TWI623927B - Display panel and method for driving pixel thereof - Google Patents
Display panel and method for driving pixel thereof Download PDFInfo
- Publication number
- TWI623927B TWI623927B TW106124262A TW106124262A TWI623927B TW I623927 B TWI623927 B TW I623927B TW 106124262 A TW106124262 A TW 106124262A TW 106124262 A TW106124262 A TW 106124262A TW I623927 B TWI623927 B TW I623927B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- transistor
- terminal
- control signal
- emitting diode
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
顯示面板及其畫素的驅動方法。顯示面板包括一畫素陣列,並且畫素陣列具有多個畫素。各畫素包括一發光二極體、一定電流源及一時間控制單元。發光二極體接收一第一系統電壓。定電流源提供一定電流。時間控制單元與發光二極體及定電流源串聯耦接,且具有一第一電容以儲存一參考電壓與一資料電壓的一電壓差。時間控制單元依據電壓差決定提供定電流至發光二極體的一提供時間。Display panel and driving method of pixels thereof. The display panel includes a pixel array, and the pixel array has a plurality of pixels. Each pixel includes a light emitting diode, a certain current source and a time control unit. The light emitting diode receives a first system voltage. A constant current source provides a certain current. The time control unit is coupled in series with the light emitting diode and the constant current source, and has a first capacitor to store a voltage difference between a reference voltage and a data voltage. The time control unit determines a supply time of providing a constant current to the light emitting diode according to the voltage difference.
Description
本發明是有關於一種驅動技術,且特別是有關於一種顯示面板及其畫素的驅動方法。The present invention relates to a driving technology, and in particular, to a display panel and a driving method of pixels thereof.
由於具有自發光性、廣視角、高對比、反應速度快等優點,發光二極體(light-emitting diode LED)已是目前大型顯示器的主要顯示技術之一。其中,若將發光二極體與主動矩陣驅動方式(Active-matrix driving)搭配將可應用於中小型顯示器產品,其驅動方式將透過驅動電流的強弱來控制發光二極體發光亮度,進而產生所需要的灰階。然而,隨著製程的發展,發光二極體逐漸微小化至微米等級成為微發光二極體(micro-LED),但是微小化的結果導致不僅微發光二極體的亮度會隨著驅動電流的強弱而變化,連帶其色相也會隨著驅動電流的強弱而變化,造成顯示器色偏問題。因此,需要一種新的畫素驅動技術來驅動微發光二極體。Due to the advantages of self-luminescence, wide viewing angle, high contrast, and fast response speed, light-emitting diode LEDs have become one of the main display technologies for large-scale displays. Among them, if a light-emitting diode is used in combination with an active-matrix driving method, it can be applied to small and medium-sized display products. The driving method will control the light-emitting diode's light-emitting brightness through the strength of the driving current, and thus produce the Required grayscale. However, with the development of the process, the light-emitting diode is gradually miniaturized to a micron level to become a micro-LED, but the result of the miniaturization not only causes the brightness of the micro-light-emitting diode to change with the driving current. The intensity changes, and its hue also changes with the intensity of the driving current, which causes the problem of color shift of the display. Therefore, a new pixel driving technology is needed to drive micro-light emitting diodes.
本發明提供一種顯示面板及其畫素的驅動方法,可避免顯示面板的畫素的色偏問題。The invention provides a display panel and a pixel driving method thereof, which can avoid the problem of color shift of the pixels of the display panel.
本發明的顯示面板,包括一畫素陣列,具有多個畫素。各畫素包括一發光二極體、一定電流源及一時間控制單元。發光二極體接收一第一系統電壓。定電流源提供一定電流。時間控制單元與發光二極體及定電流源串聯耦接,且具有一第一電容以儲存一參考電壓與一資料電壓的一電壓差。時間控制單元依據電壓差決定提供定電流至發光二極體的一提供時間。The display panel of the present invention includes a pixel array and has a plurality of pixels. Each pixel includes a light emitting diode, a certain current source and a time control unit. The light emitting diode receives a first system voltage. A constant current source provides a certain current. The time control unit is coupled in series with the light emitting diode and the constant current source, and has a first capacitor to store a voltage difference between a reference voltage and a data voltage. The time control unit determines a supply time of providing a constant current to the light emitting diode according to the voltage difference.
本發明的畫素的驅動方法,畫素具有一發光二極體,驅動方法包括下列步驟。在一資料寫入期間,判定一資料電壓與一參考電壓的一電壓差。以及,在一發光期間,依據電壓差決定提供一定電流至發光二極體的一提供時間。The pixel driving method of the present invention has a light emitting diode. The driving method includes the following steps. During a data writing period, a voltage difference between a data voltage and a reference voltage is determined. And, during a light emitting period, a providing time for providing a certain current to the light emitting diode is determined according to the voltage difference.
基於上述,本發明實施例的顯示面板及其畫素的驅動方法,由於發光二極體是透過定電流的提供時間來決定發光二極體的整體發光亮度,而定電流的提供時間是根據參考電壓與資料電壓之間的電壓差,因此可避免發光二極體微小化後電流變化所導致的色偏。Based on the foregoing, the display panel and the pixel driving method of the embodiment of the present invention, since the light-emitting diode determines the overall light-emitting brightness of the light-emitting diode through the supply time of the constant current, and the supply time of the constant current is based on the reference The voltage difference between the voltage and the data voltage can avoid the color shift caused by the current change after the light-emitting diode is miniaturized.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
在下述實施例中,為簡潔說明書的內容,相同或相似的元件或項目儘量以相同或相似的標號,但相同或相似的僅可視為類似的情況,而非用以表示完全相同,此要視實施例的內容所述,並且本發明實施例不以此為限。In the following embodiments, for the sake of concise description, the same or similar elements or items are labeled with the same or similar as much as possible, but the same or similar can only be regarded as similar situations, instead of being used to indicate the same. The content of the embodiments is described, and the embodiments of the present invention are not limited thereto.
圖1為依據本發明一實施例的顯示面板的系統示意圖。請參照圖1,在本實施例中,顯示面板100包括多條控制線110、多條資料線120及畫素陣列PXA。其中,畫素陣列PXA具有多個以陣列排列的畫素PX,控制線110用以耦接控制電路(例如閘極驅動器或類似的電路)以接收控制信號(例如閘極驅動信號),資料線120用以耦接電壓提供電路(例如源極驅動器、電源供應器或類似的電路)以接收畫素PX操作所需要的電壓(例如資料電壓VDATA、參考電壓VREF、系統電壓OVDD及OVSS)。FIG. 1 is a system schematic diagram of a display panel according to an embodiment of the present invention. Please refer to FIG. 1. In this embodiment, the display panel 100 includes a plurality of control lines 110, a plurality of data lines 120, and a pixel array PXA. The pixel array PXA has a plurality of pixels PX arranged in an array. The control line 110 is used to couple a control circuit (such as a gate driver or similar circuit) to receive a control signal (such as a gate driving signal). A data line 120 is coupled to a voltage supply circuit (such as a source driver, a power supply, or a similar circuit) to receive a voltage (such as a data voltage VDATA, a reference voltage VREF, a system voltage OVDD, and OVSS) required for the pixel PX operation.
各個畫素PX耦接對應的控制線110及對應的資料線120,以依據對應的控制信號而接收對應的電壓。各個畫素PX包括發光二極體OLD1、時間控制單元TCX及定電流源SRi。在本實施例中,發光二極體OLD1、時間控制單元TCX及定電流源SRi依序串聯耦接於系統電壓OVDD及系統電壓OVSS之間,亦即發光二極體OLD1的陽極接收系統電壓OVDD,而定電流源SRi接收系統電壓OVSS,但本發明實施例不以此為限,亦即發光二極體OLD1、時間控制單元TCX及定電流源Sri的配置位置可依據電路設計而定。其中,在驅動發光二極體OLD1的期間,系統電壓OVDD大於系統電壓OVSS,並且定電流源SRi提供定電流iFX。Each pixel PX is coupled to a corresponding control line 110 and a corresponding data line 120 to receive a corresponding voltage according to a corresponding control signal. Each pixel PX includes a light emitting diode OLD1, a time control unit TCX, and a constant current source SRI. In this embodiment, the light-emitting diode OLD1, the time control unit TCX, and the constant current source SRI are serially coupled in series between the system voltage OVDD and the system voltage OVSS, that is, the anode of the light-emitting diode OLD1 receives the system voltage OVDD. The constant current source SRI receives the system voltage OVSS, but the embodiment of the present invention is not limited thereto, that is, the positions of the light emitting diode OLD1, the time control unit TCX, and the constant current source Sri can be determined according to the circuit design. In the period during which the light emitting diode OLD1 is driven, the system voltage OVDD is greater than the system voltage OVSS, and the constant current source SRI provides a constant current iFX.
時間控制單元CTX具有電容C1(對應第一電容)以儲存參考電壓VREF與資料電壓VDATA之間的電壓差VDF,以依據電壓差VDF決定提供定電流iFX至發光二極體OLD1的時間,其中資料電壓VDATA對應畫素PX的亮度(亦即灰階值)。舉例來說,當資料電壓VDATA對應畫素PX的亮度越低時,透過電壓差VDF的改變,定電流iFX的提供時間會越短;當資料電壓VDATA對應畫素PX的亮度越高時,透過電壓差VDF的改變,定電流iFX的提供時間會越長。The time control unit CTX has a capacitor C1 (corresponding to the first capacitor) to store the voltage difference VDF between the reference voltage VREF and the data voltage VDATA, so as to determine the time for providing a constant current iFX to the light-emitting diode OLD1 according to the voltage difference VDF. The voltage VDATA corresponds to the brightness (that is, the grayscale value) of the pixel PX. For example, when the brightness of the data voltage VDATA corresponding to the pixel PX is lower, through the change of the voltage difference VDF, the provision time of the constant current iFX will be shorter; when the data voltage VDATA corresponds to the higher brightness of the pixel PX, the transmission The change of the voltage difference VDF, the longer the constant current iFX will be provided.
依據上述,由於發光二極體OLD1是透過定電流iFX的提供時間來決定發光二極體OLD1的整體發光亮度,而定電流iFX的提供時間是根據參考電壓VREF與資料電壓VDATA之間的電壓差VDF,因此可避免發光二極體OLD1微小化後電流變化所導致的色偏。According to the above, since the light emitting diode OLD1 determines the overall light emitting brightness of the light emitting diode OLD1 through the supply time of the constant current iFX, the supply time of the constant current iFX is based on the voltage difference between the reference voltage VREF and the data voltage VDATA VDF, thus avoiding the color shift caused by the current change after the light-emitting diode OLD1 is miniaturized.
圖2A為依據本發明第一實施例的圖1的顯示面板的畫素的電路示意圖。請參照圖1及圖2A,在本實施例中,畫素PXa包括電晶體T11(對應第一電晶體)、發光二極體OLD1、時間控制單元TCXa及定電流源SRia。時間控制單元TCXa包括電晶體T12(對應第二電晶體)及電容C1。定電流源SRia包括電晶體T13(對應第三電晶體)。其中,電晶體T11~T13是以n型電晶體為例。FIG. 2A is a schematic circuit diagram of pixels of the display panel of FIG. 1 according to the first embodiment of the present invention. Please refer to FIG. 1 and FIG. 2A. In this embodiment, the pixel PXa includes a transistor T11 (corresponding to the first transistor), a light emitting diode OLD1, a time control unit TCXa, and a constant current source SRia. The time control unit TCXa includes a transistor T12 (corresponding to a second transistor) and a capacitor C1. The constant current source SRia includes a transistor T13 (corresponding to a third transistor). Among them, the transistors T11 to T13 are examples of n-type transistors.
電晶體T11的汲極(對應第一端)接收資料電壓VDATA,電晶體T11的閘極(對應控制端)接收寫入控制信號SWTn,電晶體T11的源極(對應第二端)耦接電容C1的一端。電容C1的一端耦接電晶體T11的源極,並且電容C1的另一端接收斜坡信號Vran。電晶體T12的汲極(對應第一端)耦接發光二極體OLD1的陰極,電晶體T12的閘極(對應控制端)耦接電容C1的一端,電晶體T12的源極(對應第二端)耦接定電流源SRia。The drain (corresponding to the first terminal) of the transistor T11 receives the data voltage VDATA, the gate (corresponding to the control terminal) of the transistor T11 receives the write control signal SWTn, and the source (corresponding to the second terminal) of the transistor T11 is coupled to the capacitor One end of C1. One end of the capacitor C1 is coupled to the source of the transistor T11, and the other end of the capacitor C1 receives the ramp signal Vran. The drain (corresponding to the first terminal) of the transistor T12 is coupled to the cathode of the light emitting diode OLD1, the gate (corresponding to the control terminal) of the transistor T12 is coupled to one end of the capacitor C1, and the source of the transistor T12 (corresponding to the second Terminal) is coupled to a constant current source SRia.
發光二極體OLD1的陽極接收系統電壓OVDD(對應第一系統電壓)。電晶體T13的汲極(對應第一端)耦接電晶體T12的源極,電晶體T13的閘極(對應控制端)接收偏壓VBa,電晶體T13的源極(對應第二端)接收不同於系統電壓OVDD的系統電壓OVSS(對應第二系統電壓)。The anode of the light-emitting diode OLD1 receives a system voltage OVDD (corresponding to the first system voltage). The drain (corresponding to the first terminal) of the transistor T13 is coupled to the source of the transistor T12, the gate (corresponding to the control terminal) of the transistor T13 receives the bias voltage VBa, and the source (corresponding to the second terminal) of the transistor T13 receives A system voltage OVSS (corresponding to the second system voltage) different from the system voltage OVDD.
圖2B為依據本發明第一實施例的圖2A的畫素的驅動示意圖。請參照圖2A及圖2B,在資料寫入期間PDW,寫入控制信號SWTn形成正寫入脈波PWT1,以導通電晶體T11;偏壓VBa設定為禁能準位(例如系統電壓OVSS或接地電壓),以截止電晶體T13;並且,斜坡信號Vran設定為參考電壓VREF,而電容C1儲存電壓差VDF。此時,由於電晶體T13不導通,因此流經發光二極體OLD1的驅動電流ida為0。FIG. 2B is a driving schematic diagram of the pixel of FIG. 2A according to the first embodiment of the present invention. Please refer to FIG. 2A and FIG. 2B. During the data writing period PDW, the writing control signal SWTn forms a positive writing pulse PWT1 to turn on the crystal T11; the bias voltage VBa is set to a disabled level (such as system voltage OVSS or ground). Voltage) to cut off the transistor T13; and the ramp signal Vran is set to the reference voltage VREF, and the capacitor C1 stores the voltage difference VDF. At this time, since the transistor T13 is not turned on, the driving current ida flowing through the light-emitting diode OLD1 is 0.
在重置期間PRT,偏壓VBa及寫入控制信號SWTn設定為禁能準位,亦即電晶體T11及T13不導通;並且,斜坡信號Vran為位於參考電壓VREF與系統電壓OVSS之間的重置電壓VRTn,而電晶體T12的閘極電壓VGa為VRTn+VDF。During the reset period PRT, the bias voltage VBa and the write control signal SWTn are set to the disabled level, that is, the transistors T11 and T13 are not turned on; and the ramp signal Vran is a voltage between the reference voltage VREF and the system voltage OVSS. The voltage VRTn is set, and the gate voltage VGa of the transistor T12 is VRTn + VDF.
在發光期間PLT,偏壓VBa設定為偏壓準位,亦即大於電晶體T13的臨界電壓且位於飽合區的任意電壓;寫入控制信號SWTn設定為禁能準位,以截止電晶體T11;並且,斜坡信號Vran形成位於重置電壓VRTn與頂點電壓VTn之間的至少一鋸齒波(在此以1個為例),其中頂點電壓VTn位於參考電壓VREF與系統電壓OVDD之間,而閘極電壓VGa的最高點為VTn+VDF。During the light-emitting period PLT, the bias VBa is set to the bias level, that is, any voltage greater than the threshold voltage of the transistor T13 and located in the saturation region; the write control signal SWTn is set to the disabled level to cut off the transistor T11 ; And the ramp signal Vran forms at least one sawtooth wave between the reset voltage VRTn and the peak voltage VTn (here, one is taken as an example), wherein the peak voltage VTn is located between the reference voltage VREF and the system voltage OVDD, and the gate The highest point of the pole voltage VGa is VTn + VDF.
依據上述,斜坡信號Vran會透過電容C1而箝位,因此位移一個電壓差VDF。並且,當位移過的斜坡信號Vran的電壓準位小於電晶體T12的臨界電壓Vth1時,電晶體T12會不導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流ida為0;反之,當位移過的斜坡信號Vran的電壓準位大於等於電晶體T12的臨界電壓Vth1時,電晶體T12會導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流ida為定電流iFX。藉此,斜坡信號Vran的位移程度決定了定電流iFX的提供時間TPR。其中,偏壓VBa的偏壓準位決定了定電流iFX的大小。According to the above, the ramp signal Vran is clamped by the capacitor C1, so it is shifted by a voltage difference VDF. In addition, when the voltage level of the shifted ramp signal Vran is less than the threshold voltage Vth1 of the transistor T12, the transistor T12 will not conduct, so that the driving current ida flowing through the light emitting diode OLD1 during the PLT period is 0; Conversely, when the voltage level of the shifted ramp signal Vran is greater than or equal to the threshold voltage Vth1 of the transistor T12, the transistor T12 will be turned on, so that the driving current ida flowing through the light emitting diode OLD1 during the PLT period is a constant current. iFX. With this, the degree of displacement of the ramp signal Vran determines the supply time TPR of the constant current iFX. Among them, the bias level of the bias VBa determines the magnitude of the constant current iFX.
在本實施例中,當在發光期間PLT中位移過的斜坡信號Vran的電壓準位皆小於電晶體T12的臨界電壓Vth1時,亦即VTn+VDF小於臨界電壓Vth1,表示電晶體T12在整個發光期間PLT中不會導通,因此畫素PX的亮度(亦即灰階值)會為0。In this embodiment, when the voltage level of the ramp signal Vran shifted during the light-emitting period PLT is less than the threshold voltage Vth1 of the transistor T12, that is, VTn + VDF is less than the threshold voltage Vth1, it means that the transistor T12 emits light throughout The PLT will not be turned on during the period, so the brightness (that is, the grayscale value) of the pixel PX will be 0.
圖3A為依據本發明第二實施例的圖1的顯示面板的畫素的電路示意圖。請參照圖1及圖3A,在本實施例中,畫素PXb包括電晶體T21(對應第一電晶體)、發光二極體OLD1、時間控制單元TCXb及定電流源SRib。時間控制單元TCXb包括電晶體T22(對應第二電晶體)及電容C1。定電流源SRib包括電晶體T23(對應第三電晶體)。其中,電晶體T21~T23是以p型電晶體為例。3A is a schematic circuit diagram of a pixel of the display panel of FIG. 1 according to a second embodiment of the present invention. Please refer to FIG. 1 and FIG. 3A. In this embodiment, the pixel PXb includes a transistor T21 (corresponding to the first transistor), a light emitting diode OLD1, a time control unit TCXb, and a constant current source SRib. The time control unit TCXb includes a transistor T22 (corresponding to a second transistor) and a capacitor C1. The constant current source SRib includes a transistor T23 (corresponding to a third transistor). Among them, the transistors T21 to T23 are based on a p-type transistor as an example.
電晶體T21的源極(對應第一端)接收資料電壓VDATA,電晶體T21的閘極(對應控制端)接收寫入控制信號SWTp,電晶體T21的汲極(對應第二端)耦接電容C1的一端。電容C1的一端耦接電晶體T21的汲極,並且電容C1的另一端接收斜坡信號Vrap。電晶體T22的汲極(對應第一端)耦接發光二極體OLD1的陽極,電晶體T22的閘極(對應控制端)耦接電容C1的一端,電晶體T22的源極(對應第二端)耦接定電流源SRib。The source (corresponding to the first terminal) of the transistor T21 receives the data voltage VDATA, the gate (corresponding to the control terminal) of the transistor T21 receives the write control signal SWTp, and the drain (corresponding to the second terminal) of the transistor T21 is coupled to the capacitor One end of C1. One end of the capacitor C1 is coupled to the drain of the transistor T21, and the other end of the capacitor C1 receives a ramp signal Vrap. The drain (corresponding to the first terminal) of the transistor T22 is coupled to the anode of the light-emitting diode OLD1, the gate (corresponding to the control terminal) of the transistor T22 is coupled to one end of the capacitor C1, and the source of the transistor T22 (corresponding to the second Terminal) is coupled to a constant current source SRib.
發光二極體OLD1的陰極接收系統電壓OVSS(對應第一系統電壓)。電晶體T23的汲極(對應第一端)耦接電晶體T22的源極,電晶體T23的閘極(對應控制端)接收偏壓VBb,電晶體T23的源極(對應第二端)接收系統電壓OVDD(對應第二系統電壓)。The cathode of the light-emitting diode OLD1 receives a system voltage OVSS (corresponding to the first system voltage). The drain of transistor T23 (corresponding to the first terminal) is coupled to the source of transistor T22. The gate of transistor T23 (corresponding to the control terminal) receives the bias voltage VBb, and the source of transistor T23 (corresponding to the second terminal) receives System voltage OVDD (corresponding to the second system voltage).
圖3B為依據本發明第二實施例的圖3A的畫素的驅動示意圖。請參照圖3A及圖3B,在資料寫入期間PDW,寫入控制信號SWTp形成負寫入脈波PWT2,以導通電晶體T21;偏壓VBb設定為禁能準位(例如系統電壓OVDD或電源電壓),以截止電晶體T23;並且,斜坡信號Vrap設定為參考電壓VREF,而電容C1儲存電壓差VDF。此時,由於電晶體T23不導通,因此流經發光二極體OLD1的驅動電流idb為0。FIG. 3B is a driving schematic diagram of the pixel of FIG. 3A according to the second embodiment of the present invention. Please refer to FIG. 3A and FIG. 3B. During the data writing period PDW, the writing control signal SWTp forms a negative writing pulse PWT2 to turn on the crystal T21. The bias voltage VBb is set to a disabled level (such as the system voltage OVDD or the power supply). Voltage) to cut off the transistor T23; and the ramp signal Vrap is set to the reference voltage VREF, and the capacitor C1 stores the voltage difference VDF. At this time, since the transistor T23 is not turned on, the driving current idb flowing through the light-emitting diode OLD1 is 0.
在重置期間PRT,偏壓VBb及寫入控制信號SWTp設定為禁能準位,亦即電晶體T21及T23不導通;並且,斜坡信號Vrap設定為位於參考電壓VREF與系統電壓OVDD之間的重置電壓VRTp,而電晶體T22的閘極電壓VGb為VRTn+VDF。During the reset period PRT, the bias voltage VBb and the write control signal SWTp are set to the disabled level, that is, the transistors T21 and T23 are not turned on; and the ramp signal Vrap is set to be between the reference voltage VREF and the system voltage OVDD. The reset voltage VRTp, and the gate voltage VGb of the transistor T22 is VRTn + VDF.
在發光期間PLT,偏壓VBb設定為偏壓準位,亦即小於電晶體T23的臨界電壓且位於飽和區的任意電壓;寫入控制信號SWTp設定為禁能準位,以截止電晶體T21;並且,斜坡信號Vrap形成位於重置電壓VRTp與頂點電壓VTp之間的至少一鋸齒波(在此以1個為例),其中頂點電壓VTp位於參考電壓VREF與系統電壓OVSS之間,而閘極電壓VGb的最低點為VTp+VDF。During the light-emitting period PLT, the bias voltage VBb is set to the bias level, that is, any voltage lower than the threshold voltage of the transistor T23 and located in the saturation region; the write control signal SWTp is set to the disabled level to cut off the transistor T21; In addition, the ramp signal Vrap forms at least one sawtooth wave between the reset voltage VRTp and the peak voltage VTp (here, one is taken as an example), where the peak voltage VTp is between the reference voltage VREF and the system voltage OVSS, and the gate The lowest point of the voltage VGb is VTp + VDF.
依據上述,斜坡信號Vrap會透過電容C1而箝位,因此位移一個電壓差VDF。並且,當位移過的斜坡信號Vrap的電壓準位大於電晶體T22的臨界電壓Vth2時,電晶體T22會不導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流idb為0;反之,當位移過的斜坡信號Vrap的電壓準位小於等於電晶體T22的臨界電壓Vth2時,電晶體T22會導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流idB為定電流iFX。藉此,斜坡信號Vrap的位移程度同樣決定了定電流iFX的提供時間TPR。其中,偏壓VBb的偏壓準位決定了定電流iFX的大小。According to the above, the ramp signal Vrap is clamped by the capacitor C1, so it is shifted by a voltage difference VDF. In addition, when the voltage level of the displaced ramp signal Vrap is greater than the threshold voltage Vth2 of the transistor T22, the transistor T22 will not be turned on, so that the driving current idb of the PLT flowing through the light emitting diode OLD1 during the light emitting period is 0; Conversely, when the voltage level of the shifted ramp signal Vrap is less than or equal to the threshold voltage Vth2 of the transistor T22, the transistor T22 will be turned on, so that the driving current idB of the PLT flowing through the light emitting diode OLD1 during the light emission period is a constant current. iFX. With this, the degree of displacement of the ramp signal Vrap also determines the supply time TPR of the constant current iFX. Among them, the bias level of the bias VBb determines the magnitude of the constant current iFX.
在本實施例中,當在發光期間PLT中位移過的斜坡信號Vrap的電壓準位皆大於電晶體T22的臨界電壓Vth2時,亦即VTp+VDF大於臨界電壓Vth2,表示電晶體T22在發光期間PLT中不會導通,因此畫素PX的亮度(亦即灰階值)會為0。In this embodiment, when the voltage level of the ramp signal Vrap shifted during the light-emitting period PLT is greater than the threshold voltage Vth2 of the transistor T22, that is, VTp + VDF is greater than the threshold voltage Vth2, which indicates that the transistor T22 is in the light-emitting period. The PLT will not be turned on, so the brightness (that is, the grayscale value) of the pixel PX will be 0.
圖4A為依據本發明第三實施例的圖1的顯示面板的畫素的電路示意圖。請參照圖1及圖4A,在本實施例中,畫素PXc包括電晶體T31(對應第一電晶體)、電晶體T34(對應第四電晶體)、發光二極體OLD1、時間控制單元TCXc及定電流源SRic。時間控制單元TCXc包括電晶體T32(對應第二電晶體)及電容C1。定電流源SRic包括電晶體T33(對應第三電晶體)。其中,電晶體T31~T34是以n型電晶體為例。4A is a schematic circuit diagram of a pixel of the display panel of FIG. 1 according to a third embodiment of the present invention. Please refer to FIG. 1 and FIG. 4A. In this embodiment, the pixel PXc includes a transistor T31 (corresponding to a first transistor), a transistor T34 (corresponding to a fourth transistor), a light emitting diode OLD1, and a time control unit TCXc. And constant current source SRic. The time control unit TCXc includes a transistor T32 (corresponding to a second transistor) and a capacitor C1. The constant current source SRic includes a transistor T33 (corresponding to a third transistor). Among them, the transistors T31 to T34 are taken as examples of n-type transistors.
電晶體T31的汲極(對應第一端)接收資料電壓VDATA,電晶體T31的閘極(對應控制端)接收寫入控制信號SWTn,電晶體T31的源極(對應第二端)耦接電容C1的一端。電容C1的一端耦接電晶體T31的源極,並且電容C1的另一端接收斜坡信號Vran。電晶體T32的閘極(對應控制端)耦接電容C1的一端,電晶體T32的源極(對應第二端)耦接定電流源SRic。The drain (corresponding to the first terminal) of the transistor T31 receives the data voltage VDATA, the gate (corresponding to the control terminal) of the transistor T31 receives the write control signal SWTn, and the source (corresponding to the second terminal) of the transistor T31 is coupled to the capacitor One end of C1. One end of the capacitor C1 is coupled to the source of the transistor T31, and the other end of the capacitor C1 receives the ramp signal Vran. The gate (corresponding to the control terminal) of the transistor T32 is coupled to one end of the capacitor C1, and the source (corresponding to the second terminal) of the transistor T32 is coupled to a constant current source SRic.
電晶體T33的汲極(對應第一端)耦接電晶體T32的源極,電晶體T33的閘極(對應控制端)接收偏壓VBc,電晶體T33的源極(對應第二端)接收系統電壓OVSS(對應第二系統電壓)。其中,偏壓VBc是大於電晶體T33的臨界電壓且位於飽合區的任意電壓。The drain (corresponding to the first terminal) of the transistor T33 is coupled to the source of the transistor T32. The gate (corresponding to the control terminal) of the transistor T33 receives the bias voltage VBc, and the source (corresponding to the second terminal) of the transistor T33 receives System voltage OVSS (corresponding to the second system voltage). Among them, the bias voltage VBc is any voltage greater than the threshold voltage of the transistor T33 and located in the saturation region.
電晶體T34的汲極(對應第一端)耦接發光二極體OLD1的陰極,電晶體T34的閘極(對應控制端)接收發光控制信號SLTn,電晶體T34的源極(對應第二端)耦接電晶體T32的汲極(對應第一端),亦即透過時間控制單元TCXc的電晶體T32耦接至定電流源SRic。發光二極體OLD1的陽極接收系統電壓OVDD(對應第一系統電壓)。The drain (corresponding to the first terminal) of the transistor T34 is coupled to the cathode of the light emitting diode OLD1, the gate (corresponding to the control terminal) of the transistor T34 receives the light-emitting control signal SLTn, and the source (corresponding to the second terminal) of the transistor T34 ) Is coupled to the drain (corresponding to the first end) of the transistor T32, that is, the transistor T32 of the time control unit TCXc is coupled to the constant current source SRic. The anode of the light-emitting diode OLD1 receives a system voltage OVDD (corresponding to the first system voltage).
圖4B為依據本發明第三實施例的圖4A的畫素的驅動示意圖。請參照圖4A及圖4B,在資料寫入期間PDW,寫入控制信號SWTn形成正寫入脈波PWT1,以導通電晶體T31;發光控制信號SLTn設定為禁能準位,以截止電晶體T34;並且,斜坡信號Vran設定為參考電壓VREF,而電容C1儲存電壓差VDF。此時,由於電晶體T34不導通,因此流經發光二極體OLD1的驅動電流idc為0。FIG. 4B is a driving schematic diagram of the pixel of FIG. 4A according to the third embodiment of the present invention. Please refer to FIG. 4A and FIG. 4B. During the data writing period PDW, the writing control signal SWTn forms a positive writing pulse PWT1 to turn on the crystal T31. The light emission control signal SLTn is set to a disable level to turn off the transistor T34. ; And the ramp signal Vran is set to the reference voltage VREF, and the capacitor C1 stores a voltage difference VDF. At this time, since the transistor T34 is not conducting, the driving current idc flowing through the light-emitting diode OLD1 is 0.
在重置期間PRT,寫入控制信號SWTn及發光控制信號SLTn設定為禁能準位,亦即電晶體T31及T34不導通;並且,斜坡信號Vran為位於參考電壓VREF與系統電壓OVSS之間的重置電壓VRTn,而電晶體T32的閘極電壓VGc為VRTn+VDF。During the reset period PRT, the write control signal SWTn and the light emission control signal SLTn are set to the disabled level, that is, the transistors T31 and T34 are not turned on; and the ramp signal Vran is between the reference voltage VREF and the system voltage OVSS. The reset voltage VRTn, and the gate voltage VGc of the transistor T32 is VRTn + VDF.
在發光期間PLT,寫入控制信號SWTn設定為禁能準位,以截止電晶體T31;發光控制信號SLTn設定為致能準位,以導通電晶體T34;並且,斜坡信號Vran形成位於重置電壓VRTn與頂點電壓VTn之間的至少一鋸齒波(在此以1個為例),其中頂點電壓VTn位於參考電壓VREF與系統電壓OVDD之間,而閘極電壓VGc的最高點為VTn+VDF。During the light-emitting period PLT, the write control signal SWTn is set to the disable level to turn off the transistor T31; the light-emitting control signal SLTn is set to the enable level to turn on the transistor T34; and the ramp signal Vran is formed at the reset voltage At least one sawtooth wave between VRTn and the peak voltage VTn (here, one is taken as an example), wherein the peak voltage VTn is located between the reference voltage VREF and the system voltage OVDD, and the highest point of the gate voltage VGc is VTn + VDF.
依據上述,斜坡信號Vran會透過電容C1而箝位,因此位移一個電壓差VDF。並且,當位移過的斜坡信號Vran的電壓準位小於電晶體T32的臨界電壓Vth3時,電晶體T32不會導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流idc為0;反之,當位移過的斜坡信號Vran的電壓準位大於等於電晶體T32的臨界電壓Vth3時,電晶體T32會導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流idc為定電流iFX。藉此,斜坡信號Vran的位移程度決定了定電流iFX的提供時間TPR。其中,偏壓VBc決定了定電流iFX的大小。According to the above, the ramp signal Vran is clamped by the capacitor C1, so it is shifted by a voltage difference VDF. In addition, when the voltage level of the displaced ramp signal Vran is less than the threshold voltage Vth3 of the transistor T32, the transistor T32 will not be turned on, so that the driving current idc of the PLT flowing through the light emitting diode OLD1 during the light emitting period is 0; Conversely, when the voltage level of the shifted ramp signal Vran is greater than or equal to the threshold voltage Vth3 of the transistor T32, the transistor T32 is turned on, so that the driving current idc of the PLT flowing through the light emitting diode OLD1 during the light emission period is a constant current. iFX. With this, the degree of displacement of the ramp signal Vran determines the supply time TPR of the constant current iFX. Among them, the bias voltage VBc determines the magnitude of the constant current iFX.
在本實施例中,當在發光期間PLT中位移過的斜坡信號Vran的電壓準位皆小於電晶體T32的臨界電壓Vth3時,亦即VTn+VDF小於臨界電壓Vth3,表示電晶體T32在發光期間PLT中不會導通,因此畫素PX的亮度(亦即灰階值)會為0。In this embodiment, when the voltage level of the ramp signal Vran shifted during the light-emitting period PLT is less than the threshold voltage Vth3 of the transistor T32, that is, VTn + VDF is less than the threshold voltage Vth3, it means that the transistor T32 is in the light-emitting period. The PLT will not be turned on, so the brightness (that is, the grayscale value) of the pixel PX will be 0.
圖5A為依據本發明第四實施例的圖1的顯示面板的畫素的電路示意圖。請參照圖1及圖5A,在本實施例中,畫素PXd包括電晶體T41(對應第一電晶體)、電晶體T44(對應第四電晶體)、發光二極體OLD1、時間控制單元TCXd及定電流源SRid。時間控制單元TCXd包括電晶體T42(對應第二電晶體)及電容C1。定電流源SRid包括電晶體T43(對應第三電晶體)。其中,電晶體T41~T44是以p型電晶體為例。5A is a schematic circuit diagram of a pixel of the display panel of FIG. 1 according to a fourth embodiment of the present invention. Please refer to FIG. 1 and FIG. 5A. In this embodiment, the pixel PXd includes a transistor T41 (corresponding to a first transistor), a transistor T44 (corresponding to a fourth transistor), a light emitting diode OLD1, and a time control unit TCXd. And constant current source SRid. The time control unit TCXd includes a transistor T42 (corresponding to a second transistor) and a capacitor C1. The constant current source SRid includes a transistor T43 (corresponding to a third transistor). Among them, the transistors T41 to T44 use p-type transistors as an example.
電晶體T41的源極(對應第一端)接收資料電壓VDATA,電晶體T41的閘極(對應控制端)接收寫入控制信號SWTp,電晶體T41的汲極(對應第二端)耦接電容C1的一端。電容C1的一端耦接電晶體T41的汲極,並且電容C1的另一端接收斜坡信號Vrap。電晶體T42的閘極(對應控制端)耦接電容C1的一端,電晶體T42的汲極(對應第一端)耦接發光二極體OLD1的陽極。發光二極體OLD1的陰極接收系統電壓OVSS(對應第一系統電壓)。The source (corresponding to the first terminal) of the transistor T41 receives the data voltage VDATA, the gate (corresponding to the control terminal) of the transistor T41 receives the write control signal SWTp, and the drain (corresponding to the second terminal) of the transistor T41 is coupled to the capacitor One end of C1. One end of the capacitor C1 is coupled to the drain of the transistor T41, and the other end of the capacitor C1 receives a ramp signal Vrap. The gate (corresponding to the control end) of the transistor T42 is coupled to one end of the capacitor C1, and the drain (corresponding to the first end) of the transistor T42 is coupled to the anode of the light emitting diode OLD1. The cathode of the light-emitting diode OLD1 receives a system voltage OVSS (corresponding to the first system voltage).
電晶體T43的閘極(對應控制端)接收偏壓VBd,電晶體T43的源極(對應第二端)接收系統電壓OVDD(對應第二系統電壓)。其中,偏壓VBd是小於電晶體T43的臨界電壓且位於飽和區的任意電壓。The gate (corresponding to the control terminal) of the transistor T43 receives the bias voltage VBd, and the source (corresponding to the second terminal) of the transistor T43 receives the system voltage OVDD (corresponding to the second system voltage). Wherein, the bias voltage VBd is an arbitrary voltage which is smaller than the threshold voltage of the transistor T43 and is located in the saturation region.
電晶體T44的汲極(對應第一端)耦接電晶體T42的源極(對應第二端),亦即透過電晶體T42耦接發光二極體OLD1的陽極,電晶體T44的閘極(對應控制端)接收發光控制信號SLTp,電晶體T44的源極(對應第二端)耦接定電流源SRid的電晶體T43的汲極(對應第一端)。The drain (corresponding to the first terminal) of the transistor T44 is coupled to the source (corresponding to the second terminal) of the transistor T42, that is, the transistor T42 is coupled to the anode of the light-emitting diode OLD1, and the gate of the transistor T44 ( The corresponding control terminal) receives the light-emitting control signal SLTp, and the source (corresponding to the second terminal) of the transistor T44 is coupled to the drain (corresponding to the first terminal) of the transistor T43 of the constant current source SRid.
圖5B為依據本發明第四實施例的圖5A的畫素的驅動示意圖。請參照圖5A及圖5B,在資料寫入期間PDW,寫入控制信號SWTp形成負寫入脈波PWT2,以導通電晶體T41;發光控制信號SLTp設定為禁能準位,以截止電晶體T44;並且,斜坡信號Vrap設定為參考電壓VREF,而電容C1儲存電壓差VDF。此時,由於電晶體T44不導通,因此流經發光二極體OLD1的驅動電流idd為0。FIG. 5B is a driving schematic diagram of the pixel of FIG. 5A according to the fourth embodiment of the present invention. Please refer to FIG. 5A and FIG. 5B. During the data writing period PDW, the write control signal SWTp forms a negative write pulse PWT2 to turn on the crystal T41; the light emission control signal SLTp is set to the disable level to cut off the transistor T44. ; And the ramp signal Vrap is set to the reference voltage VREF, and the capacitor C1 stores a voltage difference VDF. At this time, since the transistor T44 is not turned on, the driving current idd flowing through the light-emitting diode OLD1 is 0.
在重置期間PRT,寫入控制信號SWTp及發光控制信號SLTp設定為禁能準位,亦即電晶體T41及T44不導通;並且,斜坡信號Vrap為位於參考電壓VREF與系統電壓OVDD之間的重置電壓VRTp,而電晶體T42的閘極電壓VGd為VRTp+VDF。During the PRT reset period, the write control signal SWTp and the light emission control signal SLTp are set to the disabled level, that is, the transistors T41 and T44 are not turned on; and the ramp signal Vrap is between the reference voltage VREF and the system voltage OVDD. The reset voltage VRTp, and the gate voltage VGd of the transistor T42 is VRTp + VDF.
在發光期間PLT,寫入控制信號SWTp設定為禁能準位,以截止電晶體T41;發光控制信號SLTp為致能準位,以導通電晶體T44;並且,斜坡信號Vrap形成位於重置電壓VRTp與頂點電壓VTp之間的至少一鋸齒波(在此以1個為例),其中頂點電壓VTp位於參考電壓VREF與系統電壓OVSS之間,而閘極電壓VGd的最低點為VTp+VDF。During the light-emitting period PLT, the write control signal SWTp is set to the disable level to cut off the transistor T41; the light-emitting control signal SLTp is set to the enable level to turn on the transistor T44; and the ramp signal Vrap is formed at the reset voltage VRTp At least one sawtooth wave between the peak voltage VTp (here, one is taken as an example), where the peak voltage VTp is between the reference voltage VREF and the system voltage OVSS, and the lowest point of the gate voltage VGd is VTp + VDF.
依據上述,斜坡信號Vrap會透過電容C1而箝位,因此位移一個電壓差VDF。並且,當位移過的斜坡信號Vrap的電壓準位大於電晶體T42的臨界電壓Vth4時,電晶體T42會不導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流idd為0;反之,當位移過的斜坡信號Vrap的電壓準位小於等於電晶體T42的臨界電壓Vth4時,電晶體T42會導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流idd為定電流iFX。藉此,斜坡信號Vrap的位移程度決定了定電流iFX的提供時間TPR。其中,偏壓VBd決定了定電流iFX的大小。According to the above, the ramp signal Vrap is clamped by the capacitor C1, so it is shifted by a voltage difference VDF. In addition, when the voltage level of the displaced ramp signal Vrap is greater than the threshold voltage Vth4 of the transistor T42, the transistor T42 will not be turned on, so that the driving current idd of the PLT flowing through the light emitting diode OLD1 during the light emitting period is 0; Conversely, when the voltage level of the displaced ramp signal Vrap is less than or equal to the threshold voltage Vth4 of the transistor T42, the transistor T42 will be turned on, so that the driving current idd flowing through the light-emitting diode OLD1 during the light-emitting period is a constant current. iFX. With this, the degree of displacement of the ramp signal Vrap determines the supply time TPR of the constant current iFX. Among them, the bias voltage VBd determines the magnitude of the constant current iFX.
在本實施例中,當在發光期間PLT中位移過的斜坡信號Vrap的電壓準位皆大於電晶體T42的臨界電壓Vth4時,亦即VTn+VDF大於臨界電壓Vth3,表示電晶體T42在發光期間PLT中不會導通,因此畫素PX的亮度(亦即灰階值)會為0。In this embodiment, when the voltage level of the ramp signal Vrap shifted during the light-emitting period PLT is greater than the threshold voltage Vth4 of the transistor T42, that is, VTn + VDF is greater than the threshold voltage Vth3, it means that the transistor T42 is in the light-emitting period. The PLT will not be turned on, so the brightness (that is, the grayscale value) of the pixel PX will be 0.
圖6A為依據本發明第五實施例的圖1的顯示面板的畫素的電路示意圖。請參照圖1及圖6A,在本實施例中,畫素PXe包括電晶體T51(對應第一電晶體)、發光二極體OLD1、時間控制單元TCXe及定電流源SRie。時間控制單元TCXe包括電晶體T52(對應第二電晶體)及電容C1。定電流源SRie包括電晶體T53~T55(對應第五電晶體至第七電晶體)及電容C2(對應第二電容)。其中,電晶體T51~T55是以n型電晶體為例。6A is a schematic circuit diagram of a pixel of the display panel of FIG. 1 according to a fifth embodiment of the present invention. Please refer to FIG. 1 and FIG. 6A. In this embodiment, the pixel PXe includes a transistor T51 (corresponding to the first transistor), a light emitting diode OLD1, a time control unit TCXe, and a constant current source Srie. The time control unit TCXe includes a transistor T52 (corresponding to a second transistor) and a capacitor C1. The constant current source SRie includes transistors T53 to T55 (corresponding to the fifth to seventh transistors) and a capacitor C2 (corresponding to the second capacitor). Among them, the transistors T51 to T55 are examples of n-type transistors.
電晶體T51的汲極(對應第一端)接收資料電壓VDATA,電晶體T51的閘極(對應控制端)接收寫入控制信號SWTn,電晶體T51的源極(對應第二端)耦接電容C1的一端。電容C1的一端耦接電晶體T51的源極,並且電容C1的另一端接收斜坡信號Vran。電晶體T52的汲極(對應第一端)耦接定電流源SRie,以透過定電流源SRie耦接發光二極體OLD1的陰極,電晶體T52的閘極(對應控制端)耦接電容C1的一端,電晶體T52的源極(對應第二端)接收系統電壓OVSS(對應第二系統電壓)。The drain (corresponding to the first terminal) of the transistor T51 receives the data voltage VDATA, the gate (corresponding to the control terminal) of the transistor T51 receives the write control signal SWTn, and the source (corresponding to the second terminal) of the transistor T51 is coupled to the capacitor. One end of C1. One end of the capacitor C1 is coupled to the source of the transistor T51, and the other end of the capacitor C1 receives the ramp signal Vran. The drain (corresponding to the first terminal) of the transistor T52 is coupled to the constant current source SRie to couple the cathode of the light emitting diode OLD1 through the constant current source SRie, and the gate (corresponding to the control terminal) of the transistor T52 is coupled to the capacitor C1 At one end, the source (corresponding to the second end) of the transistor T52 receives the system voltage OVSS (corresponding to the second system voltage).
發光二極體OLD1的陽極接收系統電壓OVDDx(對應第一系統電壓)。電晶體T53的汲極(對應第一端)耦接發光二極體OLD1的陰極,電晶體T53的源極(對應第二端)耦接電晶體T52的汲極。電容C2耦接於電晶體T53的閘極(對應控制端)與源極之間。電晶體T54的汲極(對應第一端)接收高電壓VDDH,電晶體T54的閘極(對應控制端)接收開關控制信號SSCn,電晶體T54的源極(對應第二端)耦接電容C2的一端。電晶體T55的汲極(對應第一端)接收低電壓VDDL,電晶體T55的閘極(對應控制端)接收開關控制信號SSCn,電晶體T55的源極(對應第二端)耦接電晶體T53的汲極。The anode of the light-emitting diode OLD1 receives a system voltage OVDDx (corresponding to the first system voltage). The drain (corresponding to the first end) of the transistor T53 is coupled to the cathode of the light emitting diode OLD1, and the source (corresponding to the second end) of the transistor T53 is coupled to the drain of the transistor T52. The capacitor C2 is coupled between the gate (corresponding to the control terminal) and the source of the transistor T53. The drain (corresponding to the first terminal) of the transistor T54 receives the high voltage VDDH, the gate (corresponding to the control terminal) of the transistor T54 receives the switching control signal SSCn, and the source (corresponding to the second terminal) of the transistor T54 is coupled to the capacitor C2 The end. The drain (corresponding to the first terminal) of the transistor T55 receives the low voltage VDDL, the gate (corresponding to the control terminal) of the transistor T55 receives the switching control signal SSCn, and the source (corresponding to the second terminal) of the transistor T55 is coupled to the transistor The drain of T53.
圖6B為依據本發明第五實施例的圖6A的畫素的驅動示意圖。請參照圖6A及圖6B,在資料寫入期間PDW,寫入控制信號SWTn形成正寫入脈波PWT1,以導通電晶體T51;開關控制信號SSCn設定為致能準位,以導通電晶體T54及T55;系統電壓OVDDx設定為低電壓VDDL,並且斜坡信號Vran設定為參考電壓VREF,而電容C1儲存電壓差VDF。FIG. 6B is a driving schematic diagram of the pixel of FIG. 6A according to a fifth embodiment of the present invention. 6A and 6B, during the data writing period PDW, the writing control signal SWTn forms a positive writing pulse PWT1 to turn on the crystal T51; the switch control signal SSCn is set to the enable level to turn on the crystal T54 And T55; the system voltage OVDDx is set to a low voltage VDDL, the ramp signal Vran is set to a reference voltage VREF, and the capacitor C1 stores a voltage difference VDF.
此時,由於發光二極體OLD1兩端電壓為相同電壓準位,因此流經發光二極體OLD1的驅動電流ide為0。並且,電晶體T55的源極透過的導通的電晶體T53耦接至電容C2的另一端,以使電容C2儲存高電壓VDDH與低電壓VDDL之間的電壓差。At this time, since the voltage across the light emitting diode OLD1 is at the same voltage level, the driving current ide flowing through the light emitting diode OLD1 is 0. In addition, the turned-on transistor T53 transmitted through the source of the transistor T55 is coupled to the other end of the capacitor C2, so that the capacitor C2 stores a voltage difference between the high voltage VDDH and the low voltage VDDL.
在重置期間PRT,寫入控制信號SWTn設定為禁能準位,以截止電晶體T51;開關控制信號SSCn設定為致能準位,系統電壓OVDDx設定為高電壓VDDH,並且斜坡信號Vran為位於參考電壓VREF與系統電壓OVSS之間的重置電壓VRTn,而電晶體T52的閘極電壓VGe為VRTn+VDF。During the PRT reset, the write control signal SWTn is set to the disabled level to cut off the transistor T51; the switch control signal SSCn is set to the enabled level, the system voltage OVDDx is set to the high voltage VDDH, and the ramp signal Vran is located at The reset voltage VRTn between the reference voltage VREF and the system voltage OVSS, and the gate voltage VGe of the transistor T52 is VRTn + VDF.
在發光期間PLT,系統電壓OVDDx設定為高電壓VDDH;寫入控制信號SWTn及開關控制信號SSCn設定為禁能準位,以截止電晶體T51、T54及T55;並且,斜坡信號Vran形成位於重置電壓VRTn與頂點電壓VTn之間的至少一鋸齒波(在此以1個為例),其中頂點電壓VTn位於參考電壓VREF與系統電壓OVDD之間,而閘極電壓VGe的最高點為VTn+VDF。During the light-emitting period PLT, the system voltage OVDDx is set to a high voltage VDDH; the write control signal SWTn and the switch control signal SSCn are set to disable levels to cut off the transistors T51, T54, and T55; and the ramp signal Vran is formed at reset At least one sawtooth wave between the voltage VRTn and the peak voltage VTn (here, one is taken as an example), where the peak voltage VTn is between the reference voltage VREF and the system voltage OVDD, and the highest point of the gate voltage VGe is VTn + VDF .
依據上述,斜坡信號Vran會透過電容C1而箝位,因此位移一個電壓差VDF。並且,當位移過的斜坡信號Vran的電壓準位小於電晶體T52的臨界電壓Vth5時,電晶體T52不會導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流ide為0;反之,當位移過的斜坡信號Vran的電壓準位大於等於電晶體T52的臨界電壓Vth5時,電晶體T52會導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流ide為定電流iFX。藉此,斜坡信號Vran的位移程度決定了定電流iFX的提供時間TPR。其中,高電壓VDDH與低電壓VDDL之間的電壓差決定了定電流iFX的大小。According to the above, the ramp signal Vran is clamped by the capacitor C1, so it is shifted by a voltage difference VDF. In addition, when the voltage level of the shifted ramp signal Vran is less than the threshold voltage Vth5 of the transistor T52, the transistor T52 will not be turned on, so that the driving current ide flowing through the light emitting diode OLD1 during the PLT period is 0; Conversely, when the voltage level of the shifted ramp signal Vran is greater than or equal to the threshold voltage Vth5 of the transistor T52, the transistor T52 will be turned on, so that the driving current ide flowing through the light emitting diode OLD1 during the PLT period is a constant current. iFX. With this, the degree of displacement of the ramp signal Vran determines the supply time TPR of the constant current iFX. Among them, the voltage difference between the high voltage VDDH and the low voltage VDDL determines the magnitude of the constant current iFX.
在本實施例中,當在發光期間PLT中位移過的斜坡信號Vran的電壓準位皆小於電晶體T52的臨界電壓Vth5時,亦即VTn+VDF小於臨界電壓Vth5,表示電晶體T52在發光期間PLT中不會導通,因此畫素PX的亮度(亦即灰階值)會為0。In this embodiment, when the voltage level of the ramp signal Vran shifted in the light-emitting period PLT is less than the threshold voltage Vth5 of the transistor T52, that is, VTn + VDF is less than the threshold voltage Vth5, it means that the transistor T52 is in the light-emitting period. The PLT will not be turned on, so the brightness (that is, the grayscale value) of the pixel PX will be 0.
圖7A為依據本發明第六實施例的圖1的顯示面板的畫素的電路示意圖。請參照圖1及圖7A,在本實施例中,畫素PXf包括電晶體T61(對應第一電晶體)、發光二極體OLD1、時間控制單元TCXf及定電流源SRif。時間控制單元TCXf包括電晶體T62(對應第二電晶體)及電容C1。定電流源SRif包括電晶體T63~T65(對應第五電晶體至第七電晶體)及電容C3(對應第二電容)。其中,電晶體T61~T65是以p型電晶體為例。FIG. 7A is a schematic circuit diagram of pixels of the display panel of FIG. 1 according to a sixth embodiment of the present invention. Please refer to FIG. 1 and FIG. 7A. In this embodiment, the pixel PXf includes a transistor T61 (corresponding to the first transistor), a light emitting diode OLD1, a time control unit TCXf, and a constant current source SRif. The time control unit TCXf includes a transistor T62 (corresponding to a second transistor) and a capacitor C1. The constant current source SRif includes transistors T63 to T65 (corresponding to the fifth to seventh transistors) and a capacitor C3 (corresponding to the second capacitor). Among them, the transistors T61 to T65 are p-type transistors as an example.
電晶體T61的源極(對應第一端)接收資料電壓VDATA,電晶體T61的閘極(對應控制端)接收寫入控制信號SWTp,電晶體T61的汲極(對應第二端)耦接電容C1的一端。電容C1的另一端接收斜坡信號Vrap。電晶體T62的汲極(對應第一端)耦接定電流源SRif,以透過定電流源SRif耦接發光二極體OLD1的陽極,電晶體T62的閘極(對應控制端)耦接電容C1的一端,電晶體T62的源極(對應第二端)接收系統電壓OVDDx(對應第二系統電壓)。The source (corresponding to the first terminal) of the transistor T61 receives the data voltage VDATA, the gate (corresponding to the control terminal) of the transistor T61 receives the write control signal SWTp, and the drain (corresponding to the second terminal) of the transistor T61 is coupled to the capacitor One end of C1. The other end of the capacitor C1 receives the ramp signal Vrap. The drain (corresponding to the first terminal) of the transistor T62 is coupled to the constant current source SRif to couple the anode of the light-emitting diode OLD1 through the constant current source SRif. The gate (corresponding to the control terminal) of the transistor T62 is coupled to the capacitor C1 At one end, the source (corresponding to the second end) of the transistor T62 receives the system voltage OVDDx (corresponding to the second system voltage).
發光二極體OLD1的陰極接收系統電壓OVSS(對應第一系統電壓)。電晶體T63的汲極(對應第一端)耦接發光二極體OLD1的陽極,電晶體T63的源極(對應第二端)耦接電晶體T62的汲極。電容C3耦接於電晶體T63的閘極(對應控制端)與源極之間。電晶體T64的汲極(對應第一端)接收低電壓VDDL,電晶體T64的閘極(對應控制端)接收開關控制信號SSCp,電晶體T64的源極(對應第二端)耦接電容C3的一端。電晶體T65的汲極(對應第一端)接收高電壓VDDH,電晶體T65的閘極(對應控制端)接收開關控制信號SSCp,電晶體T65的源極(對應第二端)耦接電容C3的另一端。The cathode of the light-emitting diode OLD1 receives a system voltage OVSS (corresponding to the first system voltage). The drain (corresponding to the first terminal) of the transistor T63 is coupled to the anode of the light emitting diode OLD1, and the source (corresponding to the second terminal) of the transistor T63 is coupled to the drain of the transistor T62. The capacitor C3 is coupled between the gate (corresponding to the control terminal) and the source of the transistor T63. The drain (corresponding to the first terminal) of the transistor T64 receives the low voltage VDDL, the gate (corresponding to the control terminal) of the transistor T64 receives the switching control signal SSCp, and the source (corresponding to the second terminal) of the transistor T64 is coupled to the capacitor C3 The end. The drain (corresponding to the first terminal) of the transistor T65 receives the high voltage VDDH, the gate (corresponding to the control terminal) of the transistor T65 receives the switching control signal SSCp, and the source (corresponding to the second terminal) of the transistor T65 is coupled to the capacitor C3 The other end.
圖7B為依據本發明第六實施例的圖2A的畫素的驅動示意圖。請參照圖7A及圖7B,在資料寫入期間PDW,寫入控制信號SWTp形成負寫入脈波PWT2,以導通電晶體T61;開關控制信號SSCp設定為致能準位,以導通電晶體T64及T65;系統電壓OVDDx設定為低電壓VDDL,並且斜坡信號Vrap設定為參考電壓VREF,而電容C1儲存電壓差VDF。FIG. 7B is a driving schematic diagram of the pixel of FIG. 2A according to a sixth embodiment of the present invention. Please refer to FIG. 7A and FIG. 7B. During the data writing period PDW, the write control signal SWTp forms a negative write pulse PWT2 to turn on the crystal T61. The switch control signal SSCp is set to the enable level to turn on the crystal T64. And T65; the system voltage OVDDx is set to a low voltage VDDL, the ramp signal Vrap is set to a reference voltage VREF, and the capacitor C1 stores a voltage difference VDF.
此時,由於系統電壓OVDDx為低電壓VDDL,因此流經發光二極體OLD1的驅動電流idf為0。並且,電容C3儲存高電壓VDDH與低電壓VDDL之間的電壓差。At this time, since the system voltage OVDDx is a low voltage VDDL, the driving current idf flowing through the light-emitting diode OLD1 is 0. Also, the capacitor C3 stores a voltage difference between the high voltage VDDH and the low voltage VDDL.
在重置期間PRT,寫入控制信號SWTp設定為禁能準位,以截止電晶體T61;開關控制信號SSCp設定為致能準位,系統電壓OVDDx設定為低電壓VDDL,並且斜坡信號Vrap為位於參考電壓VREF與系統電壓OVSS之間的重置電壓VRTp,而電晶體T62的閘極電壓VGf為VRTp+VDF。During the PRT reset, the write control signal SWTp is set to the disable level to cut off the transistor T61; the switch control signal SSCp is set to the enable level, the system voltage OVDDx is set to the low voltage VDDL, and the ramp signal Vrap is located at The reset voltage VRTp between the reference voltage VREF and the system voltage OVSS, and the gate voltage VGf of the transistor T62 is VRTp + VDF.
在發光期間PLT,系統電壓OVDDx為高電壓VDDH;寫入控制信號SWTp及開關控制信號SSCp為禁能準位,以截止電晶體T61、T64及T65;並且斜坡信號Vrap形成位於重置電壓VRTp與頂點電壓VTp之間的至少一鋸齒波(在此以1個為例),其中頂點電壓VTp位於參考電壓VREF與系統電壓OVSS之間,而閘極電壓VGf的最低點為VTp+VDF。During the light-emitting period PLT, the system voltage OVDDx is a high voltage VDDH; the write control signal SWTp and the switch control signal SSCp are disabled levels to cut off the transistors T61, T64, and T65; and the ramp signal Vrap is formed between the reset voltage VRTp and At least one sawtooth wave between the peak voltages VTp (here, one is taken as an example), where the peak voltage VTp is between the reference voltage VREF and the system voltage OVSS, and the lowest point of the gate voltage VGf is VTp + VDF.
依據上述,斜坡信號Vrap會透過電容C1而箝位,因此位移一個電壓差VDF。並且,當位移過的斜坡信號Vrap的電壓準位大於電晶體T62的臨界電壓Vth6時,電晶體T62不會導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流idf為0;反之,當位移過的斜坡信號Vrap的電壓準位小於等於電晶體T62的臨界電壓Vth6時,電晶體T62會導通,以至於在發光期間PLT流經發光二極體OLD1的驅動電流idf為定電流iFX。藉此,斜坡信號Vrap的位移程度決定了定電流iFX的提供時間TPR。其中,高電壓VDDH與低電壓VDDL之間的電壓差決定了定電流iFX的大小。According to the above, the ramp signal Vrap is clamped by the capacitor C1, so it is shifted by a voltage difference VDF. In addition, when the voltage level of the displaced ramp signal Vrap is greater than the threshold voltage Vth6 of the transistor T62, the transistor T62 will not be turned on, so that the driving current idf of the PLT flowing through the light emitting diode OLD1 during the light emitting period is 0; Conversely, when the voltage level of the displaced ramp signal Vrap is less than or equal to the threshold voltage Vth6 of the transistor T62, the transistor T62 will be turned on, so that the driving current idf of the PLT flowing through the light-emitting diode OLD1 during the light-emitting period is a constant current. iFX. With this, the degree of displacement of the ramp signal Vrap determines the supply time TPR of the constant current iFX. Among them, the voltage difference between the high voltage VDDH and the low voltage VDDL determines the magnitude of the constant current iFX.
在本實施例中,當在發光期間PLT中位移過的斜坡信號Vrap的電壓準位皆大於電晶體T62的臨界電壓Vth6時,亦即VTn+VDF大於臨界電壓Vth6,表示電晶體T62在發光期間PLT中不會導通,因此畫素PX的亮度(亦即灰階值)會為0。In this embodiment, when the voltage level of the ramp signal Vrap shifted during the light-emitting period PLT is greater than the threshold voltage Vth6 of the transistor T62, that is, VTn + VDF is greater than the threshold voltage Vth6, it indicates that the transistor T62 is in the light-emitting period. The PLT will not be turned on, so the brightness (that is, the grayscale value) of the pixel PX will be 0.
請再參照圖1、圖2A、圖2B、圖3A、圖3B、圖4A、圖4B、圖5A、圖5B、圖6A、圖6B、圖7A及圖7B。在本發明的一實施例中,所有的畫素(如PX、PXa~PXf)在資料寫入期間PDW中皆會接收對應的資料電壓VDATA,並且在發光期間PLT中會接收同一斜坡信號(如Vran、Vrap)。藉此,可簡化顯示面板(如100)的畫素的驅動方式,並且可避免循序點亮所造成的畫面殘影。Please refer to FIGS. 1, 2A, 2B, 3A, 3B, 4A, 4B, 5A, 5B, 6A, 6B, 7A, and 7B. In an embodiment of the invention, all pixels (such as PX, PXa ~ PXf) will receive the corresponding data voltage VDATA during the data writing period PDW, and the same ramp signal (such as Vran, Vrap). In this way, the driving method of the pixels of the display panel (such as 100) can be simplified, and the image sticking caused by sequential lighting can be avoided.
在本發明的另一實施例中,所有畫素(如PX、PXa~PXf)可分為多個畫素群組,以依序寫入對應的資料電壓VDATA及依序點亮,其中畫素群組是以一列為單位,亦即各個畫素群組包至少一列的畫素(如PX、PXa~PXf)。各個畫素群組中的畫素(如PX、PXa~PXf)在資料寫入期間PDW中皆會接收對應的資料電壓VDATA,並且在發光期間PLT中會接收同一斜坡信號(如Vran、Vrap),亦即不同的畫素群組的畫素(如PX、PXa~PXf)在發光期間PLT中接收不同的斜坡信號(如Vran、Vrap)。藉此,可縮短資料寫入期間PDW的所需時間,亦即可延長發光期間PLT的時間,進而各個畫素(如PX、PXa~PXf)可具有更長的發光時間。In another embodiment of the present invention, all pixels (such as PX, PXa ~ PXf) can be divided into multiple pixel groups, and the corresponding data voltages VDATA are sequentially written and lighted sequentially, in which pixels A group is a unit of a row, that is, each pixel group includes at least one row of pixels (such as PX, PXa ~ PXf). The pixels in each pixel group (such as PX, PXa ~ PXf) will receive the corresponding data voltage VDATA during the data writing period PDW, and the same ramp signal (such as Vran, Vrap) will be received during the light-emitting period PLT That is, pixels of different pixel groups (such as PX, PXa ~ PXf) receive different slope signals (such as Vran, Vrap) during the light-emitting period PLT. Thereby, the time required for PDW in the data writing period can be shortened, and the PLT time in the light-emitting period can be extended, and each pixel (such as PX, PXa ~ PXf) can have a longer light-emitting time.
圖8為依據本發明一實施例的畫素的驅動方法的流程圖。請參照圖8,在本實施例中,畫素具有發光二極體,並且畫素的驅動方法包括下列步驟。在步驟S810中,在資料寫入期間,判定資料電壓與參考電壓的電壓差。在步驟S820中,在發光期間,依據電壓差決定提供定電流至發光二極體的提供時間。其中,步驟S810及S820的順序為用以說明,本發明實施例不以此為限。並且,步驟S810及S820的相關細節可參照圖1、圖2A、圖2B、圖3A、圖3B、圖4A、圖4B、圖5A、圖5B、圖6A、圖6B、圖7A及圖7B的實施例所示,在此則不再贅述。FIG. 8 is a flowchart of a pixel driving method according to an embodiment of the present invention. Referring to FIG. 8, in this embodiment, the pixel has a light emitting diode, and the driving method of the pixel includes the following steps. In step S810, during the data writing period, a voltage difference between the data voltage and the reference voltage is determined. In step S820, during the light emission period, the supply time of providing a constant current to the light emitting diode is determined according to the voltage difference. The sequence of steps S810 and S820 is for illustration, and the embodiment of the present invention is not limited thereto. And, for details of steps S810 and S820, please refer to FIGS. 1, 2A, 2B, 3A, 3B, 4A, 4B, 5A, 5B, 6A, 6B, 7A and 7B. As shown in the embodiment, it will not be repeated here.
舉例來說,在部分的實施例中,畫素的驅動方法更包括:在發光期間,形成位於重置電壓與頂點電壓之間的至少一鋸齒波;在發光期間,依據電壓差位移至少一鋸齒波;以及,在發光期間,比較位移後的至少一鋸齒波與電晶體的臨界電壓以決定定電流提供至發光二極體的提供時間。其中,參考電壓位於重置電壓與頂點電壓之間。在部分的實施例中,畫素的驅動方法更包括:在資料寫入期間及重置期間,阻擋定電流提供至發光二極體。For example, in some embodiments, the pixel driving method further includes: forming at least one sawtooth wave between the reset voltage and the peak voltage during the light emission period; and shifting at least one sawtooth according to the voltage difference during the light emission period. And, during the light emission period, comparing the shifted at least one sawtooth wave with the threshold voltage of the transistor to determine the supply time of the constant current to the light emitting diode. The reference voltage is between the reset voltage and the peak voltage. In some embodiments, the pixel driving method further includes: blocking a constant current from being supplied to the light emitting diode during a data writing period and a reset period.
綜上所述,本發明實施例的顯示面板及其畫素的驅動方法,由於發光二極體是透過定電流的提供時間來決定發光二極體的整體發光亮度,而定電流的提供時間是根據參考電壓與資料電壓之間的電壓差,因此可避免發光二極體微小化後電流變化所導致的色偏。並且,顯示面板中所有的畫素接收同一斜坡信號,藉此可簡化顯示面板的畫素的驅動方式,並且可避免循序點亮所造成的畫面殘影。或者,顯示面板中所有畫素可分為多個畫素群組,各個畫素群組中的畫素接收同一斜坡信號,並且不同的畫素群組的畫素接收不同的斜坡信號,藉此各個畫素可具有更長的發光時間。In summary, in the display panel and the pixel driving method of the embodiment of the present invention, since the light-emitting diode determines the overall light-emitting brightness of the light-emitting diode through the supply time of the constant current, the supply time of the constant current is According to the voltage difference between the reference voltage and the data voltage, the color shift caused by the current change after miniaturizing the light emitting diode can be avoided. In addition, all the pixels in the display panel receive the same ramp signal, thereby simplifying the driving method of the pixels of the display panel and avoiding the image sticking caused by sequential lighting. Alternatively, all pixels in the display panel can be divided into multiple pixel groups. The pixels in each pixel group receive the same ramp signal, and the pixels of different pixel groups receive different ramp signals. Each pixel may have a longer lighting time.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
100‧‧‧顯示面板100‧‧‧ display panel
110‧‧‧控制線110‧‧‧Control line
120‧‧‧資料線120‧‧‧ Data Line
C1~C3‧‧‧電容C1 ~ C3‧‧‧Capacitor
ida~idf‧‧‧驅動電流ida ~ idf‧‧‧Drive current
iFX‧‧‧定電流iFX‧‧‧Constant current
OLD1‧‧‧發光二極體OLD1‧‧‧light-emitting diode
OVDD、OVSS、OVDDx‧‧‧系統電壓OVDD, OVSS, OVDDx‧‧‧ system voltage
PDW‧‧‧資料寫入期間PDW‧‧‧Data writing period
PLT‧‧‧發光期間PLT‧‧‧lighting period
PRT‧‧‧重置期間PRT‧‧‧ Reset period
PWT1‧‧‧正寫入脈波PWT1‧‧‧ is writing pulse
PWT2‧‧‧負寫入脈波PWT2‧‧‧Negative write pulse
PX、PXa~PXf‧‧‧畫素PX, PXa ~ PXf‧‧‧ pixels
PXA‧‧‧畫素陣列PXA‧‧‧Pixel Array
SLTn、SLTp‧‧‧發光控制信號SLTn, SLTp ‧‧‧light control signal
SRi、SRia~SRif‧‧‧定電流源SRi, SRia ~ SRif‧‧‧Constant current source
SSCn、SSCp‧‧‧開關控制信號SSCn, SSCp‧‧‧ Switch control signal
SWTn、SWTp‧‧‧寫入控制信號SWTn, SWTp‧‧‧ write control signal
T11~T13、T21~T23、T31~T34、T41~T44、T51~T55、T61~T65‧‧‧電晶體T11 ~ T13, T21 ~ T23, T31 ~ T34, T41 ~ T44, T51 ~ T55, T61 ~ T65‧‧‧Transistors
TCX、TCXa~TCXf‧‧‧時間控制單元TCX, TCXa ~ TCXf‧‧‧ Time Control Unit
TPR‧‧‧提供時間TPR‧‧‧ provides time
VBa~VBf‧‧‧偏壓VBa ~ VBf‧‧‧ bias
VDATA‧‧‧資料電壓VDATA‧‧‧Data voltage
VDDH‧‧‧高電壓VDDH‧‧‧High voltage
VDDL‧‧‧低電壓VDDL‧‧‧Low voltage
VDF‧‧‧電壓差VDF‧‧‧Voltage difference
VGa~VGf‧‧‧閘極電壓VGa ~ VGf‧‧‧Gate voltage
Vran、Vrap‧‧‧斜坡信號Vran, Vrap ‧‧‧ Ramp signal
VREF‧‧‧參考電壓VREF‧‧‧Reference voltage
VRTn、VRTp‧‧‧重置電壓VRTn, VRTp‧‧‧ reset voltage
Vth1~Vth6‧‧‧臨界電壓Vth1 ~ Vth6‧‧‧ critical voltage
VTn、VTp‧‧‧頂點電壓VTn, VTp‧‧‧ peak voltage
S810、S820‧‧‧步驟S810, S820‧‧‧step
圖1為依據本發明一實施例的顯示面板的系統示意圖。 圖2A為依據本發明第一實施例的圖1的顯示面板的畫素的電路示意圖。 圖2B為依據本發明第一實施例的圖2A的畫素的驅動示意圖。 圖3A為依據本發明第二實施例的圖1的顯示面板的畫素的電路示意圖。 圖3B為依據本發明第二實施例的圖3A的畫素的驅動示意圖。 圖4A為依據本發明第三實施例的圖1的顯示面板的畫素的電路示意圖。 圖4B為依據本發明第三實施例的圖4A的畫素的驅動示意圖。 圖5A為依據本發明第四實施例的圖1的顯示面板的畫素的電路示意圖。 圖5B為依據本發明第四實施例的圖5A的畫素的驅動示意圖。 圖6A為依據本發明第五實施例的圖1的顯示面板的畫素的電路示意圖。 圖6B為依據本發明第五實施例的圖6A的畫素的驅動示意圖。 圖7A為依據本發明第六實施例的圖1的顯示面板的畫素的電路示意圖。 圖7B為依據本發明第六實施例的圖2A的畫素的驅動示意圖。 圖8為依據本發明一實施例的畫素的驅動方法的流程圖。FIG. 1 is a system schematic diagram of a display panel according to an embodiment of the present invention. FIG. 2A is a schematic circuit diagram of pixels of the display panel of FIG. 1 according to the first embodiment of the present invention. FIG. 2B is a driving schematic diagram of the pixel of FIG. 2A according to the first embodiment of the present invention. 3A is a schematic circuit diagram of a pixel of the display panel of FIG. 1 according to a second embodiment of the present invention. FIG. 3B is a driving schematic diagram of the pixel of FIG. 3A according to the second embodiment of the present invention. 4A is a schematic circuit diagram of a pixel of the display panel of FIG. 1 according to a third embodiment of the present invention. FIG. 4B is a driving schematic diagram of the pixel of FIG. 4A according to the third embodiment of the present invention. 5A is a schematic circuit diagram of a pixel of the display panel of FIG. 1 according to a fourth embodiment of the present invention. FIG. 5B is a driving schematic diagram of the pixel of FIG. 5A according to the fourth embodiment of the present invention. 6A is a schematic circuit diagram of a pixel of the display panel of FIG. 1 according to a fifth embodiment of the present invention. FIG. 6B is a driving schematic diagram of the pixel of FIG. 6A according to a fifth embodiment of the present invention. FIG. 7A is a schematic circuit diagram of pixels of the display panel of FIG. 1 according to a sixth embodiment of the present invention. FIG. 7B is a driving schematic diagram of the pixel of FIG. 2A according to a sixth embodiment of the present invention. FIG. 8 is a flowchart of a pixel driving method according to an embodiment of the present invention.
Claims (13)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106124262A TWI623927B (en) | 2017-07-20 | 2017-07-20 | Display panel and method for driving pixel thereof |
CN201710724699.XA CN107481662B (en) | 2017-07-20 | 2017-08-22 | Display panel and driving method of pixels thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW106124262A TWI623927B (en) | 2017-07-20 | 2017-07-20 | Display panel and method for driving pixel thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI623927B true TWI623927B (en) | 2018-05-11 |
TW201909153A TW201909153A (en) | 2019-03-01 |
Family
ID=60601982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW106124262A TWI623927B (en) | 2017-07-20 | 2017-07-20 | Display panel and method for driving pixel thereof |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN107481662B (en) |
TW (1) | TWI623927B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110033731B (en) * | 2018-04-18 | 2020-09-25 | 友达光电股份有限公司 | Composite driving display panel |
US10600356B1 (en) | 2018-11-14 | 2020-03-24 | a.u. Vista Inc. | Display systems and methods involving time-modulated current control |
WO2020140287A1 (en) | 2019-01-04 | 2020-07-09 | 京东方科技集团股份有限公司 | Pixel circuit and driving method thereof, display panel, and display device |
CN110689849B (en) * | 2019-11-08 | 2021-03-02 | 京东方科技集团股份有限公司 | Display panel, driving method thereof and display device |
CN111785201B (en) * | 2020-07-02 | 2021-09-24 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit and driving method thereof, display panel and display device |
TWI746267B (en) * | 2020-11-17 | 2021-11-11 | 友達光電股份有限公司 | Display panel |
US11723131B2 (en) * | 2021-04-09 | 2023-08-08 | Innolux Corporation | Display device |
TWI796723B (en) * | 2021-07-06 | 2023-03-21 | 友達光電股份有限公司 | Display device |
CN114299872B (en) * | 2022-01-04 | 2023-07-18 | 京东方科技集团股份有限公司 | Driving circuit, driving method thereof and display device |
CN116543691B (en) * | 2023-05-19 | 2024-04-02 | 华南理工大学 | Gate driving circuit, active electroluminescent display and driving method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1604472A (en) * | 2003-09-29 | 2005-04-06 | 三洋电机株式会社 | Ramp voltage generating apparatus and active matrix drive-type display apparatus |
TW200717406A (en) * | 2005-07-21 | 2007-05-01 | Seiko Epson Corp | Electronic circuit, electronic device, method of driving electronic device, electro-optical device, and electronic apparatus |
TW200727260A (en) * | 2005-12-06 | 2007-07-16 | Pioneer Corp | Active matrix display apparatus and driving method therefor |
TW200731202A (en) * | 2002-04-26 | 2007-08-16 | Toshiba Matsushita Display Tec | EL display device |
TW200933571A (en) * | 2007-10-31 | 2009-08-01 | Hitachi Displays Ltd | Image display device |
TW201131545A (en) * | 2010-03-10 | 2011-09-16 | Au Optronics Corp | Pixel circuit and driving method thereof and display panel and display using the same |
TW201447860A (en) * | 2013-06-12 | 2014-12-16 | Sony Corp | Comparator circuit, a/d conversion circuit, and display device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100409290C (en) * | 2001-12-14 | 2008-08-06 | 三洋电机株式会社 | Digitally driven type display device |
JP2004246320A (en) * | 2003-01-20 | 2004-09-02 | Sanyo Electric Co Ltd | Active matrix drive type display device |
CN103839520B (en) * | 2014-02-28 | 2017-01-18 | 京东方科技集团股份有限公司 | Pixel circuit, method for driving pixel circuit, display panel and display device |
CN104361857A (en) * | 2014-11-04 | 2015-02-18 | 深圳市华星光电技术有限公司 | Pixel driving circuit of organic light-emitting display |
CN104680976B (en) * | 2015-02-09 | 2017-02-22 | 京东方科技集团股份有限公司 | Pixel compensation circuit, display device and driving method |
TWI603313B (en) * | 2016-10-18 | 2017-10-21 | 友達光電股份有限公司 | Display control circuit and operation method thereof |
-
2017
- 2017-07-20 TW TW106124262A patent/TWI623927B/en active
- 2017-08-22 CN CN201710724699.XA patent/CN107481662B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200731202A (en) * | 2002-04-26 | 2007-08-16 | Toshiba Matsushita Display Tec | EL display device |
CN1604472A (en) * | 2003-09-29 | 2005-04-06 | 三洋电机株式会社 | Ramp voltage generating apparatus and active matrix drive-type display apparatus |
TW200717406A (en) * | 2005-07-21 | 2007-05-01 | Seiko Epson Corp | Electronic circuit, electronic device, method of driving electronic device, electro-optical device, and electronic apparatus |
TW200727260A (en) * | 2005-12-06 | 2007-07-16 | Pioneer Corp | Active matrix display apparatus and driving method therefor |
TW200933571A (en) * | 2007-10-31 | 2009-08-01 | Hitachi Displays Ltd | Image display device |
TW201131545A (en) * | 2010-03-10 | 2011-09-16 | Au Optronics Corp | Pixel circuit and driving method thereof and display panel and display using the same |
TW201447860A (en) * | 2013-06-12 | 2014-12-16 | Sony Corp | Comparator circuit, a/d conversion circuit, and display device |
Also Published As
Publication number | Publication date |
---|---|
TW201909153A (en) | 2019-03-01 |
CN107481662A (en) | 2017-12-15 |
CN107481662B (en) | 2020-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI623927B (en) | Display panel and method for driving pixel thereof | |
US10217412B2 (en) | OLED display device drive system and OLED display drive method | |
US9728128B2 (en) | Pixel circuit, driving method thereof and display panel | |
US20170039935A1 (en) | Display panel and pixel circuit | |
US20170263187A1 (en) | Organic light-emitting pixel driving circuit, driving method thereof, and organic light-emitting display panel | |
TWI441138B (en) | Light emitting diode circuitry, method for driving light emitting diode circuitry and display | |
US20170110055A1 (en) | Pixel circuit, driving method thereof and related devices | |
US9361828B2 (en) | Pixel driving circuit for organic light emitting diode display and operating method thereof | |
WO2018032899A1 (en) | Pixel circuit, method for driving same, display panel, and display device | |
US9779659B2 (en) | Pixel architecture and driving method thereof | |
US20170352316A1 (en) | Pixel circuit and drive method therefor, and active matrix organic light-emitting display | |
TWI556210B (en) | Pixel unit and driving method thereof | |
WO2018119747A1 (en) | Oled pixel compensation circuit, and oled display device | |
US10102795B2 (en) | Operating method of display device and display device | |
US8692820B2 (en) | Organic light emitting display and method for driving the same | |
CN111243498B (en) | Pixel circuit, driving method thereof and display device | |
CN109637454B (en) | Light emitting diode pixel circuit and display panel | |
TW202042201A (en) | Pixel circuit capable of adjusting pulse width of driving current and related display panel | |
CN111583857B (en) | Pixel driving circuit, driving method thereof and display panel | |
KR20210027672A (en) | Pixel circuit | |
TWI685831B (en) | Pixel circuit and driving method thereof | |
WO2018033014A1 (en) | Pixel circuit and driving method therefor, array substrate and display device | |
CN109493789B (en) | Pixel circuit | |
TWI766639B (en) | Self-luminous pixel circuit | |
JP2014038168A (en) | Display device, electronic appliance, driving method, and driving circuit |