TWI624820B - 顯示器 - Google Patents
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- TWI624820B TWI624820B TW106132164A TW106132164A TWI624820B TW I624820 B TWI624820 B TW I624820B TW 106132164 A TW106132164 A TW 106132164A TW 106132164 A TW106132164 A TW 106132164A TW I624820 B TWI624820 B TW I624820B
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000013307 optical fiber Substances 0.000 claims description 6
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2085—Special arrangements for addressing the individual elements of the matrix, other than by driving respective rows and columns in combination
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/161—Semiconductor device sensitive to radiation without a potential-jump or surface barrier, e.g. photoresistors
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/02—Composition of display devices
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0202—Addressing of scan or signal lines
- G09G2310/0221—Addressing of scan or signal lines with use of split matrices
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0297—Special arrangements with multiplexing or demultiplexing of display data in the drivers for data electrodes, in a pre-processing circuitry delivering display data to said drivers or in the matrix panel, e.g. multiplexing plural data signals to one D/A converter or demultiplexing the D/A converter output to multiple columns
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- G09G2310/00—Command of the display device
- G09G2310/06—Details of flat display driving waveforms
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- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
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- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/028—Generation of voltages supplied to electrode drivers in a matrix display other than LCD
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Abstract
一種顯示器,包括顯示面板。顯示面板具有多個顯示區塊,其中各個顯示區塊包括光轉換電路、畫素陣列及資料電壓選擇電路。光轉換電路接收光脈衝信號,且具有上拉電路及下拉電路,其中上拉電路與下拉電路耦接於系統高電壓與系統低電壓之間,且上拉電路與下拉電路依據光脈衝信號輸出系統高電壓或系統低電壓以形成電壓脈衝信號。資料電壓選擇電路耦接光轉換電路與畫素列陣,且接收交流波形電壓,以依據電壓脈衝信號提供資料信號至畫素陣列。
Description
本發明是有關於一種顯示器,且特別是有關於一種使用光信號的顯示器。
在現在,顯示器朝著大尺寸且高解析度發展,因而遇到了兩個需要解決的問題:1. 顯示面板的走線阻抗隨著顯示面板的尺寸變大而隨之提升,所造成顯示面板信號的失真(distortion);2. 隨著顯示面板的解析度提高,單列掃線(scan line)的充電時間也跟著被壓縮,目前造成資料驅動器的充電能力可能無法滿足顯示面板的充電需求,亦即畫素可能沒有足夠的時間充電至目標電壓,使得畫素無法完整地顯示不同灰階變化。因此,如何解決上述問題則成為設計大尺寸顯示面板的一個重點課題。
本發明提供一種顯示器,可避免信號因阻抗過高而失真,並且可使畫素具有充份的充電時間。
本發明的顯示器,包括顯示面板。顯示面板具有多個顯示區塊,其中各個顯示區塊包括光轉換電路、畫素陣列及資料電壓選擇電路。光轉換電路接收光脈衝信號,且具有上拉電路及下拉電路,其中上拉電路與下拉電路耦接於系統高電壓與系統低電壓之間,且上拉電路與下拉電路依據光脈衝信號輸出系統高電壓或系統低電壓以形成電壓脈衝信號。資料電壓選擇電路耦接光轉換電路與畫素列陣,且接收交流波形電壓,以依據電壓脈衝信號提供資料信號至畫素陣列。
基於上述,本發明實施例的顯示器,由於光脈衝信號不是由電極(或導線)所傳送,因此沒有信號衰減的問題。並且,透過將顯示面板分區塊且同時進行資料寫入,因此可改善寫入時間不足的問題。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
圖1為依據本發明一實施例的顯示器的系統示意圖。請參照圖1,在本實施例中,顯示器10包括位置驅動器11、電源供應器13、資料驅動器15及顯示面板100。位置驅動器11耦接顯示面板100,以提供多個閘極驅動信號X1~Xm及多個開關信號Y1~Yn至顯示面板100,其中m及n分別為一正整數。
電源供應器13耦接顯示面板100,以提供交流波形電壓Ramp、系統高電壓VDD及系統低電壓VSS至顯示面板100,其中交流波形電壓Ramp可以為正弦波、方波、三角波及鋸齒波的其中之一。資料驅動器15耦接顯示面板100,以提供多個光脈衝信號LP1~LPx,其中x為一正整數。
顯示面板100具有多個顯示區塊(如BD1~BD4),其中光脈衝信號LP1~LPx的數量對應顯示區塊(如BD1~BD4)的數量,亦即x可等於顯示區塊(如BD1~BD4)的數量。各個顯示區塊(如BD1~BD4)包括光轉換電路110、資料電壓選擇電路120、多工電路130及畫素陣列140。
光轉換電路110接收對應的光脈衝信號(如LP1~LPx),且具有上拉電路111及下拉電路113。上拉電路111與下拉電路113耦接於系統高電壓VDD與系統低電壓VSS之間,且上拉電路111與下拉電路113依據對應的光脈衝信號(如LP1~LPx)輸出系統高電壓VDD或系統低電壓VSS以形成對應的電壓脈衝信號(如VP1~VP4)。
資料電壓選擇電路120耦接光轉換電路110,且接收交流波形電壓Ramp及對應的電壓脈衝信號(如VP1~VP4),以依據對應的電壓脈衝信號(如VP1~VP4)提供對應的資料信號(如XDD1~XDD4)。多工電路130耦接資料電壓選擇電路120及畫素陣列140,且接收對應的資料信號(如XDD1~XDD4)及多個開關信號Y1~Yn,以依據開關信號Y1~Yn將對應的資料信號(如XDD1~XDD4)依序提供畫素陣列140中的各行畫素(稍後說明)。畫素陣列140接收閘極驅動信號X1~Xm,以逐列開啟多個畫素(稍後說明)。依據上述,n對應畫素陣列140中的行數,m對應畫素陣列140中的列數,並且閘極驅動信號X1~Xm及開關信號Y1~Yn相互搭配以選擇畫素陣列140中的寫入位置(即寫入對應位置的畫素)。
依據上述,由於光脈衝信號LP1~LPx不是由電極(或導線)所傳送,因此可改善信號衰減的問題。並且,透過將顯示面板分區塊且同時進行資料寫入,因此可改善寫入時間不足的問題。
圖2為依據本發明一實施例的顯示面板的電路示意圖。請參照圖1及圖2,顯示面板100a用以說明顯示面板100,其中相同或相似的元件使用相同或相似的標號。在本實施例,顯示區塊(如BD1~BD4)的電路結構大致相同,因此在此以顯示區塊BD1為例以說明,而其他顯示區塊(如BD2~BD4)的電路結構可參照顯示區塊BD1的說明而理解。
在本實施例中,光轉換電路110a的上拉電路111a包括電晶體M1(對應第一電晶體)。電晶體M1具有接收系統高電壓VDD的第一端、接收系統高電壓VDD的控制端、以及耦接對應的電壓脈衝信號VP1的第二端。
光轉換電路110a的下拉電路113a包括光敏電阻RPH、電晶體M2及M3(對應第二電晶體及第三電晶體)。電晶體M2具有接收系統高電壓VDD的第一端、接收系統高電壓VDD的控制端、以及第二端。電晶體M3具有耦接對應的電壓脈衝信號VP1的第一端、耦接電晶體M2的第二端的控制端、以及接收系統低電壓VSS的第二端。光敏電阻RPH耦接於系統低電壓VSS與電晶體M3的控制端之間,並且接收對應的光脈衝信號(LP1~LP4)。
當光敏電阻RPH接收到對應的光脈衝信號(LP1~LP4)時,光敏電阻RPH會呈現低阻抗,以致於電晶體M3會不導通,而對應的電壓脈衝信號VP1的電壓準位會大致為系統高電壓VDD;當光敏電阻RPH未接收到對應的光脈衝信號(LP1~LP4)時,光敏電阻RPH會呈現高阻抗,以致於電晶體M3會導通,而對應的電壓脈衝信號VP1的電壓準位會大致為系統低電壓VSS。
依據上述,電晶體M1耦接成電晶體二極體,亦即上拉電路111a會利用系統高電壓VDD上拉對應的電壓脈衝信號VP1~VP4。而下拉電路113a會對應光敏電阻RPH是否接收到對應的光脈衝信號LP1決定是否利用系統低電壓VSS下拉對應的電壓脈衝信號VP1,亦即下拉電路113a接收對應的光脈衝信號LP1以決定是否利用系統低電壓VSS下拉對應的電壓脈衝信號VP1。
由於上拉電路111a會利用系統高電壓VDD上拉對應的電壓脈衝信號VP1,為了使對應的電壓脈衝信號VP1能被下拉,下拉電路113a的下拉強度會高於上拉電路111a的上拉強度,亦即電晶體M3的通道的長寬比會高於電晶體M1的通道的長寬比。並且,為了符合下拉電路113a的阻抗反應速度,光敏電阻RPH的材質可以鎂參雜的氧化鋅(Zinc oxide),其阻抗上升時間約為10奈秒(ns),阻抗下降時間約為150奈秒(ns),但本發明實施例不以此為限。
資料電壓選擇電路120a包括資料電晶體MD1。資料電晶體MD1具有接收交流波形電壓Ramp的第一端、接收對應的電壓脈衝信號VP1的控制端、以及提供對應的資料信號XDD1的第二端。多工電路130a包括多個開關電晶體(如MX1~MX3),其中各個開關電晶體(如MX1~MX3)具有耦接至資料電壓選擇電路120a的第一端、接收對應的開關信號(如Y1~Y3)的控制端、以及耦接至畫素陣列140a的第二端。其中,開關信號(如Y1~Y3)最多致能其中之一,亦即開關電晶體(如MX1~MX3)可以為全部截止,並且在需要時僅導通開關電晶體(如MX1~MX3)的其中之一。
畫素陣列140a包括多個陣列排列的畫素PX(在此以3X3陣列為例)、多個源極線DL及多個閘極線GL。源極線DL依序耦接至資料電壓選擇電路130a中對應的開關電晶體(如MX1~MX3)的第二端,且分別耦接一行的畫素PX。閘極線GL接收依序致能的閘極驅動信號(如閘極驅動信號X1~X3),且分別耦接一列的畫素PX。
圖3為依據本發明一實施例的顯示面板的驅動波形示意圖。請參照圖1至圖3,在此同樣以顯示區塊BD1為例以說明,其中相同或相似元件使用相同或相似標號。在本實施例中,閘極驅動信號(如X1~X3)會依序致能,並且,在各個閘極驅動信號(如X1~X3)的致能期間(如PE1、PE2),開關信號(如Y1~Y3)會依序致能。其中,致能的閘極驅動信號(如X1~X3)與致能的開關信號(如Y1~Y3)會將資料信號XDD1傳送至選定的畫素PX。由於資料信號XDD1是受電壓脈衝信號VP1的影響,而電壓脈衝信號VP1是反應光脈衝信號LP1,因此寫入選定的畫素PX的電壓準位是受控於光脈衝信號LP1。
圖4為依據本發明另一實施例的顯示面板的電路示意圖。請參照圖2及圖4,顯示面板100b大致相同於顯示面板100a,其不同之處在於光轉換電路110b的下拉電路113b,其中相同或相似元件使用相同或相似標號。在本實施例中,以顯示區塊BD1為例,下拉電路113b包括光敏電阻RPH、電晶體M4及M5(對應第四電晶體及第五電晶體)。電晶體M4具有第一端、耦接電晶體M4的第一端的控制端、以及接收系統低電壓VSS的第二端。電晶體M5具有耦接電壓脈衝信號VP1的第一端、耦接電晶體M4的第一端的控制端、以及接收系統低電壓VSS的第二端。光敏電阻RPH耦接於系統高電壓VDD與電晶體M4的控制端之間。
圖5為依據本發明一實施例的顯示器的結構示意圖。請參照圖1、圖2及圖5,在本實施例中,顯示器10更包括依序配置的第一偏光層510、彩色濾波層520、主動陣列層530、第二偏光層540及多個光纖FBX。彩色濾波層520、主動陣列層530配置於第一偏光層510及第二偏光層540之間,用以形成光轉換電路110、資料電壓選擇電路120、多工電路130及畫素陣列140。
彩色濾波層520配置有彩色濾波片XCR及黑矩陣XBM。平面光LPX經由第二偏光層540、主動陣列層530、彩色濾波層520及第一偏光層510的光學處理後形成顯示光LDX。
光纖FBX配置於主動陣列層530與第二偏光層540之間,用以分別傳送對應的光脈衝信號(如LP1~LPx)至對應的光轉換電路110a的光敏電阻RPH。並且,沿著光穿透方向D1,光纖FBX被彩色濾波層520的黑矩陣XBM所覆蓋,以抑制光脈衝信號(LP1~LPx)對畫面的影響。
綜上所述,本發明實施例的顯示器,由於光脈衝信號不是由電極(或導線)所傳送,因此沒有信號衰減的問題。並且,透過將顯示面板分區塊且同時進行資料寫入,因此可改善寫入時間不足的問題。並且,傳送光脈衝信號的光纖可被彩色濾波層的黑矩陣所覆蓋,以抑制光脈衝信號對畫面的影響。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
10‧‧‧顯示器
11‧‧‧位置驅動器
13‧‧‧電源供應器
15‧‧‧資料驅動器
100、100a、100b‧‧‧顯示面板
110、110a、110b‧‧‧光轉換電路
111、111a‧‧‧上拉電路
113、113a、113b‧‧‧下拉電路
120、120a‧‧‧資料電壓選擇電路
130、130a‧‧‧多工電路
140、140a‧‧‧畫素陣列
510‧‧‧第一偏光層
520‧‧‧彩色濾波層
530‧‧‧主動陣列層
540‧‧‧第二偏光層
BD1~BD4‧‧‧顯示區塊
D1‧‧‧光穿透方向
DL‧‧‧源極線
FBX‧‧‧光纖
GL‧‧‧閘極線
LDX‧‧‧顯示光
LP1~LPx‧‧‧光脈衝信號
LPX‧‧‧平面光
M1~M5‧‧‧電晶體
MD1‧‧‧資料電晶體
MX1~MX3‧‧‧開關電晶體
PE1、PE2‧‧‧致能期間
PX‧‧‧畫素
Ramp‧‧‧交流波形電壓
RPH‧‧‧光敏電阻
VDD‧‧‧系統高電壓
VP1~VP4‧‧‧電壓脈衝信號
VSS‧‧‧系統低電壓
X1~Xm‧‧‧閘極驅動信號
XCR‧‧‧彩色濾波片
XBM‧‧‧黑矩陣
XDD1~XDD4‧‧‧資料信號
Y1~Yn‧‧‧開關信號
圖1為依據本發明一實施例的顯示器的系統示意圖。 圖2為依據本發明一實施例的顯示面板的電路示意圖。 圖3為依據本發明一實施例的顯示面板的驅動波形示意圖。 圖4為依據本發明另一實施例的顯示面板的電路示意圖。 圖5為依據本發明一實施例的顯示器的結構示意圖。
Claims (10)
- 一種顯示器,包括: 一顯示面板,具有多個顯示區塊,其中各該些顯示區塊包括: 一光轉換電路,接收一光脈衝信號,且具有一上拉電路及一下拉電路,其中該上拉電路與該下拉電路耦接於一系統高電壓與一系統低電壓之間,且該上拉電路與該下拉電路依據該光脈衝信號輸出該系統高電壓或該系統低電壓以形成一電壓脈衝信號; 一畫素陣列;以及 一資料電壓選擇電路,耦接該光轉換電路與該畫素列陣,且接收一交流波形電壓,以依據該電壓脈衝信號提供一資料信號至該畫素陣列。
- 如申請專利範圍第1項所述的顯示器,其中該上拉電路利用該系統高電壓上拉該電壓脈衝信號,且該下拉電路接收該光脈衝信號以決定是否利用該系統低電壓下拉該電壓脈衝信號。
- 如申請專利範圍第2項所述的顯示器,其中該下拉電路的下拉強度高於該上拉電路的上拉強度。
- 如申請專利範圍第2項所述的顯示器,其中該上拉電路包括: 一第一電晶體,具有接收該系統高電壓的一第一端、接收該系統高電壓的一控制端、以及耦接電壓脈衝信號的一第二端。
- 如申請專利範圍第4項所述的顯示器,其中該下拉電路包括: 一第二電晶體,具有接收該系統高電壓的一第一端、接收該系統高電壓的一控制端、以及一第二端; 一第三電晶體,具有耦接電壓脈衝信號的一第一端、耦接該第二電晶體的該第二端的一控制端、以及接收該系統低電壓的一第二端;以及 一光敏電阻,耦接於該系統低電壓與該第三電晶體的該控制端之間。
- 如申請專利範圍第4項所述的顯示器,其中該下拉電路包括: 一第四電晶體,具有一第一端、耦接該第四電晶體的該第一端的一控制端、以及接收該系統低電壓的一第二端; 一第五電晶體,具有耦接電壓脈衝信號的一第一端、耦接該第四電晶體的該第一端的一控制端、以及接收該系統低電壓的一第二端;以及 一光敏電阻,耦接於該系統高電壓與該第四電晶體的該控制端之間。
- 如申請專利範圍第1項所述的顯示器,其中該顯示面板更包括: 一第一偏光層及一第二偏光層; 一彩色濾波層及一主動陣列層,配置於該第一偏光層及該第二偏光層之間,用以形成該光轉換電路、該畫素陣列及該資料電壓選擇電路;以及 多個光纖,配置於該主動陣列層與該第二偏光層之間,用以分別傳送對應的光脈衝信號至對應的光轉換電路。
- 如申請專利範圍第7項所述的顯示器,其中該些光纖沿著一光穿透方向被該彩色濾波層的一黑矩陣所覆蓋。
- 如申請專利範圍第1項所述的顯示器,其中該畫素陣列包括: 多個陣列排列的畫素; 多個源極線,依序耦接至該資料電壓選擇電路,且分別耦接一行的畫素;以及 多個閘極線,接收依序致能的多個閘極驅動信號,且分別耦接一列的畫素。
- 如申請專利範圍第9項所述的顯示器,其中該顯示面板更包括一多工電路,耦接於該些源極線與該資料電壓選擇電路之間,且接收多個開關信號,以依序耦接該資料電壓選擇電路至該些源極線的其中之一。
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