TWI624096B - Organic light-emitting display device and method of manufacturing the same - Google Patents

Abstract

An organic light-emitting display device and a method of fabricating the same can improve electrical connection between a cathode and an auxiliary electrode, thereby reducing a resistance value of a cathode covering a plurality of sub-pixels, and the structure can also prevent side leakage current. The organic light emitting display device includes: a substrate comprising a display area and an edge area surrounding the display area, wherein a plurality of sub-pixels are arranged in an array, the sub-pixels comprise a light-emitting area and a non-light-emitting area around the light-emitting area; An auxiliary electrode in the region; an insulating unit having a first opening for exposing the auxiliary electrode; the first protruding pattern being located on the insulating unit, deep into the first opening, and overlapping the exposed auxiliary electrode And a cathode that directly contacts the exposed auxiliary electrode and overlaps the first convex pattern.

Description

Organic light emitting display device and method of manufacturing same

The present invention relates to an organic light emitting display device, and more particularly to an organic light emitting display device including an auxiliary electrode and a method of fabricating the same, to reduce the resistance value of a cathode covering a plurality of subpixels, thereby improving electrical properties between the cathode and the auxiliary electrode. Connect to prevent side leakage current.

With the development of information-oriented society, the demand for display devices capable of displaying images is increasing. A wide variety of display devices that are currently in use include, for example, liquid crystal displays, plasma display panels, and organic light emitting displays or organic light emitting display devices. Among these different display devices, corresponding display panels are included.

Among these display devices, since the organic light-emitting display device is a self-luminous device that does not require an independent light source unit, its design is advantageous in that it is light, thin, and has high color purity.

The above organic light emitting display device includes a light emitting diode (OLED) for realizing light emission. The organic light emitting diode comprises two different electrodes and a light emitting layer between the two electrodes. When electrons generated by any of the electrodes and holes generated by other electrodes are introduced into the light-emitting layer, the introduced holes and electrons combine with each other to form excitons (or excited photons). Light emission can be achieved by the generated excitons moving from the excited state to the ground state.

One type of organic light emitting display device is an active organic light emitting display device. In an active organic light-emitting display device, a plurality of organic light-emitting diodes are respectively included in a plurality of sub-pixels, and the sub-pixels are arranged in a matrix on a substrate; and a plurality of driving thin film transistors are respectively included in Among the plurality of sub-pixels, the organic light-emitting diode is controlled.

In the active organic light emitting display device, the organic light emitting diode includes first and second electrodes opposed to each other and an organic light emitting layer interposed between the electrodes. In each sub-pixel, the first electrode is patterned; the second electrode is integrated enough to cover the plurality of sub-pixels.

Hereinafter, an organic light-emitting display device of the prior art will be described.

FIG. 1 is a schematic diagram showing changes in luminance obtained by measuring an organic light-emitting display device from one side to the opposite side in the related art.

As shown in FIG. 1, it can be seen that the shape of the organic light-emitting display device in the prior art is a rectangular plane, and the brightness of the organic light-emitting display device of the prior art occurs when the brightness changes from one side to the other side are measured. In the case of unevenness, the brightness is minimized at the center between the opposite sides, and the brightness gradually becomes larger as the distance from one side (one side or the opposite side) is further. This means that as the distance from the edge increases or the distance from the center becomes smaller, the brightness gradually decreases.

After analyzing the cause of the luminance unevenness described above, it is known that in the organic light-emitting display device, the second electrode (for example, the upper electrode) of the organic light-emitting diode that covers the plurality of sub-pixels is formed due to material properties. Has a large resistance value. In fact, for the upper light-emitting device, since the thickness of the upper electrode is reduced, the resistance value thereof is made large. More specifically, although a constant voltage or a ground voltage is supplied to the edge of the second electrode, since the second electrode is relatively far from the voltage supply unit and relatively close to the center, the resistance value of the second electrode increases, and The voltage stability of the two electrodes will gradually decrease as the distance from the edge is further or closer to the center. This is even more important for large displays. Therefore, there is a case where there is a difference in luminance between different regions, as shown in FIG.

Since the viewer may easily perceive that a situation in which the display device of the prior art has a brightness difference occurs, it is necessary to solve such a problem.

In view of this, the present invention is intended to provide an organic light emitting display device and a method of fabricating the same, thereby substantially obscuring one or more problems caused by limitations and omissions in the prior art.

An object of the present invention is to provide an organic light emitting display device and a method of fabricating the same, and the organic light emitting display device includes an auxiliary electrode for reducing the resistance value of the cathode of the organic light emitting diode, and the cathode covers the plurality of subpixels In order to improve the electrical connection between the cathode and the auxiliary electrode.

The other advantages, objects, and features of the invention will be set forth in part in the description in the appended claims. The objectives and other advantages of the invention will be realized and attained by the <RTIgt;

According to one aspect, an undercut structure is provided in an insulating unit, and the auxiliary electrode and the cathode are selectively connectable to each other in a region defined by the undercut structure, whereby the brightness of the panel can be improved. Further, when such a structure is applied to a non-light-emitting region, side leakage current caused by, for example, a charge generating layer in the organic light-emitting diode can be prevented. In this application, the insulating unit may be a single layer structure or may be an insulating stack structure comprising at least 2 layers, preferably a plurality of insulating layers stacked on top of each other, such as an interlayer insulating layer, a protective film and/or an outer layer. coating. That is, the insulation unit can comprise an inter-layer insulation stack.

According to an example, an organic light emitting display device includes a substrate, an auxiliary electrode, an insulating unit, a first protruding pattern, and a cathode. The substrate includes a display area and an edge area surrounding the display area. A plurality of sub-pixels are arranged in a matrix in the display area, and the plurality of sub-pixels respectively comprise a light-emitting area and a non-light-emitting area located around the light-emitting area. The auxiliary electrode is provided in a non-light emitting region of the substrate. The insulating unit has a first opening for exposing a portion of the auxiliary electrode. The first protruding pattern is located on the insulating unit, and at least one surface of the first protruding pattern penetrates into the first opening to facilitate overlapping with a portion of the auxiliary electrode. The cathode contacts a portion of the auxiliary electrode that overlaps the first convex pattern.

According to another example, an organic light emitting display device includes a substrate, an auxiliary electrode, an insulating unit, a first protruding pattern, and a cathode. The substrate includes a display area and an edge area surrounding the display area. A plurality of sub-pixels are arranged in a matrix in the display area, and each of the sub-pixels respectively includes a light-emitting area and a non-light-emitting area surrounding the light-emitting area. The auxiliary electrode is located in a non-light emitting region of the plurality of subpixels. The insulating unit has a first opening that exposes a portion of the auxiliary electrode. The first protruding pattern is on the insulating unit, and the first protruding pattern penetrates into the first opening and overlaps the portion of the auxiliary electrode. The cathode is directly connected to a portion of the auxiliary electrode that overlaps the first convex pattern.

According to another example, an organic light emitting display device includes: a substrate including a display area and an edge area surrounding the display area, wherein the plurality of sub pixels are arranged in an array in the display area, and the subpixel includes a light emitting area and is located a non-light-emitting area around the light-emitting area; an auxiliary electrode located in the non-light-emitting area; an insulating unit having a first opening, the first opening exposing the auxiliary electrode; and a first protruding pattern on the insulating unit Drilling into the first opening and overlapping the exposed auxiliary electrode; and a cathode directly contacting the exposed auxiliary electrode and overlapping the first protruding pattern.

In other words, the first protruding pattern may protrude from the first opening of the insulating unit or overlap the first opening. That is, the first protruding pattern and the insulating unit may form an undercut structure. By these means, a gap can be formed between the auxiliary electrode and the protruding pattern. The cathode can thus be formed below the raised pattern. The cathode at this time may be part of a light-emitting diode of the device, and the organic light-emitting diode may be provided in the light-emitting region. The cathode can extend within the non-luminescent region. Therefore, the cathode can correspond to a plurality of sub-pixels. The insulating unit is preferably at least partially fabricated on the auxiliary electrode. The insulating unit and the protruding pattern can be made of the same material or different materials.

The organic light emitting display device may further include an organic light emitting layer on an upper surface of a portion of the auxiliary electrode not overlapping the first protruding pattern, and an insulating unit located in the light emitting region.

The cathode may be disposed on an upper surface of a portion of the auxiliary electrode overlapping the first convex pattern, and on the organic light-emitting layer disposed on an insulating unit located in the light-emitting region.

The organic light emitting display device may further include a second opening and a second protruding pattern on the insulating unit. The second opening is formed in an insulating unit in the non-light emitting region excluding the first opening. At least one surface of the second protruding pattern penetrates into a region of the second opening. Therefore, the second opening can be formed simultaneously with the same manufacturing step as the first opening.

The first raised pattern and the second raised pattern can be made in the same layer and/or in the same material. Therefore, the second protruding pattern and the first protruding pattern can be simultaneously produced by the same process steps.

The organic light emitting display device may further include a non-organic insulating layer under the second opening. The etching rate of the non-organic insulating layer is different from the etching rate of the lower insulating layer constituting the insulating unit.

The second opening may be along one side of the light emitting area. Preferably, the first opening and the second opening are respectively formed along different sides of the light-emitting area. Thus, the first aperture and the second aperture may each extend in different directions, for example substantially perpendicular to each other. Preferably, the first opening and/or the second opening are used to divide the organic light-emitting layer. For example, by forming the second opening by a conductive layer such as a charge generating layer among the plurality of light emitting layers, the leakage current can be further reduced without adding an additional pattern such as a barrier for dividing the light emitting layer between the respective pixels. . Actually, a first opening may be provided between a plurality of sub-pixels arranged in a vertical direction, and a second opening may be provided between a plurality of sub-pixels arranged in a horizontal direction. The bank width between the sub-pixels arranged in the horizontal direction may be smaller than the bank width between the sub-pixels arranged in the vertical direction.

The second opening can be shaped to surround the perimeter of the illuminated area. This has particular advantages for high resolution devices with very small bank widths.

The first protruding pattern may be a bank, and the bank has a first sub-opening above the auxiliary electrode. The first sub-opening is smaller than the first opening. That is, the first raised pattern and/or the second raised pattern may comprise partial banks.

The insulating unit may comprise a non-organic insulating layer and an organic insulating layer. The non-organic insulating layer and the organic insulating layer are sequentially stacked by the insulating unit close to one end of the substrate. This structure can also be referred to as an insulating stack (insulation stack).

The non-organic insulating layer may have a first opening and a second opening, and the organic insulating layer may have a first sub-opening and a second sub-opening. The first sub-opening and the second sub-opening are smaller than the first opening and the second opening, respectively. The first raised pattern and the second raised pattern are defined by an organic insulating layer that penetrates into the first opening and the second opening.

The non-organic insulating layer over the auxiliary electrode and the organic insulating layer may have a plurality of openings of the same diameter at the interface therebetween.

The organic light emitting display device may include a bank. This bank may have an opening in the illuminating area. The organic light emitting display device may include an organic light emitting diode including an anode, the organic light emitting layer and the cathode.

At least one of the first convex pattern and the second convex pattern may be an anode 傀儡 pattern in the same layer as the anode. The anode ruthenium pattern herein may be associated with a pattern which is formed in the same layer as the anode of the organic light-emitting diode and which is made of the same material as the anode of the organic light-emitting diode. Therefore, the anode ruthenium pattern can be formed in the same process step as the anode.

The anode 傀儡 pattern is electrically connected to the auxiliary electrode through a contact hole in the insulating unit. When the resistance value of the anode material can be lower than the resistance value of the cathode material, the resistance value of the cathode can be further reduced by the contact of the auxiliary electrode with the anode ruthenium pattern.

At least one of the first protruding pattern and the second protruding pattern may be an organic insulating layer.

The auxiliary electrode may be located in the same layer as an electrode constituting a thin film transistor in each sub-pixel.

The auxiliary electrode may be in the same layer as the one piece of the electrode in the edge region.

The insulating unit may have an open area for exposing a portion of the upper surface of the sheet electrode, and the open area may be defined by an opening in the non-organic insulating layer.

According to another example, a method of fabricating an organic light emitting display device includes: preparing a substrate, the substrate comprising a display area and an edge area surrounding the display area, wherein the plurality of sub-pixels are arranged in a matrix, and the sub-pixels are each a light-emitting region and a non-light-emitting region surrounding the light-emitting region; an auxiliary electrode is provided in the non-light-emitting region; an insulating unit is provided, and the insulating unit has a first opening for exposing a portion of the auxiliary electrode; Providing a first protruding pattern, at least one surface of the first protruding pattern penetrates into the first opening to facilitate covering the auxiliary electrode of the portion; and the upper surface of the auxiliary electrode is covered by the first protruding pattern a portion other than the portion of the auxiliary electrode forms an organic light-emitting layer; and a cathode is formed to cover the organic light-emitting layer and contact a portion of the auxiliary electrode covered by the first convex pattern.

The step of providing the insulating unit may include forming a second opening in the insulating unit other than the first opening in the non-light emitting region.

The providing the first protruding pattern may include forming a second protruding pattern on the insulating unit, and at least one surface of the second protruding pattern penetrates into a region of the second opening.

According to another aspect of the present invention, a method of fabricating an organic light emitting display device includes: preparing a substrate including a display area and an edge area surrounding the display area, wherein the plurality of sub pixels are arranged in a matrix in the display area, respectively The sub-pixel includes a light-emitting region and a non-light-emitting region surrounding the light-emitting region; an auxiliary electrode is provided in the non-light-emitting region, a thin film transistor is provided in each of the sub-pixels, and a sheet is provided in the edge region An electrode; a non-organic insulating layer and an organic insulating layer for covering the auxiliary electrode, the thin film transistor and the sheet electrode are sequentially formed, and then the non-organic insulating layer and the organic insulating layer are collectively removed to form a thin film a first contact hole of one of the electrodes of the transistor, and an organic insulating layer is removed to form an organic insulating layer opening; an anode is formed on the organic insulating layer, and the anode is connected to the thin film transistor through the first contact hole An electrode; forming a bank to cover a portion of the anode, the bank having an opening in the region of the opening of the organic insulating layer and in the light emitting region And using a photoresist pattern to selectively remove non-organic insulating layer to a sheet while the exposed electrode and the auxiliary electrode. Preferably, the organic insulating layer opening corresponds to the top of the auxiliary electrode. Preferably, the top of the auxiliary electrode and the top of the sheet electrode are further exposed.

According to another example, a method of fabricating an organic light emitting display device includes the steps of: preparing a substrate, the substrate comprising a display area and an edge area surrounding the display area, wherein a plurality of sub pixels are arranged in an array in the display area, and The sub-pixel includes a light-emitting region and a non-light-emitting region around the light-emitting region; an auxiliary electrode is formed in the non-light-emitting region; an insulating unit is formed on the auxiliary electrode; and a first convex pattern is formed on the insulating unit; Forming a first opening in the insulating unit, the first opening exposing the auxiliary electrode, wherein the first protruding pattern penetrates into the first opening and overlaps the exposed auxiliary electrode; and forms a cathode, and the cathode is in direct contact And the auxiliary electrode that is exposed and overlaps the first convex pattern.

In the process of forming the bank, the bank may penetrate into the opening of the organic insulating layer to correspond to and overlap the auxiliary electrode. The top of the sheet electrode and the top of the auxiliary electrode may be protected by a non-organic insulating layer.

The method further includes forming an organic light-emitting layer on the auxiliary electrode except for the portion overlapping the partition and the organic insulating layer. The method further includes a cathode that covers the organic light-emitting layer and thereby contacts the portion of the auxiliary electrode that is covered by the bank.

In the step of forming the anode, an anode ruthenium pattern may be formed on the organic insulating layer so as to penetrate into the opening of the organic insulating layer.

In the step of forming the first contact hole, a second contact hole may be further formed to be spaced apart from the first contact hole and to expose at least a portion of the auxiliary electrode. In the step of forming the anode ruthenium pattern, the anode ruthenium pattern may be connected to the top of the auxiliary electrode through the second contact hole.

The photoresist pattern may penetrate into an open area above the sheet electrode to be formed and an open area above the auxiliary electrode.

The foregoing description of the preferred embodiments of the present invention

Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

The following examples are merely illustrative, and the spirit of the invention may be fully conveyed by those skilled in the art. Therefore, the invention is not limited to the embodiments to be described below, but may be embodied in other forms. Moreover, in the drawings, for example, the size and thickness of the constituent elements of the device may be presented exaggerated for convenience. Throughout the specification, the same reference numerals will be used to refer to the same or similar constituent elements.

The advantages and features of the present invention, as well as the method of the present invention, can be more readily understood by referring to the detailed description of the embodiments below and the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete. The invention should be defined by the scope of the patent claims. Wherever possible, the same reference numerals,,,, In the drawings, the size and relative size of the various layers and the various regions may be exaggerated for clarity of the description.

It will be understood that when an element or layer is referred to as "on" another element or layer, the element or layer may be directly on the other element or layer, or one or more Component or intermediate layer. In contrast, when an element is referred to as being "directly on" another element, the <RTIgt;

Spatially relative terms such as "under", "lower", "lower", "above", "upper" and the like may be used to mean one component and/or feature as shown in the figure. Or the relationship between other components and or features. It will be understood that spatially relative terms are intended to encompass different orientations of the device as it is employed, in addition to the orientation depicted in the drawings. For example, when the elements in the figures are reversed, the elements referred to as "below" or "below" the other element may become "above" the other device. Thus, the exemplary term "lower" may encompass both an upward and a downward direction.

The terminology used herein is for the purpose of describing particular embodiments, and is not intended to The singular forms as used herein are intended to include the plural, unless the context clearly dictates otherwise. It is also to be understood that the terms "comprising" and """ The presence or addition of operations, operations, and/or components.

2 is a schematic diagram of an organic light emitting display device of the present invention, FIG. 3 is a circuit diagram of each subpixel illustrated in FIG. 2, and FIG. 4 is a schematic plan view of each subpixel of FIG.

First, in order to understand the structural configuration of a cross-sectional view to be described below, the spatial division and region definition of the organic light-emitting display device of the present invention will be described with reference to FIGS. 2 to 4.

As shown in FIGS. 2 to 4, the organic light-emitting display device of the present invention, which is designated by reference numeral 10, includes a substrate 100. The substrate 100 is polygonal, preferably rectangular. The substrate 100 has constituent elements on the substrate 100.

The substrate 100 is roughly divided into a central display area AA and an edge area located around the central display area AA. In the display area AA, a plurality of sub-pixels SP are arranged in a matrix. In the display area AA, each sub-pixel includes a light-emitting area EA and a non-light-emitting area NEA.

The sub-pixel SP is defined by the interleaved gate line GL and the data line DL. Further, a driving voltage line VDDL for receiving a driving voltage is further provided in the display area AA in the same direction as the data line DL, thereby driving a pixel circuit PC provided in each sub-pixel SP. The driving voltage line VDDL is connected to a driving thin film transistor D-Tr to constitute the pixel circuit PC.

A pixel circuit PC connected to the aforementioned connection line will now be described with reference to FIG. The pixel circuit PC includes a switching thin film transistor S-Tr disposed at an intersection of the gate line GL and the data line DL, and the driving thin film electrically disposed between the switching thin film transistor S-Tr and the driving voltage line VDDL. The crystal D-Tr, a light-emitting diode OLED connected to the driving thin film transistor D-Tr, and a storage capacitor Cst disposed between the gate and the drain (or source) of the driving thin film transistor D-Tr.

Here, the switching thin film transistor S-Tr is disposed in an area where the gate line GL and the data line DL intersect, and is used to select a corresponding sub-pixel. In addition, the driving thin film transistor D-Tr is used to drive the organic light emitting diode of the subpixel, that is, the organic light emitting diode selected by the switching thin film transistor S-Tr.

In addition, the edge region includes a gate driver GD for supplying a scan signal to the gate line GL, and a data driver DD for supplying a data signal to the data line DL. In addition, the driving voltage line VDDL can receive a driving voltage provided by a first power supply unit VDD in the edge region, or can also receive a driving voltage through the data driver DD.

When the thin film transistor is disposed in the display area AA, or when the thin film transistor is formed by attaching a film or any member having a printed circuit board to an edge region of the substrate 100, the gate described herein The driver GD and the data driver DD or the first power supply unit VDD may be buried directly in the edge region of the substrate 100. In either embodiment, the circuit drivers are disposed within an edge region around the display area; for this purpose, the display area AA can be defined to be located inside the edge of the substrate 100.

The gate driver GD sequentially supplies a scan signal to the plurality of gate lines GL. For example, the gate driver GD is a control for supplying a scan signal to the plurality of gate lines GL in response to a control signal (that is, for example, a signal received from a timing controller (not shown)). Circuit.

In addition, the data driver DD supplies a data signal to the data line DL1 selected from the plurality of data lines DL in response to a control signal (that is, a signal received from an external device such as a timing controller (not shown)). ~DLm. Whenever a scan signal is supplied to the gate lines GL1 GL GLn, the data signals supplied to the data lines DL1 DL DLm are supplied to the selected plurality of sub-pixels SP in response to the scan signals. Thereby, the voltage corresponding to the data signal charges the plurality of sub-pixels SP, so that the plurality of sub-pixels SP can emit light corresponding to the brightness of the voltage.

Meanwhile, the substrate 100 may be an insulating substrate, and the material thereof may be, for example, plastic, glass or ceramic. When the material of the substrate 100 is plastic, the thickness of the substrate 100 may be thin and the substrate 100 has flexibility to facilitate bending, but the material of the substrate 100 is not limited thereto. The substrate 100 can be made of metal, and the substrate 100 can have an insulating buffer layer on the side where the metal lines and an array are located.

In addition, a set of three or four sub-pixels SP, for example, respectively emitting light of different colors, may be defined as one pixel.

The sub-pixel SP is a unit in which a specific type of color filter is formed, or the sub-pixel SP is a unit in which a light-emitting diode emits a specific color of light. Although the color defined by the sub-pixel SP may include red (R), green (G), and blue (B), in some embodiments, the white W may be selectively added, and the present invention is not limited thereto. this.

The organic light emitting diode OLED is connected to the driving thin film transistor D-Tr at a first node A, and the organic light emitting diode comprises an anode formed in each subpixel, a cathode opposite the anode, and an anode. An organic light-emitting layer between the cathode and the cathode.

Meanwhile, the organic light-emitting display device 10 may be, for example, an up-emission type, a down-emission type, or a dual-emission type display device. At this time, in the case where the large-size display panel does not consider the light-emitting type of the display panel in the process of laying the cathode in one display region, the voltage drop of the cathode of the organic light-emitting diode may occur. Therefore, the present invention provides an auxiliary electrode 130 in the non-light-emitting region to directly contact the cathode, thereby preventing the voltage drop as described in FIG.

Here, the material of the auxiliary electrode 130 is metal, disposed in the same layer as the data line DL, and a contact point including the cathode (see reference numeral 1800b: the first opening on a node B of FIG. 4). Specifically, the auxiliary electrode 130 having good conductivity is connected to the individual sub-pixel or the cathode in the pixel, and the resistance value of the cathode can be reduced in the proceeding direction of the auxiliary electrode 130, thereby preventing the voltage drop of the cathode from the edge to The central part gradually deteriorated.

In the above example, although the auxiliary electrode 130 includes a first metal line 131 along the first direction of the gate line GL and a second metal line 132 along the second direction of the data line DL, the present invention Without being limited thereto, the auxiliary electrodes 130 may be arranged in only one of the directions.

Meanwhile, the auxiliary electrode 130 described above may be formed in the same layer as the data line DL, for example, in the same layer as an electrode constituting the thin film transistor. The auxiliary electrode 130 is patterned together with the data line DL or this electrode. The auxiliary electrode 130 may be formed of a single layer structure of copper, manganese, aluminum, silver or titanium, or may be formed of a multilayer structure in which the material is any combination of the foregoing materials. The auxiliary electrode 130 is connected to the cathode at the second node B, whereby it can be used to reduce the resistance value of the cathode.

Although the following embodiments exemplify the above-described light-emitting type organic light-emitting display device, the embodiment of the present invention is not limited to the upper light-emitting type organic light-emitting display device, but can be applied to all structures of the display device to prevent voltage drop of the cathode. .

In an embodiment to be described below, the organic light emitting display device may include at least some of the following components: a substrate 100 including a display area AA and an edge area surrounding the display area AA, and a plurality of sub-pixels SP in the display area AA are arranged in one a matrix, each sub-pixel comprising a light-emitting area EA and a non-light-emitting area NEA around the light-emitting area EA; a driving film transistor D-Tr provided in each of the sub-pixels SP on the substrate 100; A node A is connected to drive the thin film transistor D-Tr to cover the organic light emitting diode OLED of an anode 120 of the light emitting region EA; a cathode 122 extending through the display area AA; and an organic light emitting layer between the anode 120 and the cathode 122. 121; an auxiliary electrode 130 connected to a bottom portion of the cathode 122 of the second node B in the non-light emitting region NEA; and an insulating unit 1800 disposed between the driving film transistor D-Tr and the anode 120, the insulating unit 1800 has a difference Corresponding to a first contact hole 1800a and a first opening 1800b of the first node A and the second node B, the first contact hole 1800a and the first opening 1800b are respectively used to expose a part of the driving D-Tr film transistor 130 and the auxiliary electrode portion. Further, with respect to the first opening 1800b in the insulating unit 1800, the first opening 1800b has a convex pattern inside and thus has an undercut shape. The selective connection between the auxiliary electrode 130 and the cathode 122 can be achieved under the undercut structure produced.

Hereinafter, an organic light-emitting display device and a method of manufacturing the same according to various embodiments of the present invention will be described in detail with reference to the accompanying sectional drawings.

(First Embodiment)

FIG. 5 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

As shown in FIG. 5, the organic light-emitting display device of the present invention comprises: a substrate 100 comprising a plurality of sub-pixels SP arranged in a matrix and each sub-pixel SP comprising a light-emitting area EA and a non-light-emitting area NEA around the light-emitting area EA The display area AA and the edge area surrounding the display area AA; the auxiliary electrodes 130, 131 and 132 (shown in FIG. 4) provided in the non-light-emitting area NEA of the substrate 100; and the insulating unit 1800 having the auxiliary electrode 130 exposed therein The first opening 1800b. The first opening 1800b may completely expose the upper surface of the auxiliary electrode 130 or only a portion of the upper surface of the auxiliary electrode 130.

Further, a bank 150 is provided on the surface of the insulating unit 1800. The bank 150 is shaped such that at least a portion of the surface of the bank 150 extends laterally deep into the first opening 1800b, thereby overlapping a portion of the auxiliary electrode 130 in the region exposed by the first opening 1800b. A bank 150 may be provided on a side surface of the insulating unit 1800 in the first opening 1800b. The bank 150 here may be disposed only above the insulation unit 1800, or may be disposed above the insulation unit 1800 and a portion of the side wall as described above, so that the overlapping area between the bank 150 and the auxiliary electrode 130 is greater than the insulation unit. The area of overlap between 1800 and auxiliary electrode 130. The bank 150 may be vertically spaced from below the first opening 1800b. That is, there is a vertical gap between the bank 150 and the auxiliary electrode 130.

In the open region of the first opening 1800b that is not overlapped with the bank 150, the organic light-emitting layer 121 may be disposed on the upper surface of the auxiliary electrode 130, and then the cathode 122 is disposed such that the cathode 122 covers the organic light-emitting layer 121.

Since the organic light-emitting material is easily precipitated directly, only a small amount of the material in the organic light-emitting layer 121 enters the open region of the first opening 1800b overlapping the bank 150, so that almost no material is disposed in the organic light-emitting layer 121. Part of the auxiliary electrode 130 overlaps the bank 150. Therefore, the cathode 122 can enter a region on the auxiliary electrode 130 where the bank 150 overlaps the auxiliary electrode 130 and is not provided with the organic light-emitting layer 121, whereby the cathode 122 can be further associated with the auxiliary electrode 130, and the cathode 122 can be directly contacted with the auxiliary Electrode 130.

In the organic light-emitting display device of the present invention, a convex pattern formed on the auxiliary electrode 130 to form an undercut structure may be an outer coating layer 108 or an anode material layer. In addition to the above-described bank 150, other descriptions will be described below. Specific example. Meanwhile, the term "undercut" as used in the present invention means that the lower pattern to be removed is more than the upper pattern to be removed. Therefore, in the undercut structure, the area where the lower pattern is removed is large at the interface between the upper pattern and the lower pattern.

Specifically, in the case where the bank 150 is provided on a protective film 107 to form a convex pattern over the auxiliary electrode 130, the organic light-emitting layer 121 which is deposited without any mask can be formed without protruding. The area under which the bank 150 is located is sufficiently accumulated, and since the organic light-emitting layer 121 is very easily deposited straight, the thickness of the organic light-emitting layer 121 may be uneven. Therefore, although the organic light-emitting layer 121 may be uniformly formed on the upper surface of the partial auxiliary electrode 130 and the insulating unit 1800 not overlapping the light-emitting area EA of the bank 150, the organic light-emitting layer 121 may not be substantially disposed in the bank 150 is in a region overlapping the auxiliary electrode 130. In contrast, the cathode 122 formed by sputtering can be deposited on the auxiliary electrode 130, even under the protruding bank 150, because the metal particles deposited by diffuse reflection can be diffused along the The undercut area moves. That is, the cathode 122 is disposed on the upper surface of the portion of the auxiliary electrode 130 that overlaps the bank 150 deep in the first opening 1800b, and is disposed on the organic light-emitting layer 121 on the insulating unit 1800 in the light-emitting region EA. Therefore, the cathode 122, which is the upper electrode of the organic light-emitting diode, further contacts a portion of the auxiliary electrode 130 below the convex bank 150. By this contact portion, the resistance value of the cathode 122 can be reduced, and the voltage drop of the cathode 122 can also be prevented.

Meanwhile, the insulating unit 1800 can be formed by sequentially stacking a non-organic insulating layer as the protective film 107 and an organic insulating layer as the overcoat layer 108 from the side close to the substrate 100. For example, the protective film 107 may be an oxide layer, a nitride layer, or an oxynitride layer, and may be deposited as a single layer or a multilayer structure of these films. The outer coating layer 108 can be made of an organic material and has a thickness sufficient to planarize the protrusions or depressions on the surface; the outer coating layer 108 can also be formed by, for example, a photo acryl film (photo acryl) Film) made of organic film.

In the organic light-emitting display device of the first embodiment of the present invention, at the boundary between the protective film 107 and the overcoat layer 108 on the auxiliary electrode 130 of each sub-pixel, there are a plurality of openings having the same diameter, and the openings can be used. A first opening 1800b is defined. In the first embodiment described above, the protective film 107 and its overcoat layer 108 have no convex pattern due to the arrangement of the insulating unit 1800, and the bank 150 disposed on the overcoat layer 108 can serve as a convex pattern.

Further, the insulating unit 1800 has an opening area for exposing a portion of the upper surface of the one-piece electrode 230. This open area can be defined by an opening of the protective film 107 formed of a non-organic insulating layer.

The bank 150 here has an opening in the light-emitting area EA. In the light-emitting region EA, the organic light-emitting diode includes an anode 120, an organic light-emitting layer 121, and a cathode 122, and the anode 120, the organic light-emitting layer 121, and the cathode 122 may be sequentially disposed from a side close to the substrate 100.

Although the bank 150 of the structure of FIG. 5 protrudes from one side thereof and penetrates into the first opening 1800b of the insulating unit 1800 (during the right side of the drawing from the right side thereof into the first opening 1800b), the present invention Not limited to this. Portions of the bank 150 may penetrate into the first opening 1800b symmetrically or asymmetrically. In this case, all of the protrusions can prevent deposition of the organic light-emitting layer 121 but can allow deposition of the cathode 122.

Further, since the anode 120 is fabricated after the insulating unit 1800 (i.e., the protective film 107 and the overcoat layer 108) is formed, the bank 150 is not formed immediately after the insulating unit 1800 is fabricated. After the fabrication of the overcoat layer 108 is completed, the anode 120 can be fabricated in the light-emitting region EA; then, the bank 150 is disposed in a portion of the non-light-emitting region NEA that does not include the light-emitting region EA. Unlike the structure in which the auxiliary electrode is not provided in the prior art and the entire non-light-emitting region is covered by the bank, in the organic light-emitting display device of the present invention, the bank 150 is patterned over the auxiliary electrode 130 in the non-light-emitting region portion, so that The bank 150 will penetrate deeper into the first opening 1800b than the insulating unit 1800, whereby the first opening 1800b and the bank 150 in the insulating unit 1800 will form an undercut structure above the auxiliary electrode 130. In this case, since the bank 150 is formed after the overcoat layer 108 is formed, the bank 150 can cover not only the top of the overcoat layer 108 but also the side wall of the overcoat layer 108.

At the same time, in addition to the first opening 1800b, a first contact hole 1800a is formed in the insulating unit 1800. The first contact hole 1800a is defined by selectively removing the overcoat layer 108 and the protective film 107 to connect the anode 120 of the organic light emitting diode to a thin film transistor TFT therebelow. In this example, the thin film transistor TFT corresponds to the driving thin film transistor D-Tr of FIG. 3, and the electrode exposed to the first contact hole 1800a in the thin film transistor is a part of the source 106b.

Further, in the light-emitting region EA, the anode 120, the organic light-emitting layer 121, and the cathode 122 are sequentially disposed on the insulating unit 1800 to form an organic light-emitting diode. The anode 120 inside the first contact hole 1800a may be connected to the source 106b of the thin film transistor TFT under the first contact hole 1800a, the first contact hole 1800a may be located in a part of the non-light emitting area NEA, and the bank 150 may be located in the first contact hole 1800a. Inside the anode 120.

The structure below the insulation unit 1800 in Fig. 5 will now be explained.

The organic light emitting display device of the present invention comprises a thin film transistor TFT formed on a specific region on the substrate 100 and including an active layer 102, a gate 103 and a source 106b. In the above illuminating type, since light is emitted from the upper end of the anode 120, the thin film transistor TFT can be located in the light emitting region or the non-light emitting region. In the case of the following illuminating type, since the light emission may be limited to the electrode of the thin film transistor TFT, the thin film transistor may not be located in the light emitting region.

The active layer 102 can be an amorphous germanium layer, a poly germanium layer or an oxide semiconductor layer, and a buffer layer 101 can be provided between the substrate 100 and the active layer 102 to prevent foreign matter from being introduced into the active layer 102 from the substrate 100.

At the same time, a gate insulating layer 105 may be provided between the gate 103 and the active layer 102 to maintain electrical insulation.

Further, an interlayer insulating layer 104 may be further provided on the buffer layer 101 to cover the gate insulating layer 105 and the gate 103 stacked on the active layer 102.

The active layer 102 is exposed on a relatively opposite side of its portion to a contact hole made in the interlayer insulating layer 104 such that the source 106b and the drain 106a can be connected to opposite sides of the portion of the active layer 102.

At this time, the auxiliary electrode 130 is disposed in the same layer as the source 106b and the drain 106a, and the sheet electrode 230 is disposed in the same layer together with the auxiliary electrode 130 in the edge region of the substrate 100.

In order to receive the electrical signal, the sheet electrode 230 in the edge region may be bonded to, for example, an FPC layer; and for this purpose, the sheet electrode 230 may also include a revealing portion. As described above, in order to expose a part of the upper surface of the sheet electrode 230, the overcoat layer 108 and the bank 150 may be removed from the upper surface of the sheet electrode 230, but the protective film 107 formed of the non-organic insulating layer is not included.

Hereinafter, a method of manufacturing the organic light-emitting display device according to the first embodiment of the present invention will be described with reference to a process sectional view.

6A to 6E are process cross-sectional views of the organic light-emitting display device of FIG. 5, and FIG. 7 is a process flow diagram of the organic light-emitting display device of the present invention.

In the manufacturing procedure of the organic light-emitting display device of the present invention, it is important to carry out the process steps from the fabrication of the insulating unit, so that the relevant process details of the thin film transistor before the insulating unit is fabricated will be omitted below.

As shown in FIG. 6A, a buffer layer 101 is formed on the substrate 100, and an active layer 102 is formed in a specific region of the sub-pixel. Then, a gate insulating layer 105 and a gate 103 are sequentially formed on a specific portion above the active layer 102; a contact hole having opposite sides of a portion for exposing the active layer 102 is formed and the remaining of the active layer 102 may be covered Part of the interlayer insulating layer 104.

Next, a metal is deposited, and the deposited metal is selectively patterned to form a source 106b, a drain 106a, an auxiliary electrode 130, and a sheet electrode 230. The source 106b and the drain 106a are respectively connected to opposite sides of the active layer 102 exposed to the contact holes. The auxiliary electrode 130 is formed in the partial non-light-emitting area NEA and has the shape shown in FIG. The sheet electrode 230 is located in the edge region. Through this flow, a thin film transistor TFT including the active layer 102, the gate 103, the source 106b, and the drain 106a can be fabricated.

At this time, the source 106b of the thin film transistor TFT and the flat portion of the drain 106a, the auxiliary electrode 130, and the sheet electrode 230 are provided on the same layer on the interlayer insulating layer 104.

Next, a protective film 107 is formed on the interlayer insulating layer 104 including the thin film transistor TFT, the auxiliary electrode 130, and the sheet electrode 230. The protective film 107 may be made of a non-organic insulating material.

Subsequently, an overcoat layer 108 is formed on the protective film 107. The overcoat layer 108 can be made of an organic insulating material.

The overcoat layer 108 and the protective film 107 are defined by a photoresist pattern by using a photoresist (not shown) on the photoresist pattern, followed by exposure techniques and using a single mask. The development process is formed by patterning a photoresist. At this time, when the photoresist used is a positive photoresist, a portion of the mask for leaving all of the overcoat layer 108 and the protective film 107 is defined as a shield portion for removing only the overcoat layer 108 in the mask. The portion is defined as a half penetration portion, and a portion of the reticle for removing all of the overcoat layer 108 and the protective film 107 is defined as a penetration portion. Further, when the photoresist used is a negative photoresist, the shield portion and the penetrating portion are opposite to the shield portion and the penetrating portion of the positive photoresist.

Therefore, the photoresist pattern on the overcoat layer 108 completely exposes a portion of the upper surface of the source 106b and remains slightly around the fully exposed portion of the source 106b and corresponds to the sheet electrode 230 and the auxiliary electrode 130. On the area.

By using the photoresist pattern, the exposed portion of the overcoat layer 108 and the protective film 107 are first removed, as shown in Fig. 6B. Thereby, the first contact hole 1800a is formed in a region where the photoresist pattern is completely exposed.

Next, after removing the sparsely remaining photoresist pattern, the exposed portion of the overcoat layer 108 above the auxiliary electrode 130 and the tab electrode 230 and located around the first contact hole 1800a is removed. Thereby, the insulating unit 1800 including the overcoat layer 108 and the protective film 107 can be formed. At this time, an overcoat opening 108b having a diameter h1 which is approximately equal to or smaller than the width of the auxiliary electrode 130 is formed over the auxiliary electrode 130, and a portion of the overcoat layer 108 above the sheet electrode 230 is removed. At this time, the upper side of the auxiliary electrode 130 and the upper side of the sheet electrode 230 are covered by the protective film 107.

Then, an anode material is laid on the entire surface including the first contact hole 1800a, and the anode 120 is left in a specific portion of the light-emitting area EA including the first contact hole 1800a through the first photoresist pattern 211 (101S) ). The anode 120 continues to remain on the outer coating 108 and inside the first contact hole 1800a.

Subsequently, the first photoresist pattern 211 is removed.

Next, as shown in FIG. 6C, after laying a bank material, the bank 150 is left, so that the bank 150 is located in a portion of the overcoat opening 108b (102S) in the non-light emitting region NEA. Here, a bank opening 150c is formed inside the outer coating opening 108b, and the diameter h2 of the bank opening 150c is smaller than the diameter h1 of the outer coating opening 108b. In this case, the bank 150 is shaped to surround the outer coating 108 on one side (e.g., the right side of the illustration) of the outer coating opening 108b.

Subsequently, as shown in FIG. 6D, the protective film 107 is removed by a second photoresist pattern 212 to expose the sheet electrode 230 and the auxiliary electrode 130. The second photoresist pattern 212 has a first photoresist pattern opening 212a and a second photoresist pattern opening 212b. The first photoresist pattern opening 212a exposes a portion of the upper surface of the sheet electrode 230, and the width of the exposed portion is smaller than the width of the sheet electrode 230 to be exposed. The second photoresist pattern opening 212b exposes the sidewall and a portion of the upper surface of the bank 150 that exposes the overcoat layer 108 and penetrates into the second photoresist pattern opening 212b to cover a portion of the auxiliary electrode 130. Here, the method of etching the protective film 107 by the second photoresist pattern 212 is to employ a isotropic wet etching which selectively etches only the protective film 107, so that such etching can be performed over a width which is larger than The spacing between the bank 150 and the second photoresist pattern 212 on the upper surface of the protective film 107 disposed above the auxiliary electrode 130, thereby defining the first opening 1800b (103S) in the insulating unit 1800. In this process, the etching target is the protective film 107, and the bank 150 is not affected by the etching process for the protective film 107. That is, the protective film 107 on the auxiliary electrode 130 is etched to form an opening whose diameter on the upper surface of the protective film 107 is substantially h1 as defined in Fig. 6B, and gradually decreases downward. The upper surface of the protective film 107 which has been etched has an opening of diameter h1, and the surface of the bank 150 is located in this opening. Further, the bank 150 can be vertically separated from the auxiliary electrode 130 by the space left after the protective film 107 is removed, and the bank 150 overlaps the auxiliary electrode 130 in a plan view.

Then, the second photoresist pattern 212 is removed.

Next, as shown in FIG. 6E, an organic light-emitting layer 121 (104S) is formed in the light-emitting area EA and the non-light-emitting area NEA. In this process, since the organic light-emitting material tends to be linearly deposited and the bank 150 protrudes from the insulating unit 1800 above the auxiliary electrode 130, the organic light-emitting material is not substantially deposited on the overlapping region where the bank 150 overlaps the auxiliary electrode 130. . Meanwhile, the organic light emitting layer 121 may be deposited on the upper surface of the portion of the auxiliary electrode 130 that is not overlapped with the bank 150.

Subsequently, a cathode 122 is formed to cover the organic light-emitting layer 122 (105S). In the light-emitting region EA, the cathode 122 is disposed on the organic light-emitting layer 121, and together with the organic light-emitting layer 121 and the anode 120 below it constitutes an organic light-emitting diode. Further, in the non-light-emitting region NEA, the cathode 122 is disposed on the organic light-emitting layer 121 in a region where the bank 150 and the auxiliary electrode 130 do not overlap. However, in the region where the bank 150 overlaps the auxiliary electrode 130, since the organic light-emitting layer 121 is not present therein, the cathode 122 can directly contact the auxiliary electrode 130.

In the above manufacturing method of the organic light-emitting display device of the present invention, since no partition wall is provided on the auxiliary electrode 130, it can be seen from FIG. 7 that only a small number of photomasks are required to form a light-emitting diode array, specifically Three masks are used to form the anode, the opening of the bank, and the sheet electrode, respectively.

(Second embodiment)

FIG. 8 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention.

Referring to FIG. 8, in the organic light emitting display device of the second embodiment of the present invention, a protruding pattern deep into the first opening 1800b above the auxiliary electrode 130 is formed by an overcoat layer 208. Moreover, in this embodiment, when the organic light-emitting layer 121 and the cathode 122 are to be formed, the cathode 122 is directly deposited on the auxiliary electrode 130 under the undercut structure due to the vertical deposition and the diffuse reflection deposition. This can reduce the resistance value of the cathode 122 of a large area.

Here, the protective film 107 is a non-organic insulating layer, and the overcoat layer 208 is an organic insulating layer.

Further, in the organic light-emitting display device according to the second embodiment of the present invention, the protective film 107 has a first opening 1800b, and the organic insulating layer 208 has a first sub-opening smaller than the first opening 1800b. Therefore, a convex pattern can be defined by deepening into the organic insulating layer 208 in the first opening 1800b. The shape of the opening formed in this process will be described in detail below with reference to Fig. 9C.

In this case, the insulating unit can be regarded as a non-organic insulating layer 107 which is formed into a single-layer structure having the first opening 1800b and the first contact hole 1800a therein; is located above the non-organic insulating layer 107 and serves as an organic insulating layer The outer coating 208 can be viewed as a raised pattern provided on the insulating unit.

9A to 9D are schematic cross-sectional views showing a process of the organic light emitting display device illustrated in Fig. 8.

Similarly, in the organic light-emitting display device of the second embodiment of the present invention, since the manufacturing method of the thin film transistor is known, the related description will not be repeated.

As shown in FIG. 9A, the substrate 100 is prepared. The substrate 100 includes a thin film transistor TFT, an auxiliary electrode 130, and a sheet electrode 230 as shown in FIG. 6A.

The auxiliary electrode 130, the sheet electrode 230, and the planarization portion of the source 106b and the drain 106a in the thin film transistor TFT are disposed in the same layer on the interlayer insulating layer 104.

Next, on the interlayer insulating layer including the thin film transistor TFT, the auxiliary electrode 130, and the sheet electrode 230, a protective film 107 made of a non-organic insulating material is provided.

Then, an overcoat layer 208 is formed on the protective film 107.

The overcoat layer 208 and the protective film 107 are defined by a photoresist pattern. The photoresist pattern is formed by laying a photoresist (not shown) on the photoresist pattern and then patterning the photoresist through an exposure and development process with a single mask. At this time, when the photoresist used is a positive photoresist, in the reticle used, a portion for leaving all of the overcoat layer 208 and the protective film 107 is defined as a shield for shifting only A portion of the exclusion coating 208 is defined as a half penetration, and a portion for removing all of the outer coating 208 and the protective film 107 is defined as a penetration. In addition, when the photoresist is a negative photoresist, the shield and the penetration are reversed.

Therefore, the photoresist pattern in the overcoat layer 208 can completely expose a portion of the upper surface of the source 106b, but remains slightly around the portion of the source 106b that is completely exposed and corresponds to the sheet electrode 230 and the auxiliary. On the area of the electrode 130.

With the photoresist pattern, the exposed portions of the overcoat layer 208 and the protective film 107 are removed first, as shown in Fig. 9A. Thereby, the first contact hole 1800a can be formed in a region completely exposed by the photoresist pattern.

Thereafter, some of the remaining photoresist pattern is removed, and the exposed portion of the overcoat layer 208 disposed over the auxiliary electrode 130 and the tab electrode 230 and around the first contact hole 1800a is removed. Here, an outer coating opening 208b can be defined by removing the outer coating 208 above the auxiliary electrode 130.

The protective film 107 covers the auxiliary electrode 130 and the sheet electrode 230.

Then, an anode material is deposited on the entire surface including the first contact hole 1800a, and is passed through a first photoresist pattern 261 to leave the anode 120 in a specific portion of the light-emitting region EA including the first contact hole 1800a. The anode 120 will remain inside the first contact hole 1800a and above the overcoat layer 208 and will be connected to the source 106b of the thin film transistor TFT.

Next, the first photoresist pattern 261 is removed.

Subsequently, after laying a bank material, as shown in Fig. 9B, a bank 250 is left in the non-light-emitting area NEA. During this process, the bank material in the upper portion of the auxiliary electrode 130 is removed by a bank opening 208c in the region where the overcoat opening 208b is located in the non-light emitting region NEA. In this case, a portion of the bank 250 will be located inside the outer coating opening 208b, as shown in Figure 9A, so the bank opening 208c will be smaller than the outer coating opening 208b. That is, one side of the outer coated aperture layer 208b may be covered by the bank 250, and the other side of the outer coated aperture layer 208b may not be covered by the bank 250. After that, as shown in FIG. 9C, the protective film 107 is removed to pass through the second photoresist pattern 262 to expose the sheet electrode 230 and the auxiliary electrode 130. The second photoresist pattern 262 is shaped to cover the bank 250 on the outer coating 208 and expose portions of the outer coating 208 where the bank 250 is not disposed. That is, a second photoresist pattern opening 262b defined by the second photoresist pattern 262 and the overcoat layer 208 above the auxiliary electrode 130 has a fifth diameter h5 which is smaller than that defined in FIG. 9B. The fourth diameter h4 of the bank opening 208c. Further, above the sheet electrode 230, a first photoresist pattern opening 262a is formed such that the exposure width of the sheet electrode 230 is smaller than the width of the sheet electrode 230 to be exposed.

At this time, since the method of etching the protective film 107 by the second photoresist pattern 262 is isotropic wet etching, the opening formed in the etching mode may be larger than the protective film 107 using the second photoresist pattern 262. Openings 262a and 262b formed by the upper surface. Therefore, the first opening 1800b of the protective film 107 etched on the auxiliary electrode 130 has a third diameter h3, and the third diameter h3 is larger than the second photoresist pattern opening 262b of the second photoresist pattern 262. The five diameters h5; and the outer coating 208 on the protective film 107 have an interface opening (first sub-opening) having a diameter smaller than the third diameter h3 of the first opening 1800b in the protective film 107. In this case, when viewed from the right side, after the protective film 107 is etched, the overcoat layer 208 protrudes inward from the protective film 107. Therefore, an undercut structure can be defined, and in this undercut structure, an upper pattern is projected out of the pattern.

Here, the first opening 1800b is defined in the protective film 107 fabricated in a single layer structure, and the undercut structure is defined according to the relationship between the overcoat layer 208 and the protective film 107, wherein the protective film 107 is etched away. To a greater extent than the outer coating 208 is etched away.

Next, the second photoresist pattern 262 is removed.

Then, as shown in FIG. 9D, the organic light-emitting layer 121 is formed in the light-emitting area EA and the non-light-emitting area NEA. Regarding the non-light-emitting region NEA, since the organic light-emitting layer tends to be linearly deposited, substantially no organic light-emitting layer 121 overlaps the auxiliary electrode 130 in the first opening 1800b deep in the upper opening 1800b above the auxiliary electrode 130. Formed within the area. The fully deposited organic light-emitting material 121 is disposed on the anode 120 in the light-emitting area EA and on the bank 250 in the non-light-emitting area NEA.

Subsequently, a cathode 122 is formed on the organic light-emitting layer 121 in the light-emitting area EA and the non-light-emitting area NEA. At this time, due to the diffuse reflection and the random surface deposition of the metal particles constituting the cathode 122, the cathode 122 can be deposited in the non-light-emitting region NEA, and the overcoat layer 208 and the auxiliary electrode 130 overlap each other and no organic light-emitting layer is disposed therein. Within the area of 121. Therefore, the auxiliary electrode 130 and the cathode 122 can be in direct contact.

In the second embodiment described above, since the sheet electrode 230 is exposed in the case where the bank 250 formed on the protective film 107 is covered by the second photoresist pattern 262, it is possible to prevent the heating process (for example, the bank 250) Curing) The intermediate coating 208 is reflowed. That is, since an undercut structure in the insulating unit 1800 is formed by forming the bank 250 in a thermal process, by patterning the non-organic protective film 107 under the overcoat layer 208, it is possible to prevent overcoating. The layer 208 collapses or prevents a portion of the bank 250 from remaining on the undercut region. In this case, the non-organic protective film 107 protects the sheet electrode 230 and the auxiliary electrode 130 during the step of fabricating the bank 250.

(Third embodiment)

FIG. 10 is a cross-sectional view of an organic light emitting display device according to a third embodiment of the present invention.

As shown in FIG. 10, in the organic light-emitting display device of the third embodiment, a embossed pattern which can penetrate into the first opening 1800b above the auxiliary electrode 130 is formed by using an anode ruthenium pattern 220. Even in this case, at the time of fabricating the organic light-emitting layer 121 and the cathode 122, the cathode 122 can be directly deposited in a region in which the auxiliary electrode 130 and the anode-turn pattern 220 overlap each other due to the vertical deposition and the diffuse reflection deposition. The auxiliary electrode 130 under the undercut structure is used to reduce the resistance value of the cathode 122 of a large area.

11A to 11D are schematic cross-sectional views showing a process of the organic light emitting display device illustrated in FIG. 10.

Similarly, in the organic light-emitting display device of the third embodiment of the present invention, since the fabrication method of the thin film transistor is known, the related description will not be repeated.

As shown in FIG. 11A, a substrate 100 as shown in FIG. 6A is prepared. The substrate 100 includes a thin film transistor TFT, an auxiliary electrode 130, and a sheet electrode 230.

In the same layer on the interlayer insulating layer 104, the auxiliary electrode 130, the tab electrode 230, and the source 106b of the thin film transistor TFT and the flattened portion of the drain 106a are provided.

Next, a protective film 107 made of a non-organic insulating material is provided on the interlayer insulating layer 104 including the thin film transistor TFT, the auxiliary electrode 130, and the sheet electrode 230.

Then, an overcoat layer 108 is formed on the protective film 107.

The overcoat layer 108 and the protective film 107 are defined by a photoresist pattern which is formed by laying a photoresist (not shown) on the photoresist pattern and then transmitting the exposure and development process. It is formed by patterning a photoresist with a single mask. At this time, when the photoresist is a positive photoresist, a portion of the photomask that is used to retain all of the overcoat layer 108 and the protective film 107 is defined as a shield portion, which will be used to remove only the portion of the overcoat layer 108. A portion that is a translucent portion and a portion to remove all of the overcoat layer 108 and the protective film 107 is defined as a penetrating portion. In addition, when the photoresist is a negative photoresist, the shield and the penetration are reversed.

Therefore, the photoresist pattern in the overcoat layer 108 can completely expose a portion of the upper surface of the source 106b, while remaining slightly around the partially exposed source 106b and corresponding to the tab electrode 230 and the auxiliary electrode 130. On the area. Through the photoresist pattern, as shown in FIG. 11A, the exposed portions of the overcoat layer 108 and the protective film 107 may be removed first, thereby forming the first contact hole 1800a in the region completely exposed by the photoresist pattern. .

Thereafter, some of the remaining photoresist pattern is removed, and the exposed partial overcoat layer 108 disposed over the auxiliary electrode 130 and the tab electrode 230 and around the first contact hole 1800a is removed.

At this time, the protective film 107 and the overcoat layer 108 constitute an insulating unit 1800. At this time, a portion of the overcoat layer 108 located above the auxiliary electrode 130 and wider than the auxiliary electrode 130 may be removed from the non-organic protective film 107.

The auxiliary electrode 130 and the sheet electrode 230 are covered with a protective film 107.

Subsequently, an anode material is deposited on the entire surface including the first contact hole 1800a, and through a first photoresist pattern 281 having a first photoresist pattern opening 281a, so that the anode 120 can remain in the light-emitting area EA. The region including the first contact hole 1800a and the portion overlapping the partial auxiliary electrode 130 in the non-light-emitting region NEA. Further, the anode meander pattern 220 may remain under the first photoresist pattern 281 formed in the non-light emitting region NEA. The anode ruthenium pattern 220 may remain on the upper surface of the protective film 107 above the auxiliary electrode 130 in the non-light-emitting region NEA and a portion of the upper surface and a portion of the sidewall of the overcoat layer 108. Additionally, the anode 120 can remain on top of the overcoat layer 108 and within the first contact hole 1800a.

Next, the first photoresist pattern 281 is removed.

Then, after laying a bank material, as shown in FIG. 11B, a bank 350 is covered to cover the exposed overcoat layer 108 in the non-light emitting region NEA, and the bank 350 is on the protective film 107 above the auxiliary electrode 130. There is an open area 350b. At this time, by removing the bank 350, a region of the anode ruthenium pattern 220 protruding from the overcoat layer 108 may be included in the opening region 350b. At this time, on the upper surface of the protective film 107 above the auxiliary electrode 130, the bank 350 and the anode crucible pattern 220 are separated by a sixth diameter h6.

Next, as shown in FIG. 11C, the protective film 107 is removed to pass through the second photoresist pattern 282 to expose the sheet electrode 230 and the auxiliary electrode 130. The second photoresist pattern 282 has a second photoresist pattern opening 282a corresponding to the chip electrode 230 and a third photoresist pattern opening 282b corresponding to the auxiliary electrode 130. When the protective film 107 is removed, the second photoresist pattern 282 covers the bank 350 that is still exposed by the auxiliary electrode 130, and the second photoresist pattern 282 exposes the anode erb pattern 220 on the auxiliary electrode 130. In addition, since the second photoresist pattern 282 covers one side of the bank 350, the interval between the anode 傀儡 pattern 220 and the second photoresist pattern 282 on the auxiliary electrode 130 is smaller than the sixth diameter defined in FIG. 11B. H6.

However, the non-organic protective film 107 on the auxiliary electrode 130 is subjected to isotropic etching to form a first opening 1800b having a seventh diameter h7. The seventh diameter h7 is larger than the interval between the second photoresist pattern 282 and the anode meander pattern 220.

That is, the anode crucible pattern 220 will penetrate into the first opening 1800b such that an undercut structure may be on one side of the first opening 1800b by the projection of the anode 傀儡 pattern 220 with respect to the auxiliary electrode 130. And a protective film 107 underneath it is formed. In addition, although the second photoresist pattern opening 282a having a width smaller than the width of the sheet electrode 230 to be exposed is formed on the sheet electrode 230, the second photoresist pattern is formed by isotropic etching the protective film 107. The opening 282a may be etched under a diameter which is larger than the diameter of the first opening 1800b at the upper surface of the protective film 107.

Next, the second photoresist pattern 282 is removed.

Subsequently, as shown in FIG. 11D, the organic light-emitting layer 121 is formed in the light-emitting area EA and the non-light-emitting area NEA. Regarding the non-light-emitting region NEA, since the organic light-emitting material tends to be deposited in a straight direction, substantially no organic light is formed in a region deep in the region where the anode-turn pattern 220 of the first opening 1800b overlaps the auxiliary electrode 130 on the auxiliary electrode 130. Layer 121. The fully deposited organic light-emitting layer 121 is disposed on the anode 120 in the light-emitting area EA and on the bank 350 in the non-light-emitting area NEA.

Then, a cathode 122 is formed on the organic light-emitting layer 121 in the light-emitting area EA and the non-light-emitting area NEA. At this time, since the metal particles constituting the cathode 122 are diffusely reflected and randomly surface-deposited, the cathode 122 may be deposited in the non-light-emitting region NEA where the anode 傀儡 pattern 220 overlaps the auxiliary electrode 130 and the organic light-emitting layer 121 is not disposed. Inside. Therefore, in the region of the first opening 1800b where the anode 傀儡 pattern 220 overlaps the auxiliary electrode 130, the auxiliary electrode 130 can be directly connected to the cathode 122.

The anode 120, the organic light-emitting layer 121, and the cathode 122 in the light-emitting region EA can function as an organic light-emitting diode.

In the third embodiment described above, the protective film 107 is wet-etched after the bank 350 is formed on the protective film 107 to expose the sheet electrode 230 and form the first opening 1800b having an undercut shape. The occurrence of reflow of the overcoat layer 108 during heating such as curing of the bank 350 or the like can be prevented. That is, after the bank 350 is formed in a thermal process, an undercut structure in the insulating unit 1800 including the overcoat layer 108 and the protective film 107 is formed under the overcoat layer 108, thereby preventing the overcoat layer 108 from being formed. collapse.

Fig. 12 is an SEM image showing the loss of the undercut structure of the joint between the auxiliary electrode and the cathode.

Figure 12 is an SEM image for explaining a method of forming a bank after the undercut structure is completely formed in the overcoat layer on the edge of the auxiliary electrode. As shown, the overcoat no longer has this undercut during the thermal process required to form the bank on the completed undercut structure. In other examples, when the general method described above is applied, in addition to the loss of the undercut structure, the bank made of organic material may remain on the undercut structure, or the outer coating may be reflowed. As a result, the undercut structure cannot be retained. This means that the cathode and the auxiliary electrode will not be properly connected.

The present invention can avoid this problem by changing the order of the processes. That is, after the bank is completely formed, the non-organic protective film can be etched to define an undercut structure and expose the sheet electrode. That is, the manufacturing method of the organic light emitting display device of the first embodiment and the second embodiment of the present invention can solve the problem of defining the undercut structure by wet etching the non-organic protective film after forming the bank in FIG. The problem caused.

In addition, in the above method for fabricating the organic light-emitting display device of the present invention, since it is not necessary to fabricate any spacer walls on the auxiliary electrode 130, the step of forming an array of light-emitting diodes requires only a small number of masks, specifically In other words, there are three masks for forming an anode, exposing a bank, and exposing a sheet electrode, respectively.

Figure 13 is an SEM image of the joint between the auxiliary electrode and the cathode of Figure 12 .

As shown in FIG. 13, when the convex anode pattern 220 is provided in the same manner as the third embodiment, the convex anode pattern 220 can be used to support the pattern above it, thereby preventing the patterns from hanging down, thereby preventing The case where the outer coating is reflowed.

(Fourth embodiment)

Figure 14 is a cross-sectional view showing an organic light emitting display device in accordance with a fourth embodiment of the present invention.

As shown in FIG. 14, in the organic light-emitting display device of the fourth embodiment of the present invention, a convex pattern is formed through the anode crucible pattern 220, and the convex pattern penetrates into the first opening 1800b above the auxiliary electrode 130. Even in this embodiment, when the organic light-emitting layer 121 and the cathode 122 are formed, the vertical deposition and the diffuse reflection deposition allow the cathode 122 to be directly deposited on the auxiliary electrode 130 under the undercut structure, thereby enabling a large area. The resistance value of the cathode 122 is lowered. Further, when the first contact hole 1800a for exposing the source 106b is formed, the overcoat layer 108 and the protective film 107 in the insulating unit 1800 may be removed to be spaced apart from the first contact hole 1800a and exposed The second contact hole 220c of the partial auxiliary electrode 130. Next, when the anode 120 and the anode ruthenium pattern 220 are formed, the anode ruthenium pattern 220 may be connected to the auxiliary electrode 130 through the second contact hole 220c, whereby electrical stability may be increased.

The related description of the same constituent elements in the above embodiments will not be described again.

Meanwhile, the undercut structure used in the above organic light-emitting display device can also be applied to other regions of the organic light-emitting display device.

15 is a schematic cross-sectional view of an organic light emitting display device according to a comparative example.

As shown in FIG. 15, in the organic light-emitting display device of the comparative example, the respective anodes 11 are located in respective sub-pixels on the substrate 1, and an organic light-emitting layer 13 and a cathode 14 are commonly used in a plurality of sub-pixels. Provided in.

Meanwhile, in the above-described embodiment and the comparative example, although the organic light-emitting layer 121 or 13 is exemplified as a single-layer structure, a hole introduction may be provided between the anode 120 or 11 and the organic light-emitting layer 121 or 13. A layer and a hole transport layer, and an electron transport layer and an electron introduction layer are provided between the organic light-emitting layer 121 or 13 and the cathode 122 or 14. Reference numeral 12, which is not illustrated in Fig. 15, is a bank. In some examples, when a series of organic light emitting diodes are provided between the anode and the cathode, a plurality of stacks can be provided, and a charge generating layer can be provided between the stacks.

In order to introduce a hole from the anode 11 into the organic light-emitting layer 13, the hole introduction layer may contain a dopant having a relatively high hole mobility. In addition, since a plurality of sub-pixels share a plurality of common layers in which the hole introduction layer is included, even when a signal is supplied to the respective anodes 11 to drive the specific sub-pixels, the hole introduction layer having a high hole mobility is provided. The dopant in the middle may cause side leakage current to occur. Further, in this tandem structure, the charge generating layer also has a highly conductive dopant, thus causing similar problems.

Since the hole introduction layer and the charge generation layer are provided together by all the sub-pixels and are not separated by the illuminating area and the non-light-emitting area, these highly conductive common layers are even when attempting to drive a plurality of specific sub-pixels. Will cause side leakage current to occur. Therefore, when attempting to drive a plurality of specific sub-pixels, adjacent sub-pixels are turned on, resulting in a decrease in color purity.

The problem of side leakage current occurring in the organic light-emitting display device of the comparative example can be solved by the undercut structure described above. The undercut structure can be defined by a first opening 1800b that can be coupled to the auxiliary electrode 130 described above and a second opening 1800c (shown in FIG. 16) within the insulating unit 1800. This will be explained in the following examples.

(Fifth Embodiment)

16 is a schematic plan view of an organic light emitting display device according to a fifth embodiment of the present invention, and FIGS. 17A to 17C are schematic cross-sectional views showing different embodiments of the organic light emitting display device of FIG. 16.

As shown in FIG. 16, an organic light-emitting display device according to a fifth embodiment of the present invention includes a second opening 1800c of an undercut structure in an insulating unit 1800 on a side where the auxiliary electrode is not provided with the non-light-emitting region NEA. In this case, the second opening 1800c of the fifth embodiment is elongated along one or more sides of the light emitting area EA and is longer than the length of the side of the light emitting area EA. In this configuration, the second opening 1800c imparts a common layer including an organic light-emitting layer electrically insulated between the plurality of sub-pixels in the horizontal direction of the light-emitting area EA. The second opening 1800c may include a convex pattern having a shape as shown in one side only, or may include a convex pattern on each side thereof. That is, a convex pattern may penetrate from at least one side of the second opening 1800c into the second opening 1800c.

The shape of the undercut structure can vary differently, as shown in Figures 17A-17C. These various embodiments have the common feature that the common layer comprising the organic light-emitting layer 121 is spaced apart on one or both surfaces of the second opening 1800c of the undercut structure such that at the anode 120 and the cathode 122 An organic layer including the organic light-emitting layer 121 between them forms an electrical insulator between the plurality of sub-pixels. Therefore, the side leakage current caused by the organic material can be avoided, and thus the selective driving of the sub-pixels can be realized, and the light of the colored light emitted by the sub-pixels can be prevented from being mixed.

The second opening 1800c of the undercut structure in the insulating unit 1800 will be specifically described below with reference to cross-sectional schematic views of different embodiments.

The second opening 1800c of the undercut structure can be formed together with the first opening 1800b through the same process step. For the process steps, please refer to the description of FIG. 5 to FIG. In addition, a convex pattern (for example, a bank, an organic insulating layer or an anode ruthenium pattern) in the first opening 1800b and a convex pattern in the second opening 1800c may be disposed on the same layer to reduce the process steps to least.

In the embodiment of FIG. 17A, the second opening 1800c does not overlap the first contact hole 1800a or the first opening 1800b in the non-light emitting region, and the second opening 1800c is separated from the insulating unit 1800 by more than the light emitting area EA. The distance of one side of it.

The insulating unit 1800 has a second opening 1800c for exposing a portion of the surface of the interlayer insulating layer 104. On the insulating unit 1800, there are provided banks 150, an organic light-emitting layer 121 and a cathode 122; wherein at least one surface of the bank 150 penetrates into the second opening 1800c to cover a portion of the second opening 1800c An interlayer insulating layer 104; the organic light-emitting layer 121 is disposed on the remaining portion of the interlayer insulating layer 104 in the second opening 1800c except for the portion covered by the bank 150; the cathode 122 covers the organic light-emitting layer 121 and is capable of interposing with the interlayer insulating layer The portion of 104 that is covered by the bank 150 is in contact.

Here, the organic light-emitting layer 121 may be separated from one or more sides of the second opening 1800c through the banks 150 in the non-light-emitting area NEA. If the organic light-emitting layer 121 in the second opening 1800c is separated from the four sides of the second opening 1800c, the organic light-emitting layer 121 can be isolated in the second opening 1800c. Since the organic light-emitting layer 121 is not formed under the partially protruded bank 150 in the second opening 1800c, when the organic light-emitting layer 121 is separated by one or more side surfaces of the second opening 1800c, organic The light-emitting layer 121 may be discontinuously formed between adjacent sub-pixels in order to break the sharing relationship between the plurality of sub-pixels and the organic light-emitting layer 121 or any common layer pushed up above or below it. This prevents side leakage current. Therefore, when the electrical signal is selectively supplied to the anode 120 of any sub-pixel, the corresponding sub-pixel can be independently controlled, thereby preventing the sub-pixel from being mis-conducted, thereby preventing the mixed light and having a solid color expression. .

In this structure, when a protruding pattern extending from the bank 150 into the second opening 1800c is provided on the interlayer insulating layer 104, since the organic light-emitting layer 121 which is deposited without exposing the mask tends to be deposited straight, The organic light-emitting layer 121 cannot pass through the area covered by the bank 150. Therefore, no organic material is provided in the region covered by the bank 150 on the second opening 1800c, and the organic light-emitting layer 121 is separated.

Meanwhile, an interlayer insulating layer 104 having an etching rate different from that of the non-organic protective film 107 may be formed under the second opening 1800c, and the interlayer insulating layer 104 is a non-organic insulating layer, and the non-organic protective film 107 is a lower layer forming the insulating unit 1800. An insulating layer. This is sufficient to distinguish the non-organic protective film 107 and the interlayer insulating layer 104 when the second opening 1800c is formed to achieve the purpose of etching the non-organic protective film 107 while also retaining the interlayer insulating layer 104.

In the organic light-emitting display device of the present invention, in addition to the above-described bank 150, a protrusion having an undercut structure may be formed over the interlayer insulating layer 104 by the overcoat layer 108 or 208 or by an anode material layer. Patterns, while other specific examples will be explained later.

In the embodiment of FIG. 17B, a raised pattern is formed by the overcoat layer 208, which protrudes from the insulating unit 1800 into the second opening 1800c. The outer coating 208 penetrates deeper into the second opening 1800c than the protective film 107. Since the organic light-emitting layer 121 is very easily deposited in a straight line, the organic light-emitting layer 121 does not necessarily accumulate under the convex overcoat layer 208. Also, in the vertical space between the convex overcoat layer 208 and the interlayer insulating layer 104 therebelow, the cathode 122 can be directly formed. Therefore, the organic light-emitting layer 121 can be made to insulate between a plurality of sub-pixels even in this embodiment. The protective film 10 herein has a first opening 1800b (as shown in FIG. 8) and a second opening 1800c (FIG. 17B). The outer coating 208 has a first sub-opening and a second sub-opening. The protective film 107 is made of a non-organic insulating material, and the outer coating 208 is made of an organic insulating layer. The first sub-opening and the second sub-opening are smaller than the first opening and the second opening, respectively. In this case, an undercut structure can be defined by the upper overcoat layer 208 and the underlying protective film 107. The isotropic etching of the protective film 107 at the interface is wider than the opening area of the overcoat layer 208.

In the embodiment of FIG. 17C, an anode pattern is formed over the insulating unit 1800 to form a raised pattern that can penetrate into the second opening 1800c. Even in this case, the protective film 107 under the anode meander pattern 220 has an undercut structure in the second opening 1800c in the insulating unit 1800. Therefore, the organic light-emitting layer 121 is not disposed on a portion of the interlayer insulating layer 104 that is vertically separated from the anode-turn pattern 220. Thereby, the discontinuous formation of the organic light-emitting layer 121 between the plurality of sub-pixels prevents side leakage current.

At the same time, based on each sub-pixel, the second opening for preventing side leakage current can be shaped into a shape sufficient to surround each of the light-emitting portions.

(Sixth embodiment)

FIG. 18 is a plan view of an organic light emitting display device according to a sixth embodiment of the present invention.

As shown in FIG. 18, the organic light-emitting display device of the sixth embodiment of the present invention may include, around each sub-pixel, a second opening 1800d surrounding the light-emitting area EA or surrounding the non-light-emitting area NEA around the light-emitting area EA. The second opening 1800d is as described in the fifth embodiment and other embodiments. At this time, the second opening 1800d may have a shape of a closed circuit or may be located at a position connectable with the first opening 1800b.

In this case, an organic light-emitting layer is divided by the second opening 1800d having a closed loop shape in each sub-pixel, whereby these sub-pixels can be independently driven.

In addition, the second opening in the insulating unit 1800 is caused by the vertical separation between the interlayer insulating layer 104 and the bank 150, the overcoat layer 208 or the anode ruthenium pattern 220 on the side of the second opening 1800d. An undercut structure is defined inside the hole 1800d. The convex pattern on the inner side of the second opening 1800d can realize division of the organic light-emitting layer between the plurality of sub-pixels.

Meanwhile, as described above, the organic light-emitting display device of the present invention comprises: a connection structure for connecting the cathode and the auxiliary electrode to reduce the resistance value of the cathode; and an undercut structure for separating the plurality of sub-pixels to avoid An organic light-emitting layer that leaks current. Since the interlayer insulating layer, a bank or an anode material provided in the display device forms an undercut structure without any partition wall, the number of the reticle can be reduced, and the use of the partition wall can be saved. The process steps or materials can improve the production yield and reliability of the organic light-emitting display device.

As apparent from the above description, the organic light-emitting display device of the present invention and the method of manufacturing the same have the following effects.

In an insulating unit comprising a protective film (non-organic insulating layer) and an insulating layer or a metal film disposed on the protective film but having a property different from that of the protective film, at least one of the surfaces of the insulating unit forms an undercut structure . Specifically, it is not necessary to provide any partition wall above the auxiliary electrode, and an area where the organic light emitting layer is not disposed may be defined on an auxiliary electrode, and the auxiliary electrode and the auxiliary electrode may be realized in the area where the organic light emitting layer is not disposed. A direct electrical connection between the cathodes. Therefore, the resistance value of the cathode in a single pattern formed on one panel can be reduced, thereby improving the brightness uniformity and electrical reliability of the entire panel.

Furthermore, an outer coating, a bank and/or an anode material may be disposed on the protective film, and at least one of the outer coating, the bank and the anode material may be formed in an opening above the auxiliary electrode. A protruding pattern. After forming these layers of material, the protective film under the raised pattern is removed to define an undercut structure. Therefore, residual particles in the undercut structure can be removed, and the embossed pattern can be prevented from being reflowed.

In addition, because the compartment wall is not required, the amount of light required can be reduced, which in turn reduces the time and cost required for the process.

Further, when the overcoat or anode material pattern on the protective film is located inside a contact hole above the auxiliary electrode, a partial region of the auxiliary electrode is covered by the undercut structure, whereby the cathode can be selectively deposited via this region.

In summary, by stabilizing the electrical connection between the auxiliary electrode and the cathode, the resistance value of the cathode of a large area can be reduced, and the brightness of the entire panel can be made uniform.

Further, when the underlying structure in the above-described insulating unit is used to isolate an organic light-emitting layer between the plurality of sub-pixels, side leakage current caused by the organic light-emitting layer or a common layer can be prevented.

The features, structures, utilities, and the like of the described embodiments are intended to be encompassed in at least one embodiment of the invention, and are not construed as being limited to only one embodiment. Furthermore, the features, structures, utilities, and the like of the described embodiments can be combined or adjusted in other embodiments by those skilled in the art. The contents of these combinations and adjustments should be understood as falling within the scope of the present invention.

1‧‧‧Substrate

10‧‧‧Organic light-emitting display device

11‧‧‧Anode

12‧‧‧Organic light-emitting layer

13‧‧‧ cathode

14‧‧‧ cathode

100‧‧‧Substrate

101‧‧‧buffer layer

102‧‧‧Active layer

103‧‧‧ gate

104‧‧‧Interlayer insulation

105‧‧‧gate insulation

106a‧‧‧Bungee

106b‧‧‧ source

107‧‧‧Protective film

108‧‧‧Overcoat

120‧‧‧Anode of organic light-emitting diode

121‧‧‧Organic light-emitting layer

122‧‧‧The cathode of the organic light-emitting diode

130‧‧‧Auxiliary electrode

131‧‧‧First metal wire

132‧‧‧second metal wire

150‧‧‧ estuary

150c‧‧‧divide opening

208‧‧‧Overcoat

208b‧‧‧Overcoat opening

208c‧‧‧divide opening

211‧‧‧First photoresist pattern

212‧‧‧second photoresist pattern

212a‧‧‧First photoresist pattern opening

212b‧‧‧Second photoresist pattern opening

220‧‧‧Anode 傀儡 pattern

220c‧‧‧second contact hole

230‧‧‧Sheet electrode

250‧‧‧Sediment

261‧‧‧First photoresist pattern

262‧‧‧second photoresist pattern

262a‧‧‧First photoresist pattern opening

262b‧‧‧Second photoresist pattern opening

281‧‧‧First photoresist pattern

281a‧‧‧First photoresist pattern opening

282‧‧‧second photoresist pattern

282a‧‧‧Second photoresist pattern opening

282b‧‧‧ Third photoresist pattern opening

350‧‧‧Sediment

350b‧‧‧opening area of the bank

1800‧‧‧Insulation unit

1800a‧‧‧first contact hole in the insulation unit

1800b‧‧‧first opening of the auxiliary electrode

1800c‧‧‧Second opening in the insulation unit

1800d‧‧‧second opening

A‧‧‧first node

AA‧‧‧ display area on the substrate

B‧‧‧second node

Cst‧‧‧ storage capacitor

DD‧‧‧Data Drive

DL, DL1~DLm‧‧‧ data line

D-Tr‧‧‧Drive Film Transistor

Illuminated area within the EA‧‧ sub-pixel

GL, GL ₁ ~ GL _n ‧‧ ‧ gate line

GD‧‧ ‧ gate driver

h ₁ ‧‧‧Drop diameter of the outer coating

h ₂ ‧‧‧diameter of the opening of the embankment

h ₃ ‧‧‧The third diameter of the first opening

h ₄ ‧‧‧fourth diameter of the dike opening

h ₅ ‧‧‧The fifth diameter of the second photoresist pattern opening

h ₆ ‧‧ ‧ the partition 350 is separated from the anode 傀儡 pattern 220 by a sixth diameter h6

h ₇ ‧‧‧ seventh diameter of the first opening

Non-lighting area in the NEA‧‧ subpixel

OLED‧‧ Organic Light Emitting Diode

PC‧‧‧ pixel circuit

TFT‧‧‧thin film transistor

VDD‧‧‧First Power Supply Unit

VDDL‧‧‧ drive voltage line

SP‧‧‧Subpixel

S-Tr‧‧‧ Switching Film Transistor

The accompanying drawings are included to provide a

1 is a schematic view for explaining changes in luminance obtained by measuring one side to the other opposite side of an organic light-emitting display device in the related art.

2 is a schematic view of an organic light emitting display device of the present invention.

3 is a circuit diagram of a sub-pixel in FIG. 2.

4 is a schematic plan view of a sub-pixel in FIG. 2.

FIG. 5 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

6A to 6E are schematic cross-sectional views showing a process of the organic light emitting display device of Fig. 5.

FIG. 7 is a flow chart showing the process of the organic light emitting display device according to the present invention.

FIG. 8 is a cross-sectional view of an organic light emitting display device according to a second embodiment of the present invention.

9A to 9D are schematic cross-sectional views showing a manufacturing process of the organic light emitting display device illustrated in Fig. 8.

FIG. 10 is a cross-sectional view showing an organic light emitting display device according to a third embodiment of the present invention.

11A to 11D are cross-sectional views showing a manufacturing process of the organic light emitting display device described in Fig. 10.

Figure 12 is a SEM diagram showing the loss of undercut structure in the junction between an auxiliary electrode and a cathode.

Figure 13 is a SEM schematic view of the joint between the auxiliary electrode and the cathode of Figure 12.

FIG. 14 is a cross-sectional view of an organic light emitting display device according to a fourth embodiment of the present invention.

15 is a schematic cross-sectional view of an organic light emitting display device according to a comparative example.

FIG. 16 is a schematic plan view of an organic light emitting display device according to a fifth embodiment of the present invention.

17A to 17C are schematic cross-sectional views showing different embodiments of the organic light emitting display device illustrated in Fig. 16.

FIG. 18 is a schematic plan view of an organic light emitting display device according to a sixth embodiment of the present invention.

Claims (15)

An organic light emitting display device comprising: a substrate comprising a display area and an edge area surrounding the display area, wherein in the display area, a plurality of sub-pixels are arranged in a matrix, and each of the sub-pixels comprises a a light emitting region and a non-light emitting region around the light emitting region; an auxiliary electrode located in the non-light emitting region; an insulating unit having a first opening, the first opening exposing the auxiliary electrode; and a first protruding a pattern on the insulating unit, wherein the first protruding pattern extends into the first opening and overlaps the exposed auxiliary electrode, the first protruding pattern and the auxiliary electrode have a vertical gap; A cathode directly contacts the auxiliary electrode exposed in the vertical gap and overlaps the first protruding pattern. The organic light-emitting display device of claim 1, further comprising: an organic light-emitting layer disposed on the auxiliary electrode that is exposed except for the exposed auxiliary electrode that is overlapped with the first convex pattern. The organic light-emitting display device of claim 2, wherein the cathode is disposed on the organic light-emitting layer and disposed on the exposed auxiliary electrode overlapping the first convex pattern. The organic light emitting display device of claim 1, further comprising: a second opening in the insulating unit in the non-light emitting region; and a second protruding pattern on the insulating unit, and the second A protruding pattern extends into the second opening to separate an organic light-emitting layer between the plurality of sub-pixels. The organic light-emitting display device of claim 4, wherein the first protruding pattern and the second protruding pattern are formed in the same layer, and/or are made of the same material. The organic light-emitting display device of claim 4, wherein the second opening in the non-light-emitting region extends along or around a side of the light-emitting region. The organic light-emitting display device of claim 1, wherein the first protruding pattern comprises a portion of a bank, the bank has a first sub-opening, the first sub-opening corresponding to the auxiliary electrode, And the first sub-opening is smaller than the first opening in the insulating unit. The organic light-emitting display device of claim 7, wherein the insulating unit comprises a non-organic insulating layer and an organic insulating layer, and the non-organic insulating layer is substantially stacked with the organic insulating layer. The organic light-emitting display device of claim 8, wherein the bank is disposed on a side surface of the insulating unit in the first opening. The organic light-emitting display device of claim 1, wherein the insulating unit comprises a non-organic insulating layer, the non-organic insulating layer comprises the first opening, and the first protruding pattern comprises an organic insulating layer, the organic insulating layer The layer has a first sub-opening, the first sub-opening being smaller than the first opening. The organic light-emitting display device of claim 1, further comprising: a light-emitting diode comprising the cathode and an anode, wherein the first protruding pattern is an anode-turn pattern in the same layer as the anode. The OLED display device of claim 11, wherein the anode 傀儡 pattern is electrically connected to the auxiliary electrode through a contact hole in the insulating unit. The organic light-emitting display device of claim 1, wherein the auxiliary electrode is in the same layer as a source or a drain of a thin film transistor of a sub-pixel. A manufacturing method of an organic light emitting display device, comprising: preparing a substrate, the substrate comprising a display area and an edge area surrounding the display area, wherein a plurality of sub pixels are arranged in a matrix and included in the display area a light emitting region and a non-light emitting region around the light emitting region; forming an auxiliary electrode in the non-light emitting region; forming an insulating unit on the auxiliary electrode; forming a first protruding pattern on the insulating unit; Forming a first opening in the insulating unit, the first opening exposing the auxiliary electrode, wherein the first protruding pattern extends into the first opening and overlaps the exposed auxiliary electrode; and forms a cathode, The cathode contacts the auxiliary electrode that is exposed and hangs over the first protruding pattern. The manufacturing method of claim 14, wherein the forming the first protruding pattern comprises forming a sub-opening in the first protruding pattern, wherein forming the first opening comprises selectively etching the insulating unit to The first opening is formed, and the diameter of the sub-opening is smaller than the diameter of the first opening.