TWI636722B - 製作撓性電路的方法,由此方法獲得之撓性電路及包含此種撓性電路的智慧卡 - Google Patents
製作撓性電路的方法,由此方法獲得之撓性電路及包含此種撓性電路的智慧卡 Download PDFInfo
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Abstract
本發明係關於一種用於製作撓性電路之方法。該方法包括提供電導體薄片(11)及介電層(50)。該方法亦包括使該介電層(50)與該電導體薄片(11)進行直接接觸且層壓該介電層(50)與該電導體薄片(11)。
該介電層(50)由預浸體組成。因此,該電導體薄片(11)可層壓及黏接地接合於該介電層上而不求助於額外黏接層。
本發明亦係關於一種用於智慧卡之撓性電路,該電路係運用此方法予以製作,且本發明係關於一種包含此種撓性電路之智慧卡模組。
Description
本發明係關於撓性印刷電路之領域。此種撓性印刷電路可(例如)用以生產用於智慧卡之電子模組、RFID天線、用於發光二極體之固持器等等。
下文藉由採取用於智慧卡之電子模組的實例來說明本發明,但本發明可易於轉置至撓性印刷電路之其他應用,且尤其是諸如上文所提及之應用的應用。
智慧卡為對其進行如下多種使用之公眾所熟知:信用卡、用於行動電話之SIM卡、旅行卡、身分證等等。
如圖1所展示,智慧卡通常由剛性載體1組成,剛性載體1係由構成該卡之大部分的諸如PVC、PVC/ABS或聚碳酸酯之塑膠製成,且其中併有經分離地製作之電子模組2。此電子模組2包含大體上具撓性之印刷電路3,其配備有電子晶片100(積體電路)及用於將資料自該晶片傳輸至讀卡器裝置(讀取)或自此裝置傳輸至卡(寫入)之傳輸構件。用於傳輸資料之此等構件可為「接觸」構件、「非接觸」構件,或在其組合該兩個前述構件時被稱為「雙重」。在「接觸」或「雙重」智慧卡中,連接器5包含電連接至晶片100且與卡載體1之表面齊平的接觸
墊15,以用於藉由與讀卡器裝置之電接觸進行連接。
在先前技術中,模組通常係由覆蓋於其側中之至少一者上之具有電導體薄片的介電基板形成,此薄片係(例如)由諸如銅、鋼或鋁或此等金屬中之一者之合金的金屬製成。形成電接觸墊之導電軌道形成於此電導體薄片中。通常用於先前技術中之介電基板係由複合物(環氧樹脂-玻璃)或塑膠(PET、PEN、聚醯亞胺等等)生產。此類型之介電基板大體上薄(其厚度為(例如)約100μm),以便保持與用以製作電子模組之捲盤式(reel-to-reel)或捲筒式(roll-to-roll)輸送方法相容的撓性。
舉例而言,此類型之撓性電路的製作方法則包括:-提供電導體薄片,因此具有第一及第二主側;-提供介電層,此介電層因此亦具有第一及第二主側;及-層壓電導體薄片與介電層。
電導體薄片通常藉助於通常為熱固性(但可視情況為熱熔體)及電絕緣之薄黏接層(其厚度為(例如)約20μm)而黏接地接合至介電層,該薄黏接層預先塗佈於該介電層上。
本發明之一個目標係簡化此類型之方法。
出於此目的,提供一種諸如上文所提及之方法的方法,該方法此外包括在層壓該電導體薄片與該介電層之前通過該介電層穿通至少一個連接井或孔的步驟。在已層壓該電導體薄片與該介電層之後,該電導體薄片因此在至少一個連接井之底部處形成連接區域。另外,使用由預浸體組成之介電層。因此,有可能在該介電層之第一側與該電導體薄片之第一側進行直接接觸時進行層壓該電導體薄片與該介電層的該步驟。換言之,表達「直接接觸」在此文件中意謂層壓該電導體薄片與該介電層而無任何其他中間層,且更特定地在其間無額外黏接層。
憑藉此配置,有可能移除用於先前技術之方法之實施中的步驟,其在於運用黏接劑來塗佈該介電層。此配置因此使此類型之方法更經濟。
在此文件中,預浸體為由浸漬有熱固性(亦即,熱可固化)樹脂(亦被稱作基質)之(無光澤的編織玻璃纖維)增強體組成的半成品。該樹脂必須經熱固化以獲得成品。
通過該介電層穿通至少一個連接井的該步驟係在層壓該介電層與該電導體薄片的該步驟之前進行,以便使此穿通具有諸如衝壓之經濟、快速及機械方式。因為該等連接井之直徑通常為約600μm至800μm,所以重要的是使該預浸體之樹脂不在遍及該電導體之表面的該等井之底部中流動。尤其出於此原因,並不明顯的是運用尚未穩定(例如,因為尚未固化)且可因此顯著地流動之介電基板來替換先前技術之熱穩定介電基板(亦即,在對於此類型之方法習知的操作溫度下熱穩定,且通常低於300℃)。具體言之,有必要防止該預浸體之樹脂覆蓋該等井之底部之導電區域及損害良好後續連接。該預浸體因此經選擇使得其根據標準IPC-TM-650 2.3.17.2所量測之流動保持低於或等於0.7mm。通常,有可能藉由增加該樹脂之黏度(例如,藉由將填充劑添加至此樹脂或藉由預固化該樹脂)來限制該樹脂之流動。然而,將在(一方面)並不足夠黏且流動得過多但黏接至該電導體薄片的樹脂與(另一方面)並不流動(「非流動」樹脂)但將不會在為此方法之實施所需要之溫度(低於220℃)及壓力(2巴至6巴)下具有所探尋黏接屬性的樹脂之間找到折衷。
此外,以上方法視情況兼之包含以下特徵中之一者或其他者,該等特徵彼此獨立地或以其全部或一些之組合被考慮:-該預浸體包括樹脂浸漬增強體;-該方法包括在層壓該電導體薄片與該介電層的該步驟之後固化
該樹脂的步驟;-該樹脂係選自包括環氧樹脂及不飽和聚酯樹脂之清單;-該增強體係選自編織纖維紡織物、非編織纖維紡織物、玻璃纖維、聚酯纖維、碳纖維及芳族聚醯胺纖維;-層壓該電導體薄片與該介電層的該步驟係在包括於80℃與200℃之間且較佳地包括於100℃與150℃之間的溫度下進行;此溫度適應於該層壓步驟之實施模式;舉例而言,該層壓步驟係以捲盤式或捲筒式輸送方式進行,且該介電層(預浸體)係在與該電導體薄片層壓之前在滾筒之下被預加熱,該滾筒自身亦被加熱;在此狀況下,該滾筒、該電導體薄片與該介電層之間的接觸時間極短;-層壓該電導體薄片與該介電層的該步驟係在包括於2巴與6巴之間的壓力下進行,尤其是當該層壓步驟係以捲盤式或捲筒式輸送方式進行時;及-穿通至少一個連接井的該步驟係在將第一電導體薄片層壓於該介電層之第一側上之後進行,且將第二電導體薄片層壓於該介電層之第二側上。
根據另一態樣,本發明為一種由以上方法獲得且包括以下各者之撓性電路:-介電層,其具有第一及第二側,此介電層由預浸體組成;-電導體薄片,其具有第一及第二側,至少部分地覆蓋該介電層,該介電層之該第一側與該電導體薄片之該第一側進行直接接觸;及-至少一個連接井,其通過該介電層,該電導體薄片在至少一個連接井之底部處形成連接區域。
根據又一態樣,本發明為一種智慧卡,其包含卡本體及該卡本體中之空腔,且在此空腔中置放有電子模組,該電子模組包含諸如上
文所提及之撓性電路,該撓性電路包含(例如)使用熱熔黏接劑而固定至該卡本體之區。
下文描述用於製作根據本發明之撓性電路的例示性方法。其係關於智慧卡之領域,但如已經提及,可易於自此處所描述之應用轉置其他領域中之應用(RFID天線、LED等等)。
如圖1所展示,智慧卡1包含模組2。模組2包括撓性電路3,其配備有連接器5,及晶片100。模組2通常係以插入至卡1中之空腔4中之分離元件的形式而生產。
撓性電路3因此包含具有複數個接點15之連接器5,晶片100連接至複數個接點15。撓性電路3經展示(頂部)為自其前側6(接觸側)所見。其亦經展示(底部)為自其背側7所見。如此展示之撓性電路3對應於用於「接觸」卡之單側撓性電路。然而,舉例而言,其可同樣很好地為用於「雙重」卡之雙側撓性電路的問題。
圖2a至圖2i示意性地說明用於製作撓性電路3的根據本發明之例示性方法之各種步驟。
此方法包括提供(圖2a)由介電質組成之基板50。此介電質由預浸體組成。此預浸體係由浸漬有環氧樹脂之纖維狀材料形成。此纖維狀材料為(例如)編織玻璃纖維編織物。此玻璃纖維編織物屬於(例如)根據IPC碼之1080類型,但其可較厚。
基板50之厚度大於50μm,且較佳地大於75μm。舉例而言,此厚度包括於90μm與120μm之間。
基板50之組分預浸體屬於「低流動」類型。舉例而言,其根據標準IPC-TM-650 2.3.17.2所量測之流動低於或等於0.7mm。此類型之預浸體係(例如)由公司Doosan®、Rogers®、Isola®、TUC®、Elite Materials®或ITEQ®出售。
接著穿通基板50以形成連接井9、10(圖2b),連接井9、10之直徑包括於(例如)300μm與1000μm之間。作為變體(未圖示),除了連接井9、10以外,基板亦可經穿通以形成隨後將容納有晶片100之保留區(reserve)。特別是在層壓電導體薄片11期間,為了避免緊接於此穿通步驟產生缺陷(例如,與沈積於基板50上之粒子相關聯的額外厚度),使用具有「無灰塵」品質之預浸體。此品質亦使有可能在不損壞穿孔周圍之材料的情況下獲得較高穿通品質(參見下文),此損壞可在光微影、蝕刻或電沈積之後續步驟期間產生缺陷(例如,藉由穿透樹脂與纖維之間的槽)。
在後繼步驟中,層壓基板50與電導體薄片11。舉例而言,此導體薄片11為銅薄片(但其亦可由鋼或鋁薄片或如下此等金屬中之一者之合金組成:銅、鋼及鋁)。舉例而言,其厚度為約18μm或35μm。此層壓步驟係在高於預浸體之熱熔溫度的溫度下進行。在超出此熱熔溫度的情況下,預浸體變黏。舉例而言,預浸體之熱熔溫度包括於100℃與150℃之間。
舉例而言,用以將導體薄片11層壓於基板50上之壓力包括於2巴與6巴之間。
在此步驟之後,在包括於取決於樹脂之性質之固化溫度範圍內的溫度下固化預浸體以便使其結構定形。舉例而言,該溫度為180℃。在固化之後,預浸體足夠穩定以在無顯著降解之情況下進行後繼步驟。
接著將乾光阻膜12層壓於導體薄片11之自由側上(圖2d)。接下來,通過遮罩而曝光此光阻膜12以便界定用於電路之圖案(圖2e)且形成撓性印刷電路。以化學方式顯影未經曝光之光阻膜12(圖2f),之後在未受到光阻膜12保護之區中以化學方式蝕刻導電層11。接著溶解(剝離)光阻膜12之經曝光區,且藉由以一或多個步驟進行電鍍來金屬化在蝕刻導電層11之後獲得的軌道及接點以形成(例如)鎳層13以及金或鈀或銀層14(圖2g)。
上文所描述之方法的某些步驟係特定於生產用於智慧卡之模組2,但當然,諸如層壓基板50與電導體薄片11之步驟的步驟及蝕刻或金屬化之後續步驟可用於其他應用。
如此生產之撓性電路3可用以將晶片100連接至接點15且以各種微電子裝配技術來生產電子模組2。
因此,圖2h示意性地展示(例如)使用黏接劑而將晶片100黏接地接合至基板50之步驟的結果。晶片100黏接地接合至撓性電路之背側7,且藉由用直徑為25μm之金製成的連接電線102而連接至撓性電路之前側6,該晶片及該等電線則受到囊封樹脂103保護。
替代地,如圖3所展示,「覆晶」技術允許將晶片100黏接地接合至基板50之背側7。接著藉由位於晶片100之下的導電凸塊104而將晶片100連接至撓性電路之前側6。模組2因此包含憑藉收容於連接井9中之導電凸塊104而直接地電連接至接點15之晶片100。晶片100視情況亦被囊封。
接著將電子模組2(諸如圖2h及圖3所說明之電子模組)插入至空腔4中。可運用熱熔黏接劑16而將模組2緊固於空腔4中。
當然,有可能藉由在對應於圖2c之步驟的同時或之前或之後將第二導體薄片(由銅或另一合金製成)熱層壓於基板50上來生產雙側結構。舉例而言,在圖2a所說明之步驟之前,將第一導體薄片層壓於預
浸體上。接下來,如在圖2b所說明之步驟中,穿通包括該預浸體及此第一導體薄片之錯合物。接下來,如此穿通之錯合物收納第二導體薄片,此薄片層壓於尚未收納第一導體薄片的預浸體之側上。為了層壓第一導體薄片與第二導體薄片,使用預浸體之熱熔黏接屬性以將第一導體薄片及第二導體薄片固定至基板50。然而,應注意,若第二導體薄片之層壓相較於第一導體薄片之層壓係在較高溫度下進行,則相較於在生產單側基板(亦即,在單一側上具有一導體薄片)之狀況下,在雙側基板(亦即,在每一側上具有一導體薄片)之狀況下,流動可甚至更高且因此造成甚至更關鍵的問題。在固化之後,類似於上文所描述之光微影及蝕刻步驟的光微影及蝕刻步驟接著允許將電路(導電軌道、接點、連接墊、天線等等)界定於兩個側中之每一者上。
替代地,代替上文所描述之光微影及蝕刻技術,亦有可能憑藉預浸體基板50之熱熔黏接屬性而將在導體薄片中預切割之電路(引線框架技術)層壓及直接黏接地接合於預浸體基板50之側中之一者或另一者或兩者上。
在上文所提及之所有狀況下,有必要在層壓步驟之後進行合適熱處理以便固化預浸體。舉例而言,使固化步驟在180℃下進行幾個小時(例如,一個或兩個小時之平線區,及向上及向下溫度斜坡)。
若有必要由上文所描述之方法或其變體獲得電路之配置及功能性,則有可能金屬化通過基板50之連接井9、10中之至少某一者。具體言之,在如上文所指示之具有「無灰塵」品質之預浸體的情況下,有可能獲得具有潔淨邊緣之經穿通切口,其中沒有纖維延伸大於(例如)100μm而至用作連接電線102之焊接的穿孔中。
上文所描述之方法及其變體的一個優點在於如下事實:其可使用供捲繞介電質或導體之帶的捲筒或捲盤而以捲筒式或捲盤式輸送方式予以實施。在此狀況下,預浸體之抗拉強度參數的值可為關鍵的。
舉例而言,此等參數具有以下值:-高於或等於3GPa之縱向楊氏模數(Young's modulus)(在自一個捲筒或捲盤至另一捲筒或捲盤之延行方向上);-高於或等於1%之斷裂伸長率(例如,最大值為10%);及-高於或等於50MPa之屈服強度。
1‧‧‧卡本體/卡載體/智慧卡
2‧‧‧電子模組
3‧‧‧撓性電路/印刷電路
4‧‧‧空腔
5‧‧‧連接器
6‧‧‧撓性電路之前側
7‧‧‧撓性電路之背側
9‧‧‧連接井
10‧‧‧連接井
11‧‧‧電導體薄片/導電層
12‧‧‧光阻膜
13‧‧‧鎳層
14‧‧‧金或鈀或銀層
15‧‧‧接觸墊/接點
16‧‧‧熱熔黏接劑
50‧‧‧介電層/基板
100‧‧‧電子晶片
102‧‧‧連接電線
103‧‧‧囊封樹脂
104‧‧‧導電凸塊
在閱讀詳細描述及隨附圖式後,本發明之其他特徵及優點就將變得顯而易見,在圖式中:-圖1以透視圖示意性地展示意欲收納撓性電路之智慧卡;-圖2a至圖2i示意性地展示用於製作印刷電路之例示性方法及插入此印刷電路的各種步驟;且-圖3示意性地展示圖2a至圖2i所說明之方法之步驟2h的變體。
Claims (10)
- 一種用於製作撓性電路(3)之方法,其包括:提供電導體薄片(11),其具有第一側及第二側;提供介電層(50),其具有第一側及第二側;通過該介電層穿通至少一個連接井;及在穿通至少一個連接井之後,層壓該電導體薄片(11)與該介電層(50),該電導體薄片(11)在至少一個連接井之底部處形成連接區域;其特徵在於該介電層由預浸體組成,該預浸體包括樹脂浸漬增強體;穿通至少一個連接井的該步驟係在層壓該介電層(50)與該電導體薄片(11)之該第一側之前進行;層壓該電導體薄片(11)與該介電層(50)的該步驟係在該介電層(50)之該第一側與該電導體薄片(11)之該第一側進行直接接觸時進行;且在層壓該電導體薄片(11)與該介電層(50)的該步驟之後進行固化該樹脂的步驟。
- 如請求項1之方法,其中層壓該電導體薄片(11)與該介電層(50)的該步驟係在80℃與200℃間的溫度及在2巴與6巴間的壓力下連續進行。
- 如請求項1或2之方法,其中該預浸體包括樹脂浸漬增強體,該樹脂係選自包括環氧樹脂及不飽和聚酯樹脂之清單。
- 如請求項2之方法,其中該增強體係選自編織纖維紡織物、非編織纖維紡織物、玻璃纖維、聚酯纖維、碳纖維及芳族聚醯胺纖維。
- 如請求項1或2之方法,其中該預浸體具有低於或等於0.7mm之流動,如根據標準IPC-TM-650 2.3.17.2所量測。
- 如請求項1或2之方法,其中穿通至少一個連接井的該步驟係在將第一電導體薄片層壓於該介電層(50)之該第一側上之後進行,且其中將第二電導體薄片層壓於該介電層(50)之該第二側上。
- 一種撓性電路(3),其包括:介電層(50),其具有第一側及第二側;電導體薄片(11),其具有第一側及第二側,至少部分地覆蓋該介電層(50);及至少一個連接井,其通過該介電層,該電導體薄片(11)在至少一個連接井之底部處形成連接區域;其特徵在於該介電層由預浸體組成,該介電層(50)之該第一側與該電導體薄片(11)之該第一側進行直接接觸,且該預浸體在該介電層(50)與該薄片(11)之該第一側直接接觸之後被固化。
- 如請求項7之撓性電路,其中該預浸體包括樹脂浸漬增強體,此樹脂係選自包括環氧樹脂及不飽和聚酯樹脂之清單。
- 如請求項8之撓性電路,其中該增強體係選自編織纖維紡織物、非編織纖維紡織物、玻璃纖維、聚酯纖維、碳纖維及芳族聚醯胺纖維。
- 一種智慧卡,其包含卡本體(1)及該卡本體中之空腔(4),且在此空腔中置放有電子模組(2),該電子模組(2)包含如請求項7至9中任一項之撓性電路(3),該撓性電路(3)包含固定至該卡本體(1)之區。
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FR1552933A FR3034614A1 (fr) | 2015-04-03 | 2015-04-03 | Procede de fabrication d’un circuit flexible, circuit flexible obtenu par ce procede et carte a puce comportant un tel circuit flexible |
??1552933 | 2015-04-03 |
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TW201703605A TW201703605A (zh) | 2017-01-16 |
TWI636722B true TWI636722B (zh) | 2018-09-21 |
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TW105110632A TWI636722B (zh) | 2015-04-03 | 2016-04-01 | 製作撓性電路的方法,由此方法獲得之撓性電路及包含此種撓性電路的智慧卡 |
Country Status (4)
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EP (1) | EP3076769B1 (zh) |
CN (1) | CN106061126B (zh) |
FR (1) | FR3034614A1 (zh) |
TW (1) | TWI636722B (zh) |
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CN109689955B (zh) | 2016-04-07 | 2022-04-29 | 先进E纺织品有限公司 | 关于结合有电子装置的织物的改进 |
FR3095285B1 (fr) * | 2019-04-19 | 2022-11-11 | Linxens Holding | Module de capteur biométrique pour carte à puce et procédé de fabrication d’un tel module |
FR3098371B1 (fr) * | 2019-07-05 | 2021-09-24 | Linxens Holding | Dispositif de connexion de carte a puce sur textile |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW423088B (en) * | 1998-01-09 | 2001-02-21 | Samsung Electronics Co Ltd | Reel printed circuit board for chip on board packages and method for manufacturing packages using the same |
TWI223268B (en) * | 2001-07-27 | 2004-11-01 | Hitachi Ltd | Nonvolatile memory device and data processing system |
TW200840012A (en) * | 2007-02-21 | 2008-10-01 | Samsung Electronics Co Ltd | Semiconductor package, integrated circuit cards incorporating the semiconductor package, and method of manufacturing the same |
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US5622588A (en) * | 1995-02-02 | 1997-04-22 | Hestia Technologies, Inc. | Methods of making multi-tier laminate substrates for electronic device packaging |
KR101886340B1 (ko) * | 2012-06-27 | 2018-08-09 | 엘지이노텍 주식회사 | 스마트 ic모듈 및 그 제조방법 |
FR3003722A1 (fr) * | 2013-03-19 | 2014-09-26 | Linxens Holding | Procede de fabrication d'un circuit imprime flexible, circuit imprime flexible obtenu par ce procede et module de carte a puce comportant un tel circuit imprime flexible |
-
2015
- 2015-04-03 FR FR1552933A patent/FR3034614A1/fr active Pending
-
2016
- 2016-04-01 TW TW105110632A patent/TWI636722B/zh not_active IP Right Cessation
- 2016-04-01 EP EP16163485.2A patent/EP3076769B1/fr active Active
- 2016-04-01 CN CN201610321611.5A patent/CN106061126B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW423088B (en) * | 1998-01-09 | 2001-02-21 | Samsung Electronics Co Ltd | Reel printed circuit board for chip on board packages and method for manufacturing packages using the same |
TWI223268B (en) * | 2001-07-27 | 2004-11-01 | Hitachi Ltd | Nonvolatile memory device and data processing system |
TW200840012A (en) * | 2007-02-21 | 2008-10-01 | Samsung Electronics Co Ltd | Semiconductor package, integrated circuit cards incorporating the semiconductor package, and method of manufacturing the same |
Also Published As
Publication number | Publication date |
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EP3076769A1 (fr) | 2016-10-05 |
EP3076769B1 (fr) | 2017-12-06 |
CN106061126B (zh) | 2019-05-07 |
FR3034614A1 (fr) | 2016-10-07 |
TW201703605A (zh) | 2017-01-16 |
CN106061126A (zh) | 2016-10-26 |
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