TWI625023B - DC power wireless chip - Google Patents
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Abstract
本項發明創作屬於一種直流電氣裝置電路晶片之新穎供電概念,主要係利用一可置換式線圈晶片與一電氣裝置電路晶片結合成雙層晶片供電結構,該線圈晶片可接受電路晶片外部之電源作電能感應,此感應電能經由雙層晶片供電結構提供該電路晶片工作所需之電能,使得直流電氣裝置電路晶片工作無需額外之直流到直流轉換電路或電源佈線。本項發明創作在一直流電氣裝置設一線圈晶片系統,該線圈晶片系統內部設有一中央處理器電路線圈晶片、多個高速電路線圈晶片及多個低速電路線圈晶片,其中,中央處理器電路線圈晶片由一上層線圈晶片及一下層中央處理器電路晶片組成一雙層中央處理器晶片供電結構,高速電路線圈晶片由一上層線圈晶片及一下層高速電路晶片組成一雙層高速晶片供電結構,而低速電路線圈晶片由一上層線圈晶片及一下層低速電路晶片組成一雙層低速晶片供電結構。各個雙層晶片供電結構之上層線圈晶片可接受電路晶片外部之電源作電能感應(線圈晶片感應)並轉換成直流電能,上層線圈晶片將直流電能經由雙層晶片供電結構內部直接並穩定地供電予下層電路晶片使用(線圈晶片供電);此外,上層線圈晶片與下層電路晶片可機械連接及電氣連接 以作線圈晶片感應與供電,上層線圈晶片與下層電路晶片亦可機械分離及電氣分離以作線圈晶片更換。如此,利用本項發明創作之「直流電力無線晶片」,令一直流電氣裝置即能以內部之線圈晶片供電予電路晶片使用,該電氣裝置電路晶片工作無需額外之直流到直流轉換電路或電源佈線。 The invention belongs to a novel power supply concept of a DC electrical device circuit chip, which mainly uses a replaceable coil wafer and an electrical device circuit chip to form a two-layer wafer power supply structure, and the coil wafer can be used as a power supply outside the circuit chip. Inductive power, which provides the power required to operate the circuit wafer via a two-layer wafer power supply structure, so that the DC electrical device circuit wafer operation does not require additional DC to DC conversion circuitry or power wiring. The invention provides a coil wafer system in a DC electrical device. The coil wafer system is internally provided with a central processor circuit coil chip, a plurality of high speed circuit coil chips and a plurality of low speed circuit coil chips, wherein the central processor circuit coil The wafer consists of a top layer coil chip and a lower layer central processor circuit chip to form a two-layer central processor chip power supply structure. The high speed circuit coil chip is composed of an upper layer coil chip and a lower layer high speed circuit chip to form a double layer high speed wafer power supply structure. The low-speed circuit coil chip is composed of an upper layer coil chip and a lower layer low-speed circuit chip to form a double-layer low-speed chip power supply structure. The upper layer coil wafer of each double-layer wafer power supply structure can receive the power supply outside the circuit chip for power induction (coil wafer sensing) and convert it into DC power, and the upper layer coil wafer directly and stably supplies DC power to the inside through the double-layer chip power supply structure. The lower layer circuit wafer is used (coil wafer power supply); in addition, the upper layer coil wafer and the lower layer circuit wafer are mechanically and electrically connected For coil wafer sensing and power supply, the upper coil wafer and the lower layer circuit wafer can also be mechanically separated and electrically separated for coil wafer replacement. Thus, the "DC power wireless chip" created by the invention enables the DC electrical device to be powered by an internal coil wafer for use in a circuit wafer that does not require an additional DC to DC conversion circuit or power wiring. .
Description
本項發明創作係關於一種「直流電力無線晶片」電路,尤指一種利用一可置換式線圈晶片與一直流電氣裝置電路晶片結合成雙層晶片供電結構,以該線圈晶片作電能感應並經由雙層晶片供電結構提供該電路晶片工作所需之電能,使一電氣裝置電路晶片工作無需額外之直流到直流轉換電路或電源佈線的新式電路晶片供電電路者。 The invention relates to a "DC power wireless chip" circuit, in particular to a two-layer wafer power supply structure using a replaceable coil wafer and a DC device circuit chip, and the coil wafer is used for electric energy induction and via a double The layer wafer power supply structure provides the power required for the operation of the circuit wafer to enable an electrical device circuit wafer to operate without the need for additional DC to DC conversion circuitry or power supply wiring for the new circuit chip power supply circuit.
按,在現今石油供應來源不穩、油價起伏不定的時代,石油相關能源的使用成本皆大幅提高;同時,為了地球環境考量,避免因使用石油過度排放二氧化碳而造成環境的劇烈改變,各方均倡導節能減碳的相關做法。其中,創新電氣裝置使用電源電能之方式,也可以是節能減碳的一種具體做法。 According to the current era of unstable oil supply and fluctuating oil prices, the cost of using petroleum-related energy has increased substantially. At the same time, for the sake of the global environment, to avoid drastic changes in the environment caused by excessive carbon dioxide emissions from oil use, Advocate energy conservation and carbon reduction related practices. Among them, the innovative electrical device uses the power supply method, which can also be a specific method of energy saving and carbon reduction.
習用直流電氣裝置(如:電腦內部)電路晶片用電之方式,請參閱第1圖所示,電氣裝置內部之一般晶片系統01與一直流到直流轉換電路02電氣連接,電氣裝置外部之直流電力經該直流到直流轉換電路02供應一般晶片系統01內部各個電路晶片工作所需之電能。如第2圖所示,一電氣裝置經由一直流到直流轉換電路02供應一般晶片系統01內部之中央處理器電路晶片010(即:CPU晶片)、高速電路晶片011、高速電路晶片013 (如:記憶體晶片、繪圖晶片等)及低速電路晶片012、低速電路晶片014(如:週邊控制晶片等)工作所需電能。 For the use of DC electric devices (such as internal computer), the circuit chip is electrically connected. Please refer to Figure 1. The general wafer system 01 inside the electrical device is electrically connected to the DC conversion circuit 02, and the DC power outside the electrical device. The DC-to-DC conversion circuit 02 supplies the electric energy required for the operation of each of the circuit chips in the general wafer system 01. As shown in FIG. 2, an electrical device supplies a central processing unit circuit 010 (ie, a CPU chip), a high-speed circuit chip 011, and a high-speed circuit chip 013 inside the general wafer system 01 via a DC to DC conversion circuit 02. (such as: memory chip, graphics wafer, etc.) and low-speed circuit chip 012, low-speed circuit chip 014 (such as: peripheral control chip, etc.) work required electrical energy.
電氣裝置如一般電腦均講求「輕、薄、短、小」之整體 設計,一方面可以節省產品材料成本(節能減碳)、提高產品技術水準,另一方面也可以迎合使用需求、提升消費意願。然而,由於直流電氣裝置經常使用之直流到直流轉換電路與電源佈線往往佔據電氣裝置內部相當空間,以致不易達成電氣裝置輕薄短小之設計要求。因此,如何創新電氣裝置使用電源電能之方式,成為各個電氣裝置製造廠商之研究方向與努力目標。 Electrical installations such as general computers are all about "light, thin, short and small". Design, on the one hand, can save product material costs (energy saving and carbon reduction), improve product technology standards, on the other hand, it can also cater to the needs of use and increase consumer willingness. However, DC-to-DC conversion circuits and power supply wiring, which are often used in DC electrical devices, often occupy a considerable space inside the electrical device, so that it is difficult to achieve the design requirements of the light and thin electrical devices. Therefore, how to innovate the way in which electrical devices use power and power has become the research direction and goal of various electrical device manufacturers.
鑑於上述先前技術所衍生的各項缺點,本案創作人乃亟思加以改良創新,並經苦心孤詣潛心研究後,終於成功研發完成本案之一種「直流電力無線晶片」電路。 In view of the shortcomings arising from the above prior art, the creator of the case was improved and innovated by the philosopher, and after painstaking research, he finally successfully developed a "DC power wireless chip" circuit for the case.
本項發明創作之目的,在於提供一直流電氣裝置一種利用可置換式線圈晶片作電能感應,此感應電能再提供電氣裝置電路晶片工作所需電能之新式電路晶片供電電路。請參閱第3圖所示,其概念係在一直流電氣裝置設一線圈晶片系統11,該線圈晶片系統11經由一逆變器03與電氣裝置外部之直流電力電氣連接。該線圈晶片系統11內部設有可置換式線圈晶片,該線圈晶片與線圈晶片系統11內部設有之電氣裝置電路晶片結合成雙層晶片供電結構;該線圈晶片可接受電路晶片外部之電源作電能感應,此感應電能經由雙層晶片供電結構提供該電氣裝置電路晶片工作所需之電能。如此,令一直流電氣裝置即能以內部之線圈晶片供電予電路晶片 使用,該電氣裝置電路晶片工作無需額外之直流到直流轉換電路或電源佈線。 The purpose of the invention is to provide a new type of circuit chip power supply circuit that utilizes a replaceable coil wafer for power induction, which in turn provides electrical energy required for the operation of the circuit chip of the electrical device. Referring to FIG. 3, the concept is to provide a coil wafer system 11 in a DC electrical device. The coil wafer system 11 is electrically connected to DC power external to the electrical device via an inverter 03. The coil wafer system 11 is internally provided with a replaceable coil wafer, which is combined with an electrical device circuit chip provided inside the coil wafer system 11 to form a two-layer wafer power supply structure; the coil wafer can receive power from outside the circuit chip for power Inductively, the inductive power provides electrical energy required for operation of the electrical device circuit wafer via a dual layer wafer powering structure. In this way, the DC electrical device can be powered by the internal coil chip to the circuit chip. In use, the electrical device circuit wafer operation does not require additional DC to DC conversion circuitry or power wiring.
為達上述之目的,本項發明創作之技術手段在於,在一 直流電氣裝置(如:電腦內部)設一線圈晶片系統,該線圈晶片系統內部設有一中央處理器電路線圈晶片、多個高速電路線圈晶片及多個低速電路線圈晶片,其中,該中央處理器電路線圈晶片由一上層線圈晶片(中央處理器線圈晶片)及一下層中央處理器電路晶片(CPU晶片)組成一雙層中央處理器晶片供電結構,該高速電路線圈晶片由一上層線圈晶片(高速線圈晶片)及一下層高速電路晶片(一般高速電路晶片,如:記憶體晶片、繪圖晶片等)組成一雙層高速晶片供電結構,而該低速電路線圈晶片由一上層線圈晶片(低速線圈晶片)及一下層低速電路晶片(一般低速電路晶片,如:週邊控制晶片)組成一雙層低速晶片供電結構。該電氣裝置線圈晶片系統之該中央處理器電路線圈晶片與該多個高速電路線圈晶片、該多個低速電路線圈晶片分別以信號電氣連接,使得該中央處理器電路晶片可對該多個高速電路晶片、該多個低速電路晶片作信號控制(執行該電氣裝置之功能)。 For the above purposes, the technical means of the invention is to The DC electrical device (for example, inside the computer) is provided with a coil wafer system, wherein the coil wafer system is internally provided with a central processor circuit coil chip, a plurality of high speed circuit coil chips and a plurality of low speed circuit coil chips, wherein the central processor circuit The coil wafer is composed of an upper layer coil chip (central processing unit coil wafer) and a lower layer central processing unit circuit chip (CPU chip), which is composed of a double layer central processing unit wafer power supply structure, and the high speed circuit coil wafer is composed of an upper layer coil wafer (high speed coil). Wafer) and lower layer high speed circuit chips (generally high speed circuit chips, such as memory chips, graphics chips, etc.) constitute a two-layer high-speed chip power supply structure, and the low-speed circuit coil chip is composed of an upper layer coil chip (low-speed coil chip) and The lower layer low speed circuit chips (generally low speed circuit chips, such as peripheral control chips) form a double layer low speed chip power supply structure. The central processor circuit coil chip of the electrical device coil wafer system and the plurality of high speed circuit coil chips and the plurality of low speed circuit coil wafers are electrically connected by signals, respectively, such that the central processor circuit chip can be used for the plurality of high speed circuits The chip and the plurality of low-speed circuit chips are signal-controlled (executing the function of the electrical device).
該雙層中央處理器晶片供電結構之上層線圈晶片可接受電 氣裝置外部之直流電力經逆變器逆變後再轉換成直流電能,該上層線圈晶片將直流電能經由雙層中央處理器晶片供電結構內部直接並穩定地供電予下層中央處理器電路晶片使用(中央處理器線圈晶片供電)。此外,上層線圈晶片與下層中央處理器電路晶片可機械連接及電氣連接以作線圈晶片供電,上層線圈晶片與下層中央處理器電路晶片亦可機械分離及電氣分離 以作線圈晶片更換(中央處理器線圈晶片可置換)。 The double layer central processor chip power supply structure upper layer coil wafer can receive electricity The DC power external to the gas device is inverted by the inverter and then converted into DC power. The upper coil wafer directly and stably supplies DC power to the lower central processor circuit chip via the dual-layer central processor chip power supply structure ( Central processor coil wafer power supply). In addition, the upper coil wafer and the lower central processor circuit wafer can be mechanically and electrically connected for power supply to the coil wafer, and the upper coil wafer and the lower central processor circuit wafer can also be mechanically separated and electrically separated. For coil wafer replacement (central processor coil wafer can be replaced).
該雙層高速晶片供電結構之上層線圈晶片可接受高速電路 晶片外部之電源(即中央處理器線圈晶片感應供電)作電能感應(高速線圈晶片感應電能)並轉換成直流電能,該上層線圈晶片亦將直流電能經由雙層高速晶片供電結構內部直接並穩定地供電予下層高速電路晶片使用(高速線圈晶片供電)。此外,上層線圈晶片與下層高速電路晶片可機械連接及電氣連接以作線圈晶片感應(高速線圈晶片感應)與供電,上層線圈晶片與下層高速電路晶片亦可機械分離及電氣分離以作線圈晶片更換(高速線圈晶片可置換)。 The double layer high speed wafer power supply structure upper layer coil wafer can accept high speed circuit The power supply external to the chip (ie, the central processor coil chip is inductively powered) is used for power induction (high-speed coil wafer sensing power) and converted into DC power. The upper coil wafer also directs DC power directly and stably through the double-layer high-speed chip power supply structure. Power is supplied to the lower layer high speed circuit chip (high speed coil wafer power supply). In addition, the upper coil chip and the lower layer high speed circuit chip can be mechanically and electrically connected for coil wafer sensing (high speed coil wafer sensing) and power supply, and the upper coil wafer and the lower layer high speed circuit wafer can also be mechanically separated and electrically separated for coil wafer replacement. (High speed coil wafers can be replaced).
再者,該雙層低速晶片供電結構之上層線圈晶片亦可接受低 速電路晶片外部之電源(即高速線圈晶片感應供電)作電能感應(低速線圈晶片感應電能)並轉換成直流電能,該上層線圈晶片亦將直流電能經由雙層低速晶片供電結構內部直接並穩定地供電予下層低速電路晶片使用(低速線圈晶片供電)。此外,上層線圈晶片與下層低速電路晶片可機械連接及電氣連接以作線圈晶片感應(低速線圈晶片感應)與供電,上層線圈晶片與下層低速電路晶片亦可機械分離及電氣分離以作線圈晶片更換(低速線圈晶片可置換)。 Furthermore, the upper layer coil wafer of the double-layer low-speed wafer power supply structure can also be accepted low. The power supply external to the speed circuit chip (ie, high-speed coil chip induction power supply) is used for power induction (low-speed coil wafer induction power) and converted into DC power. The upper layer coil wafer also directly and stably DC power through the double-layer low-speed chip power supply structure. Power is supplied to the underlying low speed circuit die (powered by low speed coil die). In addition, the upper coil chip and the lower layer low speed circuit chip can be mechanically and electrically connected for coil wafer sensing (low speed coil wafer sensing) and power supply, and the upper coil wafer and the lower layer low speed circuit wafer can also be mechanically separated and electrically separated for coil wafer replacement. (Low speed coil wafers can be replaced).
由此,該中央處理器電路線圈晶片利用其雙層中央處理器 晶片供電結構可接受直流電力經逆變器供電並作中央處理器電路晶片供電,該多個高速電路線圈晶片利用其雙層高速晶片供電結構可接受感應供電(中央處理器線圈晶片感應供電)並作高速電路晶片供電,該多個低速電路線圈晶片利用其雙層低速晶片供電結構亦可接受感應供電(高速線圈 晶片感應供電)並作低速電路晶片供電。如此,利用本項發明創作之「直流電力無線晶片」,令一直流電氣裝置即能以內部之線圈晶片供電予電路晶片使用,該電氣裝置電路晶片工作無需額外之直流到直流轉換電路或電源佈線。 Thus, the central processor circuit coil wafer utilizes its dual layer central processor The wafer power supply structure accepts DC power supplied by the inverter and is powered by a central processing circuit chip that utilizes its two-layer high-speed chip power supply structure to receive inductive power supply (central processor coil wafer inductive power supply) and Powered by high-speed circuit chips, the low-speed circuit coils are also capable of receiving inductive power (high-speed coils) using their dual-layer low-speed chip power supply structure. The chip is inductively powered and powered by a low speed circuit chip. Thus, the "DC power wireless chip" created by the invention enables the DC electrical device to be powered by an internal coil wafer for use in a circuit wafer that does not require an additional DC to DC conversion circuit or power wiring. .
請參閱以下有關於本項發明創作「直流電力無線晶片」電路一較佳實施例之詳細說明及其附圖,將可進一步瞭解本創作之技術內容及其目的與功效: Please refer to the following detailed description of a preferred embodiment of the "DC power wireless chip" circuit of the present invention and its accompanying drawings, which will further understand the technical content of the creation and its purpose and effect:
01‧‧‧一般晶片系統 01‧‧‧General wafer system
010‧‧‧中央處理器電路晶片 010‧‧‧Central Processor Circuit Wafer
011‧‧‧高速電路晶片 011‧‧‧High speed circuit chip
012‧‧‧低速電路晶片 012‧‧‧Low speed circuit chip
013‧‧‧高速電路晶片 013‧‧‧High speed circuit chip
014‧‧‧低速電路晶片 014‧‧‧Low speed circuit chip
02‧‧‧直流到直流轉換電路 02‧‧‧DC to DC conversion circuit
03‧‧‧逆變器 03‧‧‧Inverter
11‧‧‧線圈晶片系統 11‧‧‧ coil wafer system
110‧‧‧中央處理器電路線圈晶片 110‧‧‧Central Processing Circuit Coil Wafer
1101‧‧‧上層中央處理器線圈晶片 1101‧‧‧Upper central processor coil wafer
1102‧‧‧下層中央處理器電路晶片 1102‧‧‧lower central processor circuit chip
111‧‧‧大型高速電路線圈晶片 111‧‧‧ Large high speed circuit coil wafer
1111‧‧‧上層第一高速線圈晶片 1111‧‧‧Upper first high speed coil wafer
1112‧‧‧下層大型高速電路晶片 1112‧‧‧Lower large-scale high-speed circuit chip
112‧‧‧大型低速電路線圈晶片 112‧‧‧ Large low-speed circuit coil wafer
1121‧‧‧上層第一低速線圈晶片 1121‧‧‧Upper first low speed coil wafer
1122‧‧‧下層大型低速電路晶片 1122‧‧‧Lower large low-speed circuit chip
113‧‧‧小型高速電路線圈晶片 113‧‧‧Small high-speed circuit coil wafer
1131‧‧‧上層第二高速線圈晶片 1131‧‧‧Upper second high speed coil wafer
1132‧‧‧下層小型高速電路晶片 1132‧‧‧Lower small high speed circuit chip
114‧‧‧小型低速電路線圈晶片 114‧‧‧Small low-speed circuit coil wafer
1141‧‧‧上層第二低速線圈晶片 1141‧‧‧Upper second low speed coil wafer
1142‧‧‧下層小型低速電路晶片 1142‧‧‧Lower small low-speed circuit chip
第1圖為一般晶片系統使用外部直流電力之示意圖。 Figure 1 is a schematic diagram of the use of external DC power for a typical wafer system.
第2圖為一般晶片系統使用外部直流電力之結構方塊圖與連接圖。 Figure 2 is a block diagram and connection diagram of the use of external DC power for a typical wafer system.
第3圖為本項發明創作線圈晶片系統使用外部直流電力之示意圖。 Figure 3 is a schematic diagram of the use of external DC power for the coil wafer system of the present invention.
第4圖為本項發明創作線圈晶片系統一較佳實施例之內部結構方塊圖與連接圖。 Figure 4 is a block diagram and a connection diagram of the internal structure of a preferred embodiment of the coil wafer system of the present invention.
第5圖為本項發明創作線圈晶片系統一較佳實施例之中央處理器電路線圈晶片內部結構示意圖。 FIG. 5 is a schematic diagram showing the internal structure of a central processor circuit coil wafer according to a preferred embodiment of the present invention.
第6圖為本項發明創作線圈晶片系統一較佳實施例之大型高速電路線圈晶片內部結構示意圖。 Figure 6 is a schematic view showing the internal structure of a large-scale high-speed circuit coil wafer according to a preferred embodiment of the present invention.
第7圖為本項發明創作線圈晶片系統一較佳實施例之大型低速電路線圈晶片內部結構示意圖。 Figure 7 is a schematic view showing the internal structure of a large low-speed circuit coil wafer according to a preferred embodiment of the present invention.
第8圖為本項發明創作線圈晶片系統一較佳實施例之小型高速電路線圈晶片內部結構示意圖。 Figure 8 is a schematic view showing the internal structure of a small high-speed circuit coil wafer according to a preferred embodiment of the present invention.
第9圖為本項發明創作線圈晶片系統一較佳實施例之小型低速電路線圈晶片內部結構示意圖。 Figure 9 is a schematic view showing the internal structure of a small low-speed circuit coil wafer according to a preferred embodiment of the present invention.
本項發明創作所提供之一種「直流電力無線晶片」電路,請參閱第3圖及第4圖所示,其係在一直流電氣裝置設一線圈晶片系統11(電氣裝置之感應供電、信號處理設備),該線圈晶片系統11內部設有一中央處理器電路線圈晶片110、一大型高速電路線圈晶片111、一大型低速電路線圈晶片112及一小型高速電路線圈晶片113、一小型低速電路線圈晶片114,該中央處理器電路線圈晶片110與該大型高速電路線圈晶片111、該小型高速電路線圈晶片113以信號電氣連接(高速晶片信號控制),該中央處理器電路線圈晶片110亦與該大型低速電路線圈晶片112、該小型低速電路線圈晶片114以信號電氣連接(低速晶片信號控制),使得該中央處理器電路線圈晶片110可對多個高速電路晶片、多個低速電路晶片作一般信號控制以執行該電氣裝置之功能。 A "DC power wireless chip" circuit provided by the present invention, as shown in FIG. 3 and FIG. 4, is a coil wafer system 11 in a DC electrical device (induction power supply, signal processing of electrical devices) The coil wafer system 11 is internally provided with a central processing circuit coil wafer 110, a large high speed circuit coil wafer 111, a large low speed circuit coil wafer 112, a small high speed circuit coil wafer 113, and a small low speed circuit coil wafer 114. The central processing unit coil wafer 110 is electrically connected to the large high speed circuit coil wafer 111 and the small high speed circuit coil wafer 113 (high speed wafer signal control), and the central processing circuit coil wafer 110 is also associated with the large low speed circuit. The coil wafer 112 and the small low-speed circuit coil wafer 114 are electrically connected by signals (low-speed wafer signal control), so that the central processing circuit coil wafer 110 can perform general signal control on a plurality of high-speed circuit chips and a plurality of low-speed circuit chips to perform The function of the electrical device.
請參閱第5圖所示,該中央處理器電路線圈晶片110內部係由一上層中央處理器線圈晶片1101(感應晶片)及一下層中央處理器電路晶片1102(CPU晶片)組成雙層中央處理器晶片供電物理與電路結構,其中,該上層中央處理器線圈晶片1101經由該中央處理器電路線圈晶片110之雙層晶片供電結構內部,可與該下層中央處理器電路晶片1102電氣連接(以電源電氣連接)。該上層中央處理器線圈晶片1101可接受電氣裝置外部之直流電力經逆變器03逆變後再轉換成直流電能,該上層中央處理器線圈晶片1101將直流電能經由該中央處理器電路線圈晶片110雙層晶片供電 結構內部,直接並穩定地供電予下層中央處理器電路晶片1102使用(中央處理器線圈晶片1101供電)。此外,該上層中央處理器線圈晶片1101與該下層中央處理器電路晶片1102可機械連接及電氣連接以作線圈晶片供電,該上層中央處理器線圈晶片1101與該下層中央處理器電路晶片1102亦可機械分離及電氣分離以作線圈晶片更換(即中央處理器線圈晶片1101可置換)。 Referring to FIG. 5, the central processing unit coil wafer 110 is internally composed of an upper layer central processing unit coil chip 1101 (sensing chip) and a lower layer central processing unit circuit chip 1102 (CPU chip). The chip-powered physical and circuit structure, wherein the upper-layer central processor coil chip 1101 is electrically connected to the lower-layer central processor circuit chip 1102 via the dual-layer chip power supply structure of the central processing circuit coil wafer 110 (to the power supply electrical connection). The upper central processing unit coil wafer 1101 can receive DC power external to the electrical device and then convert it into DC power by inverter 03, and the upper central processing unit coil 1101 passes DC power through the central processing circuit coil wafer 110. Double layer chip power supply Inside the structure, power is directly and stably supplied to the lower layer central processing unit circuit 1102 (powered by the central processing unit coil chip 1101). In addition, the upper central processing unit coil chip 1101 and the lower central processing unit circuit 1102 can be mechanically and electrically connected to supply power to the coil, and the upper central processing unit coil 1101 and the lower central processing circuit 1102 can also be used. Mechanical separation and electrical separation for coil wafer replacement (ie, central processor coil wafer 1101 can be replaced).
請參閱第6圖所示,該大型高速電路線圈晶片111內部係由 一上層第一高速線圈晶片1111(感應晶片)及一下層大型高速電路晶片1112(一般高速電路晶片)組成雙層大型高速晶片供電物理與電路結構,其中,該上層第一高速線圈晶片1111經由該大型高速電路線圈晶片111之雙層晶片供電結構內部,可與該下層大型高速電路晶片1112電氣連接(以電源電氣連接)。該上層第一高速線圈晶片1111可接受該大型高速電路線圈晶片111外部之電源(即中央處理器線圈晶片1101感應供電)作電能感應(第一高速線圈晶片1111感應電能)並轉換成直流電能,該上層第一高速線圈晶片1111將直流電能經由該大型高速電路線圈晶片111雙層晶片供電結構內部,直接並穩定地供電予下層大型高速電路晶片1112使用(第一高速線圈晶片1111供電)。除此之外,該上層第一高速線圈晶片1111與該下層大型高速電路晶片1112可機械連接及電氣連接以作線圈晶片感應(第一高速線圈晶片1111感應)與供電,該上層第一高速線圈晶片1111與該下層大型高速電路晶片1112亦可機械分離及電氣分離以作線圈晶片更換(即第一高速線圈晶片1111可置換)。 Referring to FIG. 6, the inside of the large high-speed circuit coil wafer 111 is An upper first high speed coil wafer 1111 (inductive wafer) and a lower large high speed circuit wafer 1112 (generally high speed circuit wafer) constitute a double layer large high speed wafer power supply physical and circuit structure, wherein the upper first high speed coil wafer 1111 passes through the The double-layer wafer power supply structure of the large high-speed circuit coil wafer 111 can be electrically connected to the lower large-sized high-speed circuit chip 1112 (electrically connected by a power source). The upper first high speed coil wafer 1111 can receive power from the outside of the large high speed circuit coil wafer 111 (ie, the central processing unit coil wafer 1101 is powered) (electrical induction by the first high speed coil wafer 1111) and converted into direct current power. The upper first high-speed coil wafer 1111 directly and stably supplies power to the lower large-sized high-speed circuit wafer 1112 (the first high-speed coil wafer 1111 is supplied with power) via the large-sized high-speed coil wafer 111 in the double-layer wafer power supply structure. In addition, the upper first high speed coil wafer 1111 and the lower large high speed circuit wafer 1112 can be mechanically and electrically connected for coil wafer sensing (first high speed coil wafer 1111 sensing) and power supply, the upper first high speed coil The wafer 1111 and the lower large-sized high-speed circuit wafer 1112 can also be mechanically separated and electrically separated for coil wafer replacement (ie, the first high-speed coil wafer 1111 can be replaced).
另外請參閱第8圖所示,該小型高速電路線圈晶片113內部 係由一上層第二高速線圈晶片1131(感應晶片)及一下層小型高速電路晶片1132(一般高速電路晶片)組成雙層小型高速晶片供電物理與電路結構,其中,該上層第二高速線圈晶片1131經由該小型高速電路線圈晶片113之雙層晶片供電結構內部,可與該下層小型高速電路晶片1132電氣連接(以電源電氣連接)。該上層第二高速線圈晶片1131可接受該小型高速電路線圈晶片113外部之電源(即中央處理器線圈晶片1101感應供電)作電能感應(第二高速線圈晶片1131感應電能)並轉換成直流電能,該上層第二高速線圈晶片1131將直流電能經由該小型高速電路線圈晶片113雙層晶片供電結構內部,直接並穩定地供電予下層小型高速電路晶片1132使用(第二高速線圈晶片1131供電)。此外,該上層第二高速線圈晶片1131與該下層小型高速電路晶片1132可機械連接及電氣連接以作線圈晶片感應(第二高速線圈晶片1131感應)與供電,該上層第二高速線圈晶片1131與該下層小型高速電路晶片1132亦可機械分離及電氣分離以作線圈晶片更換(即第二高速線圈晶片1131可置換)。 In addition, please refer to FIG. 8 , the inside of the small high-speed circuit coil wafer 113 The upper layer second high speed coil wafer 1131 (sensing wafer) and the lower layer small high speed circuit chip 1132 (general high speed circuit wafer) are composed of a double layer small high speed wafer power supply physical and circuit structure, wherein the upper second high speed coil wafer 1131 The low-layer high-speed circuit chip 1132 can be electrically connected to the lower-layer small-speed high-speed circuit chip 1132 (electrically connected by a power source) via the small-layer wafer power supply structure of the small high-speed circuit coil wafer 113. The upper second high speed coil wafer 1131 can receive power from the outside of the small high speed circuit coil chip 113 (ie, the central processing unit coil chip 1101 inductively supplies power) for power induction (the second high speed coil wafer 1131 inductive power) and converts it into DC power. The upper second high-speed coil wafer 1131 directly and stably supplies power to the lower small-sized high-speed circuit wafer 1132 via the small-sized high-speed coil wafer 113 in the double-layer wafer power supply structure (the second high-speed coil wafer 1131 supplies power). In addition, the upper second high speed coil wafer 1131 and the lower small high speed circuit wafer 1132 can be mechanically and electrically connected for coil wafer sensing (second high speed coil wafer 1131 sensing) and power supply, and the upper second high speed coil wafer 1131 and The lower small high speed circuit chip 1132 can also be mechanically separated and electrically separated for coil wafer replacement (ie, the second high speed coil wafer 1131 can be replaced).
請參閱第7圖所示,該大型低速電路線圈晶片112內部係由 一上層第一低速線圈晶片1121(感應晶片)及一下層大型低速電路晶片1122(一般低速電路晶片)組成雙層大型低速晶片供電物理與電路結構,其中,該上層第一低速線圈晶片1121經由該大型低速電路線圈晶片112之雙層晶片供電結構內部,可與該下層大型低速電路晶片1122電氣連接(以電源電氣連接)。該上層第一低速線圈晶片1121可接受該大型低速電路線圈晶片112外部之電源(即第一高速線圈晶片1111感應供電)作電能感應(第一低速線圈晶片1121感應電能)並轉換成直流電能,該上層第一低速 線圈晶片1121將直流電能經由該大型低速電路線圈晶片112雙層晶片供電結構內部,直接並穩定地供電予下層大型低速電路晶片1122使用(第一低速線圈晶片1121供電)。除此之外,該上層第一低速線圈晶片1121與該下層大型低速電路晶片1122可機械連接及電氣連接以作線圈晶片感應(第一低速線圈晶片1121感應)與供電,該上層第一低速線圈晶片1121與該下層大型低速電路晶片1122亦可機械分離及電氣分離以作線圈晶片更換(即第一低速線圈晶片1121可置換)。 Referring to FIG. 7, the inside of the large low-speed circuit coil wafer 112 is An upper first low speed coil wafer 1121 (inductive wafer) and a lower layer large low speed circuit wafer 1122 (generally low speed circuit wafer) constitute a double layer large low speed wafer power supply physical and circuit structure, wherein the upper first low speed coil wafer 1121 passes through the The double-layer wafer power supply structure of the large low-speed circuit coil wafer 112 can be electrically connected to the lower-layer large-scale low-speed circuit chip 1122 (electrically connected by a power source). The upper first low speed coil wafer 1121 can receive power supply external to the large low speed circuit coil wafer 112 (ie, the first high speed coil wafer 1111 is inductively supplied) for electric energy induction (first low speed coil wafer 1121 inductive power) and converted into direct current power. The upper first low speed The coil wafer 1121 directly and stably supplies power to the lower large-sized low-speed circuit wafer 1122 (powered by the first low-speed coil wafer 1121) via the large-sized low-speed circuit coil wafer 112 inside the double-layer wafer power supply structure. In addition, the upper first low speed coil wafer 1121 and the lower large low speed circuit wafer 1122 can be mechanically and electrically connected for coil wafer sensing (first low speed coil wafer 1121 sensing) and power supply, the upper first low speed coil. The wafer 1121 and the lower large-sized low-speed circuit wafer 1122 can also be mechanically separated and electrically separated for coil wafer replacement (ie, the first low-speed coil wafer 1121 can be replaced).
再者,請參閱第9圖所示,該小型低速電路線圈晶片114 內部係由一上層第二低速線圈晶片1141(感應晶片)及一下層小型低速電路晶片1142(一般低速電路晶片)組成雙層小型低速晶片供電物理與電路結構,其中,該上層第二低速線圈晶片1141經由該小型低速電路線圈晶片114之雙層晶片供電結構內部,可與該下層小型低速電路晶片1142電氣連接(以電源電氣連接)。該上層第二低速線圈晶片1141可接受該小型低速電路線圈晶片114外部之電源(即第二高速線圈晶片1131感應供電)作電能感應(第二低速線圈晶片1141感應電能)並轉換成直流電能,該上層第二低速線圈晶片1141將直流電能經由該小型低速電路線圈晶片114雙層晶片供電結構內部,直接並穩定地供電予下層小型低速電路晶片1142使用(第二低速線圈晶片1141供電)。此外,該上層第二低速線圈晶片1141與該下層小型低速電路晶片1142可機械連接及電氣連接以作線圈晶片感應(第二低速線圈晶片1141感應)與供電,該上層第二低速線圈晶片1141與該下層小型低速電路晶片1142亦可機械分離及電氣分離以作線圈晶片更換(即第二低速線圈晶片1141可置換)。 Furthermore, please refer to FIG. 9 , the small low speed circuit coil wafer 114 The internal system consists of an upper second low-speed coil wafer 1141 (inductive wafer) and a lower-layer small low-speed circuit wafer 1142 (generally low-speed circuit wafer) to form a double-layer small low-speed wafer power supply physical and circuit structure, wherein the upper second low-speed coil wafer 1141 is electrically connected to the lower layer small low-speed circuit wafer 1142 via the dual-layer wafer power supply structure of the small low-speed circuit coil wafer 114 (electrically connected by a power source). The upper second low speed coil wafer 1141 can receive power supply external to the small low speed circuit coil wafer 114 (ie, the second high speed coil wafer 1131 is inductively supplied) for power induction (the second low speed coil wafer 1141 inductive energy) and convert it into DC power. The upper second low speed coil wafer 1141 directly and stably supplies power to the lower small low speed circuit wafer 1142 (powered by the second low speed coil wafer 1141) via the small low speed circuit coil 114 in the double layer wafer power supply structure. In addition, the upper second low speed coil wafer 1141 and the lower small low speed circuit wafer 1142 are mechanically and electrically connected for coil wafer sensing (second low speed coil wafer 1141 sensing) and power supply, and the upper second low speed coil wafer 1141 and The lower layer small low speed circuit wafer 1142 can also be mechanically separated and electrically separated for coil wafer replacement (ie, the second low speed coil wafer 1141 can be replaced).
由此,本項發明創作提出一直流電氣裝置可設一線圈晶片 系統11,使得該線圈晶片系統11內部之該中央處理器電路線圈晶片110利用其雙層中央處理器晶片供電結構可作供電(中央處理器線圈晶片供電予中央處理器電路晶片),該大型高速電路線圈晶片111、該小型高速電路線圈晶片113利用其雙層高速晶片供電結構可作感應供電(高速線圈晶片感應電能、高速線圈晶片供電予高速電路晶片),而該大型低速電路線圈晶片112、該小型低速電路線圈晶片114利用其雙層低速晶片供電結構亦可作感應供電(低速線圈晶片感應電能、低速線圈晶片供電予低速電路晶片)。 如此,運用本項發明創作之「直流電力無線晶片」,令一直流電氣裝置即能以內部之線圈晶片供電予電路晶片使用,該電氣裝置電路晶片工作無需額外之直流到直流轉換電路或電源佈線,因而不致於發生直流電氣裝置經常使用之直流到直流轉換電路與電源佈線佔據電氣裝置內部相當空間之情形。 Therefore, the creation of the invention proposes that a coil device can be provided for the current electrical device. System 11 such that the central processor circuit coil wafer 110 within the coil wafer system 11 can be powered by its dual layer central processor chip power supply structure (the central processor coil wafer is powered to the central processor circuit chip), which is a large high speed The circuit coil wafer 111 and the small high-speed circuit coil wafer 113 can be used for inductive power supply (high-speed coil wafer induction power, high-speed coil wafer power supply to high-speed circuit wafer) by using the double-layer high-speed chip power supply structure, and the large low-speed circuit coil wafer 112, The small low-speed circuit coil wafer 114 can also be used for inductive power supply using its dual-layer low-speed wafer power supply structure (low-speed coil wafer induction power, low-speed coil wafer power supply to low-speed circuit wafers). Thus, by using the "DC power wireless chip" created by the invention, the DC device can be powered by the internal coil chip, which does not require an additional DC-to-DC conversion circuit or power supply wiring. Therefore, the DC-to-DC conversion circuit and the power supply wiring frequently used in the DC electric device do not occupy a considerable space inside the electric device.
上列詳細說明係針對本項發明創作之可行實施例的具 體說明,惟該等實施例並非用以限制本創作之專利範圍,凡未脫離本項發明創作技藝精神所為之等效實施或變更,例如:等變化之等效性實施例,均應包含於本創作之專利範圍中。 The detailed description above is for a possible embodiment of the inventive creation It is to be understood that the examples are not intended to limit the scope of the invention, and that equivalents or equivalents, such as equivalent variations, should be included in the embodiments of the invention. The scope of this creation patent.
Claims (6)
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TW104124699A TWI625023B (en) | 2015-07-30 | 2015-07-30 | DC power wireless chip |
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TW104124699A TWI625023B (en) | 2015-07-30 | 2015-07-30 | DC power wireless chip |
Publications (2)
Publication Number | Publication Date |
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TW201705648A TW201705648A (en) | 2017-02-01 |
TWI625023B true TWI625023B (en) | 2018-05-21 |
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TW104124699A TWI625023B (en) | 2015-07-30 | 2015-07-30 | DC power wireless chip |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04303274A (en) * | 1991-03-29 | 1992-10-27 | Mitsubishi Electric Corp | One-chip microcomputer |
TW200623794A (en) * | 2004-12-31 | 2006-07-01 | Dai-Li Jung | Emergency power supply unit for mobile phone |
TW200931228A (en) * | 2008-01-04 | 2009-07-16 | Hon Hai Prec Ind Co Ltd | Power control circuit |
TW201202903A (en) * | 2010-07-06 | 2012-01-16 | Giga Byte Tech Co Ltd | Portable electronic device |
-
2015
- 2015-07-30 TW TW104124699A patent/TWI625023B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04303274A (en) * | 1991-03-29 | 1992-10-27 | Mitsubishi Electric Corp | One-chip microcomputer |
TW200623794A (en) * | 2004-12-31 | 2006-07-01 | Dai-Li Jung | Emergency power supply unit for mobile phone |
TW200931228A (en) * | 2008-01-04 | 2009-07-16 | Hon Hai Prec Ind Co Ltd | Power control circuit |
TW201202903A (en) * | 2010-07-06 | 2012-01-16 | Giga Byte Tech Co Ltd | Portable electronic device |
Also Published As
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TW201705648A (en) | 2017-02-01 |
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