TWI625314B - Scribing tool, manufacturing method of scribing tool, and forming method of scribing tool - Google Patents
Scribing tool, manufacturing method of scribing tool, and forming method of scribing tool Download PDFInfo
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- TWI625314B TWI625314B TW103124446A TW103124446A TWI625314B TW I625314 B TWI625314 B TW I625314B TW 103124446 A TW103124446 A TW 103124446A TW 103124446 A TW103124446 A TW 103124446A TW I625314 B TWI625314 B TW I625314B
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/10—Glass-cutting tools, e.g. scoring tools
- C03B33/105—Details of cutting or scoring means, e.g. tips
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
- C03B33/033—Apparatus for opening score lines in glass sheets
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Organic Chemistry (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
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Abstract
本發明係更確實地形成用於形成劃線之起點裂痕。 The present invention more reliably forms a starting crack for forming a scribing line.
劃線工具包含柄、及安裝於柄上之金剛石粒51。於金剛石粒51設有具有端之脊線EL。金剛石粒51包含第1部分P1及第2部分P2。第1部分P1具有設於脊線EL之端之第1突起D1、及自第1突起D1沿脊線EL延伸之第1直線部L1。於第2部分P2設有連於第1直線部L1而配置於脊線EL上之凹部RA。於第1部分P1及第2部分P2之間,第1直線部L1與凹部RA相合而構成第2突起D2。 The scribing tool includes a shank and diamond particles 51 mounted on the shank. The diamond grains 51 are provided with ridge lines EL having ends. The diamond grain 51 includes a first portion P1 and a second portion P2. The first portion P1 includes a first protrusion D1 provided at an end of the ridgeline EL and a first straight portion L1 extending from the first protrusion D1 along the ridgeline EL. The second portion P2 is provided with a recessed portion RA connected to the first straight portion L1 and disposed on the ridgeline EL. Between the first portion P1 and the second portion P2, the first linear portion L1 and the concave portion RA meet to form a second protrusion D2.
Description
本發明係關於一種劃線工具、劃線工具之製造方法及劃線之形成方法,尤其係關於一種使用金剛石粒之劃線工具、劃線工具之製造方法及劃線之形成方法。 The present invention relates to a scribing tool, a method for manufacturing the scribing tool, and a method for forming a scribing method, and particularly to a scribing tool using diamond grains, a method for manufacturing a scribing tool, and a method for forming a scribing tool.
於製造平板顯示面板或太陽電池面板等電氣設備時,常常需要切斷例如玻璃板、半導體晶圓、藍寶石晶圓或陶瓷板等由脆性材料製作之基板。此時,經常會利用劃線裝置於基板上進行劃線。即,於基板表面形成劃線。劃線係指向基板厚度方向至少局部行進之裂痕於基板表面上呈線狀延伸。 When manufacturing electrical devices such as flat panel display panels or solar cell panels, it is often necessary to cut off substrates made of brittle materials such as glass plates, semiconductor wafers, sapphire wafers, or ceramic plates. At this time, scribing is often performed on a substrate using a scribing device. That is, a scribe line is formed on the substrate surface. The scribe lines extend in a linear manner on the surface of the substrate.
當裂痕於厚度方向完全行進時,僅藉由劃線形成便能沿劃線將基板完全切斷。當裂痕僅於厚度方向部分行進時,於劃線形成後要進行被稱為分斷步驟之應力賦予。藉由分斷步驟使裂痕向厚度方向完全行進,從而沿劃線將基板完全切斷。 When the crack is completely advanced in the thickness direction, the substrate can be completely cut along the scribe line only by the scribe line formation. When the crack progresses only in the thickness direction, a stress called a breaking step is performed after the scribe line is formed. The crack is completely advanced in the thickness direction by the breaking step, so that the substrate is completely cut along the scribe line.
廣泛用作形成劃線之劃線工具,有金剛石劃線工具。例如根據日本專利特開2011-219308號公報(專利文獻1),金剛石劃線工具包含合成金剛石研磨粒、及保持該合成金剛石研磨粒之柄。合成金剛石研磨粒具有(100)面與鄰接之2面之(111)面之交點作為石尖(point)。 Widely used as a scribing tool for forming scribing tools, there are diamond scribing tools. For example, according to Japanese Patent Application Laid-Open No. 2011-219308 (Patent Document 1), a diamond scribing tool includes synthetic diamond abrasive grains, and a handle holding the synthetic diamond abrasive grains. The synthetic diamond abrasive grains have the intersection of the (100) plane and the (111) plane of two adjacent planes as a point.
[專利文獻1]日本專利特開2011-219308號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2011-219308
為了形成劃線,首先需要產生成為其開端之朝向基板內部之龜裂(以下稱為起點裂痕)。一旦形成了起點裂痕,便能自起點裂痕開始使劃線於基板上容易地伸展。相反,未形成起點裂痕時,即便於基板上猛拉劃線工具,僅係於基板上造成損傷。若僅有該損傷,於上述分斷步驟中即便賦予應力亦無法切斷基板,此種構成並不相當於本說明書中之“劃線”。 In order to form a scribing line, it is necessary to first generate a crack (hereinafter referred to as a starting point crack) which is the beginning of the substrate and faces the inside of the substrate. Once the starting crack is formed, the scribe line can be easily stretched on the substrate from the starting crack. On the contrary, when the starting point crack is not formed, even if the scribing tool is pulled sharply on the substrate, the damage is caused only on the substrate. If there is only such damage, the substrate cannot be cut even if stress is applied in the above-mentioned breaking step, and such a structure does not correspond to the "scribe line" in this specification.
起點裂痕尤其容易形成於基板端緣。原因係利用劃線工具於端緣對端面造成損傷時,尤其容易產生朝向基板內部之龜裂。然而,有儘管處於端緣上但損傷不充分而無法形成起點裂痕之情形。換言之,形成起點裂痕之步驟之良率並非100%。藉此,期望有一種能更確實地形成起點裂痕之方法。 The starting crack is particularly easy to form at the edge of the substrate. The reason is that when using a scribing tool to damage the end surface at the end edge, cracks toward the inside of the substrate are particularly likely to occur. However, there are cases where the damage is not sufficient to form a crack at the starting point despite being on the edge. In other words, the yield of the crack formation step is not 100%. Accordingly, a method for more reliably forming a crack at the starting point is desired.
本發明係為了解決如上所述之問題研究而成者,其目的在於提供一種能夠更確實地形成用於形成劃線之起點裂痕之劃線工具、劃線工具之製造方法及劃線之形成方法。 The present invention has been made in order to solve the problems described above, and an object thereof is to provide a scribing tool capable of more reliably forming a starting crack for forming a scribing line, a method for manufacturing the scribing tool, and a method for forming a scribing line. .
本發明之劃線工具包含柄、及安裝於柄之金剛石粒。金剛石粒上設有具有端之脊線。金剛石粒包含第1及第2部分。第1部分具有設於脊線之端之第1突起、及自第1突起沿脊線延伸之第1直線部。於第2部分設有連接第1直線部而配置於脊線上之凹部。於第1及第2部分之間,第1直線部及凹部相合而構成第2突起。 The scribing tool of the present invention includes a shank and diamond grains mounted on the shank. The diamond grains are provided with ridges having ends. The diamond grain contains the first and second parts. The first portion includes a first protrusion provided at an end of the ridgeline, and a first linear portion extending from the first protrusion along the ridgeline. In the second portion, a recessed portion connected to the first straight portion and disposed on the ridge line is provided. Between the first and second portions, the first linear portion and the concave portion meet to form a second protrusion.
較佳為,金剛石粒進而包含第3部分,該第3部分具有自凹部沿脊線延伸之第2直線部。第1及第2直線部位於一假想直線上。 Preferably, the diamond particles further include a third portion having a second straight portion extending from the concave portion along the ridge line. The first and second straight portions are located on an imaginary straight line.
較佳為,第1直線部具有超過30μm且小於100μm之長度。較佳為,凹部沿脊線而具有超過30μm且小於100μm之長度。較佳為,凹部 具有超過10μm且小於50μm之深度。 Preferably, the first straight portion has a length of more than 30 μm and less than 100 μm. It is preferable that the recessed portion has a length of more than 30 μm and less than 100 μm along the ridge line. Preferably, the recess It has a depth of more than 10 μm and less than 50 μm.
本發明之劃線工具之製造方法包含以下步驟。準備設有脊線之金剛石粒,該脊線具有設有突起之端。於與突起隔開之位置向金剛石粒照射與脊線交叉之雷射光,藉此於脊線上形成凹部。 The method for manufacturing a scribing tool of the present invention includes the following steps. Diamond grains are prepared which are provided with a ridge line having a protruding end. The diamond particles are irradiated with laser light crossing the ridgeline at a position spaced from the protrusion, thereby forming a recess on the ridgeline.
本發明之劃線之形成方法係於設有具有端緣之主面之基板上形成劃線之劃線方法,且包含以下步驟(1)~(3)。 The scribing method of the present invention is a scribing method for forming a scribing method on a substrate provided with a main surface having an end edge, and includes the following steps (1) to (3).
(1)準備設有具有端之脊線之金剛石粒。金剛石粒包含第1及第2部分。第1部分具有設於脊線之端之第1突起、及自第1突起沿脊線延伸之第1直線部。於第2部分設有連接第1直線部而配置於脊線上之凹部。於第1及第2部分之間,第1直線部及凹部相合而構成第2突起。 (1) A diamond grain having a ridge line having an end is prepared. The diamond grain contains the first and second parts. The first portion includes a first protrusion provided at an end of the ridgeline, and a first linear portion extending from the first protrusion along the ridgeline. In the second portion, a recessed portion connected to the first straight portion and disposed on the ridge line is provided. Between the first and second portions, the first linear portion and the concave portion meet to form a second protrusion.
(2)於基板之主面端緣形成初始龜裂。形成初始龜裂之步驟包含:使金剛石粒之凹部卡於端緣之步驟;及利用第2突起刮過卡於凹部之端緣之步驟。 (2) An initial crack is formed at the edge of the main surface of the substrate. The step of forming the initial crack includes a step of causing the concave portion of the diamond grain to be caught on the edge; and a step of scraping the edge of the concave portion with the second protrusion.
(3)於主面上使金剛石粒之第1部分自初始龜裂開始移行,使得劃線伸展。 (3) The first part of the diamond grains is moved from the initial crack on the main surface so that the scribe line is extended.
上述劃線之形成方法中,較佳為金剛石粒進而包含第3部分,該第3部分具有自凹部沿脊線延伸之第2直線部。第1及第2直線部位於一假想直線上。形成初始龜裂之步驟於利用第2突起刮過卡於凹部之端緣之步驟之前,進而包含使基板之主面端緣於脊線上自第2直線部上滑入凹部中之步驟。 In the method for forming the scribe line, it is preferable that the diamond particles further include a third portion having a second straight portion extending from the concave portion along the ridge line. The first and second straight portions are located on an imaginary straight line. The step of forming the initial crack includes a step of sliding the end edge of the main surface of the substrate on the ridge line from the second straight portion into the recessed portion before the step of scraping the edge of the recessed portion with the second protrusion.
根據本發明,可更確實地形成用於形成劃線之起點裂痕。 According to the present invention, it is possible to more surely form a starting crack for forming a scribe line.
4‧‧‧基板 4‧‧‧ substrate
50‧‧‧劃線工具 50‧‧‧ Crossing tool
51、52‧‧‧金剛石粒 51, 52‧‧‧diamond particles
59‧‧‧柄 59‧‧‧ handle
D1~D3‧‧‧突起(第1~第3突起) D1 ~ D3‧‧‧‧ protrusions (1st ~ 3rd protrusions)
EG‧‧‧端緣 EG‧‧‧Edge
EL‧‧‧脊線 EL‧‧‧Spine
FC‧‧‧主面 FC‧‧‧ main face
IC‧‧‧初始龜裂 IC‧‧‧ initial crack
L1、L2‧‧‧直線部(第1及第2直線部) L1, L2‧‧‧Straight parts (1st and 2nd straight parts)
LL‧‧‧雷射光 LL‧‧‧Laser light
P0‧‧‧面 P0‧‧‧face
P1~P3‧‧‧部分(第1~第3部分) P1 ~ P3‧‧‧‧ (Parts 1 ~ 3)
P1a~P1d‧‧‧面 P1a ~ P1d‧‧‧face
RA、RB‧‧‧凹部 RA, RB‧‧‧ recess
SL‧‧‧劃線 SL‧‧‧ crossed
U2‧‧‧箭頭 U2‧‧‧Arrow
U3‧‧‧箭頭 U3‧‧‧ Arrow
VL‧‧‧假想直線 VL‧‧‧imaginary straight line
圖1係表示本發明之實施形態1中使劃線自初始龜裂伸展之情形之局部俯視圖。 FIG. 1 is a partial plan view showing a state where a scribe line is extended from an initial crack in Embodiment 1 of the present invention.
圖2係沿圖1之線II-II之概略局部剖面圖。 FIG. 2 is a schematic partial cross-sectional view taken along the line II-II of FIG. 1. FIG.
圖3係自圖2之箭頭III之視點觀察之金剛石粒之俯視圖。 FIG. 3 is a top view of the diamond grains as viewed from the viewpoint of arrow III in FIG. 2.
圖4係沿圖3之線IV-IV之概略局部剖面圖。 FIG. 4 is a schematic partial cross-sectional view taken along line IV-IV of FIG. 3.
圖5係對圖4之構成賦予尺寸之圖。 FIG. 5 is a view showing dimensions of the configuration of FIG. 4.
圖6係概略表示本發明之實施形態1中之劃線之形成方法之第1步驟之局部剖面圖。 FIG. 6 is a partial cross-sectional view schematically showing a first step of a method for forming a scribe line in Embodiment 1 of the present invention.
圖7係概略表示本發明之實施形態1中之劃線之形成方法之第2步驟之局部剖面圖。 Fig. 7 is a partial cross-sectional view schematically showing a second step of the method for forming a scribe line in the first embodiment of the present invention.
圖8係概略表示本發明之實施形態1中之劃線之形成方法之第3步驟之局部剖面圖。 8 is a partial cross-sectional view schematically showing a third step of the method for forming a scribe line in the first embodiment of the present invention.
圖9係概略表示本發明之實施形態1中之劃線之形成方法之第4步驟之局部剖面圖。 Fig. 9 is a partial cross-sectional view schematically showing a fourth step of the method for forming a scribing line in the first embodiment of the present invention.
圖10係概略表示本發明之實施形態1中之劃線之形成方法之第5步驟之局部剖面圖。 Fig. 10 is a partial cross-sectional view schematically showing a fifth step of the method for forming a scribing line in the first embodiment of the present invention.
圖11係概略表示本發明之實施形態2中之劃線工具之製造方法之一步驟之俯視圖。 FIG. 11 is a plan view schematically showing a step of a method for manufacturing a scribing tool in Embodiment 2 of the present invention.
圖12係概略表示本發明之實施形態3中之劃線工具具備之金剛石粒之構成之局部剖面圖。 FIG. 12 is a partial cross-sectional view schematically showing a configuration of diamond grains provided in a scribe tool in Embodiment 3 of the present invention.
以下,基於圖式對本發明之實施形態進行說明。再者,以下圖式中對相同或相當之部分附加相同參照編號,且不重複其說明。 Hereinafter, embodiments of the present invention will be described based on the drawings. In the following drawings, the same reference numerals are given to the same or corresponding parts, and descriptions thereof are not repeated.
(實施形態1) (Embodiment 1)
參照圖1及圖2,首先說明本實施形態之概要。準備劃線工具50,該劃線工具50包含柄59及安裝於該柄59之金剛石粒51。又,準備設有具有端緣EG之主面FC之基板4。藉由使金剛石粒51撞擊端緣EG而形成初始龜裂IC。劃線工具50於主面FC上進而移行(圖中箭頭V4),藉此使劃線SL自初始龜裂IC伸展。從而形成劃線SL。 First, the outline of this embodiment will be described with reference to FIGS. 1 and 2. A scribing tool 50 is prepared. The scribing tool 50 includes a shank 59 and diamond grains 51 mounted on the shank 59. In addition, a substrate 4 having a main surface FC having an edge EG is prepared. An initial crack IC is formed by causing the diamond particles 51 to hit the edge EG. The scribe tool 50 moves on the main surface FC (arrow V4 in the figure), thereby extending the scribe SL from the initial crack IC. Thereby, a scribe line SL is formed.
其次,詳細敍述金剛石粒51之構成。 Next, the structure of the diamond grains 51 will be described in detail.
參照圖3,於金剛石粒51設有面P0、及包圍面P0之面P1a~P1d。面P1a及P1b係彼此相鄰之一對面。於面P1a及P1b之交界處,金剛石粒51上設有脊線EL。脊線EL具有連接面P0之一端(後述突起D1之位置)、及另一端(未圖示)。於脊線EL上分別與一端及另一端隔開之位置,形成有凹部RA。關於凹部RA之詳細情形於後文敍述。 Referring to FIG. 3, a surface P0 and surfaces P1 a to P1 d surrounding the surface P0 are provided on the diamond grains 51. The faces P1a and P1b are opposite to each other. A ridge line EL is provided on the diamond grain 51 at the boundary between the surfaces P1a and P1b. The ridge line EL has one end (the position of the protrusion D1 described later) of the connection surface P0 and the other end (not shown). Recesses RA are formed at positions spaced apart from one end and the other end on the ridge line EL. The details of the recessed portion RA will be described later.
再者,關於面P1b與P1c之對、面P1c與P1d之對、及面P1d與P1a之對亦分別相同。較佳為,自結晶學上而言,面P0為(001)面,面P1a~P1d分別為(111)面、(-111)面、(-1-11)面及(1-11)面。 The same applies to the pair of faces P1b and P1c, the pair of faces P1c and P1d, and the pair of faces P1d and P1a. Preferably, in terms of crystallography, the plane P0 is the (001) plane, and the planes P1a to P1d are the (111) plane, the (-111) plane, the (-1-11) plane, and the (1-11) plane, respectively. .
參照圖4,金剛石粒51包含部分P1~P3(第1~第3部分)。部分P1具有設於脊線EL一端之突起D1(第1突起)、及沿脊線EL自突起D1延伸之直線部L1(第1直線部)。於部分P2設有連接直線部L1而配置於脊線EL上之凹部RA。於部分P1及P2之間,直線部L1與凹部RA相合而構成突起D2(第2突起)。 Referring to FIG. 4, the diamond particles 51 include portions P1 to P3 (parts 1 to 3). The portion P1 includes a protrusion D1 (first protrusion) provided at one end of the ridge line EL, and a straight portion L1 (first straight portion) extending from the protrusion D1 along the ridge line EL. In the portion P2, a recessed portion RA that connects the straight portion L1 and is disposed on the ridgeline EL is provided. Between the portions P1 and P2, the straight portion L1 and the recessed portion RA meet to form a protrusion D2 (second protrusion).
部分P3具有自凹部RA沿脊線EL延伸之直線部L2(第2直線部)。於部分P3及P2之間,凹部RA與直線部L2相合而構成突起D3(第3突起)。直線部L1及L2位於假想直線VL(一假想直線)上。藉此,凹部RA係局部地設於假想直線VL上。上述突起D1~D3皆為脊線EL與平面或曲面所成之角部,其前端為點狀或微小之曲面。 The portion P3 has a straight portion L2 (second straight portion) extending from the recessed portion RA along the ridge line EL. Between the portions P3 and P2, the recessed portion RA and the straight portion L2 meet to form a protrusion D3 (third protrusion). The straight portions L1 and L2 are located on a virtual straight line VL (a virtual straight line). Thereby, the recessed part RA is locally provided on the virtual straight line VL. The above-mentioned protrusions D1 to D3 are all corners formed by the ridge line EL and a plane or a curved surface, and the front ends thereof are point-shaped or minute curved surfaces.
參照圖5,較佳為直線部L1具有超過30μm且小於100μm之長度M1。較佳為凹部RA沿脊線EL而具有超過30μm且小於100μm之長度M2。較佳為凹部RA具有超過10μm且小於50μm之深度M3。 Referring to FIG. 5, it is preferable that the straight portion L1 has a length M1 of more than 30 μm and less than 100 μm. It is preferable that the recessed portion RA has a length M2 of more than 30 μm and less than 100 μm along the ridge line EL. It is preferable that the recessed portion RA has a depth M3 of more than 10 μm and less than 50 μm.
其次,以下詳細說明形成劃線SL之劃線方法。 Next, a scribing method for forming the scribing SL will be described in detail below.
首先,準備劃線工具50(圖2)。具體而言,準備安裝於柄59(圖2)之金剛石粒51(圖5)。 First, a scribing tool 50 (FIG. 2) is prepared. Specifically, the diamond grains 51 (FIG. 5) mounted on the shank 59 (FIG. 2) are prepared.
參照圖6,準備基板4。藉由使柄59(圖2)移動而將金剛石粒51配置 於待機位置。具體而言,將金剛石粒51之突起D1配置得高於基板4之主面FC。再者,突起D1~D3與主面FC上隔開而配置。凹部RA配置成面朝端緣EG。 6, a substrate 4 is prepared. The diamond grains 51 are arranged by moving the handle 59 (FIG. 2). In standby position. Specifically, the protrusions D1 of the diamond grains 51 are arranged higher than the main surface FC of the substrate 4. The protrusions D1 to D3 are arranged apart from the main surface FC. The recessed portion RA is arranged to face the end edge EG.
參照圖7,如圖中箭頭V1所示,金剛石粒51下降而使得整個凹部RA位於較主面FC更下方。將此時之自主面FC至突起D1之距離稱為切入量,通常設定為100μm以上。 Referring to FIG. 7, as shown by an arrow V1 in the figure, the diamond particles 51 are lowered so that the entire recessed portion RA is located below the main surface FC. The distance from the main surface FC to the protrusion D1 at this time is called the cut-in amount, and is usually set to 100 μm or more.
參照圖8,如圖中箭頭U2所示,將金剛石粒51朝基板4水平移動。藉此,金剛石粒51之直線部L2接觸基板4之端緣EG。結果,金剛石粒51跨上基板4(圖中箭頭V2)。又,為了於上述接觸時避免產生過度衝擊,上述水平移動(圖8之箭頭U2)之速度較佳為充分小於劃線SL形成時(圖10之箭頭V4)之速度。例如,前者為5mm/秒以上且20mm/秒以下之程度,後者為300mm/秒以上且500mm/秒以下之程度。金剛石粒51跨上基板4後之自主面FC至突起D1之距離(實際上係金剛石粒咬入基板4之深度)變成1~7μm左右。 Referring to FIG. 8, as shown by an arrow U2 in the figure, the diamond particles 51 are horizontally moved toward the substrate 4. Thereby, the straight portion L2 of the diamond grains 51 contacts the edge EG of the substrate 4. As a result, the diamond particles 51 straddle the upper substrate 4 (arrow V2 in the figure). In addition, in order to avoid excessive impact during the contact, the speed of the horizontal movement (arrow U2 in FIG. 8) is preferably sufficiently lower than the speed when the scribe line SL is formed (arrow V4 in FIG. 10). For example, the former is approximately 5 mm / sec to 20 mm / sec, and the latter is approximately 300 mm / sec to 500 mm / sec. The distance from the main surface FC to the protrusion D1 after the diamond particles 51 cross the upper substrate 4 (actually the depth that the diamond particles bite into the substrate 4) becomes about 1 to 7 μm.
然後,於基板4之主面FC之端緣EG形成初始龜裂IC。具體而言,執行以下步驟。 Then, an initial crack IC is formed on the edge EG of the main surface FC of the substrate 4. Specifically, perform the following steps.
進而參照圖9,繼續進行水平移動(圖中箭頭U3),而於脊線EL上使基板4之主面FC之端緣EG自直線部L2上滑入凹部RA中。此時,突起D3刮過端緣EG而可能對端緣EG形成損傷。隨著水平移動不斷進行,金剛石粒51之凹部RA卡於端緣EG,且利用突起D2刮過卡於凹部RA之端緣EG(圖中箭頭V3)。 Further referring to FIG. 9, the horizontal movement is continued (arrow U3 in the figure), and the edge EG of the main surface FC of the substrate 4 is slid into the recess RA from the linear portion L2 on the ridge line EL. At this time, the protrusion D3 scrapes the edge EG and may damage the edge EG. As the horizontal movement continues, the concave portion RA of the diamond grain 51 is caught on the edge EG, and the protrusion D2 is used to scrape the edge EG caught on the concave portion RA (arrow V3 in the figure).
參照圖10,藉由上述步驟而於基板4之主面FC之端緣EG形成初始龜裂IC。然後,於主面FC上使金剛石粒51之部分P1之一部分(具體而言係突起D1與直線部L1之一部分)自初始龜裂IC開始移行(圖中箭頭V4),從而使劃線SL(圖1及圖2)伸展。形成初始龜裂IC後、形成劃線SL之過程中,如圖所示,較佳為凹部RA位於基板4之外部。 Referring to FIG. 10, an initial crack IC is formed on the edge EG of the main surface FC of the substrate 4 through the above steps. Then, a portion of the portion P1 of the diamond grain 51 (specifically, a portion of the protrusion D1 and the straight portion L1) is moved from the initial crack IC on the main surface FC (arrow V4 in the figure), so that the scribe line SL ( Figure 1 and Figure 2) Stretch. After the initial crack IC is formed, in the process of forming the scribe line SL, as shown in the figure, it is preferable that the concave portion RA is located outside the substrate 4.
又,初始龜裂IC及劃線SL分別可藉由使金剛石粒51以適當之負荷向基板4之主面FC上按壓並於水平方向(圖8~圖10中之右方向)移動而連續地形成。只要上述負荷選擇地適當,便會於無特別控制之情形下自動產生包含箭頭V2(圖8)及V3(圖9)之微小上下移動。 In addition, the initial crack IC and the scribe line SL can be continuously pressed by pressing the diamond grains 51 on the main surface FC of the substrate 4 with an appropriate load and moving in the horizontal direction (right direction in FIGS. 8 to 10). form. As long as the load is selected appropriately, a small vertical movement including arrows V2 (Figure 8) and V3 (Figure 9) will be automatically generated without special control.
根據本實施形態,卡於凹部RA之端緣EG(圖9)被突起D2刮過。藉此,可更確實地形成初始龜裂IC(圖10)。再者,於利用突起D2刮過卡於凹部RA之端緣EG前,基板4之端緣EG自直線部L2上滑入凹部RA中。此時,亦可藉由突起D3刮過端緣EG而形成損傷。由於該損傷之產生,能夠進而更確實地形成初始龜裂IC。 According to this embodiment, the edge EG (FIG. 9) caught on the recessed portion RA is scraped by the protrusion D2. Thereby, an initial crack IC can be formed more reliably (FIG. 10). Furthermore, before the protrusion D2 is scraped across the edge EG of the recessed portion RA, the edge EG of the substrate 4 slides from the straight portion L2 into the recessed portion RA. At this time, the protrusion D3 can also scratch the edge EG to form a damage. Due to the occurrence of this damage, the initial cracked IC can be formed more reliably.
直線部L1具有超過30μm之長度M1(圖5),藉此於初始龜裂IC形成結束後,以適於劃線之負荷及切入深度形成劃線SL時(圖10),凹部RA充分遠離基板4。藉此,輕易地避免了凹部RA對形成劃線SL之影響。直線部L1具有小於100μm之長度M1(圖5),藉此突起D2確實地接觸端緣EG。假設長度M1過大,設定適於劃線之負荷及切入深度時突起D2位於基板4之主面FC上之可能性高,該情形時便無法對端緣EG造成損傷。 The linear portion L1 has a length M1 (FIG. 5) of more than 30 μm, so that after the formation of the initial cracked IC, the scribe line SL is formed with a load suitable for scribing and a depth of cut (FIG. 10), the recess RA is sufficiently far from the substrate 4. Thereby, the influence of the recessed portion RA on the formation of the scribe line SL is easily avoided. The straight portion L1 has a length M1 (FIG. 5) of less than 100 μm, whereby the protrusion D2 surely contacts the edge EG. Assuming that the length M1 is too large, it is highly likely that the protrusion D2 is located on the main surface FC of the substrate 4 when the load suitable for the scribe and the depth of cut are set. In this case, the edge EG cannot be damaged.
凹部RA沿脊線EL而具有超過30μm之長度M2(圖5),藉此可以使金剛石粒51之凹部RA更確實地卡於基板4之端緣EG。凹部RA沿脊線EL而具有小於100μm之長度M2(圖5),藉此可減小脊線EL上因基板4之主面FC之端緣EG自直線部L2上滑入凹部RA中而由突起D3刮過端緣EG所形成之損傷之位置、與被突起D2刮過之位置之間的偏離。藉此,容易對端緣EG之同一部位賦予兩種作用。從而可進而更確實地形成初始龜裂IC。 The recessed portion RA has a length M2 (FIG. 5) of more than 30 μm along the ridge line EL, so that the recessed portion RA of the diamond grain 51 can be more reliably caught on the edge EG of the substrate 4. The recessed portion RA has a length M2 (FIG. 5) of less than 100 μm along the ridgeline EL, thereby reducing the sliding on the ridgeline EL caused by the edge EG of the main surface FC of the substrate 4 from the straight portion L2 into the recessed portion RA The deviation between the position where the protrusion D3 scrapes the damage formed by the edge EG and the position where the protrusion D2 scrapes. Thereby, it is easy to give two effects to the same part of the edge EG. As a result, the initial cracked IC can be formed more reliably.
凹部RA具有超過10μm之深度M3(圖5),藉此利用對於形成初始龜裂IC而言充分突出之突起D2刮過基板4之端緣EG。藉此,可進而更確實地形成初始龜裂IC。凹部RA具有小於50μm之深度M3(圖5),藉此可 更容易地形成凹部RA。 The recess RA has a depth M3 (FIG. 5) of more than 10 μm, thereby scraping the edge EG of the substrate 4 with the protrusion D2 that sufficiently protrudes for forming the initial crack IC. Thereby, the initial crack IC can be formed more reliably. The recessed portion RA has a depth M3 (FIG. 5) of less than 50 μm. It is easier to form the recessed portion RA.
又,於本實施形態中,如圖7所示,係下降金剛石粒51使得整個凹部RA位於主面FC下,但亦可替代地下降金剛石粒51使得凹部RA之一部分位於主面FC下。該情形時,藉由之後金剛石粒51之水平移動(圖9:U3),使端緣EG插入凹部RA內。之後,進行上述圖9以後之步驟。 In this embodiment, as shown in FIG. 7, the diamond particles 51 are lowered so that the entire concave portion RA is located below the main surface FC. Alternatively, the diamond particles 51 may be lowered so that a part of the concave portions RA is located below the main surface FC. In this case, the end edge EG is inserted into the recessed portion RA by the horizontal movement of the diamond particles 51 later (FIG. 9: U3). After that, the above steps from FIG. 9 are performed.
根據該變化例,突起D3不接觸基板4,僅藉由突起D2刮過端緣EG之一次作用便形成初始龜裂IC。藉此,不同於藉由兩次以上之作用形成初始龜裂IC之情形,不會因位置偏離而形成兩處以上之初始龜裂IC。若於不必要之部位形成初始龜裂IC,便可能產生意料外之龜裂伸展。 According to this modification, the protrusion D3 does not contact the substrate 4, and the initial crack IC is formed only by one action of the protrusion D2 scraping the edge EG. With this, unlike the case where the initial cracked IC is formed by two or more actions, two or more initial cracked ICs are not formed due to positional deviation. If an initial crack IC is formed at an unnecessary location, unexpected crack extension may occur.
又,上述說明中係金剛石粒51相對於基板4而移動,但只要能獲得同樣之相對移動,亦可使基板4相對於金剛石粒51移動、或者兩者都移動。 In the above description, the system-type diamond grains 51 are moved with respect to the substrate 4, but the substrate 4 may be moved with respect to the diamond grains 51 or both as long as the same relative movement can be obtained.
(實施形態2) (Embodiment 2)
於本實施形態中,說明上述實施形態1之劃線工具50(圖2)之製造方法。 In this embodiment, a method for manufacturing the scribing tool 50 (FIG. 2) according to the first embodiment will be described.
參照圖11,準備安裝於柄59(圖2)之金剛石粒51。如實施形態1所說明般,於金剛石粒51設有脊線EL,該脊線EL具有設有突起D1之端。又,此時尚未形成凹部RA(圖3)。 Referring to Fig. 11, a diamond grain 51 to be mounted on a shank 59 (Fig. 2) is prepared. As described in the first embodiment, a ridge line EL is provided on the diamond grain 51, and the ridge line EL has an end provided with a protrusion D1. At this time, the recessed portion RA has not yet been formed (FIG. 3).
其次,於與突起D1隔開之位置,向金剛石粒51照射與脊線EL交叉之雷射光LL。利用藉此產生之雷射剝蝕,於脊線EL上形成凹部RA(圖3)。 Next, the diamond particles 51 are irradiated with the laser light LL crossing the ridge line EL at a position spaced from the protrusion D1. With the laser ablation thus generated, a recessed portion RA is formed on the ridge line EL (FIG. 3).
根據本實施形態,可容易地製造金剛石粒51。再者,金剛石粒51亦可於經上述雷射剝蝕後安裝於柄59(圖2)。 According to this embodiment, the diamond grains 51 can be easily manufactured. Furthermore, the diamond particles 51 can also be mounted on the shank 59 after the above-mentioned laser ablation (FIG. 2).
(實施形態3) (Embodiment 3)
參照圖12,本實施形態之劃線工具包含金剛石粒52來代替金剛石 粒51(實施形態1:圖4)。於金剛石粒52設有凹部RB來代替凹部RA(圖4)。換言之,於部分P2設有連接直線部L1而配置於脊線EL上之凹部RB。於部分P1及P2之間,直線部L1與凹部RB相合而構成突起D2。於本實施形態中,凹部RB延伸至脊線EL中與突起D1所處之一端相反之另一端(圖12中未圖示)。換言之,未設置部分P3(圖4),因此亦未設置突起D3(圖4)。 Referring to FIG. 12, the scribing tool of this embodiment includes diamond grains 52 instead of diamond. Grain 51 (Embodiment 1: Fig. 4). The diamond grain 52 is provided with a recessed portion RB instead of the recessed portion RA (FIG. 4). In other words, a recessed portion RB that connects the straight portion L1 and is disposed on the ridgeline EL is provided at the portion P2. Between the portions P1 and P2, the straight portion L1 and the recessed portion RB meet to form a protrusion D2. In this embodiment, the recessed portion RB extends to the other end (not shown in FIG. 12) of the ridge line EL opposite to the end where the protrusion D1 is located. In other words, the portion P3 (FIG. 4) is not provided, and therefore the protrusion D3 (FIG. 4) is not provided.
再者,除上述以外之構成係與上述實施形態1之構成大致相同,因此,對相同或對應之要素附加相同符號,且不重複其說明。 In addition, the configuration other than the above is substantially the same as the configuration of the first embodiment. Therefore, the same or corresponding elements are denoted by the same reference numerals, and descriptions thereof are not repeated.
根據本實施形態,金剛石粒52不具有突起D3,僅藉由突起D2刮過端緣EG之一次作用便形成初始龜裂IC。藉此,不同於藉由兩次以上之作用形成初始龜裂IC之情形,不會因位置偏離而形成兩處以上之初始龜裂IC。若於不必要之部位形成初始龜裂IC,便可能產生意料外之龜裂伸展。 According to this embodiment, the diamond grain 52 does not have the protrusion D3, and the initial crack IC is formed only by the action of the protrusion D2 scraping the edge EG once. With this, unlike the case where the initial cracked IC is formed by two or more actions, two or more initial cracked ICs are not formed due to positional deviation. If an initial crack IC is formed at an unnecessary location, unexpected crack extension may occur.
應考慮到本次揭示之實施形態均為例示而非限制者。本發明之範圍並非由上述實施形態表示,而是由申請專利範圍表示,且意圖包含與申請專利範圍均等含義及範圍內之全部變更。 It should be considered that the embodiments disclosed this time are illustrative and not restrictive. The scope of the present invention is not indicated by the above-mentioned embodiments, but is expressed by the scope of patent application, and is intended to include all modifications within the meaning and scope equivalent to the scope of patent application.
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CN101549415A (en) * | 2008-03-31 | 2009-10-07 | 住友电工硬质合金株式会社 | Indexable insert with nick |
CN102275229A (en) * | 2010-06-14 | 2011-12-14 | 三星钻石工业股份有限公司 | Cutting method of fragile material base plate |
TWI406821B (en) * | 2004-07-16 | 2013-09-01 | Mitsuboshi Diamond Ind Co Ltd | Cutter wheel and its manufacturing method, manual scribing tool and scribing device |
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TWI406821B (en) * | 2004-07-16 | 2013-09-01 | Mitsuboshi Diamond Ind Co Ltd | Cutter wheel and its manufacturing method, manual scribing tool and scribing device |
CN101549415A (en) * | 2008-03-31 | 2009-10-07 | 住友电工硬质合金株式会社 | Indexable insert with nick |
CN102275229A (en) * | 2010-06-14 | 2011-12-14 | 三星钻石工业股份有限公司 | Cutting method of fragile material base plate |
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