TWI647742B - Light emitting device and method of manufacturing same - Google Patents

Abstract

A light emitting device includes a substrate, a light emitting diode, a first electrode, a second electrode, a first magnetic element, and a second magnetic element. The substrate has a first pad and a second pad. The first electrode and the second electrode are located on the light emitting diode. The first electrode is electrically connected to the first pad, and the second electrode is electrically connected to the second pad. The first magnetic element is formed on the substrate, substantially surrounds the first electrode, and does not contact the first pad and the second pad. The second magnetic element is formed on the side of the light emitting diode and is generally located above the first magnetic element. The first magnetic element and the second magnetic element are magnetically attracted. The invention also provides a method for manufacturing a light emitting device.

Description

Light emitting device and manufacturing method thereof

The present invention relates to a light emitting device, and more particularly, to a light emitting device having a magnetic element and a manufacturing method thereof.

Micro Light Emitting Device Display (micro LED display) is a new generation of display technology. The key technology is how to transfer a large number of micro light emitting diodes to a pixel array substrate.

However, the transfer technology is a mechanical operation, and the effectiveness of the transfer technology depends on the accuracy of the machine and the accuracy and yield of the transfer device itself. When extracting a micro-light-emitting diode, it will encounter machine operation errors and transfer device accuracy errors. When placing a micro-light-emitting diode, it will face another machine operation misalignment. If the micro-light-emitting diode is not placed, As for the correct position, the micro light-emitting diode will not work properly. Therefore, there is an urgent need for a method capable of solving the aforementioned problems.

The invention provides a light emitting device, which has a high product yield.

The invention also provides a manufacturing method of the light emitting device, which can improve the alignment accuracy of the micro light emitting diode.

A light-emitting device of the present invention includes a substrate, a light-emitting diode, a first electrode, a second electrode, a first magnetic element, and a second magnetic element. The substrate has a first pad and a second pad. The light emitting diode is located on the substrate. The first electrode and the second electrode are located on the light emitting diode. The first electrode is electrically connected to the first pad. The second electrode is electrically connected to the second pad. The first magnetic element is formed on the substrate, substantially surrounds the first electrode, and does not contact the first pad and the second pad. The second magnetic element is formed on the side of the light emitting diode and is generally located above the first magnetic element. The first magnetic element and the second magnetic element are magnetically attracted.

A method for manufacturing a light emitting device according to the present invention includes: providing a substrate having a first pad and a second pad; forming a first magnetic element on the substrate; forming a light emitting diode on a growth substrate; and forming a second magnetic element On the side of the light emitting diode; transferring the light emitting diode and the second magnetic element onto the substrate, and the second magnetic element magnetically attracts the first magnetic element; fixing the light emitting diode on the substrate; electrical Connecting the light emitting diode and the first pad; and electrically connecting the light emitting diode and the second pad.

Based on the above, the second magnetic element is located substantially above the first magnetic element, and the magnetic attraction generated after approaching to a certain distance, thereby achieving the effect of self-assembly. In this way, the above-mentioned magnetic element can improve the alignment accuracy of the micro-light-emitting diode, so that the manufactured light-emitting device has a higher product yield.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

10, 20, 30, 40, 50‧‧‧ light-emitting devices

100‧‧‧ substrate

110‧‧‧first magnetic element

112, 142‧‧‧Photoresistive materials

114, 144‧‧‧ magnetic particles

120A‧‧‧First conductive structure

120B‧‧‧Second conductive structure

200‧‧‧ Growth substrate

130, 430‧‧‧light-emitting diodes

132, 432‧‧‧ First electrode

134, 434‧‧‧Second electrode

138‧‧‧Reflective layer

136, 436‧‧‧ Insulation

140‧‧‧Second magnetic element

210‧‧‧ sacrificial layer

220, 420, 420’‧chain structure

230‧‧‧ intermediary substrate

300‧‧‧Pick up structure

L1‧‧‧first lead

L2‧‧‧Second Conductor

410‧‧‧Adhesive layer

CH‧‧‧channel

COM‧‧‧Common electrode

D‧‧‧ Drain

DL‧‧‧Data Line

G‧‧‧Gate

LL‧‧‧Light-emitting layer

P‧‧‧Photoresistive layer

P1‧‧‧The first pad

P2‧‧‧Second pad

S‧‧‧Source

SL‧‧‧scan line

SM1, SM2‧‧‧ semiconductor layer

T‧‧‧switching element

W1, W2‧‧‧Width

FIG. 1 is a schematic top view of a light emitting device according to an embodiment of the present invention.

2A to 2G are schematic cross-sectional views of a method for manufacturing the light-emitting device of FIG. 1.

FIG. 3 is a schematic top view of a light emitting device according to an embodiment of the present invention.

FIG. 4 is a schematic top view of a light emitting device according to an embodiment of the present invention.

5A to 5F are schematic cross-sectional views of a method for manufacturing the light-emitting device of FIG. 4.

FIG. 6 is a schematic top view of a light emitting device according to an embodiment of the invention.

FIG. 7 is a schematic top view of a light emitting device according to an embodiment of the invention.

8A-8C are schematic cross-sectional views of a method for manufacturing a light-emitting device according to an embodiment of the invention.

Several embodiments of the present invention will be disclosed in the following drawings. For the sake of clear description, many practical details will be described in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventional structures and elements will be shown in the drawings in a simple and schematic manner.

In the drawings, the thicknesses of layers, films, panels, regions, etc. are exaggerated for clarity. Throughout the description, the same reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element or When "connected to" another element, it may be directly on or connected to the other element, or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and / or electrical connection. However, the electrical connection is such that there are other elements between the two elements.

It should be understood that, although the terms "first" and "second" etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, and / or sections should not be affected Limitations of these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a "first element," "component," "region," "layer," or "portion" discussed below may be termed a second element, component, region, layer, or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms including "at least one" unless the content clearly indicates otherwise. "Or" means "and / or". As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "including" and / or "including" designate the stated features, regions, wholes, steps, operations, presence of elements and / or components, but do not exclude one or more The presence or addition of other features, areas as a whole, steps, operations, elements, components, and / or combinations thereof.

In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element, as shown. Should be Solution, relative terms are intended to include different orientations of the device in addition to the orientations shown in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "down" may include orientations of "down" and "up", depending on the particular orientation of the drawings. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "below" may include orientations above and below.

As used herein, "about" or "substantially" includes the stated value and an average value within an acceptable deviation range of a particular value determined by one of ordinary skill in the art, taking into account the measurement in question and measurement-related errors. A specific number (ie, a limitation of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%. Furthermore, "about" or "substantially" as used herein may select a more acceptable range of deviations or standard deviations according to optical properties, etching properties, or other properties, and all properties may not be applied without one standard deviation.

FIG. 1 is a schematic top view of a light emitting device according to an embodiment of the present invention. 2A to 2G are schematic cross-sectional views of a method for manufacturing the light-emitting device of FIG. 1. FIG. 2G is a schematic cross-sectional view taken along the line AA 'in FIG. 1, in which the same or similar reference numerals are used to indicate the same or similar elements, and the description of the same technical content is omitted.

Referring to FIG. 2A, a substrate 100 is provided. The substrate 100 includes a first pad P1 and a second pad P2. The first pad P1 is electrically connected to the first lead L1. The second pad P2 is electrically connected to the second lead L2. The shape of the first pad P1 and the second pad P2 perpendicularly projected on the substrate 100 is, for example, a circle, an oval, or a polygon, but the present invention It is not limited to this.

A first magnetic element 110 is formed on the substrate 100, wherein the first magnetic element 110 substantially surrounds the first pad P1 (for example, viewed in a direction perpendicular to the substrate 100), and the first magnetic element 110 does not contact the first pad P1 With the second pad P2. The first magnetic element 110 has a width W1. In this embodiment, the first magnetic element 110 includes a photoresist material 112 and a plurality of magnetic particles 114 dispersed therein. Since the first magnetic element 110 includes a photoresist material 112, the first magnetic element 110 can obtain a desired shape and size through a yellow light process, so as to improve the simplicity of the process. In some embodiments, the photoresist material 112 includes, for example, a negative photoresist resin or a positive photoresist resin, and the magnetic particles 114 include ferromagnetic materials such as iron, cobalt, nickel, and rhenium, or ferromagnetic material alloys, or ferromagnetic In combination with a non-ferromagnetic material alloy, the present invention is not limited thereto. In this embodiment, the particle size of the magnetic particles 114 is less than 350 nm, and preferably 5 nm to 50 nm. In this way, the ultraviolet exposure and scattering caused by the magnetic particles 114 can be reduced, and the process yield of the first magnetic element 110 can be improved.

Referring to FIG. 2B, a first conductive structure 120A is formed on the first pad P1, and the first magnetic element 110 surrounds the first conductive structure 120A. The method of forming the first conductive structure 120A is selected from, for example, printing, plating, deposition, and lithography processes.

The first conductive structure 120A is, for example, solder. The material of the first conductive structure 120A may include a metal, a conductive organic substance, a conductive adhesive, or a combination thereof. The shape of the first conductive structure 120A perpendicularly projected on the substrate 100 is, for example, a circle, an oval, or other geometric shapes, but the present invention is not limited thereto.

Please refer to FIG. 2C, a light emitting diode 130 is formed on the growth substrate 200. The growth substrate 200 may be a sapphire substrate, a gallium phosphide substrate, a gallium arsenide substrate, a silicon carbide substrate, or other applicable substrates. The light emitting diode 130 includes, for example, a semiconductor layer SM1, a light emitting layer LL, a semiconductor layer SM2, and an insulating layer 136. In some embodiments, the light emitting diode 130 further includes a reflective layer 138. The reflective layer 138 is located on the surface of the light emitting diode 130, but the invention is not limited thereto. The material of the reflective layer 138 includes, for example, aluminum, silver, or a combination thereof, but the present invention is not limited thereto. The semiconductor layer SM1 and the semiconductor layer SM2 are, for example, semiconductor layers of different conductivity types. For example, if the semiconductor layer SM1 is an N-type semiconductor layer, the semiconductor layer SM2 is a P-type semiconductor layer, but the present invention is not limited thereto. The insulating layer 136 surrounds the semiconductor layer SM1, the light emitting layer LL, and the semiconductor layer SM2. The reflective layer 138 is located on the insulating layer 136. The insulating layer 136 and the reflective layer 138 expose a part of the surface of the semiconductor layer SM2. A first electrode 132 is formed on the semiconductor layer SM2. In this embodiment, the light emitting diode 130 may be a vertical light emitting diode, but the present invention is not limited thereto. In other embodiments, the light emitting diode 130 may also be a horizontal light emitting diode.

Next, a second magnetic element 140 is formed on the side of the light emitting diode 130. In this embodiment, the second magnetic element 140 includes a plurality of parts separated from each other, but the present invention is not limited thereto. In other embodiments, the second magnetic element 140 surrounds the light emitting diode 130 once, and does not include separate parts. In this embodiment, the second magnetic element 140 includes a photoresist material 142 and a plurality of magnetic particles 144 dispersed therein. Since the second magnetic element 140 includes a photoresist material 142, the desired shape and size can be obtained by the yellow light process, so as to improve the simplicity of the process. In some embodiments, the photoresist material 142 includes, for example, a negative photoresist resin or a positive photoresist resin, and the magnetic particles 144 include, for example, iron, cobalt, nickel, or other materials or a combination of multiple materials. Limited. In this embodiment, the particle size of the magnetic particles 144 is less than 350 nm, and preferably 5 nm to 50 nm. In this way, the ultraviolet exposure and scattering caused by the magnetic particles 144 can be reduced, and the process yield of the second magnetic element 140 can be improved. In addition, the magnetic particle 144 has a magnetic susceptibility of 5 * 10 ^-4 to 0.5 emu / g, and may have a proper magnetic attraction ability to perform a self-assembly process.

The width W2 of the second magnetic element 140 is preferably larger than the width W1 of the first magnetic element 110, so that the second magnetic element 140 is more easily aligned with the first magnetic element 110 in subsequent processes, but the present invention does not take this as limit. In some embodiments, the height of the second magnetic element 140 plus the height of the first magnetic element 110 is greater than or equal to the height of the light emitting diode 130. In addition, the first magnetic element 110 and the second magnetic element 140 may be the same material or different materials. That is, the photoresist material 112 and the photoresist material 142 may be the same or different materials, and the magnetic particles 114 and the magnetic particles 144 may be the same or different materials, as long as the first magnetic element 110 and the second magnetic element 140 It can be magnetically attracted.

Referring to FIG. 2D, a sacrificial layer 210 is formed to cover the second magnetic element 140 and the light emitting diode 130. Next, a tether structure 220 and an interposer substrate 230 are formed on the second magnetic element 140 and the light emitting diode 130. The tether structure 220 is at least partially in contact with the light-emitting diode 130, the first electrode 132, the insulating layer 136, or the reflective layer 138 on the light-emitting diode 130. For example, the sacrificial layer 210 has an opening exposing the first electrode 132, and the tether structure 220 is in contact with the first electrode 132 through the opening of the sacrificial layer 210.

Referring to FIG. 2E, the growth substrate 200 is removed to expose the surface of the semiconductor SM1 of the light emitting diode 130. A second electrode 134 is formed on the surface of the semiconductor SM1. The sacrificial layer 210 is removed. The second electrode 134 is formed before the sacrificial layer 210 is removed, but the invention is not limited thereto.

Please refer to FIG. 2F, a plurality of light-emitting diodes 130, a first electrode 132, a second electrode 134, and second magnetic elements 140 on both sides of each light-emitting diode 130 are picked up at the same time by the picking structure 300. FIG. 2F takes a light-emitting diode 130 and its surrounding components as an example. In the aforementioned pickup process, the light emitting diode 130 is peeled from the tether structure 220 and the interposer substrate 230 due to the mechanical force generated by the pickup. In some embodiments, the pickup structure 300 may use a vacuum attraction force, an electrostatic adsorption force, or a Van Der Waals force to attract the light emitting diode 130 and the second magnetic element 140. In some embodiments, the material of the pick-up structure 300 includes, for example, polydimethylsiloxane, rubber, or other suitable materials. In this embodiment, the material of the pick-up structure 300 is polydimethylsiloxane, and the light emitting diode 130 and the second magnetic element 140 are adsorbed by Van der Waals force.

Next, the light emitting diode 130, the first electrode 132, the second electrode 134, and the second magnetic element 140 are transferred onto the substrate 100. In addition, the second magnetic element 140 is located substantially above the first magnetic element 110, so that the second magnetic element 140 and the first magnetic element 110 can magnetically attract each other. Therefore, the magnetic attraction between the second magnetic element 140 and the first magnetic element 110 can improve the problem of deviation during the transposition process.

Referring to FIGS. 1 and 2G, the light-emitting diode 130 is fixed on the substrate 100 to substantially complete the manufacturing process of the light-emitting device 10. First magnetic element 110 The distance G between the inner edge of the inner edge and the light emitting diode 130 is less than 10 μm, and preferably 1 μm to 4 μm. Therefore, the light emitting diode 130 can be better positioned on the substrate 100. In this embodiment, the first magnetic element 110 continuously surrounds the light emitting diode 130, but the present invention is not limited thereto. In other embodiments, the first magnetic element 110 may also discontinuously surround the light emitting diode 130.

The first electrode 132 is electrically connected to the first pad P1 through the first conductive structure 120A. A second conductive structure 120B is formed to electrically connect the second electrode 134 to the second pad P2. The material of the second conductive structure 120B may be metal, indium tin oxide, indium zinc oxide, conductive organic matter, conductive glue, or other applicable materials.

Please refer to FIG. 1, a pixel structure is disposed in the substrate 100, and each pixel structure is electrically connected to a corresponding scan line SL and a data line DL. The scan lines SL and the data lines DL are arranged alternately with each other, and an insulation layer (not shown) is sandwiched between the scan lines SL and the data lines DL. In other words, the extending direction of the scanning line SL is not parallel to the extending direction of the data line DL. It is preferable that the extending direction of the scanning line SL is perpendicular to the extending direction of the data line DL. Based on the consideration of conductivity, the scan lines SL and the data lines DL are generally made of metal materials, but the present invention is not limited thereto.

In this embodiment, the pixel structure includes a switching element T. The switching element T is electrically connected to the scanning line SL and the data line DL, and the light emitting diode 130 is electrically connected to the switching element T. The switching element T includes a gate G, a channel CH, a source S, and a drain D. A gate insulating layer (not shown) is disposed between the channel CH and the gate G. The source S and the drain D are electrically connected to the channel CH, respectively. The gate G of the switching element T is connected to the scanning line SL, and the source S of the switching element T is connected to the data line DL. this In addition, the drain D of the switching element T is electrically connected to the light emitting diode 130. The switching element T in this embodiment is described by taking a bottom gate thin film transistor as an example, but the present invention is not limited thereto. In other embodiments, the switching element T described above may also be a top-gate thin film transistor.

In some embodiments, the pixel structure includes more than one switching element T, more than one driving element, and passive elements, but the present invention is not limited thereto.

Please refer to FIG. 1 again, the first pad P1 and the drain D of the switching element T are electrically connected through the first wire L1, and the second pad P2 and the common electrode COM are electrically connected through the second wire L2, so that The light emitting diode 130 may be electrically connected to the switching element T and the common electrode COM, respectively. Wherein, the extending direction of the common electrode COM is parallel to the extending direction of the scanning line SL, but the invention is not limited thereto. In other embodiments, the extending direction of the common electrode COM is parallel to the extending direction of the data line DL, for example. In some embodiments, the common electrode COM and the scan line SL or the data line DL belong to the same film layer, but the present invention is not limited thereto. The common electrode COM is electrically connected to a common voltage (Vcom).

FIG. 3 is a schematic top view of a light emitting device according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 3 inherits the component numbers and parts of the embodiment of FIG. 1, wherein the same or similar reference numerals are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and details are not described herein.

The difference between the embodiment of FIG. 1 and the embodiment of FIG. 3 is that the second conductive structure 120B of the light emitting device 10 of FIG. 1 is perpendicular to the first conductive structure 120B in a direction perpendicular to the substrate 100. The magnetic element 110 and the second magnetic element 140 overlap, and the second conductive structure 120B of the light emitting device 20 of FIG. 3 overlaps the first magnetic element 110 and does not overlap the second magnetic element 140 in a direction perpendicular to the substrate 100.

FIG. 4 is a schematic top view of a light emitting device according to an embodiment of the present invention. 5A to 5F are schematic cross-sectional views of a method for manufacturing the light-emitting device of FIG. 4. It must be noted here that FIG. 5F is a schematic cross-sectional view taken along the line BB 'in FIG. 4, in which the same or similar reference numerals are used to indicate the same or similar elements, and the description of the same technical content is omitted.

Please refer to FIG. 5A. The steps in FIG. 5A are similar to those in FIG. 2A. The difference between the two is that the first magnetic element 110 in FIG. 5A does not surround the first pad P1.

Referring to FIG. 5B, an adhesive layer 410 is formed on the substrate 100, and the first magnetic element 110 surrounds the adhesive layer 410. In this embodiment, the adhesive layer 410 is only located in the first magnetic element 110, but the invention is not limited thereto. In other embodiments, part of the adhesive layer 410 may be located outside the first magnetic element 110.

Please refer to FIG. 5C. In this embodiment, the light emitting diode 430 is a horizontal light emitting diode, and includes a semiconductor layer SM1, a light emitting layer LL, a semiconductor layer SM2, and an insulating layer 436. The semiconductor layer SM2 and the semiconductor layer SM1 of the light-emitting diode 430 are electrically connected to the first electrode 432 and the second electrode 434, respectively. In this embodiment, for example, the light-emitting diode 430, the first electrode 432, and the second electrode 434 are formed on the growth substrate, and the second magnetic element 140 is formed on the side of the light-emitting diode 430. The laser lift-off process transfers the light-emitting diode 430, the first electrode 432, the second electrode 434, and the second magnetic element 140 to the sacrificial layer 210 and the interposer. Board 230. In this embodiment, the sacrifice layer 210 does not cover the light emitting diode 430, but is located under the light emitting diode 430 and the second magnetic element 140. The interposer substrate 230 is located below the second magnetic element 140. The sacrificial layer 210 has an opening O exposing the interposer substrate 230.

5D, the tether structure 420 is formed on the light-emitting diode 430 after the light-emitting diode 430 and the second magnetic element 140 are transferred onto the sacrificial layer 210 and the interposer 230, and the light-emitting diode 430 is exposed. The first electrode 432 and the second electrode 434 on the diode 430. The tether structure 420 fills the opening O of the sacrificial layer 210 and is in contact with the interposer substrate 230. Referring to FIG. 5E, the sacrificial layer 210 is removed.

Referring to FIGS. 4 and 5F, the light-emitting diode 430, the first electrode 432, the second electrode 434, and the second magnetic element 140 are transferred onto the substrate 100 as shown in FIG. 5B.

In this embodiment, part of the tether structure 420 remains on the light-emitting diode 430 and the second magnetic element 140. For example, after the transposition process, part of the tether structure 420 is separated from the interposer substrate 230. A tether structure 420 ′ is formed on the light-emitting diode 430 and the second magnetic element 140. The tether structure 420 'exposes the first electrode 432 and the second electrode 434 of the light emitting diode 430. In this embodiment, during the process of magnetic attraction between the second magnetic element 140 and the first magnetic element 110, the light-emitting diode 430 can be more accurately disposed on the substrate 100. In this embodiment, the adhesive layer 410 is located between the light-emitting diode 430 and the substrate 100 in a direction perpendicular to the substrate 100 and is parallel to the substrate 100 by at least the first magnetic element 110. Partially wrapped. Hair can be enhanced by the adhesive layer 410 Adhesive force between the photodiode 430 and the substrate 100.

The first conductive structure 120A is formed on the first electrode 432 and is electrically connected to the first electrode 432 to the first pad P1. The second conductive structure 120B is formed on the second electrode 434 and is electrically connected to the second electrode 434 to the second pad P2.

In this embodiment, the light emitting device 30 includes a substrate 100, a light emitting diode 430, a first electrode 432, a second electrode 434, a first magnetic element 110, and a second magnetic element 140. The substrate 100 includes a first pad P1 and a second pad P2. The light emitting diode 430 is located on the substrate 100. The first electrode 432 and the second electrode 434 are located on the light emitting diode 430. The first electrode 432 is electrically connected to the first pad P1. The second electrode 434 is electrically connected to the second pad P2. The first magnetic element 110 is formed on the substrate 100 and substantially surrounds the first electrode 432 and does not contact the first pad P1 and the second pad P2. The second magnetic element 140 is formed on a side of the light-emitting diode 430 and is generally located above the first magnetic element 110. The first magnetic element 110 and the second magnetic element 140 are magnetically attracted.

FIG. 6 is a schematic top view of a light emitting device according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 6 inherits the component numbers and parts of the embodiment of FIG. 4, in which the same or similar reference numerals are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and details are not described herein.

The difference between the embodiment of FIG. 6 and the embodiment of FIG. 4 is that the second conductive structure 120B of the light emitting device 30 of FIG. 4 overlaps the first magnetic element 110 and the second magnetic element 140 in a direction perpendicular to the substrate 100. 6 of the light emitting device 40 The second conductive structure 120B overlaps the first magnetic element 110 and does not overlap the second magnetic element 140 in a direction perpendicular to the substrate 100.

FIG. 7 is a schematic top view of a light emitting device according to an embodiment of the invention. 8A-8C are schematic cross-sectional views of a method for manufacturing a light-emitting device according to an embodiment of the present invention. It must be noted here that FIGS. 8A to 8C are schematic diagrams taken along the CC ′ line of FIG. 7, in which the same or similar reference numerals are used to indicate the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and details are not described herein.

Referring to FIG. 8A, after the light emitting diode 430, the first electrode 432, and the second electrode 434 are formed on the growth substrate 200, a photoresist layer P is formed to cover the light emitting diode 430, and the light emitting diode 430 is exposed. On the first electrode 432 and the second electrode 434. Next, a first conductive structure 120A and a second conductive structure 120B are formed on the first electrode 432 and the second electrode 434, respectively. From the viewpoint of process processability, the first conductive structure 120A and the second conductive structure 120B are preferably formed on the light emitting diode 430 at the same time by using the same process steps, but the present invention is not limited thereto.

Referring to FIG. 8B, the photoresist layer P is removed. A second magnetic element 140 is formed on a side of the light emitting diode 430.

Referring to FIG. 7 and FIG. 8C, the light-emitting diode 430 is flip-chip mounted on the substrate 100, and the first conductive structure 520 and the second conductive structure 120B are correspondingly disposed on the first connection of the substrate 100 through a flip-chip bonding process. On the pad P1 and the second pad P2. The first conductive structure 120A and the second conductive structure 120B are located between the light emitting diode 430 and the substrate. Between the boards 100. The first conductive structure 120A is located between the light emitting diode 430 and the first pad P1. The second conductive structure 120B is located between the light emitting diode 430 and the second pad P2. The first conductive structure 120A and the second conductive structure 120B are surrounded by the first magnetic element 110.

In this embodiment, the light emitting device 50 includes a substrate 100, a light emitting diode 430, a first electrode 432, a second electrode 434, a first magnetic element 110, and a second magnetic element 140. The substrate 100 includes a first pad P1 and a second pad P2. The light emitting diode 430 is located on the substrate 100. The first electrode 432 and the second electrode 434 are located on the light emitting diode 430. The first electrode 432 is electrically connected to the first pad P1. The second electrode 434 is electrically connected to the second pad P2. The first magnetic element 110 is formed on the substrate 100 and substantially surrounds the first electrode 432 and does not contact the first pad P1 and the second pad P2. The second magnetic element 140 is formed on a side of the light-emitting diode 430 and is generally located above the first magnetic element 110. The first magnetic element 110 and the second magnetic element 140 are magnetically attracted.

In summary, during the process of mass transfer of the light-emitting diode of the present invention, the second magnetic element is located above the first magnetic element, and the magnetic attraction generated when the second magnetic element is approached to a certain distance, and then To achieve the effect of self-assembly. In this way, the above-mentioned magnetic element can improve the accuracy when the light-emitting diode is transposed, so that the manufactured light-emitting device has a better yield.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be regarded as The scope of the attached patent application shall prevail.

Claims (20)

A light-emitting device includes: a substrate having a first pad and a second pad; a light-emitting diode on the substrate; a first electrode and a second electrode on the light-emitting diode On the body, the first electrode is electrically connected to the first pad, and the second electrode is electrically connected to the second pad. A first magnetic element is formed on the substrate and substantially surrounds the first electrode. And does not contact the first pad and the second pad; and a second magnetic element formed on a side of the light emitting diode and substantially above the first magnetic element, wherein the first magnetic element It is magnetically attracted to the second magnetic element. The light-emitting device according to item 1 of the patent application scope, wherein the first magnetic element continuously or discontinuously surrounds the light-emitting diode. The light emitting device according to item 1 of the patent application scope, wherein the second magnetic element includes a plurality of parts separated from each other. The light-emitting device according to item 1 of the patent application scope, wherein a width of the second magnetic element is larger than a width of the first magnetic element. The light emitting device according to item 1 of the scope of patent application, wherein the height of the second magnetic element plus the height of the first magnetic element is greater than or equal to the height of the light emitting diode. The light-emitting device according to item 1 of the patent application scope, wherein the first magnetic element and the second magnetic element include a photoresist material and a plurality of magnetic particles. The light-emitting device according to item 6 of the scope of patent application, wherein the particle diameter of the magnetic particles is less than 350 nm. The light-emitting device according to item 1 of the patent application scope, wherein a distance between the first magnetic element and the light-emitting diode is less than 10 micrometers. The light emitting device according to item 1 of the scope of patent application, further comprising: a first conductive structure electrically connecting the first electrode to the first pad; and a second conductive structure electrically connecting the second electrode To the second pad, wherein the second conductive structure at least partially overlaps the second magnetic element in a direction perpendicular to the substrate. The light-emitting device according to item 1 of the patent application scope, wherein the light-emitting diode includes a horizontal light-emitting diode. The light emitting device according to item 10 of the scope of patent application, further comprising: an adhesive layer, the adhesive layer is located between the light emitting diode and the substrate in a direction perpendicular to the substrate, and is parallel to the substrate. The adhesive layer is at least partially surrounded by the first magnetic element in the direction. The light-emitting device according to item 10 of the patent application scope, further comprising: a first conductive structure electrically connecting the first electrode to the first pad; and a second conductive structure electrically connecting the second electrode To the second pad, wherein the first conductive structure is located between the light emitting diode and the first pad, the second conductive structure is located between the light emitting diode and the second pad, and the The first conductive structure and the second conductive structure are surrounded by the first magnetic element. The light-emitting device according to item 1 of the patent application scope, wherein the light-emitting diode includes a vertical light-emitting diode. The light-emitting device according to item 13 of the scope of patent application, further comprising: a first conductive structure electrically connecting the first electrode to the first pad; and a second conductive structure electrically connecting the second electrode To the second pad, wherein the first conductive structure is located between the light emitting diode and the first pad, and the second conductive structure overlaps the first magnetic element in a direction perpendicular to the substrate and Does not overlap with this second magnetic element. The light-emitting device according to item 1 of the patent application scope, wherein the light-emitting diode includes a reflective layer on a surface. A method for manufacturing a light-emitting device includes: providing a substrate having a first pad and a second pad; forming a first magnetic element on the substrate; forming a light-emitting diode on a growth substrate Forming a second magnetic element on the side of the light emitting diode; transferring the light emitting diode and the second magnetic element on the substrate, and the second magnetic element and the first magnetic element being magnetically phased; Suction; fixing the light-emitting diode on the substrate; electrically connecting the light-emitting diode and the first pad; and electrically connecting the light-emitting diode and the second pad. According to the manufacturing method described in claim 16, before the light-emitting diode and the second magnetic element are transferred to the substrate, the method further includes: forming a sacrificial layer to cover the second magnetic element and the light-emitting element. A diode; forming an interposer on the second magnetic element and the light emitting diode; removing the sacrificial layer; and removing the growth substrate. According to the manufacturing method described in item 16 of the application, before the light-emitting diode and the second magnetic element are transferred to the substrate, the method further includes: forming a first conductive structure on the first pad, the A first magnetic element surrounds the first conductive structure. According to the manufacturing method described in claim 16, before the light emitting diode and the second magnetic element are transferred to the substrate, the method further includes: forming an adhesive layer on the substrate, and the first magnetic element. Surround the adhesive layer. According to the manufacturing method described in item 16 of the application, before the light-emitting diode and the second magnetic element are transferred to the substrate, the method further includes: transferring the light-emitting diode from the growth substrate to An interposer substrate and a sacrificial layer; forming a tether structure on the light emitting diode; and removing the sacrificial layer.