TWI649146B - 玻璃基板之製造方法及板狀之玻璃 - Google Patents
玻璃基板之製造方法及板狀之玻璃 Download PDFInfo
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- TWI649146B TWI649146B TW104132504A TW104132504A TWI649146B TW I649146 B TWI649146 B TW I649146B TW 104132504 A TW104132504 A TW 104132504A TW 104132504 A TW104132504 A TW 104132504A TW I649146 B TWI649146 B TW I649146B
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- Prior art keywords
- plate
- shaped glass
- glass
- resin layer
- light
- Prior art date
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- 239000011521 glass Substances 0.000 title claims abstract description 268
- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000011347 resin Substances 0.000 claims abstract description 112
- 229920005989 resin Polymers 0.000 claims abstract description 112
- 239000011342 resin composition Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 49
- 230000003287 optical effect Effects 0.000 claims description 43
- 238000007747 plating Methods 0.000 claims description 34
- 238000005530 etching Methods 0.000 claims description 21
- 238000010521 absorption reaction Methods 0.000 claims description 12
- 238000002834 transmittance Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 19
- 239000010949 copper Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 18
- 229910010413 TiO 2 Inorganic materials 0.000 description 12
- 239000003513 alkali Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910018068 Li 2 O Inorganic materials 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 239000005368 silicate glass Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000006089 photosensitive glass Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 125000006239 protecting group Chemical group 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000006103 coloring component Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010511 deprotection reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/32—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with synthetic or natural resins
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
- H05K3/426—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in substrates without metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/42—Printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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Abstract
本發明之玻璃基板之製造方法具備如下步驟:(I)於板狀之玻璃(10)形成貫通孔(11);(II)使用對特定波長λ1之光具有感光性之樹脂組成物於板狀之玻璃(10)之一主面形成樹脂層(20);(III)自板狀之玻璃(10)之另一主面側照射含有波長λ1之光U而使樹脂層(20)之覆蓋貫通孔(11)之部分感光;(IV)將於步驟(III)中感光之部分去除而形成樹脂貫通孔(21)。板狀之玻璃(10)係於步驟(III)中以樹脂層(20)不被入射至板狀之玻璃(10)之另一主面之光U感光之方式保護樹脂層(20)免受光U影響。
Description
本發明係關於一種玻璃基板之製造方法及供於玻璃基板之製造方法的板狀之玻璃。
習知,例如,作為LSI(Large-Scale Integration)之構裝技術,如非專利文獻1所記載般,已知有使用矽貫通電極(TSV:Through Silicon Via)之構裝技術。具有貫通電極之矽基板例如作為內插器(interposer)被廣泛使用。內插器係對配線之設計規則分別不同之如IC(Integrated Circuit)及印刷基板般端子間距離不同之基板彼此進行中繼的基板。
TSV技術由於除了矽基板價格高以外,還起因於矽為半導體而必須於矽基板形成貫通孔之前後進行絕緣處理,故而具有成本較高之問題。因此,例如,為了降低內插器之成本,而於廉價之玻璃形成玻璃貫通電極(TGV:Through Glass Via)之玻璃基板受到注目。
於TGV技術中,必須於玻璃基板形成貫通孔。作為於玻璃基板形成貫通孔之技術,例如,如專利文獻1所記載般,已知有藉由脈衝振盪YAG雷射之照射而形成貫通孔之技術。又,於專利文獻2中,記載有於感光性玻璃基板形成微細之孔之方法。於專利文獻2所記載之方法中,
於感光性玻璃基板上之特定之位置配置光罩,照射紫外線,形成潛像。其次,對感光性玻璃基板進行加熱處理而使潛像結晶化。其次,於形成有潛像之部分之中央藉由雷射光而形成小於潛像之加工目標孔。其次,藉由氫氟酸而進行蝕刻。藉此,經結晶化之部分被選擇性地蝕刻而形成孔。於專利文獻3中,記載有自板玻璃之兩面藉由相對向之同一軸心上之上下一對取心鑽(core drill)而穿孔為板玻璃之方法。
[先前技術文獻]
[專利文獻]
專利文獻1:日本特開2000-061667號公報
專利文獻2:日本特開2001-105398號公報
專利文獻3:日本特開昭54-126215號公報
[非專利文獻]
非專利文獻1:吉永孝司及野村稔,「三維LSI構裝用之TSV技術之研究開發之動向」,科學技術動向、科學技術、學術政策研究所,2010年4月號,No.109,p.23-34
形成有貫通孔之玻璃基板具有機械強度較低而於加工時難以處理之問題。
因此,本發明之目的在於提供一種製造形成貫通孔且具有較
高之機械強度之玻璃基板之方法。
本發明提供一種玻璃基板之製造方法,其具備如下步驟:(I)於板狀之玻璃形成貫通孔;(II)以使用下述樹脂組成物覆蓋上述貫通孔之方式於上述板狀之玻璃之一主面形成樹脂層,該樹脂組成物對波長120nm~300nm之範圍內之特定波長λ1之光具有感光性;(III)自上述板狀之玻璃之另一主面側照射含有上述波長λ1之光U而使上述樹脂層之覆蓋上述貫通孔之部分感光;及(IV)將上述樹脂層之於步驟(III)中感光之部分去除而形成貫通上述樹脂層之樹脂貫通孔;上述板狀之玻璃其上述波長λ1之光之穿透率為1%以下,且於上述步驟(III)中,以上述樹脂層不被入射至上述板狀之玻璃之上述另一主面之上述光U感光的方式保護上述樹脂層免受上述光U影響。
又,本發明提供一種板狀之玻璃,其係供於上述玻璃基板之製造方法之板狀之玻璃,於上述玻璃基板之製造方法中,上述步驟(I)具備如下步驟:(I-a)藉由對上述板狀之玻璃照射雷射,而於上述板狀之玻璃之照射有雷射之部分形成變質部;及(I-b)藉由使用對上述變質部之蝕刻速率大於對上述板狀之玻璃之未形成上述變質部之部分之蝕刻速率的蝕刻液至少蝕刻上述變質部,而於上述板狀之玻璃形成上述貫通孔;上述雷射具有波長250nm~535nm之範圍內之特定波長λ2,且上述波長λ1之光之穿透率為1%以下,且上述波長λ2之光之吸收係數
為50cm-1以下,使用上述樹脂組成物於該板狀之玻璃之一主面形成樹脂層之後,自該板狀之玻璃之另一主面側照射含有上述波長λ1之上述光U時,以上述樹脂層不被入射至該板狀之玻璃之上述另一主面之上述光U感光之方式保護上述樹脂層免受上述光U影響。
根據本發明,於形成有貫通孔之板狀之玻璃之一主面形成樹脂層,故而經製造之玻璃基板具有較高之機械強度。因此,由本發明之方法而製造之玻璃基板於加工時容易處理。
1a~1e、1ax‧‧‧玻璃基板
10‧‧‧板狀之玻璃
11‧‧‧貫通孔
12‧‧‧籽晶層
20‧‧‧樹脂層
21‧‧‧樹脂貫通孔
30‧‧‧貫通電極
圖1係表示第1實施形態之玻璃基板之製造方法之步驟的剖視圖。
圖2係表示第2實施形態之玻璃基板之製造方法之步驟之一部分的剖視圖。
圖3係表示繼圖2所示之步驟之玻璃基板之製造方法之步驟的剖視圖。
圖4係表示由第2實施形態之製造方法而製造之玻璃基板之使用例的剖視圖。
圖5係表示第3實施形態之玻璃基板之製造方法之步驟的剖視圖。
圖6係表示由第3實施形態之製造方法而製造之玻璃基板之使用例的剖視圖。
以下,一面參照圖式一面對本發明之實施形態進行說明。再者,以下之說明係關於本發明之一例者,本發明並不由該等說明限定。
<第1實施形態>
第1實施形態之玻璃基板之製造方法具備步驟(I)、步驟(II)、步驟(III)、及步驟(IV)。為了步驟(I),如圖1(a)所示,準備板狀之玻璃10。步驟(I)係如圖1(b)所示,於板狀之玻璃10形成貫通孔11的步驟。步驟(II)係如圖1(e)所示,以使用下述樹脂組成物覆蓋貫通孔11之方式於板狀之玻璃10之一主面形成樹脂層20的步驟,該樹脂組成物對波長120nm~300nm之範圍內之特定波長λ1之光具有感光性。步驟(III)係如圖1(f)所示,自板狀之玻璃10之另一主面側照射含有波長λ1之光U而使樹脂層20之覆蓋貫通孔11之部分感光的步驟。步驟(IV)係如圖1(g)所示,將樹脂層20之於步驟(III)中感光之部分去除而形成貫通樹脂層20之樹脂貫通孔21的步驟。
為了步驟(I)而準備之板狀之玻璃10的波長λ1之光之穿透率為1%以下。板狀之玻璃10的波長λ1之光之穿透率越小越好。又,板狀之玻璃10係於步驟(III)中以使樹脂層20不被入射至板狀之玻璃10之另一主面之光U感光的方式,來保護樹脂層20免受光U影響。即,使用對波長λ1之光具有感光性之樹脂組成物而於板狀之玻璃10之一主面形成樹脂層20之後,自板狀之玻璃10之另一主面側照射含有波長λ1之光U時,板狀之玻璃10係能夠以樹脂層20不被入射至板狀之玻璃10之另一主面之光U感光之方式,來保護樹脂層20免受上述光U影響。板狀之玻璃10只
要具有此種特性則並不特別限定。作為板狀之玻璃10,可較佳地使用硼矽酸玻璃、鋁矽酸鹽玻璃、鈉鈣玻璃、含鈦矽酸鹽玻璃、或無鹼玻璃。又,亦可藉由塗佈(coating)等表面處理而對板狀之玻璃10賦予此種特性。
於板狀之玻璃10為硼矽酸玻璃之情形時,可使用康寧公司之#7059或Pyrex(註冊商標)。
於板狀之玻璃10為鋁矽酸鹽玻璃之情形時,亦可使用具有如以下之組成之玻璃組成物。
以質量%表示,具有SiO2 58~66%,Al2O3 13~19%,Li2O 3~4.5%,Na2O 6~13%,K2O 0~5%,R2O 10~18%(其中,R2O=Li2O+Na2O+K2O),MgO 0~3.5%,CaO 1~7%,SrO 0~2%,BaO 0~2%,RO 2~10%(其中,RO=MgO+CaO+SrO+BaO),TiO2 0~2%,CeO2 0~2% Fe2O3 0~2%,
MnO 0~1%(其中,TiO2+CeO2+Fe2O3+MnO=0.01~3%),SO3 0.05~0.5%之組成之玻璃組成物。
又,亦可使用具有如以下之組成之玻璃組成物。
以質量%表示,具有由SiO2 60~70% Ai2O3 5~20%,Li2O+Na2O+K2O 5~25%,Li2O 0~1%,Na2O 3~18%,K2O 0~9%,MgO+CaO+SrO+BaO 5~20%,MgO 0~10%,CaO 1~15%,SrO 0~4.5%,BaO 0~1%,TiO2 0~1%,ZrO2 0~1%,組成之玻璃組成物。
進而,亦可使用如以下之組成之玻璃組成物。
以質量%表示,含有SiO2 59~68% Al2O3 9.5~15%,
Li2O 0~1%,Na2O 3~18%,K2O 0~3.5%,MgO 0~15%,CaO 1~15%,SrO 0~4.5%,BaO 0~1%,TiO2 0~2%,ZrO2 1~10%,之玻璃組成物。
又,可使用以下之玻璃組成物。
以質量%表示,含有SiO2 50~70%,Al2O3 14~28%,Na2O 1~5%,MgO 1~13%,及ZnO 0~14%,之玻璃組成物。
進而,亦可使用以下之玻璃組成物。
以質量%表示,包括SiO2 56~70%,Al2O3 7~17%,
Li2O 4~8%,MgO 1~11%,ZnO 4~12%,Li2O+MgO+ZnO 14~23%,B2O3 0~9%,及CaO+BaO 0~3% TiO2 0~2%,之玻璃組成物。
於板狀之玻璃10為鈉鈣玻璃之情形時,例如可使用廣泛用於板玻璃之玻璃組成物。
又,於板狀之玻璃10為含鈦矽酸鹽玻璃之情形時,例如,藉由含有5莫耳%以上之TiO2,可使板狀之玻璃10之波長250nm~535nm之範圍內之特定波長λ2之光之吸收係數為1cm-1以上,藉由含有10莫耳%以上之TiO2,可使板狀之玻璃10之波長λ2之光之吸收係數為4cm-1以上。進而,根據需要,板狀之玻璃10亦可含有選自Bi、W、Mo、Ce、Co、Fe、Mn、Cr、及V之金屬之氧化物之至少1種。該等金屬之氧化物作為著色成分而發揮功能,可提高板狀之玻璃10之吸收係數。
於板狀之玻璃10為含鈦矽酸鹽玻璃之情形時,例如,可使用以下之玻璃組成物。
以莫耳%表示,50≦(SiO2+B2O3)≦79莫耳%,5≦(Al2O3+TiO2)≦25莫耳%
5≦(Li2O+Na2O+K2O+Rb2O+Cs2O+MgO+CaO+SrO+BaO)≦25莫耳%,其中,5≦TiO2≦25莫耳%之玻璃組成物。
又,於上述含鈦矽酸鹽玻璃中,較佳為(Al2O3+TiO2)/(Li2O+Na2O+K2O+Rb2O+Cs2O+MgO+CaO+SrO+BaO)≦0.9。
進而,於上述含鈦矽酸鹽玻璃中,較佳為70≦(SiO2+B2O3)≦79莫耳%,10≦TiO2≦15莫耳%,10≦Na2O≦15莫耳%。
作為無鹼玻璃,例如可使用以下之玻璃組成物。
以莫耳%表示,含有45≦(SiO2+B2O3)≦80莫耳%,7≦Al2O3≦15莫耳%,0≦TiO2≦5莫耳%,2≦(MgO+CaO+SrO+BaO)≦20莫耳%,實質上不含有鹼金屬氧化物之玻璃組成物。
板狀之玻璃10之厚度並無特別限定。於將所製造之玻璃基板用作內插器之情形時,板狀之玻璃10之厚度例如為0.05~1mm。
於步驟(I)中,於板狀之玻璃10形成貫通孔11之方法並無特別限定。例如,可使用專利文獻1~3所記載之方法等公知之方法。又,於步驟(I)中,作為於板狀之玻璃10形成貫通孔11之方法,就抑制製造
成本、且抑制於形成貫通孔11時於貫通孔11之周邊產生於板狀之玻璃10之變形而形成形狀整齊之貫通孔11之觀點而言,較佳地使用以下所述之方法。具體而言,步驟(I)具備步驟(I-a)及步驟(I-b)。關於該等步驟,可應用日本特開2008-156200號所記載之方法。
步驟(I-a)係藉由對板狀之玻璃10照射雷射,而於板狀之玻璃10之照射有雷射之部分形成變質部的步驟。此處,雷射具有波長250nm~535nm之範圍內之特定波長λ2。步驟(I-b)係藉由使用對變質部之蝕刻速率大於對板狀之玻璃10之未形成變質部之部分之蝕刻速率的蝕刻液至少蝕刻變質部,而於板狀之玻璃10形成貫通孔11之步驟。
於步驟(I-a)中,例如,將波長λ2之脈衝雷射以透鏡聚光後照射至板狀之玻璃10。脈衝雷射之脈衝寬度並無特別限定,但就抑制雷射照射裝置之成本、使雷射L之峰-峰值為特定值以上而確保加工性之觀點而言,例如,為1ns(奈秒)~200ns,較佳為1ns~100ns,更佳為5ns~50ns。
脈衝雷射例如為Nd:YAG雷射之高次諧波、Nd:YVO4雷射之高次諧波、或Nd:YLF雷射之高次諧波。於該情形時,高次諧波例如為二次諧波、三次諧波、或四次諧波。二次諧波之波長為532nm~535nm左右,三次諧波之波長為355nm~357nm左右,四次諧波之波長為266nm~268nm左右。藉由使用此種脈衝雷射,而可於板狀之玻璃10廉價地形成變質部。
就以可於板狀之玻璃10形成微小之貫通孔11之方式使脈衝雷射之照射點為特定值以下之觀點而言,脈衝雷射之波長λ2例如為535nm
以下,較佳為360nm以下,更佳為350nm~360nm。又,較理想的是滿足波長λ1<波長λ2之關係。
脈衝雷射所具有之能量並無特別限定,但較佳為與板狀之玻璃10之材質或應形成於板狀之玻璃10之變質部之尺寸等對應之能量。脈衝雷射所具有之能量例如為5μJ/脈衝~100μJ/脈衝。藉由使脈衝雷射之能量增加,而可以與其成比例之方式使變質部之長度變長。脈衝雷射之光束品質M2例如為2以下。於該情形時,容易於板狀之玻璃10形成微小之貫通孔11。
板狀之玻璃10之波長λ2之光之吸收係數例如為50cm-1以下,較佳為0.1cm-1~20cm-1。於該情形時,容易減輕脈衝雷射之能量於板狀之玻璃10之表面附近被吸收之情況,而於板狀之玻璃10之內部形成變質部。再者,即便波長λ2時之板狀之玻璃10之吸收係數未達0.1cm-1,亦可於板狀之玻璃10之內部形成變質部。波長λ2之光之吸收係數為50cm-1以下之玻璃可自公知之玻璃選擇。
吸收係數可藉由測定厚度d(例如約0.1cm)之玻璃之樣品之穿透率及反射率而算出。首先,對於厚度d(cm)之玻璃之樣品,測定穿透率T(%)與入射角12°時之反射率R(%)。穿透率T及反射率R可使用島津製作所公司製之分光光度計UV-3100型來測定。然後,根據測定值使用以下之式算出玻璃之吸收係數α。
α=ln((100-R)/T)/d
根據上述方法,板狀之玻璃10無須為感光性玻璃。因此,對於較多種類之玻璃可形成變質部。即,於上述方法中,於板狀之玻璃10
為實質上不含有金或銀之玻璃之情形時亦可應用。
於對板狀之玻璃10照射雷射時,就抑制板狀之玻璃10之上表面及下表面產生破裂之觀點而言,板狀之玻璃10之楊氏模數較佳為70GPa以上。
透鏡之焦點距離F(mm)例如為50mm~500mm,較佳為100mm~200mm。
又,脈衝雷射之光束直徑D(mm)例如為1mm~40mm,較佳為3mm~20mm。此處,光束直徑D係入射至透鏡時之脈衝雷射之光束直徑,係指相對於光束之中心之強度而強度成為[1/e2]倍之範圍之直徑。
將焦點距離F除以光束直徑D所得之值,即[F/D]之值為7以上,較佳為7以上且40以下,更佳為10以上且20以下。該值係與照射至玻璃之雷射之聚光性相關之值。若F/D為7以上,則可防止於光束腰附近雷射功率過強,從而可防止於玻璃基板10之內部產生龜裂。
不需要於將脈衝雷射照射至板狀之玻璃10之前對板狀之玻璃10進行前處理,例如,形成如促進脈衝雷射之吸收之膜。但是,亦可根據情形,進行上述處理。
於板狀之玻璃10之照射有脈衝雷射之部分形成變質部。變質部係通常藉由使用光學顯微鏡之觀察而與其他部分區分。變質部係藉由雷射照射而產生光化學反應、產生E'中心或非交聯氧等缺陷之部位或藉由雷射照射之急熱、急冷而產生之保持高溫度區域之鬆散的玻璃構造之部位等。變質部與板狀之玻璃10之變質部以外之部分相比相對於特定之蝕刻液,容易被蝕刻。
於步驟(I-a)中,例如,以於板狀之玻璃10之內部聚焦之方式將雷射照射至板狀之玻璃10。變質部係於步驟(I-b)中以可於板狀之玻璃10容易地形成貫通孔11之方式形成。因此,例如,以於板狀之玻璃10之厚度方向之中央附近聚焦之方式將雷射照射至板狀之玻璃10。又,只要可於板狀之玻璃10形成變質部,則亦可以於板狀之玻璃10之外部聚焦之方式照射雷射。例如,既可以於距板狀之玻璃10之雷射入射之側之面離開特定之距離(例如1.0mm)之位置聚焦之方式照射雷射,亦可以於距板狀之玻璃10之與雷射入射之側之面相反側之面離開特定之距離(例如1.0mm)之位置聚焦之方式照射雷射。換言之,只要可於板狀之玻璃10形成變質部,雷射(i)於板狀之玻璃10之自雷射入射之側之面向與雷射前進之方向相反之方向處於1.0mm以內之範圍之位置(包含板狀之玻璃10之雷射入射之側之面)、(ii)於自板狀之玻璃10與雷射入射之側之面相反側之面向穿透板狀之玻璃10之雷射前進之方向處於1.0mm以內之位置(包含板狀之玻璃10之與雷射入射之側之面相反側之面)、或(iii)於板狀之玻璃10之內部聚焦均可。
形成於板狀之玻璃10之變質部之大小根據入射至透鏡時之雷射之光束直徑D、透鏡之焦點距離F、板狀之玻璃10之吸收係數、脈衝雷射之功率等而變化。藉由調整該等參數,例如,可形成直徑為10μm以下且板狀之玻璃10之厚度方向之長度為100μm以上之圓柱狀之變質部。
將於步驟(I-a)中被選擇之條件之一例示於表1。
其次,對步驟(I-b)進行說明。於步驟(I-b)中,使用較相對於板狀之玻璃10之未形成變質部之部分之蝕刻速率而相對於變質部之蝕刻速率更大之蝕刻液。作為此種蝕刻液,例如,可使用氫氟酸(氟化氫(HF)之水溶液)。又,作為蝕刻液,亦可使用硫酸(H2SO4)或其水溶液、硝酸(HNO3)或其水溶液、或鹽酸(氯化氫(HCl)之水溶液)。又,作為蝕刻液,亦可使用該等酸之混合物。於使用氫氟酸作為蝕刻液之情形時,形成於板狀之玻璃10之變質部之蝕刻容易進展,可於短時間形成貫通孔11。於使用硫酸作為蝕刻液之情形時,形成於板狀之玻璃10之變質部以外之玻璃不易被蝕刻,可形成錐角較小之直的貫通孔11。
蝕刻時間及蝕刻液之溫度根據形成於板狀之玻璃10之變質部之形狀或尺寸而適當選擇。藉由提高蝕刻時之蝕刻液之溫度可提高蝕刻速度。又,可根據蝕刻條件控制貫通孔11之直徑。
於步驟(I-a)中,例如,若以於板狀之玻璃10之上表面側及下表面側露出之方式形成變質部,則可藉由自板狀之玻璃10之上表面側及下表面側進行蝕刻而形成貫通孔11。又,於步驟(I-a)中,於以不於板狀之玻璃10之上表面側或下表面側露出之方式形成變質部之情形時,
亦可於進行步驟(I-b)之前,以變質部露出之方式對板狀之玻璃10進行研磨。
藉由使步驟(I-a)中之變質部之形成條件及步驟(I-b)中之蝕刻條件變化,可使貫通孔11之形狀形成為圓柱狀、圓錐台狀、或鼓形狀(沙漏形狀)等形狀。
其次,對步驟(II)進行說明。首先,準備對波長120nm~300nm之範圍內之特定波長λ1之光具有感光性之樹脂組成物。作為此種樹脂組成物,例如,可使用藉由照射波長λ1之光而相對於特定之鹼溶液之溶解性增大之樹脂組成物。即,該樹脂組成物於感光前相對於特定之鹼溶液為不溶。例如,可於步驟(II)中使用作為化學增幅型之正型之光阻而使用之樹脂組成物。化學增幅型之正型之光阻例如含有鹼可溶基由酸不穩定保護基而保護之鹼可溶樹脂及光酸產生劑。例如,藉由將此種樹脂組成物利用旋轉塗佈等塗佈方法塗佈於板狀之玻璃10之一主面之整體,如圖1(e)所示,可形成樹脂層20。於該情形時,藉由將樹脂組成物塗佈於板狀之玻璃10而以覆蓋貫通孔11之方式形成樹脂層20。
又,樹脂層20亦可藉由將含有對波長λ1之光具有感光性之樹脂組成物之乾膜貼附於板狀之玻璃10之一主面而形成。此種乾膜例如可藉由加熱壓製而貼附於板狀之玻璃10之一主面。
其次,對步驟(III)進行說明。於步驟(III)中,如圖1(f)所示,自板狀之玻璃10之另一主面(形成有樹脂層20之板狀之玻璃10之一主面之相反側之主面)側,將含有波長λ1之光U照射至板狀之玻璃10及樹脂層20。此時,照射至板狀之玻璃10及樹脂層20之光U亦可具有波
長λ1以外之波長。於該情形時,較佳為照射至板狀之玻璃10及樹脂層20之光之光譜於波長λ1附近具有峰值。如上所述,於板狀之玻璃10中,波長λ1之光之穿透率為1%以下,故而波長λ1之光幾乎不穿透板狀之玻璃10。又,板狀之玻璃10係於步驟(III)中以樹脂層20不被入射至板狀之玻璃10之另一主面之光U感光之方式,保護樹脂層20免受光U影響。因此,樹脂層20中與板狀之玻璃10接觸之部分不被光U感光。另一方面,光U通過貫通孔11而使樹脂層20之覆蓋貫通孔11之部分(面向貫通孔11之部分)感光。藉此,由於光U屬於紫外線區域,故而,例如,光酸產生劑進行光分解而產生酸,以該酸為觸媒使得酸不穩定保護基產生脫保護反應。藉此,藉由樹脂之極性變化,而樹脂層20之感光之部分自鹼不溶變化為鹼可溶。因此,樹脂層20之覆蓋貫通孔11之部分相對於特定之鹼溶液之溶解性增大,但樹脂層20之其以外之部分相對於特定之鹼溶液仍為不溶之狀態。
光U之光源只要含有所照射之光之波長為120nm~300nm之範圍內之特定波長λ1,則並無特別限定。作為光U之光源,例如,可使用準分子雷射、準分子燈、或低壓水銀燈。準分子雷射例如照射193nm(ArF)、248nm(KrF)等之波長之光。準分子燈例如照射126nm(Ar2)、146nm(Kr2)、172nm(Xe2)、或222nm(KrCl)之波長之光。低壓水銀燈例如照射185nm或254nm之波長之光。又,亦可使用上述Nd:YAG雷射等高次諧波。亦可根據情形,一併使用將所照射之光之波長限制於120nm~300nm之範圍內之濾波器(filter)。光U之照射時間只要可使樹脂層20之覆蓋貫通孔11之部分充分感光則並不特別限定。光U之照射時間例如為數秒鐘~數分鐘。
其次,對步驟(IV)進行說明。於步驟(IV)中,將樹脂層20之於步驟(III)中感光之部分去除。例如,將樹脂層20浸漬於特定之鹼溶液。藉此,將樹脂層20之覆蓋貫通孔11之部分去除,如圖1(g)所示,形成樹脂貫通孔21。如此一來,製造玻璃基板1a。
作為特定之鹼溶液,例如,可使用正型之光阻之顯影液。例如,可將含有TMAH(氫氧化四甲基銨)之溶液用作特定之鹼溶液。再者,樹脂層20之覆蓋貫通孔11之部分以外之部分不被光U感光,故而相對於特定之鹼溶液為不溶而不被去除。
樹脂層20之於步驟(III)中感光之部分位於貫通孔11之正上方,故而藉由進行步驟(IV),而樹脂貫通孔21與貫通孔11正確地對準而形成。即,樹脂貫通孔21以自貫通孔11向樹脂層20之厚度方向延伸之方式形成。如此,形成有貫通孔11之板狀之玻璃10作為用以於樹脂層20之特定之位置形成樹脂貫通孔21之遮罩而發揮功能。
第1實施形態之玻璃基板之製造方法亦可進而具備步驟(V)。步驟(V)係於貫通孔11之內部及樹脂貫通孔21之內部形成貫通電極30之步驟。只要可於貫通孔11之內部及樹脂貫通孔21之內部形成貫通電極30,則形成貫通電極30之方法並無特別限定。例如,藉由使用Cu(銅)等金屬之鍍敷,而於貫通孔11之內部形成貫通電極30。難以對板狀之玻璃10直接實施鍍敷。因此,例如,如圖1(c)所示,於至少貫通孔11之內周面預先形成用以使形成貫通電極30之導電材料附著的籽晶層12之後,藉由鍍敷形成貫通電極30。可藉由使含有貫通孔11之內周面之板狀之玻璃10之表面與含有例如Pd(鈀)之觸媒接觸,以形成籽晶層12。藉此,可對板
狀之玻璃10實施無電解鍍敷。進而,於第1實施形態之玻璃基板之製造方法中,如圖1(d)所示,形成於板狀之玻璃10之應形成樹脂層20之一主面之籽晶層12係藉由研磨而去除。藉此,防止複數個貫通電極30之間之電性導通。如圖1所示,籽晶層12之形成及去除例如係於進行步驟(I)之後且進行步驟(II)之前的期間進行。
對板狀之玻璃10進行鍍敷之金屬並無特別限定,但就提高導電性、降低製造成本之觀點而言,較佳為Cu(銅)。以藉由Cu(銅)而鍍敷之情形為例進行以下之說明。首先,於形成於貫通孔11之內周面之籽晶層12藉由無電解鍍敷析出Cu(銅)而形成鍍敷層。於該鍍敷層之表面進而析出Cu(銅)而使鍍敷層成長,藉此,如圖1(h)所示,於貫通孔11之內部及樹脂貫通孔21之內部形成貫通電極30。再者,於在板狀之玻璃10之另一主面形成有籽晶層12之情形時,亦於板狀之玻璃10之另一主面析出Cu(銅)而形成鍍敷層。若藉由無電解鍍敷,而將具有特定之厚度之鍍敷層形成於板狀之玻璃10之另一主面,則於板狀之玻璃10之另一主面側確保導電性。於該情形時,亦可藉由電鍍而更有效率地進行鍍敷。即,亦可將無電解鍍敷與電鍍組合而對板狀之玻璃10實施鍍敷。
於在板狀之玻璃10之另一主面形成鍍敷層之情形時,亦可將該鍍敷層藉由研磨而去除。此時,亦將籽晶層12與鍍敷層一起去除。如此一來,製造如圖1之(i)所示之玻璃基板1ax。又,亦可利用該鍍敷層,於板狀之玻璃10之另一主面藉由光微影而形成特定之電路圖案。
<第2實施形態>
其次,對第2實施形態之玻璃基板之製造方法進行說明。第2實施形
態之玻璃基板之製造方法除了特別說明之情形以外,與第1實施形態之玻璃基板之製造方法同樣地進行。第1實施形態之說明只要於技術上不矛盾,亦適合第2實施形態。
於第2實施形態之玻璃基板之製造方法中,步驟(I)、步驟(II)、及步驟(IV)係與第1實施形態同樣地進行。又,籽晶層12亦與第1實施形態同樣地形成。
於第2實施形態之玻璃基板之製造方法中,如圖2(b)所示,於步驟(II)中,於板狀之玻璃10之一主面之自貫通孔11離開特定之距離之位置形成光學元件25。此時,作為形成樹脂層20之樹脂組成物,可使用正型之紫外線感光性樹脂組成物。該樹脂組成物對波長120nm~300之範圍內之特定波長λ1之光具有感光性。光學元件25例如為具有特定之曲面之透鏡。光學元件25係使用具有適當之形狀之模具之成形,例如,熱壓印等成形法,而形成於樹脂層20之特定之位置。此時,作為用以將形成光學元件25之位置定位之導件可利用貫通孔11。藉此,可使將形成光學元件25之位置與應形成光學元件25之位置以較高之精度對準。應形成光學元件25之位置例如以於將經製造的玻璃基板與具備受光元件或發光元件等光元件的另一基板重疊時,設置於另一基板之光元件與光學元件25之位置關係為特定之關係之方式決定。例如,以於經製造之玻璃基板與具備光元件之另一基板重疊時,光學元件25位於自光元件發光之光或由光元件受光之光之光路上之方式,決定光學元件25之位置。
如圖2(c)所示,自板狀之玻璃10之另一主面側照射光U而使樹脂層20之覆蓋貫通孔11之部分感光。然後,如圖2(d)所示,使
樹脂層20之感光之部分接觸特定之鹼溶液,將樹脂層20之感光之部分去除而形成貫通樹脂層20之樹脂貫通孔21。
第2實施形態之玻璃基板之製造方法係與第1實施形態相同,亦可具備步驟(V)。步驟(V)係於貫通孔11之內部及樹脂貫通孔21之內部形成貫通電極30之步驟。如上所述,於板狀之玻璃10之表面,形成有用以使形成貫通電極30之Cu(銅)等導電材料附著之籽晶層12。因此,如圖3(e)所示,可藉由鍍敷而於貫通孔11之內部及樹脂貫通孔21之內部形成貫通電極30。
於板狀之玻璃10之與樹脂層20相反側之主面亦形成有籽晶層12,故而亦於該主面形成鍍敷層。於第2實施形態之玻璃基板之製造方法之一例中,該鍍敷層係如圖3(f)所示,例如藉由研磨而去除。此時,亦將籽晶層12與鍍敷層一起去除。於該情形時,如圖3(g)所示,亦可於板狀之玻璃10之與樹脂層20相反側之主面形成與貫通電極30電性連接之導電部40a。導電部40a例如可藉由將板狀之玻璃10之與樹脂層20相反側之主面之應形成導電部40a之部分以外之部分遮蔽,且使形成導電部40a之Cu(銅)等導電材料濺鍍或蒸鍍而形成。如此一來,製造如圖3(g)所示之具備貫通電極30及導電部40a之玻璃基板1b。
又,於第2實施形態之玻璃基板之製造方法之另一例中,如圖3(h)所示,可藉由於形成於板狀之玻璃10之與樹脂層20相反側之主面之鍍敷層實施光微影將鍍敷層中需要之部分保留而形成導電部40a。此時,亦將鍍敷層之不需要之部分與籽晶層12一起去除。如此一來,製造如圖3(h)所示之具備貫通電極30及導電部40a之玻璃基板1c。
對玻璃基板1b或玻璃基板1c之使用例進行說明。玻璃基板1b或玻璃基板1c例如,如圖4所示,與光元件基板2重疊而使用。光元件基板2具備基板60、導電部70、及光元件80。光元件80為LED(Light-emitting diode)或VCSEL(vertical cavity surface emitting Laser)等發光元件或APD(avalanche photodiode)等受光元件。導電部70係形成於基板60上之電路圖案,電性連接於光元件80。玻璃基板1b或玻璃基板1c係藉由焊接凸塊50而接合於光元件基板2。具體而言,將光元件基板2接近導電部40a藉由焊接凸塊50而將導電部40a與導電部70接合。
如上所述,光學元件25相對於貫通孔11以較高之精度定位,故而亦可精度良好地進行光學元件25與光元件80之定位。例如,可將貫通電極30作為導件而進行玻璃基板1b或玻璃基板1c與光元件基板2之定位。玻璃基板1b或玻璃基板1c係以光學元件25配置於特定之位置之方式相對於光元件基板2重疊。例如,光學元件25位於自光元件80發光之光或應由光元件80受光之光之光路上。由於可將貫通孔11或貫通電極30作為導件而將光學元件25及光元件80定位,故而可將光學元件25之光軸與光元件80之光軸對準。再者,光學元件25、樹脂層20、及板狀之玻璃10可使自光元件80發光之光或應由光元件80受光之光穿透。
與貫通電極30電性連接之導電部40b根據需要形成於玻璃基板1b之樹脂層20或玻璃基板1c之樹脂層20上。藉此,可藉由導電部40b、貫通電極30、導電部40a、及導電部70,而自光元件基板2之外部對光元件80輸入例如電力或調變信號。又,由於光學元件25與光元件80係設置於不同之基板,故而於產生不良品之情形時,可容易地找到玻璃基板
1b或玻璃基板1c,進而光元件基板2中哪一者存在不良情況。
用以控制光元件80之控制器(省略圖示)亦可設置於玻璃基板1b或玻璃基板1c之樹脂層20側。於該情形時,控制器係藉由導電部40b、貫通電極30、導電部40a、及導電部70而電性連接於光元件80。於該情形時,可將用以控制光元件80之控制器構裝於與設置有光元件80之基板不同之基板。如此,可將電路或元件配置於與基板之主面垂直之方向,從而可提高模組之積體度。
<第3實施形態>
其次,對第3實施形態之玻璃基板之製造方法進行說明。第3實施形態之玻璃基板之製造方法除了特別說明之情形以外,與第1實施形態之玻璃基板之製造方法同樣地進行。第1實施形態之說明只要於技術上不矛盾,亦適合於第3實施形態。
第3實施形態之玻璃基板之製造方法係與第1實施形態相同,具備步驟(I)、步驟(II)、步驟(III)、及步驟(IV),進而具備步驟(V)。步驟(V)係於貫通孔11之內部及樹脂貫通孔21之內部形成貫通電極30之步驟。例如,於步驟(V)中,於至少貫通孔11之內周面形成用以使形成貫通電極30之導電材料附著之籽晶層12之後,藉由鍍敷來形成貫通電極30。此處,如圖5(a)所示,除了板狀之玻璃10之樹脂層20側之面以外,整體地形成有籽晶層12。於該情形時,若實施鍍敷,則如圖5(b)所示,除了形成貫通電極30以外,還於板狀之玻璃10之與樹脂層20相反側之主面形成鍍敷層。另一方面,於樹脂層20之表面未形成籽晶層12,故而未形成鍍敷層。
形成於板狀之玻璃10之與樹脂層20相反側之主面之鍍敷層例如,如圖5(c)所示藉由研磨而去除。此時,亦將籽晶層12與鍍敷層一起去除。於該情形時,然後,以電性連接於貫通電極30之方式形成導電部40a。導電部40a例如係藉由將板狀之玻璃10之與樹脂層20相反側之主面之應形成導電部40a之部分以外之部分遮蔽,且使形成導電部40a之Cu(銅)等導電材料於板狀之玻璃10之與樹脂層20相反側之主面濺鍍或蒸鍍而形成。
亦可不將形成於板狀之玻璃10之與樹脂層20相反側之主面之鍍敷層去除,為了形成導電部40a而利用該鍍敷層。例如,如圖5(e)所示,可藉由於形成於板狀之玻璃10之與樹脂層20相反側之主面之鍍敷層實施光微影將鍍敷層中需要之部分保留而形成導電部40a。此時,亦將鍍敷層之不需要之部分與籽晶層12一起去除。
第3實施形態之玻璃基板之製造方法進而具備步驟(VI)。步驟(VI)係於步驟(V)之後,將樹脂層20去除,使貫通電極30中於樹脂貫通孔21之內部由樹脂層20包圍之部分露出之步驟。將樹脂層20去除之方法並不特別限制。例如,對樹脂層20照射含有波長120nm~300之範圍內之特定波長λ1之光U而使樹脂層20之整體感光,然後使特定之鹼溶液接觸於樹脂層20而將樹脂層20去除。例如,亦可於形成於板狀之玻璃10之與樹脂層20相反側之主面之鍍敷層實施光微影而形成導電部40a之情形時,利用使用於該光微影之顯影液,與形成於鍍敷層之抗蝕劑層之顯影同時將樹脂層20去除。如此一來,如圖5(d)及(e)所示,可製造玻璃基板1d或玻璃基板1e。玻璃基板1d及玻璃基板1e分別具備貫通電極30
及導電部40a,且於板狀之玻璃10之與導電部40a相反側之主面貫通電極30之一部分突出。
貫通電極30之於板狀之玻璃10之與導電部40a相反側之主面露出之部分係作為成為玻璃基板1d或玻璃基板1e之電性接腳之支柱(pillar)35而發揮功能。如此,根據第3實施形態之玻璃基板之製造方法,可容易地形成成為用以電性連接之立足處之支柱35。如圖6所示,於將複數個玻璃基板1e積層時,使用支柱35實現元件彼此之電性連接。因此,可使電路圖案或配線高積體化。
Claims (9)
- 一種玻璃基板之製造方法,其具備如下步驟:(I)於板狀之玻璃形成貫通孔;(II)以使用下述樹脂組成物覆蓋上述貫通孔之方式於上述板狀之玻璃之一主面形成樹脂層,該樹脂組成物對波長120nm~300nm之範圍內之特定波長λ1之光具有感光性;(III)自上述板狀之玻璃之另一主面側照射含有上述波長λ1之光U而使上述樹脂層之覆蓋上述貫通孔之部分感光;及(IV)將上述樹脂層之於步驟(III)中感光之部分去除而形成貫通上述樹脂層之樹脂貫通孔;上述板狀之玻璃其上述波長λ1之光之穿透率為1%以下,且於上述步驟(III)中,以上述樹脂層不被入射至上述板狀之玻璃之上述另一主面之上述光U感光的方式保護上述樹脂層免受上述光U影響。
- 如申請專利範圍第1項之玻璃基板之製造方法,其中,上述步驟(I)具備如下步驟:(I-a)藉由對上述板狀之玻璃照射雷射,而於上述板狀之玻璃之照射有雷射之部分形成變質部;及(I-b)藉由使用對上述變質部之蝕刻速率大於對上述板狀之玻璃之未形成上述變質部之部分之蝕刻速率的蝕刻液至少蝕刻上述變質部,而於上述板狀之玻璃形成上述貫通孔。
- 如申請專利範圍第2項之玻璃基板之製造方法,其中,上述雷射具有波長250nm~535nm之範圍內之特定之波長λ2。
- 如申請專利範圍第1項之玻璃基板之製造方法,其中,於上述步驟(II)中,在上述板狀之玻璃之上述一主面之距上述貫通孔離開特定之距離的位置形成光學元件。
- 如申請專利範圍第1項之玻璃基板之製造方法,其進而具備下述步驟:(V)於上述貫通孔之內部及上述樹脂貫通孔之內部形成貫通電極。
- 如申請專利範圍第5項之玻璃基板之製造方法,其中,於上述步驟(V)中,於至少上述貫通孔之內周面形成用以使形成上述貫通電極之導電材料附著之籽晶層之後,藉由鍍敷而形成上述貫通電極。
- 如申請專利範圍第5項之玻璃基板之製造方法,其進而具備下述步驟:(VI)於上述步驟(V)之後,將上述樹脂層去除,而使上述貫通電極中於上述樹脂貫通孔之內部由上述樹脂層包圍之部分露出。
- 如申請專利範圍第6項之玻璃基板之製造方法,其進而具備下述步驟:(VI)於上述步驟(V)之後,將上述樹脂層去除,而使上述貫通電極中於上述樹脂貫通孔之內部由上述樹脂層包圍之部分露出。
- 一種板狀之玻璃,其供於申請專利範圍第3項之玻璃基板之製造方法,且上述波長λ1之光之穿透率為1%以下,且上述波長λ2之光之吸收係數為50cm-1以下,使用上述樹脂組成物於該板狀之玻璃之一主面形成樹脂層之後,自該板狀之玻璃之另一主面側照射含有上述波長λ1之上述光U時,以上述樹脂層不被入射至該板狀之玻璃之上述另一主面之上述光U感光之方式保護上述樹脂層免受上述光U影響。
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JPWO2016063460A1 (ja) | 2017-09-21 |
TW201919808A (zh) | 2019-06-01 |
CN107074633A (zh) | 2017-08-18 |
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US11276584B2 (en) | 2022-03-15 |
JP6545699B2 (ja) | 2019-07-17 |
US20170229318A1 (en) | 2017-08-10 |
US20190362987A1 (en) | 2019-11-28 |
TW201628754A (zh) | 2016-08-16 |
CN111018364A (zh) | 2020-04-17 |
KR102337969B1 (ko) | 2021-12-09 |
US10418256B2 (en) | 2019-09-17 |
TWI674163B (zh) | 2019-10-11 |
CN111018364B (zh) | 2023-01-10 |
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KR20170087881A (ko) | 2017-07-31 |
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