TW201131545A - Pixel circuit and driving method thereof and display panel and display using the same - Google Patents
Pixel circuit and driving method thereof and display panel and display using the same Download PDFInfo
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201131545 AUuyn〇86 33651twf.doc/n 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種平面顯示技術,且特別是有關於 一種關聯於有機發光二極體的晝素電路與其驅動方法以及 所應用之顯示面板與顯示器。 【先前技術】 邁入二十一世紀後,電子產品的趨勢將逐漸朝向輕巧 ,以及傳輸大量的資訊和影像。有鑑於此,人們逐漸需要 符合未來生活的新一代平面顯示器。自1987年美國柯達公 司發表具實用潛力的有機發光二極體(organic light emitting diode,以下簡稱0LED)元件至今,已吸引無數 亞洲以及歐美各國投人〇LED^㈣研究以及量產,傲 然已經被視為繼薄膜電晶體液晶顯示器(tWn film transistor liquid crystal display,以下簡稱 tft LCD)後, 未來隶具發展潛力的平面顯示技術之一。 0LED受到青睞的原因除了具有自發光、高應答速度 特性(lus)、省電(功率消耗僅TFT^CD的三分之一)、 輕薄(面板厚度可小於lmm)、廣視角(18〇度)、廣色 域(NTSC 100%以上)、低操作電壓(3_1〇v)、高對比 (可達104 : 1)等優點外’另有製程簡單低成本、可應用 於换曲性面板等特色。201131545 AUuyn〇86 33651twf.doc/n VI. Description of the Invention: [Technical Field] The present invention relates to a flat display technology, and in particular to a halogen circuit associated with an organic light emitting diode and its driving The method and the display panel and display to which it is applied. [Prior Art] After entering the 21st century, the trend of electronic products will gradually become lighter and transmit a large amount of information and images. In view of this, there is a growing need for a new generation of flat panel displays that are compatible with future life. Since 1987, the United States Kodak Company has published a practical light emitting diode (hereinafter referred to as 0LED) component, which has attracted countless Asian and European and American countries to invest in LED^(4) research and mass production. It is regarded as one of the flat display technologies that have the potential to develop in the future after the tWn film transistor liquid crystal display (hereinafter referred to as tft LCD). 0LED is favored for reasons other than self-illumination, high response speed (lus), power saving (power consumption is only one-third of TFT^CD), thin and light (panel thickness can be less than 1mm), wide viewing angle (18 degrees) Wide color gamut (NTSC 100% or more), low operating voltage (3_1〇v), high contrast (up to 104: 1), etc. The other process is simple and low-cost, and can be applied to the characteristics of the curved panel.
現今0LED顯示器大致可分為被動式矩陣(口批^^ matrix ) 〇L;ED顯示器與主動式矩陣(active )〇LED 201131545 AU0911086 33651twf.doc/n ,示器。前者的驅動方式主要是利用掃描手段/機制來瞬間 產生向亮度,故而耗電力較高、元件較易劣化,而且不適 合發展高解析度面板;另外,後者主要驅動方式為利用薄 膜電晶體(TFT)元件’並且搭配電容來儲存不同的資料 訊號,藉以控制面板上之各個晝素的灰階(grayscal〇、。 ^由於主動式矩陣〇LED顯示器在掃描過後,晝素仍然 能保持原有的亮度,而且主動式矩陣〇LED顯示器並不需 • 要_到非常高的亮度。因此,相較於被動式矩陣〇LED 顯不器而言,主動式矩陣OLED顯示器不但可以達到較佳 的壽命表現,且也可以達成高解析度的需求。因此,目前 研究均朝向可用於大型面板的主動式矩陣〇LED顯示器 進。 然而,OLED元件所遇最大問題即為產生劣化,其原 因分為非本質劣化與本質劣化。其中,非本質劣化势短 或封裝時造成的元件衰退,其主要表現在黑點(dark印⑽) 的產生’料’本質劣化為0LED元件在持續耗的狀況 下’其亮度會隨著時間增加而慢慢衰減,此一現象非由外 界所造成,而是OLED元件本身使用一段時間後所產生的 劣化。至目刖為止,研究此一現象之成果可謂百家爭鳴。 OUD元件的本質劣化是影響〇LED面板均勾性的主 要原因,而成因為OLED之畫素電路中的薄膜電晶體 (TFT)元件在長時間受正偏壓所造成之臨界電a = (threshold voltage, Vth)的飄移(drift)。如圖 1 所示, 其為現今最簡單之OLED的晝素電路(2Tlc)1〇〇示意圖。 201131545 AU0911086 3365ltwf.d〇c/n 請參照圖1,晝素電路100的運作原理大致為:當掃描線 SL所接收之掃描訊號vscan致使薄膜電晶體T1導通時, 此時資料線DL所接收的資料訊號Vdata會儲存在電容Cc 内;另外,當掃描線SL所接收之掃描訊號Vscan致使薄 膜電晶體T1關閉時,薄膜電晶體T2會導通,藉以致使儲 存在電容Cc的電壓會對應到給予〇leD的驅動電流i〇led。 如下公式(1)所示,其表示為流經〇LED的驅動電流 Ioled : 她…公式(1) 其中,K為薄膜電晶體T2的製程參數(為常數).; VGs為薄膜電晶體T2之閘源極間的電壓;而為薄膜電 晶體Τ2的臨界電壓。 由於薄膜電晶體Τ2之臨界電壓vth會因長時間處於 正偏壓驅動而產生飄移,所以一旦薄膜電晶體T2的臨界 電壓Vth產生飄移,就會直接影響流經〇LED的電流1〇1以 大小。如此一來,各OLED.晝素電路反應相同之資料訊號 Vdata所流經的電流大小就會不同,從而使得各〇led晝 素所呈現的灰階也會不同,而這也是影響〇LED面板均勻 性的主因。此一現象不但導致〇LED面板壽命與目前市面 上之TFT LCD面板差異極大,且更導致〇LED面板無法 順利大量量產。 【發明内容】 有鑒於此,本發明提供—種晝素電路,其得以補償薄 201131545 AUUyi 1086 33651twf.doc/n 膜電晶體的臨界電壓飄移、延緩OLED元件產生 、 及降低資料訊號的輸入複雜度。 ' 本發明提供-種晝素電路,其包括第—至第四帝曰 體、固定電流源、電容,以及發光元件。其巾,第一 曰曰 體的第-汲/源则以接收資料訊號。第二電晶體的間極曰用曰 以接收掃描訊號,而第二電晶體的第—汲/源極電性連 一電晶體的第二汲/源極。固定電流源電性連接於第二 體之第二汲/源極與接地電位之間。第三電晶體的閘=用= 接收掃描訊號,第三電晶體的第一汲/源極電性連接第二電 晶!的第-汲./源極’而第三電晶體的第二汲/源極電:連 接第-電晶體的閘極。電容的第—端電性連接第—電晶體 的閘極’而電容的第二端用以接收時變訊號。第四電晶 的閘極電性連接第—電晶體的閘極,而第四電晶體的第— =/源極電性連接至系統高電壓。發光元件的陽極電性 第四电日日體的第二汲/源極,而發光元件的陰極電性 糸統低電壓。 或方實施例中’時變訊號可以為鑛齒波觸 f m#U,第—至第四電晶體可以為ρ型電晶體,以及 S光元件可以為有機發光二極體。 本發明另提供-種具有上述本發明所提出之晝 的顯不面板與其所應用之顯示器。 /、 一於本4明的一貫施例中,時變訊號的頻率實質上 顯示器的晝面更新率。 、、、’ 本备明又提供—種適於_具有—有機發光二極體之 201131545 AUUy 11086 33651twf.doc/n 晝素電路的驅動方法,其包括:於一畫面期間的充電期間, 反應於晝素電路所接收之掃描訊號與資料訊號,而控制畫 素電路中用以驅動有機發光二極體之電晶體的閘極電壓等 於資料訊號的電壓準位,並且致使有機發光二極體發光· 以及於同一晝面期間的調整期間,反應於晝素電路所接吹 之時變訊號(可以為鋸齒波訊號或方波訊號,但不限制於 此),而提升用以驅動有機發光二極體之電晶體的閘極電 壓,直至此電晶體關閉為止,並且致使有機發光二極體作 止發光。 於本發明的一實施例中,流經有機發光二極體的電流 與用以驅動有機發光二極體之電晶體的臨限電壓無關。 本發明更提供一種晝素電路,其包括發光元件與驅動 單元。其中,驅動單元電性連接發光元件,用以反應於資 料訊號與掃描訊號而致使發光元件發光,並且反應於時變 訊號而致使發光元件停止發光。 基於上述,本發明所提出的晝素電路至少具有以下幾 點特點: 1、 利用電流鏡補償方式來補償用以驅動發光元件(亦 即OLED元件)之電晶體的臨界電壓飄移; 2、 藉由施加時變訊號以讓畫素電路之〇LED元件在 每-晝面期間均有停止發光的休息時間,從而來延缓 OLED元件產生劣化;以及 L、彻定電流祕gq壓型態輸人的資料訊號來 控制旦素電路所呈現的灰階,如此一來僅需設計合適的固 201131545 AU0911086 33651twf.doc/n 定電流,(毋需使賴雜的可變電流源)以搭配電壓型態 輸入的資料減處理;即可’藉以達成降低資料訊號輸 入的複雜度。 —應瞭解的是’上述-般描述及町具體實施方式僅為 例示性及闡釋性的’其並不能限制本發明所欲主張之範圍。 【實施方式】. 現將詳細參考本發明之示範性實施例,在附圖中說明 所述示範性實施例之實例。另外,凡可能之處,在圖式及 貫把方式中使用相同“號的元件/構件代表相同或類似部 分。 圖2繪示為本發明一實施例之主動式矩陣有機發光二 極體(AMOLED)顯示器200的示意圖。請參照圖2,_主 動式矩陣有機發光二極體顯示器200包括顯示面板2〇1、 資料驅動裝置203、掃描驅動裝置205,以及時變訊號產生 窃207。於本貫施例中顯示面板2〇1包括至少一條電性 連接至資料驅動裝置203的資料線DL、至少一條電性連 接至掃描驅動裝置205的掃描線SL以及至少一晝素電路 Pix,而且晝素電路Pix包含有發光元件OLED (亦即有機 發光二極體)與驅動單元DU。 於本實施例中,驅動單元DU電性連接發光元件 OLED,用以反應於資料驅動裝置203所提供的資料訊號 (data signal) Vdata與掃描驅動裝置205所提供的掃描訊 號(scan signal) Vscan而致使發光元件OLED發光,並且Today's OLED displays can be roughly divided into passive matrix (portal batch ^^ matrix) 〇L; ED display and active matrix (active) 〇LED 201131545 AU0911086 33651twf.doc/n, display. The driving method of the former is mainly to use the scanning means/mechanism to instantaneously generate the brightness, so the power consumption is high, the components are easily deteriorated, and it is not suitable for developing a high-resolution panel; in addition, the latter main driving mode is to utilize a thin film transistor (TFT). The component 'and the capacitor to store different data signals, so as to control the gray scale of each element on the panel (grayscal〇, ^ because the active matrix 〇 LED display after scanning, the enamel can still maintain the original brightness, Moreover, active matrix 〇 LED displays do not require a very high brightness. Therefore, active matrix OLED displays can achieve better lifetime performance than passive matrix 〇 LED displays. High resolution requirements can be achieved. Therefore, current research is directed toward active matrix 〇LED displays that can be used for large panels. However, the biggest problem encountered with OLED components is degradation, which is divided into non-essential degradation and essential degradation. Among them, the non-essential deterioration potential is short or the component degradation caused by encapsulation is mainly manifested in black spots. The production of dark printing (10)) is degraded to the fact that the OLED component is slowly attenuated with increasing time. The phenomenon is not caused by the outside world, but the OLED component itself is used for a period of time. After the deterioration, the results of studying this phenomenon can be described as a hundred schools of thought. The essential degradation of OUD components is the main reason that affects the hooking of 〇LED panels, resulting in thin film transistors in OLED pixel circuits. (TFT) The drift of the critical electric a = (threshold voltage, Vth) caused by positive bias for a long time. As shown in Figure 1, it is the simplest OLED pixel circuit (2Tlc). 1〇〇 schematic diagram 201131545 AU0911086 3365ltwf.d〇c/n Referring to FIG. 1, the operation principle of the pixel circuit 100 is roughly as follows: when the scanning signal vscan received by the scanning line SL causes the thin film transistor T1 to be turned on, the data is The data signal Vdata received by the line DL is stored in the capacitor Cc. In addition, when the scanning signal Vscan received by the scanning line SL causes the thin film transistor T1 to be turned off, the thin film transistor T2 is turned on, so that the film transistor T2 is turned on. The voltage stored in the capacitor Cc corresponds to the drive current i〇led given to 〇leD. As shown in the following formula (1), it is expressed as the drive current Ioled through the 〇LED: she...the formula (1) where K is a film Process parameter of transistor T2 (constant); VGs is the voltage between the gate and source of the thin film transistor T2; and is the threshold voltage of the thin film transistor Τ2. Since the threshold voltage vth of the thin film transistor Τ2 will be in the long time The positive bias drive drives the drift, so once the threshold voltage Vth of the thin film transistor T2 drifts, it directly affects the current flowing through the 〇LED by 1〇1. In this way, the currents flowing through the same data signal Vdata of each OLED. 昼 电路 circuit will be different, so that the gray scales of each 昼 led 昼 也会 will be different, and this also affects the 〇 LED panel uniformity. The main cause of sex. This phenomenon not only causes the life of the LED panel to be greatly different from that of the TFT LCD panel currently on the market, but also causes the 〇LED panel to fail mass production. SUMMARY OF THE INVENTION In view of the above, the present invention provides a pixel circuit that compensates for the threshold voltage drift of the thin film 201131545 AUUyi 1086 33651 twf.doc/n, delays the generation of OLED elements, and reduces the input complexity of data signals. . The present invention provides a pixel circuit including a first to fourth emperor body, a fixed current source, a capacitor, and a light-emitting element. The towel, the first 汲/source of the first 曰曰 body, receives the data signal. The second transistor has a 曰 to receive the scan signal, and the first 源/source of the second transistor is electrically connected to the second 汲/source of the transistor. The fixed current source is electrically connected between the second 汲/source of the second body and the ground potential. The gate of the third transistor = receiving the scanning signal with =, the first 源/source of the third transistor is electrically connected to the second transistor! The first 汲./source' and the second 源/source of the third transistor: the gate of the first transistor is connected. The first end of the capacitor is electrically connected to the gate of the first transistor and the second end of the capacitor is used to receive the time varying signal. The gate of the fourth transistor is electrically connected to the gate of the first transistor, and the -=/source of the fourth transistor is electrically connected to the system high voltage. The anode of the light-emitting element has a second 汲/source of the fourth electric day, and the cathode of the light-emitting element has a low voltage. In the embodiment, the time-varying signal may be a mineral tooth wave contact f m#U, the first to fourth transistors may be a p-type transistor, and the S-light element may be an organic light-emitting diode. The present invention further provides a display panel having the above-described enamel proposed by the present invention and a display to which the same is applied. /, In the consistent example of this, the frequency of the time-varying signal is substantially the update rate of the display. , , , 'This specification provides a driving method for the 201131545 AUUy 11086 33651twf.doc/n 昼 电路 circuit suitable for _ with - organic light-emitting diode, which includes: during charging during a picture, reacting to The scanning signal and the data signal received by the pixel circuit, and the gate voltage of the transistor for driving the organic light emitting diode in the pixel circuit is equal to the voltage level of the data signal, and causes the organic light emitting diode to emit light. And during the adjustment period of the same kneading period, the time-varying signal (which may be a sawtooth wave signal or a square wave signal, which may be a sawtooth wave signal or a square wave signal), and is promoted to drive the organic light emitting diode The gate voltage of the transistor until the transistor is turned off, and causes the organic light emitting diode to stop emitting light. In an embodiment of the invention, the current flowing through the organic light emitting diode is independent of the threshold voltage of the transistor used to drive the organic light emitting diode. The present invention further provides a halogen circuit including a light emitting element and a driving unit. The driving unit is electrically connected to the light-emitting element for reacting to the signal signal and the scanning signal to cause the light-emitting element to emit light, and reacting to the time-varying signal to cause the light-emitting element to stop emitting light. Based on the above, the pixel circuit proposed by the present invention has at least the following features: 1. Using a current mirror compensation method to compensate for the threshold voltage drift of the transistor for driving the light emitting element (ie, the OLED element); Applying a time-varying signal to allow the LED elements of the pixel circuit to have a rest time to stop emitting light during each-plane period, thereby delaying the degradation of the OLED element; and L, the data of the current-glock type input type The signal controls the gray scale of the denier circuit, so that only the appropriate solid 201131545 AU0911086 33651twf.doc/n constant current is needed, (there is no need to make the variable current source) to be input with the voltage type. Data reduction processing; can be used to reduce the complexity of data signal input. It should be understood that the above description and the specific embodiments are merely illustrative and illustrative and are not intended to limit the scope of the invention. [Embodiment] Reference will now be made in detail to the exemplary embodiments embodiments In addition, wherever possible, the same elements or components in the drawings and the like represent the same or similar parts. FIG. 2 illustrates an active matrix organic light emitting diode (AMOLED) according to an embodiment of the invention. A schematic diagram of the display 200. Referring to FIG. 2, the active matrix organic light emitting diode display 200 includes a display panel 2, a data driving device 203, a scan driving device 205, and a time-varying signal generating 207. In the embodiment, the display panel 2〇1 includes at least one data line DL electrically connected to the data driving device 203, at least one scan line SL electrically connected to the scan driving device 205, and at least one pixel circuit Pix, and the pixel circuit The Pix includes a light-emitting element OLED (ie, an organic light-emitting diode) and a driving unit DU. In this embodiment, the driving unit DU is electrically connected to the light-emitting element OLED for reacting with the data signal provided by the data driving device 203 ( The data signal) Vdata and the scan signal Vscan provided by the scan driving device 205 cause the light emitting element OLED to emit light, and
S 9 201131545 AUUV11086 33651twf.d〇c/n 反應於時變訊號產生器207所產生的時變訊號 (time-vary signal) Vtv (例如可以是錯嵩波訊號或方波訊號,但並不 限制於此)而致使發光元件〇LED停止發光。 更清楚來說,驅動單元DU包括P型電晶體τι〜T4、 固定電流源Is,以及電gCc。其中,第一電晶體Ή的第 一汲/源極用以接收資料訊號Vdata。第二電晶體τ2的閘 極用以接收掃描訊號ν_,第二電晶體Τ2的第一沒/源 極電I"生連接第-電晶體Τ1的第二汲/源極。固定電流源Is 電性連接於第二電晶體T2之第二汲/源極與接地電位之 間。 第二電晶體T3的閘極用以接收掃描訊號Vscan,第三 電晶體T3的第一汲/源極電性連接第二電晶體T2的第一汲 /源極,而第二電晶體Τ3的第二汲/源極電性連接第一電晶 體Τ1的閘極。電容Cc的第一端電性連接第一電晶體τι 的閘極,而電容Cc的第二端用以接收時變訊號Vtv。 第四電晶體T4的閘極電性連接第一電晶體的閘極 T1,第四電晶體T4的第一汲/源極電性連接至一务高電 壓Vdd ’第四電晶體T4的第二汲/源極電性連接發光元件 〇1^〇的陽極(紐0如)’而發光元件(^£〇的陰極((^比〇心) 電性連接至一系統低電壓Vss。 基於上述,假設時變訊號產生器2〇7所產生的時變訊 5虎Vtv為鑛盘波訊^虎(sawtooth wave signal)的話(以下 換稱時變訊號Vtv為鋸齒波訊號vtv),則圖3猞示皂太 發明一實施例之晝素電路Pix在主動式矩陣有機^光:極 201131545 AU0911086 3365 ltwf.doc/n 體顯示斋200 —個畫面期間FP内掃描訊號vscan、第四電 晶體T4之閘極電壓Vg,以及流經發光元件〇LED之電流 Ioled的示意圖。請合併參照圖2與圖3,於本實施例中, 晝素電路Pix在主動式矩陣有機發光二極體顯示器2〇〇 一 個晝面期間FP内的運作狀況大致可分為兩個階段,其一 為充電期間(charging period ) A,而另一為調整期間 (adjusting period )B,且鋸齒波訊號 Vtv 的頻率(frequency ) φ 實質上等於主動式矩陣有機發光二極體顯示器200的晝面 更新率(frame rate )。 當晝素電路Pdc處於充電期間A時,其會反應於掃描 訊號Vscan與資料訊號Vdata而發光。更清楚來說,冬查 素電路P ix處於充電期間A時,掃描訊號v s c an為低^ ^ 準位。如此一來,電晶體T2和T3會導通以使得電容Cc 經時變訊號Vtv以及電晶體Τ2和T3而進行充電。於本實 施例中,當電·容Cc充電直到穩態時,第四電晶體丁4的^ 極電壓vg會基於固定電流元Is與資料訊號Vdata而呈現 春 為一個固定電壓差Vgs。也亦因如此,第四電晶體T4的閘 極電壓Vg會因此固定偏壓而被資料訊號Vdata所控制。 換言之,第四電晶體T4的閘極電壓Vg會完全依照資 號Vdata的大小所決定。 、° 旦素電路Pix經過充電期間A而決定第四電晶體T4 之閘極電壓Vg的電壓準位後,則會進入調整期間B。根 據圖3所示,第四電晶體T4的閘極電壓Vg會被逐漸上升 的鋸齒波訊號Vtv拉升。如此一來,當第四電晶體T4的 201131545 auuv 11086 33651twf.doc/n 間極電壓vg上升到達其臨限電壓vth時,發光元件〇led 便不會机經任何的電流Ι〇Μ,亦即無電流流經發光元件 OLED。 士於本實施例中’關於流經發光元件OLED的電流loled 何時會為零,以及其初始電流之大小則需視第四電晶體T4 ,閘極電壓Vg於充㈣間A所定義的電轉位而定。若 第四電晶體T4之閘極電塵Vg的電壓準位較高,則會造成 ί經發光树GLED Ioled較小,且會錄提升至 第四電晶體T4 _限電壓職,從而導致發光元件〇 led 有較長的時間不會流經任何的電流Ioled,反之亦然。 基於上述可知,晝素電路pix於充電期間A所接收的 貢料訊號別咖會決定第四電晶體T4的閘極電壓Vg大 二==畫素電路ΗΧ進入調整期間B,流經發光元 H Γ ㈣大似及發光元件_關閉的時 二ί二若主動式矩陣錢發光二極體顯示器200 的旦面更新率大於6GHz的話’則人類視覺並不 無電流流經晝素電路Pix時,發光元件〇咖無(停 發光的閃爍現象。而且’經過人眼之視覺暫留的影^,流 【二f?iED的電流ioled大小以及發光元件s〇l: 無發先的%間長短將會共同決定晝素電路他 階(grayscale)。 的灰 由此可知,晝素電路pix在每—個晝面期間 有-_料元件〇LED停止發光的休息時 = 可視實際設料求綠朴私翻降歸光树 12 201131545 AUuyn〇86 33651hvf.d〇c/n 之本質劣化的影響。 更清楚來說,圖情示為本發明—實施例之第四電晶 ^的_電壓Vg與流經發統件Ο·之電流⑽ ^擬圖。請參照圖4,圖4中所示的標號姻為系統高 二塗Vdd,標號402為第四電晶體了4制極電堡而 才:號403 4流經發光元件〇LED的電流i〇ied。從圖4可以 :J看出’當第四電晶體T4的間極電 τ晶體Τ4的臨限電壓-時,流經發光元件〇咖的= 、、ώ將打降直到第四電㈣Τ4關為止(亦即無電法 oled)。也亦因如此,本實施例利用此-電^關_象,將可以達縣低發光 化的影響。 另-方®,固定電流源Is在畫素電路pix進入 間A的電流可表示成如下公式(2) : ^ 其中’Κτι為電晶體T1的製程參數(為常數);v ^電晶體T1之閘源極間的電壓;而Vtht]為電晶體τι 2 換::二::)一來’第四電晶體T4的閘極電壓Vg可轉 VS^Vdat.a-\VTHJ\S 9 201131545 AUUV11086 33651twf.d〇c/n reacts to the time-vary signal Vtv generated by the time-varying signal generator 207 (for example, it may be an error wave signal or a square wave signal, but is not limited to This causes the light-emitting element 〇LED to stop emitting light. More specifically, the driving unit DU includes P-type transistors τι to T4, a fixed current source Is, and an electric gCc. The first 源/source of the first transistor 用以 is used to receive the data signal Vdata. The gate of the second transistor τ2 is for receiving the scan signal ν_, and the first source/source of the second transistor Τ2 is connected to the second 汲/source of the transistor Τ1. The fixed current source Is is electrically connected between the second 汲/source of the second transistor T2 and the ground potential. The gate of the second transistor T3 is for receiving the scan signal Vscan, and the first 源/source of the third transistor T3 is electrically connected to the first 汲/source of the second transistor T2, and the second transistor Τ3 The second 汲/source is electrically connected to the gate of the first transistor Τ1. The first end of the capacitor Cc is electrically connected to the gate of the first transistor τι, and the second end of the capacitor Cc is used to receive the time-varying signal Vtv. The gate of the fourth transistor T4 is electrically connected to the gate T1 of the first transistor, and the first gate/source of the fourth transistor T4 is electrically connected to the second voltage of the fourth transistor T4. The 汲/source is electrically connected to the anode of the illuminating element 而1^〇, and the cathode of the illuminating element ((^^〇) is electrically connected to a system low voltage Vss. Based on the above, Assume that the time-varying signal generator 2〇7 generates a time-changing 5 Tiger Vtv for the Sawtooth wave signal (hereinafter referred to as the time-varying signal Vtv is a sawtooth wave signal vtv), then Figure 3猞Show soap is invented in an embodiment of the pixel circuit Pix in the active matrix organic ^ light: pole 201131545 AU0911086 3365 ltwf.doc / n body display fast 200 - a screen during the FP scanning signal vscan, the fourth transistor T4 gate A schematic diagram of the pole voltage Vg and the current Ioled flowing through the light emitting element 〇LED. Referring to FIG. 2 and FIG. 3 together, in the embodiment, the pixel circuit Pix is in the active matrix organic light emitting diode display 2 The operating conditions in the FP during the squatting period can be roughly divided into two phases, one of which is the charging period. The charging period A and the other is the adjusting period B, and the frequency (frequency) φ of the sawtooth wave signal Vtv is substantially equal to the face renewal rate of the active matrix organic light emitting diode display 200 (frame) When the pixel circuit Pdc is in the charging period A, it will emit light in response to the scanning signal Vscan and the data signal Vdata. More specifically, when the wintersing circuit P ix is in the charging period A, the scanning signal vsc an is Low ^ ^ level. As a result, the transistors T2 and T3 are turned on to cause the capacitor Cc to be charged via the time varying signal Vtv and the transistors Τ 2 and T3. In this embodiment, when the capacitor Cc is charged until stable In the state, the voltage Vg of the fourth transistor D4 is a fixed voltage difference Vgs based on the fixed current element Is and the data signal Vdata. Also, the gate voltage Vg of the fourth transistor T4 is Therefore, the fixed bias voltage is controlled by the data signal Vdata. In other words, the gate voltage Vg of the fourth transistor T4 is completely determined according to the size of the resource number Vdata. The pixel circuit Pix is determined by the charging period A. After the voltage level of the gate voltage Vg of the crystal T4, the adjustment period B is entered. According to FIG. 3, the gate voltage Vg of the fourth transistor T4 is pulled up by the gradually rising sawtooth wave signal Vtv. Come, when the voltage of the terminal voltage vg of the 201131545 auuv 11086 33651twf.doc/n of the fourth transistor T4 rises to reach its threshold voltage vth, the light-emitting element 〇led will not pass any current, that is, no current. It flows through the light emitting element OLED. In the present embodiment, 'when the current loled flowing through the light-emitting element OLED will be zero, and the magnitude of its initial current depends on the fourth transistor T4, and the gate voltage Vg is defined as the electrical index defined by the charge (A). And set. If the voltage level of the gate dust Vg of the fourth transistor T4 is higher, the illuminating tree GLED Ioled is smaller, and the recording is raised to the fourth transistor T4 _ voltage limit, thereby causing the light-emitting element 〇led has a longer time and does not flow through any current Ioled, and vice versa. Based on the above, the tribute signal received by the pixel circuit pix during the charging period A determines that the gate voltage Vg of the fourth transistor T4 is greater than two == the pixel circuit ΗΧ enters the adjustment period B and flows through the illuminant H Γ (4) Large and light-emitting components _ when the second ί 若 主动 active matrix money LED display 200 has a face update rate greater than 6 GHz, then human vision does not flow without current through the pixel circuit Pix, illuminate The component 〇 无 ( ( 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停 停Together, it determines the gray scale of the pixel circuit. It can be seen that the pixel circuit pix has a break during the period of each 昼 - 〇 停止 停止 = = = = = = = = = = = = = = = = = = = = = = = = = = = = The effect of the degradation of the essence of the returning light tree 12 201131545 AUuyn〇86 33651hvf.d〇c/n. More clearly, the figure shows the _voltage Vg and the flow of the fourth electro-crystal of the invention - the embodiment Current of the unit Ο· (10) ^Picture. Please refer to Figure 4, Figure 4 The label is the system high second coating Vdd, the label 402 is the fourth transistor, and the 4th pole is the electric castle. No. 403 4 flows through the light-emitting element 〇LED current i〇ied. From Figure 4: J can see: When the threshold voltage of the inter-electrode τ crystal Τ4 of the four-transistor T4 is -, the voltage flowing through the illuminating element =, ώ, ώ will be reduced until the fourth electric (four) Τ 4 off (that is, the oled method). In this way, the present embodiment utilizes this-electrical-to-image, which can affect the low luminescence of the county. The square current, the current of the fixed current source Is entering the room A in the pixel circuit pix can be expressed as the following formula (2) ) : ^ where 'Κτι is the process parameter of transistor T1 (constant); v ^ voltage between gate and source of transistor T1; and Vtht is transistor τι 2 for::2::) The gate voltage Vg of the four transistor T4 can be transferred to VS^Vdat.a-\VTHJ\
Π …公式(3) 因此,通過第四電晶體T4而流經發光元件〇LED 電流Ioled可表示成如下公式(4):Π Equation (3) Therefore, the flow of the light through the fourth transistor T4 through the light-emitting element 〇LED current Ioled can be expressed as the following formula (4):
Ioled = KTA (Vdata -\VTH n |.Ioled = KTA (Vdata -\VTH n |.
.顺+ lKw,n|)2 …公式(4) n 201131545 AUO911086 33651twf.doc/n 其中,KT4為電晶體T4的製程參數(為常數);而 Vth,t4為電晶體Τ4的臨界電壓。 於此,假設電晶體τι的製程參數Vthti以及電晶體 T4的製程參數VTHT4沒有差異的話,則通過第四電晶體 T4而流經發光元件0LED的電流I〇led可更能表示成如 公式(5): —d = -Vdd_·..公式 基於公式(5)可以得知,第四電晶體τ4處於長時間正 偏壓所導致之臨界電壓飄移並不會影響到流經發光元件 _ OLED之電流Ioled的大小,從而使得顯示面板2〇1的均 度上升。 ^ 再者’本實施例之晝素電路Pix係以固定電流源[s搭 配電壓型態輸入的資料訊號Vdata來控制晝素電路j>jx所 呈現的灰階。如此一來,本實施例僅需設計合適的固定電 流源Is (毋需使用複雜的可變電流源)以搭配.電壓型態輸 入的資料訊號處理晶片即可,藉以達成降低資料訊號 Vdata輸入的複雜度。 φ 除此之外’雖然上述實施例係以時變訊號Vtv為鑛齒 波訊號為例來進行說明’但是本發明並不限制於此。更清 楚來說,假設時變訊號產生器207所產生的時變訊號Vtv 為方波訊號(square wave signal)的話,則圖5綠示為本 發明另一實施例之晝素電路Pix在主動式矩陣有機發光二 極體顯示器200 —個晝面期間FP内掃描訊號vscan、第四 電晶體T4之閘極電壓Vg,以及流經發光元件〇leD之電 14 201131545 AUuynu86 33651twf.doc/n 流Ioled的示意圖。 於本實施例中,當時變訊號產生器207所產生的時變 訊號Vtv為方波訊號的話(其頻率實質上也等於主動式矩 陣有機發光二極體顯示器200的晝面更新率),晝素電路.cis + lKw,n|)2 ...Formula (4) n 201131545 AUO911086 33651twf.doc/n where KT4 is the process parameter of transistor T4 (which is a constant); and Vth, t4 is the threshold voltage of transistor Τ4. Here, assuming that there is no difference between the process parameter Vthti of the transistor τι and the process parameter VTHT4 of the transistor T4, the current I 〇led flowing through the OLED OLED through the fourth transistor T4 can be more expressed as a formula (5). ): —d = -Vdd_·.. The formula is based on equation (5). It can be known that the threshold voltage drift caused by the fourth transistor τ4 being subjected to a long-term positive bias does not affect the current flowing through the light-emitting element _ OLED. The size of the Ioled is such that the uniformity of the display panel 2〇1 rises. ^ Further, the pixel circuit Pix of the present embodiment controls the gray scale represented by the pixel circuit j>jx by the fixed current source [s with the data signal Vdata input by the voltage type. In this way, the embodiment only needs to design a suitable fixed current source Is (no need to use a complex variable current source) to match the data signal input of the voltage type input processing chip, thereby achieving the reduction of the data signal Vdata input. the complexity. In addition, the above embodiment is described by taking the time-varying signal Vtv as a rock tooth signal as an example. However, the present invention is not limited thereto. More specifically, if the time-varying signal Vtv generated by the time-varying signal generator 207 is a square wave signal, then FIG. 5 is green as shown in another embodiment of the present invention. The matrix organic light-emitting diode display 200—the scanning signal vscan in the FP period, the gate voltage Vg of the fourth transistor T4, and the electricity flowing through the light-emitting element 〇leD 14 201131545 AUuynu86 33651twf.doc/n flow Ioled schematic diagram. In this embodiment, when the time-varying signal Vtv generated by the variable signal generator 207 is a square wave signal (the frequency is substantially equal to the face update rate of the active matrix organic light-emitting diode display 200), the pixel is Circuit
Pix在主動式矩陣有機發光二極體顯不器2〇〇 一個書面期 間FP内的運作狀況大致也可分為兩個階段,其—為充電 期間A’,而另一為調整期間B,。然而,由於晝素電路pix ^ 進入充電期間A,與調整期間B’係分別類似於晝素電路pix 進入充電期間A與調整期間B,故而在此並不再加以贅述 之。 另一方面,雖然上述實施例之晝素電路pix係以p型 電晶體T1〜T4為例來進行說明,但是本發明並不限制於 此。更清楚來說,在本發明其他實施例中,也可將書素電 路Pix之P型電晶體T1〜T4轉換為1^型電晶體。如此一來, 僅需將掃描訊號Vscan與時變訊號Vtv做相對應地改變, 藉以達到與上述實施例相似/類似的技術功效即可。然而, # 該等教示内容乃屬本領域具有通常知識者所熟識的技藝, 且應可自行推演/類推出,故而在此並不再加以贅述之。 —基於上述實施例所揭示的内容,圖ό繪示為本發明一 貝施例之適於驅動具有一有機發光二極體(0LED)之食 素電路的驅動方法,其包括:於—晝面期間的充電期間旦 反應於畫素電路所接收之掃描訊號與資料訊號,而控制書 巧路中用以驅動有機發光二極體之電晶體的閘極^ 於貧料訊號的電鮮位,並且致使有機發光二極體發光(步 15 201131545 AU0911086 3365 ltwf.doc/n 倾·:以及於同—晝面期_調整期間,反應於晝素 =路所接收之時變訊號(例如可以為㈣波訊號或方波訊 限制於tb),而提升用以驅動有機發光二極體之 據=卜閘極電壓,直至此電晶體關閉為止,並且致使有 機發光二極體停止發光(步驟S603)。 赴"^上所34,本發_提出的晝素電路至少具有以下幾 點特點:Pix in the active matrix organic light-emitting diode display 2 〇〇 a written period FP operation can be roughly divided into two stages, which is - charging period A ', and the other is the adjustment period B, . However, since the pixel circuit pix^ enters the charging period A, and the adjustment period B' is similar to the pixel circuit pix entering the charging period A and the adjusting period B, respectively, it will not be described herein. On the other hand, although the pixel circuit pix of the above embodiment is described by taking the p-type transistors T1 to T4 as an example, the present invention is not limited thereto. More specifically, in other embodiments of the present invention, the P-type transistors T1 to T4 of the pixel circuit Pix may be converted into a 1^-type transistor. In this way, the scanning signal Vscan only needs to be changed correspondingly to the time-varying signal Vtv, so as to achieve similar/similar technical effects as the above embodiment. However, the contents of these teachings are familiar to those of ordinary skill in the art, and should be deduced by themselves/subjects, and therefore will not be further described herein. Based on the disclosure of the above embodiments, the present invention is a driving method for driving a food circuit having an organic light emitting diode (OLED), which includes: During the charging period, the reaction signal and the data signal received by the pixel circuit are reflected, and the gate of the transistor for driving the organic light-emitting diode in the book is used to control the electric signal of the poor signal. Causing the organic light-emitting diode to emit light (step 15 201131545 AU0911086 3365 ltwf.doc/n tilting: and during the same - 昼 期 _ adjustment period, reacting to the time-varying signal received by the pixel = road (for example, it can be (four) wave The signal or square wave is limited to tb), and the voltage of the gate electrode for driving the organic light emitting diode is increased until the transistor is turned off, and the organic light emitting diode stops emitting light (step S603). "^上上34, this hair _ proposed 昼 circuit has at least the following characteristics:
電w鏡亦㈣―電晶體T1與第四電晶體 ^補你方式來補償用以驅動發光元件〇LED之電晶體(亦 I7弟四電晶體T4)的臨界電壓飄移; 2、 藉由施加時變訊號(Vtv)以讓晝素電路之發光元 ,0LED在每―晝面期間均有停止發光的休息時間,從而 來延緩0LED元件產生劣化;以及 3、 利用固定電流源搭配電壓型態輸入的資料訊號來 才二制晝素電路所呈現的灰p自b,如此—來僅需設計合適的固 定電流源(毋需使用複雜的可變電流源)以搭配電壓型態The electric w mirror is also (4) - the transistor T1 and the fourth transistor ^ complement your way to compensate the threshold voltage drift of the transistor for driving the light-emitting element 〇 LED (also I7 Si four transistor T4); The variable signal (Vtv) is used to make the illuminating element of the halogen circuit, the 0LED has a rest time to stop the illuminating during each 昼 surface, thereby delaying the degradation of the OLED element; and 3. using the fixed current source and the voltage type input The data signal comes from the ash p from the binary circuit, so that only a suitable fixed current source (no need to use a complex variable current source) is needed to match the voltage type.
輸入的資料讯號處理晶片即可,藉以達成降低資料訊號輸 入的複雜度。 雖然本發明已以實施例揭露如上,然其並非用以限定 本發明’任何所屬技術領域中具有通常知識者,在不脫離 本發明之精神和範圍内,當可作些許之更動與潤飾,故本 發明之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 16 201131545The input data signal can process the wafer, so as to reduce the complexity of data signal input. The present invention has been disclosed in the above embodiments, and it is not intended to limit the invention to those skilled in the art, and it is possible to make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims. [Simple diagram] 16 201131545
Auuyn086 33651twf.doc/n 圖l繪示為現今最簡單之有機發光二極體(0LED) 的晝素電路(2T1C)示意圖。 圖2繪示為本發明一實施例之主動式矩陣有機發光二 極體(AMOLED)顯示器的示意圖。 圖3緣示為本發明—實施彳 有機發光二極體顯示器一個書電路在主動式矩陣Auuyn086 33651twf.doc/n Figure 1 shows a schematic diagram of the simple circuit (2T1C) of the simplest organic light-emitting diode (0LED). 2 is a schematic diagram of an active matrix organic light emitting diode (AMOLED) display according to an embodiment of the invention. Figure 3 shows the invention as an implementation - an organic light-emitting diode display with a book circuit in an active matrix
晶體之間極電壓,以及流經發光以四電 圖4緣示為本發明一實施例之 =^思圖。 與流經發光元件之電流的模擬圖。 電晶體的閘極電壓 圖5繪示為本發明另—實施例之蚩 陣有機發光二極體顯示器一個書面#思素電路在主動式矩 電晶體之閘極電壓,以及流經内掃描訊號、第四 圖ό繪示為本發明一實施例^件之電流的示意圖。 光二極體(OLED)之晝素電路^於驅動具有一有機發 的驅動方法 【主要元件符號說明】 100、Pix :晝素電路 200 :主動式矩陣有機發朵_ 201 :顯示面板 一蛋體顯示器 203 .貧料驅動裝置 205 :掃描驅動裝置 207 :時變訊號產生器 SL .掃描線 DL :資料線 201131545 auuvi i086 33651twf.doc/nThe extreme voltage between the crystals, as well as the flow through the light, is shown in Fig. 4 as an embodiment of the invention. A simulation of the current flowing through the illuminating element. Gate voltage of the transistor FIG. 5 is a schematic diagram of a gated organic light-emitting diode display of the present invention, which is a gate voltage of the active-type rectangular crystal, and flows through the internal scanning signal, FIG. 4 is a schematic diagram showing currents according to an embodiment of the present invention. A photodiode (OLED) 昼 电路 circuit for driving a driving method with an organic ray [main component symbol description] 100, Pix: 昼 电路 circuit 200: active matrix organic hair _ 201: display panel - egg body display 203. Poor material driving device 205: Scanning driving device 207: Time-varying signal generator SL. Scanning line DL: data line 201131545 auuvi i086 33651twf.doc/n
Cc :電容 T1〜T4 :電晶體 DU:驅動單元 .OLED :有機發光二極體/發光元件 Vscan :掃描訊號 Vdata :資料訊號.Cc: Capacitor T1~T4: Transistor DU: Drive unit . OLED: Organic light-emitting diode/light-emitting element Vscan: Scan signal Vdata: Data signal.
Vtv:時變訊號/鋸齒波訊號/方波訊號Vtv: time-varying signal / sawtooth wave signal / square wave signal
Ioled、403 :流經有機發光二極體的電流Ioled, 403: current flowing through the organic light-emitting diode
Is .固定電流源Is a fixed current source
Vdd、401 .糸統南電壓Vdd, 401. 糸South voltage
Vss :系統低電壓Vss: system low voltage
Vgs .電晶體之閘源極間的電壓Vgs. Voltage between the gate and the source of the transistor
Vg、402 :電晶體的閘極電壓Vg, 402: gate voltage of the transistor
Vth:電晶體的臨界電壓 FP :晝面期間 A、 A’ :充電期間 B、 B’:調整期間 · S601、S603 :本發明一實施例之適於驅動具有一有機 發光二極體(OLED)之晝素電路的驅動方法各步驟 18Vth: threshold voltage of the transistor FP: facet period A, A': charging period B, B': adjustment period · S601, S603: an embodiment of the invention is suitable for driving with an organic light emitting diode (OLED) Step 18 of the driving method of the pixel circuit
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CN104966502A (en) * | 2015-05-21 | 2015-10-07 | 友达光电股份有限公司 | Liquid crystal display device with a light guide plate |
TWI594221B (en) * | 2013-11-12 | 2017-08-01 | 友達光電股份有限公司 | Pixel structure and driving method thereof |
TWI623927B (en) * | 2017-07-20 | 2018-05-11 | 友達光電股份有限公司 | Display panel and method for driving pixel thereof |
US10157570B2 (en) | 2015-05-15 | 2018-12-18 | Au Optronics Corporation | Pixel circuit and driving method thereof |
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US10102792B2 (en) | 2016-03-30 | 2018-10-16 | Novatek Microelectronics Corp. | Driving circuit of display panel and display apparatus using the same |
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KR20040019207A (en) * | 2002-08-27 | 2004-03-05 | 엘지.필립스 엘시디 주식회사 | Organic electro-luminescence device and apparatus and method driving the same |
US20070200803A1 (en) * | 2005-07-27 | 2007-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device, and driving method and electronic device thereof |
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TWI594221B (en) * | 2013-11-12 | 2017-08-01 | 友達光電股份有限公司 | Pixel structure and driving method thereof |
US10157570B2 (en) | 2015-05-15 | 2018-12-18 | Au Optronics Corporation | Pixel circuit and driving method thereof |
CN104966502A (en) * | 2015-05-21 | 2015-10-07 | 友达光电股份有限公司 | Liquid crystal display device with a light guide plate |
CN104966502B (en) * | 2015-05-21 | 2017-09-12 | 友达光电股份有限公司 | Liquid crystal display device with a light guide plate |
TWI623927B (en) * | 2017-07-20 | 2018-05-11 | 友達光電股份有限公司 | Display panel and method for driving pixel thereof |
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