TWI620206B - Substrate particles, conductive particles, conductive materials, and connection structures - Google Patents
Substrate particles, conductive particles, conductive materials, and connection structures Download PDFInfo
- Publication number
- TWI620206B TWI620206B TW102148525A TW102148525A TWI620206B TW I620206 B TWI620206 B TW I620206B TW 102148525 A TW102148525 A TW 102148525A TW 102148525 A TW102148525 A TW 102148525A TW I620206 B TWI620206 B TW I620206B
- Authority
- TW
- Taiwan
- Prior art keywords
- particles
- conductive
- substrate
- core
- shell
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/12—Powdering or granulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2333/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
- C08J2333/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
- C08J2333/06—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C08J2333/08—Homopolymers or copolymers of acrylic acid esters
Landscapes
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Inorganic Chemistry (AREA)
Abstract
本發明提供一種於使用在表面上形成有導電層之導電性粒子將電極間電性連接之情形時,可使連接電阻降低、且可抑制電極中之裂痕之產生的基材粒子。 The present invention provides a substrate particle which can reduce the connection resistance and suppress the occurrence of cracks in the electrode when the electrodes are electrically connected by using conductive particles having a conductive layer formed on the surface thereof.
本發明之基材粒子11係用以於表面上形成導電層2而獲得具有導電層2之導電性粒子1。基材粒子11係具備核12、與配置於核12之表面上之殼13之核殼粒子。基材粒子11之壓縮恢復率為50%以上。將基材粒子11壓縮10%時之壓縮彈性模數為3000N/mm2以上且未達6000N/mm2。將基材粒子1壓縮30%時之荷重值相對於壓縮10%時之荷重值之比為3以下。 The substrate particles 11 of the present invention are used to form the conductive layer 2 on the surface to obtain the conductive particles 1 having the conductive layer 2. The substrate particles 11 include cores 12 and core-shell particles of the shell 13 disposed on the surface of the core 12 . The compression recovery ratio of the substrate particles 11 is 50% or more. When the substrate particles 11 were compressed by 10%, the compression elastic modulus was 3000 N/mm 2 or more and less than 6000 N/mm 2 . The ratio of the load value when the substrate particles 1 were compressed by 30% to the load value at the time of compression of 10% was 3 or less.
Description
本發明係關於一種用以於表面上形成導電層而獲得具有該導電層之導電性粒子之基材粒子。又,本發明係關於一種使用上述基材粒子之導電性粒子、導電材料及連接構造體。 The present invention relates to a substrate particle for forming a conductive layer on a surface to obtain conductive particles having the conductive layer. Further, the present invention relates to a conductive particle, a conductive material, and a bonded structure using the above substrate particles.
各向異性導電膏及各向異性導電膜等各向異性導電材料已廣為人知。於上述各向異性導電材料中,於黏合劑樹脂中分散有導電性粒子。 Anisotropic conductive materials such as an anisotropic conductive paste and an anisotropic conductive film are widely known. In the anisotropic conductive material described above, conductive particles are dispersed in the binder resin.
上述各向異性導電材料係用以將軟性印刷基板(FPC)、玻璃基板、玻璃環氧基板及半導體晶片等各種連接對象構件之電極間電性連接而獲得連接構造體。又,有時可使用具有基材粒子、與配置於該基材粒子之表面上之導電層之導電性粒子作為上述導電性粒子。 The anisotropic conductive material is used to electrically connect electrodes of various connection target members such as a flexible printed circuit board (FPC), a glass substrate, a glass epoxy substrate, and a semiconductor wafer to obtain a connection structure. Further, as the conductive particles, conductive particles having a substrate particle and a conductive layer disposed on the surface of the substrate particle may be used.
作為上述導電性粒子所使用之基材粒子之一例,於下述專利文獻1中揭示有殼為無機化合物(A),核為有機聚合物(b),且核由殼被覆之有機聚合物粒子(B)(基材粒子)。又,於專利文獻1中亦揭示有有機聚合物粒子(B)由導電性金屬(C)被覆之導電性粒子。 An example of the substrate particles used for the conductive particles is disclosed in Patent Document 1 below, in which the shell is an inorganic compound (A), the core is an organic polymer (b), and the core is coated with an organic polymer particle. (B) (substrate particles). Further, Patent Document 1 also discloses conductive particles in which the organic polymer particles (B) are coated with a conductive metal (C).
又,於下述專利文獻2中,揭示有藉由使具有聚合性不飽和基之多官能性矽烷化合物於界面活性劑之存在下進行水解及聚縮合而獲得之有機質無機質複合體粒子(基材粒子)。於專利文獻2中,上述多官能性矽烷化合物為選自下述式(X)所表示之化合物及其衍生物之含有至少1個自由基聚合性基之第1矽化合物。 Further, in the following Patent Document 2, an organic inorganic composite particle (substrate obtained by subjecting a polyfunctional decane compound having a polymerizable unsaturated group to hydrolysis and polycondensation in the presence of a surfactant is disclosed. particle). In the patent document 2, the polyfunctional decane compound is a first fluorene compound containing at least one radical polymerizable group selected from the compounds represented by the following formula (X) and derivatives thereof.
上述式(X)中,R1表示氫原子或甲基,R2表示可具有取代基之碳數1~20之2價之有機基,R3表示碳數1~5之烷基或苯基,R4表示選自由氫原子、碳數1~5之烷基、及碳數2~5之醯基所組成之群中之至少一個1價基。 In the above formula (X), R1 represents a hydrogen atom or a methyl group, R2 represents a divalent organic group having 1 to 20 carbon atoms which may have a substituent, R3 represents an alkyl group having 1 to 5 carbon atoms or a phenyl group, and R4 represents At least one monovalent group of a group consisting of a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, and a fluorenyl group having 2 to 5 carbon atoms is selected.
又,於下述之專利文獻3中,揭示有以軟質之高分子聚合物層被覆硬質粒子之表面之核殼粒子。作為上述硬質粒子之較佳例,可列舉:鎳等金屬粒子;玻璃纖維、氧化鋁、二氧化矽等無機物粒子;硬化苯胍等樹脂硬化物粒子。於專利文獻3中,記載有藉由設置軟質之高分子聚合物層,而可使接觸面積增大,提高可靠性之情況。 Further, Patent Document 3 listed below discloses a core-shell particle coated with a soft polymer layer on the surface of a hard particle. Preferred examples of the hard particles include metal particles such as nickel; inorganic particles such as glass fibers, alumina, and ceria; and hardened benzoquinone. Resin hardened particles. Patent Document 3 describes that a soft polymer layer is provided to increase the contact area and improve reliability.
[專利文獻1]日本專利特開2006-156068號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-156068
[專利文獻2]日本專利特開2000-204119號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2000-204119
[專利文獻3]日本專利特開平7-140481號公報 [Patent Document 3] Japanese Patent Laid-Open No. 7-140481
近年來,有由導電性粒子連接之電極之間隔較窄,且電極面積變小之傾向,而要求可以更低電阻連接之導電性粒子。又,關於基板材料,為了提高柔軟性,除玻璃基板以外,使用有相對柔軟之樹脂膜基板,而要求有不對柔軟之基板及電極造成損傷之導電性粒子。 In recent years, there has been a tendency that the interval between the electrodes connected by the conductive particles is narrow and the electrode area is small, and conductive particles which can be connected with lower resistance are required. Further, in order to improve the flexibility of the substrate material, a relatively soft resin film substrate is used in addition to the glass substrate, and conductive particles which do not damage the soft substrate and the electrode are required.
若使用柔軟之基材粒子之表面經導電層被覆之導電性粒子,則 電極與導電性粒子之接觸面積變大,而導電性粒子變得難以損傷電極。然而,若單純使用柔軟之基材粒子,則有如下問題,即於連接電極間時,無法充分去除電極與導電性粒子之間之黏合劑樹脂,從而樹脂被夾於電極與導電性粒子之間,或者無法充分貫通導電層及電極之表面之氧化膜,結果連接電阻變高。該問題於使用核由殼被覆,且殼為相對柔軟之有機殼之核殼粒子作為基材粒子的情形時亦產生。 If conductive particles coated with a conductive layer on the surface of the soft substrate particles are used, The contact area between the electrode and the conductive particles is increased, and the conductive particles are less likely to damage the electrode. However, when the soft base material particles are simply used, there is a problem that the adhesive resin between the electrode and the conductive particles cannot be sufficiently removed when the electrodes are connected, and the resin is sandwiched between the electrode and the conductive particles. Or the oxide film on the surface of the conductive layer and the electrode cannot be sufficiently penetrated, and as a result, the connection resistance becomes high. This problem also occurs when a core-shell particle in which a core is covered by a shell and a shell is a relatively soft organic shell is used as a substrate particle.
另一方面,於使用二氧化矽等相對較硬之基材粒子之表面經導電層被覆之導電性粒子的情形時,黏合劑樹脂之去除性、或導電層及電極之表面之氧化膜之貫通性變良好。然而,導電性粒子未充分變形,因此有如下問題,即電極與導電性粒子之接觸面積未充分變大,而連接電阻未充分變低。又,有根據連接電極間時之壓接條件,導電性粒子損傷電極,而於電極產生裂痕之情況。 On the other hand, in the case of using conductive particles coated with a conductive layer on the surface of relatively hard substrate particles such as cerium oxide, the removal property of the binder resin or the oxide film of the surface of the conductive layer and the electrode is penetrated. Sex has changed. However, since the conductive particles are not sufficiently deformed, there is a problem in that the contact area between the electrode and the conductive particles is not sufficiently increased, and the connection resistance is not sufficiently lowered. Further, depending on the pressure bonding conditions at the time of connecting the electrodes, the conductive particles may damage the electrodes and may cause cracks in the electrodes.
又,壓縮後之復原性(恢復率)缺乏之導電性粒子對連接可靠性造成不良影響。若將使用壓縮後之復原性缺乏之導電性粒子而將電極間連接之連接構造體於高溫條件及高濕條件下進行保管,則有連接不良容易產生之問題。 Further, the conductive particles lacking in recovery (recovery rate) after compression adversely affect the connection reliability. When the connection structure in which the electrodes are connected between the electrodes is stored under high-temperature conditions and high-humidity conditions by using the conductive particles having reduced resilience after compression, there is a problem that connection failure is likely to occur.
本發明之目的在於提供一種於使用於表面上形成有導電層之導電性粒子而將電極間電性連接的情形時,可降低連接電阻,且可抑制電極中之裂痕之產生之基材粒子。又,本發明之目的在於提供一種使用上述基材粒子之導電性粒子、導電材料及連接構造體。 An object of the present invention is to provide a substrate particle which can reduce the connection resistance and suppress the occurrence of cracks in the electrode when the electrodes are electrically connected to each other by using conductive particles having a conductive layer formed on the surface thereof. Moreover, an object of the present invention is to provide a conductive particle, a conductive material, and a bonded structure using the above substrate particles.
根據本發明之較廣態樣,提供一種基材粒子,其係用以於表面上形成導電層而獲得具有上述導電層之導電性粒子者,且該基材粒子係具備核、與配置於上述核之表面上之殼之核殼粒子,且壓縮恢復率為50%以上,壓縮10%壓縮時之壓縮彈性模數為3000N/mm2以上且未達6000N/mm2,壓縮30%時之荷重值相對於壓縮10%時之荷重值之比 為3以下。 According to a broader aspect of the present invention, there is provided a substrate particle for forming a conductive layer on a surface thereof to obtain conductive particles having the conductive layer, wherein the substrate particle has a core and is disposed on the substrate The core shell particle of the shell on the surface of the core, and the compression recovery rate is 50% or more, and the compression elastic modulus when compressing 10% compression is 3000 N/mm 2 or more and less than 6000 N/mm 2 , and the load is 30% when compressed. The ratio of the value to the load value at 10% compression is 3 or less.
於本發明之基材粒子之一特定態樣中,上述核為有機核,上述殼為無機殼。 In a specific aspect of the substrate particles of the present invention, the core is an organic core, and the shell is an inorganic shell.
於本發明之基材粒子之一特定態樣中,上述殼之厚度為100nm以上且5μm以下。 In a specific aspect of the substrate particles of the present invention, the thickness of the shell is 100 nm or more and 5 μm or less.
將上述基材粒子壓縮30%時之壓縮彈性模數較佳為3000N/mm2以下。將上述基材粒子壓縮40%時之荷重值相對於將上述基材粒子壓縮10%時之荷重值的比較佳為6以下。上述基材粒子之破裂應變較佳為10%以上且30%以下。 The compression elastic modulus when the substrate particles are compressed by 30% is preferably 3,000 N/mm 2 or less. The load value when the substrate particles are compressed by 40% is preferably 6 or less with respect to the load value when the substrate particles are compressed by 10%. The fracture strain of the substrate particles is preferably 10% or more and 30% or less.
根據本發明之較廣態樣,提供一種導電性粒子,其具備上述之基材粒子、與配置於上述基材粒子之表面上之導電層。 According to a broader aspect of the present invention, there is provided a conductive particle comprising the above-described substrate particles and a conductive layer disposed on a surface of the substrate particle.
於本發明之導電性粒子之一特定態樣中,該導電性粒子進而具備配置於上述導電層之外表面上之絕緣性物質。 In one specific aspect of the conductive particles of the present invention, the conductive particles further include an insulating material disposed on the outer surface of the conductive layer.
於本發明之導電性粒子之一特定態樣中,該導電性粒子係於上述導電層之外表面具有突起。 In a specific aspect of the conductive particles of the present invention, the conductive particles have protrusions on the outer surface of the conductive layer.
根據本發明之較廣態樣,提供一種導電材料,其含有導電性粒子、與黏合劑樹脂,且上述導電性粒子具備上述之基材粒子、與配置於上述基材粒子之表面上之導電層。 According to a broader aspect of the present invention, there is provided a conductive material comprising conductive particles and a binder resin, wherein the conductive particles comprise the substrate particles and a conductive layer disposed on a surface of the substrate particles .
根據本發明之較廣態樣,提供一種連接構造體。其具備:於表面具有第1電極之第1連接對象構件、於表面具有第2電極之第2連接對象構件、及將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且上述連接部由導電性粒子形成,或者由含有上述導電性粒子與黏合劑樹脂之導電材料形成,上述導電性粒子具備上述之基材粒子、與配置於上述基材粒子之表面上之導電層,且上述第1電極與上述第2電極由上述導電性粒子電性連接。 According to a broader aspect of the invention, a connection structure is provided. The first connection target member having the first electrode on the surface, the second connection target member having the second electrode on the surface, and the connection portion connecting the first connection target member and the second connection target member, and The connection portion is formed of conductive particles or a conductive material containing the conductive particles and a binder resin, and the conductive particles include the substrate particles and a conductive layer disposed on a surface of the substrate particles. Further, the first electrode and the second electrode are electrically connected to each other by the conductive particles.
本發明之基材粒子係具備核、與配置於該核之表面上之殼的核殼粒子,進而就本發明之基材粒子而言,其壓縮恢復率為50%以上,壓縮10%時之壓縮彈性模數為3000N/mm2以上且未達6000N/mm2,壓縮30%時之荷重值相對於壓縮10%時之荷重值之比為3以下,因此於使用於表面上形成有導電層之導電性粒子而將電極間電性連接之情形時,可使連接電阻降低,且可抑制電極中之裂痕之產生。 The substrate particle of the present invention has a core and a core-shell particle disposed on a surface of the core, and the substrate particle of the present invention has a compression recovery ratio of 50% or more and a compression of 10%. The compression elastic modulus is 3000 N/mm 2 or more and less than 6000 N/mm 2 , and the ratio of the load value when compressing 30% to the load value when compressing 10% is 3 or less, so that a conductive layer is formed on the surface. When the conductive particles are electrically connected between the electrodes, the connection resistance can be lowered, and the occurrence of cracks in the electrode can be suppressed.
1‧‧‧導電性粒子 1‧‧‧Electrical particles
2‧‧‧導電層 2‧‧‧ Conductive layer
11‧‧‧基材粒子 11‧‧‧Substrate particles
12‧‧‧核 12‧‧‧nuclear
13‧‧‧殼 13‧‧‧ shell
21‧‧‧導電性粒子 21‧‧‧Electrical particles
22‧‧‧導電層 22‧‧‧ Conductive layer
22A‧‧‧第1導電層 22A‧‧‧1st conductive layer
22B‧‧‧第2導電層 22B‧‧‧2nd conductive layer
31‧‧‧導電性粒子 31‧‧‧Electrical particles
31a‧‧‧突起 31a‧‧‧ Protrusion
32‧‧‧導電層 32‧‧‧ Conductive layer
32a‧‧‧突起 32a‧‧‧ Protrusion
33‧‧‧芯物質 33‧‧‧ core material
34‧‧‧絕緣性物質 34‧‧‧Insulating substances
51‧‧‧連接構造體 51‧‧‧Connection structure
52‧‧‧第1連接對象構件 52‧‧‧1st connection object component
52a‧‧‧第1電極 52a‧‧‧1st electrode
53‧‧‧第2連接對象構件 53‧‧‧2nd connection object component
53a‧‧‧第2電極 53a‧‧‧2nd electrode
54‧‧‧連接部 54‧‧‧Connecting Department
圖1係表示本發明之第1實施形態之導電性粒子的剖面圖。 Fig. 1 is a cross-sectional view showing conductive particles according to a first embodiment of the present invention.
圖2係表示本發明之第2實施形態之導電性粒子的剖面圖。 Fig. 2 is a cross-sectional view showing conductive particles according to a second embodiment of the present invention.
圖3係表示本發明之第3實施形態之導電性粒子的剖面圖。 Fig. 3 is a cross-sectional view showing conductive particles according to a third embodiment of the present invention.
圖4係模式性地表示使用本發明之第1實施形態之導電性粒子之連接構造體的前視剖面圖。 Fig. 4 is a front cross-sectional view schematically showing a connection structure using conductive particles according to the first embodiment of the present invention.
於以下,對本發明之詳細內容進行說明。 The details of the present invention are described below.
本發明之基材粒子係用以於表面上形成導電層而獲得具有該導電層之導電性粒子。即,本發明之基材粒子係導電性粒子用基材粒子。本發明之基材粒子具備核與配置於該核之表面上之殼。本發明之基材粒子係核殼粒子。 The substrate particles of the present invention are used to form a conductive layer on a surface to obtain conductive particles having the conductive layer. In other words, the substrate particles of the present invention are substrate particles for conductive particles. The substrate particle of the present invention has a core and a shell disposed on the surface of the core. The substrate particles of the present invention are core-shell particles.
本發明之基材粒子之壓縮恢復率為50%以上。將本發明之基材粒子壓縮10%時之壓縮彈性模數(10%K值)為3000N/mm2以上且未達6000N/mm2。將本發明之基材粒子壓縮30%時之荷重值(30%荷重值)相對於壓縮10%時之荷重值(10%荷重值)之比(30%荷重值/10%荷重值)為3以下。 The compression recovery ratio of the substrate particles of the present invention is 50% or more. The compression elastic modulus (10% K value) when the substrate particles of the present invention were compressed by 10% was 3000 N/mm 2 or more and less than 6000 N/mm 2 . The ratio of the load value (30% load value) when the substrate particles of the present invention is compressed by 30% to the load value (10% load value) at 10% compression (30% load value / 10% load value) is 3 the following.
本發明之基材粒子之壓縮恢復率較高,且上述基材粒子於壓縮初期具有適當之硬度。進而,就本發明之基材粒子而言,於經一定程 度壓縮之階段,其硬度產生變化,而顯現更柔軟之性質。因此,於與初期之變形時點(10%壓縮變形時點)下之荷重值沒有多少差別之荷重值下,產生中期(30%壓縮變形時點)之變形。其結果,於使用在基材粒子之表面上形成有導電層之導電性粒子將電極間電性連接之情形時,可藉由在初期顯現之硬度而將黏合劑樹脂充分去除,並使導電層或電極之表面之氧化膜充分貫通,且可藉由中期之柔軟性而使電極與導電性粒子之接觸面積充分變大。因此,可降低電極間之連接電阻,且可提高電極間之連接可靠性。例如,即便將電極間由導電性粒子電性連接之連接構造體長時間放置於高溫條件及高濕條件下,亦連接電阻難以變高,難以產生連接不良。又,藉由中期之柔軟性,亦可抑制由導電性粒子引起之電極及基板之損傷。因此,藉由使用本發明之基材粒子,可抑制由電極中之裂痕之產生引起之連接不良。 The substrate particles of the present invention have a high compression recovery ratio, and the substrate particles have an appropriate hardness at the initial stage of compression. Further, in the case of the substrate particles of the present invention, At the stage of degree of compression, the hardness changes, and the softer properties appear. Therefore, in the load value which is not much different from the load value at the initial deformation time point (10% compression deformation point), the deformation in the middle stage (30% compression deformation point) occurs. As a result, when the electrodes are electrically connected by using the conductive particles in which the conductive layer is formed on the surface of the substrate particles, the binder resin can be sufficiently removed by the hardness which is initially formed, and the conductive layer can be made. Or the oxide film on the surface of the electrode is sufficiently penetrated, and the contact area between the electrode and the conductive particles can be sufficiently increased by the flexibility in the middle stage. Therefore, the connection resistance between the electrodes can be lowered, and the connection reliability between the electrodes can be improved. For example, even when the connection structure in which the conductive particles are electrically connected between the electrodes is placed under high temperature conditions and high humidity conditions for a long period of time, the connection resistance is hard to increase, and connection failure is less likely to occur. Further, damage to the electrode and the substrate caused by the conductive particles can be suppressed by the flexibility in the middle stage. Therefore, by using the substrate particles of the present invention, connection failure caused by the occurrence of cracks in the electrode can be suppressed.
上述基材粒子之壓縮恢復率為50%以上。上述壓縮恢復率較佳為52%以上。若上述壓縮恢復率為上述下限以上,則對應電極間之間隔變動而導電性粒子充分追隨而容易變形。因此,難以產生電極間之連接不良。 The compression recovery ratio of the substrate particles is 50% or more. The above compression recovery ratio is preferably 52% or more. When the compression recovery ratio is equal to or higher than the lower limit, the interval between the electrodes fluctuates and the conductive particles sufficiently follow and are easily deformed. Therefore, it is difficult to cause connection failure between the electrodes.
上述壓縮恢復率可以下述方式進行測定。 The above compression recovery rate can be measured in the following manner.
於試樣台上散佈基材粒子。針對1個所散佈之基材粒子,使用微小壓縮試驗機向基材粒子之中心方向施加負荷(反轉荷重值)直至基材粒子發生30%壓縮變形。其後,進行釋壓直至原點用荷重值(0.40mN)。可測定上述期間之荷重-壓縮位移,並自下述式求出壓縮恢復率。再者,負荷速度係設為0.33mN/sec。例如可使用Fischer公司製造之「Fischerscope H-100」等作為上述微小壓縮試驗機。 The substrate particles are dispersed on the sample stage. A load (inversion load value) was applied to the center of the substrate particles using a micro compression tester for one of the dispersed substrate particles until the substrate particles were subjected to 30% compression deformation. Thereafter, the pressure was released until the origin load value (0.40 mN). The load-compression displacement in the above period can be measured, and the compression recovery ratio can be obtained from the following equation. Furthermore, the load speed was set to 0.33 mN/sec. For example, "Fischerscope H-100" manufactured by Fischer Co., Ltd. or the like can be used as the above-described micro compression tester.
壓縮恢復率(%)=[(L1-L2)/L1]×100 Compression recovery rate (%) = [(L1-L2) / L1] × 100
L1:自施加負荷時之原點用荷重值直至反轉荷重值之壓縮位移 L1: Compressive displacement from the origin load value to the reverse load value when the load is applied
L2:自解除負荷時之反轉荷重值直至原點用荷重值之釋壓位移 L2: the reversal load value from the time of releasing the load until the pressure displacement of the origin load value
上述10%K值為2000N/mm2以上且未達6000N/mm2。上述10%K值較佳為3200N/mm2以上,更佳為2500N/mm2以上,且較佳為5800N/mm2以下,更佳為5500N/mm2以下。若上述10%K值為上述下限以上,則有效地去除黏合劑樹脂,且有效地使導電層或電極之表面之氧化膜貫通,而電極間之連接電阻有效地變低。若上述10%K值為上述上限以下,則變得更加難以於電極產生裂痕。若上述10%K值為3500N/mm2以上,則連接電阻有效地變低。 The above 10% K value is 2000 N/mm 2 or more and less than 6000 N/mm 2 . Preferably above 10% K value of 3200N / mm 2 or more, more preferably 2500N / mm 2 or more, and preferably 5800N / mm 2 or less, more preferably 5500N / mm 2 or less. When the above-mentioned 10% K value is at least the above lower limit, the binder resin is effectively removed, and the oxide film on the surface of the conductive layer or the electrode is effectively penetrated, and the connection resistance between the electrodes is effectively lowered. When the above 10% K value is equal to or less than the above upper limit, it becomes more difficult to cause cracks in the electrode. When the above 10% K value is 3500 N/mm 2 or more, the connection resistance is effectively lowered.
上述30%荷重值相對於上述10%荷重值之比(30%荷重值/10%荷重值)為3.0以下。上述比(30%荷重值/10%荷重值)更佳為2.9以下。若上述比(30%荷重值/10%荷重值)為上述上限以下,則電極與導電性粒子之接觸面積充分變大,而電極間之連接電阻有效地變低,且電極間之連接可靠性進一步變高。上述比(30%荷重值/10%荷重值)較佳為1.5以上。 The ratio of the above 30% load value to the above 10% load value (30% load value/10% load value) is 3.0 or less. The above ratio (30% load value/10% load value) is more preferably 2.9 or less. When the ratio (30% load value / 10% load value) is equal to or less than the above upper limit, the contact area between the electrode and the conductive particles is sufficiently increased, and the connection resistance between the electrodes is effectively lowered, and the connection reliability between the electrodes is obtained. Further higher. The above ratio (30% load value/10% load value) is preferably 1.5 or more.
使上述基材粒子進行30%壓縮變形時之壓縮彈性模數(30%K值)較佳為3000N/mm2以下,更佳為2500N/mm2以下。若上述30%K值為上述上限以下,則導電性粒子與電極之接觸面積進一步變大,進而變得更加難以於電極產生裂痕。上述30%K值較佳為500N/mm2以上。若上述10%K值為3000N/mm2以下,則變得更加難以於電極產生裂痕。若上述10%K值為2500N/mm2以下,則變得相當難以於電極產生裂痕。 The compression elastic modulus (30% K value) when the substrate particles are subjected to 30% compression deformation is preferably 3,000 N/mm 2 or less, more preferably 2,500 N/mm 2 or less. When the value of 30% K is less than or equal to the above upper limit, the contact area between the conductive particles and the electrode is further increased, and further, it is more difficult to cause cracks in the electrode. The above 30% K value is preferably 500 N/mm 2 or more. When the above 10% K value is 3000 N/mm 2 or less, it becomes more difficult to cause cracks in the electrode. When the above 10% K value is 2500 N/mm 2 or less, it becomes quite difficult to cause cracks in the electrode.
將上述基材粒子壓縮40%時之荷重值(40%荷重值)相對於壓縮10%時之荷重值(10%荷重值)之比(40%荷重值/10%荷重值)較佳為6以下,更佳為5以下。若上述比(40%荷重值/10%荷重值)為上述上限以下,則提高連接可靠性之設計範圍進一步變廣。若上述比(40%荷重值/10%荷重值)為上述上限以下,則連接電阻有效地變低。上述比(40%荷重值/10%荷重值)較佳為2以上。 The ratio of the load value (40% load value) when the substrate particles are compressed by 40% to the load value (10% load value) at 10% compression (40% load value / 10% load value) is preferably 6 Hereinafter, it is more preferably 5 or less. When the ratio (40% load value / 10% load value) is equal to or less than the above upper limit, the design range for improving the connection reliability is further widened. When the ratio (40% load value / 10% load value) is equal to or less than the above upper limit, the connection resistance is effectively lowered. The above ratio (40% load value/10% load value) is preferably 2 or more.
上述基材粒子之上述荷重值及上述壓縮彈性模數(10%K值及 30%K值)可以下述方式進行測定。 The above-mentioned load value of the substrate particles and the above-mentioned compressive elastic modulus (10% K value and The 30% K value can be measured in the following manner.
使用微小壓縮試驗機,於圓柱(直徑100μm,金剛石製)之平滑壓頭端面,於25℃、壓縮速度0.3mN/sec、及最大試驗荷重20mN之條件下對基材粒子進行壓縮。測定此時之荷重值(N)及壓縮位移(mm)。可根據獲得之測定值並藉由下述式而求出上述壓縮彈性模數。例如可使用Fischer公司製造之「Fischerscope H-100」等作為上述微小壓縮試驗機。 The substrate particles were compressed on a smooth indenter end face of a cylinder (100 μm in diameter, made of diamond) at 25 ° C, a compression speed of 0.3 mN/sec, and a maximum test load of 20 mN using a micro compression tester. The load value (N) and the compression displacement (mm) at this time were measured. The above-described compression elastic modulus can be obtained from the measured value obtained by the following formula. For example, "Fischerscope H-100" manufactured by Fischer Co., Ltd. or the like can be used as the above-described micro compression tester.
10%K值或30%K值(N/mm2)=(3/21/2)‧F‧S-3/2‧R-1/2 10% K value or 30% K value (N/mm 2 ) = (3/2 1/2 )‧F‧S -3/2 ‧R -1/2
F:使基材粒子進行10%或30%壓縮變形時之荷重值(N) F: load value when the substrate particles are subjected to 10% or 30% compression deformation (N)
S:使基材粒子進行10%或30%壓縮變形時之壓縮位移(mm) S: compression displacement (mm) when the substrate particles are subjected to 10% or 30% compression deformation
R:基材粒子之半徑(mm) R: radius of the substrate particles (mm)
上述壓縮彈性模數普遍且定量地表示基材粒子之硬度。藉由使用上述壓縮彈性模數,可定量且特定地表示基材粒子之硬度。 The above-described compression elastic modulus generally and quantitatively indicates the hardness of the substrate particles. By using the above-described compression elastic modulus, the hardness of the substrate particles can be quantitatively and specifically expressed.
上述基材粒子之破裂應變為10%以上且30%以下。於對粒子之壓縮行為進行評價時,對在某固定荷重值下位移量大幅變化之時點進行觀察。於該變化之時點之荷重值為破裂荷重值,位移量為破裂位移。將該破裂位移與壓縮前之粒徑之比(破裂位移/壓縮前粒徑)×100定義為破裂應變(%)。例如,於壓縮前之粒徑為5μm之粒子於位移量1μm之時點觀察到破裂行為的情形時,算出破裂應變為20%。於核殼粒子之情形時,通常於位移之初期觀察到殼之破裂行為。若上述破裂應變為上述下限以上,則黏合劑樹脂之去除性、導電層及電極之氧化膜之貫通性進一步變高,而連接電阻進一步變低。若上述破裂應變為上述上限以下,則顯現中期之柔軟性,而導電性粒子與電極之接觸面積進一步變大,連接電阻進一步變低。 The fracture strain of the substrate particles is 10% or more and 30% or less. When evaluating the compression behavior of the particles, the time at which the displacement amount largely changes at a certain fixed load value is observed. The load value at the time of the change is the rupture load value, and the displacement amount is the rupture displacement. The ratio of the fracture displacement to the particle diameter before compression (fracture displacement/particle diameter before compression) × 100 was defined as the fracture strain (%). For example, when a particle having a particle diameter of 5 μm before compression is observed at a displacement of 1 μm, the fracture strain is calculated to be 20%. In the case of core-shell particles, the cracking behavior of the shell is usually observed at the beginning of the displacement. When the rupture strain is at least the above lower limit, the adhesiveness of the binder resin, the penetration of the conductive layer and the oxide film of the electrode are further increased, and the connection resistance is further lowered. When the rupture strain is at most the above upper limit, the flexibility in the middle stage is exhibited, and the contact area between the conductive particles and the electrode is further increased, and the connection resistance is further lowered.
上述破裂應變可根據上述之壓縮彈性模數之測定進行評價,藉由讀取壓縮位移曲線之不連接點之位移量而可測定。 The above-mentioned rupture strain can be evaluated based on the measurement of the above-described compression elastic modulus, and can be measured by reading the displacement amount of the non-joining point of the compression displacement curve.
上述核之粒徑較佳為0.5μm以上,更佳為1μm以上,且較佳為500μm以下,更佳為100μm以下,進而較佳為50μm以下,尤佳為20μm以下,最佳為10μm以下。若上述核之粒徑為上述下限以上及上述上限以下,則10%K值、30%K值、上述比(30%荷重值/10%荷重值)及上述比(40%荷重值/10%荷重值)容易顯示較佳之值,而可較佳地將基材粒子用於導電性粒子之用途。例如,若上述核之粒徑為上述下限以上及上述上限以下,則於使用上述導電性粒子將電極間連接之情形時,導電性粒子與電極之接觸面積充分變大,且於形成導電層時變得難以形成凝集之導電性粒子。又,經由導電性粒子而連接之電極間之間隔不會變得過大,且導電層變得難以自基材粒子之表面剝離。 The particle diameter of the core is preferably 0.5 μm or more, more preferably 1 μm or more, and is preferably 500 μm or less, more preferably 100 μm or less, still more preferably 50 μm or less, still more preferably 20 μm or less, and most preferably 10 μm or less. When the particle diameter of the core is not less than the above lower limit and not more than the above upper limit, the 10% K value, the 30% K value, the above ratio (30% load value/10% load value), and the above ratio (40% load value/10%) The load value is easy to display a preferable value, and the substrate particles can be preferably used for the use of the conductive particles. For example, when the particle diameter of the core is not less than the above lower limit and not more than the above upper limit, when the electrodes are connected between the electrodes by using the conductive particles, the contact area between the conductive particles and the electrode is sufficiently increased, and when the conductive layer is formed It becomes difficult to form agglomerated conductive particles. Moreover, the interval between the electrodes connected via the conductive particles does not become excessively large, and the conductive layer becomes difficult to peel off from the surface of the substrate particles.
關於上述核之粒徑,於上述核為真球狀之情形時意指直徑,於上述核為真球狀以外之形狀之情形時,意指假定為相當於其體積之真球時之直徑。又,核之粒徑意指藉由任意之粒徑測定裝置對核進行測定而獲得之平均粒徑。例如可利用使用雷射光散射、電阻值變化、拍攝後之圖像解析等原理之粒度分佈測定機。 The particle diameter of the above-mentioned core means a diameter when the core is a true spherical shape, and when the core is a shape other than a true spherical shape, it means a diameter assumed to be a true sphere corresponding to its volume. Further, the particle diameter of the core means an average particle diameter obtained by measuring a core by an arbitrary particle diameter measuring device. For example, a particle size distribution measuring machine using the principles of laser light scattering, resistance value change, and image analysis after photographing can be used.
上述基材粒子具備核與配置於該核之表面上之殼,為核殼粒子。核殼粒子之壓縮恢復率、10%K值、30%K值、上述比(30%荷重值/10%荷重值)及上述比(40%荷重值/10%荷重值)滿足上述之值,藉此可降低電極間之連接電阻,且提高電極間之連接可靠性。 The substrate particles have a core and a shell disposed on the surface of the core, and are core-shell particles. The compression recovery ratio of the core-shell particles, the 10% K value, the 30% K value, the above ratio (30% load value/10% load value), and the above ratio (40% load value/10% load value) satisfy the above values. Thereby, the connection resistance between the electrodes can be reduced, and the connection reliability between the electrodes can be improved.
上述核較佳為有機核。上述殼較佳為無機殼。較佳為上述核為有機核、且上述殼為無機殼。上述基材粒子較佳為具備有機核、與配置於該有機核之表面上之無機殼之核殼粒子,且較佳為核殼型之有機無機混合粒子。若上述核為有機核,又上述殼為無機殼,則壓縮恢復率、10%K值、30%K值、上述比(30%荷重值/10%荷重值)及上述比(40%荷重值/10%荷重值)容易滿足上述之值。 The above core is preferably an organic core. The above shell is preferably an inorganic shell. Preferably, the core is an organic core, and the shell is an inorganic shell. The substrate particles are preferably core-shell particles having an organic core and an inorganic shell disposed on the surface of the organic core, and are preferably core-shell type organic-inorganic hybrid particles. If the core is an organic core and the shell is an inorganic shell, the compression recovery rate, the 10% K value, the 30% K value, the above ratio (30% load value / 10% load value), and the above ratio (40% load) The value / 10% load value) easily satisfies the above values.
上述核較佳為有機核,且較佳為有機粒子。上述有機核及上述 有機粒子與無機核及無機粒子相比,相對柔軟,因此於相對柔軟之有機核之表面上形成殼,結果容易滿足壓縮恢復率、上述比(30%荷重值/10%荷重值)及上述比(40%荷重值/10%荷重值)。 The above core is preferably an organic core, and is preferably an organic particle. The above organic core and the above Since the organic particles are relatively soft compared with the inorganic core and the inorganic particles, a shell is formed on the surface of the relatively soft organic core, and as a result, the compression recovery ratio, the above ratio (30% load value/10% load value), and the above ratio are easily satisfied. (40% load value / 10% load value).
作為用以形成上述有機核之材料,可較佳地使用各種有機物。作為用以形成上述有機核之材料,例如可使用:聚乙烯、聚丙烯、聚苯乙烯、聚氯乙烯、聚偏二氯乙烯、聚丙烯、聚異丁烯、聚丁二烯等聚烯烴樹脂;聚甲基丙烯酸甲酯、聚丙烯酸甲酯等丙烯酸系樹脂;聚對苯二甲酸烷二酯、聚碸、聚碳酸酯、聚醯胺、酚甲醛樹脂、三聚氰胺甲醛樹脂、苯并胍胺甲醛樹脂、脲甲醛樹脂、及使1種或2種以上具有乙烯性不飽和基之各種聚合性單體聚合而獲得之聚合物等。藉由使1種或2種以上具有乙烯性不飽和基之各種聚合性單體進行聚合,而容易設計及合成適合導電材料之具有任意壓縮時之物性之基材粒子。 As the material for forming the above organic core, various organic substances can be preferably used. As a material for forming the above organic core, for example, a polyolefin resin such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polypropylene, polyisobutylene or polybutadiene can be used; Acrylic resin such as methyl methacrylate or polymethyl acrylate; polyalkylene terephthalate, polyfluorene, polycarbonate, polyamine, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, A urea-formaldehyde resin and a polymer obtained by polymerizing one or two or more kinds of polymerizable monomers having an ethylenically unsaturated group. By polymerizing one or two or more kinds of polymerizable monomers having an ethylenically unsaturated group, it is easy to design and synthesize a substrate particle having a physical property at any compression suitable for a conductive material.
於使具有乙烯性不飽和基之單體聚合而獲得上述有機核之情形時,作為上述具有乙烯性不飽和基之單體,可列舉非交聯性之單體與交聯性之單體。 When the monomer having an ethylenically unsaturated group is polymerized to obtain the organic nucleus, the monomer having an ethylenically unsaturated group may be a non-crosslinkable monomer and a crosslinkable monomer.
作為上述非交聯性之單體,例如可列舉:苯乙烯、α-甲基苯乙烯等苯乙烯系單體;(甲基)丙烯酸、順丁烯二酸、順丁烯二酸酐等含羧基單體;(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸鯨蠟酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異酯等(甲基)丙烯酸烷基酯類;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸甘油酯、聚氧乙烯(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯等含氧原子之(甲基)丙烯酸酯類;(甲基)丙烯腈等含腈單體;甲基乙烯基醚、乙基乙烯基醚、丙基乙烯基醚等乙烯基醚類;乙酸乙烯酯、丁酸乙烯酯、月桂酸乙烯酯、硬脂酸乙烯酯等酸乙烯酯類;乙烯、丙烯、異戊二烯、丁二烯等不飽和烴;(甲基)丙烯酸 三氟甲酯、(甲基)丙烯酸五氟乙酯、氯乙烯、氟乙烯、氯苯乙烯等含鹵素單體等。 Examples of the non-crosslinkable monomer include a styrene monomer such as styrene or α-methylstyrene, and a carboxyl group such as (meth)acrylic acid, maleic acid or maleic anhydride. Monomer; methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (methyl) ) lauryl acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, (meth) acrylate Alkyl (meth) acrylate such as ester; 2-hydroxyethyl (meth) acrylate, glyceryl (meth) acrylate, polyoxyethylene (meth) acrylate, glycidyl (meth) acrylate, etc. (meth) acrylate containing oxygen atom; nitrile containing monomer such as (meth) acrylonitrile; vinyl ether such as methyl vinyl ether, ethyl vinyl ether or propyl vinyl ether; vinyl acetate , vinyl acetate such as vinyl butyrate, vinyl laurate, vinyl stearate; unsaturated hydrocarbons such as ethylene, propylene, isoprene, butadiene; trifluoromethyl (meth)acrylate, A halogen-containing monomer such as pentafluoroethyl methacrylate, vinyl chloride, vinyl fluoride or chlorostyrene.
作為上述交聯性之單體,例如可列舉:四羥甲基甲烷四(甲基)丙烯酸酯、四羥甲基甲烷三(甲基)丙烯酸酯、四羥甲基甲烷二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、甘油三(甲基)丙烯酸酯、甘油二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、(聚)1,4-丁二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等多官能(甲基)丙烯酸酯類;(異)氰尿酸三烯丙酯、偏苯三酸三烯丙酯、二乙烯苯、鄰苯二甲酸二烯丙酯、二烯丙基丙烯醯胺、二烯丙醚、γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷、三甲氧基矽烷基苯乙烯、乙烯基三甲氧基矽烷等含矽烷單體等。 Examples of the crosslinkable monomer include tetramethylol methane tetra(meth)acrylate, tetramethylol methane tri(meth)acrylate, and tetramethylolmethane di(meth)acrylate. Ester, trimethylolpropane tri(meth) acrylate, dipentaerythritol hexa(meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol tri(meth) acrylate, glycerol di(methyl) Acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, (poly)1,4-butanediol di(meth)acrylate, 1,4 - Polyfunctional (meth) acrylates such as butanediol di(meth) acrylate; triallyl (iso) cyanurate, triallyl trimellitate, divinyl benzene, phthalic acid Allyl ester, diallyl acrylamide, diallyl ether, γ-(meth) propylene methoxy propyl trimethoxy decane, trimethoxy decyl styrene, vinyl trimethoxy decane, etc. Decane monomer and the like.
利用公知之方法使上述具有乙烯性不飽和基之聚合性單體聚合,藉此可獲得上述有機核。作為該方法,例如可列舉:於自由基聚合起始劑之存在下進行懸浮聚合之方法、以及使用非交聯之種粒子與自由基聚合起始劑一起使單體膨潤而聚合之方法等。 The above organic nucleus can be obtained by polymerizing the above polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of the method include a method in which suspension polymerization is carried out in the presence of a radical polymerization initiator, and a method in which a non-crosslinked seed particle is swollen with a radical polymerization initiator to polymerize the monomer.
尤其是關於最適合本發明之核,將上述核壓縮10%時之壓縮彈性模數(10%K值)較佳為1500N/mm2以上且4000N/mm2以下,更佳為2000N/mm2以上且3500N/mm2以下。上述核之壓縮恢復率較佳為50%以上,更佳為55%以上。若上述核滿足上述10%K值,又滿足上述壓縮彈性模數,則容易將上述核經無機殼被覆之基材粒子之10%K值、上述比(10%荷重值/30%荷重值)、及壓縮恢復率控制為較佳之範圍。 Particularly with regard to the present invention most suitable for the nuclear, nuclear above compression modulus of elasticity (10% K value) is preferably 1500N / mm 2 and not more than 4000N / mm 2 or less 10%, more preferably 2000N / mm 2 Above and 3500N/mm 2 or less. The compression recovery ratio of the above core is preferably 50% or more, more preferably 55% or more. If the above-mentioned core satisfies the above-mentioned 10% K value and satisfies the above-mentioned compression elastic modulus, it is easy to set the 10% K value of the above-mentioned core-coated substrate particles, and the above ratio (10% load value / 30% load value) ), and compression recovery rate control is a better range.
將上述核之物性設計為上述範圍之方法並無限定,例如於使具有乙烯性不飽和基之單體聚合而獲得上述核之情形時,可列舉:使用50重量%以上之於(甲基)丙烯醯基之間具有乙二醇結構或亞甲基結構等具有可撓性之結構的交聯性單體作為用以形成核之化合物的方法。 作為此種交聯性單體,例如可列舉:(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、(聚)四亞甲基二(甲基)丙烯酸酯及1,4-丁二醇二(甲基)丙烯酸酯等。於使用70重量%以上之如二乙烯苯之具有剛直結構之交聯性單體而獲得之核中,10%K值容易變高。又,即便為使藉由溶膠凝膠法,使乙烯基三甲氧基矽烷或(甲基)丙烯醯氧基三甲氧基矽烷之類之矽烷偶合劑進行聚縮合而粒子化之粒子化物吸收具有乙烯性不飽和基之單體後,進行聚合所得之粒子,亦可將核之物性設計為最佳之值。構成上述核之材料不僅含有有機化合物,亦可含有具有矽原子之化合物。上述核中之碳原子之含量相對於矽原子之含量之比(碳原子之含量/矽原子之含量)較佳為1.2以上。上述比(碳原子之含量/矽原子之含量)為1.2以上之核相當於有機核。 The method of designing the physical properties of the core to the above range is not limited. For example, when a monomer having an ethylenically unsaturated group is polymerized to obtain the above-mentioned core, 50% by weight or more of (meth) is used. A crosslinkable monomer having a flexible structure such as an ethylene glycol structure or a methylene structure between the acryl groups serves as a method for forming a compound of the core. Examples of such a crosslinkable monomer include (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, and (poly)tetramethylene di(methyl). Acrylate and 1,4-butanediol di(meth)acrylate. In the core obtained by using 70% by weight or more of a crosslinkable monomer having a rigid structure such as divinylbenzene, the 10% K value tends to become high. Further, even if a decane coupling agent such as vinyltrimethoxydecane or (meth)acryloxytrimethoxydecane is subjected to polycondensation by a sol-gel method, the particulate matter absorbed by the particles is absorbed by ethylene. After the monomer of the unsaturated group, the particles obtained by the polymerization may be designed to have the optimum physical properties. The material constituting the core may contain not only an organic compound but also a compound having a ruthenium atom. The ratio of the content of the carbon atom in the core to the content of the ruthenium atom (the content of the carbon atom / the content of the ruthenium atom) is preferably 1.2 or more. The nucleus in which the ratio (content of carbon atoms / content of ruthenium atoms) is 1.2 or more corresponds to an organic nucleus.
就於形成殼時及使用基材粒子時抑制核之變形之觀點而言,上述核之分解溫度較佳為超過200℃,更佳為超過250℃,進而更佳為超過300℃。上述核之分解溫度可超過400℃,亦可超過500℃,亦可超過600℃,亦可超過800℃。 The decomposition temperature of the core is preferably more than 200 ° C, more preferably more than 250 ° C, and still more preferably more than 300 ° C from the viewpoint of forming a shell and suppressing deformation of the core when the substrate particles are used. The decomposition temperature of the above core may exceed 400 ° C, may exceed 500 ° C, may exceed 600 ° C, and may exceed 800 ° C.
上述基材粒子為核殼粒子。上述殼係配置於上述核之表面上。上述殼較佳為被覆上述核之表面。上述殼較佳為無機殼。 The substrate particles are core-shell particles. The shell system is disposed on the surface of the core. Preferably, the shell covers the surface of the core. The above shell is preferably an inorganic shell.
上述無機殼較佳為含有矽原子50重量%以上,於該情形時,上述無機殼係含有矽原子作為主成分之無機殼。上述無機殼亦可含有碳原子,但於含有碳原子之情形時,只要矽原子為主成分,則亦稱為無機殼。 The inorganic shell preferably contains 50% by weight or more of ruthenium atoms. In this case, the inorganic shell contains an inorganic shell containing a ruthenium atom as a main component. The inorganic shell may also contain carbon atoms, but when it contains a carbon atom, it is also called an inorganic shell as long as it is a main component.
上述無機殼較佳為藉由在上述核之表面上利用溶膠凝膠法將金屬烷氧化物製成殼狀物後對該殼狀物進行焙燒而形成。於溶膠凝膠法中,容易於上述核之表面上配置殼狀物。於進行上述焙燒之情形時,於上述基材粒子中,焙燒後上述核未藉由揮發等被去除而殘存。上述基材粒子於焙燒後具備上述核。再者,若假設於焙燒後上述核藉由揮 發等被去除,則上述10%K值變得相當低。 The inorganic shell is preferably formed by baking a metal alkoxide on a surface of the core by a sol-gel method and then baking the shell. In the sol-gel method, a shell is easily disposed on the surface of the core. In the case of performing the above-described baking, in the substrate particles, the core is not removed by volatilization or the like after firing. The substrate particles have the core described above after firing. Furthermore, if it is assumed that the above-mentioned core is used after the roasting When the hair is removed, the above 10% K value becomes quite low.
作為上述溶膠凝膠法之具體方法,可列舉:使四乙氧基矽烷等無機單體共存於含有核、水或醇等溶劑、界面活性劑、及氨水溶液等觸媒之分散液中而進行界面溶膠反應之方法;以及藉由與水或醇等溶劑、及氨水溶液共存之四乙氧基矽烷等無機單體而進行溶膠凝膠反應後,使溶膠凝膠反應物異凝集於核之方法等。於上述溶膠凝膠法中,上述金屬烷氧化物較佳為進行水解及聚縮合。 The specific method of the sol-gel method is carried out by allowing an inorganic monomer such as tetraethoxysilane to coexist in a dispersion containing a solvent such as a core, water or alcohol, a surfactant, and a catalyst such as an aqueous ammonia solution. Method for interfacial sol reaction; and method for sol-gel reaction of a sol-gel reactant by a sol-gel reaction by an inorganic monomer such as tetraethoxy decane coexisting with a solvent such as water or an alcohol or an aqueous ammonia solution Wait. In the above sol-gel method, the metal alkoxide is preferably subjected to hydrolysis and polycondensation.
於上述溶膠凝膠法中,較佳為使用界面活性劑。較佳為於界面活性劑之存在下,藉由溶膠凝膠法而將上述金屬烷氧化物製成殼狀物。上述界面活性劑並無特別限定。可適當選擇使用上述界面活性劑以形成良好之殼狀物。作為上述界面活性劑,可列舉:陽離子性界面活性劑、陰離子性界面活性劑及非離子性界面活性劑等。其中,就可形成良好之無機殼而言,較佳為陽離子性界面活性劑。 In the above sol-gel method, a surfactant is preferably used. Preferably, the metal alkoxide is formed into a shell by a sol-gel method in the presence of a surfactant. The above surfactant is not particularly limited. The above surfactant can be suitably selected to form a good shell. Examples of the surfactant include a cationic surfactant, an anionic surfactant, and a nonionic surfactant. Among them, a cationic surfactant is preferred in that a good inorganic shell can be formed.
作為上述陽離子性界面活性劑,可列舉:四級銨鹽及四級鏻鹽等。作為上述陽離子性界面活性劑之具體例,可列舉:十六烷基溴化銨等。 Examples of the cationic surfactant include a quaternary ammonium salt and a quaternary phosphonium salt. Specific examples of the above cationic surfactant include cetyl ammonium bromide and the like.
為了於上述核之表面上,形成上述無機殼,較佳為焙燒上述殼狀物。可根據焙燒條件而調整無機殼中之交聯度。又,藉由進行焙燒,而與未進行焙燒之情形相比,上述基材粒子之10%K值及30%K值顯示進一步較佳之值。尤其是藉由提高交聯度,10%K值充分變高。 In order to form the above inorganic shell on the surface of the above core, it is preferred to calcine the above shell. The degree of crosslinking in the inorganic shell can be adjusted depending on the firing conditions. Further, by baking, the 10% K value and the 30% K value of the substrate particles showed a further preferable value as compared with the case where the baking was not performed. In particular, by increasing the degree of crosslinking, the 10% K value is sufficiently high.
上述無機殼較佳為藉由在上述核之表面上利用溶膠凝膠法將金屬烷氧化物製成殼狀物後,將該殼狀物於100℃以上(焙燒溫度)下進行焙燒而形成。上述焙燒溫度更佳為150℃以上,進而較佳為200℃以上。若上述焙燒溫度為上述下限以上,則無機殼中之交聯度進一步變適度,而10%K值、30%K值、上述比(30%荷重值/10%荷重值)及上述比(40%荷重值/10%荷重值)顯示進一步較佳之值,從而可進一步較佳 地將基材粒子用於導電性粒子之用途。 Preferably, the inorganic shell is formed by forming a metal alkoxide into a shell by a sol-gel method on the surface of the core, and then baking the shell at 100 ° C or higher (calcination temperature) to form a shell. . The calcination temperature is more preferably 150 ° C or higher, and still more preferably 200 ° C or higher. When the calcination temperature is at least the above lower limit, the degree of crosslinking in the inorganic shell is further moderated, and the 10% K value, the 30% K value, the above ratio (30% load value/10% load value), and the above ratio ( 40% load value / 10% load value) shows a further preferred value, which can be further preferably The substrate particles are used for the use of conductive particles.
上述無機殼較佳為藉由在上述核之表面上利用溶膠凝膠法將金屬烷氧化物製成殼狀物後,將該殼狀物於上述有機核之分解溫度以下(焙燒溫度)進行焙燒而形成。上述焙燒溫度較佳為比上述核之分解溫度低10℃以上之溫度,更佳為比上述核之分解溫度低50℃以上之溫度。又,上述焙燒溫度較佳為500℃以下,更佳為300℃以下,進而較佳為200℃以下。若上述焙燒溫度為上述上限以下,則可抑制上述核之熱劣化及變形,而可獲得10%K值、30%K值、上述比(30%荷重值/10%荷重值)及上述比(40%荷重值/10%荷重值)顯示良好之值之基材粒子。 Preferably, the inorganic shell is formed by forming a metal alkoxide into a shell by a sol-gel method on the surface of the core, and then the shell is subjected to a decomposition temperature (calcination temperature) of the organic core. It is formed by baking. The calcination temperature is preferably a temperature lower than the decomposition temperature of the core by 10 ° C or higher, and more preferably a temperature lower than the decomposition temperature of the core by 50 ° C or higher. Further, the baking temperature is preferably 500 ° C or lower, more preferably 300 ° C or lower, and still more preferably 200 ° C or lower. When the baking temperature is not more than the above upper limit, thermal deterioration and deformation of the core can be suppressed, and a 10% K value, a 30% K value, the above ratio (30% load value/10% load value), and the above ratio can be obtained ( 40% load value / 10% load value) substrate particles showing good values.
作為上述金屬烷氧化物,可列舉:矽烷氧化物、鈦烷氧化物、鋯烷氧化物及鋁烷氧化物等。就形成良好之無機殼之觀點而言,上述金屬烷氧化物較佳為矽烷氧化物、鈦烷氧化物、鋯烷氧化物或鋁烷氧化物,更佳為矽烷氧化物、鈦烷氧化物或鋯烷氧化物,進而較佳為矽烷氧化物。就形成良好之無機殼之觀點而言,上述金屬烷氧化物中之金屬原子較佳為矽原子、鈦原子、鋯原子或鋁原子,更佳為矽原子、鈦原子或鋯原子,進而較佳為矽原子。上述金屬烷氧化物可僅使用1種,亦可併用2種以上。 Examples of the metal alkoxide include a decane oxide, a titanium alkoxide, a zirconium alkoxide, and an aluminoxane. The metal alkoxide is preferably a decane oxide, a titanium alkoxide, a zirconium alkoxide or an aluminum alkoxide, more preferably a decane oxide or a titanium alkoxide, from the viewpoint of forming a good inorganic shell. Or a zirconium alkoxide, more preferably a decane oxide. From the viewpoint of forming a good inorganic shell, the metal atom in the above metal alkoxide is preferably a ruthenium atom, a titanium atom, a zirconium atom or an aluminum atom, more preferably a ruthenium atom, a titanium atom or a zirconium atom, and further Jia is a scorpion atom. The metal alkoxide may be used alone or in combination of two or more.
就形成良好之無機殼之觀點而言,上述金屬烷氧化物較佳為下述式(1)所表示之金屬烷氧化物。 The metal alkoxide is preferably a metal alkoxide represented by the following formula (1) from the viewpoint of forming a good inorganic shell.
M(R1)n(OR2)4-n (1) M(R1) n (OR2) 4-n (1)
上述式(1)中,M為矽原子、鈦原子或鋯原子,R1表示苯基、碳數1~30之烷基、具有聚合性雙鍵之碳數1~30之有機基或具有環氧基之碳數1~30之有機基,R2表示碳數1~6之烷基,n表示0~2之整數。n為2時,複數個R1可相同,亦可不同。複數個R2可相同,亦可不同。 In the above formula (1), M is a halogen atom, a titanium atom or a zirconium atom, and R1 represents a phenyl group, an alkyl group having 1 to 30 carbon atoms, an organic group having a carbon number of 1 to 30 having a polymerizable double bond, or an epoxy group. The organic group having a carbon number of 1 to 30, R2 represents an alkyl group having 1 to 6 carbon atoms, and n represents an integer of 0 to 2. When n is 2, a plurality of R1s may be the same or different. A plurality of R2s may be the same or different.
就形成良好之無機殼之觀點而言,上述金屬烷氧化物較佳為下述式(1A)所表示之矽烷氧化物。 The metal alkoxide is preferably a decane oxide represented by the following formula (1A) from the viewpoint of forming a good inorganic shell.
Si(R1)n(OR2)4-n (1A) Si(R1) n (OR2) 4-n (1A)
上述式(1A)中,R1表示苯基、碳數1~30之烷基、具有聚合性雙鍵之碳數1~30之有機基或具有環氧基之碳數1~30之有機基,R2表示碳數1~6之烷基,n表示0~2之整數。n為2時,複數個R1可相同,亦可不同。複數個R2可相同,亦可不同。為有效提高殼所含有之矽原子之含量,上述式(1A)中之n較佳為表示0或1,更佳為表示0。若殼所含有之矽原子之含量較高,則本發明之效果進一步優異。 In the above formula (1A), R1 represents a phenyl group, an alkyl group having 1 to 30 carbon atoms, an organic group having a carbon number of 1 to 30 having a polymerizable double bond, or an organic group having 1 to 30 carbon atoms having an epoxy group. R2 represents an alkyl group having 1 to 6 carbon atoms, and n represents an integer of 0 to 2. When n is 2, a plurality of R1s may be the same or different. A plurality of R2s may be the same or different. In order to effectively increase the content of the ruthenium atoms contained in the shell, n in the above formula (1A) preferably represents 0 or 1, more preferably 0. When the content of the ruthenium atoms contained in the shell is high, the effects of the present invention are further excellent.
於上述R1為碳數1~30之烷基之情形時,作為R1之具體例,可列舉:甲基、乙基、丙基、異丙基、異丁基、正己基、環己基、正辛基、及正癸基等。該烷基之碳數較佳為10以下,更佳為6以下。再者,烷基包含環烷基。 In the case where R1 is an alkyl group having 1 to 30 carbon atoms, specific examples of R1 include methyl group, ethyl group, propyl group, isopropyl group, isobutyl group, n-hexyl group, cyclohexyl group, and n-octyl group. Base, and positive base. The carbon number of the alkyl group is preferably 10 or less, more preferably 6 or less. Further, the alkyl group contains a cycloalkyl group.
作為上述聚合性雙鍵,可列舉碳-碳雙鍵。於上述R1為具有聚合性雙鍵之碳數1~30之有機基之情形時,作為R1之具體例,可列舉乙烯基、烯丙基、異丙烯基、及3-(甲基)丙烯醯氧基烷基等。作為上述(甲基)丙烯醯氧基烷基,可列舉:(甲基)丙烯醯氧基甲基、(甲基)丙烯醯氧基乙基及(甲基)丙烯醯氧基丙基等。上述具有聚合性雙鍵之碳數1~30之有機基之碳數較佳為2以上,且較佳為30以下,更佳為10以下。上述「(甲基)丙烯醯氧基」意指甲基丙烯醯氧基或丙烯醯氧基。 The polymerizable double bond may, for example, be a carbon-carbon double bond. In the case where the above R1 is an organic group having a carbon number of 1 to 30 having a polymerizable double bond, examples of R1 include a vinyl group, an allyl group, an isopropenyl group, and a 3-(meth)acryl oxime. Oxyalkyl and the like. Examples of the (meth)acryloxyalkylene group include (meth)acryloxymethyl group, (meth)acryloxyethyl group, and (meth)acryloxypropyl group. The carbon number of the organic group having 1 to 30 carbon atoms having a polymerizable double bond is preferably 2 or more, and is preferably 30 or less, more preferably 10 or less. The above "(meth)acryloxy group" means a methacryloxy group or an acryloxy group.
於上述R1為具有環氧基之碳數1~30之有機基之情形時,作為R1之具體例,可列舉:1,2-環氧基乙基、1,2-環氧基丙基、2,3-環氧基丙基、3,4-環氧基丁基、3-縮水甘油氧基丙基、及2-(3,4-環氧基環己基)乙基等。上述具有環氧基之碳數1~30之有機基之碳數較佳為8以下,更佳為6以下。再者,上述具有環氧基之碳數1~30之有機基係除含有碳原子及氫原子外,亦含有源自環氧基之氧原子之基。 In the case where the above R1 is an organic group having an epoxy group having 1 to 30 carbon atoms, specific examples of R1 include 1,2-epoxyethyl group and 1,2-epoxypropyl group. 2,3-epoxypropyl, 3,4-epoxybutyl, 3-glycidoxypropyl, and 2-(3,4-epoxycyclohexyl)ethyl, and the like. The carbon number of the organic group having 1 to 30 carbon atoms having an epoxy group is preferably 8 or less, more preferably 6 or less. Further, the organic group having 1 to 30 carbon atoms having an epoxy group contains a group derived from an oxygen atom derived from an epoxy group in addition to a carbon atom and a hydrogen atom.
作為上述R2之具體例,可列舉:甲基、乙基、正丙基、異丙基、正丁基、及異丁基等。為了有效提高殼所含有之矽原子之含量,上述R2較佳為表示甲基或乙基。 Specific examples of the above R2 include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, an n-butyl group, and an isobutyl group. In order to effectively increase the content of the ruthenium atoms contained in the shell, the above R2 preferably represents a methyl group or an ethyl group.
作為上述矽烷氧化物之具體例,可列舉:四甲氧基矽烷、四乙氧基矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷、異丙基三甲氧基矽烷、異丁基三甲氧基矽烷、環己基三甲氧基矽烷、正己基三甲氧基矽烷、正辛基三乙氧基矽烷、正癸基三甲氧基矽烷、苯基三甲氧基矽烷、二甲基二甲氧基矽烷、及二異丙基二甲氧基矽烷等。亦可使用該等以外之矽烷氧化物。 Specific examples of the above decane oxide include tetramethoxy decane, tetraethoxy decane, methyl trimethoxy decane, methyl triethoxy decane, ethyl trimethoxy decane, and ethyl triethyl ethane. Oxy decane, isopropyl trimethoxy decane, isobutyl trimethoxy decane, cyclohexyl trimethoxy decane, n-hexyl trimethoxy decane, n-octyl triethoxy decane, n-decyl trimethoxy decane And phenyltrimethoxydecane, dimethyldimethoxydecane, and diisopropyldimethoxydecane. It is also possible to use decane oxides other than these.
為了有效提高殼所含有之矽原子之含量,較佳為使用四甲氧基矽烷或四乙氧基矽烷作為上述殼之材料。上述殼之材料之100重量%中,四甲氧基矽烷與四乙氧基矽烷之合計含量較佳為50重量%以上(亦可為總量)。上述殼100重量%中,源自四甲氧基矽烷之骨架與源自四乙氧基矽烷之骨架之合計含量較佳為50重量%以上(亦可為總量)。 In order to effectively increase the content of the ruthenium atoms contained in the shell, it is preferred to use tetramethoxy decane or tetraethoxy decane as the material of the above shell. The total content of tetramethoxy decane and tetraethoxy decane in 100% by weight of the material of the shell is preferably 50% by weight or more (may also be the total amount). In 100% by weight of the shell, the total content of the skeleton derived from tetramethoxynonane and the skeleton derived from tetraethoxysilane is preferably 50% by weight or more (may also be the total amount).
作為上述鈦烷氧化物之具體例,可列舉:鈦四甲氧化物、鈦四乙氧化物、鈦四異丙氧化物、及鈦四丁氧化物等。亦可使用該等以外之鈦烷氧化物。 Specific examples of the titanium alkoxide include titanium tetramethoxide, titanium tetraethoxy oxide, titanium tetraisopropyl oxide, and titanium tetrabutyl oxide. Titanium alkoxides other than these may also be used.
作為上述鋯烷氧化物之具體例,可列舉:鋯四甲氧化物、鋯四乙氧化物、鋯四異丙氧化物、及鋯四丁氧化物等。亦可使用該等以外之鋯烷氧化物。 Specific examples of the zirconium alkoxide include zirconium tetramethoxide, zirconium tetraethoxy oxide, zirconium tetraisopropoxide, and zirconium tetrabutoxide. Zirconium alkoxides other than these may also be used.
上述金屬烷氧化物較佳為包含具有於金屬原子直接鍵結有4個氧原子之結構之金屬烷氧化物。上述金屬烷氧化物較佳為包含下述式(1a)所表示之金屬烷氧化物。 The metal alkoxide is preferably a metal alkoxide having a structure in which four oxygen atoms are directly bonded to a metal atom. The metal alkoxide preferably contains a metal alkoxide represented by the following formula (1a).
M(OR2)4 (1a) M(OR2) 4 (1a)
上述式(1a)中,M為矽原子、鈦原子或鋯原子,R2表示碳數1~6之烷基。複數個R2可相同,亦可不同。 In the above formula (1a), M is a halogen atom, a titanium atom or a zirconium atom, and R2 represents an alkyl group having 1 to 6 carbon atoms. A plurality of R2s may be the same or different.
上述金屬烷氧化物較佳為包含具有於矽原子直接鍵結有4個氧原子之結構之矽烷氧化物。於該矽烷氧化物中,通常4個氧原子藉由單鍵而鍵結於矽原子。上述金屬烷氧化物較佳為包含下述式(1Aa)所表示之矽烷氧化物。 The metal alkoxide preferably contains a decane oxide having a structure in which a halogen atom is directly bonded to four atoms. In the decane oxide, usually four oxygen atoms are bonded to a ruthenium atom by a single bond. The metal alkoxide preferably contains a decane oxide represented by the following formula (1Aa).
Si(OR2)4 (1Aa) Si(OR2) 4 (1Aa)
上述式(1Aa)中,R2表示碳數1~6之烷基。複數個R2可相同,亦可不同。 In the above formula (1Aa), R2 represents an alkyl group having 1 to 6 carbon atoms. A plurality of R2s may be the same or different.
就有效使10%K值變高,且有效使30%K值變低之觀點而言,上述用以形成無機殼之金屬烷氧化物100莫耳%中,上述具有於金屬原子直接鍵結有4個氧原子之結構之金屬烷氧化物、上述式(1a)所表示之金屬烷氧化物、上述具有於矽原子直接鍵結有4個氧原子之結構之矽烷氧化物、或上述式(1Aa)所表示之矽烷氧化物之各含量較佳為20莫耳%以上,更佳為40莫耳%以上,進而較佳為50莫耳%以上,進而更佳為55莫耳%以上,尤佳為60莫耳%以上,且為100莫耳%以下。上述用以形成無機殼之金屬烷氧化物之總量亦可為上述具有於金屬原子直接鍵結有4個氧原子之結構之金屬烷氧化物、上述式(1a)所表示之金屬烷氧化物、上述具有於矽原子直接鍵結有4個氧原子之結構之矽烷氧化物、或上述式(1Aa)所表示之矽烷氧化物。 In view of the fact that the 10% K value is effectively increased and the 30% K value is effectively lowered, in the above 100 mol% of the metal alkoxide for forming an inorganic shell, the above has a direct bond to the metal atom. a metal alkoxide having a structure of four oxygen atoms, a metal alkoxide represented by the above formula (1a), a decane oxide having a structure in which a halogen atom is directly bonded to four oxygen atoms, or the above formula ( The content of the decane oxide represented by 1Aa) is preferably 20 mol% or more, more preferably 40 mol% or more, still more preferably 50 mol% or more, and still more preferably 55 mol% or more. Preferably, it is 60% by mole or more, and is 100% by mole or less. The total amount of the metal alkoxide to form the inorganic shell may be the metal alkoxide having a structure in which four oxygen atoms are directly bonded to the metal atom, and the metal alkoxide represented by the above formula (1a) And a decane oxide having a structure in which a ruthenium atom is directly bonded to four oxygen atoms or a decane oxide represented by the above formula (1Aa).
就有效使10%K值變高,且有效使30%K值變低之觀點而言,源自上述無機殼所含有之上述金屬烷氧化物之金屬原子之總個數100%中,直接鍵結有4個氧原子之金屬原子之個數之比例、直接鍵結有4個-O-Si基且直接鍵結有4個上述-O-Si基中之4個氧原子之矽原子之個數的比例分別較佳為20%以上,更佳為40%以上,進而較佳為50%以上,進而更佳為55莫耳%以上,尤佳為60%以上。 From the viewpoint of effectively increasing the 10% K value and effectively lowering the 30% K value, the total number of metal atoms derived from the metal alkoxide contained in the inorganic shell is directly 100%. The ratio of the number of metal atoms having four oxygen atoms bonded to each other, the direct bonding of four -O-Si groups and the direct bonding of four atomic atoms of four of the above -O-Si groups The ratio of the number is preferably 20% or more, more preferably 40% or more, further preferably 50% or more, further preferably 55 mol% or more, and particularly preferably 60% or more.
又,就使10%K值適當變高,且將上述比(30%荷重值/10%荷重值)及上述比(40%荷重值/10%荷重值)控制為適當範圍之觀點而言,上 述無機殼所含有之金屬原子之總個數100%中,直接鍵結有4個氧原子之金屬原子之個數之比例較佳為20%以上,更佳為40%以上,進而較佳為50%以上,進而更佳為55莫耳%以上,尤佳為60%以上。就使10%K值適當變高,且將上述比(30%K值/10%K值)控制為適當範圍之觀點而言,上述金屬烷氧化物為矽烷氧化物,且上述無機殼所含有之矽原子之總個數100%中,直接鍵結有4個-O-Si基且直接鍵結有4個上述-O-Si基中之4個氧原子之矽原子之個數的比例較佳為20%以上,更佳為40%以上,進而較佳為50%以上,進而更佳為55%以上,尤佳為60%以上。 Further, the 10% K value is appropriately increased, and the above ratio (30% load value/10% load value) and the above ratio (40% load value/10% load value) are controlled to an appropriate range. on In the total number of metal atoms contained in the inorganic shell, the ratio of the number of metal atoms directly bonded to four oxygen atoms is preferably 20% or more, more preferably 40% or more, and further preferably It is 50% or more, and more preferably 55 mol% or more, and particularly preferably 60% or more. The metal alkoxide is a decane oxide, and the above inorganic shell is made such that the 10% K value is appropriately increased and the above ratio (30% K value/10% K value) is controlled to an appropriate range. The ratio of the number of 矽 atoms in which four of the above-mentioned -O-Si groups are directly bonded to each other in the total number of 100% of the ruthenium atoms contained therein is directly bonded to four -O-Si groups. It is preferably 20% or more, more preferably 40% or more, further preferably 50% or more, further preferably 55% or more, and particularly preferably 60% or more.
再者,直接鍵結有4個-0-Si基且直接鍵結有4個上述-O-Si基中之4個氧原子之矽原子例如為下述式(11)所表示之結構中的矽原子。具體而言,係下述式(11X)所表示之結構中之附箭頭A進行表示之矽原子。 Further, a germanium atom directly bonded to four-0-Si groups and directly bonded to four of the above-mentioned -O-Si groups is, for example, a structure represented by the following formula (11) Helium atom. Specifically, it is a germanium atom represented by an arrow A in the structure represented by the following formula (11X).
再者,上述式(11)中之氧原子通常與鄰接之矽原子形成矽氧烷鍵。 Further, the oxygen atom in the above formula (11) usually forms a decane bond with an adjacent ruthenium atom.
[化3]
作為對直接鍵結有4個-O-Si基且直接鍵結有4個上述-O-Si基中之4個氧原子之矽原子之個數之比例(Q4之個數之比例(%))進行測定的方法,例如可列舉:使用NMR光譜解析裝置,將Q4(直接鍵結有4個-O-Si基且直接鍵結有4個上述-O-Si基中之4個氧原子之矽原子)之峰面積、與Q1~Q3(直接鍵結有1~3個-O-Si基且直接鍵結有1~3個上述-O-Si基中之1~3個氧原子之矽原子)之峰面積進行比較之方法。藉由該方法,可求出上述無機殼所含有之矽原子之總個數100%中,直接鍵結有4個-O-Si基且直接鍵結有4個上述-O-Si基中之4個氧原子之矽原子之個數的比例(Q4之個數之比例)。 The ratio of the number of Q atoms (4%) to the number of deuterium atoms having 4 -O-Si groups directly bonded to 4 of the above -O-Si groups The method for performing the measurement includes, for example, using Q4 (directly bonded to four -O-Si groups and directly bonded to four of the four -O-Si groups) using an NMR spectrum analyzer. The peak area of the ruthenium atom is the same as Q1~Q3 (1~3 -O-Si groups are directly bonded and 1~3 oxygen atoms in the above -O-Si group are directly bonded) The method of comparing the peak areas of atoms. By this method, it is found that 100% of the total number of germanium atoms contained in the inorganic shell is directly bonded to four -O-Si groups and directly bonded to four of the above -O-Si groups. The ratio of the number of 矽 atoms of the four oxygen atoms (the ratio of the number of Q4).
上述殼之厚度較佳為100nm以上,更佳為200nm以上,且較佳為5μm以下,更佳為3μm以下。若上述殼之厚度為上述下限以上及上述上限以下,則10%K值及30%K值顯示進一步較佳之值,而可較佳地將基材粒子用於導電性粒子之用途。上述殼之厚度係基材粒子每個之平均厚度。可藉由控制溶膠凝膠法而控制上述殼之厚度。 The thickness of the above shell is preferably 100 nm or more, more preferably 200 nm or more, and is preferably 5 μm or less, more preferably 3 μm or less. When the thickness of the shell is not less than the above lower limit and not more than the above upper limit, the 10% K value and the 30% K value show further preferable values, and the substrate particles can be preferably used for the use of the conductive particles. The thickness of the above shell is the average thickness of each of the substrate particles. The thickness of the above shell can be controlled by controlling the sol-gel method.
於本發明中,殼之厚度可自基材粒子之粒徑與核粒徑之平均值的差而求出。上述基材粒子之粒徑於上述基材粒子為真球狀之情形時意指直徑,於上述基材粒子為真球狀以外之形狀之情形時,意指假定相當於其體積之真球時之直徑。於粒徑之測定中,例如可應用使用雷射光散射、電阻值變化、拍攝後之圖像解析等原理之粒度分佈測定 機。 In the present invention, the thickness of the shell can be determined from the difference between the particle diameter of the substrate particles and the average value of the core particle diameter. The particle diameter of the substrate particles means a diameter when the substrate particles are in a true spherical shape, and when the substrate particles have a shape other than a true spherical shape, it means assuming a true ball equivalent to the volume thereof. The diameter. In the measurement of the particle size, for example, particle size distribution measurement using the principles of laser light scattering, resistance value change, and image analysis after photographing can be applied. machine.
上述基材粒子之縱橫比較佳為2以下,更佳為1.5以下,進而較佳為1.2以下。上述縱橫比係表示長徑/短徑。 The aspect ratio of the substrate particles is preferably 2 or less, more preferably 1.5 or less, still more preferably 1.2 or less. The above aspect ratio means long diameter/short diameter.
上述導電性粒子具備上述之基材粒子、與配置於該基材粒子之表面上之導電層。 The conductive particles include the above-described substrate particles and a conductive layer disposed on the surface of the substrate particles.
於圖1中以剖面圖表示本發明之第1實施形態之導電性粒子。 The conductive particles according to the first embodiment of the present invention are shown in cross section in Fig. 1 .
圖1所示之導電性粒子1具有基材粒子11、與配置於基材粒子11之表面上之導電層2。導電層2被覆基材粒子11之表面。導電性粒子1係基材粒子11之表面由導電層2被覆之被覆粒子。 The conductive particles 1 shown in FIG. 1 have substrate particles 11 and a conductive layer 2 disposed on the surface of the substrate particles 11. The conductive layer 2 covers the surface of the substrate particles 11. The conductive particles 1 are coated particles in which the surface of the substrate particles 11 is covered with the conductive layer 2 .
基材粒子11具備核12、與配置於核12之表面上之殼13。殼13被覆核12之表面。導電層2係配置於殼13之表面上。導電層2係被覆殼13之表面。 The substrate particles 11 include a core 12 and a shell 13 disposed on the surface of the core 12 . The shell 13 is coated with the surface of the core 12. The conductive layer 2 is disposed on the surface of the case 13. The conductive layer 2 is the surface of the covering case 13.
於圖2中以剖面圖表示本發明之第2實施形態之導電性粒子。 The conductive particles of the second embodiment of the present invention are shown in cross section in Fig. 2 .
圖2所示之導電性粒子21具有基材粒子11、與配置於基材粒子11之表面上之導電層22。導電層22具有作為內層之第1導電層22A與作為外層之第2導電層22B。於基材粒子11之表面上配置有第1導電層22A。於殼13之表面上配置有第1導電層22A。於第1導電層22A之表面上配置有第2導電層22B。 The conductive particles 21 shown in FIG. 2 have substrate particles 11 and a conductive layer 22 disposed on the surface of the substrate particles 11. The conductive layer 22 has a first conductive layer 22A as an inner layer and a second conductive layer 22B as an outer layer. The first conductive layer 22A is disposed on the surface of the substrate particle 11. The first conductive layer 22A is disposed on the surface of the case 13. The second conductive layer 22B is disposed on the surface of the first conductive layer 22A.
於圖3中以剖面圖表示本發明之第3實施形態之導電性粒子。 Fig. 3 is a cross-sectional view showing conductive particles according to a third embodiment of the present invention.
圖3所示之導電性粒子31具有基材粒子11、導電層32、複數個芯物質33、及複數個絕緣性物質34。 The conductive particles 31 shown in FIG. 3 have a substrate particle 11, a conductive layer 32, a plurality of core materials 33, and a plurality of insulating materials 34.
導電層32係配置於基材粒子11之表面上。於殼13之表面上配置有導電層32。 The conductive layer 32 is disposed on the surface of the substrate particles 11. A conductive layer 32 is disposed on the surface of the shell 13.
導電性粒子31係於導電性之表面具有複數個突起31a。導電層32係於外表面具有複數個突起32a。如上所述,上述導電性粒子可於導 電性之表面具有突起,亦可於導電層之外表面具有突起。於基材粒子11之表面上配置有複數個芯物質33。於殼13之表面上配置有複數個芯物質33。複數個芯物質33係被嵌入導電層32內。芯物質33係配置於突起31a、32a之內側。導電層32被覆複數個芯物質33。由於複數個芯物質33而使導電層32之外表面隆起,而形成有突起31a、32a。 The conductive particles 31 have a plurality of protrusions 31a on the surface of the conductivity. The conductive layer 32 has a plurality of protrusions 32a on the outer surface. As described above, the above conductive particles can be guided The electrically conductive surface has protrusions and may also have protrusions on the outer surface of the conductive layer. A plurality of core materials 33 are disposed on the surface of the substrate particles 11. A plurality of core materials 33 are disposed on the surface of the shell 13. A plurality of core materials 33 are embedded in the conductive layer 32. The core material 33 is disposed inside the protrusions 31a and 32a. The conductive layer 32 is coated with a plurality of core materials 33. The outer surfaces of the conductive layer 32 are embossed by the plurality of core materials 33, and the projections 31a, 32a are formed.
導電性粒子31具有配置於導電層32之外表面上之絕緣性物質34。導電層32之外表面之至少一部分區域由絕緣性物質34被覆。絕緣性物質34係由具有絕緣性之材料形成,且為絕緣性粒子。如上所述,上述導電性粒子亦可具有配置於導電層之外表面上之絕緣性物質。 The conductive particles 31 have an insulating material 34 disposed on the outer surface of the conductive layer 32. At least a portion of the outer surface of the conductive layer 32 is covered with an insulating material 34. The insulating material 34 is formed of an insulating material and is an insulating particle. As described above, the conductive particles may have an insulating material disposed on the outer surface of the conductive layer.
用以形成上述導電層之金屬並無特別限定。作為該金屬,例如可列舉:金、銀、鈀、銅、鉑、鋅、鉄、錫、鉛、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鉈、鍺、鎘、矽及該等之合金等。又,作為上述金屬,可列舉:摻錫氧化銦(ITO)及焊錫等。其中,由於可使電極間之連接電阻進一步變低,故較佳為含有錫之合金、鎳、鈀、銅或金,較佳為鎳或鈀。 The metal for forming the above conductive layer is not particularly limited. Examples of the metal include gold, silver, palladium, copper, platinum, zinc, antimony, tin, lead, aluminum, cobalt, indium, nickel, chromium, titanium, ruthenium, osmium, iridium, osmium, cadmium, and antimony. Such alloys and the like. Further, examples of the metal include tin-doped indium oxide (ITO), solder, and the like. Among them, since the connection resistance between the electrodes can be further lowered, an alloy containing tin, nickel, palladium, copper or gold is preferable, and nickel or palladium is preferable.
可如導電性粒子1、31般,上述導電層由1層形成。亦可如導電性粒子21般,導電層由複數層形成。即,導電層亦可具有2層以上之積層結構。於導電層由複數層形成之情形時,最外層較佳為金層、鎳層、鈀層、銅層或含有錫與銀之合金層,更佳為金層。於最外層為該等較佳之導電層之情形時,電極間之連接電阻進一步變低。又,於最外層為金層之情形時,耐腐蝕性進一步變高。 The conductive layer may be formed of one layer as in the case of the conductive particles 1 and 31. The conductive layer may be formed of a plurality of layers as in the case of the conductive particles 21. That is, the conductive layer may have a laminated structure of two or more layers. In the case where the conductive layer is formed of a plurality of layers, the outermost layer is preferably a gold layer, a nickel layer, a palladium layer, a copper layer or an alloy layer containing tin and silver, more preferably a gold layer. In the case where the outermost layer is such a preferred conductive layer, the connection resistance between the electrodes is further lowered. Further, when the outermost layer is a gold layer, the corrosion resistance is further increased.
於上述基材粒子之表面上形成導電層之方法並無特別限定。作為形成導電層之方法,例如可列舉:利用無電電鍍之方法、利用電鍍之方法、利用物理蒸鍍之方法、以及將金屬粉末或包含金屬粉末與黏合劑之膏塗佈於基材粒子之表面之方法等。其中,利用無電電鍍之方法因導電層之形成簡便,故而較佳。作為上述利用物理蒸鍍之方法, 可列舉:真空蒸鍍、離子鍍著及離子濺鍍等方法。 A method of forming a conductive layer on the surface of the substrate particles is not particularly limited. Examples of the method of forming the conductive layer include a method using electroless plating, a method using electroplating, a method using physical vapor deposition, and a method of applying a metal powder or a paste containing a metal powder and a binder to a surface of a substrate particle. Method and so on. Among them, the method of electroless plating is preferred because the formation of the conductive layer is simple. As the above method using physical vapor deposition, Examples thereof include vacuum vapor deposition, ion plating, and ion sputtering.
上述導電性粒子之粒徑較佳為0.5μm以上,更佳為1μm以上,且較佳為520μm以下,更佳為500μm以下,進而較佳為100μm以下,進而更佳為50μm以下,特佳為20μm以下。若導電性粒子之粒徑為上述下限以上及上述上限以下,則於使用導電性粒子而將電極間連接之情形時,導電性粒子與電極之接觸面積充分變大,且於形成導電層時變得難以形成凝集之導電性粒子。又,經由導電性粒子連接之電極間之間隔不會變得過大,且導電層變得難以自基材粒子之表面剝離。又,若導電性粒子之粒徑為上述下限以上及上述上限以下,則可較佳地將導電性粒子用於導電材料之用途。 The particle diameter of the conductive particles is preferably 0.5 μm or more, more preferably 1 μm or more, and is preferably 520 μm or less, more preferably 500 μm or less, further preferably 100 μm or less, and still more preferably 50 μm or less, particularly preferably 20 μm or less. When the particle diameter of the conductive particles is not less than the above lower limit and not more than the above upper limit, when the electrodes are connected by using the conductive particles, the contact area between the conductive particles and the electrode is sufficiently increased, and the conductive layer is changed. It is difficult to form agglomerated conductive particles. Moreover, the interval between the electrodes connected via the conductive particles does not become excessively large, and the conductive layer becomes difficult to peel off from the surface of the substrate particles. Further, when the particle diameter of the conductive particles is not less than the above lower limit and not more than the above upper limit, the conductive particles can be preferably used for the use of the conductive material.
上述導電性粒子之粒徑於導電性粒子為真球狀之情形時意指直徑,於導電性粒子為真球狀以外之形狀之情形時,意指假定相當於其體積之真球時之直徑。 The particle diameter of the conductive particles means a diameter when the conductive particles are in a true spherical shape, and when the conductive particles are in a shape other than a true spherical shape, it means a diameter assuming a true ball corresponding to the volume thereof. .
上述導電層之厚度較佳為0.005μm以上,更佳為0.01μm以上,且較佳為10μm以下,更佳為1μm以下,進而較佳為0.3μm以下。上述導電層之厚度於導電層為多層之情形時,係導電層整體之厚度。若導電層之厚度為上述下限以上及上述上限以下,則獲得充分之導電性,且導電性粒子不會變得過硬,而於連接電極間時導電性粒子充分變形。 The thickness of the conductive layer is preferably 0.005 μm or more, more preferably 0.01 μm or more, and is preferably 10 μm or less, more preferably 1 μm or less, still more preferably 0.3 μm or less. The thickness of the conductive layer is the thickness of the entire conductive layer when the conductive layer is a plurality of layers. When the thickness of the conductive layer is not less than the above lower limit and not more than the above upper limit, sufficient conductivity is obtained, and the conductive particles are not excessively hard, and the conductive particles are sufficiently deformed when the electrodes are connected.
於上述導電層由複數層形成之情形時,最外層之導電層之厚度較佳為0.001μm以上,更佳為0.01μm以上,且較佳為0.5μm以下,更佳為0.1μm以下。若上述最外層之導電層之厚度為上述下限以上及上述上限以下,則利用最外層之導電層之被覆變均勻,而耐腐蝕性充分變高,且電極間之連接電阻進一步變低。又,於上述最外層為金層之情形時,金層之厚度越薄,成本越低。 When the conductive layer is formed of a plurality of layers, the thickness of the outermost conductive layer is preferably 0.001 μm or more, more preferably 0.01 μm or more, and is preferably 0.5 μm or less, more preferably 0.1 μm or less. When the thickness of the outermost conductive layer is not less than the above lower limit and not more than the above upper limit, the coating of the outermost conductive layer becomes uniform, and the corrosion resistance is sufficiently high, and the connection resistance between the electrodes is further lowered. Further, in the case where the outermost layer is a gold layer, the thinner the thickness of the gold layer, the lower the cost.
上述導電層之厚度例如可藉由使用透過型電子顯微鏡(TEM),觀 察導電性粒子之剖面而測定。 The thickness of the above conductive layer can be observed, for example, by using a transmission electron microscope (TEM). The cross section of the conductive particles was measured and measured.
上述導電性粒子亦可於導電性之表面具有突起。上述導電性粒子亦可於上述導電層之外表面具有突起。該突起較佳為複數個。多數情況下,於導電層之表面以及由導電性粒子連接之電極之表面形成有氧化被膜。於使用具有突起之導電性粒子之情形時,於電極間配置導電性粒子並進行壓接,藉此藉由突起而有效地去除上述氧化被膜。因此,可使電極與導電性粒子之導電層進一步確實地接觸,而可使電極間之連接電阻降低。進而,於導電性粒子於表面具備絕緣性物質之情形時,或將導電性粒子分散於黏合劑樹脂中而用作導電材料之情形時,藉由導電性粒子之突起,可有效地去除導電性粒子與電極之間之絕緣性物質或黏合劑樹脂。因此,可提高電極間之導通可靠性。 The conductive particles may have protrusions on the surface of the conductivity. The conductive particles may have protrusions on the outer surface of the conductive layer. The protrusions are preferably plural. In many cases, an oxide film is formed on the surface of the conductive layer and the surface of the electrode to which the conductive particles are connected. When the conductive particles having protrusions are used, the conductive particles are placed between the electrodes and pressure-bonded, whereby the oxide film is effectively removed by the protrusions. Therefore, the electrode and the conductive layer of the conductive particles can be further reliably contacted, and the connection resistance between the electrodes can be lowered. Further, when the conductive particles have an insulating material on the surface or when the conductive particles are dispersed in the binder resin and used as a conductive material, the conductive particles can be effectively removed by the protrusions of the conductive particles. An insulating substance or a binder resin between the particles and the electrode. Therefore, the conduction reliability between the electrodes can be improved.
作為於上述導電性粒子之表面形成突起之方法,可列舉:使芯物質附著於基材粒子之表面後,藉由無電電鍍而形成導電層之方法;以及於基材粒子之表面藉由無電電鍍而形成導電層後,使芯物質附著,進而藉由無電電鍍而形成導電層之方法等。又,為了形成突起,亦可不使用上述芯物質。 The method of forming a protrusion on the surface of the conductive particle includes a method of forming a conductive layer by electroless plating after attaching a core substance to a surface of a substrate particle, and electroless plating on a surface of the substrate particle. After the conductive layer is formed, a core material is adhered, and a conductive layer is formed by electroless plating. Moreover, in order to form a protrusion, the above-mentioned core substance may not be used.
上述導電性粒子亦可具備配置於上述導電層之外表面上之絕緣性物質。於該情形時,若將導電性粒子用於電極間之連接,則可防止鄰接之電極間之短路。具體而言,於複數個導電性粒子接觸時,於複數個電極間存在絕緣性物質,因此可防止於橫方向鄰接之電極間之短路,而並非上下電極間之短路。再者,於連接電極間時,利用2個電極對導電性粒子進行加壓,藉此可容易地去除導電性粒子之導電層與電極之間之絕緣性物質。於導電性粒子於上述導電層之表面具有突起之情形時,可進一步容易地去除導電性粒子之導電層與電極之間之絕緣性物質。上述絕緣性物質較佳為絕緣性樹脂層或絕緣性粒子,更佳為絕緣性粒子。上述絕緣性粒子較佳為絕緣性樹脂粒子。 The conductive particles may further include an insulating material disposed on the outer surface of the conductive layer. In this case, when the conductive particles are used for the connection between the electrodes, the short circuit between the adjacent electrodes can be prevented. Specifically, when a plurality of conductive particles are in contact with each other, an insulating material is present between the plurality of electrodes. Therefore, it is possible to prevent short-circuiting between the electrodes adjacent in the lateral direction, and is not a short circuit between the upper and lower electrodes. Further, when the electrodes are connected, the conductive particles are pressurized by the two electrodes, whereby the insulating material between the conductive layers of the conductive particles and the electrodes can be easily removed. When the conductive particles have protrusions on the surface of the conductive layer, the insulating material between the conductive layer of the conductive particles and the electrode can be further easily removed. The insulating material is preferably an insulating resin layer or insulating particles, and more preferably insulating particles. The insulating particles are preferably insulating resin particles.
上述導電材料含有上述之導電性粒子、與黏合劑樹脂。上述導電性粒子較佳為分散於黏合劑樹脂中而用作導電材料。上述導電材料較佳為各向異性導電材料。上述導電材料可較佳地用於電極之電性連接。上述導電材料較佳為電路連接材料。 The conductive material contains the above-mentioned conductive particles and a binder resin. The conductive particles are preferably dispersed in a binder resin and used as a conductive material. The above conductive material is preferably an anisotropic conductive material. The above conductive material can be preferably used for electrical connection of electrodes. The above conductive material is preferably a circuit connecting material.
上述黏合劑樹脂並無特別限定。可使用公知之絕緣性之樹脂作為上述黏合劑樹脂。作為上述黏合劑樹脂,例如可列舉:乙烯基樹脂、熱塑性樹脂、硬化性樹脂、熱塑性嵌段共聚物及彈性體等。上述黏合劑樹脂可僅使用1種,亦可併用2種以上。 The above binder resin is not particularly limited. As the above-mentioned binder resin, a known insulating resin can be used. Examples of the binder resin include a vinyl resin, a thermoplastic resin, a curable resin, a thermoplastic block copolymer, and an elastomer. The binder resin may be used alone or in combination of two or more.
作為上述乙烯基樹脂,例如可列舉:乙酸乙烯酯樹脂、丙烯酸系樹脂及苯乙烯樹脂等。作為上述熱塑性樹脂,例如可列舉:聚烯烴樹脂、乙烯-乙酸乙烯酯共聚物及聚醯胺樹脂等。作為上述硬化性樹脂,例如可列舉:環氧樹脂、胺基甲酸酯樹脂、聚醯亞胺樹脂及不飽和聚酯樹脂等。再者,上述硬化性樹脂亦可為常溫硬化型樹脂、熱硬化型樹脂、光硬化型樹脂或濕氣硬化型樹脂。上述硬化性樹脂亦可與硬化劑併用。作為上述熱塑性嵌段共聚物,例如可列舉:苯乙烯-丁二烯-苯乙烯嵌段共聚物、苯乙烯-異戊二烯-苯乙烯嵌段共聚物、苯乙烯-丁二烯-苯乙烯嵌段共聚物之氫化物、及苯乙烯-異戊二烯-苯乙烯嵌段共聚物之氫化物等。作為上述彈性體,例如可列舉:苯乙烯-丁二烯共聚合橡膠、及丙烯腈-苯乙烯嵌段共聚合橡膠等。 Examples of the vinyl resin include a vinyl acetate resin, an acrylic resin, and a styrene resin. Examples of the thermoplastic resin include a polyolefin resin, an ethylene-vinyl acetate copolymer, and a polyamide resin. Examples of the curable resin include an epoxy resin, a urethane resin, a polyimide resin, and an unsaturated polyester resin. Further, the curable resin may be a room temperature curing resin, a thermosetting resin, a photocurable resin or a moisture curing resin. The curable resin may be used in combination with a curing agent. Examples of the above thermoplastic block copolymer include a styrene-butadiene-styrene block copolymer, a styrene-isoprene-styrene block copolymer, and a styrene-butadiene-styrene. a hydride of a block copolymer, a hydride of a styrene-isoprene-styrene block copolymer, and the like. Examples of the elastomer include a styrene-butadiene copolymer rubber and an acrylonitrile-styrene block copolymer rubber.
上述導電材料除含有上述導電性粒子及上述黏合劑樹脂外,例如亦可含有填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑及阻燃劑等各種添加劑。 The conductive material may contain, in addition to the conductive particles and the binder resin, a filler, a bulking agent, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, and a heat stabilizer. Various additives such as agents, light stabilizers, ultraviolet absorbers, lubricants, antistatic agents and flame retardants.
使上述導電性粒子分散於上述黏合劑樹脂中之方法可使用先前公知之分散方法,並無特別限定。作為使上述導電性粒子分散於上述 黏合劑樹脂中之方法,例如可列舉:於上述黏合劑樹脂中添加上述導電性粒子後,利用行星式混合機等進行混練而使之分散的方法;使用均質器等使上述導電性粒子均勻地分散於水或有機溶劑中後,添加於上述黏合劑樹脂中,利用行星式混合機等進行混練而使之分散的方法;以及利用水或有機溶劑等稀釋上述黏合劑樹脂後,添加上述導電性粒子,利用行星式混合機等進行混練而使之分散的方法等。 The method of dispersing the above-mentioned conductive particles in the above-mentioned binder resin can be a conventionally known dispersion method, and is not particularly limited. Dispersing the above conductive particles in the above For the method of the binder resin, for example, a method in which the conductive particles are added to the binder resin and then kneaded by a planetary mixer or the like is dispersed, and the conductive particles are uniformly used by using a homogenizer or the like. After being dispersed in water or an organic solvent, it is added to the above-mentioned binder resin, and is kneaded by a planetary mixer or the like to be dispersed, and the above-mentioned binder resin is diluted with water or an organic solvent to add the above conductivity. A method in which particles are kneaded by a planetary mixer or the like and dispersed.
上述導電材料可用作導電膏及導電膜等。於本發明之導電材料為導電膜之情形時,亦可於該含有導電性粒子之導電膜上積層不含導電性粒子之膜。上述導電膏較佳為各向異性導電膏。上述導電膜較佳為各向異性導電膜。 The above conductive material can be used as a conductive paste, a conductive film, or the like. When the conductive material of the present invention is a conductive film, a film containing no conductive particles may be laminated on the conductive film containing the conductive particles. The above conductive paste is preferably an anisotropic conductive paste. The above conductive film is preferably an anisotropic conductive film.
上述導電材料100重量%中,上述黏合劑樹脂之含量較佳為10重量%以上,更佳為30重量%以上,進而較佳為50重量%以上,特佳為70重量%以上,且較佳為99.99重量%以下,更佳為99.9重量%以下。若上述黏合劑樹脂之含量為上述下限以上及上述上限以下,則於電極間有效率地配置導電性粒子,而由導電材料連接之連接對象構件之連接可靠性進一步變高。 The content of the binder resin is preferably 10% by weight or more, more preferably 30% by weight or more, still more preferably 50% by weight or more, particularly preferably 70% by weight or more, and more preferably 100% by weight of the conductive material. It is 99.99% by weight or less, more preferably 99.9% by weight or less. When the content of the binder resin is not less than the above lower limit and not more than the above upper limit, the conductive particles are efficiently disposed between the electrodes, and the connection reliability of the member to be joined connected by the conductive material is further increased.
上述導電材料100重量%中,上述導電性粒子之含量較佳為0.01重量%以上,更佳為0.1重量%以上,且較佳為40重量%以下,更佳為20重量%以下,進而較佳為10重量%以下。若上述導電性粒子之含量為上述下限以上及上述上限以下,則電極間之導通可靠性進一步變高。 The content of the conductive particles in 100% by weight of the conductive material is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, and is preferably 40% by weight or less, more preferably 20% by weight or less, and further preferably It is 10% by weight or less. When the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the conduction reliability between the electrodes is further increased.
使用上述之導電性粒子或使用含有上述之導電性粒子與黏合劑樹脂之導電材料,將連接對象構件進行連接,藉此可獲得連接構造體。 The connection structure is obtained by using the above-described conductive particles or a conductive material containing the above-described conductive particles and a binder resin, whereby a connection structure can be obtained.
上述連接構造體較佳為具備第1連接對象構件、第2連接對象構 件、及將第1連接對象構件與第2連接對象構件連接之連接部,且該連接部由上述之導電性粒子形成,或者由含有上述之導電性粒子與黏合劑樹脂之導電材料形成。於單獨使用導電性粒子之情形時,連接部本身為導電性粒子。即,第1、第2連接對象構件由導電性粒子連接。用以獲得上述連接構造體之上述導電材料較佳為各向異性導電材料。 Preferably, the connection structure includes a first connection target member and a second connection object structure. And a connecting portion that connects the first connection target member and the second connection target member, and the connection portion is formed of the conductive particles described above or a conductive material containing the conductive particles and the binder resin. In the case where the conductive particles are used alone, the connecting portion itself is a conductive particle. In other words, the first and second connection target members are connected by conductive particles. The above conductive material for obtaining the above-mentioned connection structure is preferably an anisotropic conductive material.
上述第1連接對象構件較佳為於表面具有第1電極。上述第2連接對象構件較佳為於表面具有第2電極。較佳為上述第1電極與上述第2電極由上述導電性粒子而電性連接。 Preferably, the first connection target member has a first electrode on the surface. Preferably, the second connection target member has a second electrode on the surface. Preferably, the first electrode and the second electrode are electrically connected by the conductive particles.
圖4係模式性地表示使用有圖1所示之導電性粒子1之連接構造體的前視剖面圖。 Fig. 4 is a front cross-sectional view schematically showing a connection structure using the conductive particles 1 shown in Fig. 1 .
圖4所示之連接構造體51具備第1連接對象構件52、第2連接對象構件53、及將第1連接對象構件52與第2連接對象構件53連接之連接部54。連接部54係由含有導電性粒子1與黏合劑樹脂之導電材料形成。圖4中,導電性粒子1係為了圖示之方便而簡略地表示。除導電性粒子1外,亦可使用導電性粒子21、31等其他導電性粒子。 The connection structure body 51 shown in FIG. 4 includes the first connection object member 52, the second connection object member 53, and the connection portion 54 that connects the first connection object member 52 and the second connection object member 53. The connecting portion 54 is formed of a conductive material containing the conductive particles 1 and a binder resin. In Fig. 4, the conductive particles 1 are simply shown for convenience of illustration. In addition to the conductive particles 1, other conductive particles such as conductive particles 21 and 31 may be used.
第1連接對象構件52於表面(上表面)具有複數個第1電極52a。第2連接對象構件53於表面(下表面)具有複數個第2電極53a。第1電極52a與第2電極53a由1個或複數個導電性粒子1電性連接。因此,第1、第2連接對象構件52、53由導電性粒子1電性連接。 The first connection target member 52 has a plurality of first electrodes 52a on the front surface (upper surface). The second connection target member 53 has a plurality of second electrodes 53a on the front surface (lower surface). The first electrode 52a and the second electrode 53a are electrically connected to one or a plurality of conductive particles 1. Therefore, the first and second connection object members 52 and 53 are electrically connected by the conductive particles 1 .
上述連接構造體之製造方法並無特別限定。作為連接構造體之製造方法之一例,可列舉:於第1連接對象構件與第2連接對象構件之間配置上述導電材料而獲得積層體後,對該積層體進行加熱及加壓之方法等。上述加壓之壓力為9.8×104~4.9×106Pa左右。上述加熱之溫度為120~220℃左右。用以連接軟性印刷基板之電極、配置於樹脂膜上之電極及觸控面板之電極的上述加壓之壓力為9.8×104~1.0×106Pa左右。 The method for producing the above-described connection structure is not particularly limited. An example of the method of manufacturing the connection structure is a method in which the conductive material is placed between the first connection target member and the second connection target member to obtain a laminate, and the laminate is heated and pressurized. The pressure of the above pressurization is about 9.8 × 10 4 to 4.9 × 10 6 Pa. The heating temperature is about 120 to 220 °C. The pressure of the pressurization of the electrode for connecting the flexible printed circuit board, the electrode disposed on the resin film, and the electrode of the touch panel is about 9.8×10 4 to 1.0×10 6 Pa.
作為上述連接對象構件,具體而言,可列舉:半導體晶片、電容器及二極體等電子零件、以及印刷基板、軟性印刷基板、環氧玻璃基板及玻璃基板等電路基板等電子零件等。上述導電材料較佳為用以連接電子零件之導電材料。上述導電膏較佳為膏狀之導電材料,且以膏狀之狀態塗佈於連接對象構件上。 Specific examples of the connection target member include electronic components such as a semiconductor wafer, a capacitor, and a diode, and electronic components such as a printed circuit board, a flexible printed circuit board, a glass substrate such as a glass substrate, and a glass substrate. The conductive material is preferably a conductive material for connecting electronic components. The conductive paste is preferably a paste-like conductive material and is applied to the member to be joined in a paste state.
上述導電性粒子及上述導電材料亦可較佳地用於觸控面板。因此,上述連接對象構件亦較佳為軟性印刷基板、或於樹脂膜之表面上配置有電極之連接對象構件。上述連接對象構件較佳為軟性印刷基板,且較佳為於樹脂膜之表面上配置有電極之連接對象構件。上述軟性印刷基板通常於表面具有電極。 The conductive particles and the conductive material described above can also be preferably used for a touch panel. Therefore, the connection target member is preferably a flexible printed circuit board or a connection target member in which an electrode is disposed on the surface of the resin film. The connection target member is preferably a flexible printed circuit board, and is preferably a connection target member in which an electrode is disposed on the surface of the resin film. The above flexible printed substrate usually has electrodes on its surface.
尤其是於本發明中,為了抑制導電性粒子對基板等連接對象構件之損傷,而將基材粒子之初期硬度設計為適當範圍。因此,於本發明中,於電極之表面為鈦或鉬等容易氧化之金屬之情形、或者將厚度相對較薄之玻璃基板(厚度0.2mm左右)與半導體晶片連接,或將軟性印刷基板與半導體晶片連接之情形時,發揮較大之效果。 In particular, in the present invention, in order to suppress damage of the conductive particles to the member to be bonded such as the substrate, the initial hardness of the substrate particles is designed to be in an appropriate range. Therefore, in the present invention, the surface of the electrode is a metal which is easily oxidized such as titanium or molybdenum, or a glass substrate (having a thickness of about 0.2 mm) having a relatively small thickness is connected to the semiconductor wafer, or the flexible printed substrate and the semiconductor are bonded. When the wafer is connected, it exerts a large effect.
上述第1、第2連接對象構件之組合較佳為玻璃基板或軟性印刷基板與半導體晶片之組合,較佳為玻璃基板與半導體晶片之組合,亦較佳為軟性印刷基板與半導體晶片之組合。於該情形時,上述第1連接對象構件亦可為玻璃基板或軟性印刷基板,上述第2連接對象構件亦可為玻璃基板或軟性印刷基板。上述玻璃基板之厚度為0.05mm以上且未達0.5mm。 The combination of the first and second connection members is preferably a combination of a glass substrate or a flexible printed substrate and a semiconductor wafer, preferably a combination of a glass substrate and a semiconductor wafer, and is preferably a combination of a flexible printed substrate and a semiconductor wafer. In this case, the first connection member may be a glass substrate or a flexible printed substrate, and the second connection member may be a glass substrate or a flexible printed substrate. The thickness of the glass substrate is 0.05 mm or more and less than 0.5 mm.
作為設置於上述連接對象構件之電極,可列舉:金電極、鎳電極、錫電極、鋁電極、銅電極、鉬電極及鎢電極、鈦電極等金屬電極。於上述連接對象構件為軟性印刷基板之情形時,上述電極較佳為金電極、鎳電極、錫電極或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極較佳為鋁電極、銅電極、鉬電極或鎢電極。再 者,於上述電極為鋁電極之情形時,可為僅由鋁形成之電極,亦可為於金屬氧化物層之表面積層鋁層而成之電極。作為上述金屬氧化物層之材料,可列舉摻雜有3價之金屬元素之氧化銦及摻雜有3價之金屬元素之氧化鋅等。作為上述3價之金屬元素,可列舉:Sn、Al及Ga等。 Examples of the electrode provided in the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a tungsten electrode, and a titanium electrode. In the case where the connection target member is a flexible printed circuit board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode or a copper electrode. In the case where the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode or a tungsten electrode. again When the electrode is an aluminum electrode, the electrode may be an electrode formed only of aluminum, or may be an electrode formed on a surface layer of a metal oxide layer. Examples of the material of the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, Ga, and the like.
較佳為上述第1、第2電極中之至少一者為鈦電極或鉬電極,較佳為上述第1、第2電極中之兩者為鈦電極或鉬電極。較佳為構成上述第1、第2電極之表面之材料中之至少一者含有鈦或鉬,更佳為構成上述第1、第2電極之表面之材料之兩者含有鈦或鉬。 Preferably, at least one of the first and second electrodes is a titanium electrode or a molybdenum electrode, and preferably both of the first and second electrodes are titanium electrodes or molybdenum electrodes. It is preferable that at least one of the materials constituting the surfaces of the first and second electrodes contains titanium or molybdenum, and it is more preferable that both of the materials constituting the surfaces of the first and second electrodes contain titanium or molybdenum.
以下,列舉實施例及比較例對本發明具體地進行說明。本發明並不僅限於以下之實施例。 Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples.
(1)基材粒子製作 (1) Fabrication of substrate particles
核之製作) Nuclear production)
將1,4-丁二醇二丙烯酸酯950重量份、與乙二醇二甲基丙烯酸脂50重量份進行混合而獲得混合液。於獲得之混合液中加入過氧化苯甲醯20重量份,進行攪拌直至均勻地溶解,而獲得單體混合液。將於純水中溶解有分子量約1700之聚乙烯醇之2重量%水溶液4000重量份加入反應釜。於其中加入獲得之單體混合液,進行4小時攪拌,藉此以單體之液滴成為特定之粒徑之方式調整粒徑。其後,於85℃之氮氣環境下進行反應9小時,進行單體液滴之聚合反應,而獲得粒子。利用熱水將獲得之粒子洗淨數次後,進行分級操作,回收數種類之粒徑不同之聚合物粒子(有機核)。 950 parts by weight of 1,4-butanediol diacrylate and 50 parts by weight of ethylene glycol dimethacrylate were mixed to obtain a mixed liquid. 20 parts by weight of benzamidine peroxide was added to the obtained mixed solution, and the mixture was stirred until homogeneously dissolved to obtain a monomer mixture. 4000 parts by weight of a 2% by weight aqueous solution of polyvinyl alcohol having a molecular weight of about 1700 dissolved in pure water was placed in the reaction vessel. The obtained monomer mixture liquid was added thereto, and stirred for 4 hours, whereby the particle diameter was adjusted so that the droplets of the monomer became a specific particle diameter. Thereafter, the reaction was carried out for 9 hours under a nitrogen atmosphere at 85 ° C to carry out polymerization of monomer droplets to obtain particles. The obtained particles are washed several times with hot water, and then subjected to a classification operation to recover a plurality of polymer particles (organic cores) having different particle diameters.
準備於實施例1中利用分級操作回收之聚合物粒子中,粒徑為2.49μm之聚合物粒子(有機核)。 Among the polymer particles recovered by the classification operation in Example 1, polymer particles (organic core) having a particle diameter of 2.49 μm were prepared.
核殼粒子之製作) Production of core-shell particles)
將獲得之聚合物粒子(有機核)30重量份、作為界面活性劑之十六 烷基溴化銨12重量份、及25重量%之氨水溶液24重量份加入異丙醇540重量份及純水60重量份中,進行混合而獲得聚合物粒子之分散液。於該分散液中添加四乙氧基矽烷140重量份,進行利用溶膠凝膠反應之縮合反應。使四乙氧基矽烷之縮合物於聚合物粒子之表面析出,形成殼而獲得粒子。利用乙醇將獲得之粒子洗淨數次,進行乾燥,藉此獲得核殼粒子(基材粒子)。獲得之核殼粒子之粒徑為3.01μm。根據核之粒徑與核殼粒子之粒徑,算出殼之厚度為0.26μm。 30 parts by weight of the obtained polymer particles (organic core) as a surfactant 12 parts by weight of an alkylammonium bromide and 24 parts by weight of an aqueous ammonia solution of 25% by weight were added to 540 parts by weight of isopropyl alcohol and 60 parts by weight of pure water, and mixed to obtain a dispersion of polymer particles. 140 parts by weight of tetraethoxysilane was added to the dispersion to carry out a condensation reaction by a sol-gel reaction. The condensate of tetraethoxydecane is precipitated on the surface of the polymer particles to form a shell to obtain particles. The obtained particles were washed several times with ethanol and dried to obtain core-shell particles (substrate particles). The particle size of the obtained core-shell particles was 3.01 μm. The thickness of the shell was calculated to be 0.26 μm from the particle diameter of the core and the particle diameter of the core-shell particles.
(2)導電性粒子之製作 (2) Production of conductive particles
將獲得之基材粒子洗淨,進行乾燥。其後,藉由無電電鍍法,於獲得之基材粒子之表面形成鎳層,而製作導電性粒子。再者,鎳層之厚度為0.1μm。 The obtained substrate particles are washed and dried. Thereafter, a nickel layer was formed on the surface of the obtained substrate particles by an electroless plating method to prepare conductive particles. Further, the thickness of the nickel layer was 0.1 μm.
準備於實施例1中利用分級操作回收之聚合物粒子中,粒徑為2.25μm之聚合物粒子(有機核)。使用獲得之聚合物粒子,以及於製作核殼粒子時,將四乙氧基矽烷之添加量變更為310重量份,除此以外,以與實施例1相同之方式獲得核殼粒子及導電性粒子。 Among the polymer particles recovered by the classification operation in Example 1, polymer particles (organic core) having a particle diameter of 2.25 μm were prepared. The core-shell particles and the conductive particles were obtained in the same manner as in Example 1 except that the polymer particles obtained were used and the amount of the tetraethoxysilane was changed to 310 parts by weight in the production of the core-shell particles. .
於電爐中,於填充有氮氣之狀態下,將於實施例1中獲得之基材粒子以200℃進行30分鐘加熱處理。其後,利用與實施例1相同之處理而製作導電性粒子。 The substrate particles obtained in Example 1 were heat-treated at 200 ° C for 30 minutes in an electric furnace under nitrogen filling. Thereafter, conductive particles were produced by the same treatment as in Example 1.
(1)鈀附著步驟 (1) Palladium attachment step
準備於實施例1中獲得之基材粒子。將獲得之基材粒子進行蝕刻並進行水洗。繼而,於包含鈀觸媒8重量%之鈀觸媒化液100mL中添加基材粒子並進行攪拌。其後,進行過濾、洗淨。於pH值6之0.5重量%二甲胺硼烷液中添加基材粒子,而獲得附著有鈀之基材粒子。 The substrate particles obtained in Example 1 were prepared. The obtained substrate particles were etched and washed with water. Then, the substrate particles were added to 100 mL of a palladium catalyst solution containing 8 wt% of a palladium catalyst and stirred. Thereafter, it was filtered and washed. The substrate particles were added to a 0.5 wt% dimethylamine borane solution having a pH of 6, to obtain a substrate particle to which palladium adhered.
(2)芯物質附著步驟 (2) Core substance attachment step
將附著有鈀之基材粒子於離子交換水300mL中攪拌3分鐘,進行分散而獲得分散液。繼而,將金屬鎳粒子膏(平均粒徑100nm)1g歷時3分鐘添加於上述分散液中,而獲得附著有芯物質之基材粒子。 The substrate particles to which palladium adhered were stirred in 300 mL of ion-exchanged water for 3 minutes, and dispersed to obtain a dispersion. Then, 1 g of a metal nickel particle paste (average particle diameter: 100 nm) was added to the above dispersion liquid for 3 minutes to obtain a substrate particle to which a core substance adhered.
(3)無電鍍鎳步驟 (3) Electroless nickel plating step
以與實施例1相同之方式於基材粒子之表面上形成鎳層,而製作導電性粒子。再者,鎳層之厚度為0.1μm。 A nickel layer was formed on the surface of the substrate particles in the same manner as in Example 1 to prepare conductive particles. Further, the thickness of the nickel layer was 0.1 μm.
(1)絕緣性粒子之製作 (1) Production of insulating particles
向安裝有4口可分離式蓋、攪拌葉、三向旋塞、冷卻管及溫度探針之1000mL之可分離式燒瓶中,將含有甲基丙烯酸甲酯100mmol、N,N,N-三甲基-N-2-甲基丙烯醯氧基乙基氯化胺1mmol、及2,2'-偶氮雙(2-脒基丙烷)二鹽酸鹽1mmol之單體組合物以固形物成分率成為5重量%的方式稱取至離子交換水中後,以200rpm進行攪拌,於氮氣環境下以70℃進行聚合24小時。反應結束後,進行冷凍乾燥,而獲得於表面具有銨基、且平均粒徑220nm及CV值10%之絕緣性粒子。 To a 1000 mL separable flask equipped with four separable caps, stirring blades, three-way cocks, cooling tubes and temperature probes, 100 mmol of methyl methacrylate, N, N, N-trimethyl a monomer composition of 1 mmol of -N-2-methylpropenyloxyethylamine chloride and 1 mmol of 2,2'-azobis(2-amidinopropane) dihydrochloride was obtained as a solid component ratio After weighing into 5 parts by weight of the ion-exchanged water, the mixture was stirred at 200 rpm, and polymerization was carried out at 70 ° C for 24 hours under a nitrogen atmosphere. After completion of the reaction, lyophilization was carried out to obtain insulating particles having an ammonium group on the surface and having an average particle diameter of 220 nm and a CV value of 10%.
於超音波照射下使絕緣性粒子分散於離子交換水中,而獲得絕緣性粒子之10重量%水分散液。 The insulating particles were dispersed in ion-exchanged water under ultrasonic irradiation to obtain a 10% by weight aqueous dispersion of the insulating particles.
使於實施例1中獲得之導電性粒子10g分散於離子交換水500mL中,添加絕緣性粒子之水分散液4g,於室溫下攪拌6小時。利用3μm之篩網過濾器進行過濾後,進而利用甲醇進行清洗,進行乾燥而獲得附著有絕緣性粒子之導電性粒子。 10 g of the conductive particles obtained in Example 1 was dispersed in 500 mL of ion-exchanged water, 4 g of an aqueous dispersion of insulating particles was added, and the mixture was stirred at room temperature for 6 hours. After filtering by a 3 μm mesh filter, it was further washed with methanol and dried to obtain conductive particles to which insulating particles were attached.
利用掃描式電子顯微鏡(SEM)進行觀察,結果,於導電性粒子之表面僅形成有1層利用絕緣性粒子之被覆層。根據圖像解析,算出絕緣性粒子對於距導電性粒子中心2.5μm處之面積的被覆面積(即,絕緣性粒子之粒徑之投影面積),結果被覆率為30%。 Observation by a scanning electron microscope (SEM) revealed that only one coating layer using insulating particles was formed on the surface of the conductive particles. From the image analysis, the coverage area of the insulating particles with respect to the area of 2.5 μm from the center of the conductive particles (that is, the projected area of the particle diameter of the insulating particles) was calculated, and as a result, the coverage ratio was 30%.
準備於實施例1中利用分級操作回收之聚合物粒子中,粒徑為2.25μm之聚合物粒子(有機核)。使用獲得之聚合物粒子,以及於製作核殼粒子時,將甲醇540重量份變更為乙腈540重量份,以及將四乙氧基矽烷之添加量變更為310重量份,除此以外,以與實施例1相同之方式獲得核殼粒子及導電性粒子。 Among the polymer particles recovered by the classification operation in Example 1, polymer particles (organic core) having a particle diameter of 2.25 μm were prepared. When the obtained polymer particles and the core-shell particles were produced, 540 parts by weight of methanol was changed to 540 parts by weight of acetonitrile, and the amount of addition of tetraethoxysilane was changed to 310 parts by weight, and In the same manner as in Example 1, core-shell particles and conductive particles were obtained.
準備於實施例1中分級回收之聚合物粒子中,粒徑為2.75μm之聚合物粒子(有機核)。使用獲得之聚合物粒子,以及於製作核殼粒子時,將甲醇540重量份變更為乙腈540重量份,將四乙氧基矽烷之添加量變更為50重量份,除此以外,以與實施例1相同之方式獲得核殼粒子及導電性粒子。 Among the polymer particles fractionated and recovered in Example 1, polymer particles (organic core) having a particle diameter of 2.75 μm were prepared. When the obtained polymer particles and the core-shell particles were produced, 540 parts by weight of methanol was changed to 540 parts by weight of acetonitrile, and the amount of addition of tetraethoxysilane was changed to 50 parts by weight. In the same manner, core-shell particles and conductive particles were obtained.
準備於實施例1中利用分級操作回收之聚合物粒子中,粒徑為3.02μm之聚合物粒子。使用獲得之聚合物粒子作為基材粒子,以與實施例1相同之方式獲得導電性粒子。 Among the polymer particles recovered by the classification operation in Example 1, polymer particles having a particle diameter of 3.02 μm were prepared. Conductive particles were obtained in the same manner as in Example 1 using the obtained polymer particles as substrate particles.
於製作核時,將1,4-丁二醇二丙烯酸酯950重量份及乙二醇二甲基丙烯酸脂50重量份變更為二乙烯苯(純度96重量%)600重量份及丙烯酸異酯400重量份,除此以外,以與實施例1相同之方式獲得粒子。利用熱水將獲得之粒子洗淨數次後,進行分級操作,回收數種類之粒徑不同之聚合物粒子。 In the production of the core, 950 parts by weight of 1,4-butanediol diacrylate and 50 parts by weight of ethylene glycol dimethacrylate are changed to divinylbenzene (purity: 96% by weight), 600 parts by weight, and acrylic acid Particles were obtained in the same manner as in Example 1 except for 400 parts by weight of the ester. The obtained particles are washed several times with hot water, and then subjected to a classification operation to recover a plurality of kinds of polymer particles having different particle diameters.
準備於比較例2中利用分級操作回收之聚合物粒子中,粒徑為3.00μm之聚合物粒子。使用獲得之聚合物粒子作為基材粒子,以與實施例1相同之方式獲得導電性粒子。 The polymer particles having a particle diameter of 3.00 μm among the polymer particles recovered by the classification operation in Comparative Example 2 were prepared. Conductive particles were obtained in the same manner as in Example 1 using the obtained polymer particles as substrate particles.
於製作核時,將1,4-丁二醇二丙烯酸酯950重量份及乙二醇二甲基丙烯酸脂50重量份變更為二乙烯苯(純度96重量%)1000重量份,以及將過氧化苯甲醯之添加量變更為40重量份,除此以外,以與實施例1相同之方式獲得粒子。利用熱水將獲得之粒子洗淨數次後,進行分級操作,回收數種類之粒徑不同之聚合物粒子。 In the production of the core, 950 parts by weight of 1,4-butanediol diacrylate and 50 parts by weight of ethylene glycol dimethacrylate are changed to 1000 parts by weight of divinylbenzene (purity: 96% by weight), and peroxidation is carried out. The particles were obtained in the same manner as in Example 1 except that the amount of the benzamidine added was changed to 40 parts by weight. The obtained particles are washed several times with hot water, and then subjected to a classification operation to recover a plurality of kinds of polymer particles having different particle diameters.
準備於比較例3中利用分級操作回收之聚合物粒子中,粒徑為3.01μm之聚合物粒子。使用獲得之聚合物粒子作為基材粒子,以與實施例1相同之方式獲得導電性粒子。 The polymer particles having a particle diameter of 3.01 μm among the polymer particles recovered by the classification operation in Comparative Example 3 were prepared. Conductive particles were obtained in the same manner as in Example 1 using the obtained polymer particles as substrate particles.
於製作核時,將1,4-丁二醇二丙烯酸酯950重量份及乙二醇二甲基丙烯酸脂50重量份變更為二乙烯苯(純度96重量%)800重量份及丙烯腈200重量份,以及將過氧化苯甲醯之添加量變更為40重量份,除此以外,以與實施例1相同之方式獲得粒子。利用熱水將獲得之粒子洗淨數次後,進行分級操作,回收數種類之粒徑不同之聚合物粒子。 In the production of the core, 950 parts by weight of 1,4-butanediol diacrylate and 50 parts by weight of ethylene glycol dimethacrylate are changed to 800 parts by weight of divinylbenzene (purity: 96% by weight) and 200 parts by weight of acrylonitrile. The particles were obtained in the same manner as in Example 1 except that the amount of the benzamidine peroxide added was changed to 40 parts by weight. The obtained particles are washed several times with hot water, and then subjected to a classification operation to recover a plurality of kinds of polymer particles having different particle diameters.
準備於比較例4中利用分級操作回收之聚合物粒子中,粒徑為3.00μm之聚合物粒子。使用獲得之聚合物粒子作為基材粒子,以與實施例1相同之方式獲得導電性粒子。 In the polymer particles recovered by the classification operation in Comparative Example 4, polymer particles having a particle diameter of 3.00 μm were prepared. Conductive particles were obtained in the same manner as in Example 1 using the obtained polymer particles as substrate particles.
準備於實施例1中利用分級操作回收之聚合物粒子中,粒徑為3.01μm之聚合物粒子。使用獲得之聚合物粒子,且於製作核殼粒子時,將四乙氧基矽烷之添加量變更為10重量份,除此以外,以與實施例1相同之方式獲得核殼粒子及導電性粒子。 Among the polymer particles recovered by the classification operation in Example 1, polymer particles having a particle diameter of 3.01 μm were prepared. The core-shell particles and the conductive particles were obtained in the same manner as in Example 1 except that the obtained polymer particles were used, and the amount of the tetraethoxysilane was changed to 10 parts by weight in the production of the core-shell particles. .
(1)基材粒子之粒徑、核之粒徑及殼之厚度 (1) Particle size of the substrate particles, particle size of the core, and thickness of the shell
針對獲得之基材粒子,使用粒度分佈測定裝置(Beckman Coulter公司製造之「Multisizer3」),測定約10000個基材粒子之粒徑,而測 定平均粒徑及標準偏差等。針對製作基材粒子時所使用之核,亦藉由相同之方法測定粒徑。根據基材粒子之粒徑與核之粒徑之差而求出殼之厚度。 For the obtained substrate particles, a particle size distribution measuring device ("Multisizer 3" manufactured by Beckman Coulter Co., Ltd.) was used to measure the particle diameter of about 10,000 substrate particles. Determine the average particle size and standard deviation. The particle size was also measured by the same method for the core used in the production of the substrate particles. The thickness of the shell was determined from the difference between the particle diameter of the substrate particles and the particle diameter of the core.
(2)基材粒子之壓縮彈性模數(10%K值及30%K值)、以及10%荷重值及30%荷重值及40%荷重值 (2) Compressive elastic modulus (10% K value and 30% K value) of the substrate particles, and 10% load value and 30% load value and 40% load value
於23℃之條件下,藉由上述方法,使用微小壓縮試驗機(Fischer公司製造之「Fischerscope H-100」),對獲得之基材粒子之上述壓縮彈性模數(10%K值及30%K值)、以及10%荷重值及30%荷重值及40%荷重值進行測定。 The above-mentioned compression elastic modulus (10% K value and 30%) of the obtained substrate particles were obtained by the above method using a micro compression tester (Fischerscope H-100 manufactured by Fischer Co., Ltd.) at 23 ° C. The K value), and the 10% load value and the 30% load value and the 40% load value were measured.
(3)基材粒子之壓縮恢復率 (3) Compressive recovery rate of substrate particles
藉由上述之方法,使用微小壓縮試驗機(Fischer公司製造之「Fischerscope H-100」),對獲得之基材粒子之上述壓縮恢復率進行測定。 The compression recovery ratio of the obtained substrate particles was measured by the above method using a micro compression tester (Fischerscope H-100 manufactured by Fischer Co., Ltd.).
(4)基材粒子之破裂應變 (4) Fracture strain of the substrate particles
使用微小壓縮試驗機(Fischer公司製造之「Fischerscope H-100」),於23℃之條件下,藉由上述方法對破裂應變進行測定。 The rupture strain was measured by the above method using a micro compression tester (Fischerscope H-100 manufactured by Fischer Co., Ltd.) under the conditions of 23 °C.
(5)連接電阻 (5) Connection resistance
連接構造體之製作: Production of the connection structure:
將雙酚A型環氧樹脂(三菱化學公司製造之「Epikote1009」)10重量份、丙烯酸系橡膠(重量平均分子量約80萬)40重量份、甲基乙基酮200重量份、微膠囊型硬化劑(旭化成E-MATERIALS公司製造之「HX3941HP」)50重量份、及矽烷偶合劑(Dow Corning Toray silicone公司製造之「SH6040」)2重量份進行混合,並以含量成為3重量%之方式添加導電性粒子,使其分散而獲得樹脂組合物。 10 parts by weight of bisphenol A type epoxy resin ("Epikote 1009" manufactured by Mitsubishi Chemical Corporation), 40 parts by weight of acrylic rubber (weight average molecular weight: about 800,000), 200 parts by weight of methyl ethyl ketone, and microcapsule type hardening 50 parts by weight of the agent ("HX3941HP" manufactured by Asahi Kasei E-MATERIALS Co., Ltd.) and 2 parts by weight of a decane coupling agent ("SH6040" manufactured by Dow Corning Toray Silicon Co., Ltd.) were mixed, and conductive was added in such a manner that the content was 3% by weight. The particles are dispersed to obtain a resin composition.
將獲得之樹脂組合物塗佈於單面經脫模處理之厚度50μm之PET(聚對苯二甲酸乙二酯)膜,利用70℃之熱風進行5分鐘乾燥,而製 作各向異性導電膜。獲得之各向異性導電膜之厚度為12μm。 The obtained resin composition was applied to a PET (polyethylene terephthalate) film having a thickness of 50 μm which was subjected to release treatment on one side, and dried by hot air at 70 ° C for 5 minutes. An anisotropic conductive film is used. The thickness of the anisotropic conductive film obtained was 12 μm.
將獲得之各向異性導電膜切割成5mm×5mm之尺寸。將經切割之各向異性導電膜貼附於一面設置有具有電阻測定用之環繞線之ITO電極(高度0.1μm、L/S=20μm/20μm)之PET基板(寬度3cm、長度3cm)之ITO電極側的大致中央。繼而,將設置有相同金電極之2層軟性印刷基板(寬度2cm、長度1cm)以電極彼此重疊之方式進行位置對準後進行貼合。將該PET基板與2層軟性印刷基板之積層體於10N、180℃、及20秒鐘之壓接條件下進行熱壓接而獲得連接構造體。再者,使用於聚醯亞胺膜形成有銅電極,且於銅電極表面鍍有Au之2層軟性印刷基板。 The obtained anisotropic conductive film was cut into a size of 5 mm × 5 mm. The etched anisotropic conductive film was attached to an ITO (width: 3 cm, length: 3 cm) of an ITO electrode (having a height of 0.1 μm, L/S = 20 μm / 20 μm) provided with a surrounding wire for resistance measurement. The center of the electrode is approximately the center. Then, two flexible printed boards (width: 2 cm, length: 1 cm) provided with the same gold electrode were aligned so that the electrodes overlap each other, and then bonded. The laminate of the PET substrate and the two-layer flexible printed substrate was thermocompression bonded under pressure bonding conditions of 10 N, 180 ° C, and 20 seconds to obtain a bonded structure. Further, a two-layer flexible printed circuit board in which a copper electrode is formed on a polyimide film and Au is plated on the surface of the copper electrode is used.
連接電阻之測定: Determination of connection resistance:
藉由4端子法,對獲得之連接構造體之相對向之電極間的連接電阻進行測定。利用下述之基準判定連接電阻。 The connection resistance between the electrodes of the obtained connection structure was measured by a four-terminal method. The connection resistance was determined using the following criteria.
○○:連接電阻為3.0Ω以下 ○○: The connection resistance is 3.0 Ω or less
○:連接電阻超過3.0Ω且為4.0Ω以下 ○: The connection resistance exceeds 3.0 Ω and is 4.0 Ω or less.
△:連接電阻超過4.0Ω且為5.0Ω以下 △: The connection resistance exceeds 4.0 Ω and is 5.0 Ω or less.
×:連接電阻超過5.0Ω ×: The connection resistance exceeds 5.0Ω
(6)電極中之裂痕之有無 (6) Whether there is a crack in the electrode
觀察於上述(5)連接電阻之評價中獲得之連接構造體中,電極100個中是否產生裂痕 In the connection structure obtained in the evaluation of the above (5) connection resistance, it was observed whether or not cracks occurred in 100 of the electrodes.
○○:電極100個中,沒有產生裂痕之電極 ○○: Among the 100 electrodes, there is no crack-producing electrode
○:電極100個中,產生裂痕之電極個數為2個以下 ○: Among the 100 electrodes, the number of crack-producing electrodes is 2 or less.
△:電極100個中,產生裂痕之電極個數為3~5個 △: Among the 100 electrodes, the number of cracked electrodes is 3 to 5
×:電極100個中,產生裂痕之電極個數為6~10個 ×: Among the 100 electrodes, the number of cracked electrodes is 6 to 10
××:電極100個中,產生裂痕之電極個數為11個以上 ××: Among the 100 electrodes, the number of cracked electrodes is 11 or more.
(7)高溫高濕條件下之連接可靠性 (7) Connection reliability under high temperature and high humidity conditions
將於上述(5)連接電阻之評價中獲得之連接構造體100個放置於85℃、85%RH中100小時。對於試驗後之100個連接構造體中,上下電極間之導通不良是否產生進行評價。 100 pieces of the connection structure obtained in the evaluation of the above (5) connection resistance were placed in 85 ° C and 85% RH for 100 hours. In the 100 connected structures after the test, whether or not the conduction failure between the upper and lower electrodes occurred was evaluated.
○○:連接構造體100個中,導通不良產生之個數為1個以下 ○○: Among the 100 connected structures, the number of occurrences of conduction failure is one or less.
○:連接構造體100個中,導通不良產生之個數為2~5個 ○: Among the 100 connected structures, the number of conduction failures is 2 to 5
△:連接構造體100個中,導通不良產生之個數為6~10個 △: Among the 100 connected structures, the number of conduction failures is 6 to 10
×:連接構造體100個中,導通不良產生之個數為11個以上 ×: Among the 100 connected structures, the number of conduction failures is 11 or more.
將結果示於下述表1。再者,於實施例1~3、6、7中獲得之基材粒子之縱橫比均為1.2以下。再者,實施例2~4、6中之連接電阻之評價結果均為「○○」,但實施例4中之連接電阻之值低於實施例2~3、6中之連接電阻之值。可認為受到突起之影響。 The results are shown in Table 1 below. Further, the aspect ratios of the substrate particles obtained in Examples 1 to 3, 6, and 7 were all 1.2 or less. In addition, the evaluation results of the connection resistances in Examples 2 to 4 and 6 were all "○○", but the value of the connection resistance in Example 4 was lower than the values of the connection resistances in Examples 2 to 3 and 6. It can be considered to be affected by the protrusions.
Claims (11)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013011231 | 2013-01-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201430866A TW201430866A (en) | 2014-08-01 |
TWI620206B true TWI620206B (en) | 2018-04-01 |
Family
ID=51227267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102148525A TWI620206B (en) | 2013-01-24 | 2013-12-26 | Substrate particles, conductive particles, conductive materials, and connection structures |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5571271B1 (en) |
KR (1) | KR102172940B1 (en) |
CN (1) | CN104684970B (en) |
TW (1) | TWI620206B (en) |
WO (1) | WO2014115467A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014104017A1 (en) * | 2012-12-28 | 2014-07-03 | 積水化学工業株式会社 | Organic-inorganic hybrid particle, conductive particle, conductive material and connection structure |
JP6188392B2 (en) * | 2013-04-12 | 2017-08-30 | 積水化学工業株式会社 | Conductive particles, conductive materials, and connection structures |
WO2016080407A1 (en) * | 2014-11-17 | 2016-05-26 | 積水化学工業株式会社 | Conductive particle, conductive material, and connection structure |
JP6578600B2 (en) * | 2015-10-23 | 2019-09-25 | 国立大学法人 東京大学 | Core shell particles |
CN111508635B (en) * | 2016-02-08 | 2021-12-28 | 积水化学工业株式会社 | Conductive particle, conductive material, and connection structure |
JP2017147163A (en) * | 2016-02-19 | 2017-08-24 | 三菱マテリアル株式会社 | Conductive paste and conductive film formed using the same |
KR102546836B1 (en) * | 2020-12-17 | 2023-06-30 | 덕산네오룩스 주식회사 | High-strength Bid, Conductive Particles using the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004165123A (en) * | 2002-09-24 | 2004-06-10 | Sekisui Chem Co Ltd | Conductive particulate, its manufacturing method, and conductive material |
TW200537528A (en) * | 2004-01-30 | 2005-11-16 | Sekisui Chemical Co Ltd | Conductive particle and anisotropic conductive material |
TW200826120A (en) * | 2006-09-29 | 2008-06-16 | Nisshin Spinning | Conductive particles and method of preparing the same |
TW201207071A (en) * | 2010-07-02 | 2012-02-16 | Sekisui Chemical Co Ltd | Conductive particle with insulative particles attached thereto, anisotropic conductive material, and connecting structure |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05135618A (en) * | 1991-09-18 | 1993-06-01 | Sekisui Chem Co Ltd | Electroconductive resin particle |
JP3280139B2 (en) | 1993-11-19 | 2002-04-30 | 日立化成工業株式会社 | Display panel |
JP4163316B2 (en) | 1999-01-14 | 2008-10-08 | 株式会社日本触媒 | Organic-inorganic composite particles, method for producing the same, and use thereof |
JP2001011503A (en) * | 1999-06-25 | 2001-01-16 | Catalysts & Chem Ind Co Ltd | New conductive fine particle and its use |
JP2004179139A (en) * | 2002-09-30 | 2004-06-24 | Sumitomo Osaka Cement Co Ltd | Conductive particles and conductive adhesive material containing it and paint for forming transparent conductive film, and transparent conductive film as well as display device using it |
JP2006156068A (en) | 2004-11-29 | 2006-06-15 | Sanyo Chem Ind Ltd | Conductive particulate |
TWI356425B (en) * | 2005-03-24 | 2012-01-11 | Nippon Catalytic Chem Ind | Coated fine particle and their manufacturing metho |
KR100861010B1 (en) * | 2006-12-22 | 2008-09-30 | 제일모직주식회사 | Insulated Conductive Particles for Anisotropic Conduction and Anisotropic Conductive Film Using Same |
CN102112507B (en) * | 2008-07-31 | 2013-12-11 | 积水化学工业株式会社 | Polymer particle, conductive particle, anisotropic conductive material and connection structure |
JP5619675B2 (en) * | 2010-08-16 | 2014-11-05 | 株式会社日本触媒 | Conductive fine particles and anisotropic conductive materials |
JP5672022B2 (en) | 2011-01-25 | 2015-02-18 | 日立化成株式会社 | Insulating coated conductive particles, anisotropic conductive material, and connection structure |
JP5216165B1 (en) * | 2011-07-28 | 2013-06-19 | 積水化学工業株式会社 | Conductive particles, conductive materials, and connection structures |
JP5803393B2 (en) * | 2011-08-02 | 2015-11-04 | 日立化成株式会社 | Insulating coated conductive particles and anisotropic conductive adhesive film |
CN104380393B (en) * | 2012-07-05 | 2017-11-28 | 积水化学工业株式会社 | Electroconductive particle, resin particle, conductive material and connection structural bodies |
-
2013
- 2013-12-24 CN CN201380050699.6A patent/CN104684970B/en active Active
- 2013-12-24 KR KR1020157001456A patent/KR102172940B1/en active IP Right Grant
- 2013-12-24 WO PCT/JP2013/084487 patent/WO2014115467A1/en active Application Filing
- 2013-12-24 JP JP2014504116A patent/JP5571271B1/en active Active
- 2013-12-26 TW TW102148525A patent/TWI620206B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004165123A (en) * | 2002-09-24 | 2004-06-10 | Sekisui Chem Co Ltd | Conductive particulate, its manufacturing method, and conductive material |
TW200537528A (en) * | 2004-01-30 | 2005-11-16 | Sekisui Chemical Co Ltd | Conductive particle and anisotropic conductive material |
TW200826120A (en) * | 2006-09-29 | 2008-06-16 | Nisshin Spinning | Conductive particles and method of preparing the same |
TW201207071A (en) * | 2010-07-02 | 2012-02-16 | Sekisui Chemical Co Ltd | Conductive particle with insulative particles attached thereto, anisotropic conductive material, and connecting structure |
Also Published As
Publication number | Publication date |
---|---|
WO2014115467A1 (en) | 2014-07-31 |
JPWO2014115467A1 (en) | 2017-01-26 |
CN104684970A (en) | 2015-06-03 |
TW201430866A (en) | 2014-08-01 |
KR20150108346A (en) | 2015-09-25 |
CN104684970B (en) | 2018-01-30 |
JP5571271B1 (en) | 2014-08-13 |
KR102172940B1 (en) | 2020-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI598891B (en) | Substrate particles, conductive particles, conductive materials, and connection structures | |
TWI620206B (en) | Substrate particles, conductive particles, conductive materials, and connection structures | |
TWI612081B (en) | Organic-inorganic hybrid particles, conductive particles, conductive materials, and bonded structures | |
JP2022040212A (en) | Substrate particle, conductive particle, conductive material and connection structure | |
JP6613326B2 (en) | Base particle, conductive particle, conductive material, and connection structure | |
TWI574283B (en) | Organic and inorganic mixed particles, conductive particles, conductive materials and connecting structures | |
JP6641406B2 (en) | Base particles, conductive particles, conductive material and connection structure | |
JP6951398B2 (en) | Base particles, conductive particles, conductive materials and connecting structures | |
JP6737572B2 (en) | Base particle, conductive particle, conductive material, and connection structure | |
JP2014143188A (en) | Organic/inorganic hybrid particle, conductive particle, conductive material and connection structure | |
JP6130784B2 (en) | Organic-inorganic hybrid particles, conductive particles, conductive materials, and connection structures | |
JP6460673B2 (en) | Base particle, conductive particle, conductive material, and connection structure | |
JP6357413B2 (en) | Conductive material and connection structure | |
JP6212380B2 (en) | Organic-inorganic hybrid particles, conductive particles, conductive materials, and connection structures | |
JP6345536B2 (en) | Base particle, conductive particle, conductive material, and connection structure | |
JP6426913B2 (en) | Protruding particles, conductive particles, conductive materials and connection structures |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |