TWI634614B - Through-type furnace for substrates and die bonder - Google Patents

Through-type furnace for substrates and die bonder Download PDF

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Publication number
TWI634614B
TWI634614B TW103139199A TW103139199A TWI634614B TW I634614 B TWI634614 B TW I634614B TW 103139199 A TW103139199 A TW 103139199A TW 103139199 A TW103139199 A TW 103139199A TW I634614 B TWI634614 B TW I634614B
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substrate
channel
longitudinal slit
passage
holes
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TW103139199A
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Chinese (zh)
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TW201521144A (en
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古朵 蘇特
凱文 多曼席克
丹尼爾安德列斯 薛雷耳
瑞托 維伯
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貝西瑞士股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/04—Heating appliances
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/08—Auxiliary devices therefor
    • B23K3/087—Soldering or brazing jigs, fixtures or clamping means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Tunnel Furnaces (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Furnace Details (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

一種用於基板(3)的貫通式爐包括：爐(1)，爐(1)具有通道(2)；和運輸系統，用於將基板(3)運輸通過通道(2)。通道(2)由基部(4)、前側壁(5)、後側壁(6)和頂部(7)界定。基部(4)包含多個第一孔(8)，所述多個第一孔(8)能夠連接到保護氣體源(9)，使得在操作期間能夠供給保護氣體。通道(2)的前側壁(5)包括縱向狹縫(11)，縱向狹縫(11)平行於通過方向(10)延伸且由底邊緣(12)和上邊緣(13)界定。運輸系統包括至少一個夾子(15)，用於將基板(3)運輸通過通道(2)。夾子(15)能沿通道(2)的縱向狹縫(11)來回移動。這樣的貫通式爐特別適於用於軟焊晶粒接合器中。 A through-type furnace for a substrate (3) comprises: a furnace (1) having a passage (2); and a transport system for transporting the substrate (3) through the passage (2). The channel (2) is defined by a base (4), a front side wall (5), a rear side wall (6) and a top portion (7). The base (4) comprises a plurality of first holes (8) connectable to a shielding gas source (9) such that a shielding gas can be supplied during operation. The front side wall (5) of the channel (2) comprises a longitudinal slit (11) extending parallel to the direction of passage (10) and defined by the bottom edge (12) and the upper edge (13). The transport system includes at least one clip (15) for transporting the substrate (3) through the channel (2). The clip (15) is movable back and forth along the longitudinal slit (11) of the channel (2). Such through-type furnaces are particularly suitable for use in soft-welded die bonders.

Description

用於基板的貫通式爐和晶粒接合器 Through-type furnace and die bonder for substrates

本發明涉及一種用於基板的貫通式爐。貫通式爐包括帶有工作開口的至少一個處理站，在所述至少一個處理站處，在該領域中通常被稱為“晶粒”的部件被施加到基板。本發明進一步涉及具有這樣的貫通式爐的安裝設備，該安裝設備被稱為晶粒接合器。“晶粒”的示例尤其是半導體晶片，但亦是電容器、金屬片晶(platelet)等。 The present invention relates to a through furnace for a substrate. The through furnace includes at least one processing station with a working opening at which components commonly referred to in the art as "grains" are applied to the substrate. The invention further relates to a mounting apparatus having such a through furnace, which is referred to as a die bonder. Examples of "grains" are, in particular, semiconductor wafers, but are also capacitors, metal platelets, and the like.

在半導體晶片的安裝中一般慣例是：借助於焊料將半導體晶片(主要是功率半導體)連接到基板，以便經由焊料連接確保在操作期間發生的從半導體晶片的熱損失的有效耗散。然而，其他“晶粒”也被焊接到基板上。 It is a common practice in the mounting of semiconductor wafers to connect semiconductor wafers (primarily power semiconductors) to the substrate by means of solder in order to ensure efficient dissipation of heat losses from the semiconductor wafers that occur during operation via solder connections. However, other "grains" are also soldered to the substrate.

金屬基板(所謂的導線架)主要被用作基板，其中半導體晶片被焊接到晶片島上，晶片島被一個接一個地配置並且較佳地彼此相鄰。也使用單位基板(single-place substrate)，單位基板也被稱為所謂的單一基板。這樣的單位基板由陶瓷片晶組成，例如，該陶瓷 片晶在兩側上被金屬層覆蓋。基板在迴圈中通常被供給到焊接站、分配站、然後到接合站，在焊接站處施加焊料，在分配站處將焊料分配在基板位置上，在接合站處借助於拾放(pick-and-place)系統將半導體晶片放置在液態焊料部分上。導線架包括沿它們的縱向邊緣配置的孔，銷或指形件接合到這些孔中用於運輸導線架。適於該處理的晶粒接合器由申請人以名稱DB2009 SSI出售。該晶粒接合器包括貫通式爐，該貫通式爐被形成為通道或隧道，基板通過該通道或隧道被運輸到焊接站、分配站和接合站。借助於指形件進行基板的向前進給，這些指形件設有齒，能夠被升降和來回移動，其中每個指形件在向前方向上移動基板。 Metal substrates (so-called lead frames) are mainly used as substrates in which semiconductor wafers are soldered to wafer islands, which are arranged one after another and are preferably adjacent to each other. A single-place substrate is also used, and a unit substrate is also referred to as a so-called single substrate. Such a unit substrate is composed of ceramic plate crystals, for example, the ceramic The lamellae are covered by a metal layer on both sides. The substrate is typically fed to the welding station, the dispensing station, and then to the joining station in the loop, where the solder is applied, at the dispensing station the solder is dispensed at the substrate position, and at the joining station by pick and place (pick- The and-place system places the semiconductor wafer on the liquid solder portion. The leadframe includes apertures disposed along their longitudinal edges into which pins or fingers engage for transporting the leadframe. A die bonder suitable for this process is sold by the applicant under the name DB2009 SSI. The die bonder includes a through furnace formed as a passage or tunnel through which the substrate is transported to a welding station, a distribution station, and a joining station. The advancement of the substrate is carried out by means of fingers which are provided with teeth which can be moved up and down and moved back and forth, wherein each finger moves the substrate in the forward direction.

本發明是基於開發具有較靈活運輸系統的貫通式爐的目的。 The present invention is based on the development of a through-type furnace having a more flexible transportation system.

根據本發明，用於基板的貫通式爐包括爐和運輸系統，所述爐具有通道，所述運輸系統用於將所述基板運輸通過所述通道，其中所述通道由基部、前側壁、後側壁和頂部界定，所述基部包含多個第一孔，所述多個第一孔能夠連接到保護氣體源，以便在操作期間供給保護氣體，所述通道的所述前側壁包括縱向狹縫，所述縱向狹縫平行於通過方向延伸，並且所述縱向狹縫由底邊緣和上邊緣界定，所述運輸系統包括至少一個夾子，所述至少一個夾子用於將所述基板運輸通過所述通道，並且所述夾子能夠沿著所述通道的所述縱向狹縫來回移動。 According to the present invention, a through-type furnace for a substrate includes a furnace and a transportation system, the furnace having a passage for transporting the substrate through the passage, wherein the passage is provided by a base, a front side wall, and a rear a sidewall and a top defining, the base including a plurality of first apertures connectable to a source of shielding gas to supply a shielding gas during operation, the front sidewall of the channel comprising a longitudinal slit, The longitudinal slit extends parallel to the direction of passage, and the longitudinal slit is defined by a bottom edge and an upper edge, the transport system including at least one clip for transporting the substrate through the channel And the clip is movable back and forth along the longitudinal slit of the channel.

較佳地，在所述縱向狹縫的所述底邊緣的與所述通道面對的一側上配置多個第二孔，所述多個第二孔能夠連接到所述保護氣體源。 Preferably, a plurality of second holes are disposed on a side of the bottom edge of the longitudinal slit facing the passage, the plurality of second holes being connectable to the source of shielding gas.

較佳地，所述縱向狹縫的所述底邊緣由窄條形成，所述窄條相對於所述通道的所述基部被降低預定距離。 Preferably, the bottom edge of the longitudinal slit is formed by a strip that is lowered by a predetermined distance relative to the base of the channel.

可以在所述縱向狹縫的所述底邊緣的所述窄條中形成溝槽，並且所述第二孔可以通入到所述溝槽中。 A groove may be formed in the narrow strip of the bottom edge of the longitudinal slit, and the second hole may open into the groove.

所述通道可以被再分成至少兩個區域，並且所述溝槽可以至少在從一個區域到下一個區域的一個過渡點處被分隔壁中斷。 The channel may be subdivided into at least two regions, and the trench may be interrupted by the partition wall at least at a transition point from one region to the next.

所述通道可以被再分成至少兩個區域，每個區域可以與若干所述第二孔關聯，並且同一區域的所述第二孔可以彼此連接並且可以能夠經由單獨的流量控制閥連接到所述保護氣體源。 The channel may be subdivided into at least two regions, each region may be associated with a number of the second holes, and the second holes of the same region may be connected to each other and may be connectable to the via a separate flow control valve Protect the gas source.

根據本發明，晶粒接合器具有貫通式爐，所述貫通式爐包括加熱區域和冷卻區域，所述加熱區域和所述冷卻區域被再分成若干區域，並且所述晶粒接合器被編程用於輸入參數並用於根據這些參數將所述基板運輸通過所述貫通式爐，所述參數為每個區域確定溫度並確定運輸速度和/或停留時間。 According to the present invention, a die bonder has a through furnace including a heating zone and a cooling zone, the heating zone and the cooling zone being subdivided into a plurality of zones, and the die bonder is programmed The parameters are input and used to transport the substrate through the through-furnace according to the parameters, the parameters determining the temperature for each zone and determining the transport speed and/or residence time.

被併入到該說明書並且組成該說明書的一部分的附圖示出本發明的一個或更多個實施例，並且附圖與詳細的說明一起用於解釋本發明的原理和實施。附圖沒有按比例畫出。 The accompanying drawings, which are incorporated in FIG. The drawings are not drawn to scale.

1‧‧‧爐 1‧‧‧ furnace

2‧‧‧通道 2‧‧‧ channel

3‧‧‧基板 3‧‧‧Substrate

4‧‧‧基部 4‧‧‧ base

5‧‧‧前側壁 5‧‧‧ front side wall

6‧‧‧後側壁 6‧‧‧back side wall

7‧‧‧頂部 7‧‧‧ top

8‧‧‧第一孔 8‧‧‧ first hole

9‧‧‧保護氣體源 9‧‧‧Protective gas source

10‧‧‧通過方向 10‧‧‧Direction

11‧‧‧縱向狹縫 11‧‧‧ longitudinal slit

12‧‧‧底邊緣 12‧‧‧ bottom edge

13‧‧‧上邊緣 13‧‧‧ upper edge

14‧‧‧溝槽 14‧‧‧ trench

15‧‧‧夾子 15‧‧‧ clip

16‧‧‧導軌 16‧‧‧rails

17‧‧‧嵌件 17‧‧‧Inlays

18‧‧‧第二孔 18‧‧‧ second hole

19‧‧‧分隔壁 19‧‧‧ partition wall

20‧‧‧氣體線路 20‧‧‧ gas lines

21‧‧‧流量控制閥 21‧‧‧Flow control valve

22‧‧‧短部 22‧‧‧ Short

23‧‧‧入口開口 23‧‧‧ Entrance opening

24‧‧‧短部 24‧‧‧ Short

25‧‧‧出口開口 25‧‧‧Export opening

圖1、圖2示出根據第一實施例和第二實施例的用於基板的貫通式爐的部分的頂視圖；圖3示出該貫通式爐的剖視圖；並且圖4示出圖3的放大剖面圖。 1 and 2 are top views of a portion of a through furnace for a substrate according to the first embodiment and the second embodiment; Fig. 3 is a cross-sectional view of the through furnace; and Fig. 4 is a view of Fig. 3 Zoom in on the profile.

圖1和圖2示出根據第一實施例和第二實施例的用於基板的貫通式爐的部分的頂視圖，這些部分對於理解本發明是必要的。基板例如是具有多個晶片島的導線架，或者是單位基板。圖3示出根據圖2的實施例的貫通式爐的橫向於通過方向延伸的剖視圖。圖4示出圖3的放大剖面圖。貫通式爐包括：爐1，該爐1具有通道2；和運輸系統，該運輸系統用於將基板3運輸通過該通道2到處理站或到若干接連配置的處理站。這樣的處理站例如是焊接站、分配站和接合站，在焊接站處將焊料施加到基板，在分配站處將焊料分配在基板位置上，在接合站處將半導體晶片施加到基板。當半導體晶片或基板的後側已經被塗布有繼而導致焊接連接的相應物質時，能夠省略焊接站和分配站。通道2由基部4、前側壁5、後側壁6和頂部7界定。該頂部7在處理站處設有相應的工作開口。基部4設有多個第一孔8，在操作期間能夠經由所述多個第一孔8輸送由保護氣體源9供給的保護氣體。經常使用的保護氣體是氮氣、合成氣體或其他反應性氣體。重要的是保護氣體不包含任何 氧氣。在基部4中第一孔8的密度通常在通道2的不同區域中不同。第一孔8的密度和/或它們的直徑能夠尤其在處理站的區域中較大，因為保護氣體的一部分經由相應的工作開口逸出。通道2的前側壁5包括縱向狹縫11，該縱向狹縫11平行於通過方向10延伸。縱向狹縫11由底邊緣12和上邊緣13界定，其中底邊緣12與基部4齊平，或者如圖3中所示相對於基部4降低該底邊緣12。運輸系統包括至少一個夾子15，所述至少一個夾子15具有兩個夾爪用於將基板3運輸通過通道2。夾子15被安裝在導軌16(僅部分地示出)上並且能夠被來回移動，該導軌16平行於通道2的縱向狹縫11延伸。所述至少一個夾子15將基板3一個接一個地運輸到爐1的處理站。為了圖示的清晰的原因，圖1和圖2示出僅一個基板3和僅一個夾子15。 1 and 2 show top views of portions of a through-furnace for a substrate according to the first embodiment and the second embodiment, which portions are necessary for understanding the present invention. The substrate is, for example, a lead frame having a plurality of wafer islands, or a unit substrate. Figure 3 shows a cross-sectional view of the through-furnace according to the embodiment of Figure 2 extending transversely to the direction of passage. Fig. 4 shows an enlarged cross-sectional view of Fig. 3. The through furnace comprises: a furnace 1 having a passage 2; and a transport system for transporting the substrate 3 through the passage 2 to a processing station or to a number of successively disposed processing stations. Such processing stations are, for example, soldering stations, dispensing stations and bonding stations where solder is applied to the substrate, solder is dispensed at the substrate at the dispensing station, and the semiconductor wafer is applied to the substrate at the bonding station. The soldering station and the dispensing station can be omitted when the back side of the semiconductor wafer or substrate has been coated with a corresponding substance which in turn results in a soldered connection. The channel 2 is defined by the base 4, the front side wall 5, the rear side wall 6, and the top 7. The top 7 is provided with a corresponding working opening at the processing station. The base 4 is provided with a plurality of first holes 8 through which the shielding gas supplied by the shielding gas source 9 can be conveyed during operation. The shielding gas that is often used is nitrogen, synthetic gas or other reactive gases. It is important that the shielding gas does not contain any oxygen. The density of the first holes 8 in the base 4 is generally different in different regions of the channel 2. The density of the first holes 8 and/or their diameter can be greater, in particular in the region of the treatment station, since a portion of the shielding gas escapes via the respective working opening. The front side wall 5 of the channel 2 comprises a longitudinal slit 11 which extends parallel to the direction of passage 10 . The longitudinal slit 11 is bounded by a bottom edge 12 and an upper edge 13, wherein the bottom edge 12 is flush with the base 4, or the bottom edge 12 is lowered relative to the base 4 as shown in FIG. The transport system includes at least one clip 15 having two jaws for transporting the substrate 3 through the channel 2. The clip 15 is mounted on a rail 16 (only partially shown) and can be moved back and forth, the rail 16 extending parallel to the longitudinal slit 11 of the channel 2. The at least one clip 15 transports the substrates 3 one by one to the processing station of the furnace 1. For the sake of clarity of the illustration, Figures 1 and 2 show only one substrate 3 and only one clip 15.

基部4較佳地由所謂的嵌件(inserts)17形成，這些嵌件17在與通道2的基部4相反的一側上形成有通道和凹陷，這些通道和凹陷將保護氣體引導到第一孔8。電加熱器被配置在基部4中，以便加熱爐1。 The base 4 is preferably formed by so-called inserts 17, which are formed with channels and recesses on the side opposite the base 4 of the channel 2, which channels and recesses direct shielding gas to the first aperture 8. An electric heater is disposed in the base 4 to heat the furnace 1.

在底邊緣12的與通道2面對的一側上有利地配置多個第二孔18，其中保護氣體也能夠被供給到第二孔18，以便因此形成氣浴(gas shower)。從第二孔18噴出的保護氣體靠著基板3的底側流動並且之後流到周圍環境中，因此形成氣簾，該氣簾防止周圍空氣的氧氣穿透到通道2中。 A plurality of second holes 18 are advantageously arranged on the side of the bottom edge 12 facing the channel 2, wherein a shielding gas can also be supplied to the second holes 18 in order to thereby form a gas shower. The shielding gas ejected from the second hole 18 flows against the bottom side of the substrate 3 and then flows into the surrounding environment, thus forming an air curtain which prevents oxygen of the surrounding air from penetrating into the passage 2.

保護氣體繞基板3的在縱向狹縫11處在通道2外突出的部分渦旋，並且保護氣體沿著爐的外側向上流動。保護氣體也在爐的縱向狹縫11的上邊緣13和基板3之間從爐逸出，並且與從下方升起的保護氣體一起形成第二氣簾。所述兩個氣簾防止周圍空氣的氧氣穿透到在通道2的內部中的熱基板3，並且因此防止基板3的表面的氧化。基板3的氧化大部分發生在基板3的從通道2突出的部分上。 The shielding gas vortexes around the portion of the substrate 3 that protrudes outside the channel 2 at the longitudinal slit 11, and the shielding gas flows upward along the outside of the furnace. The shielding gas also escapes from the furnace between the upper edge 13 of the longitudinal slit 11 of the furnace and the substrate 3, and together with the shielding gas rising from below forms a second air curtain. The two air curtains prevent oxygen from the surrounding air from penetrating into the thermal substrate 3 in the interior of the channel 2, and thus prevent oxidation of the surface of the substrate 3. Most of the oxidation of the substrate 3 occurs on the portion of the substrate 3 that protrudes from the channel 2.

氣簾也防止伯努利效應的發生：在沒有氣簾的情況下，由於伯努利效應，在通道2的內部中流動到入口開口23或出口開口25或流動到頂部7中的處理開口的保護氣體將在縱向狹縫11中產生負壓，並且將因此吸入周圍空氣。 The air curtain also prevents the Bernoulli effect from occurring: in the absence of an air curtain, due to the Bernoulli effect, the shielding gas flowing into the inlet opening 23 or the outlet opening 25 or the treatment opening flowing into the top 7 in the interior of the passage 2 A negative pressure will be generated in the longitudinal slit 11 and will thus draw in the surrounding air.

為了防止從縱向狹縫11吹出的保護氣體與周圍空氣的渦旋並且因此防止周圍空氣的氧氣的滲透，從第二孔18吹出的保護氣體應該作為恒定層流到達周圍環境。為了以優化方式支援該目標的實現，有利地附加執行下列措施a)或措施a)和b)兩者：a)縱向狹縫11的底邊緣12由窄條形成，該狹條相對於通道2的基部4被降低預定距離；b)在底邊緣12的窄條中形成溝槽14，並且第二孔18通入到基部4和/或溝槽14的側壁中。在圖2至4中示出該實施例。 In order to prevent the swirling of the shielding gas blown from the longitudinal slit 11 and the surrounding air and thus the penetration of oxygen of the surrounding air, the shielding gas blown out from the second hole 18 should flow as a constant laminar flow to the surrounding environment. In order to support the realization of this object in an optimized manner, it is advantageous to additionally perform the following measures a) or both measures a) and b): a) the bottom edge 12 of the longitudinal slit 11 is formed by a narrow strip relative to the channel 2 The base 4 is lowered by a predetermined distance; b) the groove 14 is formed in the narrow strip of the bottom edge 12, and the second hole 18 opens into the side wall of the base 4 and/or the groove 14. This embodiment is shown in Figures 2 to 4.

貫通式爐的通道2典型地被再分成至少兩個區域，即用於基板3的受控加熱的至少一個預熱區域、 至少一個處理區域和可選地用於基板3的受控冷卻的至少一個冷卻區域。單獨的加熱與每個區域關聯，使得在每個區域中溫度都能夠自由地編程。 The passage 2 of the through furnace is typically subdivided into at least two regions, namely at least one preheating zone for controlled heating of the substrate 3, At least one processing zone and optionally at least one cooling zone for controlled cooling of the substrate 3. Separate heating is associated with each zone so that the temperature can be freely programmed in each zone.

若干第一孔8和若干第二孔18與每個區域關聯。這意味著：每個區域的第一孔8彼此連接，並且每個區域的第二孔18彼此連接。將保護氣體供給到一個區域的相互連接的第一孔8和一個區域的相互連接的第二孔18較佳地經由不同的氣體線路20和能個別調節的流量控制閥21進行，使得能夠對於每個區域單獨地設定並且根據在通道2中以及在限制通道2的氣簾中兩者所需優化地設定保護氣體的供給。 A plurality of first holes 8 and a plurality of second holes 18 are associated with each of the regions. This means that the first holes 8 of each region are connected to each other, and the second holes 18 of each region are connected to each other. The interconnected first holes 8 for supplying shielding gas to one zone and the interconnected second holes 18 of one zone are preferably carried out via different gas lines 20 and individually adjustable flow control valves 21, enabling The zones are individually set and the supply of shielding gas is optimally set according to both in the channel 2 and in the air curtain of the restriction channel 2.

溝槽14能夠至少在從一個區域到下一個區域的個別過渡點處被分隔壁19中斷，因為對於保護氣體或保護氣體的流動性的要求能夠在各區域中不同。分隔壁19也提供在如下方面中的支援：在恒定層流通過縱向狹縫11到周圍環境的情況下，保護氣體流入到各個區域中到最高可能的程度。 The grooves 14 can be interrupted by the partition wall 19 at least at individual transition points from one region to the next because the requirements for the fluidity of the shielding gas or the shielding gas can be varied in each region. The partition wall 19 also provides support in the case where the constant laminar flow passes through the longitudinal slit 11 to the surrounding environment, the shielding gas flows into the respective regions to the highest possible extent.

第二孔18、溝槽14和/或底邊緣12的降低能夠在縱向狹縫11的整個長度上延伸，或者如圖1和2中所示，可以在通道2的入口開口23之後的短部22上和在通道2的出口開口25之前的短部24上省略。 The lowering of the second aperture 18, the groove 14 and/or the bottom edge 12 can extend over the entire length of the longitudinal slit 11, or as shown in Figures 1 and 2, can be short after the inlet opening 23 of the channel 2. The upper portion 22 is omitted from the short portion 24 before the outlet opening 25 of the passage 2.

在運輸期間，基板3從通道2突出到小程度，使得基板3能夠被夾子15夾持並被運輸。夾子15不突出到縱向狹縫11中。運輸設備較佳地設定成在向前運輸期間略微提起基板3，使得基板3不在通道2的基部4 上滑動。在縱向狹縫11的上邊緣13和通道2的基部4之間的距離因此被定尺寸到足夠大的程度。 During transportation, the substrate 3 protrudes from the channel 2 to a small extent so that the substrate 3 can be clamped by the clip 15 and transported. The clip 15 does not protrude into the longitudinal slit 11. The transport device is preferably arranged to slightly lift the substrate 3 during forward transport such that the substrate 3 is not at the base 4 of the channel 2 Swipe up. The distance between the upper edge 13 of the longitudinal slit 11 and the base 4 of the channel 2 is thus dimensioned to a sufficient extent.

本發明允許構建貫通式爐，在貫通式爐中加熱區域和/或冷卻區域被再分成若干區域，在所述若干區域中普遍存在不同的溫度，並且具有能自由編程的夾子的運輸系統允許根據預定溫度和時間表將基板運輸通過貫通式爐。根據本發明的用於“晶粒”的自動安裝機包含根據本發明的貫通式爐並且較佳地被編程用於輸入參數，該自動安裝機在該領域中被稱為晶粒接合器或者也被稱為軟焊晶粒接合器，該自動安裝機被設定用於將晶粒例如半導體晶片焊接到基板上並用於根據這些參數將基板運輸通過貫通式爐，所述參數為每個區域確定溫度並確定運輸速度和/或停留時間。參數的輸入在設定期間即在常規安裝操作之前進行。 The invention allows the construction of a through furnace in which the heating zone and/or the cooling zone are subdivided into zones in which different temperatures are ubiquitous and the transport system with freely programmable clips allows The substrate is transported through the through furnace at a predetermined temperature and schedule. An automatic mounting machine for "grains" according to the invention comprises a through furnace according to the invention and is preferably programmed for input parameters, which is known in the art as a die bonder or also Known as a solder die bonder, the automounter is configured to solder a die, such as a semiconductor wafer, onto a substrate and to transport the substrate through a through furnace according to these parameters, the parameters determining the temperature for each zone And determine the transport speed and / or residence time. The input of the parameters is performed during the set-up period before the normal installation operation.

貫通式爐以及晶粒接合器也能夠被用於使基板與除了在上述實施例中提及的半導體晶片之外的部件或晶粒配合。 The through furnace and the die bonder can also be used to mate the substrate with components or dies other than the semiconductor wafers mentioned in the above embodiments.

雖然本發明的實施例和應用已經被示出和描述，但是對於受益於本揭露的本領域技術人員將顯而易見的是：在不偏離這裏的發明概念的情況下，與上述不同的更多變化例是可行的。因此，除了在隨附的申請專利範圍的精神及它們的均等物中之外，本發明不被限制。 Although the embodiments and applications of the present invention have been shown and described, it will be apparent to those skilled in the art <Desc/Clms Page number It works. Therefore, the invention is not limited except in the spirit of the appended claims and their equivalents.

Claims (7)

一種用於基板(3)的貫通式爐，包括爐(1)和運輸系統，所述爐(1)具有通道(2)，所述運輸系統用於將所述基板(3)運輸通過所述通道(2)，其中所述通道(2)由基部(4)、前側壁(5)、後側壁(6)和頂部(7)界定，所述基部(4)包含多個第一孔(8)，所述多個第一孔(8)能夠連接到保護氣體源(9)，以便在操作期間供給保護氣體，所述通道(2)的所述前側壁(5)包括縱向狹縫(11)，所述縱向狹縫(11)平行於通過方向(10)延伸，並且所述縱向狹縫(11)由底邊緣(12)和上邊緣(13)界定，所述運輸系統包括至少一個夾子(15)，所述至少一個夾子(15)用於將所述基板(3)運輸通過所述通道(2)，並且所述夾子能夠沿著所述通道(2)的所述縱向狹縫(11)來回移動。 A through furnace for a substrate (3) comprising a furnace (1) and a transport system, the furnace (1) having a passage (2) for transporting the substrate (3) through the Channel (2), wherein the channel (2) is defined by a base (4), a front side wall (5), a rear side wall (6) and a top portion (7), the base portion (4) comprising a plurality of first holes (8) The plurality of first holes (8) are connectable to a shielding gas source (9) for supplying a shielding gas during operation, the front side wall (5) of the channel (2) comprising a longitudinal slit (11) The longitudinal slit (11) extends parallel to the direction of passage (10), and the longitudinal slit (11) is defined by a bottom edge (12) and an upper edge (13), the transport system comprising at least one clip (15) said at least one clip (15) for transporting said substrate (3) through said channel (2), and said clip being capable of following said longitudinal slit of said channel (2) 11) Move back and forth. 如請求項1所述的貫通式爐，其中在所述縱向狹縫(11)的所述底邊緣(12)的與所述通道(2)面對的一側上配置多個第二孔(18)，所述多個第二孔(18)能夠連接到所述保護氣體源(9)。 A through-type furnace according to claim 1, wherein a plurality of second holes are disposed on a side of the bottom edge (12) of the longitudinal slit (11) facing the passage (2) ( 18) The plurality of second holes (18) are connectable to the shielding gas source (9). 如請求項1或2所述的貫通式爐，其中所述縱向狹縫(11)的所述底邊緣(12)由窄條形成，所述窄條相對於所述通道(2)的所述基部(4)被降低預定距離。 The through furnace according to claim 1 or 2, wherein the bottom edge (12) of the longitudinal slit (11) is formed by a narrow strip, the strip being opposite to the passage (2) The base (4) is lowered by a predetermined distance. 如請求項3所述的貫通式爐，其中在所述縱向狹縫(11)的所述底邊緣(12)的所述窄條中形成溝槽(14)，並且所述第二孔(18)通入到所述溝槽(14)中。 A through-type furnace according to claim 3, wherein a groove (14) is formed in the narrow strip of the bottom edge (12) of the longitudinal slit (11), and the second hole (18) ) into the trench (14). 如請求項4所述的貫通式爐，其中所述通道(2)被再分成至少兩個區域，並且所述溝槽(14)至少在從一個區域到下一個區域的一個過渡點處被分隔壁(19)中斷。 A through-type furnace according to claim 4, wherein said passage (2) is subdivided into at least two regions, and said groove (14) is divided at least at a transition point from one region to the next region The next door (19) is interrupted. 如請求項1至5中的任一項所述的貫通式爐，其中所述通道(2)被再分成至少兩個區域，至少一個區域與若干所述第二孔(18)關聯，並且同一區域的所述第二孔(18)彼此連接並且能夠經由單獨的流量控制閥(21)連接到所述保護氣體源(9)。 The through furnace according to any one of claims 1 to 5, wherein the passage (2) is subdivided into at least two regions, at least one region associated with a plurality of the second holes (18), and the same The second holes (18) of the zone are connected to each other and can be connected to the shielding gas source (9) via a separate flow control valve (21). 一種晶粒接合器，具有如請求項1至6中的任一項所述的貫通式爐，其中所述貫通式爐包括加熱區域和冷卻區域，所述加熱區域和所述冷卻區域被再分成若干區域，並且所述晶粒接合器被編程用於輸入參數並用於根據這些參數將所述基板運輸通過所述貫通式爐，所述參數為每個區域確定溫度並確定運輸速度和/或停留時間。 A through-type furnace according to any one of claims 1 to 6, wherein the through-type furnace includes a heating zone and a cooling zone, the heating zone and the cooling zone being subdivided a plurality of zones, and the die bonder is programmed for input parameters and for transporting the substrate through the through-furnace according to the parameters, the parameters determining temperature for each zone and determining transport speed and/or staying time.
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