TWI620267B - Non contact wafer table - Google Patents

Non contact wafer table Download PDF

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Publication number
TWI620267B
TWI620267B TW105128806A TW105128806A TWI620267B TW I620267 B TWI620267 B TW I620267B TW 105128806 A TW105128806 A TW 105128806A TW 105128806 A TW105128806 A TW 105128806A TW I620267 B TWI620267 B TW I620267B
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Taiwan
Prior art keywords
wafer
positive pressure
pressure unit
suction holes
contact wafer
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TW105128806A
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Chinese (zh)
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TW201812976A (en
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藍受龍
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昇陽國際半導體股份有限公司
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Publication of TWI620267B publication Critical patent/TWI620267B/en

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Abstract

一種非接觸式晶圓台,其包含有:一台體;多個吸孔,其係設於該台體;一負壓單元,其係耦接該些吸孔;至少一吹孔,其係設於該台體;以及一正壓單元,其係耦接該至少一吹孔。正壓單元係提供一正壓氣體,而使吹孔朝向晶圓的中央區域吹出正壓氣體,該正壓氣體係形成一支撐力。該支撐力係使晶圓的中央區域無法產生下陷狀態。 A non-contact wafer table, comprising: a body; a plurality of suction holes, which are disposed on the table body; a negative pressure unit coupled to the suction holes; at least one blow hole, Provided in the base body; and a positive pressure unit coupled to the at least one blow hole. The positive pressure unit provides a positive pressure gas, and the blow holes blow a positive pressure gas toward a central region of the wafer, and the positive pressure gas system forms a supporting force. This supporting force prevents the central region of the wafer from being depressed.

Description

非接觸式晶圓台 Non-contact wafer station

一種非接觸式晶圓台,尤指一種能使晶圓的中央部分無法產生下陷狀態,並能使晶圓緊密貼合於晶圓台之裝置。 A non-contact wafer fab, especially a device that enables the central portion of the wafer to be in a depressed state and that allows the wafer to fit snugly to the wafer table.

近年隨著電子產品的技術突發猛進,現有的晶圓製程係朝向薄量化的趨勢發展。然現有的晶圓製程中,其係使用晶圓台固定晶圓,而使晶圓能夠轉移至下一製程。 In recent years, with the rapid advancement of electronic products, the existing wafer processing system has been trending towards thinning. However, in the existing wafer process, the wafer is used to fix the wafer, so that the wafer can be transferred to the next process.

現有的晶圓台,其為兩個弧形體或一環型體,於各弧形體或環形體具有多個吸孔,該些吸孔係耦接一負壓裝置。該負壓裝置可為一真空裝置。該些吸孔與該弧形體或環形體係構成一真空吸附區。 The existing wafer table has two arc-shaped bodies or a ring-shaped body, and each of the arc-shaped bodies or the annular body has a plurality of suction holes, and the suction holes are coupled to a negative pressure device. The vacuum device can be a vacuum device. The suction holes form a vacuum adsorption zone with the curved body or the annular system.

一晶圓係放置於晶圓台,負壓裝置係提供一負壓給該些吸孔,而使該些吸孔產生真空吸力,以吸附晶圓。即真空吸附區產生一真空吸力,以吸附晶圓。 A wafer system is placed on the wafer table, and the negative pressure device provides a negative pressure to the suction holes, and the suction holes generate vacuum suction to adsorb the wafer. That is, the vacuum adsorption zone generates a vacuum suction to adsorb the wafer.

雖上述之結構係可以吸附晶圓,但晶圓必具有一預定厚度,然而晶圓係朝向薄晶圓的趨勢發展,所以當薄晶圓放置於晶圓台時,因薄晶圓的結構力略顯不足,故薄晶圓的中央位置會受到重力的影響,而下垂或下陷,進而造成薄晶圓應被該些吸孔所吸附的位置產生有洩漏。 Although the above structure can adsorb the wafer, the wafer must have a predetermined thickness, but the trend of the wafer toward the thin wafer is developed, so when the thin wafer is placed on the wafer table, the structural force of the thin wafer Slightly insufficient, the central position of the thin wafer is affected by gravity, and it sag or sag, which causes the thin wafer to be leaked by the position where the suction holes are attracted.

上述之洩漏,若更進一步說明,因真空吸附區係位於薄晶圓的周緣,真空吸附區的中央無接觸薄晶圓,所以薄晶圓僅其周緣與真空吸附區接觸,而薄晶圓的中央位置無任何支撐,所以薄晶 圓無支撐的位置會產生下陷,進而使薄晶圓與真空吸附區之接觸位置產生有洩漏。若薄晶圓下陷的幅度過大,則會使真空吸附區無法將薄晶圓吸附且固定。 The above leakage, if further explained, because the vacuum adsorption zone is located at the periphery of the thin wafer, the center of the vacuum adsorption zone is not in contact with the thin wafer, so the thin wafer only has its peripheral edge in contact with the vacuum adsorption zone, and the thin wafer is There is no support at the central position, so thin crystal The unsupported position of the circle can cause sag, which in turn causes leakage at the contact position between the thin wafer and the vacuum adsorption zone. If the thickness of the thin wafer is too large, the vacuum adsorption region will not be able to adsorb and fix the thin wafer.

上述之洩漏係使薄晶圓與晶圓台之間無法產生氣密,其係導致晶圓台無法吸附薄晶圓,故如何使晶圓台能夠吸附薄晶圓,並且具有良好的氣密效果,其係成為各廠商可以討論的議題。 The above leakage system makes it impossible to create airtightness between the thin wafer and the wafer table, which causes the wafer table to be unable to adsorb the thin wafer, so how to enable the wafer stage to adsorb the thin wafer and have a good airtight effect. It is an issue that can be discussed by various manufacturers.

有鑑於上述之課題,本發明之目的在於提供一種非接觸式晶圓台,當晶圓放置於台體時,位於台體中央位置的吹孔係提供一正壓氣體給晶圓面對台體的一面,而使晶圓無法產生下陷狀態,進而使晶圓與台體之間緊密接觸,而無法產生洩漏情形。 In view of the above problems, an object of the present invention is to provide a non-contact wafer stage. When a wafer is placed on a stage, a blow hole located at a central position of the stage provides a positive pressure gas to the wafer facing the body. On one side, the wafer cannot be sagged, and the wafer is in close contact with the stage, and no leakage can occur.

為了達到上述之目的,本發明之技術手段在於提供一種非接觸式晶圓台,其包含有:一台體;多個吸孔,其係設於該台體;一負壓單元,其係耦接該些吸孔;至少一吹孔,其係設於該台體;以及一正壓單元,其係耦接該至少一吹孔。 In order to achieve the above object, the technical means of the present invention is to provide a non-contact wafer table, comprising: a body; a plurality of suction holes, which are disposed on the table body; a negative pressure unit, which is coupled Connecting the suction holes; at least one blowing hole is disposed on the table body; and a positive pressure unit coupled to the at least one blowing hole.

於一實施例,該至少一吹孔係位於該台體之中央位置。 In one embodiment, the at least one blowhole is located at a central location of the body.

綜合上述,正壓單元係提供一正壓氣體,而使吹孔朝向晶圓的中央區域吹出正壓氣體,該正壓氣體係形成一支撐力。該支撐力係使晶圓的中央區域無法產生下陷狀態。並藉由該支撐力,而使洩漏狀態無法產生。 In summary, the positive pressure unit provides a positive pressure gas, and the blow holes blow a positive pressure gas toward a central region of the wafer, and the positive pressure gas system forms a supporting force. This supporting force prevents the central region of the wafer from being depressed. With this supporting force, the leakage state cannot be generated.

10‧‧‧台體 10‧‧‧Table

100‧‧‧支撐座 100‧‧‧ support

11‧‧‧吸孔 11‧‧‧ suction hole

12‧‧‧吹孔 12‧‧‧Blow holes

13‧‧‧正壓單元 13‧‧‧ positive pressure unit

14‧‧‧負壓單元 14‧‧‧Negative pressure unit

20‧‧‧晶圓 20‧‧‧ wafer

第1圖為本發明之一種非接觸式晶圓台之示意圖。 Figure 1 is a schematic view of a non-contact wafer stage of the present invention.

以下係藉由特定的具體實施例說明本發明之實施方式,所屬技術領域中具有通常知識者可由本說明書所揭示之內容,輕易地瞭解本發明之其他優點與功效。 The embodiments of the present invention are described below by way of specific embodiments, and those skilled in the art can readily understand the other advantages and advantages of the present invention.

請配合參考第1圖所示,本發明係一種非接觸式晶圓台,其具有一台體10、多個吸孔11、至少一吹孔12、一正壓單元13與一負壓單元14。 Referring to FIG. 1 , the present invention is a non-contact wafer stage having a body 10 , a plurality of suction holes 11 , at least one blowing hole 12 , a positive pressure unit 13 and a negative pressure unit 14 . .

台體10具有一支撐座100,支撐座100為一環型體或多個弧形體。多個吸孔11係位於支撐座100。吸孔11係耦接負壓單元14。負壓單元14為負氣壓產生裝置,如真空機。 The base 10 has a support base 100. The support base 100 is a ring-shaped body or a plurality of curved bodies. A plurality of suction holes 11 are located in the support base 100. The suction hole 11 is coupled to the negative pressure unit 14. The negative pressure unit 14 is a negative air pressure generating device such as a vacuum machine.

吹孔12係設於台體10,並位於支撐座10之間。吹孔12係耦接正壓單元13。正壓單元13為正氣壓產生裝置,如鼓風機。舉例而言,吹孔12係相對於放置於支撐座10的晶圓20之中央位置或者台體10之中央位置。 The blow holes 12 are provided in the table body 10 and are located between the support bases 10. The blow hole 12 is coupled to the positive pressure unit 13. The positive pressure unit 13 is a positive air pressure generating device such as a blower. For example, the blow hole 12 is relative to a central position of the wafer 20 placed on the support base 10 or a central position of the stage body 10.

請再配合參考第1圖所示,一晶圓20係放置於支撐座100,支撐座100與吸孔11係構成一真空吸附區。負壓單元14係提供一負壓給吸孔11,而使吸孔11產生一真空吸力,以吸附晶圓20。晶圓20係為薄晶圓,其厚度為4~8mm。舉例而言,晶圓20的厚度係大於等於或小於等於6mm。 Please refer to FIG. 1 again, a wafer 20 is placed on the support base 100, and the support base 100 and the suction hole 11 form a vacuum adsorption zone. The negative pressure unit 14 provides a negative pressure to the suction hole 11 to cause the suction hole 11 to generate a vacuum suction force to adsorb the wafer 20. The wafer 20 is a thin wafer having a thickness of 4 to 8 mm. For example, the thickness of the wafer 20 is greater than or equal to 6 mm.

負壓單元14提供負壓時,正壓單元13係提供一正壓給吹孔12,吹孔12係朝向晶圓20吹出一氣體。該氣體係對晶圓20的中央區域形成一支撐力,藉此使晶圓20的中央位置無法產生下陷狀態。同時,晶圓20與支撐座100接觸的位置平貼於支撐座100的頂端,即晶圓20平貼於真空吸附區,以固定晶圓20,並使晶圓20與支撐座100的頂端緊密結合,而使洩漏狀態無法產生。 When the negative pressure unit 14 provides a negative pressure, the positive pressure unit 13 provides a positive pressure to the blow hole 12, and the blow hole 12 blows a gas toward the wafer 20. The gas system forms a supporting force on the central region of the wafer 20, whereby the central position of the wafer 20 cannot be depressed. At the same time, the position of the wafer 20 in contact with the support base 100 is flat on the top end of the support base 100, that is, the wafer 20 is flatly attached to the vacuum adsorption area to fix the wafer 20, and the wafer 20 is tightly attached to the top end of the support base 100. Combined, the leak state cannot be produced.

綜合上述,本發明係利用正壓單元13所提供的一正壓氣體,而使吹孔12朝向晶圓20的中央區域吹出正壓氣體,該正壓氣體係形成一支撐力。該支撐力係使晶圓20的中央區域無法產生下陷狀態。故藉由該支撐力,而使真空吸附區能夠吸附晶圓20,並使洩漏狀態無法產生。 In summary, the present invention utilizes a positive pressure gas provided by the positive pressure unit 13 to blow the positive pressure gas toward the central region of the wafer 20, and the positive pressure gas system forms a supporting force. This supporting force prevents the central region of the wafer 20 from being in a depressed state. Therefore, by the supporting force, the vacuum adsorption region can adsorb the wafer 20, and the leak state cannot be generated.

以上所述之具體實施例,僅係用於例釋本發明之特點及功 效,而非用於限定本發明之可實施範疇,於未脫離本發明上揭之精神與技術範疇下,任何運用本發明所揭示內容而完成之等效改變及修飾,均仍應為下述之申請專利範圍所涵蓋。 The specific embodiments described above are only used to illustrate the features and functions of the present invention. The equivalents and modifications of the present invention, which are not intended to limit the scope of the present invention, should be The scope of the patent application is covered.

Claims (5)

一種非接觸式晶圓台,其包含有:一台體;多個吸孔,其係設於該台體;一負壓單元,其係耦接該些吸孔;至少一吹孔,其係設於該台體,該至少一吹孔係位於該台體之中央位置;以及一正壓單元,其係耦接該至少一吹孔。 A non-contact wafer table, comprising: a body; a plurality of suction holes, which are disposed on the table body; a negative pressure unit coupled to the suction holes; at least one blow hole, The at least one blowing hole is located at a central position of the table body; and a positive pressure unit coupled to the at least one blowing hole. 如申請專利範圍第1項所述之非接觸式晶圓台,其中該台體更具有一支撐座,該些吸孔係位於該支撐座。 The non-contact wafer fab as described in claim 1, wherein the table body further has a support seat, and the suction holes are located in the support base. 如申請專利範圍第2項所述之非接觸式晶圓台,其中該支撐座為一環型體或多個弧形體。 The non-contact wafer fab as described in claim 2, wherein the support is a ring body or a plurality of arc bodies. 如申請專利範圍第1項所述之非接觸式晶圓台,其中該負壓單元為一負氣壓產生裝置。 The non-contact wafer stage according to claim 1, wherein the negative pressure unit is a negative air pressure generating device. 如申請專利範圍第1項所述之非接觸式晶圓台,其中該正壓單元為一正氣壓產生裝置。 The non-contact wafer stage according to claim 1, wherein the positive pressure unit is a positive air pressure generating device.
TW105128806A 2016-09-06 2016-09-06 Non contact wafer table TWI620267B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201436036A (en) * 2013-03-13 2014-09-16 Taiwan Semiconductor Mfg Wafers, panels, semiconductor devices, and glass substrate treatment methods
TW201505948A (en) * 2013-05-09 2015-02-16 Oiles Industry Co Ltd Supporting air plate and gas flow resistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201436036A (en) * 2013-03-13 2014-09-16 Taiwan Semiconductor Mfg Wafers, panels, semiconductor devices, and glass substrate treatment methods
TW201505948A (en) * 2013-05-09 2015-02-16 Oiles Industry Co Ltd Supporting air plate and gas flow resistor

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