TWI643300B - 用於在微電子結構中的互連墊之表面修整層 - Google Patents

用於在微電子結構中的互連墊之表面修整層 Download PDF

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TWI643300B
TWI643300B TW105100566A TW105100566A TWI643300B TW I643300 B TWI643300 B TW I643300B TW 105100566 A TW105100566 A TW 105100566A TW 105100566 A TW105100566 A TW 105100566A TW I643300 B TWI643300 B TW I643300B
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layer
electromigration
ductile
microelectronic
nickel
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TW105100566A
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TW201705405A (zh
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史利尼維斯Ｖ 派坦巴拉姆
李奎五
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美商英特爾公司
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    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
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Abstract

一種表面修整層可形成於微電子結構中，其中該表面修整層可包括多層夾層結構。因此，可藉由不同材料層來滿足該夾層結構之所需特性，諸如順應性及電遷移抗性，而非試圖用單個層來達成此等特性。在一個實施例中，該多層夾層結構可包含兩層結構，其中第一層緊鄰焊料互連件形成且包含與該焊料互連件形成延性接頭的材料，且第二層包含形成於該第一層與互連墊之間的具有強電遷移抗性之材料。在其他實施例中，第三層可鄰近該互連墊形成，該第三層包含與該互連墊形成延性接頭的材料。

Description

用於在微電子結構中的互連墊之表面修整層 發明領域
本說明之實施例大體而言係關於微電子裝置製造領域，且更特定而言係關於形成於互連墊上的表面修整層，該等表面修整層用於微電子組件與焊料互連件之電附接。
發明背景
微電子裝置通常由各種微電子組件製成，該等微電子組件包括但不限於至少一個微電子晶粒(諸如微處理器、晶片組、圖形裝置、無線裝置、記憶體裝置、特殊應用積體電路或類似裝置)、至少一個被動組件(諸如電阻器、電容器、電感器及類似組件)，以及用於安裝該等組件的至少一個微電子基板(諸如插入物、母板及類似基板)。各種微電子組件可經由焊料互連件來彼此電氣互連，該等焊料互連件在一個微電子組件上的互連墊與另一微電子組件上的互連墊之間延伸。
微電子工業不斷力求生產出更快且更小之微電子裝置，以供各種電子產品中使用，該等電子產品包括但 不限於可攜式產品，諸如可攜式電腦、數位攝影機、電子平板電腦、蜂巢式電話及類似產品。隨著諸如微電子裝置及微電子基板之微電子組件的尺寸減小，微電子組件之電流密度增加，如將為熟習此項技術者所瞭解。由於此等電流密度增加，設置於互連墊與焊料互連件之間的表面修整層不僅必須在互連墊與焊料互連件之間形成延性互連或「接頭」，而且亦具有足夠強之電遷移抗性以滿足更小微電子組件之最大電流(Imax)需求。因此，需要開發出可提供所需最大電流(Imax)，同時維持互連墊與焊料互連件之間的延性接頭之表面修整層及製造表面修整層之方法。
依據本發明之一實施例，係特地提出一種微電子結構，其包含：一互連墊；該互連墊上的一表面修整層，其中該表面修整層包含一多層夾層結構，該多層夾層結構包括至少一個延性層及至少一個抗電遷移層；以及該表面修整層上的一焊料互連件。
A‧‧‧區域
100‧‧‧微電子封裝
110‧‧‧微電子裝置
112‧‧‧作用表面
114、124、128、152、170‧‧‧互連墊
120‧‧‧微電子插入物/基板
122‧‧‧第一表面
126、156‧‧‧導電路徑
132‧‧‧第二表面
142‧‧‧裝置至插入物/基板的焊料互連件
144‧‧‧封裝至電板/基板的焊料互連件
150‧‧‧微電子電板/基板
154‧‧‧附接表面
160‧‧‧微電子結構
180‧‧‧表面修整層結構
182‧‧‧夾層
184‧‧‧障壁層
186‧‧‧抗氧化及焊料潤濕層
190‧‧‧焊料互連件
200‧‧‧表面修整層
210‧‧‧多層夾層結構
212‧‧‧焊料互連件延性層
214‧‧‧抗電遷移層
216‧‧‧互連墊延性層
300‧‧‧製程
302~306‧‧‧方塊
400‧‧‧計算裝置
402‧‧‧電板
404‧‧‧處理器
406A~406B‧‧‧通訊晶片
408‧‧‧依電性記憶體
410‧‧‧非依電性記憶體
412‧‧‧快閃記憶體
414‧‧‧圖形處理器或CPU
416‧‧‧晶片組
在說明書之結論部分中特定地指出且清楚地請求本揭示案之標的。本揭示案之上述及其他特徵將結合隨附圖式自以下描述及隨附申請專利範圍變得更完全明顯。應瞭解，該等隨附圖式僅描繪根據本揭示案之若干實施例，且因此不應認為該等隨附圖式會限制本揭示案之範疇。將經由使用隨附圖式以額外的特殊性及細節來描述本揭示案，以使得可更容易地確認本揭示案之優點，在圖式 中：圖1為根據本說明之實施例的微電子結構之側面橫截面圖。
圖2為如此項技術中已知的互連墊及焊料互連件的側面橫截面圖，兩者之間設置有表面修整層結構。
圖3為根據本說明之一個實施例的互連墊及焊料互連件的側面橫截面圖，兩者之間設置有表面修整層結構。
圖4為根據本說明之另一實施例的互連墊及焊料互連件的側面橫截面圖，兩者之間設置有表面修整層結構。
圖5為根據本說明之實施例的製造微電子封裝之製程的流程圖。
圖6例示根據本說明之一個實行方案的計算裝置。
較佳實施例之詳細說明
在以下詳細描述中，參考隨附圖式，該等隨附圖式以例示方式展示特定實施例，所請求標的可在該等實施例中實踐。以充分詳情描述此等實施例，以使得熟習此項技術者能夠實踐該標的。應瞭解，儘管各種實施例不同，但各種實施例未必互相排斥。例如，在不脫離所請求標的之精神及範疇的情況下，本文結合一個實施例所描述的特定特徵、結構或特性可在其他實施例內實行。在本說明書內對「一個實施例」或「一實施例」之參考意謂：結合該實施例所描述之特定特徵、結構或特性係包括於本說明內 所包含的至少一個實行方案中。因此，片語「一個實施例」或「在實施例中」之使用未必指同一實施例。此外，應瞭解，在不脫離所請求標的之精神及範疇的情況下，可修改每一所揭示實施例內之單個元件的位置或佈置。因此，以下詳細說明不欲視為限制性意義，且標的之範疇僅藉由恰當解釋之隨附申請專利範圍以及此等隨附申請專利範圍有權要求之等效物的完整範疇來界定。在圖式中，在全部若干視圖中，相同數字指代相同或類似的元件或功能性，且圖式中之元件未必彼此按比例描繪，實情為，可放大或縮小單個元件，以便更容易地理解本說明之情境中的元件。
如本文所使用之「在......之上」、「至」、「在......之間」以及「在......上」等詞可指代一個層相對於其他層之相對位置。「在另一層之上」或「在另一層上」或接合「至另一層」之一個層可直接與另一層接觸或可具有一或多個介入層。「在各層之間」的一個層可直接與該等層接觸或可具有一或多個介入層。
在微電子結構的生產中，通常將微電子封裝安裝於微電子電板/基板上，該微電子電板/基板提供微電子封裝與外部組件之間的電通訊路徑。如圖1中所展示，微電子封裝100可包含微電子裝置110，諸如微處理器、晶片組、圖形裝置、無線裝置、記憶體裝置、特殊應用積體電路或類似裝置，該微電子裝置經由多個焊料互連件142以通常稱為倒裝晶片之組態或受控塌陷晶片連接(「C4」)組態來附接至微電子插入物/基板120之第一表面122。裝置至插入物/ 基板的焊料互連件142可自在微電子裝置110之作用表面112上的互連墊114及在微電子插入物/基板第一表面122上的互連墊124延伸。微電子裝置互連墊114可與微電子裝置110內的積體電路(未展示)處於電通訊。微電子插入物/基板120可包括至少一個導電路徑126及至少一個微電子封裝互連墊128，該至少一個導電路徑自至少一個微電子插入物/基板互連墊124延伸穿過微電子插入物/基板120，該至少一個微電子封裝互連墊在微電子插入物/基板120的第二表面132上或緊鄰微電子插入物/基板120的第二表面132。微電子插入物/基板120可將微電子裝置互連墊114的小間距(微電子裝置互連墊114之間的中心至中心距離)更改成微電子封裝互連墊128之相對更寬的間距。
微電子封裝100可經由多個焊料互連件144附接至微電子電板/基板150，諸如印刷電路板、母板等等，以形成微電子結構160。封裝至電板/基板的焊料互連件144可在微電子封裝互連墊128與在微電子電板/基板150之附接表面154上的大致鏡像互連墊152之間延伸。微電子電板/基板互連墊152可與微電子電板/基板150內的導電路徑(如虛線156所展示)處於電通訊。微電子電板/基板導電路徑156可提供通往外部組件(未展示)之電通訊路徑。
微電子插入物/基板120及微電子電板/基板150均可主要由任何適當材料組成，該材料包括但不限於雙馬來亞醯胺三氮雜苯樹脂、防火劑4級材料、聚醯亞胺材料、玻璃強化環氧樹脂基質材料及類似材料，以及上述材料之層 疊物或多個層。微電子插入物/基板導電路徑126及微電子電板/基板導電路徑156可由任何導電材料組成，該材料包括但不限於諸如銅及鋁的金屬，以及其合金。如將為熟習此項技術者所瞭解，微電子插入物/基板導電路徑126及微電子電板/基板導電路徑156可形成為形成於介電質材料層(未展示)上之多個導電跡線(未展示)，藉由導電的導通體(未展示)來連接該等多個導電跡線。
裝置至插入物/基板的焊料互連件142及封裝至電板/基板的焊料互連件144可由任何適當焊料材料製成，該材料包括但不限於諸如63%錫/37%鉛焊料的鉛/錫合金，以及高錫含量合金(例如90%或更多的錫)，諸如錫/鉍、共晶錫/銀、三元錫/銀/銅、共晶錫/銅以及類似合金。如將為熟習此項技術者所瞭解，可藉由熱量、壓力及/或聲能使焊料回流以將焊料緊固在各別互連墊之間。
如圖2(圖1中標記為A的區域中之任一者的特寫)中所展示，互連墊170可代表圖1之微電子裝置互連墊114、微電子插入物/基板互連墊124、微電子封裝互連墊128以及微電子電板/基板互連墊152中之任一者，且焊料互連件190可代表圖1之裝置至插入物/基板的焊料互連件142及封裝至電板/基板的焊料互連件144中之任一者。如所例示，表面修整層結構180可設置於互連墊170與焊料互連件190之間。如此項技術中已知，表面修整層結構180可包含：鄰接互連墊170(諸如含銅金屬)之夾層182(諸如含鎳金屬)、夾層182上的障壁層184(諸如含鈀材料)，以及障壁層184上的抗 氧化及焊料潤濕層186(諸如含金金屬)。如為熟習此項技術者所瞭解，利用夾層182來提供高導電率特性以便達成所需最大電流(Imax)，並且提供延展性特性以便提供足夠的撓性來吸收對微電子組件的任何實體衝擊，以使得與該等微電子組件所形成之接頭不會碎裂或破裂。對此類已知的表面修整層結構180而言，夾層182之消耗係最大電流(Imax)變小的重要原因。如此項技術中已知，當夾層182之至少一個組分(諸如鎳)擴散至焊料互連件190中時，夾層182之消耗發生。可藉由障壁層184降低此種消耗，其中障壁層184亦可降低焊料互連件190之至少一個組分(諸如錫)的擴散，該擴散可污染互連墊170。然而，此種已知的表面修整層結構180無法滿足未來的最大電流(Imax)要求。儘管可藉由增加障壁層184之厚度來改良最大電流(Imax)，但此種增加可增大障壁層184之脆性，脆性增大可導致接頭破裂，且因此並非解決方案。此外，如將為熟習此項技術者所瞭解，由於增加夾層182之厚度可引起相鄰焊料互連件190之間的橋接，故增加夾層182之厚度亦並非解決方案。
本說明之實施例包括形成多層夾層結構，而非單層夾層結構。因此，可藉由不同材料層來滿足夾層結構之所需特性，諸如延展性及電遷移抗性，而非試圖用單個層來達成所有所需特性。在一個實施例中，多層夾層結構可包含兩層結構，其中第一層緊鄰焊料互連件形成且包含與焊料互連件形成延性連接或接頭的材料，且第二層包含形成於該第一層與互連墊之間的具有強電遷移抗性的材料。 在另一實施例中，多層夾層結構可包含三層結構，其中第一層緊鄰焊料互連件形成且包含與焊料互連件形成延性連接或接頭的材料，第二層包含具有強電遷移抗性的材料，且鄰近互連墊的第三層包含與互連墊形成延性連接或接頭的材料，其中第二層定位於第一層與第三層之間。在其他實施例中，多層夾層結構可包含三個以上層以提供更佳的電遷移抗性，同時維持與焊料互連件或/及互連墊的延性連接或接頭。
如圖3(圖1中標記為A的區域中之任一者的特寫)中所展示，表面修整層200可包括多層夾層結構210，該多層夾層結構包含形成於互連墊170上的抗電遷移層214以及形成於抗電遷移層214上的焊料互連件延性層212。表面修整層200可進一步包含形成於多層夾層結構200上的障壁層184，以及形成於障壁層184上的抗氧化及焊料潤濕層186。
互連墊170可由諸如金屬之任何適當導電材料製成。在一個實施例中，互連墊170包含銅。焊料互連件190可由任何適當焊料材料製成，該焊料材料包括但不限於諸如63%錫/37%鉛焊料的鉛/錫合金，以及高錫含量合金(例如90%或更多的錫)，諸如錫/鉍、共晶錫/銀、三元錫/銀/銅、共晶錫/銅，以及類似合金。
障壁層184可為阻止焊料互連件延性層212之至少一個組分擴散至焊料互連件190中且阻止焊料互連件190之至少一個組分(諸如錫)朝互連墊170擴散的任何材料。在一個實施例中，障壁層184可包含含鈀材料。在特定實施例 中，障壁層184包含鈀及磷。抗氧化層186可為將減少障壁層184及/或多層夾層結構210之氧化的任何適當導電材料。在一個實施例中，抗氧化層186包含金。
焊料互連件延性層212可為任何適當材料，該材料包括但不限於低至中磷含量的鎳材料。出於本說明之目的，低至中磷含量的鎳材料可定義為具有介於約2重量%與10重量%之間的磷含量之鎳材料。
抗電遷移層214可為自該抗電遷移層擴散極少材料或不擴散材料之任何適當材料。在一個實施例中，抗電遷移層214可包括具有極少晶界或不具有晶界之展現合乎需要之導電率的非晶膜或奈米結晶膜。出於本說明之目的，非晶膜或奈米結晶膜可包括但不限於高磷含量鎳材料，其中磷含量介於約11重量%與20重量%之間。在另一實施例中，抗電遷移層214可包括展現所需導電率的高原子量金屬。出於本說明之目的，高原子量金屬可定義為由原子表中的過渡金屬群形成之金屬或金屬合金。在一個實施例中，高原子量金屬可包括鎳、鈷及/或鐵。在其他實施例中，抗電遷移層214可包括任何耐火金屬或其與鎳、鈷及/或鐵的合金。在一個實施例中，耐火金屬可包括鎢、鉬及/或錸。在其他實施例中，抗電遷移層214可包含展現合乎需要之導電率的過渡金屬、耐火金屬及/或額外元素之合金，該額外元素可包括但不限於磷。在一個實施例中，過渡金屬可包括鎳、鐵或鈷，耐火金屬可包括鎢、鉬或錸，且額外元素可為磷。
如圖4(圖1中標記為A的區域中之任一者的特寫)中所展示，表面修整層200可包括多層夾層結構210，該多層夾層結構包含形成於互連墊170上的互連墊延性層216、形成於互連墊延性層216上的抗電遷移層214，以及形成於抗電遷移層214上的焊料互連件延性層212。互連墊延性層216可為任何適當材料，該材料包括但不限於低至中磷含量的鎳材料。表面修整層200可進一步包含形成於多層夾層結構200上的障壁層184，以及形成於障壁層184上的抗氧化層186。
圖5為根據本說明之實施例的製造微電子結構之製程300的流程圖。如方塊302中所闡述，可形成互連墊。可在互連墊上形成表面修整層，其中該表面修整層包含多層夾層結構，該多層夾層結構包括至少一個延性層及至少一個抗電遷移層，如方塊304中所闡述。如方塊306中所闡述，在表面修整層上形成焊料互連件。
圖6例示根據本說明之一個實行方案的計算裝置400。計算裝置400容納電板402。該電板可包括若干微電子組件，該等微電子組件包括但不限於處理器404、至少一個通訊晶片406A、406B、依電性記憶體408(例如DRAM)、非依電性記憶體410(例如ROM)、快閃記憶體412、圖形處理器或CPU 414、數位信號處理器(未展示)、加密處理器(未展示)、晶片組416、天線、顯示器(觸控式螢幕顯示器)、觸控式螢幕控制器、電池、音訊編解碼器(未展示)、視訊編解碼器(未展示)、功率放大器(AMP)、全球定位系統(GPS)裝置、 羅盤、加速計(未展示)、回轉儀(未展示)、揚聲器(未展示)、攝影機，以及大容量儲存裝置(未展示)(諸如硬碟機、光碟片(CD)、數位通用碟片(DVD)等)。微電子組件中之任一者可實體地且電氣地耦接至電板402。在一些實行方案中，微電子組件中之至少一者可為處理器404的一部分。
通訊晶片允許用於將資料傳遞至計算裝置且自計算裝置傳遞資料之無線通訊。「無線」一詞及其派生詞可用以描述可經由使用調變電磁輻射經由非固體媒體來傳達資料的電路、裝置、系統、方法、技術、通訊通道等。該詞並非暗示相關聯的裝置不含有任何引線，儘管在一些實施例中相關聯的裝置可能不含有任何引線。通訊晶片可實行若干無線標準或協定中之任一者，該等無線標準或協定包括但不限於Wi-Fi(IEEE 802.11系列)、WiMAX(IEEE 802.16系列)、IEEE 802.20、長期演進(LTE)、Ev-DO、HSPA+、HSDPA+、HSUPA+、EDGE、GSM、GPRS、CDMA、TDMA、DECT、藍牙、其派生物以及指定為3G、4G、5G及以上的任何其他無線協定。計算裝置可包括多個通訊晶片。例如，第一通訊晶片可專用於較短距離之無線通訊，諸如Wi-Fi及藍牙，且第二通訊晶片可專用於較長距離之無線通訊，諸如GPS、EDGE、GPRS、CDMA、WiMAX、LTE、Ev-DO等等。
「處理器」一詞可指代處理來自暫存器及/或記憶體的電子資料以將該電子資料變換成可儲存在暫存器及/或記憶體中的其他電子資料之任何裝置或裝置之部分。
計算裝置400內的微電子組件中之任一者可包括互連墊上的表面修整層，其中該表面修整層包括多層夾層結構，如上所描述。
在各種實行方案中，計算裝置可為膝上型電腦、迷你筆記型電腦、筆記型電腦、超極緻筆電(ultrabook)、智慧型電話、平板電腦、個人數位助理(PDA)、超行動PC、行動電話、桌上型電腦、伺服器、印表機、掃描器、監視器、機上盒(set-top box)、娛樂控制單元、數位攝影機、可攜式音樂播放器或數位視訊記錄器。在其他實行方案中，計算裝置可為處理資料的任何其他電子裝置。
應瞭解，本說明之標的未必限於圖1至圖6中所例示之特殊應用。該標的可應用於其他微電子裝置及總成應用，如將為熟習此項技術者所瞭解。
以下實例係關於其他實施例，其中實例1為一種微電子結構，該微電子結構包含：互連墊；互連墊上之表面修整層，其中該表面修整層包含多層夾層結構，該多層夾層結構包括至少一個延性層及至少一個抗電遷移層；以及該表面修整層上之焊料互連件。
在實例2中，實例1之標的可任擇地包括：該至少一個延性層包含鎳材料，該鎳材料具有介於約2重量%與10重量%之間的磷含量。
在實例3中，實例1或2之標的可任擇地包括：該至少一個抗電遷移層包含鎳材料，該鎳材料具有介於約11重量%與20重量%之間的磷含量。
在實例4中，實例1或2之標的可任擇地包括：該至少一個抗電遷移層包含高分子量金屬。
在實例5中，實例4之標的可任擇地包括：該高分子量金屬選自由鎳、鈷以及鐵組成的群組。
在實例6中，實例1或2之標的可任擇地包括：該抗電遷移層包含與耐火金屬結合之金屬，該金屬選自由鎳、鈷以及鐵組成的群組。
在實例7中，實例6之標的可任擇地包括：該抗電遷移層進一步包含磷，且其中該耐火金屬選自由鎢、鉬以及錸組成的群組。
在實例8中，實例1或2之標的可任擇地包括：該至少一個抗電遷移層包含非晶層。
在實例9中，實例1或2之標的可任擇地包括：該表面修整層包含互連墊上的第一抗電遷移層以及抗電遷移層上的延性層。
在實例10中，實例1之標的可任擇地包括：該表面修整層包含互連墊上的第一延性層、第一延性層上的抗電遷移層，以及抗電遷移層上的第二延性層。
以下實例係關於其他實施例，其中實例11為一種製造微電子結構的方法，該方法包含：形成互連墊；在該互連墊上形成表面修整層，其中該表面修整層包含多層夾層結構，該多層夾層結構包括至少一個延性層及至少一個抗電遷移層；以及在該表面修整層上形成焊料互連件。
在實例12中，實例11之標的可任擇地包括：形成 表面修整層包含形成至少一個延性層，該至少一個延性層包含鎳材料，該鎳材料具有介於約2重量%與10重量%之間的磷含量。
在實例13中，實例11或12之標的可任擇地包括：形成該至少一個抗電遷移層包含形成鎳材料層，該鎳材料層具有介於約11重量%與20重量%之間的磷含量。
在實例14中，實例11或12之標的可任擇地包括：形成該表面修整層包含形成該至少一個抗電遷移層，該至少一個抗電遷移層包含高分子量金屬。
在實例15中，實例14之標的可任擇地包括：形成該表面修整層包含形成高分子量金屬，該高分子量金屬選自由鎳、鈷以及鐵組成的群組。
在實例16中，實例11或12之標的可任擇地包括：形成該表面修整層包含由與耐火金屬結合之金屬形成抗電遷移層，該金屬選自由鎳、鈷以及鐵組成的群組。
在實例17中，實例16之標的可任擇地包括：形成該抗電遷移層進一步包含磷，且其中形成耐火金屬包含選自由鎢、鉬以及錸組成的群組之金屬。
在實例18中，實例11或12之標的可任擇地包括：形成該至少一個抗電遷移層包含形成非晶層。
在實例19中，實例11或12之標的可任擇地包括：形成該表面修整層包含在互連墊上形成第一抗電遷移層以及在抗電遷移層上形成延性層。
在實例20中，實例11之標的可任擇地包括：形成 該表面修整層包含在互連墊上形成第一延性層；在第一延性層上形成抗電遷移層；以及在抗電遷移層上形成第二延性層。
以下實例係關於其他實施例，其中實例21為一種電子系統，該電子系統包含：電板；以及微電子結構，其附接至電板，其中微電子結構及電板中之至少一者包括：互連墊；該互連墊上之表面修整層，其中該表面修整層包含多層夾層結構，該多層夾層結構包括至少一個延性層及至少一個抗電遷移層；以及該表面修整層上之焊料互連件。
在實例22中，實例21之標的可任擇地包括：該至少一個延性層包含鎳材料，該鎳材料具有介於約2重量%與10重量%之間的磷含量。
在實例23中，實例21或22之標的可任擇地包括：該至少一個抗電遷移層包含鎳材料層，該鎳材料層具有介於約11重量%與20重量%之間的磷含量。
在實例24中，實例21或22之標的可任擇地包括：該至少一個抗電遷移層包含高分子量金屬。
在實例25中，實例24之標的可任擇地包括：該高分子量金屬選自由鎳、鈷以及鐵組成的群組。
在實例26中，實例21或22之標的可任擇地包括：該抗電遷移層包含與耐火金屬結合之金屬，該金屬選自由鎳、鈷以及鐵組成的群組。
在實例27中，實例21或22之標的可任擇地包括：該抗電遷移層進一步包含磷，且其中該耐火金屬選自由 鎢、鉬以及錸組成的群組。
在實例28中，實例21或22之標的可任擇地包括：該至少一個抗電遷移層包含非晶層。
在實例29中，實例21或22之標的可任擇地包括：該表面修整層包含互連墊上的第一抗電遷移層以及抗電遷移層上的延性層。
在實例30中，實例21之標的可任擇地包括：該表面修整層包含互連墊上的第一延性層、第一延性層上的抗電遷移層，以及抗電遷移層上的第二延性層。
因此已詳細描述本說明之實施例，應瞭解，由於本說明之許多明顯變化在不脫離本說明之精神或範疇的情況下為可能的，故藉由隨附申請專利範圍所界定之本說明將不受以上說明中所闡述之特定細節的限制。

Claims (17)

  1. 一種微電子結構，其包含：一互連墊；該互連墊上之一表面修整層，其中該表面修整層包含一多層夾層結構，該多層夾層結構包括該互連墊上之一第一延性層、該第一延性層上之至少一個抗電遷移層、及該至少一個抗電遷移層上之一第二延性層，其中該第一延性層及該第二延性層各自包含一含鎳材料，該含鎳材料具有介於約2%重量與10%重量之間的磷含量，且其中該至少一個抗電遷移層具有介於約11%重量與20%重量之間的磷含量；以及該表面修整層上之一焊料互連件。
  2. 如請求項1之微電子結構，其中該至少一個抗電遷移層包含一高原子量金屬。
  3. 如請求項2之微電子結構，其中該高原子量金屬係選自由鎳、鈷以及鐵所組成的群組。
  4. 如請求項1之微電子結構，其中該抗電遷移層包含與一耐火金屬結合之一金屬，該金屬選自由鎳、鈷以及鐵所組成的群組。
  5. 如請求項4之微電子結構，其中該抗電遷移層進一步包含磷，且其中該耐火金屬係選自由鎢、鉬以及錸所組成的群組。
  6. 如請求項1之微電子結構，其中該至少一個抗電遷移層包含一非晶層。
  7. 一種製造一微電子結構之方法，其包含：形成一互連墊；在該互連墊上形成一表面修整層，其中該表面修整層包含一多層夾層結構，該多層夾層結構包括該互連墊上之一第一延性層、該第一延性層上之至少一個抗電遷移層、及該至少一個抗電遷移層上之一第二延性層，其中該第一延性層及該第二延性層各自包含一含鎳材料，該含鎳材料具有介於約2%重量與10%重量之間的磷含量，且其中該至少一個抗電遷移層具有介於約11%重量與20%重量之間的磷含量；以及在該表面修整層上形成一焊料互連件。
  8. 如請求項7之方法，其中形成該表面修整層包含形成該至少一個抗電遷移層，該至少一個抗電遷移層包含一高原子量金屬。
  9. 如請求項8之方法，其中形成該表面修整層包含形成該高原子量金屬，該高原子量金屬選自由鎳、鈷以及鐵所組成的群組。
  10. 如請求項7之方法，其中形成該表面修整層包含形成包含有與一耐火金屬結合之金屬的該抗電遷移層，該金屬選自由鎳、鈷以及鐵所組成的群組。
  11. 如請求項10之方法，其中該抗電遷移層進一步包含磷，且其中該耐火金屬包含選自由鎢、鉬以及錸所組成的群組之金屬。
  12. 如請求項7之方法，其中形成該至少一個抗電遷移層包含形成一非晶層。
  13. 一種電子系統，其包含：一板；以及一微電子結構，其附接至該板，其中該微電子結構及該板中之至少一者包括：一互連墊；該互連墊上之一表面修整層，其中該表面修整層包含一多層夾層結構，該多層夾層結構包括該互連墊上之一第一延性層、該第一延性層上之至少一個抗電遷移層、及該至少一個抗電遷移層上之一第二延性層，其中該第一延性層及該第二延性層各自包含一含鎳材料，該含鎳材料具有介於約2%重量與10%重量之間的磷含量，且其中該至少一個抗電遷移層具有介於約11%重量與20%重量之間的磷含量；以及該表面修整層上之一焊料互連件。
  14. 如請求項13之電子系統，其中該至少一個抗電遷移層包含一高原子量金屬，該高原子量金屬選自由鎳、鈷以及鐵所組成的群組。
  15. 如請求項13之電子系統，其中該至少一個抗電遷移層包含與一耐火金屬結合的一金屬，該金屬選自由鎳、鈷以及鐵所組成的群組。
  16. 如請求項15之電子系統，其中該至少一個抗電遷移層進一步包含磷，且其中該耐火金屬係選自由鎢、鉬以及錸所組成的群組。
  17. 如請求項13之電子系統，其中該至少一個抗電遷移層包含一非晶層。
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