thin film peeled from the growth substrate A film holder, a film support that supports the film holder, a first compartment composed of the substrate support and the film holder, and a second compartment composed of the substrate support and the substrate support, and A peeling device for the third compartment constituted by the film maintenance body and the film support; and a pressure device for applying the first, second, and third gas pressures corresponding to the first, second, and third compartments, respectively. The manufacturing equipment described in item 1 of the scope of the patent application, wherein the gas pressure difference between the first and third gas pressures is applied to the thin film as a feature. The manufacturing equipment according to item 1 of the scope of the patent application, wherein the film support has a deformation section that generates elastic strain due to the first gas pressure as a feature. As in the manufacturing equipment described in item 3 of the patent application scope, the deformation section is characterized by a shear section having grooves in the thickness direction of the film support. The manufacturing equipment as described in item 3 of the scope of the patent application, wherein the thickness of the deformation section is thinner than the thickness of the outer periphery of the deformation section. The manufacturing equipment described in item 3 of the scope of the patent application, in which the film maintenance system is installed in the deformation department as its characteristic. The manufacturing equipment according to item 2 of the patent application scope, wherein the pressure difference between the first gas pressure and the second gas pressure, and the pressure difference between the first gas pressure and the third gas pressure, and the atmospheric pressure is regarded as 1 In the case of gas pressure, it is characterized by 1.3 gas pressure to 3.0 gas pressure. The manufacturing equipment according to item 2 of the scope of the patent application, wherein the second and third gas pressures are negative pressures lower than atmospheric pressure, and the first gas pressure is positive pressures higher than atmospheric pressure. The manufacturing equipment as described in item 2 of the scope of patent application, wherein the first compartment is characterized by being supplied with dry air gas or nitrogen gas. The manufacturing equipment according to item 2 of the patent application scope, wherein the first chamber is supplied with gas having atoms or molecules having a Bohr radius at least smaller than the Bohr radius of the growth substrate or the film . The manufacturing equipment according to item 2 of the scope of the patent application, wherein the first compartment is characterized by being supplied with at least hydrogen gas or helium gas. The manufacturing equipment according to any one of the items 9 to 11 of the patent application range, wherein the semiconductor device or the first compartment is further equipped with a support as a feature. The manufacturing equipment according to any one of claims 2 to 9 of the patent application, wherein the substrate maintenance body further includes a heating department as a feature. The manufacturing equipment as described in item 13 of the scope of patent application, wherein the heating department is characterized by bimetal. The manufacturing facility according to item 1 of the patent application scope, wherein the peeling device further includes a first sealing material that maintains the first gas pressure between the film support and the substrate support. The manufacturing equipment as described in item 15 of the patent application range, wherein the film support is characterized by attaching and detaching from the substrate support by the first sealing material. The manufacturing equipment as described in any one of the first to eleventh, fifteenth and sixteenth items of the patent application scope, wherein the peeling device is further between the film support and the film support, Including the second sealing material that maintains the third gas pressure. The manufacturing equipment according to item 17 of the scope of the patent application, wherein the film holding body is characterized by being able to be attached and detached from the film support by the second sealing material. The manufacturing equipment according to any one of the first to eleventh, fifteenth and sixteenth items of the patent application scope, wherein the peeling device is further between the substrate support and the substrate holder, It includes a third sealing material that maintains the second gas pressure. The manufacturing equipment as described in item 19 of the patent application range, wherein the substrate holding body is attached to and detachable from the substrate support by the third sealing material, and is characterized as such. The manufacturing equipment according to any one of the first to eleventh, fifteenth and fifteenth items of the patent application range, wherein the thin film maintenance body has the thin film maintenance per specific unit area associated with the thin film range The plurality of first holes of the body, and further, the porous metal pad having a plurality of second through holes per specific unit area between the thin film and the thin film maintenance body is larger than the number of the first holes of the complex is Its characteristics. The manufacturing equipment as described in item 21 of the scope of the patent application, wherein the film maintenance body, and further, between the film and the porous metal pad, a more specific unit area per unit area than that of the plurality of second holes Carbon nanomats with multiple third through-holes are characteristic. The manufacturing equipment according to any one of claims 1 to 11, wherein the substrate holder is characterized by being placed on the upper side of the film holder based on the direction of gravity. The manufacturing equipment according to any one of claims 1 to 11 of the patent application range, wherein the film maintenance body uses the third transcription material as a medium and maintains the film as its characteristic. The manufacturing equipment as described in item 24 of the patent application, wherein the third transcription material is a product substrate whose characteristics are. The manufacturing equipment as described in item 1 of the scope of the patent application, wherein the manufacturing equipment further includes a binding device that can be attached to and detached from the film support, and includes a transcription support that supports transcription materials, while maintaining the above It is characteristic that the aforementioned thin film of the thin film support body is transcribed to a transcription material. The manufacturing equipment as described in item 26 of the patent application scope, wherein at least one of the thin film support and the transcription support is a movable type whose characteristics can be changed by changing the distance between them. The manufacturing equipment according to item 27 of the patent application scope, wherein the coupling device further includes a first slider or a bearing as a feature between the film support and the transcription support. The manufacturing equipment as described in item 27 of the patent application scope, wherein the other of the film support and the transcription support is a movable type that can change the distance between each other as its characteristic. The manufacturing equipment as described in item 29 of the scope of the patent application, wherein the above-mentioned coupling device further includes a feature that enables the up-down mechanism of the transcription support to move. The manufacturing equipment as described in any one of patent application items 26 to 30, wherein the third gas pressure applied to the third compartment is characterized by a positive gas pressure higher than atmospheric pressure. The manufacturing equipment according to any one of items 26 to 30 of the patent application range, wherein the combining device includes: a fourth compartment formed by the thin film support and the transcription support, and the transcription material and the foregoing The fifth compartment formed by the transcription support and the gas pressure gauge for measuring the gas pressure of the fifth compartment are characterized. The manufacturing equipment as described in any one of patent application items 26 to 30, wherein the transcription material is a product substrate whose characteristics are. The manufacturing equipment according to item 26 of the patent application scope, wherein the coupling device can be attached to and detached from the transcription support, includes a second film support that supports the second transcription material, and is maintained at the energy of the film of the transcription material Transcribed further to the second transcription material is its characteristic. The manufacturing equipment described in item 34 of the patent application scope, wherein at least one of the second film support and the transcription support is a movable type capable of changing the distance between them as a characteristic. The manufacturing equipment according to item 35 of the patent application scope, wherein the coupling device is further characterized by including a second slider or bearing as a feature between the second film support and the transcription support. The manufacturing equipment as described in item 35 of the patent application scope, wherein the other of the second film support and the transcription support is a movable type that can change the distance between them as its characteristics. The manufacturing equipment as described in item 37 of the patent application scope, wherein the combining device further includes a feature that makes the up and down mechanism of the transcription support activity. The manufacturing equipment as described in item 34 of the patent application range, wherein the bonding device includes the sixth compartment formed by the second film support and the second transcription material as a feature. The manufacturing equipment as described in item 39 of the patent application range, wherein the pressure device is further characterized by a fourth gas pressure that applies a positive gas pressure higher than atmospheric pressure in the sixth chamber. The manufacturing equipment according to item 39 of the patent application scope, wherein the coupling device further includes: a second film disposed between the second film support and the second transcription material and disposed in the sixth compartment Maintain the body as its characteristic. The manufacturing equipment according to item 35 of the patent application scope, wherein the bonding device further includes: maintaining the second transcription material, and a second film disposed between the second film support and the second transcription material Maintain the body as its characteristic. The manufacturing equipment according to item 42 of the patent application range, wherein the coupling device further includes: a second slider disposed between the second film support and the second film holder is a feature. The manufacturing facility according to item 43 of the patent application range, wherein the second slider has a through hole for maintaining the second film maintaining body by the gas pressure supplied by the pressure device. The manufacturing equipment as described in any one of patent application items 34 to 44, wherein the second transcription material is a product substrate whose characteristics are. The manufacturing equipment according to item 26 of the patent application scope, wherein the manufacturing equipment further includes a film support transport mechanism, and the film support transport mechanism includes transporting the film support between the peeling device and the bonding device The moving material of the thin film support is its characteristic. The manufacturing equipment according to item 34 of the patent application scope, wherein the manufacturing equipment further includes a second film support transport mechanism, and the second film support transport mechanism is included between the peeling device and other devices to transport the foregoing The second thin film support moving material of the second thin film support is its characteristic.