TWI634587B - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus is provided. The substrate processing apparatus includes a chamber configured to provide a substrate processing space, a processing gas supply line configured to supply a processing gas into the chamber, and a first diffusion plate having an injection hole in an edge portion to process The gas is injected through the injection hole; a substrate support member is disposed to face the first diffusion plate and is configured to support the substrate; a second diffusion plate is disposed between the first diffusion plate and the substrate support and has a plurality of Distribution holes; and a plasma generating unit configured to generate a plasma in a space between the first diffusion plate and the second diffusion plate.

Description

Substrate processing device

The present disclosure relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of improving uniformity in substrate processing.

The substrate processing apparatus may be an apparatus for performing substrate processing such as etching or deposition by using a physical or chemical reaction such as a plasma phenomenon in a vacuum state. Generally, in a substrate processing process using a substrate processing apparatus, a reaction gas may be injected through a shower head installed in a chamber to perform substrate processing. In addition, the injected reaction gas can generate a plasma in the chamber by applying electric power. Therefore, a substrate process such as a process in which the surface of the substrate is etched by a material having a plasma state (such as a radical) formed in the chamber, or a material having a plasma state (such as a radical) can be performed according to the purpose of the substrate And deposited on the surface of the substrate.

However, in the substrate processing apparatus according to the prior art, when a plasma is generated to perform substrate processing, the substrate and circuit elements formed on the substrate may be damaged by arc generation, ion collision, ion implantation, and the like, As a result, processing defects are caused.

Furthermore, in the substrate processing apparatus according to the prior art, it is difficult to use a shower head that distributes only the reaction gas due to the uniform movement and distribution of the reaction gas plasma. Therefore, the plasma may not be evenly distributed on the entire surface of the substrate, but may be concentrated at one point. Therefore, the film deposited on the substrate or the etched film may have a non-uniform thickness.

(Patent Document 1) Korean Patent Registration No. 10-0880767

The present invention provides a substrate processing apparatus in which a plasma is uniformly distributed on an entrance surface of a substrate to improve uniformity of the substrate processing.

According to an exemplary embodiment, a substrate processing apparatus includes: a chamber configured to provide a substrate processing space; a processing gas supply line configured to supply a processing gas into the chamber; and a first diffusion plate, which An injection hole is provided in an edge portion thereof, and the processing gas is injected through the injection hole; a substrate support member is disposed to face the first diffusion plate and configured to support the substrate; and a second diffusion plate, which is disposed There are a plurality of distribution holes between the first diffusion plate and the substrate support; and a plasma generating unit configured to space between the first diffusion plate and the second diffusion plate Generates plasma.

The substrate processing apparatus may further include a side wall member connected to an edge of the second diffusion plate and having a plurality of air inlet holes.

The second diffusion plate may have an effective area density of the distribution holes, and the distribution holes are different from each other according to a position of the distribution holes.

The effective area density of the distribution holes in a central portion of the second diffusion plate may be greater than the effective area density of the distribution holes in an edge portion of the second diffusion plate.

The substrate processing apparatus may further include an insertion body inserted into each of the distribution holes to adjust an opening area of the second diffusion plate.

The insertion body may have a through hole passing through a center portion of the insertion body.

The second diffusion plate has a multi-stage structure including a plurality of stages, and the distribution holes in the stages adjacent to each other may be different from each other in position.

The substrate processing apparatus may further include a position adjustment unit configured to adjust a distance between the first diffusion plate and the second diffusion plate.

The substrate processing apparatus may further include a plurality of exhaust ports, which are arranged symmetrically to each other along the periphery of the substrate support at a position adjacent to the inner wall of the chamber and have multiple stages structure.

The substrate processing apparatus may further include a blocking ring extending from an edge portion of the substrate support along a periphery of the substrate support.

10‧‧‧ substrate

110‧‧‧ chamber

120‧‧‧Processing gas supply line

130‧‧‧first diffuser

131‧‧‧Injection hole / Drain hole

140‧‧‧ substrate support

150‧‧‧Second diffuser

151, 151a, 151b‧‧‧ Distribution holes

160‧‧‧plasma generation unit

161‧‧‧antenna

162‧‧‧Discharge pipeline

163‧‧‧Power

164‧‧‧ Plasma

170‧‧‧ sidewall members

171‧‧‧Air inlet

180‧‧‧ exhaust port

181‧‧‧Exhaust port plate

181a‧‧‧Upper exhaust panel

181b‧‧‧short length

181c‧‧‧length

190‧‧‧block ring

210‧‧‧Exhaust unit

220, 220a, 220b ‧‧‧ Inserted into the main body

221‧‧‧through hole

An exemplary embodiment can be understood in more detail from the following description taken in conjunction with the accompanying drawings, wherein: FIG. 1 is a cross-sectional view of a substrate processing apparatus according to an exemplary embodiment.

FIG. 2 is a plan view of a second diffusion plate according to an exemplary embodiment.

FIG. 3 is a perspective view of a sidewall member according to an exemplary embodiment.

FIG. 4 is a coupling perspective view of a second diffusion plate and a side wall member according to an exemplary embodiment.

FIG. 5 is a plan view of a second diffusion plate having a large distribution hole according to an exemplary embodiment.

FIG. 6 is a plan view of a second diffusion plate having small distribution holes according to an exemplary embodiment.

7 is a plan view of a second diffusion plate having a large distribution hole in a center portion and a small distribution hole in an edge portion according to an exemplary embodiment.

FIG. 8 is a view of an insertion body inserted into a distribution hole of a second diffusion plate according to an exemplary embodiment.

9 is a cross-sectional view of a second diffusion plate having a multi-stage structure including a plurality of stages, in which a plurality of distribution holes of the plurality of stages are different from each other in position according to an exemplary embodiment.

10 is a cross-sectional view of a second diffuser plate having a multi-stage structure including a plurality of stages in which a plurality of distribution holes of the plurality of stages are different from each other in position and size according to an exemplary embodiment.

Hereinafter, specific embodiments will be described in more detail with reference to the accompanying drawings. The invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this invention will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the description, the same elements are designated by the same reference numerals. In the drawings, the sizes of layers and regions are exaggerated for clarity of illustration. Similar reference numbers refer to similar elements throughout.

FIG. 1 is a cross-sectional view of a substrate processing apparatus according to an exemplary embodiment.

1, a substrate processing apparatus according to an exemplary embodiment includes: a chamber 110 configured to provide a substrate processing space; and a processing gas supply line 120, which The processing gas is supplied into the chamber 110; the first diffusion plate 130 has an injection hole 131 in an edge portion through which the processing gas is injected; and the substrate support 140 is disposed facing the first diffusion plate 130 to A supporting substrate 10; a second diffusion plate 150 disposed between the first diffusion plate 130 and the substrate support 140 and having a plurality of distribution holes 151; and a plasma generating unit 160 between the first diffusion plate 130 and the second A plasma 164 is generated in a space between the diffusion plates 150.

The chamber 110 provides a space in which substrate processing is performed. The inside of the chamber may be in a vacuum state, and a plasma may be generated in the chamber to efficiently perform substrate processing. The chamber 110 may include an exhaust unit 210 for exhausting gas. For example, the exhaust unit 210 may be disposed in a lower portion of the chamber 110. Also, the chamber 110 may be formed of various materials such as metal, ceramic, glass, polymer, and compound. The cavity 110 may have a right-angled shape, an arched shape, a cylindrical shape, and the like.

The processing gas supply line 120 supplies a processing gas from a processing gas supply source (not shown) to the chamber 110. The process gas may include an etching gas and a source gas for depositing a thin film. Here, the processing gas supply line 120 may supply an etching gas when an etching process is performed, and a source gas for depositing a thin film when performing a thin film deposition process. That is, the processing gas supply line 120 may supply a processing gas suitable for a substrate processing purpose. The etching gas may include a natural oxide etching gas such as nitrogen trifluoride (NF ₃ ) and ammonia. The source gas used to deposit the thin film may include a silicon deposition gas, such as monosilane (SiH ₄ ) and phosphine (PH ₃ ). The gas may be appropriately selected according to the kind of the thin film to be deposited. In addition, an inert gas such as hydrogen (H ₂ ), nitrogen (N ₂ ), and argon (Ar) may be supplied as the processing gas together with an etching gas or a source gas for depositing a thin film.

The first diffusion plate 130 distributes a processing gas. Injection of process gas The access hole 131 may be defined in an edge portion of the first diffusion plate 130. Since the processing gas is distributed and injected through the first diffusion plate 130, the processing gas can reach the substrate 10 uniformly. To uniformly distribute the processing gas, the processing gas supply line 120 may be disposed in a central portion of the chamber 110. In this case, when the injection hole 131 is defined in the center portion, a relatively large amount of processing gas may be injected from the center portion communicating with the processing gas supply line 120 when compared with other portions. Therefore, the amount of the processing gas reaching the substrate 10 may be uneven depending on the position, and further, the substrate processing via the processing gas may be performed unevenly depending on the position. However, similar to the exemplary embodiment, when the injection holes 131 are defined in the edge portion, the processing gas may be uniformly distributed and injected by bypassing without communicating with the processing gas supply line 120, thereby allowing the processing gas Reach the substrate 10 uniformly. The precise position, injection direction, and number of the injection holes 131 can be appropriately determined so that the processing gas flows uniformly in the chamber 110.

The substrate support 140 may be disposed facing the first diffusion plate 130 to support the substrate 10. The substrate support 140 may be disposed in an inner lower portion of the chamber to support the substrate 10. In addition, the substrate support 140 may include a rechargeable electrostatic chuck, so that the substrate 10 is supported by the substrate support 140 and the substrate is maintained in an electrostatic state.

The second diffusion plate 150 may be disposed between the first diffusion plate 130 and the substrate support 140 and has a plurality of distribution holes 151. The uniform flow of the process gas in the chamber 110 may be achieved by using only the first diffusion plate 130. If only the first diffusion plate 130 is used, the flow of the processing gas (or plasma) can be attributed to the distance between the first diffusion plate 130 and the substrate 10 being concentrated in the exhaust direction by the exhaust unit 210. Therefore, uneven distribution of the processing gas (or plasma) on the substrate 10 may occur. However, if the second diffusion plate 150 and the first diffusion plate 130 are used together, the process gas (or electricity) can be controlled. (Plasma) to achieve a uniform distribution of the processing gas (or plasma) on the substrate 10.

In addition, the second diffusion plate 150 may be grounded, or a voltage may be applied to the second diffusion plate 150 to filter charged ions and electrons in the plasma. That is, when the plasma passes through the second diffusion plate 150, ions and electrons may be blocked, so that only neutral reactive species react on the substrate 10. The second diffusion plate 150 may be configured such that the plasma collides with the second diffusion plate 150 at least once to reach the substrate 10. In addition, when the plasma collides with the ground (or a voltage having a different polarity is applied to) the second diffusion plate 150, ions and electrons having large energy can be absorbed into the second diffusion plate 150. Therefore, harmful effects of the charged ions and electrons on the substrate 10 and the periphery of the substrate 10 can be minimized. In addition, since only the neutral reactive species reacts with the substrate 10 or the thin film on the substrate 10, although the substrate processing apparatus is used for a long time, the surrounding members in the chamber 110 can be used to prevent the surface of the substrate 10 from being damaged. The second diffusion plate 150 can also block the light from the plasma. Therefore, the light of the plasma may collide with the second diffusion plate 150, and thus may not be transmitted through the second diffusion plate 150. In addition, the second diffusion plate 150 may be grounded through contact with the chamber 110 without providing a secondary electrode.

When the plasma is generated, the substrate 10 is not directly exposed to the plasma through the second diffusion plate 150. Therefore, it is possible to prevent the substrate 10 and the circuit elements formed on the substrate 10 from being damaged by arc generation, ion collision, and ion implantation in the chamber 110. Therefore, processing defects of the substrate 10 and circuit elements formed on the substrate 10 according to a substrate processing process can be minimized.

The plasma generating unit 160 may generate a plasma 164 in a space between the first diffusion plate 130 and the second diffusion plate 150. The plasma generating unit 160 may excite a process gas to generate a plasma 164. Therefore, the plasma generating unit 160 may include a discharge tube 162 and an antenna disposed to surround the discharge tube 162 161 (or inductively coupled coil). The discharge line 162 may be formed of sapphire, quartz, or ceramic, and has a predetermined arched (or box) shape. The discharge line 162 may be disposed in an inner upper portion of the chamber 110. The exhaust line 162 may have an upper portion connected to the process gas supply line 120 and a plasma generating space (ie, a space between the first diffusion plate 130 and the second diffusion plate 150) that is defined with the second diffusion plate 150. The lower part. Here, the processing gas may be distributed into a space between the upper portion of the exhaust pipe 162 and the first diffusion plate 130, and then injected through the injection hole 131 of the first diffusion plate 130. The antenna 161 may be positioned to surround a discharge line 162 in the chamber 110. In addition, the antenna 161 can receive power from the power source 163 to excite the processing gas in the exhaust pipe 162, thereby generating the plasma 164. Alternatively, after an electrode is provided in the internal space of the chamber 110, power may be applied to the provided electrode to generate a plasma.

In the substrate processing apparatus according to the exemplary embodiment, the processing gas may bypass the processing gas supply line 120 disposed at the center portion of the chamber 110 via the first diffusion plate 130 and then be uniformly injected through the discharge hole 131. In addition, the processing gas can be widely distributed in a space between the first diffusion plate 130 and the second diffusion plate 150. In addition, only the neutral reactive species may be uniformly introduced on the substrate 10 through the distribution holes 151 of the second diffusion plate 150. Therefore, the substrate processing apparatus according to the exemplary embodiment may perform uniform substrate processing on the entire surface of the substrate 10. Each of the first diffusion plate 130 and the second diffusion plate 150 may affect the flow of a gas (eg, a process gas, a plasma, and a neutral reactive species) to allow the neutral reactive species to be uniformly dispersed on the substrate 10.

FIG. 2 is a plan view of a second diffusion plate according to an exemplary embodiment, FIG. 3 is a perspective view of a sidewall member according to an exemplary embodiment, and FIG. 4 is a coupling of the second diffusion plate and the sidewall member according to an exemplary embodiment. Then perspective.

2 to 4, the substrate processing apparatus according to the exemplary embodiment may further include a side wall member 170 connected to an edge of the second diffusion plate 150 and having a plurality of gas induction holes 171. The side wall member 170 may be coupled to the second diffusion plate 150 and provide a space for neutral reactive species passing through the second diffusion plate 150 to react on the substrate 10. If the side wall member 170 is not provided, the neutral reactive species may be insufficiently reacted due to the exhaust from the exhaust unit 210 and then exhausted. However, if the sidewall member 170 is provided, the flow of the neutral reactive species may be controlled to allow the neutral reactive species to fully react on the substrate 10. A plurality of air intake holes 171 are defined in the side wall member 170. Therefore, the flow of gas due to the suction (or pumping) of the exhaust unit 210 can be adjusted according to the size, position, and number of the gas inlet holes 171. Therefore, the flow of neutral reactive species can be controlled. Therefore, the flow of gas in the plasma generation space can also be controlled. In addition, a by-product of a process (for example, etching or deposition) in a gaseous state may be exhausted to the air inlet 171 by suction (or pumping) of the exhaust unit 210. The moving speed and exhaust speed of the neutral reaction species can be adjusted according to the size, position, and number of the air inlet holes 171. The neutral reactive species may pass through the distribution holes 151 of the second diffusion plate 150 to react on the substrate 10. Therefore, the flow of the neutral reactive species reaching the substrate 10 through the air inlet 171 of the side wall member 170 can be controlled. Therefore, the moving speed of the neutral reactive species can be adjusted, and the neutral reactive species can be held on the substrate 10 to provide a time required for a sufficient reaction on the substrate 10. The second diffusion plate 150 and the side wall member 170 may be integrated with each other.

FIG. 5 is a plan view of a second diffusion plate with large distribution holes according to an exemplary embodiment, FIG. 6 is a plan view of a second diffusion plate with small distribution holes according to an exemplary embodiment, and FIG. 7 is an exemplary implementation according to an exemplary embodiment An example is a plan view of a second diffusion plate having a large distribution hole in the center portion and a small distribution hole in the edge portion. Figure 5 To FIG. 7 illustrate a modified example of the second diffusion plate according to the exemplary embodiment.

5 to 7, the second diffusion plate 150 may have an effective area density of the distribution holes 151, which are different from each other according to positions. Here, the effective area density may be a total area of the distribution holes 151 per unit area, that is, an opening area per unit area of the second diffusion plate 150 (ie, an area opened by the distribution holes). As illustrated in FIG. 5, the large distribution holes 151 a may be generally defined in the second diffusion plate 150. If the distribution holes 151 are too large, the flow of the neutral reactive species may be concentrated in the exhaust direction by the exhaust unit 210 to cause uneven distribution of the neutral reactive species on the substrate 10. As illustrated in FIG. 6, the small distribution holes 151 b may be generally defined in the second diffusion plate 150. If the distribution hole 151b is too small, the moving speed of the neutral reaction species may be slow and increase the processing time. In addition, when the distribution holes 151 having the same size are generally defined in the second diffusion plate 150, the positions of the injection holes 131 due to the first diffusion plate 130 are defined in the edges and the exhaust unit 210 provided in the edges In the exhaust direction, a larger amount of the neutral reactive species may be supplied to the edge portion of the substrate than the central portion of the substrate 10 to cause uneven distribution of the neutral reactive species. However, the distribution holes 151 may have different sizes or densities from each other depending on the position to allow the neutral reactive species to be uniformly distributed. Therefore, the second diffusion plate 150 may have distribution holes 151 that are different in size or density depending on the position, and thus have an effective area density of the distribution holes 151 that are different from each other depending on the position. For example, the size of each distribution hole 151 defined in the center portion of the second diffusion plate 150 may be larger than the size of each distribution hole 151 defined in the edge portion, or the distribution holes 151 may be determined according to the distance from the second diffusion plate. The distance of the center of 150 has a size that gradually increases or decreases.

In the second diffusion plate 150, the distribution holes 151 are effective at the center portion The area density may be greater than the effective area density of the edge portion. For example, as illustrated in FIG. 7, the size of the distribution holes 151a in the center portion may be larger than the size of the distribution holes 151b in the edge portion, so that the effective area density of the distribution holes 151a in the center portion is greater than the distribution holes 151b in the edge portion Effective area density. In this case, the neutral reactive species introduced into the center portion of the second diffusion plate 150 may be increased to allow the neutral reactive species to be uniformly distributed on the substrate 10. Generally speaking, since the injection hole 131 of the first diffusion plate 130 is defined in the edge portion, and the exhaust direction of the exhaust unit 210 is directed in the direction of the edge portion, the flow of the gas can be concentrated in the edge portion . Therefore, since the amount of the neutral reactive species reaching the substrate 10 is small at the center portion of the second diffusion plate 150, the reaction at the center portion of the substrate 10 may not occur well. For this reason, when the effective area density of the distribution holes 151a defined in the center portion of the second diffusion plate 150 is greater than the effective area density of the distribution holes 151b defined in the edge portion of the second diffusion plate 150, it is introduced to the first The inflow amount of the neutral reactive species in the center portion of the two diffusion plate 150 may increase. Therefore, the neutral reactive species can be uniformly distributed on the substrate 10.

FIG. 8 is a view of an insertion body inserted into a distribution hole of a second diffusion plate according to an exemplary embodiment.

Referring to FIG. 8, the substrate processing apparatus may further include an insertion body 220 inserted into the distribution hole 151 to adjust an opening area of the second diffusion plate 150. The insertion body 220 may have a plug shape. The insertion body 220 may be inserted into the distribution hole 151 to block the distribution hole 151. In this case, the arrangement structure of the distribution holes 151 may not be changed without manufacturing the second diffusion plate 150 again. That is, the arrangement structure of the distribution holes 151 can be easily changed by inserting only the insertion body 220a. In addition, the distribution holes 151 may have an effective area density of the distribution holes 151, and the distribution holes are different from each other according to a position. therefore, By simply inserting the insertion body 220a, the flow of the neutral reactive species can be easily adjusted.

The insertion body 220b may include a through hole 221 passing through a center portion of the insertion body. When the insertion body 220b having the through hole 221 is inserted into the distribution hole 151, the size of the distribution hole 151 can be adjusted to adjust the fine flow of the neutral reaction species. Therefore, fine differences according to the conditions of the chamber 110 and process conditions such as the pumping speed can be adjusted by inserting the insertion body 220b. Therefore, the neutral reactive species can be more uniformly distributed on the substrate 10. The through hole 221 may have various sizes. Therefore, through the through holes 221 having various sizes, the flow of the neutral reactive species can be more finely adjusted.

The blocked insertion body 220a and the insertion body 220b having the through hole 221 may be used with each other. In this situation, the flow of neutral reactive species can be adjusted more accurately.

FIG. 9 is a cross-sectional view of a second diffuser plate having a multi-stage structure including a plurality of stages according to an exemplary embodiment, in which distribution holes of the stages are different from each other in position, and FIG. 10 is a cross-sectional view of an exemplary embodiment. Sectional view of a second diffuser plate having a multi-stage structure including a plurality of stages, wherein the distribution holes of the stages are different from each other in position and size. 9 to 10 illustrate conceptual views for explaining a multi-stage structure of a second diffusion plate according to an exemplary embodiment.

Referring to FIGS. 9 and 10, the second diffusion plate 150 may have a plurality of multi-stage structures. Here, the distribution holes 151 in the stages adjacent to each other may be different from each other in position. The distribution holes 151 defined in stages adjacent to each other are different from each other in position as illustrated in FIG. 9, and may be different from each other in position and size as illustrated in FIG. 10, or may be different from each other in size but may be defined At the same location. In this case, the neutral reactive species may be controlled to flow to the plurality of second diffusion plates 150. The amount of the neutral reactive species reaching the substrate 10 and the moving (or introducing) speed can be adjusted according to the position of the substrate 10. When the distance between the second diffusion plate 150 and the substrate 10 is short, the introduction rate of the neutral reactive species may be fast, and the reaction time of the neutral reactive species on the substrate 10 may be shortened. Therefore, at the position where the distribution holes 151 are defined and where the distribution holes 151 are not defined, a difference in uniformity of substrate processing may occur. Therefore, when the second diffusion plate 150 has a plurality of multi-stage structures, although the distance between the second diffusion plate 150 and the substrate 10 is short, due to the bottleneck phenomenon of the flow of the neutral reactive species, the neutral reactive species The introduction speed may be reduced to allow uniform distribution of the neutral reactive species on the substrate 10.

The substrate processing apparatus according to the exemplary embodiment may further include a position adjustment unit (not shown) for adjusting a distance between the first diffusion plate 130 and the second diffusion plate 150. The position adjustment unit can adjust the position of the second diffusion plate 150 to adjust the distance between the first diffusion plate 130 and the second diffusion plate 150. When the distance between the first diffusion plate 130 and the second diffusion plate 150 is adjusted, the plasma generation space can be adjusted to provide sufficient space for the processing gas to be widely distributed. Also, when the processing gas can be uniformly distributed in a space between the first diffusion plate 130 and the second diffusion plate 150 at a predetermined distance between the diffusion plate 130 and the second diffusion plate 150, the plasma 164 may be generated. In addition, the second diffusion plate 150 can be adjusted in position to adjust the distance between the substrate 10 and the second diffusion plate 150. Here, the distance between the first diffusion plate 130 and the second diffusion plate 150 can also be adjusted according to the position of the second diffusion plate 150. If the distance between the substrate 10 and the second diffusion plate 150 is short, substrate processing such as etching can be performed more uniformly, and thus the substrate processing rate (for example, the etching rate) can be increased more. In addition, in the etching process, the selectivity (for example, the etching ratio of the natural oxide layer and the nitride layer) can be increased more. If the distance between the substrate 10 and the second diffusion plate 150 is about 50 mm or less and the diameter of the distribution hole 151 is 10 mm or 10 mm Above, when a thin film is deposited on the surface of the substrate 10 after the surface of the substrate 10 is etched, the occurrence of the film color phenomenon can be attributed to the arrangement of the second diffusion plate 150 and the distribution holes 151. However, if the distance between the substrate 10 and the second diffusion plate 150 is about 50 mm or less, the diameter of the distribution holes 151 may be 10 mm or less to solve the above limitation. Here, the second diffusion plate 150 may have a multi-stage structure to allow a bottleneck phenomenon to occur in the flow of the neutral reactive species, thereby achieving more uniform substrate processing such as etching and deposition. When the surface of the substrate 10 is uneven, the film color can be seen, or the deposited thin film has an uneven thickness due to uneven etching. When the diameter of the distribution holes 151 is 10 mm or less, the flow of the neutral reactive species may be uniform to prevent the film color phenomenon from occurring.

The substrate processing apparatus according to the exemplary embodiment may further include a plurality of exhaust ports 180 having a multi-stage structure. The exhaust ports 180 are adjacent to the inner wall of the chamber 110. The positions are arranged symmetrically to each other along the periphery of the substrate support 140. The exhaust port 180 may have a multi-stage structure. That is, the exhaust port plates 181 including the plurality of exhaust ports 180 may be disposed in a multi-stage form such that the exhaust ports 180 are disposed symmetrically to each other along the periphery of the substrate support 140. The size and shape of the exhaust port 180 in each stage can be changed to adjust the gas flow and allow the neutral reactive species to be evenly distributed on the substrate 10. The degree of vacuum in the chamber 110 may be maintained by the exhaust port 180, and the flow of the neutral reactive species may be uniform over the entire surface of the substrate 10. In addition, process by-products can be exhausted from the exhaust port 180. The exhaust port plate 181 may be provided as an annular plate. The exhaust port plate 181 may include a side wall bent from the annular plate. The sidewall may have a short length 181b and a long length 181c. The side walls can induce exhaust flow. Here, the side wall can prevent the exhaust gas from leaking into the exhaust port 180 from leaking to another place and also induce the exhaust flow, so that the exhaust gas is exhausted to the exhaust well. Unit 210. The uppermost exhaust port plate 181 a may be connected to the side wall member 170. The uppermost exhaust port plate 181a and the side wall member 170 may be connected to each other to prevent exhaust gas exhausted into the intake hole 171 from leaking to another place to allow exhaust gas to be exhausted well into the exhaust port 180.

The base substrate processing apparatus according to the exemplary embodiment may further include a blocking ring 190 extending from an edge portion of the substrate support 140 along a periphery of the substrate support 140. The blocking ring 190 may guide the substrate 10 so that the substrate 10 is stably supported by the substrate support 140 when the substrate 10 is moved. In addition, the blocking ring 190 can reduce the gap between the substrate support 140 and the side wall member 170 so that the neutral reactive species is discharged due to the exhaust of the exhaust unit 210 and does not react on the substrate 10 The phenomenon of gas is minimized. That is, the blocking ring 190 may control the flow of the neutral reactive species so that the neutral reactive species passes through the distribution holes 151 of the second diffusion plate 150 to react on the substrate 10, and then exhausts to exhaust through the air inlet 171 Mouth 180. In addition, the blocking ring 190 can serve as a side wall of the exhaust port plate 181 to minimize the leakage of exhaust gas to the exhaust port 180 to another place and induce an exhaust flow, so that the exhaust gas is well exhausted to the exhaust gas. Unit 210. That is, the barrier ring 190 may induce an exhaust path including exhaust gas that is a by-product of the process generated by etching and deposition, so that the exhaust gas passes through the air inlet hole 171 of the side wall member 170 and is then exhausted to the exhaust through the exhaust port 180气 单元 210。 In the gas unit 210.

In the substrate processing apparatus according to an exemplary embodiment, each of the first diffusion plate 130 and the second diffusion plate 150 may affect the flow of a gas (for example, a processing gas, a plasma, and a neutral reactive species) to allow neutralization. Sexually reactive species are evenly distributed on the substrate 10. Moreover, the substrate processing can be performed more accurately through the side wall member 170 and the exhaust port 180. As described above, the substrate processing apparatus according to the exemplary embodiment may perform uniform substrate processing such as etching and deposition on the entire surface of the substrate 10 by adjusting the flow of a gas through various components. In addition, components can be structurally changed to Perform more uniform substrate processing.

As described above, in the substrate processing apparatus according to the exemplary embodiment, the first diffusion plate for distributing the processing gas and the second diffusion plate for distributing the plasma may be used to achieve uniform distribution of the plasma. Therefore, substrate processing such as etching and deposition can be performed uniformly on the entire surface of the substrate. When a plasma is generated, the substrate is not directly exposed to the plasma through the second diffusion plate. Therefore, the substrate and the circuit elements formed on the substrate can be prevented from being damaged by arc generation, ion collision, and ion implantation in the chamber. Therefore, processing defects of the substrate and circuit elements formed on the substrate can be minimized. In addition, the second diffusion plate can be grounded to filter the charged ions and electrons in the plasma. Therefore, since only neutral reactive species are introduced onto the substrate, harmful effects of the charged ions and electrons on the substrate and the periphery of the substrate can be minimized. In addition, it is possible to prevent the substrate and the periphery of the substrate from being damaged by the plasma. In addition, the effective area density of the distribution holes can be easily adjusted by using an insertion body inserted into the distribution holes of the second diffusion plate. Therefore, despite changing process conditions, neutral reactive species can be evenly distributed. Also, the second diffuser plate may have a multi-stage structure to control the flow of the neutral reactive species. In addition, the size and shape of the exhaust ports in each stage can be changed to adjust the gas flow and allow the neutral reactive species to be evenly distributed on the substrate. The degree of vacuum in the chamber can be maintained by the exhaust port, and the flow of the neutral reactive species can be uniform over the entire surface of the substrate. In addition, process by-products can be vented through the exhaust port.

In the substrate processing apparatus according to the exemplary embodiment, a first diffusion plate for distributing a processing gas and a second diffusion plate for distributing a plasma may be used to achieve uniform distribution of the plasma. Therefore, substrate processing such as etching and deposition can be performed uniformly over the entire surface of the substrate.

In addition, when the plasma is generated, the substrate will not be directly exposed via the second diffusion plate. Exposed to the plasma. Therefore, the substrate and the circuit elements formed on the substrate can be prevented from being damaged by arc generation, ion collision, and ion implantation in the chamber. Therefore, processing defects of the substrate and circuit elements formed on the substrate can be minimized. In addition, the second diffusion plate can be grounded to filter the charged ions and electrons in the plasma. Therefore, since only neutral reactive species are introduced onto the substrate, harmful effects of the charged ions and electrons on the substrate and the periphery of the substrate can be minimized. In addition, it is possible to prevent the substrate and the periphery of the substrate from being damaged by the plasma.

In addition, the effective area density of the distribution holes can be easily adjusted by using an insertion body inserted into the distribution holes of the second diffusion plate. Therefore, despite changing process conditions, the neutral reactive species (or plasma) can be evenly distributed. In addition, the second diffusion plate may have a multi-stage structure to control the flow of the neutral reactive species (or plasma).

Although the embodiments have been described with reference to several illustrative embodiments thereof, it should be understood that numerous other modifications and embodiments can be devised by those of ordinary skill in the art that will fall within the spirit and scope of the principles of the invention. More specifically, there may be various changes and modifications to the components and / or arrangements of the subject combination arrangement that fall within the scope of the invention, the drawings, and the scope of the appended patent applications. In addition to variations and modifications in the component parts and / or arrangements, alternative uses will also be apparent to those having ordinary knowledge in the art. Therefore, the protected scope of the present invention should be determined by the technical scope of the accompanying patent application scope.

Claims (9)

A substrate processing apparatus includes a chamber configured to provide a substrate processing space, a processing gas supply line configured to supply a processing gas into the chamber, and a first diffusion plate at an edge portion thereof There is an injection hole therein, and the processing gas is injected through the injection hole; a substrate support member is disposed to face the first diffusion plate and configured to support the substrate; a second diffusion plate is disposed at the first There is a plurality of distribution holes between a diffusion plate and the substrate support; a plasma generating unit configured to generate a plasma in a space between the first diffusion plate and the second diffusion plate; And a side wall member connected to an edge of the second diffuser plate and having a plurality of air inlet holes. The substrate processing apparatus according to claim 1, wherein the second diffusion plate has an effective area density of the distribution holes, and the distribution holes are different from each other according to a position of the distribution holes. The substrate processing apparatus according to item 2 of the scope of patent application, wherein the effective area density of the distribution holes in a central portion of the second diffusion plate is greater than that of the distribution holes in an edge of the second diffusion plate Effective area density in sections. The substrate processing apparatus according to item 1 of the scope of patent application, further comprising an insertion body inserted into each of the distribution holes to adjust an opening area of the second diffusion plate. The substrate processing apparatus according to item 4 of the scope of patent application, wherein the insertion body has a through hole passing through a central portion of the insertion body. The substrate processing apparatus according to item 1 of the scope of patent application, wherein the second diffusion plate has a multi-stage structure including a plurality of stages, and the distribution holes in the stages adjacent to each other are different from each other in position. . The substrate processing apparatus according to item 1 of the scope of patent application, further comprising a position adjustment unit configured to adjust a distance between the first diffusion plate and the second diffusion plate. The substrate processing apparatus according to item 1 of the scope of patent application, further comprising a plurality of exhaust ports along a periphery of the substrate support at a position adjacent to an inner wall of the chamber. The circles are arranged symmetrically to each other and have a multi-level structure. The substrate processing apparatus according to item 1 of the scope of patent application, further comprising a blocking ring extending from an edge portion of the substrate support along a periphery of the substrate support.