JP6496919B2 - Bernoulli hand and semiconductor manufacturing equipment - Google Patents

Description

  The present invention relates to a Bernoulli hand used when holding a workpiece such as a semiconductor substrate in a semiconductor manufacturing process or the like, and a semiconductor manufacturing apparatus including the Bernoulli hand.

  In a semiconductor manufacturing process, a substrate transport apparatus is used to take out a substrate before processing from a rack and transport it to a substrate processing apparatus, or to take out a processed substrate from the substrate processing apparatus and store it in a rack. The substrate transport apparatus includes a hand for holding a substrate and a moving mechanism for the hand.

  As one of means for holding and transporting a substrate, a Bernoulli hand (hereinafter simply referred to as “hand”) that holds a substrate using the Bernoulli effect is known. In Patent Document 1, a flat plate-like hand having one or more small-diameter through holes formed in the thickness direction, a hand moving mechanism for moving the hand, and air for supplying air to the through holes as will be described later. A substrate transfer apparatus provided with a feeding means is described.

  The operation of holding the substrate with the hand will be described. First, the hand moving mechanism is operated to position the hand on the substrate, and the hand is lowered to bring the lower surface of the hand close to the upper surface of the substrate. Subsequently, air is supplied from the upper part of the hand to the through hole by the air supply means and is supplied between the hand and the substrate. When air is supplied from the through hole toward the substrate, the space between the hand and the substrate becomes negative due to the Bernoulli effect. Since the back surface (surface not facing the hand) side of the substrate is at atmospheric pressure, the substrate is lifted by the pressure difference. Thereafter, while the air supply is continued, the substrate is held in a state of being slightly separated from the hand. After moving the hand to a predetermined position in this state, the air supply is stopped. Then, the pressure difference is eliminated, the holding of the substrate by the hand is released, and the conveyance of the substrate to a predetermined position is completed.

  When air is supplied for the first time, the substrate is vigorously lifted to the hand side by the pressure difference. For this reason, the substrate may collide with the surface of the hand and the substrate may be damaged or the substrate surface may be damaged. In particular, when the substrate is lifted when the substrate is placed on a flat surface and there is no space on the lower surface of the substrate, the pressure on the back side of the substrate is low, so air must be supplied vigorously from the through hole of the hand. In other words, the momentum when the substrate is lifted increases, and there is a high possibility that the substrate collides with the hand and is damaged or the surface is damaged. In addition, if an element is formed on the upper surface side of the substrate, there is a risk that a circuit may be damaged or particles may adhere to cause a problem.

  Patent Document 2 has a configuration in which an inclined portion that is inclined outwardly from the lower surface of the hand toward the substrate is screwed to the hand body at six points surrounding the center of the substrate and corresponding to the peripheral edge of the substrate. Have been described. In this hand, even if the substrate is lifted vigorously when air is first supplied, the peripheral edge is stopped by the inclined portion. This prevents the upper surface of the substrate from directly colliding with the surface of the hand.

JP 2005-191464 A JP 2004-119784 A

  In the semiconductor manufacturing process, substrates of various sizes are used. In the hand described in Patent Document 2, when holding substrates of different sizes, it is necessary to change the position of the inclined portion that is screwed in accordance with the outer shape of the substrate. Therefore, every time the size of the substrate to be held changes, it is necessary to stop the conveying device and align the inclined portion, which is cumbersome and inefficient.

  The problem to be solved by the present invention is that a work such as a semiconductor substrate having a different size can be held without a troublesome work in a semiconductor manufacturing process or the like, and a semiconductor element or the like on the surface of the work It is to provide a Bernoulli hand capable of adjusting the holding position without damaging the semiconductor device, and a semiconductor manufacturing apparatus equipped with such a Bernoulli hand.

Bernoulli hand according to the present invention made to solve the above problems,
a) a flat body having a holding surface formed to cover the center of the disk-shaped workpiece ;
b) three or more air outlets provided in the holding surface so as to surround the center;
c) A plurality of shapes on the holding surface that are provided at positions corresponding to the periphery of the workpiece at at least three points surrounding the center of the workpiece, and have a shape inclined outward from the holding surface toward the workpiece. An inclined part of
d) an inclined portion moving mechanism for moving at least one of the inclined portions in the radial direction of the workpiece ;
It is characterized by providing.

  The three points surrounding the center of the workpiece are points where the center of the workpiece is located inside a triangle formed by these three points. The inclined portion may be provided at each of such three points, or two inclined portions may be provided so as to correspond to the periphery of the workpiece at such three points. Of course, you may make it provide four or more inclination parts.

In the Bernoulli hand according to the present invention, it is possible to adjust the distance between the plurality of inclined portions by moving the inclined portion in the radial direction of the workpiece using the inclined portion moving mechanism. Therefore, even when holding substrates of different sizes, there is no need to perform troublesome work such as stopping the transfer device and aligning the inclined portion.
Further, as described above, since the substrate is lifted vigorously when air is first supplied, the peripheral edge of the substrate may come into contact with the inclined portion, and the holding position may be shifted. By using this, it is possible to correct the shift of the holding position while holding the substrate.

  The inclined shape may be either a smooth inclined surface or a stepped shape, but the shape of the inclined portion is that the workpiece can be moved smoothly when adjusting the holding position of the workpiece. Is preferably a smooth inclined surface.

  Another aspect of the present invention is a semiconductor manufacturing apparatus including a Bernoulli hand having the above-described characteristics.

  Since the Bernoulli hand according to the present invention includes an inclined portion moving mechanism for moving the inclined portion in the radial direction of the workpiece, it is possible to hold substrates of different sizes without reducing throughput in a troublesome operation. Further, the holding position of the workpiece can be adjusted while the workpiece is held. Further, in the Bernoulli hand according to the present invention, even when the substrate is lifted vigorously when holding the workpiece, the upper surface of the workpiece does not collide with the surface of the hand and the workpiece is not damaged or the surface is not damaged. . Also in the semiconductor manufacturing apparatus according to the present invention, the same effect as described above can be obtained.

The bottom view (FIG. 1 (a)) and AA 'sectional drawing (FIG. 1 (b)) of one Example of the Bernoulli hand concerning this invention. The figure explaining the operation | movement which hold | maintains a board | substrate with the Bernoulli hand of a present Example. The top view which shows schematic structure of the plasma processing apparatus which is one Example of the semiconductor manufacturing apparatus concerning this invention. The side view which shows schematic structure of the plasma processing apparatus of a present Example. The bottom view (FIG. 5 (a)) and BB 'sectional drawing (FIG.5 (b)) of another Example of the Bernoulli hand based on this invention. The bottom view (Drawing 6 (a)) and CC 'sectional view (Drawing 6 (b)) of another example of Bernoulli hand concerning the present invention. The figure which shows a mode that the semiconductor substrate from which a magnitude | size differs by the Bernoulli hand (example of FIG. 6) which concerns on this invention is hold | maintained.

  First, an embodiment of a Bernoulli hand according to the present invention will be described with reference to the drawings. FIG. 1 (a) shows a bottom view of the Bernoulli hand of this embodiment, and FIG. 1 (b) shows a cross-sectional view along AA ′.

  In the Bernoulli hand 1 of the present embodiment, the disk-shaped semiconductor substrate 60 is held from above. The base of the Bernoulli hand 1 is slidably supported on the hand support 2 by a slide mechanism (not shown). Moreover, the hand support part 2 can be moved and rotated by a moving mechanism (not shown). Hereinafter, the slide mechanism and the moving mechanism are collectively referred to as a hand moving mechanism.

  The Bernoulli hand 1 includes a flat plate-like main body 10, a distal end side member 20 formed on the distal end portion of the lower surface (holding surface) of the main body 10, and six air discharge portions 30 formed on the holding surface of the main body 10. I have. A through hole 31 is formed in the center of the air discharge part 30. Further, a base side member 40 is provided at the base portion of the holding surface of the main body 10 via a base side member support portion 50. The base side member support part 50 is movable in the radial direction of the semiconductor substrate 60 by a base side member moving mechanism 51 provided with an air cylinder. In other words, the base side member 40 can be moved in the radial direction of the semiconductor substrate 60 by moving the base side member support portion 50.

  The distal end side member 20 is composed of an inclined portion 21 and a stopper 22 provided adjacent to the outside of the inclined portion 21, and the inclined portion 21 has a shape that is smoothly inclined outward toward the semiconductor substrate 60. ing. Similarly, the base side member 40 includes an inclined portion 41 and a stopper 42. The distal end side member 20 is thicker than the base side member 40 by the thickness of the base side member support 50, and the vertical positions of the inclined portion 21 and the inclined portion 41, and the stopper 22 and the stopper 42 are aligned. It has been.

  With reference to FIG. 2, the operation | movement which hold | maintains the semiconductor substrate 60 with the Bernoulli hand 1 of a present Example is demonstrated. First, the hand moving mechanism is operated to place the Bernoulli hand 1 on the semiconductor substrate 60, and the Bernoulli hand 1 is lowered to bring the holding surface of the Bernoulli hand 1 close to the upper surface of the semiconductor substrate 60. Subsequently, air is supplied from the upper part of the hand to the through hole 31 by an air supply means (not shown) and is sent between the Bernoulli hand 1 and the semiconductor substrate 60. The air blown out from the through hole 31 toward the semiconductor substrate 60 flows as shown by an arrow in FIG. As described above, when air is supplied from the through hole 31 toward the substrate, the space between the Bernoulli hand 1 and the semiconductor substrate 60 becomes negative due to the Bernoulli effect. Since the lower surface side of the semiconductor substrate 60 is at atmospheric pressure, the semiconductor substrate 60 is lifted by the pressure difference.

  Inclined portions 21 and 41 are formed at positions corresponding to a part of the periphery of the semiconductor substrate 60 at the distal end portion and the base portion of the main body 10 of the Bernoulli hand 1 of the present embodiment, respectively. Therefore, even if the semiconductor substrate 60 is lifted vigorously, the peripheral edge is stopped by the inclined portions 21 and 41. Therefore, the upper surface of the semiconductor substrate 60 is prevented from directly colliding with the holding surface of the Bernoulli hand 1, and the semiconductor substrate 60 is not damaged or the surface thereof is not damaged.

However, since the semiconductor substrate 60 is lifted vigorously when air is supplied for the first time, the peripheral edge of the semiconductor substrate 60 may come into contact with the inclined portions 21 and 41 and the holding position may shift (FIG. 2 ( b)). In such a case, the base side member 40 is moved by the base side member moving mechanism 51 to move the inclined portion 41 to the semiconductor substrate 60 side. Thereby, the shift of the holding position of the semiconductor substrate 60 is corrected (FIG. 2C).
Further, in the Bernoulli hand 1 of the present embodiment, the distance between the holding surface of the main body 10 and the upper surface of the semiconductor substrate 60 can be adjusted by adjusting the position of the inclined portion 41. Accordingly, the above-described distance is made optimal for stably holding the semiconductor substrate 60 in consideration of the pressure difference (difference between the negative pressure and the atmospheric pressure caused by the Bernoulli effect), the weight of the semiconductor substrate, and the like. can do.

  In a state where the semiconductor substrate 60 is held by the Bernoulli hand 1, the side slip of the semiconductor substrate 60 is restricted by the inclined portion 21 formed at the distal end portion of the main body 10 and the inclined portion 41 formed at the base portion of the main body. Further, the holding position of the semiconductor substrate 60 can be aligned by the inclined portion 41 of the base side member 40 by moving the base side member 40 in the radial direction of the semiconductor substrate 60. Therefore, it is not necessary to separately provide an alignment stage or the like for positioning the semiconductor substrate 60 as in the prior art.

  Moreover, the distance between the front end side member 20 and the base side member 40 can be changed freely by moving the base side member 40 using the substrate side member moving mechanism 51. Therefore, when holding semiconductor substrates 60 of different sizes, there is no need to perform troublesome operations such as removing the Bernoulli hand 1a from the substrate transfer apparatus and aligning the inclined portions as in the prior art.

Next, an embodiment in which the semiconductor manufacturing apparatus according to the present invention is applied to a plasma processing apparatus will be described.
3 and 4 show the configuration of the plasma processing apparatus 101 of this embodiment. The plasma processing apparatus 101 of this embodiment includes a vacuum reaction chamber 102, a transfer chamber (load lock chamber) 104, and an atmospheric chamber 106, between the vacuum reaction chamber 102 and the transfer chamber 104, and between the transfer chamber 104 and the atmospheric chamber 106. Are provided with gate valves 108 and 110, respectively.

  Inside the vacuum reaction chamber 102, a shower head 112, which is a source gas supply port, a mounting table 116 on which the tray 114 is mounted, and a temperature sensor 118 (first temperature) for detecting the temperature of the tray 114 on the mounting table 116. Detection means) is provided. As the material of the tray 114, for example, alumina or aluminum can be used, but in this embodiment, an aluminum tray 114 having excellent thermal conductivity is used. The mounting table 116 is provided with a heater 120 and an electrostatic chuck (not shown). In the present embodiment, the shower head 112 also serves as the upper electrode, and the mounting table 116 also serves as the lower electrode.

  A plurality of countersunk portions (concave portions) 114 a are provided on the surface of the tray 114. A semiconductor substrate W (hereinafter simply referred to as “substrate”), which is a substrate to be processed, is placed on these countersink portions 114a and is stably conveyed. The size (inner diameter and depth) of the countersink 114a is set to be substantially the same as the outer diameter and thickness of the substrate W, and the substrate W accommodated in the countersink 114a is flush with the surface of the tray 114. Become.

  The transfer chamber 104 is provided with a robot 122 that transfers the tray 114 between the vacuum reaction chamber 102 and the atmospheric chamber 106. The transfer chamber 104 is connected to a decompression means (not shown) for decompressing the interior thereof.

  The atmosphere chamber 106 has a tray stage 130, a substrate case 132 for storing the substrate W, a transfer robot 134 for moving the substrate W between the tray stage 130 and the substrate case 132, and the temperature of the tray 114 on the tray stage 130. Is provided with a temperature sensor 136 (second temperature detecting means). The robot 134 has an arm 134a and a Bernoulli hand 134b as a substrate capturing means attached to the tip of the arm 134a. The Bernoulli hand 134b has the configuration of the above-described embodiment. The robot 134 stores in advance a countersunk portion 114a of the tray 114 on the tray stage 130. The Bernoulli hand 134b sucks and takes out the plasma-treated substrate W from the countersink portion 114a of the tray 114. Store in. Further, the substrate W is chucked out from the substrate case 132 and stored in the countersink 114 a of the tray 114 on the tray stage 130. The tray stage 130 is provided with a heater 138. 3 and 4, the tray 114 and the substrate W are in a state of being placed on the tray stage 130 of the atmospheric chamber 106.

  The heaters 120 and 138 are controlled by the control device 140. A detection signal of the temperature sensor 118 is input to the control device 140, and the heater 120 is controlled based on this signal. The control device 140 is also input with a detection signal of the temperature sensor 136, and the temperature of the tray 114 on the tray stage 130 is changed to a vacuum reaction during plasma processing based on the detection signals of the temperature sensors 118 and 136. The output of the heater 138 is adjusted so as to be substantially the same as the temperature of the tray 114 in the chamber 102.

Subsequently, the operation of the plasma processing apparatus 101 of the present embodiment will be described.
First, an unprocessed substrate W is taken out from the substrate case 132 by the robot 134 and placed on the countersink 114 a of the tray 114 on the tray stage 130. At this time, the tray 114 is heated to a predetermined temperature by the heater 138 in the tray stage 130.

  After the substrate W is placed on the countersunk portion 114 a of the tray 114, the gate valve 110 is opened, and the tray 114 on the tray stage 130 is transferred into the transfer chamber 104 by the robot 122 in the transfer chamber 104. Thereafter, the gate valve 110 is closed, and the inside of the transfer chamber 104 is reduced to a predetermined pressure. Subsequently, the gate valve 108 is opened, and the tray 114 is transferred into the vacuum reaction chamber 102 by the robot 122 and placed on the mounting table 116. The tray 114 placed on the placing table 116 is attracted by the electrostatic chuck and heated by the heater 120.

  When the temperature of the tray 114 of the mounting table 116 reaches a predetermined temperature, tetraethoxysilane (TEOS) and oxygen, which are film forming raw material gases, are introduced from the shower head 112 into the vacuum reaction chamber 102. Then, when a high frequency power source is applied between the lower electrode (mounting table 116) and the upper electrode (shower head 112) and the source gas is turned into plasma, an oxide film is formed on the surface of the substrate W. The detection signal of the temperature sensor 118 during the plasma processing is input to the control device 140 and stored.

  When the plasma processing is completed, the gate valve 108 is opened, and the tray 114 on the mounting table 116 is transferred into the transfer chamber 104 where the pressure is reduced to a predetermined pressure by the robot 122. Subsequently, the gate valve 108 is closed, the inside of the transfer chamber 104 is returned to atmospheric pressure, the gate valve 110 is opened, and the tray 114 is transferred onto the tray stage 130 by the robot 122.

  When the tray 114 is transferred onto the tray stage 130, the control device 140 determines that the temperature of the tray 114 is in the plasma processing based on the detection signal of the temperature sensor 136 and the detection signal of the temperature sensor 118 during the plasma processing. The output of the heater 138 is adjusted so as to be substantially the same as the temperature of. Thereby, the tray 114 of the tray stage 130 is maintained at the temperature of the tray 114 during the plasma processing.

  In this state, the plasma-treated substrate W is adsorbed by the Bernoulli hand 134 b of the robot 134 in the atmosphere chamber 106 and stored in the substrate case 132 from the tray 114 on the tray stage 130. When the substrates W are attracted from all the countersink portions 114a of the tray 114 and stored in the substrate case 132, the unprocessed substrates W in the substrate case 132 are subsequently attracted by the Bernoulli hand 34b of the robot 134, and the tray It is placed on the tray 114 on the stage 130.

  While such a substrate W replacement operation is being performed, the temperature of the tray 114 on the tray stage 130 is maintained at the temperature during the plasma processing, and the position of the substrate W on the tray 114 due to the thermal expansion of the tray 114. The position of the countersink 114a does not change. Therefore, the robot 34 can accurately suck the predetermined position of the substrate W on the tray 114. Further, the substrate W can be accurately placed on the countersunk portion 114a of the tray 114.

  Furthermore, in the plasma processing apparatus 101 of the present embodiment, the temperature of the tray 114 is maintained substantially the same as the temperature during the plasma processing, so that after the unprocessed substrate W is mounted, the mounting in the vacuum reaction chamber 102 is performed. It is not necessary to adjust the temperature of the tray 114 mounted on the mounting table 116 with the heater 120 for plasma processing, thereby improving the throughput. Further, the deterioration of the tray 114 due to frequent changes in the temperature of the tray 114 does not occur.

  In this embodiment, an example in which the temperature of the tray 114 is increased by plasma processing has been described. However, when the temperature of the tray 114 is decreased by plasma processing, a refrigerant circulation path is provided inside the tray stage 130 to provide a tray stage. The tray 114 on 130 may be cooled. Thereby, the tray 114 on the tray stage 130 can be maintained at the temperature during the plasma processing.

  In the plasma processing apparatus 101 of this embodiment, the substrate W is not shrunk or expanded during the operation of taking out the substrate W from the tray 114 on the tray stage 130 or placing the substrate W on the tray 114. That's fine. Therefore, it is not essential that the temperature of the tray 114 placed on the tray stage 130 is the same as the temperature of the tray 114 during plasma processing, and the temperature of the tray 114 on the tray stage 130 is maintained within a predetermined temperature range. It only has to be done. However, if the temperature of the tray 114 on the tray stage 130 is maintained near room temperature, the temperature difference from the tray 114 during the plasma processing increases, so that expansion and contraction due to large temperature changes frequently occur, and the tray 114 Tends to deteriorate. Also, the throughput is reduced. Therefore, considering these circumstances, it is effective to maintain the temperature of the tray 114 during plasma processing.

  The Bernoulli hand according to the present invention can take various forms. Hereinafter, another embodiment of the Bernoulli hand according to the present invention will be described with reference to FIGS. 5 and 6. In the following description, the description regarding the holding operation and the like of the semiconductor substrate described in the above embodiments is omitted, and only the characteristic configuration of the Bernoulli hands 1a and 1b in each embodiment will be described.

  FIG. 5 shows a configuration of a Bernoulli hand 1a which is another embodiment of the Bernoulli hand according to the present invention. FIG. 5A is a bottom view, and FIG. 5B is a BB ′ cross-sectional view. The main body 10a of the Bernoulli hand 1a has a Y-shape. The main body 10a branches in three directions from the center, and the air discharge portions 30a and the through holes 31a are formed at a total of six locations, two on the holding surface in each direction. As in the above embodiment, the base side member 40a is provided on the main body 10a via the base side member support portion 50a, and the base side member support portion 50a is semiconductor by the base side member moving mechanism 51a provided with an air cylinder. The substrate 60 can move in the radial direction. In the Bernoulli hand 1a of this embodiment, the effects described in the above embodiments can be obtained by moving the base side member 40a in the radial direction of the semiconductor substrate 60, as in the above embodiments. Since the Bernoulli hand 1a according to the present embodiment is not provided with a stopper, the distal end side member 20a and the base side member 40a correspond to the inclined portions of the present invention.

  FIG. 6 shows a configuration of a Bernoulli hand 1b which is still another embodiment of the Bernoulli hand according to the present invention. 6A is a bottom view, and FIG. 6B is a BB ′ cross-sectional view. In the Bernoulli hands 1 and 1a described above, the inclined portion is configured to correspond to the peripheral edge of the semiconductor substrate 60 by an arc. However, since the curvature of the outer periphery changes when the size of the semiconductor substrate 60 to be held changes, it becomes difficult to cope with the arc. The Bernoulli hand 1b of this embodiment can be used particularly suitably when holding the semiconductor substrates 60 of various sizes. Hereinafter, the configuration of the Bernoulli hand 1b will be described.

  The Bernoulli hand 1b of the present embodiment is also composed of a main body 10b, a main body 10b in which air discharge portions 30a and through holes 31a are formed at six locations on the holding surface, an inclined portion 21b and a stopper 22b. A distal end side member 20b having a letter shape and a base side member 40b having a rectangular shape as viewed from above are provided with an inclined portion 41b and a stopper 42b. The base side member 40b is provided in the main body 10b via the base side member support 50b, and the base side member support 50b can be moved in the radial direction of the semiconductor substrate 60 by the base side member moving mechanism 51b. ing.

  FIG. 7 shows a state in which the semiconductor substrate 60 having a different size is held by the Bernoulli hand 1b. In FIG. 7, only the distal end side member 20b and the base side member 40b of the Bernoulli hand 1b are illustrated for easy understanding. FIG. 7A shows a case where a large substrate is held, and FIG. 7B shows a state where a small substrate is held. As described above, when the Bernoulli hand 1b is used, even if the size of the semiconductor substrate 60 is greatly different, one point is set on each of the two sides of the base-side member 40b having a V shape, and one is set on the tip-side member 20b. A total of three points, that is, three points surrounding the center of the semiconductor substrate 60, can correspond to the peripheral portion of the semiconductor substrate 60.

Each of the above-described embodiments is an example, and can be appropriately changed in accordance with the gist of the present invention. For example, not the base side member (inclined part provided on the base side) but the tip side member (inclined part provided on the front end side) may be moved in the radial direction of the semiconductor substrate. Or you may make it move both a base side member and a front end side member. Further, the mechanism for moving these is not limited to the air cylinder, and for example, a drive source for a stepping motor or a servo motor may be provided. Furthermore, the inclined portion and the stopper may be separate members, and only the inclined portion may be configured to be movable in the radial direction of the semiconductor substrate.
Moreover, in the said Example, although the inclined part shall have a linear inclined cross section, it may be a thing with an arc-shaped cross section, or a step shape.
In addition, the shape and the number of the air discharge units 30 are not limited to the configurations described in the above embodiments.
In the above embodiment, the case where the workpiece is held from above by the holding surface of the hand has been described as an example, but the workpiece may be held from below or from the side. Moreover, although the workpiece | work was made into the semiconductor substrate, the kind of workpiece | work is not limited to this.

DESCRIPTION OF SYMBOLS 1, 1a, 1b ... Bernoulli hand 2, 2a, 2b ... Hand support part 10, 10a, 10b ... Hand main body 20, 20a, 20b ... Tip side member 21, 21b ... Inclined part 22, 22b ... Stopper 30, 30a, 30b ... Air discharge part 31, 31a, 31b ... Through hole 40, 40a, 40b ... Base side member 60 ... Semiconductor substrate 101 ... Plasma processing apparatus (semiconductor manufacturing apparatus)
DESCRIPTION OF SYMBOLS 102 ... Vacuum reaction chamber 104 ... Transfer chamber 106 ... Air | atmosphere chamber 108 ... Gate valve 110 ... Gate valve 112 ... Shower head 114 ... Tray 114a ... Countersink part 116 ... Mounting stand 118 ... Temperature sensor (1st temperature detection means)
120, 138 ... heater 122 ... robot (tray transport mechanism)
130 ... Tray stage 132 ... Substrate case 134 ... Robot (substrate transfer mechanism)
134a ... arm 134b ... Bernoulli hand 136 ... temperature sensor (second temperature detecting means)
140 ... Control device W ... Semiconductor substrate (substrate to be processed)

Claims (3)

a) a flat body having a holding surface formed to cover the center of the disk-shaped workpiece;
b) a base Runui suction part provided in front Symbol holding surface,
c) From the holding surface provided on the holding surface at a position where the workpiece abuts the periphery at at least three points of the periphery when the workpiece is adsorbed from above by the Bernoulli adsorption portion. A plurality of inclined portions having a shape inclined outward toward the workpiece, wherein at least one is a fixed inclined portion fixed to the holding surface ;
by d) the Bernoulli suction unit while adsorbing the workpiece, the one of the plurality of inclined portions, at least one inclined portion other than the fixed ramp portion, a direction away direction or close to the fixed ramp portion A Bernoulli hand characterized by comprising:   The Bernoulli hand according to claim 1, wherein the inclined portion has a shape that is smoothly inclined. Bernoulli hand according to claim 1 or 2,
e) A semiconductor manufacturing apparatus comprising: a hand moving mechanism that holds the workpiece so as to cover the center of the workpiece from above with the holding surface of the Bernoulli hand facing downward.

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