TWI629802B - Photoelectric conversion element, electric module and method for producing photoelectric conversion element - Google Patents

Photoelectric conversion element, electric module and method for producing photoelectric conversion element Download PDF

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TWI629802B
TWI629802B TW104101287A TW104101287A TWI629802B TW I629802 B TWI629802 B TW I629802B TW 104101287 A TW104101287 A TW 104101287A TW 104101287 A TW104101287 A TW 104101287A TW I629802 B TWI629802 B TW I629802B
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substrate
electrode
conductive film
photoelectric conversion
wall portion
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TW201537763A (en
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大智弘
中嶋節男
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日商積水化學工業股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2068Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2077Sealing arrangements, e.g. to prevent the leakage of the electrolyte
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2027Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2059Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一種光電轉換元件,其特徵在於具備:第1電極,其於一基板之板面形成有透明導電膜,於上述透明導電膜之表面形成有半導體層;第2電極,其於與上述一基板隔開間隔地對向配置之另一基板之板面,以與上述透明導電膜對向之方式,形成有對向導電膜;及電解質,其被密封於該等第1電極與第2電極之間;且上述一基板及上述另一基板中的至少一者,於密封上述電解質之外周壁部之內側彎折或彎曲,並朝對向配置之上述另一基板或上述一基板突出。 A photoelectric conversion element, comprising: a first electrode having a transparent conductive film formed on a surface of a substrate; a semiconductor layer formed on the surface of the transparent conductive film; and a second electrode separated from the substrate. An opposing conductive film is formed on the plate surface of the other substrate that is disposed to be opposed to each other at a distance from the transparent conductive film; and an electrolyte is sealed between the first electrode and the second electrode. And at least one of the one substrate and the other substrate is bent or bent inside the outer peripheral wall portion sealing the electrolyte, and protrudes toward the other substrate or the one substrate arranged oppositely.

Description

光電轉換元件、電氣模組及光電轉換元件之製造方法 Photoelectric conversion element, electric module and manufacturing method of photoelectric conversion element

本發明係關於一種光電轉換元件、電氣模組及光電轉換元件之製造方法。 The invention relates to a method for manufacturing a photoelectric conversion element, an electric module and a photoelectric conversion element.

近年來,太陽電池作為代替石化燃料之綠色能源之發電裝置而受關注,並不斷推進矽(Si)系太陽電池及色素增感型太陽電池之開發。尤其是色素增感型太陽電池作為廉價並容易量產者,對其構造及製造方法進行廣泛研究並開發(例如下述專利文獻1)。 In recent years, solar cells have attracted attention as a power generation device instead of fossil fuels, and the development of silicon (Si) solar cells and dye-sensitized solar cells has been continuously promoted. In particular, a dye-sensitized solar cell has been extensively researched and developed as a cheap and easy mass-producer for its structure and manufacturing method (for example, the following Patent Document 1).

如圖11所示,專利文獻1中記載之色素增感太陽電池100具備:第1電極104,其於透明基板101之板面形成有透明導電膜102,且於透明導電膜102之表面形成有載持色素之半導體層103;第2電極107,其於對向基板105形成有以與透明導電膜102對向之方式設置之對向導電膜106;密封材108,其包圍半導體層103並且使第1電極104之外周壁部與第2電極107之外周壁部貼合而形成內部空間S且將該內部空間S密封;及電解液109,其注入至上述內部空間S。 As shown in FIG. 11, the dye-sensitized solar cell 100 described in Patent Document 1 includes a first electrode 104 having a transparent conductive film 102 formed on a surface of a transparent substrate 101 and a surface formed on the surface of the transparent conductive film 102. A semiconductor layer 103 carrying a pigment; a second electrode 107 having an opposite conductive film 106 formed on the opposite substrate 105 so as to face the transparent conductive film 102; and a sealing material 108 surrounding the semiconductor layer 103 and The outer peripheral wall portion of the first electrode 104 is bonded to the outer peripheral wall portion of the second electrode 107 to form an internal space S and seal the internal space S; and an electrolyte 109 is injected into the internal space S.

[專利文獻1]日本特開2011-49140號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2011-49140

且說,通常,色素增感太陽電池100由於必須將電解液109大量填充至內部空間S以使氣泡難以進入內部空間S,故而成為透明基板101與對向基板105於內部空間S之中央附近彎曲而隆起,且電解液109之層之厚度較配置有密封材108之部位增大之彎曲形狀。 Furthermore, in general, since the dye-sensitized solar cell 100 must fill the internal space S with a large amount of the electrolytic solution 109 to prevent bubbles from entering the internal space S, the transparent substrate 101 and the opposing substrate 105 are bent near the center of the internal space S. The shape of the bulge is increased, and the thickness of the layer of the electrolyte 109 is larger than that of the portion where the sealing material 108 is disposed.

然而,於色素增感太陽電池中,若電解液109於內部空間S之中央附近較厚,則通過電解液109而到達至半導體層103之入射光減少,另外電子至半導體層103為止之移動距離增長,故而存在氧化還原反應之效率降低之問題。 However, in a dye-sensitized solar cell, if the electrolytic solution 109 is thick near the center of the internal space S, the incident light reaching the semiconductor layer 103 through the electrolytic solution 109 is reduced, and the moving distance of electrons to the semiconductor layer 103 Increase, so there is a problem that the efficiency of the redox reaction decreases.

因此,本發明係鑒於上述問題,課題在於提供一種抑制入射光之減少及氧化還原反應之效率降低之光電轉換元件。 Therefore, the present invention has been made in view of the above problems, and an object thereof is to provide a photoelectric conversion element that suppresses a decrease in incident light and a decrease in efficiency of a redox reaction.

本發明之光電轉換元件之特徵在於具備:第1電極,其於一基板之板面形成有透明導電膜,於上述透明導電膜之表面形成有半導體層;第2電極,其於與上述一基板隔開間隔地對向配置之另一基板之板面,以與上述透明導電膜對向之方式,形成有對向導電膜;及電解質,其被密封於該等第1電極與第2電極之間;且上述一基板及上述另一基板中的至少一者,於密封上述電解質之外周壁部之內側彎折或彎曲,並朝對向配置之上述另一基板或上述一基板突出。 The photoelectric conversion element of the present invention is characterized by comprising: a first electrode having a transparent conductive film formed on a surface of a substrate; a semiconductor layer formed on the surface of the transparent conductive film; and a second electrode provided between the first electrode and the substrate. An opposite conductive film is formed on the plate surface of the other substrate that is disposed opposite to each other at a distance from the transparent conductive film; and an electrolyte is sealed between the first electrode and the second electrode. And at least one of the one substrate and the other substrate is bent or bent inside the outer peripheral wall portion sealing the electrolyte, and protrudes toward the other substrate or the one substrate arranged oppositely.

根據該構成,上述一基板及上述另一基板中的至少一者,於密封上述電解質之外周壁部之內側彎折或彎曲,藉此可使上述外周壁部之內側具有 對朝向與上述突出之方向為相反之方向之彎曲之強度。因此,可防止一基板與另一基板朝彼此遠離之方向隆起。而且,可使一基板彎曲而接近對向之另一基板。因此,可縮小一基板與另一基板之距離,而防止因電解質之層變厚而導致之入射光之減少,及實現由電子之移動距離之縮短所帶來之氧化還原反應之效率化。 According to this configuration, at least one of the one substrate and the other substrate is bent or bent inside the outer peripheral wall portion that seals the electrolyte, so that the inner side of the outer peripheral wall portion can be provided with The strength of the bend in the direction opposite to the direction of the protrusion. Therefore, it is possible to prevent one substrate and the other substrate from bulging in a direction away from each other. Moreover, one substrate can be bent to be close to the opposite substrate. Therefore, it is possible to reduce the distance between one substrate and another substrate, to prevent the reduction of incident light due to the thickening of the layer of the electrolyte, and to realize the efficiency of the redox reaction caused by the shortening of the moving distance of the electrons.

本發明之上述一基板及上述另一基板中的至少一者亦可設為如下構成,即具備:側壁部,其於密封上述電解質之外周壁部之內側朝上述對向配置之上述另一基板或上述一基板彎折並沿著上述外周壁部而形成;及內側壁部,其形成於該側壁部之前端之內側;且該側壁部相對於上述外周壁部傾斜。 At least one of the above-mentioned one substrate and the other substrate of the present invention may be configured to include a side wall portion disposed on the inside of the outer peripheral wall portion sealing the electrolyte toward the opposite substrate. Or the substrate is bent and formed along the outer peripheral wall portion; and the inner side wall portion is formed inside the front end of the side wall portion; and the side wall portion is inclined with respect to the outer peripheral wall portion.

根據該構成,一基板或另一基板被彎折,藉此可提高對朝與該彎折方向交叉之方向之彎曲之強度。因此,可防止一基板與另一基板朝彼此遠離之方向隆起。而且,可縮小一基板與另一基板之距離,而防止因電解質之層變厚而導致之入射光之減少,及實現由電子之移動距離之縮短所帶來之氧化還原反應之效率化。 According to this configuration, one substrate or the other substrate is bent, whereby the strength of the bending in a direction crossing the bending direction can be increased. Therefore, it is possible to prevent one substrate and the other substrate from bulging in a direction away from each other. Moreover, the distance between one substrate and the other substrate can be reduced to prevent a decrease in incident light due to the thickening of the layer of the electrolyte, and to realize the efficiency of the redox reaction caused by the shortening of the moving distance of the electrons.

本發明之上述一基板亦可設為於密封上述電解質之外周壁部之內側彎曲之構成。 The above-mentioned one substrate of the present invention may have a configuration in which it is bent on the inside of the peripheral wall portion where the electrolyte is sealed.

根據該構成,防止一基板以朝向遠離對向之另一基板之方向隆起之方式彎曲。又,由於使一基板彎曲而接近對向之另一基板,故而可縮小一基板與另一基板之距離而效率良好地進行氧化還原反應。 According to this configuration, one substrate is prevented from being bent so as to be swollen in a direction away from the opposite substrate. In addition, since one substrate is bent to be close to the opposite substrate, the distance between one substrate and the other substrate can be reduced and the redox reaction can be performed efficiently.

本發明之朝向上述另一基板或上述一基板突出之上述一基板或上述另一基板中的至少一者較佳為由樹脂膜形成。 In the present invention, at least one of the one substrate or the other substrate protruding toward the other substrate or the one substrate is preferably formed of a resin film.

根據該構成,可簡便且有效地製造上述光電轉換元件。 According to this configuration, the above-mentioned photoelectric conversion element can be easily and efficiently manufactured.

本發明之光電轉換元件較佳為,上述一基板之上述外周壁部與上述另一基板之上述外周壁部之間係藉由密封材接著,且上述密封材之與上述彎折或彎曲之外周壁部之內側對向的角部被倒角。 In the photoelectric conversion element of the present invention, it is preferable that the outer peripheral wall portion of the one substrate and the outer peripheral wall portion of the other substrate are connected by a sealing material, and the sealing material and the bent or bent outer periphery are connected. The corners facing the inside of the wall are chamfered.

根據該構成,由於可使於上述外周壁部之內側被彎折或彎曲之上述一基板及/或上述另一基板之彎折角度或彎曲角度平緩,故而不易於透明導電膜及/或對向導電膜產生損傷或破裂。 According to this configuration, since the bending angle or bending angle of the one substrate and / or the other substrate that is bent or bent inside the outer peripheral wall portion can be made gentle, it is not easy to face the transparent conductive film and / or the opposite direction. The conductive film is damaged or cracked.

本發明之光電轉換元件亦可為,上述密封材沿著上述外周壁部之內側之彎折或彎曲的形狀而被倒角。 In the photoelectric conversion element of the present invention, the sealing material may be chamfered along a bent or curved shape inside the outer peripheral wall portion.

根據該構成,可使上述一基板及/或上述另一基板沿著倒角後之上述密封材彎折或彎曲。 According to this configuration, the one substrate and / or the other substrate can be bent or bent along the chamfered sealing material.

本發明之電氣模組之特徵在於具備複數個上述任一光電轉換元件。 The electrical module of the present invention is characterized by being provided with a plurality of any one of the above-mentioned photoelectric conversion elements.

根據本發明,可獲得發揮上述任一作用及功能之電氣模組。 According to the present invention, it is possible to obtain an electric module that performs any of the above functions and functions.

上述任一光電轉換元件之製造方法之特徵在於:藉由進行加壓加工而形成朝向上述另一基板或上述一基板突出之上述一基板及上述另一基板中的至少一者。 The method for manufacturing any one of the above-mentioned photoelectric conversion elements is characterized in that at least one of the one substrate and the other substrate protruding toward the other substrate or the one substrate is formed by performing press processing.

根據本發明,可簡便地製造上述光電轉換元件。 According to the present invention, the above-mentioned photoelectric conversion element can be easily manufactured.

上述任一光電轉換元件之製造方法較佳為,形成半導體層並對上述一基板賦予壓縮內部應力而使上述一基板彎曲。 It is preferable that the method for manufacturing any one of the photoelectric conversion elements is to form a semiconductor layer and apply compressive internal stress to the one substrate to bend the one substrate.

根據該構成,可容易地使上述一基板彎曲。 According to this configuration, the one substrate can be easily bent.

本發明之上述半導體層較佳為藉由氣溶膠沈積法而形成。 The semiconductor layer of the present invention is preferably formed by an aerosol deposition method.

根據本方法,可容易地使一基板彎曲。 According to this method, a substrate can be easily bent.

根據本發明,由於可抑制入射光之減少及氧化還原反應之效率之降低,故而發揮可提高光電轉換元件及電氣模組之發電效率之效果。 According to the present invention, since the reduction of the incident light and the reduction of the efficiency of the redox reaction can be suppressed, the effect of improving the power generation efficiency of the photoelectric conversion element and the electric module is exerted.

又,根據本發明之光電轉換元件之製造方法,發揮可容易地製造本發明之光電轉換元件之效果。 In addition, according to the method for manufacturing a photoelectric conversion element of the present invention, there is an effect that the photoelectric conversion element of the present invention can be easily manufactured.

1A、1B、1C、1D‧‧‧太陽電池(光電轉換元件) 1A, 1B, 1C, 1D ‧‧‧ solar cells (photoelectric conversion elements)

2‧‧‧一基板 2‧‧‧ a substrate

2a‧‧‧板面 2a‧‧‧board surface

2p‧‧‧外周壁部 2p‧‧‧ peripheral wall

3‧‧‧透明導電膜 3‧‧‧ transparent conductive film

3a‧‧‧表面 3a‧‧‧ surface

4‧‧‧半導體層 4‧‧‧ semiconductor layer

5‧‧‧第1電極 5‧‧‧The first electrode

6‧‧‧另一基板 6‧‧‧ another substrate

6a‧‧‧板面 6a‧‧‧board surface

6p‧‧‧外周壁部 6p‧‧‧ peripheral wall

7‧‧‧對向導電膜 7‧‧‧ Opposite conductive film

7a‧‧‧表面 7a‧‧‧ surface

8‧‧‧第2電極 8‧‧‧ 2nd electrode

11‧‧‧電解質(電解液) 11‧‧‧ Electrolyte (electrolyte)

15‧‧‧側壁部 15‧‧‧ sidewall

16‧‧‧內側壁部 16‧‧‧ inner wall

50‧‧‧角部 50‧‧‧ Corner

圖1係模式性表示本發明之第1實施形態之光電轉換元件之剖面圖。 FIG. 1 is a cross-sectional view schematically showing a photoelectric conversion element according to a first embodiment of the present invention.

圖2係模式性表示本發明之第1實施形態之光電轉換元件之一基板之斜視圖。 FIG. 2 is a perspective view schematically showing a substrate of a photoelectric conversion element according to the first embodiment of the present invention.

圖3係模式性表示本發明之第1實施形態之光電轉換元件之製造步驟之一部分之剖面圖。 FIG. 3 is a cross-sectional view schematically showing a part of the manufacturing steps of the photoelectric conversion element according to the first embodiment of the present invention.

圖4係模式性表示本發明之第1實施形態之光電轉換元件之製造步驟之一部分之剖面圖。 FIG. 4 is a cross-sectional view schematically showing a part of the manufacturing steps of the photoelectric conversion element according to the first embodiment of the present invention.

圖5係模式性表示本發明之第1實施形態之光電轉換元件之製造步驟之一部分之剖面圖。 FIG. 5 is a cross-sectional view schematically showing a part of the manufacturing steps of the photoelectric conversion element according to the first embodiment of the present invention.

圖6係模式性表示本發明之第1實施形態之光電轉換元件之製造步驟之一部分之剖面圖。 FIG. 6 is a cross-sectional view schematically showing a part of the manufacturing steps of the photoelectric conversion element according to the first embodiment of the present invention.

圖7係模式性表示本發明之第1實施形態之光電轉換元件之製造步驟之一部分之剖面圖。 FIG. 7 is a cross-sectional view schematically showing a part of the manufacturing steps of the photoelectric conversion element according to the first embodiment of the present invention.

圖8係模式性表示本發明之第1實施形態之光電轉換元件之製造步驟之一部分之剖面圖。 FIG. 8 is a cross-sectional view schematically showing a part of the manufacturing steps of the photoelectric conversion element according to the first embodiment of the present invention.

圖9係模式性表示本發明之第2實施形態之光電轉換元件之剖面圖。 Fig. 9 is a sectional view schematically showing a photoelectric conversion element according to a second embodiment of the present invention.

圖10(a)~(c)係模式性表示作為本發明之實施例而表示之光電轉換元件之剖面圖。 10 (a) to (c) are cross-sectional views schematically showing a photoelectric conversion element shown as an embodiment of the present invention.

圖11係表示習知之光電轉換元件之剖面圖。 Fig. 11 is a sectional view showing a conventional photoelectric conversion element.

圖12係模式性表示本發明之第3實施形態之光電轉換元件之剖面圖。 Fig. 12 is a sectional view schematically showing a photoelectric conversion element according to a third embodiment of the present invention.

圖13係模式性表示本發明之第3實施形態之光電轉換元件之剖面圖。 Fig. 13 is a sectional view schematically showing a photoelectric conversion element according to a third embodiment of the present invention.

以下,以光電轉換元件為色素增感太陽電池之情形為例,參照圖對本發明之光電轉換元件及電氣模組之各實施形態進行說明。 Hereinafter, taking the case where the photoelectric conversion element is a dye-sensitized solar cell as an example, each embodiment of the photoelectric conversion element and the electric module of the present invention will be described with reference to the drawings.

(第1實施形態) (First Embodiment)

如圖1所示,色素增感太陽電池(光電轉換元件)(以下稱為「太陽電池」)1A具備:第1電極5,其具備形成於一基板2之板面2a之透明導電膜3、與形成於透明導電膜3之表面3a之半導體層4;及第2電極8,其於與一基板2隔開間隔地對向配置之另一基板6之板面6a以與透明導電膜3對向配置之方式形成有對向導電膜7。 As shown in FIG. 1, a dye-sensitized solar cell (photoelectric conversion element) (hereinafter referred to as a “solar cell”) 1A includes a first electrode 5 including a transparent conductive film 3 formed on a plate surface 2 a of a substrate 2, A semiconductor layer 4 formed on the surface 3a of the transparent conductive film 3; and a second electrode 8 on the plate surface 6a of the other substrate 6 disposed opposite to the substrate 2 at a distance from the substrate 2 to face the transparent conductive film 3 A facing conductive film 7 is formed in a direction-oriented manner.

而且,第1電極5與第2電極8之間係於介裝有分隔件9之狀態下,於一基板2之外周壁部2p與另一基板6之外周壁部6p處藉由密封材10以包圍第1電極5及第2電極8之外周之方式被密封成框狀,並於經密封之內部空間S填充有電解液11。 In addition, between the first electrode 5 and the second electrode 8 is a state in which a separator 9 is interposed, and a sealing material 10 is provided between the outer peripheral wall portion 2p of one substrate 2 and the outer peripheral wall portion 6p of the other substrate 6. The first electrode 5 and the second electrode 8 are sealed in a frame shape so as to surround the outer periphery, and the sealed internal space S is filled with the electrolytic solution 11.

此處,一基板2如圖1、圖2所示般於密封上述電解液11之外周壁部2p之內側朝對向配置之另一基板6彎折,且外周壁部2p之內側之壁部15、16朝另一基板6突出。 Here, as shown in FIG. 1 and FIG. 2, a substrate 2 is bent toward the other substrate 6 disposed on the inside of the outer peripheral wall portion 2 p sealing the electrolyte solution 11, and the inner wall portion of the outer peripheral wall portion 2 p is bent. 15 and 16 protrude toward the other substrate 6.

具體而言,一基板2具備:外周壁部2p,其以自基板2之外緣e進入內側特定尺寸之特定之寬度尺寸d而形成;側壁部15,其於外周壁部2p之內側朝另一基板6彎折,並沿著外周壁部2p傾斜地豎立(下垂);及內側壁部16,其於側壁部15之前端再次彎折並以封堵由側壁部15之前端所包圍之區域之方式形成;且形成朝另一基板6突出之凸部17。 Specifically, a substrate 2 is provided with an outer peripheral wall portion 2p formed with a specific width dimension d which enters the inner specific dimension from the outer edge e of the substrate 2; and a side wall portion 15 which faces the other side from the inner side of the outer peripheral wall portion 2p. A base plate 6 is bent and erected obliquely (hanging down) along the outer peripheral wall portion 2p; and an inner side wall portion 16 is bent again at the front end of the side wall portion 15 to block the area surrounded by the front end of the side wall portion 15 And a convex portion 17 protruding toward the other substrate 6 is formed.

一基板2及另一基板6分別係成為透明導電膜3及對向導電膜7之基台之構件,例如係藉由聚萘二甲酸乙二酯(PEN)、聚對苯二甲酸乙二酯(PET)等透明之熱塑性樹脂材料形成。 One substrate 2 and the other substrate 6 are components of the abutment of the transparent conductive film 3 and the opposite conductive film 7, respectively, for example, by polyethylene naphthalate (PEN), polyethylene terephthalate (PET) and other transparent thermoplastic resin materials.

再者,一基板2及另一基板6亦可為形成為膜狀者。 In addition, one substrate 2 and the other substrate 6 may be formed into a film shape.

透明導電膜3形成於一基板2之板面2a之大致整面。 The transparent conductive film 3 is formed on the substantially entire surface of the plate surface 2 a of a substrate 2.

透明導電膜3之材料例如使用氧化銦錫、氧化鋅等。 The material of the transparent conductive film 3 is, for example, indium tin oxide, zinc oxide, or the like.

半導體層4係下述具有自增感色素接收電子並傳輸之功能者,且藉由由金屬氧化物構成之半導體而形成於透明導電膜3之表面3a。作為金屬氧化物,例如可使用氧化鈦(TiO2)、氧化鋅(ZnO)、氧化錫(SnO2)等。 The semiconductor layer 4 has a function of receiving and transmitting electrons from a sensitizing dye described below, and is formed on the surface 3 a of the transparent conductive film 3 by a semiconductor made of a metal oxide. Examples of the metal oxide include titanium oxide (TiO 2 ), zinc oxide (ZnO), and tin oxide (SnO 2 ).

半導體層4載持增感色素。增感色素由有機色素或金屬錯合物色素構成。作為有機色素,例如可使用香豆素系、多烯系、花青系、半花青系、噻吩系等各種有機色素。作為金屬錯合物色素,可較佳地使用例如釕錯合物等。 The semiconductor layer 4 carries a sensitizing dye. The sensitizing dye is composed of an organic dye or a metal complex dye. As an organic pigment, various organic pigments, such as a coumarin system, a polyene system, a cyanine system, a hemicyanine system, and a thiophene system, can be used, for example. As the metal complex dye, for example, a ruthenium complex can be preferably used.

如上述般,於一基板2之一板面2a形成透明導電膜3,並設置形成於透明導電膜3之表面3a之半導體層4而構成第1電極5。 As described above, the transparent conductive film 3 is formed on one plate surface 2 a of a substrate 2, and the semiconductor layer 4 formed on the surface 3 a of the transparent conductive film 3 is provided to constitute the first electrode 5.

對向導電膜7係形成於另一基板6之板面6a之大致整面。 The opposite conductive film 7 is formed on substantially the entire surface of the plate surface 6 a of the other substrate 6.

對向導電膜7之材料例如使用氧化銦錫(ITO)、氧化鋅等。又,於對向導電膜7之表面形成有任意設置之由碳漿、鉑等構成之觸媒層18。 The material of the opposite conductive film 7 is, for example, indium tin oxide (ITO), zinc oxide, or the like. A catalyst layer 18 made of carbon paste, platinum, or the like is arbitrarily provided on the surface of the opposite conductive film 7.

如上述般,於另一基板6之一板面6a形成對向導電膜7,並於對向導電膜7之表面使觸媒層18形成而構成第2電極8。 As described above, the opposite conductive film 7 is formed on one plate surface 6 a of the other substrate 6, and the catalyst layer 18 is formed on the surface of the opposite conductive film 7 to constitute the second electrode 8.

該第2電極8使對向導電膜7與透明導電膜3對向而與第1電極5對向配置。 The second electrode 8 is arranged so that the opposed conductive film 7 faces the transparent conductive film 3 and faces the first electrode 5.

而且,第1電極5與第2電極8係以透明導電膜3之端部3h與對向導電膜7之端部7h分別自太陽電池1A之兩端突出之方式於一方向上錯開而接著。該等端部3h與端部7h構成第1電極5及第2電極8之端子。 The first electrode 5 and the second electrode 8 are staggered in one direction so that the end portion 3h of the transparent conductive film 3 and the end portion 7h of the opposed conductive film 7 protrude from both ends of the solar cell 1A, respectively. These end portions 3h and 7h constitute terminals of the first electrode 5 and the second electrode 8.

再者,電流之提取方法並不限定於本實施形態之構成。 The method of extracting the current is not limited to the configuration of this embodiment.

作為密封材10,可使用熱熔樹脂等。 As the sealing material 10, a hot-melt resin or the like can be used.

該密封材10於位於外周壁部2p之透明導電膜3之表面3a或位於外周壁部6p之對向導電膜7之表面被配置成框狀,並被加熱加壓而將第1電極5與第2電極8之間接著。 The sealing material 10 is arranged in a frame shape on the surface 3a of the transparent conductive film 3 located on the outer peripheral wall portion 2p or on the surface of the opposite conductive film 7 located on the outer peripheral wall portion 6p, and the first electrode 5 and the first electrode 5 are heated and pressed. The second electrodes 8 are connected to each other.

圖1所示之分隔件9使用具有使密封材10及電解液(電解質)11通過之大量之孔(未圖示)之不織布等片材。 As the separator 9 shown in FIG. 1, a sheet such as a nonwoven fabric having a large number of holes (not shown) through which the sealing material 10 and the electrolytic solution (electrolyte) 11 pass is used.

作為電解液11,例如使用乙腈、丙腈等非水系溶劑;及於碘化二甲基丙基咪唑鎓或碘化丁基甲基咪唑鎓等之離子液體等液體成分中混合碘化鋰等支援電解液與碘而成之溶液等。又,為了防止逆向電子移動 反應,電解液11亦可包含第三丁基吡啶。 As the electrolyte solution 11, for example, a non-aqueous solvent such as acetonitrile or propionitrile is used; and a supporting electrolyte solution such as lithium iodide is mixed with a liquid component such as an ionic liquid such as dimethylpropylimidazolium iodide or butylmethylimidazolium iodide. A solution made with iodine. Also, to prevent reverse electron movement In the reaction, the electrolytic solution 11 may also include a third butylpyridine.

藉由將具備上述構成之太陽電池1A串聯連接或並聯連接而成為電氣模組。 The solar cells 1A having the above-described configuration are connected in series or in parallel to form an electrical module.

繼而,使用圖3~圖9對太陽電池1A之製造方法進行說明。 Next, a manufacturing method of the solar cell 1A will be described using FIGS. 3 to 9.

第1實施形態之太陽電池1A之製造方法具備:(1)電極板形成步驟,(II)貼合第1電極5與第2電極8而於該等之間形成內部空間S並將內部空間S密封之貼合步驟,(III)注液孔形成步驟,(IV)注液步驟,及(V)注液孔密封步驟。以下,對各步驟進行說明。 The manufacturing method of the solar cell 1A according to the first embodiment includes: (1) an electrode plate forming step; (II) bonding the first electrode 5 and the second electrode 8 to form an internal space S therebetween, and the internal space S The sealing bonding step, (III) a liquid injection hole forming step, (IV) a liquid injection step, and (V) a liquid injection hole sealing step. Each step will be described below.

(1)<電極板形成步驟> (1) <Electrode plate formation step>

於電極板形成步驟中形成第1電極5及第2電極8,如圖3所示,該第1電極5於一基板2之一板面2a形成透明導電膜3並於透明導電膜3之表面3a形成有半導體層4,如圖4所示,該第2電極8於另一基板6之一板面6a形成對向導電膜7,進而形成有觸媒層18。具體而言,第1電極5及第2電極8係以如下方式形成。 A first electrode 5 and a second electrode 8 are formed in the electrode plate forming step. As shown in FIG. 3, the first electrode 5 forms a transparent conductive film 3 on a plate surface 2 a of a substrate 2 and is on the surface of the transparent conductive film 3. A semiconductor layer 4 is formed at 3 a. As shown in FIG. 4, the second electrode 8 forms an opposite conductive film 7 on a plate surface 6 a of the other substrate 6, and further forms a catalyst layer 18. Specifically, the first electrode 5 and the second electrode 8 are formed as follows.

如圖3所示,作為一基板2,使用PET等形成於基板之內側形成有朝一板面突出之凸部17的板狀構件。作為具備凸部17之板狀構件之製造方法並無特別限定,可藉由加壓加工或射出成型等而較佳地成形。 As shown in FIG. 3, as a substrate 2, a plate-like member formed on the inside of the substrate and having a convex portion 17 protruding toward one plate surface is used as the substrate 2. The manufacturing method of the plate-shaped member provided with the convex part 17 is not specifically limited, It can shape | mold suitably by pressure processing, injection molding, etc.

對一基板2之板面2a之整面濺鍍氧化銦錫(ITO)等而形成透明導電膜3。 The entire surface of the plate surface 2a of a substrate 2 is sputter-plated with indium tin oxide (ITO) or the like to form a transparent conductive film 3.

半導體層4例如係以如下方式形成,即:藉由掩蓋、印刷法等將含有可燒成之氧化鈦之漿料塗佈於透明導電膜3之表面3a,其後於120℃左右之溫度下進行燒成,藉此成為多孔質。再者,於半導體層4形成為由PET等 構成之膜材之情形時,藉由氣溶膠沈積法、冷噴霧法等無需燒成之低溫成膜法以成為多孔質之方式形成於透明導電膜3之表面3a即可。 The semiconductor layer 4 is formed, for example, by applying a paste containing sinterable titanium oxide to the surface 3a of the transparent conductive film 3 by masking, printing, or the like, and thereafter at a temperature of about 120 ° C. By firing, it becomes porous. The semiconductor layer 4 is formed of PET or the like. In the case of a structured film material, it may be formed on the surface 3a of the transparent conductive film 3 by a low-temperature film-forming method that does not require firing, such as an aerosol deposition method or a cold spray method.

於形成半導體層4之後,使半導體層4浸漬於將增感色素溶解於溶劑中而成之增感色素溶液,而使該半導體層4載持增感色素。再者,使半導體層4載持增感色素之方法並不限定於上述,亦採用一面使半導體層4於增感色素溶液中移動一面連續地進行投入、浸漬、提起之方法等。 After the semiconductor layer 4 is formed, the semiconductor layer 4 is immersed in a sensitizing dye solution obtained by dissolving the sensitizing dye in a solvent, and the semiconductor layer 4 carries the sensitizing dye. In addition, the method of carrying the sensitizing dye on the semiconductor layer 4 is not limited to the above, and a method of continuously charging, dipping, and lifting while moving the semiconductor layer 4 in the sensitizing dye solution is also adopted.

藉由以上內容,獲得圖3所示之第1電極5。 With the above, the first electrode 5 shown in FIG. 3 is obtained.

如圖4所示,第2電極8係對由聚對苯二甲酸乙二酯(PET)等構成之另一基板6之一板面6a濺鍍ITO、氧化鋅或鉑等而使對向導電膜7成膜。對向導電膜7亦可為利用印刷法或噴霧法等而形成者。於對向導電膜7之表面使碳漿成膜而形成觸媒層18。 As shown in FIG. 4, the second electrode 8 is formed by sputtering ITO, zinc oxide, platinum, or the like on one surface 6a of another substrate 6 made of polyethylene terephthalate (PET) or the like to make the opposite conductive. The film 7 is formed into a film. The opposite conductive film 7 may be formed by a printing method, a spray method, or the like. A carbon slurry is formed on the surface of the opposite conductive film 7 to form a catalyst layer 18.

(II)<貼合步驟> (II) <Laminating step>

如圖5、圖6所示,貼合步驟係使第1電極5與第2電極8對向配置,並藉由密封材10使各者之外周壁部2p、6p貼合而將第1電極5與第2電極8之間密封之形成內部空間S之步驟。 As shown in FIG. 5 and FIG. 6, the bonding step is to arrange the first electrode 5 and the second electrode 8 to face each other, and to attach the outer peripheral wall portions 2 p and 6 p to each other by the sealing material 10 to bond the first electrode. The step of forming an internal space S sealed between 5 and the second electrode 8.

[密封材10及注液孔形成用構件之配置] [Arrangement of sealing material 10 and member for forming injection hole]

具體而言,如圖5所示,於外周壁部6p以圍繞一周之方式配置具有特定之寬度尺寸之形成為框形狀之片狀之密封材10而包圍觸媒層18。 Specifically, as shown in FIG. 5, a sheet-shaped sealing material 10 formed in a frame shape having a specific width dimension is arranged on the outer peripheral wall portion 6 p so as to surround the catalyst layer 18.

其後,以橫跨密封材10並自另一基板6之外周壁部6p突出之方式配置注液孔形成用構件19。 Thereafter, the liquid injection hole forming member 19 is disposed so as to protrude from the outer peripheral wall portion 6 p of the other substrate 6 across the sealing material 10.

再者,作為注液孔形成用構件19,使用形成為短條狀之脫模性樹脂片材。 In addition, as the member 19 for forming a liquid injection hole, a moldable resin sheet formed into a short strip shape was used.

脫模性樹脂片材例如可使用聚酯、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯等。 As a mold release resin sheet, polyester, polyethylene terephthalate, polybutylene terephthalate, etc. can be used, for example.

[基板之貼合] [Lamination of substrates]

繼而,於介置有分隔件9之狀態下以使透明導電膜3與對向導電膜7對向之方式將第2電極8抵接於第1電極5。 Then, the second electrode 8 is brought into contact with the first electrode 5 in a state where the separator 9 is interposed so that the transparent conductive film 3 and the opposed conductive film 7 face each other.

[接著步驟] [Next steps]

於接著步驟中,將貼合後之第1電極5及第2電極8之圖5所示之外周壁部2p、6p於積層方向上加熱加壓而使其等接著。此時,注液孔形成用構件19之耐熱溫度高於密封材10之熔融硬化溫度,且非接著性優異,因此不會與接觸注液孔形成用構件19之密封材10接著。因此,注液孔形成用構件19之兩表面成為均未與第1電極5及第2電極8接著之狀態。 In the next step, the outer peripheral wall portions 2p and 6p shown in FIG. 5 after the first electrodes 5 and the second electrodes 8 are bonded together are heated and pressurized in the lamination direction to wait. At this time, since the heat-resistant temperature of the member 19 for forming a liquid injection hole is higher than the melt-hardening temperature of the sealing material 10 and is excellent in non-adhesion, it does not adhere to the sealing material 10 that contacts the member 19 for forming a liquid injection hole. Therefore, both surfaces of the member 19 for forming a liquid injection hole are not in contact with the first electrode 5 and the second electrode 8.

此時,如圖5所示,將第1電極5與第2電極8於一方向(箭頭Y方向)上錯開並貼合,並如圖6所示般使透明導電膜3及對向導電膜7自貼合後之第1電極5與第2電極8之兩端突出而形成端子5t、8t。 At this time, as shown in FIG. 5, the first electrode 5 and the second electrode 8 are staggered and bonded in one direction (direction of arrow Y), and the transparent conductive film 3 and the opposite conductive film are made as shown in FIG. 6. 7 Protrudes from both ends of the first electrode 5 and the second electrode 8 after bonding to form terminals 5t and 8t.

(III)<注液孔形成步驟> (III) <Step for forming injection hole>

於注液孔形成步驟中,如圖7所示,抽出自另一基板6之外周壁部6p突出之注液孔形成用構件19(參照圖6),使內部空間S開口而形成可注入電解液11之注液孔21。 In the liquid injection hole forming step, as shown in FIG. 7, the liquid injection hole forming member 19 (refer to FIG. 6) protruding from the outer peripheral wall portion 6 p of the other substrate 6 is extracted, and the internal space S is opened to form an injectable electrolytic solution.液 11 的 液 孔 21。 The liquid injection hole 21.

藉由以上之步驟,獲得於第1電極5與第2電極8之間形成有內部空間S之接合體1a。 Through the above steps, a bonded body 1a having an internal space S formed between the first electrode 5 and the second electrode 8 is obtained.

(IV)<注液步驟> (IV) <Infusion step>

於注液步驟中,將於上述步驟中獲得之接合體1a放置於減壓環境下, 使注液孔21浸漬於保持電解液11之容器(未圖示)並藉由抽真空而將電解液11如該電解液溢出程度般大量注入至內部空間S。 In the liquid injection step, the joint body 1a obtained in the above step is placed under a reduced pressure environment. The liquid injection hole 21 is immersed in a container (not shown) that holds the electrolytic solution 11, and the electrolytic solution 11 is injected into the internal space S in a large amount as the electrolytic solution overflows by evacuation.

(V)<注液孔密封步驟> (V) <Step for sealing the injection hole>

其後,於注液孔密封步驟中,於注入電解液11後利用接著劑等使注液孔21閉合而將內部空間S密封(參照圖8)。此時,一基板2由於形成沿著外周壁部2p彎折並朝另一基板6突出之凸部17,故而一基板2被賦予對形成有由彎折而產生之稜線17a(亦形成於與17a正交之方向)之方向(即與彎折方向正交之方向)之彎曲之強度。因此,即便大量填充電解液11並進行密封以使氣泡不會進入內部空間S,一基板2亦可抵抗因電解液11而欲向厚度方向外側隆起之力,從而將內側壁部16維持為平坦。 Thereafter, in the liquid injection hole sealing step, after the electrolyte 11 is injected, the liquid injection hole 21 is closed with an adhesive or the like to seal the internal space S (see FIG. 8). At this time, since one substrate 2 is formed with a convex portion 17 that is bent along the outer peripheral wall portion 2p and protrudes toward the other substrate 6, the one substrate 2 is provided with a ridge line 17a (also formed on the substrate) formed by the bending. 17a), the strength of the bending in the direction (that is, the direction orthogonal to the bending direction). Therefore, even if the electrolytic solution 11 is filled in a large amount and sealed so that bubbles do not enter the internal space S, a substrate 2 can resist the force that is intended to bulge outward in the thickness direction due to the electrolytic solution 11, thereby keeping the inner side wall portion 16 flat. .

如上所述般,獲得將一基板2之內側壁部16維持為平坦之圖1所示之太陽電池1A。 As described above, the solar cell 1A shown in FIG. 1 in which the inner wall portion 16 of a substrate 2 is kept flat is obtained.

如此,根據太陽電池1A或將太陽電池1A串聯連接或並聯連接而成之電氣模組,如圖1所示般形成為將一基板2彎折且使內側壁部16朝另一基板6突出。因此,可使供電解液11注入之內部空間S之厚度尺寸儘可能縮小,並且可藉由一基板2之彎折而對內側壁部16賦予抵抗朝厚度方向外側之彎曲之強度。 In this way, according to the solar cell 1A or the electrical module in which the solar cells 1A are connected in series or in parallel, as shown in FIG. 1, a substrate 2 is bent and the inner wall portion 16 protrudes toward the other substrate 6. Therefore, the thickness dimension of the internal space S into which the electrolytic solution 11 is injected can be reduced as much as possible, and the inner wall portion 16 can be given a strength to resist the bending outward in the thickness direction by bending a substrate 2.

因此,即便將電解液11大量注入至內部空間S,亦可避免一基板2於內部空間S之中央部朝外側隆起,且可將形成電解液11之層之內部空間S之厚度維持為儘可能縮小之固定尺寸。而且,根據本發明之該構成,可獲得如下效果,即:可抑制因電解液11之層之厚度尺寸於內部空間S之中央部增大而導致產生之入射光之損失,並且可防止電子之移動距 離變長而使氧化還原反應之效率降低。 Therefore, even if a large amount of electrolyte 11 is injected into the internal space S, a substrate 2 can be prevented from bulging outward at the center of the internal space S, and the thickness of the internal space S of the layer forming the electrolyte 11 can be maintained as much as possible. Reduced fixed size. Furthermore, according to the configuration of the present invention, it is possible to obtain the effect that the loss of incident light caused by the increase in the thickness of the layer of the electrolyte solution 11 at the central portion of the internal space S can be prevented, and the electron Moving distance The longer the distance becomes, the lower the efficiency of the redox reaction is.

又,一基板2於側壁部15與外周壁部2p之間及側壁部15與內側壁部16之間彎折成鈍角。因此,與將一基板2垂直地彎折或彎折成銳角而形成凸部17之情形時相比,可藉由加壓加工而容易地形成凸部。又,藉由將一基板2彎折成鈍角,可獲得如下效果,即:可防止於彎折之部位一基板2之壁厚變薄,從而可儘可能地維持由厚度決定之強度且彎折。 A substrate 2 is bent at an obtuse angle between the side wall portion 15 and the outer peripheral wall portion 2 p and between the side wall portion 15 and the inner side wall portion 16. Therefore, compared with the case where one substrate 2 is bent vertically or at an acute angle to form the convex portion 17, the convex portion can be easily formed by press working. In addition, by bending a substrate 2 into an obtuse angle, the following effect can be obtained: the wall thickness of the substrate 2 can be prevented from becoming thin at the bent portion, so that the strength determined by the thickness can be maintained and bent as much as possible .

再者,一基板2及/或另一基板6較佳為由樹脂膜(例如膜之厚度為25μm~200μm)形成。於此情形時,可獲得如下效果,即:利用例如卷對卷方式(roll-to-roll)搬送上述樹脂膜,並於該過程中使基板彎折或彎曲,藉此可提高生產效率。 Furthermore, it is preferable that one substrate 2 and / or the other substrate 6 be formed of a resin film (for example, the thickness of the film is 25 μm to 200 μm). In this case, an effect can be obtained in that, for example, the above-mentioned resin film is transported by a roll-to-roll method, and the substrate is bent or bent in the process, thereby improving production efficiency.

而且,即便一基板2及/或另一基板6係由此種樹脂膜而形成,亦可藉由使一基板2及/或另一基板6彎折或彎曲而補強基板之剛性之不足,從而有效地防止因一基板2與另一基板6彎曲隆起所導致之光電轉換效率之降低。 Furthermore, even if one substrate 2 and / or the other substrate 6 is formed of such a resin film, the rigidity of the substrate can be reinforced by bending or bending the one substrate 2 and / or the other substrate 6 so that It can effectively prevent the reduction of the photoelectric conversion efficiency caused by the bending and bulging of one substrate 2 and the other substrate 6.

又,藉由於側壁部15與外周壁部2p之間及側壁部15與內側壁部16之間彎折成鈍角,可獲得能容易地於面對內部空間S之透明導電膜3之整個面形成半導體層4的效果。因此,根據太陽電池1A或將太陽電池1A串聯連接或並聯連接而成之電氣模組,可獲得能於更大之面積上進行氧化還原反應的效果。 In addition, since the side wall portion 15 and the outer peripheral wall portion 2p and the side wall portion 15 and the inner side wall portion 16 are bent at an obtuse angle, it is possible to easily form the entire surface of the transparent conductive film 3 facing the inner space S. Effect of the semiconductor layer 4. Therefore, according to the solar cell 1A or an electrical module in which the solar cells 1A are connected in series or in parallel, an effect that a redox reaction can be performed over a larger area can be obtained.

繼而,使用圖9對本發明之第2實施形態進行說明。於本實施形態中對與第1實施形態相同之構成標註相同符號並省略其說明,僅對與第1實施形態之不同點進行說明。 Next, a second embodiment of the present invention will be described using FIG. 9. In this embodiment, the same components as those in the first embodiment are denoted by the same reference numerals and descriptions thereof are omitted, and only differences from the first embodiment will be described.

於本實施形態中,一基板2係以朝另一基板6略微突出之方式形成彎曲面,除此以外,以與第1實施形態相同之方式構成、製造。 In this embodiment, a curved surface is formed on one substrate 2 so as to protrude slightly toward the other substrate 6, and is constructed and manufactured in the same manner as in the first embodiment except that it is a curved surface.

根據該構成,一基板2係以朝另一基板6略微突出之方式形成彎曲面2a、2b,即,對另一基板6後彎。因此,即便將電解液11大量填充至內部空間S而因電解液11導致一基板2被施加向外側隆起之壓力,亦可藉由一基板2之彎曲而抵抗該壓力,從而防止一基板2於內部空間S之中央部朝外側隆起。 According to this configuration, the curved surfaces 2 a and 2 b are formed on one substrate 2 so as to slightly protrude toward the other substrate 6, that is, the other substrate 6 is bent backward. Therefore, even if a large amount of electrolyte 11 is filled into the internal space S, a pressure on a substrate 2 to be bulged to the outside due to the electrolyte 11 can be resisted by the bending of a substrate 2 to prevent a substrate 2 from The central portion of the internal space S bulges outward.

又,呈略微彎曲形狀之一基板2除可藉由網版印刷等周知之形成方法以外,可利用粉體噴塗法(例如,氣溶膠沈積法)於一基板2之一板面形成膜,藉此亦容易且有效地形成。 In addition, one of the substrates 2 having a slightly curved shape can be formed on a surface of a substrate 2 by a powder spraying method (for example, an aerosol deposition method) in addition to a well-known formation method such as screen printing. This is also easily and efficiently formed.

即,使由氧化物半導體構成之微粒子等分散於氮氣(N2)中,並自噴嘴朝一基板2高速噴射由氧化物半導體構成之微粒子,從而於一基板2之透明導電膜3形成半導體層4。此時,於對一基板2施加了熱量之狀態下使由氧化物半導體構成之微粒子成膜,其後進行冷卻,或者於對一基板2施加張力而使之伸長之狀態下使氧化物半導體粒子成膜,其後解除張力,藉此可使一基板2之與成膜有由氧化物半導體構成之微粒子之側為相反側之板面2b收縮,從而可使一基板2以朝板面2a側突出之方式彎曲(壓縮內部應力)。 That is, fine particles made of an oxide semiconductor are dispersed in nitrogen (N 2 ), and fine particles made of an oxide semiconductor are sprayed from a nozzle toward a substrate 2 at high speed, so that a semiconductor layer 4 is formed on a transparent conductive film 3 of a substrate 2. . At this time, the microparticles made of an oxide semiconductor are formed into a film while heat is applied to a substrate 2 and then cooled, or the oxide semiconductor particles are extended while a substrate 2 is stretched under tension. Forming a film, and then releasing the tension, thereby shrinking a substrate 2 with a plate surface 2b on the side opposite to the side where the fine particles made of an oxide semiconductor are formed, thereby allowing a substrate 2 to face the plate surface 2a Bend in a protruding way (compressing internal stress).

再者,由氧化物半導體構成之微粒子等粒子之大小為5nm~1000nm之範圍即可,較理想為10nm~500nm之範圍,進而理想為15nm~50nm。 In addition, the size of particles such as fine particles made of an oxide semiconductor may be in a range of 5 nm to 1000 nm, more preferably in a range of 10 nm to 500 nm, and even more preferably 15 nm to 50 nm.

又,一基板2之彎曲面2a、2b之曲率為0.01~0.1之範圍即可,較理想 為0.03~0.06之範圍。 In addition, the curvature of the curved surfaces 2a and 2b of a substrate 2 may be in the range of 0.01 to 0.1, which is ideal. The range is 0.03 ~ 0.06.

因此,於本實施形態中亦與第一實施形態之情形相同,可獲得如下效果,即:可儘可能縮小形成電解液11之層之內部空間S之厚度尺寸,並且可防止一基板2朝外側隆起,可抑制因電解液11之層之厚度變厚所導致之入射光之損失增大,並且可防止因電子之移動距離增長所導致之氧化還原反應之降低。 Therefore, in this embodiment, as in the case of the first embodiment, the following effects can be obtained: the thickness of the internal space S of the layer forming the electrolytic solution 11 can be reduced as much as possible, and a substrate 2 can be prevented from facing outward. The bulge can suppress the increase of the loss of incident light caused by the thickness of the layer of the electrolytic solution 11 and can prevent the reduction of the redox reaction caused by the increase of the moving distance of the electrons.

又,根據本實施形態,可容易地製造略微彎曲之一基板2至第1電極5,因此可抑制太陽電池1B之製造成本,且可獲得入射光之損失較小及氧化還原反應之效率良好之太陽電池1B或將太陽電池1B串聯連接或並聯連接而成之電氣模組。 In addition, according to this embodiment, it is possible to easily manufacture the slightly curved substrate 2 to the first electrode 5, so that the manufacturing cost of the solar cell 1B can be suppressed, and the loss of incident light and the efficiency of the redox reaction are good. Solar cell 1B or an electrical module in which solar cells 1B are connected in series or in parallel.

再者,於上述第1實施形態及第2實施形態中,設為將一基板2彎折而形成凸部17或使基板2彎曲之構成,但亦可為使另一基板6彎折或彎曲之構成。進而,亦可使一基板2及另一基板6之兩者彎折或彎曲並以互相朝另一基板6或一基板2突出之方式進行貼合而製成太陽電池1C(參照圖10(b))。於使一基板2及另一基板6之兩者彎折或彎曲並以互相朝另一基板6或一基板2突出之方式貼合之情形時,可獲得如下效果,即:可將內部空間S之厚度設定為儘可能較小,並且可防止一基板2與另一基板6之兩者之彎曲。 Furthermore, in the above-mentioned first and second embodiments, a configuration is adopted in which one substrate 2 is bent to form the convex portion 17 or the substrate 2 is bent. However, the other substrate 6 may be bent or bent. Of the composition. Furthermore, both the one substrate 2 and the other substrate 6 can be bent or bent and bonded to each other so as to protrude toward the other substrate 6 or the one substrate 2 to produce a solar cell 1C (see FIG. 10 (b )). In the case where both the one substrate 2 and the other substrate 6 are bent or bent, and are attached in such a manner as to protrude toward the other substrate 6 or the one substrate 2, the following effect can be obtained, that is, the internal space S can be The thickness is set as small as possible, and bending of both the one substrate 2 and the other substrate 6 can be prevented.

繼而使用圖12、圖13對本發明之第3實施形態進行說明。於本實施形態中對與第1實施形態相同之構成標註相同符號並省略其說明,僅對與第1實施形態之不同點進行說明。 Next, a third embodiment of the present invention will be described using FIG. 12 and FIG. 13. In this embodiment, the same components as those in the first embodiment are denoted by the same reference numerals and descriptions thereof are omitted, and only differences from the first embodiment will be described.

於本實施形態中,如圖12所示,將一基板2之外周壁部2p與另一基板 6之外周壁部6p之間接著之密封材10於與外周壁部2p之內側對向之角部50處倒角,除此以外,以與第1實施形態相同之方式構成、製造。 In this embodiment, as shown in FIG. 12, the outer peripheral wall portion 2p of one substrate 2 and the other substrate The sealing material 10 adjoining between the outer peripheral wall portions 6p is chamfered at a corner 50 facing the inner side of the outer peripheral wall portion 2p, and is constructed and manufactured in the same manner as in the first embodiment.

於光電轉換元件1D中,包圍內部空間S之密封材10之內側被製成密封材10之由假想線所表示之角部50被倒角並朝內部空間S下降之傾斜面51。 In the photoelectric conversion element 1D, the inside of the sealing material 10 surrounding the internal space S is formed as an inclined surface 51 of a corner portion 50 of the sealing material 10 indicated by an imaginary line that is chamfered and descends toward the internal space S.

藉由該構成,可使一基板2之側壁部15之傾斜角度平緩。因此,可獲得如下效果,即:可防止因以陡峭之角度使一基板2彎折而導致於透明導電膜3產生損傷或破裂,從而可製成高品質之光電轉換元件1D。又,可獲得如下效果,即:可防止因於加壓加工時密封材10之角部50破壞透明導電膜3,視情況亦會破壞氧化物半導體4之兩端部、觸媒層18而導致發電面積減少。 With this configuration, the inclination angle of the side wall portion 15 of one substrate 2 can be made gentle. Therefore, an effect can be obtained in that it is possible to prevent the transparent conductive film 3 from being damaged or broken due to bending a substrate 2 at a steep angle, so that a high-quality photoelectric conversion element 1D can be manufactured. In addition, it is possible to prevent the transparent conductive film 3 from being damaged by the corner portion 50 of the sealing material 10 during press processing, and may also cause damage to both ends of the oxide semiconductor 4 and the catalyst layer 18 due to circumstances. Reduced power generation area.

又,由於可沿著密封材10之倒角後之傾斜面51配置一基板2之側壁部15,故而於一基板2之側壁部15受到外力之情形時,可藉由密封材10之傾斜面51支持側壁部15。因此,光電轉換元件1D可獲得如下效果,即:於一基板2受到外力之情形時可藉由傾斜面51防止透明導電膜3受損。 In addition, since the side wall portion 15 of a substrate 2 can be arranged along the inclined surface 51 after the chamfering of the sealing material 10, when an external force is applied to the side wall portion 15 of a substrate 2, the inclined surface of the sealing material 10 can be used. 51Supporting the side wall portion 15. Therefore, the photoelectric conversion element 1D can obtain an effect that the transparent conductive film 3 can be prevented from being damaged by the inclined surface 51 when a substrate 2 is subjected to an external force.

又,進而,光電轉換元件1D於其製造時,可於密封材10之傾斜面51上對一基板2進行加壓加工。換言之,光電轉換元件1D由於可將倒角後之密封材10作為支持台進行加壓加工,故而可獲得如下效果,即:可防止一基板2之過度彎折,從而可防止透明導電膜3之破損。 Furthermore, when the photoelectric conversion element 1D is manufactured, a substrate 2 can be press-processed on the inclined surface 51 of the sealing material 10. In other words, since the photoelectric conversion element 1D can be press-processed by using the chamfered sealing material 10 as a support table, the following effects can be obtained: an excessive bending of a substrate 2 can be prevented, and a transparent conductive film 3 can be prevented. damaged.

尤其是如圖13所示,於使光電轉換元件1D連接複數個、即以卷對卷方式連續地生產電氣模組80之情形時,可獲得能將倒角後之密 封材10作為支持台而容易且生產效率良好地進行一基板2之加壓加工的效果。再者,圖13係表示藉由於透明導電膜3及對向導電膜7形成槽75而使其等相互絕緣,並經由導電材70使光電轉換元件1D、1D彼此串聯連接之情形作為電氣模組80之一例的圖。 In particular, as shown in FIG. 13, when a plurality of photoelectric conversion elements 1D are connected, that is, the electrical module 80 is continuously produced in a roll-to-roll manner, the density that can be chamfered can be obtained. The sealing material 10 has the effect of easily and pressurizing one substrate 2 as a support table with high production efficiency. 13 shows a case where the transparent conductive film 3 and the opposite conductive film 7 are formed with grooves 75 to insulate them from each other, and the photoelectric conversion elements 1D and 1D are connected in series to each other through the conductive material 70 as an electrical module. Figure of an example of 80.

以上,對本發明之第3實施形態進行了說明,但本發明之密封材10只要可將側壁部15之傾斜角度設定為平緩,則亦可以平滑地彎曲之方式進行倒角。又,亦可以藉由對密封材10進行倒角而產生之角部60不尖銳之方式進行倒角。 The third embodiment of the present invention has been described above, but the sealing material 10 of the present invention may be chamfered so as to be smoothly curved as long as the inclination angle of the side wall portion 15 can be set to be gentle. In addition, the corner portion 60 generated by chamfering the sealing material 10 may not be sharpened.

又,於本實施形態中,以僅一基板2被彎折之情形為例進行了說明,但於另一基板6以朝內部空間S突出之方式被彎折之情形時,密封材10之另一基板6側且內部空間S側之角亦可被倒角。又,如圖10(b)所示,於一基板2及另一基板6之兩者均朝內部空間S彎折之情形時,密封材10之一基板2側及另一基板6側之兩者亦可被倒角。 In this embodiment, the case where only one substrate 2 is bent is described as an example. However, when the other substrate 6 is bent so as to protrude toward the internal space S, the sealing material 10 is another The corners of one substrate 6 side and the internal space S side may also be chamfered. As shown in FIG. 10 (b), when both the one substrate 2 and the other substrate 6 are bent toward the internal space S, two of one of the substrate 2 side of the sealing material 10 and the other substrate 6 side It can also be chamfered.

以下,使用實施例對本發明具體地進行說明。 Hereinafter, the present invention will be specifically described using examples.

[實施例] [Example] [實施例1] [Example 1]

根據圖10(a)中模式性圖示之下述規格,製作與太陽電池1A相同之太陽電池。 A solar cell similar to the solar cell 1A was produced according to the following specifications schematically shown in FIG. 10 (a).

<第1電極5> <First electrode 5>

對厚度125μm之PEN膜進行壓紋加工,形成圖10(a)所示之L1之高度尺寸為30μm之凸部17。利用濺鍍法於形成有PEN膜之凸部17之側之板面形成氧化銦錫(ITO)作為透明導電膜,並以成為16×54mm之方式 裁剪該膜。利用敷料器以成為10×50mm見方之方式將TiO2漿料塗佈於ITO上,並於120℃進行加熱而使其硬化。其後,以色素濃度成為0.02~0.5mM之方式將有機色素溶解於溶劑中,並將基板於該溶液中浸漬10分鐘。利用乙醇清洗自溶液取出之基材並使其乾燥。 The PEN film having a thickness of 125 μm was embossed to form a convex portion 17 having a height dimension L1 of 30 μm as shown in FIG. 10 (a). Indium tin oxide (ITO) was formed as a transparent conductive film on the plate surface on the side of the convex portion 17 where the PEN film was formed by a sputtering method, and the film was cut so as to be 16 × 54 mm. The TiO 2 slurry was applied onto the ITO with an applicator so as to be 10 × 50 mm square, and heated at 120 ° C. to harden it. Thereafter, the organic pigment was dissolved in a solvent so that the pigment concentration became 0.02 to 0.5 mM, and the substrate was immersed in the solution for 10 minutes. The substrate taken out of the solution was washed with ethanol and dried.

<第2電極8> <Second electrode 8>

利用濺鍍法於厚度125μm之PEN膜上形成氧化銦錫(ITO)作為對向導電膜。以成為16×54mm之方式裁剪PEN膜。於ITO上將碳塗佈成10×50mm並於120℃加熱而使其硬化。 Indium tin oxide (ITO) was formed on the PEN film with a thickness of 125 μm as a conductive film by sputtering. The PEN film was cut so as to be 16 × 54 mm. Carbon was coated on ITO to 10 × 50 mm and heated at 120 ° C. to harden it.

<密封材10> <Sealing material 10>

於熱熔樹脂形成一開口部,並使熱熔樹脂不接觸半導體層4。以可密封內部空間S之方式將尺寸設為厚度60μm、14×54mm。 An opening is formed in the hot-melt resin so that the hot-melt resin does not contact the semiconductor layer 4. The dimensions were set to be 60 μm and 14 × 54 mm so that the internal space S could be sealed.

<分隔件9> <Divider 9>

關於分隔件9(廣瀨製紙製造),將電流提取配線部位以外設為覆蓋ITO以上之尺寸,設為厚度20μm、15×55mm。 Regarding the separator 9 (manufactured by Hirose Paper Co., Ltd.), the area other than the current extraction wiring portion is set to a size that covers ITO or more, and the thickness is 20 μm and 15 × 55 mm.

將以上述方式獲得之第1電極5與第2電極8以TiO2層4與碳層18相對向之方式進行配置,並依序積層第1電極5-熱熔樹脂10-分隔件9-熱熔樹脂10-脫模性樹脂片材(Naflon片材)-第2電極8,於120℃一面施加壓力一面進行熱壓而貼合。 The first electrode 5 and the second electrode 8 obtained in the above manner are arranged so that the TiO 2 layer 4 and the carbon layer 18 face each other, and the first electrode 5-the hot-melt resin 10-the separator 9- The molten resin 10-the mold-releasing resin sheet (Naflon sheet)-the second electrode 8 was hot-pressed and bonded at 120 ° C while applying pressure.

將配置於第1電極5與第2電極8之間之脫模性樹脂片材抽出而形成注液孔21(參照圖7),將貼合後之第1電極5及第2電極8安裝並固定於摺疊機,使注液孔21浸漬於電解液11並進行乾燥器之抽真空,於抽至100Pa為止後大氣開放而將電解液11注入至第1電極5與第2電極8 之間。由於電解液11會附著於注液孔21周邊,因此利用溶劑(乙醇)擦拭並清洗。 The release resin sheet disposed between the first electrode 5 and the second electrode 8 is drawn out to form a liquid injection hole 21 (see FIG. 7), and the first electrode 5 and the second electrode 8 after bonding are mounted and Fix it in a folding machine, immerse the injection hole 21 in the electrolyte 11 and vacuum the dryer. After the pumping pressure reaches 100 Pa, the atmosphere is opened to inject the electrolyte 11 into the first electrode 5 and the second electrode 8 between. Since the electrolytic solution 11 adheres to the periphery of the injection hole 21, it is wiped and washed with a solvent (ethanol).

其後,藉由將注液孔21熱壓而進行密封。如此製作太陽電池1A。 Thereafter, the liquid injection hole 21 is sealed by hot pressing. In this way, a solar cell 1A was produced.

針對上述太陽電池1A,利用測微計對圖10(a)所示之凸部17之厚度尺寸(即,形成有凸部17之區域之相互對向之PEN膜之外側之板面間之尺寸)M1與密封材10之厚度尺寸(即,配置有密封材10之部位之相互對向之PEN膜之外側之板面間之尺寸)N1進行測量,結果如表1所示。又,利用模擬太陽光對上述太陽電池1A之發電性能進行確認,結果如表2所示。 For the above-mentioned solar cell 1A, a micrometer was used to measure the thickness of the convex portion 17 shown in FIG. 10 (a) (that is, the size between the plate surfaces on the outside of the PEN film facing each other in the area where the convex portion 17 is formed). ) The thickness dimension of M1 and the sealing material 10 (that is, the dimension between the plate surfaces on the outside of the PEN film facing each other at the portion where the sealing material 10 is arranged) N1 was measured, and the results are shown in Table 1. The power generation performance of the solar cell 1A was confirmed using simulated sunlight. The results are shown in Table 2.

[實施例2] [Example 2]

根據圖10(b)中模式性圖示之下述規格,製作太陽電池1C。 A solar cell 1C was produced according to the following specifications schematically shown in FIG. 10 (b).

<第1電極5> <First electrode 5>

形成與實施例1相同之第1電極5。 A first electrode 5 similar to that of the first embodiment is formed.

<第2電極8> <Second electrode 8>

於PEN膜形成以與第1電極5相同之高度尺寸突出之凸部17,並且於形成有凸部17之側之板面利用濺鍍法形成氧化銦錫(ITO)作為對向導電膜,除此以外,形成與實施例1相同之第2電極8。 On the PEN film, a convex portion 17 protruding with the same height dimension as that of the first electrode 5 is formed, and indium tin oxide (ITO) is formed on the plate surface on the side where the convex portion 17 is formed as a counter conductive film by sputtering. Otherwise, a second electrode 8 similar to that of the first embodiment is formed.

<密封材10> <Sealing material 10>

準備與實施例1相同之密封材10。 The same sealing material 10 as in Example 1 was prepared.

<分隔件9> <Divider 9>

準備與實施例1相同之分隔件9。 A spacer 9 similar to that in Example 1 was prepared.

將以上述方式而獲得之第1電極5與第2電極8以TiO2層4與碳層18相對向之方式進行配置,並依序積層第1電極5-熱熔樹脂10- 分隔件9-熱熔樹脂10-脫模性樹脂片材(Naflon片材)-第2電極8,於120℃一邊施加壓力一邊進行熱壓。 The first electrode 5 and the second electrode 8 obtained in the above manner are arranged so that the TiO 2 layer 4 and the carbon layer 18 face each other, and the first electrode 5-the hot-melt resin 10-the separator 9-are sequentially laminated. Hot-melt resin 10-Releasable resin sheet (Naflon sheet) -Second electrode 8 was hot-pressed while applying pressure at 120 ° C.

將位於第1電極5與第2電極8之間之脫模性樹脂片材抽出而形成注液孔21(參照圖7),並將使第1電極5與第2電極8貼合後之接合體1a安裝並固定於摺疊機,於使注液孔21浸漬於電解液11之狀態下進行乾燥器之抽真空,並於抽至100Pa為止之後大氣開放而將電解液11注入至內部空間S。其後,藉由熱壓注液孔21而進行密封。 The release resin sheet located between the first electrode 5 and the second electrode 8 is drawn out to form a liquid injection hole 21 (see FIG. 7), and the first electrode 5 and the second electrode 8 are bonded to each other and joined. The body 1a is installed and fixed to a folding machine, and the dryer is evacuated under the state that the injection hole 21 is immersed in the electrolyte 11 and the atmosphere is opened to inject the electrolyte 11 into the internal space S after being evacuated to 100 Pa. Thereafter, sealing is performed by hot-pressing the liquid injection hole 21.

由於電解液會附著於注液孔21周邊,因此利用溶劑(乙醇)擦拭並清洗。如此製作太陽電池1C。 Since the electrolytic solution adheres to the periphery of the injection hole 21, it is wiped with a solvent (ethanol) and washed. In this way, a solar cell 1C was produced.

針對上述太陽電池1C,利用測微計對圖10(b)所示之凸部17之厚度尺寸M2與密封材10厚度尺寸N2進行測量,結果如表1所示。又,利用模擬太陽光對上述太陽電池之發電性能進行確認,結果如表2所示。 For the above-mentioned solar cell 1C, the thickness dimension M2 of the convex portion 17 and the thickness dimension N2 of the sealing material 10 shown in FIG. 10 (b) were measured with a micrometer, and the results are shown in Table 1. Moreover, the power generation performance of the above-mentioned solar cells was confirmed using simulated sunlight, and the results are shown in Table 2.

[實施例3] [Example 3]

根據圖10(c)中模式性圖示之下述規格,製作太陽電池1B。 A solar cell 1B was produced according to the following specifications schematically shown in FIG. 10 (c).

<第1電極5> <First electrode 5>

使由氧化物半導體構成之微粒子等分散於氮氣,並自噴嘴使由氧化物半導體構成之微粒子朝PEN膜之板面高速噴射而成膜。此時對PEN膜施加張力而使其伸長,並於使氧化物半導體粒子成膜後解除張力,藉此使與成膜有由氧化物半導體構成之微粒子之側為相反側之板面收縮而彎曲,從而使PEN膜以朝成膜有由氧化物半導體構成之微粒子之板面側突出之方式彎曲。其後,裁剪為16×54mm之尺寸而獲得第1電極5。 The fine particles made of the oxide semiconductor are dispersed in nitrogen, and the fine particles made of the oxide semiconductor are sprayed from the nozzle at a high speed toward the surface of the PEN film to form a film. At this time, tension is applied to the PEN film to extend it, and the tension is released after the oxide semiconductor particles are formed, thereby shrinking and bending the plate surface on the side opposite to the side where the fine particles composed of the oxide semiconductor are formed. Thus, the PEN film is bent so as to protrude toward the plate surface side on which the fine particles composed of the oxide semiconductor are formed. Thereafter, it was cut into a size of 16 × 54 mm to obtain a first electrode 5.

<第2電極8> <Second electrode 8>

於ITO上將PEDOT成膜為膜厚35nm作為對向電極。並以成為16×54mm之方式裁剪成膜後之ITO-PEN膜而獲得第2電極8。 PEDOT was formed on ITO to a thickness of 35 nm as a counter electrode. The ITO-PEN film was cut into a film of 16 × 54 mm to obtain a second electrode 8.

<密封材10> <Sealing material 10>

將熱硬化樹脂裁剪為短條狀,獲得厚度100μm、3×14mm與厚度100μm、3×54mm之2種。將該2種熱硬化樹脂於第1電極5之外周配置成矩形,並以半導體層4與密封材10之距離成為1mm以下之間隙之方式配置熱硬化樹脂。 The thermosetting resin was cut into short strips to obtain two types of thickness: 100 μm, 3 × 14 mm and thickness: 100 μm, 3 × 54 mm. The two types of thermosetting resins are arranged in a rectangular shape on the outer periphery of the first electrode 5, and the thermosetting resins are arranged so that the distance between the semiconductor layer 4 and the sealing material 10 becomes 1 mm or less.

再者,於本實施例中未使用分隔件,但即便存在PEDOT層與TiO2層接觸之情況,觸媒層18與透明導電膜3亦難以接觸,故而不會短路。 Moreover, in this embodiment, a separator is not used, but even if the PEDOT layer is in contact with the TiO 2 layer, the catalyst layer 18 and the transparent conductive film 3 are difficult to contact, so there is no short circuit.

於將電解液11滴加至以上述方式獲得之第1電極5之成膜上之後,將第1電極5與第2電極8以TiO2層與PEDOT層相對向之方式進行配置,並一面將第1電極5與第2電極8積層化一面進行熱層壓。如此製作太陽電池1B。 After the electrolytic solution 11 was dropped on the film formation of the first electrode 5 obtained in the above manner, the first electrode 5 and the second electrode 8 were arranged so that the TiO 2 layer and the PEDOT layer faced each other, and The first electrode 5 and the second electrode 8 are laminated with each other and then thermally laminated. In this way, the solar cell 1B was produced.

針對上述太陽電池1B,利用測微計對圖10(c)所示之凸部17之厚度尺寸M3與密封材10厚度尺寸N3進行測量,結果如表1所示。 For the above-mentioned solar cell 1B, the thickness dimension M3 of the convex portion 17 and the thickness dimension N3 of the sealing material 10 shown in FIG. 10 (c) were measured with a micrometer, and the results are shown in Table 1.

又,利用模擬太陽光對上述太陽電池1B之發電性能進行確認,結果如表2所示。 The power generation performance of the solar cell 1B was confirmed using simulated sunlight. The results are shown in Table 2.

[比較例1] [Comparative Example 1]

根據圖11中模式性圖示之下述規格,製作太陽電池100。 The solar cell 100 was manufactured according to the following specifications schematically shown in FIG. 11.

<第1電極> <First electrode>

於被裁剪為16×54mm之尺寸之PEN膜上未形成凹凸加工而製成平板面,除此以外,形成與實施例1相同之第1電極。 A first electrode was formed in the same manner as in Example 1 except that a flat surface was formed on the PEN film cut to a size of 16 × 54 mm without forming unevenness.

<第2電極> <Second electrode>

形成與實施例1相同之第2電極。 A second electrode was formed in the same manner as in Example 1.

<密封材> <Sealing material>

準備與實施例1相同之密封材。 The same sealing material as in Example 1 was prepared.

<分隔件9> <Divider 9>

準備與實施例1相同之分隔件。 The same spacer as in Example 1 was prepared.

將以上述方式獲得之第1電極5與第2電極8以TiO2層4與碳層18相對向之方式進行配置,並依序積層第1電極5-熱熔樹脂10-分隔件9-熱熔樹脂10-脫模性樹脂片材(Naflon片材)-第2電極8,於120℃一面施加壓力一面進行熱壓。 The first electrode 5 and the second electrode 8 obtained in the above manner are arranged so that the TiO 2 layer 4 and the carbon layer 18 face each other, and the first electrode 5-the hot-melt resin 10-the separator 9- Molten resin 10-Releasable resin sheet (Naflon sheet) -Second electrode 8 was hot-pressed while applying pressure at 120 ° C.

將配置於第1電極5與第2電極8之間之脫模性樹脂片材抽出,並將貼合後之第1電極5及第2電極8安裝並固定於摺疊機,使注液孔浸漬於電解液11並進行抽真空,於抽至100Pa為止之後大氣開放而將電解液11注入至第1電極5與第2電極8之間。其後,藉由熱壓注液孔而進行密封。如此製作太陽電池100。 The mold release resin sheet placed between the first electrode 5 and the second electrode 8 is pulled out, and the first electrode 5 and the second electrode 8 after bonding are mounted and fixed to a folding machine, and the liquid injection hole is immersed The electrolytic solution 11 was evacuated, and the atmosphere was opened after 100 Pa was evacuated to inject the electrolytic solution 11 between the first electrode 5 and the second electrode 8. Thereafter, sealing is performed by hot-pressing the injection hole. In this way, the solar cell 100 was manufactured.

針對上述太陽雷池100,利用測微計對密封材10之內側之厚度尺寸M4與密封材10之厚度尺寸N4進行測量,結果如表1所示。又,利用模擬太陽光對太陽電池之發電性能進行確認,結果如表2所示。 For the above-mentioned solar mine 100, a micrometer was used to measure the thickness dimension M4 inside the sealing material 10 and the thickness dimension N4 of the sealing material 10, and the results are shown in Table 1. In addition, the simulated solar light was used to confirm the power generation performance of solar cells. The results are shown in Table 2.

[評價結果] [Evaluation results]

實施例1、2、3之厚度尺寸M1~M3分別顯示出低於比較例1之厚度尺寸M4之值。又,實施例1、2、3之發電性能顯示出高於比較例1之發電性能之值。據此,確認如下情況:藉由降低凸部17之厚度尺寸,與習知之太陽電池100相比,可提高太陽電池1A~1C之發電性能。 The thickness dimensions M1 to M3 of Examples 1, 2, and 3 show values that are lower than the thickness dimension M4 of Comparative Example 1, respectively. In addition, the power generation performance of Examples 1, 2, and 3 showed higher values than the power generation performance of Comparative Example 1. Based on this, it was confirmed that, by reducing the thickness of the convex portion 17, the power generation performance of the solar cells 1A to 1C can be improved compared with the conventional solar cell 100.

又,製作10次實施例1、2、3及比較例1之各自規格之太陽電池,結果實施例1、2、3之厚度尺寸M1~M3及發電性能均為±5%以下之偏差,相對於此,比較例1之厚度尺寸M4及發電性能均產生±10%以上之偏差。 In addition, the solar cells of the respective specifications of Examples 1, 2, 3, and Comparative Example 1 were produced 10 times. As a result, the thickness dimensions M1 to M3 and the power generation performance of Examples 1, 2, and 3 all had deviations of ± 5% or less. Here, both the thickness dimension M4 and the power generation performance of Comparative Example 1 have a deviation of ± 10% or more.

據此可知,實施例1、2、3之構造之情形時較比較例1之構造之情形時更容易使填充了電解液11後之厚度尺寸M1~M3均勻化。 From this, it can be seen that the thicknesses M1 to M3 after the electrolyte solution 11 is filled are more uniform in the case of the structures of Examples 1, 2, and 3 than in the case of the structure of Comparative Example 1.

即,根據本發明可知,可將於太陽電池100之作製中已作為問題之第2電極8-第1電極5之間之距離儘可能固定。而且,可知藉由使第2電極8-第1電極5之間之距離儘可能固定,可使太陽電池1A~1C之發電性能穩定化。 That is, according to the present invention, it can be seen that the distance between the second electrode 8 to the first electrode 5 which has been a problem in the production of the solar cell 100 can be fixed as much as possible. In addition, it was found that by making the distance between the second electrode 8 to the first electrode 5 as constant as possible, the power generation performance of the solar cells 1A to 1C can be stabilized.

Claims (11)

一種光電轉換元件,具備:第1電極,其於一基板之板面形成有透明導電膜,於該透明導電膜之表面形成有半導體層;第2電極,其於與該一基板隔開間隔地對向配置之另一基板之板面,以與該透明導電膜對向之方式,形成有對向導電膜;及電解質,其被密封於該等第1電極與第2電極之間;至少該一基板,於密封該電解質之外周壁部之內側彎曲,並朝對向配置之該另一基板突出;該一基板之彎曲面的曲率係以0.01以上0.1以下之範圍形成。A photoelectric conversion element includes a first electrode having a transparent conductive film formed on a surface of a substrate, a semiconductor layer formed on the surface of the transparent conductive film, and a second electrode spaced apart from the one substrate. An opposing conductive film is formed on the plate surface of the other substrate disposed opposite to the transparent conductive film, and an electrolyte is sealed between the first electrode and the second electrode; at least the A substrate is bent inside the outer peripheral wall portion that seals the electrolyte and protrudes toward the other substrate disposed oppositely; the curvature of the curved surface of the one substrate is formed in a range of 0.01 to 0.1. 如申請專利範圍第1項之光電轉換元件,其中,該一基板或該另一基板中的至少一者,係由樹脂膜形成。For example, the photoelectric conversion element according to the first patent application scope, wherein at least one of the one substrate or the other substrate is formed of a resin film. 如申請專利範圍第1項之光電轉換元件,其中,該一基板之該外周壁部與該另一基板之該外周壁部之間,係藉由密封材接著,該密封材之與該彎曲之外周壁部內側對向的角部被倒角。For example, the photoelectric conversion element of the scope of application for a patent, wherein the peripheral wall portion of the one substrate and the peripheral wall portion of the other substrate are connected by a sealing material, and the sealing material and the curved portion Corner portions facing the inside of the outer peripheral wall portion are chamfered. 如申請專利範圍第3項之光電轉換元件,其中,該密封材係沿著該外周壁部內側之彎曲的形狀而被倒角。For example, in the photoelectric conversion element according to claim 3, the sealing material is chamfered along a curved shape inside the outer peripheral wall portion. 一種電氣模組,其具備複數個申請專利範圍第1至4項中任一項之光電轉換元件。An electrical module includes a plurality of photoelectric conversion elements according to any one of claims 1 to 4 of a patent application. 一種光電轉換元件之製造方法,其係如下光電轉換元件之製造方法,該光電轉換元件具備:第1電極:於一基板之板面形成有透明導電膜,於該透明導電膜之表面形成有半導體層,第2電極:於與該一基板隔開間隔地對向配置之另一基板之板面,以與該透明導電膜對向之方式,形成有對向導電膜,及電解質:被密封於該等第1電極與第2電極之間;至少該一基板,於密封該電解質之外周壁部之內側彎曲,並朝對向配置之該另一基板突出;其中,形成該半導體層並對該一基板賦予壓縮內部應力而使該一基板彎曲。A method for manufacturing a photoelectric conversion element is as follows. The photoelectric conversion element includes: a first electrode: a transparent conductive film is formed on a surface of a substrate; and a semiconductor is formed on the surface of the transparent conductive film. Layer, second electrode: an opposite conductive film is formed on a surface of another substrate disposed opposite to the one substrate at a distance from the first substrate, and an opposite conductive film is formed so as to oppose the transparent conductive film, and an electrolyte is sealed in Between the first electrodes and the second electrodes; at least the one substrate is bent inside the outer peripheral wall portion sealing the electrolyte, and protrudes toward the other substrate arranged oppositely; wherein the semiconductor layer is formed and the A substrate imparts compressive internal stress to bend the substrate. 如申請專利範圍第6項之光電轉換元件之製造方法,其中,該半導體層係藉由氣溶膠沈積法而形成。For example, the method for manufacturing a photoelectric conversion element according to item 6 of the application, wherein the semiconductor layer is formed by an aerosol deposition method. 一種光電轉換元件,具備:第1電極:於一基板之板面形成有透明導電膜,於該透明導電膜之表面形成有半導體層,第2電極:於與該一基板隔開間隔地對向配置之另一基板之板面,以與該透明導電膜對向之方式,形成有對向導電膜,及電解質:被密封於該等第1電極與第2電極之間;至少該一基板,於密封該電解質之外周壁部之內側彎折,並朝對向配置之該另一基板突出。A photoelectric conversion element includes: a first electrode: a transparent conductive film is formed on a surface of a substrate; a semiconductor layer is formed on the surface of the transparent conductive film; and a second electrode: is opposed to the substrate with a space therebetween. An opposite conductive film is formed on the plate surface of the other substrate, and an opposite conductive film is formed, and an electrolyte is sealed between the first electrode and the second electrode; at least the one substrate, It is bent inside the outer peripheral wall part that seals the electrolyte, and protrudes toward the other substrate disposed oppositely. 如申請專利範圍第8項之光電轉換元件,其中,至少該一基板具備:側壁部:於密封該電解質之外周壁部之內側朝該對向配置之該另一基板彎折並沿著該外周壁部而形成,及內側壁部:形成於該側壁部之前端之內側;該側壁部相對於該外周壁部傾斜。For example, the photoelectric conversion element in the eighth aspect of the patent application, wherein at least one of the substrates includes: a side wall portion: inside the peripheral wall portion that seals the electrolyte, is bent toward the other substrate disposed in the opposite direction and is bent along the outer periphery; A wall portion is formed, and an inner side wall portion is formed inside the front end of the side wall portion; the side wall portion is inclined with respect to the outer peripheral wall portion. 如申請專利範圍第1項之光電轉換元件,其中,於第1電極與第2電極之間設有分隔件。For example, the photoelectric conversion element according to the first scope of the patent application, wherein a separator is provided between the first electrode and the second electrode. 如申請專利範圍第8項之光電轉換元件,其中,於第1電極與第2電極之間設有分隔件。For example, the photoelectric conversion element in the eighth aspect of the patent application, wherein a separator is provided between the first electrode and the second electrode.
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